STDM110
for Pure Logic/MDL Pr oducts
0.25µm 2.5V CMOS Standard Cell Library
STDM110
0.25µm 2.5V CMOS Standard Cell Library
for Pure Logic/MDL Products
Data Book
1999 Samsung Electronics Co., Ltd.
All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
written consent of the publisher. Samsung assumes no responsibility for any errors resulting from the use of the
information contained herein, nor does it convey any license under the patent rights of Samsung or others.
Samsung reserves the right to make changes in its products or product specification to improve function or design
at any time, without notice.
SECandSTDM110aretrademarksofSamsungElectronicsCo.,Ltd. Verilog is a registered trademark of Cadence
Design Systems, Inc. Viewlogic is a registered trademark of Viewlogic Systems, Inc. Mentor is a registered
trademark or Mentor Graphics Co. Synopsys is a registered trademark of Synopsys, Inc.
Head Office
Samsung Electronics Co., Ltd
System LSI Business,
ASIC Division, ASIC Design Service Team
San #24, Nongseo-Ri,
Kiheung-Eup, Yongin-City,
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TEL 82-2-760-6500, 6501 (Hot Line)
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http://www.intl.samsungsemi.com
Printed in the Republic of Korea
Marketing Team
Samsung Electronics Co., Ltd
System LSI Business,
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ASIC Marketing Team
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Seoul, Korea
TEL 82-2-259-4988
FAX 82-2-259-2494
Samsung ASIC iii STDM110
Introduction
This databook contains information about STDM110 0.25µm 2.5V standard cell library for pure Logic/MDL
products developed by SEC (Samsung Electronics Corporation).
The “library” basically contains various kinds of internal and I/O cells and soft-macros which are used for
developing ASIC (Application Specific Integrated Circuit). It also includes a design kit helping designers to
work in a workstation platform, and all sorts of design environments needed for an automatic chip design.
There are six chapters in this databook:
Chapter 1 Introduction
Chapter 2 Electrical Characteristics
Chapter 3 Internal Macrocells
Chapter 4 Input/Output Cells
Chapter 5 Compiled Macrocells
Chapter 6 PLL
In this databook each cell is followed by its AC electrical characteristics, and these characteristic values are
almost equal when the corresponding cell is operated in a real chip.
The purpose of this databook is to prevent any misuse or misapplication of STDM110 cell library by providing
precise information about the cell list, electrical data, directions for use, and matters demanding special
attention.
If you want to get more information about DRAMs, Digital cores and Analog cores that are not included in this
databook, access the Samsung ASIC web site(http://www.intl.samsungsemi.com) or contact Head Office.
Samsung ASIC iv STDM110
Contents
1Introduction
1.1 Library Description................................................................................................................1-1
1.2 Features................................................................................................................................1-2
1.3 EDA Support .........................................................................................................................1-4
1.4 Product Family ......................................................................................................................1-4
1.4.1 Analog Core Cell.................................................................................................1-4
1.4.2 Internal Macrocells............................................................................................1-12
1.4.3 Compiled Macrocells...........................................................................................1-12
1.4.4 Input/Output Cells...............................................................................................1-14
1.5 Timings....................................................................................................................................1-16
1.6 Delay Model ............................................................................................................................1-22
1.7 Testability Design Methodology...............................................................................................1-24
1.8 Maximum Fanouts...................................................................................................................1-27
1.9 Packages Capability by Lead Count .......................................................................................1-34
1.10 Power Dissipation..................................................................................................................1-36
1.11 VDD/VSS Rules and Guidelines..............................................................................................1-39
1.12 Crystal Oscillator Considerations..........................................................................................1-45
2Electrical Characteristics
DC Electrical Characteristics.........................................................................................................2-1
3Internal Macrocells
Overview .......................................................................................................................................3-1
Summary Tables ...........................................................................................................................3-2
Logic Cells
AD2DH/AD2/AD2D2/AD2D4.........................................................................................................3-17
AD3DH/AD3/AD3D2/AD3D4.........................................................................................................3-19
AD4DH/AD4/AD4D2/AD4D4.........................................................................................................3-21
AD5/AD5D2/AD5D4......................................................................................................................3-24
ND2DH/ND2/ND2D2/ND2D4........................................................................................................3-27
ND3DH/ND3/ND3D2/ND3D4........................................................................................................3-29
ND4DH/ND4/ND4D2/ND4D2B/ND4D4.........................................................................................3-32
ND5/ND5D2/ND5D4......................................................................................................................3-35
ND6/ND6D2/ND6D4......................................................................................................................3-38
Samsung ASIC v STDM110
Contents
ND8/ND8D2/ND8D4......................................................................................................................3-42
NR2DH/NR2/NR2D2/NR2D2B/NR2D4/NR2A ..............................................................................3-46
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A ..............................................................................3-49
NR4DH/NR4/NR4D2/NR4D2B/NR4D4.........................................................................................3-53
NR5/NR5D2/NR5D4......................................................................................................................3-56
NR6/NR6D2/NR6D4......................................................................................................................3-60
NR8/NR8D2/NR8D4......................................................................................................................3-64
OR2DH/OR2/OR2D2/OR2D4 .......................................................................................................3-68
OR3DH/OR3/OR3D3/OR3D4 .......................................................................................................3-70
OR4DH/OR4/OR4D2/OR4D4 .......................................................................................................3-73
OR5/OR5D2/OR5D4.....................................................................................................................3-76
XN2/XN2D2/XN2D4......................................................................................................................3-80
XN3/XN3D2/XN3D4......................................................................................................................3-82
XO2/XO2D2/XO2D4 .....................................................................................................................3-84
XO3/XO3D2/XO3D4 .....................................................................................................................3-86
AO21DH/AO21/AO21D2/AO21D2B/AO21D4 ...............................................................................3-88
AO211DH/AO211/AO211D2/AO211D2B/AO211D4 .....................................................................3-91
AO2M110/AO2M110D2.................................................................................................................3-94
AO22DH/AO22/AO22D2/AO22D2B/AO22D4 ...............................................................................3-97
AO22DHA/AO22A/AO22D2A/AO22D4A.......................................................................................3-100
AO221/AO221D2/AO221D4..........................................................................................................3-103
AO222/AO222D2/AO222D2B/AO222D4.......................................................................................3-107
AO222A/AO222D2A/AO222D4A...................................................................................................3-112
AO2222/AO2222D2/AO2222D4....................................................................................................3-114
AO31DH/AO31/AO31D2/AO31D4.................................................................................................3-118
AO311/AO311D2/AO311D4..........................................................................................................3-121
AO3M110/AO3M110D2.................................................................................................................3-125
AO32/AO32D2/AO32D4................................................................................................................3-128
AO321/AO321D2/AO321D4..........................................................................................................3-132
AO322/AO322D2/AO322D4..........................................................................................................3-136
AO33/AO33D2/AO33D4................................................................................................................3-140
AO331/AO331D2/AO331D4..........................................................................................................3-144
AO332/AO332D2/AO332D4..........................................................................................................3-148
AO4M110/AO4M110D2.................................................................................................................3-152
OA21DH/OA21/OA21D2/OA21D2B/OA21D4 ...............................................................................3-155
OA211DH/OA211/OA211D2/OA211D2B/OA211D4 .....................................................................3-158
OA2M110/OA2M110D2 ................................................................................................................3-161
OA22DH/OA22/OA22D2/OA22D2B/OA22D4 ...............................................................................3-164
OA22DHA/OA22AOA22D2A/OA22D4A........................................................................................3-167
OA221/OA221D2/OA221D4..........................................................................................................3-170
OA222/OA222D2/OA222D2B/OA222D4.......................................................................................3-174
OA2222/OA2222D2/OA2222D4....................................................................................................3-179
OA31/OA31D2/OA31D4................................................................................................................3-183
STDM110 vi Samsung ASIC
Contents
OA311/OA311D2/OA311D4..........................................................................................................3-186
OA3M110/OA3M110D2 ................................................................................................................3-190
OA32/OA32D2/OA32D4................................................................................................................3-193
OA321/OA321D2/OA321D............................................................................................................3-197
OA322/OA322D2/OA322D4..........................................................................................................3-201
OA33/OA33D2/OA33D4................................................................................................................3-205
OA331/OA331D2/OA331D4..........................................................................................................3-209
OA332/OA332D2/OA332D4..........................................................................................................3-213
OA4M110/OA4M110D2 ................................................................................................................3-217
SCG1/SCG1D2.............................................................................................................................3-220
SCG2//SCG2D2............................................................................................................................3-223
SCG3/SCG3D2.............................................................................................................................3-225
SCG4/SCG4D2.............................................................................................................................3-228
SCG5/SCG5D2.............................................................................................................................3-231
SCG6/SCG6D2.............................................................................................................................3-234
SCG7/SCG7D2.............................................................................................................................3-236
SCG8/SCG8D2.............................................................................................................................3-239
SCG9/SCG9D2.............................................................................................................................3-241
SCG10/SCG10D2.........................................................................................................................3-243
SCG11/SCG11D2.........................................................................................................................3-245
SCG12/SCG12D2.........................................................................................................................3-248
SCG13/SCG13D2.........................................................................................................................3-250
SCG14/SCG14D2.........................................................................................................................3-252
SCG15/SCG15D2.........................................................................................................................3-254
SCG16/SCG16D2.........................................................................................................................3-256
SCG17/SCG17D2.........................................................................................................................3-258
SCG18/SCG18D2.........................................................................................................................3-160
SCG19/SCG19D2.........................................................................................................................3-263
SCG20/SCG20D2.........................................................................................................................3-265
SCG21/SCG21D2.........................................................................................................................3-267
SCG22/SCG22D2.........................................................................................................................3-269
DL1D2/DL1D4...............................................................................................................................3-271
DL2D2/DL2D4...............................................................................................................................3-272
DL3D2/DL3D4...............................................................................................................................3-273
DL4D2/DL4D4...............................................................................................................................3-274
DL5D2/DL5D4...............................................................................................................................3-275
DL10D2/DL10D4...........................................................................................................................3-276
IVDH/IV/IVD2/IVD3/IVD4/IVD6/IVD8/IVD16 .................................................................................3-277
IVCD(11/13)/IVCD(22/26)/IVCD44................................................................................................3-280
IVT/IVTD2/IVTD4/IVTD8/IVTD16..................................................................................................3-282
IVTN/IVTND2/IVTND4/IVTND8/IVTND16.....................................................................................3-284
NIDH/NID/NID2/NID3/NID4/NID6/NID8/NID16.............................................................................3-286
OAK_NID10P/OAK_NID 20P........................................................................................................3-289
Samsung ASIC vii STDM110
Contents
NIT/NITD2/NITD4/NITD8/NITD16.................................................................................................3-290
OAK_DUCLK10/OAK_DUCLK16..................................................................................................3-296
CTSB/CTSBD2/CTSBD3/CTSBD4/CTSBD6/
CTSBD8/CTSBD16.......................................................................................................................3-298
Flip-Flops
FD1/FD1D2...................................................................................................................................3-304
FD1CS/FD1CSD2.........................................................................................................................3-306
FD1S/FD1SD2 ..............................................................................................................................3-308
FD1SQ/FD1SQD2.........................................................................................................................3-310
FD1Q/FD1QD2..............................................................................................................................3-312
FD2/FD2D2...................................................................................................................................3-314
FD2CS/FD2CSD2.........................................................................................................................3-316
FD2S/FD2SD2 ..............................................................................................................................3-320
FD2SQ/FD2SQD2.........................................................................................................................3-322
FD2Q/FD2QD2..............................................................................................................................3-324
FD3/FD3D2...................................................................................................................................3-326
FD3CS/FD3CSD2.........................................................................................................................3-328
FD3S/FD3SD2 ..............................................................................................................................3-332
FD3SQ/FD3SQD2.........................................................................................................................3-334
FD3Q/FD3QD2..............................................................................................................................3-336
FD4/FD4D2...................................................................................................................................3-338
FD4CS/FD4CSD2.........................................................................................................................3-341
FD4S/FD4SD2 ..............................................................................................................................3-345
FD4SQ/FD4SQD2.........................................................................................................................3-349
FD4Q/FD4QD2..............................................................................................................................3-352
FD5/FD5D2...................................................................................................................................3-354
FD5S/FD5SD2 ..............................................................................................................................3-356
FD6/FD6D2...................................................................................................................................3-358
FD6S/FD6SD2 ..............................................................................................................................3-360
FD7/FD7D2...................................................................................................................................3-362
FD7S/FD7SD2 ..............................................................................................................................3-364
FD8/FD8D2...................................................................................................................................3-366
FD8S/FD8SD2 .............................................................................................................................3-369
FDS2/FDS2D2 ..............................................................................................................................3-373
FDS2CS/FDS2CSD2 ....................................................................................................................3-375
FDS2S/FDS2SD2..........................................................................................................................3-377
FDS3/FDS3D2 ..............................................................................................................................3-379
FDS3CS/FDS3CSD2 ....................................................................................................................3-381
FDS3S/FDS3SD2..........................................................................................................................3-383
FJ1/FJ1D2.....................................................................................................................................3-385
FJ1S/FJ1SD2................................................................................................................................3-387
FJ2/FJ2D2.....................................................................................................................................3-389
FJ2S/FJ2SD2................................................................................................................................3-391
STDM110 viii Samsung ASIC
Contents
FJ4/FJ4D2.....................................................................................................................................3-393
FJ4S/FJ4SD2................................................................................................................................3-396
FT2/FT2D2....................................................................................................................................3-399
Latches
LD1/LD1D2 ...................................................................................................................................3-402
LD1A/LD1D2A...............................................................................................................................3-404
LD1Q/LD1QD2..............................................................................................................................3-406
LD2/LD2D2 ...................................................................................................................................3-408
LD2Q/LD2QD2..............................................................................................................................3-411
LD3/LD3D2 ...................................................................................................................................3-413
LD4/LD4D2 ...................................................................................................................................3-416
LD5/LD5D2 ...................................................................................................................................3-419
LD5Q/LD5QD2..............................................................................................................................3-421
LD6/LD6D2 ...................................................................................................................................3-423
LD6Q/LD6QD2..............................................................................................................................3-426
LD7/LD7D2 ...................................................................................................................................3-428
LD8/LD8D2 ...................................................................................................................................3-431
LS0/LS0D2....................................................................................................................................3-434
LS1/LS1D2....................................................................................................................................3-436
Bus Holder
BUSHOLDER................................................................................................................................3-437
Internal Clock Drivers
CK(2/4/6/8)....................................................................................................................................3-438
Decoders
DC4...............................................................................................................................................3-441
DC4I..............................................................................................................................................3-443
DC8I..............................................................................................................................................3-445
Adders
FADH/FA/FAD2..............................................................................................................................3-450
HADH/HA/HAD2 ...........................................................................................................................3-453
SCG23/SCG23D2.........................................................................................................................3-456
Multiplexers
MX2DH/MX2/MX2D2/MX2D4 .......................................................................................................3-460
MX2X4 ..........................................................................................................................................3-463
MX2IDH/MX2I/MX2ID2/MX2ID4 ...................................................................................................3-466
MX2IDHA/MX2IA/MX2ID2A/MX2ID4A..........................................................................................3-469
MX2IX4 .........................................................................................................................................3-472
MX3I/MX3ID2/MX3ID4..................................................................................................................3-475
MX4/MX4D2/MX4D4.....................................................................................................................3-479
Samsung ASIC ix STDM110
Contents
MX8/MX8D2/MX8D4.....................................................................................................................3-483
4Input/Output Cells
Overview .......................................................................................................................................4-1
Summary Tables ...........................................................................................................................4-2
Input Buffers
PvIC/PvICD/PvICU........................................................................................................................4-8
PvIS/PvISD/PvISU ........................................................................................................................4-12
PvIT/PvITD/PvITU.........................................................................................................................4-16
Output Buffers
PvOByz .........................................................................................................................................4-20
PvODyz.........................................................................................................................................4-29
PvOTyz..........................................................................................................................................4-41
Bi-Directional Buffers
PvBaDyz/PvBaUDyz.....................................................................................................................4-59
PvBaTyz/PvBaDTyz/PvBaUTyz.....................................................................................................4-59
Oscillators
PHSOSC(K1/K2/M1/M2)...............................................................................................................4-61
PH2SOSC(K1/K2/M1/M2).............................................................................................................4-66
PSOSC(K1/K2/M1/M2)..................................................................................................................4-71
PCI Buffers
PTIPCI...........................................................................................................................................4-78
PTOPCI.........................................................................................................................................4-79
PTBPCI .........................................................................................................................................4-80
USB I/O Buffers
PBUSB/PBUSB1...........................................................................................................................4-83
PBUSBLS......................................................................................................................................4-84
PBUSB_FS....................................................................................................................................4-85
Power Pads
VDD2(I/P/O/IP/OP/T)/VDD3(P/O/OP)...........................................................................................4-92
VSS2(I/P/O/IP/OP/T)/VSS3(P/O/OP)............................................................................................4-92
Analog Interface
VDD2I_ABB/VDD2OP_ABB/VDD2T_ABB....................................................................................4-92
VSS2I_ABB/VSS2OP_ABB/VSS2T_ABB.....................................................................................4-92
VBB_ABB/VSSBB_ABB................................................................................................................4-92
PIC_ABB.......................................................................................................................................4-94
STDM110 x Samsung ASIC
Contents
PICC_ABB ....................................................................................................................................4-95
PICEN_ABB..................................................................................................................................4-96
POT1/2/4/8/_ABB..........................................................................................................................4-97
ESD Slot Cells
EV1I/EV2P/EV2O/EV2OP/EV3P/EV3O/EV3OP...........................................................................4-100
EV1I_ABB/EV2OP_ABB...............................................................................................................4-100
Common Slot Cells
EC0C0/EC0C0D/EC0CA0/EC0CA0D/EC0C0_BB/EC0C0D_BB/EC0C0_VBB/EC0C0D_VBB
......................................................................................................................................................4-101
5Compiled Macrocells
Overview .......................................................................................................................................5-1
Compiled Memory Naming Convention.........................................................................................5-1
Characteristics for Timing and Power............................................................................................5-2
Built-In Self Test and Built-In Redundancy-Analysis .....................................................................5-4
Compiled Memory Selection Guide...............................................................................................5-5
Low-Power Compiled Memory
SPSRAM_LP ................................................................................................................................5-7
DPSRAM_LP ...............................................................................................................................5-17
SPARAM_LP.................................................................................................................................5-27
DROM ...........................................................................................................................................5-37
MROM...........................................................................................................................................5-45
Overview to Compiled Datapath
Overview to Compiled Datapath....................................................................................................5-53
Compiled Macrocell Selection Guide ............................................................................................5-54
ADDER..........................................................................................................................................5-55
BS .................................................................................................................................................5-66
MPY ..............................................................................................................................................5-78
6PLL
PLL2013X .....................................................................................................................................6-1
NOTE
1
Introduction
Table of Contents
1.1 Library Description ......................................................................................... 1-1
1.2 Features ......................................................................................................... 1-2
1.3 EDA Support .................................................................................................. 1-4
1.4 Product Family................................................................................................ 1-4
1.4.1 Analog Core Cells............................................................................. 1-4
1.4.2 Internal Macrocells............................................................................ 1-12
1.4.3 Compiled Macrocells......................................................................... 1-12
1.4.4 Input/Output Cells ............................................................................. 1-14
1.5 Timings........................................................................................................... 1-16
1.6 Delay Model.................................................................................................... 1-22
1.7 Testability Design Methodology...................................................................... 1-24
1.8 Maximum Fanouts.......................................................................................... 1-27
1.9 Packages Capability by Lead Count............................................................... 1-34
1.10 Power Dissipation........................................................................................... 1-37
1.11 VDD/VSS Rules and Guidelines........................................................................ 1-40
1.12 Crystal Oscillator Considerations................................................................... 1-46
Introduction 1.1 Library Description
Samsung ASIC 1-1 STDM110
1.1
Library
Description
Samsung ASIC offers STDM110 as 0.25um CMOS standard cell library.
Samsung's 0.25um cell-based logic process providing up to 5 layers of
interconnectmetalwithvariousI/Opad-pitchoptionssuchas70umpitchpadand
80um pitch pad.
STDM110whichreducedpowerdissipation and system cost by merging the logic
and IPs as a whole and connecting internally from logic to memory data bus is
ideal for high-performance products such as graphics controller, projector,
portable CD and so on.
STDM110 can support up to eight million gate counts of logic providing 75% of
usable gate. Logic density is 2.1 times greater than that of MDL90. The power
consumption of compiled memory is 90% smaller than MDL90.
STDM110 also supports fully user-configurable compiled memory and datapath
elements. Each element is provided as a compiler. Two different types of
compiled memories in STDM110 are available to support memories suitable to
high-density and low-power applications.
To support mixed voltage environments, 2.5V, 3.3V drive and 5V-tolerant IO cells
are available. LVTTL, LVCMOS, PCI, OSC, AGP, PECL, HSTL, LVDS and USB
buffers are supported. To better support a system-on-chip design style, various
core cells are available including processor cores like ARM7TDMI/ARM9TDMI/
ARM920T/ARM940T from ARM, Teaklite from DSPG.
The STDM110 supports data transmission and communication core such as
USB, IEEE1284 and UART.
The list of analog core cells includes ADC, DAC, CODEC, LVDS, RAMDAC and
PLL with various bits and frequency ranges.
Samsungdesign methodologyoffersan comprehensivetimingdriven designflow
including automated time budgeting, tight floorplan synthesis intergration,
powerful timing analysis and timing driven layout. Its advanced characterization
flow provides accurate timing data and robust delay models for a 0.25um very
deep-submicron technology. Advanced verification methods like static timing
analysis and formal verification provide an effective verification methodology with
a variety of simulators and cycle based simulation. Samsung DFT methodology
supports scan design, BIST and JTAG boundary scan. Samsung provides a full
set of test-ready IPs with an efficient core test integration methodology.
1.2 Features Introduction
STDM110 1-2 Samsung ASIC
1.2
Features • 1.8V standard cell library including processor and analog cores
• 0.25um five layer metal(from four layer metal option) CMOS technology
- Logic, processor and analog
• High basic cell usages
- Up to 8 million gates
- Maximum usage: 75% for five layer metal
• High speed
- Typical 2-input NAND gate delay (ND2D4): 112ps (F/O=2 + WL (0.02pF))
• Operation temperature (TA)
- Commercial range: 0°C to +70°C
- Industrial range: −40°C to +85°C
• Digital cores usages
- Hard-macro: ARM7TDMI, ARM9TDMI, ARM920T, ARM940T, Teaklite
- Soft-macro: AMBA, DMA Controller, SDRAM Controller, Interrupt Controller,
IIC, WDT, RTC, USB, IrDA, UART(16C450, 16C550),
Fast Ethernet MAC, P1394a LINK, RS Decoder, Viterbi
Decoder
• Analog cores usages
- Ultra low voltage analog core (2.5V and 1.8V) available
- Analog core supply voltage:
2.5V analog core: 2.5V ± 5%
1.8V analog core: 1.8V ± 5%
- ADC: 8bit (30M, 2.5V), 10bit ((30M, 100M, 2.5V), (250K, 20M, 1.8V)),
12bit (200K, 20M, 2.5V)
- DAC: 8bit (2M, 2.5V), 10bit ((300M, 2.5V), (2M, 1.8V)),
12bit ((2M, 2.5V), (80M, 1.8V))
- CODEC: 8bit (8K~11K), 16bit (44.1K)
- PLL: 25M ~ 300M (FSPLL, 2.5V), 1G (PLL, 1.8V),
20M ~ 170M(FSPLL, 1.8V)
- Others: 300M (RAMDAC+PLL)
• Fully user-configurable Static RAMs and ROMs
- High-density and low-power memory available
- Duty-free cycle in synchronous memory available
- 2-bank architecture available
- Flexible aspect ratio available
- Up to 256K-bit single-port SRAM available.
- Up to 128K-bit dual-port SRAM available.
- Up to 512K-bit diffusion and metal-2 ROM available.
- Up to 16K-bit multi-port register file available.
- Up to 32K-bit FIFO available.
• Fully configurable datapath macrocells
- 4 ~ 64 bit adder available
- 4 ~ 64 bit barrel shifter available
- 6 ~ 64 bit multiplier with 1-stage pipeline available
- Various output driver strength available
- A tightly integrate apollo, Avant!, design environment
• I/O cells
- 2.5V/3.3V and 5V tolerant IO
- 3-level (high, medium, no) slew rate control
- 1/2/4/6/8/10/12mA available for 3.3V and 2.5V output buffers
- 1/2/3mA available for 5V-tolerant output buffers
Introduction 1.2 Features
Samsung ASIC 1-3 STDM110
• IO IP available
- PCI ((33MHz, 66MHz, 3.3V), (33MHz, 3.3/5V tolerant))
- USB (full speed/low speed)
- SSTL2 (DDR SDRAM interface, up to 200MHz)
- AGP (AGP2.0 Compliant, 66MHz@1X,133MHz@2X, 266MHz@4X)
- PECL (2.5V interface, up to 400MHz)
- HSTL (class1, class2, 30MHz)
- LVDS (3.3V(2.5V optional) interface, 300MHz)
• Various package options
- QFP, thin QFP, power QFP, plastic BGA, super BGA, plastic leaded chip
carrier, etc.
• Fully integrated CAD software and EDA support
- Logic synthesis: Synopsys Design Compiler
- Logic simulation: Cadence Verilog-XL, Cadence NC-Verilog,
Viewlogic ViewSim, Mentor ModelSim-VHDL,
Mentor ModelSim-Verilog, Synopsys VSS,
Synopsys VCS
- Scan insertion and ATPG: Synopsys TestGen, Synopsys Test Compiler,
Mentor Fastscan
- Static timing analysis: Synopsys PrimeTime, Synopsys MOTIVE
- RC analysis: Avant! Star-RC
- Power analysis: Synopsys DesignPower, CubicPower (ln-House Tool)
- Formal verification: Synopsys Formality, Chrysalis Design VERIFYer,
Verplex Tuxedo-LEC
- Fault simulation: Cadence Verifault, SuperTest (In-House Tool)
- Delay calculator: CubicDelay (In-House Tool)
• STDM110 contains 12 user selectable clock tree cells(CTC). At the pre-layout
design stage, these will be used as the cells which represent actual clock tree
informatin of P&R. The key features of new Samsung ASIC CTS flow are as
follows:
- 12 user selectable clock tree cells(CTC) for STDM110
- Good pre-layout and post-layout correlation
- No customer netlist modification
- Accurate post-layout back-annotation mechanism
- Insertion delay, skew, transition time management
- Clock tree information file generation
- Cover 100 to 30,000 fanouts and up to 1M gate count for CTS spanning
block (GCCSB)
- Tightly coupled with Samsung in-house delay calculator, CubicDelay Gated
CTS support
- Hierarchical/Flatten verilog, edif interface for P&R
For more detail information for CTC flow, refer to “CTC flow guideline for
CubicDelay” included in Samsung ASIC design kit.
1.3 EDA Support Introduction
STDM110 1-4 Samsung ASIC
1.3
EDA Support Samsung ASIC provides an efficient solution for multi-million gate ASICs in very
deep submicron (VDSM) technology. For large system-on-chip (SOC) type
designs, static verification methodology (static timing analysis and formal
verification) will shorten your design cycle time, which in turn will lessen today's
ever-increasing time-to-market pressure. Our Design-for-Test (DFT)
methodology and service take you through all phases of test insertion, test
pattern generation and fault grading to get high test coverage.
STDM110 supports a rich collection of industry-standard EDA tools from
Cadence, Synopsys, Mentor graphics, and Avant! on multiple design platforms
such as Solaris and HP. Customers are allowed to choose among the industry-
leading EDA tools from design capture, synthesis, simulation, and DFT to layout.
Several powerful proprietary software tools are seamlessly integrated in our
design kits to improve your product quality.
For high simulation accuracy, STDM110 uses a proprietary delay calculator. Cell
delayis calculated basedona matrix ofdelayparameters for each macrocell,and
signal interconnect delay is calculated based on the RC tree analysis.
1.4
Product Family STDM110 library include the following design elements:
■Analog core cells
■Digital core cells
■Internal macrocells
■Compiled macrocells
■Input/Output cells.
1.4.1 ANALOG CORE CELLS
Introduction to Analog Cores
Samsung ASIC is one of the leading suppliers of cell based mixed analog and
digital designs. As a leading supplier of mixed analog and digital designs,
Samsung ASIC has more analog design experience than any other vendors.
Analog has been and will continue to be a part of the strategic focus at Samsung
ASIC. Analog design is a part of the total Samsung ASIC integrated design
system. Workstation symbols are supplied for analog cells and are entered as
part of the design by the customer or design center. Samsung ASIC uses
basically the same automatic layout and verification tools for analog cells as for
digital cells. Analog designs are processed on the same production line as digital
designs.
Samsung's analog core family comprises ADC,DAC,PLL and sigma-delta ADC/
DAC, and their brief functional descriptions are introduced below.
[data sheets for all analog cores available]
Analog-to-Digital Converters
Analog-to-digital converters provide the link between the analog world and digital
systems. Due to their extensive use of analog and mixed analog-digital
operations, A/D converters often appear as the bottleneck in data processing
applications, limiting the overall speed or precision.
AnA/D converter produces a digitaloutput,D, as a function oftheanalog input, A:
D = f(A)
While the input can assume an infinite number of values, the output can be
selected from only a finite set of codes given by the converter's output word
length(i.e, resolution). Thus, the ADC must approximate each input level with one
Introduction 1.4 Product Family
Samsung ASIC 1-5 STDM110
of these codes, this process is so called 'quantization'.
In a digital system the amplitude is quantized into discrete steps, and at the same
time the signal is sampled at discrete time intervals. This time interval is called
sampling time or sampling frequency. After sampling and quantization process,
the analog signal(A) becomes digital output (D).
Digital-to-Analog Converters
The D/A converters are the digital-to-analog conversion circuits, which are also
called DACs. They can be considered as decoding devices that accept digitally
coded signals and provide analog output in the form of currents or voltages. In
this manner, they provide an interface between the digital signal of the computer
systems and continuous signals of analog world. They are employed in a variety
ofapplications, fromCRTdisplay systemsand voice sythesizersto automatic test
systems,digital controlled attenuators, and process controlactuators.In addition,
they are key components inside most A/D converters.
Figure1 shows thefunctionalblock diagram ofabasic D/A converter system.The
input to the D/A converter is a digital word, made up a stream of binary bits
comprised of 1's and 0's. The output analog quantity A, which can be a voltage or
current, is related to the input as
whereKis a scale factor, VREF is a reference voltage, n is the total number ofbits,
and b1,b2,...,bn are the bit coefficients, which are quntized to be a 1 or a 0.
As a function of the input binary word which determines the bit coefficients, the
output exhibits 2ndiscrete voltage level ranging from zero to a maximum value of
with a minimum step change ∆Vo given as \
Figure 1-1. Functional Block Diagram of Basic D/A Converter
AKV
REF b1
21
------ b2
22
------ …bn
2n
------+++=
Vo(max) VREF2n1–
2n
-------------
=
∆Vo VREF
2n
-------------
=
D/A
Converter
b1
b2
b3
bn
Analog Output
Digital
Data
Input
1.4 Product Family Introduction
STDM110 1-6 Samsung ASIC
Sigma-Delta ADC/DAC
VLSI offers high speed and high density, but reduced accuracy for analog
components and reduced signal range (reduced dynamic range). Hence, an
exchange of digital complexity and of resolution in time for resolution in signal
amplitude is needed. So good solution is over-sampling data converter.
Oversampling sigma-delta converter is used in slow speed (audio band)
application because of process limit. It's noise shaping (sigma-delta) feature
make high resolution about max. SND=90~100dB
In ADC path, analog single input is converted to differential signal with anti-
aliasing filtering through anti-aliasing filter block. And sigma-delta modulator con-
verts the signal into oversampled noise-shaping 1bit PDM (Pulse Density Modu-
lation). Following digital decimation filter reject the out of band noise and outputs
16bits high resolution digital data with down sampled to Fs rate. In DAC path, dig-
ital input data is oversampled by interpolation filter and it is converted to noise-
shaped 1bit PDM through digital sigma-delta modulator. Analog SC-post-filter re-
jects the out of band noise. And anti-image filter rejects sampling images and out-
puts single analog signal with high resolution.
Phase Locked Loop
Samsung’s PLL cores implemented as an analog function provide frequency
multiplication capabilities and enable system designers to synchronize ASIC
chip-level clock networks with a common reference signal.
In the past, designers wishing to incorporate a PLL into a digital design
environment had only two options:
(1) A special mixed-signal process to incorporate analog functions onto the chip
(2) An all digital PLL that can be incorporated into a standard digital process.
However, a mixed-signal process is too expensive to be a feasible solution. On
the other hand digital PLLs typically require huge silicon area and exhibits poor
locking time despite their high accuracy.
Differing from the previous solutions, Samsung's PLL cores can be implemented
on standard digital CMOS process while functioning as an analog PLL.
Samsung's PLL cores:
* Require only a few off-chip passive components for the whole function
* Remove the need for an expensive mixed-signal process
* Provide faster locking time than all digital PLLs
* Present low jitter characteristics
Glossary by Core Families
1. Digital-to-Analog Converter
1. Resolution -An n-bit binary converter should be able to provide 2ndistinct and
different analog output values corresponding to the set of n-bit binary words. A
converter that satisfies this criterion is said to have resolution of n bits. The
smallestoutput changethat can beresolved byalinear DACis 2-n of thefull-scale
span.
2.Accuracy -Error ofa D/Aconverter isthe differencebetween theactualanalog
output and the output that is expected when a given digital code is applied to the
converter. Source of error include gain error, offset error, linearity errors and
noise. Error is usually commensurate with resolution, less than 2-(n+1), or 1/2 LSB
of full scale.
Introduction 1.4 Product Family
Samsung ASIC 1-7 STDM110
Figure 1-2. Error of D/A Converter
3. LSB (Least-Significant Bit) - In a system in which a numerical magnitude is
representedby aseries ofbinarydigits, theLSB isthatbit thatcarries thesmallest
value or weight. It represents the smallest analog change that can be resolved
by an n-bit converter.
LSB (Analog Value) = FSR/2n
FSR = Full-Scale Range, n = number of bits
4. MSB (Most-Significant Bit) - The binary digit with the largest numerical
weighting. Normally, the MSB of a digital word has a weighting of 1/2 the full
range.
5. Compliance-Voltage Range - For a current output DAC, the maximum range
of(output) terminal voltage for which the device will provide the specified current-
output characteristics.
6. Glitch - A glitch is a switching transient appearing in the output during a code
transition.Its value is expressed as a product of voltage(V*ns)orcurrent (mA*ns)
and time duration or charge transferred.
7. Harmonic Distortion (and Total Harmonic Distortion) - The DAC is driven
by the digitized representation of sine wave. The ratio of the RMS sum of the
harmonics of the DAC output to the fundamental value is the THD. Usually only
the lower order harmonics are included, such as second through fifth.
V1: RMS amplitude of the fundamental
8. Signal-to-Noise Ratio (SNR) - This signal to noise ratio depends on the
resolution of the converter and automatically includes specifications of linearity,
distortion, sampling time uncertainty, glitches, noise, and settling time. Over half
the sampling frequency, this signal to noise ratio must be specified and should
ideally follows the theoretical formula;
S/Nmax = 6.02N + 1.76dB
9. Slew Rate - Slew rate of a device or circuit is a limitation in the rate of change
of output voltage, usually imposed by some basic circuit consideration such as
limited current to charge of capacitor. Amplifiers with slew rate of a few V/µs are
common and moderate in cost. Slew rates greater than about 75 V/µs are usually
seen only in more sophisticated (and expensive) devices The output slewing
speed of a voltage-output D/A converter is usually limited by the slew rate of the
amplifier used at its output (if one is used).
Offset Error
Ideal
Actual
Analog
Output
Digital Input
Analog
Output
Digital Input
Ideal
Actual
Gain Error
THD 20 V22V32V42V52
+++()
12⁄
V1
---------------------------------------------------------------
log=
1.4 Product Family Introduction
STDM110 1-8 Samsung ASIC
10. Settling Time - The time required, following a prescribed data change from
the 50% point of the login input change, for the output of a DAC to reach and to
remain within a given fraction (usually ±1/2lsb) of the final value. Typical pre-
scribed changes are full scale, 1MSB and 1LSB at a major carry. Settling time of
current-output DACs is quite fast. The major share of settling time of a voltage-
outputDACis usually contributed by the settling time of the output op-amp circuit.
Figure 1-3. Setting Time
11. Power-Supply Sensitivity -The sensitivity of a converter to changes in the
power-supply voltages is normally expressed in terms of percent-of-full-scale
change in analog output value (of fractions of 1LSB) for a 1% dc change in the
power supply. Power supply sensitivity may also expressed in relation to a
specified dc shift of supply voltage. A converter may be considered "good" if the
change in reading at full scale does not exceed 1/2LSB for 3% change in power
supply. Even better specs are necessary for converters designed for battery
operation.
12. ILE (integral Linearity Error) - Linearity error of a converter, expressed in %,
ppm of full-scale range or multiples of 1LSB, is a deviation of the analog values
in a plot of the measured conversion relationship from a straight line. The straight
line can be either a "best straight line" determined empirically by manipulation of
the gain and/or offset to equalize maximum positive and negative deviation of the
actual transfer characteristics from this straight line; or it can be a straight line
passing through the endpoints of the transfer characteristic endpoints of the
transfer characteristic after they have been calibrated (sometimes referred to as
"endpoint" linearity). Endpoint linearity error is similar to relative accuracy error.
For multiplying D/A converters, the analog linearity error, at a specified digital
code, is defined in the same way as for multipliers, by deviation from a "best
straight line" through the plot of the analog output-input response.
13. DLE (Differential Linearity Error) - Any two adjacent digital codes should re-
sult in measured output values that are exactly 1LSB apart (2-n of full scale for an
n-bit converter). Any deviation of the measured "step" from the ideal difference is
called differential linearity error expressed in multiplies of 1LSB. It is an important
specification because a differential linearity error greater than 1LSB can lead to
non-monotonic response in a D/A converter and missed codes in an A/D convert-
er.
14. Monotonic - A DAC is said to be monotonic if the output either increases or
remains constant as the digital input increases with the result that the output will
always be a single-valued function of the input. The specification "monotonic"
Final Setting
V0
+∆V0
1
Slewing
Setting Time to ∆V0
−∆V0
Slew Rate
Introduction 1.4 Product Family
Samsung ASIC 1-9 STDM110
(over a given temperature range) is sometimes substituted for a differential
nonlinearity specification since differential nonlinearity less than 1LSB is a suffi-
cient condition for monotonic behaviour.
2. Analog-to-Digital Converter
1. ILE (Integral Linearity Error: INL) -Integral nonlinearity refersto the deviation
of each individual code from a line drawn from "zero" through "full scale". The
point used as "zero" occurs 1/2LSB before the first code transition. "Full scale" is
defined as a level 1 1/2LSB beyond the last code transition. The deviation is
measured from the center of each particular code to the true straight line.
2. DLE (Differential Linearity Error: DNL) - An ideal ADC exhibits code
transitions that are exactly 1LSB apart. DNL is the deviation from this ideal value.
It is often specified in terms of the resolution for which no missing codes are
guaranteed.
3. Offset Error - The first transition should occur at a level 1/2LSB above "zero".
Offset is defined as the deviation of the actual first code transition from that point.
4. Gain Error - The first code transition should occur for an analog value 1/2LSB
above nominal negative full scale. The last transition should occur for an analog
value 1 1/2LSB below the nominal positive full scale. Gain error is the deviation
of the actual difference between first and last code transitions and the ideal
difference between the first and last code transitions.
5. Pipeline Delay (Latency) - The number of clock cycles between conversion
initiation and the associated output data being made available. New output data
is provided every clock cycle.
6. Effective Number of Bits (ENOB) - This is a measure of a device's dynamic
performance and may be obtained from the SNDR or from a sine wave curve test
fit according to the following expression:
ENOB = SNDR - 1.76/6.02
ENOB = N-log2[RMS error (actual) / RMS error (ideal)]
7. Analog Bandwidth - The analog input frequency at which the spectral power
of the fundamental frequency, as determined by FFT analysis is reduced by 3dB.
8. Aperture Delay - The delay between the sampling clock and the instant the
analog input signal is sampled.
9. Aperture Jitter - The sample to sample variation in aperture delay.
10. Bit Error Rate (BER) - The number of spurious code errors produced for any
given input sine wave frequency at a given clock frequency. In this case it is the
number of codes occurring outside the histogram cusp for a 1/2 FS sine wave.
11. Signal to Noise Ratio - This signal to noise ratio depends on the resolution
of the converter and automatically includes specifications of linearity, distortion,
sampling time uncertainty, glitches, noise, and settling time. Over half the
samplingfrequency,thissignaltonoiseratiomustbespecifiedandshouldideally
follow the theoretical formula;
S/Nmax = 6.02N + 1.76dB
1.4 Product Family Introduction
STDM110 1-10 Samsung ASIC
3. Phase Locked Loop
1. Lock Time - The time it takes the PLL to lock onto the system clock. Fast or
slow lock time may be controlled by the loop filter characteristics. The loop filter
characteristics are controlled by varying the R and C components. (Remember
that R and C define the damping-factor as well)
2. Phase Error -The phase differencebetweenthe feedback clocksignaland the
system signal clock.
3. Clock Jitter - The deviations in a clock's output transitions from their ideal
positions define the clock jitter. Jitter is sometimes specified as an absolute value
in nanoseconds. All jitter measurement are made at a specified voltage.
1) Cycle-to-Cycle Jitter: The change in a clock's output transition from its
corresponding position in the previous cycle. This kind of jitter is the most difficult
to measure and usually requires a time-interval analyzer
Figure 1-4. Cycle-to-Cycle Jitter
: The maximum of such values over multiple cycles (J1,J2...) is the max. cycle-to-
cycle jitter.
2) Period Jitter: Period jitter measures the maximum change in a clock's output
transition from its ideal position. You can use period-jitter measurements to
calculate timing margins in systems.
Figure 1-5. Period Jitter
3) Long-term Jitter: Long-term jitter measures the maximum change in a clock's
output transition from its ideal position over many cycles. How many cycles
depends on the application and the frequency. A classic example of system
affected by long-term jitter is a graphics card driving a CRT
4) Power Down Mode: PLL state in which the quiescent current is lowered to a
very low level to conserve power.
5) Synthesize clock: a system clock may run at a relatively low rate compared to
system components. A CPU, for example, may require an internal clock that is
several times faster than the system I/O bus clock. Designers can use PLL
Clock
t1 t2 t3
Noise: jitter J1 = t2−t1
jitter J2 = t3−t2
Clock
ideal cycle: t1
Jitter
Introduction 1.4 Product Family
Samsung ASIC 1-11 STDM110
technologytosynthesizea higher frequency on-chip clock using the system clock
as a reference.
6) Deskew clock: Multiple chips on a printed circuit board or cores of different
sizes within a single system on a chip experience clock skew. By using PLL or
DLL technology to shift the phase of the reference clock within each chip or core,
designers can minimize skew tune a system to perform up its potential.
7) Duty Ratio: the percentage of the period that the output is in a high state.
8) Output frequency range: The maximum output frequency range minus the
minimum output frequency that is produced with an input signal for which the cell
specifications still apply.
Customer Service
Samsung provides a full custom support for our customers need of analog cores.
Samsung's worldwide sales offices and representatives give our customers a
first-hand support for analog cores. And if needed, Samsung engineers are pre-
pared to provide a fully customized total solution to satisfy our customers.
Technical Support
If our customers want to develop mixed-signal products, Samsung provides all
technical support to meet customers needs. Mixed-signal design is quite different
from pure logic design in terms of circuit design, techniques, layout and test meth-
odology. Thus Samsung provides a successful technical guide and firmly support
for all development steps.
Definition of Analog Core Data Sheet Types
Each product developed by Samsung will be supported by technical literature
where the data sheets progress through the following levels of refinement
1. Core Preview
Describes the main features and specifications for core that is under
development. Some specifications such as exact pin-outs may not be finalized at
time of publication.The purpose of this document is to provide customers with
advance product planning information.
2. Preliminary Datasheet
This is the first document completely describing a new core. It contains an
features, application, timing diagram, theory of operation, core pin information,
test guide, layout guide and AC/DC electrical information. This data sheet are
based on prototype silicon performance and on worst case simulation
models.The purpose of this data sheet is to provide ASIC customer with technical
information sufficiently detailed to guarantee that they can safely begin active
development.
3.Final Data sheet
Thisis anupdated version ofpreliminary data sheetreflecting actualperformance
of the final silicon. Updates include tighter specifications, more min. and max.
values. The purpose of this data sheet is to communicate the confirmed
performance of cores which have passed qualification, been fully characterized.
1.4 Product Family Introduction
STDM110 1-12 Samsung ASIC
1.4.2 INTERNAL MACROCELLS
Internal Macrocells are the lowest level of logic functions such as NAND, NOR
and flip-flop used for logic designs. There are about 471 different types of
internal macrocells. They usually come in four levels of drive strength (0.5X, 1X,
2X and 4X).
These macrocells have many levels of representations—logic symbol, logic
model, timing model, transistor schematic, HSPICE netlist, physical layout, and
placement and routing model.
1.4.3 COMPILED MACROCELLS
Compiled macrocells of STDM110 consist of compiled memory and compiled
datapath macrocells.
1.4.3.1 Compiled Memory Macrocells
Memories in STDM110 are fully user-configurable and are provided as a
compiler. Two different types of memories are available in STDM110. One is
suitable for high-density application with high-performance, called STDM110-HD
compiled memory. The other is suitable for low-power application, called
STDM110-LP compiled memory.
In STDM110-HD compiled memory, eight types of memories are available such
as single-port synchronous/asynchronous static RAM, dual-port synchronous
static RAM, synchronous diffusion/metal-programmable ROM, multi-port
asynchronous register file and synchronous first-in first-out memory.
Synchronous memories have a fully synchronous operation at the rising-edge of
clockand the duty-free cycle is available.Also,the bit-write capability is available.
Asynchronous memories have a synchronous operation for a write enable signal
during write mode and have an asynchronous operation for address signal during
read mode. Multi-port asynchronous register file supports four kinds of
configurations such as 2 port(1-read/1-write), 3 port(1-read/2-write and 2-read/1-
write) and 4 port (2-read/2-write). The first-in first-out memory which is widely
used in communication buffering types of applications has also fully synchronous
operation at the rising- edge of clock.
Onthe otherhand, inSTDM110-LP compiledmemory, fivetypesof memoriesare
available such as single-port synchronous/asynchronous static RAM, dual-port
synchronous static RAM and synchronous diffusion/metal-programmable ROM.
Synchronousmemoriesarealmostsame as that of STDM110-HD except that the
duty-free cycle is not available. Asynchronous memory is same as that of
STDM110-HD.
To dramatically reduce the power consumption in STDM110-LP, some of low-
power techniques such as a partial activation architecture in cell array and a
divided word-line structure was adopted, rather than STDM110-HD.
Basically in STDM110-HD and STDM110-LP, the power-down mode which
significantly reduces the power dissipated during a read or write mode is
provided. Also compiled memories have a standby mode except multi-port
asynchronous register file and first-in first-out memory. While in standby mode,
the data stored in the memory is retained, data outputs remain stable and the
power is greatly reduced because memory operation is internally blocked while
the memory contents and the data outputs are unaffected.
Introduction 1.4 Product Family
Samsung ASIC 1-13 STDM110
To improve the memory performance and to reduce the power consumption, 2-
bank architecture is provided except some memories such as dual-port
synchronousstatic RAM,multi- portasynchronous registerfileand first-infirst-out
memory. In 2-bank architecture, only one bank is activated and the other bank is
in standby mode.
To support various memory shapes which are determined by the floorplan of a
chip design, flexible memory aspect ratios are provided. For certain specific
memory configuration, all types of timing, power and area values are provided by
an automatic datasheet generator.
To easily do interface to layout, the physical abstract data for Silicon Ensemble
and Apollo, called phantom cell or black box, is provided. BIST(Built-In Self-Test)
circuitry is currently available for most of STDM110 compiled memories. BIST
circuits are designed to detect a set of fault types that impact the functionality of
memory and is generated by a softmacro-based BIST generator.
The softmacro-based BIST generator generates both an individual BIST netlist
for each memory and a shared BIST netlist for all memories used in a design.
However, when several memories of the same or the different type area used in
the design, if you generate the individual BIST netlist for each memory, there are
some redundant blocks because the individual BIST netlist has same function. In
thiscase,itwouldbetter usethe sharedBIST netlistto eliminatesuch redundancy
and reduce area.
1.4.3.2 Compiled Datapath Macrocells
Compileddatapath macro cellsincludeAdder, Barrel ShifterandMultiplier. Adder
performs the adding or adding/subtracting operation on the control of a mode
selection signal. Barrel Shifter makes input data shift or rotate in the left/right
direction. In the shift operation, the vacant bit can be padded with zero, MSB
value, or external data. Multiplier performs the 2's compliment multiplication. One
pipeline stage insertion is available to get a high operating frequency.
They have two output drive strengths, which are equal to the 1X and 2X-Drive in
the primitive cell library. The hard macro cells are built through the Apollo,
placement and routing tool from Avant!. All the leaf cells have the same physical
configuration compatible with the primitive cell library. It allows that any primitive
cell can be used as a bit slice cell in the datapath module design.
Weprovidetwokindsofengineeringdesignservices.Oneistosupportadditional
compiled datapath macrocells such as ALUs, Comparators, Priority encoders,
Incrementers and Decrementers, and so on. Another is to make hardwired
datapath module design which provides a regular structured layout.
1.4 Product Family Introduction
STDM110 1-14 Samsung ASIC
1.4.4 INPUT/OUTPUT CELLS
There are about seven hundreds different I/O buffers. Each I/O cell is
implemented solely on the basic I/O cell architecture which forms the periphery
of a chip.
A test logic is provided to enable the efficient parametric (threshold voltage)
testing on input buffers including LVCMOS and TTL level converters, Schmitt
trigger input buffers, clock drivers and oscillator buffers. Pull-up and pull-down
resistors are optional features.
Three basic types of output buffers (non-inverting, tri-state and open drain) are
available in a range of driving capabilities from 1mA to 12mA for 2.5V, 3.3V drive
and from 1mA to 3mA for 5.0V tolerant drive. One or two levels of slew rate
controls are provided for each buffer type (except 1mA, 2mA and 3mA buffers) to
reduce output power/ground noise and signal ringing, especially in simultaneous
switching outputs.
Bi-directional buffers are combinations of input buffers and output buffers (tri-
state and open drain) in a single unit. The I/O structure has been fully
characterized for ESD protection and latch-up resistance.
For user's convenience, STDM110 library provides 100KΩpull-down and pull-up
resistance respectively.
1.4.4.1 I/O Applications
To support mixed voltage environments, LVTTL, LVCMOS and Schmitt trigger I/
O cells are available at 2.5V, 3.3V interface and 5V tolerant interface. The I/O
application diagram is as follows.
Figure 1-6. I/O Applications
1.4.4.2 I/O Cell Drives Options
To provide designers with the greater flexibility, each I/O buffer can be selected
among various current levels (e.g., 1mA, 2mA,..., 12mA). The choice of current-
level for I/O buffers affects their propagation delay and current noise.
The slew rate control helps decrease the system noise and output signal
overshoot/undershootcaused by the switching of output buffers. The outputedge
rate can be slowed down by selecting the high slew rate control cells.
2.5V
B
T
D
3.3V
B
T
D
2.5
3.3
2.5V
C
S
3.3V
C
S
T
Internal Circuit
operating
voltage: 1.8V
2.5
3.3/
Input Buffer Output Buffer
5V
tolerant
Introduction 1.4 Product Family
Samsung ASIC 1-15 STDM110
STDM110 provides three different sets of output slew rate controls. Only one I/O
slot is required for any slew rate control options.
1.4.4.3 5V Tolerant I/O Buffers
STDM110 I/O library is based on a process which has the most optimum
performance in 1.8V.
Inthis process, voltage more than 3.6V are not allowed at the gate oxide because
of a reliability problem. And a special circuit is adopted in order to make pin
voltage tolerable up to 5.25V and to offer TTL interface driving up to 3mA.
Obviously, this circuit is constructed not to permit more than 3.6V at the gate
oxide. The external circuit diagram is as follows.
The maximum external tolerance of this buffer is 5.25V. It can be used as a 3.3V
normal buffer.
Figure 1-7. 5V Tolerant I/O Buffers
1.4.4.4 PCI Buffers
PCI buffers are designed for PCI local bus application which is an industry-
standard, high-performance 32bit or 64bit bus architecture. Samsung ASIC
offers input, output, bi-directional PCI buffers for 33MHz and 66MHz operation.
These buffers are compliant with PCI local bus specification 2.1.
1.4.4.5 USB (Universal Serial Bus) Buffers
Various kinds of peripheral equipment such as mouse, joy stick, keyboard,
modem, scanner and printer improve the power of a computer. However, it is not
easy to connect and use them properly in the computer.
USB specification established late in 1995 is a good solution for this problem,
providing facile method of an expansion. Samsung ASIC offers full speed and
low speed USB buffers that complies with Universal Serial Bus specification 1.0,
1.1.
1.4.4.6 Other Buffers
Samsung ASIC can support various kinds of buffers such as HSTL, SSTL, AGP,
PECL, LVDS, and so on. For more information please contact us.
3.3V 3.3V 5.0V
Output voltage
Open drain output
5V tolerant input
Tri-state output
Bi-directional I/O
0.25µm 2.5V process Normal 5V process
3.3V
TTL Input
TTL Input
1.5 Timings Introduction
STDM110 1-16 Samsung ASIC
1.5
Timings 1.5.1 WIRE LENGTH LOAD
Table 1-1. shows the equivalent standard load matrix for 4-layer and 5-layer
metal interconnect. The equivalent standard load values are function of gate
count and fanout. These values are based on capacitive loading and are used in
wire length estimates which affect propagation delay.
Table 1-1. Equivalent Standard loads for 4-layer and 5-layer Metal Interconnect
Gates
Count Fanouts
12345678163264
4LM
5000 1.159 2.242 3.822 5.113 5.965 7.020 7.859 10.94 28.672 45.642 79.821
10000 1.530 2.932 5.561 7.701 8.964 10.500 12.110 15.211 29.903 47.725 83.520
50000 4.192 8.247 12.439 16.494 16.801 17.980 21.026 22.806 35.536 48.347 84.605
100000 4.596 9.327 13.925 18.523 18.889 20.241 23.582 27.031 41.002 54.253 94.944
150000 12.843 17.125 21.406 22.684 23.600 24.296 26.001 29.730 39.828 63.672 127.344
200000 13.520 18.026 22.533 23.885 24.849 25.582 27.372 31.299 41.865 66.931 133.812
300000 14.871 19.830 24.786 26.588 27.596 28.363 30.317 34.634 46.268 73.871 147.587
400000 16.225 21.631 26.852 28.693 29.845 30.718 32.868 37.479 50.016 79.707 159.207
500000 18.099 24.132 30.166 32.177 33.435 34.390 36.777 42.032 53.235 84.861 169.459
600000 19.375 25.836 32.476 34.593 35.915 36.919 39.467 45.186 54.763 87.312 174.320
800000 22.324 29.767 37.739 40.113 41.593 42.719 45.642 52.399 59.180 94.390 188.385
1000000 25.078 33.439 42.657 45.272 46.898 48.140 51.408 59.135 63.283 100.964 201.447
1500000 32.631 43.509 56.047 59.341 61.381 62.946 67.174 77.514 75.639 120.743 240.788
2000000 39.706 52.941 68.596 72.524 74.956 76.821 81.946 94.736 87.196 139.244 277.587
2500000 46.327 61.770 80.342 84.864 87.657 89.807 95.771 110.853 97.994 156.527 311.959
3000000 52.517 70.023 91.321 96.399 99.532 101.946 108.693 125.919 108.065 172.646 344.022
4000000 60.251 80.335 104.770 110.594 114.189 116.958 124.701 144.463 123.979 198.073 394.685
5000000 67.558 90.078 117.479 124.008 128.041 131.146 139.827 161.985 139.017 222.099 442.560
6000000 75.754 101.005 131.728 139.052 143.573 147.053 156.788 181.634 155.879 249.038 496.241
5LM
5000 1.101 2.131 3.631 4.856 5.667 6.669 7.466 10.397 27.238 43.360 75.830
10000 1.454 2.786 5.283 7.317 8.515 9.976 11.505 14.451 28.408 45.339 79.344
50000 3.982 7.834 11.818 15.670 15.961 17.081 19.976 21.666 33.760 45.929 80.374
100000 4.366 8.861 13.229 17.597 17.944 19.229 22.403 25.679 38.952 51.540 90.198
150000 12.201 16.268 20.336 21.549 22.420 23.081 24.701 28.244 37.837 60.488 120.977
200000 12.843 17.125 21.406 22.691 23.606 24.304 26.004 29.734 39.771 63.584 127.122
300000 14.128 18.839 23.546 25.259 26.216 26.944 28.801 32.903 43.955 70.178 140.207
400000 15.414 20.549 25.509 27.257 28.353 29.181 31.225 35.606 47.515 75.722 151.247
500000 17.195 22.925 28.658 30.567 31.763 32.670 34.938 39.931 50.573 80.618 160.986
600000 18.406 24.543 30.852 32.862 34.119 35.073 37.494 42.926 52.025 82.947 165.605
800000 21.208 28.278 35.852 38.107 39.514 40.584 43.360 49.779 56.220 89.670 178.967
1000000 23.825 31.767 40.524 43.008 44.554 45.733 48.837 56.178 60.119 95.916 191.374
1500000 31.000 41.333 53.245 56.374 58.312 59.798 63.815 73.637 71.856 114.706 228.749
2000000 37.721 50.295 65.166 68.898 71.208 72.980 77.849 90.000 82.837 132.281 263.707
2500000 44.011 58.682 76.324 80.621 83.274 85.317 90.983 105.311 93.093 148.700 296.362
3000000 49.891 66.523 86.755 91.579 94.555 96.849 103.257 119.622 102.661 164.014 326.821
4000000 57.239 76.318 99.532 105.065 108.479 111.110 118.466 137.239 117.779 188.169 374.950
5000000 64.180 85.575 111.606 117.807 121.639 124.588 132.836 153.885 132.067 210.995 420.432
6000000 71.965 95.955 125.141 132.099 136.394 139.700 148.949 172.552 148.084 236.587 471.429
7000000 78.436 104.582 136.393 143.976 148.655 152.259 162.339 188.067 161.397 257.858 513.812
8000000 87.950 117.266 152.935 161.439 166.687 170.727 182.031 210.877 180.976 289.134 576.135
Introduction 1.5 Timings
Samsung ASIC 1-17 STDM110
1.5.2 TIMING PARAMETERS
This section discusses issues involving timing parameters.
1.5.2.1 Transition Time
Figure 1-8. shows the definition of rise transition time (tR) and fall transition time
(tF). Transition time is defined as the delay between the time when the input (out-
put) signal voltage level is 10% of supply voltage (VDD) and the time of the input
(output) signal voltage level is 90% of VDD.
Figure 1-8. Rise and Fall Transition Time
1.5.2.2 Propagation Delay
Figure 1-9. shows the definition of propagation delays. Propagation delay is de-
fined as the delay between the time when the input signal voltage level is 50% of
supply voltage (VDD) and the time when the output signal voltage level is 50% of
VDD.
Figure 1-9. Propagation Delay
tRtF
10%
90% 90%
10%
VDD
50%
50%
tPLH
50%
50%
tPLH
50%
50%
tPHL
50%
50%
tPHL
VDD
In
Out
In
In
Out
Out
In
Out
1.5 Timings Introduction
STDM110 1-18 Samsung ASIC
1.5.2.3 Setup / Hold Time
Figure 1-10. shows the definition of setup time and hold time. The setup timing
check is defined as the minimum interval which a data signal must remain stable
before active transition of a clock. Any change to the data signal within this inter-
val results in a timing violation.
Theholdtimingcheck isdefined asthe minimumintervalwhichadata signalmust
remain stable after active transition of a clock. Any change to the data signal with-
in this interval results in a timing violation.
Figure 1-10. Setup and Hold Time
1.5.2.4 Recovery Time
Figure 1-11. shows the definition of recovery time. A recovery timing check meas-
ures the time between the release of an asynchronous control signal from the ac-
tive state to the next active clock edge.
For example, the time between RN and the CK of FD2 cell. If the active edge of
the CK occurs too soon after the release of the RN, the state of the FD2 becomes
uncertain. The state can be the value set by the RN or the value clocked into the
FD2 from the data input.
Figure 1-11. Recovery Time
D
CK
tSU tHD
50%
50%
50%
RN
CK tRC
50%
50%
Introduction 1.5 Timings
Samsung ASIC 1-19 STDM110
1.5.2.5 Removal Time
Figure 1-12. shows the definition of removal time. A removal timing check meas-
ures the time between the active clock edge and the release of an asynchronous
control signal from the active state.
For example, the time between RN and the CK of FD2 cell. If the release of the
RN occurs too soon after the active edge of the clock, the state of the FD2 be-
comes uncertain. The uncertainty can be caused by the value set by the RN or
the value clocked into the FD2 from the data input.
Figure 1-12. Removal Time
1.5.2.6 Minimum Pulse Width
Figure 1-13. shows the definition of minimum pulse width. The minimum pulse
width timing check is the minimum allowable time for the positive (high) or nega-
tive (low) phase of each cycle.
Figure 1-13. Minimum Pulse Width
1.5.2.7 Minimum Period
Figure 1-14. shows the definition of minimum period. The minimum period timing
check is the minimum allowable time for one complete cycle of the signal.
Figure 1-14. Minimum Period
RN
CK tRM
50%
50%
CK
tPWH
50%
tPWL
CK 50%
tPRD
1.5 Timings Introduction
STDM110 1-20 Samsung ASIC
1.5.3 TEMPERATURE AND SUPPLY VOLTAGE
The next figure describes propagation delay derating factors (KT, KV) as a
function of on-chip junction temperature (TJ) and supply voltage (VDD). As a
result of power dissipation, the junction temperature is generally higher than the
ambient temperature.
The temperature of the die inside the package (junction temperature, TJ) is
calculated using chip power dissipation and the thermal resistance to the
ambient temperature (θJA) of the package. Information on package thermal
performance can be obtained from Samsung application engineers.
Figure 1-15. Effect of Temperature and Supply Voltage on Propagation
Delay
Temperature (TJ)
K T
1.079
1.060
1.000
0.966
0.909
–40 0 7025 85
1.129
125 (°C)
Supply Voltage (VDD)
1.113
0.914
1.65 1.80 (Volt)
KV
1.000
1.95
Introduction 1.5 Timings
Samsung ASIC 1-21 STDM110
1.5.4 BEST AND WORST CASE CONDITIONS
A circuit should be designed to operate properly within a given specification
level, either commercial or industrial. It is recommended that circuits be
simulated for best case, normal case, and worst case conditions at each
specification level.
The following expressions also allow for the effect of process variation on circuit
performance.
Best case(Worst case):
TBC (TWC) = KP x KT x KV x TNOM
where
TBC = Best case propagation delay
TWC = Worst case propagation delay
TNOM = Normal propagation delay
(TJ = 25oC, VDD = 1.85V and typical process)
KP
,KT,KV= Refer toTable 1-2., Table 1-3., and Table 1-4.
1.5.5 DERATING FACTORS OF STDM110
The multipliers can be applied to nominal delay data in order to estimate the
effects of supply voltage, temperature and process. Nominal data are provided
for conditions of VDD = 1.8V, TJ = 25°C and typical process.
The derating factors of STDM110 is as follows.
Table 1-2. STDM110 Cell Process Derating Factor (KP)
Table 1-3. STDM110 Cell Temperature Derating Factor (KT)
Table 1-4. STDM110 Cell Voltage Derating Factor (KV)
Process Factor (KP)Slow Typ Fast
1.252 1.0 0.809
Temp. (oC) 125 85 70 25 0 –40
KT1.129 1.079 1.060 1.000 0.966 0.909
Voltage (V) 1.65 1.80 1.95
KV1.113 1.000 0.914
1.6 Delay Model Introduction
STDM110 1-22 Samsung ASIC
1.6
Delay Model The ASIC timing characteristics consist of the following components:
• Cell propagation delay from input to output transitions based on input
waveform slope, fanout loads and distributed interconnection wire resistance
and capacitance.
• Interconnection wire delay across the metal lines.
• Timing requirement parameters such as setup time, hold time, recovery
time, skew time, minimum pulse width, etc.
• Derating factors for junction temperature, power supply voltage, and
process variations.
Timing model for STDM110 focuses on how to characterize cell propagation
delay time accurately. To accomplish this goal, 2-dimensional table look-up delay
model has been adopted. The index variables of this table are input waveform
slope and output load capacitance. See the figure below. Samsung ASIC design
automation system supports an n-dimensional table model even though we
adopted 2-dimensional model for our 0.25µm cell-based products.
Figure 1-16. 2-Dimensional Table Delay Model
Propagation
Delay [ns]
Input Waveform
Slope [ns]
Load
Cap [pF]
1.5
1.0
0.5
1.0 2.03.0 0.4 0.8 1.2
Introduction 1.6 Delay Model
Samsung ASIC 1-23 STDM110
The Table 1-5. shows an example of this model for 2-input NAND cell. The data
in this table are high-to-low transition delay times from one of the two input pins
to output pin. The number of points and values of the index variables can differ
for each cell.
Table 1-5. Table Delay Model Example
Notice that 5-by-6 table is used. Delay values between grid points and beyond
this table are determined by linear interpolation and extrapolation methods. This
general table delay model provides great flexibility as well as high accuracy since
extensive software revisions are not required when a cell library is updated. The
other timing components such as interconnection wire delay, timing requirement
parameters and derating factors are characterized in a commonly-accepted way
in industry.
The figure below summarizes the features of Samsung ASIC’s delay model.
➀2-dimensional table delay model for output loading and input waveform
slope effects is used.The slopes (tR, tF) and delay times (tPLH, tPHL) of
all cell instances are calculated recursively.
➁The input waveform slope of each primary input pad and the loading
capacitance of each primary output pad can be assigned individually or by
default.
➂Pin to pin delays of cells and interconnection wires are supported.
➃The effect of distributed interconnection wire resistance and capacitance on
cell delay is analysed using the effective capacitance concept.
Figure 1-17. Features of Delay Model
SLOP \ CAP 0.0060 0.0260 0.0480 0.0920 0.1590 0.2480
0.0260 0.05808 0.12103 0.18966 0.32676 0.53545 0.81256
0.2730 0.09949 0.17367 0.24202 0.37902 0.58771 0.86485
0.4780 0.11632 0.20817 0.28627 0.42265 0.63065 0.90741
0.8870 0.13823 0.25166 1.35082 0.51127 0.71886 0.99418
1.5000 0.15769 0.29517 1.41346 0.60959 0.85193 1.12790
S1
S3
S2
CO1
CO2
CO3
CK
QD
A_Y
B_Y
➀
➁
➃
➃
➂
➁
➁
1.7 Testability Design Methodology Introduction
STDM110 1-24 Samsung ASIC
1.7
Testability
Design
Methodology
1.7.1 SCAN DESIGN
• Multiplexed scan flip-flop that minimizes the area or delay overhead needed
to implement scan design.
• Automated design rules checking, scan insertion, and test pattern
generation
• High fault coverage on synchronous designs
1.7.2 BOUNDARY-SCAN
• IEEE Std 1149.1
• JTAG boundary-scan registers with primitive cells
• Boundary-Scan Description Language (BSDL) description for board testing
• Combination with internal scan design and core testing
Boundary Scan Architecture
A boundary scan architecture contains TAP (Test Access Port), TAP controller,
instruction register and a group of test data registers. The instruction and test
data registers are separate shift-register-based paths connected in parallel with
a common serial data input and a common serial data output which are
connected to TAP, TDI and TDO signals. TAP controller selects the alternative
instruction and test data register paths between TDI and TDO. The schematic
view of the top level design of the test logic architecture is shown in the Figure 1-
18.
Figure 1-18. JTAG Test Access Port (TAP) Block Diagram
Multiplexer
Scannable
Register
Device Identity
Register
Bypass
Register
Instruction
Register
TAP
Controller
SYSTEM
LOGIC
Boundary Scan Path
TDI
TMS
TCK
TDO
TEST
ACCESS
PORT
(TAP)
Mux
Introduction 1.7 Testability Design Methodology
Samsung ASIC 1-25 STDM110
Boundary Scan Functional Block Descriptions
TAP (Test Access Port)
TAP is a general-purpose port that can provide with an access to many test
support functions built into a component, including the test logic. It includes three
inputs(TCK; Test ClockSignal,TMS; Test Mode Signaland TDI; Test DataInput)
and one output (TDO; Test Data Output) required by the test logic. An optional
fourth input (TRSTN; Test Reset) is provided for the asynchronous initialization
of the test logic. The values applied at TMS and TDI pins are sampled on the
rising edge of TCK, and the value placed on TDO pin changes on the falling edge
of TCK.
TAP Controller
TAP controller receives TCK, interprets the signals on TMS, and generates clock
and control signals for both instruction and test data registers and for other parts
of the test circuitries as required.
Instruction Register/Instruction Decoder
Test instructions are shifted into and held by the instruction register. Test
instructions include a selection of tests to be performed or the test data register
to be accessed. A basic 3-bit instruction register and its instruction decoder are
provided as macrofunctions in the library.
Test Data Registers
Data registers include a bypass register, a boundary scan register, a device
identification register and other design specific registers. Only the bypass- and
boundary scan registers are mandatory; the rest are optional.
Bypass register: The bypass register provides a single-bit serial connection through
the circuit when none of the other test data registers is selected. It
can be used to allow test data to flow through a given device to the
other components in a product without affecting a normal operation.
Boundary scan register: The boundary scan register detects typical production defects in
board interconnects, such as opens, shorts, etc. It also allows an
access to component inputs and outputs when you test their logic or
sample flow-through signals. Special boundary scan register
macrocells are provided for this purpose. These special registers is
discussed in the next section of next pages.
Design-specific test data register: These optional registers may be provided to allow an access to
design-specific test support features in the integrated circuit, such as
self-test, scan test.
Device identification register: This is an optional test data register that allows the manufacturer part
number and variant of a components to be identified. The 32-bit
identification register is partitioned into four fields:
Device version identifier1st field The first four bits beginning from MSB
Device part number 2nd field 16 bits
Manufacturer’s JEDEC number 3rd field 11 bits
LSB 4th field 1 bit —tied in High
1.7 Testability Design Methodology Introduction
STDM110 1-26 Samsung ASIC
The ASIC designer is free to fill the version and part number in any manner as
long as the total twenty bits are used.
Samsung’s JEDEC code: 78 decimal = 1001110
Continuation field (4 bits) = 0000
Contents of device identification register:
XXXX XXXXXXXXXXXXXXXX 0000 1001110 1
Users can define these two fields.
1.7.3 BIST (BUILT-IN SELF-TEST)
• Efficient test solution for compiled memory macrocells
• At speed and parallel testing of multiple memories
• Less routing overhead and test pin requirements
Instruction
Register
TAP
Controller
Bypass
Register
MUX
Circuit Prior
to Boundary Scan
(Core Logic)
Boundary Scan Register
(connection of all
boundary scan cells)
Boundary
Scan Path I/O Pad
TDI
TMS
TCK
TDO
Test Access Port (TAP)
Test Data
Register
Introduction 1.8 Maximum Fanouts
Samsung ASIC 1-27 STDM110
1.8
Maximum Fanouts 1.8.1 INTERNAL MACROCELLS
The maximum fanouts for STDM110
primitive cells are as follows. Note
that these fanout limitation values
are calculated when the rise and fall
times of the input signal is 0.273ns.
Depending on the rise and fall times,
the maximum fanout limitations can
be varied case by case.
In the following table the maximum
fanout values for all pins of
STDM110 internal macrocells are
listed.
Table 1-6. Maximum Fanouts
of Internal Macrocells
(When input tR/tF = 0.273ns, one
fanout (SL) = 0.006380pF)
Cell
Name Output
Pin Maximum
Fanout
ad2 Y 37
ad2d2 Y 76
ad2d4 Y 149
ad2dh Y 16
ad3 Y 37
ad3d2 Y 74
ad3d4 Y 146
ad3dh Y 16
ad4 Y 37
ad4d2 Y 72
ad4d4 Y 142
ad4dh Y 16
ad5 Y 17
ad5d2 Y 35
ad5d4 Y 150
ao21 Y 17
ao211 Y 10
ao2111 Y 6
ao2111d2 Y 77
ao211d2 Y 20
ao211d2b Y 76
ao211d4 Y 154
ao211dh Y 5
ao21d2 Y 34
ao21d2b Y 75
ao21d4 Y 151
ao21dh Y 8
ao22 Y 16
ao221 Y 9
ao221d2 Y 75
ao221d4 Y 151
ao222 Y 9
ao2222 Y 5
ao2222d2 Y 75
ao2222d4 Y 151
ao222a Y 14
ao222d2 Y 18
ao222d2a Y 75
ao222d2b Y 75
ao222d4 Y 151
ao222d4a Y 151
ao22a Y 16
ao22d2 Y 32
ao22d2a Y 32
ao22d2b Y 76
ao22d4 Y 150
ao22d4a Y 150
ao22dh Y 7
ao22dha Y 7
ao31 Y 15
ao311 Y 9
ao3111 Y 5
ao3111d2 Y 77
ao311d2 Y 76
ao311d4 Y 151
ao31d2 Y 32
ao31d4 Y 152
ao31dh Y 6
ao32 Y 15
ao321 Y 8
ao321d2 Y 75
ao321d4 Y 151
ao322 Y 7
ao322d2 Y 75
ao322d4 Y 151
ao32d2 Y 76
ao32d4 Y 150
ao33 Y 14
ao331 Y 7
ao331d2 Y 75
ao331d4 Y 151
ao332 Y 7
ao332d2 Y 75
ao332d4 Y 151
ao33d2 Y 74
ao33d4 Y 150
ao4111 Y 5
ao4111d2 Y 75
busholder Y 10000
dc4 Y0 37
Y1 37
Y2 37
Y3 36
dc4i YN0 33
YN1 33
YN2 33
YN3 34
dc8i YN0 23
YN1 23
YN2 23
YN3 23
YN4 23
YN5 23
YN6 23
YN7 23
dl1d2 Y 76
dl1d4 Y 154
dl2d2 Y 76
dl2d4 Y 154
dl3d2 Y 76
dl3d4 Y 154
dl4d2 Y 76
dl4d4 Y 154
dl5d2 Y 76
dl5d4 Y 154
dl10d2 Y 76
Cell
Name Output
Pin Maximum
Fanout
1.8 Maximum Fanouts Introduction
STDM110 1-28 Samsung ASIC
dl10d4 Y 154
oak_duclk
10 CK 381
CKB 381
oak_duclk
16 CK 382
CKB 382
fa S 36
CO 36
fad2 S 74
CO 74
fadh S 15
CO 15
fd1 Q 37
QN 37
fd1d2 Q 75
QN 75
fd1cs Q 37
QN 36
fd1csd2 Q 75
QN 74
fd1q Q 37
fd1qd2 Q 75
fd1s Q 37
QN 37
fd1sd2 Q 76
QN 75
fd1sq Q 36
fd1sqd2 Q 75
fd2 Q 37
QN 37
fd2d2 Q 74
QN 74
fd2cs Q 37
QN 36
fd2csd2 Q 76
QN 71
fd2q Q 37
fd2qd2 Q 75
fd2s Q 36
QN 37
fd2sd2 Q 74
QN 74
fd2sq Q 37
fd2sqd2 Q 75
fd3 Q 37
QN 37
fd3d2 Q 75
QN 75
fd3cs Q 37
QN 37
fd3csd2 Q 75
QN 73
fd3q Q 37
fd3qd2 Q 75
fd3s Q 37
QN 37
fd3sd2 Q 75
QN 74
fd3sq Q 37
fd3sqd2 Q 75
fd4 Q 36
QN 37
fd4d2 Q 74
QN 73
fd4cs Q 35
QN 33
Cell
Name Output
Pin Maximum
Fanout fd4csd2 Q 75
QN 68
fd4q Q 37
fd4qd2 Q 74
fd4s Q 37
QN 36
fd4sd2 Q 74
QN 72
fd4sq Q 36
fd4sqd2 Q 74
fd5 Q 37
QN 36
fd5d2 Q 75
QN 75
fd5s Q 37
QN 36
fd5sd2 Q 76
QN 75
fd6 Q 37
QN 37
fd6d2 Q 74
QN 74
fd6s Q 36
QN 37
fd6sd2 Q 74
QN 74
fd7 Q 37
QN 37
fd7d2 Q 75
QN 74
fd7s Q 37
QN 37
fd7sd2 Q 75
QN 74
fd8 Q 37
QN 36
fd8d2 Q 74
QN 73
fd8s Q 37
QN 37
fd8sd2 Q 74
QN 72
fds2 Q 37
QN 36
fds2d2 Q 75
QN 75
fds2cs Q 37
QN 36
fds2csd2 Q 75
QN 74
fds2s Q 37
QN 37
fds2sd2 Q 75
QN 75
fds3 Q 37
QN 37
fds3d2 Q 75
QN 75
fds3cs Q 37
QN 37
fds3csd2 Q 75
QN 75
fds3s Q 36
QN 37
Cell
Name Output
Pin Maximum
Fanout
Introduction 1.8 Maximum Fanouts
Samsung ASIC 1-29 STDM110
fds3sd2 Q 75
QN 75
fj1 Q 36
QN 37
fj1d2 Q 75
QN 75
fj1s Q 36
QN 37
fj1sd2 Q 75
QN 75
fj2 Q 36
QN 37
fj2d2 Q 74
QN 75
fj2s Q 36
QN 37
fj2sd2 Q 73
QN 74
fj4 Q 36
QN 36
fj4d2 Q 72
QN 75
fj4s Q 37
QN 36
fj4sd2 Q 73
QN 71
ft2 Q 37
QN 37
ft2d2 Q 73
QN 74
ha S 37
CO 37
had2 S 74
CO 74
hadh S 16
CO 16
iv Y 37
ivcd11 Y 36
YN 37
ivcd13 Y 33
YN 114
ivcd22 Y 74
YN 76
ivcd26 Y 67
YN 224
ivcd44 Y 150
YN 154
ivd2 Y 76
ivd3 Y 114
ivd4 Y 154
ivd6 Y 223
ivd8 Y 301
ivd16 Y 624
ivdh Y 16
ivt Y 31
ivtd2 Y 69
ivtd4 Y 145
ivtd8 Y 292
ivtd16 Y 591
ivtn Y 31
ivtnd2 Y 69
ivtnd4 Y 145
ivtnd8 Y 292
ivtnd16 Y 592
Cell
Name Output
Pin Maximum
Fanout ld1 Q 37
QN 36
ld1d2 Q 75
QN 75
ld1a Q 26
ld1d2a Q 59
ld1q Q 36
ld1qd2 Q 75
ld2 Q 36
QN 37
ld2d2 Q 74
QN 75
ld2q Q 37
ld2qd2 Q 75
ld3 Q 37
QN 36
ld3d2 Q 75
QN 74
ld4 Q 37
QN 36
ld4d2 Q 76
QN 75
ld5 Q 37
QN 37
ld5d2 Q 75
QN 75
ld5q Q 36
ld5qd2 Q 75
ld6 Q 36
QN 37
ld6d2 Q 74
QN 75
ld6q Q 37
ld6qd2 Q 74
ld7 Q 37
QN 36
ld7d2 Q 75
QN 74
ld8 Q 37
QN 36
ld8d2 Q 76
QN 75
oak_ldi2 Q 36
QN 37
oak_ldi2d2 Q 75
QN 75
oak_ldi3 Q 37
QN 37
oak_ldi3d2 Q 75
QN 75
ls0 Q 33
QN 33
ls0d2 Q 67
QN 67
ls1 Q 16
QN 16
ls1d2 Q 75
QN 75
mx2 Y 37
mx2d2 Y 74
mx2d4 Y 144
mx2dh Y 16
mx2i YN 16
mx2ia YN 16
mx2id2 YN 75
Cell
Name Output
Pin Maximum
Fanout
1.8 Maximum Fanouts Introduction
STDM110 1-30 Samsung ASIC
mx2id2a YN 74
mx2id4 YN 151
mx2id4a YN 150
mx2idh YN 7
mx2idha YN 7
mx2ix4 YN0 16
YN1 16
YN2 16
YN3 16
mx2x4 Y0 37
Y1 37
Y2 37
Y3 37
mx3i YN 36
mx3id2 YN 74
mx3id4 YN 150
mx4 Y 36
mx4d2 Y 71
mx4d4 Y 131
mx8 Y 35
mx8d2 Y 68
mx8d4 Y 121
nd2 Y 35
nd2d2 Y 71
nd2d4 Y 141
nd2dh Y 15
nd3 Y 23
nd3d2 Y 46
nd3d4 Y 93
nd3dh Y 10
nd4 Y 17
nd4d2 Y 34
nd4d2b Y 74
nd4d4 Y 150
nd4dh Y 7
nd5 Y 36
nd5d2 Y 74
nd5d4 Y 152
nd6 Y 37
nd6d2 Y 75
nd6d4 Y 151
nd8 Y 36
nd8d2 Y 75
nd8d4 Y 151
nid Y 37
oak_nid10p Y 2607
nid16 Y 605
nid2 Y 76
oak_nid20p Y 5185
nid3 Y 112
nid4 Y 151
nid6 Y 223
nid8 Y 297
nidh Y 16
nit Y 31
nitd16 Y 591
nitd2 Y 69
nitd4 Y 144
nitd8 Y 292
nitn Y 31
nitnd16 Y 591
nitnd2 Y 69
nitnd4 Y 144
nitnd8 Y 292
nr2 Y 19
Cell
Name Output
Pin Maximum
Fanout nr2a Y 36
nr2d2 Y 36
nr2d2b Y 75
nr2d4 Y 153
nr2dh Y 8
nr3 Y 11
nr3a Y 22
nr3d2 Y 22
nr3d2b Y 76
nr3d4 Y 153
nr3dh Y 6
nr4 Y 37
nr4d2 Y 76
nr4d4 Y 153
nr4dh Y 16
nr5 Y 37
nr5d2 Y 76
nr5d4 Y 153
nr6 Y 37
nr6d2 Y 76
nr6d4 Y 153
nr8 Y 37
nr8d2 Y 74
nr8d4 Y 147
oa21 Y 17
oa211 Y 16
oa2111 Y 15
oa2111d2 Y 74
oa211d2 Y 33
oa211d2b Y 74
oa211d4 Y 151
oa211dh Y 7
oa21d2 Y 35
oa21d2b Y 74
oa21d4 Y 150
oa21dh Y 7
oa22 Y 16
oa221 Y 13
oa221d2 Y 74
oa221d4 Y 150
oa222 Y 11
oa2222 Y 7
oa2222d2 Y 75
oa2222d4 Y 151
oa222d2 Y 22
oa222d2b Y 75
oa222d4 Y 152
oa22a Y 17
oa22d2 Y 32
oa22d2a Y 35
oa22d2b Y 76
oa22d4 Y 151
oa22d4a Y 151
oa22dh Y 8
oa22dha Y 7
oa31 Y 10
oa311 Y 10
oa3111 Y 8
oa3111d2 Y 74
oa311d2 Y 74
oa311d4 Y 150
oa31d2 Y 20
oa31d4 Y 150
oa31dh Y 5
oa32 Y 9
Cell
Name Output
Pin Maximum
Fanout
Introduction 1.8 Maximum Fanouts
Samsung ASIC 1-31 STDM110
oa321 Y 8
oa321d2 Y 75
oa321d4 Y 151
oa322 Y 6
oa322d2 Y 75
oa322d4 Y 151
oa32d2 Y 75
oa32d4 Y 151
oa33 Y 8
oa331 Y 7
oa331d2 Y 75
oa331d4 Y 150
oa332 Y 4
oa332d2 Y 75
oa332d4 Y 151
oa33d2 Y 75
oa33d4 Y 152
oa4111 Y 5
oa4111d2 Y 74
or2 Y 36
or2d2 Y 74
or2d4 Y 150
or2dh Y 16
or3 Y 36
or3d2 Y 76
or3d4 Y 153
or3dh Y 16
or4 Y 33
or4d2 Y 66
or4d4 Y 150
or4dh Y 16
or5 Y 33
or5d2 Y 65
or5d4 Y 150
scg1 Y 22
scg1d2 Y 46
scg2 Y 36
scg2d2 Y 74
scg3 Y 23
scg3d2 Y 46
scg4 Y 34
scg4d2 Y 68
scg5 Y 36
scg5d2 Y 72
scg6 Y 36
scg6d2 Y 74
scg7 Y 33
scg7d2 Y 67
scg8 Y 36
scg8d2 Y 74
scg9 Y 37
scg9d2 Y 74
scg10 Y 36
scg10d2 Y 73
scg11 Y 11
scg11d2 Y 22
scg12 Y 17
scg12d2 Y 35
scg13 Y 33
scg13d2 Y 66
scg14 Y 33
scg14d2 Y 67
scg15 Y 23
scg15d2 Y 46
scg16 Y 17
Cell
Name Output
Pin Maximum
Fanout scg16d2 Y 34
scg17 Y 34
scg17d2 Y 69
scg18 Y 22
scg18d2 Y 45
scg19 Y 17
scg19d2 Y 33
scg20 Y 18
scg20d2 Y 36
scg21 Y 11
scg21d2 Y 22
scg22 Y 16
scg22d2 Y 34
scg23 S 36
CO 36
scg23d2 S 72
CO 72
xn2 Y 37
xn2d2 Y 74
xn2d4 Y 146
xn3 Y 36
xn3d2 Y 71
xn3d4 Y 130
xo2 Y 37
xo2d2 Y 74
xo2d4 Y 146
xo3 Y 36
xo3d2 Y 71
xo3d4 Y 130
Cell
Name Output
Pin Maximum
Fanout
1.8 Maximum Fanouts Introduction
STDM110 1-32 Samsung ASIC
1.8.2 I/O CELLS
The maximum fanouts for I/O cells
are as follows.
Table 1-7. Maximum Fanouts
of I/O Cells
(tR/tF = 0.273ns, one fanout (SL) =
0.00638pF)
Cell
Name Output
Pin Maximum
Fanout
phic Y 162
phicd Y 162
phicu Y 162
phis Y 162
phisd Y 162
phisu Y 162
phit Y 162
phitd Y 162
phitu Y 162
phsosck1 YN 157
phsosck2 YN 121
phsoscm1 YN 121
phsoscm2 YN 121
ph2sosck1 YN 61
ph2sosck2 YN 142
ph2soscm1 YN 145
ph2soscm2 YN 257
pic Y 161
pic_abb Y 161
picc_abb Y 164
picd Y 161
picen_abb Y 161
picu Y 161
pis Y 161
pisd Y 161
pisu Y 161
ptic Y 162
pticd Y 162
pticu Y 162
ptis Y 161
ptisd Y 161
ptisu Y 161
ptit Y 162
ptitd Y 162
ptitu Y 162
Introduction 1.8 Maximum Fanouts
Samsung ASIC 1-33 STDM110
1.8.3 CK CELL MAX FANOUT
STDM110 maximum fanout for CK cells
<Condition>
• VDD = 1.8V
• Fanout = 0.00338pF (= input cap for CK pin of FD1)
• Standard Load (SL) = 0.006380pF
• Input slope = 0.273ns
• Max output transition time (mott) =1.5ns
• Maximum frequency ≤ 200MHz
• Net length (µm/fanout): branch net length for each fanout except trunk
Table 1-8. Maximum Fanout for CK Cells
Table 1-9. Maximum Fanout for NID Cells
For high fanout nets including clock net, Samsung strongly recommends using
clock tree synthesis.
Trunk width (µm) 8 In case that
interconnection
is not considered
Net length
(µm/fanout) 20 200
Trunk length (µm) 5000 10000 5000 10000
ck2 272 106 55 21 585
ck4 597 399 122 81 1060
ck6 890 640 181 130 1519
ck8 1247 904 254 184 2121
Trunk width (µm) 0.44 8 In case that
interconnection
is not considered
Net length
(µm/fanout) 20 200
Trunk length (µm) 5000 10000 5000 10000
nid −−−− 37
nid2 −−−− 76
nid3 −−−− 112
nid4 15 −−− 151
nid6 47 −3−223
nid8 72 −14 −297
nid16 132 −56 22 605
1.9 Package Capability By Lead Count Introduction
STDM110 1-34 Samsung ASIC
1.9 Package Capability By Lead Count
■In-house ❏Sub-contractor
LQFP
Package Pitch Lead
Inductance Lead Count
32 48 64 80 100 128 144 160 176 208 256
0707 mm 0.8 ■
0.5 < 3nH ■
1010 mm 0.5 < 5nH ■
1212 mm 0.5 < 5nH ■
1420 mm 0.5 < 12nH ■
1414 mm 0.8 < 6nH ■
0.5 < 6nH ■
0.4 v ■
2020 mm 0.4 ■
2024 mm 0.5 ■■
2828 mm 0.5 < 17nH ■
0.4 < 17nH ■
TQFP
1212 mm 0.5 < 5nH ■
1414 mm 0.5 < 5nH ■
1420 mm 0.065 < 10nH ■
PQFP (PQ2 Thermally Enhanced)
Package Pitch Lead Count
100 120 128 144 160 208 240 304
1420 mm 0.65 ❏
0.5 ❏
2828 mm 0.8 ❏❏
0.65 ❏❏
0.5 ❏
3232 mm 0.5 ❏
4040 mm 0.5 ❏
QFP (with Heat Spreader)
1420 mm 0.65 ■
0.5
2828 mm 0.8 ❏■
0.65 ❏❏
0.5 ❏
3232 mm 0.5 ❏
4040 mm 0.5 ❏
Introduction
Samsung ASIC 1-35 STDM110
■In-house ❏Sub-contractor
PLCC
Package Pitch Lead Inductance Lead Count
18 28 32 44 52 68 84
7.37 x 12.35 mm
1.27
■
11.53 x 11.53 mm ■
11.44 x 13.98 mm ■
16.61 x 16.61 mm < 5nH ■
19.10 x 19.10 mm ■
24.23 x 24.23 mm ■
29.31 x 29.31 mm < 13nH ■
SOP
Package Pitch Lead Count
32 48 64(56) 68 69 100 256
8.34 x 20.30 mm 1.27 ■
TSOP1
1014 mm 0.4 ■
PLCC
24.33 x 24.23mm 1.27 ■
QFP
1420 mm 0.65 ■
FBGA
0909 mm 0.75 ■
0911 mm 0.8 ■
1717 mm 1.00 ■
SBGA
Package Pitch Lead Inductance Lead Count
Lp/g Lsig 256 304 352 540 648 696
2727 mm
1.27
< 3nH < 7nH ❏
3131 mm < 3nH < 8nH ❏
3535 mm < 3nH < 8nH ❏
42.5 x 47.5 mm < 3nH <9nH ❏
4545 mm < 3nH <9nH ❏
47.5 x 47.5 mm ❏
Introduction
STDM110 1-36 Samsung ASIC
Package Parameter Guide for PBGAs and FBGAs
NOTES: Condition to use above package parameter guide;
1. Above data are estimated calculations with below assumptions.
2. Center balls are all ground balls for PBGA ball map design.
3. For a ball map design, the power/ground ball pair should be arranged next to each other and located on the center closed
inside row and column.
4. Distance between power/ground bonding pad and ball must be less than listed above T[mm] column distance.
5. The bonding wire length between power/ground ball and PCB bonding pad should be less than 2mm.
6. L_total = L_p/g + L_wire; L_p/g: Total inductance of power/ground pad L_sig: Signal line inductance.
7. Contact IPT development P/T for ball map design request form in special case, other than above 1) ~ 6) notes. Special
guide will be provided.
Lead Inductance
Package Type Stack-Up
(layer) PCB Size
(mm x mm) L_p/g
(nH) L_wire
(nH) L_total
(nH) T
(mm) L_sig
(nH)
PBGA
2L 23 x 23 < 3.5 1.5 < 4.5 5 < 7
2L 27 x 27 < 4 1.5 < 5.5 6 < 7.5
2L 31 x 31 < 4.1 1.5 < 5.6 7 < 8.5
2L 35 x 35 < 4.5 1.5 < 6 8 < 10
4L 23 x 23 < 1.3 1.5 < 2.8 5 < 3.5
4L 27 x 27 < 1.5 1.5 < 3 6 < 4
4L 31 x 31 < 1.6 1.5 < 3.1 7 < 4.5
4L 35 x 35 < 1.7 1.5 < 3.2 8 < 5.5
FBGA
2L 06 x 06 < 2 1.5 < 3.5 2 < 2.5
2L 08 x 08 < 2 1.5 < 3.5 2 < 3.5
2L 09 x 09 < 2 1.5 < 3.5 2 < 4.5
2L 10 x 10 < 2 1.5 < 3.5 2 < 4.5
2L 12 x 12 < 2 1.5 < 3.5 2 < 5
2L 13 x 13 < 2 1.5 < 3.5 2 < 6
2L 14 x 14 < 2 1.5 < 3.5 2 < 6
2L 16 x 16 < 2 1.5 < 3.5 2 < 7
2L 17 x 17 < 2 1.5 < 3.5 2 < 8
2L 18 x 18 < 2 1.5 < 3.5 2 < 8
Introduction 1.10 Power Dissipation
Samsung ASIC 1-37 STDM110
1.10
Power
Dissipation
1.10.1 ESTIMATION OF POWER DISSIPATION IN CMOS CIRCUIT
CMOS circuits have been traditionally considered to consume low power since
they draw very small amount of current in a steady state. However, the recent
revolution in a CMOS technology that allows very high gate density has changed
the way the power dissipation should be understood. The power dissipation in a
CMOS circuit is affected by various factors such as the number of gates, the
switching frequency, the loading on the output of a gate, and so on.
Power dissipation is important when designers decide the amount of necessary
power supply current for the device to operate in safety. Propagation delays and
reliability of the device also depend on power dissipation that determines the
temperature at which the die operates. To obtain high speed and reliability,
designers must estimate power dissipation of the device accurately and
determine the appropriate environments including the package and system
cooling methods.
This section describes the concepts of two types of power dissipation (static and
dynamic) in a CMOS circuit, the method of calculating those in the SEC STD110
library.
1.10.2 STATIC (DC) POWER DISSIPATION
There are two types of static or DC current contributing to the total static power
dissipation in CMOS circuits.
One is the leakage current of the gates resulted by a reverse bias between a well
and a substrate region. There is no DC current path from power to ground in a
CMOSbecauseone of the transistor pair is always off, therefore, no static current
except the leakage current flows through the internal gates of the device. The
amount of this leakage current is, however, in the range of tens of nano amperes,
which is negligible.
The other is DC current that flows through the input and output buffers when the
circuit is interfaced with other devices, especially TTL. The current of pull-up/pull-
down transistor in the input buffers is about 33µA (at 3.3V) and 25uA (at 2.5V)
typically, which is also negligible. Therefore, only DC current that the output buff-
ers source or sink has to be counted to estimate the total static power dissipation.
DC power dissipation of output and bi-directional buffers is determined by the
following formula:
where,
n = Number of output and bidirectional buffers
T = Total operation time in output mode
tH= The sum of logic high state time
tL= The sum of logic low state time
tL + tH = T (Supposed that all output and bidirectional buffers have just logic
high or low state)
Sout is the output mode ratio of bidirectional buffers (typically 0.5)
PDC_OUTPUT [mW] VOL k() IOL k() tLk()
××()
k1=
n
∑VDD VOH k()
–()IOH k() tHk()
××()
k1=
n
∑
+
T⁄
=
PDC_BI [mW] VOL k() IOL k() tLk()
××()
k1=
n
∑VDD VOH k()
–()IOH k() tHk()
××()
k1=
n
∑
+
Sout T⁄×=
1.10 Power Dissipation Introduction
STDM110 1-38 Samsung ASIC
1.10.3 DYNAMIC (AC) POWER DISSIPATION
When a CMOS gate changes its state, it draws switching current as a result of charging or discharging a load
capacitance, CL. The energy associated with the switching current for a node capacitance, CL, is
where VDD is the power supply voltage.
In addition to the power dissipated by the load capacitance, CMOS circuits consume power due to the short-
circuit current flowing through a temporary VDD-to-ground path during switching.
The dynamic power dissipation for an entire chip is much more complicated to estimate since it depends on the
degree of switching activity of the circuit. Samsung has found that the degree of switching activity is 10% on the
average and recommends this number to be used in estimating the total dynamic power dissipation.
1.10.4 POWER DISSIPATION IN STDM110
This section describes the equations on how to estimate the power dissipation in STDM110. As explained in the
previous section, the total power dissipation (PTOTAL) consists of static power dissipation (PDC) and dynamic
power dissipation (PAC).
PTOTAL = PAC + PDC
PDC is negligible in case of CMOS logic.
The dynamic power dissipation is caused by three components: input buffers (PAC_INPUT), output buffers
(PAC_OUTPUT), bidirectional buffers (PAC_BI), and internal cells (PAC_INTERNAL).
PAC = PAC_ INPUT + PAC_OUTPUT + PAC_BI + PAC_INTERNAL
Each term mentioned above is characterized by the following equations:
CLVDD2
×
PAC_INPUT [mW] 2.5 Ij_eq_p Fj
100
----------Sj
××
3.3+
j
N_2.5V_input
∑
×Ik_eq_p Fk
100
----------Sk
××
6.25+
k
N_3.3V_input
∑0.001 SiFiCi_inload
×××()
i
N_total_input
∑
××=
PAC_OUTPUT [mW] 2.5 Ii_eq_p Fi
100
----------Si
××
3.3+
i
N_2.5V_output
∑
×Ij_eq_p Fj
100
----------Sj
××
j
N_3.3V_output
∑+×=
6.25 0.001 SiFiCi_outload
×××()10.89 0.001 SjFjCj_outload
×××()
j
N_3.3V_output
∑
×+
i
N_2.5V_output
∑
×
PAC_BI [mW] PAC_BI_INPUT×1S
out
–()PAC_BI_OUTPUT Sout
×+=
PAC_BI_INPUT [mW] 2.5 Ij_eq_p Fj
100
----------Sj
××
j
N_2.5V_bi
∑3.3 Ik_eq_p Fk
100
----------Sk
××
6.25+
k
N_3.3V_bi
∑0.001 SiFiCi_inload
×××()
i
N_total_bi
∑
××+×=
PAC_BI_OUTPUT [mW] 2.5 Ii_eq_p Fi
100
----------Si
××
i
N_2.5V_bi
∑3.3 Ij_eq_p Fj
100
----------Sj
××
+
j
N_3.3V_bi
∑
×+×=
6.25 0.001 SiFiCi_outload
×××()
i
N_2.5V_bi
∑
×10.89 0.001 SiFiCi_outload
×××()
j
N_3.3V_bi
∑
×+
PAC_INTERNAL [mW] 0.001 0.1176 S 0.0093+×()×G F 0.001 Pi
×Fi
×()
j
N_macro
∑
+××=
Introduction 1.10 Power Dissipation
Samsung ASIC 1-39 STDM110
where,
N_2.5V_input is the number of 2.5V interface input buffers used
N_3.3V input is the number of 3.3V interface input buffers used,
N_total_input = N_2.5V_input + N_3.3V input
N_2.5V_output is the number of 2.5V interface output buffers used,
N_3.3V_output is the number of 3.3V interface output buffers used,
N_2.5V_bi is the number of 2.5V interface bi-directional buffers used,
N_3.3V_bi is the number of 3.3V interface bi-directional buffer used,
N_macro is the number of macro cells used,
G is the size of the design in gate count,
F is the operating frequency in MHz,
S is the estimated degree of switching activity (typically 0.1 for internal and 0.5 for I/O),
Sout is the output mode ratio of bi-directional buffers (typically 0.5),
C is the load capacitance in pF.
P is the characterized power for the i-th hard macro block (µW/MHz)
1.10.5 TEMPERATURE AND POWER DISSIPATION
The total power dissipation, PTOTAL can be used to find out the device temperature by the following equation:
θJA = (TJ – TA) / PTOTAL
where,
θJA is the thermal impedance,
TJ is the junction temperature of the device,
TA is the ambient temperature.
Thermal impedances of the Samsung packages are given in the following table. The junction temperature,
obtained by multiplying PTOTAL by the appropriate θJA and adding TA, determines the derating factor for the
propagation delays and also indicates the reliability measures. Hence, designers can achieve the desired derating
factor and reliability targets by choosing appropriate packages and system cooling methods.
Table 1-10. Thermal Impedances of Samsung Plastic Packages
SOP/TSOP
Pin Number 20 24 28 32 44 50 54 62 66
θJA[°C/W] 63 58 41-44 46-56 44-71 39-59 34-56 27-33 34-46
QFP
Pin Number 44 48 80 100 120 128 160 208 240 256
θJA[°C/W] 51-62 43-56 43-74 27-61 33-47 43-51 29-51 22-43 28-47 29-42
TQFP/LQFP
Pin Number 32 64 100 144 160 176 208 256
θJA[°C/W] 68-70 47 37-70 38 35-62 31-34 37-56 30-42
PBGA
Pin Number 272 388 356 (TEPBGA) 452 (TEPBGA)
θJA[°C/W] 19-22 16-19 16 14
SBGA
Pin Number 256 304 352 432 600
θJA[°C/W] 14.1 13.1 11.7 10.2 8.3
1.11 VDD/VSS Rules And Guidelines Introduction
STDM110 1-40 Samsung ASIC
1.11
VDD/VSS Rules
And Guidelines
There are three kinds of VDD and VSS in STDM110, providing power to internal
and I/O area.
• Core logic
– VDD1I, VSS1I
• Pre-driver (I/O area)
– VDD2P, VDD3P, VSS2P, VSS3P
• Output-drive (I/O area)
– VDD2O, VDD3O, VSS2O, VSS3O
The number of VDD and VSS pads required for a specific design depends on the
following factors:
• Number of input and output buffers
• Number of simultaneous switching outputs
• Number of used gates and simultaneous switching gates
• Operating frequency
1.11.1 BASIC PLACEMENT GUIDELINES
The purpose of these guidelines is to minimize IR drop and noise for reliable
device operations.
• Core logic and pre-driver VDD/VSS pads should be evenly distributed on all
sides of the chip.
• If you have core block demanding high power (compiled memory, analog),
extra power pads should be placed on that side.
• Power pads for SSO group should be evenly distributed in the SSO group.
• Do not place the quiet signal (analog, reference) or analog power (VDDA/
VSSA) or bi-directional buffer next to a SSO group.
• The opposite types of power pads (VDD/VSS) should be placed as close as
possible.
• If it is possible, do not place power pads (VDD/VSS) at the corner of the chip.
1.11.2 VDD1I/VSS1I ALLOCATION GUIDELINES
The purpose of these guidelines is to ensure that the minimum number of core
logic power pad pairs meeting the electromigration current limit are used. The
number of VDD1I/VSS1I pads required for a specific design is determined by the
function of the operating frequency of a chip.
• VDD1I bus width and the number of pads are equal to those of VSS1I
• VDD1I/VSS1I buses and pads should be distributed evenly in the core and
on each side of the chip.
• The total number of core logic VDD1I pads is equal to that of VSS1I pads.
Introduction 1.11 VDD/VSS Rules And Guidelines
Samsung ASIC 1-41 STDM110
The number of VDD1I/VSS1I pad pairs required for a design can be calculated from the following expression:
The number of VDD1I/VSS1I pad pairs =
where,
G = The core (excluding hard macro blocks) size in the gate counts
S = The switching ratio (typically = 0.1)
F = Operating frequency (MHz)
Pi = Characterized current for the i-th hard macro block (mA/MHz)
Fi = Operating frequency for the i-th hard macro block (MHz)
Iem = Current limit per VDD/VSS pad pairs based on ElectroMigration
rule (80mA)
For reliable device operation and minimize IR voltage drop, minimum number of VDD1I/VSS1I power pad pairs is
4.
Extra power may be needed for the demanding high power macro blocks (SRAM, analog block...).
1.11.3 VDD2P/VSS2P (VDD3P/VSS3P) ALLOCATION GUIDELINES.
These guidelines ensure that an adequate input threshold voltage margin is maintained during a switching.
The number of VDD2P/VSS2P (VDD3P/VSS3P) pads required for a design can be calculated from the following
expression:
In above expression,
Ieq_p = ∑(Average current of input/output buffers and bi-direction pre-drivers at maximum operational I/O
frequency) [mA] (Refer Table 1-11)
Table 1-11. 2.5V Interface
Input Buffer Type CMOS CMOS Schmitt
Ieq_p (mA) 0.35 0.36
Output Pre-Driver Type Driver Tristate
B1–4 B6–8 B10–12 T1–4 T6–8 T10–12
Ieq_p (mA) Normal 0.14 0.27 0.41 0.24 0.36 0.53
Slew rate 0.14 0.25 0.35 0.25 0.35 0.45
0.001 0.0470 S 0.0037+×()×GF×Pi Fi×()
i
N_macro
∑
+×lem
⁄round up–
Number_ of_VDD2P/VSS2P(VDD3P/VSS3P) pairs leq_p
lem
-----------round up–=
where
N_input is the number of input buffers used,
N_output is the number of output buffers used,
N_bi is the number of bi-directional buffers used,
F is the operating frequency in MHz,
Sout is the output mode ratio of bi-directional buffers (typically 0.5),
Iem = Current limit per VDD/VSS pad pairs based on electromigration rule. (80mA)
Ieq_p Ieq_p_in Fi
100
----------
×
i
N_input
∑Ij_eq_p_out Fj
100
----------
×
j
N_output
∑Ik_eq_p_in Fk
100
----------
×
1S
out
–()
k
N_bi
∑Ik_eq_p_out Fk
100
----------
×
Sout
×++ +=
1.11 VDD/VSS Rules And Guidelines Introduction
STDM110 1-42 Samsung ASIC
Table 1-12. 3.3V Interface
For reliable device operation and minimum IR voltage drop, at least 4 pairs of VDD2P/VSS2P (VDD3P/VSS3P)
power pads are needed.
1.11.4 VDD2O/VSS2O (VDD3O/VSS3O) ALLOCATION GUIDE
SSO (Simultaneous Switching Output) current induced in power and ground inductance can cause system failure
becauseof voltage fluctuations. For the calculation of output drive power padnumbers,weconsider the SSO noise
aswellas the current limit based on electromigration. We may define the SSO as outputs switching simultaneously
in 1ns windows, such as bus type buffers.
NOTE: In case of heavy load, high frequency and low package inductance, the number of power pads for SSO block could
be determined by electromigration rule rather than limit of SSO noise. So the number of power pads for SSO block
should be determined as the worse one of the power pad number under the limit of SSO noise and that under the
limit of electromigration rule.
1) Number of power pads for SSO block
- Number of power pads for SSO block under the limit of SSO noise
• Calculating the number of power pad for each SSO group from the following expressions:
In above formula,
NVDDOeach_sso = Number of VDD2O (VDD3O) pad required for each SSO group
NVSSOeach_sso = Number of VSS2O (VSS3O) pad required for each SSO group
NBvdd =Number of buffers per VDD2O (VDD3O) power pad with 1nH lead inductance
NBvss = Number of buffers per VSS2O (VSS3O) ground pas with 1nH lead inductance
Lpg = Package lead frame inductance
(refer to 1.9 package capability by lead count)
Dsso_mode = DL_mode × DP_mode × DV_mode × DT_mode × DC_mode (Refer to Table 1-13. and Table 1-14.)
DL_mode = Lead inductance derating factor
DP_mode = Process derating factor
DV_mode = Voltage derating factor
DT_mode = Temperature derating factor
DC_mode = Cload derating factor (*mode is either vdd or vss.)
Input Buffer Type CMOS TTL Schmitt Trigger
Ieq_p
(mA) Normal 0.52 0.54 0.54
Tolerant 0.60 0.60 0.51
Output Pre-driver Type CMOS Driver Tristate
B1–4 B6–8 B10–12 T1–4 T6–8 T10–12
Ieq_p
(mA) Normal Normal 0.25 0.46 0.55 0.34 0.51 0.60
Slew rate 0.28 0.37 0.46 0.36 0.45 0.55
Tolerant ---
(T1,2,3)
0.50 --
NVDDOeach_SSO number_of_SSO
NBvdd
---------------------------------------------- Lpg 1
DSSO_mode
--------------------------
××=
NVSSOeach_SSO number_of_SSO
NBvss
---------------------------------------------- Lpg 1
DSSO_mode
--------------------------
××=
Introduction 1.11 VDD/VSS Rules And Guidelines
Samsung ASIC 1-43 STDM110
Table 1-13. Derating Equation (external 2.5V interface)
Table 1-14. Derating Equation (external 3.3V interface)
Item Mode Equation Range
Package Lead DL_vdd 0.0417 x Lpg + 0.9375
0.0417 x Lpg + 0.9375 3nH ≤Lpg ≤10nH
10nH ≤Lpg ≤15nH
DL_vss 0.0417 x Lpg + 0.9375
0.0417 x Lpg + 0.9375 3nH ≤Lpg ≤10nH
10nH < Lpg ≤15nH
Process DP_vdd
1.0000
1.2549
1.7255
best
typical
worst
DP_vss
1.0000
1.2549
1.7451
best
typical
worst
Voltage DV_vdd – 0.8824 x voltage + 3.3235
– 0.5882 x voltage + 2.5882 2.3 ≤ voltage ≤ 2.5
2.5 < voltage ≤ 2.7
DV_vss – 0.8824 x voltage + 3.3235
– 0.5882 x voltage + 2.5882 2.3 ≤ voltage ≤ 2.5
2.5 < voltage ≤ 2.7
Temperature DT_vdd 0.0024 x temperature + 1.0000
0.0032 x temperature + 0.9786 -40 ≤ temperature ≤ 25
25 < temperature ≤ 125
DT_vss 0.0031 x temperature + 1.0000
0.0029 x temperature + 1.0071 -40 ≤ temperature ≤ 25
25 < temperature ≤ 125
Cload DC_vdd 0.0347 x Cload + 0.6525
0.0286 x Cload + 0.8369 10pF ≤ Cload ≤ 30pF
30pF < Cload ≤ 50pF
DC_vss 0.0354 x Cload + 0.6456
0.0285 x Cload + 0.8544 10pF ≤ Cload ≤ 30pF
30pF < Cload ≤ 50pF
Item Mode Equation Range
Package Lead DL_vdd 0.0462 x Lpg + 1.1538
0.0231 x Lpg + 1.3846 3nH ≤Lpg ≤10nH
10nH ≤Lpg ≤15nH
DL_vss 0.0469 x Lpg + 0.7813
0.0313 x Lpg + 0.9375 3nH ≤Lpg ≤10nH
10nH < Lpg ≤15nH
Process DP_vdd
1.0000
1.2537
2.2985
best
typical
worst
DP_vss
1.0000
1.1563
1.4063
best
typical
worst
Voltage DV_vdd – 1.2936 x voltage + 5.4328
– 0.4478 x voltage + 2.6119 3.0 ≤ voltage ≤ 3.3
3.3 < voltage ≤ 3.6
DV_vss – 0.4166 x voltage + 2.5000
– 0.4166 x voltage + 2.5000 3.0 ≤ voltage ≤ 3.3
3.3 < voltage ≤ 3.6
Temperature DT_vdd 0.0036 x temperature + 1.0000
0.0041 x temperature + 0.9878 -40 ≤ temperature ≤ 25
25 < temperature ≤ 125
DT_vss 0.0038 x temperature + 1.0000
0.0028 x temperature + 1.0227 -40 ≤ temperature ≤ 25
25 < temperature ≤ 125
Cload DC_vdd 0.0338 x Cload + 0.6618
0.0554 x Cload + 0.0146 10pF ≤ Cload ≤ 30pF
30pF < Cload ≤ 50pF
DC_vss 0.0444 x Cload + 0.5556
0.0370 x Cload + 0.7778 10pF ≤ Cload ≤ 30pF
30pF < Cload ≤ 50pF
1.11 VDD/VSS Rules And Guidelines Introduction
STDM110 1-44 Samsung ASIC
Table 1-15. NBvdd/NBvss Parameter (Process = best, Volt =2.7V/3.6V Temp. = 0˚C, Llead = 1nH)
NOTE: pob1 means 1mA output driver cell, and pob12 means 12mA output driver cell.
