ALPHANUMERIC INDEX CROSS-REFERENCE (Continued) Motorola Motorola Motorola Motorola Industry Direct Similar Page Industry Direct Similar Page Part Number Replacement Replacement Number Part Number Replacement Replacement Number 2N5664 2N3585 3-20 2N5882 2N5882 3-123 2N5665 2N3685 3-20 2N5883 2N5883 3-127 2N5671 2N6338 3-188 2N5884 2N5884 3-127 2N5672 2N6339 3-188 2N5885 2N5885 3-127 2N5678 2N6378 3-191 2N5886 2N5886 3-127 2N5683 2N5683 3-112 2N5929 2N6338 3-188 2N5683JAN 2N5683JAN 3-112 2N5930 2N6338 3-188 2N5683JTX 2N5683JTX 3-112 2N5931 2N6341 3-188 2N5683UTXV 2N5683JTXV 3-112 2N5932 2N6338 3-188 2N5684 2N5684 3-112 2N5933 2N6338 3-188 2N5684JAN 2N5684J AN 3-112 2N5935 2N6341 3-188 2N5684JTX 2N5684JTX 3-112 2N5936. 2N6338 3-188 2N5684TXV 2N5684)TXV 3-112 2N5937 2N6341 3-188 2N5685 2N5685 3-112 2N5954 2N6318 3-185 2N5685JAN 2N5685JAN 3-112 2N5955 2N6317 3-185 2N5685JTX 2N5685JTX 3-112 2N5956 2N6317 3-185 2N5685JTXV 2N5685JTXV 3-112 2N5976 2N5882 3-423 2N5686 2N5686 3-112 2N5971 2N5882 3-123 2N5686JAN 2NS686JAN 3-112 2N5972 MJ15003 3-713 2N5686JTX 2N5686JTX 3-112 2N5974 MJE2955 3-904 2N5686TXV 2N5686JTXV 3-112 2N5975 MJE2965 3-904 2N5729 2N5337 3-97 2N5976 MJE2985 3-904 2N5730 2N5339 3-97 2N5977 MJE3055 3-904 2N5733 2N6274 3-168 2N5978 MJE3085 3-904 2N5734 2N6338 3-188 2N5979 MJE3065 3-904 2N5737 2N5878 3-120 2N5980 MJE2955 3-904 2N5738 2N5880 3-123 2N5981 MJE2955 3-904 2N5739 2N5878 3-120 2N5982 2N5988 3-131 2N5740 2N5880 3-123 2N5983 MJE3065 3-904 2N5741 2N5883 3-127 2N5984 MJE3085 3-904 2N5742 2N6029 3-105 2N5985 2N5991 3-134 2N5743 2N5883 3-127 2N5986 2N6498 3-214 2N5744 MJ4502 3-536 2N5987 2N6490 3-207 2N5745 2N5745 3-68 2N5988 2N6491 3-207 2N5745JAN 2N5745JAN 3-68 2N5989 2N5989 3-131 2N5745JTX 2N5745JTX 3-68 2N5990 2N5991 3-131 2N5745STXV 2N5745JTXV 3-68 2N5991 2N5991 3-131 2N5758 2N5758 3-116 2N6021 TIP32C 3-1073 2N5759 2N3055A 3-9 2N6022 TIP32C 3-1073 2N5760 2N5760 3-116 2N6023 2N6124 3-154 2N5804 2N6306 3-181 2N6024 2N6124 3-184 2N5805 2N6543 3-215 2N6025 2N6125 3-154 2N5838 2N6308 3-181 2N6026 2N6125 3-154 2N5839 2N6308 3-181 2N6029 2N6029 3-105 2N5840 2N6308 3-181 2N6030 2N6030 3-105 2N5867 2N3789 3-56 2N6031 2N6031 3-105 2N5868 2N3790 3-56 2N6032 2N6275 3-168 2N5869 2N3714 3-26 2N6033 2N6277 3-168 2N5870 2N3714 3-26 2N6034 2N6034 3-136 2N5871 2N3789 3-56 2N6035 2N6035 3-135 2N5872 2N3790 3-56 2N6036 2N6036 3-135 2N5873 2N3714 3-26 2N6037 2N6037 3-135 2N5874 2N3714 3-26 2N6038 2N6038 3-138 2N5875 2N5875 3-120 2N6039 2N6039 3-135 2N5876 2N5876 3-120 2N6040 2N6040 3-139 2N5877 2N5877 3-420 2N6041 2N6041 3-139 2N5878 2N5878 3-120 2N6042 2N6042 3-139 2N5879 2N5879 3-123 2N6043 2N6043 3-139 2N5880 2N5880 3-123 2N6044 2N6044 3-139 2N5881 2N5881 3-123 2N6045 2N6045 3-139 *Consult Motorola if a direct replacement is necessary. 