© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev. 3
1Publication Order Number:
HGTG20N60A4/D
IGBT - SMPS
600 V, 40 A
HGTG20N60A4
Description
The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a
bipolar transistor. This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low conduction
losses are essential. This device has been optimized for fast switching
applications, such as UPS, welder and induction heating.
Features
•40 A, 600 V @ TC = 110°C
•Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
•Typical Fall Time: 55 ns at TJ = 125°C
•Low Conduction Loss
•This is a Pb−Free Device
Applications
•UPS, Welder
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MARKING DIAGRAM
G
E
C
G
C
E
G
TO−247−3LD
CASE 340CK
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
20N60A4 = Specific Device Code
$Y&Z&3&K
20N60A4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
HGTG20N60A4
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Emitter Voltage BVCES 600 V
Collector Current Continuous TC = 25°CIC70 A
TC = 110°C 40 A
Collector Current Pulsed (Note 1) ICM 280 A
Gate to Emitter Voltage Continuous VGES ±20 V
Gate to Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C (Figure 2) SSOA 100 A at 600V
Power Dissipation Total TC = 25°CPD290 W
Power Dissipation Derating TC > 25°C 2.32 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG −55 to +150 °C
Maximum Lead Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief 334
TL
TPKG
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
PACKAGE MARKING AND ORDERING INFORMATION
Device Device Marking Package Shipping
HGTG20N60A4 20N60A4 TO−247−3LD 450 / Tube
ELECTRICAL SPECIFICATIONS (TC = 25°C, unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Breakdown Voltage BVCES IC = 250 A, VGE = 0 V, 600 − − V
Emitter to Collector Breakdown Voltage BVECS IC = −10 mA, VGE = 0 V 20 − − V
Collector to Emitter Leakage CurrentICES VCE = 600 V TJ = 25°C− − 250 A
TJ = 125°C− − 2.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 20 A, VGE = 15 V TJ = 25°C−1.8 2.7 V
TJ = 125°C−1.6 2.0 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250 A, VCE= 600 V 4.5 5.5 7.0 V
Gate to Emitter Leakage Current IGES VGE = ±20 V − − ±250 nA
Switching SOA SSOA TJ = 150°C, RG = 3 VGE = 15 V,
L = 100 H, VCE = 600 V
100 − − A
Gate to Emitter Plateau Voltage VGEP IC = 20 A, VCE = 300 V −8.6 −V
On−State Gate Charge Qg(ON) IC = 20 A, VCE = 300 V VGE = 15 V −142 162 nC
VGE = 20 V −182 210 nC
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 25°C,
ICE = 20 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 ,
L = 500 H,
Test Circuit (Figure 20)
−15 −ns
Current Rise Time trI −12 −ns
Current Turn−Off Delay Time td(OFF)I −73 −ns
Current Fall Time tfI −32 −ns
Turn−On Energy (Note 2) EON1 −105 −J
Turn−On Energy (Note 2) EON2 −280 350 J
Turn−Off Energy (Note 3) EOFF 150 200 J
HGTG20N60A4
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ELECTRICAL SPECIFICATIONS (TC = 25°C, unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionsSymbol
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 125°C,
ICE = 20 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 ,
L = 500 H,
Test Circuit (Figure 20)
−15 21 ns
Current Rise Time trI −13 18 ns
Current Turn−Off Delay Time td(OFF)I −105 135 ns
Current Fall Time tfI −55 73 ns
Turn−On Energy (Note 2) EON1 115 −J
Turn−On Energy (Note 2) EON2 −510 600 J
Turn−Off Energy (Note 3) EOFF −330 500 J
Thermal Resistance, Junction−Case RJC − − 0.43 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 20.