• Calculating the number of required power pad for total SSO from the following expression:
NVDDO1sso = ∑NVDDOeach_sso
NVSSO1sso = ∑NVSSOeach_sso
In the above formula,
NVDDOsso = Number of VDD2O (VDD3O) pad per total SSO buffers
NVSSOsso = Number of VSS2O (VSS3O) pad per total SSO buffers
Buffer Type Voltage Type
Normal Slew-Rate Medium (sm) Slew-Rate High (sh)
NBvdd NBvss NBvdd NBvss NBvdd NBvss
pob1 (pot1)
2.5V Interface
176 178 – – – –
pob2 (pot2) 140 142 – – – –
pob4 (pot4) 102 102 160 160 – –
pob6 (pot6) 84 84 142 142 – –
pob8 (pot8) 72 72 116 116 – –
pob8 (pot10)
pob12 (pot12) 60 60 96 96 236 236
phob1 (phot1)
3.3V Interface
382 166 – – – –
phob2 (phot2) 276 104 – – – –
phob4 (phot4) 134 64 168 104 – –
phob6 (phot6) 108 44 132 90 – –
phob8 (phot8) 98 38 118 86 – –
phob8 (phot10)
phob12 (phot12) 86 32 92 62 130 124
ptot1 5V Tolerant 434 376 –ptot2 272 180
ptot3 203 116
Introduction 1.11 VDD/VSS Rules And Guidelines
Samsung ASIC 1-45 STDM110
- Number of power pads for SSO block under the limit of electromigration rule
• Calculating the following expression:
2) Number of power pads for non-SSO block
• Calculating the following expression:
3) Total number of power pads for VDD2O/VSS2O (VDD3O/VSS3O)
• Calculating the following expressions:
When open drain type buffers are used, you can consider using VSS2O (VSS3O) pads since they have current
sink only.
NVDDO2SSO NVSSO2SSO
⁄Ieq_o
Iem
-----------
=
where
N_SSO_output is the number of simultaneous switching output buffers used,
N_SSO_bi is the number of simultaneous switching bi-directional buffers used,
Coutload = Output load capacitance [pF]
V = Operating voltage [V]
F = Maximum I/O operating frequency [MHz]
S = Switching ratio (typically 0.5)
Sout = Output mode ratio of bidirectional buffers (typically 0.5)
Iem = Current limit per VDD/VSS pad paris based on electromigration rule. (80mA)
Ieq_o 0.001 Ci_outload Vi
×× Fi
×Si
×()
i
N_SSO_output
∑0.001 Cj_outload Vj
×× Fj
×Sj
×Sj_out
×()
j
N_SSO_bi
∑
+=
NVDDOnon_SSO NVSSOnon_SSO
⁄Ieq_o
Iem
-----------
=
where
N_non_SSO_output is the number of non-simultaneous switching output buffers used,
N_non_SSO_bi is the number of non-simultaneous switching bi-directional buffers used,
Coutload = Output load capacitance [pF]
V = Operating voltage [V]
F = Maximum I/O operating frequency [MHz]
S = Switching ratio (typically 0.5)
Sout = Output mode ratio of bidirectional buffers (typically 0.5)
Iem = Current limit per VDD/VSS pad paris based on electromigration rule. (80mA)
Ieq_o 0.001 Ci_outload Vi
×× Fi
×Si
×()
i
N_non_SSO_output
∑0.001 Cj_outload Vj
×× Fj
×Sj
×Sj_out
×()
j
N_non_SSO_bi
∑
+=
Number of VDD2O (VDD3O) max NVDDO1SSO NVDDO2SSO
,()NVDDOnon_SSO
+round-up=
Number of VSS2O (VSS3O) max NVSSO1SSO NVSSO2SSO
,()NVSSOnon_SSO
+round-up=
1.12 Crystal Oscillator Consideration Introduction
STDM110 1-46 Samsung ASIC
1.12
Crystal Oscillator
Consideration
1.12.1 OVERVIEW
STDM110 contains a circuit commonly referred to as an “on-chip oscillator.” The
on-chip circuit itself is not an oscillator but an amplifier which is suitable for being
used as the amplifier part of a feedback oscillator. With proper selection of off-
chip components, this oscillator circuit performs better than any other types of
clock oscillators.
It is very important to select suitable off-chip components to work with the on-
chip oscillator circuitry. It should be noted, however, that Samsung cannot
assume the responsibility of writing specifications for the off-chip components of
the complete oscillator circuit, nor of guaranteeing the performance of the
finished design in production, any more than a transistor manufacturer, whose
data sheets show a number of suggested amplifier circuits, can assume
responsibility for the operation, in production, of any of them.
We are often asked why we don’t publish a list of required crystal or ceramic
resonator specifications, and recommend values for the other off-chip
components. This has been done in the past, but sometimes with consequences
that were not intended.
Suppose we suggest a maximum crystal resistance of 30ohms for some given
frequency. Then your crystal supplier tells you the 30ohm crystals are going to
cost twice as much as 50ohm crystals. Fearing that Samsung will not “guarantee
operation” with 50ohm crystals, you order the expensive ones.
In fact, Samsung guarantees only what is embodied within an Samsung product.
Besides, there is no reason why 50ohm crystals couldn’t be used, if the other
off-chip components are suitably adjusted.
Should we recommend values for the other off-chip components? Should we do
for 50ohm crystals or 30ohm crystals? With respect to what should we optimize
their selection? Should we minimize start-up time or maximize frequency
stability?
In many applications, neither start-up time nor frequency stability is particularly
critical, and our “recommendations” are only restricting your system to
unnecessary tolerances. It all depends on the application.
1.12.2 OSCILLATOR DESIGN CONSIDERATIONS
ASIC designers have a number of options for clocking the system. The main
decision is whether to use the “on-chip” oscillator or an external oscillator. If the
choice is to use the on-chip oscillator, what kinds of external components are to
use an external oscillator, what type of oscillator would it be?
The decisions have to be based on both economic and technical requirements.
In this section we will discuss some of the factors that should be considered.
Introduction 1.12 Crystal Oscillator Consideration
Samsung ASIC 1-47 STDM110
1.12.2.1 On-Chip Oscillator
In most cases, the on-chip amplifier with the appropriate external components
provides the most economical solution to the clocking problem. Exceptions may
arise in server environments when frequency tolerances are tighter than about
0.01%.
The external components that commonly used for CMOS gate oscillator are a
positive reactance (normal crystal oscillator), two capacitors, C1 and C2, and
two resistor Rf and Rx as shown in the figure below.
Figure 1-19. CMOS Oscillator
1.12.2.2 Crystal Specifications
Specifications for an appropriate crystal are not very critical, unless the
frequency is. Any fundamental-mode crystal of medium or better quality can be
used.
We are often asked what maximum crystal resistance should be specified. The
best answer to that question is the lower the better, but use what is available.
The crystal resistance will have some effect on start-up time and steady-state
amplitude, but not so much that it can’t be compensated for by appropriate
selection of the capacitance, C1 and C2.
Similar questions are asked about specifications of load capacitance and shunt
capacitance. The best advice we can give is to understand what these
parameters mean and how they affect the operation of the circuit (that being the
purpose of this application note), and then to decide for yourself if such
specifications are meaningful in your frequency tolerances are tighter than about
0.1%.
Part of the problem is that crystal manufacturers are accustomed to talking
“ppm” tolerances with radio engineers and simply won’t take your order until
you’ve filled out their list of frequency tolerance requirements, both for yourself
and to the crystal manufacturer. Don’t pay for 0.003% crystals if your actual
frequency tolerance is 1%.
C1
C2 Rx
Rf
PADA
PADY
Feedback
Inside of a Chip
Amplifier
1.12 Crystal Oscillator Consideration Introduction
STDM110 1-48 Samsung ASIC
1.12.2.3 Oscillation Frequency
The oscillation frequency is determined 99.5% by the crystal and up to about
0.5% by the circuit external to the crystal.
The on-chip amplifier has little effect on the frequency, which is as it should be,
since the amplifier parameterizes temperature and process dependent.
The influence of the on-chip amplifier on the frequency is by means of its input
and output (pin-to-ground) capacitances, which parallel C1 and C2, and the
PADA-to-PADY (pin-to-pin) capacitance, which parallels the crystal. The input
and pin-to-pin capacitances are about 7pF each.
Internal phase deviations capacitance of 25 to 30pF. These deviations from the
ideal have less effect in the positive reactance oscillator (with the inverting
amplifier) than in a comparable series resonant oscillator (with the non-inverting
amplifier) for two reasons: first, the effect of the output capacitor; second, the
positive reactance oscillator is less sensitive, frequency-wise, to such phase
errors.
1.12.2.4 C1 / C2 Selection
Optimal values for the capacitors C1 and C2 depend on whether a quartz crystal
or ceramic resonator is being used, and also on application-specific
requirements on start-up time and frequency tolerance.
Start-up time is sometimes more critical in microcontroller systems than
frequency stability, because of various reset and initialization requirements.
Less commonly, accuracy of the oscillator frequency is also critical, for example,
when the oscillator is being used as a time base. As a general rule, fast start-up
and stable frequency tend to pull the oscillator design in opposite directions.
Considerations of both start-up time and frequency stability over temperature
suggest that C1 and C2 should be about equal and at least 15pF. (But they don’t
have to be either.)
Increasing the value of these capacitances above some 40 or 50pF improves
frequency stability. It also tends to increase the start-up time. These is a
maximum value (several hundred pH, depending on the value of R1 of the quartz
or ceramic resonator) above which the oscillator won’t start up at all.
If the on-chip amplifier is a simple inverter, the user can select values for C1 and
C2 between some 15 and 50pF, depending on whether start-up time or
frequency stability is the more critical parameter in a specific application.
1.12.2.5 Rf / Rx Selection
A CMOS inverter might work better in this application since a large Rf (1mega-
ohm) can be used to hold the inverter in its linear region.
Logic gates tend to have a fairly low output resistance, which testabilizes the
oscillator. For that reason a resistor Rx (several k-ohm) is often added to the
feedback network, as shown in Figure 1-19.
At higher frequencies a 20 or 30pF capacitor is sometimes used in the Rx
position, to compensate for some of the internal propagation delay.
Introduction 1.12 Crystal Oscillator Consideration
Samsung ASIC 1-49 STDM110
1.12.2.6 Pin Capacitance Rf / Rx Selection
Internal pin-to-ground and pin-to-pin capacitances, and PADA and PADY have
some effect on the oscillator. These capacitances are normally taken to be in the
range of 5 to 10pF, but they are extremely difficult to evaluate. Any measurement
of one such capacitance necessarily include effects from the others.
One advantage of the positive reactance oscillator is that the pin-to ground cap.
is paralleled by an external bulk capacitance, so a precise determination of their
value is unnecessary.
We would suggest that there is little justification for more precision than to assign
them a value of 7pF (PADA-to-ground and PADA-to-PADY). This value is
probably not in error by more than 3 or 4pF.
The PADY-to-ground cap. is not entirely a “pin capacitance”, but more like an
“equivalent output capacitance” of some 25 to 30pF, having to include the effect
of internal phase delays. This value varies to some extent with temperature,
process, and frequency.
1.12.2.7 Placement of Components
Noise glitches arising at PADA or PADY pins at the wrong time can cause a
miscount in the internal clock-generating circuitry. These kinds of glitches can be
produced through capacitive coupling between the oscillator components and
PCB traces carrying digital signals with fast rise and fall times.
For this reason, the oscillator components should be mounted close to the chip
and have short, direct traces to the PADA, PADY, and VSS pins.
If possible, use dedicated VSS and VDD pin for only crystal feedback amplifier.
1.12.3 TROUBLESHOOTING OSCILLATOR PROBLEMS
The first thing to consider in case of difficulty is that there may be significant
differences in stray caps between the test jig and the actual application,
particularly if the actual application is on a multi-layer board.
Noise glitches, that are not present in the test jig but are in the application board,
are another possibility. Capacitive coupling between the oscillator circuitry and
other signal has already been mentioned as a source of miscounts in the internal
clocking circuitry. Inductive coupling is also doubtful, if there is strong current
nearby. These problems are a function of the PCB layout.
Surrounding oscillator components with “quit” traces (for example, VCC and
ground) will alleviate capacitive coupling to signals having fast transition time. To
minimize inductive coupling, the PCB layout should minimize the areas of the
loops formed by oscillator components.
The loops demanding to be checked are as follows:
PADA through the resonator to PADY;
PADA through C1 to the VSS pin;
PADY through C2 to the VSS pin.
It is not unusual to find that the ground ends of C1 and C2 eventually connect up
to the VSS pin only after looping around the farthest ends of the board. Not good.
Finally, it should not be overlooked that software problems sometimes imitate the
symptoms of a slow-starting oscillator or incorrect frequency. Never
underestimate the perversity of a software problem.
2
Electrical Characteristics
Contents
DC Electrical Characteristics.........................................................................................2-1
ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS
Samsung ASIC 2-1 STDM110
DC ELECTRICAL CHARACTERISTICS
VDD = 3.3 ± 0.3V, TA = -40 to 85°C, VEXT = 5 ± 0.25V (In case of 5V tolerant)
Symbol Parameter Condition Min Type Max Unit
VIH High level input voltage VLVCMOS interface 0.7VDD
LVTTL interface 2.0
VIL Low level input voltage VLVCMOS interface 0.3VDD
LVTTL interface 0.8
VT Switching threshold LVCMOS 0.5VDD
V
LVTTL 1.4
VT + Schmitt trigger, positive-going
threshold LVCMOS/LVTTL 2.0
VT - Schmitt trigger, negative-going
threshold LVCMOS/LVTTL 0.8
VHVT + - VT - Schmitt-trigger 0.5 0.575 0.65
IIH High level input current µAInput buffer VIN = VDD –10 10
Input buffer with pull-down 10 33 60
IIL Low level input current µAInput buffer VIN = VSS –10 10
Input buffer with pull-up –60 –33 –10
VOH High level output voltage
V
Type B1 to B12Note1 IOH = –1µAV
DD – 0.05
Type B1 IOH = –1mA
2.4
Type B2 IOH = –2mA
Type B3 IOH = –3mA
Type B4 IOH = –4mA
Type B6 IOH = –6mA
Type B8 IOH = –8mA
Type B10 IOH = –10mA
Type B12 IOH = –12mA
VOL Low level output voltage
V
Type B1 to B12Note1 IOL = 1µA 0.05
Type B1 IOL = 1mA
0.4
Type B2 IOL = 2mA
Type B3 IOL = 3mA
Type B4 IOL = 4mA
Type B6 IOL = 6mA
Type B8 IOL = 8mA
Type B10 IOL = 10mA
Type B12 IOL = 12mA
IOZ Tri-state output leakage current VOUT =VSS or VEXT –10 10 µA
IOS Output short circuit current VDD = 3.6V,VO =V
DD 55 mA
VDD = 3.6V,VO =V
SS –55
IDD Quiescent supply current VIN =V
SS or VDD 100Note2 µA
CIN Input capacitanceNote3 Any Input and
Bidirectional Buffers 4pF
COUT Output capacitanceNote3 Any Output Buffer 4 pF
DC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
STDM110 2-2 Samsung ASIC
VDD = 2.5 ± 0.2V, TA = -40 to 85°C (In case of general I/O)
NOTES:
1. Type B1 means 1mA output driver cells, and type B6/B12 means 6mA/12mA output driver cells.
2. This value depends on the customer design.
3. This value exclude package parasitics.
Symbol Parameter Condition Min Type Max Unit
VIH High level input voltage V
LVCMOS interface 1.7
VIL Low level input voltage V
LVCMOS interface 0.7
VT Switching threshold LVCMOS 0.5VDD
V
VT + Schmitt trigger, positive-going
threshold LVCMOS 1.9
VT- Schmitt trigger, negative-going
threshold LVCMOS 0.6
VHVT + - VT - Schmitt-trigger 0.5 0.65 0.8
IIH High level input current µAInput buffer VIN = VDD –10 10
Input buffer with pull-down 10 25 50
IIL Low level input current µAInput buffer VIN = VSS –10 10
Input buffer with pull-up –50 –25 –10
VOH High level output voltage
V
Type B1 to B12Note1 IOH = –1µAV
DD – 0.05
Type B1 IOH = –1mA
1.9
Type B2 IOH = –2mA
Type B4 IOH = –4mA
Type B6 IOH = –6mA
Type B8 IOH = –8mA
Type B10 IOH = –10mA
Type B12 IOH = –12mA
VOL Low level output voltage
V
Type B1 to B12Note1 IOL = 1µA 0.05
Type B1 IOL = 1mA
0.5
Type B2 IOL = 2mA
Type B4 IOL = 4mA
Type B6 IOH = 6mA
Type B8 IOH = 8mA
Type B10 IOH = 10mA
Type B12 IOH = 12mA
IOZ Tri-state output leakage current VOUT =VSS or VEXT –10 10 µA
IOS Output short circuit current VDD = 3.6V,VO =V
DD 55 mA
VDD = 3.6V,VO =V
SS –55
IDD Quiescent supply current VIN =V
SS or VDD 100Note2 µA
CIN Input capacitanceNote3 Any Input and
Bidirectional Buffers 4pF
COUT Output capacitanceNote3 Any Output Buffer 4 pF
ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS
Samsung ASIC 2-3 STDM110
Absolute Maximum Ratings
Recommended Operating Conditions
Symbol Parameter Rating Unit
VDD DC supply voltage 2.5V VDD 3.6
V
3.3V VDD 4.6
VIN DC input voltage 2.5V input buffer 3.6
3.3V input buffer 4.6
3.3V interface/5V tolerant input buffer 6.5
VOUT DC output voltage 2.5V output buffer 3.6
3.3V output buffer 4.6
3.3V interface/5V tolerant output buffer 6.5
Ilatch Latch-up current ±200 mA
TSTG Storage temperature – 65 to 150 °C
Symbol Parameter Rating Unit
Min Max
VDD
DC Supply Voltage for
Internal (=VDDIN)2.5V VDD 2.3 2.7
V
DC Supply Voltage for
I/O Block (=VDDIO)2.5V VDD 2.3 2.7
3.3V VDD 3.0 3.6
DC Supply Voltage for
Analog Core (=VDDA)2.5V VDD 2.5 – 5% 2.5 + 5%
3.3V VDD 3.3 – 5% 3.3 + 5%
VIN DC Input Voltage 2.5V input buffer –0.2 VDDIO+0.2
3.3V input buffer –0.3 VDDIO+0.3
3.3V interface / 5V tolerant input buffer –0.3 5.5
VOUT DC Output Voltage 2.5V output buffer –0.2 VDDIO+0.2
3.3V output buffer –0.3 VDDIO+0.3
3.3V interface / 5V tolerant output buffer –0.3 5.5
TACommercial temperature range 0 to 70 °C
Industrial temperature range –40 to 85
3
Internal Macrocells
Contents
Overview ............................................................................................................................3-1
Summary Tables.................................................................................................................3-2
Logic Cells..........................................................................................................................3-7
Flip-Flops............................................................................................................................3-300
Latches...............................................................................................................................3-400
Bus Holder..........................................................................................................................3-437
Internal Clock Drivers.........................................................................................................3-438
Decoders............................................................................................................................3-440
Adders................................................................................................................................3-449
Multiplexers ........................................................................................................................3-459
INTERNAL MACROCELLS OVERVIEW
Samsung ASIC 3-1 STDM110
OVERVIEW
The third chapter contains data sheets of STDM110 logic cells, flip-flops, latches, bus holder, internal clock
drivers, decoders, adders and multiplexers.
The electrical characteristics of each cell follow its basic cell data.
Summary tables in the following pages list the whole STDM110 internal macrocells by the type and show
their reference page numbers for your convenience. Moreover, you can find the more detailed description
tables on the leading pages of each category.
SUMMARY TABLES INTERNAL MACROCELLS
STDM110 3-2 Samsung ASIC
SUMMARY TABLES
Logic Cells
Cell Type Cell Name Page
AND Cells AD2DH/AD2/AD2D2/AD2D4 3-17
AD3DH/AD3/AD3D2/AD3D4 3-19
AD4DH/AD4/AD4D2/AD4D4 3-21
AD5/AD5D2/AD5D4 3-24
NAND Cells ND2DH/ND2/ND2D2/ND2D4 3-27
ND3DH/ND3/ND3D2/ND3D4 3-29
ND4DH/ND4/ND4D2/ND4D2B/ND4D4 3-32
ND5/ND5D2/ND5D4 3-35
ND6/ND6D2/ND6D4 3-38
ND8/ND8D2/ND8D4 3-42
NOR Cells NR2DH/NR2/NR2D2/NR2D2B/NR2D4/NR2A 3-46
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A 3-49
NR4DH/NR4/NR4D2/NR4D4 3-53
NR5/NR5D2/NR5D4 3-56
NR6/NR6D2/NR6D4 3-60
NR8/NR8D2/NR8D4 3-64
OR Cells OR2DH/OR2/OR2D2/OR2D4 3-68
OR3DH/OR3/OR3D2/OR3D4 3-70
OR4DH/OR4/OR4D2/OR4D4 3-73
OR5/OR5D2/OR5D4 3-76
Exclusive-NOR Cells XN2/XN2D2/XN2D4 3-80
XN3/XN3D2/XN3D4 3-82
Exclusive-OR Cells XO2/XO2D2/XO2D4 3-84
XO3/XO3D2/XO3D4 3-86
Combinational Cells of AND and NOR AO21DH/AO21/AO21D2/AO21D2B/AO21D4 3-88
AO211DH/AO211/AO211D2/AO211D2B/AO211D4 3-91
AO2111/AO2111D2 3-94
AO22DH/AO22/AO22D2/AO22D2B/AO22D4 3-97
AO22DHA/AO22A/AO22D2A/AO22D4A 3-100
AO221/AO221D2/AO221D4 3-103
AO222/AO222D2/AO222D2B/AO222D4 3-107
AO222A/AO222D2A/AO222D4A 3-112
AO2222/AO2222D2/AO2222D4 3-114
AO31DH/AO31/AO31D2/AO31D4 3-118
AO311/AO311D2/AO311D4 3-121
AO3111/AO3111D2 3-125
AO32/AO32D2/AO32D4 3-128
INTERNAL MACROCELLS SUMMARY TABLES
Samsung ASIC 3-3 STDM110
AO321/AO321D2/AO321D4 3-132
AO322/AO322D2/AO322D4 3-136
AO33/AO33D2/AO33D4 3-140
AO331/AO331D2/AO331D4 3-144
AO332/AO332D2/AO332D4 3-148
AO4111/AO4111D2 3-152
Combinational Cells of OR and NAND OA21DH/OA21/OA21D2/OA21D2B/OA21D4 3-155
OA211DH/OA211/OA211D2/OA211D2B/OA211D4 3-158
OA2111/OA2111D2 3-161
OA22DH/OA22/OA22D2/OA22D2B/OA22D4 3-164
OA22DHA/OA22A/OA22D2A/OA22D4A 3-167
OA221/OA221D2/OA221D4 3-170
OA222/OA222D2/OA222D2B/OA222D4 3-174
OA2222/OA2222D2/OA2222D4 3-179
OA31DH/OA31/OA31D2/OA31D4 3-183
OA311/OA311D2/OA311D4 3-186
OA3111/OA3111D2 3-190
OA32/OA32D2/OA32D4 3-193
OA321/OA321D2/OA321D4 3-197
OA322/OA322D2/OA322D4 3-201
OA33/OA33D2/OA33D4 3-205
OA331/OA331D2/OA331D4 3-209
OA332/OA332D2/OA332D4 3-213
OA4111/OA4111D2 3-217
Complex Cells SCG1/SCG1D2 3-220
SCG2/SCG2D2 3-223
SCG3/SCGD2 3-225
SCG4/SCG4D2 3-228
SCG5/SCG5D2 3-231
SCG6/SCG6D2 3-234
SCG7/SCG7D2 3-236
SCG8/SCG8D2 3-239
SCG9/SCG9D2 3-241
SCG10/SCG10D2 3-243
SCG11/SCG11D2 3-245
SCG12/SCG12D2 3-248
SCG13/SCG13D2 3-250
SCG14/SCG14D2 3-252
SCG15/SCG15D2 3-254
SCG16/SCG16D2 3-256
SCG17/SCG17D2 3-258
Cell Type Cell Name Page
SUMMARY TABLES INTERNAL MACROCELLS
STDM110 3-4 Samsung ASIC
Flip-Flops
Complex Cells SCG18/SCG18D2 3-260
SCG19/SCG19D2 3-263
SCG20/SCG20D2 3-265
SCG21/SCG21D2 3-267
SCG22/SCG22D2 3-269
Delay Cells DL1D2/DL1D4 3-271
DL2D2/DL2D4 3-272
DL3D2/DL3D4 3-273
DL4D2/DL4D4 3-274
DL5D2/DL5D4 3-275
DL10D2/DL10D4 3-276
Inverters IVDH/IV/IVD2/IVD3/IVD4/IVD6/IVD8/IVD16 3-277
IVCD(11/13)/IVCD(22/26)/IVCD44 3-280
Inverting Tri-State Buffers IVT/IVTD2/IVTD4/IVTD8/IVTD16 3-282
IVTN/IVTND2/IVTND4/IVTND8/IVTND16 3-284
Non-Inverting Buffers NIDH/NID/NID2/NID3/NID4/NID6/NID8/NID16 3-286
Clock Buffers for OAK core only OAK_NID10P/OAK_NID 20P 3-289
Non-Inverting Tri-State Buffers NIT/NITD2/NITD4/NITD8/NITD16 3-290
NITN/NITND2/NITND4/NITND8/NITND16 3-293
2 Phase Clock Generator Buffers for
OAK core only OAK_DUCLK10/OAK_DUCLK16 3-296
Clock Tree Synthesis Buffers CTSB/CTSBD2/CTSBD3/CTSBD4/CTSBD6/
CTSBD8/CTSBD16 3-298
Cell Type Cell Name Page
D Flip-Flop FD1/FD1D2 3-304
FD1CS/FD1CSD2 3-306
FD1S/FD1SD2 3-308
FD1SQ/FD1SQD2 3-310
FD1Q/FD1QD2 3-312
D Flip-Flop with Reset FD2/FD2D2 3-314
FD2CS/FD2CSD2 3-316
FD2S/FD2SD2 3-320
FD2SQ/FD2SQD2 3-322
FD2Q/FD2QD2 3-324
D Flip-Flop with Set FD3/FD3D2 3-326
FD3CS/FD3CSD2 3-328
FD3S/FD3SD2 3-332
FD3SQ/FD3SQD2 3-334
FD3Q/FD3QD2 3-336
Cell Type Cell Name Page
INTERNAL MACROCELLS SUMMARY TABLES
Samsung ASIC 3-5 STDM110
Latches
D Flip-Flop with Reset, Set FD4/FD4D2 3-338
FD4CS/FD4CSD2 3-341
FD4S/FD4SD2 3-345
FD4SQ/FD4SQD2 3-349
FD4Q/FD4QD2 3-352
D Flip-Flop with Negative Edge Trigger FD5/FD5D2 3-354
FD5S/FD5SD2 3-356
FD6/FD6D2 3-358
FD6S/FD6SD2 3-360
FD7/FD7D2 3-362
FD7S/FD7SD2 3-364
FD8/FD8D2 3-366
FD8S/FD8SD2 3-369
D Flip-Flop with Synchronous Clear FDS2/FDS2D2 3-373
FDS2CS/FDS2CSD2 3-375
FDS2S/FDS2SD2 3-377
FDS3/FDS3D2 3-379
FDS3CS/FDS3CSD2 3-381
FDS3S/FDS3SD2 3-383
JK Flip-Flop FJ1/FJ1D2 3-385
FJ1S/FJ1SD2 3-387
FJ2/FJ2D2 3-389
FJ2S/FJ2SD2 3-391
FJ4/FJ4D2 3-393
FJ4S/FJ4SD2 3-396
Toggle Flip-Flop FT2/FT2D2 3-399
Cell Type Cell Name Page
D Latch with Active High LD1/LD1D2 3-402
LD1A/LD1D2A 3-404
LD1Q/LD1QD2 3-406
LD2/LD2D2 3-408
LD2Q/LD2QD2 3-411
LD3/LD3D2 3-413
LD4/LD4D2 3-416
D Latch with Active Low LD5/LD5D2 3-419
LD5Q/LD5QD2 3-421
LD6/LD6D2 3-423
LD6Q/LD6QD2 3-426
Cell Type Cell Name Page
SUMMARY TABLES INTERNAL MACROCELLS
STDM110 3-6 Samsung ASIC
Bus Holder
Internal Clock Drivers
Decoders
Adders
Multiplexers
LD7/LD7D2 3-428
LD8/LD8D2 3-431
SR Latch LS0/LS0D2 3-434
LS1/LS1D2 3-436
Cell Type Cell Name Page
Bus Holder BUSHOLDER 3-437
Cell Type Cell Name Page
Internal Clock Drivers CK2/CK4/CK6/CK8 3-438
Cell Type Cell Name Page
Non-Inverting Decoder DC4 3-441
Inverting Decoders DC4I 3-443
DC8I 3-445
Cell Type Cell Name Page
Full Adders FADH/FA/FAD2 3-450
Half Adders HADH/HA/HAD2 3-453
Complex Cells SCG23/SCG23D2 3-456
Cell Type Cell Name Page
2 > 1 Non-Inverting Mux MX2DH/MX2/MX2D2/MX2D4 3-460
MX2X4 3-463
2 > 1 Inverting Mux MX2IDH/MX2I/MX2ID2/MX2ID4 3-466
MX2IDHA/MX2IA/MX2ID2A/MX2ID4A 3-469
MX2IX4 3-472
3 > 1 Inverting Mux MX3I/MX3ID2/MX3ID4 3-475
4 > 1 Non-Inverting Mux MX4/MX4D2/MX4D4 3-479
8 > 1 Non-Inverting Mux MX8/MX8D2/MX8D4 3-483
Cell Type Cell Name Page
Samsung ASIC 3-7 STDM110
LOGIC CELLS
Cell Names & Function Descriptions
Cell Name Function Description
AD2DH 2-Input AND with 0.5X Drive
AD2 2-Input AND with 1X Drive
AD2D2 2-Input AND with 2X Drive
AD2D4 2-Input AND with 4X Drive
AD3DH 3-Input AND with 0.5X Drive
AD3 3-Input AND with 1X Drive
AD3D2 3-Input AND with 2X Drive
AD3D4 3-Input AND with 4X Drive
AD4DH 4-Input AND with 0.5X Drive
AD4 4-Input AND with 1X Drive
AD4D2 4-Input AND with 2X Drive
AD4D4 4-Input AND with 4X Drive
AD5 5-Input AND with 1X Drive
AD5D2 5-Input AND with 2X Drive
AD5D4 5-Input AND with 4X Drive
ND2DH 2-Input NAND with 0.5X Drive
ND2 2-Input NAND with 1X Drive
ND2D2 2-Input NAND with 2X Drive
ND2D4 2-Input NAND with 4X Drive
ND3DH 3-Input NAND with 0.5X Drive
ND3 3-Input NAND with 1X Drive
ND3D2 3-Input NAND with 2X Drive
ND3D4 3-Input NAND with 4X Drive
ND4DH 4-Input NAND with 0.5X Drive
ND4 4-Input NAND with 1X Drive
ND4D2 4-Input NAND with 2X Drive
ND4D2B 4-Input NAND with 2X (Buffered) Drive
ND4D4 4-Input NAND with 4X Drive
ND5 5-Input NAND with 1X Drive
ND5D2 5-Input NAND with 2X Drive
ND5D4 5-Input NAND with 4X Drive
ND6 6-Input NAND with 1X Drive
ND6D2 6-Input NAND with 2X Drive
ND6D4 6-Input NAND with 4X Drive
ND8 8-Input NAND with 1X Drive
ND8D2 8-Input NAND with 2X Drive
ND8D4 8-Input NAND with 4X Drive
STDM110 3-8 Samsung ASIC
NR2DH 2-Input NOR with 0.5X Drive
NR2 2-Input NOR with 1X Drive
NR2D2 2-Input NOR with 2X Drive
NR2D2B 2-Input NOR with 2X (Buffered) Drive
NR2D4 2-Input NOR with 4X Drive
NR2A NR2 with 2X P-Transistor, 1X N-Transistor
NR3DH 3-Input NOR with 0.5X Drive
NR3 3-Input NOR with 1X Drive
NR3D2 3-Input NOR with 2X Drive
NR3D2B 3-Input NOR with 2X (Buffered) Drive
NR3D4 3-Input NOR with 4X Drive
NR3A NR3 with 2X P-Transistor, 1X N-Transistor
NR4DH 4-Input NOR with 0.5X Drive
NR4 4-Input NOR with 1X Drive
NR4D2 4-Input NOR with 2X Drive
NR4D4 4-Input NOR with 4X Drive
NR5 5-Input NOR with 1X Drive
NR5D2 5-Input NOR with 2X Drive
NR5D4 5-Input NOR with 4X Drive
NR6 6-Input NOR with 1X Drive
NR6D2 6-Input NOR with 2X Drive
NR6D4 6-Input NOR with 4X Drive
NR8 8-Input NOR with 1X Drive
NR8D2 8-Input NOR with 2X Drive
NR8D4 8-Input NOR with 4X Drive
OR2DH 2-Input OR with 0.5X Drive
OR2 2-Input OR with 1X Drive
OR2D2 2-Input OR with 2X Drive
OR2D4 2-Input OR with 4X Drive
OR3DH 3-Input OR with 0.5X Drive
OR3 3-Input OR with 1X Drive
OR3D2 3-Input OR with 2X Drive
OR3D4 3-Input OR with 4X Drive
OR4DH 4-Input OR with 0.5X Drive
OR4 4-Input OR with 1X Drive
OR4D2 4-Input OR with 2X Drive
OR4D4 4-Input OR with 4X Drive
Cell Name Function Description
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
Samsung ASIC 3-9 STDM110
OR5 5-Input OR with 1X Drive
OR5D2 5-Input OR with 2X Drive
OR5D4 5-Input OR with 4X Drive
XN2 2-Input Exclusive-NOR with 1X Drive
XN2D2 2-Input Exclusive-NOR with 2X Drive
XN2D4 2-Input Exclusive-NOR with 4X Drive
XN3 3-Input Exclusive-NOR with 1X Drive
XN3D2 3-Input Exclusive-NOR with 2X Drive
XN3D4 3-Input Exclusive-NOR with 4X Drive
XO2 2-Input Exclusive-OR with 1X Drive
XO2D2 2-Input Exclusive-OR with 2X Drive
XO2D4 2-Input Exclusive-OR with 4X Drive
XO3 3-Input Exclusive-OR with 1X Drive
XO3D2 3-Input Exclusive-OR with 2X Drive
XO3D4 3-Input Exclusive-OR with 4X Drive
AO21DH 2-AND into 2-NOR with 0.5X Drive
AO21 2-AND into 2-NOR with 1X Drive
AO21D2 2-AND into 2-NOR with 2X Drive
AO21D2B 2-AND into 2-NOR with 2X(Buffered) Drive
AO21D4 2-AND into 2-NOR with 4X Drive
AO211DH 2-AND into 3-NOR with 0.5X Drive
AO211 2-AND into 3-NOR with 1X Drive
AO211D2 2-AND into 3-NOR with 2X Drive
AO211D2B 2-AND into 3-NOR with 2X(Buffered) Drive
AO211D4 2-AND into 3-NOR with 4X Drive
AO2111 2-AND into 4-NOR with 1X Drive
AO2111D2 2-AND into 4-NOR with 2X Drive
AO22DH Two 2-ANDs into 2-NOR with 0.5X Drive
AO22 Two 2-ANDs into 2-NOR with 1X Drive
AO22D2 Two 2-ANDs into 2-NOR with 2X Drive
AO22D2B Two 2-ANDs into 2-NOR with 2X(Buffered) Drive
AO22D4 Two 2-ANDs into 2-NOR with 4X Drive
AO22DHA 2-AND and 2-NOR into 2-NOR with 0.5X Drive
AO22A 2-AND and 2-NOR into 2-NOR with 1X Drive
AO22D2A 2-AND and 2-NOR into 2-NOR with 2X Drive
AO22D4A 2-AND and 2-NOR into 2-NOR with 4X Drive
Cell Name Function Description
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
STDM110 3-10 Samsung ASIC
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
AO221 Two 2-ANDs into 3-NOR with 1X Drive
AO221D2 Two 2-ANDs into 3-NOR with 2X Drive
AO221D4 Two 2-ANDs into 3-NOR with 4X Drive
AO222 Three 2-ANDs into 3-NOR with 1X Drive
AO222D2 Three 2-ANDs into 3-NOR with 2X Drive
AO222D2B Three 2-ANDs into 3-NOR with 2X(Buffered) Drive
AO222D4 Three 2-ANDs into 3-NOR with 4X Drive
AO222A Inverting 2-of-3 Majority with 1X Drive
AO222D2A Inverting 2-of-3 Majority with 2X Drive
AO222D4A Inverting 2-of-3 Majority with 4X Drive
AO2222 Four 2-ANDs into 4-NOR with 1X Drive
AO2222D2 Four 2-ANDs into 4-NOR with 2X Drive
AO2222D4 Four 2-ANDs into 4-NOR with 4X Drive
AO31DH 3-AND into 2-NOR with 0.5X Drive
AO31 3-AND into 2-NOR with 1X Drive
AO31D2 3-AND into 2-NOR with 2X Drive
AO31D4 3-AND into 2-NOR with 4X Drive
AO311 3-AND into 3-NOR with 1X Drive
AO311D2 3-AND into 3-NOR with 2X Drive
AO311D4 3-AND into 3-NOR with 4X Drive
AO3111 3-AND into 4-NOR with 1X Drive
AO3111D2 3-AND into 4-NOR with 2X Drive
AO32 3-AND and 2-AND into 2-NOR with 1X Drive
AO32D2 3-AND and 2-AND into 2-NOR with 2X Drive
AO32D4 3-AND and 2-AND into 2-NOR with 4X Drive
AO321 3-AND and 2-AND into 3-NOR with 1X Drive
AO321D2 3-AND and 2-AND into 3-NOR with 2X Drive
AO321D4 3-AND and 2-AND into 3-NOR with 4X Drive
AO322 3-AND and Two 2-ANDs into 3-NOR with 1X Drive
AO322D2 3-AND and Two 2-ANDs into 3-NOR with 2X Drive
AO322D4 3-AND and Two 2-ANDs into 3-NOR with 4X Drive
AO33 Two 3-ANDs into 2-NOR with 1X Drive
AO33D2 Two 3-ANDs into 2-NOR with 2X Drive
AO33D4 Two 3-ANDs into 2-NOR with 4X Drive
AO331 Two 3-ANDs into 3-NOR with 1X Drive
AO331D2 Two 3-ANDs into 3-NOR with 2X Drive
AO331D4 Two 3-ANDs into 3-NOR with 4X Drive
Cell Name Function Description
Samsung ASIC 3-11 STDM110
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
AO332 Two 3-ANDs and 2-AND into 3-NOR
AO332D2 Two 3-ANDs and 2-AND into 3-NOR with 2X Drive
AO332D4 Two 3-ANDs and 2-AND into 3-NOR with 4X Drive
AO4111 4-AND into 4-NOR with 1X Drive
AO4111D2 4-AND into 4-NOR with 2X Drive
OA21DH 2-OR into 2-NAND with 0.5X Drive
OA21 2-OR into 2-NAND with 1X Drive
OA21D2 2-OR into 2-NAND with 2X Drive
OA21D2B 2-OR into 2-NAND with 2X(Buffered) Drive
OA21D4 2-OR into 2-NAND with 4X Drive
OA211DH 2-OR into 3-NAND with 0.5X Drive
OA211 2-OR into 3-NAND with 1X Drive
OA211D2 2-OR into 3-NAND with 2X Drive
OA211D2B 2-OR into 3-NAND with 2X(Buffered) Drive
OA211D4 2-OR into 3-NAND with 4X Drive
OA2111 2-OR into 4-NAND with 1X Drive
OA2111D2 2-OR into 4-NAND with 2X Drive
OA22DH Two 2-ORs into 2-NAND with 0.5X Drive
OA22 Two 2-ORs into 2-NAND with 1X Drive
OA22D2 Two 2-ORs into 2-NAND with 2X Drive
OA22D2B Two 2-ORs into 2-NAND with 2X(Buffered) Drive
OA22D4 Two 2-ORs into 2-NAND with 4X Drive
OA22DHA 2-OR and 2-NAND into 2-NAND with 0.5X Drive
OA22A 2-OR and 2-NAND into 2-NAND with 1X Drive
OA22D2A 2-OR and 2-NAND into 2-NAND with 2X Drive
OA22D4A 2-OR and 2-NAND into 2-NAND with 4X Drive
OA221 Two 2-ORs into 3-NAND with 1X Drive
OA221D2 Two 2-ORs into 3-NAND with 2X Drive
OA221D4 Two 2-ORs into 3-NAND with 4X Drive
OA222 Three 2-ORs into 3-NAND with 1X Drive
OA222D2 Three 2-ORs into 3-NAND with 2X Drive
OA222D2B Three 2-ORs into 3-NAND with 2X(Buffered) Drive
OA222D4 Three 2-ORs into 3-NAND with 4X Drive
OA2222 Four 2-ORs into 4-NAND with 1X Drive
OA2222D2 Four 2-ORs into 4-NAND with 2X Drive
OA2222D4 Four 2-ORs into 4-NAND with 4X Drive
Cell Name Function Description
STDM110 3-12 Samsung ASIC
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
OA31DH 3-OR into 2-NAND with 0.5X Drive
OA31 3-OR into 2-NAND with 1X Drive
OA31D2 3-OR into 2-NAND with 2X Drive
OA31D4 3-OR into 2-NAND with 4X Drive
OA311 3-OR into 3-NAND with 1X Drive
OA311D2 3-OR into 3-NAND with 2X Drive
OA311D4 3-OR into 3-NAND with 4X Drive
OA3111 3-OR into 4-NAND with 1X Drive
OA3111D2 3-OR into 4-NAND with 2X Drive
OA32 3-OR and 2-OR into 2-NAND with 1X Drive
OA32D2 3-OR and 2-OR into 2-NAND with 2X Drive
OA32D4 3-OR and 2-OR into 2-NAND with 4X Drive
OA321 3-OR and 2-OR into 3-NAND with 1X Drive
OA321D2 3-OR and 2-OR into 3-NAND with 2X Drive
OA321D4 3-OR and 2-OR into 3-NAND with 4X Drive
OA322 3-OR and Two 2-ORs into 3-NAND with 1X Drive
OA322D2 3-OR and Two 2-ORs into 3-NAND with 2X Drive
OA322D4 3-OR and Two 2-ORs into 3-NAND with 4X Drive
OA33 Two 3-ORs into 2-NAND with 1X Drive
OA33D2 Two 3-ORs into 2-NAND with 2X Drive
OA33D4 Two 3-ORs into 2-NAND with 4X Drive
OA331 Two 3-ORs into 3-NAND with 1X Drive
OA331D2 Two 3-ORs into 3-NAND with 2X Drive
OA331D4 Two 3-ORs into 3-NAND with 4X Drive
OA332 Two 3-ORs and 2-OR into 3-NAND with 1X Drive
OA332D2 Two 3-ORs and 2-OR into 3-NAND with 2X Drive
OA332D4 Two 3-ORs and 2-OR into 3-NAND with 4X Drive
OA4111 4-OR into 4-NAND with 1X Drive
OA4111D2 4-OR into 4-NAND with 2X Drive
SCG1 2-NAND and two (2-AND into 2-NOR)s into 3-NAND
SCG1D2 2-NAND and two (2-AND into 2-NOR)s into 3-NAND with 2X Drive
SCG2 Two 2-ANDs into 2-OR
SCG2D2 Two 2-ANDs into 2-OR with 2X Drive
SCG3 Two 2-NANDs into 3-NAND
SCG3D2 Two 2-NANDs into 3-NAND with 2X Drive
SCG4 Two (two 2-ANDs into 2-NOR)s into 2-NAND
SCG4D2 Two (two 2-ANDs into 2-NOR)s into 2-NAND with 2X Drive
Cell Name Function Description
Samsung ASIC 3-13 STDM110
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
SCG5 Three 2-ANDs into 3-OR
SCG5D2 Three 2-ANDs into 3-OR with 2X Drive
SCG6 2-AND into 2-OR
SCG6D2 2-AND into 2-OR with 2X Drive
SCG7 2-NAND and (2-AND into 2-NOR) into 2-NAND
SCG7D2 2-NAND and (2-AND into 2-NOR) into 2-NAND with 2X Drive
SCG8 2-AND into 3-OR
SCG8D2 2-AND into 3-OR with 2X Drive
SCG9 2-OR into 2-AND
SCG9D2 2-OR into 2-AND with 2X Drive
SCG10 Two 2-ORs into 2-AND
SCG10D2 Two 2-ORs into 2-AND with 2X Drive
SCG11 Two 2-NORs into 3-NOR
SCG11D2 Two 2-NORs into 3-NOR with 2X Drive
SCG12 2-NAND into 2-NOR
SCG12D2 2-NAND into 2-NOR with 2X Drive
SCG13 2-NOR into 2-NAND
SCG13D2 2-NOR into 2-NAND with 2X Drive
SCG14 2-NAND into 2-NAND
SCG14D2 2-NAND into 2-NAND with 2X Drive
SCG15 2-NAND into 3-NAND
SCG15D2 2-NAND into 3-NAND with 2X Drive
SCG16 2-OR with one inverted input into 2-NAND
SCG16D2 2-OR with one inverted input into 2-NAND with 2X Drive
SCG17 2-AND into 2-NOR into 2-NAND
SCG17D2 2-AND into 2-NOR into 2-NAND with 2X Drive
SCG18 2-AND into 2-NOR into 3-NAND
SCG18D2 2-AND into 2-NOR into 3-NAND with 2X Drive
SCG19 2-AND into 2-AND into 2-NOR
SCG19D2 2-AND into 2-AND into 2-NOR with 2X Drive
SCG20 2-NOR into 2-NOR
SCG20D2 2-NOR into 2-NOR with 2X Drive
SCG21 2-NOR into 3-NOR
SCG21D2 2-NOR into 3-NOR with 2X Drive
SCG22 2-NAND into 2-OR into 2-NAND
SCG22D2 2-NAND into 2-OR into 2-NAND with 2X Drive
SCG23 Full Adder with one inverted input with 1X Drive
SCG23D2 Full Adder with one inverted input with 2X Drive
Cell Name Function Description
STDM110 3-14 Samsung ASIC
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
DL1D2 1ns Delay Cell with 2X Drive
DL1D4 1ns Delay Cell with 4X Drive
DL2D2 2ns Delay Cell with 2X Drive
DL2D4 2ns Delay Cell with 4X Drive
DL3D2 3ns Delay Cell with 2X Drive
DL3D4 3ns Delay Cell with 4X Drive
DL4D2 4ns Delay Cell with 2X Drive
DL4D4 4ns Delay Cell with 4X Drive
DL5D2 5ns Delay Cell with 2X Drive
DL5D4 5ns Delay Cell with 4X Drive
DL10D2 10ns Delay Cell with 2X Drive
DL10D4 10ns Delay Cell with 4X Drive
IVDH Inverter with 0.5X Drive
IV Inverter with 1X Drive
IVD2 Inverter with 2X Drive
IVD3 Inverter with 3X Drive
IVD4 Inverter with 4X Drive
IVD6 Inverter with 6X Drive
IVD8 Inverter with 8X Drive
IVD16 Inverter with 16X Drive
IVCD11 1X Inverter into 1X Inverter
IVCD13 1X Inverter into 3X Inverter
IVCD22 2X Inverter into 2X Inverter
IVCD26 2X Inverter into 6X Inverter
IVCD44 4X Inverter into 4X Inverter
IVT Inverting Tri-State Buffer with Enable High, 1X Drive
IVTD2 Inverting Tri-State Buffer with Enable High, 2X Drive
IVTD4 Inverting Tri-State Buffer with Enable High, 4X Drive
IVTD8 Inverting Tri-State Buffer with Enable High, 8X Drive
IVTD16 Inverting Tri-State Buffer with Enable High, 16X Drive
IVTN Inverting Tri-State Buffer with Enable Low, 1X Drive
IVTND2 Inverting Tri-State Buffer with Enable Low, 2X Drive
IVTND4 Inverting Tri-State Buffer with Enable Low, 4X Drive
IVTND8 Inverting Tri-State Buffer with Enable Low, 8X Drive
IVTND16 Inverting Tri-State Buffer with Enable Low, 16X Drive
NIDH Non-Inverting Buffer with 0.5X Drive
NID Non-Inverting Buffer with 1X Drive
NID2 Non-Inverting Buffer with 2X Drive
Cell Name Function Description
Samsung ASIC 3-15 STDM110
LOGIC CELLS
Cell Names & Function Descriptions (Continued)
NID3 Non-Inverting Buffer with 3X Drive
NID4 Non-Inverting Buffer with 4X Drive
NID6 Non-Inverting Buffer with 6X Drive
NID8 Non-Inverting Buffer with 8X Drive
NID16 Non-Inverting Buffer with 16X Drive
OAK_NID10P Clock Buffer for 10pF Drive (for OAK core only)
OAK_NID20P Clock Buffer for 20pF Drive (for OAK core only)
NIT Non-Inverting Tri-State Buffer with Enable High, 1X Drive
NITD2 Non-Inverting Tri-State Buffer with Enable High, 2X Drive
NITD4 Non-Inverting Tri-State Buffer with Enable High, 4X Drive
NITD8 Non-Inverting Tri-State Buffer with Enable High, 8X Drive
NITD16 Non-Inverting Tri-State Buffer with Enable High, 16X Drive
NITN Non-Inverting Tri-State Buffer with Enable Low, 1X Drive
NITND2 Non-Inverting Tri-State Buffer with Enable Low, 2X Drive
NITND4 Non-Inverting Tri-State Buffer with Enable Low, 4X Drive
NITND8 Non-Inverting Tri-State Buffer with Enable Low, 8X Drive
NITND16 Non-Inverting Tri-State Buffer with Enable Low, 16X Drive
OAK_DUCLK10 2 Phase Clock Generator (1ns Non-overlapped, for OAK core only)
OAK_DUCLK16 2 Phase Clock Generator (1.6ns Non-overlapped, for OAK core only)
CTSB Clock Tree Synthesis Buffer with 1X Drive
CTSBD2 Clock Tree Synthesis Buffer with 2X Drive
CTSBD3 Clock Tree Synthesis Buffer with 3X Drive
CTSBD4 Clock Tree Synthesis Buffer with 4X Drive
CTSBD6 Clock Tree Synthesis Buffer with 6X Drive
CTSBD8 Clock Tree Synthesis Buffer with 8X Drive
CTSBD16 Clock Tree Synthesis Buffer with 16X Drive
Cell Name Function Description
STDM110 3-16 Samsung ASIC
NOTE
Samsung ASIC 3-17 STDM110
AD2DH/AD2/AD2D2/AD2D4
2-Input AND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD2DH
AD2
Input Load (SL) Gate Count
AD2DH AD2 AD2D2 AD2D
4
AD2DH AD2 AD2D2 AD2D4
ABABABAB
0.6 0.6 0.8 0.9 0.8 0.8 1.1 1.2 1.33 1.33 1.67 2.33
A
BY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.252 0.090 + 0.081*SL 0.081 + 0.083*SL 0.073 + 0.084*SL
tF 0.196 0.072 + 0.062*SL 0.066 + 0.064*SL 0.058 + 0.065*SL
tPLH 0.267 0.188 + 0.040*SL 0.195 + 0.038*SL 0.196 + 0.038*SL
tPHL 0.259 0.188 + 0.035*SL 0.197 + 0.033*SL 0.198 + 0.033*SL
B to Y tR 0.252 0.090 + 0.081*SL 0.081 + 0.083*SL 0.073 + 0.084*SL
tF 0.198 0.074 + 0.062*SL 0.067 + 0.064*SL 0.060 + 0.065*SL
tPLH 0.264 0.185 + 0.040*SL 0.193 + 0.038*SL 0.194 + 0.038*SL
tPHL 0.279 0.207 + 0.036*SL 0.216 + 0.034*SL 0.218 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.152 0.080 + 0.036*SL 0.076 + 0.037*SL 0.070 + 0.038*SL
tF 0.128 0.068 + 0.030*SL 0.063 + 0.031*SL 0.060 + 0.032*SL
tPLH 0.214 0.174 + 0.020*SL 0.184 + 0.018*SL 0.188 + 0.017*SL
tPHL 0.217 0.178 + 0.020*SL 0.187 + 0.017*SL 0.191 + 0.017*SL
B to Y tR 0.152 0.081 + 0.036*SL 0.076 + 0.037*SL 0.070 + 0.038*SL
tF 0.129 0.068 + 0.031*SL 0.066 + 0.031*SL 0.061 + 0.032*SL
tPLH 0.211 0.171 + 0.020*SL 0.180 + 0.018*SL 0.185 + 0.017*SL
tPHL 0.235 0.196 + 0.020*SL 0.205 + 0.017*SL 0.210 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABY
000
010
100
111
STDM110 3-18 Samsung ASIC
AD2DH/AD2/AD2D2/AD2D4
2-Input AND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD2D2
AD2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.112 0.074 + 0.019*SL 0.078 + 0.018*SL 0.074 + 0.019*SL
tF 0.099 0.063 + 0.018*SL 0.070 + 0.016*SL 0.066 + 0.017*SL
tPLH 0.217 0.192 + 0.013*SL 0.203 + 0.010*SL 0.216 + 0.009*SL
tPHL 0.226 0.201 + 0.013*SL 0.212 + 0.010*SL 0.224 + 0.009*SL
B to Y tR 0.113 0.075 + 0.019*SL 0.078 + 0.018*SL 0.074 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.072 + 0.016*SL 0.068 + 0.017*SL
tPLH 0.213 0.187 + 0.013*SL 0.199 + 0.010*SL 0.212 + 0.009*SL
tPHL 0.243 0.217 + 0.013*SL 0.228 + 0.010*SL 0.242 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.078 + 0.011*SL 0.086 + 0.009*SL 0.084 + 0.009*SL
tF 0.086 0.066 + 0.010*SL 0.073 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.227 0.212 + 0.008*SL 0.220 + 0.006*SL 0.241 + 0.005*SL
tPHL 0.229 0.213 + 0.008*SL 0.221 + 0.006*SL 0.241 + 0.005*SL
B to Y tR 0.100 0.078 + 0.011*SL 0.084 + 0.009*SL 0.085 + 0.009*SL
tF 0.089 0.069 + 0.010*SL 0.075 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.222 0.207 + 0.008*SL 0.215 + 0.006*SL 0.236 + 0.005*SL
tPHL 0.244 0.228 + 0.008*SL 0.237 + 0.006*SL 0.257 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-19 STDM110
AD3DH/AD3/AD3D2/AD3D4
3-Input AND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD3DH
AD3
Input Load (SL) Gate Count
AD3DH AD3 AD3D2 AD3D4 AD3DH AD3 AD3D2 AD3D4
ABCABCABCABC
0.5 0.6 0.6 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.1 1.67 1.67 2.00 2.67
A
B
CY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.275 0.113 + 0.081*SL 0.108 + 0.082*SL 0.096 + 0.084*SL
tF 0.209 0.086 + 0.062*SL 0.081 + 0.063*SL 0.071 + 0.064*SL
tPLH 0.332 0.246 + 0.043*SL 0.264 + 0.039*SL 0.271 + 0.038*SL
tPHL 0.304 0.229 + 0.038*SL 0.244 + 0.034*SL 0.248 + 0.033*SL
B to Y tR 0.274 0.113 + 0.081*SL 0.108 + 0.082*SL 0.096 + 0.084*SL
tF 0.212 0.089 + 0.062*SL 0.085 + 0.063*SL 0.074 + 0.064*SL
tPLH 0.340 0.254 + 0.043*SL 0.272 + 0.039*SL 0.279 + 0.038*SL
tPHL 0.325 0.250 + 0.038*SL 0.265 + 0.034*SL 0.270 + 0.033*SL
C to Y tR 0.274 0.113 + 0.081*SL 0.107 + 0.082*SL 0.096 + 0.084*SL
tF 0.216 0.093 + 0.062*SL 0.089 + 0.063*SL 0.078 + 0.064*SL
tPLH 0.343 0.257 + 0.043*SL 0.275 + 0.039*SL 0.282 + 0.038*SL
tPHL 0.344 0.267 + 0.038*SL 0.284 + 0.034*SL 0.290 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.168 0.093 + 0.037*SL 0.097 + 0.037*SL 0.092 + 0.037*SL
tF 0.136 0.073 + 0.031*SL 0.073 + 0.031*SL 0.070 + 0.032*SL
tPLH 0.258 0.213 + 0.023*SL 0.228 + 0.019*SL 0.238 + 0.018*SL
tPHL 0.249 0.207 + 0.021*SL 0.219 + 0.018*SL 0.226 + 0.017*SL
B to Y tR 0.169 0.095 + 0.037*SL 0.098 + 0.036*SL 0.093 + 0.037*SL
tF 0.139 0.078 + 0.031*SL 0.076 + 0.031*SL 0.073 + 0.032*SL
tPLH 0.266 0.220 + 0.023*SL 0.235 + 0.019*SL 0.245 + 0.018*SL
tPHL 0.269 0.227 + 0.021*SL 0.239 + 0.018*SL 0.247 + 0.017*SL
C to Y tR 0.169 0.095 + 0.037*SL 0.097 + 0.037*SL 0.092 + 0.037*SL
tF 0.142 0.080 + 0.031*SL 0.081 + 0.031*SL 0.078 + 0.031*SL
tPLH 0.267 0.222 + 0.023*SL 0.237 + 0.019*SL 0.247 + 0.018*SL
tPHL 0.287 0.243 + 0.022*SL 0.256 + 0.018*SL 0.265 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
0xx0
x0x0
xx00
1111
STDM110 3-20 Samsung ASIC
AD3DH/AD3/AD3D2/AD3D4
3-Input AND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD3D2
AD3D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.131 0.088 + 0.022*SL 0.098 + 0.019*SL 0.101 + 0.019*SL
tF 0.106 0.069 + 0.019*SL 0.078 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.267 0.237 + 0.015*SL 0.252 + 0.011*SL 0.274 + 0.009*SL
tPHL 0.256 0.228 + 0.014*SL 0.241 + 0.011*SL 0.258 + 0.009*SL
B to Y tR 0.131 0.088 + 0.021*SL 0.097 + 0.019*SL 0.101 + 0.019*SL
tF 0.110 0.073 + 0.019*SL 0.082 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.275 0.245 + 0.015*SL 0.259 + 0.011*SL 0.281 + 0.009*SL
tPHL 0.275 0.246 + 0.014*SL 0.260 + 0.011*SL 0.279 + 0.009*SL
C to Y tR 0.131 0.089 + 0.021*SL 0.097 + 0.019*SL 0.101 + 0.019*SL
tF 0.115 0.079 + 0.018*SL 0.085 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.276 0.246 + 0.015*SL 0.261 + 0.011*SL 0.283 + 0.009*SL
tPHL 0.292 0.263 + 0.015*SL 0.277 + 0.011*SL 0.296 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.123 0.099 + 0.012*SL 0.106 + 0.010*SL 0.119 + 0.009*SL
tF 0.098 0.077 + 0.010*SL 0.084 + 0.009*SL 0.092 + 0.008*SL
tPLH 0.288 0.270 + 0.009*SL 0.280 + 0.007*SL 0.310 + 0.005*SL
tPHL 0.269 0.252 + 0.008*SL 0.261 + 0.006*SL 0.286 + 0.005*SL
B to Y tR 0.123 0.100 + 0.011*SL 0.106 + 0.010*SL 0.119 + 0.009*SL
tF 0.102 0.083 + 0.010*SL 0.087 + 0.009*SL 0.096 + 0.008*SL
tPLH 0.296 0.278 + 0.009*SL 0.287 + 0.007*SL 0.317 + 0.005*SL
tPHL 0.287 0.270 + 0.009*SL 0.279 + 0.006*SL 0.305 + 0.005*SL
C to Y tR 0.124 0.101 + 0.011*SL 0.106 + 0.010*SL 0.118 + 0.009*SL
tF 0.106 0.086 + 0.010*SL 0.093 + 0.009*SL 0.101 + 0.008*SL
tPLH 0.297 0.279 + 0.009*SL 0.288 + 0.007*SL 0.318 + 0.005*SL
tPHL 0.303 0.285 + 0.009*SL 0.295 + 0.006*SL 0.322 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-21 STDM110
AD4DH/AD4/AD4D2/AD4D4
4-Input AND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AD4DH AD4 AD4D2 AD4D
4
ABCDABCDABCDABCD
0.5 0.5 0.5 0.5 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.9 0.9 0.9 1.0
Gate Counts
AD4DH AD4 AD4D2 AD4D
4
2.00 2.00 2.33 3.00
A
B
CY
D
Truth Table
ABCDY
0xxx0
x0xx0
xx0x0
xxx00
11111
STDM110 3-22 Samsung ASIC
AD4DH/AD4/AD4D2/AD4D4
4-Input AND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD4DH
AD4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.295 0.132 + 0.082*SL 0.133 + 0.081*SL 0.122 + 0.083*SL
tF 0.219 0.094 + 0.062*SL 0.093 + 0.063*SL 0.083 + 0.064*SL
tPLH 0.368 0.276 + 0.046*SL 0.302 + 0.040*SL 0.316 + 0.038*SL
tPHL 0.335 0.257 + 0.039*SL 0.276 + 0.034*SL 0.284 + 0.033*SL
B to Y tR 0.295 0.132 + 0.082*SL 0.133 + 0.081*SL 0.122 + 0.083*SL
tF 0.223 0.099 + 0.062*SL 0.097 + 0.062*SL 0.087 + 0.064*SL
tPLH 0.389 0.296 + 0.046*SL 0.323 + 0.040*SL 0.336 + 0.038*SL
tPHL 0.362 0.283 + 0.039*SL 0.303 + 0.035*SL 0.312 + 0.033*SL
C to Y tR 0.295 0.131 + 0.082*SL 0.134 + 0.081*SL 0.122 + 0.083*SL
tF 0.228 0.105 + 0.062*SL 0.103 + 0.062*SL 0.093 + 0.064*SL
tPLH 0.403 0.310 + 0.046*SL 0.336 + 0.040*SL 0.350 + 0.038*SL
tPHL 0.385 0.305 + 0.040*SL 0.326 + 0.035*SL 0.336 + 0.034*SL
D to Y tR 0.295 0.132 + 0.082*SL 0.133 + 0.081*SL 0.122 + 0.083*SL
tF 0.235 0.111 + 0.062*SL 0.111 + 0.062*SL 0.100 + 0.063*SL
tPLH 0.411 0.318 + 0.046*SL 0.344 + 0.040*SL 0.358 + 0.038*SL
tPHL 0.405 0.323 + 0.041*SL 0.346 + 0.035*SL 0.358 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.181 0.103 + 0.039*SL 0.112 + 0.037*SL 0.111 + 0.037*SL
tF 0.142 0.079 + 0.031*SL 0.080 + 0.031*SL 0.078 + 0.031*SL
tPLH 0.280 0.231 + 0.024*SL 0.248 + 0.020*SL 0.263 + 0.018*SL
tPHL 0.268 0.225 + 0.022*SL 0.238 + 0.018*SL 0.247 + 0.017*SL
B to Y tR 0.182 0.105 + 0.039*SL 0.112 + 0.037*SL 0.112 + 0.037*SL
tF 0.146 0.084 + 0.031*SL 0.086 + 0.031*SL 0.080 + 0.031*SL
tPLH 0.298 0.249 + 0.024*SL 0.266 + 0.020*SL 0.281 + 0.018*SL
tPHL 0.293 0.250 + 0.022*SL 0.263 + 0.019*SL 0.273 + 0.017*SL
C to Y tR 0.182 0.105 + 0.039*SL 0.113 + 0.037*SL 0.112 + 0.037*SL
tF 0.151 0.088 + 0.031*SL 0.092 + 0.031*SL 0.086 + 0.031*SL
tPLH 0.310 0.261 + 0.024*SL 0.278 + 0.020*SL 0.293 + 0.018*SL
tPHL 0.314 0.269 + 0.022*SL 0.284 + 0.019*SL 0.295 + 0.017*SL
D to Y tR 0.182 0.104 + 0.039*SL 0.113 + 0.037*SL 0.112 + 0.037*SL
tF 0.156 0.092 + 0.032*SL 0.098 + 0.031*SL 0.093 + 0.031*SL
tPLH 0.316 0.267 + 0.024*SL 0.285 + 0.020*SL 0.300 + 0.018*SL
tPHL 0.332 0.285 + 0.023*SL 0.301 + 0.019*SL 0.314 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-23 STDM110
AD4DH/AD4/AD4D2/AD4D4
4-Input AND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD4D2
AD4D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.146 0.101 + 0.022*SL 0.112 + 0.020*SL 0.122 + 0.019*SL
tF 0.113 0.075 + 0.019*SL 0.086 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.292 0.260 + 0.016*SL 0.276 + 0.012*SL 0.302 + 0.010*SL
tPHL 0.278 0.249 + 0.015*SL 0.263 + 0.011*SL 0.283 + 0.009*SL
B to Y tR 0.144 0.099 + 0.023*SL 0.111 + 0.020*SL 0.122 + 0.019*SL
tF 0.119 0.082 + 0.019*SL 0.091 + 0.016*SL 0.092 + 0.016*SL
tPLH 0.311 0.279 + 0.016*SL 0.295 + 0.012*SL 0.321 + 0.010*SL
tPHL 0.302 0.272 + 0.015*SL 0.287 + 0.011*SL 0.308 + 0.009*SL
C to Y tR 0.145 0.100 + 0.023*SL 0.112 + 0.020*SL 0.121 + 0.019*SL
tF 0.124 0.087 + 0.019*SL 0.096 + 0.016*SL 0.098 + 0.016*SL
tPLH 0.323 0.291 + 0.016*SL 0.307 + 0.012*SL 0.333 + 0.010*SL
tPHL 0.323 0.292 + 0.015*SL 0.307 + 0.012*SL 0.330 + 0.010*SL
D to Y tR 0.146 0.102 + 0.022*SL 0.112 + 0.020*SL 0.122 + 0.019*SL
tF 0.128 0.089 + 0.020*SL 0.101 + 0.017*SL 0.104 + 0.016*SL
tPLH 0.330 0.297 + 0.016*SL 0.313 + 0.012*SL 0.340 + 0.010*SL
tPHL 0.340 0.309 + 0.016*SL 0.325 + 0.012*SL 0.349 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.144 0.120 + 0.012*SL 0.126 + 0.011*SL 0.147 + 0.009*SL
tF 0.111 0.090 + 0.010*SL 0.096 + 0.009*SL 0.110 + 0.008*SL
tPLH 0.333 0.314 + 0.010*SL 0.324 + 0.007*SL 0.359 + 0.005*SL
tPHL 0.307 0.289 + 0.009*SL 0.299 + 0.007*SL 0.328 + 0.005*SL
B to Y tR 0.144 0.120 + 0.012*SL 0.126 + 0.011*SL 0.146 + 0.010*SL
tF 0.116 0.094 + 0.011*SL 0.104 + 0.009*SL 0.114 + 0.008*SL
tPLH 0.352 0.332 + 0.010*SL 0.343 + 0.007*SL 0.377 + 0.005*SL
tPHL 0.330 0.312 + 0.009*SL 0.322 + 0.007*SL 0.352 + 0.005*SL
C to Y tR 0.145 0.122 + 0.012*SL 0.127 + 0.011*SL 0.146 + 0.010*SL
tF 0.122 0.101 + 0.011*SL 0.109 + 0.009*SL 0.121 + 0.008*SL
tPLH 0.364 0.344 + 0.010*SL 0.355 + 0.007*SL 0.389 + 0.005*SL
tPHL 0.350 0.332 + 0.009*SL 0.342 + 0.007*SL 0.373 + 0.005*SL
D to Y tR 0.145 0.122 + 0.012*SL 0.126 + 0.011*SL 0.147 + 0.009*SL
tF 0.128 0.108 + 0.010*SL 0.113 + 0.009*SL 0.127 + 0.008*SL
tPLH 0.370 0.350 + 0.010*SL 0.361 + 0.007*SL 0.395 + 0.005*SL
tPHL 0.367 0.348 + 0.009*SL 0.359 + 0.007*SL 0.392 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-24 Samsung ASIC
AD5/AD5D2/AD5D4
5-Input AND with 1X/2X/4XDrive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD5
Input Load (SL)
AD5 AD5D2 AD5D4
ABCDEABCDEABCDE
0.8 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.8 0.9 0.8 0.9 0.9 0.9 0.9
Gate Count
AD5 AD5D2 AD5D4
2.67 3.00 4.33
B
C
DY
E
A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.292 0.144 + 0.074*SL 0.139 + 0.075*SL 0.132 + 0.076*SL
tF 0.149 0.082 + 0.033*SL 0.083 + 0.033*SL 0.080 + 0.033*SL
tPLH 0.278 0.205 + 0.037*SL 0.212 + 0.035*SL 0.215 + 0.035*SL
tPHL 0.279 0.234 + 0.022*SL 0.247 + 0.019*SL 0.256 + 0.018*SL
B to Y tR 0.292 0.144 + 0.074*SL 0.140 + 0.075*SL 0.132 + 0.076*SL
tF 0.154 0.088 + 0.033*SL 0.089 + 0.033*SL 0.085 + 0.033*SL
tPLH 0.287 0.213 + 0.037*SL 0.221 + 0.035*SL 0.224 + 0.035*SL
tPHL 0.310 0.265 + 0.023*SL 0.278 + 0.019*SL 0.288 + 0.018*SL
C to Y tR 0.292 0.143 + 0.074*SL 0.139 + 0.075*SL 0.132 + 0.076*SL
tF 0.157 0.091 + 0.033*SL 0.094 + 0.033*SL 0.089 + 0.033*SL
tPLH 0.289 0.216 + 0.037*SL 0.223 + 0.035*SL 0.226 + 0.035*SL
tPHL 0.330 0.284 + 0.023*SL 0.298 + 0.020*SL 0.308 + 0.018*SL
D to Y tR 0.280 0.129 + 0.076*SL 0.127 + 0.076*SL 0.123 + 0.077*SL
tF 0.167 0.102 + 0.032*SL 0.099 + 0.033*SL 0.094 + 0.034*SL
tPLH 0.256 0.184 + 0.036*SL 0.189 + 0.035*SL 0.191 + 0.035*SL
tPHL 0.273 0.232 + 0.020*SL 0.240 + 0.019*SL 0.245 + 0.018*SL
E to Y tR 0.280 0.129 + 0.075*SL 0.126 + 0.076*SL 0.123 + 0.077*SL
tF 0.171 0.106 + 0.032*SL 0.105 + 0.033*SL 0.098 + 0.033*SL
tPLH 0.256 0.184 + 0.036*SL 0.189 + 0.035*SL 0.191 + 0.035*SL
tPHL 0.305 0.263 + 0.021*SL 0.272 + 0.019*SL 0.277 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDEY
0xxxx0
x0xxx0
xx0xx0
xxx0x0
xxxx00
111111
Samsung ASIC 3-25 STDM110
AD5/AD5D2/AD5D4
5-Input AND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.208 0.130 + 0.039*SL 0.133 + 0.038*SL 0.125 + 0.039*SL
tF 0.122 0.085 + 0.018*SL 0.092 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.269 0.227 + 0.021*SL 0.237 + 0.019*SL 0.246 + 0.018*SL
tPHL 0.293 0.264 + 0.015*SL 0.277 + 0.011*SL 0.297 + 0.009*SL
B to Y tR 0.208 0.131 + 0.039*SL 0.132 + 0.038*SL 0.125 + 0.039*SL
tF 0.125 0.089 + 0.018*SL 0.097 + 0.016*SL 0.097 + 0.016*SL
tPLH 0.277 0.235 + 0.021*SL 0.245 + 0.019*SL 0.254 + 0.018*SL
tPHL 0.315 0.286 + 0.015*SL 0.300 + 0.011*SL 0.320 + 0.009*SL
C to Y tR 0.209 0.132 + 0.038*SL 0.133 + 0.038*SL 0.125 + 0.039*SL
tF 0.135 0.099 + 0.018*SL 0.106 + 0.016*SL 0.107 + 0.016*SL
tPLH 0.277 0.234 + 0.021*SL 0.245 + 0.019*SL 0.254 + 0.018*SL
tPHL 0.347 0.317 + 0.015*SL 0.332 + 0.012*SL 0.355 + 0.010*SL
D to Y tR 0.194 0.117 + 0.039*SL 0.116 + 0.039*SL 0.112 + 0.039*SL
tF 0.144 0.111 + 0.017*SL 0.113 + 0.016*SL 0.110 + 0.016*SL
tPLH 0.250 0.209 + 0.020*SL 0.217 + 0.018*SL 0.223 + 0.018*SL
tPHL 0.293 0.267 + 0.013*SL 0.276 + 0.010*SL 0.290 + 0.009*SL
E to Y tR 0.193 0.116 + 0.039*SL 0.115 + 0.039*SL 0.111 + 0.039*SL
tF 0.150 0.116 + 0.017*SL 0.120 + 0.016*SL 0.114 + 0.016*SL
tPLH 0.247 0.206 + 0.020*SL 0.214 + 0.018*SL 0.220 + 0.018*SL
tPHL 0.323 0.297 + 0.013*SL 0.306 + 0.011*SL 0.321 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-26 Samsung ASIC
AD5/AD5D2/AD5D4
5-Input AND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AD5D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.097 0.077 + 0.010*SL 0.081 + 0.009*SL 0.073 + 0.009*SL
tF 0.084 0.064 + 0.010*SL 0.070 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.464 0.449 + 0.007*SL 0.457 + 0.005*SL 0.473 + 0.004*SL
tPHL 0.448 0.432 + 0.008*SL 0.441 + 0.006*SL 0.460 + 0.005*SL
B to Y tR 0.097 0.079 + 0.009*SL 0.078 + 0.009*SL 0.074 + 0.009*SL
tF 0.085 0.066 + 0.009*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.472 0.458 + 0.007*SL 0.466 + 0.005*SL 0.482 + 0.004*SL
tPHL 0.479 0.464 + 0.008*SL 0.473 + 0.006*SL 0.491 + 0.005*SL
C to Y tR 0.097 0.078 + 0.010*SL 0.081 + 0.009*SL 0.073 + 0.009*SL
tF 0.084 0.063 + 0.010*SL 0.072 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.474 0.460 + 0.007*SL 0.468 + 0.005*SL 0.484 + 0.004*SL
tPHL 0.499 0.484 + 0.008*SL 0.492 + 0.006*SL 0.511 + 0.005*SL
D to Y tR 0.097 0.078 + 0.009*SL 0.079 + 0.009*SL 0.073 + 0.009*SL
tF 0.086 0.067 + 0.009*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.441 0.427 + 0.007*SL 0.435 + 0.005*SL 0.451 + 0.004*SL
tPHL 0.446 0.431 + 0.008*SL 0.439 + 0.006*SL 0.458 + 0.005*SL
E to Y tR 0.097 0.077 + 0.010*SL 0.079 + 0.009*SL 0.074 + 0.009*SL
tF 0.084 0.064 + 0.010*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.442 0.427 + 0.007*SL 0.435 + 0.005*SL 0.451 + 0.004*SL
tPHL 0.479 0.463 + 0.008*SL 0.472 + 0.006*SL 0.491 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-27 STDM110
ND2DH/ND2/ND2D2/ND2D4
2-Input NAND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND2DH
ND2
Input Load (SL) Gate Count
ND2DH ND2 ND2D2 ND2D4 ND2DH ND2 ND2D2 ND2D4
ABABABAB
0.6 0.6 1.1 1.1 2.3 2.3 4.7 4.6 1.00 1.00 1.67 2.67
A
BY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.279 0.117 + 0.081*SL 0.097 + 0.086*SL 0.076 + 0.089*SL
tF 0.276 0.119 + 0.079*SL 0.100 + 0.083*SL 0.080 + 0.086*SL
tPLH 0.185 0.104 + 0.040*SL 0.108 + 0.039*SL 0.108 + 0.039*SL
tPHL 0.179 0.093 + 0.043*SL 0.098 + 0.042*SL 0.098 + 0.042*SL
B to Y tR 0.297 0.134 + 0.082*SL 0.116 + 0.086*SL 0.096 + 0.089*SL
tF 0.267 0.105 + 0.081*SL 0.090 + 0.085*SL 0.079 + 0.086*SL
tPLH 0.200 0.120 + 0.040*SL 0.122 + 0.039*SL 0.122 + 0.039*SL
tPHL 0.174 0.087 + 0.043*SL 0.092 + 0.042*SL 0.093 + 0.042*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.180 0.113 + 0.033*SL 0.103 + 0.036*SL 0.090 + 0.038*SL
tF 0.186 0.116 + 0.035*SL 0.104 + 0.038*SL 0.093 + 0.039*SL
tPLH 0.125 0.082 + 0.022*SL 0.099 + 0.017*SL 0.100 + 0.017*SL
tPHL 0.125 0.077 + 0.024*SL 0.093 + 0.020*SL 0.093 + 0.020*SL
B to Y tR 0.195 0.127 + 0.034*SL 0.119 + 0.036*SL 0.107 + 0.038*SL
tF 0.173 0.099 + 0.037*SL 0.091 + 0.039*SL 0.082 + 0.040*SL
tPLH 0.142 0.102 + 0.020*SL 0.112 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.120 0.074 + 0.023*SL 0.085 + 0.020*SL 0.087 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABY
001
011
101
110
STDM110 3-28 Samsung ASIC
ND2DH/ND2/ND2D2/ND2D4
2-Input NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND2D2
ND2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.147 0.115 + 0.016*SL 0.111 + 0.017*SL 0.096 + 0.019*SL
tF 0.151 0.115 + 0.018*SL 0.113 + 0.018*SL 0.099 + 0.019*SL
tPLH 0.104 0.078 + 0.013*SL 0.092 + 0.009*SL 0.100 + 0.009*SL
tPHL 0.101 0.074 + 0.014*SL 0.087 + 0.011*SL 0.094 + 0.010*SL
B to Y tR 0.163 0.130 + 0.016*SL 0.126 + 0.017*SL 0.112 + 0.019*SL
tF 0.138 0.103 + 0.017*SL 0.098 + 0.019*SL 0.086 + 0.020*SL
tPLH 0.122 0.099 + 0.011*SL 0.109 + 0.009*SL 0.113 + 0.009*SL
tPHL 0.097 0.072 + 0.013*SL 0.081 + 0.011*SL 0.087 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.127 0.109 + 0.009*SL 0.112 + 0.008*SL 0.097 + 0.009*SL
tF 0.128 0.107 + 0.011*SL 0.114 + 0.009*SL 0.099 + 0.010*SL
tPLH 0.088 0.073 + 0.007*SL 0.082 + 0.005*SL 0.099 + 0.004*SL
tPHL 0.086 0.070 + 0.008*SL 0.078 + 0.006*SL 0.093 + 0.005*SL
B to Y tR 0.144 0.128 + 0.008*SL 0.125 + 0.009*SL 0.113 + 0.009*SL
tF 0.118 0.101 + 0.009*SL 0.099 + 0.009*SL 0.086 + 0.010*SL
tPLH 0.108 0.096 + 0.006*SL 0.102 + 0.005*SL 0.111 + 0.004*SL
tPHL 0.083 0.069 + 0.007*SL 0.075 + 0.006*SL 0.086 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-29 STDM110
ND3DH/ND3/ND3D2/ND3D4
3-Input NAND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
ND3DH ND3 ND3D2 ND3D4
ABCABCABCABC
0.5 0.5 0.5 1.0 1.0 1.0 2.2 2.1 2.0 4.4 4.3 4.3
Gate Count
ND3DH ND3 ND3D2 ND3D4
1.33 1.33 2.33 4.00
A
B
CY
Truth Table
ABCY
0xx1
x0x1
xx01
1110
STDM110 3-30 Samsung ASIC
ND3DH/ND3/ND3D2/ND3D4
3-Input NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND3DH
ND3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.358 0.159 + 0.099*SL 0.140 + 0.104*SL 0.124 + 0.106*SL
tF 0.427 0.188 + 0.119*SL 0.171 + 0.124*SL 0.158 + 0.125*SL
tPLH 0.226 0.131 + 0.047*SL 0.132 + 0.047*SL 0.132 + 0.047*SL
tPHL 0.247 0.128 + 0.059*SL 0.128 + 0.060*SL 0.128 + 0.059*SL
B to Y tR 0.380 0.179 + 0.100*SL 0.162 + 0.104*SL 0.148 + 0.106*SL
tF 0.423 0.181 + 0.121*SL 0.170 + 0.124*SL 0.159 + 0.125*SL
tPLH 0.244 0.149 + 0.047*SL 0.150 + 0.047*SL 0.151 + 0.047*SL
tPHL 0.257 0.137 + 0.060*SL 0.138 + 0.060*SL 0.139 + 0.060*SL
C to Y tR 0.403 0.202 + 0.100*SL 0.186 + 0.104*SL 0.172 + 0.106*SL
tF 0.419 0.174 + 0.122*SL 0.166 + 0.124*SL 0.159 + 0.125*SL
tPLH 0.259 0.163 + 0.048*SL 0.165 + 0.047*SL 0.166 + 0.047*SL
tPHL 0.259 0.139 + 0.060*SL 0.140 + 0.060*SL 0.141 + 0.060*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.225 0.138 + 0.043*SL 0.127 + 0.046*SL 0.114 + 0.048*SL
tF 0.271 0.162 + 0.054*SL 0.153 + 0.057*SL 0.140 + 0.058*SL
tPLH 0.156 0.109 + 0.024*SL 0.116 + 0.022*SL 0.116 + 0.022*SL
tPHL 0.165 0.107 + 0.029*SL 0.110 + 0.028*SL 0.110 + 0.028*SL
B to Y tR 0.244 0.156 + 0.044*SL 0.146 + 0.047*SL 0.135 + 0.048*SL
tF 0.264 0.153 + 0.055*SL 0.145 + 0.058*SL 0.137 + 0.059*SL
tPLH 0.175 0.130 + 0.022*SL 0.132 + 0.022*SL 0.133 + 0.022*SL
tPHL 0.172 0.113 + 0.030*SL 0.118 + 0.028*SL 0.119 + 0.028*SL
C to Y tR 0.266 0.177 + 0.044*SL 0.168 + 0.047*SL 0.157 + 0.048*SL
tF 0.257 0.143 + 0.057*SL 0.138 + 0.058*SL 0.133 + 0.059*SL
tPLH 0.188 0.143 + 0.022*SL 0.144 + 0.022*SL 0.146 + 0.022*SL
tPHL 0.173 0.114 + 0.029*SL 0.118 + 0.028*SL 0.118 + 0.028*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-31 STDM110
ND3DH/ND3/ND3D2/ND3D4
3-Input NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND3D2
ND3D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.175 0.134 + 0.021*SL 0.126 + 0.023*SL 0.112 + 0.024*SL
tF 0.211 0.159 + 0.026*SL 0.152 + 0.028*SL 0.137 + 0.029*SL
tPLH 0.129 0.101 + 0.014*SL 0.112 + 0.011*SL 0.114 + 0.011*SL
tPHL 0.132 0.099 + 0.016*SL 0.108 + 0.014*SL 0.108 + 0.014*SL
B to Y tR 0.194 0.152 + 0.021*SL 0.146 + 0.023*SL 0.132 + 0.024*SL
tF 0.202 0.148 + 0.027*SL 0.142 + 0.028*SL 0.133 + 0.029*SL
tPLH 0.148 0.123 + 0.012*SL 0.129 + 0.011*SL 0.129 + 0.011*SL
tPHL 0.136 0.104 + 0.016*SL 0.111 + 0.014*SL 0.113 + 0.014*SL
C to Y tR 0.216 0.173 + 0.022*SL 0.169 + 0.023*SL 0.155 + 0.024*SL
tF 0.193 0.138 + 0.027*SL 0.133 + 0.029*SL 0.127 + 0.029*SL
tPLH 0.161 0.138 + 0.012*SL 0.141 + 0.011*SL 0.142 + 0.011*SL
tPHL 0.137 0.106 + 0.016*SL 0.111 + 0.014*SL 0.113 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.152 0.131 + 0.011*SL 0.129 + 0.011*SL 0.113 + 0.012*SL
tF 0.183 0.157 + 0.013*SL 0.153 + 0.014*SL 0.138 + 0.014*SL
tPLH 0.113 0.097 + 0.008*SL 0.105 + 0.006*SL 0.113 + 0.005*SL
tPHL 0.114 0.096 + 0.009*SL 0.102 + 0.007*SL 0.106 + 0.007*SL
B to Y tR 0.172 0.151 + 0.010*SL 0.148 + 0.011*SL 0.134 + 0.012*SL
tF 0.174 0.149 + 0.013*SL 0.143 + 0.014*SL 0.132 + 0.015*SL
tPLH 0.134 0.120 + 0.007*SL 0.125 + 0.006*SL 0.128 + 0.005*SL
tPHL 0.119 0.102 + 0.009*SL 0.107 + 0.007*SL 0.112 + 0.007*SL
C to Y tR 0.194 0.174 + 0.010*SL 0.170 + 0.011*SL 0.157 + 0.012*SL
tF 0.164 0.137 + 0.014*SL 0.134 + 0.014*SL 0.125 + 0.015*SL
tPLH 0.149 0.136 + 0.006*SL 0.139 + 0.006*SL 0.142 + 0.005*SL
tPHL 0.121 0.105 + 0.008*SL 0.109 + 0.007*SL 0.113 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-32 Samsung ASIC
ND4DH/ND4/ND4D2/ND4D2B/ND4D4
4-Input NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND4DH
Input Load (SL)
ND4DH ND4 ND4D2 ND4D2B ND4D4
A B C D ABCDABCDABCDABCD
0.5 0.5 0.5 0.5 0.9 0.9 0.9 0.9 1.7 1.9 1.9 2.1 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9
Gate Count
ND4DH ND4 ND4D2 ND4D2B ND4D4
1.67 1.67 2.67 2.67 3.33
A
B
CY
D
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.424 0.170 + 0.127*SL 0.148 + 0.133*SL 0.141 + 0.134*SL
tF 0.546 0.228 + 0.159*SL 0.209 + 0.164*SL 0.206 + 0.164*SL
tPLH 0.262 0.143 + 0.060*SL 0.144 + 0.059*SL 0.145 + 0.059*SL
tPHL 0.286 0.131 + 0.077*SL 0.132 + 0.077*SL 0.132 + 0.077*SL
B to Y tR 0.453 0.197 + 0.128*SL 0.178 + 0.133*SL 0.172 + 0.134*SL
tF 0.547 0.226 + 0.160*SL 0.214 + 0.163*SL 0.208 + 0.164*SL
tPLH 0.285 0.166 + 0.060*SL 0.167 + 0.059*SL 0.168 + 0.059*SL
tPHL 0.308 0.153 + 0.078*SL 0.154 + 0.077*SL 0.155 + 0.077*SL
C to Y tR 0.484 0.227 + 0.129*SL 0.210 + 0.133*SL 0.204 + 0.134*SL
tF 0.544 0.222 + 0.161*SL 0.212 + 0.164*SL 0.208 + 0.164*SL
tPLH 0.305 0.184 + 0.060*SL 0.187 + 0.059*SL 0.189 + 0.059*SL
tPHL 0.323 0.167 + 0.078*SL 0.169 + 0.078*SL 0.170 + 0.077*SL
D to Y tR 0.516 0.259 + 0.128*SL 0.242 + 0.133*SL 0.236 + 0.133*SL
tF 0.541 0.217 + 0.162*SL 0.210 + 0.164*SL 0.208 + 0.164*SL
tPLH 0.318 0.196 + 0.061*SL 0.202 + 0.060*SL 0.205 + 0.059*SL
tPHL 0.327 0.171 + 0.078*SL 0.172 + 0.077*SL 0.173 + 0.077*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
0xxx1
x0xx1
xx0x1
xxx01
11110
Samsung ASIC 3-33 STDM110
ND4DH/ND4/ND4D2/ND4D2B/ND4D4
4-Input NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND4
ND4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.255 0.143 + 0.056*SL 0.132 + 0.059*SL 0.118 + 0.061*SL
tF 0.341 0.195 + 0.073*SL 0.185 + 0.076*SL 0.171 + 0.077*SL
tPLH 0.177 0.121 + 0.028*SL 0.124 + 0.027*SL 0.125 + 0.027*SL
tPHL 0.184 0.111 + 0.036*SL 0.110 + 0.037*SL 0.111 + 0.037*SL
B to Y tR 0.282 0.169 + 0.056*SL 0.157 + 0.059*SL 0.146 + 0.061*SL
tF 0.340 0.192 + 0.074*SL 0.183 + 0.076*SL 0.175 + 0.077*SL
tPLH 0.201 0.145 + 0.028*SL 0.146 + 0.027*SL 0.147 + 0.027*SL
tPHL 0.203 0.128 + 0.038*SL 0.131 + 0.037*SL 0.132 + 0.037*SL
C to Y tR 0.310 0.196 + 0.057*SL 0.187 + 0.059*SL 0.175 + 0.061*SL
tF 0.335 0.184 + 0.075*SL 0.179 + 0.076*SL 0.173 + 0.077*SL
tPLH 0.218 0.161 + 0.028*SL 0.163 + 0.028*SL 0.165 + 0.027*SL
tPHL 0.216 0.141 + 0.038*SL 0.143 + 0.037*SL 0.144 + 0.037*SL
D to Y tR 0.339 0.225 + 0.057*SL 0.215 + 0.059*SL 0.204 + 0.061*SL
tF 0.330 0.178 + 0.076*SL 0.175 + 0.077*SL 0.170 + 0.078*SL
tPLH 0.229 0.171 + 0.029*SL 0.175 + 0.028*SL 0.178 + 0.028*SL
tPHL 0.220 0.145 + 0.037*SL 0.147 + 0.037*SL 0.148 + 0.037*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.195 0.142 + 0.027*SL 0.134 + 0.029*SL 0.118 + 0.030*SL
tF 0.260 0.188 + 0.036*SL 0.183 + 0.037*SL 0.167 + 0.039*SL
tPLH 0.144 0.112 + 0.016*SL 0.120 + 0.014*SL 0.121 + 0.014*SL
tPHL 0.143 0.105 + 0.019*SL 0.108 + 0.018*SL 0.107 + 0.018*SL
B to Y tR 0.219 0.164 + 0.027*SL 0.157 + 0.029*SL 0.143 + 0.030*SL
tF 0.257 0.185 + 0.036*SL 0.179 + 0.038*SL 0.169 + 0.039*SL
tPLH 0.168 0.139 + 0.014*SL 0.142 + 0.014*SL 0.142 + 0.014*SL
tPHL 0.160 0.120 + 0.020*SL 0.125 + 0.019*SL 0.127 + 0.018*SL
C to Y tR 0.246 0.191 + 0.028*SL 0.186 + 0.029*SL 0.172 + 0.030*SL
tF 0.252 0.178 + 0.037*SL 0.173 + 0.038*SL 0.166 + 0.039*SL
tPLH 0.185 0.156 + 0.014*SL 0.158 + 0.014*SL 0.160 + 0.014*SL
tPHL 0.173 0.134 + 0.020*SL 0.138 + 0.019*SL 0.140 + 0.018*SL
D to Y tR 0.276 0.221 + 0.028*SL 0.215 + 0.029*SL 0.201 + 0.030*SL
tF 0.247 0.172 + 0.037*SL 0.168 + 0.038*SL 0.162 + 0.039*SL
tPLH 0.196 0.167 + 0.015*SL 0.169 + 0.014*SL 0.173 + 0.014*SL
tPHL 0.178 0.140 + 0.019*SL 0.142 + 0.019*SL 0.144 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-34 Samsung ASIC
ND4DH/ND4/ND4D2/ND4D2B/ND4D4
4-Input NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND4D2B
ND4D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.098 0.061 + 0.018*SL 0.060 + 0.019*SL 0.052 + 0.019*SL
tF 0.091 0.059 + 0.016*SL 0.059 + 0.016*SL 0.054 + 0.016*SL
tPLH 0.315 0.293 + 0.011*SL 0.301 + 0.009*SL 0.306 + 0.009*SL
tPHL 0.334 0.310 + 0.012*SL 0.320 + 0.009*SL 0.329 + 0.009*SL
B to Y tR 0.099 0.062 + 0.018*SL 0.060 + 0.019*SL 0.052 + 0.019*SL
tF 0.092 0.061 + 0.016*SL 0.060 + 0.016*SL 0.055 + 0.016*SL
tPLH 0.340 0.318 + 0.011*SL 0.326 + 0.009*SL 0.331 + 0.009*SL
tPHL 0.351 0.327 + 0.012*SL 0.337 + 0.009*SL 0.347 + 0.009*SL
C to Y tR 0.100 0.063 + 0.018*SL 0.061 + 0.019*SL 0.052 + 0.019*SL
tF 0.092 0.060 + 0.016*SL 0.061 + 0.016*SL 0.055 + 0.016*SL
tPLH 0.361 0.339 + 0.011*SL 0.347 + 0.009*SL 0.352 + 0.009*SL
tPHL 0.363 0.339 + 0.012*SL 0.349 + 0.009*SL 0.359 + 0.009*SL
D to Y tR 0.100 0.064 + 0.018*SL 0.062 + 0.019*SL 0.053 + 0.019*SL
tF 0.090 0.057 + 0.017*SL 0.062 + 0.016*SL 0.055 + 0.016*SL
tPLH 0.377 0.355 + 0.011*SL 0.363 + 0.009*SL 0.368 + 0.009*SL
tPHL 0.367 0.343 + 0.012*SL 0.354 + 0.009*SL 0.363 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.094 0.076 + 0.009*SL 0.076 + 0.009*SL 0.071 + 0.009*SL
tF 0.090 0.071 + 0.010*SL 0.077 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.360 0.346 + 0.007*SL 0.354 + 0.005*SL 0.369 + 0.004*SL
tPHL 0.388 0.372 + 0.008*SL 0.381 + 0.006*SL 0.401 + 0.005*SL
B to Y tR 0.095 0.075 + 0.010*SL 0.079 + 0.009*SL 0.071 + 0.009*SL
tF 0.092 0.072 + 0.010*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.385 0.370 + 0.007*SL 0.378 + 0.005*SL 0.393 + 0.004*SL
tPHL 0.407 0.391 + 0.008*SL 0.400 + 0.006*SL 0.420 + 0.005*SL
C to Y tR 0.096 0.075 + 0.010*SL 0.080 + 0.009*SL 0.072 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.079 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.408 0.394 + 0.007*SL 0.402 + 0.005*SL 0.417 + 0.004*SL
tPHL 0.418 0.402 + 0.008*SL 0.412 + 0.006*SL 0.431 + 0.005*SL
D to Y tR 0.097 0.077 + 0.010*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.077 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.425 0.410 + 0.007*SL 0.418 + 0.005*SL 0.434 + 0.004*SL
tPHL 0.426 0.410 + 0.008*SL 0.419 + 0.006*SL 0.439 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-35 STDM110
ND5/ND5D2/ND5D4
5-Input NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND5
Input Load (SL) Gate Count
ND5 ND5D2 ND5D4 ND5 ND5D2 ND5D4
ABCDEABCDEABCDE
0.8 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.9 0.9 3.33 3.67 4.00
B
C
DY
E
A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.141 0.067 + 0.037*SL 0.062 + 0.038*SL 0.057 + 0.039*SL
tF 0.144 0.079 + 0.032*SL 0.083 + 0.031*SL 0.083 + 0.031*SL
tPLH 0.347 0.309 + 0.019*SL 0.314 + 0.018*SL 0.315 + 0.017*SL
tPHL 0.357 0.312 + 0.022*SL 0.326 + 0.019*SL 0.337 + 0.017*SL
B to Y tR 0.143 0.069 + 0.037*SL 0.064 + 0.038*SL 0.058 + 0.039*SL
tF 0.145 0.081 + 0.032*SL 0.085 + 0.031*SL 0.082 + 0.031*SL
tPLH 0.378 0.340 + 0.019*SL 0.345 + 0.018*SL 0.346 + 0.017*SL
tPHL 0.365 0.320 + 0.022*SL 0.334 + 0.019*SL 0.345 + 0.017*SL
C to Y tR 0.144 0.071 + 0.037*SL 0.064 + 0.038*SL 0.059 + 0.039*SL
tF 0.144 0.079 + 0.032*SL 0.084 + 0.031*SL 0.083 + 0.031*SL
tPLH 0.404 0.366 + 0.019*SL 0.371 + 0.018*SL 0.373 + 0.017*SL
tPHL 0.366 0.322 + 0.022*SL 0.335 + 0.019*SL 0.346 + 0.017*SL
D to Y tR 0.145 0.071 + 0.037*SL 0.066 + 0.038*SL 0.060 + 0.039*SL
tF 0.144 0.080 + 0.032*SL 0.084 + 0.031*SL 0.080 + 0.032*SL
tPLH 0.343 0.305 + 0.019*SL 0.310 + 0.018*SL 0.312 + 0.017*SL
tPHL 0.340 0.296 + 0.022*SL 0.309 + 0.019*SL 0.320 + 0.017*SL
E to Y tR 0.145 0.072 + 0.037*SL 0.064 + 0.038*SL 0.060 + 0.039*SL
tF 0.143 0.079 + 0.032*SL 0.083 + 0.031*SL 0.081 + 0.031*SL
tPLH 0.371 0.333 + 0.019*SL 0.338 + 0.018*SL 0.340 + 0.017*SL
tPHL 0.338 0.294 + 0.022*SL 0.307 + 0.019*SL 0.317 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDEY
0xxxx1
x0xxx1
xx0xx1
xxx0x1
xxxx01
111110
STDM110 3-36 Samsung ASIC
ND5/ND5D2/ND5D4
5-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.064 + 0.018*SL 0.063 + 0.018*SL 0.053 + 0.019*SL
tF 0.114 0.078 + 0.018*SL 0.088 + 0.016*SL 0.092 + 0.016*SL
tPLH 0.347 0.324 + 0.011*SL 0.332 + 0.009*SL 0.338 + 0.009*SL
tPHL 0.368 0.339 + 0.014*SL 0.353 + 0.011*SL 0.374 + 0.009*SL
B to Y tR 0.101 0.064 + 0.018*SL 0.063 + 0.019*SL 0.054 + 0.019*SL
tF 0.114 0.078 + 0.018*SL 0.088 + 0.016*SL 0.092 + 0.016*SL
tPLH 0.378 0.355 + 0.011*SL 0.364 + 0.009*SL 0.370 + 0.009*SL
tPHL 0.376 0.347 + 0.014*SL 0.361 + 0.011*SL 0.382 + 0.009*SL
C to Y tR 0.102 0.066 + 0.018*SL 0.065 + 0.018*SL 0.055 + 0.019*SL
tF 0.114 0.077 + 0.019*SL 0.088 + 0.016*SL 0.092 + 0.016*SL
tPLH 0.405 0.382 + 0.011*SL 0.391 + 0.009*SL 0.397 + 0.009*SL
tPHL 0.377 0.348 + 0.014*SL 0.362 + 0.011*SL 0.383 + 0.009*SL
D to Y tR 0.102 0.067 + 0.018*SL 0.063 + 0.019*SL 0.056 + 0.019*SL
tF 0.113 0.076 + 0.018*SL 0.086 + 0.016*SL 0.091 + 0.016*SL
tPLH 0.340 0.317 + 0.011*SL 0.325 + 0.009*SL 0.332 + 0.009*SL
tPHL 0.349 0.321 + 0.014*SL 0.335 + 0.011*SL 0.356 + 0.009*SL
E to Y tR 0.103 0.066 + 0.018*SL 0.066 + 0.018*SL 0.056 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.085 + 0.016*SL 0.091 + 0.016*SL
tPLH 0.369 0.346 + 0.012*SL 0.355 + 0.009*SL 0.361 + 0.009*SL
tPHL 0.347 0.319 + 0.014*SL 0.333 + 0.011*SL 0.354 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-37 STDM110
ND5/ND5D2/ND5D4
5-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND5D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.095 0.077 + 0.009*SL 0.076 + 0.009*SL 0.071 + 0.009*SL
tF 0.125 0.106 + 0.010*SL 0.110 + 0.009*SL 0.126 + 0.008*SL
tPLH 0.379 0.364 + 0.007*SL 0.372 + 0.005*SL 0.388 + 0.004*SL
tPHL 0.435 0.416 + 0.009*SL 0.426 + 0.007*SL 0.458 + 0.005*SL
B to Y tR 0.095 0.075 + 0.010*SL 0.080 + 0.009*SL 0.072 + 0.009*SL
tF 0.125 0.103 + 0.011*SL 0.111 + 0.009*SL 0.128 + 0.008*SL
tPLH 0.411 0.396 + 0.007*SL 0.404 + 0.005*SL 0.420 + 0.004*SL
tPHL 0.443 0.425 + 0.009*SL 0.434 + 0.007*SL 0.467 + 0.005*SL
C to Y tR 0.096 0.079 + 0.009*SL 0.077 + 0.009*SL 0.072 + 0.009*SL
tF 0.125 0.106 + 0.010*SL 0.110 + 0.009*SL 0.127 + 0.008*SL
tPLH 0.439 0.424 + 0.007*SL 0.432 + 0.005*SL 0.448 + 0.004*SL
tPHL 0.444 0.425 + 0.009*SL 0.435 + 0.007*SL 0.468 + 0.005*SL
D to Y tR 0.097 0.076 + 0.010*SL 0.082 + 0.009*SL 0.073 + 0.009*SL
tF 0.124 0.103 + 0.011*SL 0.111 + 0.009*SL 0.127 + 0.008*SL
tPLH 0.369 0.355 + 0.007*SL 0.363 + 0.005*SL 0.379 + 0.004*SL
tPHL 0.416 0.397 + 0.009*SL 0.407 + 0.007*SL 0.440 + 0.005*SL
E to Y tR 0.098 0.080 + 0.009*SL 0.080 + 0.009*SL 0.074 + 0.009*SL
tF 0.123 0.100 + 0.011*SL 0.111 + 0.009*SL 0.127 + 0.008*SL
tPLH 0.398 0.384 + 0.007*SL 0.392 + 0.005*SL 0.408 + 0.004*SL
tPHL 0.414 0.395 + 0.009*SL 0.405 + 0.007*SL 0.438 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-38 Samsung ASIC
ND6/ND6D2/ND6D4
6-Input NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
ND6 ND6D2 ND6D4
ABCDEFABCDEFABCDEF
0.8 0.9 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.9 0.9 0.9
Gate Count
ND6 ND6D2 ND6D4
3.33 3.67 4.33
B
C
DY
E
A
F
Truth Table
ABCDEFY
1111110
Other States 1
Samsung ASIC 3-39 STDM110
ND6/ND6D2/ND6D4
6-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND6
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.140 0.067 + 0.037*SL 0.063 + 0.038*SL 0.058 + 0.038*SL
tF 0.149 0.082 + 0.034*SL 0.086 + 0.033*SL 0.083 + 0.033*SL
tPLH 0.351 0.314 + 0.019*SL 0.319 + 0.017*SL 0.321 + 0.017*SL
tPHL 0.364 0.318 + 0.023*SL 0.332 + 0.019*SL 0.343 + 0.018*SL
B to Y tR 0.142 0.070 + 0.036*SL 0.064 + 0.038*SL 0.058 + 0.038*SL
tF 0.149 0.082 + 0.034*SL 0.085 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.382 0.345 + 0.019*SL 0.350 + 0.017*SL 0.352 + 0.017*SL
