BFG19S NPN Silicon RF Transistor* * For low noise, low distortion broadband amplifiers in antenna and telecommunication 4 3 systems up to 1.5 GHz at collector currents 2 1 from 10 mA to 70 mA * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFG19S Marking Pin Configuration BFG19S 1 = E 2 = B 3 = E 4 = C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 210 Base current IB 21 Total power dissipation1) Ptot 1 W C V mA TS 75C Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 75 K/W 1 T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 2005-10-13 1 BFG19S Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 10 A hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured 2005-10-13 2 BFG19S Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 4 5.5 - Ccb - 0.8 1.1 Cce - 0.4 - Ceb - 4.1 - GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 2 - f = 1.8 GHz - 3 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - Power gain, maximum available1) G ma |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz - 11 - f = 1.8 GHz - 5.5 - - 35 - Third order intercept point at output IP 3 dBm VCE = 8 V, I C = 70 mA, f = 900 MHz, ZS = ZL = 50 1G 2 1/2 ma = |S21/S12| (k-(k -1) ) 2005-10-13 3 BFG19S Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 2 1200 mW 1000 K/W RthJS Ptot 900 800 700 10 1 600 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 500 400 300 200 100 0 0 20 40 60 80 100 120 C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2005-10-13 4 0 Package SOT223 1.6 0.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 15 MAX. 4 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 3.5 0.2 Package Outline BFG19S 4.6 0.25 M A 0.28 0.04 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout Manufacturer Date code (Year/Calendarweek) 2005, June Type code BCP52-16 Pin 1 Example Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 2005-10-13 5 BFG19S Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-10-13 6