1-5Bipolar Power Transistors TABLE 1 METAL TO-204 (Formerly TO-3), TO-204AE STYLE 1: PIN 1. BASE 2. EMITTER CASE. COLLECTOR CASE 1-06 40 mil pins (TO-204AA) CASE 197-01 60 mil pins (TO-204AE TYPE) CASE 197A-02 60 mil pins (TO-204AE} Resistive Switching IcCont | VcEO{sus) . , ts te fT Pp (Case) Amps Volts Device Type hee @ic BS BS @ ic MHz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 2.5 800 MJ8501 7.5 min 0.5 4 2 1 125 1500* MJ12002 1.11 min 2 1 2 4 typ 75 3.5 325 2N3902 30/90 1 1.2 typ | 0.1 typ 1 2.8 100 4 1500* MJ12003 2.5 min 3 1 3 100 5 200 MJ410 30/90 1 2.5 100 250 MJ3029 30 min 0.4 1 3 125 300 MJ411 30/90 1 2.5 100 400 2N6543 7/35 3 4 08 3 6 100 MJ13070 8 min 3 1.5 0.5 3 125 450 MJ16002 5 min 5 3 0.3 3 125 MJ16004 7 min 5 27 0.35 3 125 2N6834 10/30 3 2.7 0.35 3 15 125 500 MJ16002A 5 min 5 3 0.3 3 125 700 MJ8502 7.5 min 1 4 2 25 150 800 MJ8503 7.5 min 1 4 2 2.5 150 850* MJ12020 5 min 5 0.13 typ 3 15 125 1500* BU208 2.25 min 45 0.6 typ 4.5 4 typ 60 BU208A 2.25 min 4.5 8 typ 0.4 typ 4.5 4 typ 90 BU208Dt 2.25 min 4.5 0.6 typ 4.5 4 typ 60 MJ12004 2.5 min 45 1 4.5 4 100 6 100 2N5758 25/100 3 0.7 typ | 0.5 typ 3 1 150 120 2N5759 20/80 3 0.7 typ | 0.5 typ 3 1 150 140 2N5760 15/60 3 0.7 typ | 0.6 typ 3 1 150 # |Wfel ( 1 MHz, ## Darlington (continued) * BIBRICEX or V(BR)CES t D Suffix on this device signifies internal C-E Diode 2-3MOTO = SEMICONDUCTOR rr TECHNICAL DATA 2N5758 2N5760 HIGH-VOLTAGE HIGH-POWER SILICON TRANSISTORS . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. @ High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vde (Min) 2N5758 = 140 Vde (Min) 2N5760 @ DC Current Gain @ Ic = 3.0 Adc hee = 25 (Min) 2N5758 = 15 (Min) 2N5760 @ Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vde (Max) @ Ic = 3.0 Adc MAXIMUM RATINGS Rating Symbol 2N5758 | 2N5760 Unit Collector-Emitter Voltage VCEO 100 140 Vde Collector-Base Voltage : VcB 100 140 Vde Emitter-Base Voltage VEB 7.0 Vde Collector Current Continuous ic 6.0 Adc Peak 10 Base Current Ip 4.0 Adc Total Device Dissipation @ Tc = 25C Pp 150 Watts Derate above 25C 0.857 wrc Operating and Storage Junction, TJ. Tstg -65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit | Thermal Resistance, Junction to Case Ayo 1.17 Scmw Indicates JEQEC Registered Data Pp. POWER DISSIPATION (WATTS) Safe area iimits are indicated by Figure S a 25 50 7 100 128 Te, CASE TEMPERATURE (C} Both limits are applicable and must be observed. FIGURE 1 POWER DERATING 180 175 200 6 AMPERE POWER TRANSISTORS NPN SILICON 100-140 VOLTS 150 WATTS STYLE 1 PIN 1, BASE 2. EMITTER A CASE COLLECTOR 1 | E+ -+ oeysame 5 PLANE ton T= Eels EE {-a-] +] 601310008 @[~| v@| NOTES: 1. DIMENSIONING AND 7 DLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. CASE 1-06 TO-204AA (TO-3) 3-1162N5758, 2N5760 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) [ Characteristic | Symbol Min Max [ Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1} VCEO({sus) Vde (Ile = 200 mAde, ig = 0) 2N5758 100 - 120 - 2N5760 140 Collector