tPHL 0.372 0.326 + 0.023*SL 0.340 + 0.019*SL 0.350 + 0.018*SL
C to Y tR 0.143 0.071 + 0.036*SL 0.064 + 0.038*SL 0.059 + 0.038*SL
tF 0.149 0.082 + 0.033*SL 0.086 + 0.033*SL 0.083 + 0.033*SL
tPLH 0.408 0.371 + 0.019*SL 0.376 + 0.017*SL 0.378 + 0.017*SL
tPHL 0.372 0.327 + 0.023*SL 0.341 + 0.019*SL 0.351 + 0.018*SL
D to Y tR 0.144 0.072 + 0.036*SL 0.066 + 0.038*SL 0.060 + 0.038*SL
tF 0.149 0.081 + 0.034*SL 0.087 + 0.032*SL 0.084 + 0.033*SL
tPLH 0.368 0.330 + 0.019*SL 0.336 + 0.017*SL 0.337 + 0.017*SL
tPHL 0.383 0.337 + 0.023*SL 0.352 + 0.019*SL 0.362 + 0.018*SL
E to Y tR 0.143 0.070 + 0.037*SL 0.066 + 0.038*SL 0.060 + 0.038*SL
tF 0.149 0.081 + 0.034*SL 0.086 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.399 0.361 + 0.019*SL 0.367 + 0.017*SL 0.369 + 0.017*SL
tPHL 0.391 0.345 + 0.023*SL 0.360 + 0.019*SL 0.370 + 0.018*SL
F to Y tR 0.145 0.072 + 0.036*SL 0.067 + 0.037*SL 0.061 + 0.038*SL
tF 0.149 0.083 + 0.033*SL 0.085 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.426 0.388 + 0.019*SL 0.394 + 0.017*SL 0.395 + 0.017*SL
tPHL 0.394 0.348 + 0.023*SL 0.363 + 0.019*SL 0.373 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-40 Samsung ASIC
ND6/ND6D2/ND6D4
6-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND6D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.101 0.065 + 0.018*SL 0.063 + 0.018*SL 0.055 + 0.019*SL
tF 0.116 0.079 + 0.019*SL 0.089 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.353 0.330 + 0.011*SL 0.339 + 0.009*SL 0.345 + 0.009*SL
tPHL 0.372 0.343 + 0.015*SL 0.357 + 0.011*SL 0.379 + 0.009*SL
B to Y tR 0.102 0.066 + 0.018*SL 0.065 + 0.018*SL 0.056 + 0.019*SL
tF 0.115 0.079 + 0.018*SL 0.087 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.384 0.361 + 0.011*SL 0.370 + 0.009*SL 0.377 + 0.009*SL
tPHL 0.380 0.351 + 0.015*SL 0.365 + 0.011*SL 0.387 + 0.009*SL
C to Y tR 0.103 0.066 + 0.018*SL 0.066 + 0.018*SL 0.056 + 0.019*SL
tF 0.116 0.079 + 0.019*SL 0.089 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.411 0.388 + 0.012*SL 0.397 + 0.009*SL 0.404 + 0.009*SL
tPHL 0.381 0.352 + 0.015*SL 0.366 + 0.011*SL 0.388 + 0.009*SL
D to Y tR 0.104 0.068 + 0.018*SL 0.067 + 0.018*SL 0.057 + 0.019*SL
tF 0.116 0.079 + 0.019*SL 0.089 + 0.016*SL 0.094 + 0.016*SL
tPLH 0.366 0.343 + 0.012*SL 0.352 + 0.009*SL 0.359 + 0.009*SL
tPHL 0.391 0.362 + 0.015*SL 0.376 + 0.011*SL 0.398 + 0.009*SL
E to Y tR 0.104 0.069 + 0.018*SL 0.066 + 0.018*SL 0.057 + 0.019*SL
tF 0.115 0.079 + 0.018*SL 0.087 + 0.016*SL 0.094 + 0.016*SL
tPLH 0.398 0.375 + 0.012*SL 0.384 + 0.009*SL 0.391 + 0.009*SL
tPHL 0.399 0.370 + 0.015*SL 0.384 + 0.011*SL 0.406 + 0.009*SL
F to Y tR 0.105 0.069 + 0.018*SL 0.068 + 0.018*SL 0.058 + 0.019*SL
tF 0.115 0.078 + 0.019*SL 0.088 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.425 0.402 + 0.012*SL 0.411 + 0.009*SL 0.418 + 0.009*SL
tPHL 0.402 0.373 + 0.015*SL 0.387 + 0.011*SL 0.409 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-41 STDM110
ND6/ND6D2/ND6D4
6-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND6D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.075 + 0.010*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.126 0.106 + 0.010*SL 0.110 + 0.009*SL 0.129 + 0.008*SL
tPLH 0.386 0.372 + 0.007*SL 0.380 + 0.005*SL 0.396 + 0.004*SL
tPHL 0.438 0.420 + 0.009*SL 0.430 + 0.007*SL 0.462 + 0.005*SL
B to Y tR 0.097 0.079 + 0.009*SL 0.078 + 0.009*SL 0.074 + 0.009*SL
tF 0.124 0.101 + 0.012*SL 0.112 + 0.009*SL 0.129 + 0.008*SL
tPLH 0.418 0.404 + 0.007*SL 0.412 + 0.005*SL 0.428 + 0.004*SL
tPHL 0.446 0.428 + 0.009*SL 0.438 + 0.007*SL 0.471 + 0.005*SL
C to Y tR 0.098 0.077 + 0.010*SL 0.082 + 0.009*SL 0.075 + 0.009*SL
tF 0.126 0.105 + 0.010*SL 0.111 + 0.009*SL 0.129 + 0.008*SL
tPLH 0.446 0.431 + 0.007*SL 0.439 + 0.005*SL 0.456 + 0.004*SL
tPHL 0.447 0.429 + 0.009*SL 0.439 + 0.007*SL 0.471 + 0.005*SL
D to Y tR 0.098 0.080 + 0.009*SL 0.081 + 0.009*SL 0.074 + 0.009*SL
tF 0.126 0.106 + 0.010*SL 0.110 + 0.009*SL 0.128 + 0.008*SL
tPLH 0.397 0.383 + 0.007*SL 0.391 + 0.005*SL 0.407 + 0.004*SL
tPHL 0.458 0.439 + 0.009*SL 0.449 + 0.007*SL 0.482 + 0.005*SL
E to Y tR 0.098 0.078 + 0.010*SL 0.083 + 0.009*SL 0.075 + 0.009*SL
tF 0.125 0.103 + 0.011*SL 0.112 + 0.009*SL 0.129 + 0.008*SL
tPLH 0.429 0.415 + 0.007*SL 0.423 + 0.005*SL 0.439 + 0.004*SL
tPHL 0.465 0.447 + 0.009*SL 0.457 + 0.007*SL 0.490 + 0.005*SL
F to Y tR 0.100 0.081 + 0.010*SL 0.083 + 0.009*SL 0.076 + 0.009*SL
tF 0.125 0.102 + 0.011*SL 0.112 + 0.009*SL 0.129 + 0.008*SL
tPLH 0.457 0.443 + 0.007*SL 0.451 + 0.005*SL 0.467 + 0.004*SL
tPHL 0.468 0.450 + 0.009*SL 0.460 + 0.007*SL 0.493 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-42 Samsung ASIC
ND8/ND8D2/ND8D4
8-Input NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
ND8 ND8
ABCDEFGH
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 4.00
ND8D2 ND8D2
ABCDEFGH
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 4.33
ND8D4 ND8D4
ABCDEFGH
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 5.00
C
D
EY
F
B
G
A
H
Truth Table
ABCDEFGHY
111111110
Other States 1
Samsung ASIC 3-43 STDM110
ND8/ND8D2/ND8D4
8-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.143 0.069 + 0.037*SL 0.065 + 0.038*SL 0.058 + 0.039*SL
tF 0.151 0.084 + 0.033*SL 0.087 + 0.033*SL 0.085 + 0.033*SL
tPLH 0.378 0.340 + 0.019*SL 0.346 + 0.018*SL 0.347 + 0.017*SL
tPHL 0.394 0.348 + 0.023*SL 0.362 + 0.020*SL 0.373 + 0.018*SL
B to Y tR 0.143 0.069 + 0.037*SL 0.065 + 0.038*SL 0.059 + 0.039*SL
tF 0.150 0.083 + 0.034*SL 0.088 + 0.033*SL 0.085 + 0.033*SL
tPLH 0.416 0.377 + 0.019*SL 0.383 + 0.018*SL 0.385 + 0.017*SL
tPHL 0.413 0.367 + 0.023*SL 0.381 + 0.020*SL 0.392 + 0.018*SL
C to Y tR 0.146 0.073 + 0.036*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.150 0.082 + 0.034*SL 0.089 + 0.032*SL 0.085 + 0.033*SL
tPLH 0.447 0.409 + 0.019*SL 0.415 + 0.018*SL 0.417 + 0.017*SL
tPHL 0.425 0.379 + 0.023*SL 0.393 + 0.020*SL 0.404 + 0.018*SL
D to Y tR 0.146 0.074 + 0.036*SL 0.066 + 0.038*SL 0.061 + 0.039*SL
tF 0.151 0.084 + 0.033*SL 0.088 + 0.033*SL 0.085 + 0.033*SL
tPLH 0.475 0.436 + 0.019*SL 0.442 + 0.018*SL 0.444 + 0.017*SL
tPHL 0.432 0.386 + 0.023*SL 0.400 + 0.020*SL 0.411 + 0.018*SL
E to Y tR 0.146 0.073 + 0.036*SL 0.065 + 0.038*SL 0.061 + 0.039*SL
tF 0.151 0.083 + 0.034*SL 0.089 + 0.032*SL 0.086 + 0.033*SL
tPLH 0.396 0.358 + 0.019*SL 0.364 + 0.018*SL 0.366 + 0.017*SL
tPHL 0.409 0.363 + 0.023*SL 0.377 + 0.020*SL 0.389 + 0.018*SL
F to Y tR 0.147 0.075 + 0.036*SL 0.067 + 0.038*SL 0.062 + 0.039*SL
tF 0.151 0.083 + 0.034*SL 0.089 + 0.032*SL 0.086 + 0.033*SL
tPLH 0.433 0.395 + 0.019*SL 0.401 + 0.018*SL 0.403 + 0.017*SL
tPHL 0.426 0.380 + 0.023*SL 0.395 + 0.020*SL 0.406 + 0.018*SL
G to Y tR 0.147 0.073 + 0.037*SL 0.069 + 0.038*SL 0.061 + 0.039*SL
tF 0.151 0.083 + 0.034*SL 0.089 + 0.032*SL 0.086 + 0.033*SL
tPLH 0.466 0.428 + 0.019*SL 0.434 + 0.018*SL 0.436 + 0.017*SL
tPHL 0.439 0.392 + 0.023*SL 0.407 + 0.020*SL 0.418 + 0.018*SL
H to Y tR 0.149 0.076 + 0.036*SL 0.070 + 0.038*SL 0.063 + 0.039*SL
tF 0.151 0.084 + 0.034*SL 0.089 + 0.032*SL 0.086 + 0.033*SL
tPLH 0.493 0.455 + 0.019*SL 0.461 + 0.018*SL 0.463 + 0.017*SL
tPHL 0.446 0.399 + 0.023*SL 0.414 + 0.020*SL 0.425 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-44 Samsung ASIC
ND8/ND8D2/ND8D4
8-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.101 0.065 + 0.018*SL 0.063 + 0.019*SL 0.055 + 0.019*SL
tF 0.118 0.080 + 0.019*SL 0.089 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.379 0.356 + 0.012*SL 0.365 + 0.009*SL 0.372 + 0.009*SL
tPHL 0.406 0.376 + 0.015*SL 0.391 + 0.011*SL 0.413 + 0.010*SL
B to Y tR 0.102 0.067 + 0.018*SL 0.064 + 0.018*SL 0.055 + 0.019*SL
tF 0.118 0.080 + 0.019*SL 0.089 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.417 0.394 + 0.012*SL 0.403 + 0.009*SL 0.410 + 0.009*SL
tPHL 0.425 0.395 + 0.015*SL 0.410 + 0.011*SL 0.432 + 0.010*SL
C to Y tR 0.103 0.067 + 0.018*SL 0.067 + 0.018*SL 0.056 + 0.019*SL
tF 0.118 0.079 + 0.019*SL 0.091 + 0.017*SL 0.094 + 0.016*SL
tPLH 0.450 0.426 + 0.012*SL 0.436 + 0.009*SL 0.443 + 0.009*SL
tPHL 0.437 0.407 + 0.015*SL 0.422 + 0.011*SL 0.444 + 0.010*SL
D to Y tR 0.105 0.069 + 0.018*SL 0.066 + 0.018*SL 0.057 + 0.019*SL
tF 0.118 0.080 + 0.019*SL 0.090 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.478 0.454 + 0.012*SL 0.464 + 0.009*SL 0.471 + 0.009*SL
tPHL 0.444 0.414 + 0.015*SL 0.429 + 0.011*SL 0.451 + 0.010*SL
E to Y tR 0.104 0.068 + 0.018*SL 0.066 + 0.018*SL 0.056 + 0.019*SL
tF 0.118 0.079 + 0.019*SL 0.091 + 0.017*SL 0.094 + 0.016*SL
tPLH 0.394 0.371 + 0.012*SL 0.380 + 0.009*SL 0.388 + 0.009*SL
tPHL 0.419 0.389 + 0.015*SL 0.404 + 0.012*SL 0.426 + 0.010*SL
F to Y tR 0.105 0.068 + 0.018*SL 0.068 + 0.018*SL 0.057 + 0.019*SL
tF 0.118 0.080 + 0.019*SL 0.090 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.432 0.408 + 0.012*SL 0.418 + 0.009*SL 0.425 + 0.009*SL
tPHL 0.437 0.406 + 0.015*SL 0.421 + 0.011*SL 0.444 + 0.010*SL
G to Y tR 0.106 0.070 + 0.018*SL 0.069 + 0.018*SL 0.059 + 0.019*SL
tF 0.118 0.080 + 0.019*SL 0.090 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.465 0.441 + 0.012*SL 0.451 + 0.009*SL 0.458 + 0.009*SL
tPHL 0.449 0.419 + 0.015*SL 0.434 + 0.011*SL 0.456 + 0.010*SL
H to Y tR 0.107 0.070 + 0.018*SL 0.071 + 0.018*SL 0.058 + 0.019*SL
tF 0.119 0.080 + 0.019*SL 0.090 + 0.017*SL 0.095 + 0.016*SL
tPLH 0.493 0.469 + 0.012*SL 0.479 + 0.009*SL 0.487 + 0.009*SL
tPHL 0.456 0.426 + 0.015*SL 0.440 + 0.012*SL 0.463 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-45 STDM110
ND8/ND8D2/ND8D4
8-Input NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
ND8D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.097 0.078 + 0.010*SL 0.081 + 0.009*SL 0.074 + 0.009*SL
tF 0.126 0.104 + 0.011*SL 0.114 + 0.009*SL 0.131 + 0.008*SL
tPLH 0.415 0.400 + 0.007*SL 0.408 + 0.005*SL 0.424 + 0.004*SL
tPHL 0.475 0.456 + 0.009*SL 0.466 + 0.007*SL 0.499 + 0.005*SL
B to Y tR 0.098 0.078 + 0.010*SL 0.082 + 0.009*SL 0.074 + 0.009*SL
tF 0.128 0.107 + 0.010*SL 0.113 + 0.009*SL 0.130 + 0.008*SL
tPLH 0.453 0.438 + 0.007*SL 0.447 + 0.005*SL 0.463 + 0.004*SL
tPHL 0.494 0.475 + 0.009*SL 0.485 + 0.007*SL 0.518 + 0.005*SL
C to Y tR 0.099 0.079 + 0.010*SL 0.083 + 0.009*SL 0.076 + 0.009*SL
tF 0.128 0.108 + 0.010*SL 0.111 + 0.009*SL 0.131 + 0.008*SL
tPLH 0.487 0.472 + 0.007*SL 0.480 + 0.005*SL 0.497 + 0.004*SL
tPHL 0.506 0.487 + 0.009*SL 0.497 + 0.007*SL 0.530 + 0.005*SL
D to Y tR 0.101 0.081 + 0.010*SL 0.084 + 0.009*SL 0.077 + 0.009*SL
tF 0.127 0.105 + 0.011*SL 0.114 + 0.009*SL 0.131 + 0.008*SL
tPLH 0.516 0.501 + 0.007*SL 0.509 + 0.005*SL 0.527 + 0.004*SL
tPHL 0.513 0.494 + 0.009*SL 0.504 + 0.007*SL 0.537 + 0.005*SL
E to Y tR 0.100 0.080 + 0.010*SL 0.084 + 0.009*SL 0.076 + 0.009*SL
tF 0.128 0.108 + 0.010*SL 0.113 + 0.009*SL 0.131 + 0.008*SL
tPLH 0.428 0.413 + 0.007*SL 0.421 + 0.005*SL 0.438 + 0.004*SL
tPHL 0.487 0.468 + 0.009*SL 0.478 + 0.007*SL 0.511 + 0.005*SL
F to Y tR 0.100 0.080 + 0.010*SL 0.084 + 0.009*SL 0.077 + 0.009*SL
tF 0.128 0.107 + 0.010*SL 0.113 + 0.009*SL 0.130 + 0.008*SL
tPLH 0.466 0.451 + 0.007*SL 0.459 + 0.005*SL 0.476 + 0.004*SL
tPHL 0.504 0.485 + 0.009*SL 0.496 + 0.007*SL 0.529 + 0.005*SL
G to Y tR 0.102 0.083 + 0.009*SL 0.084 + 0.009*SL 0.078 + 0.009*SL
tF 0.128 0.106 + 0.011*SL 0.113 + 0.009*SL 0.130 + 0.008*SL
tPLH 0.500 0.485 + 0.007*SL 0.494 + 0.005*SL 0.511 + 0.004*SL
tPHL 0.517 0.498 + 0.009*SL 0.508 + 0.007*SL 0.541 + 0.005*SL
H to Y tR 0.103 0.083 + 0.010*SL 0.087 + 0.009*SL 0.079 + 0.009*SL
tF 0.128 0.107 + 0.011*SL 0.114 + 0.009*SL 0.131 + 0.008*SL
tPLH 0.529 0.514 + 0.008*SL 0.523 + 0.005*SL 0.540 + 0.004*SL
tPHL 0.524 0.505 + 0.009*SL 0.515 + 0.007*SL 0.548 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-46 Samsung ASIC
NR2DH/NR2/NR2D2/NR2D2B/NR2D4/NR2A
2-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR2DH
NR2
Input Load (SL)
NR2DH NR2 NR2D2 NR2D2B NR2D4 NR2A
ABABABABABAB
0.5 0.5 1.0 1.0 1.9 2.1 1.0 1.1 1.0 1.1 1.5 1.7
Gate Count
NR2DH NR2 NR2D2 NR2D2B NR2D4 NR2A
1.00 1.00 1.67 2.33 3.00 1.67
Y
A
B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.497 0.171 + 0.163*SL 0.145 + 0.169*SL 0.139 + 0.170*SL
tF 0.213 0.100 + 0.057*SL 0.080 + 0.062*SL 0.060 + 0.064*SL
tPLH 0.275 0.122 + 0.076*SL 0.121 + 0.076*SL 0.122 + 0.076*SL
tPHL 0.159 0.087 + 0.036*SL 0.097 + 0.033*SL 0.097 + 0.033*SL
B to Y tR 0.490 0.159 + 0.166*SL 0.145 + 0.169*SL 0.140 + 0.170*SL
tF 0.234 0.120 + 0.057*SL 0.101 + 0.062*SL 0.082 + 0.064*SL
tPLH 0.286 0.132 + 0.077*SL 0.133 + 0.077*SL 0.134 + 0.076*SL
tPHL 0.174 0.105 + 0.035*SL 0.110 + 0.033*SL 0.111 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.292 0.152 + 0.070*SL 0.138 + 0.074*SL 0.122 + 0.076*SL
tF 0.153 0.096 + 0.028*SL 0.086 + 0.031*SL 0.073 + 0.033*SL
tPLH 0.172 0.102 + 0.035*SL 0.105 + 0.034*SL 0.105 + 0.034*SL
tPHL 0.118 0.073 + 0.023*SL 0.093 + 0.018*SL 0.094 + 0.018*SL
B to Y tR 0.281 0.136 + 0.073*SL 0.126 + 0.075*SL 0.118 + 0.076*SL
tF 0.176 0.119 + 0.028*SL 0.108 + 0.031*SL 0.096 + 0.033*SL
tPLH 0.180 0.109 + 0.036*SL 0.113 + 0.035*SL 0.114 + 0.034*SL
tPHL 0.138 0.097 + 0.020*SL 0.108 + 0.018*SL 0.109 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABY
001
010
100
110
Samsung ASIC 3-47 STDM110
NR2DH/NR2/NR2D2/NR2D2B/NR2D4/NR2A
2-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR2D2
NR2D2B
NR2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.209 0.142 + 0.034*SL 0.132 + 0.036*SL 0.113 + 0.038*SL
tF 0.116 0.084 + 0.016*SL 0.090 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.128 0.087 + 0.020*SL 0.100 + 0.017*SL 0.099 + 0.017*SL
tPHL 0.088 0.059 + 0.014*SL 0.077 + 0.010*SL 0.090 + 0.009*SL
B to Y tR 0.195 0.125 + 0.035*SL 0.116 + 0.037*SL 0.106 + 0.038*SL
tF 0.142 0.114 + 0.014*SL 0.111 + 0.015*SL 0.096 + 0.016*SL
tPLH 0.137 0.097 + 0.020*SL 0.106 + 0.017*SL 0.108 + 0.017*SL
tPHL 0.112 0.087 + 0.012*SL 0.099 + 0.009*SL 0.105 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.091 0.056 + 0.018*SL 0.052 + 0.019*SL 0.045 + 0.019*SL
tF 0.089 0.054 + 0.018*SL 0.060 + 0.016*SL 0.055 + 0.017*SL
tPLH 0.277 0.256 + 0.011*SL 0.262 + 0.009*SL 0.266 + 0.009*SL
tPHL 0.267 0.243 + 0.012*SL 0.253 + 0.010*SL 0.264 + 0.009*SL
B to Y tR 0.091 0.056 + 0.018*SL 0.052 + 0.018*SL 0.044 + 0.019*SL
tF 0.092 0.059 + 0.017*SL 0.060 + 0.016*SL 0.056 + 0.017*SL
tPLH 0.287 0.266 + 0.011*SL 0.272 + 0.009*SL 0.276 + 0.009*SL
tPHL 0.292 0.267 + 0.012*SL 0.278 + 0.010*SL 0.289 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.086 0.067 + 0.009*SL 0.069 + 0.009*SL 0.058 + 0.009*SL
tF 0.094 0.074 + 0.010*SL 0.081 + 0.008*SL 0.084 + 0.008*SL
tPLH 0.307 0.294 + 0.007*SL 0.300 + 0.005*SL 0.311 + 0.004*SL
tPHL 0.311 0.295 + 0.008*SL 0.304 + 0.006*SL 0.326 + 0.005*SL
B to Y tR 0.085 0.067 + 0.009*SL 0.066 + 0.009*SL 0.059 + 0.009*SL
tF 0.094 0.074 + 0.010*SL 0.081 + 0.008*SL 0.084 + 0.008*SL
tPLH 0.317 0.304 + 0.007*SL 0.310 + 0.005*SL 0.321 + 0.004*SL
tPHL 0.336 0.319 + 0.008*SL 0.329 + 0.006*SL 0.351 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-48 Samsung ASIC
NR2DH/NR2/NR2D2/NR2D2B/NR2D4/NR2A
2-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR2A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.205 0.138 + 0.034*SL 0.128 + 0.036*SL 0.116 + 0.038*SL
tF 0.154 0.096 + 0.029*SL 0.088 + 0.031*SL 0.075 + 0.033*SL
tPLH 0.115 0.071 + 0.022*SL 0.088 + 0.018*SL 0.089 + 0.018*SL
tPHL 0.131 0.089 + 0.021*SL 0.103 + 0.018*SL 0.104 + 0.018*SL
B to Y tR 0.187 0.117 + 0.035*SL 0.107 + 0.038*SL 0.100 + 0.038*SL
tF 0.195 0.134 + 0.030*SL 0.127 + 0.032*SL 0.118 + 0.033*SL
tPLH 0.129 0.088 + 0.020*SL 0.098 + 0.018*SL 0.100 + 0.018*SL
tPHL 0.170 0.132 + 0.019*SL 0.136 + 0.018*SL 0.137 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-49 STDM110
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A
3-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Logic Symbol
Cell Data Input Load (SL)
NR3DH NR3 NR3D2 NR3D2B NR3D4 NR3A
ABCABCABCABCABCABC
0.6 0.6 0.6 0.9 0.9 0.9 1.8 2.0 2.0 0.9 0.9 1.0 0.9 0.9 1.0 1.4 1.6 1.7
Gate Count
NR3DH NR3 NR3D2 NR3D2B NR3D4 NR3A
1.33 1.33 2.33 2.67 3.33 2.00
Y
A
B
C
Truth Table
ABCY
0001
Other States 0
STDM110 3-50 Samsung ASIC
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A
3-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR3DH
NR3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.626 0.265 + 0.181*SL 0.244 + 0.186*SL 0.246 + 0.185*SL
tF 0.227 0.110 + 0.058*SL 0.093 + 0.062*SL 0.077 + 0.065*SL
tPLH 0.307 0.139 + 0.084*SL 0.139 + 0.084*SL 0.140 + 0.084*SL
tPHL 0.175 0.106 + 0.035*SL 0.111 + 0.033*SL 0.111 + 0.033*SL
B to Y tR 0.628 0.265 + 0.182*SL 0.252 + 0.185*SL 0.248 + 0.185*SL
tF 0.253 0.135 + 0.059*SL 0.120 + 0.063*SL 0.105 + 0.065*SL
tPLH 0.350 0.180 + 0.085*SL 0.183 + 0.084*SL 0.185 + 0.084*SL
tPHL 0.197 0.129 + 0.034*SL 0.131 + 0.033*SL 0.132 + 0.033*SL
C to Y tR 0.625 0.259 + 0.183*SL 0.251 + 0.185*SL 0.248 + 0.185*SL
tF 0.283 0.164 + 0.059*SL 0.151 + 0.063*SL 0.136 + 0.065*SL
tPLH 0.367 0.198 + 0.085*SL 0.200 + 0.084*SL 0.202 + 0.084*SL
tPHL 0.207 0.136 + 0.035*SL 0.140 + 0.034*SL 0.145 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.459 0.238 + 0.111*SL 0.225 + 0.114*SL 0.211 + 0.116*SL
tF 0.182 0.109 + 0.037*SL 0.094 + 0.040*SL 0.082 + 0.042*SL
tPLH 0.229 0.126 + 0.051*SL 0.124 + 0.052*SL 0.124 + 0.052*SL
tPHL 0.146 0.097 + 0.025*SL 0.107 + 0.022*SL 0.107 + 0.022*SL
B to Y tR 0.459 0.236 + 0.112*SL 0.228 + 0.114*SL 0.218 + 0.115*SL
tF 0.208 0.132 + 0.038*SL 0.121 + 0.041*SL 0.110 + 0.042*SL
tPLH 0.267 0.162 + 0.053*SL 0.163 + 0.052*SL 0.165 + 0.052*SL
tPHL 0.169 0.123 + 0.023*SL 0.127 + 0.022*SL 0.128 + 0.022*SL
C to Y tR 0.455 0.230 + 0.113*SL 0.223 + 0.114*SL 0.217 + 0.115*SL
tF 0.237 0.160 + 0.039*SL 0.153 + 0.040*SL 0.140 + 0.042*SL
tPLH 0.284 0.178 + 0.053*SL 0.180 + 0.052*SL 0.181 + 0.052*SL
tPHL 0.180 0.133 + 0.024*SL 0.136 + 0.023*SL 0.140 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-51 STDM110
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A
3-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR3D2
NR3D2B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.318 0.210 + 0.054*SL 0.202 + 0.056*SL 0.182 + 0.058*SL
tF 0.134 0.098 + 0.018*SL 0.093 + 0.019*SL 0.076 + 0.021*SL
tPLH 0.161 0.110 + 0.026*SL 0.109 + 0.026*SL 0.108 + 0.026*SL
tPHL 0.110 0.079 + 0.016*SL 0.095 + 0.011*SL 0.100 + 0.011*SL
B to Y tR 0.317 0.208 + 0.054*SL 0.200 + 0.056*SL 0.188 + 0.057*SL
tF 0.160 0.125 + 0.018*SL 0.117 + 0.020*SL 0.103 + 0.021*SL
tPLH 0.199 0.144 + 0.027*SL 0.149 + 0.026*SL 0.151 + 0.026*SL
tPHL 0.137 0.110 + 0.013*SL 0.119 + 0.011*SL 0.121 + 0.011*SL
C to Y tR 0.311 0.201 + 0.055*SL 0.194 + 0.057*SL 0.185 + 0.058*SL
tF 0.189 0.152 + 0.018*SL 0.147 + 0.020*SL 0.134 + 0.021*SL
tPLH 0.216 0.162 + 0.027*SL 0.164 + 0.026*SL 0.166 + 0.026*SL
tPHL 0.147 0.121 + 0.013*SL 0.127 + 0.012*SL 0.131 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.061 + 0.018*SL 0.059 + 0.018*SL 0.049 + 0.019*SL
tF 0.090 0.055 + 0.018*SL 0.060 + 0.016*SL 0.054 + 0.017*SL
tPLH 0.339 0.317 + 0.011*SL 0.325 + 0.009*SL 0.329 + 0.009*SL
tPHL 0.297 0.272 + 0.012*SL 0.282 + 0.010*SL 0.293 + 0.009*SL
B to Y tR 0.096 0.061 + 0.018*SL 0.059 + 0.018*SL 0.049 + 0.019*SL
tF 0.092 0.059 + 0.017*SL 0.060 + 0.016*SL 0.054 + 0.017*SL
tPLH 0.378 0.356 + 0.011*SL 0.364 + 0.009*SL 0.369 + 0.009*SL
tPHL 0.324 0.299 + 0.012*SL 0.309 + 0.010*SL 0.320 + 0.009*SL
C to Y tR 0.096 0.061 + 0.018*SL 0.059 + 0.018*SL 0.049 + 0.019*SL
tF 0.092 0.058 + 0.017*SL 0.062 + 0.016*SL 0.055 + 0.017*SL
tPLH 0.398 0.376 + 0.011*SL 0.384 + 0.009*SL 0.388 + 0.009*SL
tPHL 0.342 0.317 + 0.013*SL 0.328 + 0.010*SL 0.338 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-52 Samsung ASIC
NR3DH/NR3/NR3D2/NR3D2B/NR3D4/NR3A
3-Input NOR with 0.5X/1X/2X/2X(Buffered)/4X/(2X/1X) Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR3D4
NR3A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.092 0.072 + 0.010*SL 0.076 + 0.009*SL 0.063 + 0.009*SL
tF 0.091 0.071 + 0.010*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.368 0.354 + 0.007*SL 0.361 + 0.005*SL 0.374 + 0.004*SL
tPHL 0.333 0.317 + 0.008*SL 0.326 + 0.006*SL 0.347 + 0.005*SL
B to Y tR 0.091 0.072 + 0.010*SL 0.076 + 0.009*SL 0.064 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.077 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.407 0.393 + 0.007*SL 0.400 + 0.005*SL 0.413 + 0.004*SL
tPHL 0.360 0.344 + 0.008*SL 0.354 + 0.006*SL 0.375 + 0.005*SL
C to Y tR 0.091 0.072 + 0.010*SL 0.076 + 0.009*SL 0.064 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.079 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.426 0.413 + 0.007*SL 0.420 + 0.005*SL 0.432 + 0.004*SL
tPHL 0.380 0.363 + 0.008*SL 0.373 + 0.006*SL 0.394 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.304 0.195 + 0.054*SL 0.187 + 0.057*SL 0.176 + 0.058*SL
tF 0.186 0.109 + 0.038*SL 0.099 + 0.041*SL 0.086 + 0.042*SL
tPLH 0.146 0.091 + 0.027*SL 0.094 + 0.027*SL 0.094 + 0.027*SL
tPHL 0.161 0.114 + 0.024*SL 0.120 + 0.022*SL 0.121 + 0.022*SL
B to Y tR 0.301 0.190 + 0.056*SL 0.182 + 0.057*SL 0.176 + 0.058*SL
tF 0.236 0.156 + 0.040*SL 0.149 + 0.042*SL 0.141 + 0.043*SL
tPLH 0.188 0.131 + 0.028*SL 0.137 + 0.027*SL 0.138 + 0.027*SL
tPHL 0.208 0.162 + 0.023*SL 0.164 + 0.023*SL 0.167 + 0.022*SL
C to Y tR 0.295 0.183 + 0.056*SL 0.176 + 0.058*SL 0.170 + 0.059*SL
tF 0.292 0.211 + 0.041*SL 0.207 + 0.042*SL 0.200 + 0.043*SL
tPLH 0.207 0.151 + 0.028*SL 0.155 + 0.027*SL 0.156 + 0.027*SL
tPHL 0.234 0.184 + 0.025*SL 0.189 + 0.024*SL 0.195 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-53 STDM110
NR4DH/NR4/NR4D2/NR4D4
4-Input NOR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR4DH
Input Load (SL)
NR4DH NR4 NR4D2 NR4D4
ABCDABCDABCDABCD
0.5 0.6 0.6 0.6 1.0 1.0 1.0 1.1 1.0 1.0 1.0 1.1 1.0 1.0 1.0 1.1
Gate Count
NR4DH NR4 NR4D2 NR4D4
3.00 3.00 3.33 4.00
Y
A
B
C
D
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.257 0.095 + 0.081*SL 0.086 + 0.083*SL 0.078 + 0.084*SL
tF 0.213 0.089 + 0.062*SL 0.085 + 0.063*SL 0.076 + 0.064*SL
tPLH 0.422 0.343 + 0.039*SL 0.350 + 0.038*SL 0.351 + 0.038*SL
tPHL 0.379 0.306 + 0.037*SL 0.318 + 0.034*SL 0.322 + 0.033*SL
B to Y tR 0.257 0.093 + 0.082*SL 0.085 + 0.084*SL 0.079 + 0.084*SL
tF 0.213 0.089 + 0.062*SL 0.085 + 0.063*SL 0.076 + 0.064*SL
tPLH 0.434 0.356 + 0.039*SL 0.362 + 0.038*SL 0.364 + 0.038*SL
tPHL 0.401 0.327 + 0.037*SL 0.340 + 0.034*SL 0.344 + 0.033*SL
C to Y tR 0.257 0.094 + 0.081*SL 0.085 + 0.084*SL 0.078 + 0.085*SL
tF 0.218 0.095 + 0.061*SL 0.089 + 0.063*SL 0.079 + 0.064*SL
tPLH 0.413 0.334 + 0.040*SL 0.342 + 0.038*SL 0.343 + 0.038*SL
tPHL 0.399 0.324 + 0.038*SL 0.339 + 0.034*SL 0.344 + 0.033*SL
D to Y tR 0.257 0.094 + 0.081*SL 0.085 + 0.084*SL 0.078 + 0.084*SL
tF 0.218 0.095 + 0.061*SL 0.089 + 0.063*SL 0.079 + 0.064*SL
tPLH 0.427 0.348 + 0.040*SL 0.355 + 0.038*SL 0.357 + 0.038*SL
tPHL 0.422 0.347 + 0.038*SL 0.362 + 0.034*SL 0.367 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
00001
Other States 0
STDM110 3-54 Samsung ASIC
NR4DH/NR4/NR4D2/NR4D4
4-Input NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR4
NR4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.148 0.075 + 0.036*SL 0.072 + 0.037*SL 0.066 + 0.038*SL
tF 0.137 0.071 + 0.033*SL 0.072 + 0.033*SL 0.065 + 0.034*SL
tPLH 0.322 0.283 + 0.019*SL 0.291 + 0.018*SL 0.294 + 0.017*SL
tPHL 0.306 0.265 + 0.021*SL 0.275 + 0.018*SL 0.280 + 0.018*SL
B to Y tR 0.149 0.077 + 0.036*SL 0.072 + 0.037*SL 0.067 + 0.038*SL
tF 0.137 0.071 + 0.033*SL 0.070 + 0.033*SL 0.067 + 0.034*SL
tPLH 0.331 0.292 + 0.019*SL 0.299 + 0.018*SL 0.302 + 0.017*SL
tPHL 0.330 0.288 + 0.021*SL 0.298 + 0.018*SL 0.303 + 0.018*SL
C to Y tR 0.148 0.076 + 0.036*SL 0.071 + 0.037*SL 0.066 + 0.038*SL
tF 0.141 0.076 + 0.032*SL 0.075 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.316 0.277 + 0.020*SL 0.285 + 0.018*SL 0.288 + 0.017*SL
tPHL 0.318 0.276 + 0.021*SL 0.286 + 0.019*SL 0.292 + 0.018*SL
D to Y tR 0.148 0.076 + 0.036*SL 0.072 + 0.037*SL 0.066 + 0.038*SL
tF 0.141 0.076 + 0.032*SL 0.075 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.325 0.286 + 0.020*SL 0.294 + 0.018*SL 0.297 + 0.017*SL
tPHL 0.343 0.300 + 0.021*SL 0.311 + 0.019*SL 0.317 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.070 + 0.018*SL 0.070 + 0.018*SL 0.066 + 0.019*SL
tF 0.101 0.066 + 0.017*SL 0.070 + 0.016*SL 0.067 + 0.017*SL
tPLH 0.319 0.295 + 0.012*SL 0.305 + 0.010*SL 0.316 + 0.009*SL
tPHL 0.296 0.270 + 0.013*SL 0.282 + 0.010*SL 0.295 + 0.009*SL
B to Y tR 0.108 0.071 + 0.019*SL 0.073 + 0.018*SL 0.066 + 0.019*SL
tF 0.101 0.066 + 0.017*SL 0.070 + 0.016*SL 0.068 + 0.017*SL
tPLH 0.328 0.304 + 0.012*SL 0.314 + 0.010*SL 0.325 + 0.009*SL
tPHL 0.320 0.293 + 0.013*SL 0.305 + 0.010*SL 0.319 + 0.009*SL
C to Y tR 0.106 0.069 + 0.019*SL 0.071 + 0.018*SL 0.064 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.075 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.314 0.289 + 0.012*SL 0.300 + 0.010*SL 0.310 + 0.009*SL
tPHL 0.310 0.284 + 0.013*SL 0.296 + 0.010*SL 0.311 + 0.009*SL
D to Y tR 0.106 0.069 + 0.019*SL 0.071 + 0.018*SL 0.065 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.075 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.323 0.299 + 0.012*SL 0.309 + 0.010*SL 0.320 + 0.009*SL
tPHL 0.336 0.309 + 0.013*SL 0.321 + 0.010*SL 0.336 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-55 STDM110
NR4DH/NR4/NR4D2/NR4D4
4-Input NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR4D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.087 + 0.010*SL 0.091 + 0.009*SL 0.092 + 0.009*SL
tF 0.101 0.082 + 0.009*SL 0.086 + 0.009*SL 0.093 + 0.008*SL
tPLH 0.369 0.354 + 0.008*SL 0.362 + 0.006*SL 0.383 + 0.005*SL
tPHL 0.335 0.318 + 0.008*SL 0.327 + 0.006*SL 0.351 + 0.005*SL
B to Y tR 0.107 0.086 + 0.010*SL 0.091 + 0.009*SL 0.092 + 0.009*SL
tF 0.101 0.082 + 0.010*SL 0.087 + 0.009*SL 0.093 + 0.008*SL
tPLH 0.378 0.363 + 0.008*SL 0.371 + 0.006*SL 0.392 + 0.005*SL
tPHL 0.358 0.342 + 0.008*SL 0.351 + 0.006*SL 0.375 + 0.005*SL
C to Y tR 0.107 0.086 + 0.010*SL 0.090 + 0.009*SL 0.092 + 0.009*SL
tF 0.106 0.087 + 0.010*SL 0.092 + 0.008*SL 0.099 + 0.008*SL
tPLH 0.360 0.344 + 0.008*SL 0.352 + 0.006*SL 0.374 + 0.005*SL
tPHL 0.345 0.328 + 0.008*SL 0.338 + 0.006*SL 0.363 + 0.005*SL
D to Y tR 0.107 0.086 + 0.010*SL 0.091 + 0.009*SL 0.091 + 0.009*SL
tF 0.106 0.087 + 0.010*SL 0.092 + 0.009*SL 0.099 + 0.008*SL
tPLH 0.369 0.354 + 0.008*SL 0.362 + 0.006*SL 0.384 + 0.005*SL
tPHL 0.370 0.353 + 0.008*SL 0.363 + 0.006*SL 0.388 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-56 Samsung ASIC
NR5/NR5D2/NR5D4
5-Input NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
NR5 NR5D2 NR5D4 NR5 NR5D2 NR5D4
ABCDEABCDEABCDE
0.9 0.9 1.0 1.0 1.1 0.9 0.9 1.0 1.0 1.1 0.9 0.9 1.0 1.0 1.1 3.33 3.67 4.33
Y
B
C
D
E
A
Truth Table
ABCDEY
000001
Other States 0
Samsung ASIC 3-57 STDM110
NR5/NR5D2/NR5D4
5-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR5
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.152 0.080 + 0.036*SL 0.074 + 0.037*SL 0.069 + 0.038*SL
tF 0.137 0.072 + 0.033*SL 0.069 + 0.033*SL 0.066 + 0.034*SL
tPLH 0.379 0.340 + 0.020*SL 0.347 + 0.018*SL 0.351 + 0.017*SL
tPHL 0.337 0.296 + 0.021*SL 0.305 + 0.018*SL 0.310 + 0.018*SL
B to Y tR 0.152 0.080 + 0.036*SL 0.075 + 0.037*SL 0.069 + 0.038*SL
tF 0.137 0.072 + 0.033*SL 0.071 + 0.033*SL 0.065 + 0.034*SL
tPLH 0.417 0.378 + 0.020*SL 0.386 + 0.018*SL 0.389 + 0.017*SL
tPHL 0.364 0.322 + 0.021*SL 0.332 + 0.018*SL 0.337 + 0.018*SL
C to Y tR 0.152 0.080 + 0.036*SL 0.075 + 0.037*SL 0.069 + 0.038*SL
tF 0.138 0.072 + 0.033*SL 0.071 + 0.033*SL 0.067 + 0.034*SL
tPLH 0.436 0.397 + 0.020*SL 0.405 + 0.018*SL 0.408 + 0.017*SL
tPHL 0.381 0.339 + 0.021*SL 0.349 + 0.018*SL 0.354 + 0.018*SL
D to Y tR 0.147 0.074 + 0.036*SL 0.069 + 0.037*SL 0.066 + 0.038*SL
tF 0.141 0.076 + 0.032*SL 0.075 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.312 0.273 + 0.020*SL 0.281 + 0.018*SL 0.284 + 0.017*SL
tPHL 0.318 0.276 + 0.021*SL 0.286 + 0.019*SL 0.292 + 0.018*SL
E to Y tR 0.147 0.075 + 0.036*SL 0.071 + 0.037*SL 0.065 + 0.038*SL
tF 0.141 0.076 + 0.032*SL 0.075 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.321 0.282 + 0.019*SL 0.290 + 0.018*SL 0.293 + 0.017*SL
tPHL 0.343 0.301 + 0.021*SL 0.311 + 0.019*SL 0.317 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-58 Samsung ASIC
NR5/NR5D2/NR5D4
5-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.112 0.076 + 0.018*SL 0.077 + 0.018*SL 0.070 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.073 + 0.016*SL 0.071 + 0.017*SL
tPLH 0.387 0.362 + 0.012*SL 0.373 + 0.010*SL 0.384 + 0.009*SL
tPHL 0.340 0.314 + 0.013*SL 0.326 + 0.010*SL 0.341 + 0.009*SL
B to Y tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.069 + 0.018*SL 0.074 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.426 0.401 + 0.012*SL 0.412 + 0.010*SL 0.423 + 0.009*SL
tPHL 0.367 0.340 + 0.013*SL 0.353 + 0.010*SL 0.367 + 0.009*SL
C to Y tR 0.112 0.076 + 0.018*SL 0.076 + 0.018*SL 0.070 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.074 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.444 0.420 + 0.012*SL 0.430 + 0.010*SL 0.442 + 0.009*SL
tPHL 0.385 0.358 + 0.014*SL 0.371 + 0.010*SL 0.386 + 0.009*SL
D to Y tR 0.106 0.069 + 0.019*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.079 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.313 0.288 + 0.012*SL 0.299 + 0.010*SL 0.310 + 0.009*SL
tPHL 0.318 0.291 + 0.014*SL 0.304 + 0.011*SL 0.319 + 0.009*SL
E to Y tR 0.106 0.069 + 0.019*SL 0.071 + 0.018*SL 0.065 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.079 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.322 0.298 + 0.012*SL 0.308 + 0.010*SL 0.319 + 0.009*SL
tPHL 0.343 0.315 + 0.014*SL 0.329 + 0.011*SL 0.344 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-59 STDM110
NR5/NR5D2/NR5D4
5-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR5D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.111 0.090 + 0.011*SL 0.096 + 0.009*SL 0.096 + 0.009*SL
tF 0.111 0.091 + 0.010*SL 0.097 + 0.009*SL 0.105 + 0.008*SL
tPLH 0.440 0.424 + 0.008*SL 0.432 + 0.006*SL 0.454 + 0.005*SL
tPHL 0.398 0.381 + 0.009*SL 0.390 + 0.006*SL 0.417 + 0.005*SL
B to Y tR 0.111 0.090 + 0.011*SL 0.096 + 0.009*SL 0.096 + 0.009*SL
tF 0.111 0.090 + 0.010*SL 0.096 + 0.009*SL 0.107 + 0.008*SL
tPLH 0.478 0.463 + 0.008*SL 0.471 + 0.006*SL 0.493 + 0.005*SL
tPHL 0.425 0.408 + 0.009*SL 0.417 + 0.006*SL 0.444 + 0.005*SL
C to Y tR 0.112 0.090 + 0.011*SL 0.096 + 0.009*SL 0.096 + 0.009*SL
tF 0.111 0.090 + 0.010*SL 0.098 + 0.009*SL 0.108 + 0.008*SL
tPLH 0.497 0.481 + 0.008*SL 0.490 + 0.006*SL 0.512 + 0.005*SL
tPHL 0.444 0.427 + 0.009*SL 0.436 + 0.006*SL 0.463 + 0.005*SL
D to Y tR 0.105 0.084 + 0.011*SL 0.090 + 0.009*SL 0.090 + 0.009*SL
tF 0.116 0.094 + 0.011*SL 0.103 + 0.009*SL 0.111 + 0.008*SL
tPLH 0.353 0.337 + 0.008*SL 0.345 + 0.006*SL 0.367 + 0.005*SL
tPHL 0.372 0.354 + 0.009*SL 0.364 + 0.006*SL 0.392 + 0.005*SL
E to Y tR 0.106 0.086 + 0.010*SL 0.089 + 0.009*SL 0.091 + 0.009*SL
tF 0.116 0.095 + 0.011*SL 0.103 + 0.009*SL 0.112 + 0.008*SL
tPLH 0.362 0.347 + 0.008*SL 0.355 + 0.006*SL 0.376 + 0.005*SL
tPHL 0.397 0.379 + 0.009*SL 0.389 + 0.006*SL 0.417 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-60 Samsung ASIC
NR6/NR6D2/NR6D4
6-Input NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
NR6 NR6D2 NR6D4
ABCDEFABCDEFABCDEF
0.9 0.9 1.0 0.9 1.0 1.0 0.9 0.9 1.0 0.9 1.0 1.0 0.9 0.9 1.0 0.9 1.0 1.0
Gate Count
NR6 NR6D2 NR6D4
3.67 4.00 4.67
Y
B
C
D
E
A
F
Truth Table
ABCDEFY
0000001
Other States 0
Samsung ASIC 3-61 STDM110
NR6/NR6D2/NR6D4
6-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR6
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.152 0.081 + 0.036*SL 0.074 + 0.037*SL 0.070 + 0.038*SL
tF 0.136 0.071 + 0.033*SL 0.069 + 0.033*SL 0.066 + 0.034*SL
tPLH 0.381 0.342 + 0.020*SL 0.350 + 0.018*SL 0.354 + 0.017*SL
tPHL 0.335 0.294 + 0.021*SL 0.303 + 0.018*SL 0.308 + 0.018*SL
B to Y tR 0.152 0.081 + 0.036*SL 0.074 + 0.037*SL 0.070 + 0.038*SL
tF 0.137 0.072 + 0.033*SL 0.070 + 0.033*SL 0.065 + 0.034*SL
tPLH 0.420 0.381 + 0.020*SL 0.389 + 0.018*SL 0.392 + 0.017*SL
tPHL 0.362 0.320 + 0.021*SL 0.330 + 0.018*SL 0.335 + 0.018*SL
C to Y tR 0.152 0.081 + 0.036*SL 0.075 + 0.037*SL 0.070 + 0.038*SL
tF 0.137 0.072 + 0.033*SL 0.070 + 0.033*SL 0.067 + 0.034*SL
tPLH 0.439 0.399 + 0.020*SL 0.408 + 0.018*SL 0.411 + 0.017*SL
tPHL 0.379 0.337 + 0.021*SL 0.347 + 0.018*SL 0.353 + 0.018*SL
D to Y tR 0.151 0.079 + 0.036*SL 0.075 + 0.037*SL 0.069 + 0.038*SL
tF 0.140 0.076 + 0.032*SL 0.074 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.365 0.325 + 0.020*SL 0.334 + 0.018*SL 0.338 + 0.017*SL
tPHL 0.347 0.305 + 0.021*SL 0.315 + 0.019*SL 0.321 + 0.018*SL
E to Y tR 0.151 0.079 + 0.036*SL 0.075 + 0.037*SL 0.069 + 0.038*SL
tF 0.141 0.075 + 0.033*SL 0.075 + 0.033*SL 0.068 + 0.034*SL
tPLH 0.403 0.364 + 0.020*SL 0.372 + 0.018*SL 0.376 + 0.017*SL
tPHL 0.375 0.333 + 0.021*SL 0.343 + 0.019*SL 0.349 + 0.018*SL
F to Y tR 0.151 0.078 + 0.036*SL 0.075 + 0.037*SL 0.069 + 0.038*SL
tF 0.142 0.077 + 0.032*SL 0.076 + 0.033*SL 0.069 + 0.034*SL
tPLH 0.422 0.383 + 0.020*SL 0.391 + 0.018*SL 0.395 + 0.017*SL
tPHL 0.393 0.351 + 0.021*SL 0.362 + 0.019*SL 0.367 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-62 Samsung ASIC
NR6/NR6D2/NR6D4
6-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR6D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.070 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.073 + 0.016*SL 0.071 + 0.017*SL
tPLH 0.387 0.363 + 0.012*SL 0.373 + 0.010*SL 0.385 + 0.009*SL
tPHL 0.340 0.314 + 0.013*SL 0.326 + 0.010*SL 0.340 + 0.009*SL
B to Y tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.069 + 0.017*SL 0.074 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.426 0.401 + 0.012*SL 0.412 + 0.010*SL 0.423 + 0.009*SL
tPHL 0.367 0.341 + 0.013*SL 0.353 + 0.010*SL 0.367 + 0.009*SL
C to Y tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.070 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.075 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.445 0.420 + 0.012*SL 0.431 + 0.010*SL 0.442 + 0.009*SL
tPHL 0.385 0.358 + 0.013*SL 0.371 + 0.010*SL 0.385 + 0.009*SL
D to Y tR 0.110 0.073 + 0.019*SL 0.075 + 0.018*SL 0.069 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.078 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.367 0.342 + 0.012*SL 0.353 + 0.010*SL 0.365 + 0.009*SL
tPHL 0.351 0.323 + 0.014*SL 0.336 + 0.011*SL 0.352 + 0.009*SL
E to Y tR 0.110 0.072 + 0.019*SL 0.075 + 0.018*SL 0.068 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.405 0.380 + 0.012*SL 0.392 + 0.010*SL 0.403 + 0.009*SL
tPHL 0.378 0.351 + 0.014*SL 0.364 + 0.011*SL 0.380 + 0.009*SL
F to Y tR 0.111 0.073 + 0.019*SL 0.076 + 0.018*SL 0.068 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.081 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.424 0.399 + 0.012*SL 0.410 + 0.010*SL 0.422 + 0.009*SL
tPHL 0.397 0.370 + 0.014*SL 0.383 + 0.011*SL 0.399 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-63 STDM110
NR6/NR6D2/NR6D4
6-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR6D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.111 0.091 + 0.010*SL 0.095 + 0.009*SL 0.096 + 0.009*SL
tF 0.111 0.090 + 0.010*SL 0.097 + 0.009*SL 0.105 + 0.008*SL
tPLH 0.440 0.425 + 0.008*SL 0.433 + 0.006*SL 0.455 + 0.005*SL
tPHL 0.398 0.381 + 0.009*SL 0.390 + 0.006*SL 0.417 + 0.005*SL
B to Y tR 0.111 0.090 + 0.011*SL 0.096 + 0.009*SL 0.096 + 0.009*SL
tF 0.110 0.090 + 0.010*SL 0.096 + 0.009*SL 0.107 + 0.008*SL
tPLH 0.479 0.464 + 0.008*SL 0.472 + 0.006*SL 0.494 + 0.005*SL
tPHL 0.425 0.408 + 0.009*SL 0.417 + 0.006*SL 0.444 + 0.005*SL
C to Y tR 0.111 0.090 + 0.011*SL 0.096 + 0.009*SL 0.096 + 0.009*SL
tF 0.111 0.090 + 0.010*SL 0.097 + 0.009*SL 0.107 + 0.008*SL
tPLH 0.498 0.482 + 0.008*SL 0.491 + 0.006*SL 0.513 + 0.005*SL
tPHL 0.444 0.427 + 0.009*SL 0.436 + 0.006*SL 0.463 + 0.005*SL
D to Y tR 0.109 0.088 + 0.010*SL 0.093 + 0.009*SL 0.094 + 0.009*SL
tF 0.117 0.096 + 0.010*SL 0.103 + 0.009*SL 0.112 + 0.008*SL
tPLH 0.410 0.395 + 0.008*SL 0.403 + 0.006*SL 0.426 + 0.005*SL
tPHL 0.404 0.387 + 0.009*SL 0.397 + 0.006*SL 0.425 + 0.005*SL
E to Y tR 0.109 0.087 + 0.011*SL 0.093 + 0.009*SL 0.094 + 0.009*SL
tF 0.116 0.094 + 0.011*SL 0.103 + 0.009*SL 0.111 + 0.008*SL
tPLH 0.449 0.433 + 0.008*SL 0.442 + 0.006*SL 0.464 + 0.005*SL
tPHL 0.432 0.415 + 0.009*SL 0.425 + 0.006*SL 0.453 + 0.005*SL
F to Y tR 0.109 0.087 + 0.011*SL 0.093 + 0.009*SL 0.094 + 0.009*SL
tF 0.116 0.095 + 0.011*SL 0.104 + 0.008*SL 0.112 + 0.008*SL
tPLH 0.468 0.452 + 0.008*SL 0.461 + 0.006*SL 0.483 + 0.005*SL
tPHL 0.452 0.434 + 0.009*SL 0.444 + 0.006*SL 0.473 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-64 Samsung ASIC
NR8/NR8D2/NR8D4
8-Input NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
NR8 NR8
ABCDEFGH
0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 4.67
NR8D2 NR8D2
ABCDEFGH
0.9 0.9 0.9 0.9 0.9 0.9 0.9 1.0 5.00
NR8D4 NR8D4
ABCDEFGH
0.9 0.9 0.9 0.9 0.9 0.9 0.9 1.0 5.67
Y
C
D
E
F
B
G
A
H
Truth Table
ABCDEFGHY
000000001
Other States 0
Samsung ASIC 3-65 STDM110
NR8/NR8D2/NR8D4
8-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.165 0.091 + 0.037*SL 0.091 + 0.037*SL 0.086 + 0.038*SL
tF 0.144 0.077 + 0.033*SL 0.078 + 0.033*SL 0.075 + 0.033*SL
tPLH 0.408 0.364 + 0.022*SL 0.377 + 0.019*SL 0.385 + 0.018*SL
tPHL 0.379 0.335 + 0.022*SL 0.347 + 0.019*SL 0.355 + 0.018*SL
B to Y tR 0.165 0.091 + 0.037*SL 0.092 + 0.037*SL 0.086 + 0.038*SL
tF 0.145 0.079 + 0.033*SL 0.079 + 0.033*SL 0.074 + 0.033*SL
tPLH 0.447 0.404 + 0.022*SL 0.416 + 0.019*SL 0.424 + 0.018*SL
tPHL 0.412 0.368 + 0.022*SL 0.381 + 0.019*SL 0.388 + 0.018*SL
C to Y tR 0.166 0.092 + 0.037*SL 0.092 + 0.037*SL 0.086 + 0.038*SL
tF 0.145 0.079 + 0.033*SL 0.080 + 0.033*SL 0.076 + 0.033*SL
tPLH 0.466 0.422 + 0.022*SL 0.435 + 0.019*SL 0.443 + 0.018*SL
tPHL 0.436 0.392 + 0.022*SL 0.404 + 0.019*SL 0.412 + 0.018*SL
D to Y tR 0.167 0.092 + 0.037*SL 0.093 + 0.037*SL 0.087 + 0.038*SL
tF 0.149 0.083 + 0.033*SL 0.084 + 0.033*SL 0.080 + 0.033*SL
tPLH 0.410 0.366 + 0.022*SL 0.379 + 0.019*SL 0.388 + 0.018*SL
tPHL 0.401 0.356 + 0.022*SL 0.369 + 0.019*SL 0.378 + 0.018*SL
E to Y tR 0.166 0.092 + 0.037*SL 0.092 + 0.037*SL 0.088 + 0.038*SL
tF 0.150 0.085 + 0.032*SL 0.084 + 0.033*SL 0.079 + 0.033*SL
tPLH 0.449 0.405 + 0.022*SL 0.418 + 0.019*SL 0.427 + 0.018*SL
tPHL 0.435 0.390 + 0.022*SL 0.404 + 0.019*SL 0.412 + 0.018*SL
F to Y tR 0.166 0.092 + 0.037*SL 0.092 + 0.037*SL 0.088 + 0.038*SL
tF 0.150 0.086 + 0.032*SL 0.085 + 0.033*SL 0.081 + 0.033*SL
tPLH 0.468 0.424 + 0.022*SL 0.437 + 0.019*SL 0.445 + 0.018*SL
tPHL 0.459 0.414 + 0.022*SL 0.428 + 0.019*SL 0.436 + 0.018*SL
G to Y tR 0.164 0.090 + 0.037*SL 0.090 + 0.037*SL 0.085 + 0.038*SL
tF 0.155 0.088 + 0.033*SL 0.092 + 0.032*SL 0.087 + 0.033*SL
tPLH 0.379 0.335 + 0.022*SL 0.348 + 0.019*SL 0.356 + 0.018*SL
tPHL 0.410 0.364 + 0.023*SL 0.378 + 0.019*SL 0.388 + 0.018*SL
H to Y tR 0.163 0.088 + 0.037*SL 0.090 + 0.037*SL 0.085 + 0.038*SL
tF 0.156 0.091 + 0.032*SL 0.091 + 0.032*SL 0.087 + 0.033*SL
tPLH 0.389 0.345 + 0.022*SL 0.358 + 0.019*SL 0.366 + 0.018*SL
tPHL 0.439 0.393 + 0.023*SL 0.407 + 0.019*SL 0.417 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-66 Samsung ASIC
NR8/NR8D2/NR8D4
8-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.123 0.082 + 0.020*SL 0.089 + 0.019*SL 0.088 + 0.019*SL
tF 0.108 0.070 + 0.019*SL 0.080 + 0.016*SL 0.080 + 0.016*SL
tPLH 0.414 0.385 + 0.014*SL 0.399 + 0.011*SL 0.417 + 0.009*SL
tPHL 0.381 0.353 + 0.014*SL 0.367 + 0.011*SL 0.385 + 0.009*SL
B to Y tR 0.123 0.082 + 0.021*SL 0.089 + 0.019*SL 0.088 + 0.019*SL
tF 0.108 0.071 + 0.019*SL 0.080 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.453 0.425 + 0.014*SL 0.438 + 0.011*SL 0.456 + 0.009*SL
tPHL 0.415 0.386 + 0.014*SL 0.400 + 0.011*SL 0.419 + 0.009*SL
C to Y tR 0.123 0.082 + 0.020*SL 0.089 + 0.019*SL 0.088 + 0.019*SL
tF 0.110 0.072 + 0.019*SL 0.082 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.471 0.442 + 0.014*SL 0.456 + 0.011*SL 0.474 + 0.009*SL
tPHL 0.438 0.410 + 0.014*SL 0.424 + 0.011*SL 0.443 + 0.009*SL
D to Y tR 0.123 0.081 + 0.021*SL 0.089 + 0.019*SL 0.089 + 0.019*SL
tF 0.115 0.078 + 0.018*SL 0.087 + 0.016*SL 0.086 + 0.016*SL
tPLH 0.412 0.383 + 0.014*SL 0.397 + 0.011*SL 0.416 + 0.009*SL
tPHL 0.401 0.371 + 0.015*SL 0.386 + 0.011*SL 0.406 + 0.009*SL
E to Y tR 0.124 0.083 + 0.020*SL 0.089 + 0.019*SL 0.089 + 0.019*SL
tF 0.115 0.078 + 0.019*SL 0.087 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.451 0.422 + 0.014*SL 0.436 + 0.011*SL 0.455 + 0.009*SL
tPHL 0.435 0.406 + 0.015*SL 0.421 + 0.011*SL 0.441 + 0.009*SL
F to Y tR 0.123 0.082 + 0.021*SL 0.090 + 0.019*SL 0.089 + 0.019*SL
tF 0.116 0.079 + 0.019*SL 0.089 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.469 0.441 + 0.014*SL 0.455 + 0.011*SL 0.474 + 0.009*SL
tPHL 0.460 0.430 + 0.015*SL 0.445 + 0.011*SL 0.465 + 0.009*SL
G to Y tR 0.121 0.080 + 0.020*SL 0.086 + 0.019*SL 0.086 + 0.019*SL
tF 0.121 0.084 + 0.018*SL 0.093 + 0.016*SL 0.094 + 0.016*SL
tPLH 0.376 0.347 + 0.014*SL 0.361 + 0.011*SL 0.380 + 0.009*SL
tPHL 0.405 0.375 + 0.015*SL 0.390 + 0.011*SL 0.412 + 0.009*SL
H to Y tR 0.121 0.080 + 0.020*SL 0.086 + 0.019*SL 0.085 + 0.019*SL
tF 0.120 0.082 + 0.019*SL 0.094 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.387 0.359 + 0.014*SL 0.373 + 0.011*SL 0.391 + 0.009*SL
tPHL 0.436 0.406 + 0.015*SL 0.421 + 0.011*SL 0.443 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-67 STDM110
NR8/NR8D2/NR8D4
8-Input NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NR8D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.127 0.105 + 0.011*SL 0.109 + 0.010*SL 0.120 + 0.009*SL
tF 0.113 0.091 + 0.011*SL 0.099 + 0.009*SL 0.111 + 0.008*SL
tPLH 0.480 0.463 + 0.009*SL 0.472 + 0.006*SL 0.501 + 0.005*SL
tPHL 0.433 0.415 + 0.009*SL 0.424 + 0.007*SL 0.454 + 0.005*SL
B to Y tR 0.127 0.105 + 0.011*SL 0.109 + 0.010*SL 0.120 + 0.009*SL
tF 0.113 0.092 + 0.010*SL 0.099 + 0.009*SL 0.112 + 0.008*SL
tPLH 0.520 0.502 + 0.009*SL 0.512 + 0.006*SL 0.541 + 0.005*SL
tPHL 0.466 0.448 + 0.009*SL 0.458 + 0.007*SL 0.488 + 0.005*SL
C to Y tR 0.127 0.105 + 0.011*SL 0.109 + 0.010*SL 0.120 + 0.009*SL
tF 0.114 0.092 + 0.011*SL 0.101 + 0.009*SL 0.112 + 0.008*SL
tPLH 0.538 0.520 + 0.009*SL 0.530 + 0.006*SL 0.558 + 0.005*SL
tPHL 0.491 0.473 + 0.009*SL 0.483 + 0.007*SL 0.512 + 0.005*SL
D to Y tR 0.126 0.104 + 0.011*SL 0.109 + 0.010*SL 0.121 + 0.009*SL
tF 0.120 0.100 + 0.010*SL 0.105 + 0.009*SL 0.118 + 0.008*SL
tPLH 0.471 0.453 + 0.009*SL 0.463 + 0.007*SL 0.492 + 0.005*SL
tPHL 0.446 0.428 + 0.009*SL 0.438 + 0.007*SL 0.469 + 0.005*SL
E to Y tR 0.126 0.105 + 0.011*SL 0.108 + 0.010*SL 0.120 + 0.009*SL
tF 0.121 0.101 + 0.010*SL 0.106 + 0.009*SL 0.118 + 0.008*SL
tPLH 0.510 0.492 + 0.009*SL 0.502 + 0.007*SL 0.531 + 0.005*SL
tPHL 0.481 0.462 + 0.009*SL 0.473 + 0.007*SL 0.504 + 0.005*SL
F to Y tR 0.126 0.102 + 0.012*SL 0.110 + 0.010*SL 0.121 + 0.009*SL
tF 0.121 0.101 + 0.010*SL 0.107 + 0.009*SL 0.119 + 0.008*SL
tPLH 0.528 0.511 + 0.009*SL 0.520 + 0.007*SL 0.550 + 0.005*SL
tPHL 0.506 0.488 + 0.009*SL 0.498 + 0.007*SL 0.529 + 0.005*SL
G to Y tR 0.123 0.100 + 0.012*SL 0.107 + 0.010*SL 0.119 + 0.009*SL
tF 0.125 0.102 + 0.011*SL 0.113 + 0.009*SL 0.125 + 0.008*SL
tPLH 0.436 0.418 + 0.009*SL 0.428 + 0.007*SL 0.457 + 0.005*SL
tPHL 0.453 0.434 + 0.009*SL 0.445 + 0.007*SL 0.478 + 0.005*SL
H to Y tR 0.124 0.102 + 0.011*SL 0.107 + 0.010*SL 0.119 + 0.009*SL
tF 0.126 0.107 + 0.010*SL 0.111 + 0.009*SL 0.124 + 0.008*SL
tPLH 0.447 0.429 + 0.009*SL 0.439 + 0.007*SL 0.468 + 0.005*SL
tPHL 0.484 0.465 + 0.010*SL 0.476 + 0.007*SL 0.509 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-68 Samsung ASIC
OR2DH/OR2/OR2D2/OR2D4
2-Input OR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR2DH
OR2
Input Load (SL) Gate Count
OR2DH OR2 OR2D2 OR2D4 OR2DH OR2 OR2D2 OR2D4
ABABABAB
0.5 0.6 0.8 0.8 0.8 0.8 1.0 1.0 1.33 1.33 1.67 2.33
Y
A
B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.243 0.079 + 0.082*SL 0.069 + 0.084*SL 0.065 + 0.085*SL
tF 0.223 0.098 + 0.063*SL 0.099 + 0.062*SL 0.090 + 0.064*SL
tPLH 0.240 0.164 + 0.038*SL 0.166 + 0.038*SL 0.167 + 0.038*SL
tPHL 0.324 0.244 + 0.040*SL 0.265 + 0.035*SL 0.275 + 0.033*SL
B to Y tR 0.244 0.081 + 0.082*SL 0.071 + 0.084*SL 0.066 + 0.085*SL
tF 0.223 0.098 + 0.063*SL 0.099 + 0.062*SL 0.090 + 0.064*SL
tPLH 0.264 0.187 + 0.039*SL 0.190 + 0.038*SL 0.191 + 0.038*SL
tPHL 0.339 0.259 + 0.040*SL 0.280 + 0.035*SL 0.289 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.144 0.071 + 0.037*SL 0.064 + 0.038*SL 0.057 + 0.039*SL
tF 0.152 0.084 + 0.034*SL 0.091 + 0.032*SL 0.088 + 0.033*SL
tPLH 0.193 0.155 + 0.019*SL 0.160 + 0.018*SL 0.161 + 0.017*SL
tPHL 0.268 0.222 + 0.023*SL 0.237 + 0.020*SL 0.248 + 0.018*SL
B to Y tR 0.145 0.072 + 0.036*SL 0.064 + 0.038*SL 0.060 + 0.039*SL
tF 0.153 0.086 + 0.033*SL 0.090 + 0.032*SL 0.088 + 0.033*SL
tPLH 0.216 0.178 + 0.019*SL 0.183 + 0.018*SL 0.185 + 0.017*SL
tPHL 0.279 0.233 + 0.023*SL 0.248 + 0.020*SL 0.259 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABY
000
011
101
111
Samsung ASIC 3-69 STDM110
OR2DH/OR2/OR2D2/OR2D4
2-Input OR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR2D2
OR2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.102 0.066 + 0.018*SL 0.063 + 0.019*SL 0.056 + 0.019*SL
tF 0.125 0.086 + 0.019*SL 0.095 + 0.017*SL 0.103 + 0.016*SL
tPLH 0.197 0.174 + 0.011*SL 0.182 + 0.009*SL 0.189 + 0.009*SL
tPHL 0.287 0.256 + 0.016*SL 0.271 + 0.012*SL 0.295 + 0.010*SL
B to Y tR 0.103 0.066 + 0.019*SL 0.066 + 0.019*SL 0.058 + 0.019*SL
tF 0.124 0.084 + 0.020*SL 0.096 + 0.017*SL 0.103 + 0.016*SL
tPLH 0.217 0.193 + 0.012*SL 0.203 + 0.009*SL 0.211 + 0.009*SL
tPHL 0.299 0.268 + 0.016*SL 0.283 + 0.012*SL 0.307 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.091 0.070 + 0.010*SL 0.074 + 0.009*SL 0.069 + 0.010*SL
tF 0.124 0.104 + 0.010*SL 0.109 + 0.009*SL 0.126 + 0.008*SL
tPLH 0.213 0.199 + 0.007*SL 0.206 + 0.005*SL 0.221 + 0.004*SL
tPHL 0.321 0.302 + 0.009*SL 0.313 + 0.007*SL 0.345 + 0.005*SL
B to Y tR 0.095 0.075 + 0.010*SL 0.079 + 0.009*SL 0.072 + 0.010*SL
tF 0.123 0.100 + 0.012*SL 0.110 + 0.009*SL 0.126 + 0.008*SL
tPLH 0.233 0.218 + 0.007*SL 0.226 + 0.005*SL 0.242 + 0.004*SL
tPHL 0.333 0.314 + 0.009*SL 0.324 + 0.007*SL 0.357 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-70 Samsung ASIC
OR3DH/OR3/OR3D2/OR3D4
3-Input OR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OR3DH OR3 OR3D2 OR3D4
ABCABCABCABC
0.6 0.6 0.7 0.7 0.7 0.8 0.7 0.7 0.8 0.9 0.9 1.0
Gate Count
OR3DH OR3 OR3D2 OR3D4
1.67 1.67 2.00 2.67
Y
A
B
C
Truth Table
ABCY
0000
1xx1
x1x1
xx11
Samsung ASIC 3-71 STDM110
OR3DH/OR3/OR3D2/OR3D4
3-Input OR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR3DH
OR3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.247 0.083 + 0.082*SL 0.074 + 0.084*SL 0.068 + 0.085*SL
tF 0.250 0.119 + 0.065*SL 0.131 + 0.062*SL 0.127 + 0.063*SL
tPLH 0.266 0.188 + 0.039*SL 0.192 + 0.038*SL 0.193 + 0.038*SL
tPHL 0.369 0.280 + 0.045*SL 0.310 + 0.037*SL 0.331 + 0.034*SL
B to Y tR 0.249 0.086 + 0.081*SL 0.076 + 0.084*SL 0.070 + 0.085*SL
tF 0.250 0.121 + 0.065*SL 0.132 + 0.062*SL 0.127 + 0.063*SL
tPLH 0.292 0.214 + 0.039*SL 0.219 + 0.038*SL 0.220 + 0.038*SL
tPHL 0.411 0.322 + 0.045*SL 0.353 + 0.037*SL 0.373 + 0.034*SL
C to Y tR 0.255 0.091 + 0.082*SL 0.083 + 0.084*SL 0.077 + 0.084*SL
tF 0.250 0.120 + 0.065*SL 0.132 + 0.062*SL 0.127 + 0.063*SL
tPLH 0.310 0.230 + 0.040*SL 0.238 + 0.038*SL 0.241 + 0.038*SL
tPHL 0.433 0.344 + 0.045*SL 0.375 + 0.037*SL 0.396 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.150 0.077 + 0.037*SL 0.071 + 0.038*SL 0.065 + 0.039*SL
tF 0.186 0.112 + 0.037*SL 0.125 + 0.034*SL 0.133 + 0.033*SL
tPLH 0.226 0.186 + 0.020*SL 0.194 + 0.018*SL 0.196 + 0.018*SL
tPHL 0.338 0.283 + 0.028*SL 0.304 + 0.023*SL 0.324 + 0.020*SL
B to Y tR 0.153 0.079 + 0.037*SL 0.076 + 0.038*SL 0.068 + 0.039*SL
tF 0.187 0.113 + 0.037*SL 0.126 + 0.034*SL 0.134 + 0.033*SL
tPLH 0.251 0.211 + 0.020*SL 0.220 + 0.018*SL 0.223 + 0.018*SL
tPHL 0.379 0.324 + 0.028*SL 0.345 + 0.023*SL 0.366 + 0.020*SL
C to Y tR 0.159 0.086 + 0.037*SL 0.082 + 0.038*SL 0.075 + 0.039*SL
tF 0.187 0.113 + 0.037*SL 0.126 + 0.034*SL 0.133 + 0.033*SL
tPLH 0.268 0.227 + 0.021*SL 0.236 + 0.018*SL 0.241 + 0.018*SL
tPHL 0.400 0.345 + 0.028*SL 0.366 + 0.023*SL 0.387 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-72 Samsung ASIC
OR3DH/OR3/OR3D2/OR3D4
3-Input OR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR3D2
OR3D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.112 0.074 + 0.019*SL 0.078 + 0.018*SL 0.068 + 0.019*SL
tF 0.165 0.122 + 0.022*SL 0.135 + 0.018*SL 0.155 + 0.017*SL
tPLH 0.232 0.208 + 0.012*SL 0.219 + 0.010*SL 0.230 + 0.009*SL
tPHL 0.379 0.343 + 0.018*SL 0.359 + 0.014*SL 0.393 + 0.011*SL
B to Y tR 0.115 0.078 + 0.019*SL 0.081 + 0.018*SL 0.073 + 0.019*SL
tF 0.165 0.122 + 0.022*SL 0.135 + 0.018*SL 0.155 + 0.017*SL
tPLH 0.257 0.232 + 0.013*SL 0.243 + 0.010*SL 0.255 + 0.009*SL
tPHL 0.421 0.385 + 0.018*SL 0.402 + 0.014*SL 0.435 + 0.011*SL
C to Y tR 0.121 0.084 + 0.019*SL 0.087 + 0.018*SL 0.080 + 0.019*SL
tF 0.165 0.122 + 0.022*SL 0.135 + 0.018*SL 0.155 + 0.017*SL
tPLH 0.273 0.247 + 0.013*SL 0.260 + 0.010*SL 0.273 + 0.009*SL
tPHL 0.442 0.407 + 0.018*SL 0.423 + 0.014*SL 0.457 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.082 + 0.011*SL 0.089 + 0.009*SL 0.085 + 0.009*SL
tF 0.172 0.150 + 0.011*SL 0.155 + 0.010*SL 0.182 + 0.008*SL
tPLH 0.253 0.238 + 0.008*SL 0.246 + 0.006*SL 0.266 + 0.004*SL
tPHL 0.430 0.408 + 0.011*SL 0.420 + 0.008*SL 0.458 + 0.006*SL
B to Y tR 0.109 0.088 + 0.010*SL 0.094 + 0.009*SL 0.091 + 0.009*SL
tF 0.172 0.149 + 0.011*SL 0.155 + 0.010*SL 0.182 + 0.008*SL
tPLH 0.277 0.262 + 0.008*SL 0.271 + 0.006*SL 0.291 + 0.004*SL
tPHL 0.471 0.450 + 0.011*SL 0.461 + 0.008*SL 0.500 + 0.006*SL
C to Y tR 0.115 0.095 + 0.010*SL 0.099 + 0.009*SL 0.097 + 0.009*SL
tF 0.172 0.149 + 0.011*SL 0.155 + 0.010*SL 0.182 + 0.008*SL
tPLH 0.295 0.279 + 0.008*SL 0.288 + 0.006*SL 0.310 + 0.005*SL
tPHL 0.491 0.470 + 0.011*SL 0.481 + 0.008*SL 0.520 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-73 STDM110
OR4DH/OR4/OR4D2/OR4D4
4-Input OR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OR4DH OR4 OR4D2 OR4D4
ABCDABCDABCDABCD
0.5 0.6 0.6 0.6 0.9 1.0 1.0 1.0 0.9 1.0 0.9 1.0 0.9 1.0 1.0 1.0
Gate Count
OR4DH OR4 OR4D2 OR4D4
2.67 2.67 3.00 4.33
Y
A
B
C
D
Truth Table
ABCDY
00000
1xxx1
x1xx1
xx1x1
xxx11
STDM110 3-74 Samsung ASIC
OR4DH/OR4/OR4D2/OR4D4
4-Input OR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR4DH
OR4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.254 0.089 + 0.083*SL 0.082 + 0.084*SL 0.078 + 0.085*SL
tF 0.293 0.125 + 0.084*SL 0.124 + 0.084*SL 0.115 + 0.085*SL
tPLH 0.253 0.176 + 0.038*SL 0.179 + 0.038*SL 0.180 + 0.038*SL
tPHL 0.356 0.262 + 0.047*SL 0.278 + 0.043*SL 0.284 + 0.042*SL
B to Y tR 0.256 0.090 + 0.083*SL 0.084 + 0.084*SL 0.080 + 0.085*SL
tF 0.293 0.126 + 0.084*SL 0.123 + 0.084*SL 0.115 + 0.085*SL
tPLH 0.275 0.197 + 0.039*SL 0.201 + 0.038*SL 0.202 + 0.038*SL
tPHL 0.369 0.275 + 0.047*SL 0.292 + 0.043*SL 0.298 + 0.042*SL
C to Y tR 0.274 0.109 + 0.083*SL 0.102 + 0.084*SL 0.097 + 0.085*SL
tF 0.283 0.114 + 0.084*SL 0.111 + 0.085*SL 0.106 + 0.086*SL
tPLH 0.264 0.188 + 0.038*SL 0.190 + 0.038*SL 0.191 + 0.038*SL
tPHL 0.352 0.260 + 0.046*SL 0.273 + 0.043*SL 0.279 + 0.042*SL
D to Y tR 0.275 0.110 + 0.083*SL 0.103 + 0.084*SL 0.099 + 0.085*SL
tF 0.283 0.114 + 0.084*SL 0.111 + 0.085*SL 0.106 + 0.086*SL
tPLH 0.287 0.210 + 0.038*SL 0.213 + 0.038*SL 0.214 + 0.038*SL
tPHL 0.366 0.274 + 0.046*SL 0.287 + 0.043*SL 0.292 + 0.042*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.154 0.083 + 0.036*SL 0.076 + 0.037*SL 0.071 + 0.038*SL
tF 0.188 0.105 + 0.042*SL 0.107 + 0.041*SL 0.102 + 0.042*SL
tPLH 0.214 0.176 + 0.019*SL 0.181 + 0.017*SL 0.183 + 0.017*SL
tPHL 0.264 0.215 + 0.024*SL 0.226 + 0.022*SL 0.233 + 0.021*SL
B to Y tR 0.156 0.083 + 0.037*SL 0.080 + 0.037*SL 0.075 + 0.038*SL
tF 0.188 0.105 + 0.041*SL 0.106 + 0.041*SL 0.103 + 0.042*SL
tPLH 0.241 0.203 + 0.019*SL 0.208 + 0.017*SL 0.210 + 0.017*SL
tPHL 0.275 0.225 + 0.025*SL 0.236 + 0.022*SL 0.243 + 0.021*SL
C to Y tR 0.171 0.099 + 0.036*SL 0.094 + 0.037*SL 0.089 + 0.038*SL
tF 0.181 0.098 + 0.041*SL 0.098 + 0.042*SL 0.095 + 0.042*SL
tPLH 0.224 0.188 + 0.018*SL 0.191 + 0.017*SL 0.192 + 0.017*SL
tPHL 0.264 0.217 + 0.024*SL 0.225 + 0.022*SL 0.231 + 0.021*SL
D to Y tR 0.174 0.101 + 0.036*SL 0.097 + 0.037*SL 0.092 + 0.038*SL
tF 0.181 0.098 + 0.041*SL 0.097 + 0.042*SL 0.094 + 0.042*SL
tPLH 0.252 0.215 + 0.018*SL 0.219 + 0.017*SL 0.221 + 0.017*SL
tPHL 0.275 0.227 + 0.024*SL 0.235 + 0.022*SL 0.241 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-75 STDM110
OR4DH/OR4/OR4D2/OR4D4
4-Input OR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR4D2
OR4D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.120 0.082 + 0.019*SL 0.083 + 0.018*SL 0.075 + 0.019*SL
tF 0.150 0.106 + 0.022*SL 0.111 + 0.021*SL 0.114 + 0.021*SL
tPLH 0.226 0.204 + 0.011*SL 0.211 + 0.009*SL 0.217 + 0.009*SL
tPHL 0.281 0.252 + 0.015*SL 0.262 + 0.012*SL 0.278 + 0.011*SL
B to Y tR 0.125 0.090 + 0.018*SL 0.087 + 0.018*SL 0.079 + 0.019*SL
tF 0.151 0.106 + 0.022*SL 0.113 + 0.021*SL 0.113 + 0.021*SL
tPLH 0.251 0.228 + 0.011*SL 0.235 + 0.009*SL 0.243 + 0.009*SL
tPHL 0.292 0.262 + 0.015*SL 0.273 + 0.012*SL 0.289 + 0.011*SL
C to Y tR 0.141 0.105 + 0.018*SL 0.104 + 0.018*SL 0.095 + 0.019*SL
tF 0.144 0.100 + 0.022*SL 0.105 + 0.021*SL 0.105 + 0.021*SL
tPLH 0.244 0.223 + 0.011*SL 0.228 + 0.009*SL 0.233 + 0.009*SL
tPHL 0.290 0.262 + 0.014*SL 0.270 + 0.012*SL 0.283 + 0.011*SL
D to Y tR 0.144 0.108 + 0.018*SL 0.107 + 0.018*SL 0.099 + 0.019*SL
tF 0.146 0.103 + 0.021*SL 0.105 + 0.021*SL 0.105 + 0.021*SL
tPLH 0.270 0.248 + 0.011*SL 0.254 + 0.009*SL 0.259 + 0.009*SL
tPHL 0.301 0.272 + 0.014*SL 0.281 + 0.012*SL 0.294 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.093 0.075 + 0.009*SL 0.074 + 0.009*SL 0.069 + 0.009*SL
tF 0.086 0.067 + 0.009*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.405 0.390 + 0.007*SL 0.398 + 0.005*SL 0.413 + 0.004*SL
tPHL 0.428 0.412 + 0.008*SL 0.421 + 0.006*SL 0.440 + 0.005*SL
B to Y tR 0.093 0.072 + 0.010*SL 0.077 + 0.009*SL 0.069 + 0.010*SL
tF 0.083 0.062 + 0.010*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.431 0.417 + 0.007*SL 0.425 + 0.005*SL 0.440 + 0.004*SL
tPHL 0.438 0.423 + 0.008*SL 0.431 + 0.006*SL 0.450 + 0.005*SL
C to Y tR 0.093 0.073 + 0.010*SL 0.078 + 0.009*SL 0.070 + 0.009*SL
tF 0.083 0.062 + 0.010*SL 0.070 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.413 0.399 + 0.007*SL 0.407 + 0.005*SL 0.422 + 0.004*SL
tPHL 0.414 0.399 + 0.008*SL 0.407 + 0.006*SL 0.426 + 0.005*SL
D to Y tR 0.093 0.072 + 0.010*SL 0.078 + 0.009*SL 0.069 + 0.009*SL
tF 0.085 0.067 + 0.009*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.442 0.428 + 0.007*SL 0.435 + 0.005*SL 0.450 + 0.004*SL
tPHL 0.425 0.409 + 0.008*SL 0.418 + 0.006*SL 0.437 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-76 Samsung ASIC
OR5/OR5D2/OR5D4
5-Input OR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OR5 OR5D2 OR5D4 OR5 OR5D2 OR5D4
ABCDEABCDEABCDE
0.9 0.9 0.9 1.0 1.0 0.8 0.9 0.9 0.9 1.0 0.9 0.9 1.0 1.0 1.1 3.00 3.33 4.67
Y
B
C
D
E
A
Truth Table
ABCDEY
000000
1xxxx1
x1xxx1
xx1xx1
xxx1x1
xxxx11
Samsung ASIC 3-77 STDM110
OR5/OR5D2/OR5D4
5-Input OR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR5
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.161 0.088 + 0.036*SL 0.085 + 0.037*SL 0.079 + 0.038*SL
tF 0.213 0.126 + 0.044*SL 0.135 + 0.042*SL 0.138 + 0.041*SL
tPLH 0.248 0.209 + 0.019*SL 0.216 + 0.018*SL 0.219 + 0.017*SL
tPHL 0.322 0.266 + 0.028*SL 0.282 + 0.024*SL 0.298 + 0.022*SL
B to Y tR 0.166 0.094 + 0.036*SL 0.090 + 0.037*SL 0.083 + 0.038*SL
tF 0.214 0.127 + 0.044*SL 0.136 + 0.042*SL 0.138 + 0.041*SL
tPLH 0.281 0.241 + 0.020*SL 0.249 + 0.018*SL 0.253 + 0.017*SL
tPHL 0.362 0.306 + 0.028*SL 0.322 + 0.024*SL 0.338 + 0.022*SL
C to Y tR 0.173 0.100 + 0.036*SL 0.098 + 0.037*SL 0.091 + 0.038*SL
tF 0.214 0.127 + 0.044*SL 0.135 + 0.042*SL 0.138 + 0.041*SL
tPLH 0.302 0.261 + 0.020*SL 0.271 + 0.018*SL 0.276 + 0.017*SL
tPHL 0.381 0.325 + 0.028*SL 0.341 + 0.024*SL 0.357 + 0.022*SL
D to Y tR 0.171 0.098 + 0.036*SL 0.094 + 0.037*SL 0.089 + 0.038*SL
tF 0.182 0.098 + 0.042*SL 0.098 + 0.042*SL 0.096 + 0.042*SL
tPLH 0.224 0.188 + 0.018*SL 0.191 + 0.017*SL 0.193 + 0.017*SL
tPHL 0.265 0.217 + 0.024*SL 0.225 + 0.022*SL 0.232 + 0.021*SL
E to Y tR 0.174 0.101 + 0.036*SL 0.097 + 0.037*SL 0.092 + 0.038*SL
tF 0.182 0.098 + 0.042*SL 0.098 + 0.042*SL 0.097 + 0.042*SL
tPLH 0.252 0.216 + 0.018*SL 0.219 + 0.017*SL 0.221 + 0.017*SL
tPHL 0.276 0.228 + 0.024*SL 0.236 + 0.022*SL 0.242 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-78 Samsung ASIC
OR5/OR5D2/OR5D4
5-Input OR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.132 0.095 + 0.019*SL 0.096 + 0.018*SL 0.089 + 0.019*SL
tF 0.182 0.134 + 0.024*SL 0.143 + 0.022*SL 0.155 + 0.021*SL
tPLH 0.266 0.242 + 0.012*SL 0.251 + 0.010*SL 0.261 + 0.009*SL
tPHL 0.352 0.318 + 0.017*SL 0.330 + 0.014*SL 0.356 + 0.012*SL
B to Y tR 0.139 0.103 + 0.018*SL 0.101 + 0.018*SL 0.094 + 0.019*SL
tF 0.182 0.135 + 0.024*SL 0.144 + 0.022*SL 0.155 + 0.021*SL
tPLH 0.298 0.273 + 0.012*SL 0.283 + 0.010*SL 0.294 + 0.009*SL
tPHL 0.393 0.359 + 0.017*SL 0.371 + 0.014*SL 0.397 + 0.012*SL
C to Y tR 0.146 0.109 + 0.018*SL 0.109 + 0.018*SL 0.103 + 0.019*SL
tF 0.182 0.135 + 0.024*SL 0.143 + 0.022*SL 0.155 + 0.021*SL
tPLH 0.320 0.295 + 0.013*SL 0.305 + 0.010*SL 0.318 + 0.009*SL
tPHL 0.411 0.378 + 0.017*SL 0.390 + 0.014*SL 0.415 + 0.012*SL
D to Y tR 0.140 0.104 + 0.018*SL 0.104 + 0.018*SL 0.096 + 0.019*SL
tF 0.145 0.100 + 0.022*SL 0.105 + 0.021*SL 0.107 + 0.021*SL
tPLH 0.244 0.224 + 0.010*SL 0.229 + 0.009*SL 0.234 + 0.009*SL
tPHL 0.289 0.261 + 0.014*SL 0.269 + 0.012*SL 0.282 + 0.011*SL
E to Y tR 0.144 0.108 + 0.018*SL 0.108 + 0.018*SL 0.100 + 0.019*SL
tF 0.146 0.103 + 0.022*SL 0.105 + 0.021*SL 0.106 + 0.021*SL
tPLH 0.270 0.249 + 0.011*SL 0.254 + 0.009*SL 0.260 + 0.009*SL
tPHL 0.299 0.271 + 0.014*SL 0.279 + 0.012*SL 0.292 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-79 STDM110
OR5/OR5D2/OR5D4
5-Input OR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OR5D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.093 0.073 + 0.010*SL 0.077 + 0.009*SL 0.070 + 0.009*SL
tF 0.083 0.062 + 0.010*SL 0.070 + 0.008*SL 0.070 + 0.008*SL
tPLH 0.434 0.420 + 0.007*SL 0.428 + 0.005*SL 0.443 + 0.004*SL
tPHL 0.483 0.467 + 0.008*SL 0.476 + 0.006*SL 0.495 + 0.005*SL
B to Y tR 0.094 0.073 + 0.010*SL 0.078 + 0.009*SL 0.070 + 0.009*SL
tF 0.083 0.063 + 0.010*SL 0.071 + 0.008*SL 0.070 + 0.008*SL
tPLH 0.461 0.447 + 0.007*SL 0.454 + 0.005*SL 0.470 + 0.004*SL
tPHL 0.522 0.506 + 0.008*SL 0.515 + 0.006*SL 0.533 + 0.005*SL
C to Y tR 0.093 0.073 + 0.010*SL 0.077 + 0.009*SL 0.070 + 0.009*SL
tF 0.084 0.064 + 0.010*SL 0.071 + 0.008*SL 0.070 + 0.008*SL
tPLH 0.479 0.464 + 0.007*SL 0.472 + 0.005*SL 0.487 + 0.004*SL
tPHL 0.540 0.525 + 0.008*SL 0.533 + 0.006*SL 0.552 + 0.005*SL
D to Y tR 0.094 0.077 + 0.009*SL 0.075 + 0.009*SL 0.070 + 0.009*SL
tF 0.083 0.063 + 0.010*SL 0.070 + 0.008*SL 0.070 + 0.008*SL
tPLH 0.417 0.403 + 0.007*SL 0.410 + 0.005*SL 0.426 + 0.004*SL
tPHL 0.411 0.396 + 0.008*SL 0.404 + 0.006*SL 0.422 + 0.005*SL
E to Y tR 0.094 0.076 + 0.009*SL 0.075 + 0.009*SL 0.070 + 0.009*SL
tF 0.085 0.066 + 0.009*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.442 0.428 + 0.007*SL 0.436 + 0.005*SL 0.451 + 0.004*SL
tPHL 0.420 0.405 + 0.008*SL 0.414 + 0.006*SL 0.432 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-80 Samsung ASIC
XN2/XN2D2/XN2D4
2-Input Exclusive-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XN2
Input Load (SL) Gate Count
XN2 XN2D2 XN2D4 XN2 XN2D2 XN2D4
ABABAB
0.8 1.5 0.8 1.5 0.8 1.5 2.33 2.67 3.00
Y
A
B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.169 0.096 + 0.037*SL 0.097 + 0.036*SL 0.091 + 0.037*SL
tF 0.171 0.104 + 0.033*SL 0.113 + 0.031*SL 0.115 + 0.031*SL
tPLH 0.367 0.324 + 0.021*SL 0.336 + 0.018*SL 0.344 + 0.017*SL
tPHL 0.396 0.349 + 0.024*SL 0.366 + 0.020*SL 0.380 + 0.018*SL
B to Y tR 0.165 0.090 + 0.037*SL 0.093 + 0.037*SL 0.088 + 0.037*SL
tF 0.164 0.096 + 0.034*SL 0.107 + 0.031*SL 0.110 + 0.031*SL
tPLH 0.331 0.288 + 0.021*SL 0.301 + 0.018*SL 0.308 + 0.017*SL
tPHL 0.311 0.261 + 0.025*SL 0.280 + 0.020*SL 0.297 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABY
001
010
100
111
Samsung ASIC 3-81 STDM110
XN2/XN2D2/XN2D4
2-Input Exclusive-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XN2D2
XN2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.137 0.095 + 0.021*SL 0.104 + 0.019*SL 0.105 + 0.019*SL
tF 0.150 0.108 + 0.021*SL 0.122 + 0.018*SL 0.136 + 0.016*SL
tPLH 0.380 0.351 + 0.014*SL 0.365 + 0.011*SL 0.384 + 0.009*SL
tPHL 0.422 0.389 + 0.016*SL 0.405 + 0.012*SL 0.433 + 0.010*SL
B to Y tR 0.134 0.092 + 0.021*SL 0.100 + 0.019*SL 0.104 + 0.019*SL
tF 0.145 0.103 + 0.021*SL 0.118 + 0.018*SL 0.132 + 0.016*SL
tPLH 0.343 0.315 + 0.014*SL 0.329 + 0.011*SL 0.348 + 0.009*SL
tPHL 0.326 0.291 + 0.017*SL 0.309 + 0.013*SL 0.340 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.155 0.133 + 0.011*SL 0.136 + 0.010*SL 0.155 + 0.009*SL
tF 0.184 0.160 + 0.012*SL 0.168 + 0.010*SL 0.196 + 0.008*SL
tPLH 0.458 0.440 + 0.009*SL 0.450 + 0.007*SL 0.481 + 0.005*SL
tPHL 0.523 0.502 + 0.010*SL 0.514 + 0.007*SL 0.551 + 0.005*SL
B to Y tR 0.155 0.132 + 0.011*SL 0.137 + 0.010*SL 0.154 + 0.009*SL
tF 0.182 0.158 + 0.012*SL 0.167 + 0.010*SL 0.195 + 0.008*SL
tPLH 0.416 0.398 + 0.009*SL 0.408 + 0.007*SL 0.439 + 0.005*SL
tPHL 0.415 0.392 + 0.011*SL 0.405 + 0.008*SL 0.447 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-82 Samsung ASIC
XN3/XN3D2/XN3D4
3-Input Exclusive-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XN3
Input Load (SL) Gate Count
XN3 XN3D2 XN3D
4
XN3 XN3D2 XN3D4
ABCABCABC
1.4 0.8 1.5 1.4 0.8 1.5 1.3 0.8 1.5 4.00 4.33 4.67
Y
A
B
C
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.198 0.115 + 0.042*SL 0.130 + 0.038*SL 0.137 + 0.037*SL
tF 0.184 0.107 + 0.039*SL 0.125 + 0.034*SL 0.140 + 0.032*SL
tPLH 0.341 0.288 + 0.027*SL 0.307 + 0.022*SL 0.327 + 0.019*SL
tPHL 0.345 0.297 + 0.024*SL 0.314 + 0.020*SL 0.328 + 0.018*SL
B to Y tR 0.217 0.137 + 0.040*SL 0.149 + 0.037*SL 0.154 + 0.037*SL
tF 0.232 0.158 + 0.037*SL 0.177 + 0.032*SL 0.187 + 0.031*SL
tPLH 0.600 0.557 + 0.022*SL 0.570 + 0.019*SL 0.579 + 0.017*SL
tPHL 0.627 0.565 + 0.031*SL 0.591 + 0.024*SL 0.619 + 0.021*SL
C to Y tR 0.216 0.136 + 0.040*SL 0.148 + 0.037*SL 0.154 + 0.037*SL
tF 0.160 0.095 + 0.033*SL 0.103 + 0.031*SL 0.101 + 0.031*SL
tPLH 0.521 0.469 + 0.026*SL 0.488 + 0.021*SL 0.506 + 0.019*SL
tPHL 0.574 0.526 + 0.024*SL 0.544 + 0.020*SL 0.558 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
0001
0010
0100
0111
1000
1011
1101
1110
Samsung ASIC 3-83 STDM110
XN3/XN3D2/XN3D4
3-Input Exclusive-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XN3D2
XN3D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.178 0.132 + 0.023*SL 0.142 + 0.020*SL 0.161 + 0.019*SL
tF 0.178 0.133 + 0.022*SL 0.146 + 0.019*SL 0.175 + 0.017*SL
tPLH 0.367 0.332 + 0.018*SL 0.349 + 0.013*SL 0.381 + 0.011*SL
tPHL 0.371 0.339 + 0.016*SL 0.354 + 0.012*SL 0.381 + 0.010*SL
B to Y tR 0.191 0.146 + 0.022*SL 0.156 + 0.020*SL 0.173 + 0.019*SL
tF 0.216 0.173 + 0.022*SL 0.187 + 0.018*SL 0.211 + 0.016*SL
tPLH 0.619 0.591 + 0.014*SL 0.605 + 0.011*SL 0.625 + 0.009*SL
tPHL 0.664 0.624 + 0.020*SL 0.645 + 0.015*SL 0.685 + 0.012*SL
C to Y tR 0.190 0.146 + 0.022*SL 0.155 + 0.020*SL 0.173 + 0.019*SL
tF 0.140 0.102 + 0.019*SL 0.113 + 0.016*SL 0.122 + 0.015*SL
tPLH 0.548 0.514 + 0.017*SL 0.530 + 0.013*SL 0.560 + 0.010*SL
tPHL 0.603 0.572 + 0.016*SL 0.587 + 0.012*SL 0.614 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.217 0.194 + 0.011*SL 0.196 + 0.011*SL 0.220 + 0.010*SL
tF 0.273 0.246 + 0.013*SL 0.256 + 0.011*SL 0.289 + 0.009*SL
tPLH 0.469 0.446 + 0.012*SL 0.459 + 0.008*SL 0.501 + 0.006*SL
tPHL 0.497 0.469 + 0.014*SL 0.485 + 0.010*SL 0.538 + 0.007*SL
B to Y tR 0.145 0.123 + 0.011*SL 0.128 + 0.010*SL 0.140 + 0.009*SL
tF 0.259 0.234 + 0.013*SL 0.243 + 0.010*SL 0.273 + 0.009*SL
tPLH 0.691 0.673 + 0.009*SL 0.683 + 0.007*SL 0.714 + 0.005*SL
tPHL 0.786 0.760 + 0.013*SL 0.775 + 0.009*SL 0.824 + 0.007*SL
C to Y tR 0.200 0.177 + 0.011*SL 0.179 + 0.011*SL 0.203 + 0.010*SL
tF 0.292 0.266 + 0.013*SL 0.276 + 0.011*SL 0.308 + 0.009*SL
tPLH 0.640 0.618 + 0.011*SL 0.631 + 0.008*SL 0.669 + 0.006*SL
tPHL 0.693 0.665 + 0.014*SL 0.681 + 0.010*SL 0.734 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-84 Samsung ASIC
XO2/XO2D2/XO2D4
2-Input Exclusive-OR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
XO2 XO2D2 XO2D4 XO2 XO2D2 XO2D4
ABABAB
0.8 1.3 0.8 1.3 0.8 1.3 2.33 2.67 3.00
Y
A
B
Truth Table
ABY
000
011
101
110
Samsung ASIC 3-85 STDM110
XO2/XO2D2/XO2D4
2-Input Exclusive-OR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XO2
XO2D2
XO2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.176 0.101 + 0.037*SL 0.102 + 0.037*SL 0.097 + 0.038*SL
tF 0.180 0.110 + 0.035*SL 0.119 + 0.033*SL 0.122 + 0.032*SL
tPLH 0.376 0.332 + 0.022*SL 0.345 + 0.019*SL 0.353 + 0.018*SL
tPHL 0.418 0.368 + 0.025*SL 0.386 + 0.021*SL 0.401 + 0.019*SL
B to Y tR 0.175 0.099 + 0.038*SL 0.101 + 0.037*SL 0.096 + 0.038*SL
tF 0.171 0.099 + 0.036*SL 0.111 + 0.033*SL 0.115 + 0.033*SL
tPLH 0.312 0.266 + 0.023*SL 0.281 + 0.019*SL 0.291 + 0.018*SL
tPHL 0.360 0.311 + 0.025*SL 0.328 + 0.021*SL 0.343 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.142 0.100 + 0.021*SL 0.108 + 0.019*SL 0.112 + 0.019*SL
tF 0.155 0.114 + 0.021*SL 0.125 + 0.018*SL 0.141 + 0.016*SL
tPLH 0.388 0.359 + 0.014*SL 0.373 + 0.011*SL 0.393 + 0.009*SL
tPHL 0.435 0.403 + 0.016*SL 0.418 + 0.012*SL 0.446 + 0.010*SL
B to Y tR 0.141 0.099 + 0.021*SL 0.108 + 0.019*SL 0.110 + 0.019*SL
tF 0.150 0.109 + 0.021*SL 0.120 + 0.018*SL 0.137 + 0.016*SL
tPLH 0.320 0.290 + 0.015*SL 0.305 + 0.011*SL 0.327 + 0.010*SL
tPHL 0.379 0.346 + 0.016*SL 0.362 + 0.012*SL 0.390 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.157 0.135 + 0.011*SL 0.138 + 0.010*SL 0.156 + 0.009*SL
tF 0.182 0.159 + 0.012*SL 0.167 + 0.010*SL 0.195 + 0.008*SL
tPLH 0.457 0.439 + 0.009*SL 0.449 + 0.007*SL 0.480 + 0.005*SL
tPHL 0.528 0.507 + 0.010*SL 0.518 + 0.008*SL 0.556 + 0.006*SL
B to Y tR 0.157 0.135 + 0.011*SL 0.139 + 0.010*SL 0.156 + 0.009*SL
tF 0.182 0.159 + 0.012*SL 0.167 + 0.010*SL 0.194 + 0.008*SL
tPLH 0.383 0.363 + 0.010*SL 0.374 + 0.007*SL 0.408 + 0.005*SL
tPHL 0.470 0.450 + 0.010*SL 0.461 + 0.007*SL 0.499 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-86 Samsung ASIC
XO3/XO3D2/XO3D4
3-Input Exclusive-OR with 1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XO3
Input Load (SL) Gate Count
XO3 XO3D2 XO3D4 XO3 XO3D2 XO3D4
ABCABCABC
1.4 0.8 1.5 1.4 0.8 1.5 1.4 0.8 1.5 4.00 4.33 4.67
Y
A
B
C
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.183 0.102 + 0.040*SL 0.112 + 0.038*SL 0.116 + 0.037*SL
tF 0.210 0.130 + 0.040*SL 0.150 + 0.035*SL 0.171 + 0.032*SL
tPLH 0.324 0.281 + 0.021*SL 0.294 + 0.018*SL 0.301 + 0.017*SL
tPHL 0.354 0.292 + 0.031*SL 0.316 + 0.025*SL 0.344 + 0.021*SL
B to Y tR 0.217 0.136 + 0.040*SL 0.148 + 0.037*SL 0.154 + 0.037*SL
tF 0.232 0.158 + 0.037*SL 0.176 + 0.032*SL 0.186 + 0.031*SL
tPLH 0.600 0.556 + 0.022*SL 0.570 + 0.019*SL 0.578 + 0.017*SL
tPHL 0.627 0.566 + 0.031*SL 0.592 + 0.024*SL 0.620 + 0.021*SL
C to Y tR 0.217 0.136 + 0.040*SL 0.149 + 0.037*SL 0.154 + 0.037*SL
tF 0.161 0.096 + 0.032*SL 0.102 + 0.031*SL 0.101 + 0.031*SL
tPLH 0.517 0.465 + 0.026*SL 0.485 + 0.021*SL 0.503 + 0.019*SL
tPHL 0.571 0.524 + 0.024*SL 0.541 + 0.020*SL 0.555 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
0000
0011
0101
0110
1001
1010
1100
1111
Samsung ASIC 3-87 STDM110
XO3/XO3D2/XO3D4
3-Input Exclusive-OR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
XO3D2
XO3D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.159 0.113 + 0.023*SL 0.124 + 0.020*SL 0.140 + 0.019*SL
tF 0.209 0.163 + 0.023*SL 0.178 + 0.020*SL 0.209 + 0.017*SL
tPLH 0.340 0.312 + 0.014*SL 0.325 + 0.011*SL 0.344 + 0.009*SL
tPHL 0.390 0.348 + 0.021*SL 0.370 + 0.016*SL 0.412 + 0.012*SL
B to Y tR 0.191 0.146 + 0.022*SL 0.156 + 0.020*SL 0.174 + 0.019*SL
tF 0.216 0.174 + 0.021*SL 0.187 + 0.018*SL 0.211 + 0.016*SL
tPLH 0.620 0.592 + 0.014*SL 0.606 + 0.011*SL 0.625 + 0.009*SL
tPHL 0.666 0.626 + 0.020*SL 0.647 + 0.015*SL 0.687 + 0.012*SL
C to Y tR 0.190 0.145 + 0.022*SL 0.154 + 0.020*SL 0.173 + 0.019*SL
tF 0.140 0.102 + 0.019*SL 0.113 + 0.016*SL 0.122 + 0.015*SL
tPLH 0.544 0.510 + 0.017*SL 0.527 + 0.013*SL 0.557 + 0.010*SL
tPHL 0.602 0.570 + 0.016*SL 0.586 + 0.012*SL 0.612 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.214 0.190 + 0.012*SL 0.194 + 0.011*SL 0.218 + 0.010*SL
tF 0.279 0.253 + 0.013*SL 0.263 + 0.011*SL 0.294 + 0.009*SL
tPLH 0.417 0.394 + 0.012*SL 0.407 + 0.008*SL 0.449 + 0.006*SL
tPHL 0.519 0.491 + 0.014*SL 0.507 + 0.010*SL 0.560 + 0.007*SL
B to Y tR 0.145 0.123 + 0.011*SL 0.127 + 0.010*SL 0.139 + 0.009*SL
tF 0.258 0.233 + 0.013*SL 0.243 + 0.010*SL 0.272 + 0.009*SL
tPLH 0.689 0.671 + 0.009*SL 0.681 + 0.007*SL 0.712 + 0.005*SL
tPHL 0.786 0.760 + 0.013*SL 0.775 + 0.009*SL 0.824 + 0.007*SL
C to Y tR 0.199 0.176 + 0.011*SL 0.178 + 0.011*SL 0.202 + 0.010*SL
tF 0.291 0.265 + 0.013*SL 0.275 + 0.010*SL 0.307 + 0.009*SL
tPLH 0.635 0.613 + 0.011*SL 0.625 + 0.008*SL 0.664 + 0.006*SL
tPHL 0.693 0.665 + 0.014*SL 0.682 + 0.010*SL 0.734 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-88 Samsung ASIC
AO21DH/AO21/AO21D2/AO21D2B/AO21D4
2-AND into 2-NOR with 0.5X/1X/2X/2X(Bufferd)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO21DH
Input Load (SL)
AO21DH AO21 AO21D2 AO21D2B AO21D4
ABCABCABCABCABC
0.5 0.5 0.5 0.9 0.9 0.9 1.9 1.8 2.0 0.9 0.9 1.0 0.9 1.0 1.0
Gate Count
AO21DH AO21 AO21D2 AO21D2B AO21D4
1.33 1.33 2.33 2.33 3.00
A
BY
C
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.493 0.185 + 0.154*SL 0.163 + 0.159*SL 0.157 + 0.160*SL
tF 0.326 0.126 + 0.100*SL 0.108 + 0.105*SL 0.092 + 0.107*SL
tPLH 0.266 0.122 + 0.072*SL 0.122 + 0.072*SL 0.123 + 0.072*SL
tPHL 0.215 0.110 + 0.052*SL 0.112 + 0.052*SL 0.113 + 0.052*SL
B to Y tR 0.523 0.213 + 0.155*SL 0.192 + 0.160*SL 0.188 + 0.161*SL
tF 0.320 0.115 + 0.102*SL 0.103 + 0.105*SL 0.093 + 0.107*SL
tPLH 0.287 0.143 + 0.072*SL 0.143 + 0.072*SL 0.144 + 0.072*SL
tPHL 0.210 0.105 + 0.053*SL 0.108 + 0.052*SL 0.109 + 0.052*SL
C to Y tR 0.518 0.203 + 0.157*SL 0.193 + 0.160*SL 0.190 + 0.160*SL
tF 0.260 0.142 + 0.059*SL 0.128 + 0.063*SL 0.112 + 0.065*SL
tPLH 0.330 0.185 + 0.073*SL 0.187 + 0.072*SL 0.188 + 0.072*SL
tPHL 0.202 0.133 + 0.034*SL 0.136 + 0.034*SL 0.138 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
0x01
x001
Other States 0
Samsung ASIC 3-89 STDM110
AO21DH/AO21/AO21D2/AO21D2B/AO21D4
2-AND into 2-NOR with 0.5X/1X/2X/2X(Bufferd)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO21
AO21D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.314 0.169 + 0.073*SL 0.157 + 0.076*SL 0.140 + 0.078*SL
tF 0.251 0.128 + 0.061*SL 0.116 + 0.064*SL 0.101 + 0.066*SL
tPLH 0.176 0.105 + 0.036*SL 0.107 + 0.035*SL 0.107 + 0.035*SL
tPHL 0.177 0.110 + 0.034*SL 0.114 + 0.033*SL 0.115 + 0.033*SL
B to Y tR 0.337 0.191 + 0.073*SL 0.178 + 0.076*SL 0.163 + 0.078*SL
tF 0.243 0.117 + 0.063*SL 0.108 + 0.065*SL 0.099 + 0.066*SL
tPLH 0.194 0.123 + 0.035*SL 0.123 + 0.035*SL 0.123 + 0.035*SL
tPHL 0.171 0.103 + 0.034*SL 0.108 + 0.033*SL 0.110 + 0.033*SL
C to Y tR 0.326 0.174 + 0.076*SL 0.167 + 0.078*SL 0.160 + 0.079*SL
tF 0.219 0.146 + 0.036*SL 0.139 + 0.038*SL 0.130 + 0.039*SL
tPLH 0.230 0.158 + 0.036*SL 0.159 + 0.036*SL 0.161 + 0.035*SL
tPHL 0.184 0.140 + 0.022*SL 0.142 + 0.021*SL 0.144 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.241 0.171 + 0.035*SL 0.164 + 0.037*SL 0.147 + 0.038*SL
tF 0.193 0.134 + 0.030*SL 0.126 + 0.032*SL 0.110 + 0.033*SL
tPLH 0.141 0.103 + 0.019*SL 0.110 + 0.017*SL 0.110 + 0.017*SL
tPHL 0.144 0.107 + 0.018*SL 0.115 + 0.016*SL 0.116 + 0.016*SL
B to Y tR 0.264 0.194 + 0.035*SL 0.186 + 0.037*SL 0.169 + 0.039*SL
tF 0.184 0.124 + 0.030*SL 0.115 + 0.032*SL 0.106 + 0.033*SL
tPLH 0.159 0.123 + 0.018*SL 0.126 + 0.017*SL 0.125 + 0.017*SL
tPHL 0.138 0.102 + 0.018*SL 0.109 + 0.016*SL 0.111 + 0.016*SL
C to Y tR 0.250 0.176 + 0.037*SL 0.171 + 0.038*SL 0.162 + 0.039*SL
tF 0.181 0.146 + 0.017*SL 0.141 + 0.019*SL 0.130 + 0.020*SL
tPLH 0.189 0.153 + 0.018*SL 0.155 + 0.018*SL 0.157 + 0.018*SL
tPHL 0.161 0.138 + 0.011*SL 0.141 + 0.011*SL 0.143 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-90 Samsung ASIC
AO21DH/AO21/AO21D2/AO21D2B/AO21D4
2-AND into 2-NOR with 0.5X/1X/2X/2X(Bufferd)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO21D2B
AO21D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.108 0.072 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.099 0.066 + 0.016*SL 0.069 + 0.016*SL 0.067 + 0.016*SL
tPLH 0.329 0.305 + 0.012*SL 0.315 + 0.009*SL 0.323 + 0.009*SL
tPHL 0.339 0.314 + 0.013*SL 0.325 + 0.010*SL 0.338 + 0.009*SL
B to Y tR 0.109 0.073 + 0.018*SL 0.073 + 0.018*SL 0.063 + 0.019*SL
tF 0.097 0.063 + 0.017*SL 0.070 + 0.015*SL 0.067 + 0.016*SL
tPLH 0.349 0.325 + 0.012*SL 0.335 + 0.009*SL 0.343 + 0.009*SL
tPHL 0.333 0.307 + 0.013*SL 0.319 + 0.010*SL 0.332 + 0.009*SL
C to Y tR 0.109 0.072 + 0.018*SL 0.072 + 0.018*SL 0.063 + 0.019*SL
tF 0.097 0.064 + 0.017*SL 0.068 + 0.016*SL 0.066 + 0.016*SL
tPLH 0.387 0.364 + 0.012*SL 0.374 + 0.009*SL 0.382 + 0.009*SL
tPHL 0.351 0.326 + 0.013*SL 0.338 + 0.010*SL 0.351 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.078 + 0.009*SL 0.078 + 0.009*SL 0.072 + 0.009*SL
tF 0.087 0.068 + 0.009*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.356 0.342 + 0.007*SL 0.350 + 0.005*SL 0.365 + 0.004*SL
tPHL 0.353 0.338 + 0.008*SL 0.347 + 0.005*SL 0.365 + 0.004*SL
B to Y tR 0.097 0.078 + 0.009*SL 0.079 + 0.009*SL 0.072 + 0.009*SL
tF 0.084 0.064 + 0.010*SL 0.072 + 0.008*SL 0.072 + 0.008*SL
tPLH 0.376 0.362 + 0.007*SL 0.370 + 0.005*SL 0.385 + 0.004*SL
tPHL 0.347 0.332 + 0.008*SL 0.340 + 0.005*SL 0.359 + 0.004*SL
