© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 13 1Publication Order Number:
2N6497/D
2N6497
High Voltage NPN Silicon
Power Transistors
These devices are designed for high voltage inverters, switching
regulators and line−operated amplifier applications. Especially well
suited for switching power supply applications.
Features
•High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 250 Vdc (Min)
•Excellent DC Current Gain −
hFE = 10−75 @ IC = 2.5 Adc
•Low Collector−Emitter Saturation Voltage @ IC = 2.5 Adc −
VCE(sat) = 1.0 Vdc (Max)
•Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc
Collector−Base Voltage VCB 350 Vdc
Emitter−Base Voltage VEB 6.0 Vdc
Collector Current − Continuous
− Peak IC5.0
10 Adc
Base Current IB2.0 Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_CPD80
0.64 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.56 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLTS − 80 WATTS
TO−220AB
CASE 221A
STYLE 1
123
4
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2N6497 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N6497G
AYWW
Device Package Shipping
2N6497 TO−220AB 50 Units / Rail
2N6497G TO−220AB
(Pb−Free) 50 Units / Rail
ORDERING INFORMATION
2N6497
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) (IC = 25 mAdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
250
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
10
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
10
3.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
75
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.5
2.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
150
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.4
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.4
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.45
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
ms
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Time Test Circuit
1.0
Figure 2. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.05 5.0
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
1.00.1 2.0
+ 11 V
0
SCOPE
RB [ 20
− 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
− 9.0 V D1
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
+ 125 V
RC [ 50
tr
td @ VBE(off) = 5.0 V
t, TIME (s)μ
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 3.00.30.2 0.5 0.7
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3
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(max) = 1.56°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
20
Figure 4. Active−Region Safe Operating Area
2.0
10 20 500
TC = 25°C
0.2
5.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
70
1.0
0.02
dc
5.0 1007.0
CURVES APPLY BELOW RATED VCEO
5.0 ms 1.0 ms 100 ms
IC, COLLECTOR CURRENT (AMP)
0.1
0.05
30 50 300200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
Figure 5. Turn−Off Time
IC, COLLECTOR CURRENT (AMP)
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
ts
tf
t, TIME (s)μ
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.3
0.2
0.05 5.01.00.1 2.00.07 3.00.30.2 0.5 0.7
100
80
60
20
00 20 40 60 80 100 120 140 160
Figure 6. Power Derating
TC, CASE TEMPERATURE (°C)
POWER DERATING FACTOR (%)
THERMAL DERATING
SECOND BREAKDOWN DERATING
40
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4
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
100
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
50
30
20
1.4
Figure 8. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
1.0
0.6
0.4
0.2
0
TJ = 25°C
VBE(sat) @ IC/IB = 5.0
4.0
Figure 9. “On” Voltages
IB, BASE CURRENT (mA)
00.01 0.05 0.1 0.2 1.0 10
3.2
VBE, BASE−EMITTER VOLTAGE (VOLTS)
70
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
, COLLECTOR CURRENT (A)μIC
−0.2−0.1
REVERSE FORWARD
TJ = 25°C
IC = 1.0 A 2.0 A
V, VOLTAGE (VOLTS)
+4.0
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+3.0
+1.0
0
−3.0
qVB for VBE
*qVC for VCE(sat)
*APPLIES FOR IC/IB v
hFE@VCE +10V
3
Figure 11. Collector Cutoff Region
VBE @ VCE = 10 V
1.2
0.8
0.02 0.5
2.4
1.6
0.8
+2.0
−1.0
−2.0
104
103
100
10−1
10−2
VCE = 10 V
10
7.0
0.05 0.1 0.2 0.3 1.00.07 0.70.5 2.0 3.0 5.0
3.0 A 5.0 A
2.0 5.0
VCE(sat) @ IC/IB = 5.0
IC/IB = 2.5
0.05 0.1 0.2 0.3 1.00.07 0.70.5 2.0 3.0 5.0 0.05 0.1 0.2 0.3 1.00.07 0.70.5 2.0 3.0 5.0
−55 to 25°C
−55 °C to 25°C
25°C to 150°C
25°C to 150°C
25°C
100°C
VCE = 200 V
TJ = 150°C
102
101
0 +0.6+0.4+0.2
1000
0.4
VR, REVERSE VOLTAGE (VOLTS)
10 4.0 6.0 10 20 60 200 400400.6 1.0 2.0
C, CAPACITANCE (pF)
500
100
70
50
TJ = 25°C
Cib
Cob
Figure 12. Capacitance
700
200
300
30
20
100
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5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
TO−220AB
CASE 221A−09
ISSUE AD
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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