TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
TIP100, TIP101 and TIP102
●80 W at 25°C Case Temperature
●8 A Continuous Collector Current
●Maximum VCE(sat) of 2.5 V at IC = 8 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIP105
TIP106
TIP107
VCBO
-60
-80
-100
V
Collector-emitter voltage (IB = 0)
TIP105
TIP106
TIP107
VCEO
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-8 A
Peak collector current (see Note 1) ICM -15 A
Continuous base current IB-1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC210 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA
(see Note 5)
IB = 0
TIP105
TIP106
TIP107
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
VCE = -50 V
IB=0
IB=0
IB=0
TIP105
TIP106
TIP107
-50
-50
-50
µA
ICBO
Collector cut-off
current
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE=0
IE=0
IE=0
TIP105
TIP106
TIP107
-50
-50
-50
µA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -8 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
IC=-3A
IC=-8A (see Notes 5 and 6) 1000
200
20000
VCE(sat)
Collector-emitter
saturation voltage
IB = -6 mA
IB = -80 mA
IC=-3A
IC=-8A (see Notes 5 and 6) -2
-2.5 V
VBE
Base-emitter
voltage VCE = -4 V IC= -8 A (see Notes 5 and 6) -2.8 V
VEC
Parallel diode
forward voltage IE = -8 A IB= 0 (see Notes 5 and 6) -3.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.56 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
CθCThermal capacitance of case 0.9 J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
tdDelay time
IC = -8 A
VBE(off) = 5 V
IB(on) = -80 mA
RL = 5 Ω
IB(off) = 80 mA
tp = 20 µs, dc ≤ 2%
35 ns
trRise time 300 ns
tsStorage time 900 ns
tfFall time 1.3 µs
OBSOLETE
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS135AA
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -4 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
TCS135AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
TCS135AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·1
-1·0
-10
-100 SAS135AA
tp = 100 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 5 ms,
d = 0.1 = 10%
DC Operation
TIP105
TIP106
TIP107
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100 TIS130AA
OBSOLETE
