MIL SPECS Ic oo00125 0001773 oO i NOTICE INCH-POUND OF VALIDATION * MIL-S-19500/372A(ER) NOTICE 1 30 September 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N4199 THROUGH 2N4206 Military specification MIL-S-i9500/372A(EL), dated 5 February 1968, with Amendment 5, dated 22 June 1977, has been reviewed and determined to be valid for use in acquisition. Custodian: Preparing Activity: Army - ER Arny~-ER AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 1 of 1 WULS. GOVERNMENT PRINTING OFFICE: 1989 604-033/10376MIL SPECS cf ovoo1es Ooou774 2 a MIL~S-19500/372A(EL) AMENDMENT 5 22 June 1977 SUPERSEDING AMENDMENT 4 10 April 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N4199 THROUGH 2N4206 This amendment forms a part of Military Specification MIL-S-19500/372A(EL), 5 February 1968. PAGE 1 PARAGRAPH 1.3 TABLE, items vexm 2/ and vegm 2/: Delete the minimum values. PARAGRAPH 1.4 TABLE, item Tyo9: Add maximum limit of "50 mAdc". PAGE 5 PARAGRAPH 4.2.1a(1) and 4.2.1a(2): Replace with the following: "(1) More than ten (10) failures throughout Group A tests. (2) Excess of failures permissible per TABLE C-1 in Specification MIL-S-19500 (for the applicable sample size) for Group B and C tests. (See (3) below.)" PAGE 6 PARAGRAPH 4.2.2d, second sentence: Replace with the following: "Hereto, the manufacturer may exercise an option to sub- ject a sample of ten (10) each units for each sublot through all Group A tests and through all Group C tests (when Group C tests are incumbent to be performed) except that, for the Group C life tests, only five (5) each of the selected test sample units need be subjected to each life test; and pertinent to these sampling options, the following evaluation criteria shall apply:" PAGE 9 TABLE I, Subgroup 2 covering Holding Current Test: Add maximum limit of "50 mAdc". PAGE 17 TABLE II, Subqroup 5 covering Repetitive Pulsing Life Test: In second column, change caption Subgroup 5" to read "Subgroup 6", also in second column, change the data under End-Point Tests to read Same as for Subgroup 5 above." FSC-5961MIL SPECS TCP Oo0o125 ooo1r7s y i MIL-S-19500/372A(EL) AMENDMENT TABLE III TABLE II1 TABLE ITI FIGURE 7, 5 PAGE 19 Subgroup 3, Peak Forward Gate Voltage Test: Delete this test and data in last four columns and substitute the following test: Forward gate surge Test circuit and test wee ee nee eee test (repetitive) conditions (procedure) per Figure 7 herein. Pem = 20 watts Subgroup 3, Repetitive Peak Forward Current Test: In the Conditions column, insert after Vego = 300 V, min, applied, ify(rep) = 100 A"; also, in the last four columns for this test, replace all existing data with: Subgroup 3, Burnout by Pulsing (Non-Repetitive) Test: Delete in its entirety. PAGE 28 Peak Forward Gate Voltage, vgx, test circuit: -Change FIGURE 7 title and details to the following: Oscilloscope Y-axis Common X-axis ta oO ee] : a, ip in CIRCUIT ELEMENTS 9 i) Ww rt + FL WAY i and CONDITIONS: Ri R, = 2 ohms, SOW, 41% Pulse t. = 10 usec; prr = 100 pps Generator P t= 1 sec., min. PROCEDURE FIGURE 7 1. Apply sufficient generator signal such that 10 volts is applied between gate to cathode (vgy). (Gate current (ig) shall be a minimum value of 2 amperes during this time). 2. Following step 1, apply sufficient generator voltage such that 5 amperes of gate current (ig) flows. (Gate to cathode voltage (vgx) developed during this interval shall be 4 volts minimum). Note: If, during the test, either of the minimum test conditions of a) 2 amperes as in (1), or b) 4 volts as in (2), cannot be obtained during the test as specified, increase the generator voitage until the minimum condition above is met. . Forward Gate Surge Test Circuit and Procedure. Page 2 ofMIL SPECS 1cff cooo125 Ooo177b & & MIL-S-19500/372A (EL) AMENDMENT 5 PAGE 29 * FIGURE 8, Burn-Out by Pulsing Test Circuit: Delete in its entirety. The margin of this amendment is marked with an asterisk to indicate were a change from the previous issue was made. This was done as a convenience only and the Government assumes no ligbility whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodian: Preparing Activity: Army - EL Army - EL (Project No. 5961-A709) *U.S. GOVERNMENT PRINTING OFFICE: 1977703-020/4134 Page 3 of 31. MIL SPECS Icj OO000ieS ooo??? & i MIL~S-19500/372A(EL) ? February 1968 SUPERSEDING MIL-S-19500/372(EL) 2 February 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N4199 through 2N4206 SCOPE 1.1 Scope.~ This specification covers the detail requirements for silicon, diffused-junction, PNPN, thyristors for application, particularly, as controlled rectifier, fast pulse-switching devices in compatible equipment circuits. (See 3,4 and 6.2 herein.) 1.2 Outline and dimensions.- See Figure 1 herein, 1.3 Ratings.- (At Te = +85C, unless otherwise specified .) w f{wfATA [wx vy [sc | 2c Min | 17 === |---| 100 4 6 0.2 -65 | -65 Max 1/ 20 | 2 --- 10 10 <= +100 | +150 V 2/ 3/ See Fig. 2 herein. ~ At Ta = +25C. At Te = +100C, 1.4 Particular electrical characteristics.