SSM3K15FS
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications
Analog Switching Applications
• Compact package suitable for high-density mounting
• Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage VGSS ±20 V
DC ID 100
Drain current
Pulse IDP 200
mA
Drain power dissipation (Ta = 25°C) PD 100 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1B
Weight: 2.4 mg (typ.)
D P
1 2
3
12
3
SSM3K15FS
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA
Drain-Source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V
Drain Cut-off current IDSS V
DS = 30 V, VGS = 0 ⎯ ⎯ 1 μA
Gate threshold voltage Vth V
DS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V
Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS
ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0
Drain-Source ON resistance RDS (ON)
ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0
Ω
Input capacitance Ciss V
DS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF
Reverse transfer capacitance Crss V
DS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF
Output capacitance Coss V
DS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF
Turn-on time ton ⎯ 50 ⎯
Switching time
Turn-off time toff
VDD = 5 V, ID = 10 mA,
VGS = 0~5 V ⎯ 180 ⎯ ns
Switching Time Test Circuit
(a) Test circuit (b) VIN
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
VDD = 5 V
D.U.
<
=
1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
Ta = 25°C
VDD
OUT
IN
5 V
0
10 μs
50 Ω
RL
(c) VOUT
ton
90%
10%
0 V
5 V
10%
90%
toff
tr tf
VDD
VDS
(
ON
)
SSM3K15FS
2007-11-01
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Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source voltage VDS (V)
ID – VDS
Drain current ID (mA)
ID – VGS
Drain current ID (mA)
Drain current ID (mA)
RDS (ON) –ID
Drain-Source on resistance
RDS (ON) (Ω)
Gate-Source voltage VGS (V)
Gate-Source voltage VGS (V)
Ambient temperature Ta (°C)
RDS (ON) – Ta
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
RDS (ON) – VGS
0
0
100
250
121.5 0.5
50
150
200
VGS = 2.1 V
2.3
2.5
2.7
Common Source
Ta = 25°C
3 4 10
0.01
0
1
1000
243 1
0.1
10
100
Ta = 100°C
Common Source
VDS = 3 V
−25°C
25°C
4 V
VGS = 2.5 V
0
0
4
10
80 200160 40
2
6
8
120
Common Source
Ta = 25°C
0
0
2
6
4108 2
1
4
5
6
3
25°C
Ta = 100°C
−25°C
Common Source
ID = 10 mA
0
−25
2
8
50 150125 0
1
5
6
75
4
4 V
VGS = 2.5 V
Common Source
ID = 10 mA
3
7
25 100
0
−25
0.4
2
50 150125 0
0.2
1.2
1.6
75
1
Common Source
ID = 0.1 mA
VDS = 3 V
0.8
1.8
25 100
0.6
1.4
SSM3K15FS
2007-11-01
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Drain current ID (mA)
⎪Yfs⎪ – ID
Forward transfer admittance
|Yfs| (mS)
t – ID
Switching time t (ns)
IDR – VDS
Drain reverse current IDR (mA)
Drain-Source voltage VDS (V)
Drain current ID (mA)
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation PD (mW)
C – VDS
Capacitance C (pF)
Drain-Source voltage VDS (V)
t – ID
Switching time t (ns)
Drain current ID (mA)
1
1
10
30
1000
100
100010 100
3
5
50
300
500 Common Source
VDS = 3 V
Ta = 25°C
0
0
100
250
−1.4−0.4
50
150
200
−0.2 −0.6 −0.8 −1 −1.2
Common Source
VGS = 0 V
Ta = 25°C
G
D
S
IDR
10
0.1
100
300
10000
1000
1001 10
30
50
500
3000
5000
Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C
t
r
ton
tf
toff
10
0.1
100
300
10000
1000
1001 10
30
50
500
3000
5000
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
t
r
ton
tf
toff
0.1
0.1
1
3
100
10
1001 10
0.3
0.5
5
30
50
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
Coss
Ciss
0
0
100
250
16040
50
150
200
20 60 80 100 140 120
SSM3K15FS
2007-11-01
5
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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