K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 1 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
Document Title
128Kx36 & 128Kx32 & 256Kx18-Bit Flow Through NtRAMTM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
Remark
Preliminary
Preliminary
Preliminary
History
1. Initial document.
1. Changed DC parameters
Icc ; from 300mA to 250mA at -65,
from 280mA to 230mA at -75,
from 260mA to 210mA at -80,
from 240mA to 190mA at -90,
ISB ; from 140mA to 130mA at -65,
from 130mA to 120mA at -75,
from 120mA to 110mA at -80,
from 110mA to 100mA at -90,
ISB1 ; from 100mA to 80mA
1. Add x32 org. and industrial temperature
Draft Date
May. 15. 2001
June. 12. 2001
Aug. 11. 2001
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 2 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
4Mb NtRAM(Flow Through / Pipelined) Ordering Information
Org. Part Number Mode VDD Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz) PKG Temp
256Kx18
K7M401825B-QC(I)65/75/80 FlowThrough 3.3 6.5/7.5/8.0 ns
Q :100TQFP
C
(Commercial
Temperature
Range)
I:
(Industrial
Temperature
Range)
K7N401801B-QC(I)16/13 Pipelined 3.3 167/133 MHz
K7N401809B-QC(I)25/22/20 Pipelined 3.3 250/225/200 MHz
128Kx32 K7M403225B-QC(I)65/75/80 FlowThrough 3.3 6.5/7.5/8.0 ns
K7N403201B-QC(I)16/13 Pipelined 3.3 167/133 MHz
K7N403209B-QC(I)25/22/20 Pipelined 3.3 250/225/200 MHz
128Kx36 K7M403625B-QC(I)65/75/80 FlowThrough 3.3 6.5/7.5/8.0 ns
K7N403601B-QC(I)16/13 Pipelined 3.3 167/133 MHz
K7N403609B-QC(I)25/22/20 Pipelined 3.3 250/225/200 MHz
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 3 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
128Kx36 & 128Kx32 & 256Kx18-Bit Flow-Through NtRAMTM
The K7M403625B, K7M403225B and K7M401825B are
4,718,592-bit Synchronous Static SRAMs.
The NtRAMTM , or No Turnaround Random Access Memory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incomming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M403625B, K7M403225B and K7M401825B are imple-
mented with SAMSUNG′s high performance CMOS technology
and is available in 100pin TQFP packages. Multiple power and
ground pins minimize ground bounce.
GENERAL DESCRIPTIONFEATURES
LOGIC BLOCK DIAGRAM
• VDD=3.3V+0.165V/-0.165V Power Supply.
• VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A Package.
• Operating in commeical and industrial temperature range.
FAST ACCESS TIMES
PARAMETER Symbol -65 -75 -80 Unit
Cycle Time tCYC 7.5 8.5 10 ns
Clock Access Time tCD 6.5 7.5 8.0 ns
Output Enable Access Time tOE 3.5 3.5 4.0 ns
WE
BWx
CLK
CKE
CS1
CS2
CS2
ADV
OE
ZZ
DQa0 ~ DQd7 or DQa0 ~ DQb8
ADDRESS 128Kx36/32 , 256Kx18
MEMORY
ARRAY
CONTROL
LOGIC
A
′
0~A
′
1
36 /32or 18
DQPa ~ DQPd
BUFFER
DATA-IN
REGISTER
K
REGISTER
BURST
ADDRESS
COUNTER
ADDRESS
REGISTER
WRITE
CONTROL
LOGIC
CONTROL
REGISTER
K
A [0:16]or
A [0:17]
LBO
A
2
~A
16
or
A
2
~A
17
A
0
~A
1
(x=a,b,c,d or a,b)
NtRAMTM and No Turnaround Random Access Memory are trademarks of Samsung,
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 4 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
PIN CONFIGURATION(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
DQPc/NC
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
Vss
VDD
VDD
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd/NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb7
DQb6
VDDQ
VSSQ
DQb5
DQb4
DQb3
DQb2
VSSQ
VDDQ
DQb1
DQb0
VSS
VDD
ZZ
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa/NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A6
A7
CS1
CS2
BWd
BWc
BWb
BWa
CS2
VDD
VSS
CLK
WE
CK E
OE
ADV
N.C.