- Vv I | I V V,(on) fi v Switching 3/ FBO FBO HOO GT GT F RBOM RM - Vde mAde mAdc wf mAdc 4 Vde 2/ Vde 2/ mAde | vde nsec 2N4199 300 2 5 50 1.5 25 4 50 200 2N4200 400 2 5 50 1.5 25 4 50 200 2N4201 500 2 5 50 1,5 25 4 250 150 2N4202 | 600 2 5 50 1.5 25 4 250 130 2N4203 | 700 2 5 50 1.5 25 4 250 100 2N4204 {| 800 2 5 50 1.5 25 4 250 100 2N4205 | 900 2 5 50 4.5 25 4 250 100 2N4206 {| 1000 2 5 50 1.5 25 4 250 100 VMinimum. 2 Maximum, 3a ts0, for all types: tq=200 nsec, max. toff=l5 usec, max,MIL SPECS 1cfoooo12s 0001778 Ty MIL-S-19500/372A(EL) 2, APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein: SPECIFICATIONS MILITARY " MIL-S-19500 Semiconductor Devices, General Specification For STANDARDS MILITARY MIL~STD-202 Test Methods For Electronic and Electrical Component Parts MIL-STD~750 Test Methods For Semidonductor Devices (Copies of specifications, standards, drawings, and publications required by contractors in connection with specific procurement functions should be obtained from the procuring agency or as directed by the contracting officer. Both the title and number or symbol should be stipulated when requesting copies.) 2.2 Other publications.- The following document forms a part of the specification to the extent specified herein. Unless otherwise indicated, the issue in effect on date of invitation for bids or request for proposal shall apply. NATIONAL BUREAU OF STANDARDS Handbook H28 Screw-Thread Standards for Federal Services, (Application for copies should be addressed to the Superintendent of Documents, Government Printing Office, Washington, D. C. 20402. 3. REQUIREMENTS 3.1 Requirements.- Requirements for the thyristor shall be in accordance with Specifi- cation MIL-S-19500 and as otherwise specified herein,MIL SPECS Ich OOOO1LeS DOOV?7T 1 | MIL-S-19500/372A(EL) 3.2 Abbreviations and symbols.- The abbreviations and symbols used herein are defined in Specification MIL-S-19500, and as follows: dVp/dt sete ae . - tate of forward-voltage rise P(AV) . . + se ee a + average power dissipated by the thyristor while operating under specified conditions 3.3 Design arid construction.- The thyristor shall be of the design, construction, and physical dimensions specified on Figure 1. 3.3.1 Terminal arrangement.~ The terminal arrangement on the thyristor shall be as indicated in Figure 1. 3.3.2 Operating position.~ The thyristor shall be capable of proper operation in any position. 3.4 Par formance chevocteristics. - The thyristor performance characteristics shall be as specified in Tables |, Il, and Ill herein. Except where specifically differentlated for respective thyristor types (she 1.3, 1.4, and Tables |, Il, and II herein), the performance requirements, Including characteristics, ratings, and test conditions, apply equally to all thyristor types covered herein. 3.5 Marking.~ Except as otherwise specified herein, marking shall be in accordance with Specification MIL-S-19500. If any specification-requirements walver has been granted, the product-identification marking shall consist of the classification type designation only. The manufacturer's identification" and country of arigin may, at option of the manufacturer, be omitted from being marked directly on the semiconductor device covered herein. 4. QUALITY ASSURANCE PROVISIONS 4.1 General.- Except as otherwise specified herein, the responsibility for inspection, general procedures for acceptance, classification of inspection, and inspection conditions and methods of test shall be in accordance with Specification MIL-S-19500, Quality Assurance Provisions. 4.1.1 Inspection lot.- Applicable to the semiconductor device(s) covered herein, the term Inspection lot shall be as defined in paragraph 4.3.2.1 of Specification MIL-S-19500 except that the 6-week-period time limitation stipulated therein shall be considered as not compulsory.MIL SPECS Ici o000125 0001780 & i MIL~S-19500/372A(EL) - 4.1.1.1 Prdonditioned-unit constituency of Inspection lots.- All semiconductor devices covered herein, in each inspection lot presented for Quality Conformance inspection, shall have been subjected to the following preconditioning: (a) Operated for 4 hours, minimum, under the following steady-state conditions: (1) Te = +100 Be - (2) Vego = rating pertinent to the respective thyristor. (b) Subjected, after (a) above to the following end-point test(s): : (1) D.C. Forward Blocking (Leakage) Current test as specified in Table I, subgroup 4, herein. (b) All thyristors that fail to meet the above process-conditioning and testing requirements shall be removed from the respective lot, and the test-failure identity and quantity removed shall be recorded in the permanent lot history. Where the total of failures encountered exceeds 20% of the lot quanitity, this shall be considered cause