BZX384-G-Series
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Rev. 1.7, 16-Jul-2019 1Document Number: 83335
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Small Signal Zener Diodes
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Silicon planar Zener diodes
The Zener voltages are graded according to the
international E24 standard
Standard Zener voltage tolerance is ± 5 %;
replace “C” with “B” for ± 2 % tolerance
AEC-Q101 qualified available
ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
Base P/N-G3 - green, commercial grade
Base P/N-HG3 - green, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 2; 5 mA
VZ specification Pulse current
Circuit configuration Single
3
3
D
D
3
D
3D Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX384-G-series
BZX384C2V4-G3-08 to BZX384C75-G3-08
3000 (8 mm tape on 7" reel) 15 000/box
BZX384B2V4-G3-08 to BZX384B75-G3-08
BZX38C2V4-HG3-08 to BZX384C75-HG3-08
BZX38B2V4-HG3-08 to BZX384B75-HG3-08
BZX384C2V4-G3-18 to BZX384C75-G3-18
10 000 (8 mm tape on 13" reel) 10 000/box
BZX384B2V4-G3-18 to BZX384B75-G3-18
BZX38C2V4-HG3-18 to BZX384C75-HG3-18
BZX38B2V4-HG3-18 to BZX384B75-HG3-18
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL SOLDERING CONDITIONS
SOD-323 4 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation Device on fiberglass substrate Ptot 200 mW
Thermal resistance junction to ambient air Valid that electrodes are kept at ambient temperature RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Tstg -55 to +150 °C
BZX384-G-Series
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Rev. 1.7, 16-Jul-2019 2Document Number: 83335
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1 IZT1 IZT2 IR at VRZZ at IZT1 ZZK at IZT2 αVZ at IZT1
VmA μA VΩ10-4/°C
MIN. NOM. MAX. MAX. TYP. TYP. MIN. MAX.
BZX384C2V4-G Y1 2.2 2.4 2.6 5 1 50 1 70 ( 100) 275 -9 -4
BZX384C2V7-G Y2 2.5 2.7 2.9 5 1 20 1 75 ( 100) 300 (≤ 600) -9 -4
BZX384C3V0-G Y3 2.8 3.0 3.2 5 1 10 1 80 ( 95) 325 ( 600) -9 -3
BZX384C3V3-G Y4 3.1 3.3 3.5 5 1 5 1 85 ( 95) 350 ( 600) -8 -3
BZX384C3V6-G Y5 3.4 3.6 3.8 5 1 5 1 85 ( 90) 375 ( 600) -8 -3
BZX384C3V9-G Y6 3.7 3.9 4.1 5 1 3 1 85 ( 90) 400 ( 600) -7 -3
BZX384C4V3-G Y7 4 4.3 4.6 5 1 3 1 80 ( 90) 410 ( 600) -6 -1
BZX384C4V7-G Y8 4.4 4.7 5 5 1 3 2 50 ( 80) 425 ( 500) -5 2