Cutoff Current 'cEO mAdc (VceE = 50 Vdc, tg = 0) 2N5758 - 1.0 (Vee = 60 Vdc, Ig = 0} = 10 (VcE = 70 Vde, Ig = 0) 2N5760 ~ 1.0 Collector Cutoff Current IcEx mAde (VcE = Rated Vog. VBE lots) = 1.5 Vde) - 1.0 (Vog = Rated Veg, Vee loft) = 1.5 Vde, Tce = 150C) - 5.0 Collector Cutoff Current lcBo mAdc (Vcg = Rated Vcg. te = 0} - 1.0 Emitter Cutoff Current leBo mAdc (VpE = 7.0 Vde, Ic = 0) - 1.0 ON CHARACTERISTICS (1) DC Current Gain EE _ (Ic = 3.0 Adc, Ve = 2.0 Vde) 2N5758 25 100 2N5760 15 60 {Ig = 6.0 Adc, Voce = 2.0 Vde} All Types 5.0 _ Coliector-Emitter Saturation Voltage VCE(sath Vde {Ic = 3.0 Adc, Ig = 0.3 Ade) 1.0 (Ig = 6.0 Adc, Ig = 1.2 Ade) - 20 Base-Emitter On Voltage VBEton) Vdc (We = 3.0 Adc, Vee = 2.0 Vdc} - 15 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fT MHz (Ic = 0.5 Adc, VcE = 20 Vdc, fies = 0.5 MHz) 1.0 - Output Capacitance Cob pF (Vog = 10 Vdc, Ie = 0, f = 0.1 MH2) - 300 Small-Signal Current Gain hte ~ (le = 2.0 Adc, Voge = 10 Vdc, f = 1.0 kHz) 15 ~ Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width & 300 ys, Duty Cycle S2.0% (2) fy Pte $* frest FIGURE 2 SWITCHING TIME TEST CIRCUIT vec +30V Rc RB SCOPE 51 01 th das = DUTY CYCLE = 1.0 ~ 40V Rg and Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS 01 MUST BE FAST RECOVERY TYPE, eg MBD5300 USED ABOVE Ig ~100 mA MS06100 USED BELOW Ip 100 mA *cor PNP test circuit, reverse all polarities and D1. 3-117Ic, COLLECTOR CURRENT {AMP} 2N5758, 2N5760 FIGURE 3 TURN-ON TIME a7 06 t, TIME (8) 0.07 0.05 0.06 a1 0.2 a4 Vec=30V Ig/lp = 10 VBE Ty: aff) 5.0V = 250C a6 10 2.0 4.0 Ic, COLLECTOR CURRENT {AMP) FIGURE 4 THERMAL RESPONSE 2 Pink) hee | aye = 1.17 9C/W Max O CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME Atty TJipk) - Te =P 200 300 DUTY CYCLE, D = ty/tz eyed} $00 2.0 30 5.0 20 50 100 1000 1, TIME (ms) FIGURE 5 ACTIVE-REGION SAFE OPERATING AREA _ 07 z 05 Ex 03 25 02 a2 zo we a4 5 B0.07 Wan a 005 as 0.07 = 0.03 Ts SINGLE PULSE 10.02 = = a0 aor 0.02 0.03 0.05 a1 3203 05 1.0 10 5.0 Ty = 200C 3.0 20 1.0F WIRE LIMITED ast THERMALLY LIMITED @ Te = 25C 0.3}-_ SECOND BREAKDOWN L 02 CURVES APPLY BELOW . RATED VcEO 2N5760 Ot 30 100 200 300 20 10 50 70 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate lc ~ Vcg limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate, The data of Figure 5 is based on Tjipk) = 200; T is variable depending on conditions. Second breakdown pulse limits are valid for duty cyctes to 10% provided T jin) < 200C. Tyipk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3-118, CAPACITANCE (pF) hee, OC CURRENT GAIN t, TIME (us} 0.06 0.1 01 0.2 2N5758, 2N5760 FIGURE 6 TURN-OFF TIME Voc> 30V 02 04 06 1.0 2.0 40 Ic, COLLECTOR CURRENT (AMP) FIGURE 7 CAPACITANCE Ty > 26C a5 1.0 2.0 5.0 10 20 50 Ve, REVERSE VOLTAGE (VOLTS) FIGURE 8 DC CURRENT GAIN Vee =2.0V Ty = 1509C 259C 0.2 a4 06 1.0 2.0 40 Ic, COLLECTOR CURRENT (AMP) 3-119 6.0 100 6.0