for rejection of the entire lot. (See (d), immediately below.) (d) The manufacturer shall maintain and moke avallable for perusal and review at any time, throughout a minimum period of 3 years, to the authorized Government representative or other contracting customer concerned, complete lot-by-lot records of the thyristors subjected to, and the results found for, the process~conditioning and testing requirements herein, (See 6,3 herein.) (e) The preconditioning and testing requirements specified above need not be repeated if previously effected during standard production procedures by manufacturer (see (d), immediately above), and if such compliance is determined as acceptable beforehand by the responsible Government representa~ tive. 4.2 Qualification and Acceptence Inspection.- Qualification and Acceptance Inspection shall be in accordance with Specification MIL-S~19500, Quality Assurance Provisions, and as otherwise specified herein. Groups A, B, and C inspection shall consist of the examina- tions and tests specified in Tables I, Il, and Ill respectively, herein, Acceptance Inspection shall include inspection of Preparation for Delivery. (See 5,1 herein.)MIL SPECS cM ooo01n2e5 o001781 T i MIL-S~19500/372A(EL) 4.2.1 Qualification Inspection of lots contalning multiple thyristor types. - Where the qualification inspection lot is made up of sublots, the constituency of lot sample(s), subjection of sample(s) fo tests, and lot evaluation will be acceptable in accordance ,with a and b below: a. For the highest-voltage (V.eBO) type in the lot, the sample size shall be the applicable statistical-sampling, tightened-LTPD quantity of units (per Table C-1 In Specification MIL~-S-19500). The sample units shall be subjected to customary Group A, 8B, and C testing. Relative to failures encountered as result of tests, the following shall be cause for rejection of the entire lot and denial of qualifica- tion. (1) More than two (2) failures in Group A tests, (2) More than two (2) failures in Group B and C tests, exclusive of Life tests. (3) Mor: than one (1) faflure: in each Life test. _Hereto, the sample quantity . shall be based upon a sample size for an Acceptance Number of 1, per Table C-1 of Specification MIL-S-19500. - b. For each lower-voltage (V, BO) type (below the highest voltage type - ~- see a, above) in the lot, ten (iod sample units for each voltage~level type shal! be sub- jected to Group A and C tests only. Relative to failures encountered as a result of tests, the following shall be ccukecfor tejetian. of the entire: lot and denial of qualification: : (1) More than one (1) failure within each sample representing any particular lower-voltage type. - {2) More than four (4) fallures, combined, in instance where four (4) or more sublot samples (representing respective lower-voltage types) have been subjected to tests.MIL SPECS Ich OoooLes ooo1782 1 i MIL-S-19500/372A(EL) 4.2.2 Quality conformance inspection of lots containing multiple thyristor types. - For lots containing more than one thyristor type covered herein, subjection of adequate samples on a sublot basis to tests in accordance with a, b, , and d, below, will be acceptable. . _a. The sublot containing the highest-voltage type shall be subjected to Group A and B, and Group C test (when the Group C tests are Incumbent to be performed). b. The sublot containing the highest-volume type. shall be subjected to Group A and B, and Group C testing (when the Group C tests are incumbent to be performed, c. Where the coincidence of the highest-volume type being also the highest~voltage type occurs in a presented lot, only one sublot need be subjected to tests in fulfillment of the requirements of both a and b above. d. The sublot(s) containing thyristor types other than those concerned in a and b, above, shall be subjected to all Group A tests and to all Group C tests (when the Group C tests are incumbent to be performed); Hereto, the manufacturer may exercise an option to subject a sample of ten (10) each units for each sublot through all Group A tests and through all Group C tests (when Group C tests are incumbent to be performed), except thot the following evaluation criteria shall pertinently apply: (1) More than one (1) failure In any such sublot sample shall be cause for rejection of the lot; or (2) Where four or more such sublot samples are subjected to tests, the incidence of more than four (4) failures for all the sublots tested shall be cause for rejection of the lot. 4,2.3 Specified LTPD for subgroups.- The LTPD specified for a subgroup in Toble I,lI, and Ill herein shall apply for all of the tests, combined, in the subgroup. 4.2.4 Group B-Group C life test samples.- Samples that have been subjected to Group B, 340~hour life test may be continued on test for 1000 hours in order to satisfy Group C life test requirements. These samples shall be predesignated, and shall remain subject to the Group C 1000-hour acceptance evaluation after they have passed the Group B, 340-hour acceptance criteria; hereto, the following shall apply: a. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1000 hours on these samples shall be computed for 1000-hour acceptance criteria.MIL SPECS Ic O0001e5 0001783 3 | MIL-S- 19500/372A(EL) 4.2.5 Group C testing.- Unless otherwise specified, Group C tests shall be performed on the initlal lot and thereafter on a lot every 6 months, (See Table Ill herein.) The contractor shall, throughout the course of o contact or order, permit the Government representative to scrutinize all test data and findings covering manufacturer's test program on Group C characteristics and parameters for the product concerned. Upon determination by the Government Inspector (in advance of Group C, -month, test results) that Group C parameters are not being adequately met, the Government Inspector may require lot-by-lot inspection, normally for a minimum of 3 consecutive lots, to be performed for required Group C tests. . 4.2.6 Disposition of sample units.~ Sample units that have been subjected to Group B, Subgroup 2, and Group C, Subgroup 4 tests shall not be delivered on the contact or order. Sample units that have been subjected to and have passed Group B, Subgroups 1, 3, 4, and 5 tests and Group C, Subgroup 1, 2, 3, 5, and 6 tests, (these tests to be considered non- destructive), may be delivered on the contract or order provided that, after Group B and Group C inspection Is terminated, those sample units are subjected to and pass Group A inspection. Defective units from any sample group that may have passed group inspection shall not be delivered on the contract or order until the defect(s) has been remedied to the satisfaction of the Government. 4.3 Particular examination and test requirments.- 4.3.1 Interval for End=Point Test maasurements.- All applicable End-Point Test measurements shall be performed after sample units have been subjected to required physical- mechanical or environmental test(s), in accordance with the following time-delay limitations: (a) For Qualification inspection: within 24 hours, (b) For Quality Conformance inspection: within 96 hours; however, at discretion of the Government inspector, a more protracted interval may be allowed. 4.3.2 Mechanical damage resulting from tests.~ Except for intentionally deforming, mutilating, or dismembering mechanicakstress tests to which samples are subjected, there shall be no evidence of mechanical damage to any sample unit as a result of any of the Group A, B, or C tests. (See 4,3.3 below.)MIL SPECS Icy 0000125 OOo178y 5 7 MIL~S-19500/372A(EL) 4.3.3 Chipped-paint damage resulting from tests.- Where units having o paint finish have had chipping of paint result from mounting procedure or other application of test implements, the menlfstution. of chipping of paint shall not be cause for indication of the unit(s) as a test failure. Any refinishing of such units (other than those subjected to destructive tests) relative to acceptability for shipment on contract or order, shall satisfy applicable "workmanship" requirements in Speclfication MIL-S-19500 and shall be acceptable to the responsible inspection authority. 4,3.4 Turn-off time (pulse, forward) tst.- The device (thyristor under test) shall be triggered "ON" and remain conducting until the equilibrium forward anode current has been reached. Then the anode current shall be abruptly reduced to zero, and a negative gate bias applied. During the application of the forward blocking voltage at 250 V/uSec, max., the device must remain in the "OFF" state. Turn-off time is then. measured as the time interval between the 10% decay of forward anode current and the instant when for- ward blocking voltage may be applied. The circuit in Figure 5 herein, or equal, shall be used to perform this measurement. 4.3.5 Gate non-trigger voltage test.~ Test procedure shall be based upon the follow- ing description: Gate non-trigger voltage Is the maximum value of gate voltage which may be applied without causing the device to switch from the blocking state to the "ON" state. 4,3.6 Durability of terminal lugs.- The lug ends of all terminals shall remain intact on terminals throughout all physical, mechanical, and environmental tests herein. 4.3.7 Terminal Strength (Stud Torque) test.- Acceptance criteria after the stud torque for external threaded parts (dimension of Figure 1 herein) shall be in accordance with Handbook H-28, 4.3.8 Repetitive Pulsing Life test.