BZX384C5V1-G Y9 4.8 5.1 5.4 5 1 2 2 40 ( 60) 400 ( 480) -3 4
BZX384C5V6-G YA 5.2 5.6 6 5 1 1 2 15 ( 40) 80 ( 400) -2 6
BZX384C6V2-G YB 5.8 6.2 6.6 5 1 3 4 6 ( 10) 40 ( 150) -1 7
BZX384C6V8-G YC 6.4 6.8 7.2 5 1 2 4 6 ( 15) 30 ( 80) 2 7
BZX384C7V5-G YD 7 7.5 7.9 5 1 1 5 6 ( 15) 30 ( 80) 3 7
BZX384C8V2-G YE 7.7 8.2 8.7 5 1 0.7 5 6 ( 15) 40 ( 80) 4 7
BZX384C9V1-G YF 8.5 9.1 9.6 5 1 0.5 6 6 ( 15) 40 ( 100) 5 8
BZX384C10-G YG 9.4 10 10.6 5 1 0.2 7 8 ( 20) 50 ( 150) 5 8
BZX384C11-G YH 10.4 11 11.6 5 1 0.1 8 10 ( 20) 50 ( 150) 5 9
BZX384C12-G YI 11.4 12 12.7 5 1 0.1 8 10 ( 25) 50 ( 150) 6 9
BZX384C13-G YK 12.4 13 14.1 5 1 0.1 8 10 ( 30) 50 ( 170) 7 9
BZX384C15-G YL 13.8 15 15.6 5 1 0.05 0.7 VZnom. 10 ( 30) 50 ( 200) 7 9
BZX384C16-G YM 15.3 16 17.1 5 1 0.05 0.7 VZnom. 10 ( 40) 50 ( 200) 8 9.5
BZX384C18-G YN 16.8 18 19.1 5 1 0.05 0.7 VZnom. 10 ( 45) 50 ( 225) 8 9.5
BZX384C20-G YO 18.8 20 21.2 5 1 0.05 0.7 VZnom. 15 ( 55) 60 ( 225) 8 10
BZX384C22-G YP 20.8 22 23.3 5 1 0.05 0.7 VZnom. 20 ( 55) 60 ( 250) 8 10
BZX384C24-G YR 22.8 24 25.6 5 1 0.05 0.7 VZnom. 25 ( 70) 60 ( 250) 8 10
BZX384C27-G YS 25.1 27 28.9 2 0.5 0.05 0.7 VZnom. 25 ( 80) 65 ( 300) 8 10
BZX384C30-G YT 28 30 32 2 0.5 0.05 0.7 VZnom. 30 ( 80) 70 ( 300) 8 10
BZX384C33-G YU 31 33 35 2 0.5 0.05 0.7 VZnom. 35 ( 80) 75 ( 325) 8 10
BZX384C36-G YW 34 36 38 2 0.5 0.05 0.7 VZnom. 35 ( 90) 80 ( 350) 10 12
BZX384C39-G YX 37 39 41 2 0.5 0.05 0.7 VZnom. 40 ( 130) 80 ( 350) 10 12
BZX384C43-G YY 40 43 46 2 0.5 0.05 0.7 VZnom. 45 ( 150) 85 ( 375) 10 12
BZX384C47-G YZ 44 47 50 2 0.5 0.05 0.7 VZnom. 50 ( 170) 85 ( 375) 10 12
BZX384C51-G Z1 48 51 54 2 0.5 0.05 0.7 VZnom. 60 ( 180) 85 ( 400) 8 10
BZX384C56-G Z2 52 56 60 2 0.5 0.05 0.7 VZnom. 70 ( 200) 100 ( 425) 10 12
BZX384C62-G Z3 58 62 66 2 0.5 0.05 0.7 VZnom. 80 ( 215) 100 ( 450) 10 12
BZX384C68-G Z4 64 68 72 2 0.5 0.05 0.7 VZnom. 90 ( 240) 150 ( 475) 10 12
BZX384C75-G Z5 70 75 79 2 0.5 0.05 0.7 VZnom. 95 ( 255) 170 ( 500) 10 12
BZX384-G-Series
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Rev. 1.7, 16-Jul-2019 3Document Number: 83335
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1 IZT1 IZT2 IR at VRZZ at IZT1 ZZK at IZT2 αVZ at IZT1
VmA μA VΩ10-4/°C
MIN. NOM. MAX. MAX. TYP. TYP. MIN. MAX.