C to Y tR 0.096 0.077 + 0.010*SL 0.080 + 0.009*SL 0.072 + 0.009*SL
tF 0.083 0.064 + 0.010*SL 0.071 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.413 0.399 + 0.007*SL 0.406 + 0.005*SL 0.422 + 0.004*SL
tPHL 0.357 0.342 + 0.007*SL 0.351 + 0.005*SL 0.369 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-91 STDM110
AO211DH/AO211/AO211D2/AO211D2B/AO211D4
2-AND into 3-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO211DH
Input Load (SL)
AO211DH AO211 AO211D2 AO211D2B AO211D4
ABCDABCDABCDABCDABCD
0.5 0.6 0.6 0.6 0.9 0.9 0.8 0.9 1.7 1.8 1.8 2.0 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9
Gate Count
AO211DH AO211 AO211D2 AO211D2B AO211D4
1.67 1.67 2.67 2.67 3.33
A
BY
C
D
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.767 0.333 + 0.217*SL 0.317 + 0.221*SL 0.331 + 0.219*SL
tF 0.383 0.161 + 0.111*SL 0.145 + 0.115*SL 0.134 + 0.117*SL
tPLH 0.345 0.146 + 0.100*SL 0.147 + 0.099*SL 0.149 + 0.099*SL
tPHL 0.250 0.137 + 0.057*SL 0.138 + 0.056*SL 0.138 + 0.056*SL
B to Y tR 0.803 0.369 + 0.217*SL 0.354 + 0.220*SL 0.368 + 0.219*SL
tF 0.379 0.153 + 0.113*SL 0.143 + 0.115*SL 0.134 + 0.117*SL
tPLH 0.370 0.172 + 0.099*SL 0.173 + 0.099*SL 0.174 + 0.099*SL
tPHL 0.245 0.132 + 0.057*SL 0.133 + 0.057*SL 0.135 + 0.056*SL
C to Y tR 0.817 0.385 + 0.216*SL 0.378 + 0.218*SL 0.376 + 0.218*SL
tF 0.281 0.160 + 0.060*SL 0.149 + 0.063*SL 0.135 + 0.065*SL
tPLH 0.479 0.279 + 0.100*SL 0.282 + 0.099*SL 0.285 + 0.099*SL
tPHL 0.221 0.152 + 0.034*SL 0.155 + 0.034*SL 0.157 + 0.033*SL
D to Y tR 0.817 0.385 + 0.216*SL 0.378 + 0.218*SL 0.376 + 0.218*SL
tF 0.306 0.185 + 0.061*SL 0.175 + 0.063*SL 0.162 + 0.065*SL
tPLH 0.493 0.294 + 0.100*SL 0.296 + 0.099*SL 0.299 + 0.099*SL
tPHL 0.230 0.159 + 0.035*SL 0.164 + 0.034*SL 0.169 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
0x001
x0001
Other States 0
STDM110 3-92 Samsung ASIC
AO211DH/AO211/AO211D2/AO211D2B/AO211D4
2-AND into 3-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO211
AO211D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.505 0.281 + 0.112*SL 0.270 + 0.115*SL 0.257 + 0.117*SL
tF 0.291 0.153 + 0.069*SL 0.142 + 0.072*SL 0.128 + 0.074*SL
tPLH 0.228 0.126 + 0.051*SL 0.120 + 0.053*SL 0.122 + 0.052*SL
tPHL 0.205 0.133 + 0.036*SL 0.134 + 0.036*SL 0.135 + 0.036*SL
B to Y tR 0.533 0.309 + 0.112*SL 0.299 + 0.115*SL 0.286 + 0.116*SL
tF 0.285 0.144 + 0.071*SL 0.136 + 0.073*SL 0.128 + 0.074*SL
tPLH 0.248 0.145 + 0.051*SL 0.141 + 0.052*SL 0.142 + 0.052*SL
tPHL 0.199 0.126 + 0.037*SL 0.128 + 0.036*SL 0.130 + 0.036*SL
C to Y tR 0.544 0.319 + 0.112*SL 0.311 + 0.114*SL 0.306 + 0.115*SL
tF 0.280 0.182 + 0.049*SL 0.176 + 0.051*SL 0.167 + 0.052*SL
tPLH 0.338 0.232 + 0.053*SL 0.235 + 0.052*SL 0.236 + 0.052*SL
tPHL 0.234 0.178 + 0.028*SL 0.181 + 0.027*SL 0.184 + 0.027*SL
D to Y tR 0.542 0.316 + 0.113*SL 0.310 + 0.115*SL 0.306 + 0.115*SL
tF 0.316 0.216 + 0.050*SL 0.212 + 0.051*SL 0.203 + 0.052*SL
tPLH 0.352 0.246 + 0.053*SL 0.248 + 0.052*SL 0.250 + 0.052*SL
tPHL 0.250 0.193 + 0.029*SL 0.197 + 0.028*SL 0.201 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.375 0.263 + 0.056*SL 0.256 + 0.057*SL 0.239 + 0.059*SL
tF 0.213 0.146 + 0.033*SL 0.138 + 0.035*SL 0.122 + 0.037*SL
tPLH 0.175 0.124 + 0.025*SL 0.119 + 0.027*SL 0.119 + 0.027*SL
tPHL 0.161 0.122 + 0.019*SL 0.127 + 0.018*SL 0.128 + 0.018*SL
B to Y tR 0.403 0.292 + 0.055*SL 0.285 + 0.057*SL 0.268 + 0.059*SL
tF 0.205 0.137 + 0.034*SL 0.129 + 0.036*SL 0.120 + 0.037*SL
tPLH 0.195 0.145 + 0.025*SL 0.140 + 0.026*SL 0.140 + 0.026*SL
tPHL 0.155 0.116 + 0.019*SL 0.121 + 0.018*SL 0.123 + 0.018*SL
C to Y tR 0.408 0.296 + 0.056*SL 0.290 + 0.057*SL 0.282 + 0.058*SL
tF 0.216 0.168 + 0.024*SL 0.165 + 0.025*SL 0.154 + 0.026*SL
tPLH 0.271 0.216 + 0.027*SL 0.218 + 0.027*SL 0.221 + 0.026*SL
tPHL 0.196 0.168 + 0.014*SL 0.170 + 0.014*SL 0.173 + 0.013*SL
D to Y tR 0.406 0.293 + 0.056*SL 0.287 + 0.058*SL 0.281 + 0.058*SL
tF 0.251 0.202 + 0.024*SL 0.200 + 0.025*SL 0.189 + 0.026*SL
tPLH 0.287 0.233 + 0.027*SL 0.235 + 0.027*SL 0.237 + 0.026*SL
tPHL 0.213 0.183 + 0.015*SL 0.186 + 0.014*SL 0.191 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-93 STDM110
AO211DH/AO211/AO211D2/AO211D2B/AO211D4
2-AND into 3-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO211D2B
AO211D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.116 0.080 + 0.018*SL 0.081 + 0.018*SL 0.069 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.395 0.371 + 0.012*SL 0.382 + 0.010*SL 0.392 + 0.009*SL
tPHL 0.376 0.351 + 0.013*SL 0.362 + 0.010*SL 0.376 + 0.009*SL
B to Y tR 0.116 0.080 + 0.018*SL 0.080 + 0.018*SL 0.071 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.420 0.396 + 0.012*SL 0.407 + 0.010*SL 0.417 + 0.009*SL
tPHL 0.371 0.346 + 0.013*SL 0.357 + 0.010*SL 0.371 + 0.009*SL
C to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.071 + 0.019*SL
tF 0.099 0.066 + 0.017*SL 0.072 + 0.015*SL 0.068 + 0.016*SL
tPLH 0.511 0.487 + 0.012*SL 0.497 + 0.010*SL 0.508 + 0.009*SL
tPHL 0.411 0.386 + 0.013*SL 0.398 + 0.010*SL 0.410 + 0.009*SL
D to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.527 0.502 + 0.012*SL 0.513 + 0.010*SL 0.523 + 0.009*SL
tPHL 0.435 0.410 + 0.013*SL 0.421 + 0.010*SL 0.434 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.105 0.085 + 0.010*SL 0.089 + 0.009*SL 0.081 + 0.009*SL
tF 0.087 0.067 + 0.010*SL 0.075 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.429 0.415 + 0.007*SL 0.423 + 0.005*SL 0.440 + 0.004*SL
tPHL 0.389 0.374 + 0.008*SL 0.382 + 0.005*SL 0.401 + 0.004*SL
B to Y tR 0.104 0.084 + 0.010*SL 0.090 + 0.009*SL 0.081 + 0.009*SL
tF 0.087 0.069 + 0.009*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.454 0.439 + 0.007*SL 0.448 + 0.005*SL 0.465 + 0.004*SL
tPHL 0.384 0.369 + 0.007*SL 0.377 + 0.005*SL 0.396 + 0.004*SL
C to Y tR 0.105 0.085 + 0.010*SL 0.089 + 0.009*SL 0.081 + 0.009*SL
tF 0.086 0.069 + 0.009*SL 0.072 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.545 0.530 + 0.007*SL 0.538 + 0.005*SL 0.556 + 0.004*SL
tPHL 0.418 0.403 + 0.007*SL 0.411 + 0.005*SL 0.430 + 0.004*SL
D to Y tR 0.105 0.086 + 0.010*SL 0.090 + 0.009*SL 0.082 + 0.009*SL
tF 0.088 0.070 + 0.009*SL 0.074 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.558 0.543 + 0.007*SL 0.552 + 0.005*SL 0.569 + 0.004*SL
tPHL 0.441 0.426 + 0.007*SL 0.434 + 0.005*SL 0.453 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-94 Samsung ASIC
AO2111/AO2111D2
2-AND into 4-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
A02111 AO2111D2 AO2111 AO2111D2
ABCDEABCDE
0.9 0.9 0.8 0.8 0.8 0.9 0.9 0.8 0.8 0.9 2.00 3.00
Y
C
D
A
B
E
Truth Table
ABCDEY
11xxx0
xx1xx0
xxx1x0
xxxx10
Other states 1
Samsung ASIC 3-95 STDM110
AO2111/AO2111D2
2-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO2111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.719 0.411 + 0.154*SL 0.402 + 0.156*SL 0.396 + 0.157*SL
tF 0.315 0.170 + 0.073*SL 0.158 + 0.076*SL 0.147 + 0.077*SL
tPLH 0.271 0.135 + 0.068*SL 0.124 + 0.071*SL 0.127 + 0.070*SL
tPHL 0.219 0.144 + 0.038*SL 0.144 + 0.038*SL 0.145 + 0.037*SL
B to Y tR 0.758 0.451 + 0.153*SL 0.441 + 0.156*SL 0.435 + 0.157*SL
tF 0.310 0.161 + 0.074*SL 0.155 + 0.076*SL 0.147 + 0.077*SL
tPLH 0.297 0.159 + 0.069*SL 0.153 + 0.070*SL 0.155 + 0.070*SL
tPHL 0.214 0.138 + 0.038*SL 0.140 + 0.038*SL 0.141 + 0.038*SL
C to Y tR 0.799 0.495 + 0.152*SL 0.489 + 0.153*SL 0.486 + 0.154*SL
tF 0.340 0.218 + 0.061*SL 0.213 + 0.062*SL 0.205 + 0.063*SL
tPLH 0.439 0.297 + 0.071*SL 0.300 + 0.070*SL 0.303 + 0.070*SL
tPHL 0.279 0.212 + 0.034*SL 0.215 + 0.033*SL 0.217 + 0.033*SL
D to Y tR 0.801 0.498 + 0.151*SL 0.491 + 0.153*SL 0.486 + 0.154*SL
tF 0.384 0.261 + 0.061*SL 0.257 + 0.062*SL 0.251 + 0.063*SL
tPLH 0.487 0.345 + 0.071*SL 0.348 + 0.070*SL 0.350 + 0.070*SL
tPHL 0.304 0.235 + 0.035*SL 0.240 + 0.033*SL 0.244 + 0.033*SL
E to Y tR 0.800 0.497 + 0.151*SL 0.491 + 0.153*SL 0.486 + 0.154*SL
tF 0.428 0.303 + 0.062*SL 0.300 + 0.063*SL 0.296 + 0.063*SL
tPLH 0.509 0.366 + 0.071*SL 0.369 + 0.070*SL 0.372 + 0.070*SL
tPHL 0.321 0.249 + 0.036*SL 0.256 + 0.034*SL 0.263 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-96 Samsung ASIC
AO2111/AO2111D2
2-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO2111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.120 0.084 + 0.018*SL 0.085 + 0.018*SL 0.075 + 0.018*SL
tF 0.101 0.068 + 0.016*SL 0.072 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.421 0.396 + 0.012*SL 0.408 + 0.010*SL 0.419 + 0.009*SL
tPHL 0.380 0.355 + 0.013*SL 0.366 + 0.010*SL 0.380 + 0.009*SL
B to Y tR 0.121 0.085 + 0.018*SL 0.088 + 0.017*SL 0.076 + 0.018*SL
tF 0.100 0.066 + 0.017*SL 0.072 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.452 0.427 + 0.013*SL 0.439 + 0.010*SL 0.450 + 0.009*SL
tPHL 0.374 0.349 + 0.013*SL 0.360 + 0.010*SL 0.374 + 0.009*SL
C to Y tR 0.123 0.088 + 0.018*SL 0.089 + 0.017*SL 0.078 + 0.018*SL
tF 0.101 0.068 + 0.016*SL 0.073 + 0.015*SL 0.068 + 0.016*SL
tPLH 0.595 0.569 + 0.013*SL 0.581 + 0.010*SL 0.593 + 0.009*SL
tPHL 0.449 0.424 + 0.013*SL 0.435 + 0.010*SL 0.449 + 0.009*SL
D to Y tR 0.122 0.087 + 0.018*SL 0.087 + 0.018*SL 0.078 + 0.018*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.644 0.619 + 0.013*SL 0.630 + 0.010*SL 0.642 + 0.009*SL
tPHL 0.481 0.456 + 0.013*SL 0.468 + 0.010*SL 0.481 + 0.009*SL
E to Y tR 0.122 0.087 + 0.018*SL 0.087 + 0.018*SL 0.078 + 0.018*SL
tF 0.104 0.071 + 0.016*SL 0.076 + 0.015*SL 0.072 + 0.016*SL
tPLH 0.665 0.640 + 0.013*SL 0.652 + 0.010*SL 0.663 + 0.009*SL
tPHL 0.504 0.479 + 0.013*SL 0.491 + 0.010*SL 0.504 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-97 STDM110
AO22DH/AO22/AO22D2/AO22D2B/AO22D4
Two 2-ANDs into 2-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO22DH
Input Load (SL)
AO22DH AO22 AO22D2 AO22D2B AO22D4
ABCDABCDABCDABCDABCD
0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 2.0 1.9 2.1 2.0 1.0 1.1 1.1 1.0 1.0 1.1 1.0 1.0
Gate Count
AO22DH AO22 AO22D2 AO22D2B AO22D4
1.67 1.67 2.67 2.67 3.33
C
D
A
BY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.578 0.238 + 0.170*SL 0.219 + 0.175*SL 0.221 + 0.175*SL
tF 0.379 0.166 + 0.106*SL 0.147 + 0.111*SL 0.131 + 0.113*SL
tPLH 0.305 0.147 + 0.079*SL 0.149 + 0.079*SL 0.150 + 0.078*SL
tPHL 0.232 0.121 + 0.056*SL 0.122 + 0.055*SL 0.125 + 0.055*SL
B to Y tR 0.608 0.267 + 0.171*SL 0.249 + 0.175*SL 0.251 + 0.175*SL
tF 0.372 0.155 + 0.109*SL 0.144 + 0.112*SL 0.132 + 0.113*SL
tPLH 0.326 0.168 + 0.079*SL 0.169 + 0.079*SL 0.170 + 0.078*SL
tPHL 0.226 0.114 + 0.056*SL 0.118 + 0.055*SL 0.121 + 0.055*SL
C to Y tR 0.580 0.237 + 0.172*SL 0.228 + 0.174*SL 0.226 + 0.174*SL
tF 0.445 0.228 + 0.109*SL 0.214 + 0.112*SL 0.206 + 0.113*SL
tPLH 0.382 0.223 + 0.080*SL 0.226 + 0.079*SL 0.228 + 0.078*SL
tPHL 0.304 0.189 + 0.057*SL 0.196 + 0.055*SL 0.200 + 0.055*SL
D to Y tR 0.610 0.266 + 0.172*SL 0.259 + 0.174*SL 0.256 + 0.174*SL
tF 0.442 0.221 + 0.110*SL 0.213 + 0.112*SL 0.206 + 0.113*SL
tPLH 0.404 0.246 + 0.079*SL 0.248 + 0.079*SL 0.249 + 0.078*SL
tPHL 0.299 0.185 + 0.057*SL 0.192 + 0.056*SL 0.196 + 0.055*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
11xx0
xx110
0x0x1
0xx01
x0x01
x00x1
STDM110 3-98 Samsung ASIC
AO22DH/AO22/AO22D2/AO22D2B/AO22D4
Two 2-ANDs into 2-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO22
AO22D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.355 0.208 + 0.074*SL 0.198 + 0.076*SL 0.186 + 0.078*SL
tF 0.255 0.157 + 0.049*SL 0.145 + 0.052*SL 0.134 + 0.053*SL
tPLH 0.202 0.133 + 0.035*SL 0.131 + 0.035*SL 0.132 + 0.035*SL
tPHL 0.164 0.108 + 0.028*SL 0.113 + 0.027*SL 0.114 + 0.027*SL
B to Y tR 0.381 0.233 + 0.074*SL 0.224 + 0.076*SL 0.211 + 0.078*SL
tF 0.246 0.145 + 0.051*SL 0.136 + 0.053*SL 0.128 + 0.054*SL
tPLH 0.221 0.151 + 0.035*SL 0.150 + 0.035*SL 0.151 + 0.035*SL
tPHL 0.158 0.101 + 0.028*SL 0.107 + 0.027*SL 0.109 + 0.027*SL
C to Y tR 0.351 0.201 + 0.075*SL 0.193 + 0.077*SL 0.187 + 0.078*SL
tF 0.312 0.210 + 0.051*SL 0.203 + 0.053*SL 0.194 + 0.054*SL
tPLH 0.260 0.188 + 0.036*SL 0.190 + 0.035*SL 0.192 + 0.035*SL
tPHL 0.232 0.176 + 0.028*SL 0.179 + 0.027*SL 0.182 + 0.027*SL
D to Y tR 0.376 0.225 + 0.076*SL 0.219 + 0.077*SL 0.213 + 0.078*SL
tF 0.306 0.202 + 0.052*SL 0.198 + 0.053*SL 0.192 + 0.054*SL
tPLH 0.280 0.209 + 0.036*SL 0.211 + 0.035*SL 0.212 + 0.035*SL
tPHL 0.227 0.170 + 0.028*SL 0.174 + 0.027*SL 0.178 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.284 0.211 + 0.037*SL 0.206 + 0.038*SL 0.191 + 0.039*SL
tF 0.217 0.168 + 0.025*SL 0.160 + 0.026*SL 0.144 + 0.028*SL
tPLH 0.172 0.137 + 0.018*SL 0.137 + 0.018*SL 0.137 + 0.018*SL
tPHL 0.138 0.106 + 0.016*SL 0.114 + 0.014*SL 0.116 + 0.014*SL
B to Y tR 0.312 0.238 + 0.037*SL 0.233 + 0.038*SL 0.220 + 0.039*SL
tF 0.206 0.155 + 0.025*SL 0.149 + 0.027*SL 0.137 + 0.028*SL
tPLH 0.193 0.158 + 0.018*SL 0.157 + 0.018*SL 0.158 + 0.018*SL
tPHL 0.134 0.103 + 0.016*SL 0.109 + 0.014*SL 0.112 + 0.014*SL
C to Y tR 0.276 0.201 + 0.037*SL 0.197 + 0.038*SL 0.188 + 0.039*SL
tF 0.257 0.207 + 0.025*SL 0.203 + 0.026*SL 0.193 + 0.027*SL
tPLH 0.221 0.185 + 0.018*SL 0.186 + 0.018*SL 0.189 + 0.018*SL
tPHL 0.200 0.171 + 0.014*SL 0.173 + 0.014*SL 0.177 + 0.014*SL
D to Y tR 0.305 0.228 + 0.038*SL 0.225 + 0.039*SL 0.218 + 0.039*SL
tF 0.250 0.198 + 0.026*SL 0.195 + 0.027*SL 0.189 + 0.027*SL
tPLH 0.244 0.208 + 0.018*SL 0.209 + 0.018*SL 0.211 + 0.018*SL
tPHL 0.196 0.167 + 0.015*SL 0.169 + 0.014*SL 0.173 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-99 STDM110
AO22DH/AO22/AO22D2/AO22D2B/AO22D4
Two 2-ANDs into 2-NOR with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO22D2B
AO22D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.110 0.075 + 0.018*SL 0.074 + 0.018*SL 0.065 + 0.019*SL
tF 0.101 0.068 + 0.017*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.364 0.341 + 0.012*SL 0.350 + 0.009*SL 0.359 + 0.009*SL
tPHL 0.338 0.313 + 0.013*SL 0.325 + 0.010*SL 0.338 + 0.009*SL
B to Y tR 0.111 0.075 + 0.018*SL 0.075 + 0.018*SL 0.065 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.072 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.390 0.366 + 0.012*SL 0.376 + 0.009*SL 0.384 + 0.009*SL
tPHL 0.334 0.308 + 0.013*SL 0.320 + 0.010*SL 0.333 + 0.009*SL
C to Y tR 0.110 0.074 + 0.018*SL 0.074 + 0.018*SL 0.065 + 0.019*SL
tF 0.101 0.068 + 0.016*SL 0.072 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.406 0.383 + 0.012*SL 0.393 + 0.009*SL 0.401 + 0.009*SL
tPHL 0.399 0.374 + 0.013*SL 0.385 + 0.010*SL 0.398 + 0.009*SL
D to Y tR 0.111 0.075 + 0.018*SL 0.075 + 0.018*SL 0.065 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.072 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.430 0.406 + 0.012*SL 0.416 + 0.009*SL 0.425 + 0.009*SL
tPHL 0.393 0.368 + 0.013*SL 0.379 + 0.010*SL 0.393 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.078 + 0.009*SL 0.079 + 0.009*SL 0.073 + 0.009*SL
tF 0.087 0.068 + 0.009*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.382 0.367 + 0.007*SL 0.375 + 0.005*SL 0.391 + 0.004*SL
tPHL 0.345 0.329 + 0.008*SL 0.338 + 0.006*SL 0.357 + 0.005*SL
B to Y tR 0.097 0.077 + 0.010*SL 0.081 + 0.009*SL 0.073 + 0.009*SL
tF 0.085 0.065 + 0.010*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.406 0.392 + 0.007*SL 0.400 + 0.005*SL 0.415 + 0.004*SL
tPHL 0.340 0.325 + 0.008*SL 0.333 + 0.006*SL 0.352 + 0.005*SL
C to Y tR 0.097 0.078 + 0.009*SL 0.080 + 0.009*SL 0.072 + 0.009*SL
tF 0.089 0.071 + 0.009*SL 0.075 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.436 0.421 + 0.007*SL 0.429 + 0.005*SL 0.445 + 0.004*SL
tPHL 0.417 0.402 + 0.008*SL 0.411 + 0.006*SL 0.430 + 0.005*SL
D to Y tR 0.097 0.077 + 0.010*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.089 0.069 + 0.010*SL 0.076 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.463 0.448 + 0.007*SL 0.456 + 0.005*SL 0.472 + 0.004*SL
tPHL 0.415 0.399 + 0.008*SL 0.408 + 0.006*SL 0.427 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-100 Samsung ASIC
AO22DHA/AO22A/AO22D2A/AO22D4A
2-AND and 2-NOR into 2-NOR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO22DHA AO22A AO22D2A AO22D4A
ABCDABCDABCDABCD
0.5 0.5 0.5 0.6 1.0 1.0 0.9 0.9 2.0 2.0 0.9 0.9 1.0 1.1 0.9 0.9
Gate Count
AO22DHA AO22A AO22D2A AO22D4A
2.67 2.67 3.67 4.33
C
D
A
BY
Truth Table
ABCDY
11xx0
xx000
Other States 1
Samsung ASIC 3-101 STDM110
AO22DHA/AO22A/AO22D2A/AO22D4A
2-AND and 2-NOR into 2-NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO22DHA
AO22A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.566 0.234 + 0.166*SL 0.215 + 0.171*SL 0.216 + 0.171*SL
tF 0.379 0.166 + 0.106*SL 0.147 + 0.111*SL 0.131 + 0.113*SL
tPLH 0.299 0.145 + 0.077*SL 0.146 + 0.077*SL 0.148 + 0.077*SL
tPHL 0.231 0.120 + 0.056*SL 0.122 + 0.055*SL 0.124 + 0.055*SL
B to Y tR 0.595 0.263 + 0.166*SL 0.244 + 0.171*SL 0.246 + 0.171*SL
tF 0.373 0.155 + 0.109*SL 0.144 + 0.112*SL 0.132 + 0.113*SL
tPLH 0.319 0.166 + 0.077*SL 0.167 + 0.077*SL 0.168 + 0.077*SL
tPHL 0.226 0.114 + 0.056*SL 0.117 + 0.055*SL 0.120 + 0.055*SL
C to Y tR 0.572 0.232 + 0.170*SL 0.227 + 0.172*SL 0.225 + 0.172*SL
tF 0.448 0.225 + 0.111*SL 0.220 + 0.113*SL 0.217 + 0.113*SL
tPLH 0.453 0.296 + 0.078*SL 0.300 + 0.077*SL 0.302 + 0.077*SL
tPHL 0.402 0.287 + 0.057*SL 0.295 + 0.056*SL 0.299 + 0.055*SL
D to Y tR 0.597 0.259 + 0.169*SL 0.254 + 0.170*SL 0.252 + 0.170*SL
tF 0.446 0.222 + 0.112*SL 0.219 + 0.113*SL 0.216 + 0.113*SL
tPLH 0.467 0.312 + 0.077*SL 0.315 + 0.077*SL 0.316 + 0.077*SL
tPHL 0.403 0.288 + 0.057*SL 0.296 + 0.056*SL 0.301 + 0.055*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.356 0.209 + 0.074*SL 0.199 + 0.076*SL 0.186 + 0.078*SL
tF 0.256 0.158 + 0.049*SL 0.146 + 0.052*SL 0.134 + 0.053*SL
tPLH 0.202 0.133 + 0.035*SL 0.131 + 0.035*SL 0.132 + 0.035*SL
tPHL 0.164 0.108 + 0.028*SL 0.112 + 0.027*SL 0.114 + 0.027*SL
B to Y tR 0.382 0.234 + 0.074*SL 0.225 + 0.076*SL 0.212 + 0.078*SL
tF 0.246 0.144 + 0.051*SL 0.136 + 0.053*SL 0.128 + 0.054*SL
tPLH 0.221 0.151 + 0.035*SL 0.150 + 0.035*SL 0.151 + 0.035*SL
tPHL 0.158 0.101 + 0.028*SL 0.107 + 0.027*SL 0.108 + 0.027*SL
C to Y tR 0.348 0.196 + 0.076*SL 0.191 + 0.077*SL 0.187 + 0.078*SL
tF 0.301 0.194 + 0.053*SL 0.191 + 0.054*SL 0.190 + 0.054*SL
tPLH 0.382 0.310 + 0.036*SL 0.313 + 0.035*SL 0.315 + 0.035*SL
tPHL 0.295 0.238 + 0.028*SL 0.242 + 0.027*SL 0.246 + 0.027*SL
D to Y tR 0.375 0.222 + 0.076*SL 0.218 + 0.077*SL 0.214 + 0.078*SL
tF 0.300 0.192 + 0.054*SL 0.191 + 0.054*SL 0.189 + 0.054*SL
tPLH 0.400 0.328 + 0.036*SL 0.330 + 0.035*SL 0.332 + 0.035*SL
tPHL 0.299 0.242 + 0.028*SL 0.246 + 0.027*SL 0.250 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-102 Samsung ASIC
AO22DHA/AO22A/AO22D2A/AO22D4A
2-AND and 2-NOR into 2-NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO22D2A
AO22D4A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.286 0.212 + 0.037*SL 0.208 + 0.038*SL 0.193 + 0.039*SL
tF 0.217 0.168 + 0.025*SL 0.161 + 0.026*SL 0.145 + 0.028*SL
tPLH 0.172 0.136 + 0.018*SL 0.136 + 0.018*SL 0.137 + 0.018*SL
tPHL 0.138 0.106 + 0.016*SL 0.114 + 0.014*SL 0.115 + 0.014*SL
B to Y tR 0.314 0.240 + 0.037*SL 0.235 + 0.038*SL 0.222 + 0.039*SL
tF 0.207 0.156 + 0.025*SL 0.149 + 0.027*SL 0.138 + 0.028*SL
tPLH 0.193 0.158 + 0.018*SL 0.157 + 0.018*SL 0.158 + 0.018*SL
tPHL 0.134 0.102 + 0.016*SL 0.109 + 0.014*SL 0.111 + 0.014*SL
C to Y tR 0.278 0.202 + 0.038*SL 0.198 + 0.039*SL 0.193 + 0.039*SL
tF 0.249 0.195 + 0.027*SL 0.195 + 0.027*SL 0.191 + 0.027*SL
tPLH 0.374 0.336 + 0.019*SL 0.339 + 0.018*SL 0.343 + 0.018*SL
tPHL 0.302 0.273 + 0.015*SL 0.276 + 0.014*SL 0.281 + 0.014*SL
D to Y tR 0.306 0.230 + 0.038*SL 0.226 + 0.039*SL 0.221 + 0.039*SL
tF 0.246 0.192 + 0.027*SL 0.192 + 0.027*SL 0.190 + 0.027*SL
tPLH 0.388 0.351 + 0.018*SL 0.353 + 0.018*SL 0.355 + 0.018*SL
tPHL 0.303 0.273 + 0.015*SL 0.276 + 0.014*SL 0.282 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.097 0.077 + 0.010*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.088 0.069 + 0.010*SL 0.075 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.384 0.370 + 0.007*SL 0.378 + 0.005*SL 0.393 + 0.004*SL
tPHL 0.346 0.331 + 0.008*SL 0.340 + 0.006*SL 0.359 + 0.005*SL
B to Y tR 0.097 0.076 + 0.010*SL 0.082 + 0.009*SL 0.073 + 0.009*SL
tF 0.088 0.070 + 0.009*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.409 0.395 + 0.007*SL 0.403 + 0.005*SL 0.418 + 0.004*SL
tPHL 0.342 0.326 + 0.008*SL 0.335 + 0.006*SL 0.354 + 0.005*SL
C to Y tR 0.097 0.077 + 0.010*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.088 0.070 + 0.009*SL 0.074 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.563 0.548 + 0.007*SL 0.556 + 0.005*SL 0.572 + 0.004*SL
tPHL 0.482 0.466 + 0.008*SL 0.475 + 0.006*SL 0.494 + 0.005*SL
D to Y tR 0.097 0.076 + 0.010*SL 0.082 + 0.009*SL 0.073 + 0.009*SL
tF 0.086 0.066 + 0.010*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.588 0.574 + 0.007*SL 0.582 + 0.005*SL 0.597 + 0.004*SL
tPHL 0.488 0.472 + 0.008*SL 0.481 + 0.006*SL 0.500 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-103 STDM110
AO221/AO221D2/AO221D4
Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO221 AO221D2 AO221D4
ABCDEABCDEABCDE
0.9 0.9 0.9 1.0 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9
Gate Count
AO221 AO221D2 AO221D4
2.00 3.00 3.67
C
D
A
B
Y
E
Truth Table
ABCDEY
11xxx0
xx11x0
xxxx10
Other States 1
STDM110 3-104 Samsung ASIC
AO221/AO221D2/AO221D4
Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO221
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.554 0.322 + 0.116*SL 0.313 + 0.118*SL 0.302 + 0.120*SL
tF 0.307 0.181 + 0.063*SL 0.169 + 0.066*SL 0.157 + 0.068*SL
tPLH 0.256 0.151 + 0.053*SL 0.147 + 0.054*SL 0.149 + 0.054*SL
tPHL 0.198 0.130 + 0.034*SL 0.132 + 0.034*SL 0.133 + 0.033*SL
B to Y tR 0.588 0.356 + 0.116*SL 0.346 + 0.119*SL 0.336 + 0.120*SL
tF 0.300 0.171 + 0.065*SL 0.162 + 0.067*SL 0.156 + 0.068*SL
tPLH 0.280 0.174 + 0.053*SL 0.172 + 0.054*SL 0.173 + 0.054*SL
tPHL 0.193 0.124 + 0.034*SL 0.127 + 0.034*SL 0.129 + 0.033*SL
C to Y tR 0.568 0.337 + 0.115*SL 0.330 + 0.117*SL 0.326 + 0.118*SL
tF 0.367 0.236 + 0.065*SL 0.229 + 0.067*SL 0.220 + 0.068*SL
tPLH 0.352 0.242 + 0.055*SL 0.246 + 0.054*SL 0.248 + 0.053*SL
tPHL 0.272 0.203 + 0.035*SL 0.206 + 0.034*SL 0.209 + 0.033*SL
D to Y tR 0.603 0.370 + 0.117*SL 0.364 + 0.118*SL 0.361 + 0.118*SL
tF 0.364 0.231 + 0.066*SL 0.226 + 0.067*SL 0.221 + 0.068*SL
tPLH 0.380 0.271 + 0.055*SL 0.274 + 0.054*SL 0.275 + 0.054*SL
tPHL 0.268 0.199 + 0.035*SL 0.203 + 0.034*SL 0.206 + 0.033*SL
E to Y tR 0.603 0.370 + 0.117*SL 0.365 + 0.118*SL 0.361 + 0.118*SL
tF 0.301 0.219 + 0.041*SL 0.215 + 0.042*SL 0.208 + 0.043*SL
tPLH 0.420 0.311 + 0.055*SL 0.313 + 0.054*SL 0.315 + 0.054*SL
tPHL 0.233 0.183 + 0.025*SL 0.188 + 0.024*SL 0.194 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-105 STDM110
AO221/AO221D2/AO221D4
Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO221D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.115 0.079 + 0.018*SL 0.080 + 0.018*SL 0.069 + 0.019*SL
tF 0.102 0.069 + 0.016*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.417 0.392 + 0.012*SL 0.403 + 0.010*SL 0.413 + 0.009*SL
tPHL 0.382 0.356 + 0.013*SL 0.368 + 0.010*SL 0.382 + 0.009*SL
B to Y tR 0.117 0.081 + 0.018*SL 0.080 + 0.018*SL 0.070 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.446 0.421 + 0.013*SL 0.432 + 0.010*SL 0.442 + 0.009*SL
tPHL 0.376 0.350 + 0.013*SL 0.362 + 0.010*SL 0.376 + 0.009*SL
C to Y tR 0.116 0.080 + 0.018*SL 0.079 + 0.018*SL 0.070 + 0.019*SL
tF 0.103 0.070 + 0.016*SL 0.075 + 0.015*SL 0.071 + 0.016*SL
tPLH 0.542 0.517 + 0.012*SL 0.528 + 0.010*SL 0.538 + 0.009*SL
tPHL 0.475 0.449 + 0.013*SL 0.461 + 0.010*SL 0.476 + 0.009*SL
D to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.103 0.070 + 0.016*SL 0.075 + 0.015*SL 0.071 + 0.016*SL
tPLH 0.573 0.548 + 0.013*SL 0.560 + 0.010*SL 0.570 + 0.009*SL
tPHL 0.470 0.444 + 0.013*SL 0.457 + 0.010*SL 0.471 + 0.009*SL
E to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.612 0.587 + 0.013*SL 0.598 + 0.010*SL 0.609 + 0.009*SL
tPHL 0.429 0.403 + 0.013*SL 0.415 + 0.010*SL 0.429 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-106 Samsung ASIC
AO221/AO221D2/AO221D4
Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO221D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.088 + 0.010*SL 0.090 + 0.009*SL 0.085 + 0.009*SL
tF 0.090 0.071 + 0.009*SL 0.076 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.462 0.447 + 0.008*SL 0.456 + 0.005*SL 0.475 + 0.004*SL
tPHL 0.393 0.378 + 0.008*SL 0.387 + 0.006*SL 0.406 + 0.005*SL
B to Y tR 0.108 0.088 + 0.010*SL 0.092 + 0.009*SL 0.085 + 0.009*SL
tF 0.088 0.068 + 0.010*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.490 0.475 + 0.008*SL 0.484 + 0.005*SL 0.503 + 0.004*SL
tPHL 0.388 0.372 + 0.008*SL 0.381 + 0.006*SL 0.401 + 0.005*SL
C to Y tR 0.107 0.087 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.076 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.587 0.572 + 0.008*SL 0.580 + 0.005*SL 0.600 + 0.004*SL
tPHL 0.487 0.471 + 0.008*SL 0.480 + 0.006*SL 0.500 + 0.005*SL
D to Y tR 0.108 0.087 + 0.010*SL 0.093 + 0.009*SL 0.085 + 0.009*SL
tF 0.091 0.072 + 0.009*SL 0.077 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.618 0.602 + 0.008*SL 0.611 + 0.006*SL 0.631 + 0.004*SL
tPHL 0.483 0.467 + 0.008*SL 0.476 + 0.006*SL 0.495 + 0.005*SL
E to Y tR 0.108 0.087 + 0.010*SL 0.093 + 0.009*SL 0.085 + 0.009*SL
tF 0.088 0.070 + 0.009*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.658 0.642 + 0.008*SL 0.651 + 0.006*SL 0.670 + 0.004*SL
tPHL 0.437 0.421 + 0.008*SL 0.430 + 0.006*SL 0.449 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-107 STDM110
AO222/AO222D2/AO222D2B/AO222D4
Three 2-ANDs into 3-NOR with 1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO222 AO222D2 AO222 AO222D2
ABCDEFABCDEF
0.9 0.9 1.0 0.9 1.0 1.0 1.8 1.9 1.8 1.9 1.8 2.0 2.33 4.33
AO222D2B AO222D4 AO22D2B AO222D4
ABCDEFABCDEF
0.9 1.0 0.9 1.0 0.9 1.0 0.9 0.9 0.9 1.0 1.0 1.0 3.33 4.00
C
D
A
B
Y
E
F
Truth Table
ABCDEFY
11xxxx0
xx11xx0
xxxx110
Other States 1
STDM110 3-108 Samsung ASIC
AO222/AO222D2/AO222D2B/AO222D4
Three 2-ANDs into 3-NOR with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.594 0.361 + 0.116*SL 0.353 + 0.118*SL 0.344 + 0.120*SL
tF 0.327 0.206 + 0.061*SL 0.195 + 0.063*SL 0.182 + 0.065*SL
tPLH 0.273 0.168 + 0.053*SL 0.164 + 0.054*SL 0.166 + 0.053*SL
tPHL 0.196 0.130 + 0.033*SL 0.131 + 0.033*SL 0.135 + 0.032*SL
B to Y tR 0.627 0.394 + 0.116*SL 0.387 + 0.118*SL 0.378 + 0.120*SL
tF 0.320 0.196 + 0.062*SL 0.187 + 0.064*SL 0.180 + 0.065*SL
tPLH 0.297 0.191 + 0.053*SL 0.189 + 0.053*SL 0.190 + 0.053*SL
tPHL 0.190 0.123 + 0.033*SL 0.126 + 0.033*SL 0.130 + 0.032*SL
C to Y tR 0.617 0.387 + 0.115*SL 0.382 + 0.116*SL 0.378 + 0.117*SL
tF 0.404 0.278 + 0.063*SL 0.271 + 0.065*SL 0.263 + 0.066*SL
tPLH 0.400 0.292 + 0.054*SL 0.295 + 0.054*SL 0.298 + 0.053*SL
tPHL 0.284 0.216 + 0.034*SL 0.220 + 0.033*SL 0.224 + 0.032*SL
D to Y tR 0.654 0.423 + 0.116*SL 0.418 + 0.117*SL 0.414 + 0.118*SL
tF 0.401 0.273 + 0.064*SL 0.269 + 0.065*SL 0.264 + 0.066*SL
tPLH 0.426 0.318 + 0.054*SL 0.320 + 0.054*SL 0.322 + 0.053*SL
tPHL 0.278 0.210 + 0.034*SL 0.214 + 0.033*SL 0.219 + 0.032*SL
E to Y tR 0.619 0.389 + 0.115*SL 0.383 + 0.117*SL 0.379 + 0.117*SL
tF 0.471 0.343 + 0.064*SL 0.340 + 0.065*SL 0.334 + 0.066*SL
tPLH 0.448 0.339 + 0.054*SL 0.342 + 0.054*SL 0.345 + 0.053*SL
tPHL 0.332 0.260 + 0.036*SL 0.267 + 0.034*SL 0.275 + 0.033*SL
F to Y tR 0.655 0.423 + 0.116*SL 0.418 + 0.117*SL 0.414 + 0.118*SL
tF 0.471 0.342 + 0.065*SL 0.339 + 0.065*SL 0.336 + 0.066*SL
tPLH 0.475 0.366 + 0.054*SL 0.369 + 0.054*SL 0.371 + 0.053*SL
tPHL 0.327 0.255 + 0.036*SL 0.263 + 0.034*SL 0.271 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-109 STDM110
AO222/AO222D2/AO222D2B/AO222D4
Three 2-ANDs into 3-NOR with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.490 0.375 + 0.058*SL 0.370 + 0.059*SL 0.359 + 0.060*SL
tF 0.275 0.216 + 0.030*SL 0.210 + 0.031*SL 0.195 + 0.032*SL
tPLH 0.235 0.183 + 0.026*SL 0.180 + 0.027*SL 0.181 + 0.027*SL
tPHL 0.169 0.136 + 0.017*SL 0.137 + 0.016*SL 0.140 + 0.016*SL
B to Y tR 0.524 0.408 + 0.058*SL 0.404 + 0.059*SL 0.393 + 0.060*SL
tF 0.267 0.206 + 0.031*SL 0.201 + 0.032*SL 0.192 + 0.033*SL
tPLH 0.261 0.208 + 0.027*SL 0.206 + 0.027*SL 0.207 + 0.027*SL
tPHL 0.164 0.129 + 0.017*SL 0.132 + 0.016*SL 0.136 + 0.016*SL
C to Y tR 0.511 0.395 + 0.058*SL 0.391 + 0.059*SL 0.386 + 0.059*SL
tF 0.330 0.268 + 0.031*SL 0.265 + 0.032*SL 0.255 + 0.033*SL
tPLH 0.334 0.278 + 0.028*SL 0.280 + 0.027*SL 0.284 + 0.027*SL
tPHL 0.241 0.207 + 0.017*SL 0.209 + 0.017*SL 0.213 + 0.016*SL
D to Y tR 0.542 0.426 + 0.058*SL 0.422 + 0.059*SL 0.418 + 0.059*SL
tF 0.326 0.263 + 0.032*SL 0.261 + 0.032*SL 0.255 + 0.033*SL
tPLH 0.361 0.306 + 0.027*SL 0.308 + 0.027*SL 0.310 + 0.027*SL
tPHL 0.237 0.203 + 0.017*SL 0.205 + 0.017*SL 0.210 + 0.016*SL
E to Y tR 0.511 0.396 + 0.058*SL 0.392 + 0.059*SL 0.387 + 0.059*SL
tF 0.402 0.338 + 0.032*SL 0.336 + 0.032*SL 0.329 + 0.033*SL
tPLH 0.389 0.334 + 0.028*SL 0.336 + 0.027*SL 0.339 + 0.027*SL
tPHL 0.291 0.254 + 0.018*SL 0.259 + 0.017*SL 0.267 + 0.017*SL
F to Y tR 0.542 0.426 + 0.058*SL 0.423 + 0.059*SL 0.419 + 0.059*SL
tF 0.400 0.336 + 0.032*SL 0.335 + 0.032*SL 0.331 + 0.033*SL
tPLH 0.416 0.361 + 0.027*SL 0.362 + 0.027*SL 0.365 + 0.027*SL
tPHL 0.287 0.250 + 0.018*SL 0.255 + 0.017*SL 0.264 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-110 Samsung ASIC
AO222/AO222D2/AO222D2B/AO222D4
Three 2-ANDs into 3-NOR with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222D2B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.116 0.080 + 0.018*SL 0.080 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.070 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.447 0.422 + 0.013*SL 0.433 + 0.010*SL 0.444 + 0.009*SL
tPHL 0.389 0.362 + 0.013*SL 0.374 + 0.010*SL 0.388 + 0.009*SL
B to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.070 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.476 0.451 + 0.013*SL 0.463 + 0.010*SL 0.473 + 0.009*SL
tPHL 0.384 0.357 + 0.013*SL 0.370 + 0.010*SL 0.384 + 0.009*SL
C to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.069 + 0.017*SL 0.075 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.572 0.547 + 0.013*SL 0.559 + 0.010*SL 0.569 + 0.009*SL
tPHL 0.480 0.453 + 0.013*SL 0.466 + 0.010*SL 0.480 + 0.009*SL
D to Y tR 0.117 0.081 + 0.018*SL 0.079 + 0.018*SL 0.071 + 0.019*SL
tF 0.104 0.069 + 0.017*SL 0.075 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.603 0.578 + 0.013*SL 0.589 + 0.010*SL 0.600 + 0.009*SL
tPHL 0.476 0.449 + 0.013*SL 0.462 + 0.010*SL 0.476 + 0.009*SL
E to Y tR 0.117 0.080 + 0.018*SL 0.081 + 0.018*SL 0.070 + 0.019*SL
tF 0.106 0.070 + 0.018*SL 0.078 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.618 0.592 + 0.013*SL 0.604 + 0.010*SL 0.614 + 0.009*SL
tPHL 0.531 0.504 + 0.013*SL 0.517 + 0.010*SL 0.531 + 0.009*SL
F to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.071 + 0.019*SL
tF 0.107 0.073 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.647 0.622 + 0.013*SL 0.633 + 0.010*SL 0.644 + 0.009*SL
tPHL 0.526 0.499 + 0.013*SL 0.512 + 0.010*SL 0.526 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-111 STDM110
AO222/AO222D2/AO222D2B/AO222D4
Three 2-ANDs into 3-NOR with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.086 + 0.010*SL 0.092 + 0.009*SL 0.084 + 0.009*SL
tF 0.090 0.070 + 0.010*SL 0.078 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.497 0.481 + 0.008*SL 0.490 + 0.005*SL 0.508 + 0.004*SL
tPHL 0.407 0.392 + 0.008*SL 0.400 + 0.006*SL 0.420 + 0.005*SL
B to Y tR 0.108 0.089 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.091 0.073 + 0.009*SL 0.076 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.523 0.508 + 0.008*SL 0.517 + 0.005*SL 0.535 + 0.004*SL
tPHL 0.401 0.386 + 0.008*SL 0.394 + 0.006*SL 0.414 + 0.005*SL
C to Y tR 0.108 0.089 + 0.009*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.622 0.607 + 0.008*SL 0.616 + 0.005*SL 0.634 + 0.004*SL
tPHL 0.497 0.481 + 0.008*SL 0.490 + 0.006*SL 0.510 + 0.005*SL
D to Y tR 0.108 0.089 + 0.010*SL 0.093 + 0.009*SL 0.084 + 0.009*SL
tF 0.091 0.071 + 0.010*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.652 0.637 + 0.008*SL 0.646 + 0.005*SL 0.664 + 0.004*SL
tPHL 0.492 0.477 + 0.008*SL 0.486 + 0.006*SL 0.506 + 0.005*SL
E to Y tR 0.107 0.086 + 0.010*SL 0.092 + 0.009*SL 0.083 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.081 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.665 0.650 + 0.008*SL 0.658 + 0.005*SL 0.677 + 0.004*SL
tPHL 0.547 0.531 + 0.008*SL 0.540 + 0.006*SL 0.560 + 0.005*SL
F to Y tR 0.108 0.088 + 0.010*SL 0.093 + 0.009*SL 0.084 + 0.009*SL
tF 0.093 0.073 + 0.010*SL 0.080 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.694 0.679 + 0.008*SL 0.688 + 0.005*SL 0.706 + 0.004*SL
tPHL 0.542 0.527 + 0.008*SL 0.535 + 0.006*SL 0.556 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-112 Samsung ASIC
AO222A/AO222D2A/AO222D4A
Inverting 2-of-3 Majority with 1X/2X/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222A
Input Load (SL) Gate Count
AO222A AO222D2A AO222D4A AO222A AO222D2A AO222D4A
ABCABCABC
1.7 1.9 1.9 1.7 2.0 1.9 1.7 1.9 1.9 2.33 3.33 3.67
A
B
Y
C
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.523 0.376 + 0.073*SL 0.367 + 0.075*SL 0.356 + 0.077*SL
tF 0.361 0.239 + 0.061*SL 0.233 + 0.063*SL 0.226 + 0.064*SL
tPLH 0.245 0.175 + 0.035*SL 0.175 + 0.035*SL 0.176 + 0.035*SL
tPHL 0.261 0.197 + 0.032*SL 0.199 + 0.032*SL 0.202 + 0.031*SL
B to Y tR 0.521 0.372 + 0.074*SL 0.366 + 0.076*SL 0.359 + 0.077*SL
tF 0.377 0.254 + 0.061*SL 0.249 + 0.063*SL 0.243 + 0.064*SL
tPLH 0.267 0.197 + 0.035*SL 0.198 + 0.035*SL 0.199 + 0.035*SL
tPHL 0.295 0.231 + 0.032*SL 0.234 + 0.031*SL 0.237 + 0.031*SL
C to Y tR 0.483 0.335 + 0.074*SL 0.329 + 0.075*SL 0.322 + 0.076*SL
tF 0.380 0.256 + 0.062*SL 0.253 + 0.062*SL 0.248 + 0.063*SL
tPLH 0.264 0.195 + 0.035*SL 0.195 + 0.035*SL 0.196 + 0.034*SL
tPHL 0.270 0.206 + 0.032*SL 0.208 + 0.031*SL 0.210 + 0.031*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
11x0
1x10
x110
00x1
0x01
x001
Samsung ASIC 3-113 STDM110
AO222A/AO222D2A/AO222D4A
Inverting 2-of-3 Majority with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO222D2A
AO222D4A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.118 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.069 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.433 0.408 + 0.013*SL 0.420 + 0.010*SL 0.430 + 0.009*SL
tPHL 0.456 0.430 + 0.013*SL 0.442 + 0.010*SL 0.456 + 0.009*SL
B to Y tR 0.117 0.081 + 0.018*SL 0.082 + 0.018*SL 0.070 + 0.019*SL
tF 0.104 0.069 + 0.017*SL 0.075 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.443 0.419 + 0.012*SL 0.429 + 0.010*SL 0.438 + 0.009*SL
tPHL 0.490 0.464 + 0.013*SL 0.476 + 0.010*SL 0.490 + 0.009*SL
C to Y tR 0.114 0.079 + 0.018*SL 0.077 + 0.018*SL 0.068 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.075 + 0.016*SL 0.069 + 0.016*SL
tPLH 0.443 0.418 + 0.012*SL 0.429 + 0.010*SL 0.439 + 0.009*SL
tPHL 0.462 0.436 + 0.013*SL 0.448 + 0.010*SL 0.462 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.106 0.087 + 0.009*SL 0.088 + 0.009*SL 0.082 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.077 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.461 0.446 + 0.008*SL 0.455 + 0.005*SL 0.473 + 0.004*SL
tPHL 0.465 0.449 + 0.008*SL 0.458 + 0.006*SL 0.478 + 0.005*SL
B to Y tR 0.106 0.087 + 0.009*SL 0.088 + 0.009*SL 0.083 + 0.009*SL
tF 0.091 0.072 + 0.009*SL 0.077 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.468 0.453 + 0.007*SL 0.461 + 0.005*SL 0.478 + 0.004*SL
tPHL 0.498 0.482 + 0.008*SL 0.491 + 0.006*SL 0.510 + 0.005*SL
C to Y tR 0.103 0.083 + 0.010*SL 0.087 + 0.009*SL 0.078 + 0.009*SL
tF 0.089 0.069 + 0.010*SL 0.076 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.471 0.456 + 0.007*SL 0.464 + 0.005*SL 0.482 + 0.004*SL
tPHL 0.472 0.456 + 0.008*SL 0.465 + 0.006*SL 0.484 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-114 Samsung ASIC
AO2222/AO2222D2/AO2222D4
Four 2-ANDs into 4-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO2222 AO2222
ABCDEFGH
0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 3.00
AO2222D2 AO2222D2
ABCDEFGH
0.9 1.0 0.9 0.9 0.9 0.9 0.9 0.9 4.33
AO2222D4 AO2222D4
ABCDEFGH
0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 5.00
Y
C
D
A
B
E
F
G
H
Truth Table
ABCDEFGHY
11xxxxxx0
xx11xxxx0
xxxx11xx0
xxxxxx110
Other States 1
Samsung ASIC 3-115 STDM110
AO2222/AO2222D2/AO2222D4
Four 2-ANDs into 4-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO2222
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.831 0.513 + 0.159*SL 0.508 + 0.161*SL 0.502 + 0.161*SL
tF 0.385 0.249 + 0.068*SL 0.239 + 0.070*SL 0.224 + 0.072*SL
tPLH 0.303 0.168 + 0.068*SL 0.150 + 0.072*SL 0.152 + 0.072*SL
tPHL 0.220 0.146 + 0.037*SL 0.148 + 0.036*SL 0.153 + 0.036*SL
B to Y tR 0.873 0.554 + 0.159*SL 0.549 + 0.161*SL 0.543 + 0.162*SL
tF 0.379 0.240 + 0.069*SL 0.233 + 0.071*SL 0.225 + 0.072*SL
tPLH 0.329 0.191 + 0.069*SL 0.179 + 0.072*SL 0.180 + 0.072*SL
tPHL 0.213 0.139 + 0.037*SL 0.142 + 0.036*SL 0.148 + 0.036*SL
C to Y tR 0.911 0.601 + 0.155*SL 0.596 + 0.156*SL 0.593 + 0.157*SL
tF 0.473 0.333 + 0.070*SL 0.327 + 0.072*SL 0.320 + 0.073*SL
tPLH 0.498 0.352 + 0.073*SL 0.357 + 0.072*SL 0.361 + 0.072*SL
tPHL 0.321 0.247 + 0.037*SL 0.251 + 0.036*SL 0.256 + 0.036*SL
D to Y tR 0.953 0.642 + 0.156*SL 0.638 + 0.157*SL 0.635 + 0.157*SL
tF 0.472 0.330 + 0.071*SL 0.327 + 0.072*SL 0.321 + 0.072*SL
tPLH 0.528 0.383 + 0.073*SL 0.386 + 0.072*SL 0.389 + 0.072*SL
tPHL 0.315 0.241 + 0.037*SL 0.245 + 0.036*SL 0.250 + 0.036*SL
E to Y tR 0.959 0.651 + 0.154*SL 0.644 + 0.156*SL 0.638 + 0.157*SL
tF 0.560 0.419 + 0.071*SL 0.414 + 0.072*SL 0.409 + 0.073*SL
tPLH 0.633 0.486 + 0.073*SL 0.491 + 0.072*SL 0.495 + 0.072*SL
tPHL 0.370 0.292 + 0.039*SL 0.299 + 0.037*SL 0.306 + 0.036*SL
F to Y tR 0.998 0.689 + 0.154*SL 0.684 + 0.156*SL 0.678 + 0.156*SL
tF 0.560 0.418 + 0.071*SL 0.415 + 0.072*SL 0.411 + 0.072*SL
tPLH 0.664 0.518 + 0.073*SL 0.522 + 0.072*SL 0.524 + 0.071*SL
tPHL 0.366 0.289 + 0.039*SL 0.295 + 0.037*SL 0.303 + 0.036*SL
G to Y tR 0.961 0.652 + 0.154*SL 0.645 + 0.156*SL 0.639 + 0.157*SL
tF 0.665 0.520 + 0.072*SL 0.518 + 0.073*SL 0.517 + 0.073*SL
tPLH 0.699 0.552 + 0.073*SL 0.557 + 0.072*SL 0.561 + 0.072*SL
tPHL 0.408 0.325 + 0.041*SL 0.335 + 0.039*SL 0.347 + 0.037*SL
H to Y tR 0.998 0.690 + 0.154*SL 0.684 + 0.156*SL 0.678 + 0.156*SL
tF 0.665 0.519 + 0.073*SL 0.520 + 0.073*SL 0.520 + 0.073*SL
tPLH 0.728 0.583 + 0.073*SL 0.586 + 0.072*SL 0.589 + 0.071*SL
tPHL 0.404 0.321 + 0.041*SL 0.331 + 0.039*SL 0.343 + 0.037*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-116 Samsung ASIC
AO2222/AO2222D2/AO2222D4
Four 2-ANDs into 4-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO2222D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.122 0.085 + 0.018*SL 0.087 + 0.018*SL 0.076 + 0.019*SL
tF 0.105 0.070 + 0.018*SL 0.076 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.468 0.442 + 0.013*SL 0.455 + 0.010*SL 0.467 + 0.009*SL
tPHL 0.416 0.389 + 0.013*SL 0.402 + 0.010*SL 0.417 + 0.009*SL
B to Y tR 0.123 0.087 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.502 0.475 + 0.013*SL 0.488 + 0.010*SL 0.501 + 0.009*SL
tPHL 0.411 0.384 + 0.013*SL 0.397 + 0.010*SL 0.411 + 0.009*SL
C to Y tR 0.124 0.088 + 0.018*SL 0.090 + 0.018*SL 0.079 + 0.019*SL
tF 0.107 0.072 + 0.017*SL 0.077 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.663 0.637 + 0.013*SL 0.650 + 0.010*SL 0.663 + 0.009*SL
tPHL 0.525 0.498 + 0.014*SL 0.511 + 0.010*SL 0.526 + 0.009*SL
D to Y tR 0.126 0.089 + 0.018*SL 0.091 + 0.018*SL 0.079 + 0.019*SL
tF 0.106 0.071 + 0.018*SL 0.078 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.698 0.672 + 0.013*SL 0.685 + 0.010*SL 0.698 + 0.009*SL
tPHL 0.519 0.492 + 0.014*SL 0.505 + 0.010*SL 0.520 + 0.009*SL
E to Y tR 0.125 0.089 + 0.018*SL 0.090 + 0.018*SL 0.079 + 0.019*SL
tF 0.108 0.074 + 0.017*SL 0.079 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.802 0.776 + 0.013*SL 0.789 + 0.010*SL 0.801 + 0.009*SL
tPHL 0.584 0.557 + 0.014*SL 0.570 + 0.010*SL 0.585 + 0.009*SL
F to Y tR 0.126 0.090 + 0.018*SL 0.092 + 0.018*SL 0.080 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.080 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.837 0.811 + 0.013*SL 0.824 + 0.010*SL 0.837 + 0.009*SL
tPHL 0.580 0.553 + 0.014*SL 0.566 + 0.010*SL 0.582 + 0.009*SL
G to Y tR 0.125 0.089 + 0.018*SL 0.091 + 0.018*SL 0.079 + 0.019*SL
tF 0.112 0.077 + 0.017*SL 0.083 + 0.016*SL 0.080 + 0.016*SL
tPLH 0.868 0.842 + 0.013*SL 0.855 + 0.010*SL 0.868 + 0.009*SL
tPHL 0.634 0.606 + 0.014*SL 0.620 + 0.010*SL 0.636 + 0.009*SL
H to Y tR 0.126 0.090 + 0.018*SL 0.091 + 0.018*SL 0.080 + 0.019*SL
tF 0.112 0.077 + 0.017*SL 0.084 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.902 0.876 + 0.013*SL 0.889 + 0.010*SL 0.902 + 0.009*SL
tPHL 0.630 0.602 + 0.014*SL 0.616 + 0.010*SL 0.632 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-117 STDM110
AO2222/AO2222D2/AO2222D4
Four 2-ANDs into 4-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO2222D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.093 + 0.009*SL
tF 0.091 0.073 + 0.009*SL 0.077 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.520 0.504 + 0.008*SL 0.513 + 0.006*SL 0.534 + 0.005*SL
tPHL 0.424 0.408 + 0.008*SL 0.417 + 0.006*SL 0.437 + 0.005*SL
B to Y tR 0.116 0.096 + 0.010*SL 0.100 + 0.009*SL 0.094 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.079 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.554 0.538 + 0.008*SL 0.548 + 0.006*SL 0.569 + 0.005*SL
tPHL 0.418 0.402 + 0.008*SL 0.412 + 0.006*SL 0.432 + 0.005*SL
C to Y tR 0.116 0.096 + 0.010*SL 0.101 + 0.009*SL 0.095 + 0.009*SL
tF 0.092 0.072 + 0.010*SL 0.080 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.718 0.702 + 0.008*SL 0.712 + 0.006*SL 0.734 + 0.005*SL
tPHL 0.533 0.517 + 0.008*SL 0.526 + 0.006*SL 0.546 + 0.005*SL
D to Y tR 0.118 0.098 + 0.010*SL 0.102 + 0.009*SL 0.096 + 0.009*SL
tF 0.091 0.073 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.754 0.738 + 0.008*SL 0.747 + 0.006*SL 0.769 + 0.005*SL
tPHL 0.527 0.511 + 0.008*SL 0.520 + 0.006*SL 0.540 + 0.005*SL
E to Y tR 0.117 0.098 + 0.010*SL 0.102 + 0.009*SL 0.095 + 0.009*SL
tF 0.095 0.075 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.858 0.842 + 0.008*SL 0.851 + 0.006*SL 0.873 + 0.005*SL
tPHL 0.592 0.576 + 0.008*SL 0.585 + 0.006*SL 0.606 + 0.005*SL
F to Y tR 0.118 0.098 + 0.010*SL 0.102 + 0.009*SL 0.096 + 0.009*SL
tF 0.094 0.075 + 0.010*SL 0.080 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.894 0.877 + 0.008*SL 0.887 + 0.006*SL 0.909 + 0.005*SL
tPHL 0.588 0.572 + 0.008*SL 0.581 + 0.006*SL 0.602 + 0.005*SL
G to Y tR 0.117 0.096 + 0.010*SL 0.102 + 0.009*SL 0.096 + 0.009*SL
tF 0.098 0.079 + 0.010*SL 0.087 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.924 0.908 + 0.008*SL 0.918 + 0.006*SL 0.939 + 0.005*SL
tPHL 0.643 0.627 + 0.008*SL 0.636 + 0.006*SL 0.657 + 0.005*SL
H to Y tR 0.118 0.098 + 0.010*SL 0.103 + 0.009*SL 0.096 + 0.009*SL
tF 0.099 0.079 + 0.010*SL 0.087 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.958 0.942 + 0.008*SL 0.952 + 0.006*SL 0.974 + 0.005*SL
tPHL 0.638 0.622 + 0.008*SL 0.632 + 0.006*SL 0.653 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-118 Samsung ASIC
AO31DH/AO31/AO31D2/AO31D4
3-AND into 2-NOR with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO31DH AO31 AO31D2 AO31D4
ABCDABCDABCDABCD
0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.9 2.1 2.2 1.9 1.0 1.0 1.0 1.0
Gate Count
AO31DH AO31 AO31D2 AO31D4
1.67 1.67 2.67 3.33
Y
D
A
B
C
Truth Table
ABCDY
111x0
xxx10
Other States 1
Samsung ASIC 3-119 STDM110
AO31DH/AO31/AO31D2/AO31D4
3-AND into 2-NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO31DH
AO31
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.594 0.263 + 0.166*SL 0.244 + 0.170*SL 0.245 + 0.170*SL
tF 0.512 0.220 + 0.146*SL 0.204 + 0.150*SL 0.200 + 0.150*SL
tPLH 0.309 0.155 + 0.077*SL 0.156 + 0.077*SL 0.158 + 0.076*SL
tPHL 0.301 0.158 + 0.072*SL 0.159 + 0.071*SL 0.160 + 0.071*SL
B to Y tR 0.635 0.296 + 0.169*SL 0.280 + 0.173*SL 0.281 + 0.173*SL
tF 0.510 0.217 + 0.147*SL 0.206 + 0.149*SL 0.201 + 0.150*SL
tPLH 0.336 0.180 + 0.078*SL 0.181 + 0.078*SL 0.182 + 0.078*SL
tPHL 0.308 0.164 + 0.072*SL 0.166 + 0.071*SL 0.167 + 0.071*SL
C to Y tR 0.664 0.329 + 0.168*SL 0.312 + 0.172*SL 0.313 + 0.172*SL
tF 0.507 0.212 + 0.148*SL 0.204 + 0.150*SL 0.201 + 0.150*SL
tPLH 0.355 0.199 + 0.078*SL 0.201 + 0.077*SL 0.202 + 0.077*SL
tPHL 0.309 0.165 + 0.072*SL 0.167 + 0.072*SL 0.169 + 0.071*SL
D to Y tR 0.663 0.324 + 0.170*SL 0.317 + 0.172*SL 0.315 + 0.172*SL
tF 0.291 0.170 + 0.060*SL 0.159 + 0.063*SL 0.146 + 0.065*SL
tPLH 0.412 0.255 + 0.079*SL 0.259 + 0.078*SL 0.261 + 0.077*SL
tPHL 0.228 0.160 + 0.034*SL 0.162 + 0.034*SL 0.164 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.369 0.221 + 0.074*SL 0.210 + 0.076*SL 0.198 + 0.078*SL
tF 0.333 0.193 + 0.070*SL 0.183 + 0.072*SL 0.172 + 0.074*SL
tPLH 0.204 0.134 + 0.035*SL 0.133 + 0.035*SL 0.134 + 0.035*SL
tPHL 0.211 0.140 + 0.036*SL 0.141 + 0.035*SL 0.141 + 0.035*SL
B to Y tR 0.397 0.248 + 0.075*SL 0.238 + 0.077*SL 0.226 + 0.079*SL
tF 0.330 0.187 + 0.071*SL 0.181 + 0.073*SL 0.174 + 0.074*SL
tPLH 0.225 0.155 + 0.035*SL 0.154 + 0.035*SL 0.155 + 0.035*SL
tPHL 0.217 0.145 + 0.036*SL 0.147 + 0.036*SL 0.148 + 0.035*SL
C to Y tR 0.427 0.278 + 0.074*SL 0.267 + 0.077*SL 0.255 + 0.079*SL
tF 0.325 0.181 + 0.072*SL 0.177 + 0.073*SL 0.172 + 0.074*SL
tPLH 0.242 0.171 + 0.036*SL 0.172 + 0.036*SL 0.173 + 0.035*SL
tPHL 0.217 0.145 + 0.036*SL 0.147 + 0.036*SL 0.148 + 0.035*SL
D to Y tR 0.419 0.266 + 0.077*SL 0.261 + 0.078*SL 0.255 + 0.079*SL
tF 0.230 0.165 + 0.033*SL 0.161 + 0.034*SL 0.154 + 0.035*SL
tPLH 0.285 0.213 + 0.036*SL 0.215 + 0.036*SL 0.217 + 0.036*SL
tPHL 0.196 0.159 + 0.019*SL 0.160 + 0.019*SL 0.161 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-120 Samsung ASIC
AO31DH/AO31/AO31D2/AO31D4
3-AND into 2-NOR with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO31D2
AO31D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.278 0.206 + 0.036*SL 0.200 + 0.037*SL 0.185 + 0.039*SL
tF 0.248 0.180 + 0.034*SL 0.174 + 0.036*SL 0.160 + 0.037*SL
tPLH 0.158 0.122 + 0.018*SL 0.124 + 0.018*SL 0.124 + 0.018*SL
tPHL 0.164 0.128 + 0.018*SL 0.130 + 0.018*SL 0.130 + 0.018*SL
B to Y tR 0.304 0.231 + 0.036*SL 0.226 + 0.038*SL 0.212 + 0.039*SL
tF 0.242 0.172 + 0.035*SL 0.168 + 0.036*SL 0.159 + 0.037*SL
tPLH 0.180 0.145 + 0.017*SL 0.144 + 0.018*SL 0.145 + 0.018*SL
tPHL 0.170 0.133 + 0.019*SL 0.136 + 0.018*SL 0.138 + 0.018*SL
C to Y tR 0.333 0.261 + 0.036*SL 0.255 + 0.037*SL 0.241 + 0.039*SL
tF 0.237 0.166 + 0.035*SL 0.162 + 0.036*SL 0.156 + 0.037*SL
tPLH 0.197 0.161 + 0.018*SL 0.161 + 0.018*SL 0.163 + 0.018*SL
tPHL 0.170 0.133 + 0.019*SL 0.136 + 0.018*SL 0.138 + 0.018*SL
D to Y tR 0.324 0.249 + 0.037*SL 0.246 + 0.038*SL 0.238 + 0.039*SL
tF 0.209 0.178 + 0.015*SL 0.175 + 0.016*SL 0.164 + 0.017*SL
tPLH 0.245 0.208 + 0.018*SL 0.210 + 0.018*SL 0.213 + 0.018*SL
tPHL 0.176 0.156 + 0.010*SL 0.157 + 0.009*SL 0.159 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.099 0.079 + 0.010*SL 0.083 + 0.009*SL 0.075 + 0.009*SL
tF 0.089 0.071 + 0.009*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.394 0.380 + 0.007*SL 0.387 + 0.005*SL 0.403 + 0.004*SL
tPHL 0.403 0.388 + 0.007*SL 0.396 + 0.005*SL 0.416 + 0.004*SL
B to Y tR 0.100 0.082 + 0.009*SL 0.082 + 0.009*SL 0.075 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.077 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.419 0.405 + 0.007*SL 0.413 + 0.005*SL 0.429 + 0.004*SL
tPHL 0.410 0.394 + 0.008*SL 0.403 + 0.005*SL 0.422 + 0.004*SL
C to Y tR 0.100 0.083 + 0.009*SL 0.082 + 0.009*SL 0.076 + 0.009*SL
tF 0.088 0.069 + 0.010*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.440 0.426 + 0.007*SL 0.434 + 0.005*SL 0.450 + 0.004*SL
tPHL 0.409 0.394 + 0.008*SL 0.402 + 0.005*SL 0.421 + 0.004*SL
D to Y tR 0.099 0.078 + 0.010*SL 0.084 + 0.009*SL 0.075 + 0.009*SL
tF 0.085 0.067 + 0.009*SL 0.072 + 0.008*SL 0.072 + 0.008*SL
tPLH 0.483 0.469 + 0.007*SL 0.477 + 0.005*SL 0.492 + 0.004*SL
tPHL 0.376 0.361 + 0.007*SL 0.370 + 0.005*SL 0.388 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-121 STDM110
AO311/AO311D2/AO311D4
3-AND into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO311 AO311D2 AO311D4
ABCDEABCDEABCDE
0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9
Gate Count
AO311 AO311D2 AO311D4
2.00 3.00 3.33
Y
D
E
A
B
C
Truth Table
ABCDEY
111xx0
xxx1x0
xxxx10
Other States 1
STDM110 3-122 Samsung ASIC
AO311/AO311D2/AO311D4
3-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO311
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.576 0.349 + 0.113*SL 0.339 + 0.116*SL 0.329 + 0.117*SL
tF 0.412 0.235 + 0.088*SL 0.226 + 0.091*SL 0.217 + 0.092*SL
tPLH 0.257 0.153 + 0.052*SL 0.150 + 0.053*SL 0.152 + 0.053*SL
tPHL 0.257 0.169 + 0.044*SL 0.170 + 0.044*SL 0.171 + 0.044*SL
B to Y tR 0.611 0.383 + 0.114*SL 0.373 + 0.116*SL 0.365 + 0.118*SL
tF 0.411 0.232 + 0.089*SL 0.227 + 0.091*SL 0.218 + 0.092*SL
tPLH 0.283 0.178 + 0.053*SL 0.177 + 0.053*SL 0.178 + 0.053*SL
tPHL 0.264 0.175 + 0.044*SL 0.177 + 0.044*SL 0.179 + 0.044*SL
C to Y tR 0.647 0.420 + 0.114*SL 0.409 + 0.116*SL 0.401 + 0.118*SL
tF 0.408 0.228 + 0.090*SL 0.224 + 0.091*SL 0.218 + 0.092*SL
tPLH 0.305 0.198 + 0.053*SL 0.200 + 0.053*SL 0.201 + 0.053*SL
tPHL 0.264 0.175 + 0.045*SL 0.177 + 0.044*SL 0.179 + 0.044*SL
D to Y tR 0.659 0.430 + 0.114*SL 0.425 + 0.116*SL 0.421 + 0.116*SL
tF 0.322 0.222 + 0.050*SL 0.217 + 0.051*SL 0.210 + 0.052*SL
tPLH 0.406 0.299 + 0.054*SL 0.302 + 0.053*SL 0.304 + 0.053*SL
tPHL 0.269 0.214 + 0.028*SL 0.216 + 0.027*SL 0.218 + 0.027*SL
E to Y tR 0.659 0.429 + 0.115*SL 0.424 + 0.116*SL 0.421 + 0.116*SL
tF 0.356 0.256 + 0.050*SL 0.251 + 0.051*SL 0.245 + 0.052*SL
tPLH 0.420 0.312 + 0.054*SL 0.315 + 0.053*SL 0.317 + 0.053*SL
tPHL 0.288 0.232 + 0.028*SL 0.235 + 0.027*SL 0.238 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-123 STDM110
AO311/AO311D2/AO311D4
3-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO311D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.118 0.082 + 0.018*SL 0.083 + 0.018*SL 0.072 + 0.019*SL
tF 0.105 0.071 + 0.017*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.431 0.406 + 0.012*SL 0.417 + 0.010*SL 0.428 + 0.009*SL
tPHL 0.439 0.414 + 0.013*SL 0.426 + 0.010*SL 0.440 + 0.009*SL
B to Y tR 0.118 0.082 + 0.018*SL 0.083 + 0.018*SL 0.073 + 0.019*SL
tF 0.106 0.073 + 0.016*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.460 0.436 + 0.012*SL 0.447 + 0.010*SL 0.457 + 0.009*SL
tPHL 0.446 0.421 + 0.013*SL 0.433 + 0.010*SL 0.447 + 0.009*SL
C to Y tR 0.119 0.084 + 0.017*SL 0.083 + 0.018*SL 0.074 + 0.019*SL
tF 0.106 0.073 + 0.016*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.485 0.461 + 0.012*SL 0.472 + 0.010*SL 0.483 + 0.009*SL
tPHL 0.446 0.420 + 0.013*SL 0.432 + 0.010*SL 0.446 + 0.009*SL
D to Y tR 0.119 0.083 + 0.018*SL 0.084 + 0.018*SL 0.073 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.072 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.585 0.560 + 0.012*SL 0.572 + 0.010*SL 0.582 + 0.009*SL
tPHL 0.452 0.426 + 0.013*SL 0.438 + 0.010*SL 0.451 + 0.009*SL
E to Y tR 0.120 0.084 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.599 0.574 + 0.012*SL 0.586 + 0.010*SL 0.596 + 0.009*SL
tPHL 0.476 0.451 + 0.013*SL 0.462 + 0.010*SL 0.476 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-124 Samsung ASIC
AO311/AO311D2/AO311D4
3-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO311D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.106 0.086 + 0.010*SL 0.090 + 0.009*SL 0.082 + 0.009*SL
tF 0.093 0.074 + 0.009*SL 0.079 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.468 0.453 + 0.008*SL 0.462 + 0.005*SL 0.480 + 0.004*SL
tPHL 0.459 0.443 + 0.008*SL 0.452 + 0.006*SL 0.472 + 0.005*SL
B to Y tR 0.107 0.086 + 0.010*SL 0.091 + 0.009*SL 0.083 + 0.009*SL
tF 0.091 0.073 + 0.009*SL 0.077 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.498 0.483 + 0.008*SL 0.492 + 0.005*SL 0.510 + 0.004*SL
tPHL 0.466 0.450 + 0.008*SL 0.459 + 0.006*SL 0.479 + 0.005*SL
C to Y tR 0.108 0.089 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.091 0.073 + 0.009*SL 0.077 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.524 0.509 + 0.008*SL 0.517 + 0.005*SL 0.536 + 0.004*SL
tPHL 0.466 0.450 + 0.008*SL 0.459 + 0.006*SL 0.479 + 0.005*SL
D to Y tR 0.108 0.088 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.086 0.067 + 0.009*SL 0.073 + 0.008*SL 0.072 + 0.008*SL
tPLH 0.624 0.609 + 0.008*SL 0.618 + 0.005*SL 0.636 + 0.004*SL
tPHL 0.462 0.447 + 0.008*SL 0.455 + 0.006*SL 0.474 + 0.005*SL
E to Y tR 0.107 0.087 + 0.010*SL 0.092 + 0.009*SL 0.084 + 0.009*SL
tF 0.086 0.067 + 0.010*SL 0.073 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.638 0.623 + 0.008*SL 0.632 + 0.005*SL 0.651 + 0.004*SL
tPHL 0.487 0.472 + 0.008*SL 0.481 + 0.006*SL 0.499 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-125 STDM110
AO3111/AO3111D2
3-AND into 4-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO3111 AO3111D2 AO3111 AO3111
D2
ABCDEFABCDEF
0.9 0.9 0.9 0.8 0.8 0.9 0.9 0.9 0.9 0.8 0.8 0.9 2.33 3.33
Y
D
E
A
B
C
F
Truth Table
ABCDEFY
111xxx0
xxx1xx0
xxxx1x0
xxxxx10
Other States 1
STDM110 3-126 Samsung ASIC
AO3111/AO3111D2
3-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO3111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.787 0.477 + 0.155*SL 0.468 + 0.157*SL 0.465 + 0.157*SL
tF 0.440 0.248 + 0.096*SL 0.239 + 0.098*SL 0.231 + 0.099*SL
tPLH 0.295 0.156 + 0.069*SL 0.150 + 0.071*SL 0.153 + 0.070*SL
tPHL 0.274 0.179 + 0.048*SL 0.180 + 0.047*SL 0.181 + 0.047*SL
B to Y tR 0.832 0.521 + 0.155*SL 0.512 + 0.157*SL 0.510 + 0.158*SL
tF 0.438 0.245 + 0.096*SL 0.239 + 0.098*SL 0.233 + 0.099*SL
tPLH 0.327 0.186 + 0.070*SL 0.184 + 0.071*SL 0.186 + 0.070*SL
tPHL 0.281 0.186 + 0.048*SL 0.187 + 0.047*SL 0.189 + 0.047*SL
C to Y tR 0.877 0.567 + 0.155*SL 0.557 + 0.157*SL 0.555 + 0.158*SL
tF 0.436 0.242 + 0.097*SL 0.238 + 0.098*SL 0.232 + 0.099*SL
tPLH 0.354 0.212 + 0.071*SL 0.212 + 0.071*SL 0.215 + 0.070*SL
tPHL 0.281 0.185 + 0.048*SL 0.187 + 0.047*SL 0.189 + 0.047*SL
D to Y tR 0.918 0.612 + 0.153*SL 0.607 + 0.154*SL 0.603 + 0.155*SL
tF 0.391 0.264 + 0.064*SL 0.259 + 0.065*SL 0.255 + 0.065*SL
tPLH 0.511 0.368 + 0.072*SL 0.371 + 0.071*SL 0.374 + 0.071*SL
tPHL 0.323 0.254 + 0.034*SL 0.256 + 0.034*SL 0.258 + 0.033*SL
E to Y tR 0.919 0.614 + 0.153*SL 0.607 + 0.154*SL 0.603 + 0.155*SL
tF 0.433 0.304 + 0.064*SL 0.302 + 0.065*SL 0.298 + 0.065*SL
tPLH 0.556 0.412 + 0.072*SL 0.416 + 0.071*SL 0.419 + 0.071*SL
tPHL 0.350 0.281 + 0.035*SL 0.284 + 0.034*SL 0.287 + 0.034*SL
F to Y tR 0.919 0.613 + 0.153*SL 0.607 + 0.154*SL 0.603 + 0.155*SL
tF 0.480 0.353 + 0.064*SL 0.350 + 0.064*SL 0.343 + 0.065*SL
tPLH 0.573 0.430 + 0.072*SL 0.433 + 0.071*SL 0.436 + 0.071*SL
tPHL 0.369 0.297 + 0.036*SL 0.302 + 0.035*SL 0.308 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-127 STDM110
AO3111/AO3111D2
3-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO3111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.123 0.087 + 0.018*SL 0.090 + 0.017*SL 0.078 + 0.018*SL
tF 0.105 0.072 + 0.017*SL 0.078 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.471 0.445 + 0.013*SL 0.457 + 0.010*SL 0.469 + 0.009*SL
tPHL 0.457 0.432 + 0.013*SL 0.444 + 0.010*SL 0.458 + 0.009*SL
B to Y tR 0.124 0.089 + 0.018*SL 0.090 + 0.018*SL 0.080 + 0.018*SL
tF 0.106 0.073 + 0.016*SL 0.078 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.507 0.482 + 0.013*SL 0.494 + 0.010*SL 0.506 + 0.009*SL
tPHL 0.465 0.439 + 0.013*SL 0.451 + 0.010*SL 0.465 + 0.009*SL
C to Y tR 0.127 0.092 + 0.018*SL 0.092 + 0.017*SL 0.081 + 0.018*SL
tF 0.106 0.073 + 0.016*SL 0.078 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.539 0.513 + 0.013*SL 0.526 + 0.010*SL 0.538 + 0.009*SL
tPHL 0.464 0.438 + 0.013*SL 0.450 + 0.010*SL 0.465 + 0.009*SL
D to Y tR 0.127 0.091 + 0.018*SL 0.093 + 0.017*SL 0.082 + 0.018*SL
tF 0.103 0.070 + 0.016*SL 0.075 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.695 0.669 + 0.013*SL 0.682 + 0.010*SL 0.694 + 0.009*SL
tPHL 0.510 0.485 + 0.013*SL 0.496 + 0.010*SL 0.510 + 0.009*SL
E to Y tR 0.127 0.092 + 0.018*SL 0.093 + 0.017*SL 0.081 + 0.018*SL
tF 0.103 0.069 + 0.017*SL 0.075 + 0.015*SL 0.072 + 0.016*SL
tPLH 0.739 0.714 + 0.013*SL 0.726 + 0.010*SL 0.738 + 0.009*SL
tPHL 0.543 0.518 + 0.013*SL 0.530 + 0.010*SL 0.543 + 0.009*SL
F to Y tR 0.127 0.092 + 0.018*SL 0.093 + 0.017*SL 0.082 + 0.018*SL
tF 0.105 0.072 + 0.016*SL 0.077 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.758 0.733 + 0.013*SL 0.745 + 0.010*SL 0.758 + 0.009*SL
tPHL 0.569 0.544 + 0.013*SL 0.555 + 0.010*SL 0.569 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-128 Samsung ASIC
AO32/AO32D2/AO32D4
3-AND and 2-AND into 2-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO32 AO32D2 AO32D4
ABCDEABCDEABCDE
1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1
Gate Count
AO32 AO32D2 AO32D4
2.00 3.00 3.67
Y
A
B
C
D
E
Truth Table
ABCDEY
111xx0
xxx110
Other States 1
Samsung ASIC 3-129 STDM110
AO32/AO32D2/AO32D4
3-AND and 2-AND into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO32
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.411 0.260 + 0.075*SL 0.252 + 0.077*SL 0.241 + 0.079*SL
tF 0.352 0.229 + 0.061*SL 0.221 + 0.063*SL 0.209 + 0.065*SL
tPLH 0.232 0.161 + 0.035*SL 0.161 + 0.036*SL 0.162 + 0.035*SL
tPHL 0.201 0.138 + 0.032*SL 0.138 + 0.032*SL 0.140 + 0.031*SL
B to Y tR 0.441 0.290 + 0.076*SL 0.283 + 0.077*SL 0.272 + 0.079*SL
tF 0.348 0.222 + 0.063*SL 0.217 + 0.064*SL 0.210 + 0.065*SL
tPLH 0.255 0.184 + 0.036*SL 0.184 + 0.035*SL 0.185 + 0.035*SL
tPHL 0.207 0.143 + 0.032*SL 0.145 + 0.032*SL 0.147 + 0.032*SL
C to Y tR 0.474 0.322 + 0.076*SL 0.315 + 0.078*SL 0.305 + 0.079*SL
tF 0.343 0.216 + 0.063*SL 0.211 + 0.065*SL 0.208 + 0.065*SL
tPLH 0.276 0.204 + 0.036*SL 0.205 + 0.036*SL 0.206 + 0.035*SL
tPHL 0.207 0.142 + 0.032*SL 0.145 + 0.032*SL 0.147 + 0.032*SL
D to Y tR 0.441 0.287 + 0.077*SL 0.281 + 0.078*SL 0.278 + 0.079*SL
tF 0.305 0.220 + 0.043*SL 0.216 + 0.044*SL 0.208 + 0.045*SL
tPLH 0.315 0.242 + 0.037*SL 0.245 + 0.036*SL 0.247 + 0.036*SL
tPHL 0.232 0.186 + 0.023*SL 0.188 + 0.023*SL 0.190 + 0.022*SL
E to Y tR 0.472 0.318 + 0.077*SL 0.313 + 0.078*SL 0.309 + 0.079*SL
tF 0.299 0.212 + 0.044*SL 0.209 + 0.044*SL 0.205 + 0.045*SL
tPLH 0.340 0.267 + 0.036*SL 0.269 + 0.036*SL 0.271 + 0.036*SL
tPHL 0.227 0.181 + 0.023*SL 0.183 + 0.023*SL 0.185 + 0.022*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-130 Samsung ASIC
AO32/AO32D2/AO32D4
3-AND and 2-AND into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO32D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.110 0.074 + 0.018*SL 0.075 + 0.018*SL 0.064 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.397 0.373 + 0.012*SL 0.383 + 0.009*SL 0.393 + 0.009*SL
tPHL 0.393 0.367 + 0.013*SL 0.380 + 0.010*SL 0.394 + 0.009*SL
B to Y tR 0.112 0.077 + 0.018*SL 0.075 + 0.018*SL 0.066 + 0.019*SL
tF 0.105 0.072 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.425 0.401 + 0.012*SL 0.411 + 0.009*SL 0.420 + 0.009*SL
tPHL 0.399 0.373 + 0.013*SL 0.386 + 0.010*SL 0.400 + 0.009*SL
C to Y tR 0.112 0.076 + 0.018*SL 0.077 + 0.018*SL 0.067 + 0.019*SL
tF 0.104 0.071 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.449 0.425 + 0.012*SL 0.436 + 0.009*SL 0.445 + 0.009*SL
tPHL 0.401 0.374 + 0.013*SL 0.387 + 0.010*SL 0.401 + 0.009*SL
D to Y tR 0.112 0.077 + 0.018*SL 0.076 + 0.018*SL 0.067 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.073 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.485 0.461 + 0.012*SL 0.471 + 0.009*SL 0.481 + 0.009*SL
tPHL 0.425 0.399 + 0.013*SL 0.411 + 0.010*SL 0.425 + 0.009*SL
E to Y tR 0.112 0.077 + 0.018*SL 0.078 + 0.018*SL 0.066 + 0.019*SL
tF 0.103 0.070 + 0.017*SL 0.074 + 0.016*SL 0.069 + 0.016*SL
tPLH 0.514 0.490 + 0.012*SL 0.500 + 0.009*SL 0.510 + 0.009*SL
tPHL 0.421 0.395 + 0.013*SL 0.407 + 0.010*SL 0.420 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-131 STDM110
AO32/AO32D2/AO32D4
3-AND and 2-AND into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO32D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.099 0.079 + 0.010*SL 0.083 + 0.009*SL 0.076 + 0.009*SL
tF 0.090 0.071 + 0.009*SL 0.077 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.424 0.409 + 0.007*SL 0.418 + 0.005*SL 0.434 + 0.004*SL
tPHL 0.406 0.390 + 0.008*SL 0.399 + 0.006*SL 0.419 + 0.005*SL
B to Y tR 0.100 0.079 + 0.010*SL 0.085 + 0.009*SL 0.076 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.078 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.452 0.437 + 0.007*SL 0.445 + 0.005*SL 0.462 + 0.004*SL
tPHL 0.412 0.396 + 0.008*SL 0.405 + 0.006*SL 0.425 + 0.005*SL
C to Y tR 0.101 0.082 + 0.010*SL 0.085 + 0.009*SL 0.077 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.477 0.462 + 0.007*SL 0.470 + 0.005*SL 0.487 + 0.004*SL
tPHL 0.413 0.397 + 0.008*SL 0.406 + 0.006*SL 0.426 + 0.005*SL
D to Y tR 0.100 0.080 + 0.010*SL 0.085 + 0.009*SL 0.076 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.513 0.498 + 0.007*SL 0.507 + 0.005*SL 0.523 + 0.004*SL
tPHL 0.433 0.418 + 0.008*SL 0.427 + 0.006*SL 0.447 + 0.005*SL
E to Y tR 0.101 0.083 + 0.009*SL 0.083 + 0.009*SL 0.078 + 0.009*SL
tF 0.089 0.070 + 0.010*SL 0.077 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.542 0.528 + 0.007*SL 0.536 + 0.005*SL 0.552 + 0.004*SL
tPHL 0.429 0.414 + 0.008*SL 0.423 + 0.006*SL 0.442 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-132 Samsung ASIC
AO321/AO321D2/AO321D4
3-AND and 2-AND into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO321 AO321D2 AO321D4
ABCDEFABCDEFABCDEF
1.0 1.0 1.0 0.9 0.9 0.9 1.0 1.0 1.0 0.9 0.9 0.9 1.0 1.0 1.0 0.9 0.9 0.9
Gate Count
AO321 AO321D2 AO321D4
2.67 3.33 4.00
A
B
C
D
EY
F
Truth Table
ABCDEFY
111xxx0
xxx11x0
xxxxx10
Other States 1
Samsung ASIC 3-133 STDM110
AO321/AO321D2/AO321D4
3-AND and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO321
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.651 0.415 + 0.118*SL 0.408 + 0.119*SL 0.401 + 0.120*SL
tF 0.420 0.264 + 0.078*SL 0.255 + 0.080*SL 0.246 + 0.081*SL
tPLH 0.283 0.177 + 0.053*SL 0.174 + 0.054*SL 0.175 + 0.054*SL
tPHL 0.244 0.165 + 0.040*SL 0.166 + 0.039*SL 0.169 + 0.039*SL
B to Y tR 0.690 0.455 + 0.118*SL 0.447 + 0.120*SL 0.441 + 0.120*SL
tF 0.418 0.261 + 0.079*SL 0.255 + 0.080*SL 0.247 + 0.081*SL
tPLH 0.312 0.205 + 0.054*SL 0.204 + 0.054*SL 0.206 + 0.054*SL
tPHL 0.252 0.172 + 0.040*SL 0.174 + 0.039*SL 0.177 + 0.039*SL
C to Y tR 0.731 0.496 + 0.117*SL 0.488 + 0.119*SL 0.481 + 0.120*SL
tF 0.415 0.255 + 0.080*SL 0.252 + 0.080*SL 0.246 + 0.081*SL
tPLH 0.337 0.229 + 0.054*SL 0.229 + 0.054*SL 0.231 + 0.054*SL
tPHL 0.251 0.171 + 0.040*SL 0.173 + 0.039*SL 0.176 + 0.039*SL
D to Y tR 0.721 0.489 + 0.116*SL 0.484 + 0.117*SL 0.480 + 0.118*SL
tF 0.419 0.296 + 0.062*SL 0.292 + 0.063*SL 0.286 + 0.063*SL
tPLH 0.450 0.340 + 0.055*SL 0.343 + 0.054*SL 0.347 + 0.054*SL
tPHL 0.315 0.251 + 0.032*SL 0.253 + 0.031*SL 0.256 + 0.031*SL
E to Y tR 0.759 0.525 + 0.117*SL 0.521 + 0.118*SL 0.517 + 0.118*SL
tF 0.418 0.293 + 0.062*SL 0.291 + 0.063*SL 0.287 + 0.063*SL
tPLH 0.478 0.368 + 0.055*SL 0.371 + 0.054*SL 0.373 + 0.054*SL
tPHL 0.310 0.246 + 0.032*SL 0.249 + 0.031*SL 0.252 + 0.031*SL
F to Y tR 0.759 0.525 + 0.117*SL 0.521 + 0.118*SL 0.517 + 0.118*SL
tF 0.364 0.286 + 0.039*SL 0.282 + 0.040*SL 0.274 + 0.041*SL
tPLH 0.517 0.407 + 0.055*SL 0.410 + 0.054*SL 0.413 + 0.054*SL
tPHL 0.254 0.206 + 0.024*SL 0.210 + 0.023*SL 0.216 + 0.022*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-134 Samsung ASIC
AO321/AO321D2/AO321D4
3-AND and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO321D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.117 0.081 + 0.018*SL 0.081 + 0.018*SL 0.071 + 0.019*SL
tF 0.107 0.072 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.460 0.434 + 0.013*SL 0.447 + 0.010*SL 0.457 + 0.009*SL
tPHL 0.444 0.417 + 0.014*SL 0.430 + 0.010*SL 0.445 + 0.009*SL
B to Y tR 0.119 0.083 + 0.018*SL 0.084 + 0.018*SL 0.072 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.494 0.469 + 0.013*SL 0.481 + 0.010*SL 0.492 + 0.009*SL
tPHL 0.451 0.424 + 0.014*SL 0.437 + 0.010*SL 0.451 + 0.009*SL
C to Y tR 0.119 0.083 + 0.018*SL 0.083 + 0.018*SL 0.073 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.525 0.499 + 0.013*SL 0.511 + 0.010*SL 0.523 + 0.009*SL
tPHL 0.451 0.424 + 0.014*SL 0.437 + 0.010*SL 0.451 + 0.009*SL
D to Y tR 0.119 0.083 + 0.018*SL 0.084 + 0.018*SL 0.073 + 0.019*SL
tF 0.104 0.070 + 0.017*SL 0.074 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.631 0.605 + 0.013*SL 0.617 + 0.010*SL 0.629 + 0.009*SL
tPHL 0.514 0.487 + 0.013*SL 0.500 + 0.010*SL 0.514 + 0.009*SL
E to Y tR 0.119 0.083 + 0.018*SL 0.083 + 0.018*SL 0.074 + 0.019*SL
tF 0.105 0.071 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.663 0.637 + 0.013*SL 0.650 + 0.010*SL 0.661 + 0.009*SL
tPHL 0.510 0.483 + 0.013*SL 0.495 + 0.010*SL 0.510 + 0.009*SL
F to Y tR 0.119 0.083 + 0.018*SL 0.084 + 0.018*SL 0.074 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.073 + 0.016*SL 0.069 + 0.016*SL
tPLH 0.702 0.676 + 0.013*SL 0.688 + 0.010*SL 0.699 + 0.009*SL
tPHL 0.461 0.434 + 0.013*SL 0.447 + 0.010*SL 0.461 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-135 STDM110
AO321/AO321D2/AO321D4
3-AND and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO321D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.108 0.089 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.080 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.503 0.487 + 0.008*SL 0.496 + 0.005*SL 0.515 + 0.004*SL
tPHL 0.456 0.441 + 0.008*SL 0.450 + 0.006*SL 0.470 + 0.005*SL
B to Y tR 0.109 0.088 + 0.010*SL 0.094 + 0.009*SL 0.086 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.538 0.523 + 0.008*SL 0.532 + 0.005*SL 0.551 + 0.004*SL
tPHL 0.463 0.448 + 0.008*SL 0.457 + 0.006*SL 0.477 + 0.005*SL
C to Y tR 0.110 0.090 + 0.010*SL 0.094 + 0.009*SL 0.087 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.569 0.554 + 0.008*SL 0.563 + 0.006*SL 0.582 + 0.004*SL
tPHL 0.463 0.448 + 0.008*SL 0.457 + 0.006*SL 0.477 + 0.005*SL
D to Y tR 0.109 0.089 + 0.010*SL 0.094 + 0.009*SL 0.086 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.675 0.660 + 0.008*SL 0.669 + 0.005*SL 0.688 + 0.004*SL
tPHL 0.523 0.507 + 0.008*SL 0.516 + 0.006*SL 0.535 + 0.005*SL
E to Y tR 0.109 0.089 + 0.010*SL 0.094 + 0.009*SL 0.087 + 0.009*SL
tF 0.090 0.071 + 0.010*SL 0.078 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.708 0.692 + 0.008*SL 0.702 + 0.006*SL 0.721 + 0.004*SL
tPHL 0.518 0.503 + 0.008*SL 0.512 + 0.006*SL 0.531 + 0.005*SL
F to Y tR 0.110 0.090 + 0.010*SL 0.094 + 0.009*SL 0.088 + 0.009*SL
tF 0.088 0.069 + 0.009*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.747 0.731 + 0.008*SL 0.740 + 0.006*SL 0.760 + 0.004*SL
tPHL 0.465 0.449 + 0.008*SL 0.458 + 0.006*SL 0.477 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-136 Samsung ASIC
AO322/AO322D2/AO322D4
3-AND and Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO322 AO322
ABCDEFG
1.0 1.0 1.0 1.0 1.1 1.0 1.0 2.67
AO322D2 AO322D2
ABCDEFG
1.0 1.0 1.0 1.0 1.2 1.0 1.0 3.67
AO322D4 AO322D4
ABCDEFG
1.0 1.0 1.0 1.0 1.2 1.0 1.0 4.33
A
B
C
D
EY
F
G
Truth Table
ABCDEFGY
111xxxx0
xxx11xx0
xxxxx110
Other States 1
Samsung ASIC 3-137 STDM110
AO322/AO322D2/AO322D4
3-AND and Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO322
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.711 0.476 + 0.118*SL 0.469 + 0.119*SL 0.465 + 0.120*SL
tF 0.435 0.298 + 0.068*SL 0.289 + 0.070*SL 0.279 + 0.072*SL
tPLH 0.332 0.224 + 0.054*SL 0.224 + 0.054*SL 0.226 + 0.054*SL
tPHL 0.235 0.164 + 0.036*SL 0.166 + 0.035*SL 0.170 + 0.035*SL
B to Y tR 0.755 0.519 + 0.118*SL 0.513 + 0.119*SL 0.509 + 0.120*SL
tF 0.432 0.293 + 0.069*SL 0.287 + 0.071*SL 0.280 + 0.072*SL
tPLH 0.363 0.255 + 0.054*SL 0.256 + 0.054*SL 0.257 + 0.054*SL
tPHL 0.241 0.169 + 0.036*SL 0.172 + 0.035*SL 0.176 + 0.035*SL
C to Y tR 0.798 0.563 + 0.118*SL 0.557 + 0.119*SL 0.553 + 0.120*SL
tF 0.427 0.287 + 0.070*SL 0.282 + 0.071*SL 0.280 + 0.072*SL
tPLH 0.391 0.283 + 0.054*SL 0.285 + 0.054*SL 0.286 + 0.053*SL
tPHL 0.240 0.168 + 0.036*SL 0.171 + 0.035*SL 0.176 + 0.035*SL
D to Y tR 0.784 0.552 + 0.116*SL 0.548 + 0.117*SL 0.545 + 0.118*SL
tF 0.421 0.319 + 0.051*SL 0.314 + 0.052*SL 0.305 + 0.053*SL
tPLH 0.499 0.389 + 0.055*SL 0.393 + 0.054*SL 0.396 + 0.054*SL
tPHL 0.274 0.219 + 0.028*SL 0.222 + 0.027*SL 0.226 + 0.027*SL
E to Y tR 0.825 0.592 + 0.117*SL 0.589 + 0.117*SL 0.586 + 0.118*SL
tF 0.417 0.314 + 0.052*SL 0.310 + 0.053*SL 0.306 + 0.053*SL
tPLH 0.533 0.425 + 0.054*SL 0.427 + 0.054*SL 0.429 + 0.053*SL
tPHL 0.271 0.215 + 0.028*SL 0.218 + 0.027*SL 0.223 + 0.027*SL
F to Y tR 0.788 0.555 + 0.117*SL 0.551 + 0.118*SL 0.548 + 0.118*SL
tF 0.487 0.385 + 0.051*SL 0.380 + 0.052*SL 0.373 + 0.053*SL
tPLH 0.548 0.438 + 0.055*SL 0.442 + 0.054*SL 0.445 + 0.054*SL
tPHL 0.307 0.249 + 0.029*SL 0.254 + 0.028*SL 0.260 + 0.027*SL
G to Y tR 0.825 0.592 + 0.116*SL 0.589 + 0.117*SL 0.586 + 0.118*SL
tF 0.484 0.380 + 0.052*SL 0.378 + 0.053*SL 0.373 + 0.053*SL
tPLH 0.578 0.469 + 0.054*SL 0.472 + 0.054*SL 0.474 + 0.053*SL
tPHL 0.303 0.244 + 0.029*SL 0.249 + 0.028*SL 0.256 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-138 Samsung ASIC
AO322/AO322D2/AO322D4
3-AND and Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO322D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.121 0.086 + 0.018*SL 0.086 + 0.018*SL 0.075 + 0.019*SL
tF 0.107 0.074 + 0.016*SL 0.079 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.519 0.494 + 0.013*SL 0.506 + 0.010*SL 0.517 + 0.009*SL
tPHL 0.445 0.419 + 0.013*SL 0.432 + 0.010*SL 0.447 + 0.009*SL
B to Y tR 0.123 0.087 + 0.018*SL 0.087 + 0.018*SL 0.076 + 0.019*SL
tF 0.106 0.073 + 0.017*SL 0.079 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.555 0.530 + 0.013*SL 0.542 + 0.010*SL 0.553 + 0.009*SL
tPHL 0.451 0.425 + 0.013*SL 0.437 + 0.010*SL 0.452 + 0.009*SL
C to Y tR 0.123 0.087 + 0.018*SL 0.087 + 0.018*SL 0.077 + 0.019*SL
tF 0.107 0.074 + 0.016*SL 0.079 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.588 0.562 + 0.013*SL 0.575 + 0.010*SL 0.586 + 0.009*SL
tPHL 0.450 0.424 + 0.013*SL 0.437 + 0.010*SL 0.452 + 0.009*SL
D to Y tR 0.123 0.087 + 0.018*SL 0.088 + 0.018*SL 0.076 + 0.019*SL
tF 0.105 0.073 + 0.016*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.696 0.670 + 0.013*SL 0.682 + 0.010*SL 0.694 + 0.009*SL
tPHL 0.489 0.463 + 0.013*SL 0.475 + 0.010*SL 0.490 + 0.009*SL
E to Y tR 0.123 0.087 + 0.018*SL 0.089 + 0.018*SL 0.077 + 0.019*SL
tF 0.105 0.073 + 0.016*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.732 0.706 + 0.013*SL 0.718 + 0.010*SL 0.730 + 0.009*SL
tPHL 0.485 0.459 + 0.013*SL 0.472 + 0.010*SL 0.486 + 0.009*SL
F to Y tR 0.123 0.087 + 0.018*SL 0.088 + 0.018*SL 0.076 + 0.019*SL
tF 0.107 0.075 + 0.016*SL 0.079 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.739 0.714 + 0.013*SL 0.726 + 0.010*SL 0.737 + 0.009*SL
tPHL 0.529 0.503 + 0.013*SL 0.515 + 0.010*SL 0.530 + 0.009*SL
G to Y tR 0.124 0.087 + 0.018*SL 0.089 + 0.018*SL 0.077 + 0.019*SL
tF 0.107 0.074 + 0.016*SL 0.079 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.774 0.748 + 0.013*SL 0.760 + 0.010*SL 0.772 + 0.009*SL
tPHL 0.524 0.498 + 0.013*SL 0.510 + 0.010*SL 0.526 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-139 STDM110
AO322/AO322D2/AO322D4
3-AND and Two 2-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO322D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.110 0.091 + 0.010*SL 0.094 + 0.009*SL 0.088 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.562 0.547 + 0.008*SL 0.556 + 0.005*SL 0.575 + 0.004*SL
tPHL 0.458 0.443 + 0.008*SL 0.452 + 0.006*SL 0.472 + 0.004*SL
B to Y tR 0.111 0.090 + 0.010*SL 0.096 + 0.009*SL 0.089 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.081 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.599 0.583 + 0.008*SL 0.592 + 0.006*SL 0.612 + 0.004*SL
tPHL 0.464 0.448 + 0.008*SL 0.457 + 0.006*SL 0.478 + 0.004*SL
C to Y tR 0.113 0.093 + 0.010*SL 0.097 + 0.009*SL 0.089 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.079 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.632 0.617 + 0.008*SL 0.626 + 0.006*SL 0.645 + 0.004*SL
tPHL 0.463 0.448 + 0.008*SL 0.457 + 0.006*SL 0.477 + 0.004*SL
D to Y tR 0.112 0.092 + 0.010*SL 0.097 + 0.009*SL 0.088 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.735 0.720 + 0.008*SL 0.729 + 0.006*SL 0.748 + 0.004*SL
tPHL 0.497 0.481 + 0.008*SL 0.490 + 0.006*SL 0.510 + 0.004*SL
E to Y tR 0.113 0.092 + 0.010*SL 0.097 + 0.009*SL 0.089 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.080 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.777 0.762 + 0.008*SL 0.771 + 0.006*SL 0.790 + 0.004*SL
tPHL 0.495 0.479 + 0.008*SL 0.488 + 0.006*SL 0.508 + 0.004*SL
F to Y tR 0.112 0.092 + 0.010*SL 0.096 + 0.009*SL 0.089 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.081 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.785 0.769 + 0.008*SL 0.778 + 0.006*SL 0.798 + 0.004*SL
tPHL 0.538 0.523 + 0.008*SL 0.532 + 0.006*SL 0.552 + 0.004*SL
G to Y tR 0.112 0.091 + 0.010*SL 0.097 + 0.009*SL 0.090 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.819 0.803 + 0.008*SL 0.813 + 0.006*SL 0.832 + 0.004*SL
tPHL 0.534 0.518 + 0.008*SL 0.527 + 0.006*SL 0.548 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-140 Samsung ASIC
AO33/AO33D2/AO33D4
Two 3-ANDs into 2-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
AO33 AO33D2 AO33D4
ABCDEFABCDEFABCDEF
1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.2
Gate Count
AO33 AO33D2 AO33D4
2.33 3.00 3.67
Y
A
B
C
D
E
F
Truth Table
ABCDEFY
111xxx0
xxx1110
Other States 1
Samsung ASIC 3-141 STDM110
AO33/AO33D2/AO33D4
Two 3-ANDs into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO33
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.452 0.300 + 0.076*SL 0.293 + 0.078*SL 0.282 + 0.079*SL
tF 0.376 0.267 + 0.054*SL 0.258 + 0.057*SL 0.246 + 0.058*SL
tPLH 0.261 0.188 + 0.036*SL 0.190 + 0.036*SL 0.192 + 0.036*SL
tPHL 0.187 0.129 + 0.029*SL 0.130 + 0.029*SL 0.131 + 0.029*SL
B to Y tR 0.485 0.333 + 0.076*SL 0.326 + 0.078*SL 0.317 + 0.079*SL