- The thyristors under test shall be subjected to the prescribed forward pulses at the prescribed repetition rate. Case temperature shall be maintained at the level specified, throughout the test.MIL SPECS Ic o00012e5 0001785 7? i MIL~S~19500/372A(EL) Table |. Group A inspection. Test Method per Examination or test Conditions LTPD Symbol Limits Unit MIL-STD-750 V Min Max Subgroup | 2071 Visual and mechanical ~o wee eee ee eee examination Subgroup 2 7 422) Gate trigger current Vo =7 Vde ~ ler oo" 50 mAdc R, = 200 ohms Ri = 100 ohms 4221 Gate trigger voltage Vo =7 Vde Vet 77 1.5 Vde R, = 200 ohms Ry = 100 ohms 4201 Holding current " Gate open luoo 5 --- mAdc = Dynamic forward Test circuit per Ve w-- 25 v on" voltage Fig, 3 herein; -(pulse) = 30 A Ig (pulse) = 200 mA min @t = 1.5 + 0,5 usec teligy) = 20 nsec max Rep.rate = 100 pps vy = adjust Veaya4 per Fig. 3 dataMIL SPECS MIL-S-19500/372A(EL) 1cj Doo00LeS Ooo1zab 4 i Table !. Group A inspection, - (Cont'd). Test Method per Examination or test - Conditions LTPD Symbol Limits Unit MIL-STD-750 V Min Max Subgroup 3 10. --- Forward~current delay Teast circuit per . tg . <= 200 nsec time Fig. 4 herein; Lo I-(pulse) =30A ig (pulse) = 200 mA min @ t= 15+ 0.5 usec t (igi) = 20 nsec max Rep.rate = 100 pps per Fig. 3 data --- Forward-eurrent rise Test circuit per wee eee wee times Fig. 4 herein; (pulse) =30A lex (pulse) = 200 mA min @ ty =1,5240,5 ysec t (iy) = 20 nsec max Rep.rate & 100 pps Vy = adjust VEBXM per Fig. 3 data 2N4199 t. -~-- 200 nsec 2N4200 t, --- 200 nsec 2N4201 t, =-- 150 nsec 2N4202 t. -~-- 130 nsec 2N4203 t, =--- 100 nsec 2N4204 t ~-- 100 nsec 2N4205 t, e-- 100 nsec 2N4206 t. --- 100 nsec 1QMIL SPECS Icf/coooies ooo1za7 o MIL-S-19500/372A(EL) Table !. Group A inspection. - (Cont'd). 11 Test Method per Examination or test Conditions CTPD Symbol" * Timits ~~ Unit MIL-STD-750 V/ in Max Subgroup 3 =" (Cont'd) 2/ Turn-off time ~ Tast circuit per toe 20 ~susec (pulse, forward) Fig 5 herein; Te = +85C; Ip(pulse) =30A @, = 10 usec Vex = 75 V (during OFF dV_/dt=250 vusec only) ~~ Turn-off time Test circult per tore dS suse (conventional) Fig. 6 (or equiv. circuit) i-(pulse) =2A PW = 100 usec Subgroup 4 10 4206 D.C, forward blocking Te = +100C (leakage) currents Bias Cond. D 2N4199 Vv = 300 V I --- 2 mAdc 2N4200 Vise = 400 V eo --- 2 mAdc 2N4202 Veo = 600 V lepQ ont 2 ~mAde 2N4203 VeRO = 700 V lEBO a-- 2 mAdc 2N4204 Vv, BO = 800 V ERO ~-- 2 mAdc 2N4205 Vino = 900 V eo ona 2 mAde 2N4206 VeRO = 1000 V leno ~nm- 2 mAdeMIL SPECS cf goooi1eS 0001784 e | MIL-S-19500/372A(EL) Table !. Group A inspection - (Cont'd). - eRe ee ee Ce ee Eh Et eee eee Test Method per Examination or test Conditions - LTPD = Symbol Limits Unit MIL-STD-750 V/ Min Max Subgroup 4 ~ (Cont'd) 4211 Peak reverse blocking Te = +100C (leakage) current: A. C. meth.,Bias Cond.D 2N4199 VRM = 50 vde ipgomM ~~~ 4 mAdc 2N4200 VRM = 50 vde . iRBOM ~~~ 4 mAdc 2N4201 VRM = 250 vde IRBOM ~~~ 4 mAdc 2N4202 VRM = 250 vde iRBOM --- 4 mAdc 2N4203 VRM = 250 vde iRBOM ~~~ 4 ~~ mAdc 2N4204 YRM = 250 vde iRBOM --- 4 mAde 2N4205 VRM = 250 vde ipBOM 77-4 mAdc 2N4206 YRM = 250 vde TRBOM --- 4 mAdc 4221. Gate non-trigger 3/ Vv 0.2 --- Vde voltage Tc =+100C GNT Vy = 0,2 Vde Vo = FROWesP rating for ea. type) Re = 200 ohms Re = 1 kohms --- Rate of linear forward T, =+]00C dVe/dt 250 --- V/usec voltage rise Van = Vepolresp- rating for ea.type); 4/- V - 2 See 3.4 and 4,3.3 herein. See 4,3.4 herein. JS 4/ See 4,3.5 herein. See Fig. 5 herein. 12MIL SPECS TCM Go0o12s ooo17as 4 i MIL-S-19500/372A(EL) Table II. Group B inspection. Test Method per - Examination or test. Conditions LTPD Symbol ~ Limits Unit MIL-STD~750 - V/ 2/ Min Max Subgroup 1 10 2066 Physical dimensions --- -~ one see ann Subgroup 2 15 2026 Solderability Omit aging; 2/ wre ee men wee 1051 Temperature cycling Test Cond. F. ett mee cee 1056 Thermal shock Test Cond. B wat tet ee ane (glass strain) 2036 Terminal strength Test Cond. D2 wee een eee wee (stud torque) Torque=15 Ib-in, t=15 sec. 4/ 2036 Terminal strength Test Cond. F, --- wae ane go- (bending stress) , Method B cathode terminal Weight =1 1b t=15 sec, 2036 Terminal strength Test Cond. F, wet ee eee nen (bending stress), Method B gate terminal Weight=0.5 Ib . . t=15 sec 2036 Terminal strength Test Cond. DI wee wee eee wee (terminal torque) a Torque=10 oz-in. . . t= 1021 moistore resistance Ne ia conditioning --- 9 --- wooo 4221 Gate trigger current Vo = 7 Vde lot --- 50 mAde Re = 200 ohms Re = 100 ohms 4221 Gate trigger voltage. Vo = 7 Vde Vor --- 1.5 Vde . R. = 200 ohms RE = 100 ohms 13MIL SPECS MIL-S-19500/372A(EL) Table Il. Group B inspection -= (Con t'd). Ic oooo1es 0001790 o Tt Test Method per Examination or fast Conditions LTPD Symbol Limits Unit MIL-STD-750 V 2/ Min Max Subgroup 2 End-Point tests Cont'd): 4206 D.C forward blocking Tce =+100C (leakage) current: Bias Cond. D 2N4199 V, = 300 Vv leEBO we- 2 mAdc 2N4200 Vinon400 V lego <== 2 mAde 2N4202 V., 7600 V ~ BO --- 2 mAdc 2N4203 VEBO=700 Vv BQ 2A 2N4204 VeRO 000 Vv leRO s-- 2 mAdc 2N4205 V_- ~=900 V BO --~ 2 mAdc 2N4206 VEnon 1000 Vv po |S mde 4211 Peak reverse blocking Tc= +100C (leakage) current: A.C.meth.,Bias Cond. D 2N4199 Vp,47=00 vde i --- 4 mAdec 2N4200 ve =50 vde inom n<- 4 mAdc 2N4201 Vp y=250 vde iRBOM ~-- 4 mAde 2N4202 VR M290 vde iRBOM w-- 4 mAdc 2N4203 RM=290 vde iRBOM 777 4 ~~ mAdc 2N4204 Vpn 7290 vde iRBOM -- 4 mAdc 2N4205 VRM=290 vde inp OM 77" 4 = mAdc 2N4206 Vpan290 vde iRBOM w= 4 mAdc . Subgroup 3 15 2016 Shock Non-operating met eee eee ooo 1500 G . 