N.C.
A8
81 A9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A16
A15
A14
A13
A12
A11
A10
N.C.
N.C.
VDD
VSS
N.C.
N.C.
A0
A1
A2
A3
A4
A5
31LBO
PIN NAME
Notes : 1. The pin 83 is reserved for address bit for the 8Mb NtRAM.
2. A 0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
3. DQPa~Pd pins are NC for K7N403225B
SYMBOL PIN NAME TQFP PIN NO. SYMBOL PIN NAME TQFP PIN NO.
A0 - A16
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx(x=a,b,c,d)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37
44,45,46,47,48,49
50,81,82,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
VDD
VSS
N.C.
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
/NC
VDDQ
VSSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
15,16,41,65,91
14,17,40,66,67,90
38,39,42,43,83,84
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
K7M403625B(128Kx36)
VSS
/K7M403225B(128Kx32)
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 5 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
PIN CONFIGURATION(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
N.C.
N.C.
N.C.
VDDQ
VSSQ
N.C.
N.C.
DQb8
DQb7
VSSQ
VDDQ
DQb6
DQb5
VSS
VDD
VDD
VSS
DQb4
DQb3
VDDQ
VSSQ
DQb2
DQb1
DQb0
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A10
N.C.
N.C.
VDDQ
VSSQ
N.C.
DQa0
DQa1
DQa2
VSSQ
VDDQ
DQa3
DQa4
VSS
VSS
VDD
ZZ
DQa5
DQa6
VDDQ
VSSQ
DQa7
DQa8
N.C.
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A6
A7
CS1
CS2
BWb
BWa
CS2
VDD
VSS
CLK
WE
CK E
OE
ADV
N.C.
N.C.
A8
81 A9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A17
A16
A15
A14
A13
A12
A11
N.C.
N.C.
VDD
VSS
N.C.
N.C.
A0
A1
A2
A3
A4
A5
31LBO
K7M401825B(256Kx18)
N.C.
N.C.
PIN NAME
Notes : 1. The pin 83 is reserved for address bit for the 8Mb NtRAM.
2. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL PIN NAME TQFP PIN NO. SYMBOL PIN NAME TQFP PIN NO.
A0 - A 17
ADV
WE
CLK
CKE
CS1
CS2
CS2
BW x(x=a,b)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,99,100
85
88
89
87
98
97
92
93,94
86
64
31
VDD
VSS
N.C.
DQa0~a8
DQb0~b8
VDDQ
VSSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
15,16,41,65,91
14,17,40,66,67,90
1,2,3,6,7,25,28,29,30,38,39,
42,43,51,52,53,56,57,75,78,
79,83,84,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 6 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
FUNCTION DESCRIPTION
The K7M4036/3225B and K7M401825B are NtRAM TM designed to sustain 100% bus bandwidth by eliminating turnaround cycle
when there is transition from Read to Write, or vice versa.
All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAMTM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables(CS1, CS2, CS2)
are active .
Output Enable(OE) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables(CS1, CS2, CS2) are active, the write enable input signals WE are driven
high, and ADV driven low. Data appears at the outputs within the same clock cycle as the address for the data. Also during read oper-
ation OE must be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. BW [d:a] can be used for byte write operation. The Flow
Through NtRAM TM uses a late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required one cycle
later.
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up
time.