tF 0.371 0.259 + 0.056*SL 0.252 + 0.058*SL 0.245 + 0.059*SL
tPLH 0.289 0.216 + 0.036*SL 0.218 + 0.036*SL 0.220 + 0.036*SL
tPHL 0.195 0.136 + 0.029*SL 0.138 + 0.029*SL 0.140 + 0.029*SL
C to Y tR 0.521 0.368 + 0.076*SL 0.361 + 0.078*SL 0.354 + 0.079*SL
tF 0.365 0.251 + 0.057*SL 0.246 + 0.058*SL 0.241 + 0.059*SL
tPLH 0.312 0.239 + 0.036*SL 0.241 + 0.036*SL 0.243 + 0.036*SL
tPHL 0.194 0.135 + 0.030*SL 0.137 + 0.029*SL 0.139 + 0.029*SL
D to Y tR 0.451 0.297 + 0.077*SL 0.292 + 0.078*SL 0.288 + 0.079*SL
tF 0.403 0.288 + 0.057*SL 0.284 + 0.058*SL 0.277 + 0.059*SL
tPLH 0.327 0.253 + 0.037*SL 0.256 + 0.036*SL 0.259 + 0.036*SL
tPHL 0.280 0.221 + 0.030*SL 0.224 + 0.029*SL 0.226 + 0.029*SL
E to Y tR 0.486 0.331 + 0.077*SL 0.328 + 0.078*SL 0.324 + 0.079*SL
tF 0.401 0.286 + 0.058*SL 0.283 + 0.059*SL 0.279 + 0.059*SL
tPLH 0.356 0.283 + 0.036*SL 0.286 + 0.036*SL 0.288 + 0.036*SL
tPHL 0.290 0.230 + 0.030*SL 0.233 + 0.029*SL 0.236 + 0.029*SL
F to Y tR 0.522 0.366 + 0.078*SL 0.364 + 0.078*SL 0.360 + 0.079*SL
tF 0.399 0.282 + 0.058*SL 0.280 + 0.059*SL 0.277 + 0.059*SL
tPLH 0.380 0.307 + 0.037*SL 0.309 + 0.036*SL 0.312 + 0.036*SL
tPHL 0.289 0.230 + 0.030*SL 0.233 + 0.029*SL 0.235 + 0.029*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-142 Samsung ASIC
AO33/AO33D2/AO33D4
Two 3-ANDs into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO33D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.114 0.078 + 0.018*SL 0.077 + 0.018*SL 0.068 + 0.019*SL
tF 0.107 0.075 + 0.016*SL 0.079 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.444 0.419 + 0.012*SL 0.430 + 0.010*SL 0.439 + 0.009*SL
tPHL 0.406 0.380 + 0.013*SL 0.393 + 0.010*SL 0.408 + 0.009*SL
B to Y tR 0.114 0.077 + 0.018*SL 0.078 + 0.018*SL 0.067 + 0.019*SL
tF 0.107 0.074 + 0.016*SL 0.079 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.476 0.452 + 0.012*SL 0.462 + 0.010*SL 0.472 + 0.009*SL
tPHL 0.413 0.386 + 0.013*SL 0.399 + 0.010*SL 0.414 + 0.009*SL
C to Y tR 0.115 0.079 + 0.018*SL 0.077 + 0.018*SL 0.069 + 0.019*SL
tF 0.106 0.073 + 0.017*SL 0.079 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.502 0.478 + 0.012*SL 0.488 + 0.010*SL 0.498 + 0.009*SL
tPHL 0.414 0.388 + 0.013*SL 0.400 + 0.010*SL 0.415 + 0.009*SL
D to Y tR 0.114 0.078 + 0.018*SL 0.078 + 0.018*SL 0.067 + 0.019*SL
tF 0.106 0.073 + 0.017*SL 0.078 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.512 0.488 + 0.012*SL 0.498 + 0.010*SL 0.508 + 0.009*SL
tPHL 0.496 0.470 + 0.013*SL 0.482 + 0.010*SL 0.497 + 0.009*SL
E to Y tR 0.114 0.078 + 0.018*SL 0.076 + 0.018*SL 0.068 + 0.019*SL
tF 0.106 0.074 + 0.016*SL 0.078 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.542 0.518 + 0.012*SL 0.528 + 0.010*SL 0.538 + 0.009*SL
tPHL 0.505 0.479 + 0.013*SL 0.492 + 0.010*SL 0.507 + 0.009*SL
F to Y tR 0.116 0.079 + 0.018*SL 0.080 + 0.018*SL 0.068 + 0.019*SL
tF 0.106 0.074 + 0.016*SL 0.078 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.572 0.547 + 0.012*SL 0.558 + 0.010*SL 0.568 + 0.009*SL
tPHL 0.505 0.479 + 0.013*SL 0.491 + 0.010*SL 0.506 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-143 STDM110
AO33/AO33D2/AO33D4
Two 3-ANDs into 2-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO33D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.102 0.081 + 0.010*SL 0.088 + 0.009*SL 0.079 + 0.009*SL
tF 0.093 0.073 + 0.010*SL 0.081 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.473 0.458 + 0.007*SL 0.466 + 0.005*SL 0.483 + 0.004*SL
tPHL 0.409 0.394 + 0.008*SL 0.402 + 0.006*SL 0.423 + 0.005*SL
B to Y tR 0.103 0.083 + 0.010*SL 0.087 + 0.009*SL 0.081 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.079 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.505 0.491 + 0.007*SL 0.499 + 0.005*SL 0.516 + 0.004*SL
tPHL 0.415 0.400 + 0.008*SL 0.409 + 0.006*SL 0.429 + 0.005*SL
C to Y tR 0.104 0.084 + 0.010*SL 0.089 + 0.009*SL 0.080 + 0.009*SL
tF 0.093 0.076 + 0.009*SL 0.079 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.532 0.517 + 0.007*SL 0.525 + 0.005*SL 0.543 + 0.004*SL
tPHL 0.416 0.401 + 0.008*SL 0.410 + 0.006*SL 0.430 + 0.005*SL
D to Y tR 0.101 0.080 + 0.010*SL 0.086 + 0.009*SL 0.077 + 0.009*SL
tF 0.092 0.073 + 0.010*SL 0.081 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.541 0.526 + 0.007*SL 0.534 + 0.005*SL 0.551 + 0.004*SL
tPHL 0.493 0.477 + 0.008*SL 0.486 + 0.006*SL 0.506 + 0.005*SL
E to Y tR 0.104 0.083 + 0.010*SL 0.088 + 0.009*SL 0.079 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.078 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.571 0.556 + 0.007*SL 0.564 + 0.005*SL 0.582 + 0.004*SL
tPHL 0.501 0.486 + 0.008*SL 0.494 + 0.006*SL 0.514 + 0.005*SL
F to Y tR 0.105 0.086 + 0.009*SL 0.087 + 0.009*SL 0.082 + 0.009*SL
tF 0.093 0.075 + 0.009*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.603 0.588 + 0.007*SL 0.596 + 0.005*SL 0.614 + 0.004*SL
tPHL 0.501 0.486 + 0.008*SL 0.495 + 0.006*SL 0.515 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-144 Samsung ASIC
AO331/AO331D2/AO331D4
Two 3-ANDs into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO331 AO331
ABCDEFG
1.0 1.0 1.0 1.0 1.0 1.0 0.9 2.67
AO331D2 AO331D2
ABCDEFG
1.0 1.0 1.0 1.0 1.0 1.0 1.0 3.33
AO331D4 AO331D4
ABCDEFG
1.0 1.0 1.0 1.0 1.0 1.0 1.0 4.00
A
B
C
Y
G
D
E
F
Truth Table
ABCDEFGY
111xxxx0
xxx111x0
xxxxxx10
Other States 1
Samsung ASIC 3-145 STDM110
AO331/AO331D2/AO331D4
Two 3-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO331
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.710 0.474 + 0.118*SL 0.466 + 0.120*SL 0.461 + 0.120*SL
tF 0.449 0.307 + 0.071*SL 0.297 + 0.073*SL 0.285 + 0.075*SL
tPLH 0.321 0.213 + 0.054*SL 0.213 + 0.054*SL 0.216 + 0.054*SL
tPHL 0.233 0.160 + 0.037*SL 0.160 + 0.037*SL 0.162 + 0.036*SL
B to Y tR 0.751 0.515 + 0.118*SL 0.508 + 0.120*SL 0.504 + 0.120*SL
tF 0.446 0.302 + 0.072*SL 0.295 + 0.074*SL 0.287 + 0.075*SL
tPLH 0.353 0.245 + 0.054*SL 0.246 + 0.054*SL 0.248 + 0.054*SL
tPHL 0.240 0.166 + 0.037*SL 0.167 + 0.037*SL 0.170 + 0.036*SL
C to Y tR 0.792 0.557 + 0.118*SL 0.550 + 0.119*SL 0.545 + 0.120*SL
tF 0.442 0.296 + 0.073*SL 0.291 + 0.074*SL 0.285 + 0.075*SL
tPLH 0.380 0.272 + 0.054*SL 0.273 + 0.054*SL 0.276 + 0.054*SL
tPHL 0.239 0.165 + 0.037*SL 0.167 + 0.037*SL 0.169 + 0.036*SL
D to Y tR 0.738 0.506 + 0.116*SL 0.501 + 0.117*SL 0.497 + 0.118*SL
tF 0.512 0.364 + 0.074*SL 0.360 + 0.075*SL 0.356 + 0.075*SL
tPLH 0.465 0.354 + 0.055*SL 0.358 + 0.054*SL 0.362 + 0.054*SL
tPHL 0.358 0.283 + 0.037*SL 0.286 + 0.037*SL 0.289 + 0.036*SL
E to Y tR 0.782 0.548 + 0.117*SL 0.544 + 0.118*SL 0.541 + 0.118*SL
tF 0.512 0.364 + 0.074*SL 0.362 + 0.075*SL 0.357 + 0.075*SL
tPLH 0.499 0.389 + 0.055*SL 0.393 + 0.054*SL 0.396 + 0.054*SL
tPHL 0.366 0.291 + 0.037*SL 0.294 + 0.037*SL 0.297 + 0.036*SL
F to Y tR 0.823 0.589 + 0.117*SL 0.586 + 0.118*SL 0.582 + 0.118*SL
tF 0.511 0.362 + 0.075*SL 0.361 + 0.075*SL 0.357 + 0.075*SL
tPLH 0.529 0.419 + 0.055*SL 0.422 + 0.054*SL 0.425 + 0.054*SL
tPHL 0.366 0.291 + 0.037*SL 0.294 + 0.037*SL 0.297 + 0.036*SL
G to Y tR 0.823 0.590 + 0.116*SL 0.586 + 0.117*SL 0.582 + 0.118*SL
tF 0.360 0.288 + 0.036*SL 0.283 + 0.037*SL 0.275 + 0.038*SL
tPLH 0.573 0.463 + 0.055*SL 0.466 + 0.054*SL 0.469 + 0.054*SL
tPHL 0.241 0.196 + 0.023*SL 0.200 + 0.022*SL 0.205 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-146 Samsung ASIC
AO331/AO331D2/AO331D4
Two 3-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO331D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.122 0.086 + 0.018*SL 0.087 + 0.018*SL 0.076 + 0.019*SL
tF 0.110 0.075 + 0.017*SL 0.082 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.513 0.488 + 0.013*SL 0.500 + 0.010*SL 0.511 + 0.009*SL
tPHL 0.456 0.429 + 0.014*SL 0.441 + 0.010*SL 0.457 + 0.009*SL
B to Y tR 0.123 0.086 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.111 0.077 + 0.017*SL 0.081 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.550 0.524 + 0.013*SL 0.537 + 0.010*SL 0.548 + 0.009*SL
tPHL 0.463 0.436 + 0.014*SL 0.448 + 0.010*SL 0.464 + 0.009*SL
C to Y tR 0.124 0.089 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.082 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.581 0.555 + 0.013*SL 0.568 + 0.010*SL 0.579 + 0.009*SL
tPHL 0.462 0.435 + 0.013*SL 0.447 + 0.010*SL 0.463 + 0.009*SL
D to Y tR 0.123 0.087 + 0.018*SL 0.087 + 0.018*SL 0.076 + 0.019*SL
tF 0.109 0.074 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.655 0.629 + 0.013*SL 0.642 + 0.010*SL 0.653 + 0.009*SL
tPHL 0.574 0.547 + 0.013*SL 0.560 + 0.010*SL 0.575 + 0.009*SL
E to Y tR 0.124 0.087 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.110 0.075 + 0.017*SL 0.081 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.694 0.668 + 0.013*SL 0.681 + 0.010*SL 0.692 + 0.009*SL
tPHL 0.582 0.555 + 0.013*SL 0.568 + 0.010*SL 0.582 + 0.009*SL
F to Y tR 0.124 0.088 + 0.018*SL 0.088 + 0.018*SL 0.078 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.727 0.702 + 0.013*SL 0.714 + 0.010*SL 0.726 + 0.009*SL
tPHL 0.582 0.555 + 0.013*SL 0.568 + 0.010*SL 0.583 + 0.009*SL
G to Y tR 0.124 0.087 + 0.018*SL 0.089 + 0.018*SL 0.078 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.077 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.772 0.746 + 0.013*SL 0.759 + 0.010*SL 0.771 + 0.009*SL
tPHL 0.457 0.431 + 0.013*SL 0.443 + 0.010*SL 0.457 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-147 STDM110
AO331/AO331D2/AO331D4
Two 3-ANDs into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO331D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.111 0.091 + 0.010*SL 0.097 + 0.009*SL 0.089 + 0.009*SL
tF 0.095 0.076 + 0.009*SL 0.081 + 0.008*SL 0.083 + 0.008*SL
tPLH 0.558 0.543 + 0.008*SL 0.552 + 0.006*SL 0.571 + 0.004*SL
tPHL 0.467 0.451 + 0.008*SL 0.460 + 0.006*SL 0.481 + 0.005*SL
B to Y tR 0.113 0.093 + 0.010*SL 0.098 + 0.009*SL 0.089 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.082 + 0.008*SL 0.083 + 0.008*SL
tPLH 0.596 0.580 + 0.008*SL 0.589 + 0.006*SL 0.609 + 0.004*SL
tPHL 0.474 0.458 + 0.008*SL 0.467 + 0.006*SL 0.488 + 0.005*SL
C to Y tR 0.113 0.093 + 0.010*SL 0.098 + 0.009*SL 0.091 + 0.009*SL
tF 0.096 0.077 + 0.010*SL 0.084 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.627 0.612 + 0.008*SL 0.621 + 0.006*SL 0.641 + 0.004*SL
tPHL 0.473 0.457 + 0.008*SL 0.466 + 0.006*SL 0.487 + 0.005*SL
D to Y tR 0.111 0.092 + 0.010*SL 0.096 + 0.009*SL 0.089 + 0.009*SL
tF 0.095 0.075 + 0.010*SL 0.083 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.701 0.686 + 0.008*SL 0.695 + 0.006*SL 0.714 + 0.004*SL
tPHL 0.586 0.570 + 0.008*SL 0.579 + 0.006*SL 0.599 + 0.005*SL
E to Y tR 0.112 0.092 + 0.010*SL 0.097 + 0.009*SL 0.090 + 0.009*SL
tF 0.094 0.075 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.740 0.725 + 0.008*SL 0.734 + 0.006*SL 0.754 + 0.004*SL
tPHL 0.594 0.578 + 0.008*SL 0.587 + 0.006*SL 0.607 + 0.005*SL
F to Y tR 0.114 0.095 + 0.010*SL 0.098 + 0.009*SL 0.091 + 0.009*SL
tF 0.094 0.074 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.774 0.759 + 0.008*SL 0.768 + 0.006*SL 0.788 + 0.004*SL
tPHL 0.594 0.578 + 0.008*SL 0.587 + 0.006*SL 0.607 + 0.005*SL
G to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.091 + 0.009*SL
tF 0.089 0.070 + 0.010*SL 0.076 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.818 0.803 + 0.008*SL 0.812 + 0.006*SL 0.832 + 0.004*SL
tPHL 0.460 0.445 + 0.008*SL 0.453 + 0.006*SL 0.473 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-148 Samsung ASIC
AO332/AO332D2/AO332D4
Two 3-ANDs and 2-AND into 3-NOR with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
AO332 AO332
ABCDEFGH
1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 3.00
AO332D2 AO332D2
ABCDEFGH
1.0 1.1 1.1 1.0 1.1 1.1 1.1 1.1 4.00
AO332D4 AO332D4
ABCDEFGH
1.0 1.1 1.1 1.0 1.0 1.1 1.1 1.1 4.67
D
F
A
C
Y
G
H
E
B
Truth Table
ABCDEFGHY
111xxxxx0
xxx111xx0
xxxxxx110
Other States 1
Samsung ASIC 3-149 STDM110
AO332/AO332D2/AO332D4
Two 3-ANDs and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO332
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.737 0.500 + 0.119*SL 0.494 + 0.120*SL 0.490 + 0.121*SL
tF 0.468 0.343 + 0.063*SL 0.333 + 0.065*SL 0.322 + 0.067*SL
tPLH 0.340 0.232 + 0.054*SL 0.232 + 0.054*SL 0.234 + 0.054*SL
tPHL 0.226 0.160 + 0.033*SL 0.160 + 0.033*SL 0.163 + 0.033*SL
B to Y tR 0.784 0.546 + 0.119*SL 0.541 + 0.120*SL 0.537 + 0.121*SL
tF 0.465 0.336 + 0.064*SL 0.330 + 0.066*SL 0.323 + 0.067*SL
tPLH 0.375 0.267 + 0.054*SL 0.267 + 0.054*SL 0.269 + 0.054*SL
tPHL 0.232 0.165 + 0.034*SL 0.167 + 0.033*SL 0.171 + 0.033*SL
C to Y tR 0.832 0.594 + 0.119*SL 0.589 + 0.120*SL 0.586 + 0.121*SL
tF 0.461 0.330 + 0.065*SL 0.326 + 0.066*SL 0.321 + 0.067*SL
tPLH 0.406 0.298 + 0.054*SL 0.299 + 0.054*SL 0.301 + 0.054*SL
tPHL 0.231 0.164 + 0.034*SL 0.166 + 0.033*SL 0.170 + 0.033*SL
D to Y tR 0.819 0.585 + 0.117*SL 0.581 + 0.118*SL 0.578 + 0.118*SL
tF 0.546 0.416 + 0.065*SL 0.410 + 0.066*SL 0.403 + 0.067*SL
tPLH 0.523 0.412 + 0.055*SL 0.416 + 0.054*SL 0.420 + 0.054*SL
tPHL 0.329 0.261 + 0.034*SL 0.265 + 0.033*SL 0.268 + 0.032*SL
E to Y tR 0.865 0.630 + 0.117*SL 0.627 + 0.118*SL 0.625 + 0.118*SL
tF 0.545 0.414 + 0.065*SL 0.411 + 0.066*SL 0.406 + 0.067*SL
tPLH 0.560 0.451 + 0.055*SL 0.453 + 0.054*SL 0.456 + 0.054*SL
tPHL 0.337 0.269 + 0.034*SL 0.273 + 0.033*SL 0.277 + 0.033*SL
F to Y tR 0.910 0.675 + 0.117*SL 0.673 + 0.118*SL 0.670 + 0.118*SL
tF 0.544 0.412 + 0.066*SL 0.409 + 0.067*SL 0.405 + 0.067*SL
tPLH 0.593 0.484 + 0.055*SL 0.486 + 0.054*SL 0.489 + 0.054*SL
tPHL 0.337 0.269 + 0.034*SL 0.273 + 0.033*SL 0.277 + 0.033*SL
G to Y tR 0.863 0.629 + 0.117*SL 0.626 + 0.118*SL 0.623 + 0.118*SL
tF 0.444 0.361 + 0.042*SL 0.355 + 0.043*SL 0.348 + 0.044*SL
tPLH 0.623 0.512 + 0.055*SL 0.516 + 0.054*SL 0.520 + 0.054*SL
tPHL 0.263 0.213 + 0.025*SL 0.218 + 0.024*SL 0.224 + 0.023*SL
H to Y tR 0.910 0.676 + 0.117*SL 0.674 + 0.118*SL 0.670 + 0.118*SL
tF 0.439 0.354 + 0.043*SL 0.350 + 0.044*SL 0.347 + 0.044*SL
tPLH 0.660 0.551 + 0.055*SL 0.553 + 0.054*SL 0.556 + 0.054*SL
tPHL 0.258 0.208 + 0.025*SL 0.213 + 0.024*SL 0.220 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-150 Samsung ASIC
AO332/AO332D2/AO332D4
Two 3-ANDs and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO332D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.121 0.084 + 0.018*SL 0.084 + 0.018*SL 0.075 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.525 0.499 + 0.013*SL 0.512 + 0.010*SL 0.524 + 0.009*SL
tPHL 0.448 0.421 + 0.014*SL 0.434 + 0.010*SL 0.450 + 0.009*SL
B to Y tR 0.122 0.085 + 0.018*SL 0.086 + 0.018*SL 0.076 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.081 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.565 0.539 + 0.013*SL 0.552 + 0.010*SL 0.564 + 0.009*SL
tPHL 0.454 0.427 + 0.014*SL 0.440 + 0.010*SL 0.455 + 0.009*SL
C to Y tR 0.124 0.088 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.601 0.575 + 0.013*SL 0.588 + 0.010*SL 0.600 + 0.009*SL
tPHL 0.453 0.426 + 0.014*SL 0.439 + 0.010*SL 0.454 + 0.009*SL
D to Y tR 0.122 0.086 + 0.018*SL 0.088 + 0.018*SL 0.076 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.711 0.685 + 0.013*SL 0.698 + 0.010*SL 0.710 + 0.009*SL
tPHL 0.552 0.525 + 0.014*SL 0.538 + 0.010*SL 0.553 + 0.009*SL
E to Y tR 0.124 0.087 + 0.018*SL 0.089 + 0.018*SL 0.078 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.754 0.728 + 0.013*SL 0.741 + 0.010*SL 0.753 + 0.009*SL
tPHL 0.560 0.532 + 0.014*SL 0.546 + 0.010*SL 0.561 + 0.009*SL
F to Y tR 0.124 0.088 + 0.018*SL 0.090 + 0.018*SL 0.079 + 0.019*SL
tF 0.109 0.074 + 0.017*SL 0.081 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.791 0.765 + 0.013*SL 0.778 + 0.010*SL 0.790 + 0.009*SL
tPHL 0.560 0.533 + 0.014*SL 0.546 + 0.010*SL 0.561 + 0.009*SL
G to Y tR 0.124 0.087 + 0.018*SL 0.089 + 0.018*SL 0.078 + 0.019*SL
tF 0.107 0.073 + 0.017*SL 0.077 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.815 0.789 + 0.013*SL 0.802 + 0.010*SL 0.814 + 0.009*SL
tPHL 0.486 0.458 + 0.014*SL 0.471 + 0.010*SL 0.486 + 0.009*SL
H to Y tR 0.125 0.089 + 0.018*SL 0.090 + 0.018*SL 0.078 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.858 0.832 + 0.013*SL 0.845 + 0.010*SL 0.858 + 0.009*SL
tPHL 0.481 0.454 + 0.013*SL 0.467 + 0.010*SL 0.482 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-151 STDM110
AO332/AO332D2/AO332D4
Two 3-ANDs and 2-AND into 3-NOR with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO332D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.112 0.092 + 0.010*SL 0.096 + 0.009*SL 0.090 + 0.009*SL
tF 0.095 0.075 + 0.010*SL 0.084 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.566 0.550 + 0.008*SL 0.559 + 0.006*SL 0.579 + 0.004*SL
tPHL 0.455 0.439 + 0.008*SL 0.448 + 0.006*SL 0.469 + 0.005*SL
B to Y tR 0.113 0.093 + 0.010*SL 0.097 + 0.009*SL 0.091 + 0.009*SL
tF 0.095 0.076 + 0.009*SL 0.081 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.607 0.591 + 0.008*SL 0.601 + 0.006*SL 0.621 + 0.005*SL
tPHL 0.461 0.445 + 0.008*SL 0.454 + 0.006*SL 0.475 + 0.005*SL
C to Y tR 0.114 0.094 + 0.010*SL 0.098 + 0.009*SL 0.092 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.083 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.644 0.628 + 0.008*SL 0.637 + 0.006*SL 0.658 + 0.005*SL
tPHL 0.460 0.444 + 0.008*SL 0.453 + 0.006*SL 0.474 + 0.005*SL
D to Y tR 0.114 0.094 + 0.010*SL 0.098 + 0.009*SL 0.090 + 0.009*SL
tF 0.096 0.077 + 0.010*SL 0.084 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.754 0.738 + 0.008*SL 0.748 + 0.006*SL 0.768 + 0.005*SL
tPHL 0.558 0.542 + 0.008*SL 0.552 + 0.006*SL 0.572 + 0.005*SL
E to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.092 + 0.009*SL
tF 0.096 0.076 + 0.010*SL 0.084 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.797 0.781 + 0.008*SL 0.791 + 0.006*SL 0.811 + 0.005*SL
tPHL 0.566 0.550 + 0.008*SL 0.560 + 0.006*SL 0.580 + 0.005*SL
F to Y tR 0.116 0.096 + 0.010*SL 0.100 + 0.009*SL 0.093 + 0.009*SL
tF 0.095 0.077 + 0.009*SL 0.081 + 0.008*SL 0.083 + 0.008*SL
tPLH 0.835 0.819 + 0.008*SL 0.829 + 0.006*SL 0.849 + 0.005*SL
tPHL 0.567 0.551 + 0.008*SL 0.560 + 0.006*SL 0.581 + 0.005*SL
G to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.092 + 0.009*SL
tF 0.092 0.073 + 0.010*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.858 0.842 + 0.008*SL 0.852 + 0.006*SL 0.872 + 0.005*SL
tPHL 0.489 0.473 + 0.008*SL 0.482 + 0.006*SL 0.502 + 0.005*SL
H to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.093 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.902 0.886 + 0.008*SL 0.895 + 0.006*SL 0.916 + 0.005*SL
tPHL 0.484 0.468 + 0.008*SL 0.478 + 0.006*SL 0.498 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-152 Samsung ASIC
AO4111/AO4111D2
4-AND into 4-NOR with 1X/2X Drive
Logic SymbolCell Data
Cell Data Input Load (SL) Gate Count
AO4111 AO4111
ABCDEFG
0.9 0.9 0.9 0.9 0.8 0.8 0.9 2.67
AO4111D2 AO4111D2
ABCDEFG
0.9 0.9 0.9 0.9 0.8 0.8 0.9 3.33
D
F
A
C
Y
G
E
B
Truth Table
ABCDEFGY
1111xxx0
xxxx1xx0
xxxxx1x0
xxxxxx10
Other States 1
Samsung ASIC 3-153 STDM110
AO4111/AO4111D2
4-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO4111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.829 0.516 + 0.156*SL 0.510 + 0.158*SL 0.505 + 0.158*SL
tF 0.569 0.328 + 0.120*SL 0.320 + 0.122*SL 0.319 + 0.122*SL
tPLH 0.288 0.153 + 0.067*SL 0.139 + 0.071*SL 0.141 + 0.070*SL
tPHL 0.323 0.206 + 0.058*SL 0.208 + 0.058*SL 0.209 + 0.058*SL
B to Y tR 0.877 0.564 + 0.156*SL 0.557 + 0.158*SL 0.553 + 0.159*SL
tF 0.571 0.331 + 0.120*SL 0.324 + 0.122*SL 0.321 + 0.122*SL
tPLH 0.320 0.182 + 0.069*SL 0.174 + 0.071*SL 0.177 + 0.071*SL
tPHL 0.342 0.224 + 0.059*SL 0.226 + 0.058*SL 0.229 + 0.058*SL
C to Y tR 0.925 0.613 + 0.156*SL 0.604 + 0.158*SL 0.600 + 0.159*SL
tF 0.570 0.329 + 0.121*SL 0.323 + 0.122*SL 0.321 + 0.122*SL
tPLH 0.350 0.209 + 0.070*SL 0.207 + 0.071*SL 0.209 + 0.071*SL
tPHL 0.353 0.235 + 0.059*SL 0.238 + 0.058*SL 0.240 + 0.058*SL
D to Y tR 0.975 0.664 + 0.155*SL 0.653 + 0.158*SL 0.649 + 0.159*SL
tF 0.568 0.326 + 0.121*SL 0.322 + 0.122*SL 0.320 + 0.122*SL
tPLH 0.375 0.231 + 0.072*SL 0.233 + 0.071*SL 0.237 + 0.071*SL
tPHL 0.357 0.239 + 0.059*SL 0.242 + 0.058*SL 0.245 + 0.058*SL
E to Y tR 1.037 0.733 + 0.152*SL 0.726 + 0.154*SL 0.720 + 0.155*SL
tF 0.425 0.297 + 0.064*SL 0.294 + 0.065*SL 0.290 + 0.065*SL
tPLH 0.592 0.447 + 0.073*SL 0.452 + 0.071*SL 0.456 + 0.071*SL
tPHL 0.348 0.279 + 0.035*SL 0.282 + 0.034*SL 0.284 + 0.034*SL
F to Y tR 1.038 0.734 + 0.152*SL 0.727 + 0.154*SL 0.721 + 0.155*SL
tF 0.468 0.338 + 0.065*SL 0.337 + 0.065*SL 0.334 + 0.065*SL
tPLH 0.635 0.490 + 0.073*SL 0.495 + 0.071*SL 0.500 + 0.071*SL
tPHL 0.376 0.306 + 0.035*SL 0.309 + 0.034*SL 0.313 + 0.034*SL
G to Y tR 1.037 0.733 + 0.152*SL 0.726 + 0.154*SL 0.721 + 0.155*SL
tF 0.549 0.423 + 0.063*SL 0.417 + 0.065*SL 0.411 + 0.065*SL
tPLH 0.653 0.508 + 0.073*SL 0.513 + 0.071*SL 0.517 + 0.071*SL
tPHL 0.395 0.323 + 0.036*SL 0.328 + 0.035*SL 0.334 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-154 Samsung ASIC
AO4111/AO4111D2
4-AND into 4-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
AO4111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.123 0.086 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.081 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.468 0.442 + 0.013*SL 0.455 + 0.010*SL 0.468 + 0.009*SL
tPHL 0.516 0.489 + 0.014*SL 0.502 + 0.010*SL 0.517 + 0.009*SL
B to Y tR 0.124 0.087 + 0.018*SL 0.089 + 0.018*SL 0.078 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.081 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.506 0.480 + 0.013*SL 0.493 + 0.010*SL 0.506 + 0.009*SL
tPHL 0.534 0.506 + 0.014*SL 0.519 + 0.010*SL 0.535 + 0.009*SL
C to Y tR 0.126 0.091 + 0.018*SL 0.091 + 0.018*SL 0.080 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.541 0.514 + 0.013*SL 0.527 + 0.010*SL 0.540 + 0.009*SL
tPHL 0.545 0.517 + 0.014*SL 0.530 + 0.010*SL 0.546 + 0.009*SL
D to Y tR 0.127 0.090 + 0.018*SL 0.092 + 0.018*SL 0.082 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.570 0.543 + 0.013*SL 0.557 + 0.010*SL 0.570 + 0.009*SL
tPHL 0.549 0.521 + 0.014*SL 0.535 + 0.010*SL 0.550 + 0.009*SL
E to Y tR 0.128 0.092 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.784 0.757 + 0.013*SL 0.771 + 0.010*SL 0.785 + 0.009*SL
tPHL 0.548 0.521 + 0.013*SL 0.534 + 0.010*SL 0.548 + 0.009*SL
F to Y tR 0.127 0.091 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.106 0.071 + 0.018*SL 0.078 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.827 0.800 + 0.013*SL 0.814 + 0.010*SL 0.828 + 0.009*SL
tPHL 0.580 0.554 + 0.013*SL 0.566 + 0.010*SL 0.581 + 0.009*SL
G to Y tR 0.128 0.091 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.108 0.074 + 0.017*SL 0.078 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.846 0.819 + 0.013*SL 0.833 + 0.010*SL 0.847 + 0.009*SL
tPHL 0.605 0.578 + 0.014*SL 0.591 + 0.010*SL 0.606 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-155 STDM110
OA21DH/OA21/OA21D2/OA21D2B/OA21D4
2-OR into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA21DH
Input Load (SL)
OA21DH OA21 OA21D2 OA21D2B OA21D4
ABCABCABCABCABC
0.5 0.6 0.6 0.9 1.0 0.9 1.8 2.0 1.9 1.0 1.0 1.0 1.0 1.0 1.0
Gate Count
OA21DH OA21 OA21D2 OA21D2B OA21D4
1.33 1.33 2.33 2.33 3.00
Y
C
A
B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.565 0.236 + 0.164*SL 0.215 + 0.169*SL 0.212 + 0.170*SL
tF 0.326 0.146 + 0.090*SL 0.129 + 0.094*SL 0.113 + 0.096*SL
tPLH 0.306 0.152 + 0.077*SL 0.153 + 0.077*SL 0.154 + 0.076*SL
tPHL 0.219 0.125 + 0.047*SL 0.125 + 0.047*SL 0.126 + 0.047*SL
B to Y tR 0.560 0.227 + 0.167*SL 0.216 + 0.169*SL 0.212 + 0.170*SL
tF 0.355 0.175 + 0.090*SL 0.159 + 0.094*SL 0.144 + 0.096*SL
tPLH 0.319 0.164 + 0.077*SL 0.166 + 0.077*SL 0.168 + 0.076*SL
tPHL 0.240 0.145 + 0.047*SL 0.146 + 0.047*SL 0.147 + 0.047*SL
C to Y tR 0.331 0.173 + 0.079*SL 0.159 + 0.082*SL 0.142 + 0.085*SL
tF 0.344 0.157 + 0.094*SL 0.151 + 0.095*SL 0.144 + 0.096*SL
tPLH 0.222 0.146 + 0.038*SL 0.147 + 0.038*SL 0.148 + 0.038*SL
tPHL 0.238 0.142 + 0.048*SL 0.145 + 0.047*SL 0.146 + 0.047*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCY
00x1
xx01
Others States 0
STDM110 3-156 Samsung ASIC
OA21DH/OA21/OA21D2/OA21D2B/OA21D4
2-OR into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA21
OA21D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.341 0.198 + 0.071*SL 0.187 + 0.074*SL 0.172 + 0.076*SL
tF 0.298 0.167 + 0.066*SL 0.156 + 0.068*SL 0.143 + 0.070*SL
tPLH 0.197 0.128 + 0.035*SL 0.129 + 0.034*SL 0.129 + 0.034*SL
tPHL 0.201 0.132 + 0.034*SL 0.133 + 0.034*SL 0.134 + 0.034*SL
B to Y tR 0.331 0.184 + 0.074*SL 0.178 + 0.075*SL 0.170 + 0.076*SL
tF 0.342 0.210 + 0.066*SL 0.200 + 0.068*SL 0.189 + 0.070*SL
tPLH 0.205 0.135 + 0.035*SL 0.137 + 0.035*SL 0.138 + 0.034*SL
tPHL 0.232 0.163 + 0.035*SL 0.164 + 0.034*SL 0.166 + 0.034*SL
C to Y tR 0.218 0.151 + 0.034*SL 0.144 + 0.035*SL 0.133 + 0.037*SL
tF 0.333 0.197 + 0.068*SL 0.192 + 0.069*SL 0.185 + 0.070*SL
tPLH 0.154 0.117 + 0.019*SL 0.123 + 0.017*SL 0.123 + 0.017*SL
tPHL 0.251 0.181 + 0.035*SL 0.183 + 0.034*SL 0.185 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.239 0.169 + 0.035*SL 0.161 + 0.037*SL 0.143 + 0.039*SL
tF 0.190 0.134 + 0.028*SL 0.126 + 0.030*SL 0.109 + 0.032*SL
tPLH 0.145 0.106 + 0.019*SL 0.113 + 0.018*SL 0.113 + 0.018*SL
tPHL 0.138 0.103 + 0.018*SL 0.111 + 0.016*SL 0.112 + 0.016*SL
B to Y tR 0.227 0.154 + 0.036*SL 0.147 + 0.038*SL 0.137 + 0.039*SL
tF 0.230 0.173 + 0.028*SL 0.165 + 0.030*SL 0.150 + 0.032*SL
tPLH 0.155 0.116 + 0.019*SL 0.123 + 0.018*SL 0.124 + 0.018*SL
tPHL 0.170 0.137 + 0.016*SL 0.140 + 0.016*SL 0.142 + 0.016*SL
C to Y tR 0.171 0.139 + 0.016*SL 0.133 + 0.018*SL 0.120 + 0.019*SL
tF 0.215 0.154 + 0.030*SL 0.151 + 0.031*SL 0.143 + 0.032*SL
tPLH 0.128 0.106 + 0.011*SL 0.114 + 0.009*SL 0.117 + 0.009*SL
tPHL 0.179 0.145 + 0.017*SL 0.148 + 0.016*SL 0.151 + 0.016*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-157 STDM110
OA21DH/OA21/OA21D2/OA21D2B/OA21D4
2-OR into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA21D2B
OA21D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.106 0.070 + 0.018*SL 0.070 + 0.018*SL 0.060 + 0.019*SL
tF 0.098 0.062 + 0.018*SL 0.068 + 0.016*SL 0.064 + 0.017*SL
tPLH 0.328 0.304 + 0.012*SL 0.315 + 0.009*SL 0.323 + 0.009*SL
tPHL 0.333 0.306 + 0.013*SL 0.318 + 0.010*SL 0.331 + 0.009*SL
B to Y tR 0.105 0.069 + 0.018*SL 0.067 + 0.018*SL 0.059 + 0.019*SL
tF 0.100 0.065 + 0.018*SL 0.070 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.337 0.313 + 0.012*SL 0.323 + 0.009*SL 0.331 + 0.009*SL
tPHL 0.370 0.343 + 0.013*SL 0.355 + 0.010*SL 0.368 + 0.009*SL
C to Y tR 0.104 0.067 + 0.019*SL 0.068 + 0.018*SL 0.058 + 0.019*SL
tF 0.100 0.065 + 0.018*SL 0.069 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.306 0.283 + 0.012*SL 0.292 + 0.009*SL 0.300 + 0.009*SL
tPHL 0.378 0.352 + 0.013*SL 0.364 + 0.010*SL 0.377 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.097 0.077 + 0.010*SL 0.081 + 0.009*SL 0.074 + 0.009*SL
tF 0.084 0.065 + 0.010*SL 0.072 + 0.008*SL 0.071 + 0.008*SL
tPLH 0.367 0.352 + 0.007*SL 0.360 + 0.005*SL 0.376 + 0.004*SL
tPHL 0.343 0.328 + 0.008*SL 0.337 + 0.005*SL 0.355 + 0.005*SL
B to Y tR 0.097 0.078 + 0.009*SL 0.080 + 0.009*SL 0.073 + 0.009*SL
tF 0.086 0.068 + 0.009*SL 0.072 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.376 0.362 + 0.007*SL 0.369 + 0.005*SL 0.386 + 0.004*SL
tPHL 0.380 0.365 + 0.008*SL 0.374 + 0.006*SL 0.393 + 0.005*SL
C to Y tR 0.095 0.075 + 0.010*SL 0.079 + 0.009*SL 0.072 + 0.009*SL
tF 0.086 0.067 + 0.010*SL 0.074 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.334 0.320 + 0.007*SL 0.327 + 0.005*SL 0.343 + 0.004*SL
tPHL 0.390 0.375 + 0.008*SL 0.384 + 0.005*SL 0.402 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-158 Samsung ASIC
OA211DH/OA211/OA211D2/OA211D2B/OA211D4
2-OR into 3-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA211DH
Input Load (SL)
OA211DH OA211 OA211D2 OA211D2B OA211D4
ABCDABCDABCDABCDABCD
0.6 0.6 0.6 0.6 1.0 1.0 1.0 1.0 2.1 2.0 2.2 2.0 1.0 1.1 1.1 1.1 1.0 1.1 1.1 1.1
Gate Count
OA211DH OA211 OA211D2 OA211D2B OA211D4
1.67 1.67 3.00 2.67 3.33
Y
C
A
B
D
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.580 0.251 + 0.165*SL 0.231 + 0.170*SL 0.229 + 0.170*SL
tF 0.403 0.183 + 0.110*SL 0.167 + 0.114*SL 0.155 + 0.115*SL
tPLH 0.315 0.161 + 0.077*SL 0.162 + 0.077*SL 0.163 + 0.076*SL
tPHL 0.242 0.132 + 0.055*SL 0.132 + 0.055*SL 0.132 + 0.055*SL
B to Y tR 0.577 0.243 + 0.167*SL 0.232 + 0.170*SL 0.229 + 0.170*SL
tF 0.441 0.220 + 0.110*SL 0.204 + 0.114*SL 0.193 + 0.116*SL
tPLH 0.328 0.173 + 0.077*SL 0.175 + 0.077*SL 0.178 + 0.076*SL
tPHL 0.268 0.156 + 0.056*SL 0.158 + 0.055*SL 0.159 + 0.055*SL
C to Y tR 0.357 0.188 + 0.084*SL 0.174 + 0.088*SL 0.161 + 0.090*SL
tF 0.436 0.210 + 0.113*SL 0.203 + 0.115*SL 0.196 + 0.116*SL
tPLH 0.240 0.160 + 0.040*SL 0.161 + 0.040*SL 0.162 + 0.040*SL
tPHL 0.288 0.175 + 0.056*SL 0.178 + 0.056*SL 0.180 + 0.055*SL
D to Y tR 0.382 0.212 + 0.085*SL 0.199 + 0.088*SL 0.186 + 0.090*SL
tF 0.433 0.206 + 0.114*SL 0.200 + 0.115*SL 0.195 + 0.116*SL
tPLH 0.254 0.173 + 0.041*SL 0.176 + 0.040*SL 0.177 + 0.040*SL
tPHL 0.290 0.177 + 0.056*SL 0.180 + 0.056*SL 0.182 + 0.055*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
00xx1
xx0x1
xxx01
Other States 0
Samsung ASIC 3-159 STDM110
OA211DH/OA211/OA211D2/OA211D2B/OA211D4
2-OR into 3-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA211
OA211D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.359 0.212 + 0.073*SL 0.201 + 0.076*SL 0.187 + 0.078*SL
tF 0.336 0.196 + 0.070*SL 0.186 + 0.072*SL 0.175 + 0.074*SL
tPLH 0.209 0.138 + 0.035*SL 0.139 + 0.035*SL 0.139 + 0.035*SL
tPHL 0.206 0.135 + 0.035*SL 0.135 + 0.035*SL 0.136 + 0.035*SL
B to Y tR 0.351 0.200 + 0.076*SL 0.193 + 0.077*SL 0.186 + 0.078*SL
tF 0.385 0.244 + 0.070*SL 0.234 + 0.073*SL 0.223 + 0.074*SL
tPLH 0.217 0.146 + 0.036*SL 0.147 + 0.035*SL 0.149 + 0.035*SL
tPHL 0.239 0.167 + 0.036*SL 0.168 + 0.036*SL 0.170 + 0.035*SL
C to Y tR 0.228 0.159 + 0.035*SL 0.152 + 0.037*SL 0.142 + 0.038*SL
tF 0.379 0.235 + 0.072*SL 0.231 + 0.073*SL 0.224 + 0.074*SL
tPLH 0.166 0.130 + 0.018*SL 0.133 + 0.017*SL 0.134 + 0.017*SL
tPHL 0.264 0.191 + 0.036*SL 0.194 + 0.036*SL 0.196 + 0.036*SL
D to Y tR 0.244 0.174 + 0.035*SL 0.168 + 0.037*SL 0.157 + 0.038*SL
tF 0.377 0.231 + 0.073*SL 0.228 + 0.074*SL 0.222 + 0.074*SL
tPLH 0.175 0.139 + 0.018*SL 0.141 + 0.018*SL 0.142 + 0.017*SL
tPHL 0.266 0.193 + 0.037*SL 0.195 + 0.036*SL 0.198 + 0.036*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.292 0.220 + 0.036*SL 0.214 + 0.037*SL 0.199 + 0.039*SL
tF 0.270 0.202 + 0.034*SL 0.196 + 0.035*SL 0.184 + 0.037*SL
tPLH 0.176 0.140 + 0.018*SL 0.142 + 0.018*SL 0.142 + 0.018*SL
tPHL 0.174 0.138 + 0.018*SL 0.138 + 0.018*SL 0.139 + 0.018*SL
B to Y tR 0.282 0.207 + 0.037*SL 0.204 + 0.038*SL 0.196 + 0.039*SL
tF 0.318 0.249 + 0.035*SL 0.244 + 0.036*SL 0.232 + 0.037*SL
tPLH 0.183 0.147 + 0.018*SL 0.149 + 0.018*SL 0.151 + 0.018*SL
tPHL 0.205 0.169 + 0.018*SL 0.170 + 0.018*SL 0.171 + 0.018*SL
C to Y tR 0.197 0.163 + 0.017*SL 0.158 + 0.018*SL 0.148 + 0.019*SL
tF 0.312 0.241 + 0.036*SL 0.238 + 0.036*SL 0.231 + 0.037*SL
tPLH 0.150 0.130 + 0.010*SL 0.134 + 0.009*SL 0.135 + 0.009*SL
tPHL 0.231 0.194 + 0.018*SL 0.196 + 0.018*SL 0.199 + 0.018*SL
D to Y tR 0.212 0.177 + 0.017*SL 0.174 + 0.018*SL 0.164 + 0.019*SL
tF 0.308 0.236 + 0.036*SL 0.234 + 0.036*SL 0.229 + 0.037*SL
tPLH 0.158 0.138 + 0.010*SL 0.141 + 0.009*SL 0.143 + 0.009*SL
tPHL 0.230 0.194 + 0.018*SL 0.195 + 0.018*SL 0.198 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-160 Samsung ASIC
OA211DH/OA211/OA211D2/OA211D2B/OA211D4
2-OR into 3-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA211D2B
OA211D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.110 0.073 + 0.018*SL 0.074 + 0.018*SL 0.063 + 0.019*SL
tF 0.104 0.071 + 0.016*SL 0.075 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.373 0.349 + 0.012*SL 0.359 + 0.010*SL 0.367 + 0.009*SL
tPHL 0.386 0.360 + 0.013*SL 0.372 + 0.010*SL 0.386 + 0.009*SL
B to Y tR 0.110 0.074 + 0.018*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.104 0.072 + 0.016*SL 0.075 + 0.015*SL 0.072 + 0.016*SL
tPLH 0.382 0.358 + 0.012*SL 0.368 + 0.010*SL 0.376 + 0.009*SL
tPHL 0.427 0.401 + 0.013*SL 0.413 + 0.010*SL 0.427 + 0.009*SL
C to Y tR 0.107 0.071 + 0.018*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.103 0.070 + 0.017*SL 0.075 + 0.016*SL 0.072 + 0.016*SL
tPLH 0.335 0.311 + 0.012*SL 0.321 + 0.009*SL 0.329 + 0.009*SL
tPHL 0.452 0.426 + 0.013*SL 0.438 + 0.010*SL 0.452 + 0.009*SL
D to Y tR 0.109 0.072 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.104 0.071 + 0.017*SL 0.075 + 0.015*SL 0.072 + 0.016*SL
tPLH 0.345 0.321 + 0.012*SL 0.331 + 0.009*SL 0.339 + 0.009*SL
tPHL 0.450 0.425 + 0.013*SL 0.437 + 0.010*SL 0.451 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.098 0.080 + 0.009*SL 0.080 + 0.009*SL 0.074 + 0.009*SL
tF 0.090 0.072 + 0.009*SL 0.076 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.401 0.387 + 0.007*SL 0.395 + 0.005*SL 0.410 + 0.004*SL
tPHL 0.401 0.386 + 0.008*SL 0.395 + 0.005*SL 0.414 + 0.004*SL
B to Y tR 0.098 0.077 + 0.010*SL 0.083 + 0.009*SL 0.074 + 0.009*SL
tF 0.090 0.073 + 0.009*SL 0.076 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.411 0.396 + 0.007*SL 0.404 + 0.005*SL 0.420 + 0.004*SL
tPHL 0.443 0.427 + 0.008*SL 0.436 + 0.006*SL 0.455 + 0.004*SL
C to Y tR 0.095 0.077 + 0.009*SL 0.077 + 0.009*SL 0.071 + 0.009*SL
tF 0.089 0.071 + 0.009*SL 0.076 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.352 0.338 + 0.007*SL 0.346 + 0.005*SL 0.361 + 0.004*SL
tPHL 0.468 0.452 + 0.008*SL 0.461 + 0.006*SL 0.480 + 0.004*SL
D to Y tR 0.095 0.075 + 0.010*SL 0.080 + 0.009*SL 0.071 + 0.009*SL
tF 0.089 0.071 + 0.009*SL 0.076 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.364 0.350 + 0.007*SL 0.357 + 0.005*SL 0.372 + 0.004*SL
tPHL 0.468 0.452 + 0.008*SL 0.461 + 0.006*SL 0.480 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-161 STDM110
OA2111/OA2111D2
2-OR into 4-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA2111 OA2111D2 OA2111 OA2111D2
ABCDEABCDE
1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 2.00 3.00
Y
C
D
A
B
E
Truth Table
ABCDEY
00xxx1
xx0xx1
xxx0x1
xxxx01
Other States 0
STDM110 3-162 Samsung ASIC
OA2111/OA2111D2
2-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA2111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.409 0.263 + 0.073*SL 0.255 + 0.075*SL 0.243 + 0.077*SL
tF 0.432 0.280 + 0.076*SL 0.273 + 0.078*SL 0.263 + 0.079*SL
tPLH 0.235 0.166 + 0.035*SL 0.166 + 0.035*SL 0.167 + 0.034*SL
tPHL 0.233 0.159 + 0.037*SL 0.158 + 0.037*SL 0.159 + 0.037*SL
B to Y tR 0.404 0.254 + 0.075*SL 0.250 + 0.076*SL 0.244 + 0.076*SL
tF 0.481 0.330 + 0.075*SL 0.322 + 0.077*SL 0.313 + 0.079*SL
tPLH 0.243 0.173 + 0.035*SL 0.174 + 0.035*SL 0.175 + 0.035*SL
tPHL 0.266 0.191 + 0.037*SL 0.192 + 0.037*SL 0.193 + 0.037*SL
C to Y tR 0.261 0.189 + 0.036*SL 0.183 + 0.037*SL 0.176 + 0.038*SL
tF 0.483 0.329 + 0.077*SL 0.326 + 0.077*SL 0.320 + 0.078*SL
tPLH 0.188 0.153 + 0.018*SL 0.154 + 0.018*SL 0.154 + 0.017*SL
tPHL 0.311 0.235 + 0.038*SL 0.237 + 0.038*SL 0.239 + 0.037*SL
D to Y tR 0.278 0.206 + 0.036*SL 0.201 + 0.037*SL 0.194 + 0.038*SL
tF 0.481 0.328 + 0.077*SL 0.324 + 0.078*SL 0.319 + 0.078*SL
tPLH 0.199 0.163 + 0.018*SL 0.164 + 0.018*SL 0.165 + 0.018*SL
tPHL 0.322 0.246 + 0.038*SL 0.248 + 0.038*SL 0.250 + 0.037*SL
E to Y tR 0.297 0.225 + 0.036*SL 0.220 + 0.037*SL 0.212 + 0.038*SL
tF 0.479 0.325 + 0.077*SL 0.321 + 0.078*SL 0.319 + 0.078*SL
tPLH 0.207 0.170 + 0.018*SL 0.172 + 0.018*SL 0.174 + 0.018*SL
tPHL 0.328 0.252 + 0.038*SL 0.254 + 0.038*SL 0.256 + 0.037*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-163 STDM110
OA2111/OA2111D2
2-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA2111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.115 0.078 + 0.018*SL 0.079 + 0.018*SL 0.068 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.414 0.390 + 0.012*SL 0.400 + 0.010*SL 0.409 + 0.009*SL
tPHL 0.436 0.409 + 0.013*SL 0.422 + 0.010*SL 0.436 + 0.009*SL
B to Y tR 0.114 0.079 + 0.018*SL 0.076 + 0.018*SL 0.069 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.082 + 0.015*SL 0.077 + 0.016*SL
tPLH 0.423 0.399 + 0.012*SL 0.409 + 0.010*SL 0.418 + 0.009*SL
tPHL 0.477 0.451 + 0.013*SL 0.463 + 0.010*SL 0.478 + 0.009*SL
C to Y tR 0.111 0.075 + 0.018*SL 0.075 + 0.018*SL 0.064 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.083 + 0.015*SL 0.077 + 0.016*SL
tPLH 0.364 0.341 + 0.012*SL 0.350 + 0.009*SL 0.358 + 0.009*SL
tPHL 0.519 0.493 + 0.013*SL 0.505 + 0.010*SL 0.520 + 0.009*SL
D to Y tR 0.112 0.076 + 0.018*SL 0.074 + 0.018*SL 0.066 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.082 + 0.015*SL 0.077 + 0.016*SL
tPLH 0.377 0.354 + 0.012*SL 0.363 + 0.009*SL 0.371 + 0.009*SL
tPHL 0.531 0.505 + 0.013*SL 0.517 + 0.010*SL 0.531 + 0.009*SL
E to Y tR 0.113 0.076 + 0.018*SL 0.076 + 0.018*SL 0.065 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.082 + 0.015*SL 0.077 + 0.016*SL
tPLH 0.388 0.364 + 0.012*SL 0.374 + 0.010*SL 0.382 + 0.009*SL
tPHL 0.538 0.512 + 0.013*SL 0.524 + 0.010*SL 0.539 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-164 Samsung ASIC
OA22DH/OA22/OA22D2/OA22D2B/OA22D4
Two 2-ORs into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA22DH
Input Load (SL)
OA22DH OA22 OA22D2 OA22D2B OA22D4
ABCDABCDABCDABCDABCD
0.5 0.6 0.5 0.6 0.9 0.9 0.9 0.9 1.9 1.8 1.9 1.8 0.9 1.0 1.1 0.9 0.9 1.0 1.1 0.9
Gate Count
OA22DH OA22 OA22D2 OA22D2B OA22D4
2.00 2.00 3.00 2.67 3.33
C
D
Y
A
B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.576 0.278 + 0.149*SL 0.252 + 0.155*SL 0.244 + 0.157*SL
tF 0.400 0.176 + 0.112*SL 0.160 + 0.116*SL 0.151 + 0.117*SL
tPLH 0.276 0.133 + 0.071*SL 0.134 + 0.071*SL 0.136 + 0.071*SL
tPHL 0.263 0.148 + 0.058*SL 0.151 + 0.057*SL 0.153 + 0.057*SL
B to Y tR 0.570 0.265 + 0.152*SL 0.252 + 0.156*SL 0.245 + 0.156*SL
tF 0.439 0.214 + 0.112*SL 0.200 + 0.116*SL 0.191 + 0.117*SL
tPLH 0.288 0.144 + 0.072*SL 0.146 + 0.071*SL 0.148 + 0.071*SL
tPHL 0.291 0.175 + 0.058*SL 0.179 + 0.057*SL 0.181 + 0.057*SL
C to Y tR 0.568 0.263 + 0.152*SL 0.247 + 0.156*SL 0.244 + 0.157*SL
tF 0.393 0.165 + 0.114*SL 0.156 + 0.116*SL 0.152 + 0.117*SL
tPLH 0.336 0.194 + 0.071*SL 0.196 + 0.071*SL 0.198 + 0.070*SL
tPHL 0.291 0.175 + 0.058*SL 0.180 + 0.057*SL 0.182 + 0.057*SL
D to Y tR 0.565 0.257 + 0.154*SL 0.248 + 0.156*SL 0.245 + 0.157*SL
tF 0.433 0.204 + 0.115*SL 0.196 + 0.116*SL 0.193 + 0.117*SL
tPLH 0.348 0.205 + 0.071*SL 0.208 + 0.071*SL 0.210 + 0.070*SL
tPHL 0.319 0.203 + 0.058*SL 0.208 + 0.057*SL 0.210 + 0.057*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
ABCDY
00xx1
xx001
Other States 0
Samsung ASIC 3-165 STDM110
OA22DH/OA22/OA22D2/OA22D2B/OA22D4
Two 2-ORs into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA22
OA22D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.391 0.248 + 0.071*SL 0.233 + 0.075*SL 0.214 + 0.078*SL
tF 0.327 0.180 + 0.074*SL 0.170 + 0.076*SL 0.159 + 0.078*SL
tPLH 0.184 0.112 + 0.036*SL 0.114 + 0.036*SL 0.114 + 0.036*SL
tPHL 0.233 0.156 + 0.039*SL 0.159 + 0.038*SL 0.161 + 0.038*SL
B to Y tR 0.379 0.231 + 0.074*SL 0.221 + 0.077*SL 0.212 + 0.078*SL
tF 0.375 0.227 + 0.074*SL 0.219 + 0.076*SL 0.208 + 0.078*SL
tPLH 0.194 0.120 + 0.037*SL 0.124 + 0.036*SL 0.125 + 0.036*SL
tPHL 0.269 0.192 + 0.039*SL 0.195 + 0.038*SL 0.197 + 0.038*SL
C to Y tR 0.357 0.210 + 0.074*SL 0.199 + 0.076*SL 0.186 + 0.078*SL
tF 0.321 0.170 + 0.075*SL 0.164 + 0.077*SL 0.158 + 0.078*SL
tPLH 0.223 0.152 + 0.036*SL 0.153 + 0.035*SL 0.154 + 0.035*SL
tPHL 0.253 0.175 + 0.039*SL 0.179 + 0.038*SL 0.182 + 0.038*SL
D to Y tR 0.349 0.197 + 0.076*SL 0.191 + 0.077*SL 0.185 + 0.078*SL
tF 0.369 0.217 + 0.076*SL 0.214 + 0.077*SL 0.208 + 0.078*SL
tPLH 0.233 0.161 + 0.036*SL 0.164 + 0.035*SL 0.165 + 0.035*SL
tPHL 0.291 0.213 + 0.039*SL 0.216 + 0.038*SL 0.219 + 0.038*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.343 0.275 + 0.034*SL 0.266 + 0.036*SL 0.247 + 0.038*SL
tF 0.279 0.206 + 0.036*SL 0.201 + 0.037*SL 0.189 + 0.039*SL
tPLH 0.159 0.122 + 0.018*SL 0.127 + 0.017*SL 0.127 + 0.017*SL
tPHL 0.212 0.173 + 0.019*SL 0.175 + 0.019*SL 0.178 + 0.019*SL
B to Y tR 0.329 0.258 + 0.036*SL 0.252 + 0.037*SL 0.241 + 0.038*SL
tF 0.331 0.256 + 0.037*SL 0.253 + 0.038*SL 0.242 + 0.039*SL
tPLH 0.167 0.131 + 0.018*SL 0.134 + 0.018*SL 0.135 + 0.017*SL
tPHL 0.251 0.211 + 0.020*SL 0.213 + 0.019*SL 0.216 + 0.019*SL
C to Y tR 0.305 0.235 + 0.035*SL 0.229 + 0.037*SL 0.214 + 0.038*SL
tF 0.279 0.202 + 0.039*SL 0.199 + 0.039*SL 0.192 + 0.040*SL
tPLH 0.197 0.162 + 0.018*SL 0.163 + 0.017*SL 0.164 + 0.017*SL
tPHL 0.237 0.196 + 0.020*SL 0.198 + 0.020*SL 0.202 + 0.019*SL
D to Y tR 0.295 0.222 + 0.037*SL 0.218 + 0.038*SL 0.211 + 0.038*SL
tF 0.325 0.248 + 0.038*SL 0.246 + 0.039*SL 0.241 + 0.039*SL
tPLH 0.205 0.170 + 0.018*SL 0.171 + 0.017*SL 0.173 + 0.017*SL
tPHL 0.270 0.230 + 0.020*SL 0.232 + 0.019*SL 0.235 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-166 Samsung ASIC
OA22DH/OA22/OA22D2/OA22D2B/OA22D4
Two 2-ORs into 2-NAND with 0.5X/1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA22D2B
OA22D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.113 0.078 + 0.018*SL 0.077 + 0.018*SL 0.067 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.016*SL 0.069 + 0.016*SL
tPLH 0.365 0.341 + 0.012*SL 0.351 + 0.009*SL 0.360 + 0.009*SL
tPHL 0.412 0.387 + 0.013*SL 0.398 + 0.010*SL 0.412 + 0.009*SL
B to Y tR 0.112 0.076 + 0.018*SL 0.077 + 0.018*SL 0.066 + 0.019*SL
tF 0.102 0.068 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.375 0.351 + 0.012*SL 0.361 + 0.010*SL 0.371 + 0.009*SL
tPHL 0.458 0.432 + 0.013*SL 0.444 + 0.010*SL 0.458 + 0.009*SL
C to Y tR 0.113 0.077 + 0.018*SL 0.075 + 0.018*SL 0.068 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.073 + 0.016*SL 0.069 + 0.016*SL
tPLH 0.400 0.376 + 0.012*SL 0.387 + 0.010*SL 0.396 + 0.009*SL
tPHL 0.426 0.400 + 0.013*SL 0.412 + 0.010*SL 0.426 + 0.009*SL
D to Y tR 0.113 0.077 + 0.018*SL 0.078 + 0.018*SL 0.068 + 0.019*SL
tF 0.103 0.069 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.409 0.384 + 0.012*SL 0.395 + 0.009*SL 0.404 + 0.009*SL
tPHL 0.471 0.445 + 0.013*SL 0.457 + 0.010*SL 0.471 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.101 0.080 + 0.010*SL 0.086 + 0.009*SL 0.077 + 0.009*SL
tF 0.089 0.071 + 0.009*SL 0.075 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.393 0.378 + 0.007*SL 0.386 + 0.005*SL 0.403 + 0.004*SL
tPHL 0.426 0.411 + 0.008*SL 0.420 + 0.006*SL 0.439 + 0.005*SL
B to Y tR 0.101 0.083 + 0.009*SL 0.083 + 0.009*SL 0.078 + 0.009*SL
tF 0.089 0.070 + 0.010*SL 0.077 + 0.008*SL 0.077 + 0.008*SL
tPLH 0.403 0.388 + 0.007*SL 0.396 + 0.005*SL 0.413 + 0.004*SL
tPHL 0.472 0.456 + 0.008*SL 0.465 + 0.006*SL 0.484 + 0.005*SL
C to Y tR 0.102 0.082 + 0.010*SL 0.086 + 0.009*SL 0.078 + 0.009*SL
tF 0.088 0.068 + 0.010*SL 0.075 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.429 0.414 + 0.007*SL 0.422 + 0.005*SL 0.439 + 0.004*SL
tPHL 0.441 0.426 + 0.008*SL 0.434 + 0.006*SL 0.454 + 0.005*SL
D to Y tR 0.102 0.083 + 0.010*SL 0.086 + 0.009*SL 0.078 + 0.009*SL
tF 0.089 0.070 + 0.010*SL 0.077 + 0.008*SL 0.076 + 0.008*SL
tPLH 0.437 0.422 + 0.007*SL 0.431 + 0.005*SL 0.447 + 0.004*SL
tPHL 0.485 0.470 + 0.008*SL 0.479 + 0.006*SL 0.498 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-167 STDM110
OA22DHA/OA22A/OA22D2A/OA22D4A
2-OR and 2-NAND into 2-NAND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA22DHA OA22A OA22D2A OA22D4A
ABCDABCDABCDABCD
0.5 0.5 0.5 0.5 1.0 1.0 0.6 0.6 2.0 1.9 0.6 0.6 1.0 1.0 0.6 0.6
Gate Count
OA22DHA OA22A OA22D2A OA22D4A
2.00 2.00 3.00 4.00
C
D
Y
A
B
Truth Table
ABCDY
00xx1
xx111
Other States 0
STDM110 3-168 Samsung ASIC
OA22DHA/OA22A/OA22D2A/OA22D4A
2-OR and 2-NAND into 2-NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA22DHA
OA22A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.521 0.194 + 0.164*SL 0.171 + 0.169*SL 0.167 + 0.170*SL
tF 0.294 0.122 + 0.086*SL 0.104 + 0.090*SL 0.087 + 0.093*SL
tPLH 0.289 0.135 + 0.077*SL 0.136 + 0.077*SL 0.137 + 0.076*SL
tPHL 0.201 0.109 + 0.046*SL 0.111 + 0.045*SL 0.112 + 0.045*SL
B to Y tR 0.516 0.184 + 0.166*SL 0.171 + 0.169*SL 0.167 + 0.170*SL
tF 0.325 0.153 + 0.086*SL 0.135 + 0.091*SL 0.117 + 0.093*SL
tPLH 0.299 0.145 + 0.077*SL 0.147 + 0.077*SL 0.149 + 0.076*SL
tPHL 0.221 0.129 + 0.046*SL 0.131 + 0.046*SL 0.132 + 0.045*SL
C to Y tR 0.309 0.146 + 0.082*SL 0.139 + 0.083*SL 0.132 + 0.084*SL
tF 0.307 0.124 + 0.092*SL 0.120 + 0.093*SL 0.117 + 0.093*SL
tPLH 0.342 0.263 + 0.039*SL 0.269 + 0.038*SL 0.271 + 0.038*SL
tPHL 0.343 0.249 + 0.047*SL 0.254 + 0.046*SL 0.256 + 0.046*SL
D to Y tR 0.309 0.146 + 0.082*SL 0.140 + 0.083*SL 0.132 + 0.084*SL
tF 0.308 0.125 + 0.091*SL 0.121 + 0.093*SL 0.118 + 0.093*SL
tPLH 0.339 0.260 + 0.039*SL 0.266 + 0.038*SL 0.268 + 0.038*SL
tPHL 0.359 0.265 + 0.047*SL 0.270 + 0.046*SL 0.272 + 0.046*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.314 0.173 + 0.071*SL 0.160 + 0.074*SL 0.143 + 0.076*SL
tF 0.257 0.138 + 0.060*SL 0.126 + 0.063*SL 0.112 + 0.065*SL
tPLH 0.183 0.113 + 0.035*SL 0.116 + 0.034*SL 0.116 + 0.034*SL
tPHL 0.178 0.113 + 0.032*SL 0.116 + 0.032*SL 0.117 + 0.032*SL
B to Y tR 0.303 0.157 + 0.073*SL 0.148 + 0.075*SL 0.141 + 0.076*SL
tF 0.300 0.178 + 0.061*SL 0.168 + 0.063*SL 0.155 + 0.065*SL
tPLH 0.191 0.120 + 0.035*SL 0.124 + 0.035*SL 0.125 + 0.034*SL
tPHL 0.208 0.143 + 0.032*SL 0.145 + 0.032*SL 0.147 + 0.032*SL
C to Y tR 0.194 0.122 + 0.036*SL 0.120 + 0.037*SL 0.115 + 0.038*SL
tF 0.285 0.157 + 0.064*SL 0.154 + 0.065*SL 0.151 + 0.065*SL
tPLH 0.270 0.231 + 0.019*SL 0.238 + 0.018*SL 0.242 + 0.017*SL
tPHL 0.353 0.286 + 0.033*SL 0.291 + 0.032*SL 0.294 + 0.032*SL
D to Y tR 0.194 0.122 + 0.036*SL 0.119 + 0.037*SL 0.115 + 0.038*SL
tF 0.286 0.158 + 0.064*SL 0.155 + 0.065*SL 0.152 + 0.065*SL
tPLH 0.266 0.227 + 0.020*SL 0.234 + 0.018*SL 0.239 + 0.017*SL
tPHL 0.371 0.304 + 0.033*SL 0.308 + 0.032*SL 0.311 + 0.032*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-169 STDM110
OA22DHA/OA22A/OA22D2A/OA22D4A
2-OR and 2-NAND into 2-NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA22D2A
OA22D4A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.245 0.177 + 0.034*SL 0.168 + 0.036*SL 0.151 + 0.038*SL
tF 0.199 0.142 + 0.029*SL 0.134 + 0.031*SL 0.119 + 0.032*SL
tPLH 0.147 0.110 + 0.019*SL 0.116 + 0.017*SL 0.116 + 0.017*SL
tPHL 0.145 0.110 + 0.018*SL 0.117 + 0.016*SL 0.117 + 0.016*SL
B to Y tR 0.232 0.161 + 0.036*SL 0.155 + 0.037*SL 0.145 + 0.038*SL
tF 0.242 0.182 + 0.030*SL 0.176 + 0.031*SL 0.162 + 0.032*SL
tPLH 0.156 0.118 + 0.019*SL 0.124 + 0.017*SL 0.126 + 0.017*SL
tPHL 0.177 0.144 + 0.016*SL 0.146 + 0.016*SL 0.148 + 0.016*SL
C to Y tR 0.180 0.141 + 0.019*SL 0.145 + 0.018*SL 0.142 + 0.018*SL
tF 0.236 0.173 + 0.031*SL 0.170 + 0.032*SL 0.165 + 0.033*SL
tPLH 0.313 0.289 + 0.012*SL 0.296 + 0.010*SL 0.308 + 0.009*SL
tPHL 0.376 0.340 + 0.018*SL 0.345 + 0.017*SL 0.351 + 0.016*SL
D to Y tR 0.180 0.142 + 0.019*SL 0.145 + 0.018*SL 0.142 + 0.018*SL
tF 0.237 0.174 + 0.031*SL 0.172 + 0.032*SL 0.166 + 0.032*SL
tPLH 0.311 0.287 + 0.012*SL 0.294 + 0.010*SL 0.306 + 0.009*SL
tPHL 0.393 0.358 + 0.018*SL 0.362 + 0.017*SL 0.369 + 0.016*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.075 + 0.010*SL 0.081 + 0.009*SL 0.072 + 0.009*SL
tF 0.087 0.069 + 0.009*SL 0.073 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.368 0.353 + 0.007*SL 0.361 + 0.005*SL 0.377 + 0.004*SL
tPHL 0.358 0.343 + 0.008*SL 0.352 + 0.006*SL 0.371 + 0.005*SL
B to Y tR 0.097 0.078 + 0.009*SL 0.079 + 0.009*SL 0.073 + 0.009*SL
tF 0.089 0.070 + 0.009*SL 0.075 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.376 0.362 + 0.007*SL 0.370 + 0.005*SL 0.385 + 0.004*SL
tPHL 0.396 0.380 + 0.008*SL 0.389 + 0.006*SL 0.408 + 0.005*SL
C to Y tR 0.094 0.074 + 0.010*SL 0.079 + 0.009*SL 0.070 + 0.009*SL
tF 0.087 0.069 + 0.009*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.456 0.442 + 0.007*SL 0.450 + 0.005*SL 0.464 + 0.004*SL
tPHL 0.542 0.527 + 0.008*SL 0.536 + 0.006*SL 0.555 + 0.005*SL
D to Y tR 0.094 0.074 + 0.010*SL 0.078 + 0.009*SL 0.070 + 0.009*SL
tF 0.087 0.068 + 0.009*SL 0.074 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.452 0.438 + 0.007*SL 0.446 + 0.005*SL 0.461 + 0.004*SL
tPHL 0.560 0.545 + 0.008*SL 0.553 + 0.006*SL 0.572 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-170 Samsung ASIC
OA221/OA221D2/OA221D4
Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA221 OA221D2 OA221D4
ABCDEABCDEABCDE
1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.0 1.2 1.0
Gate Count
OA221 OA221D2 OA221D4
2.00 3.00 3.67
C
D
Y
A
B
E
Truth Table
ABCDEY
00xxx1
xx00x1
xxxx01
Other States 0
Samsung ASIC 3-171 STDM110
OA221/OA221D2/OA221D4
Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA221
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.448 0.306 + 0.071*SL 0.294 + 0.074*SL 0.280 + 0.076*SL
tF 0.448 0.280 + 0.084*SL 0.272 + 0.086*SL 0.264 + 0.087*SL
tPLH 0.214 0.144 + 0.035*SL 0.144 + 0.035*SL 0.145 + 0.035*SL
tPHL 0.282 0.197 + 0.042*SL 0.199 + 0.042*SL 0.201 + 0.042*SL
B to Y tR 0.440 0.293 + 0.074*SL 0.286 + 0.075*SL 0.278 + 0.076*SL
tF 0.507 0.337 + 0.085*SL 0.330 + 0.087*SL 0.324 + 0.088*SL
tPLH 0.224 0.154 + 0.035*SL 0.154 + 0.035*SL 0.156 + 0.035*SL
tPHL 0.325 0.240 + 0.042*SL 0.242 + 0.042*SL 0.244 + 0.042*SL
C to Y tR 0.414 0.268 + 0.073*SL 0.260 + 0.075*SL 0.248 + 0.077*SL
tF 0.447 0.278 + 0.085*SL 0.273 + 0.086*SL 0.268 + 0.087*SL
tPLH 0.252 0.183 + 0.035*SL 0.183 + 0.035*SL 0.184 + 0.034*SL
tPHL 0.312 0.226 + 0.043*SL 0.230 + 0.042*SL 0.232 + 0.041*SL
D to Y tR 0.408 0.258 + 0.075*SL 0.254 + 0.076*SL 0.248 + 0.077*SL
tF 0.506 0.335 + 0.086*SL 0.331 + 0.087*SL 0.327 + 0.087*SL
tPLH 0.265 0.194 + 0.035*SL 0.196 + 0.035*SL 0.197 + 0.035*SL
tPHL 0.359 0.273 + 0.043*SL 0.276 + 0.042*SL 0.279 + 0.042*SL
E to Y tR 0.255 0.187 + 0.034*SL 0.179 + 0.036*SL 0.170 + 0.037*SL
tF 0.504 0.331 + 0.086*SL 0.328 + 0.087*SL 0.327 + 0.087*SL
tPLH 0.180 0.144 + 0.018*SL 0.146 + 0.017*SL 0.148 + 0.017*SL
tPHL 0.373 0.287 + 0.043*SL 0.290 + 0.042*SL 0.293 + 0.042*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-172 Samsung ASIC
OA221/OA221D2/OA221D4
Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA221D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.114 0.079 + 0.018*SL 0.077 + 0.018*SL 0.069 + 0.019*SL
tF 0.104 0.071 + 0.017*SL 0.077 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.403 0.378 + 0.012*SL 0.389 + 0.010*SL 0.399 + 0.009*SL
tPHL 0.474 0.448 + 0.013*SL 0.461 + 0.010*SL 0.475 + 0.009*SL
B to Y tR 0.115 0.079 + 0.018*SL 0.080 + 0.018*SL 0.068 + 0.019*SL
tF 0.106 0.073 + 0.016*SL 0.078 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.412 0.387 + 0.012*SL 0.398 + 0.010*SL 0.408 + 0.009*SL
tPHL 0.524 0.497 + 0.013*SL 0.510 + 0.010*SL 0.525 + 0.009*SL
C to Y tR 0.115 0.079 + 0.018*SL 0.078 + 0.018*SL 0.069 + 0.019*SL
tF 0.105 0.072 + 0.017*SL 0.077 + 0.015*SL 0.073 + 0.016*SL
tPLH 0.440 0.416 + 0.012*SL 0.426 + 0.010*SL 0.436 + 0.009*SL
tPHL 0.502 0.476 + 0.013*SL 0.488 + 0.010*SL 0.503 + 0.009*SL
D to Y tR 0.116 0.080 + 0.018*SL 0.080 + 0.018*SL 0.069 + 0.019*SL
tF 0.106 0.073 + 0.017*SL 0.078 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.452 0.428 + 0.012*SL 0.439 + 0.010*SL 0.449 + 0.009*SL
tPHL 0.557 0.531 + 0.013*SL 0.543 + 0.010*SL 0.558 + 0.009*SL
E to Y tR 0.111 0.075 + 0.018*SL 0.075 + 0.018*SL 0.064 + 0.019*SL
tF 0.106 0.073 + 0.016*SL 0.078 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.369 0.345 + 0.012*SL 0.355 + 0.010*SL 0.364 + 0.009*SL
tPHL 0.572 0.545 + 0.013*SL 0.558 + 0.010*SL 0.573 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-173 STDM110
OA221/OA221D2/OA221D4
Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA221D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.103 0.083 + 0.010*SL 0.088 + 0.009*SL 0.079 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.081 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.431 0.416 + 0.007*SL 0.425 + 0.005*SL 0.442 + 0.004*SL
tPHL 0.490 0.475 + 0.008*SL 0.484 + 0.006*SL 0.504 + 0.005*SL
B to Y tR 0.103 0.085 + 0.009*SL 0.086 + 0.009*SL 0.080 + 0.009*SL
tF 0.095 0.076 + 0.009*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.440 0.425 + 0.007*SL 0.434 + 0.005*SL 0.451 + 0.004*SL
tPHL 0.540 0.524 + 0.008*SL 0.533 + 0.006*SL 0.554 + 0.005*SL
C to Y tR 0.104 0.084 + 0.010*SL 0.089 + 0.009*SL 0.080 + 0.009*SL
tF 0.093 0.076 + 0.009*SL 0.079 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.469 0.455 + 0.007*SL 0.463 + 0.005*SL 0.481 + 0.004*SL
tPHL 0.523 0.507 + 0.008*SL 0.516 + 0.006*SL 0.537 + 0.005*SL
D to Y tR 0.104 0.086 + 0.009*SL 0.086 + 0.009*SL 0.081 + 0.009*SL
tF 0.094 0.075 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.482 0.467 + 0.007*SL 0.476 + 0.005*SL 0.493 + 0.004*SL
tPHL 0.572 0.556 + 0.008*SL 0.565 + 0.006*SL 0.586 + 0.005*SL
E to Y tR 0.098 0.078 + 0.010*SL 0.083 + 0.009*SL 0.074 + 0.009*SL
tF 0.093 0.075 + 0.009*SL 0.080 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.388 0.374 + 0.007*SL 0.382 + 0.005*SL 0.398 + 0.004*SL
tPHL 0.588 0.572 + 0.008*SL 0.581 + 0.006*SL 0.602 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-174 Samsung ASIC
OA222/OA222D2/OA222D2B/OA222D4
Three 2-ORs into 3-NAND with 1X/2X/2X(Buffered)/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA222 OA222D2 OA222 OA222D2
ABCDEFABCDEF
0.9 1.0 1.0 1.0 0.9 1.0 1.8 2.1 1.8 2.0 1.8 2.0 2.67 4.67
OA222D2B OA222D4 OA222D2B OA222D4
ABCDEFABCDEF
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.9 1.0 3.67 4.33
C
DY
A
B
E
F
Truth Table
ABCDEFY
00xxxx1
xx00xx1
xxxx001
Other States 0
Samsung ASIC 3-175 STDM110
OA222/OA222D2/OA222D2B/OA222D4
Three 2-ORs into 3-NAND with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA222
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.537 0.395 + 0.071*SL 0.382 + 0.074*SL 0.368 + 0.076*SL
tF 0.556 0.368 + 0.094*SL 0.362 + 0.095*SL 0.361 + 0.095*SL
tPLH 0.221 0.150 + 0.035*SL 0.150 + 0.035*SL 0.151 + 0.035*SL
tPHL 0.358 0.265 + 0.047*SL 0.268 + 0.046*SL 0.271 + 0.045*SL
B to Y tR 0.529 0.382 + 0.073*SL 0.375 + 0.075*SL 0.366 + 0.076*SL
tF 0.614 0.426 + 0.094*SL 0.421 + 0.095*SL 0.421 + 0.095*SL
tPLH 0.229 0.158 + 0.035*SL 0.158 + 0.036*SL 0.159 + 0.035*SL
tPHL 0.401 0.308 + 0.046*SL 0.311 + 0.046*SL 0.313 + 0.045*SL
C to Y tR 0.509 0.364 + 0.073*SL 0.356 + 0.075*SL 0.343 + 0.077*SL
tF 0.554 0.366 + 0.094*SL 0.363 + 0.095*SL 0.362 + 0.095*SL
tPLH 0.266 0.195 + 0.035*SL 0.196 + 0.035*SL 0.197 + 0.035*SL
tPHL 0.402 0.308 + 0.047*SL 0.312 + 0.046*SL 0.315 + 0.046*SL
D to Y tR 0.504 0.355 + 0.074*SL 0.350 + 0.076*SL 0.344 + 0.076*SL
tF 0.616 0.428 + 0.094*SL 0.426 + 0.095*SL 0.425 + 0.095*SL
tPLH 0.278 0.206 + 0.036*SL 0.208 + 0.035*SL 0.210 + 0.035*SL
tPHL 0.450 0.357 + 0.046*SL 0.360 + 0.046*SL 0.362 + 0.045*SL
E to Y tR 0.478 0.331 + 0.073*SL 0.324 + 0.075*SL 0.314 + 0.077*SL
tF 0.554 0.366 + 0.094*SL 0.364 + 0.095*SL 0.363 + 0.095*SL
tPLH 0.294 0.222 + 0.036*SL 0.225 + 0.035*SL 0.228 + 0.035*SL
tPHL 0.420 0.326 + 0.047*SL 0.330 + 0.046*SL 0.333 + 0.045*SL
F to Y tR 0.474 0.324 + 0.075*SL 0.321 + 0.076*SL 0.315 + 0.077*SL
tF 0.615 0.427 + 0.094*SL 0.425 + 0.095*SL 0.425 + 0.095*SL
tPLH 0.304 0.233 + 0.036*SL 0.236 + 0.035*SL 0.239 + 0.035*SL
tPHL 0.466 0.373 + 0.046*SL 0.376 + 0.046*SL 0.379 + 0.045*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-176 Samsung ASIC
OA222/OA222D2/OA222D2B/OA222D4
Three 2-ORs into 3-NAND with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA222D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.464 0.394 + 0.035*SL 0.388 + 0.036*SL 0.371 + 0.038*SL
tF 0.456 0.364 + 0.046*SL 0.360 + 0.047*SL 0.355 + 0.048*SL
tPLH 0.185 0.149 + 0.018*SL 0.149 + 0.018*SL 0.150 + 0.018*SL
tPHL 0.310 0.263 + 0.023*SL 0.265 + 0.023*SL 0.268 + 0.023*SL
B to Y tR 0.453 0.380 + 0.036*SL 0.376 + 0.037*SL 0.367 + 0.038*SL
tF 0.516 0.423 + 0.047*SL 0.420 + 0.047*SL 0.416 + 0.048*SL
tPLH 0.195 0.159 + 0.018*SL 0.160 + 0.018*SL 0.161 + 0.018*SL
tPHL 0.357 0.311 + 0.023*SL 0.312 + 0.023*SL 0.315 + 0.023*SL
C to Y tR 0.429 0.357 + 0.036*SL 0.352 + 0.037*SL 0.338 + 0.038*SL
tF 0.459 0.365 + 0.047*SL 0.364 + 0.047*SL 0.360 + 0.048*SL
tPLH 0.223 0.187 + 0.018*SL 0.188 + 0.018*SL 0.189 + 0.017*SL
tPHL 0.345 0.297 + 0.024*SL 0.299 + 0.023*SL 0.304 + 0.023*SL
D to Y tR 0.421 0.347 + 0.037*SL 0.344 + 0.038*SL 0.336 + 0.038*SL
tF 0.517 0.424 + 0.047*SL 0.422 + 0.047*SL 0.420 + 0.047*SL
tPLH 0.234 0.198 + 0.018*SL 0.199 + 0.018*SL 0.200 + 0.017*SL
tPHL 0.391 0.345 + 0.023*SL 0.346 + 0.023*SL 0.350 + 0.023*SL
E to Y tR 0.400 0.327 + 0.036*SL 0.324 + 0.037*SL 0.312 + 0.038*SL
tF 0.456 0.361 + 0.047*SL 0.360 + 0.047*SL 0.358 + 0.048*SL
tPLH 0.255 0.218 + 0.018*SL 0.220 + 0.018*SL 0.224 + 0.017*SL
tPHL 0.367 0.319 + 0.024*SL 0.322 + 0.023*SL 0.326 + 0.023*SL
F to Y tR 0.395 0.320 + 0.037*SL 0.318 + 0.038*SL 0.312 + 0.038*SL
tF 0.516 0.421 + 0.047*SL 0.421 + 0.047*SL 0.419 + 0.047*SL
tPLH 0.267 0.231 + 0.018*SL 0.233 + 0.018*SL 0.236 + 0.017*SL
tPHL 0.415 0.368 + 0.023*SL 0.370 + 0.023*SL 0.374 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-177 STDM110
OA222/OA222D2/OA222D2B/OA222D4
Three 2-ORs into 3-NAND with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA222D2B
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.120 0.085 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.109 0.076 + 0.017*SL 0.081 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.434 0.409 + 0.012*SL 0.420 + 0.010*SL 0.431 + 0.009*SL
tPHL 0.566 0.539 + 0.013*SL 0.552 + 0.010*SL 0.567 + 0.009*SL
B to Y tR 0.119 0.083 + 0.018*SL 0.084 + 0.018*SL 0.074 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.082 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.441 0.417 + 0.012*SL 0.428 + 0.010*SL 0.438 + 0.009*SL
tPHL 0.616 0.590 + 0.013*SL 0.602 + 0.010*SL 0.617 + 0.009*SL
C to Y tR 0.121 0.086 + 0.018*SL 0.086 + 0.018*SL 0.074 + 0.019*SL
tF 0.110 0.077 + 0.016*SL 0.081 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.478 0.453 + 0.012*SL 0.465 + 0.010*SL 0.476 + 0.009*SL
tPHL 0.608 0.581 + 0.013*SL 0.594 + 0.010*SL 0.609 + 0.009*SL
D to Y tR 0.121 0.085 + 0.018*SL 0.086 + 0.018*SL 0.075 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.082 + 0.015*SL 0.079 + 0.016*SL
tPLH 0.491 0.466 + 0.012*SL 0.477 + 0.010*SL 0.488 + 0.009*SL
tPHL 0.665 0.638 + 0.013*SL 0.651 + 0.010*SL 0.666 + 0.009*SL
E to Y tR 0.122 0.086 + 0.018*SL 0.088 + 0.018*SL 0.076 + 0.019*SL
tF 0.110 0.077 + 0.016*SL 0.081 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.511 0.485 + 0.013*SL 0.497 + 0.010*SL 0.508 + 0.009*SL
tPHL 0.628 0.602 + 0.013*SL 0.614 + 0.010*SL 0.629 + 0.009*SL
F to Y tR 0.122 0.087 + 0.018*SL 0.087 + 0.018*SL 0.076 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.083 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.521 0.496 + 0.013*SL 0.508 + 0.010*SL 0.519 + 0.009*SL
tPHL 0.683 0.657 + 0.013*SL 0.669 + 0.010*SL 0.685 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-178 Samsung ASIC
OA222/OA222D2/OA222D2B/OA222D4
Three 2-ORs into 3-NAND with 1X/2X/2X(Buffered)/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA222D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.108 0.089 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.097 0.079 + 0.009*SL 0.082 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.464 0.449 + 0.008*SL 0.458 + 0.005*SL 0.476 + 0.004*SL
tPHL 0.585 0.569 + 0.008*SL 0.578 + 0.006*SL 0.599 + 0.005*SL
B to Y tR 0.108 0.089 + 0.010*SL 0.093 + 0.009*SL 0.084 + 0.009*SL
tF 0.098 0.078 + 0.010*SL 0.086 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.472 0.457 + 0.008*SL 0.466 + 0.005*SL 0.484 + 0.004*SL
tPHL 0.635 0.619 + 0.008*SL 0.628 + 0.006*SL 0.649 + 0.005*SL
C to Y tR 0.109 0.089 + 0.010*SL 0.093 + 0.009*SL 0.086 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.082 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.509 0.494 + 0.008*SL 0.503 + 0.005*SL 0.522 + 0.004*SL
tPHL 0.627 0.611 + 0.008*SL 0.620 + 0.006*SL 0.641 + 0.005*SL
D to Y tR 0.109 0.090 + 0.010*SL 0.092 + 0.009*SL 0.086 + 0.009*SL
tF 0.098 0.080 + 0.009*SL 0.083 + 0.008*SL 0.086 + 0.008*SL
tPLH 0.522 0.507 + 0.008*SL 0.516 + 0.005*SL 0.534 + 0.004*SL
tPHL 0.684 0.668 + 0.008*SL 0.677 + 0.006*SL 0.699 + 0.005*SL
E to Y tR 0.110 0.091 + 0.010*SL 0.094 + 0.009*SL 0.088 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.082 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.542 0.526 + 0.008*SL 0.535 + 0.005*SL 0.554 + 0.004*SL
tPHL 0.646 0.631 + 0.008*SL 0.639 + 0.006*SL 0.661 + 0.005*SL
F to Y tR 0.111 0.091 + 0.010*SL 0.095 + 0.009*SL 0.087 + 0.009*SL
tF 0.098 0.080 + 0.009*SL 0.085 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.553 0.537 + 0.008*SL 0.546 + 0.005*SL 0.565 + 0.004*SL
tPHL 0.701 0.686 + 0.008*SL 0.695 + 0.006*SL 0.716 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-179 STDM110
OA2222/OA2222D2/OA2222D4
Four 2-ORs into 4-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA2222 OA2222
ABCDEFGH
0.9 1.0 0.9 1.0 1.0 1.0 1.1 1.0 3.33
OA2222D2 OA2222D2
ABCDEFGH
1.0 1.0 0.9 1.0 0.9 1.0 1.1 1.0 4.33
OA2222D4 OA2222D4
ABCDEFGH
1.0 1.0 0.9 1.0 1.0 1.0 1.1 1.0 5.00
E
F
Y
C
D
G
H
A
B
Truth Table
ABCDEFGHY
00xxxxxx1
xx00xxxx1
xxxx00xx1
xxxxxx001
Other States 0
STDM110 3-180 Samsung ASIC
OA2222/OA2222D2/OA2222D4
Four 2-ORs into 4-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA2222
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.640 0.497 + 0.072*SL 0.486 + 0.074*SL 0.472 + 0.076*SL
tF 0.631 0.430 + 0.101*SL 0.424 + 0.102*SL 0.425 + 0.102*SL
tPLH 0.237 0.165 + 0.036*SL 0.166 + 0.036*SL 0.167 + 0.036*SL
tPHL 0.381 0.282 + 0.049*SL 0.285 + 0.049*SL 0.288 + 0.048*SL
B to Y tR 0.632 0.485 + 0.074*SL 0.478 + 0.075*SL 0.471 + 0.076*SL
tF 0.698 0.495 + 0.101*SL 0.491 + 0.102*SL 0.493 + 0.102*SL
tPLH 0.248 0.176 + 0.036*SL 0.175 + 0.036*SL 0.178 + 0.036*SL
tPHL 0.432 0.334 + 0.049*SL 0.336 + 0.049*SL 0.338 + 0.048*SL
C to Y tR 0.629 0.481 + 0.074*SL 0.472 + 0.076*SL 0.462 + 0.077*SL
tF 0.636 0.434 + 0.101*SL 0.432 + 0.101*SL 0.431 + 0.101*SL
tPLH 0.291 0.219 + 0.036*SL 0.220 + 0.036*SL 0.222 + 0.036*SL
tPHL 0.442 0.343 + 0.050*SL 0.346 + 0.049*SL 0.349 + 0.048*SL
D to Y tR 0.624 0.473 + 0.075*SL 0.469 + 0.076*SL 0.462 + 0.077*SL
tF 0.704 0.502 + 0.101*SL 0.500 + 0.101*SL 0.499 + 0.102*SL
tPLH 0.304 0.231 + 0.036*SL 0.232 + 0.036*SL 0.234 + 0.036*SL
tPHL 0.493 0.395 + 0.049*SL 0.397 + 0.049*SL 0.400 + 0.048*SL
E to Y tR 0.601 0.452 + 0.074*SL 0.445 + 0.076*SL 0.436 + 0.077*SL
tF 0.638 0.436 + 0.101*SL 0.435 + 0.101*SL 0.434 + 0.102*SL
tPLH 0.325 0.252 + 0.036*SL 0.254 + 0.036*SL 0.257 + 0.035*SL
tPHL 0.469 0.370 + 0.050*SL 0.373 + 0.049*SL 0.377 + 0.048*SL
F to Y tR 0.599 0.448 + 0.075*SL 0.444 + 0.077*SL 0.437 + 0.077*SL
tF 0.704 0.501 + 0.101*SL 0.500 + 0.102*SL 0.499 + 0.102*SL
tPLH 0.336 0.263 + 0.037*SL 0.266 + 0.036*SL 0.268 + 0.035*SL
tPHL 0.520 0.421 + 0.049*SL 0.424 + 0.049*SL 0.426 + 0.048*SL
G to Y tR 0.644 0.495 + 0.075*SL 0.488 + 0.076*SL 0.479 + 0.077*SL
tF 0.813 0.583 + 0.115*SL 0.582 + 0.116*SL 0.581 + 0.116*SL
tPLH 0.351 0.277 + 0.037*SL 0.281 + 0.036*SL 0.285 + 0.036*SL
tPHL 0.620 0.507 + 0.056*SL 0.511 + 0.055*SL 0.515 + 0.055*SL
H to Y tR 0.642 0.492 + 0.075*SL 0.487 + 0.076*SL 0.481 + 0.077*SL
tF 0.893 0.661 + 0.116*SL 0.661 + 0.116*SL 0.661 + 0.116*SL
tPLH 0.361 0.286 + 0.037*SL 0.290 + 0.036*SL 0.294 + 0.036*SL
tPHL 0.677 0.565 + 0.056*SL 0.568 + 0.055*SL 0.571 + 0.055*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-181 STDM110
OA2222/OA2222D2/OA2222D4
Four 2-ORs into 4-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA2222D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.123 0.087 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.111 0.077 + 0.017*SL 0.084 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.471 0.445 + 0.013*SL 0.458 + 0.010*SL 0.470 + 0.009*SL
tPHL 0.599 0.572 + 0.013*SL 0.585 + 0.010*SL 0.601 + 0.009*SL
B to Y tR 0.123 0.088 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.112 0.078 + 0.017*SL 0.085 + 0.015*SL 0.079 + 0.016*SL
tPLH 0.481 0.456 + 0.013*SL 0.468 + 0.010*SL 0.480 + 0.009*SL
tPHL 0.658 0.631 + 0.013*SL 0.644 + 0.010*SL 0.660 + 0.009*SL
C to Y tR 0.124 0.088 + 0.018*SL 0.089 + 0.018*SL 0.078 + 0.019*SL
tF 0.111 0.077 + 0.017*SL 0.084 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.527 0.501 + 0.013*SL 0.514 + 0.010*SL 0.526 + 0.009*SL
tPHL 0.659 0.632 + 0.013*SL 0.645 + 0.010*SL 0.661 + 0.009*SL
D to Y tR 0.125 0.090 + 0.018*SL 0.090 + 0.018*SL 0.078 + 0.019*SL
tF 0.112 0.078 + 0.017*SL 0.085 + 0.015*SL 0.079 + 0.016*SL
tPLH 0.540 0.514 + 0.013*SL 0.526 + 0.010*SL 0.538 + 0.009*SL
tPHL 0.719 0.692 + 0.013*SL 0.705 + 0.010*SL 0.721 + 0.009*SL
E to Y tR 0.126 0.091 + 0.018*SL 0.091 + 0.018*SL 0.079 + 0.019*SL
tF 0.111 0.077 + 0.017*SL 0.084 + 0.015*SL 0.078 + 0.016*SL
tPLH 0.561 0.535 + 0.013*SL 0.547 + 0.010*SL 0.559 + 0.009*SL
tPHL 0.681 0.655 + 0.013*SL 0.668 + 0.010*SL 0.683 + 0.009*SL
F to Y tR 0.126 0.090 + 0.018*SL 0.091 + 0.018*SL 0.080 + 0.019*SL
tF 0.111 0.078 + 0.017*SL 0.084 + 0.015*SL 0.080 + 0.016*SL
tPLH 0.575 0.549 + 0.013*SL 0.562 + 0.010*SL 0.574 + 0.009*SL
tPHL 0.745 0.718 + 0.013*SL 0.731 + 0.010*SL 0.748 + 0.009*SL
G to Y tR 0.127 0.090 + 0.018*SL 0.093 + 0.018*SL 0.082 + 0.019*SL
tF 0.114 0.081 + 0.017*SL 0.086 + 0.015*SL 0.083 + 0.016*SL
tPLH 0.593 0.567 + 0.013*SL 0.580 + 0.010*SL 0.592 + 0.009*SL
tPHL 0.854 0.827 + 0.014*SL 0.840 + 0.010*SL 0.857 + 0.009*SL
H to Y tR 0.128 0.092 + 0.018*SL 0.093 + 0.018*SL 0.081 + 0.019*SL
tF 0.117 0.083 + 0.017*SL 0.090 + 0.015*SL 0.084 + 0.016*SL
tPLH 0.605 0.579 + 0.013*SL 0.592 + 0.010*SL 0.604 + 0.009*SL
tPHL 0.922 0.895 + 0.014*SL 0.908 + 0.010*SL 0.925 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-182 Samsung ASIC
OA2222/OA2222D2/OA2222D4
Four 2-ORs into 4-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA2222D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.113 0.093 + 0.010*SL 0.097 + 0.009*SL 0.090 + 0.009*SL
tF 0.098 0.079 + 0.009*SL 0.085 + 0.008*SL 0.086 + 0.008*SL
tPLH 0.506 0.490 + 0.008*SL 0.499 + 0.006*SL 0.519 + 0.004*SL
tPHL 0.610 0.594 + 0.008*SL 0.603 + 0.006*SL 0.625 + 0.005*SL
B to Y tR 0.113 0.093 + 0.010*SL 0.097 + 0.009*SL 0.089 + 0.009*SL
tF 0.098 0.081 + 0.009*SL 0.084 + 0.008*SL 0.087 + 0.008*SL
tPLH 0.516 0.500 + 0.008*SL 0.509 + 0.006*SL 0.529 + 0.004*SL
tPHL 0.668 0.652 + 0.008*SL 0.661 + 0.006*SL 0.683 + 0.005*SL
C to Y tR 0.114 0.094 + 0.010*SL 0.098 + 0.009*SL 0.092 + 0.009*SL
tF 0.098 0.079 + 0.009*SL 0.085 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.563 0.548 + 0.008*SL 0.557 + 0.006*SL 0.577 + 0.004*SL
tPHL 0.671 0.655 + 0.008*SL 0.665 + 0.006*SL 0.686 + 0.005*SL
D to Y tR 0.115 0.095 + 0.010*SL 0.099 + 0.009*SL 0.091 + 0.009*SL
tF 0.098 0.079 + 0.010*SL 0.086 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.575 0.560 + 0.008*SL 0.569 + 0.006*SL 0.589 + 0.005*SL
tPHL 0.729 0.713 + 0.008*SL 0.723 + 0.006*SL 0.744 + 0.005*SL
E to Y tR 0.116 0.096 + 0.010*SL 0.100 + 0.009*SL 0.093 + 0.009*SL
tF 0.099 0.079 + 0.010*SL 0.087 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.594 0.579 + 0.008*SL 0.588 + 0.006*SL 0.609 + 0.005*SL
tPHL 0.698 0.682 + 0.008*SL 0.692 + 0.006*SL 0.713 + 0.005*SL
F to Y tR 0.115 0.095 + 0.010*SL 0.100 + 0.009*SL 0.093 + 0.009*SL
tF 0.100 0.080 + 0.010*SL 0.088 + 0.008*SL 0.086 + 0.008*SL
tPLH 0.605 0.589 + 0.008*SL 0.598 + 0.006*SL 0.619 + 0.004*SL
tPHL 0.755 0.739 + 0.008*SL 0.749 + 0.006*SL 0.770 + 0.005*SL
G to Y tR 0.117 0.096 + 0.010*SL 0.102 + 0.009*SL 0.095 + 0.009*SL
tF 0.102 0.084 + 0.009*SL 0.089 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.627 0.611 + 0.008*SL 0.620 + 0.006*SL 0.642 + 0.005*SL
tPHL 0.866 0.850 + 0.008*SL 0.860 + 0.006*SL 0.882 + 0.005*SL
H to Y tR 0.117 0.097 + 0.010*SL 0.102 + 0.009*SL 0.094 + 0.009*SL
tF 0.103 0.083 + 0.010*SL 0.091 + 0.008*SL 0.089 + 0.008*SL
tPLH 0.638 0.622 + 0.008*SL 0.631 + 0.006*SL 0.652 + 0.005*SL
tPHL 0.931 0.914 + 0.008*SL 0.924 + 0.006*SL 0.946 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-183 STDM110
OA31DH/OA31/OA31D2/OA31D4
3-OR into 2-NAND with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA31DH OA31 OA31D2 OA31D4
ABCDABCDABCDABCD
0.6 0.6 0.6 0.6 0.8 0.9 0.9 0.9 1.8 1.8 1.7 1.7 0.9 0.9 0.9 0.9
Gate Count
OA31DH OA31 OA31D2 OA31D4
2.00 2.00 2.67 3.33
C
DY
A
B
Truth Table
ABCDY
000x1
xxx01
Other States 0
STDM110 3-184 Samsung ASIC
OA31DH/OA31/OA31D2/OA31D4
3-OR into 2-NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA31DH
OA31
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.815 0.384 + 0.216*SL 0.370 + 0.219*SL 0.377 + 0.218*SL
tF 0.347 0.168 + 0.090*SL 0.153 + 0.093*SL 0.140 + 0.095*SL
tPLH 0.391 0.193 + 0.099*SL 0.194 + 0.099*SL 0.196 + 0.099*SL
tPHL 0.235 0.142 + 0.047*SL 0.142 + 0.046*SL 0.143 + 0.046*SL
B to Y tR 0.819 0.387 + 0.216*SL 0.379 + 0.218*SL 0.378 + 0.218*SL
tF 0.382 0.201 + 0.090*SL 0.188 + 0.093*SL 0.176 + 0.095*SL
tPLH 0.442 0.242 + 0.100*SL 0.245 + 0.099*SL 0.248 + 0.099*SL
tPHL 0.262 0.168 + 0.047*SL 0.170 + 0.047*SL 0.172 + 0.046*SL
C to Y tR 0.816 0.383 + 0.217*SL 0.378 + 0.218*SL 0.378 + 0.218*SL
tF 0.420 0.241 + 0.090*SL 0.228 + 0.093*SL 0.216 + 0.094*SL
tPLH 0.465 0.265 + 0.100*SL 0.269 + 0.099*SL 0.271 + 0.099*SL
tPHL 0.279 0.181 + 0.049*SL 0.187 + 0.047*SL 0.192 + 0.047*SL
D to Y tR 0.361 0.201 + 0.080*SL 0.189 + 0.083*SL 0.175 + 0.085*SL
tF 0.411 0.226 + 0.093*SL 0.222 + 0.094*SL 0.216 + 0.094*SL
tPLH 0.242 0.166 + 0.038*SL 0.167 + 0.038*SL 0.168 + 0.038*SL
tPHL 0.272 0.175 + 0.049*SL 0.181 + 0.047*SL 0.186 + 0.047*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.538 0.316 + 0.111*SL 0.304 + 0.114*SL 0.293 + 0.116*SL
tF 0.370 0.204 + 0.083*SL 0.194 + 0.086*SL 0.183 + 0.087*SL
tPLH 0.261 0.157 + 0.052*SL 0.157 + 0.052*SL 0.158 + 0.052*SL
tPHL 0.249 0.164 + 0.043*SL 0.165 + 0.042*SL 0.166 + 0.042*SL
B to Y tR 0.540 0.315 + 0.112*SL 0.308 + 0.114*SL 0.300 + 0.115*SL
tF 0.425 0.258 + 0.084*SL 0.249 + 0.086*SL 0.241 + 0.087*SL
tPLH 0.304 0.198 + 0.053*SL 0.200 + 0.052*SL 0.202 + 0.052*SL
tPHL 0.293 0.207 + 0.043*SL 0.209 + 0.042*SL 0.211 + 0.042*SL
C to Y tR 0.536 0.309 + 0.113*SL 0.303 + 0.115*SL 0.300 + 0.115*SL
tF 0.489 0.322 + 0.083*SL 0.314 + 0.085*SL 0.306 + 0.087*SL
tPLH 0.326 0.220 + 0.053*SL 0.222 + 0.052*SL 0.224 + 0.052*SL
tPHL 0.325 0.236 + 0.044*SL 0.242 + 0.043*SL 0.246 + 0.042*SL
D to Y tR 0.226 0.159 + 0.034*SL 0.151 + 0.036*SL 0.141 + 0.037*SL
tF 0.484 0.314 + 0.085*SL 0.310 + 0.086*SL 0.305 + 0.087*SL
tPLH 0.159 0.122 + 0.018*SL 0.127 + 0.017*SL 0.127 + 0.017*SL
tPHL 0.340 0.250 + 0.045*SL 0.256 + 0.043*SL 0.262 + 0.043*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-185 STDM110
OA31DH/OA31/OA31D2/OA31D4
3-OR into 2-NAND with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA31D2
OA31D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.395 0.284 + 0.056*SL 0.276 + 0.058*SL 0.260 + 0.059*SL
tF 0.249 0.173 + 0.038*SL 0.166 + 0.040*SL 0.151 + 0.041*SL
tPLH 0.198 0.145 + 0.026*SL 0.144 + 0.027*SL 0.145 + 0.027*SL
tPHL 0.185 0.144 + 0.020*SL 0.145 + 0.020*SL 0.147 + 0.020*SL
B to Y tR 0.395 0.281 + 0.057*SL 0.277 + 0.058*SL 0.266 + 0.059*SL
tF 0.301 0.224 + 0.039*SL 0.218 + 0.040*SL 0.205 + 0.041*SL
tPLH 0.236 0.182 + 0.027*SL 0.183 + 0.027*SL 0.186 + 0.027*SL
tPHL 0.224 0.182 + 0.021*SL 0.184 + 0.020*SL 0.187 + 0.020*SL
C to Y tR 0.390 0.276 + 0.057*SL 0.272 + 0.058*SL 0.265 + 0.059*SL
tF 0.360 0.282 + 0.039*SL 0.276 + 0.040*SL 0.263 + 0.041*SL
tPLH 0.254 0.199 + 0.027*SL 0.201 + 0.027*SL 0.203 + 0.027*SL
tPHL 0.248 0.204 + 0.022*SL 0.208 + 0.021*SL 0.215 + 0.020*SL
D to Y tR 0.182 0.148 + 0.017*SL 0.145 + 0.018*SL 0.132 + 0.019*SL
tF 0.350 0.269 + 0.040*SL 0.268 + 0.041*SL 0.261 + 0.041*SL
tPLH 0.135 0.113 + 0.011*SL 0.121 + 0.009*SL 0.122 + 0.009*SL
tPHL 0.260 0.216 + 0.022*SL 0.220 + 0.021*SL 0.228 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.106 0.086 + 0.010*SL 0.090 + 0.009*SL 0.082 + 0.009*SL
tF 0.090 0.073 + 0.009*SL 0.076 + 0.008*SL 0.078 + 0.008*SL
tPLH 0.471 0.456 + 0.008*SL 0.464 + 0.005*SL 0.483 + 0.004*SL
tPHL 0.440 0.425 + 0.008*SL 0.434 + 0.006*SL 0.454 + 0.004*SL
B to Y tR 0.106 0.085 + 0.010*SL 0.091 + 0.009*SL 0.082 + 0.009*SL
tF 0.091 0.072 + 0.010*SL 0.079 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.513 0.498 + 0.008*SL 0.507 + 0.005*SL 0.525 + 0.004*SL
tPHL 0.492 0.477 + 0.008*SL 0.486 + 0.006*SL 0.506 + 0.005*SL
C to Y tR 0.106 0.086 + 0.010*SL 0.090 + 0.009*SL 0.082 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.080 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.531 0.516 + 0.008*SL 0.525 + 0.005*SL 0.543 + 0.004*SL
tPHL 0.530 0.515 + 0.008*SL 0.524 + 0.006*SL 0.544 + 0.005*SL
D to Y tR 0.099 0.081 + 0.009*SL 0.081 + 0.009*SL 0.076 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.079 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.359 0.344 + 0.007*SL 0.352 + 0.005*SL 0.369 + 0.004*SL
tPHL 0.547 0.532 + 0.008*SL 0.541 + 0.006*SL 0.561 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-186 Samsung ASIC
OA311/OA311D2/OA311D4
3-OR into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA311 OA311D2 OA311D4
ABCDEABCDEABCDE
0.9 0.9 0.9 1.0 1.0 0.9 0.9 0.9 1.0 1.0 0.9 0.9 1.0 1.0 1.0
Gate Count
OA311 OA311D2 OA311D4
2.00 3.00 3.67
D
E
Y
A
B
C
Truth Table
ABCDEY
000xx1
xxx0x1
xxxx01
Other States 0
Samsung ASIC 3-187 STDM110
OA311/OA311D2/OA311D4
3-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA311
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.565 0.342 + 0.112*SL 0.330 + 0.115*SL 0.322 + 0.116*SL
tF 0.465 0.269 + 0.098*SL 0.259 + 0.101*SL 0.253 + 0.101*SL
tPLH 0.276 0.171 + 0.052*SL 0.171 + 0.052*SL 0.172 + 0.052*SL
tPHL 0.277 0.179 + 0.049*SL 0.181 + 0.048*SL 0.182 + 0.048*SL
B to Y tR 0.568 0.342 + 0.113*SL 0.336 + 0.114*SL 0.330 + 0.115*SL
tF 0.534 0.336 + 0.099*SL 0.328 + 0.101*SL 0.324 + 0.101*SL
tPLH 0.321 0.215 + 0.053*SL 0.217 + 0.052*SL 0.219 + 0.052*SL
tPHL 0.330 0.232 + 0.049*SL 0.234 + 0.048*SL 0.236 + 0.048*SL
C to Y tR 0.565 0.338 + 0.113*SL 0.332 + 0.115*SL 0.330 + 0.115*SL