14 5 blows of 0.5 msec ea. in orlentations Xl, Yi, Y2 (total = 15 blows)MIL SPECS I J oooo1es QOO1L?791 2 a MIL-S-19500/372A(EL) Table 11, Group B inspection - (Cont'd). Test Method per Examination or test Conditions LTPD Symbol Limits Unit MIL-STD=750 . V 2/ Min Max Subgroup 3-(cont'd) 2056 Vibration, variable frequency = --~ w-- eee ann --- 2006 Constant acceleration 10.000 G Orientations X1, Yl, 2 End-Point tests: ame as for Subgroup 2 above Subgroup 4 10 6/ Seal (leak rate) Test Cond. C, -~ --- 10 atm procedure III; cc/sec Test Cond. A for gross leaks 7/ Subgroup 5 7 1031 High-temperature life Tg = +150C ert eee eee --- (non-operating) t = 340 hrs a/ End-Point tests: 422) Gate trigger current Vo=7 Vde I --- 60) mAdc = GT R, = 200 ohms RL = 100 ohms 422] Gate trigger voltage Vo = 7Vde Vet --- 1.6 Vde R. = 200 ohms Re = 100 ohms WSMIL SPECS Icy Oooo1es OOo1u792 4 | MiIL-S~-19500A(372A(EL) Table 11, Group B Inspection-(Cont'd). Test Method per Examination or test Conditions LTPD = Symbol Limits Unit MIL-STD-750 V/ 2/ Min Max Subgroup'5, Ehd-Point tests ont a). 4206 D.C. forward blocking T= +100C (leakage) current: Bias Cond. D 2N4199 v =300V | =-- 3 mAdc 2N4200 Ve po =400V Ire === 3 mAde 2N4201 VegQ v0Ov BO --- 3 mAdc 2N4202 VeRQ 00V leg Qo 77 3. mAdc 2N4203 VegQ /00V leRO --- 3 mAdc 2N4204 Vega C00 leno --- 3 mAdc 2N4205 VegQ 200 lee O --- 3 mAdc 2N4206 Vego7000V ERO --- 3 mAdc 4211 Peak reverse blocking TA= +100C (leakage) current: AzC. meth. , BiasCond.D 2N4199 v.,,=50 vde i -~- 6 mAdc 2N4200 vRMo50 vde jRBOM 6 mAde RM .RBOM 2N4201 VR M7200. vde iRBOM 7 6 mAdc 2N4202 Vem 220 vde iRBOM --- 6 mAdc 2N4203 VR M7200 yde iRBOM 777 6 mAdc 2N4204 Va Mn220 vde i --- 6 mAde 2N4205 Vp=250 vde iRBOM --- 6 mAde 2N4206 Vem 200 vde iRBOM --- 6 mdAdc of 16MIL SPECS TcMoooo1es ooow7aa bs MIL-S-19500/372A(EL) Table fl. Group B inspection-(Cont'd). " Test Method per Examination of test . nditions | LTPD Symbol Limits Unit MIL-STD-750 V 2/ "Min Max Subgroup 3 0 9/ Repetitive pulsing Te=+65C wee eee wee --- life ay VEpoer rating or ea, type IF(pulse)=30 Adc @, = 240.1 usec & pre = 340.3 kHz -Gate:pulse=200 mAdc @ t, =20 nsec Vape -6 Vde- GK during OFF state only) t=340 hrs - Endpoint tests: Same as for Subgroup 4 above V 2/ See 3.4, 4.3,1, and 4.3.3 herein. See 4.3.6 herein. -3/ ~~ Immersion time = 101 sec., immersion depth = sufficient to cover entire flatted portion of gate and cathode terminal, 4/ - 5/ See 4.3.7 herein. . Applied to flat of ea. terminal. 6/ 7/ ~ Per Method 112 in Standard MIL-STD-202. ~ Unpainted units from the pertinent lot may be used for this test. 8/ , of . See 4.2.2 herein. . See 4.3.8 herein, 17MIL SPECS MIL-S-19500/372A(EL) V/ Table Hl, Group Cc inspection. ~ tcf oooon2s ooo1744 3 i Test Method per Examination or test Conditions LTPD ~~ Symbol Limits Unit MIL-STD-750 2/ ; Min Max Subgroup 1 2 1001 Barometric pressure, Pressure: 3/ <= wee wee -<- reduced (altitude Normal mounting -operation): t=] min., minimum Measurement during test: 4206 D.C. forward blocking Bias Cond. D (leakage) current: 2N4199 Ven n=300 V ! -- 2 mAde 2N4200 Vepordo0 V eg see 2 mAde 2N4201 Vepor500 V IpQ nS 2N4202 Vino n600 V ipso n= 2 mAde 2N4203 Vieron700 V. lrpQ0 wn" 2S mA 2N4204 Vigo 800 V lpg" 2S mAde 2N4205 WFBO_ 00 Vv lEBO w=- 2 mAde Subgroup 2 -5C 4/ Low-Temperature LN = ~65 9 eee awe ene <~ operation: 4206 D.C. forward blocking Bias Cond. D (leakage) currents . 2N4199 V., ~=000 V_ I <- 2 mAde 2N4200 vEBO=400 V Keo w= 2mAde 2N4201 VepQ7a00 Vv ERO w~~ 2 mAde 2N4202 V, BO 000 V leRO --- 2 mAdc 2N4203 Veror700 V lego." 2s mA 2N4204 Vepor809 V lpm 0" 2mAde 2N4205 sNfBO_ 00 V ERO we- 2 mAdc 2N4206 . FBQ 1000 Vv lrao v-- 2 mAde 18MIL SPECS tcf oooo1es ooo17as T MIL-S~19500/'372AEt) om Table Il. Group C Inspection = (Cont'd). + Limits Test Method per Examination or test MIL-STD-750 2 Conditions LTPD Symbol Min. Max. Unit Subgroup 2 (Cont'd) Low Temp. Oper~(Cont'd) : 4221 Gate trigger current V.