BZX384B2V4-G C1 2.35 2.4 2.45 5 1 50 1 70 ( 100) 275 -9 -4
BZX384B2V7-G C2 2.65 2.7 2.75 5 1 20 1 75 ( 100) 300 (≤ 600) -9 -4
BZX384B3V0-G C3 2.94 3.0 3.06 5 1 10 1 80 ( 95) 325 ( 600) -9 -3
BZX384B3V3-G C4 3.23 3.3 3.37 5 1 5 1 85 ( 95) 350 ( 600) -8 -3
BZX384B3V6-G C5 3.53 3.6 3.67 5 1 5 1 85 ( 90) 375 ( 600) -8 -3
BZX384B3V9-G C6 3.82 3.9 3.98 5 1 3 1 85 ( 90) 400 ( 600) -7 -3
BZX384B4V3-G C7 4.21 4.3 4.39 5 1 3 1 80 ( 90) 410 ( 600) -6 -1
BZX384B4V7-G C8 4.61 4.7 4.79 5 1 3 2 50 ( 80) 425 ( 500) -5 2
BZX384B5V1-G C9 5 5.1 5.2 5 1 2 2 40 ( 60) 400 ( 480) -3 4
BZX384B5V6-G CA 5.49 5.6 5.71 5 1 1 2 15 ( 40) 80 ( 400) -2 6
BZX384B6V2-G CB 6.08 6.2 6.32 5 1 3 4 6 ( 10) 40 ( 150) -1 7
BZX384B6V8-G CC 6.66 6.8 6.94 5 1 2 4 6 ( 15) 30 ( 80) 2 7
BZX384B7V5-G CD 7.35 7.5 7.65 5 1 1 5 6 ( 15) 30 ( 80) 3 7
BZX384B8V2-G CE 8.04 8.2 8.36 5 1 0.7 5 6 ( 15) 40 ( 80) 4 7
BZX384B9V1-G CF 8.92 9.1 9.28 5 1 0.5 6 6 ( 15) 40 ( 100) 5 8
BZX384B10-G CG 9.8 10 10.2 5 1 0.2 7 8 ( 20) 50 ( 150) 5 8
BZX384B11-G CH 10.8 11 11.2 5 1 0.1 8 10 ( 20) 50 ( 150) 5 9
BZX384B12-G CI 11.8 12 12.2 5 1 0.1 8 10 ( 25) 50 ( 150) 6 9
BZX384B13-G CK 12.7 13 13.3 5 1 0.1 8 10 ( 30) 50 ( 170) 7 9
BZX384B15-G CL 14.7 15 15.3 5 1 0.05 0.7 VZnom. 10 ( 30) 50 ( 200) 7 9
BZX384B16-G CM 15.7 16 16.3 5 1 0.05 0.7 VZnom. 10 ( 40) 50 ( 200) 8 9.5
BZX384B18-G CN 17.6 18 18.4 5 1 0.05 0.7 VZnom. 10 ( 45) 50 ( 225) 8 9.5
BZX384B20-G CO 19.6 20 20.4 5 1 0.05 0.7 VZnom. 15 ( 55) 60 ( 225) 8 10
BZX384B22-G CP 21.6 22 22.4 5 1 0.05 0.7 VZnom. 20 ( 55) 60 ( 250) 8 10
BZX384B24-G CR 23.5 24 24.5 5 1 0.05 0.7 VZnom. 25 ( 70) 60 ( 250) 8 10
BZX384B27-G CS 26.5 27 27.5 2 0.5 0.05 0.7 VZnom. 25 ( 80) 65 ( 300) 8 10
BZX384B30-G CT 29.4 30 30.6 2 0.5 0.05 0.7 VZnom. 30 ( 80) 70 ( 300) 8 10
BZX384B33-G CU 32.3 33 33.7 2 0.5 0.05 0.7 VZnom. 35 ( 80) 75 ( 325) 8 10
BZX384B36-G CW 35.3 36 36.7 2 0.5 0.05 0.7 VZnom. 35 ( 90) 80 ( 350) 8 10
BZX384B39-G CX 38.2 39 39.8 2 0.5 0.05 0.7 VZnom. 40 ( 130) 80 ( 350) 10 12
BZX384B43-G CY 42.1 43 43.9 2 0.5 0.05 0.7 VZnom. 45 ( 150) 85 ( 375) 10 12
BZX384B47-G CZ 46.1 47 47.9 2 0.5 0.05 0.7 VZnom. 50 ( 170) 85 ( 375) 10 12
BZX384B51-G D1 50 51 52 2 0.5 0.05 0.7 VZnom. 60 ( 180) 85 ( 400) 10 12
BZX384B56-G D2 54.9 56 57.1 2 0.5 0.05 0.7 VZnom. 70 ( 200) 100 ( 425) 9 11
BZX384B62-G D3 60.8 62 63.2 2 0.5 0.05 0.7 VZnom. 80 ( 215) 100 ( 450) 9 12
BZX384B68-G D4 66.6 68 69.4 2 0.5 0.05 0.7 VZnom. 90 ( 240) 150 ( 475) 10 12
BZX384B75-G D5 73.5 75 76.5 2 0.5 0.05 0.7 VZnom. 95 ( 255) 170 ( 500) 10 12
BZX384-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 16-Jul-2019 4Document Number: 83335
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 5 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