BURST SEQUENCE TABLE (Interleaved Burst, LBO=High)
Notes : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
LBO PIN HIGH Case 1 Case 2 Case 3 Case 4
A1A0A1A0A1A0A1A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
1
0
1
0
BQ TABLE (Linear Burst, LBO =Low)
Notes : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
LBO PIN LOW Case 1 Case 2 Case 3 Case 4
A1A0A1A0A1A0A1A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 7 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
STATE DIAGRAM FOR N tRAMTM
BEGIN
WRITE
BURST
WRITE
BEGIN
READ
WRITE
DS
READ
BURST
READ
DS
WRITE
DS
READ
DS
READ
DS
WRITE
BURST
DESELECT
BURST
READ
BURST
WRITE
READ WRITE
BURST BURST
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
COMMAND ACTION
DS DESELECT
READ BEGIN READ
WRITE BEGIN WRITE
BURST BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 8 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
SYNCHRONOUS TRUTH TABLE
Notes : 1. X means "Don′t Care". 2. The rising edge of clock is symbolized by ( ↑).
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS1CS2CS2ADV WE BWxOE CKE CLK ADDRESS ACCESSED OPERATION
HX X LX X X L↑N/A Not Selected
XLXLX X X L↑N/A Not Selected
X X HLX X X L↑N/A Not Selected
XXXHX X X L↑N/A Not Selected Continue
LHL L HXLL↑External Address Begin Burst Read Cycle
XXXHX X LL↑Next Address Continue Burst Read Cycle
LHL L HXHL↑External Address NOP/Dummy Read
XXXHX X HL↑Next Address Dummy Read
LHLLLLXL↑External Address Begin Burst Write Cycle
XXXHXLXL↑Next Address Continue Burst Write Cycle
LHL L L HXL↑N/A NOP/Write Abort
XXXHXHXL↑Next Address Write Abort
XXXXXXX H↑Current Address Ignore Clock
WRITE TRUTH TABLE(x36/32)
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WE BWaBWbBW cBW dOPERATION
HXXXX READ
LLHHH WRITE BYTE a
LHLH H WRITE BYTE b
LHHLHWRITE BYTE c
LHHHLWRITE BYTE d
LLLLL WRITE ALL BYTEs
LH H H H WRITE ABORT/NOP
TRUTH TABLES
WRITE TRUTH TABLE(x18)
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WE BWaBWbOPERATION
HX X READ
LLHWRITE BYTE a
LHLWRITE BYTE b
L L L WRITE ALL BYTEs
LH H WRITE ABORT/NOP
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 9 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
ASYNCHRONOUS TRUTH TABLE
OPERATION ZZ OE I/O STATUS
Sleep Mode HXHigh-Z
Read L L DQ
LHHigh-Z
Write LXDin, High-Z
Deselected LXHigh-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
CAPACITANCE*(TA=25°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT
Input Capacitance CIN VIN=0V -5pF
Output Capacitance COUT VOUT=0V -7pF
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER SYMBOL MIN Typ. MAX UNIT
Supply Voltage VDD 3.135 3.3 3.465 V
VDDQ 3.135 3.3 3.465 V
Ground VSS 000V
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER SYMBOL MIN Typ. MAX UNIT
Supply Voltage VDD 3.135 3.3 3.465 V
VDDQ 2.375 2.5 2.9 V
Ground VSS 000V
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER SYMBOL RATING UNIT
Voltage on V DD Supply Relative to VSS
Voltage on V DDQ Supply Relative to VSS
VDD -0.3 to 4.6 V
VDDQ VDD V
Voltage on Input Pin Relative to VSS VIN -0.3 to V DD+0.3 V
Voltage on I/O Pin Relative to VSS VIO -0.3 to V DDQ+0.3 V
Power Dissipation PD1.4 W
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TOPR 0 to 70 °C
Industrial TOPR -40 to 85 °C
Storage Temperature Range Under Bias TBIAS -10 to 85 °C