=7 Vde 1 --- 100 mAdc oA GT R,=200 ohms Ry =100 ohms 4221 Gate trigger voltage Vor7 Vde Vet ow 18 Vde R=200 ohms R,= 100 ohms Subgroup 3 20 -<-- Peak forward gate Test circuit and GK 6 10 Vde voltage test conditions . (procedure) per Fig. 7 herein. -<- Repetitive peak forward Pulse width = 10 usec ieylrer) 100 wee OA current @ prr=60 Hz . VepQrs00Vmin, applied T c= +85C Gate pulse: 16K =200 mAdc t,=20 nsec, max t =] sec. ,min oo Burn-out by pulsing Test circuit and pulse) 150 --- A (non-repetitive) test conditions (procedure) per Fig. 8 herein. | 19MIL SPECS MIL-S-19500/372A(EL) Tc oooo12s ooo17s 1 f 1 Table tl, Group C inspection. u (Cont'd). Test Method per Examination or test -- Limits MIL-STD-750 ~~" 2 Conditions LTPD Symbol Min. - Max. Unit subgroup 3 ~ End-point tests: 4221 Gate trigger current Vo = 7 Vde | GT --~ 60 mAdc R. = 200 ohms Re = 100 ohms 4221 Gate Trigger voltage Vo=7 Vde Ver -- 1.6 Vde ~ R- = 200 ohms RE = 100 ohms 4206 D.C. forward blocking T= +100C (leakage) current: Bias Cond. D 2N4199 Vea n=s00. V 4 --- 3 mAde 2N4200 Vegon400 V reQ =e 3 mAde 2N4202 Ven 97600 Vv leg O --- 3 mAdc 2N4203 Vv BO7200 Vv ERO --- 3 mAdc 2N4204 Vin or800 V BOO 8s mde 2N4205 Ve or700 Vv eo wn 3s md 2N4206 VEBQ 000 Vv leg 0 --- 3 mAdc 4211 Peak reverse blocking Te = +100C (leakage) current A.C. meth. , Bias Cond.D 2N4199 Vey 50 vde iggomM o-~- 6 ~~ mAde 2N4201 Vo .= 250 vde i --~ 6 mAde RM__ RBOM 2N4202 VRM72o0 vde iRBOM --- 6 mAdc 2N4203 Vp Mazo vde iRBOM ea) mAdc 2N4204 Yam 220 vde tpn OM oT 6 - mAde 2N4205 Van 200 vde ipBOM OTTO mAdc 2N4206 VRM7290 vde 'RBOM 6 mAde Subgroup 4 20 Salt atmosphere -- -<- wrt eee nee 1041 (corresion) 20 End-point tests: Same as for Subgroup 3 above iF(pulse)=30 Adc @t_ = 240.1 usec & Grr =3t 0.3 kHz Gate: pulse=200 mAdc @ t, = 20 nsec "VW = -6 Vde (during GK OFF state only) =1000 hrs MIL SPECS Ic OOO01i2e5 gO0179? 3 i MIL-S-19500/372A(EL) Table tll. Group inspection. - (Cont'd) Test Method per Examination or test = Conditions LTPD Symbol Limits MIL-STD-750 2/ Min Max = Unit Subgroup _5 A=10 1031 High-temperature life Ty, g=+150C --- wee wee wee fron-operating t=1000 hrs 3/ End-point tests: Same as for Subgroup 3 above Subgrup: 6 A=15 1036 Repetitive pulsing Te= +65C --= wee wee eee life 5/; 6/ VeBO resp- rating for ea.type Mooe 4.2.3 herein seq 3.4, 4.3.1, 4.3.3, and 4.3.6 herein. 3/ . At 8 mmHg (pressure) for Types 2N4199 thru 2N4202; at 15-mmHg (pressure) for Types 2N4203 thru 24206. Measurement(s) shall be made after thermal equilibrium has been reached at the temperature specified. Nooo 4.2.2 herein. 6/ See 4.3.9 herein.MIL SPECS 1c} co00125 Ooouss s &f MIL-S-19500/ 372A(EL) ome ce ee ee re ees ee ee NOTES 1,5) |" ' 625 Heh of Fe L___-~~----~---- OPTIONAL - DESIGN OF 425 Pe LUG TERMINALS ~300 S (NOTES 1,5) 7 i. Ls 4 | 4 top 175 -060 ~ 453 All dimensions 2189 _ +400 A in inches. 163 mo Saas { INE (NOTE 4) rh i | | {TI i NOTES: | 1. Square, or radius-arc, on end of terminal is optional. 2. Angular orientation of terminals to each other and to hexagonal device-seat is undefined. 3. Achamfer (or undercut) on one or both ends of hexagonal portions is optional. 4. Complete threads to extend to within 2-1/2 threads of head (seat). - 5. Flag (-lug) portion of terminal shall not extend to beyond the periphery of of hexagonal seat. - Figure 1. Outline and dimensions. tees 2 8 Amaximum Averace power (WATTS) J a 9 Ss G pe MIL SPECS cf cooo1es ooo1799 2 MIL=S-19500/372A(EL) 2 - i <5 1 i ree 4 1.20 30 40 80 6 70 8 90 10 110 "CASE TEMPERATURE (C) Figure 2. Power Dissipation, PAV) vs Te nomograph, : aMIL SPECS TCM oooo12s ooo1soo t & MiL~$-19500/372A(EL) + PULSE ay _FORMING "i " NETWORK . PULSE GENERATOR L Vrexn CIRCUIT ELEMENTS: Ry = See text below. Ro = 479 yo t L = 200 hy, 15 kan i -om D, = 1N4007 or equal i Ve (ON) o 8 . . TIME > [- 0.5nSECe] PROCEDURAL REQUIREMENTS: The device shall be triggered ON" and remain conducting until the equilibrium forward current has been reached. The forward voltage - drop from anode to cathode shall be measured at a point 0.5 pSec after Vppyy has decreased. to one-half of the specified operating voltage. Forward anode current and pulse repetition Yate shall be. as specified. Adjust Vy until the Vppxy peak equals the Vpn specified for each device type. The pulse forming network shall be designed to produce a 1.5 + .5Sec current pulse width, with the ripple of the flat portion of the current pulse limited to + 3 amps. The combination of . the pulse forming network and load resistor Ry shall be selected to produce a peak current to b switched as specified for the level of Vrpo, The gate trigger pulse icx (pulse) from the generator shall be as epecified.. . Figure 3. Dynamic Forward "On" Voltage, (Ve), test circuit. 9A - vt 2 tt soe toeMIL SPECS rc ff cooo12s ooo1sor 1 a MIL=S-19500/372A(EL) Gate Sense o PULSE Ry , GENERATOR L CIRCUIT ELEMENTS: R = See text below. = 470. = EN4007 or equal L = 200 hy, 15 ka. - . C =0.1 uF, 1.6 kV, ceramic-disc (10 ea., 01 pF, in parallel!) PROCEDURAL REQUIREMENTS: Adjust the gate trigger current igx (pulse) from the generator to the conditions specified. Adjust Vz until the Vepxo peak equals the YFpo specified for each device type. The delay time shall be the time inter- val between the 10% point of gate current rise (monitored at Gate Sense Point} and the 10% point of anode current rise (monitored at Current , Sense Point). The rise time shall be the time interval between the 10% and 90% points on the forward anode current pulse. Ry is composed of the parallel combination of 2 watt carbon resistors selected so. that the total walue of Ry (between 8 @ and 308) will allow a peek forvard current flow of 30+2A. ue , - os Figure 4. Forward-Current ty and t test circuit. oe 7 at ben ee 25 So we ay as. AZnNyrawaMs m<res MIL SPECS Ic ooo0225 ooo1so2 3 MIL-S-19500/372A(EL) FORWARD PULSE CURRENT SUPPLY . REAPPLIEO RATE GENERATOR . . | GATE TRIGGER _ =-O SUPPLY Osc. & Curr. Probe ==570 - . tlo-- D, 2 each 1N3893 = Osc, . 