2SK2939(L) - Renesas Electronics

2SK2939(L),2SK2939(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-562D (Z)

5th. Edition

Mar. 2001

Features

• Low on-resistance

RDS =0.020 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

4

123

4

LDPAK

G

D

S

2SK2939(L),2SK2939(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS ±20 V

Drain current ID35 A

Drain peak current ID(pulse)Note1 140 A

Body-drain diode reverse drain current IDR 35 A

Avalanche current IAP Note3 35 A

Avalanche energy EAR Note3 105 mJ

Channel dissipation Pch Note2 50 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

2SK2939(L),2SK2939(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 60——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16V, VDS = 0

Zero gate voltege drain current IDSS ——10µAV

DS = 60 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V

Static drain to source on state RDS(on) — 0.020 0.026 ΩID = 15A, VGS = 10VNote4

resistance RDS(on) — 0.032 0.050 ΩID = 15A, VGS = 4V Note4

Forward transfer admittance |yfs|1423—S I

D

= 15A, VDS = 10V Note4

Input capacitance Ciss — 1100 — pF VDS = 10V

Output capacitance Coss — 540 — pF VGS = 0

Reverse transfer capacitance Crss — 200 — pF f = 1MHz

Turn-on delay time td(on) — 15 — ns ID = 15A, VGS = 10V

Rise time tr— 180 — ns RL = 2Ω

Turn-off delay time td(off) — 175 — ns

Fall time tf— 195 — ns

Body–drain diode forward voltage VDF — 0.95 — V IF = 35A, VGS = 0

Body–drain diode reverse

recovery time trr — 40 — ns IF = 35A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SK2939(L),2SK2939(S)

4

Main Characteristics

80

60

40

20

050 100 150 200

200

100

50

10

20

5

1

2

0.5

0.20.1 0.3 1 3 10 30 100

50

40

30

20

10

012345

50

40

30

20

10

0246810

3.5 V

4 V

5 V

V = 3 V

GS

6 V

4.5 V

10 V

Ta = 25 °C

100 µs

PW = 10 ms (1shot)

10 µs

1 ms

DC Operation (Tc = 25°C)

Tc = 75°C 25°C

–25°C

V = 10 V

DS

Pulse Test

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in

this area is

limited by R

DS(on)

Pulse Test

2SK2939(L),2SK2939(S)

5

0.1 3 100.3

0.5

0.02

0.05

0.01

0.10

0.08

0.06

0.04

0.02

–40 0 40 80 120 160

00.1 0.3 1 3 10 30 100

50

20

5

10

1

2

0.5

1

1.0

0.8

0.6

0.4

0.2

048

12 16 20

Pulse Test

I = 20A

D

5 A

10 A

10030

0.2

0.1

Pulse Test

DS

V = 10 V

Pulse Test

V = 4 V

GS

10 V

5, 10,20 A

20 A

5,10 A

75 °C

25 °C

Tc = –25 °C

V = 4 V

GS

10 V

Pulse Test

D

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

D

Drain Current I (A)

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Drain to Source On State Resistance

R ( )

W

DS(on)

Static Drain to Source on State Resistance

R ( )

W

DS(on)

2SK2939(L),2SK2939(S)

6

0.1 0.3 1 3 10 30 100 01020304050

2000

5000

1000

100

200

500

100

80

60

40

20

0

20

16

12

8

4

20 40 60 80 100

0

1000

500

50

100

20

10

200

1000

300

30

100

3

10

1

0.1 0.3 1 3 10 30 100

di / dt = 50 A / µs

V = 0, Ta = 25 °C

GS

10

20

50

V = 0

f = 1 MHz

GS

I = 35 A

D

V = 10 V, V = 3 0 V

PW = 5 µs, duty < 1 %

GS DD

tf

r

t

d(on)

t

d(off)

t

Crss

Coss

Ciss

V

GS

V

DS

V = 50 V

25 V

10 V

DD

V = 50 V

25 V

10 V

DD

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

2SK2939(L),2SK2939(S)

7

00.4 0.8 1.2 1.6 2.0

125

100

75

50

25

25 50 75 100 125 150

0

V = 0, –5 V

GS

10 V

5 V

50

40

30

20

10

I = 35 A

V = 25 V

duty < 0.1 %

Rg > 50

AP

DD

W

D. U. T

Rg

I

Monitor

AP

V

Monitor

DS

V

DD

50W

Vin

15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1V

V – V

AR AP DSS

DSS DD

2

Pluse Test

Channel Temperature Tch (°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Avalanche Test Circuit Avalanche Waveform

Repetitive Avalanche Energy E (mJ)

AR

2SK2939(L),2SK2939(S)

8

Vin Monitor

D.U.T.

Vin

10 V

R

L

V

= 30 V

DD

tr

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50W

90%

10%

t

f

Switching Time Test Circuit Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

g

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

DM

P

PW

T

D = PW

T

ch – c(t) = s (t) • ch – c

ch – c = 2.5 °C/W, Tc = 25 °C

q g q

q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

2SK2939(L),2SK2939(S)

9

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK2939(L),2SK2939(S)

10

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2939(L),2SK2939(S)

11

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2939(L),2SK2939(S)

12

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0