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through N tRAMTM
- 10 -
Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
VSS
VIH
VSS-1.0V
20% tCYC(MIN)
DC ELECTRICAL CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT NOTES
Input Leakage Current(except ZZ) IIL VDD=Max ; VIN=VSS to V DD -2 +2 µA
Output Leakage Current IOL Output Disabled, -2 +2 µA
Operating Current ICC
VDD=Max
IOUT=0mA
Cycle Time ≥ tCYC Min
-65 -250
mA 1,2-75 -230
-80 -210
Standby Current
ISB
Device deselected, IOUT=0mA,
ZZ≤VIL, f=Max,
All Inputs ≤0.2V or ≥ VDD -0.2V
-65 -130
mA-75 -120
-80 -110
ISB1 Device deselected, I OUT=0mA, ZZ≤0.2V, f=0,
All Inputs=fixed (VDD-0.2V or 0.2V) -80 mA
ISB2 Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs ≤VIL or ≥VIH -50 mA
Output Low Voltage(3.3V I/O) VOL IOL=8.0mA -0.4 V
Output High Voltage(3.3V I/O) VOH IOH=-4.0mA 2.4 -V
Output Low Voltage(2.5V I/O) VOL IOL=1.0mA -0.4 V
Output High Voltage(2.5V I/O) VOH IOH=-1.0mA 2.0 -V
Input Low Voltage(3.3V I/O) V IL -0.3* 0.8 V
Input High Voltage(3.3V I/O) VIH 2.0 VDD+0.3** V3
Input Low Voltage(2.5V I/O) VIL -0.3* 0.7 V
Input High Voltage(2.5V I/O) VIH 1.7 VDD+0.3** V3
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165V/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
TEST CONDITIONS
PARAMETER VALUE
Input Pulse Level(for 3.3V I/O) 0 to 3.0V
Input Pulse Level(for 2.5V I/O) 0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O) 1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O) 1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O 1.5V
Input and Output Timing Reference Levels for 2.5V I/O VDDQ /2
Output Load See Fig. 1
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 11 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
AC TIMING CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
Notes : 1. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
3. A write cycle is defined by WE low having been registerd into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
4. To avoid bus contention, At a given vlotage and temperature tLZC is more than tHZC.
The soecs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions
(0°C,3.465V) than tHZC, which is a Max. parameter(worst case at 70°C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperatue.
PARAMETER Symbol -65 -75 -80 UNIT
Min Max Min Max Min Max
Cycle Time tCYC 7.5 -8.5 -10 -ns
Clock Access Time tCD -6.5 -7.5 -8.0 ns
Output Enable to Data Valid tOE -3.5 -3.5 -4.0 ns
Clock High to Output Low-Z tLZC 2.5 -2.5 -2.5 -ns
Output Hold from Clock High tOH 2.5 -2.5 -2.5 -ns
Output Enable Low to Output Low-Z tLZOE 0-0-0-ns
Output Enable High to Output High-Z tHZOE -3.5 -3.5 -4.0 ns
Clock High to Output High-Z tHZC -3.5 -3.5 -3.5 ns
Clock High Pulse Width tCH 2.5 -3.0 -3.0 -ns
Clock Low Pulse Width tCL 2.5 -3.0 -3.0 -ns
Address Setup to Clock High tAS 1.5 -2.0 -2.0 -ns
CKE Setup to Clock High tCES 1.5 -2.0 -2.0 -ns
Data Setup to Clock High tDS 1.5 -2.0 -2.0 -ns
Write Setup to Clock High (WE, BWX)tWS 1.5 -2.0 -2.0 -ns
Address Advance Setup to Clock High tADVS 1.5 -2.0 -2.0 -ns
Chip Select Setup to Clock High tCSS 1.5 -2.0 -2.0 -ns
Address Hold from Clock High tAH 0.5 -0.5 -0.5 -ns
CKE Hold from Clock High tCEH 0.5 -0.5 -0.5 -ns
Data Hold from Clock High tDH 0.5 -0.5 -0.5 -ns