18114
mA
10
3
10
2
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
IF
VF
0 0.2 0.4 0.6 0.8 1V
T
J
= 100 °C
T
J
= 25 °C
18192
250
200
150
100
50
0
mW
Ptot
0 100 200 °C
Tamb
18117
1000
5
4
3
2
5
4
3
2
100
1
rzj
0.1 25 25110
IZ
TJ = 25 °C
2.7
5
4
3
2
10
25100 mA
3.6
4.7
5.1
5.6
Ω
18119
100
5
4
3
2
5
4
3
2
10
rzj
0.1
25 25
110
I
Z
1
25
100 mA
Ω
T
J
= 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
18120
103
7
5
4
3
2
7
5
4
3
2
10
Ω
0.1 2345 2345
110
mA
R
zj
IZ
Tj = 25 °C
47 + 51
43
39
36
102
18121
10
3
5
4
3
2
5
4
3
2
10
2
1
Rzth
5
4
3
2
10
Ω
1
2345 2345
10 100 V
VZ at IZ = 5 mA
negativepositive
Δ
Δ
VZ
Tj
R
zth
= R
thA
x V
Z
x
BZX384-G-Series
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Rev. 1.7, 16-Jul-2019 5Document Number: 83335
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Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 10 - Change of Zener Voltage vs. Junction Temperature
Fig. 11 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
18135
Δ
25
20
15
10
5
0
- 5
mV/°C
Δ
VZ
Tj
12345 2345
10 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
5 mA
1 mA
20 mA
IZ =
18124
V
Z
at I
Z
= 5 mA
25 15
10
8
7
6.2
5.9
5.6
5.1
4.7
3.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 1
- 0.2
VZ
V
Tj
020406080
100 120 140 C
Δ
18194
Δ
9
7
5
3
1
- 1
V
VZ
8
6
4
2
0
0100
60
Tj
20 40 120
80 140 °C
I
Z
= 2 mA
51
43
36
V
Z
at I
Z
= 2 mA
18195
Δ
100
80
60
40
20
0
mV/°C
Δ
VZ
Tj
020 40 80
60 100 V
VZ at IZ = 2 mA
IZ = 5 mA
18196
Δ
1.6
1.2
0.8
0.4
0
- 0.4
V
VZ
1.4
1
0.6
0.2
- 0.2
1
2345 2345
10 100 V
VZ at IZ = 5 mA
I
Z
= 5 mA
V
Z
27 V; I
Z
= 2 mA
V
Z
= r
zth
x I
Z
Δ
BZX384-G-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 16-Jul-2019 6Document Number: 83335
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
Fig. 14 - Breakdown Characteristics
Fig. 15 - Breakdown Characteristics
Fig. 16 - Breakdown Characteristics
18160
Δ
5
4
3
2
1
0
V
V
Z
020 40 60 80 100 V
V
Z
at I
Z
= 5 mA
IZ = 5 mA
IZ = 2.5 mA
VZ = rzth x IZ
Δ
18111
Test
current
I
Z
5 mA
123456789
0 10 V
V
Z
3.3
3.9 5.6
2.7
mA
50
40
30
20
10
0
lZ
T
j
= 25 °C
8.2
6.8
4.7
18112
10 20 30
0 40 V
V
Z
mA
30
20
10
0
l
Z
33
Test
current
I
Z
5 mA
T
j
= 25 °C
10
12
15
18
22
27
36
18191
mA
10
8
6
4
2
0
lz
10 20 30 40 50 60 70 80 90
0 100 V
VZ
2 mA
Test Current IZ
Tj = 25 °C
43
51
47
39
BZX384-G-Series
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Rev. 1.7, 16-Jul-2019 7Document Number: 83335
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PACKAGE DIMENSIONS in millimeters (inches): SOD-323
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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