HGTG20N60A4
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4
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
Figure 1. DC Collector Current vs. Case
Temperature
Figure 2. Minimum Switching Safe Operating
Area
Figure 3. Operating Frequency vs. Collector
to Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On−State
Voltage
Figure 6. Collector to Emitter On−State
Voltage
ICE, Collector to Emitter Current (A)
fMAX, Operating Frequency (kHz)
VGE, Gate to Emitter Voltage (V)
Isc, Peak Short Circuit Current (A)
tsc, Short Circuit Withstand Time (s)
VCE, Collector to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
VCE, Collector to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
TC, Case Temperature (°C)
ICE, DC Collector Current (A)
VCE, Collector to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
Isc
tsc
20
0
80
40
60
100
25 50 75 100 125 150
Package Limit
VGE = 15 V
60
20
80
100
40
120
00100 200 300 400 500 600 70
0
40
300
500
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = Conduction Dissipation
(Duty Factor = 50%)
RJC = 0.43°C/W, See Notes
510 20 30 40 50 0
2
10
100
250
350
45014
4
6
8
12
150
200
300
400
10 11 12 13 14 15
0
20
40
80
60
100 Duty Cycle < 0.5%, VGE = 12 V
Pulse Duration = 250 s
TJ = 125°C
TJ = 25°C
TJ = 150°C
00.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0
20
40
80
60
100
0 0.8 1.2 1.6 2.0
0.4 2.4
Duty Cycle < 0.5%, VGE = 15 V
Pulse Duration = 250 s
TJ = 25°C
TJ = 150°C
TJ = 125°C, RG = 3 , L = 500 H, VCE = 390 V
TC / 75°C
VGE / 15 V
DIE CAPPABILITY TJ = 150°C, RG = 3 , VGE = 15 V, L = 100 H
VCE = 390 V, RG = 3 , TJ = 125°C
TJ = 125°C
HGTG20N60A4
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TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
Figure 8. Turn−Off Energy Loss vs. Collector
to Emitter Current
Figure 9. Turn−On Delay Time vs. Collector
to Emitter Current
Figure 10. Turn−On Rise Time vs. Collector
to Emitter Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
Figure 12. Fall Time vs. Collector to Emitter
Current
ICE, Collector to Emitter Current (A)
EON2, Turn−On Energy Loss (J)
ICE, Collector to Emitter Current (A)
EOFF
, Turn−Off Energy Loss (J)
td(ON)I, Turn−On Delay Time (ns)
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
td(OFF), Turn−Off Delay Time (ns)
ICE, Collector to Emitter Current (A)
tfI, Fall Time (ns) trI, Rise Time (ns)
1000
600
800
400
1200
015
200
5
1400
10 20 25 30 35 40
600
0
100
400
200
500
700
800
300
510 15 20 25 30 35 40
8
14
16
18
20
22
12
10
510 15 20 25 30 35 40
ICE, Collector to Emitter Current (A)
4
8
20
24
36
510 15 20 25 30 35 40
80
60
70
120
100
110
90
15
510 20 25 30 35 40 16
32
24
48
64
40
56
80
72
510 15 20 25 30 35 40
TJ = 25°C, VGE = 12 V, VGE = 15 V
32
28
16
12
RG = 3 , L = 500 H, VCE = 390 V
TJ = 125°C, VGE = 12 V, VGE = 15 V
RG = 3 , L = 500 H, VCE = 390 V
TJ = 125°C, VGE = 12 V or 15 V
TJ = 25°C, VGE = 12 V or 15 V
RG = 3 , L = 500 H, VCE = 390 V
TJ = 25°C, TJ = 125°C, VGE = 12 V
TJ = 25°C, TJ = 125°C, VGE = 15 V
RG = 3 , L = 500 H, VCE = 390 V
TJ = 25°C, TJ = 125°C, VGE = 12 V
TJ = 25°C or TJ = 125°C, VGE = 15 V
RG = 3 , L = 500 H, VCE = 390 V
VGE = 12 V, VGE = 15 V, TJ = 125°C
VGE = 12 V, VGE = 15 V, TJ = 25°C
RG = 3 , L = 500 H, VCE = 390 V
TJ = 125°C, VGE = 12 V or 15 V
TJ = 25°C, VGE = 12 V or 15 V
HGTG20N60A4
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6
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
Figure 13. Transfer Characteristic Figure 14. Gate Charge Waveforms
Figure 15. Total Switching Loss vs. Case
Temperature