tF 0.605 0.408 + 0.098*SL 0.400 + 0.100*SL 0.396 + 0.101*SL
tPLH 0.339 0.233 + 0.053*SL 0.236 + 0.052*SL 0.238 + 0.052*SL
tPHL 0.366 0.265 + 0.050*SL 0.271 + 0.049*SL 0.275 + 0.048*SL
D to Y tR 0.237 0.169 + 0.034*SL 0.161 + 0.036*SL 0.152 + 0.037*SL
tF 0.603 0.405 + 0.099*SL 0.399 + 0.100*SL 0.397 + 0.101*SL
tPLH 0.169 0.134 + 0.018*SL 0.137 + 0.017*SL 0.137 + 0.017*SL
tPHL 0.403 0.301 + 0.051*SL 0.308 + 0.049*SL 0.314 + 0.049*SL
E to Y tR 0.251 0.181 + 0.035*SL 0.174 + 0.037*SL 0.165 + 0.038*SL
tF 0.603 0.404 + 0.099*SL 0.399 + 0.100*SL 0.397 + 0.101*SL
tPLH 0.178 0.142 + 0.018*SL 0.143 + 0.018*SL 0.144 + 0.017*SL
tPHL 0.402 0.300 + 0.051*SL 0.306 + 0.049*SL 0.312 + 0.049*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-188 Samsung ASIC
OA311/OA311D2/OA311D4
3-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA311D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.116 0.080 + 0.018*SL 0.080 + 0.018*SL 0.069 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.446 0.421 + 0.012*SL 0.432 + 0.010*SL 0.442 + 0.009*SL
tPHL 0.462 0.436 + 0.013*SL 0.448 + 0.010*SL 0.463 + 0.009*SL
B to Y tR 0.116 0.079 + 0.018*SL 0.081 + 0.018*SL 0.069 + 0.019*SL
tF 0.107 0.074 + 0.017*SL 0.078 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.491 0.466 + 0.013*SL 0.477 + 0.010*SL 0.487 + 0.009*SL
tPHL 0.525 0.498 + 0.013*SL 0.511 + 0.010*SL 0.526 + 0.009*SL
C to Y tR 0.116 0.079 + 0.018*SL 0.081 + 0.018*SL 0.069 + 0.019*SL
tF 0.109 0.076 + 0.017*SL 0.080 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.509 0.484 + 0.013*SL 0.496 + 0.010*SL 0.506 + 0.009*SL
tPHL 0.571 0.544 + 0.013*SL 0.557 + 0.010*SL 0.572 + 0.009*SL
D to Y tR 0.107 0.070 + 0.019*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.109 0.076 + 0.017*SL 0.080 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.342 0.318 + 0.012*SL 0.328 + 0.010*SL 0.336 + 0.009*SL
tPHL 0.607 0.580 + 0.013*SL 0.593 + 0.010*SL 0.609 + 0.009*SL
E to Y tR 0.107 0.071 + 0.018*SL 0.069 + 0.019*SL 0.061 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.080 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.352 0.328 + 0.012*SL 0.338 + 0.010*SL 0.346 + 0.009*SL
tPHL 0.606 0.579 + 0.013*SL 0.592 + 0.010*SL 0.607 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-189 STDM110
OA311/OA311D2/OA311D4
3-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA311D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.105 0.085 + 0.010*SL 0.089 + 0.009*SL 0.082 + 0.009*SL
tF 0.093 0.076 + 0.009*SL 0.079 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.487 0.472 + 0.008*SL 0.480 + 0.005*SL 0.498 + 0.004*SL
tPHL 0.483 0.467 + 0.008*SL 0.476 + 0.006*SL 0.496 + 0.005*SL
B to Y tR 0.105 0.084 + 0.010*SL 0.090 + 0.009*SL 0.080 + 0.009*SL
tF 0.094 0.075 + 0.009*SL 0.080 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.534 0.519 + 0.008*SL 0.527 + 0.005*SL 0.545 + 0.004*SL
tPHL 0.547 0.532 + 0.008*SL 0.541 + 0.006*SL 0.561 + 0.005*SL
C to Y tR 0.105 0.086 + 0.010*SL 0.089 + 0.009*SL 0.081 + 0.009*SL
tF 0.097 0.078 + 0.009*SL 0.084 + 0.008*SL 0.083 + 0.008*SL
tPLH 0.550 0.535 + 0.008*SL 0.544 + 0.005*SL 0.562 + 0.004*SL
tPHL 0.591 0.576 + 0.008*SL 0.585 + 0.006*SL 0.606 + 0.005*SL
D to Y tR 0.097 0.078 + 0.010*SL 0.080 + 0.009*SL 0.074 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.082 + 0.008*SL 0.084 + 0.008*SL
tPLH 0.360 0.345 + 0.007*SL 0.353 + 0.005*SL 0.369 + 0.004*SL
tPHL 0.628 0.612 + 0.008*SL 0.621 + 0.006*SL 0.642 + 0.005*SL
E to Y tR 0.098 0.078 + 0.010*SL 0.083 + 0.009*SL 0.074 + 0.009*SL
tF 0.096 0.078 + 0.009*SL 0.082 + 0.008*SL 0.084 + 0.008*SL
tPLH 0.371 0.356 + 0.007*SL 0.364 + 0.005*SL 0.380 + 0.004*SL
tPHL 0.626 0.610 + 0.008*SL 0.619 + 0.006*SL 0.640 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-190 Samsung ASIC
OA3111/OA3111D2
3-OR into 4-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA3111 OA3111D2 OA3111 OA3111D2
ABCDEFABCDEF
0.9 1.0 1.0 1.0 1.0 1.0 0.9 1.0 1.0 1.0 1.0 1.0 2.33 3.33
D
E
Y
A
C
B
F
Truth Table
ABCDEFY
000xxx1
xxx0xx1
xxxx0x1
xxxxx01
Other States 0
Samsung ASIC 3-191 STDM110
OA3111/OA3111D2
3-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA3111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.653 0.427 + 0.113*SL 0.418 + 0.115*SL 0.414 + 0.116*SL
tF 0.614 0.393 + 0.111*SL 0.386 + 0.112*SL 0.386 + 0.112*SL
tPLH 0.319 0.214 + 0.053*SL 0.215 + 0.052*SL 0.216 + 0.052*SL
tPHL 0.329 0.222 + 0.053*SL 0.223 + 0.053*SL 0.225 + 0.053*SL
B to Y tR 0.656 0.429 + 0.113*SL 0.423 + 0.115*SL 0.419 + 0.115*SL
tF 0.694 0.469 + 0.113*SL 0.463 + 0.114*SL 0.464 + 0.114*SL
tPLH 0.359 0.253 + 0.053*SL 0.255 + 0.052*SL 0.257 + 0.052*SL
tPHL 0.390 0.282 + 0.054*SL 0.283 + 0.054*SL 0.285 + 0.054*SL
C to Y tR 0.653 0.425 + 0.114*SL 0.421 + 0.115*SL 0.419 + 0.115*SL
tF 0.765 0.543 + 0.111*SL 0.536 + 0.113*SL 0.538 + 0.112*SL
tPLH 0.377 0.271 + 0.053*SL 0.274 + 0.053*SL 0.276 + 0.052*SL
tPHL 0.429 0.319 + 0.055*SL 0.323 + 0.054*SL 0.326 + 0.053*SL
D to Y tR 0.269 0.197 + 0.036*SL 0.192 + 0.037*SL 0.184 + 0.038*SL
tF 0.768 0.546 + 0.111*SL 0.542 + 0.112*SL 0.541 + 0.112*SL
tPLH 0.190 0.155 + 0.018*SL 0.156 + 0.017*SL 0.156 + 0.017*SL
tPHL 0.483 0.372 + 0.055*SL 0.377 + 0.054*SL 0.381 + 0.054*SL
E to Y tR 0.281 0.210 + 0.036*SL 0.204 + 0.037*SL 0.197 + 0.038*SL
tF 0.768 0.545 + 0.111*SL 0.542 + 0.112*SL 0.541 + 0.112*SL
tPLH 0.197 0.162 + 0.018*SL 0.163 + 0.018*SL 0.163 + 0.017*SL
tPHL 0.493 0.383 + 0.055*SL 0.387 + 0.054*SL 0.392 + 0.054*SL
F to Y tR 0.295 0.223 + 0.036*SL 0.219 + 0.037*SL 0.210 + 0.038*SL
tF 0.767 0.544 + 0.112*SL 0.542 + 0.112*SL 0.541 + 0.112*SL
tPLH 0.203 0.167 + 0.018*SL 0.168 + 0.018*SL 0.169 + 0.018*SL
tPHL 0.500 0.389 + 0.055*SL 0.394 + 0.054*SL 0.399 + 0.054*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-192 Samsung ASIC
OA3111/OA3111D2
3-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA3111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.120 0.083 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.112 0.078 + 0.017*SL 0.085 + 0.015*SL 0.081 + 0.016*SL
tPLH 0.511 0.486 + 0.013*SL 0.498 + 0.010*SL 0.509 + 0.009*SL
tPHL 0.544 0.517 + 0.013*SL 0.530 + 0.010*SL 0.546 + 0.009*SL
B to Y tR 0.120 0.084 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.114 0.080 + 0.017*SL 0.085 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.551 0.525 + 0.013*SL 0.537 + 0.010*SL 0.548 + 0.009*SL
tPHL 0.614 0.587 + 0.014*SL 0.600 + 0.010*SL 0.617 + 0.009*SL
C to Y tR 0.120 0.084 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.116 0.083 + 0.017*SL 0.089 + 0.015*SL 0.083 + 0.016*SL
tPLH 0.568 0.543 + 0.013*SL 0.555 + 0.010*SL 0.566 + 0.009*SL
tPHL 0.661 0.634 + 0.014*SL 0.647 + 0.010*SL 0.664 + 0.009*SL
D to Y tR 0.109 0.073 + 0.018*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.115 0.081 + 0.017*SL 0.087 + 0.015*SL 0.084 + 0.016*SL
tPLH 0.374 0.350 + 0.012*SL 0.360 + 0.010*SL 0.369 + 0.009*SL
tPHL 0.715 0.687 + 0.014*SL 0.701 + 0.010*SL 0.718 + 0.009*SL
E to Y tR 0.110 0.073 + 0.018*SL 0.074 + 0.018*SL 0.064 + 0.019*SL
tF 0.115 0.081 + 0.017*SL 0.088 + 0.015*SL 0.084 + 0.016*SL
tPLH 0.384 0.360 + 0.012*SL 0.370 + 0.010*SL 0.378 + 0.009*SL
tPHL 0.727 0.700 + 0.014*SL 0.713 + 0.010*SL 0.730 + 0.009*SL
F to Y tR 0.110 0.074 + 0.018*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.115 0.082 + 0.017*SL 0.086 + 0.016*SL 0.084 + 0.016*SL
tPLH 0.392 0.368 + 0.012*SL 0.378 + 0.010*SL 0.387 + 0.009*SL
tPHL 0.733 0.706 + 0.014*SL 0.719 + 0.010*SL 0.736 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-193 STDM110
OA32/OA32D2/OA32D4
3-OR and 2-OR into 2-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA32 OA32D2 OA32D4
ABCDEABCDEABCDE
0.8 0.9 0.9 0.8 0.9 0.8 0.9 0.9 0.9 0.9 0.8 0.9 0.9 0.8 0.9
Gate Count
OA32 OA32D2 OA32D4
2.33 3.33 4.00
D
E
Y
A
B
C
Truth Table
ABCDEY
000xx1
xxx001
Other States 0
STDM110 3-194 Samsung ASIC
OA32/OA32D2/OA32D4
3-OR and 2-OR into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA32
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.660 0.437 + 0.111*SL 0.424 + 0.115*SL 0.412 + 0.116*SL
tF 0.473 0.280 + 0.096*SL 0.272 + 0.098*SL 0.269 + 0.099*SL
tPLH 0.269 0.163 + 0.053*SL 0.163 + 0.053*SL 0.165 + 0.053*SL
tPHL 0.325 0.227 + 0.049*SL 0.230 + 0.048*SL 0.233 + 0.048*SL
B to Y tR 0.661 0.436 + 0.112*SL 0.428 + 0.115*SL 0.419 + 0.116*SL
tF 0.535 0.341 + 0.097*SL 0.335 + 0.099*SL 0.334 + 0.099*SL
tPLH 0.312 0.204 + 0.054*SL 0.206 + 0.054*SL 0.209 + 0.053*SL
tPHL 0.376 0.278 + 0.049*SL 0.281 + 0.048*SL 0.284 + 0.048*SL
C to Y tR 0.657 0.430 + 0.113*SL 0.423 + 0.115*SL 0.418 + 0.116*SL
tF 0.601 0.407 + 0.097*SL 0.402 + 0.098*SL 0.402 + 0.098*SL
tPLH 0.331 0.223 + 0.054*SL 0.225 + 0.054*SL 0.228 + 0.053*SL
tPHL 0.413 0.314 + 0.050*SL 0.318 + 0.049*SL 0.323 + 0.048*SL
D to Y tR 0.407 0.262 + 0.073*SL 0.253 + 0.075*SL 0.241 + 0.076*SL
tF 0.539 0.344 + 0.097*SL 0.340 + 0.098*SL 0.340 + 0.099*SL
tPLH 0.245 0.176 + 0.035*SL 0.177 + 0.035*SL 0.178 + 0.034*SL
tPHL 0.392 0.290 + 0.051*SL 0.297 + 0.049*SL 0.303 + 0.048*SL
E to Y tR 0.400 0.251 + 0.074*SL 0.246 + 0.076*SL 0.240 + 0.076*SL
tF 0.599 0.403 + 0.098*SL 0.401 + 0.098*SL 0.401 + 0.098*SL
tPLH 0.256 0.186 + 0.035*SL 0.188 + 0.035*SL 0.189 + 0.034*SL
tPHL 0.443 0.342 + 0.050*SL 0.348 + 0.049*SL 0.353 + 0.048*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-195 STDM110
OA32/OA32D2/OA32D4
3-OR and 2-OR into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA32D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.121 0.085 + 0.018*SL 0.086 + 0.018*SL 0.076 + 0.019*SL
tF 0.106 0.074 + 0.016*SL 0.078 + 0.015*SL 0.074 + 0.016*SL
tPLH 0.465 0.439 + 0.013*SL 0.451 + 0.010*SL 0.462 + 0.009*SL
tPHL 0.510 0.484 + 0.013*SL 0.496 + 0.010*SL 0.511 + 0.009*SL
B to Y tR 0.122 0.086 + 0.018*SL 0.086 + 0.018*SL 0.076 + 0.019*SL
tF 0.107 0.074 + 0.016*SL 0.078 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.508 0.483 + 0.013*SL 0.494 + 0.010*SL 0.506 + 0.009*SL
tPHL 0.571 0.545 + 0.013*SL 0.558 + 0.010*SL 0.572 + 0.009*SL
C to Y tR 0.121 0.085 + 0.018*SL 0.086 + 0.018*SL 0.076 + 0.019*SL
tF 0.108 0.075 + 0.017*SL 0.080 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.525 0.500 + 0.013*SL 0.512 + 0.010*SL 0.523 + 0.009*SL
tPHL 0.616 0.590 + 0.013*SL 0.602 + 0.010*SL 0.617 + 0.009*SL
D to Y tR 0.121 0.085 + 0.018*SL 0.085 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.075 + 0.016*SL 0.080 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.439 0.413 + 0.013*SL 0.425 + 0.010*SL 0.436 + 0.009*SL
tPHL 0.586 0.560 + 0.013*SL 0.572 + 0.010*SL 0.587 + 0.009*SL
E to Y tR 0.121 0.084 + 0.018*SL 0.086 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.075 + 0.017*SL 0.080 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.449 0.424 + 0.013*SL 0.436 + 0.010*SL 0.447 + 0.009*SL
tPHL 0.644 0.618 + 0.013*SL 0.630 + 0.010*SL 0.645 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-196 Samsung ASIC
OA32/OA32D2/OA32D4
3-OR and 2-OR into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA32D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.109 0.088 + 0.010*SL 0.094 + 0.009*SL 0.086 + 0.009*SL
tF 0.092 0.073 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 0.498 0.482 + 0.008*SL 0.491 + 0.005*SL 0.510 + 0.004*SL
tPHL 0.526 0.510 + 0.008*SL 0.519 + 0.006*SL 0.539 + 0.005*SL
B to Y tR 0.109 0.090 + 0.010*SL 0.093 + 0.009*SL 0.087 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.079 + 0.008*SL 0.080 + 0.008*SL
tPLH 0.542 0.526 + 0.008*SL 0.535 + 0.005*SL 0.554 + 0.004*SL
tPHL 0.587 0.571 + 0.008*SL 0.580 + 0.006*SL 0.600 + 0.005*SL
C to Y tR 0.109 0.089 + 0.010*SL 0.094 + 0.009*SL 0.086 + 0.009*SL
tF 0.095 0.076 + 0.010*SL 0.082 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.559 0.543 + 0.008*SL 0.552 + 0.005*SL 0.571 + 0.004*SL
tPHL 0.631 0.616 + 0.008*SL 0.625 + 0.006*SL 0.645 + 0.005*SL
D to Y tR 0.108 0.089 + 0.010*SL 0.091 + 0.009*SL 0.085 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.080 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.464 0.449 + 0.008*SL 0.458 + 0.005*SL 0.476 + 0.004*SL
tPHL 0.602 0.586 + 0.008*SL 0.595 + 0.006*SL 0.616 + 0.005*SL
E to Y tR 0.108 0.088 + 0.010*SL 0.093 + 0.009*SL 0.084 + 0.009*SL
tF 0.096 0.077 + 0.009*SL 0.083 + 0.008*SL 0.081 + 0.008*SL
tPLH 0.475 0.459 + 0.008*SL 0.468 + 0.005*SL 0.487 + 0.004*SL
tPHL 0.659 0.644 + 0.008*SL 0.653 + 0.006*SL 0.673 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-197 STDM110
OA321/OA321D2/OA321D4
3-OR and 2-OR into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA321 OA321D2 OA321D4
ABCDEFABCDEFABCDEF
0.9 0.9 0.90 0.9 0.9 0.9 0.9 0.9 0.90 0.9 0.9 0.9 0.9 0.9 0.90 0.9 0.9 0.9
Gate Count
OA321 OA321D2 OA321D4
3.00 3.67 4.33
D
E
Y
A
B
C
F
Truth Table
ABCDEFY
000xxx1
xxx00x1
xxxxx01
Other States 0
STDM110 3-198 Samsung ASIC
OA321/OA321D2/OA321D4
3-OR and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA321
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.705 0.480 + 0.112*SL 0.468 + 0.115*SL 0.459 + 0.116*SL
tF 0.602 0.380 + 0.111*SL 0.373 + 0.113*SL 0.374 + 0.113*SL
tPLH 0.292 0.185 + 0.054*SL 0.186 + 0.054*SL 0.188 + 0.053*SL
tPHL 0.364 0.255 + 0.055*SL 0.257 + 0.054*SL 0.260 + 0.054*SL
B to Y tR 0.707 0.481 + 0.113*SL 0.473 + 0.115*SL 0.466 + 0.116*SL
tF 0.674 0.450 + 0.112*SL 0.445 + 0.113*SL 0.449 + 0.113*SL
tPLH 0.336 0.227 + 0.054*SL 0.229 + 0.054*SL 0.232 + 0.053*SL
tPHL 0.423 0.314 + 0.055*SL 0.316 + 0.054*SL 0.319 + 0.054*SL
C to Y tR 0.704 0.476 + 0.114*SL 0.469 + 0.115*SL 0.466 + 0.116*SL
tF 0.751 0.527 + 0.112*SL 0.523 + 0.113*SL 0.526 + 0.113*SL
tPLH 0.354 0.245 + 0.054*SL 0.248 + 0.054*SL 0.251 + 0.053*SL
tPHL 0.468 0.356 + 0.056*SL 0.361 + 0.055*SL 0.365 + 0.054*SL
D to Y tR 0.447 0.300 + 0.073*SL 0.293 + 0.075*SL 0.282 + 0.077*SL
tF 0.680 0.458 + 0.111*SL 0.455 + 0.112*SL 0.454 + 0.112*SL
tPLH 0.272 0.202 + 0.035*SL 0.203 + 0.035*SL 0.204 + 0.034*SL
tPHL 0.465 0.352 + 0.056*SL 0.358 + 0.055*SL 0.365 + 0.054*SL
E to Y tR 0.441 0.291 + 0.075*SL 0.288 + 0.076*SL 0.283 + 0.077*SL
tF 0.753 0.529 + 0.112*SL 0.528 + 0.112*SL 0.527 + 0.112*SL
tPLH 0.283 0.213 + 0.035*SL 0.214 + 0.035*SL 0.215 + 0.034*SL
tPHL 0.523 0.412 + 0.056*SL 0.416 + 0.055*SL 0.421 + 0.054*SL
F to Y tR 0.359 0.294 + 0.033*SL 0.285 + 0.035*SL 0.272 + 0.036*SL
tF 0.753 0.529 + 0.112*SL 0.528 + 0.112*SL 0.527 + 0.112*SL
tPLH 0.186 0.151 + 0.018*SL 0.152 + 0.017*SL 0.153 + 0.017*SL
tPHL 0.539 0.427 + 0.056*SL 0.432 + 0.055*SL 0.438 + 0.054*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-199 STDM110
OA321/OA321D2/OA321D4
3-OR and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA321D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.120 0.084 + 0.018*SL 0.084 + 0.018*SL 0.072 + 0.019*SL
tF 0.107 0.074 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.477 0.452 + 0.013*SL 0.464 + 0.010*SL 0.475 + 0.009*SL
tPHL 0.551 0.525 + 0.013*SL 0.537 + 0.010*SL 0.551 + 0.009*SL
B to Y tR 0.119 0.084 + 0.018*SL 0.084 + 0.018*SL 0.072 + 0.019*SL
tF 0.109 0.074 + 0.017*SL 0.080 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.520 0.495 + 0.013*SL 0.507 + 0.010*SL 0.517 + 0.009*SL
tPHL 0.619 0.593 + 0.013*SL 0.605 + 0.010*SL 0.619 + 0.009*SL
C to Y tR 0.120 0.084 + 0.018*SL 0.084 + 0.018*SL 0.072 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.080 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.538 0.513 + 0.013*SL 0.525 + 0.010*SL 0.535 + 0.009*SL
tPHL 0.673 0.646 + 0.013*SL 0.659 + 0.010*SL 0.673 + 0.009*SL
D to Y tR 0.113 0.077 + 0.018*SL 0.078 + 0.018*SL 0.065 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.081 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.455 0.431 + 0.012*SL 0.442 + 0.009*SL 0.451 + 0.009*SL
tPHL 0.657 0.631 + 0.013*SL 0.643 + 0.010*SL 0.657 + 0.009*SL
E to Y tR 0.113 0.078 + 0.018*SL 0.077 + 0.018*SL 0.067 + 0.019*SL
tF 0.110 0.077 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.467 0.442 + 0.012*SL 0.453 + 0.009*SL 0.462 + 0.009*SL
tPHL 0.728 0.701 + 0.013*SL 0.713 + 0.010*SL 0.728 + 0.009*SL
F to Y tR 0.108 0.072 + 0.018*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.364 0.341 + 0.012*SL 0.350 + 0.009*SL 0.358 + 0.009*SL
tPHL 0.745 0.718 + 0.013*SL 0.730 + 0.010*SL 0.745 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-200 Samsung ASIC
OA321/OA321D2/OA321D4
3-OR and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA321D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.112 0.093 + 0.010*SL 0.096 + 0.009*SL 0.090 + 0.009*SL
tF 0.099 0.081 + 0.009*SL 0.085 + 0.008*SL 0.087 + 0.008*SL
tPLH 0.530 0.515 + 0.008*SL 0.524 + 0.006*SL 0.544 + 0.004*SL
tPHL 0.584 0.568 + 0.008*SL 0.577 + 0.006*SL 0.599 + 0.005*SL
B to Y tR 0.113 0.093 + 0.010*SL 0.097 + 0.009*SL 0.090 + 0.009*SL
tF 0.100 0.081 + 0.009*SL 0.087 + 0.008*SL 0.087 + 0.008*SL
tPLH 0.573 0.557 + 0.008*SL 0.566 + 0.006*SL 0.586 + 0.004*SL
tPHL 0.652 0.636 + 0.008*SL 0.645 + 0.006*SL 0.667 + 0.005*SL
C to Y tR 0.112 0.093 + 0.010*SL 0.096 + 0.009*SL 0.090 + 0.009*SL
tF 0.101 0.083 + 0.009*SL 0.087 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.591 0.575 + 0.008*SL 0.585 + 0.006*SL 0.604 + 0.004*SL
tPHL 0.706 0.690 + 0.008*SL 0.699 + 0.006*SL 0.721 + 0.005*SL
D to Y tR 0.110 0.090 + 0.010*SL 0.096 + 0.009*SL 0.088 + 0.009*SL
tF 0.100 0.081 + 0.009*SL 0.087 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.497 0.482 + 0.008*SL 0.491 + 0.005*SL 0.510 + 0.004*SL
tPHL 0.691 0.675 + 0.008*SL 0.684 + 0.006*SL 0.706 + 0.005*SL
E to Y tR 0.110 0.091 + 0.010*SL 0.094 + 0.009*SL 0.088 + 0.009*SL
tF 0.102 0.083 + 0.010*SL 0.089 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.509 0.494 + 0.008*SL 0.503 + 0.005*SL 0.522 + 0.004*SL
tPHL 0.761 0.745 + 0.008*SL 0.754 + 0.006*SL 0.776 + 0.005*SL
F to Y tR 0.102 0.082 + 0.010*SL 0.086 + 0.009*SL 0.078 + 0.009*SL
tF 0.102 0.082 + 0.010*SL 0.090 + 0.008*SL 0.089 + 0.008*SL
tPLH 0.395 0.380 + 0.007*SL 0.388 + 0.005*SL 0.405 + 0.004*SL
tPHL 0.778 0.762 + 0.008*SL 0.771 + 0.006*SL 0.793 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-201 STDM110
OA322/OA322D2/OA322D4
3-OR and Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA322 OA322
ABCDEFG
0.8 0.9 0.9 0.9 1.1 0.9 0.9 3.00
OA322D2 OA322D2
ABCDEFG
0.9 0.9 0.9 0.9 1.1 0.9 0.9 4.00
OA322D4 OA322D4
ABCDEFG
0.8 0.9 0.9 0.9 1.1 0.9 0.9 4.67
D
EY
A
B
F
G
C
Truth Table
ABCDEFGY
000xxxx1
xxx00xx1
xxxxx001
Other States 0
STDM110 3-202 Samsung ASIC
OA322/OA322D2/OA322D4
3-OR and Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA322
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.822 0.599 + 0.111*SL 0.587 + 0.114*SL 0.577 + 0.116*SL
tF 0.743 0.492 + 0.126*SL 0.490 + 0.126*SL 0.494 + 0.126*SL
tPLH 0.298 0.188 + 0.055*SL 0.191 + 0.054*SL 0.195 + 0.054*SL
tPHL 0.471 0.349 + 0.061*SL 0.352 + 0.060*SL 0.355 + 0.060*SL
B to Y tR 0.824 0.599 + 0.112*SL 0.591 + 0.114*SL 0.584 + 0.115*SL
tF 0.828 0.575 + 0.127*SL 0.576 + 0.126*SL 0.579 + 0.126*SL
tPLH 0.344 0.234 + 0.055*SL 0.236 + 0.054*SL 0.242 + 0.054*SL
tPHL 0.540 0.418 + 0.061*SL 0.421 + 0.060*SL 0.424 + 0.060*SL
C to Y tR 0.820 0.595 + 0.113*SL 0.588 + 0.115*SL 0.584 + 0.115*SL
tF 0.910 0.657 + 0.126*SL 0.660 + 0.126*SL 0.662 + 0.125*SL
tPLH 0.361 0.251 + 0.055*SL 0.254 + 0.054*SL 0.259 + 0.054*SL
tPHL 0.591 0.467 + 0.062*SL 0.471 + 0.061*SL 0.475 + 0.060*SL
D to Y tR 0.610 0.468 + 0.071*SL 0.455 + 0.074*SL 0.440 + 0.076*SL
tF 0.836 0.584 + 0.126*SL 0.584 + 0.126*SL 0.583 + 0.126*SL
tPLH 0.271 0.200 + 0.036*SL 0.201 + 0.036*SL 0.202 + 0.035*SL
tPHL 0.589 0.464 + 0.063*SL 0.469 + 0.061*SL 0.475 + 0.061*SL
E to Y tR 0.603 0.457 + 0.073*SL 0.449 + 0.075*SL 0.439 + 0.076*SL
tF 0.912 0.661 + 0.126*SL 0.661 + 0.125*SL 0.662 + 0.125*SL
tPLH 0.287 0.216 + 0.035*SL 0.217 + 0.035*SL 0.218 + 0.035*SL
tPHL 0.656 0.532 + 0.062*SL 0.536 + 0.061*SL 0.541 + 0.060*SL
F to Y tR 0.651 0.510 + 0.071*SL 0.497 + 0.074*SL 0.480 + 0.076*SL
tF 0.836 0.585 + 0.125*SL 0.585 + 0.126*SL 0.584 + 0.126*SL
tPLH 0.293 0.221 + 0.036*SL 0.223 + 0.035*SL 0.225 + 0.035*SL
tPHL 0.608 0.482 + 0.063*SL 0.488 + 0.061*SL 0.494 + 0.061*SL
G to Y tR 0.644 0.500 + 0.072*SL 0.491 + 0.074*SL 0.481 + 0.076*SL
tF 0.912 0.661 + 0.126*SL 0.662 + 0.125*SL 0.662 + 0.125*SL
tPLH 0.303 0.232 + 0.036*SL 0.234 + 0.035*SL 0.236 + 0.035*SL
tPHL 0.670 0.546 + 0.062*SL 0.550 + 0.061*SL 0.555 + 0.060*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-203 STDM110
OA322/OA322D2/OA322D4
3-OR and Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA322D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.127 0.091 + 0.018*SL 0.092 + 0.018*SL 0.080 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.084 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.519 0.492 + 0.013*SL 0.506 + 0.010*SL 0.518 + 0.009*SL
tPHL 0.683 0.656 + 0.014*SL 0.669 + 0.011*SL 0.685 + 0.009*SL
B to Y tR 0.127 0.091 + 0.018*SL 0.092 + 0.018*SL 0.080 + 0.019*SL
tF 0.114 0.079 + 0.017*SL 0.086 + 0.016*SL 0.080 + 0.016*SL
tPLH 0.563 0.537 + 0.013*SL 0.550 + 0.010*SL 0.563 + 0.009*SL
tPHL 0.762 0.735 + 0.014*SL 0.748 + 0.011*SL 0.764 + 0.009*SL
C to Y tR 0.127 0.091 + 0.018*SL 0.092 + 0.018*SL 0.080 + 0.019*SL
tF 0.116 0.081 + 0.017*SL 0.088 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.581 0.554 + 0.013*SL 0.568 + 0.010*SL 0.580 + 0.009*SL
tPHL 0.822 0.794 + 0.014*SL 0.808 + 0.011*SL 0.824 + 0.009*SL
D to Y tR 0.119 0.083 + 0.018*SL 0.082 + 0.018*SL 0.072 + 0.019*SL
tF 0.114 0.079 + 0.017*SL 0.085 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.485 0.460 + 0.013*SL 0.472 + 0.010*SL 0.483 + 0.009*SL
tPHL 0.807 0.779 + 0.014*SL 0.793 + 0.011*SL 0.809 + 0.009*SL
E to Y tR 0.118 0.082 + 0.018*SL 0.082 + 0.018*SL 0.072 + 0.019*SL
tF 0.115 0.081 + 0.017*SL 0.086 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.503 0.478 + 0.013*SL 0.490 + 0.010*SL 0.501 + 0.009*SL
tPHL 0.891 0.863 + 0.014*SL 0.876 + 0.011*SL 0.893 + 0.009*SL
F to Y tR 0.120 0.084 + 0.018*SL 0.085 + 0.018*SL 0.073 + 0.019*SL
tF 0.114 0.079 + 0.018*SL 0.085 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.510 0.485 + 0.013*SL 0.497 + 0.010*SL 0.508 + 0.009*SL
tPHL 0.826 0.798 + 0.014*SL 0.812 + 0.011*SL 0.828 + 0.009*SL
G to Y tR 0.119 0.083 + 0.018*SL 0.083 + 0.018*SL 0.073 + 0.019*SL
tF 0.116 0.081 + 0.017*SL 0.088 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.522 0.496 + 0.013*SL 0.509 + 0.010*SL 0.520 + 0.009*SL
tPHL 0.900 0.872 + 0.014*SL 0.886 + 0.011*SL 0.902 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-204 Samsung ASIC
OA322/OA322D2/OA322D4
3-OR and Two 2-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA322D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.117 0.097 + 0.010*SL 0.102 + 0.009*SL 0.097 + 0.009*SL
tF 0.100 0.082 + 0.009*SL 0.086 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.571 0.555 + 0.008*SL 0.565 + 0.006*SL 0.587 + 0.005*SL
tPHL 0.706 0.690 + 0.008*SL 0.700 + 0.006*SL 0.721 + 0.005*SL
B to Y tR 0.118 0.099 + 0.010*SL 0.103 + 0.009*SL 0.096 + 0.009*SL
tF 0.102 0.084 + 0.009*SL 0.089 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.616 0.600 + 0.008*SL 0.609 + 0.006*SL 0.631 + 0.005*SL
tPHL 0.785 0.769 + 0.008*SL 0.778 + 0.006*SL 0.800 + 0.005*SL
C to Y tR 0.118 0.098 + 0.010*SL 0.102 + 0.009*SL 0.097 + 0.009*SL
tF 0.104 0.085 + 0.009*SL 0.091 + 0.008*SL 0.092 + 0.008*SL
tPLH 0.633 0.617 + 0.008*SL 0.627 + 0.006*SL 0.648 + 0.005*SL
tPHL 0.845 0.828 + 0.008*SL 0.838 + 0.006*SL 0.860 + 0.005*SL
D to Y tR 0.114 0.094 + 0.010*SL 0.099 + 0.009*SL 0.092 + 0.009*SL
tF 0.101 0.083 + 0.009*SL 0.087 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.529 0.513 + 0.008*SL 0.522 + 0.006*SL 0.543 + 0.005*SL
tPHL 0.829 0.813 + 0.008*SL 0.822 + 0.006*SL 0.844 + 0.005*SL
E to Y tR 0.115 0.094 + 0.010*SL 0.100 + 0.009*SL 0.093 + 0.009*SL
tF 0.104 0.086 + 0.009*SL 0.091 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.547 0.532 + 0.008*SL 0.541 + 0.006*SL 0.562 + 0.005*SL
tPHL 0.913 0.897 + 0.008*SL 0.906 + 0.006*SL 0.929 + 0.005*SL
F to Y tR 0.115 0.095 + 0.010*SL 0.100 + 0.009*SL 0.094 + 0.009*SL
tF 0.101 0.083 + 0.009*SL 0.087 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.550 0.534 + 0.008*SL 0.544 + 0.006*SL 0.565 + 0.005*SL
tPHL 0.849 0.833 + 0.008*SL 0.842 + 0.006*SL 0.864 + 0.005*SL
G to Y tR 0.115 0.095 + 0.010*SL 0.100 + 0.009*SL 0.094 + 0.009*SL
tF 0.104 0.085 + 0.010*SL 0.092 + 0.008*SL 0.092 + 0.008*SL
tPLH 0.562 0.546 + 0.008*SL 0.556 + 0.006*SL 0.577 + 0.005*SL
tPHL 0.922 0.906 + 0.008*SL 0.916 + 0.006*SL 0.938 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-205 STDM110
OA33/OA33D2/OA33D4
Two 3-ORs into 2-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL)
OA33 OA33D2 OA33D4
ABCDEFABCDEFABCDEF
0.8 0.8 0.9 0.8 0.8 0.9 0.8 0.8 0.9 0.8 0.8 0.9 0.8 0.8 0.9 0.8 0.8 0.9
Gate Count
OA33 OA33D2 OA33D4
2.33 3.33 4.00
D
F
Y
A
C
E
B
Truth Table
ABCDEFY
000xxx1
xxx0001
Other States 0
STDM110 3-206 Samsung ASIC
OA33/OA33D2/OA33D4
Two 3-ORs into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA33
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.671 0.450 + 0.111*SL 0.437 + 0.114*SL 0.424 + 0.115*SL
tF 0.645 0.413 + 0.116*SL 0.409 + 0.117*SL 0.411 + 0.117*SL
tPLH 0.270 0.164 + 0.053*SL 0.164 + 0.053*SL 0.166 + 0.053*SL
tPHL 0.436 0.316 + 0.060*SL 0.323 + 0.058*SL 0.329 + 0.057*SL
B to Y tR 0.672 0.448 + 0.112*SL 0.440 + 0.114*SL 0.432 + 0.115*SL
tF 0.721 0.487 + 0.117*SL 0.487 + 0.117*SL 0.489 + 0.117*SL
tPLH 0.315 0.208 + 0.054*SL 0.210 + 0.053*SL 0.212 + 0.053*SL
tPHL 0.502 0.384 + 0.059*SL 0.389 + 0.058*SL 0.395 + 0.057*SL
C to Y tR 0.668 0.443 + 0.113*SL 0.436 + 0.114*SL 0.431 + 0.115*SL
tF 0.796 0.562 + 0.117*SL 0.563 + 0.117*SL 0.565 + 0.116*SL
tPLH 0.333 0.225 + 0.054*SL 0.227 + 0.053*SL 0.229 + 0.053*SL
tPHL 0.550 0.430 + 0.060*SL 0.437 + 0.058*SL 0.443 + 0.057*SL
D to Y tR 0.740 0.515 + 0.113*SL 0.504 + 0.115*SL 0.495 + 0.116*SL
tF 0.645 0.412 + 0.116*SL 0.411 + 0.117*SL 0.410 + 0.117*SL
tPLH 0.323 0.216 + 0.054*SL 0.217 + 0.054*SL 0.219 + 0.053*SL
tPHL 0.465 0.345 + 0.060*SL 0.352 + 0.058*SL 0.359 + 0.057*SL
E to Y tR 0.743 0.516 + 0.113*SL 0.509 + 0.115*SL 0.503 + 0.116*SL
tF 0.720 0.486 + 0.117*SL 0.486 + 0.117*SL 0.486 + 0.117*SL
tPLH 0.368 0.260 + 0.054*SL 0.262 + 0.054*SL 0.265 + 0.053*SL
tPHL 0.531 0.412 + 0.059*SL 0.418 + 0.058*SL 0.423 + 0.057*SL
F to Y tR 0.740 0.512 + 0.114*SL 0.506 + 0.116*SL 0.502 + 0.116*SL
tF 0.797 0.563 + 0.117*SL 0.564 + 0.116*SL 0.564 + 0.116*SL
tPLH 0.388 0.280 + 0.054*SL 0.282 + 0.054*SL 0.284 + 0.053*SL
tPHL 0.582 0.462 + 0.060*SL 0.468 + 0.058*SL 0.475 + 0.057*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-207 STDM110
OA33/OA33D2/OA33D4
Two 3-ORs into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA33D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.125 0.088 + 0.018*SL 0.091 + 0.018*SL 0.079 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.080 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.466 0.440 + 0.013*SL 0.453 + 0.010*SL 0.467 + 0.009*SL
tPHL 0.616 0.589 + 0.014*SL 0.602 + 0.010*SL 0.617 + 0.009*SL
B to Y tR 0.125 0.089 + 0.018*SL 0.091 + 0.018*SL 0.080 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.510 0.484 + 0.013*SL 0.497 + 0.010*SL 0.510 + 0.009*SL
tPHL 0.691 0.664 + 0.014*SL 0.677 + 0.010*SL 0.692 + 0.009*SL
C to Y tR 0.125 0.089 + 0.018*SL 0.090 + 0.018*SL 0.080 + 0.019*SL
tF 0.112 0.078 + 0.017*SL 0.081 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.529 0.502 + 0.013*SL 0.516 + 0.010*SL 0.529 + 0.009*SL
tPHL 0.749 0.721 + 0.014*SL 0.735 + 0.011*SL 0.750 + 0.009*SL
D to Y tR 0.128 0.091 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.109 0.075 + 0.017*SL 0.079 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.517 0.490 + 0.013*SL 0.504 + 0.010*SL 0.517 + 0.009*SL
tPHL 0.648 0.621 + 0.014*SL 0.634 + 0.010*SL 0.649 + 0.009*SL
E to Y tR 0.128 0.092 + 0.018*SL 0.094 + 0.018*SL 0.081 + 0.019*SL
tF 0.110 0.075 + 0.017*SL 0.080 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.562 0.536 + 0.013*SL 0.549 + 0.010*SL 0.563 + 0.009*SL
tPHL 0.725 0.698 + 0.014*SL 0.711 + 0.010*SL 0.726 + 0.009*SL
F to Y tR 0.128 0.092 + 0.018*SL 0.093 + 0.018*SL 0.081 + 0.019*SL
tF 0.112 0.077 + 0.018*SL 0.083 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.581 0.554 + 0.013*SL 0.568 + 0.010*SL 0.581 + 0.009*SL
tPHL 0.783 0.756 + 0.014*SL 0.769 + 0.011*SL 0.784 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-208 Samsung ASIC
OA33/OA33D2/OA33D4
Two 3-ORs into 2-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA33D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.119 0.099 + 0.010*SL 0.103 + 0.009*SL 0.097 + 0.009*SL
tF 0.098 0.080 + 0.009*SL 0.084 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.519 0.503 + 0.008*SL 0.513 + 0.006*SL 0.535 + 0.005*SL
tPHL 0.644 0.628 + 0.008*SL 0.637 + 0.006*SL 0.658 + 0.005*SL
B to Y tR 0.118 0.098 + 0.010*SL 0.103 + 0.009*SL 0.097 + 0.009*SL
tF 0.099 0.079 + 0.010*SL 0.087 + 0.008*SL 0.085 + 0.008*SL
tPLH 0.563 0.547 + 0.008*SL 0.557 + 0.006*SL 0.579 + 0.004*SL
tPHL 0.718 0.702 + 0.008*SL 0.711 + 0.006*SL 0.733 + 0.005*SL
C to Y tR 0.118 0.098 + 0.010*SL 0.103 + 0.009*SL 0.097 + 0.009*SL
tF 0.101 0.081 + 0.010*SL 0.089 + 0.008*SL 0.087 + 0.008*SL
tPLH 0.582 0.566 + 0.008*SL 0.575 + 0.006*SL 0.597 + 0.004*SL
tPHL 0.776 0.760 + 0.008*SL 0.769 + 0.006*SL 0.791 + 0.005*SL
D to Y tR 0.119 0.099 + 0.010*SL 0.105 + 0.009*SL 0.100 + 0.009*SL
tF 0.097 0.078 + 0.010*SL 0.086 + 0.008*SL 0.084 + 0.008*SL
tPLH 0.571 0.555 + 0.008*SL 0.564 + 0.006*SL 0.587 + 0.005*SL
tPHL 0.676 0.660 + 0.008*SL 0.669 + 0.006*SL 0.690 + 0.005*SL
E to Y tR 0.120 0.101 + 0.010*SL 0.105 + 0.009*SL 0.099 + 0.009*SL
tF 0.099 0.080 + 0.009*SL 0.086 + 0.008*SL 0.086 + 0.008*SL
tPLH 0.617 0.600 + 0.008*SL 0.610 + 0.006*SL 0.632 + 0.005*SL
tPHL 0.752 0.736 + 0.008*SL 0.745 + 0.006*SL 0.767 + 0.005*SL
F to Y tR 0.120 0.101 + 0.010*SL 0.104 + 0.009*SL 0.099 + 0.009*SL
tF 0.100 0.081 + 0.009*SL 0.086 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.635 0.619 + 0.008*SL 0.628 + 0.006*SL 0.651 + 0.005*SL
tPHL 0.810 0.794 + 0.008*SL 0.803 + 0.006*SL 0.825 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-209 STDM110
OA331/OA331D2/OA331D4
Two 3-ORs into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA331 OA331
ABCDEFG
0.9 0.9 1.0 0.9 0.9 0.9 0.9 3.00
OA331D2 OA331D2
ABCDEFG
0.9 0.9 1.0 0.9 0.9 0.9 0.9 3.67
OA331D4 OA331D4
ABCDEFG
0.9 0.9 1.0 0.9 0.9 0.9 0.9 4.33
D
FY
A
B
G
C
E
Truth Table
ABCDEFGY
000xxxx1
xxx000x1
xxxxxx01
Other States 0
STDM110 3-210 Samsung ASIC
OA331/OA331D2/OA331D4
Two 3-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA331
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.701 0.477 + 0.112*SL 0.466 + 0.115*SL 0.456 + 0.116*SL
tF 0.681 0.458 + 0.112*SL 0.452 + 0.113*SL 0.456 + 0.113*SL
tPLH 0.289 0.182 + 0.053*SL 0.183 + 0.053*SL 0.185 + 0.053*SL
tPHL 0.415 0.302 + 0.056*SL 0.308 + 0.055*SL 0.313 + 0.054*SL
B to Y tR 0.703 0.478 + 0.112*SL 0.470 + 0.114*SL 0.464 + 0.115*SL
tF 0.755 0.530 + 0.112*SL 0.527 + 0.113*SL 0.531 + 0.113*SL
tPLH 0.334 0.226 + 0.054*SL 0.228 + 0.053*SL 0.231 + 0.053*SL
tPHL 0.477 0.366 + 0.056*SL 0.370 + 0.055*SL 0.375 + 0.054*SL
C to Y tR 0.700 0.473 + 0.113*SL 0.467 + 0.115*SL 0.463 + 0.115*SL
tF 0.827 0.602 + 0.112*SL 0.600 + 0.113*SL 0.605 + 0.112*SL
tPLH 0.352 0.244 + 0.054*SL 0.246 + 0.053*SL 0.249 + 0.053*SL
tPHL 0.523 0.410 + 0.056*SL 0.416 + 0.055*SL 0.422 + 0.054*SL
D to Y tR 0.790 0.565 + 0.113*SL 0.556 + 0.115*SL 0.551 + 0.116*SL
tF 0.680 0.457 + 0.111*SL 0.455 + 0.112*SL 0.453 + 0.112*SL
tPLH 0.363 0.256 + 0.054*SL 0.258 + 0.053*SL 0.260 + 0.053*SL
tPHL 0.467 0.354 + 0.056*SL 0.361 + 0.055*SL 0.367 + 0.054*SL
E to Y tR 0.794 0.568 + 0.113*SL 0.561 + 0.115*SL 0.557 + 0.115*SL
tF 0.755 0.530 + 0.112*SL 0.529 + 0.112*SL 0.529 + 0.112*SL
tPLH 0.408 0.301 + 0.054*SL 0.302 + 0.053*SL 0.305 + 0.053*SL
tPHL 0.531 0.419 + 0.056*SL 0.424 + 0.055*SL 0.429 + 0.054*SL
F to Y tR 0.792 0.564 + 0.114*SL 0.560 + 0.115*SL 0.557 + 0.115*SL
tF 0.831 0.607 + 0.112*SL 0.606 + 0.112*SL 0.605 + 0.112*SL
tPLH 0.428 0.321 + 0.054*SL 0.323 + 0.053*SL 0.326 + 0.053*SL
tPHL 0.580 0.467 + 0.056*SL 0.472 + 0.055*SL 0.479 + 0.054*SL
G to Y tR 0.455 0.390 + 0.033*SL 0.380 + 0.035*SL 0.366 + 0.037*SL
tF 0.830 0.607 + 0.112*SL 0.606 + 0.112*SL 0.606 + 0.112*SL
tPLH 0.193 0.156 + 0.018*SL 0.158 + 0.018*SL 0.160 + 0.018*SL
tPHL 0.599 0.486 + 0.057*SL 0.492 + 0.055*SL 0.499 + 0.054*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-211 STDM110
OA331/OA331D2/OA331D4
Two 3-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA331D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.128 0.091 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.112 0.077 + 0.018*SL 0.084 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.496 0.469 + 0.013*SL 0.483 + 0.010*SL 0.496 + 0.009*SL
tPHL 0.621 0.594 + 0.014*SL 0.607 + 0.011*SL 0.623 + 0.009*SL
B to Y tR 0.128 0.093 + 0.018*SL 0.093 + 0.018*SL 0.082 + 0.019*SL
tF 0.113 0.079 + 0.017*SL 0.083 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.540 0.513 + 0.013*SL 0.527 + 0.010*SL 0.541 + 0.009*SL
tPHL 0.693 0.665 + 0.014*SL 0.679 + 0.011*SL 0.695 + 0.009*SL
C to Y tR 0.128 0.092 + 0.018*SL 0.094 + 0.018*SL 0.082 + 0.019*SL
tF 0.114 0.080 + 0.017*SL 0.085 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.558 0.531 + 0.013*SL 0.545 + 0.010*SL 0.558 + 0.009*SL
tPHL 0.747 0.720 + 0.014*SL 0.733 + 0.011*SL 0.749 + 0.009*SL
D to Y tR 0.123 0.087 + 0.018*SL 0.088 + 0.018*SL 0.077 + 0.019*SL
tF 0.112 0.077 + 0.017*SL 0.082 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.567 0.541 + 0.013*SL 0.554 + 0.010*SL 0.566 + 0.009*SL
tPHL 0.673 0.645 + 0.014*SL 0.659 + 0.011*SL 0.674 + 0.009*SL
E to Y tR 0.123 0.087 + 0.018*SL 0.089 + 0.018*SL 0.077 + 0.019*SL
tF 0.113 0.078 + 0.017*SL 0.083 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.611 0.585 + 0.013*SL 0.598 + 0.010*SL 0.610 + 0.009*SL
tPHL 0.746 0.718 + 0.014*SL 0.732 + 0.011*SL 0.747 + 0.009*SL
F to Y tR 0.123 0.087 + 0.018*SL 0.089 + 0.018*SL 0.077 + 0.019*SL
tF 0.115 0.080 + 0.017*SL 0.086 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.632 0.606 + 0.013*SL 0.618 + 0.010*SL 0.630 + 0.009*SL
tPHL 0.804 0.776 + 0.014*SL 0.790 + 0.011*SL 0.806 + 0.009*SL
G to Y tR 0.113 0.077 + 0.018*SL 0.076 + 0.018*SL 0.067 + 0.019*SL
tF 0.115 0.080 + 0.017*SL 0.086 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.382 0.357 + 0.012*SL 0.368 + 0.010*SL 0.378 + 0.009*SL
tPHL 0.824 0.796 + 0.014*SL 0.810 + 0.011*SL 0.826 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-212 Samsung ASIC
OA331/OA331D2/OA331D4
Two 3-ORs into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA331D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.119 0.099 + 0.010*SL 0.104 + 0.009*SL 0.098 + 0.009*SL
tF 0.100 0.082 + 0.009*SL 0.087 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.543 0.527 + 0.008*SL 0.536 + 0.006*SL 0.559 + 0.005*SL
tPHL 0.644 0.628 + 0.008*SL 0.637 + 0.006*SL 0.659 + 0.005*SL
B to Y tR 0.119 0.098 + 0.010*SL 0.104 + 0.009*SL 0.098 + 0.009*SL
tF 0.102 0.082 + 0.010*SL 0.090 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.588 0.572 + 0.008*SL 0.581 + 0.006*SL 0.603 + 0.005*SL
tPHL 0.716 0.700 + 0.008*SL 0.709 + 0.006*SL 0.731 + 0.005*SL
C to Y tR 0.119 0.098 + 0.010*SL 0.105 + 0.009*SL 0.098 + 0.009*SL
tF 0.102 0.084 + 0.009*SL 0.088 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.606 0.589 + 0.008*SL 0.599 + 0.006*SL 0.621 + 0.005*SL
tPHL 0.770 0.754 + 0.008*SL 0.763 + 0.006*SL 0.786 + 0.005*SL
D to Y tR 0.120 0.099 + 0.011*SL 0.106 + 0.009*SL 0.100 + 0.009*SL
tF 0.100 0.081 + 0.010*SL 0.088 + 0.008*SL 0.087 + 0.008*SL
tPLH 0.611 0.595 + 0.008*SL 0.605 + 0.006*SL 0.627 + 0.005*SL
tPHL 0.696 0.680 + 0.008*SL 0.689 + 0.006*SL 0.711 + 0.005*SL
E to Y tR 0.121 0.102 + 0.010*SL 0.105 + 0.009*SL 0.100 + 0.009*SL
tF 0.100 0.082 + 0.009*SL 0.086 + 0.008*SL 0.089 + 0.008*SL
tPLH 0.656 0.639 + 0.008*SL 0.649 + 0.006*SL 0.672 + 0.005*SL
tPHL 0.768 0.752 + 0.008*SL 0.762 + 0.006*SL 0.784 + 0.005*SL
F to Y tR 0.121 0.102 + 0.010*SL 0.105 + 0.009*SL 0.100 + 0.009*SL
tF 0.102 0.084 + 0.009*SL 0.089 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.676 0.660 + 0.008*SL 0.670 + 0.006*SL 0.692 + 0.005*SL
tPHL 0.826 0.810 + 0.008*SL 0.820 + 0.006*SL 0.842 + 0.005*SL
G to Y tR 0.101 0.081 + 0.010*SL 0.085 + 0.009*SL 0.078 + 0.009*SL
tF 0.102 0.084 + 0.009*SL 0.089 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.404 0.389 + 0.007*SL 0.397 + 0.005*SL 0.414 + 0.004*SL
tPHL 0.847 0.830 + 0.008*SL 0.840 + 0.006*SL 0.862 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-213 STDM110
OA332/OA332D2/OA332D4
Two 3-ORs and 2-OR into 3-NAND with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA332 OA332
ABCDEFGH
0.8 0.9 0.9 0.8 0.9 0.9 0.8 0.9 3.33
OA332D2 OA332D2
ABCDEFGH
0.8 0.9 0.9 0.8 0.9 0.9 0.8 0.9 4.33
OA332D4 OA332D4
ABCDEFGH
0.8 0.9 0.9 0.8 0.9 0.9 0.8 0.9 5.00
D
FY
A
C
G
H
E
B
Truth Table
ABCDEFGHY
000xxxxx1
xxx000xx1
xxxxxx001
Other States 0
STDM110 3-214 Samsung ASIC
OA332/OA332D2/OA332D4
Two 3-ORs and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA332
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.952 0.732 + 0.110*SL 0.718 + 0.114*SL 0.705 + 0.115*SL
tF 0.701 0.461 + 0.120*SL 0.458 + 0.121*SL 0.462 + 0.120*SL
tPLH 0.295 0.186 + 0.055*SL 0.188 + 0.054*SL 0.192 + 0.054*SL
tPHL 0.454 0.336 + 0.059*SL 0.339 + 0.058*SL 0.343 + 0.058*SL
B to Y tR 0.954 0.731 + 0.111*SL 0.722 + 0.114*SL 0.713 + 0.115*SL
tF 0.782 0.541 + 0.121*SL 0.541 + 0.120*SL 0.543 + 0.120*SL
tPLH 0.341 0.231 + 0.055*SL 0.234 + 0.054*SL 0.238 + 0.054*SL
tPHL 0.517 0.397 + 0.060*SL 0.402 + 0.059*SL 0.407 + 0.058*SL
C to Y tR 0.951 0.727 + 0.112*SL 0.718 + 0.114*SL 0.712 + 0.115*SL
tF 0.859 0.618 + 0.120*SL 0.620 + 0.120*SL 0.621 + 0.120*SL
tPLH 0.359 0.249 + 0.055*SL 0.252 + 0.054*SL 0.257 + 0.054*SL
tPHL 0.567 0.446 + 0.060*SL 0.452 + 0.059*SL 0.458 + 0.058*SL
D to Y tR 0.891 0.666 + 0.112*SL 0.657 + 0.115*SL 0.650 + 0.116*SL
tF 0.936 0.650 + 0.143*SL 0.650 + 0.143*SL 0.649 + 0.143*SL
tPLH 0.359 0.249 + 0.055*SL 0.252 + 0.054*SL 0.257 + 0.054*SL
tPHL 0.657 0.515 + 0.071*SL 0.521 + 0.070*SL 0.528 + 0.069*SL
E to Y tR 0.894 0.669 + 0.113*SL 0.662 + 0.114*SL 0.657 + 0.115*SL
tF 1.028 0.741 + 0.143*SL 0.742 + 0.143*SL 0.742 + 0.143*SL
tPLH 0.405 0.295 + 0.055*SL 0.297 + 0.054*SL 0.303 + 0.054*SL
tPHL 0.736 0.595 + 0.070*SL 0.600 + 0.069*SL 0.606 + 0.069*SL
F to Y tR 0.891 0.664 + 0.114*SL 0.659 + 0.115*SL 0.656 + 0.115*SL
tF 1.122 0.836 + 0.143*SL 0.838 + 0.143*SL 0.839 + 0.143*SL
tPLH 0.425 0.315 + 0.055*SL 0.318 + 0.054*SL 0.323 + 0.054*SL
tPHL 0.802 0.660 + 0.071*SL 0.666 + 0.069*SL 0.672 + 0.069*SL
G to Y tR 0.815 0.675 + 0.070*SL 0.661 + 0.073*SL 0.644 + 0.076*SL
tF 1.034 0.749 + 0.142*SL 0.750 + 0.142*SL 0.749 + 0.142*SL
tPLH 0.296 0.223 + 0.037*SL 0.226 + 0.036*SL 0.228 + 0.035*SL
tPHL 0.763 0.619 + 0.072*SL 0.626 + 0.070*SL 0.635 + 0.069*SL
H to Y tR 0.808 0.663 + 0.072*SL 0.655 + 0.074*SL 0.645 + 0.076*SL
tF 1.122 0.836 + 0.143*SL 0.838 + 0.143*SL 0.838 + 0.143*SL
tPLH 0.306 0.233 + 0.036*SL 0.235 + 0.036*SL 0.239 + 0.035*SL
tPHL 0.834 0.692 + 0.071*SL 0.698 + 0.070*SL 0.704 + 0.069*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-215 STDM110
OA332/OA332D2/OA332D4
Two 3-ORs and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA332D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.133 0.096 + 0.018*SL 0.099 + 0.018*SL 0.087 + 0.019*SL
tF 0.112 0.077 + 0.018*SL 0.084 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.527 0.500 + 0.014*SL 0.514 + 0.010*SL 0.529 + 0.009*SL
tPHL 0.659 0.632 + 0.014*SL 0.645 + 0.011*SL 0.660 + 0.009*SL
B to Y tR 0.132 0.094 + 0.019*SL 0.098 + 0.018*SL 0.087 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.084 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.573 0.545 + 0.014*SL 0.560 + 0.010*SL 0.574 + 0.009*SL
tPHL 0.735 0.708 + 0.014*SL 0.721 + 0.011*SL 0.737 + 0.009*SL
C to Y tR 0.132 0.095 + 0.019*SL 0.098 + 0.018*SL 0.087 + 0.019*SL
tF 0.114 0.080 + 0.017*SL 0.085 + 0.016*SL 0.080 + 0.016*SL
tPLH 0.591 0.563 + 0.014*SL 0.578 + 0.010*SL 0.592 + 0.009*SL
tPHL 0.794 0.766 + 0.014*SL 0.779 + 0.011*SL 0.795 + 0.009*SL
D to Y tR 0.135 0.099 + 0.018*SL 0.101 + 0.017*SL 0.087 + 0.019*SL
tF 0.117 0.081 + 0.018*SL 0.089 + 0.016*SL 0.083 + 0.016*SL
tPLH 0.583 0.556 + 0.014*SL 0.570 + 0.010*SL 0.585 + 0.009*SL
tPHL 0.877 0.849 + 0.014*SL 0.862 + 0.011*SL 0.879 + 0.009*SL
E to Y tR 0.134 0.098 + 0.018*SL 0.101 + 0.018*SL 0.089 + 0.019*SL
tF 0.118 0.084 + 0.017*SL 0.089 + 0.016*SL 0.084 + 0.016*SL
tPLH 0.628 0.601 + 0.014*SL 0.616 + 0.010*SL 0.630 + 0.009*SL
tPHL 0.968 0.940 + 0.014*SL 0.954 + 0.011*SL 0.970 + 0.009*SL
F to Y tR 0.134 0.098 + 0.018*SL 0.101 + 0.018*SL 0.089 + 0.019*SL
tF 0.121 0.087 + 0.017*SL 0.093 + 0.016*SL 0.086 + 0.016*SL
tPLH 0.649 0.621 + 0.014*SL 0.636 + 0.010*SL 0.651 + 0.009*SL
tPHL 1.044 1.016 + 0.014*SL 1.030 + 0.011*SL 1.047 + 0.009*SL
G to Y tR 0.125 0.089 + 0.018*SL 0.090 + 0.018*SL 0.078 + 0.019*SL
tF 0.119 0.084 + 0.017*SL 0.089 + 0.016*SL 0.086 + 0.016*SL
tPLH 0.516 0.490 + 0.013*SL 0.503 + 0.010*SL 0.515 + 0.009*SL
tPHL 0.994 0.965 + 0.014*SL 0.979 + 0.011*SL 0.996 + 0.009*SL
H to Y tR 0.124 0.088 + 0.018*SL 0.090 + 0.018*SL 0.078 + 0.019*SL
tF 0.120 0.084 + 0.018*SL 0.092 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.526 0.500 + 0.013*SL 0.513 + 0.010*SL 0.525 + 0.009*SL
tPHL 1.077 1.048 + 0.014*SL 1.063 + 0.011*SL 1.080 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-216 Samsung ASIC
OA332/OA332D2/OA332D4
Two 3-ORs and 2-OR into 3-NAND with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA332D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.124 0.105 + 0.010*SL 0.108 + 0.009*SL 0.103 + 0.009*SL
tF 0.100 0.082 + 0.009*SL 0.086 + 0.008*SL 0.088 + 0.008*SL
tPLH 0.580 0.563 + 0.008*SL 0.573 + 0.006*SL 0.597 + 0.005*SL
tPHL 0.686 0.670 + 0.008*SL 0.679 + 0.006*SL 0.701 + 0.005*SL
B to Y tR 0.124 0.104 + 0.010*SL 0.109 + 0.009*SL 0.103 + 0.009*SL
tF 0.102 0.083 + 0.010*SL 0.089 + 0.008*SL 0.090 + 0.008*SL
tPLH 0.625 0.608 + 0.008*SL 0.619 + 0.006*SL 0.642 + 0.005*SL
tPHL 0.761 0.745 + 0.008*SL 0.755 + 0.006*SL 0.777 + 0.005*SL
C to Y tR 0.124 0.105 + 0.010*SL 0.108 + 0.009*SL 0.103 + 0.009*SL
tF 0.103 0.084 + 0.010*SL 0.091 + 0.008*SL 0.091 + 0.008*SL
tPLH 0.643 0.626 + 0.008*SL 0.636 + 0.006*SL 0.660 + 0.005*SL
tPHL 0.820 0.803 + 0.008*SL 0.813 + 0.006*SL 0.836 + 0.005*SL
D to Y tR 0.125 0.105 + 0.010*SL 0.110 + 0.009*SL 0.105 + 0.009*SL
tF 0.105 0.087 + 0.009*SL 0.092 + 0.008*SL 0.095 + 0.008*SL
tPLH 0.636 0.620 + 0.008*SL 0.630 + 0.006*SL 0.653 + 0.005*SL
tPHL 0.908 0.892 + 0.008*SL 0.901 + 0.006*SL 0.925 + 0.005*SL
E to Y tR 0.126 0.106 + 0.010*SL 0.110 + 0.009*SL 0.104 + 0.009*SL
tF 0.109 0.090 + 0.009*SL 0.096 + 0.008*SL 0.096 + 0.008*SL
tPLH 0.682 0.665 + 0.008*SL 0.675 + 0.006*SL 0.699 + 0.005*SL
tPHL 0.999 0.982 + 0.008*SL 0.992 + 0.006*SL 1.016 + 0.005*SL
F to Y tR 0.126 0.106 + 0.010*SL 0.110 + 0.009*SL 0.104 + 0.009*SL
tF 0.110 0.092 + 0.009*SL 0.097 + 0.008*SL 0.098 + 0.008*SL
tPLH 0.702 0.685 + 0.008*SL 0.696 + 0.006*SL 0.719 + 0.005*SL
tPHL 1.075 1.058 + 0.008*SL 1.068 + 0.006*SL 1.092 + 0.005*SL
G to Y tR 0.121 0.101 + 0.010*SL 0.105 + 0.009*SL 0.099 + 0.009*SL
tF 0.108 0.089 + 0.009*SL 0.096 + 0.008*SL 0.097 + 0.008*SL
tPLH 0.557 0.541 + 0.008*SL 0.550 + 0.006*SL 0.573 + 0.005*SL
tPHL 1.025 1.008 + 0.008*SL 1.018 + 0.006*SL 1.042 + 0.005*SL
H to Y tR 0.120 0.099 + 0.010*SL 0.105 + 0.009*SL 0.099 + 0.009*SL
tF 0.109 0.090 + 0.009*SL 0.096 + 0.008*SL 0.099 + 0.008*SL
tPLH 0.567 0.551 + 0.008*SL 0.561 + 0.006*SL 0.583 + 0.005*SL
tPHL 1.107 1.091 + 0.008*SL 1.100 + 0.006*SL 1.125 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-217 STDM110
OA4111/OA4111D2
4-OR into 4-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
OA4111 OA4111
ABCDEFG
0.9 0.9 0.9 0.9 1.0 1.0 0.9 2.67
OA4111D2 OA4111D2
ABCDEFG
0.9 0.9 0.9 0.9 1.0 1.0 1.0 3.67
C
DY
A
B
F
G
E
Truth Table
ABCDEFGY
0000xxx1
xxxx0xx1
xxxxx0x1
xxxxxx01
Other States 0
STDM110 3-218 Samsung ASIC
OA4111/OA4111D2
4-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA4111
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.899 0.590 + 0.154*SL 0.582 + 0.157*SL 0.588 + 0.156*SL
tF 0.726 0.461 + 0.132*SL 0.455 + 0.134*SL 0.462 + 0.133*SL
tPLH 0.384 0.242 + 0.071*SL 0.243 + 0.071*SL 0.245 + 0.070*SL
tPHL 0.376 0.250 + 0.063*SL 0.251 + 0.063*SL 0.253 + 0.063*SL
B to Y tR 0.916 0.609 + 0.153*SL 0.605 + 0.154*SL 0.603 + 0.155*SL
tF 0.815 0.549 + 0.133*SL 0.545 + 0.134*SL 0.553 + 0.133*SL
tPLH 0.460 0.317 + 0.072*SL 0.319 + 0.071*SL 0.322 + 0.070*SL
tPHL 0.447 0.320 + 0.063*SL 0.322 + 0.063*SL 0.324 + 0.063*SL
C to Y tR 0.916 0.609 + 0.153*SL 0.605 + 0.154*SL 0.603 + 0.155*SL
tF 0.906 0.641 + 0.132*SL 0.637 + 0.133*SL 0.644 + 0.132*SL
tPLH 0.508 0.365 + 0.072*SL 0.368 + 0.071*SL 0.371 + 0.071*SL
tPHL 0.502 0.373 + 0.065*SL 0.377 + 0.063*SL 0.381 + 0.063*SL
D to Y tR 0.915 0.608 + 0.154*SL 0.605 + 0.154*SL 0.603 + 0.155*SL
tF 0.998 0.734 + 0.132*SL 0.730 + 0.133*SL 0.739 + 0.132*SL
tPLH 0.529 0.386 + 0.072*SL 0.389 + 0.071*SL 0.391 + 0.071*SL
tPHL 0.544 0.411 + 0.066*SL 0.418 + 0.065*SL 0.426 + 0.063*SL
E to Y tR 0.403 0.333 + 0.035*SL 0.329 + 0.036*SL 0.322 + 0.037*SL
tF 1.003 0.741 + 0.131*SL 0.740 + 0.131*SL 0.739 + 0.132*SL
tPLH 0.194 0.159 + 0.017*SL 0.160 + 0.017*SL 0.160 + 0.017*SL
tPHL 0.633 0.498 + 0.067*SL 0.507 + 0.065*SL 0.517 + 0.064*SL
F to Y tR 0.425 0.355 + 0.035*SL 0.349 + 0.036*SL 0.340 + 0.038*SL
tF 1.004 0.741 + 0.131*SL 0.741 + 0.131*SL 0.739 + 0.132*SL
tPLH 0.203 0.168 + 0.018*SL 0.169 + 0.018*SL 0.169 + 0.017*SL
tPHL 0.645 0.510 + 0.067*SL 0.519 + 0.065*SL 0.529 + 0.064*SL
G to Y tR 0.440 0.371 + 0.034*SL 0.364 + 0.036*SL 0.355 + 0.037*SL
tF 1.004 0.741 + 0.131*SL 0.741 + 0.131*SL 0.739 + 0.132*SL
tPLH 0.207 0.171 + 0.018*SL 0.172 + 0.018*SL 0.173 + 0.018*SL
tPHL 0.645 0.511 + 0.067*SL 0.519 + 0.065*SL 0.529 + 0.064*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-219 STDM110
OA4111/OA4111D2
4-OR into 4-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OA4111D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.126 0.089 + 0.018*SL 0.091 + 0.018*SL 0.081 + 0.019*SL
tF 0.115 0.082 + 0.016*SL 0.086 + 0.015*SL 0.084 + 0.015*SL
tPLH 0.569 0.543 + 0.013*SL 0.556 + 0.010*SL 0.568 + 0.009*SL
tPHL 0.590 0.562 + 0.014*SL 0.576 + 0.010*SL 0.593 + 0.009*SL
B to Y tR 0.126 0.090 + 0.018*SL 0.092 + 0.018*SL 0.080 + 0.019*SL
tF 0.116 0.083 + 0.016*SL 0.088 + 0.015*SL 0.086 + 0.015*SL
tPLH 0.644 0.618 + 0.013*SL 0.630 + 0.010*SL 0.643 + 0.009*SL
tPHL 0.673 0.646 + 0.014*SL 0.659 + 0.010*SL 0.676 + 0.009*SL
C to Y tR 0.126 0.089 + 0.018*SL 0.092 + 0.018*SL 0.081 + 0.019*SL
tF 0.119 0.085 + 0.017*SL 0.093 + 0.015*SL 0.087 + 0.015*SL
tPLH 0.692 0.666 + 0.013*SL 0.679 + 0.010*SL 0.692 + 0.009*SL
tPHL 0.740 0.712 + 0.014*SL 0.726 + 0.010*SL 0.744 + 0.009*SL
D to Y tR 0.126 0.089 + 0.019*SL 0.092 + 0.018*SL 0.081 + 0.019*SL
tF 0.120 0.087 + 0.016*SL 0.092 + 0.015*SL 0.090 + 0.015*SL
tPLH 0.713 0.687 + 0.013*SL 0.700 + 0.010*SL 0.713 + 0.009*SL
tPHL 0.792 0.765 + 0.014*SL 0.779 + 0.010*SL 0.797 + 0.009*SL
E to Y tR 0.111 0.076 + 0.018*SL 0.073 + 0.018*SL 0.066 + 0.019*SL
tF 0.122 0.089 + 0.017*SL 0.095 + 0.015*SL 0.090 + 0.015*SL
tPLH 0.377 0.352 + 0.012*SL 0.363 + 0.010*SL 0.372 + 0.009*SL
tPHL 0.883 0.855 + 0.014*SL 0.869 + 0.010*SL 0.887 + 0.009*SL
F to Y tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.066 + 0.019*SL
tF 0.120 0.087 + 0.017*SL 0.093 + 0.015*SL 0.090 + 0.015*SL
tPLH 0.388 0.363 + 0.012*SL 0.374 + 0.010*SL 0.383 + 0.009*SL
tPHL 0.894 0.867 + 0.014*SL 0.880 + 0.010*SL 0.898 + 0.009*SL
G to Y tR 0.109 0.074 + 0.018*SL 0.071 + 0.018*SL 0.064 + 0.019*SL
tF 0.120 0.086 + 0.017*SL 0.095 + 0.015*SL 0.090 + 0.015*SL
tPLH 0.393 0.370 + 0.012*SL 0.379 + 0.010*SL 0.388 + 0.009*SL
tPHL 0.898 0.870 + 0.014*SL 0.884 + 0.010*SL 0.902 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-220 Samsung ASIC
SCG1/SCG1D2
2-NAND and two (2-AND into 2-NOR)s into 3-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG1 SCG1
ABCDEFGH 4.00
0.8 0.9 0.8 0.8 0.8 0.8 0.8 0.9
SCG1D2 SCG1D2
ABCDEFGH 5.00
0.8 0.9 0.8 0.8 0.8 0.8 0.8 0.8
C
D
E
A
B
F
G
H
Y
Truth Table
ABCDEFGHY
11xxxxxx1
xx11xxxx1
xxxx1xxx1
xxxxx11x1
xxxxxxx11
Other States 0
Samsung ASIC 3-221 STDM110
SCG1/SCG1D2
2-NAND and two (2-AND into 2-NOR)s into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG1
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.216 0.120 + 0.048*SL 0.116 + 0.049*SL 0.111 + 0.050*SL
tF 0.258 0.142 + 0.058*SL 0.139 + 0.059*SL 0.136 + 0.059*SL
tPLH 0.254 0.206 + 0.024*SL 0.211 + 0.023*SL 0.214 + 0.022*SL
tPHL 0.267 0.209 + 0.029*SL 0.211 + 0.028*SL 0.212 + 0.028*SL
B to Y tR 0.216 0.120 + 0.048*SL 0.116 + 0.049*SL 0.111 + 0.050*SL
tF 0.260 0.144 + 0.058*SL 0.141 + 0.059*SL 0.138 + 0.059*SL
tPLH 0.251 0.203 + 0.024*SL 0.209 + 0.023*SL 0.211 + 0.022*SL
tPHL 0.290 0.231 + 0.029*SL 0.234 + 0.028*SL 0.235 + 0.028*SL
C to Y tR 0.247 0.155 + 0.046*SL 0.153 + 0.046*SL 0.147 + 0.047*SL
tF 0.276 0.161 + 0.058*SL 0.159 + 0.058*SL 0.154 + 0.059*SL
tPLH 0.336 0.288 + 0.024*SL 0.296 + 0.022*SL 0.300 + 0.022*SL
tPHL 0.337 0.274 + 0.031*SL 0.282 + 0.029*SL 0.288 + 0.029*SL
D to Y tR 0.247 0.156 + 0.046*SL 0.152 + 0.046*SL 0.146 + 0.047*SL
tF 0.278 0.163 + 0.057*SL 0.161 + 0.058*SL 0.157 + 0.059*SL
tPLH 0.332 0.284 + 0.024*SL 0.291 + 0.022*SL 0.296 + 0.022*SL
tPHL 0.355 0.293 + 0.031*SL 0.301 + 0.029*SL 0.307 + 0.029*SL
E to Y tR 0.236 0.144 + 0.046*SL 0.140 + 0.047*SL 0.134 + 0.048*SL
tF 0.278 0.163 + 0.057*SL 0.161 + 0.058*SL 0.157 + 0.058*SL
tPLH 0.318 0.272 + 0.023*SL 0.277 + 0.022*SL 0.280 + 0.022*SL
tPHL 0.396 0.333 + 0.031*SL 0.341 + 0.029*SL 0.347 + 0.029*SL
F to Y tR 0.272 0.178 + 0.047*SL 0.175 + 0.047*SL 0.169 + 0.048*SL
tF 0.271 0.154 + 0.058*SL 0.153 + 0.058*SL 0.150 + 0.059*SL
tPLH 0.346 0.298 + 0.024*SL 0.304 + 0.023*SL 0.309 + 0.022*SL
tPHL 0.340 0.279 + 0.031*SL 0.285 + 0.029*SL 0.290 + 0.029*SL
G to Y tR 0.272 0.180 + 0.046*SL 0.175 + 0.047*SL 0.169 + 0.048*SL
tF 0.272 0.156 + 0.058*SL 0.155 + 0.058*SL 0.152 + 0.059*SL
tPLH 0.340 0.292 + 0.024*SL 0.298 + 0.023*SL 0.303 + 0.022*SL
tPHL 0.357 0.295 + 0.031*SL 0.302 + 0.029*SL 0.307 + 0.029*SL
H to Y tR 0.262 0.168 + 0.047*SL 0.163 + 0.048*SL 0.158 + 0.049*SL
tF 0.272 0.156 + 0.058*SL 0.155 + 0.058*SL 0.152 + 0.059*SL
tPLH 0.331 0.284 + 0.023*SL 0.288 + 0.022*SL 0.291 + 0.022*SL
tPHL 0.402 0.340 + 0.031*SL 0.347 + 0.029*SL 0.352 + 0.029*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-222 Samsung ASIC
SCG1/SCG1D2
2-NAND and two (2-AND into 2-NOR)s into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG1D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.163 0.117 + 0.023*SL 0.116 + 0.023*SL 0.109 + 0.024*SL
tF 0.189 0.131 + 0.029*SL 0.130 + 0.029*SL 0.126 + 0.029*SL
tPLH 0.263 0.236 + 0.014*SL 0.244 + 0.012*SL 0.253 + 0.011*SL
tPHL 0.265 0.233 + 0.016*SL 0.239 + 0.015*SL 0.243 + 0.014*SL
B to Y tR 0.163 0.116 + 0.023*SL 0.115 + 0.024*SL 0.109 + 0.024*SL
tF 0.191 0.133 + 0.029*SL 0.133 + 0.029*SL 0.128 + 0.029*SL
tPLH 0.258 0.230 + 0.014*SL 0.238 + 0.012*SL 0.248 + 0.011*SL
tPHL 0.281 0.249 + 0.016*SL 0.255 + 0.015*SL 0.260 + 0.014*SL
C to Y tR 0.209 0.162 + 0.024*SL 0.163 + 0.023*SL 0.157 + 0.024*SL
tF 0.213 0.154 + 0.029*SL 0.156 + 0.029*SL 0.153 + 0.029*SL
tPLH 0.364 0.335 + 0.014*SL 0.343 + 0.012*SL 0.356 + 0.011*SL
tPHL 0.347 0.311 + 0.018*SL 0.320 + 0.016*SL 0.333 + 0.015*SL
D to Y tR 0.209 0.163 + 0.023*SL 0.164 + 0.023*SL 0.157 + 0.024*SL
tF 0.216 0.158 + 0.029*SL 0.159 + 0.029*SL 0.156 + 0.029*SL
tPLH 0.358 0.329 + 0.014*SL 0.337 + 0.012*SL 0.350 + 0.011*SL
tPHL 0.364 0.328 + 0.018*SL 0.336 + 0.016*SL 0.350 + 0.015*SL
E to Y tR 0.188 0.143 + 0.023*SL 0.141 + 0.023*SL 0.131 + 0.024*SL
tF 0.216 0.158 + 0.029*SL 0.160 + 0.029*SL 0.156 + 0.029*SL
tPLH 0.323 0.297 + 0.013*SL 0.302 + 0.012*SL 0.309 + 0.011*SL
tPHL 0.404 0.369 + 0.018*SL 0.377 + 0.016*SL 0.390 + 0.015*SL
F to Y tR 0.233 0.188 + 0.023*SL 0.187 + 0.023*SL 0.180 + 0.024*SL
tF 0.208 0.149 + 0.030*SL 0.150 + 0.029*SL 0.149 + 0.029*SL
tPLH 0.378 0.350 + 0.014*SL 0.357 + 0.012*SL 0.368 + 0.011*SL
tPHL 0.351 0.316 + 0.017*SL 0.324 + 0.016*SL 0.336 + 0.015*SL
G to Y tR 0.234 0.187 + 0.023*SL 0.188 + 0.023*SL 0.180 + 0.024*SL
tF 0.210 0.150 + 0.030*SL 0.152 + 0.029*SL 0.151 + 0.029*SL
tPLH 0.373 0.345 + 0.014*SL 0.352 + 0.012*SL 0.363 + 0.011*SL
tPHL 0.368 0.333 + 0.017*SL 0.341 + 0.016*SL 0.353 + 0.015*SL
H to Y tR 0.211 0.165 + 0.023*SL 0.163 + 0.023*SL 0.155 + 0.024*SL
tF 0.210 0.151 + 0.030*SL 0.152 + 0.029*SL 0.151 + 0.029*SL
tPLH 0.335 0.309 + 0.013*SL 0.314 + 0.012*SL 0.320 + 0.011*SL
tPHL 0.408 0.373 + 0.017*SL 0.380 + 0.016*SL 0.392 + 0.015*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-223 STDM110
SCG2/SCG2D2
Two 2-ANDs into 2-OR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG2 SCG2D2 SCG2 SCG2D2
ABCDABCD
0.8 0.8 0.9 0.8 0.8 0.8 0.9 0.8 2.00 2.33
C
D
A
BY
Truth Table
ABCDY
11xx1
xx111
Other States 0
STDM110 3-224 Samsung ASIC
SCG2/SCG2D2
Two 2-ANDs into 2-OR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG2
SCG2D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.174 0.099 + 0.038*SL 0.099 + 0.037*SL 0.094 + 0.038*SL
tF 0.162 0.095 + 0.034*SL 0.104 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.265 0.220 + 0.023*SL 0.234 + 0.019*SL 0.243 + 0.018*SL
tPHL 0.310 0.261 + 0.024*SL 0.278 + 0.020*SL 0.293 + 0.018*SL
B to Y tR 0.174 0.098 + 0.038*SL 0.100 + 0.037*SL 0.094 + 0.038*SL
tF 0.168 0.102 + 0.033*SL 0.110 + 0.031*SL 0.111 + 0.031*SL
tPLH 0.261 0.215 + 0.023*SL 0.230 + 0.019*SL 0.239 + 0.018*SL
tPHL 0.334 0.285 + 0.024*SL 0.303 + 0.020*SL 0.318 + 0.018*SL
C to Y tR 0.176 0.100 + 0.038*SL 0.102 + 0.037*SL 0.096 + 0.038*SL
tF 0.162 0.096 + 0.033*SL 0.104 + 0.031*SL 0.105 + 0.031*SL
tPLH 0.330 0.285 + 0.023*SL 0.299 + 0.019*SL 0.307 + 0.018*SL
tPHL 0.354 0.305 + 0.024*SL 0.323 + 0.020*SL 0.337 + 0.018*SL
D to Y tR 0.176 0.102 + 0.037*SL 0.101 + 0.037*SL 0.096 + 0.038*SL
tF 0.168 0.102 + 0.033*SL 0.111 + 0.031*SL 0.110 + 0.031*SL
tPLH 0.321 0.276 + 0.023*SL 0.290 + 0.019*SL 0.298 + 0.018*SL
tPHL 0.378 0.329 + 0.025*SL 0.346 + 0.020*SL 0.362 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.138 0.096 + 0.021*SL 0.104 + 0.019*SL 0.104 + 0.019*SL
tF 0.142 0.103 + 0.019*SL 0.114 + 0.016*SL 0.125 + 0.016*SL
tPLH 0.279 0.249 + 0.015*SL 0.263 + 0.011*SL 0.284 + 0.009*SL
tPHL 0.333 0.302 + 0.016*SL 0.317 + 0.012*SL 0.344 + 0.010*SL
B to Y tR 0.137 0.095 + 0.021*SL 0.103 + 0.019*SL 0.105 + 0.019*SL
tF 0.147 0.109 + 0.019*SL 0.120 + 0.016*SL 0.131 + 0.015*SL
tPLH 0.275 0.245 + 0.015*SL 0.259 + 0.011*SL 0.281 + 0.009*SL
tPHL 0.358 0.325 + 0.016*SL 0.341 + 0.012*SL 0.370 + 0.010*SL
C to Y tR 0.144 0.103 + 0.020*SL 0.110 + 0.018*SL 0.107 + 0.019*SL
tF 0.140 0.101 + 0.019*SL 0.112 + 0.016*SL 0.124 + 0.015*SL
tPLH 0.345 0.315 + 0.015*SL 0.330 + 0.011*SL 0.350 + 0.009*SL
tPHL 0.378 0.346 + 0.016*SL 0.361 + 0.012*SL 0.389 + 0.010*SL
D to Y tR 0.142 0.100 + 0.021*SL 0.108 + 0.019*SL 0.108 + 0.019*SL
tF 0.146 0.109 + 0.019*SL 0.119 + 0.016*SL 0.130 + 0.015*SL
tPLH 0.336 0.307 + 0.015*SL 0.321 + 0.011*SL 0.341 + 0.009*SL
tPHL 0.401 0.369 + 0.016*SL 0.385 + 0.012*SL 0.413 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-225 STDM110
SCG3/SCG3D2
Two 2-NANDs into 3-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG3 SCG3D2 SCG3 SCG3D2
ABCDEABCDE
0.8 0.9 0.8 0.9 1.0 0.8 0.9 0.8 0.8 2.2 2.67 3.33
A
B
Y
C
D
E
Truth Table
ABCDEY
11xxx1
xx11x1
xxxx01
Other States 0
STDM110 3-226 Samsung ASIC
SCG3/SCG3D2
Two 2-NANDs into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.212 0.119 + 0.047*SL 0.115 + 0.048*SL 0.110 + 0.049*SL
tF 0.259 0.142 + 0.058*SL 0.141 + 0.059*SL 0.137 + 0.059*SL
tPLH 0.255 0.208 + 0.024*SL 0.213 + 0.022*SL 0.216 + 0.022*SL
tPHL 0.273 0.214 + 0.029*SL 0.217 + 0.029*SL 0.219 + 0.028*SL
B to Y tR 0.213 0.119 + 0.047*SL 0.116 + 0.048*SL 0.110 + 0.049*SL
tF 0.260 0.144 + 0.058*SL 0.142 + 0.059*SL 0.138 + 0.059*SL
tPLH 0.251 0.204 + 0.024*SL 0.210 + 0.022*SL 0.212 + 0.022*SL
tPHL 0.292 0.233 + 0.029*SL 0.236 + 0.029*SL 0.238 + 0.028*SL
C to Y tR 0.235 0.141 + 0.047*SL 0.137 + 0.048*SL 0.132 + 0.049*SL
tF 0.258 0.142 + 0.058*SL 0.140 + 0.059*SL 0.137 + 0.059*SL
tPLH 0.270 0.224 + 0.023*SL 0.228 + 0.022*SL 0.230 + 0.022*SL
tPHL 0.285 0.226 + 0.030*SL 0.230 + 0.029*SL 0.232 + 0.028*SL
D to Y tR 0.236 0.142 + 0.047*SL 0.137 + 0.048*SL 0.132 + 0.049*SL
tF 0.260 0.144 + 0.058*SL 0.140 + 0.059*SL 0.138 + 0.059*SL
tPLH 0.266 0.220 + 0.023*SL 0.224 + 0.022*SL 0.226 + 0.022*SL
tPHL 0.303 0.244 + 0.030*SL 0.248 + 0.029*SL 0.250 + 0.028*SL
E to Y tR 0.271 0.182 + 0.044*SL 0.173 + 0.047*SL 0.162 + 0.048*SL
tF 0.265 0.150 + 0.057*SL 0.146 + 0.058*SL 0.141 + 0.059*SL
tPLH 0.187 0.142 + 0.023*SL 0.144 + 0.022*SL 0.145 + 0.022*SL
tPHL 0.176 0.117 + 0.030*SL 0.121 + 0.029*SL 0.123 + 0.028*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-227 STDM110
SCG3/SCG3D2
Two 2-NANDs into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG3D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.163 0.116 + 0.023*SL 0.115 + 0.023*SL 0.108 + 0.024*SL
tF 0.189 0.131 + 0.029*SL 0.131 + 0.029*SL 0.126 + 0.029*SL
tPLH 0.263 0.235 + 0.014*SL 0.243 + 0.012*SL 0.252 + 0.011*SL
tPHL 0.265 0.233 + 0.016*SL 0.238 + 0.015*SL 0.243 + 0.014*SL
B to Y tR 0.162 0.116 + 0.023*SL 0.115 + 0.024*SL 0.109 + 0.024*SL
tF 0.191 0.133 + 0.029*SL 0.133 + 0.029*SL 0.128 + 0.029*SL
tPLH 0.257 0.230 + 0.014*SL 0.238 + 0.012*SL 0.247 + 0.011*SL
tPHL 0.281 0.249 + 0.016*SL 0.254 + 0.015*SL 0.260 + 0.014*SL
C to Y tR 0.188 0.142 + 0.023*SL 0.141 + 0.023*SL 0.132 + 0.024*SL
tF 0.189 0.131 + 0.029*SL 0.131 + 0.029*SL 0.127 + 0.029*SL
tPLH 0.286 0.260 + 0.013*SL 0.266 + 0.012*SL 0.273 + 0.011*SL
tPHL 0.283 0.250 + 0.016*SL 0.256 + 0.015*SL 0.263 + 0.014*SL
D to Y tR 0.188 0.142 + 0.023*SL 0.140 + 0.023*SL 0.132 + 0.024*SL
tF 0.191 0.133 + 0.029*SL 0.133 + 0.029*SL 0.129 + 0.029*SL
tPLH 0.281 0.255 + 0.013*SL 0.261 + 0.012*SL 0.269 + 0.011*SL
tPHL 0.298 0.265 + 0.016*SL 0.271 + 0.015*SL 0.278 + 0.014*SL
E to Y tR 0.214 0.172 + 0.021*SL 0.165 + 0.023*SL 0.151 + 0.024*SL
tF 0.191 0.134 + 0.028*SL 0.132 + 0.029*SL 0.128 + 0.029*SL
tPLH 0.155 0.131 + 0.012*SL 0.135 + 0.011*SL 0.137 + 0.011*SL
tPHL 0.137 0.104 + 0.016*SL 0.111 + 0.015*SL 0.116 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-228 Samsung ASIC
SCG4/SCG4D2
Two (two 2-ANDs into 2-NOR)s into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG4 SCG4
ABCDEFGH 3.67
0.8 0.8 0.9 0.8 0.8 0.8 0.8 0.8
SCG4D2 SCG4D2
ABCDEFGH 4.67
0.8 0.8 0.8 0.8 0.8 0.8 0.7 0.8
C
D
A
B
G
H
E
F
Y
Truth Table
ABCDEFGHY
11xxxxxx1
xx11xxxx1
xxxx11xx1
xxxxxx111
Other States 0
Samsung ASIC 3-229 STDM110
SCG4/SCG4D2
Two (two 2-ANDs into 2-NOR)s into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.184 0.109 + 0.037*SL 0.112 + 0.037*SL 0.106 + 0.037*SL
tF 0.204 0.122 + 0.041*SL 0.128 + 0.040*SL 0.128 + 0.040*SL
tPLH 0.287 0.243 + 0.022*SL 0.256 + 0.019*SL 0.265 + 0.018*SL
tPHL 0.335 0.282 + 0.026*SL 0.297 + 0.023*SL 0.310 + 0.021*SL
B to Y tR 0.185 0.112 + 0.037*SL 0.110 + 0.037*SL 0.106 + 0.037*SL
tF 0.208 0.126 + 0.041*SL 0.132 + 0.039*SL 0.131 + 0.040*SL
tPLH 0.283 0.238 + 0.022*SL 0.251 + 0.019*SL 0.261 + 0.018*SL
tPHL 0.355 0.302 + 0.026*SL 0.318 + 0.023*SL 0.331 + 0.021*SL
C to Y tR 0.187 0.112 + 0.037*SL 0.115 + 0.037*SL 0.108 + 0.038*SL
tF 0.204 0.121 + 0.041*SL 0.128 + 0.040*SL 0.127 + 0.040*SL
tPLH 0.355 0.311 + 0.022*SL 0.323 + 0.019*SL 0.332 + 0.018*SL
tPHL 0.385 0.332 + 0.026*SL 0.347 + 0.023*SL 0.360 + 0.021*SL
D to Y tR 0.188 0.115 + 0.037*SL 0.113 + 0.037*SL 0.108 + 0.038*SL
tF 0.208 0.126 + 0.041*SL 0.132 + 0.039*SL 0.131 + 0.040*SL
tPLH 0.345 0.300 + 0.022*SL 0.313 + 0.019*SL 0.322 + 0.018*SL
tPHL 0.400 0.347 + 0.027*SL 0.363 + 0.023*SL 0.376 + 0.021*SL
E to Y tR 0.200 0.128 + 0.036*SL 0.127 + 0.037*SL 0.122 + 0.037*SL
tF 0.192 0.110 + 0.041*SL 0.113 + 0.040*SL 0.111 + 0.040*SL
tPLH 0.297 0.255 + 0.021*SL 0.265 + 0.019*SL 0.273 + 0.017*SL
tPHL 0.329 0.280 + 0.025*SL 0.290 + 0.022*SL 0.300 + 0.021*SL
F to Y tR 0.201 0.129 + 0.036*SL 0.128 + 0.036*SL 0.122 + 0.037*SL
tF 0.196 0.116 + 0.040*SL 0.117 + 0.040*SL 0.115 + 0.040*SL
tPLH 0.291 0.249 + 0.021*SL 0.259 + 0.019*SL 0.267 + 0.017*SL
tPHL 0.351 0.302 + 0.025*SL 0.312 + 0.022*SL 0.322 + 0.021*SL
G to Y tR 0.212 0.139 + 0.036*SL 0.139 + 0.036*SL 0.134 + 0.037*SL
tF 0.192 0.111 + 0.041*SL 0.114 + 0.040*SL 0.112 + 0.040*SL
tPLH 0.353 0.310 + 0.022*SL 0.321 + 0.019*SL 0.330 + 0.018*SL
tPHL 0.376 0.327 + 0.025*SL 0.337 + 0.022*SL 0.347 + 0.021*SL
H to Y tR 0.212 0.140 + 0.036*SL 0.140 + 0.036*SL 0.134 + 0.037*SL
tF 0.196 0.116 + 0.040*SL 0.118 + 0.040*SL 0.115 + 0.040*SL
tPLH 0.350 0.306 + 0.022*SL 0.317 + 0.019*SL 0.327 + 0.018*SL
tPHL 0.400 0.350 + 0.025*SL 0.361 + 0.022*SL 0.371 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-230 Samsung ASIC
SCG4/SCG4D2
Two (two 2-ANDs into 2-NOR)s into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.156 0.116 + 0.020*SL 0.121 + 0.019*SL 0.121 + 0.019*SL
tF 0.172 0.127 + 0.022*SL 0.135 + 0.020*SL 0.143 + 0.020*SL
tPLH 0.307 0.279 + 0.014*SL 0.291 + 0.011*SL 0.310 + 0.009*SL
tPHL 0.352 0.320 + 0.016*SL 0.332 + 0.013*SL 0.355 + 0.011*SL
B to Y tR 0.155 0.116 + 0.020*SL 0.120 + 0.019*SL 0.121 + 0.019*SL
tF 0.178 0.133 + 0.023*SL 0.142 + 0.020*SL 0.150 + 0.020*SL
tPLH 0.303 0.275 + 0.014*SL 0.287 + 0.011*SL 0.306 + 0.009*SL
tPHL 0.379 0.346 + 0.016*SL 0.358 + 0.013*SL 0.382 + 0.011*SL
C to Y tR 0.163 0.124 + 0.020*SL 0.128 + 0.019*SL 0.128 + 0.019*SL
tF 0.173 0.128 + 0.023*SL 0.137 + 0.020*SL 0.145 + 0.020*SL
tPLH 0.385 0.357 + 0.014*SL 0.369 + 0.011*SL 0.388 + 0.009*SL
tPHL 0.420 0.388 + 0.016*SL 0.400 + 0.013*SL 0.423 + 0.011*SL
D to Y tR 0.164 0.125 + 0.020*SL 0.130 + 0.018*SL 0.127 + 0.019*SL
tF 0.179 0.135 + 0.022*SL 0.143 + 0.020*SL 0.149 + 0.020*SL
tPLH 0.381 0.353 + 0.014*SL 0.365 + 0.011*SL 0.384 + 0.009*SL
tPHL 0.443 0.410 + 0.016*SL 0.423 + 0.013*SL 0.446 + 0.011*SL
E to Y tR 0.178 0.139 + 0.020*SL 0.144 + 0.019*SL 0.142 + 0.019*SL
tF 0.166 0.124 + 0.021*SL 0.127 + 0.020*SL 0.131 + 0.020*SL
tPLH 0.333 0.307 + 0.013*SL 0.316 + 0.011*SL 0.332 + 0.009*SL
tPHL 0.361 0.331 + 0.015*SL 0.341 + 0.012*SL 0.358 + 0.011*SL
F to Y tR 0.180 0.140 + 0.020*SL 0.145 + 0.018*SL 0.142 + 0.019*SL
tF 0.171 0.129 + 0.021*SL 0.133 + 0.020*SL 0.136 + 0.020*SL
tPLH 0.329 0.303 + 0.013*SL 0.312 + 0.011*SL 0.328 + 0.009*SL
tPHL 0.387 0.356 + 0.015*SL 0.367 + 0.013*SL 0.385 + 0.011*SL
G to Y tR 0.196 0.157 + 0.019*SL 0.161 + 0.018*SL 0.160 + 0.019*SL
tF 0.167 0.124 + 0.021*SL 0.128 + 0.020*SL 0.132 + 0.020*SL
tPLH 0.403 0.376 + 0.013*SL 0.385 + 0.011*SL 0.403 + 0.010*SL
tPHL 0.429 0.399 + 0.015*SL 0.409 + 0.013*SL 0.427 + 0.011*SL
H to Y tR 0.195 0.157 + 0.019*SL 0.161 + 0.018*SL 0.159 + 0.019*SL
tF 0.171 0.129 + 0.021*SL 0.133 + 0.020*SL 0.136 + 0.020*SL
tPLH 0.398 0.371 + 0.013*SL 0.381 + 0.011*SL 0.399 + 0.010*SL
tPHL 0.451 0.420 + 0.015*SL 0.431 + 0.013*SL 0.449 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-231 STDM110
SCG5/SCG5D2
Three 2-ANDs into 3-OR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG5 SCG5
ABCDEF 3.00
0.7 0.7 0.7 0.8 0.7 0.8
SCG5D2 SCG5D2
ABCDEF 3.33
0.7 0.7 0.7 0.8 0.7 0.8
A
B
Y
C
D
E
F
Truth Table
ABCDEF Y
11xxxx1
xx11xx1
xxxx111
Other States 0
STDM110 3-232 Samsung ASIC
SCG5/SCG5D2
Three 2-ANDs into 3-OR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG5
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.187 0.110 + 0.039*SL 0.115 + 0.037*SL 0.112 + 0.038*SL
tF 0.209 0.131 + 0.039*SL 0.148 + 0.035*SL 0.162 + 0.033*SL
tPLH 0.304 0.254 + 0.025*SL 0.272 + 0.020*SL 0.287 + 0.018*SL
tPHL 0.398 0.337 + 0.031*SL 0.361 + 0.025*SL 0.387 + 0.021*SL
B to Y tR 0.186 0.109 + 0.039*SL 0.115 + 0.037*SL 0.112 + 0.038*SL
tF 0.217 0.140 + 0.039*SL 0.157 + 0.035*SL 0.169 + 0.033*SL
tPLH 0.297 0.248 + 0.025*SL 0.266 + 0.020*SL 0.281 + 0.018*SL
tPHL 0.424 0.362 + 0.031*SL 0.387 + 0.025*SL 0.413 + 0.021*SL
C to Y tR 0.197 0.121 + 0.038*SL 0.124 + 0.037*SL 0.120 + 0.037*SL
tF 0.213 0.134 + 0.039*SL 0.152 + 0.035*SL 0.165 + 0.033*SL
tPLH 0.397 0.347 + 0.025*SL 0.366 + 0.021*SL 0.381 + 0.019*SL
tPHL 0.531 0.470 + 0.031*SL 0.494 + 0.025*SL 0.520 + 0.021*SL
D to Y tR 0.197 0.122 + 0.038*SL 0.124 + 0.037*SL 0.120 + 0.037*SL
tF 0.220 0.142 + 0.039*SL 0.160 + 0.034*SL 0.170 + 0.033*SL
tPLH 0.393 0.342 + 0.025*SL 0.362 + 0.021*SL 0.377 + 0.019*SL
tPHL 0.560 0.498 + 0.031*SL 0.523 + 0.025*SL 0.549 + 0.021*SL
E to Y tR 0.205 0.128 + 0.039*SL 0.135 + 0.037*SL 0.130 + 0.038*SL
tF 0.213 0.135 + 0.039*SL 0.152 + 0.035*SL 0.164 + 0.033*SL
tPLH 0.450 0.398 + 0.026*SL 0.418 + 0.021*SL 0.434 + 0.019*SL
tPHL 0.579 0.518 + 0.031*SL 0.542 + 0.025*SL 0.568 + 0.021*SL
F to Y tR 0.205 0.128 + 0.039*SL 0.135 + 0.037*SL 0.130 + 0.037*SL
tF 0.220 0.142 + 0.039*SL 0.159 + 0.035*SL 0.172 + 0.033*SL
tPLH 0.447 0.395 + 0.026*SL 0.415 + 0.021*SL 0.431 + 0.019*SL
tPHL 0.610 0.548 + 0.031*SL 0.572 + 0.025*SL 0.599 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-233 STDM110
SCG5/SCG5D2
Three 2-ANDs into 3-OR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.149 0.106 + 0.022*SL 0.116 + 0.019*SL 0.123 + 0.019*SL
tF 0.188 0.143 + 0.022*SL 0.156 + 0.019*SL 0.181 + 0.017*SL
tPLH 0.315 0.282 + 0.016*SL 0.299 + 0.012*SL 0.326 + 0.010*SL
tPHL 0.432 0.392 + 0.020*SL 0.413 + 0.015*SL 0.450 + 0.012*SL
B to Y tR 0.149 0.106 + 0.022*SL 0.116 + 0.019*SL 0.121 + 0.019*SL
tF 0.196 0.151 + 0.022*SL 0.164 + 0.019*SL 0.189 + 0.017*SL
tPLH 0.309 0.277 + 0.016*SL 0.293 + 0.012*SL 0.320 + 0.010*SL
tPHL 0.458 0.417 + 0.020*SL 0.438 + 0.015*SL 0.477 + 0.012*SL
C to Y tR 0.161 0.119 + 0.021*SL 0.127 + 0.019*SL 0.132 + 0.019*SL
tF 0.189 0.144 + 0.023*SL 0.159 + 0.019*SL 0.182 + 0.017*SL
tPLH 0.409 0.376 + 0.017*SL 0.394 + 0.012*SL 0.421 + 0.010*SL
tPHL 0.567 0.527 + 0.020*SL 0.547 + 0.015*SL 0.585 + 0.012*SL
D to Y tR 0.161 0.118 + 0.021*SL 0.127 + 0.019*SL 0.132 + 0.019*SL
tF 0.197 0.153 + 0.022*SL 0.165 + 0.019*SL 0.190 + 0.017*SL
tPLH 0.406 0.372 + 0.017*SL 0.390 + 0.012*SL 0.418 + 0.010*SL
tPHL 0.595 0.554 + 0.020*SL 0.576 + 0.015*SL 0.614 + 0.012*SL
E to Y tR 0.169 0.125 + 0.022*SL 0.137 + 0.019*SL 0.143 + 0.019*SL
tF 0.189 0.145 + 0.022*SL 0.157 + 0.019*SL 0.183 + 0.017*SL
tPLH 0.464 0.430 + 0.017*SL 0.448 + 0.013*SL 0.477 + 0.010*SL
tPHL 0.615 0.575 + 0.020*SL 0.596 + 0.015*SL 0.633 + 0.012*SL
F to Y tR 0.169 0.126 + 0.022*SL 0.136 + 0.019*SL 0.142 + 0.019*SL
tF 0.196 0.150 + 0.023*SL 0.167 + 0.019*SL 0.190 + 0.017*SL
tPLH 0.461 0.427 + 0.017*SL 0.445 + 0.013*SL 0.474 + 0.010*SL
tPHL 0.645 0.604 + 0.020*SL 0.625 + 0.015*SL 0.664 + 0.012*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-234 Samsung ASIC
SCG6/SCG6D2
2-AND into 2-OR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG6 SCG6D2 SCG6 SCG6D2
ABCABC 1.67 2.00
0.8 0.8 0.8 0.8 0.8 0.8
A
BY
C
Truth Table
ABC Y
11x 1
xx1 1
Other States 0
Samsung ASIC 3-235 STDM110
SCG6/SCG6D2
2-AND into 2-OR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG6
SCG6D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.166 0.092 + 0.037*SL 0.092 + 0.037*SL 0.085 + 0.038*SL
tF 0.155 0.085 + 0.035*SL 0.094 + 0.033*SL 0.093 + 0.033*SL
tPLH 0.264 0.220 + 0.022*SL 0.233 + 0.019*SL 0.240 + 0.018*SL
tPHL 0.269 0.221 + 0.024*SL 0.237 + 0.020*SL 0.249 + 0.018*SL
B to Y tR 0.165 0.090 + 0.037*SL 0.091 + 0.037*SL 0.084 + 0.038*SL
tF 0.158 0.089 + 0.035*SL 0.097 + 0.033*SL 0.097 + 0.033*SL
tPLH 0.257 0.213 + 0.022*SL 0.226 + 0.019*SL 0.234 + 0.018*SL
tPHL 0.287 0.239 + 0.024*SL 0.255 + 0.020*SL 0.268 + 0.018*SL
C to Y tR 0.151 0.078 + 0.037*SL 0.073 + 0.038*SL 0.068 + 0.039*SL
tF 0.158 0.089 + 0.035*SL 0.097 + 0.033*SL 0.097 + 0.033*SL
tPLH 0.261 0.221 + 0.020*SL 0.229 + 0.018*SL 0.232 + 0.018*SL
tPHL 0.329 0.281 + 0.024*SL 0.297 + 0.020*SL 0.310 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.131 0.090 + 0.021*SL 0.097 + 0.019*SL 0.096 + 0.019*SL
tF 0.126 0.087 + 0.020*SL 0.097 + 0.017*SL 0.106 + 0.016*SL
tPLH 0.280 0.251 + 0.015*SL 0.266 + 0.011*SL 0.286 + 0.009*SL
tPHL 0.285 0.254 + 0.016*SL 0.269 + 0.012*SL 0.294 + 0.010*SL
B to Y tR 0.129 0.088 + 0.021*SL 0.096 + 0.019*SL 0.097 + 0.019*SL
tF 0.130 0.090 + 0.020*SL 0.102 + 0.017*SL 0.110 + 0.016*SL
tPLH 0.274 0.245 + 0.015*SL 0.260 + 0.011*SL 0.280 + 0.009*SL
tPHL 0.303 0.271 + 0.016*SL 0.286 + 0.012*SL 0.312 + 0.010*SL
C to Y tR 0.112 0.074 + 0.019*SL 0.077 + 0.018*SL 0.068 + 0.019*SL
tF 0.130 0.092 + 0.019*SL 0.101 + 0.017*SL 0.110 + 0.016*SL
tPLH 0.263 0.238 + 0.013*SL 0.249 + 0.010*SL 0.260 + 0.009*SL
tPHL 0.345 0.313 + 0.016*SL 0.329 + 0.012*SL 0.355 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-236 Samsung ASIC
SCG7/SCG7D2
2-NAND and (2-AND into 2-NOR) into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG7 SCG7D2 SCG7 SCG7D2
ABCDEABCDE 3.00 3.33
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8
C
D
E
A
B
Y
Truth Table
ABCDEY
11xxx1
xx11x1
xxxx11
Other States 0
Samsung ASIC 3-237 STDM110
SCG7/SCG7D2
2-NAND and (2-AND into 2-NOR) into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG7
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.162 0.089 + 0.037*SL 0.084 + 0.038*SL 0.079 + 0.039*SL
tF 0.171 0.089 + 0.041*SL 0.087 + 0.041*SL 0.083 + 0.042*SL
tPLH 0.226 0.186 + 0.020*SL 0.194 + 0.018*SL 0.198 + 0.018*SL
tPHL 0.236 0.191 + 0.023*SL 0.197 + 0.021*SL 0.200 + 0.021*SL
B to Y tR 0.163 0.089 + 0.037*SL 0.084 + 0.038*SL 0.080 + 0.039*SL
tF 0.172 0.090 + 0.041*SL 0.089 + 0.041*SL 0.084 + 0.042*SL
tPLH 0.220 0.180 + 0.020*SL 0.188 + 0.018*SL 0.192 + 0.018*SL
tPHL 0.253 0.207 + 0.023*SL 0.214 + 0.021*SL 0.217 + 0.021*SL
C to Y tR 0.193 0.119 + 0.037*SL 0.118 + 0.037*SL 0.112 + 0.038*SL
tF 0.184 0.101 + 0.041*SL 0.102 + 0.041*SL 0.098 + 0.042*SL
tPLH 0.296 0.255 + 0.021*SL 0.264 + 0.019*SL 0.270 + 0.018*SL
tPHL 0.286 0.237 + 0.024*SL 0.247 + 0.022*SL 0.254 + 0.021*SL
D to Y tR 0.195 0.121 + 0.037*SL 0.118 + 0.037*SL 0.112 + 0.038*SL
tF 0.186 0.105 + 0.041*SL 0.104 + 0.041*SL 0.100 + 0.041*SL
tPLH 0.290 0.248 + 0.021*SL 0.257 + 0.019*SL 0.263 + 0.018*SL
tPHL 0.303 0.254 + 0.025*SL 0.264 + 0.022*SL 0.272 + 0.021*SL
E to Y tR 0.179 0.106 + 0.037*SL 0.101 + 0.038*SL 0.095 + 0.039*SL
tF 0.186 0.104 + 0.041*SL 0.104 + 0.041*SL 0.100 + 0.041*SL
tPLH 0.287 0.249 + 0.019*SL 0.254 + 0.018*SL 0.256 + 0.018*SL
tPHL 0.345 0.296 + 0.025*SL 0.306 + 0.022*SL 0.314 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-238 Samsung ASIC
SCG7/SCG7D2
2-NAND and (2-AND into 2-NOR) into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG7D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.133 0.094 + 0.019*SL 0.097 + 0.019*SL 0.092 + 0.019*SL
tF 0.134 0.092 + 0.021*SL 0.094 + 0.020*SL 0.091 + 0.021*SL
tPLH 0.246 0.222 + 0.012*SL 0.231 + 0.010*SL 0.243 + 0.009*SL
tPHL 0.249 0.223 + 0.013*SL 0.230 + 0.011*SL 0.240 + 0.010*SL
B to Y tR 0.133 0.095 + 0.019*SL 0.098 + 0.018*SL 0.092 + 0.019*SL
tF 0.137 0.095 + 0.021*SL 0.098 + 0.020*SL 0.093 + 0.021*SL
tPLH 0.240 0.215 + 0.012*SL 0.225 + 0.010*SL 0.237 + 0.009*SL
tPHL 0.264 0.238 + 0.013*SL 0.246 + 0.011*SL 0.256 + 0.010*SL
C to Y tR 0.178 0.140 + 0.019*SL 0.141 + 0.019*SL 0.140 + 0.019*SL
tF 0.156 0.114 + 0.021*SL 0.117 + 0.021*SL 0.117 + 0.021*SL
tPLH 0.342 0.316 + 0.013*SL 0.325 + 0.011*SL 0.340 + 0.009*SL
tPHL 0.323 0.293 + 0.015*SL 0.303 + 0.012*SL 0.318 + 0.011*SL
D to Y tR 0.177 0.137 + 0.020*SL 0.142 + 0.019*SL 0.139 + 0.019*SL
tF 0.160 0.117 + 0.021*SL 0.119 + 0.021*SL 0.121 + 0.020*SL
tPLH 0.336 0.310 + 0.013*SL 0.319 + 0.011*SL 0.335 + 0.009*SL
tPHL 0.339 0.310 + 0.015*SL 0.320 + 0.012*SL 0.335 + 0.011*SL
E to Y tR 0.151 0.115 + 0.018*SL 0.115 + 0.018*SL 0.106 + 0.019*SL
tF 0.160 0.118 + 0.021*SL 0.120 + 0.021*SL 0.121 + 0.020*SL
tPLH 0.309 0.287 + 0.011*SL 0.293 + 0.010*SL 0.301 + 0.009*SL
tPHL 0.382 0.353 + 0.015*SL 0.362 + 0.012*SL 0.378 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-239 STDM110
SCG8/SCG8D2
2-AND into 3-OR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG8 SCG8D2 SCG8 SCG8D2
ABCDABCD
0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 2.00 2.33
A
BY
C
D
Truth Table
ABCDY
11xx1
xx1x1
xxx11
Other States 0
STDM110 3-240 Samsung ASIC
SCG8/SCG8D2
2-AND into 3-OR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG8
SCG8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.173 0.097 + 0.038*SL 0.101 + 0.037*SL 0.094 + 0.038*SL
tF 0.189 0.111 + 0.039*SL 0.129 + 0.035*SL 0.140 + 0.033*SL
tPLH 0.296 0.250 + 0.023*SL 0.265 + 0.019*SL 0.276 + 0.018*SL
tPHL 0.335 0.277 + 0.029*SL 0.299 + 0.024*SL 0.322 + 0.021*SL
B to Y tR 0.174 0.098 + 0.038*SL 0.101 + 0.037*SL 0.095 + 0.038*SL
tF 0.196 0.118 + 0.039*SL 0.135 + 0.035*SL 0.146 + 0.033*SL
tPLH 0.291 0.245 + 0.023*SL 0.260 + 0.019*SL 0.271 + 0.018*SL
tPHL 0.358 0.300 + 0.029*SL 0.322 + 0.024*SL 0.346 + 0.021*SL
C to Y tR 0.164 0.090 + 0.037*SL 0.088 + 0.037*SL 0.081 + 0.038*SL
tF 0.198 0.120 + 0.039*SL 0.138 + 0.034*SL 0.148 + 0.033*SL
tPLH 0.319 0.276 + 0.021*SL 0.288 + 0.018*SL 0.294 + 0.018*SL
tPHL 0.456 0.398 + 0.029*SL 0.420 + 0.024*SL 0.444 + 0.021*SL
D to Y tR 0.171 0.097 + 0.037*SL 0.096 + 0.037*SL 0.089 + 0.038*SL
tF 0.198 0.121 + 0.039*SL 0.139 + 0.034*SL 0.148 + 0.033*SL
tPLH 0.340 0.296 + 0.022*SL 0.309 + 0.019*SL 0.316 + 0.018*SL
tPHL 0.472 0.413 + 0.029*SL 0.436 + 0.024*SL 0.459 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.138 0.094 + 0.022*SL 0.105 + 0.019*SL 0.110 + 0.019*SL
tF 0.166 0.121 + 0.022*SL 0.134 + 0.019*SL 0.158 + 0.017*SL
tPLH 0.316 0.285 + 0.015*SL 0.301 + 0.012*SL 0.324 + 0.010*SL
tPHL 0.368 0.330 + 0.019*SL 0.348 + 0.014*SL 0.384 + 0.011*SL
B to Y tR 0.139 0.096 + 0.021*SL 0.105 + 0.019*SL 0.110 + 0.019*SL
tF 0.172 0.128 + 0.022*SL 0.142 + 0.019*SL 0.164 + 0.017*SL
tPLH 0.311 0.280 + 0.015*SL 0.296 + 0.012*SL 0.319 + 0.010*SL
tPHL 0.391 0.352 + 0.019*SL 0.371 + 0.014*SL 0.407 + 0.011*SL
