2SK2939(L),2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Mar. 2001 Features * Low on-resistance R DS =0.020 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 D 4 1 G 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 35 A 140 A 35 A 35 A 105 mJ 50 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK2939(L),2SK2939(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 0.020 0.026 I D = 15A, VGS = 10VNote4 resistance RDS(on) -- 0.032 0.050 I D = 15A, VGS = 4V Note4 Forward transfer admittance |yfs| 14 23 -- S I D = 15A, VDS = 10V Note4 Input capacitance Ciss -- 1100 -- pF VDS = 10V Output capacitance Coss -- 540 -- pF VGS = 0 Reverse transfer capacitance Crss -- 200 -- pF f = 1MHz Turn-on delay time t d(on) -- 15 -- ns I D = 15A, VGS = 10V Rise time tr -- 180 -- ns RL = 2 Turn-off delay time t d(off) -- 175 -- ns Fall time tf -- 195 -- ns Body-drain diode forward voltage VDF -- 0.95 -- V I F = 35A, VGS = 0 Body-drain diode reverse recovery time t rr -- 40 -- ns I F = 35A, VGS = 0 diF/ dt =50A/s Note: 4. Pulse test 3 2SK2939(L),2SK2939(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 200 80 10 ho t) Operation in this area is limited by R DS(on) ) I D (A) 1s C 25 Drain Current Pch (W) s( (T Channel Dissipation s n tio ra pe 1 m m O 5 2 10 s 20 1 = c= 10 PW C 20 50 D 40 s 0 60 10 100 0.5 Ta = 25 C 0 50 100 150 0.2 0.1 200 4.5 V 30 100 (V) DS V DS = 10 V Pulse Test Pulse Test I D (A) 10 V 6V 5V 4V Drain Current I D (A) Drain Current 4 10 50 30 3.5 V 20 0 3 Typical Transfer Characteristics Typical Output Characteristics 50 10 1 Drain to Source Voltage V Case Temperature Tc (C) 40 0.3 VGS = 3 V 2 4 6 Drain to Source Voltage V 8 DS(V) 10 40 30 Tc = 75C 25C 20 -25C 10 0 1 2 3 Gate to Source Voltage V 4 (V) GS 5 2SK2939(L),2SK2939(S) Pulse Test 0.8 0.6 I D = 20A 0.4 Static Drain to Source on State Resistance vs. Drain Current 0.5 Drain to Source On State Resistance R DS(on) (W) Drain to Source Saturation Voltage V DS(on) (V) 1.0 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.2 0.1 0.05 10 A 0.2 VGS = 4 V 10 V 0.02 5A 0.01 4 8 12 Static Drain to Source on State Resistance R DS(on) ( W) Gate to Source Voltage 16 20 Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 0.04 20 A V GS = 4 V 0.02 0 -40 5,10 A 5, 10,20 A 10 V 0 40 80 Case Temperature 0.1 0.3 V GS (V) 120 160 Tc (C) 1 3 10 Drain Current Forward Transfer Admittance |y fs | (S) 0 50 30 100 I D (A) Forward Transfer Admittance vs. Drain Current 20 Tc = -25 C 25 C 10 75 C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK2939(L),2SK2939(S) Body-Drain Diode Reverse Recovery Time 5000 di / dt = 50 A / s V GS = 0, Ta = 25 C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 Ciss 1000 500 Coss 200 100 Crss 50 VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) V GS 40 20 8 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 40 50 4 0 100 1000 Switching Time t (ns) 12 V GS (V) 16 Gate to Source Voltage V DS (V) Drain to Source Voltage 60 V DS 0 6 V DD = 50 V 25 V 10 V 80 30 Switching Characteristics 20 I D = 35 A 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 10 t d(off) 300 tf 100 tr 30 10 t d(on) 3 1 0.1 V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100 2SK2939(L),2SK2939(S) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage 40 30 Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 50 10 V 5V V GS = 0, -5 V 20 10 Pluse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 125 I AP = 35 A V DD = 25 V duty < 0.1 % Rg > 50 W 100 75 50 25 0 25 50 75 100 125 150 Channel Temperature Tch (C) V SD (V) Avalanche Test Circuit V DS Monitor Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50W 0 VDD 7 2SK2939(L),2SK2939(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 q ch - c(t) = g s (t) * q ch - c q ch - c = 2.5 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 100 m 10 m Pulse Width PW (S) 1 Switching Time Test Circuit 10 Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2939(L),2SK2939(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SK2939(L),2SK2939(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK2939(L),2SK2939(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SK2939(L),2SK2939(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12