Figure 16. Total Switching Loss vs. Gate
Resistance
Figure 17. Capacitance vs. Collector to Emitter
Voltage
Figure 18. Collector to Emitter On−State
Voltage vs. Gate to Emitter Voltage
VGE, Gate to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
QG, Gate Charge (nC)
VGE, Gate to Emitter Voltage (V)
TC, Case Temperature (°C)
ETOTAL, Total Switching Energy Loss (mJ)
RG, Gate Resistance ()
ETOTAL, Total Switching Energy Loss (mJ)
VCE, Collector to Emitter Voltage (V)
C, Capacitance (nF)
VGE, Gate to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
80
120
7
160
200
240
6
40
Duty Cycle < 0.5%, VCE = 10 V
Pulse Duration = 250 s
TJ = 25°C
TJ = 125°C
TJ = −55°C
8910 11 12
2
14
0
4
10
6
8
12
16
VCE = 400 V
020 406080 100 120 140 160
0.2
0.4
0.6
1.0
1.8
0.8
1.4
1.2
1.6
RG = 3 , L = 500 H, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
ICE = 30 A
ICE = 10 A
ICE = 20 A
025 50 75 100 125 150
0.1
1
1000
10
100
103
TJ = 125°C, L = 500 H, VCE = 390 V,
VGE = 15 V
ETOTAL = EON2 + EOFF
ICE = 10 A
ICE = 20 A
ICE = 30 A
0
1
3
4
5
2
COES
CIES
CRES
Frequency = 1 MHz
1.7
1.8
2.0
1.9
2.1
2.2
020
40 60 80 100
Duty Cycle < 0.5%, TJ = 25°C
Pulse Duration = 250 s,
ICE = 20 A
ICE = 30 A
ICE = 10 A
89
10 11 12 13 14 15 16
IG(REF) = 1 mA, RL = 15 , TJ = 25°C
VCE = 600 V
VCE = 200 V
HGTG20N60A4
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7
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
Figure 19. IGBT Normalized Transient Thermal Response, Junction to Case
Figure 20. Inductive Switching Test Circuit Figure 21. Switching Test Waveforms
t1, Rectangular Pulse Duration (s)
ZJC, Normalized Thermal Response
RG = 3
L = 500 H
+
−
VDD = 390 V
VGE
VCE
ICE
90%
10%
EON2
EOFF
90%
10%
td(OFF)I tfI
trI
td(ON)I
0.1
0.2
0.5
0.05
0.01
0.02
Single Pulse
10−2
10−1
100
10−510−410−310−210−1100
PD
t1
t2
Duty Factor, D = t1/t2
Peak TJ = (PD x ZJC x RJC) + TC
HGTG20N60A4D
DIODE TA49372
TEST CIRCUIT AND WAVEFORMS
HGTG20N60A4
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8
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications,
with virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the following
basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
or equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed
the gate−voltage rating of VGEM. Exceeding
the rated VGE can result in permanent damage
to the oxide layer in the gate region.
6. Gate Termination − The gates of these devices
are essentially capacitors. Circuits that leave
the gate open−circuited or floating should be
avoided. These conditions can result in turn−on
of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate
to emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of
a typical device shows fMAX1 or fMAX2; whichever is
smaller at each point. The information is based on
measurements of a typical device and is bounded by the
maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 21. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM.
fMAX2 is defined by fMAX2 = (PD − PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD=(T
JM −TC)/RJC. The sum of device switching
and conduction losses must not exceed PD. A 50% duty
factor was used (Figure 3) and the conduction losses (PC)
are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is
the integral of the instantaneous power loss (ICE x VCE)
during turn−off. All tail losses are included in the calculation
for EOFF; i.e., the collector current equals zero (ICE = 0).
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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