C to Y tR 0.129 0.090 + 0.019*SL 0.095 + 0.018*SL 0.089 + 0.019*SL
tF 0.173 0.129 + 0.022*SL 0.143 + 0.019*SL 0.165 + 0.017*SL
tPLH 0.327 0.299 + 0.014*SL 0.313 + 0.011*SL 0.330 + 0.009*SL
tPHL 0.490 0.452 + 0.019*SL 0.471 + 0.014*SL 0.506 + 0.011*SL
D to Y tR 0.135 0.097 + 0.019*SL 0.102 + 0.018*SL 0.096 + 0.019*SL
tF 0.172 0.127 + 0.023*SL 0.142 + 0.019*SL 0.165 + 0.017*SL
tPLH 0.348 0.319 + 0.014*SL 0.334 + 0.011*SL 0.353 + 0.009*SL
tPHL 0.506 0.468 + 0.019*SL 0.486 + 0.014*SL 0.522 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-241 STDM110
SCG9/SCG9D2
2-OR into 2-AND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG9 SCG9D2 SCG9 SCG9D2
ABCABC 2.00 2.33
0.7 0.8 0.8 0.7 0.8 0.8
Y
C
A
B
Truth Table
ABC Y
00x 0
xx0 0
Other States 1
STDM110 3-242 Samsung ASIC
SCG9/SCG9D2
2-OR into 2-AND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG9
SCG9D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.171 0.096 + 0.038*SL 0.098 + 0.037*SL 0.094 + 0.038*SL
tF 0.159 0.093 + 0.033*SL 0.101 + 0.031*SL 0.102 + 0.031*SL
tPLH 0.288 0.242 + 0.023*SL 0.257 + 0.019*SL 0.267 + 0.018*SL
tPHL 0.299 0.251 + 0.024*SL 0.268 + 0.020*SL 0.283 + 0.018*SL
B to Y tR 0.178 0.103 + 0.037*SL 0.104 + 0.037*SL 0.100 + 0.038*SL
tF 0.158 0.089 + 0.034*SL 0.101 + 0.031*SL 0.103 + 0.031*SL
tPLH 0.322 0.275 + 0.023*SL 0.291 + 0.020*SL 0.302 + 0.018*SL
tPHL 0.309 0.261 + 0.024*SL 0.278 + 0.020*SL 0.293 + 0.018*SL
C to Y tR 0.178 0.102 + 0.038*SL 0.106 + 0.037*SL 0.099 + 0.038*SL
tF 0.145 0.080 + 0.032*SL 0.086 + 0.031*SL 0.082 + 0.031*SL
tPLH 0.336 0.289 + 0.023*SL 0.305 + 0.020*SL 0.317 + 0.018*SL
tPHL 0.253 0.208 + 0.022*SL 0.223 + 0.019*SL 0.234 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.135 0.092 + 0.021*SL 0.102 + 0.019*SL 0.104 + 0.019*SL
tF 0.132 0.091 + 0.021*SL 0.104 + 0.017*SL 0.115 + 0.016*SL
tPLH 0.300 0.270 + 0.015*SL 0.285 + 0.011*SL 0.308 + 0.009*SL
tPHL 0.319 0.286 + 0.016*SL 0.302 + 0.013*SL 0.330 + 0.010*SL
B to Y tR 0.141 0.099 + 0.021*SL 0.108 + 0.019*SL 0.112 + 0.019*SL
tF 0.134 0.093 + 0.020*SL 0.105 + 0.017*SL 0.116 + 0.016*SL
tPLH 0.334 0.303 + 0.016*SL 0.319 + 0.012*SL 0.342 + 0.010*SL
tPHL 0.329 0.296 + 0.016*SL 0.312 + 0.013*SL 0.340 + 0.010*SL
C to Y tR 0.142 0.100 + 0.021*SL 0.109 + 0.019*SL 0.112 + 0.019*SL
tF 0.111 0.074 + 0.019*SL 0.083 + 0.017*SL 0.086 + 0.016*SL
tPLH 0.348 0.317 + 0.016*SL 0.333 + 0.012*SL 0.357 + 0.010*SL
tPHL 0.250 0.220 + 0.015*SL 0.235 + 0.011*SL 0.256 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-243 STDM110
SCG10/SCG10D2
Two 2-ORs into 2-AND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG10 SCG10D2 SCG10 SCG10D2
ABCDABCD
0.7 0.8 0.7 0.7 0.7 0.8 0.7 0.7 2.33 2.67
C
D
Y
A
B
Truth Table
ABCDY
00xx0
xx000
Other States 1
STDM110 3-244 Samsung ASIC
SCG10/SCG10D2
Two 2-ORs into 2-AND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG10
SCG10D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.177 0.102 + 0.038*SL 0.103 + 0.037*SL 0.099 + 0.038*SL
tF 0.177 0.105 + 0.036*SL 0.118 + 0.033*SL 0.122 + 0.033*SL
tPLH 0.321 0.274 + 0.023*SL 0.290 + 0.020*SL 0.301 + 0.018*SL
tPHL 0.297 0.242 + 0.027*SL 0.264 + 0.022*SL 0.284 + 0.019*SL
B to Y tR 0.185 0.110 + 0.037*SL 0.111 + 0.037*SL 0.106 + 0.038*SL
tF 0.177 0.104 + 0.036*SL 0.118 + 0.033*SL 0.123 + 0.033*SL
tPLH 0.366 0.318 + 0.024*SL 0.335 + 0.020*SL 0.347 + 0.018*SL
tPHL 0.310 0.256 + 0.027*SL 0.278 + 0.022*SL 0.297 + 0.019*SL
C to Y tR 0.177 0.102 + 0.038*SL 0.103 + 0.037*SL 0.099 + 0.038*SL
tF 0.188 0.115 + 0.036*SL 0.129 + 0.033*SL 0.133 + 0.032*SL
tPLH 0.345 0.298 + 0.024*SL 0.314 + 0.020*SL 0.325 + 0.018*SL
tPHL 0.340 0.284 + 0.028*SL 0.307 + 0.022*SL 0.329 + 0.020*SL
D to Y tR 0.185 0.110 + 0.037*SL 0.112 + 0.037*SL 0.106 + 0.038*SL
tF 0.187 0.114 + 0.037*SL 0.129 + 0.033*SL 0.132 + 0.032*SL
tPLH 0.388 0.340 + 0.024*SL 0.357 + 0.020*SL 0.369 + 0.018*SL
tPHL 0.352 0.296 + 0.028*SL 0.319 + 0.022*SL 0.341 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.144 0.100 + 0.022*SL 0.111 + 0.019*SL 0.114 + 0.019*SL
tF 0.145 0.103 + 0.021*SL 0.117 + 0.018*SL 0.134 + 0.016*SL
tPLH 0.342 0.311 + 0.016*SL 0.326 + 0.012*SL 0.350 + 0.010*SL
tPHL 0.310 0.275 + 0.018*SL 0.293 + 0.013*SL 0.326 + 0.010*SL
B to Y tR 0.152 0.109 + 0.021*SL 0.119 + 0.019*SL 0.122 + 0.019*SL
tF 0.144 0.101 + 0.022*SL 0.117 + 0.018*SL 0.133 + 0.016*SL
tPLH 0.386 0.354 + 0.016*SL 0.370 + 0.012*SL 0.396 + 0.010*SL
tPHL 0.324 0.288 + 0.018*SL 0.307 + 0.013*SL 0.340 + 0.010*SL
C to Y tR 0.145 0.102 + 0.021*SL 0.111 + 0.019*SL 0.114 + 0.019*SL
tF 0.156 0.115 + 0.021*SL 0.127 + 0.018*SL 0.145 + 0.016*SL
tPLH 0.366 0.335 + 0.016*SL 0.351 + 0.012*SL 0.375 + 0.010*SL
tPHL 0.352 0.316 + 0.018*SL 0.335 + 0.014*SL 0.370 + 0.011*SL
D to Y tR 0.152 0.110 + 0.021*SL 0.119 + 0.019*SL 0.122 + 0.019*SL
tF 0.156 0.114 + 0.021*SL 0.129 + 0.018*SL 0.145 + 0.016*SL
tPLH 0.408 0.377 + 0.016*SL 0.393 + 0.012*SL 0.418 + 0.010*SL
tPHL 0.365 0.327 + 0.019*SL 0.348 + 0.014*SL 0.382 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-245 STDM110
SCG11/SCG11D2
Two 2-NORs into 3-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG11 SCG11D2 SCG11 SCG11D2
ABCDEABCDE 2.67 3.67
0.8 0.8 0.8 0.8 1.0 0.8 0.8 0.8 0.8 2.0
C
D
Y
A
B
E
Truth Table
ABCDEY
00xxx0
xx00x0
xxxx10
Other States 1
STDM110 3-246 Samsung ASIC
SCG11/SCG11D2
Two 2-NORs into 3-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG11
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.451 0.220 + 0.115*SL 0.218 + 0.116*SL 0.220 + 0.116*SL
tF 0.191 0.107 + 0.042*SL 0.110 + 0.041*SL 0.105 + 0.042*SL
tPLH 0.305 0.199 + 0.053*SL 0.201 + 0.052*SL 0.203 + 0.052*SL
tPHL 0.308 0.254 + 0.027*SL 0.268 + 0.024*SL 0.277 + 0.023*SL
B to Y tR 0.452 0.221 + 0.115*SL 0.219 + 0.116*SL 0.221 + 0.116*SL
tF 0.192 0.108 + 0.042*SL 0.110 + 0.041*SL 0.106 + 0.042*SL
tPLH 0.326 0.220 + 0.053*SL 0.222 + 0.052*SL 0.224 + 0.052*SL
tPHL 0.317 0.263 + 0.027*SL 0.277 + 0.024*SL 0.286 + 0.023*SL
C to Y tR 0.459 0.231 + 0.114*SL 0.227 + 0.115*SL 0.225 + 0.115*SL
tF 0.220 0.138 + 0.041*SL 0.137 + 0.041*SL 0.132 + 0.042*SL
tPLH 0.354 0.248 + 0.053*SL 0.251 + 0.052*SL 0.253 + 0.052*SL
tPHL 0.330 0.278 + 0.026*SL 0.288 + 0.024*SL 0.296 + 0.023*SL
D to Y tR 0.460 0.232 + 0.114*SL 0.227 + 0.115*SL 0.225 + 0.115*SL
tF 0.220 0.138 + 0.041*SL 0.137 + 0.041*SL 0.132 + 0.042*SL
tPLH 0.375 0.269 + 0.053*SL 0.271 + 0.052*SL 0.273 + 0.052*SL
tPHL 0.338 0.286 + 0.026*SL 0.296 + 0.024*SL 0.304 + 0.023*SL
E to Y tR 0.464 0.239 + 0.113*SL 0.230 + 0.115*SL 0.226 + 0.115*SL
tF 0.241 0.164 + 0.038*SL 0.155 + 0.040*SL 0.143 + 0.042*SL
tPLH 0.290 0.184 + 0.053*SL 0.186 + 0.052*SL 0.187 + 0.052*SL
tPHL 0.181 0.134 + 0.024*SL 0.137 + 0.023*SL 0.140 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-247 STDM110
SCG11/SCG11D2
Two 2-NORs into 3-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG11D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.309 0.195 + 0.057*SL 0.192 + 0.058*SL 0.190 + 0.058*SL
tF 0.156 0.111 + 0.023*SL 0.118 + 0.021*SL 0.121 + 0.021*SL
tPLH 0.266 0.213 + 0.026*SL 0.212 + 0.026*SL 0.215 + 0.026*SL
tPHL 0.324 0.290 + 0.017*SL 0.304 + 0.014*SL 0.325 + 0.012*SL
B to Y tR 0.311 0.198 + 0.057*SL 0.194 + 0.058*SL 0.191 + 0.058*SL
tF 0.157 0.112 + 0.023*SL 0.119 + 0.021*SL 0.120 + 0.021*SL
tPLH 0.285 0.233 + 0.026*SL 0.232 + 0.026*SL 0.234 + 0.026*SL
tPHL 0.333 0.299 + 0.017*SL 0.313 + 0.014*SL 0.335 + 0.012*SL
C to Y tR 0.320 0.208 + 0.056*SL 0.203 + 0.057*SL 0.198 + 0.058*SL
tF 0.191 0.148 + 0.021*SL 0.151 + 0.021*SL 0.150 + 0.021*SL
tPLH 0.319 0.265 + 0.027*SL 0.268 + 0.026*SL 0.272 + 0.026*SL
tPHL 0.357 0.326 + 0.016*SL 0.335 + 0.013*SL 0.353 + 0.012*SL
D to Y tR 0.321 0.209 + 0.056*SL 0.204 + 0.057*SL 0.199 + 0.058*SL
tF 0.191 0.148 + 0.021*SL 0.152 + 0.021*SL 0.150 + 0.021*SL
tPLH 0.337 0.283 + 0.027*SL 0.286 + 0.026*SL 0.290 + 0.026*SL
tPHL 0.365 0.333 + 0.016*SL 0.344 + 0.013*SL 0.361 + 0.012*SL
E to Y tR 0.324 0.213 + 0.055*SL 0.208 + 0.057*SL 0.199 + 0.058*SL
tF 0.195 0.159 + 0.018*SL 0.153 + 0.020*SL 0.139 + 0.021*SL
tPLH 0.227 0.172 + 0.027*SL 0.175 + 0.026*SL 0.178 + 0.026*SL
tPHL 0.149 0.123 + 0.013*SL 0.129 + 0.012*SL 0.133 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-248 Samsung ASIC
SCG12/SCG12D2
2-NAND into 2-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG12 SCG12D2 SCG12 SCG12D2
ABCABC 1.67 2.33
0.8 0.9 1.0 0.8 0.9 2.1
A
BY
C
Truth Table
ABC Y
110 1
Other States 0
Samsung ASIC 3-249 STDM110
SCG12/SCG12D2
2-NAND into 2-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG12
SCG12D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.287 0.134 + 0.076*SL 0.129 + 0.078*SL 0.123 + 0.078*SL
tF 0.133 0.068 + 0.033*SL 0.065 + 0.033*SL 0.062 + 0.034*SL
tPLH 0.267 0.194 + 0.037*SL 0.198 + 0.036*SL 0.199 + 0.035*SL
tPHL 0.225 0.184 + 0.020*SL 0.193 + 0.018*SL 0.197 + 0.018*SL
B to Y tR 0.287 0.134 + 0.076*SL 0.129 + 0.078*SL 0.123 + 0.078*SL
tF 0.134 0.068 + 0.033*SL 0.068 + 0.033*SL 0.064 + 0.034*SL
tPLH 0.263 0.190 + 0.037*SL 0.194 + 0.036*SL 0.196 + 0.035*SL
tPHL 0.243 0.202 + 0.021*SL 0.211 + 0.018*SL 0.216 + 0.018*SL
C to Y tR 0.293 0.142 + 0.075*SL 0.134 + 0.077*SL 0.126 + 0.078*SL
tF 0.179 0.123 + 0.028*SL 0.111 + 0.031*SL 0.100 + 0.033*SL
tPLH 0.189 0.116 + 0.037*SL 0.121 + 0.036*SL 0.122 + 0.035*SL
tPHL 0.139 0.098 + 0.020*SL 0.108 + 0.018*SL 0.109 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.203 0.128 + 0.038*SL 0.126 + 0.038*SL 0.117 + 0.039*SL
tF 0.104 0.069 + 0.018*SL 0.074 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.259 0.219 + 0.020*SL 0.226 + 0.018*SL 0.231 + 0.018*SL
tPHL 0.234 0.208 + 0.013*SL 0.219 + 0.010*SL 0.231 + 0.009*SL
B to Y tR 0.203 0.127 + 0.038*SL 0.126 + 0.038*SL 0.117 + 0.039*SL
tF 0.109 0.076 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.254 0.214 + 0.020*SL 0.222 + 0.018*SL 0.227 + 0.018*SL
tPHL 0.250 0.225 + 0.013*SL 0.236 + 0.010*SL 0.248 + 0.009*SL
C to Y tR 0.205 0.131 + 0.037*SL 0.126 + 0.038*SL 0.117 + 0.039*SL
tF 0.145 0.117 + 0.014*SL 0.114 + 0.015*SL 0.098 + 0.016*SL
tPLH 0.145 0.103 + 0.021*SL 0.114 + 0.018*SL 0.117 + 0.018*SL
tPHL 0.110 0.085 + 0.012*SL 0.098 + 0.009*SL 0.104 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-250 Samsung ASIC
SCG13/SCG13D2
2-NOR into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG13 SCG13D2 SCG13 SCG13D2
ABCABC 1.67 2.33
0.8 0.8 1.1 0.8 0.8 2.4
Y
A
B
C
Truth Table
ABC Y
001 0
Other States 1
Samsung ASIC 3-251 STDM110
SCG13/SCG13D2
2-NOR into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG13
SCG13D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.157 0.083 + 0.037*SL 0.078 + 0.038*SL 0.072 + 0.039*SL
tF 0.197 0.113 + 0.042*SL 0.117 + 0.041*SL 0.114 + 0.041*SL
tPLH 0.209 0.171 + 0.019*SL 0.176 + 0.018*SL 0.177 + 0.018*SL
tPHL 0.296 0.245 + 0.025*SL 0.258 + 0.022*SL 0.267 + 0.021*SL
B to Y tR 0.158 0.084 + 0.037*SL 0.079 + 0.039*SL 0.075 + 0.039*SL
tF 0.197 0.114 + 0.042*SL 0.116 + 0.041*SL 0.113 + 0.041*SL
tPLH 0.230 0.192 + 0.019*SL 0.197 + 0.018*SL 0.198 + 0.018*SL
tPHL 0.306 0.255 + 0.025*SL 0.268 + 0.022*SL 0.277 + 0.021*SL
C to Y tR 0.201 0.133 + 0.034*SL 0.125 + 0.036*SL 0.113 + 0.038*SL
tF 0.186 0.107 + 0.040*SL 0.101 + 0.041*SL 0.096 + 0.042*SL
tPLH 0.142 0.102 + 0.020*SL 0.112 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.129 0.081 + 0.024*SL 0.092 + 0.021*SL 0.094 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.121 0.084 + 0.018*SL 0.083 + 0.019*SL 0.075 + 0.019*SL
tF 0.163 0.118 + 0.023*SL 0.125 + 0.021*SL 0.129 + 0.021*SL
tPLH 0.220 0.198 + 0.011*SL 0.204 + 0.009*SL 0.210 + 0.009*SL
tPHL 0.321 0.290 + 0.015*SL 0.301 + 0.013*SL 0.320 + 0.011*SL
B to Y tR 0.123 0.086 + 0.019*SL 0.086 + 0.019*SL 0.078 + 0.019*SL
tF 0.163 0.118 + 0.023*SL 0.125 + 0.021*SL 0.129 + 0.021*SL
tPLH 0.239 0.217 + 0.011*SL 0.224 + 0.009*SL 0.230 + 0.009*SL
tPHL 0.332 0.301 + 0.016*SL 0.312 + 0.013*SL 0.332 + 0.011*SL
C to Y tR 0.161 0.130 + 0.016*SL 0.124 + 0.017*SL 0.110 + 0.018*SL
tF 0.140 0.100 + 0.020*SL 0.099 + 0.020*SL 0.093 + 0.021*SL
tPLH 0.115 0.091 + 0.012*SL 0.102 + 0.009*SL 0.108 + 0.009*SL
tPHL 0.100 0.072 + 0.014*SL 0.082 + 0.011*SL 0.092 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-252 Samsung ASIC
SCG14/SCG14D2
2-NAND into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG14 SCG14D2 SCG14 SCG14D2
ABCABC 1.67 2.33
0.8 0.9 1.2 0.8 0.9 2.4
A
BY
C
Truth Table
ABC Y
0x1 0
x01 0
Other States 1
Samsung ASIC 3-253 STDM110
SCG14/SCG14D2
2-NAND into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG14
SCG14D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.166 0.091 + 0.037*SL 0.088 + 0.038*SL 0.082 + 0.039*SL
tF 0.175 0.093 + 0.041*SL 0.090 + 0.041*SL 0.085 + 0.042*SL
tPLH 0.229 0.189 + 0.020*SL 0.197 + 0.018*SL 0.201 + 0.018*SL
tPHL 0.240 0.195 + 0.023*SL 0.201 + 0.021*SL 0.204 + 0.021*SL
B to Y tR 0.167 0.093 + 0.037*SL 0.088 + 0.038*SL 0.084 + 0.039*SL
tF 0.176 0.095 + 0.041*SL 0.092 + 0.041*SL 0.087 + 0.042*SL
tPLH 0.225 0.184 + 0.020*SL 0.193 + 0.018*SL 0.197 + 0.018*SL
tPHL 0.259 0.213 + 0.023*SL 0.220 + 0.021*SL 0.223 + 0.021*SL
C to Y tR 0.200 0.132 + 0.034*SL 0.124 + 0.036*SL 0.112 + 0.038*SL
tF 0.184 0.106 + 0.039*SL 0.099 + 0.041*SL 0.092 + 0.042*SL
tPLH 0.143 0.103 + 0.020*SL 0.113 + 0.017*SL 0.113 + 0.017*SL
tPHL 0.127 0.080 + 0.024*SL 0.091 + 0.021*SL 0.092 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.134 0.096 + 0.019*SL 0.099 + 0.019*SL 0.093 + 0.019*SL
tF 0.136 0.093 + 0.021*SL 0.096 + 0.020*SL 0.092 + 0.021*SL
tPLH 0.245 0.221 + 0.012*SL 0.230 + 0.010*SL 0.241 + 0.009*SL
tPHL 0.249 0.223 + 0.013*SL 0.230 + 0.011*SL 0.240 + 0.011*SL
B to Y tR 0.135 0.096 + 0.019*SL 0.099 + 0.019*SL 0.093 + 0.019*SL
tF 0.139 0.097 + 0.021*SL 0.099 + 0.020*SL 0.094 + 0.021*SL
tPLH 0.240 0.216 + 0.012*SL 0.225 + 0.010*SL 0.237 + 0.009*SL
tPHL 0.266 0.239 + 0.013*SL 0.247 + 0.011*SL 0.257 + 0.011*SL
C to Y tR 0.161 0.130 + 0.016*SL 0.123 + 0.017*SL 0.110 + 0.018*SL
tF 0.139 0.100 + 0.019*SL 0.098 + 0.020*SL 0.089 + 0.021*SL
tPLH 0.116 0.093 + 0.012*SL 0.104 + 0.009*SL 0.109 + 0.009*SL
tPHL 0.099 0.072 + 0.014*SL 0.082 + 0.011*SL 0.091 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-254 Samsung ASIC
SCG15/SCG15D2
2-NAND into 3-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG15 SCG15D2 SCG15 SCG15D2
ABCDABCD
0.8 0.9 1.0 1.0 0.8 0.8 2.1 2.3 2.00 3.00
A
BY
C
D
Truth Table
ABCDY
0x110
x0110
Other States 1
Samsung ASIC 3-255 STDM110
SCG15/SCG15D2
2-NAND into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG15
SCG15D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.217 0.123 + 0.047*SL 0.119 + 0.048*SL 0.113 + 0.049*SL
tF 0.262 0.145 + 0.058*SL 0.144 + 0.058*SL 0.139 + 0.059*SL
tPLH 0.258 0.211 + 0.024*SL 0.217 + 0.022*SL 0.219 + 0.022*SL
tPHL 0.277 0.218 + 0.029*SL 0.221 + 0.029*SL 0.223 + 0.028*SL
B to Y tR 0.217 0.122 + 0.047*SL 0.119 + 0.048*SL 0.114 + 0.049*SL
tF 0.263 0.148 + 0.058*SL 0.145 + 0.058*SL 0.141 + 0.059*SL
tPLH 0.254 0.207 + 0.024*SL 0.213 + 0.022*SL 0.215 + 0.022*SL
tPHL 0.295 0.236 + 0.029*SL 0.239 + 0.029*SL 0.241 + 0.028*SL
C to Y tR 0.251 0.162 + 0.044*SL 0.153 + 0.047*SL 0.141 + 0.048*SL
tF 0.271 0.159 + 0.056*SL 0.152 + 0.058*SL 0.146 + 0.059*SL
tPLH 0.176 0.131 + 0.023*SL 0.133 + 0.022*SL 0.133 + 0.022*SL
tPHL 0.176 0.117 + 0.030*SL 0.121 + 0.028*SL 0.123 + 0.028*SL
D to Y tR 0.273 0.184 + 0.044*SL 0.175 + 0.047*SL 0.164 + 0.048*SL
tF 0.265 0.151 + 0.057*SL 0.146 + 0.058*SL 0.142 + 0.059*SL
tPLH 0.189 0.144 + 0.022*SL 0.146 + 0.022*SL 0.147 + 0.022*SL
tPHL 0.177 0.119 + 0.029*SL 0.122 + 0.029*SL 0.123 + 0.028*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.166 0.120 + 0.023*SL 0.118 + 0.024*SL 0.111 + 0.024*SL
tF 0.192 0.134 + 0.029*SL 0.134 + 0.029*SL 0.130 + 0.029*SL
tPLH 0.265 0.237 + 0.014*SL 0.245 + 0.012*SL 0.253 + 0.011*SL
tPHL 0.267 0.236 + 0.016*SL 0.241 + 0.015*SL 0.246 + 0.014*SL
B to Y tR 0.165 0.118 + 0.023*SL 0.118 + 0.024*SL 0.111 + 0.024*SL
tF 0.194 0.137 + 0.029*SL 0.137 + 0.029*SL 0.131 + 0.029*SL
tPLH 0.260 0.232 + 0.014*SL 0.241 + 0.012*SL 0.249 + 0.011*SL
tPHL 0.284 0.252 + 0.016*SL 0.258 + 0.015*SL 0.263 + 0.014*SL
C to Y tR 0.193 0.151 + 0.021*SL 0.144 + 0.023*SL 0.130 + 0.024*SL
tF 0.198 0.143 + 0.027*SL 0.139 + 0.029*SL 0.132 + 0.029*SL
tPLH 0.143 0.118 + 0.013*SL 0.125 + 0.011*SL 0.126 + 0.011*SL
tPHL 0.134 0.101 + 0.017*SL 0.110 + 0.015*SL 0.113 + 0.014*SL
D to Y tR 0.215 0.173 + 0.021*SL 0.167 + 0.023*SL 0.151 + 0.024*SL
tF 0.190 0.134 + 0.028*SL 0.130 + 0.029*SL 0.127 + 0.029*SL
tPLH 0.159 0.135 + 0.012*SL 0.138 + 0.011*SL 0.140 + 0.011*SL
tPHL 0.139 0.106 + 0.016*SL 0.113 + 0.015*SL 0.117 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-256 Samsung ASIC
SCG16/SCG16D2
2-OR with one inverted input into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG16 SCG16D2 SCG16 SCG16D2
ABCABC 2.00 3.00
0.8 1.0 1.0 0.8 2.0 2.1
A
BY
C
Truth Table
ABC Y
0x1 0
x11 0
Other States 1
Samsung ASIC 3-257 STDM110
SCG16/SCG16D2
2-OR with one inverted input into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG16
SCG16D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.334 0.181 + 0.076*SL 0.177 + 0.077*SL 0.175 + 0.078*SL
tF 0.267 0.142 + 0.063*SL 0.139 + 0.063*SL 0.135 + 0.064*SL
tPLH 0.271 0.200 + 0.035*SL 0.202 + 0.035*SL 0.204 + 0.035*SL
tPHL 0.280 0.217 + 0.032*SL 0.219 + 0.031*SL 0.221 + 0.031*SL
B to Y tR 0.345 0.195 + 0.075*SL 0.189 + 0.076*SL 0.182 + 0.077*SL
tF 0.319 0.201 + 0.059*SL 0.191 + 0.061*SL 0.180 + 0.063*SL
tPLH 0.213 0.141 + 0.036*SL 0.144 + 0.035*SL 0.145 + 0.035*SL
tPHL 0.219 0.157 + 0.031*SL 0.158 + 0.031*SL 0.159 + 0.031*SL
C to Y tR 0.226 0.157 + 0.034*SL 0.149 + 0.036*SL 0.138 + 0.038*SL
tF 0.309 0.187 + 0.061*SL 0.182 + 0.062*SL 0.175 + 0.063*SL
tPLH 0.158 0.121 + 0.019*SL 0.126 + 0.017*SL 0.126 + 0.017*SL
tPHL 0.230 0.166 + 0.032*SL 0.169 + 0.031*SL 0.171 + 0.031*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.247 0.172 + 0.038*SL 0.169 + 0.038*SL 0.163 + 0.039*SL
tF 0.202 0.139 + 0.031*SL 0.137 + 0.032*SL 0.131 + 0.032*SL
tPLH 0.256 0.220 + 0.018*SL 0.222 + 0.018*SL 0.224 + 0.017*SL
tPHL 0.275 0.241 + 0.017*SL 0.245 + 0.016*SL 0.249 + 0.016*SL
B to Y tR 0.257 0.183 + 0.037*SL 0.179 + 0.038*SL 0.170 + 0.039*SL
tF 0.249 0.193 + 0.028*SL 0.186 + 0.030*SL 0.172 + 0.031*SL
tPLH 0.172 0.134 + 0.019*SL 0.139 + 0.018*SL 0.141 + 0.017*SL
tPHL 0.181 0.150 + 0.016*SL 0.151 + 0.016*SL 0.153 + 0.015*SL
C to Y tR 0.182 0.149 + 0.017*SL 0.146 + 0.017*SL 0.132 + 0.019*SL
tF 0.237 0.177 + 0.030*SL 0.174 + 0.031*SL 0.166 + 0.031*SL
tPLH 0.134 0.112 + 0.011*SL 0.120 + 0.009*SL 0.122 + 0.009*SL
tPHL 0.188 0.156 + 0.016*SL 0.158 + 0.016*SL 0.161 + 0.016*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-258 Samsung ASIC
SCG17/SCG17D2
2-AND into 2-NOR into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG17 SCG17D2 SCG17 SCG17D2
ABCDABCD
0.8 0.8 0.8 1.1 0.8 0.8 0.8 2.4 2.00 2.67
A
B
C
DY
Truth Table
ABCDY
0x010
x0010
Other States 1
Samsung ASIC 3-259 STDM110
SCG17/SCG17D2
2-AND into 2-NOR into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG17
SCG17D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.178 0.103 + 0.037*SL 0.103 + 0.037*SL 0.098 + 0.038*SL
tF 0.194 0.112 + 0.041*SL 0.115 + 0.040*SL 0.114 + 0.040*SL
tPLH 0.287 0.243 + 0.022*SL 0.255 + 0.019*SL 0.263 + 0.018*SL
tPHL 0.290 0.239 + 0.026*SL 0.252 + 0.022*SL 0.263 + 0.021*SL
B to Y tR 0.179 0.105 + 0.037*SL 0.103 + 0.038*SL 0.098 + 0.038*SL
tF 0.198 0.115 + 0.041*SL 0.119 + 0.040*SL 0.117 + 0.040*SL
tPLH 0.281 0.237 + 0.022*SL 0.249 + 0.019*SL 0.257 + 0.018*SL
tPHL 0.308 0.257 + 0.026*SL 0.271 + 0.022*SL 0.282 + 0.021*SL
C to Y tR 0.164 0.090 + 0.037*SL 0.086 + 0.038*SL 0.079 + 0.039*SL
tF 0.198 0.116 + 0.041*SL 0.119 + 0.040*SL 0.118 + 0.040*SL
tPLH 0.277 0.238 + 0.020*SL 0.245 + 0.018*SL 0.248 + 0.018*SL
tPHL 0.349 0.298 + 0.026*SL 0.311 + 0.022*SL 0.323 + 0.021*SL
D to Y tR 0.200 0.132 + 0.034*SL 0.124 + 0.036*SL 0.112 + 0.038*SL
tF 0.182 0.105 + 0.039*SL 0.098 + 0.040*SL 0.093 + 0.041*SL
tPLH 0.142 0.103 + 0.020*SL 0.112 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.126 0.079 + 0.024*SL 0.091 + 0.021*SL 0.093 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.154 0.114 + 0.020*SL 0.120 + 0.019*SL 0.119 + 0.019*SL
tF 0.161 0.117 + 0.022*SL 0.125 + 0.020*SL 0.130 + 0.020*SL
tPLH 0.317 0.290 + 0.014*SL 0.301 + 0.011*SL 0.319 + 0.009*SL
tPHL 0.313 0.283 + 0.015*SL 0.294 + 0.013*SL 0.314 + 0.011*SL
B to Y tR 0.155 0.115 + 0.020*SL 0.121 + 0.019*SL 0.119 + 0.019*SL
tF 0.165 0.121 + 0.022*SL 0.128 + 0.020*SL 0.135 + 0.020*SL
tPLH 0.312 0.284 + 0.014*SL 0.295 + 0.011*SL 0.313 + 0.009*SL
tPHL 0.331 0.300 + 0.015*SL 0.311 + 0.013*SL 0.332 + 0.011*SL
C to Y tR 0.133 0.098 + 0.018*SL 0.095 + 0.018*SL 0.089 + 0.019*SL
tF 0.165 0.121 + 0.022*SL 0.129 + 0.020*SL 0.134 + 0.020*SL
tPLH 0.290 0.266 + 0.012*SL 0.274 + 0.010*SL 0.283 + 0.009*SL
tPHL 0.373 0.342 + 0.015*SL 0.353 + 0.013*SL 0.374 + 0.011*SL
D to Y tR 0.162 0.131 + 0.016*SL 0.125 + 0.017*SL 0.111 + 0.019*SL
tF 0.138 0.100 + 0.019*SL 0.097 + 0.020*SL 0.092 + 0.020*SL
tPLH 0.117 0.094 + 0.012*SL 0.104 + 0.009*SL 0.109 + 0.009*SL
tPHL 0.097 0.070 + 0.013*SL 0.080 + 0.011*SL 0.090 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-260 Samsung ASIC
SCG18/SCG18D2
2-AND into 2-NOR into 3-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG18 SCG18D2 SCG18 SCG18D2
ABCDEABCDE 2.33 3.33
0.8 0.8 0.8 1.0 1.0 0.8 0.8 0.8 2.1 2.2
A
B
C
D
EY
Truth Table
ABCDEY
0x0110
x00110
Other States 1
Samsung ASIC 3-261 STDM110
SCG18/SCG18D2
2-AND into 2-NOR into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG18
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.227 0.134 + 0.046*SL 0.130 + 0.048*SL 0.124 + 0.048*SL
tF 0.283 0.165 + 0.059*SL 0.167 + 0.058*SL 0.163 + 0.059*SL
tPLH 0.314 0.264 + 0.025*SL 0.273 + 0.023*SL 0.279 + 0.022*SL
tPHL 0.327 0.263 + 0.032*SL 0.273 + 0.030*SL 0.279 + 0.029*SL
B to Y tR 0.227 0.134 + 0.047*SL 0.131 + 0.047*SL 0.124 + 0.048*SL
tF 0.286 0.168 + 0.059*SL 0.170 + 0.058*SL 0.166 + 0.059*SL
tPLH 0.308 0.258 + 0.025*SL 0.267 + 0.023*SL 0.273 + 0.022*SL
tPHL 0.346 0.281 + 0.032*SL 0.291 + 0.030*SL 0.298 + 0.029*SL
C to Y tR 0.212 0.117 + 0.047*SL 0.114 + 0.048*SL 0.108 + 0.049*SL
tF 0.286 0.168 + 0.059*SL 0.170 + 0.058*SL 0.166 + 0.059*SL
tPLH 0.303 0.256 + 0.023*SL 0.261 + 0.022*SL 0.263 + 0.022*SL
tPHL 0.386 0.322 + 0.032*SL 0.332 + 0.030*SL 0.339 + 0.029*SL
D to Y tR 0.248 0.160 + 0.044*SL 0.150 + 0.046*SL 0.139 + 0.048*SL
tF 0.273 0.159 + 0.057*SL 0.153 + 0.059*SL 0.148 + 0.059*SL
tPLH 0.174 0.130 + 0.022*SL 0.132 + 0.022*SL 0.132 + 0.022*SL
tPHL 0.177 0.116 + 0.030*SL 0.121 + 0.029*SL 0.123 + 0.029*SL
E to Y tR 0.273 0.184 + 0.044*SL 0.176 + 0.046*SL 0.164 + 0.048*SL
tF 0.266 0.150 + 0.058*SL 0.146 + 0.059*SL 0.143 + 0.060*SL
tPLH 0.189 0.144 + 0.022*SL 0.145 + 0.022*SL 0.147 + 0.022*SL
tPHL 0.181 0.121 + 0.030*SL 0.126 + 0.029*SL 0.128 + 0.029*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-262 Samsung ASIC
SCG18/SCG18D2
2-AND into 2-NOR into 3-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG18D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.182 0.134 + 0.024*SL 0.136 + 0.023*SL 0.131 + 0.024*SL
tF 0.215 0.154 + 0.031*SL 0.159 + 0.029*SL 0.159 + 0.029*SL
tPLH 0.330 0.300 + 0.015*SL 0.310 + 0.013*SL 0.325 + 0.011*SL
tPHL 0.327 0.291 + 0.018*SL 0.300 + 0.016*SL 0.315 + 0.015*SL
B to Y tR 0.181 0.133 + 0.024*SL 0.137 + 0.023*SL 0.131 + 0.024*SL
tF 0.218 0.157 + 0.030*SL 0.162 + 0.029*SL 0.163 + 0.029*SL
tPLH 0.324 0.294 + 0.015*SL 0.304 + 0.013*SL 0.320 + 0.011*SL
tPHL 0.345 0.308 + 0.019*SL 0.318 + 0.016*SL 0.334 + 0.015*SL
C to Y tR 0.160 0.114 + 0.023*SL 0.112 + 0.023*SL 0.103 + 0.024*SL
tF 0.219 0.158 + 0.030*SL 0.163 + 0.029*SL 0.163 + 0.029*SL
tPLH 0.304 0.278 + 0.013*SL 0.284 + 0.012*SL 0.291 + 0.011*SL
tPHL 0.387 0.350 + 0.019*SL 0.360 + 0.016*SL 0.375 + 0.015*SL
D to Y tR 0.191 0.149 + 0.021*SL 0.142 + 0.022*SL 0.128 + 0.024*SL
tF 0.197 0.141 + 0.028*SL 0.136 + 0.029*SL 0.132 + 0.030*SL
tPLH 0.141 0.116 + 0.013*SL 0.123 + 0.011*SL 0.124 + 0.011*SL
tPHL 0.134 0.100 + 0.017*SL 0.109 + 0.015*SL 0.114 + 0.014*SL
E to Y tR 0.213 0.172 + 0.021*SL 0.165 + 0.022*SL 0.150 + 0.024*SL
tF 0.190 0.131 + 0.029*SL 0.129 + 0.030*SL 0.128 + 0.030*SL
tPLH 0.157 0.133 + 0.012*SL 0.136 + 0.011*SL 0.138 + 0.011*SL
tPHL 0.140 0.106 + 0.017*SL 0.113 + 0.015*SL 0.118 + 0.014*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-263 STDM110
SCG19/SCG19D2
2-AND into 2-AND into 2-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG19 SCG19D2 SCG19 SCG19D2
ABCDABCD
0.8 0.8 0.9 0.9 0.9 0.8 1.8 2.1 2.67 3.33
A
B
C
DY
Truth Table
ABCDY
111x0
xxx10
Other States 1
STDM110 3-264 Samsung ASIC
SCG19/SCG19D2
2-AND into 2-AND into 2-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG19
SCG19D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.294 0.139 + 0.078*SL 0.135 + 0.079*SL 0.135 + 0.079*SL
tF 0.237 0.106 + 0.065*SL 0.102 + 0.066*SL 0.099 + 0.067*SL
tPLH 0.341 0.269 + 0.036*SL 0.271 + 0.035*SL 0.272 + 0.035*SL
tPHL 0.349 0.281 + 0.034*SL 0.285 + 0.033*SL 0.287 + 0.033*SL
B to Y tR 0.294 0.139 + 0.078*SL 0.135 + 0.078*SL 0.135 + 0.079*SL
tF 0.237 0.106 + 0.065*SL 0.102 + 0.066*SL 0.098 + 0.067*SL
tPLH 0.361 0.290 + 0.036*SL 0.291 + 0.035*SL 0.293 + 0.035*SL
tPHL 0.343 0.276 + 0.034*SL 0.280 + 0.033*SL 0.282 + 0.033*SL
C to Y tR 0.339 0.193 + 0.073*SL 0.180 + 0.076*SL 0.164 + 0.078*SL
tF 0.247 0.120 + 0.063*SL 0.112 + 0.065*SL 0.104 + 0.066*SL
tPLH 0.193 0.123 + 0.035*SL 0.123 + 0.035*SL 0.123 + 0.035*SL
tPHL 0.173 0.105 + 0.034*SL 0.111 + 0.033*SL 0.112 + 0.033*SL
D to Y tR 0.328 0.177 + 0.076*SL 0.170 + 0.078*SL 0.162 + 0.079*SL
tF 0.221 0.148 + 0.036*SL 0.140 + 0.038*SL 0.131 + 0.039*SL
tPLH 0.231 0.158 + 0.036*SL 0.160 + 0.036*SL 0.162 + 0.035*SL
tPHL 0.184 0.141 + 0.022*SL 0.143 + 0.021*SL 0.145 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.234 0.158 + 0.038*SL 0.155 + 0.038*SL 0.148 + 0.039*SL
tF 0.189 0.125 + 0.032*SL 0.123 + 0.033*SL 0.116 + 0.033*SL
tPLH 0.365 0.327 + 0.019*SL 0.331 + 0.018*SL 0.334 + 0.018*SL
tPHL 0.361 0.324 + 0.018*SL 0.331 + 0.017*SL 0.337 + 0.016*SL
B to Y tR 0.234 0.159 + 0.038*SL 0.155 + 0.038*SL 0.148 + 0.039*SL
tF 0.189 0.125 + 0.032*SL 0.123 + 0.033*SL 0.116 + 0.033*SL
tPLH 0.385 0.347 + 0.019*SL 0.351 + 0.018*SL 0.354 + 0.018*SL
tPHL 0.356 0.319 + 0.018*SL 0.325 + 0.017*SL 0.331 + 0.016*SL
C to Y tR 0.270 0.199 + 0.036*SL 0.192 + 0.037*SL 0.174 + 0.039*SL
tF 0.191 0.129 + 0.031*SL 0.124 + 0.032*SL 0.115 + 0.033*SL
tPLH 0.161 0.124 + 0.018*SL 0.126 + 0.018*SL 0.126 + 0.018*SL
tPHL 0.142 0.105 + 0.019*SL 0.113 + 0.017*SL 0.116 + 0.016*SL
D to Y tR 0.258 0.184 + 0.037*SL 0.178 + 0.038*SL 0.168 + 0.039*SL
tF 0.184 0.149 + 0.017*SL 0.144 + 0.019*SL 0.133 + 0.020*SL
tPLH 0.191 0.153 + 0.019*SL 0.156 + 0.018*SL 0.158 + 0.018*SL
tPHL 0.160 0.137 + 0.011*SL 0.140 + 0.011*SL 0.142 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-265 STDM110
SCG20/SCG20D2
2-NOR into 2-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG20 SCG20D2 SCG20 SCG20D2
ABCABC 1.67 2.33
0.8 0.8 1.0 0.8 0.8 2.1
Y
C
A
B
Truth Table
ABC Y
1x0 1
x10 1
Other States 0
STDM110 3-266 Samsung ASIC
SCG20/SCG20D2
2-NOR into 2-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG20
SCG20D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.274 0.124 + 0.075*SL 0.118 + 0.076*SL 0.115 + 0.077*SL
tF 0.156 0.089 + 0.034*SL 0.093 + 0.033*SL 0.089 + 0.033*SL
tPLH 0.246 0.176 + 0.035*SL 0.178 + 0.035*SL 0.179 + 0.034*SL
tPHL 0.276 0.229 + 0.024*SL 0.244 + 0.020*SL 0.256 + 0.018*SL
B to Y tR 0.275 0.125 + 0.075*SL 0.120 + 0.076*SL 0.116 + 0.077*SL
tF 0.155 0.086 + 0.034*SL 0.093 + 0.033*SL 0.091 + 0.033*SL
tPLH 0.268 0.198 + 0.035*SL 0.200 + 0.035*SL 0.201 + 0.035*SL
tPHL 0.285 0.238 + 0.024*SL 0.254 + 0.020*SL 0.265 + 0.018*SL
C to Y tR 0.286 0.140 + 0.073*SL 0.131 + 0.075*SL 0.124 + 0.076*SL
tF 0.178 0.121 + 0.028*SL 0.110 + 0.031*SL 0.099 + 0.033*SL
tPLH 0.184 0.113 + 0.036*SL 0.117 + 0.035*SL 0.118 + 0.034*SL
tPHL 0.139 0.099 + 0.020*SL 0.109 + 0.018*SL 0.110 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.190 0.117 + 0.037*SL 0.113 + 0.038*SL 0.106 + 0.038*SL
tF 0.133 0.094 + 0.019*SL 0.104 + 0.017*SL 0.111 + 0.016*SL
tPLH 0.235 0.198 + 0.018*SL 0.202 + 0.017*SL 0.204 + 0.017*SL
tPHL 0.300 0.269 + 0.015*SL 0.283 + 0.012*SL 0.306 + 0.010*SL
B to Y tR 0.193 0.119 + 0.037*SL 0.115 + 0.038*SL 0.108 + 0.038*SL
tF 0.134 0.097 + 0.019*SL 0.105 + 0.017*SL 0.110 + 0.016*SL
tPLH 0.255 0.218 + 0.019*SL 0.222 + 0.017*SL 0.224 + 0.017*SL
tPHL 0.310 0.280 + 0.015*SL 0.294 + 0.012*SL 0.317 + 0.010*SL
C to Y tR 0.202 0.131 + 0.035*SL 0.123 + 0.037*SL 0.114 + 0.038*SL
tF 0.145 0.117 + 0.014*SL 0.114 + 0.015*SL 0.098 + 0.016*SL
tPLH 0.141 0.101 + 0.020*SL 0.111 + 0.017*SL 0.113 + 0.017*SL
tPHL 0.112 0.087 + 0.012*SL 0.100 + 0.009*SL 0.105 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-267 STDM110
SCG21/SCG21D2
2-NOR into 3-NOR with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG21 SCG21D2 SCG21 SCG21D2
ABCDABCD
0.8 0.8 0.9 0.9 0.8 0.8 1.9 2.0 2.00 3.00
Y
C
A
B
D
Truth Table
ABCDY
1x001
x1001
Other States 0
STDM110 3-268 Samsung ASIC
SCG21/SCG21D2
2-NOR into 3-NOR with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG21
SCG21D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.452 0.221 + 0.115*SL 0.220 + 0.116*SL 0.222 + 0.115*SL
tF 0.191 0.107 + 0.042*SL 0.110 + 0.041*SL 0.105 + 0.042*SL
tPLH 0.305 0.199 + 0.053*SL 0.201 + 0.053*SL 0.203 + 0.052*SL
tPHL 0.307 0.253 + 0.027*SL 0.267 + 0.024*SL 0.276 + 0.023*SL
B to Y tR 0.453 0.222 + 0.115*SL 0.220 + 0.116*SL 0.223 + 0.115*SL
tF 0.192 0.108 + 0.042*SL 0.110 + 0.042*SL 0.106 + 0.042*SL
tPLH 0.327 0.221 + 0.053*SL 0.222 + 0.053*SL 0.225 + 0.052*SL
tPHL 0.317 0.262 + 0.027*SL 0.276 + 0.024*SL 0.286 + 0.023*SL
C to Y tR 0.468 0.244 + 0.112*SL 0.236 + 0.114*SL 0.228 + 0.115*SL
tF 0.212 0.136 + 0.038*SL 0.125 + 0.040*SL 0.114 + 0.042*SL
tPLH 0.272 0.166 + 0.053*SL 0.168 + 0.052*SL 0.170 + 0.052*SL
tPHL 0.170 0.124 + 0.023*SL 0.128 + 0.022*SL 0.129 + 0.022*SL
D to Y tR 0.464 0.239 + 0.113*SL 0.231 + 0.115*SL 0.226 + 0.115*SL
tF 0.243 0.167 + 0.038*SL 0.157 + 0.041*SL 0.146 + 0.042*SL
tPLH 0.292 0.186 + 0.053*SL 0.188 + 0.052*SL 0.190 + 0.052*SL
tPHL 0.182 0.135 + 0.024*SL 0.138 + 0.023*SL 0.142 + 0.023*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.305 0.190 + 0.057*SL 0.187 + 0.058*SL 0.185 + 0.058*SL
tF 0.154 0.108 + 0.023*SL 0.116 + 0.021*SL 0.117 + 0.021*SL
tPLH 0.262 0.209 + 0.026*SL 0.209 + 0.027*SL 0.211 + 0.026*SL
tPHL 0.317 0.283 + 0.017*SL 0.297 + 0.014*SL 0.319 + 0.012*SL
B to Y tR 0.307 0.193 + 0.057*SL 0.188 + 0.058*SL 0.186 + 0.058*SL
tF 0.154 0.108 + 0.023*SL 0.115 + 0.021*SL 0.117 + 0.021*SL
tPLH 0.282 0.229 + 0.026*SL 0.229 + 0.027*SL 0.231 + 0.026*SL
tPHL 0.328 0.293 + 0.017*SL 0.308 + 0.014*SL 0.329 + 0.012*SL
C to Y tR 0.323 0.213 + 0.055*SL 0.206 + 0.057*SL 0.195 + 0.058*SL
tF 0.163 0.127 + 0.018*SL 0.121 + 0.019*SL 0.106 + 0.021*SL
tPLH 0.203 0.148 + 0.028*SL 0.152 + 0.027*SL 0.155 + 0.026*SL
tPHL 0.136 0.109 + 0.013*SL 0.118 + 0.011*SL 0.120 + 0.011*SL
D to Y tR 0.317 0.206 + 0.056*SL 0.200 + 0.057*SL 0.191 + 0.058*SL
tF 0.193 0.158 + 0.018*SL 0.151 + 0.019*SL 0.137 + 0.021*SL
tPLH 0.224 0.170 + 0.027*SL 0.172 + 0.027*SL 0.175 + 0.026*SL
tPHL 0.149 0.123 + 0.013*SL 0.128 + 0.012*SL 0.133 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-269 STDM110
SCG22/SCG22D2
2-NAND into 2-OR into 2-NAND with 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG22 SCG22D2 SCG22 SCG22D2
ABCDABCD
0.8 0.9 1.0 1.0 0.8 0.9 2.0 2.0 2.00 3.00
A
B
C
DY
Truth Table
ABCDY
110x1
xxx01
Other States 0
STDM110 3-270 Samsung ASIC
SCG22/SCG22D2
2-NAND into 2-OR into 2-NAND with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG22
SCG22D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.338 0.186 + 0.076*SL 0.181 + 0.077*SL 0.177 + 0.078*SL
tF 0.271 0.145 + 0.063*SL 0.141 + 0.064*SL 0.136 + 0.065*SL
tPLH 0.296 0.223 + 0.036*SL 0.227 + 0.035*SL 0.229 + 0.035*SL
tPHL 0.302 0.237 + 0.033*SL 0.241 + 0.032*SL 0.242 + 0.032*SL
B to Y tR 0.338 0.185 + 0.076*SL 0.181 + 0.077*SL 0.176 + 0.078*SL
tF 0.271 0.144 + 0.064*SL 0.141 + 0.064*SL 0.137 + 0.065*SL
tPLH 0.293 0.220 + 0.036*SL 0.224 + 0.035*SL 0.226 + 0.035*SL
tPHL 0.315 0.250 + 0.033*SL 0.254 + 0.032*SL 0.256 + 0.032*SL
C to Y tR 0.343 0.192 + 0.075*SL 0.186 + 0.077*SL 0.179 + 0.078*SL
tF 0.320 0.200 + 0.060*SL 0.190 + 0.062*SL 0.178 + 0.064*SL
tPLH 0.212 0.140 + 0.036*SL 0.143 + 0.035*SL 0.144 + 0.035*SL
tPHL 0.220 0.156 + 0.032*SL 0.157 + 0.032*SL 0.159 + 0.031*SL
D to Y tR 0.224 0.155 + 0.034*SL 0.147 + 0.036*SL 0.136 + 0.038*SL
tF 0.311 0.187 + 0.062*SL 0.181 + 0.063*SL 0.174 + 0.064*SL
tPLH 0.158 0.120 + 0.019*SL 0.125 + 0.018*SL 0.126 + 0.017*SL
tPHL 0.231 0.166 + 0.032*SL 0.168 + 0.032*SL 0.171 + 0.032*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.254 0.180 + 0.037*SL 0.177 + 0.038*SL 0.170 + 0.038*SL
tF 0.206 0.142 + 0.032*SL 0.141 + 0.032*SL 0.134 + 0.033*SL
tPLH 0.282 0.245 + 0.019*SL 0.249 + 0.018*SL 0.254 + 0.017*SL
tPHL 0.294 0.259 + 0.018*SL 0.264 + 0.017*SL 0.269 + 0.016*SL
B to Y tR 0.254 0.180 + 0.037*SL 0.177 + 0.038*SL 0.170 + 0.038*SL
tF 0.208 0.144 + 0.032*SL 0.143 + 0.032*SL 0.136 + 0.033*SL
tPLH 0.277 0.239 + 0.019*SL 0.244 + 0.018*SL 0.249 + 0.017*SL
tPHL 0.311 0.275 + 0.018*SL 0.280 + 0.017*SL 0.285 + 0.016*SL
C to Y tR 0.254 0.181 + 0.037*SL 0.177 + 0.038*SL 0.170 + 0.038*SL
tF 0.254 0.195 + 0.030*SL 0.189 + 0.031*SL 0.174 + 0.032*SL
tPLH 0.169 0.132 + 0.019*SL 0.137 + 0.018*SL 0.140 + 0.017*SL
tPHL 0.184 0.151 + 0.016*SL 0.152 + 0.016*SL 0.154 + 0.016*SL
D to Y tR 0.179 0.147 + 0.016*SL 0.142 + 0.017*SL 0.128 + 0.018*SL
tF 0.243 0.181 + 0.031*SL 0.177 + 0.032*SL 0.169 + 0.033*SL
tPLH 0.131 0.110 + 0.011*SL 0.118 + 0.009*SL 0.120 + 0.009*SL
tPHL 0.191 0.157 + 0.017*SL 0.159 + 0.016*SL 0.163 + 0.016*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-271 STDM110
DL1D2/DL1D4
1ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL1D2
DL1D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.103 0.068 + 0.018*SL 0.066 + 0.018*SL 0.057 + 0.019*SL
tF 0.090 0.059 + 0.016*SL 0.060 + 0.015*SL 0.055 + 0.016*SL
tPLH 0.964 0.942 + 0.011*SL 0.951 + 0.009*SL 0.957 + 0.009*SL
tPHL 0.971 0.948 + 0.012*SL 0.957 + 0.009*SL 0.967 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.098 0.081 + 0.009*SL 0.080 + 0.009*SL 0.075 + 0.009*SL
tF 0.087 0.067 + 0.010*SL 0.075 + 0.008*SL 0.075 + 0.008*SL
tPLH 1.001 0.987 + 0.007*SL 0.994 + 0.005*SL 1.010 + 0.004*SL
tPHL 1.004 0.989 + 0.007*SL 0.998 + 0.005*SL 1.016 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL1D2 DL1D4 DL1D2 DL1D4
AA
4.00 4.67
0.7 0.7
STDM110 3-272 Samsung ASIC
DL2D2/DL2D4
2ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL2D2
DL2D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.069 + 0.017*SL 0.066 + 0.018*SL 0.058 + 0.019*SL
tF 0.094 0.063 + 0.015*SL 0.063 + 0.015*SL 0.058 + 0.016*SL
tPLH 1.957 1.934 + 0.011*SL 1.943 + 0.009*SL 1.950 + 0.009*SL
tPHL 1.956 1.932 + 0.012*SL 1.942 + 0.009*SL 1.953 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.082 + 0.009*SL 0.083 + 0.009*SL 0.078 + 0.009*SL
tF 0.093 0.075 + 0.009*SL 0.079 + 0.008*SL 0.081 + 0.008*SL
tPLH 2.003 1.989 + 0.007*SL 1.996 + 0.005*SL 2.012 + 0.004*SL
tPHL 2.000 1.985 + 0.007*SL 1.993 + 0.005*SL 2.013 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL2D2 DL2D4 DL2D2 DL2D4
AA
4.67 5.33
0.7 0.7
Samsung ASIC 3-273 STDM110
DL3D2/DL3D4
3ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL3D2
DL3D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.069 + 0.018*SL 0.068 + 0.018*SL 0.057 + 0.019*SL
tF 0.093 0.060 + 0.016*SL 0.064 + 0.015*SL 0.057 + 0.016*SL
tPLH 2.972 2.950 + 0.011*SL 2.959 + 0.009*SL 2.965 + 0.009*SL
tPHL 2.993 2.969 + 0.012*SL 2.979 + 0.009*SL 2.989 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.083 + 0.009*SL 0.082 + 0.009*SL 0.077 + 0.009*SL
tF 0.092 0.074 + 0.009*SL 0.078 + 0.008*SL 0.079 + 0.008*SL
tPLH 3.020 3.006 + 0.007*SL 3.014 + 0.005*SL 3.030 + 0.004*SL
tPHL 3.038 3.023 + 0.007*SL 3.031 + 0.005*SL 3.051 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL3D2 DL3D4 DL3D2 DL3D4
AA
5.33 6.33
0.7 0.7
STDM110 3-274 Samsung ASIC
DL4D2/DL4D4
4ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL4D2
DL4D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.069 + 0.018*SL 0.068 + 0.018*SL 0.058 + 0.019*SL
tF 0.095 0.064 + 0.015*SL 0.064 + 0.015*SL 0.059 + 0.016*SL
tPLH 3.987 3.964 + 0.011*SL 3.973 + 0.009*SL 3.980 + 0.009*SL
tPHL 4.020 3.996 + 0.012*SL 4.006 + 0.009*SL 4.016 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.102 0.082 + 0.010*SL 0.087 + 0.009*SL 0.079 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.081 + 0.008*SL 0.082 + 0.008*SL
tPLH 4.033 4.019 + 0.007*SL 4.026 + 0.005*SL 4.043 + 0.004*SL
tPHL 4.081 4.066 + 0.008*SL 4.074 + 0.005*SL 4.094 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL4D2 DL4D4 DL4D2 DL4D4
AA
6.00 6.67
0.7 0.7
Samsung ASIC 3-275 STDM110
DL5D2/DL5D4
5ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL5D2
DL5D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.069 + 0.017*SL 0.068 + 0.018*SL 0.058 + 0.019*SL
tF 0.094 0.061 + 0.016*SL 0.067 + 0.015*SL 0.059 + 0.016*SL
tPLH 4.966 4.944 + 0.011*SL 4.953 + 0.009*SL 4.959 + 0.009*SL
tPHL 4.990 4.966 + 0.012*SL 4.977 + 0.009*SL 4.987 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.082 + 0.009*SL 0.083 + 0.009*SL 0.078 + 0.009*SL
tF 0.093 0.075 + 0.009*SL 0.079 + 0.008*SL 0.080 + 0.008*SL
tPLH 5.003 4.989 + 0.007*SL 4.996 + 0.005*SL 5.012 + 0.004*SL
tPHL 5.045 5.030 + 0.007*SL 5.038 + 0.005*SL 5.058 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL5D2 DL5D4 DL5D2 DL5D4
AA
6.67 7.33
0.7 0.7
STDM110 3-276 Samsung ASIC
DL10D2/DL10D4
10ns Delay Cell with 2X/4X Drive
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DL10D2
DL10D4
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.108 0.073 + 0.017*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.101 0.069 + 0.016*SL 0.072 + 0.015*SL 0.066 + 0.016*SL
tPLH 10.083 10.060 + 0.011*SL 10.070 + 0.009*SL 10.076 + 0.009*SL
tPHL 10.147 10.123 + 0.012*SL 10.133 + 0.010*SL 10.144 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.104 0.085 + 0.010*SL 0.088 + 0.009*SL 0.081 + 0.009*SL
tF 0.097 0.080 + 0.009*SL 0.083 + 0.008*SL 0.087 + 0.008*SL
tPLH 10.138 10.123 + 0.007*SL 10.132 + 0.005*SL 10.148 + 0.004*SL
tPHL 10.207 10.192 + 0.008*SL 10.200 + 0.006*SL 10.222 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
Cell Data
AY
00
11
Input Load (SL) Gate Count
DL10D2 DL10D4 DL10D2 DL2D4
AA
8.67 9.33
0.7 0.7
Samsung ASIC 3-277 STDM110
IVDH/IV/IVD2/IVD3/IVD4/IVD6/IVD8/IVD16
Inverter with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Logic Symbol
Cell Data Input Load (SL)
IVDH IV IVD2 IVD3 IVD4 IVD6 IVD8 IVD16
AAAAAAAA
0.5 1.0 2.0 2.9 3.9 5.9 7.9 15.9
Gate Count
IVDH IV IVD2 IVD3 IVD4 IVD6 IVD8 IVD16
0.67 0.67 1.00 1.33 1.67 2.33 2.67 5.00
AY
Truth Table
AY
01
10
STDM110 3-278 Samsung ASIC
IVDH/IV/IVD2/IVD3/IVD4/IVD6/IVD8/IVD16
Inverter with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVDH
IV
IVD2
IVD3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.264 0.112 + 0.076*SL 0.090 + 0.081*SL 0.070 + 0.084*SL
tF 0.213 0.101 + 0.056*SL 0.079 + 0.061*SL 0.058 + 0.064*SL
tPLH 0.172 0.094 + 0.039*SL 0.100 + 0.037*SL 0.100 + 0.038*SL
tPHL 0.154 0.083 + 0.036*SL 0.093 + 0.033*SL 0.093 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.175 0.108 + 0.033*SL 0.098 + 0.036*SL 0.086 + 0.037*SL
tF 0.151 0.096 + 0.027*SL 0.088 + 0.030*SL 0.075 + 0.031*SL
tPLH 0.117 0.073 + 0.022*SL 0.093 + 0.017*SL 0.094 + 0.017*SL
tPHL 0.113 0.068 + 0.022*SL 0.090 + 0.017*SL 0.091 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.126 0.089 + 0.018*SL 0.094 + 0.017*SL 0.078 + 0.018*SL
tF 0.109 0.077 + 0.016*SL 0.086 + 0.014*SL 0.070 + 0.015*SL
tPLH 0.083 0.054 + 0.015*SL 0.073 + 0.010*SL 0.088 + 0.009*SL
tPHL 0.077 0.049 + 0.014*SL 0.067 + 0.010*SL 0.084 + 0.008*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.117 0.091 + 0.013*SL 0.098 + 0.011*SL 0.077 + 0.012*SL
tF 0.102 0.078 + 0.012*SL 0.089 + 0.009*SL 0.068 + 0.011*SL
tPLH 0.076 0.055 + 0.010*SL 0.070 + 0.007*SL 0.089 + 0.006*SL
tPHL 0.072 0.051 + 0.010*SL 0.066 + 0.007*SL 0.086 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-279 STDM110
IVDH/IV/IVD2/IVD3/IVD4/IVD6/IVD8/IVD16
Inverter with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVD4
IVD6
IVD8
IVD16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.114 0.093 + 0.010*SL 0.101 + 0.008*SL 0.085 + 0.009*SL
tF 0.099 0.080 + 0.009*SL 0.089 + 0.007*SL 0.075 + 0.008*SL
tPLH 0.073 0.057 + 0.008*SL 0.067 + 0.006*SL 0.090 + 0.004*SL
tPHL 0.070 0.053 + 0.008*SL 0.064 + 0.006*SL 0.087 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.098 0.084 + 0.007*SL 0.089 + 0.006*SL 0.054 + 0.006*SL
tF 0.086 0.073 + 0.007*SL 0.080 + 0.005*SL 0.047 + 0.005*SL
tPLH 0.062 0.050 + 0.006*SL 0.061 + 0.003*SL 0.087 + 0.003*SL
tPHL 0.057 0.045 + 0.006*SL 0.057 + 0.003*SL 0.084 + 0.003*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.096 0.084 + 0.006*SL 0.090 + 0.004*SL 0.064 + 0.005*SL
tF 0.083 0.072 + 0.005*SL 0.079 + 0.004*SL 0.056 + 0.004*SL
tPLH 0.059 0.049 + 0.005*SL 0.058 + 0.003*SL 0.087 + 0.002*SL
tPHL 0.055 0.045 + 0.005*SL 0.054 + 0.003*SL 0.084 + 0.002*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.089 0.084 + 0.003*SL 0.086 + 0.002*SL 0.082 + 0.002*SL
tF 0.077 0.072 + 0.003*SL 0.075 + 0.002*SL 0.075 + 0.002*SL
tPLH 0.054 0.049 + 0.003*SL 0.053 + 0.002*SL 0.086 + 0.001*SL
tPHL 0.050 0.045 + 0.003*SL 0.048 + 0.002*SL 0.083 + 0.001*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-280 Samsung ASIC
IVCD(11/13)/IVCD(22/26)/IVCD44
1X IV into (1X/3X) IV/2X IV into (2X/6X) IV/4X IV into 4X IV
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVCD11
IVCD13
Input Load (SL) Gate Count
IVCD11 IVCD13 IVCD22 IVCD26 IVCD44 IVCD11 IVCD13 IVCD22 IVCD26 IVCD44
AAAAA
1.0 1.0 2.0 1.9 3.8 1.00 1.67 1.67 2.67 3.00
A Y
YN
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.220 0.154 + 0.033*SL 0.143 + 0.036*SL 0.130 + 0.038*SL
tF 0.192 0.133 + 0.029*SL 0.126 + 0.031*SL 0.115 + 0.033*SL
tPLH 0.142 0.102 + 0.020*SL 0.112 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.139 0.099 + 0.020*SL 0.109 + 0.018*SL 0.109 + 0.018*SL
Y to YN tR 0.149 0.095 + 0.027*SL 0.088 + 0.029*SL 0.074 + 0.031*SL
tF 0.175 0.108 + 0.033*SL 0.098 + 0.036*SL 0.086 + 0.037*SL
tPLH 0.112 0.068 + 0.022*SL 0.089 + 0.017*SL 0.091 + 0.017*SL
tPHL 0.118 0.073 + 0.022*SL 0.093 + 0.017*SL 0.094 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.292 0.223 + 0.035*SL 0.210 + 0.038*SL 0.179 + 0.039*SL
tF 0.252 0.198 + 0.027*SL 0.182 + 0.031*SL 0.150 + 0.033*SL
tPLH 0.180 0.144 + 0.018*SL 0.145 + 0.018*SL 0.147 + 0.017*SL
tPHL 0.169 0.134 + 0.017*SL 0.136 + 0.017*SL 0.137 + 0.017*SL
Y to YN tR 0.102 0.078 + 0.012*SL 0.089 + 0.009*SL 0.068 + 0.011*SL
tF 0.117 0.091 + 0.013*SL 0.098 + 0.011*SL 0.077 + 0.012*SL
tPLH 0.072 0.051 + 0.010*SL 0.066 + 0.007*SL 0.086 + 0.006*SL
tPHL 0.076 0.055 + 0.010*SL 0.070 + 0.007*SL 0.089 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
AYYN
101
010
Samsung ASIC 3-281 STDM110
IVCD(11/13)/IVCD(22/26)/IVCD44
1X IV into (1X/3X) IV/2X IV into (2X/6X) IV/4X IV into 4X IV
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVCD22
IVCD26
IVCD44
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.170 0.139 + 0.016*SL 0.132 + 0.017*SL 0.118 + 0.019*SL
tF 0.149 0.122 + 0.013*SL 0.118 + 0.014*SL 0.104 + 0.015*SL
tPLH 0.111 0.087 + 0.012*SL 0.099 + 0.009*SL 0.105 + 0.009*SL
tPHL 0.104 0.079 + 0.012*SL 0.092 + 0.009*SL 0.100 + 0.008*SL
Y to YN tR 0.110 0.078 + 0.016*SL 0.087 + 0.014*SL 0.070 + 0.015*SL
tF 0.126 0.090 + 0.018*SL 0.095 + 0.017*SL 0.078 + 0.018*SL
tPLH 0.078 0.049 + 0.014*SL 0.068 + 0.010*SL 0.084 + 0.008*SL
tPHL 0.083 0.054 + 0.015*SL 0.073 + 0.010*SL 0.088 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.248 0.217 + 0.016*SL 0.204 + 0.019*SL 0.161 + 0.020*SL
tF 0.216 0.189 + 0.014*SL 0.179 + 0.016*SL 0.136 + 0.017*SL
tPLH 0.154 0.135 + 0.010*SL 0.138 + 0.009*SL 0.141 + 0.009*SL
tPHL 0.144 0.124 + 0.010*SL 0.129 + 0.008*SL 0.131 + 0.008*SL
Y to YN tR 0.087 0.073 + 0.007*SL 0.080 + 0.005*SL 0.047 + 0.005*SL
tF 0.098 0.084 + 0.007*SL 0.089 + 0.006*SL 0.055 + 0.006*SL
tPLH 0.058 0.046 + 0.006*SL 0.057 + 0.003*SL 0.084 + 0.003*SL
tPHL 0.062 0.050 + 0.006*SL 0.061 + 0.003*SL 0.087 + 0.003*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.153 0.137 + 0.008*SL 0.136 + 0.008*SL 0.119 + 0.009*SL
tF 0.134 0.119 + 0.008*SL 0.122 + 0.007*SL 0.106 + 0.008*SL
tPLH 0.097 0.084 + 0.007*SL 0.091 + 0.005*SL 0.104 + 0.004*SL
tPHL 0.091 0.078 + 0.007*SL 0.085 + 0.005*SL 0.100 + 0.004*SL
Y to YN tR 0.092 0.074 + 0.009*SL 0.082 + 0.007*SL 0.072 + 0.008*SL
tF 0.105 0.083 + 0.011*SL 0.094 + 0.008*SL 0.080 + 0.009*SL
tPLH 0.063 0.046 + 0.009*SL 0.058 + 0.006*SL 0.084 + 0.004*SL
tPHL 0.067 0.050 + 0.009*SL 0.062 + 0.006*SL 0.087 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-282 Samsung ASIC
IVT/IVTD2/IVTD4/IVTD8/IVTD16
Inverting Tri-State Buffer with Enable High, 1X/2X/4X/8X/16X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVT
IVTD2
Input Load (SL) Output Load (SL)
IVT IVTD2 IVTD4 IVTD
8
IVTD
16
IVT IVTD2 IVTD4 IVTD
8
IVTD
16
AEAEAEAEA E YYYYY
0.5 1.3 0.5 1.3 0.5 1.3 1.0 3.0 1.0 3.0 0.9 1.1 2.2 4.4 8.5
Gate Count
IVT IVTD2 IVTD4 IVTD
8
IVTD
16
3.00 3.33 3.67 6.00 8.33
AY
E
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.150 0.075 + 0.037*SL 0.071 + 0.038*SL 0.068 + 0.039*SL
tF 0.144 0.076 + 0.034*SL 0.080 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.359 0.318 + 0.020*SL 0.327 + 0.018*SL 0.331 + 0.018*SL
tPHL 0.382 0.336 + 0.023*SL 0.351 + 0.020*SL 0.361 + 0.018*SL
E to Y tR 0.177 0.092 + 0.043*SL 0.087 + 0.044*SL 0.079 + 0.045*SL
tF 0.164 0.089 + 0.037*SL 0.095 + 0.036*SL 0.090 + 0.037*SL
tPLH 0.199 0.158 + 0.021*SL 0.167 + 0.018*SL 0.171 + 0.018*SL
tPHL 0.316 0.268 + 0.024*SL 0.283 + 0.020*SL 0.294 + 0.019*SL
tPLZ 0.256 0.256 + 0.000*SL 0.256 + 0.000*SL 0.256 + 0.000*SL
tPHZ 0.189 0.189 + 0.000*SL 0.189 + 0.000*SL 0.189 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.068 + 0.020*SL 0.071 + 0.019*SL 0.067 + 0.019*SL
tF 0.103 0.065 + 0.019*SL 0.074 + 0.017*SL 0.078 + 0.017*SL
tPLH 0.352 0.326 + 0.013*SL 0.338 + 0.010*SL 0.351 + 0.009*SL
tPHL 0.364 0.334 + 0.015*SL 0.349 + 0.011*SL 0.370 + 0.009*SL
E to Y tR 0.119 0.079 + 0.020*SL 0.080 + 0.020*SL 0.074 + 0.021*SL
tF 0.116 0.077 + 0.020*SL 0.085 + 0.018*SL 0.088 + 0.017*SL
tPLH 0.192 0.165 + 0.013*SL 0.179 + 0.010*SL 0.191 + 0.009*SL
tPHL 0.294 0.263 + 0.015*SL 0.280 + 0.011*SL 0.301 + 0.010*SL
tPLZ 0.272 0.272 + 0.000*SL 0.272 + 0.000*SL 0.272 + 0.000*SL
tPHZ 0.225 0.224 + 0.000*SL 0.225 + 0.000*SL 0.225 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Truth Table
AEY
x 0 Hi-Z
011
110
Samsung ASIC 3-283 STDM110
IVT/IVTD2/IVTD4/IVTD8/IVTD16
Inverting Tri-State Buffer with Enable High, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVTD4
IVTD8
IVTD16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.102 0.079 + 0.011*SL 0.086 + 0.010*SL 0.092 + 0.009*SL
tF 0.095 0.075 + 0.010*SL 0.080 + 0.009*SL 0.097 + 0.008*SL
tPLH 0.377 0.360 + 0.009*SL 0.370 + 0.006*SL 0.395 + 0.005*SL
tPHL 0.382 0.364 + 0.009*SL 0.374 + 0.006*SL 0.403 + 0.005*SL
E to Y tR 0.111 0.087 + 0.012*SL 0.095 + 0.010*SL 0.097 + 0.010*SL
tF 0.106 0.083 + 0.012*SL 0.094 + 0.009*SL 0.109 + 0.008*SL
tPLH 0.215 0.197 + 0.009*SL 0.210 + 0.006*SL 0.236 + 0.005*SL
tPHL 0.312 0.292 + 0.010*SL 0.305 + 0.007*SL 0.338 + 0.005*SL
tPLZ 0.305 0.304 + 0.000*SL 0.305 + 0.000*SL 0.305 + 0.000*SL
tPHZ 0.293 0.293 + 0.000*SL 0.293 + 0.000*SL 0.294 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.080 0.068 + 0.006*SL 0.072 + 0.005*SL 0.066 + 0.005*SL
tF 0.074 0.064 + 0.005*SL 0.067 + 0.004*SL 0.075 + 0.004*SL
tPLH 0.339 0.331 + 0.004*SL 0.337 + 0.003*SL 0.362 + 0.002*SL
tPHL 0.362 0.353 + 0.004*SL 0.359 + 0.003*SL 0.396 + 0.002*SL
E to Y tR 0.086 0.074 + 0.006*SL 0.078 + 0.005*SL 0.068 + 0.005*SL
tF 0.079 0.068 + 0.006*SL 0.074 + 0.004*SL 0.080 + 0.004*SL
tPLH 0.170 0.161 + 0.005*SL 0.169 + 0.003*SL 0.197 + 0.002*SL
tPHL 0.278 0.269 + 0.005*SL 0.277 + 0.003*SL 0.317 + 0.002*SL
tPLZ 0.304 0.304 + 0.000*SL 0.304 + 0.000*SL 0.304 + 0.000*SL
tPHZ 0.230 0.230 + 0.000*SL 0.230 + 0.000*SL 0.231 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.090 0.083 + 0.004*SL 0.087 + 0.003*SL 0.103 + 0.002*SL
tF 0.090 0.086 + 0.002*SL 0.086 + 0.002*SL 0.103 + 0.002*SL
tPLH 0.387 0.382 + 0.002*SL 0.385 + 0.002*SL 0.418 + 0.001*SL
tPHL 0.410 0.405 + 0.002*SL 0.408 + 0.002*SL 0.437 + 0.001*SL
E to Y tR 0.097 0.090 + 0.003*SL 0.093 + 0.003*SL 0.108 + 0.002*SL
tF 0.090 0.082 + 0.004*SL 0.089 + 0.002*SL 0.112 + 0.002*SL
tPLH 0.214 0.207 + 0.003*SL 0.213 + 0.002*SL 0.252 + 0.001*SL
tPHL 0.311 0.305 + 0.003*SL 0.310 + 0.002*SL 0.353 + 0.001*SL
tPLZ 0.355 0.355 + 0.000*SL 0.355 + 0.000*SL 0.355 + 0.000*SL
tPHZ 0.327 0.327 + 0.000*SL 0.328 + 0.000*SL 0.329 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-284 Samsung ASIC
IVTN/IVTND2/IVTND4/IVTND8/IVTND16
Inverting Tri-State Buffer with Enable Low, 1X/2X/4X/8X/16X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVTN
IVTND2
Input Load (SL) Output Load (SL)
IVTN IVTND2 IVTND4 IVTND8 IVTND16 IVTN IVTND2 IVTND4 IVTND8 IVTND16
AENAENAENAENAEN Y Y Y Y Y
0.5 1.1 0.5 1.1 0.5 1.1 1.0 2.1 1.0 2.1 0.9 1.1 2.2 4.4 8.4
Gate Count
IVTN IVTND2 IVTND4 IVTND8 IVTND16
3.00 3.33 3.67 6.00 8.33
AY
EN
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.151 0.076 + 0.037*SL 0.073 + 0.038*SL 0.069 + 0.039*SL
tF 0.143 0.075 + 0.034*SL 0.080 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.361 0.320 + 0.020*SL 0.329 + 0.018*SL 0.333 + 0.018*SL
tPHL 0.378 0.332 + 0.023*SL 0.347 + 0.020*SL 0.357 + 0.018*SL
EN to Y tR 0.176 0.090 + 0.043*SL 0.085 + 0.044*SL 0.079 + 0.045*SL
tF 0.166 0.094 + 0.036*SL 0.094 + 0.036*SL 0.090 + 0.037*SL
tPLH 0.312 0.270 + 0.021*SL 0.280 + 0.019*SL 0.283 + 0.018*SL
tPHL 0.236 0.189 + 0.024*SL 0.204 + 0.020*SL 0.214 + 0.019*SL
tPLZ 0.140 0.140 + 0.000*SL 0.140 + 0.000*SL 0.140 + 0.000*SL
tPHZ 0.266 0.266 + 0.000*SL 0.266 + 0.000*SL 0.266 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.108 0.068 + 0.020*SL 0.073 + 0.019*SL 0.068 + 0.019*SL
tF 0.103 0.065 + 0.019*SL 0.074 + 0.017*SL 0.077 + 0.017*SL
tPLH 0.353 0.327 + 0.013*SL 0.339 + 0.010*SL 0.352 + 0.009*SL
tPHL 0.360 0.330 + 0.015*SL 0.345 + 0.011*SL 0.366 + 0.009*SL
EN to Y tR 0.118 0.077 + 0.021*SL 0.080 + 0.020*SL 0.074 + 0.021*SL
tF 0.116 0.077 + 0.019*SL 0.086 + 0.017*SL 0.088 + 0.017*SL
tPLH 0.303 0.276 + 0.013*SL 0.289 + 0.010*SL 0.302 + 0.009*SL
tPHL 0.215 0.185 + 0.015*SL 0.201 + 0.011*SL 0.222 + 0.010*SL
tPLZ 0.158 0.158 + 0.000*SL 0.158 + 0.000*SL 0.158 + 0.000*SL
tPHZ 0.302 0.302 + 0.000*SL 0.302 + 0.000*SL 0.302 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Truth Table
AENY
x 1 Hi-Z
001
100
Samsung ASIC 3-285 STDM110
IVTN/IVTND2/IVTND4/IVTND8/IVTND16
Inverting Tri-State Buffer with Enable Low, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
IVTND4
IVTND8
IVTND16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.103 0.080 + 0.011*SL 0.087 + 0.010*SL 0.094 + 0.009*SL
tF 0.096 0.075 + 0.010*SL 0.081 + 0.009*SL 0.098 + 0.008*SL
tPLH 0.381 0.364 + 0.009*SL 0.374 + 0.006*SL 0.400 + 0.005*SL
tPHL 0.381 0.364 + 0.009*SL 0.373 + 0.006*SL 0.402 + 0.005*SL
EN to Y tR 0.112 0.089 + 0.012*SL 0.096 + 0.010*SL 0.098 + 0.010*SL
tF 0.107 0.084 + 0.012*SL 0.095 + 0.009*SL 0.109 + 0.008*SL
tPLH 0.326 0.307 + 0.009*SL 0.320 + 0.006*SL 0.346 + 0.005*SL
tPHL 0.229 0.209 + 0.010*SL 0.223 + 0.007*SL 0.255 + 0.005*SL
tPLZ 0.193 0.193 + 0.000*SL 0.193 + 0.000*SL 0.193 + 0.000*SL
tPHZ 0.370 0.370 + 0.000*SL 0.370 + 0.000*SL 0.371 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.080 0.069 + 0.006*SL 0.072 + 0.005*SL 0.068 + 0.005*SL
tF 0.073 0.061 + 0.006*SL 0.069 + 0.004*SL 0.075 + 0.004*SL
tPLH 0.345 0.337 + 0.004*SL 0.342 + 0.003*SL 0.369 + 0.002*SL
tPHL 0.358 0.350 + 0.004*SL 0.356 + 0.003*SL 0.392 + 0.002*SL
EN to Y tR 0.086 0.075 + 0.006*SL 0.079 + 0.005*SL 0.070 + 0.005*SL
tF 0.083 0.073 + 0.005*SL 0.076 + 0.004*SL 0.081 + 0.004*SL
tPLH 0.312 0.303 + 0.005*SL 0.310 + 0.003*SL 0.340 + 0.002*SL
tPHL 0.179 0.170 + 0.005*SL 0.178 + 0.003*SL 0.218 + 0.002*SL
tPLZ 0.164 0.164 + 0.000*SL 0.164 + 0.000*SL 0.164 + 0.000*SL
tPHZ 0.342 0.342 + 0.000*SL 0.342 + 0.000*SL 0.342 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.090 0.083 + 0.003*SL 0.087 + 0.003*SL 0.104 + 0.002*SL
tF 0.090 0.084 + 0.003*SL 0.086 + 0.002*SL 0.102 + 0.002*SL
tPLH 0.390 0.384 + 0.003*SL 0.388 + 0.002*SL 0.421 + 0.001*SL
tPHL 0.406 0.402 + 0.002*SL 0.405 + 0.002*SL 0.433 + 0.001*SL
EN to Y tR 0.099 0.092 + 0.004*SL 0.096 + 0.003*SL 0.109 + 0.002*SL
tF 0.091 0.086 + 0.003*SL 0.087 + 0.002*SL 0.113 + 0.002*SL
tPLH 0.353 0.347 + 0.003*SL 0.352 + 0.002*SL 0.392 + 0.001*SL
tPHL 0.214 0.208 + 0.003*SL 0.213 + 0.002*SL 0.257 + 0.001*SL
tPLZ 0.216 0.216 + 0.000*SL 0.216 + 0.000*SL 0.216 + 0.000*SL
tPHZ 0.439 0.439 + 0.000*SL 0.439 + 0.000*SL 0.440 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-286 Samsung ASIC
NIDH/NID/NID2/NID3/NID4/NID6/NID8/NID16
Non-Inverting Buffer with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Logic Symbol
Cell Data Input Load (SL)
NIDH NID NID2 NID3 NID4 NID6 NID8 NID16
AAAAAAAA
0.6 0.6 0.7 0.8 1.0 1.4 1.9 3.9
Gate Count
NIDH NID NID2 NID3 NID4 NID6 NID8 NID16
1.00 1.00 1.33 1.67 2.00 2.67 3.33 6.33
AY
Truth Table
AY
00
11
Samsung ASIC 3-287 STDM110
NIDH/NID/NID2/NID3/NID4/NID6/NID8/NID16
Non-Inverting Buffer with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NIDH
NID
NID2
NID3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.254 0.082 + 0.086*SL 0.073 + 0.088*SL 0.069 + 0.089*SL
tF 0.198 0.074 + 0.062*SL 0.067 + 0.064*SL 0.060 + 0.065*SL
tPLH 0.250 0.170 + 0.040*SL 0.172 + 0.039*SL 0.173 + 0.039*SL
tPHL 0.260 0.189 + 0.035*SL 0.197 + 0.033*SL 0.199 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.154 0.084 + 0.035*SL 0.075 + 0.037*SL 0.071 + 0.038*SL
tF 0.137 0.076 + 0.031*SL 0.074 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.220 0.182 + 0.019*SL 0.188 + 0.017*SL 0.190 + 0.017*SL
tPHL 0.233 0.194 + 0.020*SL 0.203 + 0.017*SL 0.207 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.110 0.072 + 0.019*SL 0.075 + 0.018*SL 0.068 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.224 0.200 + 0.012*SL 0.210 + 0.010*SL 0.219 + 0.009*SL
tPHL 0.229 0.204 + 0.012*SL 0.215 + 0.010*SL 0.229 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.103 0.077 + 0.013*SL 0.080 + 0.012*SL 0.070 + 0.013*SL
tF 0.094 0.068 + 0.013*SL 0.077 + 0.011*SL 0.071 + 0.011*SL
tPLH 0.220 0.203 + 0.009*SL 0.212 + 0.007*SL 0.224 + 0.006*SL
tPHL 0.229 0.211 + 0.009*SL 0.220 + 0.007*SL 0.237 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-288 Samsung ASIC
NIDH/NID/NID2/NID3/NID4/NID6/NID8/NID16
Non-Inverting Buffer with 0.5X/1X/2X/3X/4X/6X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NID4
NID6
NID8
NID16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.093 0.074 + 0.010*SL 0.076 + 0.009*SL 0.071 + 0.009*SL
tF 0.084 0.065 + 0.010*SL 0.073 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.218 0.204 + 0.007*SL 0.211 + 0.005*SL 0.225 + 0.004*SL
tPHL 0.222 0.208 + 0.007*SL 0.216 + 0.005*SL 0.234 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.086 0.074 + 0.006*SL 0.072 + 0.006*SL 0.055 + 0.006*SL
tF 0.076 0.063 + 0.007*SL 0.068 + 0.005*SL 0.058 + 0.005*SL
tPLH 0.202 0.192 + 0.005*SL 0.199 + 0.003*SL 0.217 + 0.003*SL
tPHL 0.212 0.202 + 0.005*SL 0.209 + 0.003*SL 0.236 + 0.003*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.081 0.074 + 0.004*SL 0.070 + 0.005*SL 0.057 + 0.005*SL
tF 0.071 0.061 + 0.005*SL 0.065 + 0.004*SL 0.060 + 0.004*SL
tPLH 0.196 0.188 + 0.004*SL 0.194 + 0.002*SL 0.212 + 0.002*SL
tPHL 0.203 0.195 + 0.004*SL 0.201 + 0.002*SL 0.227 + 0.002*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.076 0.068 + 0.004*SL 0.075 + 0.002*SL 0.066 + 0.002*SL
tF 0.066 0.060 + 0.003*SL 0.063 + 0.002*SL 0.068 + 0.002*SL
tPLH 0.189 0.186 + 0.002*SL 0.187 + 0.001*SL 0.204 + 0.001*SL
tPHL 0.199 0.195 + 0.002*SL 0.197 + 0.001*SL 0.219 + 0.001*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Samsung ASIC 3-289 STDM110
OAK_NID10P/OAK_NID20P
Clock Buffer for 10pF/20pF Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OAK_NID10P
OAK_NID20P
Input Load (SL) Gate Count
OAK_NID10P OAK_NID20P OAK_NID10P OAK_NID20P
AA
23.24 43.70
1.0 2.0
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.089 0.088 + 0.001*SL 0.076 + 0.001*SL 0.069 + 0.001*SL
tF 0.074 0.073 + 0.001*SL 0.066 + 0.001*SL 0.060 + 0.001*SL
tPLH 0.529 0.528 + 0.000*SL 0.542 + 0.000*SL 0.544 + 0.000*SL
tPHL 0.469 0.468 + 0.000*SL 0.481 + 0.000*SL 0.483 + 0.000*SL
*Group1 : SL < 627, *Group2 : 627 SL
< <
= = 940, *Group3 : 940 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.089 0.088 + 0.000*SL 0.082 + 0.000*SL 0.072 + 0.000*SL
tF 0.068 0.067 + 0.000*SL 0.062 + 0.000*SL 0.055 + 0.000*SL
tPLH 0.503 0.503 + 0.000*SL 0.522 + 0.000*SL 0.528 + 0.000*SL
tPHL 0.435 0.435 + 0.000*SL 0.450 + 0.000*SL 0.454 + 0.000*SL
*Group1 : SL < 784, *Group2 : 784 SL
< <
= = 1567, *Group3 : 1567 < SL
Truth Table
AY
00
11
STDM110 3-290 Samsung ASIC
NIT/NITD2/NITD4/NITD8/NITD16
Non-Inverting Tri-State Buffer with Enable High, 1X/2X/4X/8X/16X Drive
Logic Symbol
Cell Data Input Load (SL) Output Load (SL)
NIT NITD2 NITD4 NITD8 NITD16 NIT NITD2 NITD4 NITD8 NITD16
AEAEAEAEAE YYYYY
1.7 1.2 1.7 1.2 1.7 1.2 4.6 2.5 4.6 2.5 0.9 1.1 2.2 4.4 8.5
Gate Count
NIT NITD2 NITD4 NITD8 NITD16
2.67 3.00 3.33 5.67 8.00
AY
E
Truth Table
AEY
x 0 Hi-Z
010
111
Samsung ASIC 3-291 STDM110
NIT/NITD2/NITD4/NITD8/NITD16
Non-Inverting Tri-State Buffer with Enable High, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NIT
NITD2
NITD4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.149 0.075 + 0.037*SL 0.073 + 0.038*SL 0.066 + 0.039*SL
tF 0.143 0.074 + 0.034*SL 0.081 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.194 0.154 + 0.020*SL 0.163 + 0.018*SL 0.166 + 0.017*SL
tPHL 0.249 0.202 + 0.023*SL 0.217 + 0.020*SL 0.228 + 0.018*SL
E to Y tR 0.177 0.091 + 0.043*SL 0.086 + 0.044*SL 0.079 + 0.045*SL
tF 0.164 0.090 + 0.037*SL 0.094 + 0.036*SL 0.090 + 0.037*SL
tPLH 0.199 0.157 + 0.021*SL 0.167 + 0.018*SL 0.170 + 0.018*SL
tPHL 0.315 0.268 + 0.024*SL 0.282 + 0.020*SL 0.293 + 0.019*SL
tPLZ 0.254 0.254 + 0.000*SL 0.254 + 0.000*SL 0.254 + 0.000*SL
tPHZ 0.189 0.189 + 0.000*SL 0.189 + 0.000*SL 0.189 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.106 0.066 + 0.020*SL 0.070 + 0.019*SL 0.065 + 0.019*SL
tF 0.101 0.063 + 0.019*SL 0.074 + 0.017*SL 0.078 + 0.016*SL
tPLH 0.187 0.162 + 0.013*SL 0.173 + 0.010*SL 0.185 + 0.009*SL
tPHL 0.232 0.202 + 0.015*SL 0.217 + 0.011*SL 0.237 + 0.009*SL
E to Y tR 0.119 0.080 + 0.020*SL 0.079 + 0.020*SL 0.073 + 0.021*SL
tF 0.115 0.076 + 0.019*SL 0.083 + 0.017*SL 0.089 + 0.017*SL
tPLH 0.191 0.164 + 0.013*SL 0.177 + 0.010*SL 0.190 + 0.009*SL
tPHL 0.294 0.263 + 0.015*SL 0.279 + 0.011*SL 0.300 + 0.009*SL
tPLZ 0.268 0.268 + 0.000*SL 0.268 + 0.000*SL 0.268 + 0.000*SL
tPHZ 0.222 0.222 + 0.000*SL 0.222 + 0.000*SL 0.222 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.099 0.075 + 0.012*SL 0.084 + 0.010*SL 0.089 + 0.009*SL
tF 0.095 0.072 + 0.011*SL 0.083 + 0.009*SL 0.099 + 0.008*SL
tPLH 0.213 0.196 + 0.008*SL 0.206 + 0.006*SL 0.229 + 0.005*SL
tPHL 0.253 0.236 + 0.009*SL 0.245 + 0.006*SL 0.274 + 0.005*SL
E to Y tR 0.111 0.087 + 0.012*SL 0.095 + 0.010*SL 0.097 + 0.010*SL
tF 0.107 0.085 + 0.011*SL 0.095 + 0.009*SL 0.111 + 0.008*SL
tPLH 0.214 0.196 + 0.009*SL 0.208 + 0.006*SL 0.234 + 0.005*SL
tPHL 0.308 0.288 + 0.010*SL 0.302 + 0.007*SL 0.334 + 0.005*SL
tPLZ 0.302 0.301 + 0.000*SL 0.302 + 0.000*SL 0.302 + 0.000*SL
tPHZ 0.291 0.291 + 0.000*SL 0.291 + 0.000*SL 0.292 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-292 Samsung ASIC
NIT/NITD2/NITD4/NITD8/NITD16
Non-Inverting Tri-State Buffer with Enable High, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NITD8
NITD16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.078 0.066 + 0.006*SL 0.070 + 0.005*SL 0.064 + 0.005*SL
tF 0.073 0.062 + 0.005*SL 0.067 + 0.004*SL 0.074 + 0.004*SL
tPLH 0.172 0.164 + 0.004*SL 0.170 + 0.003*SL 0.194 + 0.002*SL
tPHL 0.202 0.194 + 0.004*SL 0.200 + 0.003*SL 0.235 + 0.002*SL
E to Y tR 0.086 0.075 + 0.005*SL 0.078 + 0.005*SL 0.067 + 0.005*SL
tF 0.080 0.068 + 0.006*SL 0.074 + 0.004*SL 0.080 + 0.004*SL
tPLH 0.171 0.162 + 0.005*SL 0.170 + 0.003*SL 0.197 + 0.002*SL
tPHL 0.278 0.269 + 0.005*SL 0.277 + 0.003*SL 0.317 + 0.002*SL
tPLZ 0.300 0.300 + 0.000*SL 0.300 + 0.000*SL 0.300 + 0.000*SL
tPHZ 0.231 0.231 + 0.000*SL 0.231 + 0.000*SL 0.231 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.086 0.078 + 0.004*SL 0.083 + 0.003*SL 0.100 + 0.002*SL
tF 0.089 0.083 + 0.003*SL 0.085 + 0.002*SL 0.101 + 0.002*SL
tPLH 0.216 0.210 + 0.003*SL 0.214 + 0.002*SL 0.247 + 0.001*SL
tPHL 0.250 0.246 + 0.002*SL 0.248 + 0.002*SL 0.277 + 0.001*SL
E to Y tR 0.097 0.090 + 0.003*SL 0.093 + 0.003*SL 0.107 + 0.002*SL
tF 0.090 0.082 + 0.004*SL 0.089 + 0.002*SL 0.113 + 0.002*SL
tPLH 0.213 0.207 + 0.003*SL 0.213 + 0.002*SL 0.251 + 0.001*SL
tPHL 0.312 0.306 + 0.003*SL 0.311 + 0.002*SL 0.354 + 0.001*SL
tPLZ 0.356 0.356 + 0.000*SL 0.356 + 0.000*SL 0.356 + 0.000*SL
tPHZ 0.328 0.327 + 0.000*SL 0.328 + 0.000*SL 0.329 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Samsung ASIC 3-293 STDM110
NITN/NITND2/NITND4/NITND8/NITND16
Non-Inverting Tri-State Buffer with Enable Low, 1X/2X/4X/8X/16X Drive
Logic Symbol
Cell Data Input Load (SL) Output Load (SL)
NITN NITND2 NITND4 NITND8 NITND16 NITN NITND2 NITND4 NITND
8
NITND
16
AENAENAENAENAENYYYY Y
1.7 1.3 1.7 1.3 1.7 1.3 4.6 2.7 4.5 2.7 0.9 1.1 2.3 4.4 8.4
Gate Count
NITN NITND2 NITND4 NITND8 NITND16
2.67 3.00 3.33 5.67 8.00
AY
EN
Truth Table
AENY
x 1 Hi-Z
000
101
STDM110 3-294 Samsung ASIC
NITN/NITND2/NITND4/NITND8/NITND16
Non-Inverting Tri-State Buffer with Enable Low, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NITN
NITND2
NITND4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.151 0.076 + 0.037*SL 0.073 + 0.038*SL 0.067 + 0.039*SL
tF 0.143 0.074 + 0.035*SL 0.081 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.196 0.156 + 0.020*SL 0.165 + 0.018*SL 0.168 + 0.018*SL
tPHL 0.247 0.201 + 0.023*SL 0.215 + 0.020*SL 0.225 + 0.018*SL
EN to Y tR 0.176 0.090 + 0.043*SL 0.084 + 0.044*SL 0.079 + 0.045*SL
tF 0.166 0.094 + 0.036*SL 0.094 + 0.036*SL 0.090 + 0.037*SL
tPLH 0.307 0.266 + 0.021*SL 0.275 + 0.018*SL 0.278 + 0.018*SL
tPHL 0.237 0.190 + 0.024*SL 0.205 + 0.020*SL 0.215 + 0.019*SL
tPLZ 0.141 0.141 + 0.000*SL 0.141 + 0.000*SL 0.141 + 0.000*SL
tPHZ 0.266 0.266 + 0.000*SL 0.266 + 0.000*SL 0.266 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.068 + 0.020*SL 0.071 + 0.019*SL 0.067 + 0.019*SL
tF 0.101 0.062 + 0.020*SL 0.073 + 0.017*SL 0.077 + 0.017*SL
tPLH 0.189 0.163 + 0.013*SL 0.175 + 0.010*SL 0.188 + 0.009*SL
tPHL 0.229 0.200 + 0.015*SL 0.214 + 0.011*SL 0.233 + 0.009*SL
EN to Y tR 0.118 0.076 + 0.021*SL 0.080 + 0.020*SL 0.073 + 0.021*SL
tF 0.116 0.077 + 0.019*SL 0.085 + 0.017*SL 0.087 + 0.017*SL
tPLH 0.305 0.278 + 0.013*SL 0.291 + 0.010*SL 0.304 + 0.009*SL
tPHL 0.215 0.184 + 0.015*SL 0.200 + 0.011*SL 0.221 + 0.010*SL
tPLZ 0.158 0.158 + 0.000*SL 0.158 + 0.000*SL 0.158 + 0.000*SL
tPHZ 0.302 0.302 + 0.000*SL 0.302 + 0.000*SL 0.302 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.101 0.078 + 0.011*SL 0.085 + 0.010*SL 0.092 + 0.009*SL
tF 0.095 0.073 + 0.011*SL 0.083 + 0.009*SL 0.098 + 0.008*SL
tPLH 0.217 0.200 + 0.009*SL 0.210 + 0.006*SL 0.235 + 0.005*SL
tPHL 0.251 0.235 + 0.008*SL 0.243 + 0.006*SL 0.271 + 0.005*SL
EN to Y tR 0.112 0.089 + 0.012*SL 0.096 + 0.010*SL 0.099 + 0.010*SL
tF 0.106 0.083 + 0.011*SL 0.095 + 0.009*SL 0.108 + 0.008*SL
tPLH 0.325 0.306 + 0.009*SL 0.319 + 0.006*SL 0.345 + 0.005*SL
tPHL 0.229 0.209 + 0.010*SL 0.223 + 0.007*SL 0.255 + 0.005*SL
tPLZ 0.195 0.194 + 0.000*SL 0.195 + 0.000*SL 0.195 + 0.000*SL
tPHZ 0.377 0.377 + 0.000*SL 0.377 + 0.000*SL 0.378 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-295 STDM110
NITN/NITND2/NITND4/NITND8/NITND16
Non-Inverting Tri-State Buffer with Enable Low, 1X/2X/4X/8X/16X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
NITND8
NITND16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.078 0.066 + 0.006*SL 0.072 + 0.005*SL 0.066 + 0.005*SL
tF 0.072 0.060 + 0.006*SL 0.067 + 0.004*SL 0.073 + 0.004*SL
tPLH 0.175 0.167 + 0.004*SL 0.172 + 0.003*SL 0.198 + 0.002*SL
tPHL 0.200 0.191 + 0.004*SL 0.197 + 0.003*SL 0.232 + 0.002*SL
EN to Y tR 0.086 0.075 + 0.006*SL 0.079 + 0.005*SL 0.070 + 0.005*SL
tF 0.082 0.072 + 0.005*SL 0.076 + 0.004*SL 0.080 + 0.004*SL
tPLH 0.312 0.303 + 0.005*SL 0.311 + 0.003*SL 0.339 + 0.002*SL
tPHL 0.179 0.170 + 0.005*SL 0.178 + 0.003*SL 0.218 + 0.002*SL
tPLZ 0.164 0.164 + 0.000*SL 0.164 + 0.000*SL 0.164 + 0.000*SL
tPHZ 0.342 0.342 + 0.000*SL 0.342 + 0.000*SL 0.343 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.086 0.078 + 0.004*SL 0.085 + 0.003*SL 0.102 + 0.002*SL
tF 0.088 0.083 + 0.002*SL 0.084 + 0.002*SL 0.099 + 0.002*SL
tPLH 0.218 0.212 + 0.003*SL 0.216 + 0.002*SL 0.251 + 0.001*SL
tPHL 0.245 0.241 + 0.002*SL 0.243 + 0.002*SL 0.271 + 0.001*SL
EN to Y tR 0.099 0.093 + 0.003*SL 0.095 + 0.003*SL 0.109 + 0.002*SL
tF 0.088 0.080 + 0.004*SL 0.087 + 0.002*SL 0.110 + 0.002*SL
tPLH 0.355 0.348 + 0.003*SL 0.354 + 0.002*SL 0.394 + 0.001*SL
tPHL 0.210 0.204 + 0.003*SL 0.209 + 0.002*SL 0.252 + 0.001*SL
tPLZ 0.214 0.214 + 0.000*SL 0.214 + 0.000*SL 0.214 + 0.000*SL
tPHZ 0.440 0.440 + 0.000*SL 0.440 + 0.000*SL 0.442 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-296 Samsung ASIC
OAK_DUCLK10/OAK_DUCLK16
2 Phase Clock Generator Buffer (1ns/1.6ns Non-overlapped)
Logic Symbol
Cell Data Input Load (SL) Gate Count
OAK_DUCLK10 OAK_DUCLK16 OAK_DUCLK10 OAK_DUCLK16
AA
13.67 14.67
1.9 1.9
CKB
CK
A
Truth Table
A CK CKB
001
110
Samsung ASIC 3-297 STDM110
OAK_DUCLK10/OAK_DUCLK16
2 Phase Clock Generator Buffer (1ns/1.6ns Non-overlapped)
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
OAK_DUCLK10
OAK_DUCLK16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to CK tR 0.092 0.084 + 0.004*SL 0.085 + 0.004*SL 0.075 + 0.004*SL
tF 0.084 0.075 + 0.004*SL 0.078 + 0.004*SL 0.071 + 0.004*SL
tPLH 2.239 2.232 + 0.003*SL 2.237 + 0.002*SL 2.261 + 0.002*SL
tPHL 1.310 1.304 + 0.003*SL 1.308 + 0.002*SL 1.332 + 0.002*SL
A to CKB tR 0.092 0.084 + 0.004*SL 0.086 + 0.004*SL 0.074 + 0.004*SL
tF 0.083 0.074 + 0.004*SL 0.077 + 0.004*SL 0.070 + 0.004*SL
tPLH 2.330 2.324 + 0.003*SL 2.329 + 0.002*SL 2.353 + 0.002*SL
tPHL 1.214 1.207 + 0.004*SL 1.212 + 0.002*SL 1.236 + 0.002*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to CK tR 0.097 0.089 + 0.004*SL 0.092 + 0.004*SL 0.079 + 0.004*SL
tF 0.093 0.085 + 0.004*SL 0.088 + 0.004*SL 0.078 + 0.004*SL
tPLH 3.215 3.208 + 0.003*SL 3.213 + 0.002*SL 3.238 + 0.002*SL
tPHL 1.770 1.763 + 0.004*SL 1.767 + 0.002*SL 1.794 + 0.002*SL
A to CKB tR 0.096 0.088 + 0.004*SL 0.090 + 0.004*SL 0.077 + 0.004*SL
tF 0.091 0.083 + 0.004*SL 0.086 + 0.004*SL 0.077 + 0.004*SL
tPLH 3.308 3.301 + 0.003*SL 3.306 + 0.002*SL 3.331 + 0.002*SL
tPHL 1.679 1.672 + 0.004*SL 1.677 + 0.002*SL 1.703 + 0.002*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-298 Samsung ASIC
CTSB/CTSBD2/CTSBD3/CTSBD4/CTSBD6/CTSBD8/CTSBD16
Clock Tree Synthesis Buffers
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
CTSB
CTSBD2
CTSBD3
Input Load (SL)
CTSB CTSBD2 CTSBD3 CTSBD4 CTSBD6 CTSBD8 CTSBD16
AAAAAAA
0.8 0.9 0.9 0.9 1.7 1.8 3.5
Gate Count
CTSB CTSBD2 CTSBD3 CTSBD4 CTSBD6 CTSBD8 CTSBD16
1.00 1.33 1.67 2.00 2.67 3.33 6.33
AY
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.154 0.082 + 0.036*SL 0.078 + 0.037*SL 0.071 + 0.038*SL
tF 0.144 0.072 + 0.036*SL 0.067 + 0.037*SL 0.061 + 0.038*SL
tPLH 0.230 0.191 + 0.019*SL 0.199 + 0.017*SL 0.201 + 0.017*SL
tPHL 0.204 0.162 + 0.021*SL 0.168 + 0.020*SL 0.170 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.109 0.072 + 0.019*SL 0.073 + 0.018*SL 0.066 + 0.019*SL
tF 0.099 0.063 + 0.018*SL 0.061 + 0.018*SL 0.055 + 0.019*SL
tPLH 0.222 0.198 + 0.012*SL 0.208 + 0.010*SL 0.217 + 0.009*SL
tPHL 0.197 0.171 + 0.013*SL 0.180 + 0.011*SL 0.188 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.107 0.081 + 0.013*SL 0.083 + 0.012*SL 0.073 + 0.013*SL
tF 0.094 0.067 + 0.014*SL 0.070 + 0.013*SL 0.062 + 0.013*SL
tPLH 0.231 0.213 + 0.009*SL 0.223 + 0.007*SL 0.238 + 0.006*SL
tPHL 0.211 0.191 + 0.010*SL 0.200 + 0.008*SL 0.212 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Truth Table
AY
00
11
Samsung ASIC 3-299 STDM110
CTSB/CTSBD2/CTSBD3/CTSBD4/CTSBD6/CTSBD8/CTSBD16
Clock Tree Synthesis Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
CTSBD4
CTSBD6
CTSBD8
CTSBD16
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.102 0.083 + 0.010*SL 0.085 + 0.009*SL 0.083 + 0.009*SL
tF 0.088 0.067 + 0.011*SL 0.073 + 0.009*SL 0.071 + 0.009*SL
tPLH 0.243 0.228 + 0.008*SL 0.236 + 0.006*SL 0.255 + 0.005*SL
tPHL 0.223 0.207 + 0.008*SL 0.215 + 0.006*SL 0.232 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.083 0.071 + 0.006*SL 0.070 + 0.006*SL 0.054 + 0.006*SL
tF 0.075 0.063 + 0.006*SL 0.062 + 0.006*SL 0.045 + 0.006*SL
tPLH 0.204 0.194 + 0.005*SL 0.201 + 0.003*SL 0.221 + 0.003*SL
tPHL 0.182 0.172 + 0.005*SL 0.178 + 0.003*SL 0.195 + 0.003*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.085 0.074 + 0.005*SL 0.077 + 0.005*SL 0.064 + 0.005*SL
tF 0.073 0.061 + 0.006*SL 0.066 + 0.005*SL 0.057 + 0.005*SL
tPLH 0.214 0.206 + 0.004*SL 0.212 + 0.003*SL 0.236 + 0.002*SL
tPHL 0.202 0.193 + 0.004*SL 0.200 + 0.003*SL 0.223 + 0.002*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.085 0.079 + 0.003*SL 0.081 + 0.002*SL 0.080 + 0.002*SL
tF 0.066 0.059 + 0.004*SL 0.064 + 0.002*SL 0.065 + 0.002*SL
tPLH 0.225 0.220 + 0.002*SL 0.223 + 0.001*SL 0.247 + 0.001*SL
tPHL 0.197 0.192 + 0.002*SL 0.195 + 0.002*SL 0.216 + 0.001*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 66, *Group3 : 66 < SL
STDM110 3-300 Samsung ASIC
FLIP-FLOPS
Cell List
Cell Name Function Description
FD1 D Flip-Flop
FD1D2 D Flip-Flop with 2X Drive
FD1CS D Flip-Flop with Scan Clock
FD1CSD2 D Flip-Flop with Scan Clock, 2X Drive
FD1S D Flip-Flop with Scan
FD1SD2 D Flip-Flop with Scan, 2X Drive
FD1SQ D Flip-Flop with Scan, Q Output Only
FD1SQD2 D Flip-Flop with Scan, Q Output Only, 2X Drive
FD1Q D Flip-Flop with Q Output Only
FD1QD2 D Flip-Flop with Q Output Only, 2X Drive
FD2 D Flip-Flop with Reset
FD2D2 D Flip-Flop with Reset, 2X Drive
FD2CS D Flip-Flop with Reset, Scan Clock
FD2CSD2 D Flip-Flop with Reset, Scan Clock, 2X Drive
FD2S D Flip-Flop with Reset, Scan
FD2SD2 D Flip-Flop with Reset, Scan, 2X Drive
FD2SQ D Flip-Flop with Reset, Scan, Q Output Only
FD2SQD2 D Flip-Flop with Reset, Scan, Q Output Only, 2X Drive
FD2Q D Flip-Flop with Reset, Q Output Only
FD2QD2 D Flip-Flop with Reset, Q Output Only, 2X Drive
FD3 D Flip-Flop with Set
FD3D2 D Flip-Flop with Set, 2X Drive
FD3CS D Flip-Flop with Set, Scan Clock
FD3CSD2 D Flip-Flop with Set, Scan Clock, 2X Drive
FD3S D Flip-Flop with Set, Scan
FD3SD2 D Flip-Flop with Set, Scan, 2X Drive
FD3SQ D Flip-Flop with Set, Scan, Q Output Only
FD3SQD2 D Flip-Flop with Set, Scan, Q Output Only, 2X Drive
FD3Q D Flip-Flop with Set, Q Output Only
FD3QD2 D Flip-Flop with Set, Q Output Only, 2X Drive
FD4 D Flip-Flop with Reset, Set
FD4D2 D Flip-Flop with Reset, Set, 2X Drive
FD4CS D Flip-Flop with Reset, Set, Scan Clock
FD4CSD2 D Flip-Flop with Reset, Set, Scan Clock, 2X Drive
FD4S D Flip-Flop with Reset, Set, Scan
FD4SD2 D Flip-Flop with Reset, Set, Scan, 2X Drive
FD4SQ D Flip-Flop with Reset, Set, Scan, Q Output Only
FD4SQD2 D Flip-Flop with Reset, Set, Scan, Q Output Only, 2X Drive
Samsung ASIC 3-301 STDM110
FLIP-FLOPS
Cell List (Cont.)
FD4Q D Flip-Flop with Reset, Set, Q Output Only
FD4QD2 D Flip-Flop with Reset, Set, Q Output Only, 2X Drive
FD5 D Flip-Flop with Negative Edge Trigger
FD5D2 D Flip-Flop with Negative Edge Trigger, 2X Drive
FD5S D Flip-Flop with Negative Edge Trigger, Scan
FD5SD2 D Flip-Flop with Negative Edge Trigger, Scan, 2X Drive
FD6 D Flip-Flop with Negative Edge Trigger, Reset
FD6D2 D Flip-Flop with Negative Edge Trigger, Reset, 2X Drive
FD6S D Flip-Flop with Negative Edge Trigger, Reset, Scan
FD6SD2 D Flip-Flop with Negative Edge Trigger, Reset, Scan, 2X Drive
FD7 D Flip-Flop with Negative Edge Trigger, Set
FD7D2 D Flip-Flop with Negative Edge Trigger, Set, 2X Drive
FD7S D Flip-Flop with Negative Edge Trigger, Set, Scan
FD7SD2 D Flip-Flop with Negative Edge Trigger, Set, Scan, 2X Drive
FD8 D Flip-Flop with Negative Edge Trigger, Reset, Set
FD8D2 D Flip-Flop with Negative Edge Trigger, Reset, Set, 2X Drive
FD8S D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan
FD8SD2 D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan, 2X Drive
FDS2 D Flip-Flop with Synchronous Clear
FDS2D2 D Flip-Flop with Synchronous Clear, 2X Drive
FDS2CS D Flip-Flop with Synchronous Clear, Scan Clock
FDS2CSD2 D Flip-Flop with Synchronous Clear, Scan Clock, 2X Drive
FDS2S D Flip-Flop with Synchronous Clear, Scan
FDS2SD2 D Flip-Flop with Synchronous Clear, Scan, 2X Drive
FDS3 D Flip-Flop with Synchronous Set
FDS3D2 D Flip-Flop with Synchronous Set, 2X Drive
FDS3CS D Flip-Flop with Synchronous Set, Scan Clock
FDS3CSD2 D Flip-Flop with Synchronous Set, Scan Clock, 2X Drive
FDS3S Flip-Flop with Synchronous Set, Scan
FDS3SD2 Flip-Flop with Synchronous Set, Scan, 2x Drive
FJ1 JK Flip-Flop
FJ1D2 JK Flip-Flop with 2X Drive
FJ1S JK Flip-Flop with Scan
FJ1SD2 JK Flip-Flop with Scan, 2X Drive
FJ2 JK Flip-Flop with Reset
FJ2D2 JK Flip-Flop with Reset, 2X Drive
FJ2S JK Flip-Flop with Reset, Scan
FJ2SD2 JK Flip-Flop with Reset, Scan, 2X Drive
Cell Name Function Description
STDM110 3-302 Samsung ASIC
FLIP-FLOPS
Cell List (Cont.)
