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November 2014

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

1

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FCPF400N80ZL1 Unit

VDSS Drain to Source Voltage 800 V

VGSS Gate to Source Voltage - DC ±20 V

- AC (f >1 Hz) ±30

IDDrain Current - Continuous (TC = 25oC) 11* A

- Continuous (TC = 100oC) 6.9*

IDM Drain Current - Pulsed (Note 1) 33* A

EAS Single Pulsed Avalanche Energy (Note 2) 339 mJ

IAR Avalanche Current (Note 1) 2.2 A

EAR Repetitive Avalanche Energy (Note 1) 0.36 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PDPower Dissipation (TC = 25oC) 35.7 W

- Derate Above 25oC0.29W/

oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TL

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds 300 oC

Symbol Parameter FCPF400N80ZL1 Unit

RθJC Thermal Resistance, Junction to Case, Max. 3.5 oC/W

RθJA Thermal Resistance, Junction to Ambient, Max. 62.5

FCPF400N80ZL1

N-Channel SuperFET® II MOSFET

800 V, 11 A, 400 mΩ

Features

•Typ. R

DS(on) = 340 mΩ

• Ultra Low Gate Charge (Typ. Qg = 43 nC)

• Low Eoss (Typ. 4.1 uJ @ 400 V)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)

• 100% Avalanche Tested

• RoHS Compliant

• ESD Improved Capability

Applications

• AC-DC Power Supply

• LED Lighting

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new

high voltage super-junction (SJ) MOSFET family that is utilizing

charge balance technology for outstanding low on-resistance

and lower gate charge performance. This technology is tailored

to minimize conduction loss, provide superior switching perfor-

mance, dv/dt rate and higher avalanche energy. In addition,

internal gate-source ESD diode allows to withstand over 2kV

HBM surge stress. Consequently, SuperFET II MOSFET is very

suitable for the switching power applications such as Audio,

Laptop adapter, Lighting, ATX power and industrial power appli-

cations.

TO-220F

GDS

G

D

S

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCPF400N80ZL1 FCPF400N80ZL1 TO-220F Tube N/A N/A 50 units

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 800 - - V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 1 mA, Referenced to 25oC-0.8-V/

oC

IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V - - 25 μA

VDS = 640 V, TC = 125oC - - 250

IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1.1 mA 2.5 - 4.5 V

VGS = VDS, ID = 0.68 mA 2.5 - 4.5

RDS(on) Static Drain to Source On Resistance

VGS = 10 V, ID = 5.5 A - 0.34 0.4

ΩVGS = 10 V, ID = 7.1 A - 0.35 0.4

VGS = 10 V, ID = 7.1 A, TC = 150oC - 0.89 -

gFS Forward Transconductance VDS = 20 V, ID = 5.5 A -12-S

Ciss Input Capacitance VDS = 100 V, VGS = 0 V,

f = 1 MHz

- 1770 2350 pF

Coss Output Capacitance - 51 70 pF

Crss Reverse Transfer Capacitance - 0.5 - pF

Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 28 - pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 138 - pF

Qg(tot) Total Gate Charge at 10V VDS = 640 V, ID = 11 A,

VGS = 10 V

(Note 4)

-4356nC

Qgs Gate to Source Gate Charge - 8.6 - nC

Qgd Gate to Drain “Miller” Charge - 17 - nC

ESR Equivalent Series Resistance f = 1 MHz - 2.3 - Ω

td(on) Turn-On Delay Time

VDD = 400 V, ID = 11 A,

VGS = 10 V, Rg = 4.7 Ω

(Note 4)

-2050ns

trTurn-On Rise Time - 12 34 ns

td(off) Turn-Off Delay Time - 51 112 ns

tfTurn-Off Fall Time - 2.6 15 ns

ISMaximum Continuous Drain to Source Diode Forward Current - - 11 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A

VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A - - 1.2 V

trr Reverse Recovery Time VGS = 0 V, ISD = 11 A,

dIF/dt = 100 A/μs

- 395 - ns

Qrr Reverse Recovery Charge - 7.4 - μC

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. IAS = 2.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

11020

2

10

50

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

ID, Drain Current[A]

VDS, Drain to Source Voltage[V]

VGS = 10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

34567

1

10

50

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25oC

ID, Drain Current[A]

VGS, Gate toSource Voltage[V]

0 6 12 18 24 30 35

0.2

0.3

0.4

0.5

0.6

0.7

*Note: TC = 25oC

VGS = 20V

VGS = 10V

RDS(ON) [Ω],

Drain to Source On-Resistance

I

D

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1

1

10

50

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

150oC

IS, Reverse Drain Current [A]

V

SD

, Body Diode Forward Voltage [V]

25oC

0153045

0

2

4

6

8

10

VDS = 640V

VDS = 400V

VDS = 160V

*Note: ID = 11A

VGS, Gate to Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 100 1000

0.1

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

Capacitances [pF]

VDS, Drain to Source Voltage [V]

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Eoss vs. Drain to Source Voltage

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 1mA

BVDSS, [Normalized]

Drain to Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 5.5A

RDS(on), [Normalized]

Drain to Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

0

2

4

6

8

10

12

ID, Drain Current [A]

TC, Case Temperature [oC]

0.1 1 10 100 1000

0.01

0.1

1

10

100

100μs

10μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain to Source Voltage [V]

Operation in This Area

is Limited by RDS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

0 200 400 600 800

0

2

4

6

8

10

12

EOSS, [μJ]

VDS, Drain to Source Voltage [V]

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

5

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

10-5 10-4 10-3 10-2 10-1 100101102

0.005

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZθJC(t) = 3.5oC/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

ZθJC(t), Thermal Response [oC/W]

t1, Rectangular Pulse Duration [sec]

5

t

1

P

DM

t

2

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

6

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

IG = const.

FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET

FCPF400N80ZL1 Rev. C1

www.fairchildsemi.com

7

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

L

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

+

_

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

LL

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

4.60

4.30

10.70

10.30

3.00

2.60

3.40

3.00

10.30

9.80

0.90

0.50

(3X)

2.74

2.34

(2X)

2.14

3.30

2.70

B

1.20

1.00

1.20

0.90

(2X)

B

19.00

17.70

13

0.50

M

A

2.90

2.50

B

15.70

15.00

2.70

2.30

B

0.60

0.40

6.60

6.20

1 X

45°

NOTES:

A. EXCEPT WHERE NOTED CONFORMS TO

EIAJ SC91A.

B

DOES NOT COMPLY EIAJ STD. VALUE.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-2009.

F. DRAWING FILE NAME: TO220V03REV1

G. FAIRCHILD SEMICONDUCTOR

www.onsemi.com

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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