IRF6216 - International Rectifier

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IRF6216

SMPS MOSFET HEXFET® Power MOSFET

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.2

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.9 A

IDM Pulsed Drain Current -19

PD @TA = 25°C Power Dissipation2.5 W

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 7.8 V/ns

TJOperating Junction and -55 to + 150

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

Absolute Maximum Ratings

Notes  through  are on page 8

PD - 94297

SO-8

VDSS RDS(on) max ID

-150V 0.240ΩΩ

ΩΩ

Ω@VGS =-10V -2.2A

Symbol Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead ––– 20

RθJA Junction-to-Ambient ––– 50 °C/W

Thermal Resistance

lReset Switch for Active Clamp Reset

DC-DC converters

Benefits

Applications

lLow Gate to Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

Top View

8

1

2

3

45

6

7

D

DG

S

A

D

S

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Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 2.7 ––– ––– SV

DS = -50V, ID = -1.3A

QgTotal Gate Charge ––– 33 49 ID = -1.3A

Qgs Gate-to-Source Charge ––– 7.2 11 nC VDS = -120V

Qgd Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -10V,

td(on) Turn-On Delay Time ––– 18 ––– VDD = -75V

trRise Time ––– 15 ––– ID = -1.3A

td(off) Turn-Off Delay Time ––– 33 ––– RG = 6.5Ω

tfFall Time ––– 26 ––– VGS = -10V 

Ciss Input Capacitance ––– 1280 ––– VGS = 0V

Coss Output Capacitance ––– 220 ––– VDS = -25V

Crss Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz

Coss Output Capacitance ––– 1290 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 99 ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to -120V

Dynamic @ TJ = 25°C (unless otherwise specified)

ns

Parameter Typ. Max. Units

EAS Single Pulse Avalanche Energy––– 200 mJ

IAR Avalanche Current––– -4.0 A

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -1.3A, VGS = 0V 

trr Reverse Recovery Time ––– 80 120 nS TJ = 25°C, IF = -1.3A

Qrr Reverse RecoveryCharge ––– 310 460 nC di/dt = -100A/µs 

Diode Characteristics

-2.2

-19 A

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– VV

GS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA 

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.240 ΩVGS = -10V, ID = -1.3A 

VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250µA

––– ––– -25 µA VDS = -150V, VGS = 0V

––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 20V

IGSS

IDSS Drain-to-Source Leakage Current

S

D

G

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

0.01

0.1

1

10

100

0.1 1 10 100



20

µ

s PULSE WIDTH

T = 25 C

J°



TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-7.0V

0.1

1

10

100

0.1 1 10 100



20µs PULSE WIDTH

T = 150 C

J°



TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-V , Drain-to-Source Volta

g

e

(

V

)

-I , Drain-to-Source Current (A)

DS

D

-5.0V

0.1

1

10

100

5.0 5.5 6.0 6.5 7.0 7.5 8.0



V = -50V

20µs PULSE WIDTH

DS

-V , Gate-to-Source Volta

g

e

(

V

)

-I , Drain-to-Source Current (A)

GS

D



T = 150 C

J°



T = 25 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature

(

C

)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°



V =

I =

GS

D

-10V

-2.2A

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Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage Fig 8. Maximum Safe Operating Area

110 100 1000

-VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + Cgd, C

ds SHORTED

Crss

= C

gd

Coss

= C

ds + Cgd

0 5 10 15 20 25 30 35

0

2

4

6

8

10

12

Q , Total Gate Char

g

e

(

nC

)

-V , Gate-to-Source Voltage (V)

G

GS



I=

D-1.3A



V = -30V

DS

V = -75V

DS

V = -120V

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

SD



V = 0 V

GS



T = 25 C

J°



T = 150 C

J°

1 10 100 1000

-VDS , Drain-toSource Voltage (V)

0.1

1

10

100

-ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100 1000



Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A



P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

T , Case Temperature ( C)

-I , Drain Current (A)

°

C

D

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RGD.U.T.

+

-

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Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

0

100

200

300

400

500

Startin

g

T

j

, Junction Temperature

(

C

)

E , Single Pulse Avalanche Energy (mJ)

AS

°



ID

TOP

BOTTOM

-1.8A

-3.2A

-4.0A

4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0

-VGS, Gate -to -Source Voltage (V)

0.00

0.50

1.00

1.50

RDS(on), Drain-to -Source On Resistance ( Ω)

ID = -2.2A

VGS = -10V

0246810 12 14 16 18

0.19

0.20

0.21

0.22

0.23

RDS (on) , Drain-to-Source On Resistance (Ω)

D.U.T. V

DS

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

-VGS

Q

G

Q

GS

Q

GD

V

G

Charge

R

G

IAS

0.01

Ω

t

p

D.U.T

L

V

DS

VDD

DRIVER A

15V

-20V

tpV

(

BR

)

DSS

I

AS

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SO-8 Package Details

K x 45°

C

8X

L

8X

θ

H

0.2 5 ( .0 1 0 ) M A M

A

0.10 (.004)

B 8X

0 .25 ( .0 1 0 ) M C A S B S

- C -

6X

e

- B -

D

E

- A -

8 7 6 5

1 2 3 4

5

6

5

RECOMMENDED FOOTPRINT

0.72 (.028 )

8X

1.78 (.0 70)

8 X

6.46 ( .255 )

1.27 ( .050 )

3X

DIM INCHES MIL L IMETE RS

MIN MA X MIN MA X

A .0 53 2 .0 6 8 8 1 .35 1 .7 5

A 1 .0 04 0 .0 0 9 8 0 .10 0 .2 5

B .0 14 .0 1 8 0 .36 0 .4 6

C .0 0 7 5 .0 0 98 0 .1 9 0 .2 5

D .1 8 9 .1 9 6 4 .8 0 4 .9 8

E .1 50 .1 5 7 3 .81 3 .9 9

e .0 5 0 BA S IC 1 .2 7 B AS IC

e 1 .0 2 5 BA S IC 0.6 3 5 B AS IC

H .2 2 8 4 .2 4 40 5 .8 0 6 .2 0

K .0 11 .0 1 9 0 .28 0 .4 8

L 0 .1 6 .0 50 0 .41 1 .2 7

θ

0 ° 8 ° 0 ° 8°

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2 . CONTROL LING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4 . OUT LINE CONFORMS T O JEDEC OUT LINE M S - 0 12 AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOL D PROTRUSIONS NOT T O EX CEED 0 .2 5 (.00 6).

DIME NSIONS IS T HE L ENGTH OF L EAD FOR SOL DERING TO A SUBST RAT E..

5

6

A1

e1

θ

SO-8 Part Marking

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 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Starting TJ = 25°C, L = 25mH

RG = 25Ω, IAS = -4.0A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

33 0.00

(

12.992

)

MAX.

14.4 0

(

.566

)

12.4 0

(

.488

)

N O TES :

1. CO NT ROLL ING DIMEN SION : M ILLIME TER.

2. OU TLIN E C ONF O RM S T O EIA-48 1 & EIA-54 1.

FEED DIRECTION

TER MINAL NUMBER 1

12.3

(

.484

)

11.7

(

.461

)

8.1

(

.318

)

7.9

(

.312

)

NOTES:

1. CONT RO LLING DIM E NSIO N : MILLIM ETER.

2. ALL DIMENSIONS ARE SHO WN IN M ILLIME TERS

(

INCHES

)

.

3. OU TLIN E CONFORM S TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/02

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