C1 - 184 © 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
IXFK IXFN
VDSS TJ= 25°C to 150°C 500 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 500 V
VGS Continuous ±20 ±20 V
VGSM Transient ±30 ±30 V
ID25 TC= 25°C 44N50 44 44 A
48N50 48 48 A
IDM TC= 25°C, 44N50 176 176 A
pulse width limited by TJM 48N50 192 192 A
IAR TC= 25°C2424A
EAR TC= 25°C3030mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 520 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 - °C
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~
IISOL ≤ 1 mA t = 1 s - 3000 V~
MdMounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
lInternational standard packages
lMolding epoxies meet UL 94 V-0
flammability classification
lSOT-227B miniBLOC with aluminium
nitride isolation
lLow RDS (on) HDMOSTM process
lUnclamped Inductive Switching (UIS)
rated
lFast intrinsic rectifier
Applications
lDC-DC converters
lSynchronous rectification
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lTemperature and lighting controls
Advantages
lEasy to mount
lSpace savings
lHigh power density
VDSS ID25 RDS(on)
IXFK / IXFN 44 N50 500 V 44 A 0.12 Ω Ω
Ω Ω
Ω
IXFK / IXFN 48 N50 500 V 48 A 0.10 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 50 0 V
VGS(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 400 µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 44N50 0.12 Ω
48N50 0.10 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
93001I (07/00)
D
S
G
S
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
S
GD
TO-264 AA
(IXFK)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
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C1 - 185
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 2 2 4 2 S
Ciss 8400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 9 0 0 pF
Crss 280 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns
td(off) RG = 1 Ω (External), 1 00 ns
tf30 ns
Qg(on) 270 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 135 nC
RthJC TO-264 AA 0.25 K/W
RthCK TO-264 AA 0. 15 K/W
RthJC miniBLOC, SOT-227 B 0.24 K/W
RthCK miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 48 A
ISM Repetitive; pulse width limited by TJM 192 A
VSD IF = 100 A, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V TBD µC
IRM 20 A
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXFN / IXFK 44N50
IXFN / IXFK 48N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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C1 - 186 © 2000 IXYS All rights reserved
IXFN / IXFK 44N50
IXFN / IXFK 48N50
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 BVDSS
VGS(th)
TC - Degrees C
-50-250 255075100125150
I
D
- Amperes
0
10
20
30
40
50
60
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 102030405060708090100
R
DS(on)
- Normalized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VGS - Volts
012345678910
I
D
- Amp eres
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
0 5 10 15 20 25 30 35
I
D
- Amp eres
0
10
20
30
40
50
60
70
80
90
100
5V
6V
7V
VGS = 10V
VGS = 10V
VGS = 15V
ID = 24A
44N50
48N50
TJ = 25°C
TJ = 25°C
TJ = 25°C
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C1 - 187
© 2000 IXYS All rights reserved
IXFN / IXFK 44N50
IXFN / IXFK 48N50
Fig.10 Transient Thermal Impedance
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amp ere s
0
10
20
30
40
50
60
70
80
90
100
Time - Seconds
0.001 0.01 0.1 1
Thermal Response - K/W
0.01
0.1
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
Crss
Coss
Gate Charge - nCoulombs
0 50 100 150 200 250 300 350 400
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
Ciss
VDS = 250V
ID = 24A
IG = 10mA
f = 1 MHz
VDS = 25V
TJ = 125°C
TJ = 25°C
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
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