0 Fast Recovery Diodes o- TEST CIRCUIT , connected in series. & PROCEDURE A 30 enp forvard current pulse is initiated ty the gate. trigger supply. The forward current pulse shall be 3 to 10 pec. long measured at the 50% points end shall decay to zero within 0.4 Sec, 20 Sec after a 10% decay in for- ward current, the rate generator shall reapply . a forward voltage. at a maximum rate of 250 yiSee. The thyristor shall: not revert to.the conducting state ~ during application of the reapplied voltage. A short duration reverse current spike may occur due to the abrupt removal of. forward. current ,. but will be limited by the fast recovery diode Dy. _ 7 * r | 4 4 j- Gate ce j VOLTAGE { Ly \ Vs -, yi (durin GK state only) i War 10 % DECAY Va 10 PSEC. | I LA FORWARD CURRERT 50 % DECAY. \ t- RATEO Veso* Ve exm FOR EACH OEVICE - _ REAPPLIED RATE SLOPE 8 2s0V/ysec MAX: eng omnes ech NEED I ine RE we - CONOUCTING STATE XN _ . TiME : Figure 5. Turn-Off Time (Pulse, Forward) fest. circuit. "126 > . *MIL SPECS Ic o00o12s ooorao3 5 & MIL-S-19500/372A(EL) Re 7 a 30 Volts Regulated - Gonditions: Rie R3- = 470n, 1 Watt Re = 10Ka, 1 Watt Rg = _ Variable Resistor, 0-2 Rs = Variable Resistor, 0.5. Rg = Non-Inductive Shunt, 0.422. Cy = (0-20 uf Capacitors Figure 6. Turn-Off Time (Conventional) test -etreuit. Lo 27MIL SPECS Tffoocoxes ooosoy 7 MIL-S-19500/372A(EL) Ecope - . : Scope - Scope - Y Axis - Tominion:-X< Apes 4g % SCR | Under Test - ae id tw - + - | Pulse rn Generator CIRCUIT: ELEMENTS and CONDITIONS: R, = 22, 50 W, 1% . Vert l0y, mary: bop: ts #10 usec;, iprr=100 pps t= Asec., fain - Note: ; The maximum gate voltage that can be applied tothe . : gate-cathode junction of the device under test in the forward. * direction will be limited by the peak gate, current of 5 amperes. Figure 7. :Peok Forward Gate Voltage, Yowe test clrevit. *Tcffocoo1es oooraos 4 ff MIL SPECS MIL~S-19500/372A(EL) esez0A~ *yINDsj9 ysay Bursyng Ag yno-uing g ainbi4 oad parjddo (ady yooe Joj) Buiyos aaioedsas = A pasn gg = 4 fyosi = YI {(aniyyedas-uou) sppasayuy oynuim y @ sesjnd Q| . saprAoid = Ned (@Boyj0A epoup Burd}ddo esojaq yes). YY OO = 2 vw Ly = % wu] 022 = _ 4 - SNOIIGNOD UNV SLNIW312 LINDY BITOA ZI-0 , goanog o8ezIOA . Qgda eoanos 29NIL SPECS _ rMJooo0125 Goozgob o ff MIL--19500/372A(EL) 5, PREPARATION FOR DELIVERY - .% Preparation for delivery.- Preparation for delivery, and the inspection of prepatation for delivery, shall be in accordance with Specification MIL-S-19590. 6. NOTES &.1 Notes.- The notes included in Specification MIL-S-1951), with the following additions or exceptions, are applicable to this document. 6.2 Application guidance. a. The thyristors conforming to requirements in this document {issue are _ interchangeable with the thyristors covered by previous issue(s) of this document. b. To insure proper circuit application, particular attention should be given to the differential voltage-and-current requirements, ratings, and perfor- mance characteristics pertinent to the individual thyristor types covered herein. c. The guidance in Spacification MiL-S-19500, Appendix A, relative to absolute maximum ratings" should be heeded in connection with the Ratings data presented herein for the respective thyristors. d. Thyristor type 2N4202 covered herein is Intended, for use in compatible military-equipment circuits, as the preferred, direct replacement for thyristor type (Part No,) SCR 201-8 previously procured per U. S. Army Drawing No. SM=-B=482473, 6.3 Preconditioning test records.- When requested, a copy of manufacturer's test data and findings covering the preconditioning accomplishment on the thyristors being shipped shall accompany the devices concerned. 6.4 Quallfication.~ With respect to products requiring qualification, awards will be made only for such products as have, prior to the time set, for openin of bids, been tested and approved for inclusion in Qualified Products List (QPL)-195 0, whether or not such, products have actually been so listed by that date. Information pertaining to qualification of products covered by this specification should be requasted from the Commanding General, U. S, Army Electronics Command, Fort Monmouth, New Jersey 07703, attention: AMSEL~PP-EM-2, 6.5 Changes from previous Issue.- Asterisks are not used in this revision to Identify changes with respect to the previous Issue, due to the extensiveness of the changes. Custodian: , Preparing activity: Army-EL Z Army-EL 30 Project No. 5961-A117