Write Hold from Clock High (WE, BWEX)tWH 0.5 -0.5 -0.5 -ns
Address Advance Hold from Clock High tADVH 0.5 -0.5 -0.5 -ns
Chip Select Hold from Clock High tCSH 0.5 -0.5 -0.5 -ns
ZZ High to Power Down tPDS 2-2-2-cycle
ZZ Low to Power Up tPUS 2-2-2-cycle
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
Dout
353Ω / 1538Ω5pF*
+3.3V for 3.3V I/O
319Ω / 1667Ω
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50Ω
RL=50ΩVL=1.5V for 3.3V I/O
VDDQ /2 for 2.5V I/O
/+2.5V for 2.5V I/O
30pF*
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 12 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pend-
ing operations are completed. similarly, when exiting SLEEP MODE during tPUS, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS
Current during SLEEP MODE ZZ ≥ VIH ISB2 10 mA
ZZ active to input ignored tPDS 2cycle
ZZ inactive to input sampled tPUS 2cycle
ZZ active to SLEEP current tZZI 2cycle
ZZ inactive to exit SLEEP current tRZZI 0
K
tPDS
ZZ setup cycle
tRZZI
ZZ
Isupply
All inputs
(except ZZ)
Outputs
(Q)
tZZI
tPUS
ZZ recovery cycle
Deselect or Read Only
High-Z
DON′T CARE
ISB2
SLEEP MODE WAVEFORM
Normal
operation
cycle
Deselect or Read Only
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 13 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
Clock
CKE
Address
WRITE
CS
ADV
OE
Data Out
TIMING WAVEFORM OF READ CYCLE
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tCH tCL
tCES tCEH
tAS tAH
A1A2A3
tWStWH
tCSS tCSH
tOEtHZOE
tLZOE
tCD
tOHtHZC
Q3-4Q3-3Q3-2Q3-1Q2-4Q2-3Q2-2Q2-1Q1-1
Don′t Care
Undefined
tCYC
tADVS tADVH
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 14 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
TIMING WAVEFORM OF WRTE CYCLE
Clock
Address
WRITE
CS
ADV
Data In
tCH tCL
A2A3
D2-1D1-1D2-2D2-3D2-4D3-1D3-2D3-3
OE
Data Out
tDStDH
tHZOE
Don′t Care
Undefined
tCYC
CKE
A1
tCES tCEH
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q0-4
D3-4
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 15 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
TIMING WAVEFORM OF SINGLE READ/WRITE
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
tDStDH
Data Out
A2A4A5
D2
tOE
tLZOE
Q1
Don′t Care
Undefined
tCYC
CKE
tCES tCEH
A1A3A7A6
Q3Q4Q6
D5
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q7
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 16 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
TIMING WAVEFORM OF CKE OPERATION
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
Data Out
A1A2A3A4A5
tCES tCEH
Don′t Care
Undefined
tCYC
CKE
tDStDH
D2
Q3Q4Q1
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tCD
tLZCtHZC
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 17 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
TIMING WAVEFORM OF CS OPERATION
Clock
Address
WRITE
CS
ADV
OE
Data In
tCH tCL
Data Out
A1A2A3A4A5
Don′t Care
Undefined
tCYC
CKE
D5
Q4
tCES tCEH
Q1Q2
tOE
tLZOE
D3
tCD
tLZC
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tHZC
tDHtDS
K7M403625B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM
- 18 - Rev 0.2
Aug 2001
K7M401825B Preliminary
K7M403225B
PACKAGE DIMENSIONS
0.10 MAX
0~8°22.00 ±0.30
20.00 ±0.20
16.00 ±0.30
14.00 ±0.20
1.40 ±0.10 1.60 MAX
0.05 MIN
(0.58)
0.50 ±0.10
#1
(0.83) 0.50 ±0.10
100-TQFP-1420A
0.65 0.30 ±0.10
0.10 MAX
+ 0.10
- 0.05
0.127
Units ; millimeters/Inches
