©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100
8A, 1000V Ultrafast Diode s
The MUR8100E and RUR8100 are ultrafast diodes
(trr < 75ns) with soft recovery characteristics. They have a
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clampi ng diodes and rectifie rs in a v ariety of swit ching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
char a cte ristic s m in im ize ringin g an d el ec trical n o i se i n many
power switching circuits, thus reducing power loss in the
s w it chi ng transistor.
Formerly developmental type TA09617.
Symbol
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Sw itc hin g Circu its
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
MUR8100E TO-220AC MU8100
RURP8100 TO-220AC RURP8100
NOTE: When ordering, use entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
MUR8100E
RURP8100 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1000 V
Worki n g Peak Reverse Vol ta g e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V RWM 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V R1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC) 8A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave 20kHz) 16 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave 1 Phase 60Hz) 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ-55 to 175 oC
Data Sheet December 2002
©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
Electrical Specifications TC = 25oC, Unless Otherwise Specified.
SYMBOL TEST CONDITION MIN T YP MAX UNITS
VFIF = 8A - - 1.8 V
IF = 8A, TC = 150oC--1.5V
IRVR = 1000V - - 100 µA
VR = 1000V, TC = 150oC - - 500 µA
trr IF = 1A - - 85 ns
IF = 8A, dIF/dt = 200A/µs - - 100 ns
taIF = 8A, dIF/dt = 200A/µs-50-ns
tbIF = 8A, dIF/dt = 200A/µs-30-ns
QRR IF = 8A, dIF/dt = 200A/µs - 500 - nC
CJVR = 10V, IF = 0A - 30 - pF
RθJC --2.0
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous re verse current.
trr = Reverse recover y time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Rev erse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORW ARD CURRENT vs FORWARD VOLTA GE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
22.5
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
40
0.5
10
00.511.5
25oC100oC
175oC
3
VR, REVERSE VOLTAGE (V)
0200 400 600 800
200
0.01
0.1
1
10
1000
0.001
25oC
100oC
175oC
IR, REVERSE CURRENT (µA)
MUR8100E, RURP8100
©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRE NT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRE NT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0.5
0
80
20
81
40
60
t, RECOVERY TIMES (ns)
4
tb
100
trr
ta
TC = 25oC, dIF/dt = 200A/µs
ta
trr
tb
25
50
75
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0
100
125
0.5 81 4
TC = 100oC, dIF/dt = 200A/µs
125
75
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0
ta
50
150
trr
tb
25
100
0.5 814
TC = 175oC, dIF/dt = 200A/µs
2
0140 150 160 175165
4
6
8
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
155
DC
SQ. WAVE
170145
VR, REVERSE VOLTAGE (V)
40
20
0
80
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
100
60
MUR8100E, RURP8100
©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - V DD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
MUR8100E, RURP8100
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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