FJ4 JK Flip-Flop with Reset, Set
FJ4D2 JK Flip-Flop with Reset, Set, 2X Drive
FJ4S JK Flip-Flop with Reset, Set, Scan
FJ4SD2 JK Flip-Flop with Reset, Set, Scan, 2X Drive
FT2 Toggle Flip-Flop with Reset
FT2D2 Toggle Flip-Flop with Reset, 2X Drive
Cell Name Function Description
Samsung ASIC 3-303 STDM110
NOTE
STDM110 3-304 Samsung ASIC
FD1/FD1D2
D Flip-Flop with 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD1 FD1D2 FD1 FD1D2
DCKDCK
0.6 0.5 0.6 0.6 5.00 5.33
Parameter Symbol Value (ns)
FD1 FD1D2
Input Setup Time (D to CK) tSU 0.265 0.254
Input Hold Time (D to CK) tHD 0.153 0.144
Pulse Width Low (CK) tPWL 0.467 0.463
Pulse Width High (CK) tPWH 0.413 0.435
D
CK
Q
QN
CL
CLB
Q
CLB
CL
QN
D
CK CL
CLB
CLB
CL
CL
CLB
Truth Table
D CK Q (n+1) QN (n+1)
001
110
x Q (n) QN (n)
Samsung ASIC 3-305 STDM110
FD1/FD1D2
D Flip-Flop with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD1
FD1D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.158 0.085 + 0.036*SL 0.081 + 0.037*SL 0.073 + 0.038*SL
tF 0.139 0.074 + 0.032*SL 0.080 + 0.031*SL 0.075 + 0.032*SL
tPLH 0.545 0.504 + 0.020*SL 0.513 + 0.018*SL 0.518 + 0.018*SL
tPHL 0.575 0.533 + 0.021*SL 0.545 + 0.018*SL 0.554 + 0.017*SL
CK to QN tR 0.145 0.073 + 0.036*SL 0.065 + 0.038*SL 0.060 + 0.039*SL
tF 0.128 0.067 + 0.031*SL 0.064 + 0.031*SL 0.060 + 0.032*SL
tPLH 0.662 0.624 + 0.019*SL 0.630 + 0.018*SL 0.632 + 0.017*SL
tPHL 0.644 0.605 + 0.020*SL 0.614 + 0.017*SL 0.619 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.116 0.080 + 0.018*SL 0.080 + 0.018*SL 0.073 + 0.019*SL
tF 0.109 0.072 + 0.018*SL 0.079 + 0.017*SL 0.080 + 0.016*SL
tPLH 0.541 0.515 + 0.013*SL 0.528 + 0.010*SL 0.539 + 0.009*SL
tPHL 0.577 0.549 + 0.014*SL 0.563 + 0.011*SL 0.580 + 0.009*SL
CK to QN tR 0.108 0.072 + 0.018*SL 0.071 + 0.018*SL 0.062 + 0.019*SL
tF 0.103 0.068 + 0.017*SL 0.072 + 0.016*SL 0.069 + 0.017*SL
tPLH 0.709 0.685 + 0.012*SL 0.695 + 0.010*SL 0.704 + 0.009*SL
tPHL 0.691 0.664 + 0.013*SL 0.676 + 0.010*SL 0.690 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-306 Samsung ASIC
FD1CS/FD1CSD2
D Flip-Flop with Scan Clock, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD1CS FD1CSD2 FD1CS FD1CSD2
D SI CK SCK D SI CK SCK
0.6 0.5 0.5 1.4 0.6 0.5 0.86 1.4 8.00 8.33
Parameter Symbol Value (ns)
FD1CS FD1CSD2
Input Setup Time (D to CK) tSU 0.264 0.255
Input Hold Time (D to CK) tHD 0.153 0.138
Input Setup Time (SI to SCK) tSU 0.470 0.469
Input Hold Time (SI to SCK) tHD 0.063 0.063
Pulse Width Low (CK) tPWL 0.462 0.448
Pulse Width High (CK) tPWH 0.427 0.453
Pulse Width Low (SCK) tPWL 0.410 0.410
Pulse Width High (SCK) tPWH 0.508 0.552
Q
QN
SI
SCK
D
CK
CL
CLB
Q
CL
CLB
CLB
CL
CLB
CL CL
CLB QN
SCK
SCKB
SCK
SCKB
SCKB
SCK
SCK SCK
SCKB
D
SI
CK
SCK
SCKB
Truth Table
SI SCK D CK Q
(n+1) QN
(n+1)
x00 01
x01 10
0 x001
1 x010
x 0 x Q(n) QN(n)
x x 0 Q(n) QN(n)
Samsung ASIC 3-307 STDM110
FD1CS/FD1CSD2
D Flip-Flop with Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD1CS
FD1CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.158 0.086 + 0.036*SL 0.080 + 0.037*SL 0.071 + 0.039*SL
tF 0.138 0.076 + 0.031*SL 0.076 + 0.031*SL 0.072 + 0.032*SL
tPLH 0.550 0.509 + 0.020*SL 0.519 + 0.018*SL 0.523 + 0.018*SL
tPHL 0.568 0.526 + 0.021*SL 0.538 + 0.018*SL 0.546 + 0.017*SL
SCK to Q tR 0.176 0.105 + 0.036*SL 0.103 + 0.036*SL 0.091 + 0.038*SL
tF 0.145 0.083 + 0.031*SL 0.086 + 0.031*SL 0.081 + 0.031*SL
tPLH 0.674 0.630 + 0.022*SL 0.644 + 0.018*SL 0.651 + 0.018*SL
tPHL 0.549 0.505 + 0.022*SL 0.519 + 0.018*SL 0.529 + 0.017*SL
CK to QN tR 0.164 0.086 + 0.039*SL 0.090 + 0.038*SL 0.087 + 0.038*SL
tF 0.140 0.074 + 0.033*SL 0.075 + 0.033*SL 0.078 + 0.032*SL
tPLH 0.680 0.634 + 0.023*SL 0.648 + 0.019*SL 0.659 + 0.018*SL
tPHL 0.680 0.637 + 0.021*SL 0.648 + 0.019*SL 0.656 + 0.018*SL
SCK to QN tR 0.146 0.072 + 0.037*SL 0.068 + 0.038*SL 0.061 + 0.039*SL
tF 0.129 0.068 + 0.031*SL 0.066 + 0.031*SL 0.060 + 0.032*SL
tPLH 0.635 0.597 + 0.019*SL 0.603 + 0.018*SL 0.605 + 0.017*SL
tPHL 0.774 0.735 + 0.020*SL 0.745 + 0.017*SL 0.749 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.117 0.079 + 0.019*SL 0.081 + 0.018*SL 0.074 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.079 + 0.017*SL 0.079 + 0.017*SL
tPLH 0.550 0.523 + 0.013*SL 0.536 + 0.010*SL 0.549 + 0.009*SL
tPHL 0.566 0.537 + 0.014*SL 0.551 + 0.011*SL 0.568 + 0.009*SL
SCK to Q tR 0.138 0.099 + 0.019*SL 0.105 + 0.018*SL 0.095 + 0.019*SL
tF 0.115 0.079 + 0.018*SL 0.087 + 0.016*SL 0.088 + 0.016*SL
tPLH 0.683 0.654 + 0.014*SL 0.670 + 0.011*SL 0.688 + 0.009*SL
tPHL 0.555 0.526 + 0.015*SL 0.541 + 0.011*SL 0.560 + 0.009*SL
CK to QN tR 0.121 0.079 + 0.021*SL 0.087 + 0.019*SL 0.088 + 0.019*SL
tF 0.110 0.073 + 0.018*SL 0.077 + 0.017*SL 0.081 + 0.017*SL
tPLH 0.721 0.693 + 0.014*SL 0.705 + 0.011*SL 0.725 + 0.009*SL
tPHL 0.730 0.702 + 0.014*SL 0.714 + 0.011*SL 0.730 + 0.010*SL
SCK to QN tR 0.108 0.072 + 0.018*SL 0.071 + 0.018*SL 0.062 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.071 + 0.016*SL 0.067 + 0.017*SL
tPLH 0.688 0.664 + 0.012*SL 0.674 + 0.009*SL 0.682 + 0.009*SL
tPHL 0.838 0.812 + 0.013*SL 0.824 + 0.010*SL 0.837 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
f
STDM110 3-308 Samsung ASIC
FD1S/FD1SD2
D Flip-Flop with Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD1S FD1SD2 FD1S FD1SD2
D CK TI TE D CK TI TE
0.5 0.5 0.5 1.2 0.5 0.5 0.5 1.1 6.67 7.00
Parameter Symbol Value (ns)
FD1S FD1SD2
Input Setup Time (D to CK) tSU 0.479 0.457
Input Hold Time (D to CK) tHD 0.057 0.059
Input Setup Time (TI to CK) tSU 0.515 0.495
Input Hold Time (TI to CK) tHD 0.005 0.002
Input Setup Time (TE to CK) tSU 0.531 0.524
Input Hold Time (TE to CK) tHD 0.003 0.007
Pulse Width Low (CK) tPWL 0.639 0.611
Pulse Width High (CK) tPWH 0.419 0.434
Q
QN
D
TI
TE
CK
CL
CLB
Q
CLB
CL
QN
D
CK CL
CLB
TE
TI
TE TEB
TE
CLB
CL
CL
CLB
TEB
Truth Table
DTITECK
Q
(n+1) QN
(n+1)
0x0 01
1x0 10
x01 01
x11 10
x x x Q(n) QN(n)
Samsung ASIC 3-309 STDM110
FD1S/FD1SD2
D Flip-Flop with Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD1S
FD1SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.158 0.085 + 0.036*SL 0.081 + 0.038*SL 0.075 + 0.038*SL
tF 0.139 0.075 + 0.032*SL 0.080 + 0.031*SL 0.075 + 0.032*SL
tPLH 0.554 0.513 + 0.020*SL 0.522 + 0.018*SL 0.527 + 0.018*SL
tPHL 0.594 0.552 + 0.021*SL 0.563 + 0.018*SL 0.573 + 0.017*SL
CK to QN tR 0.146 0.073 + 0.036*SL 0.067 + 0.038*SL 0.061 + 0.039*SL
tF 0.128 0.067 + 0.031*SL 0.065 + 0.031*SL 0.061 + 0.032*SL
tPLH 0.682 0.643 + 0.019*SL 0.650 + 0.018*SL 0.651 + 0.017*SL
tPHL 0.654 0.614 + 0.020*SL 0.624 + 0.017*SL 0.629 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.117 0.080 + 0.018*SL 0.082 + 0.018*SL 0.074 + 0.019*SL
tF 0.111 0.074 + 0.018*SL 0.080 + 0.017*SL 0.081 + 0.017*SL
tPLH 0.549 0.524 + 0.013*SL 0.536 + 0.010*SL 0.548 + 0.009*SL
tPHL 0.597 0.568 + 0.014*SL 0.582 + 0.011*SL 0.598 + 0.010*SL
CK to QN tR 0.108 0.071 + 0.018*SL 0.072 + 0.018*SL 0.061 + 0.019*SL
tF 0.101 0.066 + 0.017*SL 0.070 + 0.016*SL 0.067 + 0.017*SL
tPLH 0.725 0.701 + 0.012*SL 0.711 + 0.010*SL 0.720 + 0.009*SL
tPHL 0.695 0.668 + 0.013*SL 0.680 + 0.010*SL 0.694 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-310 Samsung ASIC
FD1SQ/FD1SQD2
D Flip-Flop with Scan, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD1SQ FD1SQD2 FD1SQ FD1SQD2
D CK TI TE D CK TI TE
0.5 0.5 0.5 1.1 0.5 0.6 0.5 1.2 6.00 6.00
Parameter Symbol Value (ns)
FD1SQ FD1SQD2
Input Setup Time (D to CK) tSU 0.453 0.501
Input Hold Time (D to CK) tHD 0.056 0.043
Input Setup Time (TI to CK) tSU 0.492 0.515
Input Hold Time (TI to CK) tHD 0.000 0.006
Input Setup Time (TE to CK) tSU 0.520 0.537
Input Hold Time (TE to CK) tHD 0.001 0.000
Pulse Width Low (CK) tPWL 0.608 0.635
Pulse Width High (CK) tPWH 0.385 0.433
QD
TI
TE
CK
CL
CLB
Q
CLB
CL
CLB
CL CL
CLB
CK CL
CLB
TE TEB
TE
D
TE
TI
TEB
Truth Table
DTITECK
Q
(n+1)
0x0 0
1x0 1
x01 0
x11 1
x x x Q(n)
Samsung ASIC 3-311 STDM110
FD1SQ/FD1SQD2
D Flip-Flop with Scan, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD1SQ
FD1SQD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.151 0.079 + 0.036*SL 0.073 + 0.038*SL 0.065 + 0.039*SL
tF 0.137 0.071 + 0.033*SL 0.071 + 0.033*SL 0.066 + 0.034*SL
tPLH 0.520 0.481 + 0.020*SL 0.489 + 0.018*SL 0.491 + 0.017*SL
tPHL 0.568 0.526 + 0.021*SL 0.536 + 0.019*SL 0.542 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.116 0.079 + 0.018*SL 0.080 + 0.018*SL 0.069 + 0.019*SL
tF 0.104 0.068 + 0.018*SL 0.075 + 0.017*SL 0.072 + 0.017*SL
tPLH 0.554 0.529 + 0.013*SL 0.541 + 0.010*SL 0.552 + 0.009*SL
tPHL 0.587 0.560 + 0.014*SL 0.572 + 0.011*SL 0.587 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-312 Samsung ASIC
FD1Q/FD1QD2
D Flip-Flop with Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD1Q FD1QD2 FD1Q FD1QD2
DCKDCK
0.6 0.6 0.6 0.5 4.33 4.67
Parameter Symbol Value (ns)
FD1Q FD1QD2
Input Setup Time (D to CK) tSU 0.254 0.265
Input Hold Time (D to CK) tHD 0.138 0.156
Pulse Width Low (CK) tPWL 0.455 0.459
Pulse Width High (CK) tPWH 0.388 0.402
D
CK
Q
CL
CLB
Q
CLB
CL CL
CLB
D
CK CL
CLB
CL
CLB
Truth Table
D CK Q (n+1)
00
11
x Q (n)
Samsung ASIC 3-313 STDM110
FD1Q/FD1QD2
D Flip-Flop with Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD1Q
FD1QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.149 0.078 + 0.036*SL 0.074 + 0.037*SL 0.066 + 0.038*SL
tF 0.137 0.071 + 0.033*SL 0.072 + 0.033*SL 0.065 + 0.034*SL
tPLH 0.515 0.476 + 0.020*SL 0.485 + 0.017*SL 0.487 + 0.017*SL
tPHL 0.554 0.511 + 0.021*SL 0.522 + 0.019*SL 0.528 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.113 0.077 + 0.018*SL 0.076 + 0.018*SL 0.067 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.073 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.522 0.497 + 0.012*SL 0.509 + 0.010*SL 0.519 + 0.009*SL
tPHL 0.556 0.530 + 0.013*SL 0.542 + 0.010*SL 0.557 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-314 Samsung ASIC
FD2/FD2D2
D Flip-Flop with Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD2 FD2D2 FD2 FD2D2
D CK RN D CK RN
0.6 0.5 1.4 0.5 0.5 1.4 5.67 6.33
Parameter Symbol Value (ns)
FD2 FD2D2
Input Setup Time (D to CK) tSU 0.299 0.273
Input Hold Time (D to CK) tHD 0.178 0.181
Pulse Width Low (CK) tPWL 0.495 0.504
Pulse Width High (CK) tPWH 0.462 0.474
Pulse Width Low (RN) tPWL 0.345 0.387
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.624 0.601[
D
CK
Q
QN
RN
CL
CLB
Q
CLB
CL
CLB
CL CL
CLB
D
CK CL
CLB
RN
QN
RN RN
RN
Truth Table
D CK RN Q (n+1) QN (n+1)
0 101
1 110
xx001
x 1 Q (n) QN (n)
Samsung ASIC 3-315 STDM110
FD2/FD2D2
D Flip-Flop with Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2
FD2D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.178 0.102 + 0.038*SL 0.107 + 0.037*SL 0.102 + 0.037*SL
tF 0.150 0.081 + 0.035*SL 0.088 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.623 0.577 + 0.023*SL 0.591 + 0.020*SL 0.603 + 0.018*SL
tPHL 0.602 0.556 + 0.023*SL 0.569 + 0.020*SL 0.580 + 0.018*SL
RN to Q tF 0.151 0.083 + 0.034*SL 0.086 + 0.033*SL 0.083 + 0.033*SL
tPHL 0.274 0.229 + 0.023*SL 0.241 + 0.020*SL 0.251 + 0.018*SL
CK to QN tR 0.145 0.075 + 0.035*SL 0.068 + 0.037*SL 0.062 + 0.038*SL
tF 0.137 0.072 + 0.032*SL 0.071 + 0.033*SL 0.064 + 0.034*SL
tPLH 0.687 0.649 + 0.019*SL 0.655 + 0.017*SL 0.657 + 0.017*SL
tPHL 0.735 0.693 + 0.021*SL 0.704 + 0.018*SL 0.709 + 0.018*SL
RN to QN tR 0.167 0.090 + 0.039*SL 0.097 + 0.037*SL 0.095 + 0.037*SL
tPLH 0.400 0.354 + 0.023*SL 0.368 + 0.020*SL 0.382 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.133 0.091 + 0.021*SL 0.099 + 0.019*SL 0.100 + 0.019*SL
tF 0.112 0.076 + 0.018*SL 0.081 + 0.017*SL 0.085 + 0.016*SL
tPLH 0.596 0.566 + 0.015*SL 0.581 + 0.011*SL 0.601 + 0.009*SL
tPHL 0.607 0.578 + 0.015*SL 0.592 + 0.011*SL 0.611 + 0.009*SL
RN to Q tF 0.109 0.072 + 0.019*SL 0.079 + 0.017*SL 0.082 + 0.016*SL
tPHL 0.260 0.232 + 0.014*SL 0.245 + 0.011*SL 0.262 + 0.009*SL
CK to QN tR 0.109 0.073 + 0.018*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.077 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.749 0.724 + 0.012*SL 0.735 + 0.010*SL 0.744 + 0.009*SL
tPHL 0.765 0.738 + 0.014*SL 0.751 + 0.010*SL 0.767 + 0.009*SL
RN to QN tR 0.122 0.080 + 0.021*SL 0.088 + 0.019*SL 0.091 + 0.019*SL
tPLH 0.435 0.406 + 0.014*SL 0.419 + 0.011*SL 0.439 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-316 Samsung ASIC
FD2CS/FD2CSD2
D Flip-Flop with Reset, Scan Clock, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD2CS FD2CSD2 FD2CS FD2CSD2
D SI CK SCK RN D SI CK SCK RN
0.6 0.6 0.6 1.5 2.1 0.6 0.6 0.6 1.5 2.1 9.33 9.67
Q
QN
SI
SCK
D
CK RN
DQ
CL
CLB
CL CL
CLB QN
CLB SCK
SCKB
SCK
SCKB
SCKB
SCK
SI
RN
RN
RN
CL
CLB
SCK SCK
SCKB
CK RN RN
CL
CLB
SCKB
SCK
Truth Table
SI SCK D CK RN Q
(n+1) QN
(n+1)
x00 10 1
x01 11 0
0x0101
1x0110
xxxx00 1
x x 0 1 Q(n) QN(n)
x 0 x 1 Q(n) QN(n)
Samsung ASIC 3-317 STDM110
FD2CS/FD2CSD2
D Flip-Flop with Reset, Scan Clock, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD2CS FD2CSD2
Input Setup Time (D to CK) tSU 0.302 0.298
Input Hold Time (D to CK) tHD 0.174 0.178
Input Setup Time (SI to SCK) tSU 0.493 0.515
Input Hold Time (SI to SCK) tHD 0.030 0.025
Pulse Width Low (CK) tPWL 0.504 0.499
Pulse Width High (CK) tPWH 0.483 0.536
Pulse Width Low (SCK) tPWL 0.466 0.473
Pulse Width High (SCK) tPWH 0.583 0.623
Pulse Width Low (RN) tPWL 0.436 0.476
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.632 0.618
Recovery Time (RN to SCK) tRC 0.000 0.000
Removal Time (RN to SCK) tRM 0.574 0.622
STDM110 3-318 Samsung ASIC
FD2CS/FD2CSD2
D Flip-Flop with Reset, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2CS
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.176 0.103 + 0.037*SL 0.103 + 0.037*SL 0.100 + 0.037*SL
tF 0.147 0.081 + 0.033*SL 0.083 + 0.032*SL 0.080 + 0.033*SL
tPLH 0.630 0.585 + 0.022*SL 0.599 + 0.019*SL 0.608 + 0.018*SL
tPHL 0.598 0.554 + 0.022*SL 0.565 + 0.019*SL 0.574 + 0.018*SL
SCK to Q tR 0.193 0.121 + 0.036*SL 0.124 + 0.036*SL 0.117 + 0.037*SL
tF 0.154 0.087 + 0.033*SL 0.093 + 0.032*SL 0.088 + 0.033*SL
tPLH 0.763 0.716 + 0.024*SL 0.732 + 0.020*SL 0.745 + 0.018*SL
tPHL 0.589 0.544 + 0.023*SL 0.557 + 0.019*SL 0.568 + 0.018*SL
RN to Q tF 0.149 0.083 + 0.033*SL 0.084 + 0.032*SL 0.080 + 0.033*SL
tPHL 0.274 0.230 + 0.022*SL 0.241 + 0.019*SL 0.250 + 0.018*SL
CK to QN tR 0.170 0.093 + 0.038*SL 0.100 + 0.037*SL 0.096 + 0.037*SL
tF 0.155 0.085 + 0.035*SL 0.090 + 0.034*SL 0.092 + 0.034*SL
tPLH 0.728 0.681 + 0.023*SL 0.696 + 0.020*SL 0.710 + 0.018*SL
tPHL 0.804 0.757 + 0.024*SL 0.770 + 0.020*SL 0.780 + 0.019*SL
SCK to QN tR 0.151 0.080 + 0.035*SL 0.074 + 0.037*SL 0.066 + 0.038*SL
tF 0.145 0.081 + 0.032*SL 0.079 + 0.032*SL 0.072 + 0.033*SL
tPLH 0.691 0.652 + 0.020*SL 0.661 + 0.018*SL 0.663 + 0.017*SL
tPHL 0.898 0.854 + 0.022*SL 0.866 + 0.019*SL 0.874 + 0.018*SL
RN to QN tR 0.177 0.093 + 0.042*SL 0.100 + 0.040*SL 0.115 + 0.038*SL
tPLH 0.412 0.363 + 0.024*SL 0.374 + 0.022*SL 0.387 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-319 STDM110
FD2CS/FD2CSD2
D Flip-Flop with Reset, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.137 0.097 + 0.020*SL 0.104 + 0.018*SL 0.104 + 0.018*SL
tF 0.115 0.078 + 0.019*SL 0.085 + 0.017*SL 0.086 + 0.017*SL
tPLH 0.657 0.628 + 0.015*SL 0.643 + 0.011*SL 0.663 + 0.009*SL
tPHL 0.617 0.588 + 0.015*SL 0.601 + 0.011*SL 0.620 + 0.010*SL
SCK to Q tR 0.153 0.112 + 0.020*SL 0.122 + 0.018*SL 0.124 + 0.018*SL
tF 0.121 0.084 + 0.019*SL 0.091 + 0.017*SL 0.096 + 0.016*SL
tPLH 0.780 0.749 + 0.015*SL 0.765 + 0.012*SL 0.789 + 0.009*SL
tPHL 0.613 0.583 + 0.015*SL 0.597 + 0.011*SL 0.618 + 0.010*SL
RN to Q tF 0.111 0.075 + 0.018*SL 0.080 + 0.017*SL 0.082 + 0.017*SL
tPHL 0.267 0.238 + 0.014*SL 0.251 + 0.011*SL 0.269 + 0.010*SL
CK to QN tR 0.122 0.080 + 0.021*SL 0.089 + 0.019*SL 0.092 + 0.018*SL
tF 0.116 0.079 + 0.018*SL 0.083 + 0.017*SL 0.088 + 0.017*SL
tPLH 0.777 0.750 + 0.014*SL 0.762 + 0.011*SL 0.782 + 0.009*SL
tPHL 0.867 0.838 + 0.015*SL 0.852 + 0.011*SL 0.869 + 0.010*SL
SCK to QN tR 0.109 0.074 + 0.018*SL 0.072 + 0.018*SL 0.064 + 0.019*SL
tF 0.109 0.074 + 0.017*SL 0.078 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.750 0.726 + 0.012*SL 0.737 + 0.009*SL 0.747 + 0.009*SL
tPHL 0.957 0.930 + 0.014*SL 0.943 + 0.011*SL 0.958 + 0.009*SL
RN to QN tR 0.126 0.083 + 0.022*SL 0.087 + 0.021*SL 0.101 + 0.019*SL
tPLH 0.432 0.404 + 0.014*SL 0.415 + 0.012*SL 0.430 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
fd2 d2 Ti i R i t
STDM110 3-320 Samsung ASIC
FD2S/FD2SD2
D Flip-Flop with Reset, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD2S FD2SD2 FD2S FD2SD2
D CK RN TI TE D CK RN TI TE
0.5 0.6 1.4 0.6 1.2 0.5 0.6 1.4 0.6 1.2 7.67 8.00
Parameter Symbol Value (ns)
FD2S FD2SD2
Input Setup Time (D to CK) tSU 0.497 0.505
Input Hold Time (D to CK) tHD 0.128 0.121
Input Setup Time (TI to CK) tSU 0.548 0.558
Input Hold Time (TI to CK) tHD 0.036 0.064
Input Setup Time (TE to CK) tSU 0.559 0.560
Input Hold Time (TE to CK) tHD 0.079 0.069
Pulse Width Low (CK) tPWL 0.657 0.663
Pulse Width High (CK) tPWH 0.474 0.507
Pulse Width Low (RN) tPWL 0.345 0.395
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.593 0.596
Q
QN
D
TI
TE
CK RN
CL
CLB
Q
CLB
CL
QN
CK CL
CLB
TE TEB
TE
RN
RN RN
D
TE
TI
TEB
CLB
CL RN
CL
CLB
Truth Table
DTITECKRNQ
(n+1) QN
(n+1)
0x0 10 1
1x0 11 0
x01 10 1
x11 11 0
xxxx001
x x x 1 Q(n) QN(n)
Samsung ASIC 3-321 STDM110
FD2S/FD2SD2
D Flip-Flop with Reset, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2S
FD2SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.180 0.103 + 0.039*SL 0.106 + 0.038*SL 0.101 + 0.038*SL
tF 0.144 0.079 + 0.032*SL 0.085 + 0.031*SL 0.083 + 0.031*SL
tPLH 0.640 0.593 + 0.023*SL 0.607 + 0.020*SL 0.618 + 0.018*SL
tPHL 0.624 0.580 + 0.022*SL 0.592 + 0.019*SL 0.603 + 0.017*SL
RN to Q tF 0.144 0.080 + 0.032*SL 0.084 + 0.031*SL 0.081 + 0.031*SL
tPHL 0.269 0.226 + 0.022*SL 0.237 + 0.019*SL 0.247 + 0.017*SL
CK to QN tR 0.146 0.074 + 0.036*SL 0.069 + 0.037*SL 0.062 + 0.038*SL
tF 0.133 0.071 + 0.031*SL 0.072 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.714 0.676 + 0.019*SL 0.683 + 0.017*SL 0.685 + 0.017*SL
tPHL 0.750 0.709 + 0.020*SL 0.720 + 0.018*SL 0.726 + 0.017*SL
RN to QN tR 0.168 0.090 + 0.039*SL 0.097 + 0.037*SL 0.096 + 0.037*SL
tPLH 0.400 0.354 + 0.023*SL 0.368 + 0.020*SL 0.382 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.136 0.094 + 0.021*SL 0.102 + 0.019*SL 0.103 + 0.019*SL
tF 0.111 0.073 + 0.019*SL 0.081 + 0.017*SL 0.084 + 0.016*SL
tPLH 0.641 0.611 + 0.015*SL 0.625 + 0.011*SL 0.646 + 0.009*SL
tPHL 0.623 0.594 + 0.014*SL 0.607 + 0.011*SL 0.626 + 0.009*SL
RN to Q tF 0.111 0.074 + 0.018*SL 0.079 + 0.017*SL 0.085 + 0.016*SL
tPHL 0.267 0.238 + 0.014*SL 0.251 + 0.011*SL 0.269 + 0.010*SL
CK to QN tR 0.108 0.072 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.076 + 0.016*SL 0.073 + 0.016*SL
tPLH 0.757 0.733 + 0.012*SL 0.743 + 0.010*SL 0.752 + 0.009*SL
tPHL 0.808 0.780 + 0.014*SL 0.793 + 0.010*SL 0.808 + 0.009*SL
RN to QN tR 0.123 0.081 + 0.021*SL 0.089 + 0.019*SL 0.093 + 0.019*SL
tPLH 0.438 0.409 + 0.014*SL 0.421 + 0.011*SL 0.443 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-322 Samsung ASIC
FD2SQ/FD2SQD2
D Flip-Flop with Reset, Scan, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD2SQ FD2SQD2 FD2SQ FD2SQD2
D CK RN TI TE D CK RN TI TE
0.5 0.6 1.4 0.6 1.2 0.5 0.6 1.4 0.5 1.2 7.00 7.33
Parameter Symbol Value (ns)
FD2SQ FD2SQD2
Input Setup Time (D to CK) tSU 0.501 0.505
Input Hold Time (D to CK) tHD 0.120 0.114
Input Setup Time (TI to CK) tSU 0.553 0.534
Input Hold Time (TI to CK) tHD 0.063 0.061
Input Setup Time (TE to CK) tSU 0.563 0.563
Input Hold Time (TE to CK) tHD 0.072 0.059
Pulse Width Low (CK) tPWL 0.656 0.655
Pulse Width High (CK) tPWH 0.441 0.461
Pulse Width Low (RN) tPWL 0.295 0.322
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.598 0.600
QD
TI
TE
CK RN
CL
CLB
Q
CLB
CL
CLB
CL CL
CLB
CK CL
CLB
TE TEB
TE
RN
RN RN
D
TE
TI
TEB
RN
Truth Table
D TI TE CK RN Q (n+1)
0x0 10
1x0 11
x01 10
x11 11
xxxx00
x x x 1 Q(n)
Samsung ASIC 3-323 STDM110
FD2SQ/FD2SQD2
D Flip-Flop with Reset, Scan, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2SQ
FD2SQD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.167 0.093 + 0.037*SL 0.091 + 0.037*SL 0.085 + 0.038*SL
tF 0.134 0.072 + 0.031*SL 0.072 + 0.031*SL 0.067 + 0.032*SL
tPLH 0.603 0.559 + 0.022*SL 0.572 + 0.019*SL 0.579 + 0.018*SL
tPHL 0.593 0.552 + 0.021*SL 0.564 + 0.018*SL 0.570 + 0.017*SL
RN to Q tF 0.135 0.073 + 0.031*SL 0.075 + 0.031*SL 0.069 + 0.032*SL
tPHL 0.248 0.207 + 0.021*SL 0.218 + 0.018*SL 0.225 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.128 0.087 + 0.020*SL 0.094 + 0.018*SL 0.091 + 0.019*SL
tF 0.105 0.069 + 0.018*SL 0.076 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.612 0.584 + 0.014*SL 0.598 + 0.011*SL 0.616 + 0.009*SL
tPHL 0.598 0.570 + 0.014*SL 0.583 + 0.011*SL 0.599 + 0.009*SL
RN to Q tF 0.106 0.070 + 0.018*SL 0.077 + 0.016*SL 0.074 + 0.017*SL
tPHL 0.249 0.221 + 0.014*SL 0.234 + 0.011*SL 0.250 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-324 Samsung ASIC
FD2Q/FD2QD2
D Flip-Flop with Reset, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD2Q FD2QD2 FD2Q FD2QD2
D CK RN D CK RN
0.6 0.6 1.4 0.6 0.6 1.4 5.33 5.67
Parameter Symbol Value (ns)
FD2Q FD2QD2
Input Setup Time (D to CK) tSU 0.291 0.275
Input Hold Time (D to CK) tHD 0.159 0.168
Pulse Width Low (CK) tPWL 0.492 0.479
Pulse Width High (CK) tPWH 0.440 0.459
Pulse Width Low (RN) tPWL 0.294 0.326
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.651 0.629
D
CK
Q
RN
CL
CLB
Q
CLB
CL
CL
CLB
D
CK CL
CLB
RN
RN RN
RN
CLB
CL
Truth Table
D CK RN Q (n+1)
010
111
xx00
x x Q (n)
Samsung ASIC 3-325 STDM110
FD2Q/FD2QD2
D Flip-Flop with Reset, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD2Q
FD2QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.166 0.095 + 0.036*SL 0.092 + 0.036*SL 0.086 + 0.037*SL
tF 0.136 0.074 + 0.031*SL 0.075 + 0.031*SL 0.070 + 0.032*SL
tPLH 0.606 0.562 + 0.022*SL 0.576 + 0.018*SL 0.583 + 0.017*SL
tPHL 0.576 0.534 + 0.021*SL 0.546 + 0.018*SL 0.553 + 0.017*SL
RN to Q tF 0.136 0.073 + 0.031*SL 0.075 + 0.031*SL 0.069 + 0.032*SL
tPHL 0.249 0.207 + 0.021*SL 0.218 + 0.018*SL 0.225 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.128 0.089 + 0.020*SL 0.094 + 0.018*SL 0.091 + 0.019*SL
tF 0.105 0.069 + 0.018*SL 0.077 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.612 0.583 + 0.014*SL 0.598 + 0.011*SL 0.616 + 0.009*SL
tPHL 0.584 0.556 + 0.014*SL 0.569 + 0.011*SL 0.586 + 0.009*SL
RN to Q tF 0.106 0.071 + 0.018*SL 0.076 + 0.016*SL 0.074 + 0.016*SL
tPHL 0.250 0.223 + 0.014*SL 0.236 + 0.011*SL 0.252 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-326 Samsung ASIC
FD3/FD3D2
D Flip-Flop with Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD3 FD3D2 FD3 FD3D2
D CK SN D CK SN
0.6 0.5 1.5 0.6 0.5 1.5 5.67 6.33
Parameter Symbol Value (ns)
FD3 FD3D2
Input Setup Time (D to CK) tSU 0.279 0.279
Input Hold Time (D to CK) tHD 0.128 0.128
Pulse Width Low (CK) tPWL 0.519 0.519
Pulse Width High (CK) tPWH 0.428 0.457
Pulse Width Low (SN) tPWL 0.381 0.428
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.327 0.329
D
CK
Q
QN
SN
Q
CLB
CL
CLB
CL
QN
D
CK CL
CLB
CL
CLB
SN SN
SN
CLB
CL
SN
Truth Table
D CK SN Q (n+1) QN (n+1)
0 101
1 110
xx010
x 1 Q (n) QN (n)
Samsung ASIC 3-327 STDM110
FD3/FD3D2
D Flip-Flop with Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3
FD3D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.160 0.089 + 0.036*SL 0.085 + 0.037*SL 0.078 + 0.038*SL
tF 0.151 0.083 + 0.034*SL 0.086 + 0.033*SL 0.083 + 0.033*SL
tPLH 0.554 0.513 + 0.020*SL 0.523 + 0.018*SL 0.528 + 0.017*SL
tPHL 0.627 0.583 + 0.022*SL 0.594 + 0.019*SL 0.603 + 0.018*SL
SN to Q tR 0.165 0.096 + 0.035*SL 0.090 + 0.036*SL 0.081 + 0.037*SL
tPLH 0.534 0.493 + 0.020*SL 0.504 + 0.018*SL 0.509 + 0.017*SL
CK to QN tR 0.163 0.090 + 0.036*SL 0.089 + 0.037*SL 0.083 + 0.037*SL
tF 0.137 0.074 + 0.032*SL 0.075 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.764 0.721 + 0.021*SL 0.734 + 0.018*SL 0.741 + 0.017*SL
tPHL 0.679 0.637 + 0.021*SL 0.648 + 0.018*SL 0.655 + 0.017*SL
SN to QN tF 0.153 0.085 + 0.034*SL 0.091 + 0.033*SL 0.096 + 0.032*SL
tPHL 0.291 0.244 + 0.023*SL 0.257 + 0.020*SL 0.269 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.120 0.082 + 0.019*SL 0.084 + 0.018*SL 0.076 + 0.019*SL
tF 0.112 0.076 + 0.018*SL 0.082 + 0.017*SL 0.083 + 0.017*SL
tPLH 0.555 0.528 + 0.013*SL 0.541 + 0.010*SL 0.554 + 0.009*SL
tPHL 0.626 0.597 + 0.014*SL 0.611 + 0.011*SL 0.628 + 0.009*SL
SN to Q tR 0.124 0.087 + 0.019*SL 0.089 + 0.018*SL 0.081 + 0.019*SL
tPLH 0.579 0.552 + 0.014*SL 0.565 + 0.010*SL 0.580 + 0.009*SL
CK to QN tR 0.125 0.084 + 0.020*SL 0.091 + 0.019*SL 0.090 + 0.019*SL
tF 0.105 0.069 + 0.018*SL 0.076 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.818 0.790 + 0.014*SL 0.803 + 0.011*SL 0.822 + 0.009*SL
tPHL 0.725 0.697 + 0.014*SL 0.711 + 0.011*SL 0.727 + 0.009*SL
SN to QN tF 0.118 0.078 + 0.020*SL 0.087 + 0.018*SL 0.097 + 0.017*SL
tPHL 0.288 0.258 + 0.015*SL 0.271 + 0.012*SL 0.291 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-328 Samsung ASIC
FD3CS/FD3CSD2
D Flip-Flop with Set, Scan Clock, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD3CS FD3CSD2 FD3CS FD3CSD2
D SI CK SCK SN D SI CK SCK SN
0.6 0.6 0.5 1.6 2.3 0.5 0.5 0.5 1.6 2.4 9.00 9.33
Q
QN
SI
SCK
D
CK
SN
D
CL
CLB
Q
CL
CLB
CL CL
CLB QN
CLB
SN
SN
SCK
SCKB
SN SCKB
SCK
SI
CL
CLB
SCK SCK
SCKB
CK SN SN
SCKB
SCK
SCKB
SCK
Truth Table
SI SCK D CK SN Q
(n+1) QN
(n+1)
x00 10 1
x01 11 0
0x0101
1x0110
xxxx01 0
x 0 x 1 Q(n) QN(n)
x x 0 1 Q(n) QN(n)
Samsung ASIC 3-329 STDM110
FD3CS/FD3CSD2
D Flip-Flop with Set, Scan Clock, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD3CS FD3CSD2
Input Setup Time (D to CK) tSU 0.279 0.279
Input Hold Time (D to CK) tHD 0.128 0.129
Input Setup Time (SI to SCK) tSU 0.497 0.499
Input Hold Time (SI to SCK) tHD 0.044 0.043
Pulse Width Low (CK) tPWL 0.519 0.520
Pulse Width High (CK) tPWH 0.447 0.483
Pulse Width Low (SCK) tPWL 0.424 0.429
Pulse Width High (SCK) tPWH 0.541 0.590
Pulse Width Low (SN) tPWL 0.520 0.566
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.322 0.321
Recovery Time (SN to SCK) tRC 0.214 0.212
RemovalTime (SN to SCK) tRM 0.073 0.074
STDM110 3-330 Samsung ASIC
FD3CS/FD3CSD2
D Flip-Flop with Set, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3CS
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.164 0.091 + 0.036*SL 0.088 + 0.037*SL 0.080 + 0.038*SL
tF 0.152 0.085 + 0.033*SL 0.087 + 0.033*SL 0.082 + 0.033*SL
tPLH 0.563 0.522 + 0.021*SL 0.531 + 0.018*SL 0.535 + 0.018*SL
tPHL 0.631 0.586 + 0.022*SL 0.598 + 0.019*SL 0.606 + 0.018*SL
SCK to Q tR 0.184 0.112 + 0.036*SL 0.111 + 0.036*SL 0.100 + 0.037*SL
tF 0.158 0.091 + 0.034*SL 0.095 + 0.033*SL 0.092 + 0.033*SL
tPLH 0.699 0.655 + 0.022*SL 0.669 + 0.019*SL 0.677 + 0.018*SL
tPHL 0.638 0.592 + 0.023*SL 0.605 + 0.020*SL 0.615 + 0.018*SL
SN to Q tR 0.189 0.120 + 0.035*SL 0.115 + 0.036*SL 0.104 + 0.037*SL
tPLH 0.784 0.739 + 0.023*SL 0.755 + 0.019*SL 0.763 + 0.018*SL
CK to QN tR 0.195 0.115 + 0.040*SL 0.128 + 0.037*SL 0.130 + 0.037*SL
tF 0.152 0.084 + 0.034*SL 0.090 + 0.033*SL 0.092 + 0.032*SL
tPLH 0.810 0.758 + 0.026*SL 0.778 + 0.021*SL 0.798 + 0.019*SL
tPHL 0.727 0.682 + 0.023*SL 0.694 + 0.020*SL 0.704 + 0.018*SL
SCK to QN tR 0.167 0.094 + 0.036*SL 0.094 + 0.036*SL 0.087 + 0.037*SL
tF 0.141 0.078 + 0.031*SL 0.079 + 0.031*SL 0.073 + 0.032*SL
tPLH 0.778 0.735 + 0.021*SL 0.747 + 0.018*SL 0.754 + 0.017*SL
tPHL 0.830 0.788 + 0.021*SL 0.799 + 0.018*SL 0.806 + 0.017*SL
SN to QN tF 0.164 0.094 + 0.035*SL 0.097 + 0.034*SL 0.103 + 0.033*SL
tPHL 0.315 0.266 + 0.024*SL 0.280 + 0.021*SL 0.292 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-331 STDM110
FD3CS/FD3CSD2
341387D Flip-Flop with Set, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.121 0.084 + 0.019*SL 0.086 + 0.018*SL 0.078 + 0.019*SL
tF 0.114 0.078 + 0.018*SL 0.086 + 0.016*SL 0.083 + 0.017*SL
tPLH 0.570 0.543 + 0.013*SL 0.556 + 0.010*SL 0.569 + 0.009*SL
tPHL 0.635 0.607 + 0.014*SL 0.621 + 0.011*SL 0.638 + 0.009*SL
SCK to Q tR 0.143 0.104 + 0.019*SL 0.109 + 0.018*SL 0.103 + 0.018*SL
tF 0.123 0.087 + 0.018*SL 0.093 + 0.016*SL 0.093 + 0.016*SL
tPLH 0.715 0.686 + 0.015*SL 0.702 + 0.011*SL 0.720 + 0.009*SL
tPHL 0.649 0.620 + 0.015*SL 0.634 + 0.011*SL 0.653 + 0.010*SL
SN to Q tR 0.149 0.110 + 0.019*SL 0.118 + 0.017*SL 0.110 + 0.018*SL
tPLH 0.843 0.813 + 0.015*SL 0.830 + 0.011*SL 0.850 + 0.009*SL
CK to QN tR 0.146 0.099 + 0.023*SL 0.114 + 0.020*SL 0.128 + 0.019*SL
tF 0.117 0.079 + 0.019*SL 0.086 + 0.017*SL 0.091 + 0.017*SL
tPLH 0.862 0.829 + 0.016*SL 0.844 + 0.013*SL 0.874 + 0.010*SL
tPHL 0.776 0.746 + 0.015*SL 0.759 + 0.012*SL 0.778 + 0.010*SL
SCK to QN tR 0.126 0.086 + 0.020*SL 0.093 + 0.019*SL 0.090 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.079 + 0.016*SL 0.077 + 0.016*SL
tPLH 0.843 0.814 + 0.014*SL 0.828 + 0.011*SL 0.846 + 0.009*SL
tPHL 0.896 0.868 + 0.014*SL 0.881 + 0.011*SL 0.898 + 0.009*SL
SN to QN tF 0.126 0.086 + 0.020*SL 0.095 + 0.018*SL 0.100 + 0.017*SL
tPHL 0.311 0.279 + 0.016*SL 0.294 + 0.012*SL 0.315 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-332 Samsung ASIC
FD3S/FD3SD2
D Flip-Flop with Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD3S FD3SD2 FD3S FD3SD2
D CK SN TI TE D CK SN TI TE
0.5 0.5 1.5 0.6 1.2 0.5 0.5 1.5 0.6 1.2 7.33 8.00
Parameter Symbol Value (ns)
FD3S FD3SD2
Input Setup Time (D to CK) tSU 0.573 0.561
Input Hold Time (D to CK) tHD 0.007 0.025
Pulse Width Low (CK) tPWL 0.717 0.701
Pulse Width High (CK) tPWH 0.430 0.461
Pulse Width Low (SN) tPWL 0.381 0.427
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.337 0.339
Input Setup Time (TI to CK) tSU 0.558 0.543
Input Hold Time (TI to CK) tHD 0.000 0.000
Input Setup Time (TE to CK) tSU 0.591 0.577
Input Hold Time (TE to CK) tHD 0.000 0.000
Q
QN
D
TI
TE
CK
SN
CL
CLB
QN
CLB
CL
CLB
CL Q
CK CL
CLB
TE TEB
TE
SN
SN SN
D
TE
TI
TEB
CL
CLB
SN
Truth Table
DTITECKSN
Q
(n+1) QN
(n+1)
0x0 101
1x0 110
x01 101
x11 110
xxxx010
x x x 1 Q (n) QN (n)
Samsung ASIC 3-333 STDM110
FD3S/FD3SD2
D Flip-Flop with Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3S
FD3SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.161 0.089 + 0.036*SL 0.085 + 0.037*SL 0.078 + 0.038*SL
tF 0.150 0.085 + 0.033*SL 0.084 + 0.033*SL 0.082 + 0.033*SL
tPLH 0.561 0.520 + 0.020*SL 0.530 + 0.018*SL 0.535 + 0.017*SL
tPHL 0.633 0.589 + 0.022*SL 0.600 + 0.019*SL 0.609 + 0.018*SL
SN to Q tR 0.165 0.095 + 0.035*SL 0.089 + 0.036*SL 0.079 + 0.038*SL
tPLH 0.533 0.492 + 0.021*SL 0.503 + 0.018*SL 0.507 + 0.017*SL
CK to QN tR 0.166 0.093 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.038*SL
tF 0.143 0.077 + 0.033*SL 0.077 + 0.033*SL 0.071 + 0.034*SL
tPLH 0.771 0.728 + 0.021*SL 0.740 + 0.018*SL 0.748 + 0.017*SL
tPHL 0.690 0.647 + 0.021*SL 0.658 + 0.019*SL 0.664 + 0.018*SL
SN to QN tF 0.158 0.087 + 0.036*SL 0.095 + 0.034*SL 0.099 + 0.033*SL
tPHL 0.296 0.248 + 0.024*SL 0.260 + 0.021*SL 0.273 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.120 0.083 + 0.019*SL 0.084 + 0.018*SL 0.077 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.082 + 0.017*SL 0.084 + 0.017*SL
tPLH 0.564 0.538 + 0.013*SL 0.550 + 0.010*SL 0.563 + 0.009*SL
tPHL 0.630 0.602 + 0.014*SL 0.616 + 0.011*SL 0.633 + 0.009*SL
SN to Q tR 0.125 0.089 + 0.018*SL 0.090 + 0.018*SL 0.081 + 0.019*SL
tPLH 0.578 0.552 + 0.013*SL 0.565 + 0.010*SL 0.579 + 0.009*SL
CK to QN tR 0.126 0.086 + 0.020*SL 0.092 + 0.019*SL 0.089 + 0.019*SL
tF 0.106 0.070 + 0.018*SL 0.076 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.823 0.795 + 0.014*SL 0.808 + 0.011*SL 0.827 + 0.009*SL
tPHL 0.735 0.707 + 0.014*SL 0.720 + 0.011*SL 0.737 + 0.009*SL
SN to QN tF 0.118 0.079 + 0.020*SL 0.087 + 0.018*SL 0.097 + 0.017*SL
tPHL 0.288 0.258 + 0.015*SL 0.272 + 0.012*SL 0.291 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-334 Samsung ASIC
FD3SQ/FD3SQD2
D Flip-Flop with Set, Scan, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD3SQ FD3SQD2 FD3SQ FD3SQD2
D CK SN TI TE D CK SN TI TE
0.5 0.5 1.1 0.6 1.2 0.5 0.5 1.1 0.6 1.2 7.00 7.33
Parameter Symbol Value (ns)
FD3SQ FD3SQD2
Input Setup Time (D to CK) tSU 0.570 0.568
Input Hold Time (D to CK) tHD 0.008 0.008
Pulse Width Low (CK) tPWL 0.714 0.714
Pulse Width High (CK) tPWH 0.403 0.420
Pulse Width Low (SN) tPWL 0.768 0.798
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.330 0.334
Input Setup Time (TI to CK) tSU 0.556 0.554
Input Hold Time (TI to CK) tHD 0.000 0.000
Input Setup Time (TE to CK) tSU 0.590 0.588
Input Hold Time (TE to CK) tHD 0.000 0.000
QD
TI
TE
CK
SN
CL
CLB
CLB
CL CL
CLB
CK CL
CLB
TE TEB
TE
SN
SN SN
Q
D
TE
TI
TEB
CLB
CL SN
Truth Table
D TI TE CK SN Q (n+1)
0x0 10
1x0 11
x01 10
x11 11
xxxx01
x x x 1 Q (n)
Samsung ASIC 3-335 STDM110
FD3SQ/FD3SQD2
D Flip-Flop with Set, Scan, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3SQ
FD3SQD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.153 0.081 + 0.036*SL 0.076 + 0.037*SL 0.068 + 0.039*SL
tF 0.138 0.077 + 0.030*SL 0.075 + 0.031*SL 0.071 + 0.031*SL
tPLH 0.535 0.495 + 0.020*SL 0.503 + 0.018*SL 0.507 + 0.017*SL
tPHL 0.613 0.572 + 0.021*SL 0.584 + 0.018*SL 0.591 + 0.017*SL
SN to Q tR 0.169 0.099 + 0.035*SL 0.092 + 0.037*SL 0.082 + 0.038*SL
tPLH 0.868 0.823 + 0.023*SL 0.840 + 0.019*SL 0.846 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.116 0.080 + 0.018*SL 0.079 + 0.018*SL 0.071 + 0.019*SL
tF 0.109 0.074 + 0.018*SL 0.084 + 0.015*SL 0.081 + 0.016*SL
tPLH 0.544 0.518 + 0.013*SL 0.530 + 0.010*SL 0.541 + 0.009*SL
tPHL 0.630 0.602 + 0.014*SL 0.616 + 0.010*SL 0.634 + 0.009*SL
SN to Q tR 0.132 0.095 + 0.019*SL 0.100 + 0.018*SL 0.088 + 0.019*SL
tPLH 0.886 0.856 + 0.015*SL 0.876 + 0.010*SL 0.893 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-336 Samsung ASIC
FD3Q/FD3QD2
D Flip-Flop with Set, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD3Q FD3QD2 FD3Q FD3QD2
D CK SN D CK SN
0.5 0.5 1.1 0.5 0.5 1.1 5.33 5.67
Parameter Symbol Value (ns)
FD3Q FD3QD2
Input Setup Time (D to CK) tSU 0.279 0.283
Input Hold Time (D to CK) tHD 0.127 0.127
Pulse Width Low (CK) tPWL 0.514 0.396
Pulse Width High (CK) tPWH 0.394 0.410
Pulse Width Low (SN) tPWL 0.727 0.758
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.334 0.334
D
CK
Q
SN
Q
CLB
CL
CLB
CL CL
CLB
D
CK CL
CLB
CL
CLB
SN SN
SN
SN
Truth Table
D CK SN Q (n+1)
010
111
xx01
x x Q (n)
Samsung ASIC 3-337 STDM110
FD3Q/FD3QD2
D Flip-Flop with Set, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD3Q
FD3QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.153 0.081 + 0.036*SL 0.076 + 0.037*SL 0.068 + 0.038*SL
tF 0.137 0.075 + 0.031*SL 0.076 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.524 0.484 + 0.020*SL 0.492 + 0.018*SL 0.495 + 0.017*SL
tPHL 0.585 0.544 + 0.021*SL 0.555 + 0.018*SL 0.562 + 0.017*SL
SN to Q tR 0.167 0.097 + 0.035*SL 0.092 + 0.036*SL 0.081 + 0.038*SL
tPLH 0.813 0.769 + 0.022*SL 0.784 + 0.018*SL 0.790 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.115 0.078 + 0.019*SL 0.080 + 0.018*SL 0.070 + 0.019*SL
tF 0.106 0.071 + 0.017*SL 0.080 + 0.015*SL 0.076 + 0.016*SL
tPLH 0.532 0.506 + 0.013*SL 0.518 + 0.010*SL 0.529 + 0.009*SL
tPHL 0.594 0.567 + 0.013*SL 0.580 + 0.010*SL 0.597 + 0.009*SL
SN to Q tR 0.131 0.094 + 0.018*SL 0.097 + 0.018*SL 0.085 + 0.019*SL
tPLH 0.829 0.800 + 0.015*SL 0.818 + 0.010*SL 0.834 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-338 Samsung ASIC
FD4/FD4D2
D Flip-Flop with Reset, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD4 FD4D2 FD4 FD4D2
D CK RN SN D CK RN SN
0.6 0.6 1.5 1.6 0.5 0.6 1.5 1.6 6.67 7.00
Parameter Symbol Value (ns)
FD4 FD4D2
Input Setup Time (D to CK) tSU 0.273 0.273
Input Hold Time (D to CK) tHD 0.165 0.174
Pulse Width Low (CK) tPWL 0.518 0.510
Pulse Width High (CK) tPWH 0.459 0.497
Pulse Width Low (RN) tPWL 0.378 0.430
Pulse Width Low (SN) tPWL 0.397 0.451
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.633 0.616
Recovery Time (SN to CK) tRC 0.017 0.017
Removal Time (SN to CK) tRM 0.351 0.356
Removal Time (SN to RN) tRM 0.145 0.133
Recovery Time (SN to RN) tRC 0.134 0.146
D
CK
Q
QN
RN
SN
D
CK
CL
CLB
Q
CL
CLB
CL
CLB
CL CL
CLB
QN
CLB
SN
SN
RN RN
RN
RN
SN SN
Truth Table
DCKRNSNQ
(n+1) QN
(n+1)
01101
11110
xx1010
xx0101
xx0000
x 1 1 Q (n) QN (n)
Samsung ASIC 3-339 STDM110
FD4/FD4D2
D Flip-Flop with Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.177 0.102 + 0.038*SL 0.104 + 0.037*SL 0.099 + 0.038*SL
tF 0.147 0.084 + 0.031*SL 0.085 + 0.031*SL 0.082 + 0.031*SL
tPLH 0.616 0.570 + 0.023*SL 0.584 + 0.019*SL 0.594 + 0.018*SL
tPHL 0.634 0.590 + 0.022*SL 0.603 + 0.019*SL 0.612 + 0.017*SL
RN to Q tR 0.169 0.093 + 0.038*SL 0.094 + 0.037*SL 0.089 + 0.038*SL
tF 0.143 0.080 + 0.031*SL 0.080 + 0.031*SL 0.078 + 0.032*SL
tPLH 0.257 0.212 + 0.022*SL 0.226 + 0.019*SL 0.234 + 0.018*SL
tPHL 0.270 0.228 + 0.021*SL 0.240 + 0.018*SL 0.247 + 0.017*SL
SN to Q tR 0.178 0.104 + 0.037*SL 0.103 + 0.037*SL 0.098 + 0.038*SL
tPLH 0.576 0.530 + 0.023*SL 0.545 + 0.019*SL 0.555 + 0.018*SL
CK to QN tR 0.163 0.090 + 0.036*SL 0.089 + 0.037*SL 0.083 + 0.037*SL
tF 0.141 0.076 + 0.033*SL 0.077 + 0.033*SL 0.072 + 0.033*SL
tPLH 0.776 0.733 + 0.022*SL 0.746 + 0.018*SL 0.754 + 0.017*SL
tPHL 0.747 0.703 + 0.022*SL 0.715 + 0.019*SL 0.723 + 0.018*SL
RN to QN tR 0.190 0.107 + 0.041*SL 0.122 + 0.037*SL 0.127 + 0.037*SL
tPLH 0.464 0.411 + 0.027*SL 0.431 + 0.022*SL 0.452 + 0.019*SL
SN to QN tR 0.186 0.104 + 0.041*SL 0.120 + 0.037*SL 0.123 + 0.037*SL
tF 0.155 0.084 + 0.036*SL 0.090 + 0.034*SL 0.095 + 0.033*SL
tPLH 0.283 0.230 + 0.026*SL 0.249 + 0.022*SL 0.270 + 0.019*SL
tPHL 0.295 0.247 + 0.024*SL 0.261 + 0.021*SL 0.273 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-340 Samsung ASIC
FD4/FD4D2
D Flip-Flop with Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.135 0.094 + 0.021*SL 0.102 + 0.019*SL 0.101 + 0.019*SL
tF 0.114 0.077 + 0.019*SL 0.087 + 0.016*SL 0.085 + 0.017*SL
tPLH 0.619 0.589 + 0.015*SL 0.603 + 0.011*SL 0.624 + 0.009*SL
tPHL 0.638 0.609 + 0.015*SL 0.623 + 0.011*SL 0.642 + 0.009*SL
RN to Q tR 0.125 0.083 + 0.021*SL 0.092 + 0.019*SL 0.092 + 0.019*SL
tF 0.110 0.073 + 0.018*SL 0.079 + 0.017*SL 0.081 + 0.017*SL
tPLH 0.256 0.228 + 0.014*SL 0.242 + 0.011*SL 0.261 + 0.009*SL
tPHL 0.266 0.237 + 0.014*SL 0.251 + 0.011*SL 0.268 + 0.009*SL
SN to Q tR 0.137 0.096 + 0.020*SL 0.103 + 0.019*SL 0.103 + 0.019*SL
tPLH 0.628 0.599 + 0.015*SL 0.614 + 0.011*SL 0.635 + 0.009*SL
CK to QN tR 0.126 0.086 + 0.020*SL 0.092 + 0.019*SL 0.090 + 0.019*SL
tF 0.109 0.072 + 0.018*SL 0.080 + 0.016*SL 0.079 + 0.016*SL
tPLH 0.832 0.804 + 0.014*SL 0.817 + 0.011*SL 0.836 + 0.009*SL
tPHL 0.801 0.772 + 0.014*SL 0.786 + 0.011*SL 0.804 + 0.009*SL
RN to QN tR 0.145 0.098 + 0.024*SL 0.112 + 0.020*SL 0.127 + 0.019*SL
tPLH 0.508 0.475 + 0.017*SL 0.490 + 0.013*SL 0.521 + 0.010*SL
SN to QN tR 0.142 0.096 + 0.023*SL 0.109 + 0.020*SL 0.123 + 0.019*SL
tF 0.119 0.079 + 0.020*SL 0.089 + 0.017*SL 0.096 + 0.017*SL
tPLH 0.284 0.251 + 0.016*SL 0.266 + 0.013*SL 0.296 + 0.010*SL
tPHL 0.294 0.263 + 0.015*SL 0.277 + 0.012*SL 0.298 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-341 STDM110
FD4CS/FD4CSD2
D Flip-Flop with Reset, Set, Scan Clock, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD4CS FD4CSD2 FD4CS FD4CSD2
D SI CK SCK SN RN D SI CK SCK SN RN
0.6 0.6 0.6 1.4 2.5 2.2 0.6 0.6 0.6 1.4 2.4 2.2 10.33 11.00
Q
QN
SI
SCK
D
CK RN
SN
D
CL
CLB
Q
CL
CLB
CL CL
CLB
QN
CLB
SN
SNRN
RN
SCK
SCKB
SI
SCK
SCKB
SCK
SCKB
SN
RN
SCKB
SCK
CL
CLB
SCK SCK
SCKB
CK RN RN
SN SN
Truth Table
SI SCK D CK RN SN Q
(n+1) QN
(n+1)
x00 11 0 1
x01 11 1 0
0x01101
1x01110
xxxx10 1 0
xxxx01 0 1
xxxx00 0 0
x 0 x 1 1 Q(n) QN(n)
x x 0 1 1 Q(n) QN(n)
STDM110 3-342 Samsung ASIC
FD4CS/FD4CSD2
D Flip-Flop with Reset, Set, Scan Clock, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD4CS FD4CSD2
Input Setup Time (D to CK) tSU 0.308 0.308
Input Hold Time (D to CK) tHD 0.150 0.150
Input Setup Time (SI to SCK) tSU 0.520 0.521
Input Hold Time (SI to SCK) tHD 0.028 0.030
Pulse Width Low (CK) tPWL 0.550 0.550
Pulse Width High (CK) tPWH 0.485 0.528
Pulse Width Low (SCK) tPWL 0.470 0.470
Pulse Width High (SCK) tPWH 0.576 0.630
Pulse Width Low (SN) tPWL 0.559 0.619
Recovery Time (SN to CK) tRC 0.013 0.011
Removal Time (SN to CK) tRM 0.389 0.390
Recovery Time (SN to SCK) tRC 0.207 0.206
Removal Time (SN to SCK) tRM 0.117 0.118
Pulse Width Low (RN) tPWL 0.483 0.539
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.667 0.667
Recovery Time (RN to SCK) tRC 0.000 0.000
Removal Time (RN to SCK) tRM 0.604 0.611
Removal Time (SN to RN) tRM 0.105 0.106
Recovery Time (SN to RN) tRC 0.175 0.173
Samsung ASIC 3-343 STDM110
FD4CS/FD4CSD2
D Flip-Flop with Reset, Set, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4CS
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.179 0.101 + 0.039*SL 0.105 + 0.038*SL 0.099 + 0.039*SL
tF 0.149 0.085 + 0.032*SL 0.086 + 0.032*SL 0.082 + 0.032*SL
tPLH 0.626 0.579 + 0.023*SL 0.593 + 0.020*SL 0.602 + 0.019*SL
tPHL 0.630 0.586 + 0.022*SL 0.599 + 0.019*SL 0.608 + 0.018*SL
SCK to Q tR 0.196 0.119 + 0.039*SL 0.124 + 0.037*SL 0.117 + 0.038*SL
tF 0.156 0.091 + 0.033*SL 0.096 + 0.031*SL 0.093 + 0.032*SL
tPLH 0.760 0.711 + 0.024*SL 0.728 + 0.020*SL 0.740 + 0.019*SL
tPHL 0.650 0.605 + 0.023*SL 0.619 + 0.019*SL 0.630 + 0.018*SL
SN to Q tR 0.197 0.122 + 0.038*SL 0.126 + 0.037*SL 0.115 + 0.038*SL
tPLH 0.830 0.781 + 0.024*SL 0.799 + 0.020*SL 0.810 + 0.018*SL
RN to Q tR 0.170 0.093 + 0.038*SL 0.094 + 0.038*SL 0.088 + 0.039*SL
tF 0.142 0.078 + 0.032*SL 0.079 + 0.032*SL 0.075 + 0.033*SL
tPLH 0.252 0.207 + 0.022*SL 0.221 + 0.019*SL 0.229 + 0.018*SL
tPHL 0.264 0.221 + 0.021*SL 0.232 + 0.019*SL 0.239 + 0.018*SL
CK to QN tR 0.201 0.119 + 0.041*SL 0.133 + 0.038*SL 0.135 + 0.037*SL
tF 0.159 0.092 + 0.034*SL 0.095 + 0.033*SL 0.098 + 0.033*SL
tPLH 0.821 0.768 + 0.027*SL 0.788 + 0.022*SL 0.809 + 0.019*SL
tPHL 0.810 0.764 + 0.023*SL 0.777 + 0.020*SL 0.787 + 0.019*SL
SCK to QN tR 0.171 0.097 + 0.037*SL 0.096 + 0.037*SL 0.091 + 0.038*SL
tF 0.146 0.083 + 0.032*SL 0.084 + 0.031*SL 0.079 + 0.032*SL
tPLH 0.800 0.757 + 0.022*SL 0.769 + 0.019*SL 0.777 + 0.018*SL
tPHL 0.903 0.860 + 0.021*SL 0.872 + 0.018*SL 0.880 + 0.017*SL
SN to QN tR 0.210 0.116 + 0.047*SL 0.133 + 0.043*SL 0.159 + 0.039*SL
tF 0.168 0.098 + 0.035*SL 0.102 + 0.034*SL 0.105 + 0.034*SL
tPLH 0.303 0.246 + 0.028*SL 0.261 + 0.025*SL 0.281 + 0.022*SL
tPHL 0.322 0.272 + 0.025*SL 0.287 + 0.021*SL 0.299 + 0.019*SL
RN to QN tR 0.214 0.120 + 0.047*SL 0.137 + 0.043*SL 0.163 + 0.039*SL
tPLH 0.470 0.412 + 0.029*SL 0.428 + 0.025*SL 0.448 + 0.022*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-344 Samsung ASIC
FD4CS/FD4CSD2
D Flip-Flop with Reset, Set, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.139 0.099 + 0.020*SL 0.105 + 0.018*SL 0.104 + 0.018*SL
tF 0.118 0.081 + 0.018*SL 0.089 + 0.016*SL 0.087 + 0.017*SL
tPLH 0.636 0.607 + 0.014*SL 0.621 + 0.011*SL 0.641 + 0.009*SL
tPHL 0.637 0.608 + 0.014*SL 0.622 + 0.011*SL 0.640 + 0.009*SL
SCK to Q tR 0.156 0.115 + 0.020*SL 0.125 + 0.018*SL 0.124 + 0.018*SL
tF 0.127 0.091 + 0.018*SL 0.096 + 0.016*SL 0.097 + 0.016*SL
tPLH 0.778 0.748 + 0.015*SL 0.763 + 0.011*SL 0.787 + 0.009*SL
tPHL 0.668 0.639 + 0.015*SL 0.653 + 0.011*SL 0.673 + 0.010*SL
SN to Q tR 0.160 0.121 + 0.020*SL 0.128 + 0.018*SL 0.128 + 0.018*SL
tPLH 0.886 0.855 + 0.015*SL 0.871 + 0.011*SL 0.895 + 0.009*SL
RN to Q tR 0.128 0.087 + 0.020*SL 0.095 + 0.018*SL 0.095 + 0.018*SL
tF 0.113 0.078 + 0.018*SL 0.082 + 0.017*SL 0.083 + 0.017*SL
tPLH 0.256 0.228 + 0.014*SL 0.241 + 0.011*SL 0.260 + 0.009*SL
tPHL 0.270 0.242 + 0.014*SL 0.255 + 0.011*SL 0.272 + 0.009*SL
CK to QN tR 0.150 0.105 + 0.022*SL 0.117 + 0.020*SL 0.131 + 0.018*SL
tF 0.124 0.086 + 0.019*SL 0.094 + 0.017*SL 0.099 + 0.017*SL
tPLH 0.868 0.835 + 0.016*SL 0.850 + 0.013*SL 0.880 + 0.010*SL
tPHL 0.873 0.843 + 0.015*SL 0.857 + 0.012*SL 0.877 + 0.010*SL
SCK to QN tR 0.130 0.090 + 0.020*SL 0.097 + 0.018*SL 0.096 + 0.018*SL
tF 0.116 0.081 + 0.018*SL 0.086 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.867 0.839 + 0.014*SL 0.853 + 0.011*SL 0.872 + 0.009*SL
tPHL 0.984 0.956 + 0.014*SL 0.969 + 0.011*SL 0.988 + 0.009*SL
SN to QN tR 0.152 0.104 + 0.024*SL 0.112 + 0.022*SL 0.141 + 0.020*SL
tF 0.129 0.089 + 0.020*SL 0.098 + 0.018*SL 0.104 + 0.017*SL
tPLH 0.297 0.263 + 0.017*SL 0.276 + 0.013*SL 0.301 + 0.011*SL
tPHL 0.317 0.285 + 0.016*SL 0.300 + 0.012*SL 0.321 + 0.010*SL
RN to QN tR 0.159 0.111 + 0.024*SL 0.118 + 0.022*SL 0.146 + 0.020*SL
tPLH 0.518 0.484 + 0.017*SL 0.497 + 0.014*SL 0.522 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-345 STDM110
FD4S/FD4SD2
D Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD4S FD4SD2 FD4S FD4SD2
D CK RN SN TI IE D CK RN SN TI IE
0.5 0.6 1.5 1.5 0.6 1.2 0.5 0.6 1.5 1.6 0.6 1.2 8.67 9.00
Q
QN
D
TI
TE
CK RN
SN
CL
CLB CLB
CL
CLB
CL CL
CLB
CK CL
CLB
TE TEB
TE
SN
RN RN
RN
RN SN
Q
QN
SN SN
D
TE
TI
TEB
Truth Table
DTITECKRNSNQ
(n+1) QN
(n+1)
0x0 11 0 1
1x0 11 1 0
x01 11 0 1
x11 11 1 0
xxxx10 1 0
xxxx01 0 1
xxxx00 0 0
x x x 1 1 Q (n) QN (n)
STDM110 3-346 Samsung ASIC
FD4S/FD4SD2
D Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD4S FD4SD2
Input Setup Time (D to CK) tSU 0.569 0.575
Input Hold Time (D to CK) tHD 0.086 0.083
Pulse Width Low (CK) tPWL 0.728 0.735
Pulse Width High (CK) tPWH 0.490 0.520
Pulse Width Low (RN) tPWL 0.379 0.440
Pulse Width Low (SN) tPWL 0.412 0.469
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.631 0.638
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.373 0.388
Input Setup Time (TI to CK) tSU 0.570 0.577
Input Hold Time (TI to CK) tHD 0.032 0.032
Input Setup Time (TE to CK) tSU 0.589 0.595
Input Hold Time (TE to CK) tHD 0.030 0.027
Recovery Time (SN to RN) tRC 0.148 0.144
Removal Time (SN to RN) tRM 0.132 0.135
Samsung ASIC 3-347 STDM110
FD4S/FD4SD2
D Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4S
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.177 0.102 + 0.038*SL 0.104 + 0.037*SL 0.098 + 0.038*SL
tF 0.151 0.083 + 0.034*SL 0.087 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.655 0.609 + 0.023*SL 0.624 + 0.019*SL 0.634 + 0.018*SL
tPHL 0.665 0.620 + 0.023*SL 0.632 + 0.020*SL 0.641 + 0.018*SL
RN to Q tR 0.166 0.090 + 0.038*SL 0.092 + 0.037*SL 0.086 + 0.038*SL
tF 0.146 0.079 + 0.034*SL 0.079 + 0.033*SL 0.077 + 0.034*SL
tPLH 0.249 0.205 + 0.022*SL 0.218 + 0.019*SL 0.226 + 0.018*SL
tPHL 0.267 0.223 + 0.022*SL 0.234 + 0.019*SL 0.241 + 0.018*SL
SN to Q tR 0.177 0.103 + 0.037*SL 0.104 + 0.037*SL 0.097 + 0.038*SL
tPLH 0.591 0.546 + 0.023*SL 0.561 + 0.019*SL 0.570 + 0.018*SL
CK to QN tR 0.165 0.091 + 0.037*SL 0.088 + 0.038*SL 0.083 + 0.038*SL
tF 0.144 0.078 + 0.033*SL 0.078 + 0.033*SL 0.071 + 0.034*SL
tPLH 0.801 0.758 + 0.022*SL 0.770 + 0.019*SL 0.777 + 0.018*SL
tPHL 0.786 0.742 + 0.022*SL 0.754 + 0.019*SL 0.761 + 0.018*SL
RN to QN tR 0.197 0.112 + 0.043*SL 0.129 + 0.039*SL 0.135 + 0.038*SL
tPLH 0.458 0.403 + 0.027*SL 0.423 + 0.023*SL 0.447 + 0.019*SL
SN to QN tR 0.193 0.108 + 0.043*SL 0.124 + 0.039*SL 0.131 + 0.038*SL
tF 0.161 0.090 + 0.036*SL 0.095 + 0.035*SL 0.101 + 0.034*SL
tPLH 0.285 0.231 + 0.027*SL 0.250 + 0.022*SL 0.272 + 0.019*SL
tPHL 0.304 0.255 + 0.025*SL 0.269 + 0.021*SL 0.281 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-348 Samsung ASIC
FD4S/FD4SD2
D Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.136 0.095 + 0.021*SL 0.102 + 0.019*SL 0.104 + 0.019*SL
tF 0.116 0.080 + 0.018*SL 0.087 + 0.016*SL 0.087 + 0.017*SL
tPLH 0.651 0.621 + 0.015*SL 0.635 + 0.011*SL 0.656 + 0.009*SL
tPHL 0.662 0.633 + 0.015*SL 0.647 + 0.011*SL 0.665 + 0.010*SL
RN to Q tR 0.126 0.084 + 0.021*SL 0.092 + 0.019*SL 0.092 + 0.019*SL
tF 0.110 0.073 + 0.018*SL 0.078 + 0.017*SL 0.081 + 0.017*SL
tPLH 0.254 0.226 + 0.014*SL 0.239 + 0.011*SL 0.259 + 0.009*SL
tPHL 0.265 0.236 + 0.014*SL 0.250 + 0.011*SL 0.266 + 0.009*SL
SN to Q tR 0.139 0.098 + 0.020*SL 0.106 + 0.018*SL 0.103 + 0.019*SL
tPLH 0.651 0.621 + 0.015*SL 0.636 + 0.011*SL 0.657 + 0.009*SL
CK to QN tR 0.129 0.088 + 0.021*SL 0.095 + 0.019*SL 0.094 + 0.019*SL
tF 0.111 0.075 + 0.018*SL 0.083 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.864 0.835 + 0.014*SL 0.849 + 0.011*SL 0.869 + 0.009*SL
tPHL 0.845 0.816 + 0.014*SL 0.830 + 0.011*SL 0.849 + 0.009*SL
RN to QN tR 0.150 0.103 + 0.024*SL 0.116 + 0.020*SL 0.134 + 0.019*SL
tPLH 0.515 0.481 + 0.017*SL 0.497 + 0.013*SL 0.529 + 0.010*SL
SN to QN tR 0.146 0.098 + 0.024*SL 0.113 + 0.020*SL 0.131 + 0.019*SL
tF 0.123 0.085 + 0.019*SL 0.092 + 0.018*SL 0.102 + 0.017*SL
tPLH 0.293 0.259 + 0.017*SL 0.274 + 0.013*SL 0.306 + 0.010*SL
tPHL 0.306 0.275 + 0.016*SL 0.290 + 0.012*SL 0.311 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-349 STDM110
FD4SQ/FD4SQD2
D Flip-Flop with Reset, Set, Scan, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD4SQ FD4SQD2 FD4SQ FD4SQD2
D CK RN SN TI TE D CK RN SN TI TE
0.5 0.6 1.5 1.1 0.6 1.2 0.5 0.6 1.5 1.1 0.6 1.2 8.00 8.33
QD
TI
TE
CK RN
SN
CL
CLB CLB
CL
CLB
CL CL
CLB
CK CL
CLB
TE TEB
TE
SN
RN
RN
RN SN
Q
SN
RN
SN
D
TE
TI
TEB
Truth Table
D TI TE CK RN SN Q (n+1)
0x0 11 0
1x0 11 1
x01 11 0
x11 11 1
xxxx10 1
xxxx01 0
xxxx00 0
x x x 1 1 Q (n)
STDM110 3-350 Samsung ASIC
FD4SQ/FD4SQD2
D Flip-Flop with Reset, Set, Scan, Q Output Only, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD4SQ FD4SQD2
Input Setup Time (D to CK) tSU 0.605 0.604
Input Hold Time (D to CK) tHD 0.081 0.081
Pulse Width Low (CK) tPWL 0.757 0.756
Pulse Width High (CK) tPWH 0.426 0.447
Pulse Width Low (RN) tPWL 0.345 0.372
Pulse Width Low (SN) tPWL 0.775 0.806
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.629 0.629
Recovery Time (SN to CK) tRC 0.029 0.029
Removal Time (SN to CK) tRM 0.373 0.373
Input Setup Time (TI to CK) tSU 0.600 0.599
Input Hold Time (TI to CK) tHD 0.032 0.032
Input Setup Time (TE to CK) tSU 0.619 0.618
Input Hold Time (TE to CK) tHD 0.029 0.029
Removal Time (SN to RN) tRM 0.140 0.142
Recovery Time (SN to RN) tRC 0.139 0.138
Samsung ASIC 3-351 STDM110
FD4SQ/FD4SQD2
D Flip-Flop with Reset, Set, Scan, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4SQ
FD4SQD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.172 0.098 + 0.037*SL 0.096 + 0.037*SL 0.090 + 0.038*SL
tF 0.143 0.081 + 0.031*SL 0.083 + 0.031*SL 0.077 + 0.031*SL
tPLH 0.591 0.547 + 0.022*SL 0.560 + 0.019*SL 0.567 + 0.018*SL
tPHL 0.632 0.590 + 0.021*SL 0.602 + 0.018*SL 0.610 + 0.017*SL
RN to Q tR 0.164 0.090 + 0.037*SL 0.088 + 0.038*SL 0.083 + 0.038*SL
tF 0.137 0.075 + 0.031*SL 0.074 + 0.031*SL 0.070 + 0.032*SL
tPLH 0.242 0.199 + 0.021*SL 0.211 + 0.019*SL 0.217 + 0.018*SL
tPHL 0.253 0.211 + 0.021*SL 0.222 + 0.018*SL 0.228 + 0.017*SL
SN to Q tR 0.181 0.108 + 0.037*SL 0.107 + 0.037*SL 0.100 + 0.038*SL
tPLH 0.913 0.868 + 0.022*SL 0.883 + 0.019*SL 0.891 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.130 0.089 + 0.020*SL 0.097 + 0.019*SL 0.094 + 0.019*SL
tF 0.110 0.075 + 0.018*SL 0.084 + 0.015*SL 0.082 + 0.015*SL
tPLH 0.600 0.571 + 0.014*SL 0.585 + 0.011*SL 0.604 + 0.009*SL
tPHL 0.636 0.609 + 0.014*SL 0.622 + 0.010*SL 0.641 + 0.009*SL
RN to Q tR 0.123 0.082 + 0.020*SL 0.088 + 0.019*SL 0.086 + 0.019*SL
tF 0.104 0.070 + 0.017*SL 0.076 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.248 0.220 + 0.014*SL 0.233 + 0.011*SL 0.250 + 0.009*SL
tPHL 0.251 0.224 + 0.013*SL 0.237 + 0.010*SL 0.253 + 0.009*SL
SN to Q tR 0.142 0.102 + 0.020*SL 0.109 + 0.018*SL 0.104 + 0.019*SL
tPLH 0.928 0.899 + 0.015*SL 0.913 + 0.011*SL 0.934 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-352 Samsung ASIC
FD4Q/FD4QD2
D Flip-Flop with Reset, Set, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD4Q FD4QD2 FD4Q FD4QD2
D CK RN SN D CK RN SN
0.6 0.6 1.5 1.2 0.6 0.6 1.5 1.2 6.00 6.33
Parameter Symbol Value (ns)
FD4Q FD4QD2
Input Setup Time (D to CK) tSU 0.276 0.277
Input Hold Time (D to CK) tHD 0.167 0.167
Pulse Width Low (CK) tPWL 0.520 0.518
Pulse Width High (CK) tPWH 0.426 0.448
Pulse Width Low (RN) tPWL 0.343 0.375
Pulse Width Low (SN) tPWL 0.764 0.801
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.636 0.637
Recovery Time (SN to CK) tRC 0.015 0.015
Removal Time (SN to CK) tRM 0.350 0.350
Recovery Time (SN to RN) tRC 0.151 0.152
Removal Time (SN to RN) tRM 0.129 0.127
D
CK
Q
SN
RN
D
CK
CL
CLB
Q
CL
CLB
CL
CLB
CL CL
CLB
CLB
SN
SN
RN RN
RN
RN
SN SN
Truth Table
D CK RN SN Q (n+1)
0110
1111
xx101
xx010
xx000
x 1 1 Q (n)
Samsung ASIC 3-353 STDM110
FD4Q/FD4QD2
D Flip-Flop with Reset, Set, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD4Q
FD4QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.170 0.096 + 0.037*SL 0.095 + 0.037*SL 0.088 + 0.038*SL
tF 0.141 0.079 + 0.031*SL 0.081 + 0.031*SL 0.075 + 0.031*SL
tPLH 0.591 0.547 + 0.022*SL 0.560 + 0.019*SL 0.568 + 0.018*SL
tPHL 0.619 0.577 + 0.021*SL 0.590 + 0.018*SL 0.598 + 0.017*SL
RN to Q tR 0.163 0.088 + 0.037*SL 0.087 + 0.038*SL 0.082 + 0.038*SL
tF 0.136 0.073 + 0.032*SL 0.076 + 0.031*SL 0.070 + 0.032*SL
tPLH 0.243 0.200 + 0.022*SL 0.212 + 0.019*SL 0.219 + 0.018*SL
tPHL 0.256 0.214 + 0.021*SL 0.225 + 0.018*SL 0.232 + 0.017*SL
SN to Q tR 0.180 0.107 + 0.037*SL 0.107 + 0.037*SL 0.098 + 0.038*SL
tPLH 0.890 0.845 + 0.023*SL 0.859 + 0.019*SL 0.868 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.131 0.091 + 0.020*SL 0.098 + 0.019*SL 0.096 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.083 + 0.015*SL 0.083 + 0.015*SL
tPLH 0.605 0.576 + 0.014*SL 0.590 + 0.011*SL 0.609 + 0.009*SL
tPHL 0.627 0.600 + 0.014*SL 0.613 + 0.010*SL 0.632 + 0.009*SL
RN to Q tR 0.124 0.083 + 0.020*SL 0.090 + 0.019*SL 0.088 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.078 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.252 0.224 + 0.014*SL 0.237 + 0.011*SL 0.255 + 0.009*SL
tPHL 0.257 0.230 + 0.014*SL 0.243 + 0.010*SL 0.260 + 0.009*SL
SN to Q tR 0.142 0.102 + 0.020*SL 0.109 + 0.018*SL 0.108 + 0.019*SL
tPLH 0.911 0.881 + 0.015*SL 0.896 + 0.011*SL 0.916 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-354 Samsung ASIC
FD5/FD5D2
D Flip-Flop with Negative Edge Trigger, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD5 FD5D2 FD5 FD5D2
D CKN D CKN
0.6 0.5 0.6 0.5 5.00 5.33
Parameter Symbol Value (ns)
FD5 FD5D2
Input Setup Time (D to CKN) tSU 0.289 0.287
Input Hold Time (D to CKN) tHD 0.219 0.216
Pulse Width Low (CKN) tPWL 0.425 0.435
Pulse Width High (CKN) tPWH 0.425 0.435
D
CKN
Q
QN
CLN
CLBN
CLBN
CLN
CLN
CLBN CLBN
CLN
D
CKN CLN
CLBN
QN
Q
Truth Table
D CKN Q (n+1) QN (n+1)
001
110
x Q (n) QN (n)
Samsung ASIC 3-355 STDM110
FD5/FD5D2
D Flip-Flop with Negative Edge Trigger, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD5
FD5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.158 0.085 + 0.037*SL 0.082 + 0.037*SL 0.075 + 0.038*SL
tF 0.140 0.077 + 0.032*SL 0.080 + 0.031*SL 0.077 + 0.031*SL
tPLH 0.634 0.593 + 0.020*SL 0.602 + 0.018*SL 0.607 + 0.018*SL
tPHL 0.559 0.516 + 0.021*SL 0.528 + 0.018*SL 0.537 + 0.017*SL
CKN to QN tR 0.146 0.072 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.128 0.067 + 0.031*SL 0.064 + 0.031*SL 0.060 + 0.032*SL
tPLH 0.645 0.607 + 0.019*SL 0.613 + 0.018*SL 0.615 + 0.018*SL
tPHL 0.731 0.692 + 0.020*SL 0.701 + 0.017*SL 0.706 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.116 0.079 + 0.019*SL 0.080 + 0.018*SL 0.073 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.077 + 0.017*SL 0.079 + 0.016*SL
tPLH 0.620 0.594 + 0.013*SL 0.606 + 0.010*SL 0.618 + 0.009*SL
tPHL 0.539 0.511 + 0.014*SL 0.524 + 0.011*SL 0.542 + 0.009*SL
CKN to QN tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.063 + 0.019*SL
tF 0.102 0.068 + 0.017*SL 0.072 + 0.016*SL 0.068 + 0.017*SL
tPLH 0.670 0.646 + 0.012*SL 0.656 + 0.010*SL 0.664 + 0.009*SL
tPHL 0.770 0.743 + 0.013*SL 0.755 + 0.010*SL 0.769 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-356 Samsung ASIC
FD5S/FD5SD2
D Flip-Flop with Negative Edge Trigger, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD5S FD5SD2 FD5S FD5SD2
D CKN TI TE D CKN TI TE
0.5 0.6 0.5 1.2 0.5 0.5 0.6 1.1 6.67 7.00
Parameter Symbol Value (ns)
FD5S FD5SD2
Input Setup Time (D to CKN) tSU 0.567 0.563
Input Hold Time (D to CKN) tHD 0.143 0.136
Pulse Width Low (CKN) tPWL 0.428 0.442
Pulse Width High (CKN) tPWH 0.428 0.442
Input Setup Time (TI to CKN) tSU 0.564 0.564
Input Hold Time (TI to CKN) tHD 0.139 0.130
Input Setup Time (TE to CKN) tSU 0.592 0.587
Input Hold Time (TE to CKN) tHD 0.166 0.168
Q
QN
D
TI
TE
CKN
CLN
CLBN
CLBN
CLN
CLN
CLBN
CLN
CLBN
TE TEB
TE
Q
QN
D
TE
TI
TEB CLN
CLBN
CKN
Truth Table
D TI TE CKN Q
(n+1) QN
(n+1)
0x0 01
1x0 10
x01 01
x11 10
x x x Q (n) QN (n)
Samsung ASIC 3-357 STDM110
FD5S/FD5SD2
D Flip-Flop with Negative Edge Trigger, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD5S
FD5SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.159 0.086 + 0.036*SL 0.082 + 0.038*SL 0.075 + 0.038*SL
tF 0.139 0.074 + 0.032*SL 0.081 + 0.031*SL 0.075 + 0.032*SL
tPLH 0.646 0.605 + 0.021*SL 0.614 + 0.018*SL 0.619 + 0.018*SL
tPHL 0.557 0.514 + 0.021*SL 0.526 + 0.018*SL 0.536 + 0.017*SL
CKN to QN tR 0.146 0.073 + 0.037*SL 0.068 + 0.038*SL 0.060 + 0.039*SL
tF 0.128 0.067 + 0.031*SL 0.064 + 0.031*SL 0.060 + 0.032*SL
tPLH 0.645 0.606 + 0.019*SL 0.613 + 0.018*SL 0.615 + 0.018*SL
tPHL 0.745 0.706 + 0.020*SL 0.715 + 0.017*SL 0.720 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.117 0.080 + 0.018*SL 0.082 + 0.018*SL 0.073 + 0.019*SL
tF 0.109 0.072 + 0.018*SL 0.079 + 0.017*SL 0.080 + 0.017*SL
tPLH 0.632 0.606 + 0.013*SL 0.618 + 0.010*SL 0.630 + 0.009*SL
tPHL 0.557 0.529 + 0.014*SL 0.542 + 0.011*SL 0.559 + 0.009*SL
CKN to QN tR 0.107 0.072 + 0.018*SL 0.069 + 0.018*SL 0.061 + 0.019*SL
tF 0.101 0.066 + 0.017*SL 0.070 + 0.016*SL 0.066 + 0.017*SL
tPLH 0.684 0.660 + 0.012*SL 0.670 + 0.010*SL 0.679 + 0.009*SL
tPHL 0.777 0.750 + 0.013*SL 0.763 + 0.010*SL 0.776 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-358 Samsung ASIC
FD6/FD6D2
D Flip-Flop with Negative Edge Trigger, Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD6 FD6D2 FD6 FD6D2
D CKN RN D CKN RN
0.6 0.6 1.4 0.6 0.5 1.4 5.67 6.33
Parameter Symbol Value (ns)
FD6 FD6D2
Input Setup Time (D to CKN) tSU 0.334 0.318
Input Hold Time (D to CKN) tHD 0.181 0.222
Pulse Width Low (CKN) tPWL 0.445 0.476
Pulse Width High (CKN) tPWH 0.445 0.476
Pulse Width Low (RN) tPWL 0.597 0.543
Recovery Time (RN to CKN) tRC 0.000 0.000
Removal Time (RN to CKN) tRM 0.801 0.788
D
CKN
Q
QN
RN
CLN
CLBN
CLN
CLBN
D
CKN CLN
CLBN
CLBN
CLN
RN
RN
QN
Q
RN
CLN
CLBN
RN
Truth Table
D CKN RN Q (n+1) QN (n+1)
0 101
1 110
xx001
x 1 Q (n) QN (n)
Samsung ASIC 3-359 STDM110
FD6/FD6D2
D Flip-Flop with Negative Edge Trigger, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD6
FD6D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.179 0.103 + 0.038*SL 0.107 + 0.037*SL 0.103 + 0.037*SL
tF 0.150 0.081 + 0.035*SL 0.088 + 0.033*SL 0.084 + 0.033*SL
tPLH 0.684 0.638 + 0.023*SL 0.652 + 0.020*SL 0.663 + 0.018*SL
tPHL 0.558 0.512 + 0.023*SL 0.525 + 0.020*SL 0.536 + 0.018*SL
RN to Q tF 0.151 0.084 + 0.034*SL 0.087 + 0.033*SL 0.084 + 0.033*SL
tPHL 0.274 0.229 + 0.023*SL 0.240 + 0.020*SL 0.250 + 0.018*SL
CKN to QN tR 0.146 0.075 + 0.036*SL 0.069 + 0.037*SL 0.063 + 0.038*SL
tF 0.138 0.074 + 0.032*SL 0.071 + 0.033*SL 0.065 + 0.034*SL
tPLH 0.642 0.604 + 0.019*SL 0.611 + 0.017*SL 0.613 + 0.017*SL
tPHL 0.795 0.753 + 0.021*SL 0.763 + 0.019*SL 0.768 + 0.018*SL
RN to QN tR 0.168 0.090 + 0.039*SL 0.098 + 0.037*SL 0.096 + 0.037*SL
tPLH 0.399 0.352 + 0.023*SL 0.367 + 0.020*SL 0.381 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.134 0.093 + 0.020*SL 0.099 + 0.019*SL 0.100 + 0.019*SL
tF 0.112 0.076 + 0.018*SL 0.082 + 0.017*SL 0.085 + 0.016*SL
tPLH 0.681 0.652 + 0.015*SL 0.666 + 0.011*SL 0.686 + 0.009*SL
tPHL 0.569 0.540 + 0.015*SL 0.554 + 0.011*SL 0.572 + 0.009*SL
RN to Q tF 0.109 0.072 + 0.019*SL 0.079 + 0.017*SL 0.082 + 0.016*SL
tPHL 0.260 0.232 + 0.014*SL 0.245 + 0.011*SL 0.262 + 0.009*SL
CKN to QN tR 0.110 0.073 + 0.018*SL 0.074 + 0.018*SL 0.063 + 0.019*SL
tF 0.106 0.072 + 0.017*SL 0.077 + 0.016*SL 0.074 + 0.016*SL
tPLH 0.710 0.685 + 0.012*SL 0.696 + 0.010*SL 0.706 + 0.009*SL
tPHL 0.850 0.823 + 0.014*SL 0.836 + 0.010*SL 0.852 + 0.009*SL
RN to QN tR 0.122 0.080 + 0.021*SL 0.088 + 0.019*SL 0.091 + 0.019*SL
tPLH 0.435 0.406 + 0.014*SL 0.419 + 0.011*SL 0.440 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-360 Samsung ASIC
FD6S/FD6SD2
D Flip-Flop with Negative Edge Trigger, Reset, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD6S FD6SD2 FD6S FD6SD2
D CKN RN TI TE D CKN RN TI TE
0.6 0.5 1.4 0.6 1.2 0.6 0.6 1.4 0.6 1.2 7.67 8.00
Parameter Symbol Value (ns)
FD6S FD6SD2
Input Setup Time (D to CKN) tSU 0.614 0.617
Input Hold Time (D to CKN) tHD 0.130 0.128
Pulse Width Low (CKN) tPWL 0.459 0.493
Pulse Width High (CKN) tPWH 0.459 0.493
Pulse Width Low (RN) tPWL 0.559 0.563
Recovery Time (RN to CKN) tRC 0.000 0.000
Removal Time (RN to CKN) tRM 0.784 0.787
Input Setup Time (TI to CKN) tSU 0.595 0.598
Input Hold Time (TI to CKN) tHD 0.125 0.122
Input Setup Time (TE to CKN) tSU 0.621 0.622
Input Hold Time (TE to CKN) tHD 0.153 0.151
Q
QN
D
TI
TE
CKN RN
CLBN
CLN CLN
CLBN
CLN
CLBN
CLN
CLBN
TE TEB
TE
RN
RN RN
QN
Q
CKN
D
TE
TI
TEB
CLN
CLBN
RN
Truth Table
D TI TE CKN RN Q
(n+1) QN
(n+1)
0x0 101
1x0 110
x01 101
x11 110
xxxx001
x x x 1 Q (n) QN (n)
Samsung ASIC 3-361 STDM110
FD6S/FD6SD2
D Flip-Flop with Negative Edge Trigger, Reset, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD6S
FD6SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.180 0.104 + 0.038*SL 0.106 + 0.037*SL 0.101 + 0.038*SL
tF 0.144 0.079 + 0.033*SL 0.086 + 0.031*SL 0.082 + 0.031*SL
tPLH 0.719 0.673 + 0.023*SL 0.687 + 0.020*SL 0.698 + 0.018*SL
tPHL 0.580 0.537 + 0.022*SL 0.549 + 0.019*SL 0.560 + 0.017*SL
RN to Q tF 0.144 0.080 + 0.032*SL 0.084 + 0.031*SL 0.081 + 0.031*SL
tPHL 0.268 0.225 + 0.021*SL 0.237 + 0.019*SL 0.246 + 0.017*SL
CKN to QN tR 0.148 0.076 + 0.036*SL 0.069 + 0.038*SL 0.064 + 0.039*SL
tF 0.134 0.072 + 0.031*SL 0.071 + 0.031*SL 0.066 + 0.032*SL
tPLH 0.670 0.631 + 0.019*SL 0.638 + 0.018*SL 0.640 + 0.017*SL
tPHL 0.824 0.784 + 0.020*SL 0.794 + 0.018*SL 0.799 + 0.017*SL
RN to QN tR 0.171 0.092 + 0.039*SL 0.099 + 0.038*SL 0.098 + 0.038*SL
tPLH 0.398 0.352 + 0.023*SL 0.366 + 0.020*SL 0.380 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.136 0.095 + 0.021*SL 0.103 + 0.019*SL 0.103 + 0.019*SL
tF 0.112 0.075 + 0.019*SL 0.082 + 0.017*SL 0.084 + 0.016*SL
tPLH 0.723 0.693 + 0.015*SL 0.707 + 0.011*SL 0.728 + 0.009*SL
tPHL 0.580 0.552 + 0.014*SL 0.565 + 0.011*SL 0.584 + 0.009*SL
RN to Q tF 0.110 0.074 + 0.018*SL 0.079 + 0.017*SL 0.085 + 0.016*SL
tPHL 0.266 0.237 + 0.014*SL 0.251 + 0.011*SL 0.268 + 0.009*SL
CKN to QN tR 0.108 0.072 + 0.018*SL 0.070 + 0.018*SL 0.062 + 0.019*SL
tF 0.104 0.068 + 0.018*SL 0.075 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.715 0.691 + 0.012*SL 0.701 + 0.010*SL 0.710 + 0.009*SL
tPHL 0.885 0.858 + 0.014*SL 0.870 + 0.010*SL 0.885 + 0.009*SL
RN to QN tR 0.123 0.080 + 0.021*SL 0.089 + 0.019*SL 0.093 + 0.019*SL
tPLH 0.436 0.407 + 0.014*SL 0.420 + 0.011*SL 0.441 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-362 Samsung ASIC
FD7/FD7D2
D Flip-Flop with Negative Edge Trigger, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD7 FD7D2 FD7 FD7D2
D CKN SN D CKN SN
0.6 0.6 1.5 0.6 0.6 1.5 5.67 6.33
Parameter Symbol Value (ns)
FD7 FD7D2
Input Setup Time (D to CKN) tSU 0.326 0.326
Input Hold Time (D to CKN) tHD 0.209 0.213
Pulse Width Low (CKN) tPWL 0.443 0.465
Pulse Width High (CKN) tPWH 0.443 0.465
Pulse Width Low (SN) tPWL 0.373 0.373
Recovery Time (SN to CKN) tRC 0.018 0.019
Removal Time (SN to CKN) tRM 0.268 0.268
D
CKN
Q
QN
SN
CLN
CLBN
CLN
CLBN
CLBN
CLN
D
CKN CLN
CLBN
CLBN
CLN
SN SN
SN
QN
Q
SN
Truth Table
D CKN SN Q (n+1) QN (n+1)
0 101
1 110
xx010
x 1 Q (n) QN (n)
Samsung ASIC 3-363 STDM110
FD7/FD7D2
D Flip-Flop with Negative Edge Trigger, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD7
FD7D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.162 0.091 + 0.036*SL 0.087 + 0.037*SL 0.079 + 0.038*SL
tF 0.151 0.084 + 0.034*SL 0.087 + 0.033*SL 0.085 + 0.033*SL
tPLH 0.653 0.613 + 0.020*SL 0.622 + 0.018*SL 0.627 + 0.017*SL
tPHL 0.601 0.557 + 0.022*SL 0.568 + 0.019*SL 0.577 + 0.018*SL
SN to Q tR 0.165 0.096 + 0.035*SL 0.090 + 0.036*SL 0.081 + 0.037*SL
tPLH 0.535 0.494 + 0.020*SL 0.505 + 0.018*SL 0.509 + 0.017*SL
CKN to QN tR 0.165 0.092 + 0.036*SL 0.092 + 0.036*SL 0.084 + 0.037*SL
tF 0.138 0.075 + 0.031*SL 0.076 + 0.031*SL 0.071 + 0.032*SL
tPLH 0.741 0.698 + 0.021*SL 0.710 + 0.018*SL 0.718 + 0.017*SL
tPHL 0.780 0.738 + 0.021*SL 0.749 + 0.018*SL 0.757 + 0.017*SL
SN to QN tF 0.152 0.084 + 0.034*SL 0.092 + 0.032*SL 0.097 + 0.032*SL
tPHL 0.292 0.246 + 0.023*SL 0.259 + 0.020*SL 0.271 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.121 0.083 + 0.019*SL 0.086 + 0.018*SL 0.077 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.084 + 0.016*SL 0.082 + 0.017*SL
tPLH 0.655 0.629 + 0.013*SL 0.641 + 0.010*SL 0.654 + 0.009*SL
tPHL 0.598 0.570 + 0.014*SL 0.583 + 0.011*SL 0.601 + 0.009*SL
SN to Q tR 0.125 0.087 + 0.019*SL 0.091 + 0.018*SL 0.082 + 0.019*SL
tPLH 0.578 0.551 + 0.013*SL 0.565 + 0.010*SL 0.579 + 0.009*SL
CKN to QN tR 0.126 0.086 + 0.020*SL 0.092 + 0.019*SL 0.089 + 0.019*SL
tF 0.106 0.069 + 0.018*SL 0.077 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.792 0.763 + 0.014*SL 0.777 + 0.011*SL 0.795 + 0.009*SL
tPHL 0.828 0.800 + 0.014*SL 0.814 + 0.011*SL 0.831 + 0.009*SL
SN to QN tF 0.118 0.080 + 0.019*SL 0.086 + 0.018*SL 0.097 + 0.017*SL
tPHL 0.288 0.257 + 0.015*SL 0.271 + 0.012*SL 0.291 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-364 Samsung ASIC
FD7S/FD7SD2
D Flip-Flop with Negative Edge Trigger, Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD7S FD7SD2 FD7S FD7SD2
D CKN SN TI TE D CKN SN TI TE
0.6 0.5 1.5 0.6 1.2 0.6 0.6 1.5 0.6 1.2 7.67 8.33
Parameter Symbol Value (ns)
FD7S FD7SD2
Input Setup Time (D to CKN) tSU 0.663 0.659
Input Hold Time (D to CKN) tHD 0.117 0.117
Pulse Width Low (CKN) tPWL 0.451 0.474
Pulse Width High (CKN) tPWH 0.451 0.474
Pulse Width Low (SN) tPWL 0.362 0.362
Recovery Time (SN to CKN) tRC 0.010 0.009
Removal Time (SN to CKN) tRM 0.279 0.279
Input Setup Time (TI to CKN) tSU 0.628 0.627
Input Hold Time (TI to CKN) tHD 0.108 0.109
Input Setup Time (TE to CKN) tSU 0.663 0.658
Input Hold Time (TE to CKN) tHD 0.144 0.145
Q
QN
D
TI
TE
CKN
SN
CLBN
CLN
QN
CLN
CLBN
CLN
CLBN
Q
CKN CLN
CLBN
TE TEB
TE
SN
SN SN
D
TE
TI
TEB
CLN
CLBN
SN
Truth Table
D TI TE CKN SN Q
(n+1) QN
(n+1)
0x0 101
1x0 110
x01 101
x11 110
xxxx010
x x x 1 Q (n) QN (n)
Samsung ASIC 3-365 STDM110
FD7S/FD7SD2
D Flip-Flop with Negative Edge Trigger, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD7S
FD7SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.163 0.091 + 0.036*SL 0.086 + 0.037*SL 0.080 + 0.038*SL
tF 0.151 0.085 + 0.033*SL 0.085 + 0.033*SL 0.083 + 0.033*SL
tPLH 0.670 0.629 + 0.020*SL 0.638 + 0.018*SL 0.643 + 0.017*SL
tPHL 0.612 0.567 + 0.022*SL 0.578 + 0.019*SL 0.587 + 0.018*SL
SN to Q tR 0.166 0.096 + 0.035*SL 0.090 + 0.036*SL 0.081 + 0.038*SL
tPLH 0.534 0.493 + 0.020*SL 0.504 + 0.018*SL 0.508 + 0.017*SL
CKN to QN tR 0.164 0.091 + 0.036*SL 0.090 + 0.037*SL 0.083 + 0.038*SL
tF 0.140 0.074 + 0.033*SL 0.075 + 0.032*SL 0.069 + 0.033*SL
tPLH 0.747 0.704 + 0.022*SL 0.717 + 0.018*SL 0.724 + 0.017*SL
tPHL 0.795 0.752 + 0.021*SL 0.764 + 0.019*SL 0.771 + 0.018*SL
SN to QN tF 0.155 0.084 + 0.036*SL 0.092 + 0.034*SL 0.097 + 0.033*SL
tPHL 0.293 0.245 + 0.024*SL 0.258 + 0.021*SL 0.271 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.120 0.082 + 0.019*SL 0.085 + 0.018*SL 0.078 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.083 + 0.017*SL 0.083 + 0.017*SL
tPLH 0.672 0.645 + 0.013*SL 0.658 + 0.010*SL 0.671 + 0.009*SL
tPHL 0.613 0.585 + 0.014*SL 0.598 + 0.011*SL 0.616 + 0.009*SL
SN to Q tR 0.125 0.087 + 0.019*SL 0.090 + 0.018*SL 0.081 + 0.019*SL
tPLH 0.579 0.552 + 0.013*SL 0.566 + 0.010*SL 0.580 + 0.009*SL
CKN to QN tR 0.125 0.084 + 0.020*SL 0.092 + 0.019*SL 0.090 + 0.019*SL
tF 0.106 0.071 + 0.018*SL 0.077 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.806 0.778 + 0.014*SL 0.791 + 0.011*SL 0.810 + 0.009*SL
tPHL 0.845 0.817 + 0.014*SL 0.830 + 0.011*SL 0.847 + 0.009*SL
SN to QN tF 0.118 0.079 + 0.020*SL 0.087 + 0.018*SL 0.097 + 0.017*SL
tPHL 0.288 0.257 + 0.015*SL 0.271 + 0.012*SL 0.291 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-366 Samsung ASIC
FD8/FD8D2
D Flip-Flop with Negative Edge Trigger, Reset, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FD8 FD8D2 FD8 FD8D2
D CKN RN SN D CKN RN SN
0.6 0.6 1.5 1.6 0.6 0.6 1.5 1.6 6.67 7.00
Parameter Symbol Value (ns)
FD8 FD8D2
Input Setup Time (D to CKN) tSU 0.323 0.324
Input Hold Time (D to CKN) tHD 0.208 0.206
Pulse Width Low (CKN) tPWL 0.452 0.492
Pulse Width High (CKN) tPWH 0.452 0.492
Pulse Width Low (RN) tPWL 0.582 0.585
Pulse Width Low (SN) tPWL 0.411 0.412
Recovery Time (RN to CKN) tRC 0.000 0.000
Removal Time (RN to CKN) tRM 0.807 0.810
Recovery Time (SN to CKN) tRC 0.026 0.026
Removal Time (SN to CKN) tRM 0.282 0.282
Recovery Time (SN to RN) tRC 0.140 0.141
Removal Time (SN to RN) tRM 0.140 0.138
D
CKN
Q
QN
RN
SN
D
CKN
CLBN
CLN
Q
CLN
CLBN
CLBN
CLN
CLBN CLBN
CLN
QN
CLN
SN
SN
RN RN
RN
RN
SN SN
Truth Table
D CKN RN SN Q
(n+1) QN
(n+1)
01101
11110
xx1010
xx0101
xx0000
x 1 1 Q (n) QN (n)
Samsung ASIC 3-367 STDM110
FD8/FD8D2
D Flip-Flop with Negative Edge Trigger, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.178 0.102 + 0.038*SL 0.104 + 0.037*SL 0.100 + 0.038*SL
tF 0.146 0.084 + 0.031*SL 0.084 + 0.031*SL 0.082 + 0.032*SL
tPLH 0.697 0.651 + 0.023*SL 0.665 + 0.019*SL 0.675 + 0.018*SL
tPHL 0.594 0.550 + 0.022*SL 0.563 + 0.019*SL 0.571 + 0.017*SL
RN to Q tR 0.169 0.094 + 0.038*SL 0.095 + 0.037*SL 0.090 + 0.038*SL
tF 0.142 0.078 + 0.032*SL 0.080 + 0.031*SL 0.076 + 0.032*SL
tPLH 0.259 0.215 + 0.022*SL 0.228 + 0.019*SL 0.237 + 0.018*SL
tPHL 0.267 0.224 + 0.021*SL 0.236 + 0.018*SL 0.243 + 0.017*SL
SN to Q tR 0.178 0.103 + 0.037*SL 0.105 + 0.037*SL 0.099 + 0.038*SL
tPLH 0.576 0.531 + 0.023*SL 0.545 + 0.019*SL 0.555 + 0.018*SL
CKN to QN tR 0.167 0.092 + 0.037*SL 0.090 + 0.038*SL 0.084 + 0.039*SL
tF 0.138 0.075 + 0.031*SL 0.078 + 0.031*SL 0.072 + 0.031*SL
tPLH 0.738 0.694 + 0.022*SL 0.707 + 0.019*SL 0.714 + 0.018*SL
tPHL 0.825 0.782 + 0.021*SL 0.795 + 0.018*SL 0.803 + 0.017*SL
RN to QN tR 0.194 0.109 + 0.042*SL 0.124 + 0.038*SL 0.128 + 0.038*SL
tPLH 0.463 0.409 + 0.027*SL 0.429 + 0.022*SL 0.451 + 0.019*SL
SN to QN tR 0.190 0.106 + 0.042*SL 0.120 + 0.039*SL 0.124 + 0.038*SL
tF 0.151 0.084 + 0.033*SL 0.089 + 0.032*SL 0.094 + 0.032*SL
tPLH 0.287 0.233 + 0.027*SL 0.253 + 0.022*SL 0.273 + 0.019*SL
tPHL 0.292 0.246 + 0.023*SL 0.259 + 0.020*SL 0.272 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-368 Samsung ASIC
FD8/FD8D2
D Flip-Flop with Negative Edge Trigger, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.138 0.097 + 0.020*SL 0.103 + 0.019*SL 0.104 + 0.019*SL
tF 0.114 0.078 + 0.018*SL 0.087 + 0.016*SL 0.086 + 0.016*SL
tPLH 0.706 0.676 + 0.015*SL 0.691 + 0.011*SL 0.711 + 0.009*SL
tPHL 0.598 0.570 + 0.014*SL 0.584 + 0.011*SL 0.602 + 0.009*SL
RN to Q tR 0.128 0.086 + 0.021*SL 0.093 + 0.019*SL 0.094 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.081 + 0.016*SL 0.084 + 0.016*SL
tPLH 0.261 0.233 + 0.014*SL 0.247 + 0.011*SL 0.266 + 0.009*SL
tPHL 0.269 0.241 + 0.014*SL 0.255 + 0.011*SL 0.272 + 0.009*SL
SN to Q tR 0.138 0.097 + 0.021*SL 0.104 + 0.019*SL 0.105 + 0.019*SL
tPLH 0.630 0.600 + 0.015*SL 0.615 + 0.011*SL 0.636 + 0.009*SL
CKN to QN tR 0.127 0.087 + 0.020*SL 0.093 + 0.019*SL 0.091 + 0.019*SL
tF 0.108 0.073 + 0.018*SL 0.082 + 0.015*SL 0.080 + 0.016*SL
tPLH 0.795 0.767 + 0.014*SL 0.781 + 0.011*SL 0.799 + 0.009*SL
tPHL 0.887 0.860 + 0.014*SL 0.873 + 0.010*SL 0.891 + 0.009*SL
RN to QN tR 0.147 0.101 + 0.023*SL 0.114 + 0.020*SL 0.129 + 0.019*SL
tPLH 0.514 0.481 + 0.016*SL 0.496 + 0.013*SL 0.526 + 0.010*SL
SN to QN tR 0.143 0.097 + 0.023*SL 0.109 + 0.020*SL 0.124 + 0.019*SL
tF 0.116 0.078 + 0.019*SL 0.088 + 0.016*SL 0.095 + 0.016*SL
tPLH 0.286 0.253 + 0.016*SL 0.268 + 0.013*SL 0.298 + 0.010*SL
tPHL 0.289 0.260 + 0.015*SL 0.274 + 0.011*SL 0.294 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-369 STDM110
FD8S/FD8SD2
D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FD8S FD8SD2 FD8S FD8SD2
D CKN RN SN TI TE D CKN RN SN TI TE
0.6 0.6 1.5 1.6 0.6 1.2 0.6 0.6 1.5 1.6 0.6 1.2 8.67 9.00
Q
QN
D
TI
TE
CKN RN
SN
CLBN
CLN CLN
CLBN
CLN
CLBN
CLBN
CLN
CKN CLN
CLBN
TE TEB
TE
SN RN
RN SN
Q
QN
D
TE
TI
TEB
SN SN
RN RN
Truth Table
D TI TE CKN RN SN Q
(n+1) QN
(n+1)
0x0 11 0 1
1x0 11 1 0
x01 11 0 1
x11 11 1 0
xxxx10 1 0
xxxx01 0 1
xxxx00 0 0
x x x 1 1 Q (n) QN (n)
STDM110 3-370 Samsung ASIC
FD8S/FD8SD2
D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
FD8S FD8SD2
Input Setup Time (D to CKN) tSU 0.645 0.632
Input Hold Time (D to CKN) tHD 0.135 0.134
Pulse Width Low (CKN) tPWL 0.484 0.520
Pulse Width High (CKN) tPWH 0.484 0.520
Pulse Width Low (RN) tPWL 0.596 0.599
Pulse Width Low (SN) tPWL 0.429 0.432
Recovery Time (RN to CKN) tRC 0.000 0.000
Removal Time(RN to CKN) tRM 0.820 0.822
Recovery Time (SN to CKN) tRC 0.021 0.022
Removal Time (SN to CKN) tRM 0.289 0.288
Input Setup Time (TI to CKN) tSU 0.615 0.618
Input Hold Time (TI to CKN) tHD 0.130 0.130
Input Setup Time (TE to CKN) tSU 0.657 0.640
Input Hold Time (TE to CKN) tHD 0.155 0.154
Recovery Time (SN to RN) tRC 0.142 0.144
Removal Time (SN to RN) tRM 0.138 0.135
Samsung ASIC 3-371 STDM110
FD8S/FD8SD2
D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD8S
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.178 0.104 + 0.037*SL 0.106 + 0.036*SL 0.102 + 0.037*SL
tF 0.147 0.084 + 0.032*SL 0.086 + 0.031*SL 0.083 + 0.031*SL
tPLH 0.747 0.701 + 0.023*SL 0.716 + 0.019*SL 0.726 + 0.018*SL
tPHL 0.630 0.586 + 0.022*SL 0.599 + 0.019*SL 0.608 + 0.017*SL
RN to Q tR 0.166 0.092 + 0.037*SL 0.093 + 0.037*SL 0.088 + 0.037*SL
tF 0.141 0.077 + 0.032*SL 0.079 + 0.031*SL 0.076 + 0.032*SL
tPLH 0.255 0.211 + 0.022*SL 0.224 + 0.019*SL 0.233 + 0.017*SL
tPHL 0.265 0.223 + 0.021*SL 0.234 + 0.018*SL 0.241 + 0.017*SL
SN to Q tR 0.178 0.106 + 0.036*SL 0.106 + 0.036*SL 0.099 + 0.037*SL
tPLH 0.602 0.557 + 0.023*SL 0.572 + 0.019*SL 0.582 + 0.018*SL
CKN to QN tR 0.163 0.090 + 0.036*SL 0.090 + 0.036*SL 0.085 + 0.037*SL
tF 0.140 0.078 + 0.031*SL 0.078 + 0.031*SL 0.074 + 0.031*SL
tPLH 0.774 0.731 + 0.022*SL 0.744 + 0.018*SL 0.752 + 0.017*SL
tPHL 0.882 0.839 + 0.021*SL 0.852 + 0.018*SL 0.860 + 0.017*SL
RN to QN tR 0.195 0.109 + 0.043*SL 0.129 + 0.038*SL 0.137 + 0.037*SL
tPLH 0.464 0.410 + 0.027*SL 0.429 + 0.022*SL 0.453 + 0.019*SL
SN to QN tR 0.192 0.107 + 0.042*SL 0.125 + 0.038*SL 0.133 + 0.037*SL
tF 0.153 0.084 + 0.035*SL 0.092 + 0.033*SL 0.098 + 0.032*SL
tPLH 0.290 0.236 + 0.027*SL 0.255 + 0.022*SL 0.278 + 0.019*SL
tPHL 0.299 0.252 + 0.023*SL 0.265 + 0.020*SL 0.277 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-372 Samsung ASIC
FD8S/FD8SD2
D Flip-Flop with Negative Edge Trigger, Reset, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FD8SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CKN to Q tR 0.137 0.095 + 0.021*SL 0.103 + 0.019*SL 0.105 + 0.019*SL
tF 0.115 0.079 + 0.018*SL 0.086 + 0.016*SL 0.086 + 0.016*SL
tPLH 0.755 0.725 + 0.015*SL 0.740 + 0.011*SL 0.761 + 0.009*SL
tPHL 0.634 0.605 + 0.015*SL 0.619 + 0.011*SL 0.638 + 0.009*SL
RN to Q tR 0.126 0.084 + 0.021*SL 0.092 + 0.019*SL 0.092 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.079 + 0.017*SL 0.079 + 0.017*SL
tPLH 0.255 0.227 + 0.014*SL 0.241 + 0.011*SL 0.260 + 0.009*SL
tPHL 0.262 0.234 + 0.014*SL 0.247 + 0.011*SL 0.263 + 0.009*SL
SN to Q tR 0.140 0.099 + 0.020*SL 0.107 + 0.018*SL 0.105 + 0.019*SL
tPLH 0.654 0.624 + 0.015*SL 0.639 + 0.011*SL 0.660 + 0.009*SL
CKN to QN tR 0.127 0.086 + 0.021*SL 0.094 + 0.019*SL 0.093 + 0.019*SL
tF 0.112 0.075 + 0.018*SL 0.083 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.829 0.801 + 0.014*SL 0.815 + 0.011*SL 0.834 + 0.009*SL
tPHL 0.943 0.915 + 0.014*SL 0.928 + 0.011*SL 0.946 + 0.009*SL
RN to QN tR 0.150 0.101 + 0.024*SL 0.115 + 0.021*SL 0.136 + 0.019*SL
tPLH 0.506 0.472 + 0.017*SL 0.487 + 0.013*SL 0.518 + 0.010*SL
SN to QN tR 0.147 0.100 + 0.024*SL 0.113 + 0.021*SL 0.133 + 0.019*SL
tF 0.121 0.082 + 0.019*SL 0.090 + 0.018*SL 0.099 + 0.017*SL
tPLH 0.290 0.257 + 0.017*SL 0.271 + 0.013*SL 0.302 + 0.010*SL
tPHL 0.298 0.267 + 0.015*SL 0.282 + 0.012*SL 0.302 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-373 STDM110
FDS2/FDS2D2
D Flip-Flop with Synchronous Clear, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS2 FDS2D2 FDS2 FDS2D2
D CRN CK D CRN CK
0.6 0.6 0.6 0.6 0.6 0.6 5.33 6.00
Parameter Symbol Value (ns)
FDS2 FDS2D2
Input Setup Time (D to CK) tSU 0.435 0.422
Input Hold Time (D to CK) tHD 0.086 0.097
Pulse Width Low (CK) tPWL 0.534 0.532
Pulse Width High (CK) tPWH 0.421 0.451
Input Setup Time (CRN to CK) tSU 0.425 0.425
Input Hold Time (CRN to CK) tHD 0.083 0.091
D
CRN
CK
Q
QN
D
CK
CL
CLB
Q
CL
CLB
CLB
CL
CLB
CL CL
CLB QN
CRN
Truth Table
D CRN CK Q (n+1) QN (n+1)
01 01
11 10
x0 01
x x Q (n) QN (n)
STDM110 3-374 Samsung ASIC
FDS2/FDS2D2
D Flip-Flop with Synchronous Clear, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS2
FDS2D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.163 0.089 + 0.037*SL 0.087 + 0.037*SL 0.080 + 0.038*SL
tF 0.146 0.081 + 0.032*SL 0.086 + 0.031*SL 0.082 + 0.032*SL
tPLH 0.554 0.513 + 0.020*SL 0.522 + 0.018*SL 0.527 + 0.018*SL
tPHL 0.585 0.542 + 0.022*SL 0.554 + 0.019*SL 0.564 + 0.017*SL
CK to QN tR 0.148 0.073 + 0.038*SL 0.070 + 0.039*SL 0.062 + 0.040*SL
tF 0.131 0.068 + 0.032*SL 0.067 + 0.032*SL 0.061 + 0.033*SL
tPLH 0.672 0.633 + 0.019*SL 0.640 + 0.018*SL 0.641 + 0.018*SL
tPHL 0.654 0.614 + 0.020*SL 0.623 + 0.018*SL 0.628 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.117 0.080 + 0.019*SL 0.082 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.073 + 0.018*SL 0.077 + 0.017*SL 0.080 + 0.016*SL
tPLH 0.559 0.533 + 0.013*SL 0.545 + 0.010*SL 0.557 + 0.009*SL
tPHL 0.588 0.559 + 0.014*SL 0.573 + 0.011*SL 0.590 + 0.009*SL
CK to QN tR 0.107 0.071 + 0.018*SL 0.069 + 0.018*SL 0.061 + 0.019*SL
tF 0.100 0.064 + 0.018*SL 0.070 + 0.016*SL 0.066 + 0.017*SL
tPLH 0.719 0.695 + 0.012*SL 0.705 + 0.010*SL 0.713 + 0.009*SL
tPHL 0.706 0.679 + 0.013*SL 0.691 + 0.010*SL 0.705 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-375 STDM110
FDS2CS/FDS2CSD2
D Flip-Flop with Synchronous Clear, Scan Clock, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS2CS FDS2CSD2 FDS2CS FDS2CSD2
D SI CK SCK CRN D SI CK SCK CRN
0.6 0.6 0.6 1.6 0.6 0.6 0.6 0.6 1.5 0.6 8.67 9.33
Parameter Symbol Value (ns)
FDS2CS FDS2CSD2
Input Setup Time (D to CK) tSU 0.421 0.435
Input Hold Time (D to CK) tHD 0.089 0.090
Input Setup Time (SI to SCK) tSU 0.479 0.480
Input Hold Time (SI to SCK) tHD 0.050 0.050
Pulse Width Low (CK) tPWL 0.534 0.535
Pulse Width High (CK) tPWH 0.444 0.474
Pulse Width Low (SCK) tPWL 0.415 0.416
Pulse Width High (SCK) tPWH 0.535 0.584
Input Setup Time (CRN to CK) tSU 0.424 0.424
Input Hold Time (CRN to CK) tHD 0.086 0.087
Q
QN
SI
CRN
CK
SCK
D
D
CL
CLB
Q
CLB
CL
CLB
CL CL
CLB QN
CRN SCK
SCKB
SCK
SCKB SCKB
SCK
SCKB
SCK
SI
CL
CLB
SCK SCK
SCKB
CK
Truth Table
SI SCK D CRN CK Q
(n+1) QN
(n+1)
x001 0 1
x011 1 0
0xx001
1xx010
x0x0 0 1
x 0 x x Q(n) QN(n)
x x x 0 Q(n) QN(n)
STDM110 3-376 Samsung ASIC
FDS2CS/FDS2CSD2
D Flip-Flop with Synchronous Clear, Scan Clock, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS2CS
FDS2CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.161 0.089 + 0.036*SL 0.085 + 0.037*SL 0.078 + 0.038*SL
tF 0.144 0.080 + 0.032*SL 0.081 + 0.032*SL 0.079 + 0.032*SL
tPLH 0.566 0.526 + 0.020*SL 0.535 + 0.018*SL 0.539 + 0.017*SL
tPHL 0.586 0.543 + 0.021*SL 0.554 + 0.019*SL 0.563 + 0.017*SL
SCK to Q tR 0.181 0.110 + 0.035*SL 0.108 + 0.036*SL 0.098 + 0.037*SL
tF 0.150 0.085 + 0.032*SL 0.091 + 0.031*SL 0.086 + 0.032*SL
tPLH 0.686 0.643 + 0.022*SL 0.656 + 0.019*SL 0.663 + 0.018*SL
tPHL 0.566 0.522 + 0.022*SL 0.534 + 0.019*SL 0.545 + 0.017*SL
CK to QN tR 0.177 0.099 + 0.039*SL 0.104 + 0.038*SL 0.099 + 0.038*SL
tF 0.155 0.088 + 0.033*SL 0.090 + 0.033*SL 0.092 + 0.033*SL
tPLH 0.726 0.680 + 0.023*SL 0.694 + 0.020*SL 0.706 + 0.018*SL
tPHL 0.727 0.681 + 0.023*SL 0.694 + 0.020*SL 0.704 + 0.018*SL
SCK to QN tR 0.158 0.085 + 0.037*SL 0.080 + 0.038*SL 0.072 + 0.039*SL
tF 0.144 0.080 + 0.032*SL 0.081 + 0.032*SL 0.075 + 0.032*SL
tPLH 0.679 0.639 + 0.020*SL 0.647 + 0.018*SL 0.650 + 0.018*SL
tPHL 0.817 0.775 + 0.021*SL 0.786 + 0.018*SL 0.793 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
fiii
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.118 0.080 + 0.019*SL 0.082 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.077 + 0.017*SL 0.077 + 0.017*SL
tPLH 0.564 0.538 + 0.013*SL 0.551 + 0.010*SL 0.563 + 0.009*SL
tPHL 0.585 0.557 + 0.014*SL 0.571 + 0.011*SL 0.587 + 0.009*SL
SCK to Q tR 0.139 0.101 + 0.019*SL 0.106 + 0.018*SL 0.097 + 0.019*SL
tF 0.114 0.078 + 0.018*SL 0.085 + 0.016*SL 0.085 + 0.016*SL
tPLH 0.699 0.670 + 0.014*SL 0.686 + 0.011*SL 0.703 + 0.009*SL
tPHL 0.575 0.546 + 0.014*SL 0.560 + 0.011*SL 0.578 + 0.009*SL
CK to QN tR 0.125 0.083 + 0.021*SL 0.091 + 0.019*SL 0.093 + 0.019*SL
tF 0.116 0.077 + 0.019*SL 0.085 + 0.017*SL 0.091 + 0.017*SL
tPLH 0.761 0.732 + 0.014*SL 0.745 + 0.011*SL 0.767 + 0.009*SL
tPHL 0.770 0.740 + 0.015*SL 0.754 + 0.012*SL 0.774 + 0.010*SL
SCK to QN tR 0.112 0.075 + 0.019*SL 0.077 + 0.018*SL 0.067 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.079 + 0.016*SL 0.078 + 0.016*SL
tPLH 0.729 0.703 + 0.013*SL 0.715 + 0.010*SL 0.726 + 0.009*SL
tPHL 0.881 0.853 + 0.014*SL 0.867 + 0.011*SL 0.884 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-377 STDM110
FDS2S/FDS2SD2
D Flip-Flop with Synchronous Clear, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS2S FDS2SD2 FDS2S FDS2SD2
D CRN CK TI TE D CRN CK TI TE
0.5 0.6 0.6 0.5 1.2 0.5 0.6 0.6 0.6 1.2 8.00 8.67
Parameter Symbol Value (ns)
FDS2S FDS2SD2
Input Setup Time (D to CK) tSU 0.620 0.614
Input Hold Time (D to CK) tHD 0.000 0.000
Input Setup Time (CRN to CK) tSU 0.622 0.611
Input Hold Time (CRN to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.603 0.591
Pulse Width High (CK) tPWH 0.418 0.440
Input Setup Time (TI to CK) tSU 0.660 0.657
Input Hold Time (TI to CK) tHD 0.000 0.000
Input Setup Time (TE to CK) tSU 0.532 0.539
Input Hold Time (TE to CK) tHD 0.000 0.000
Q
QN
D
TE
CK
CRN
TI
QN
Q
CL
CLB CL
CLB
CLB
CL
CRN
CL
CK
CLB
D
TI
TEB
TE
TE
TE
TEB
CL
CLB
Truth Table
D CRN TI TE CK Q
(n+1) QN
(n+1)
01x0 01
11x0 10
x0x0 01
xx01 01
xx11 10
x x x x Q (n) QN (n)
STDM110 3-378 Samsung ASIC
FDS2S/FDS2SD2
D Flip-Flop with Synchronous Clear, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS2S
FDS2SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.147 0.074 + 0.037*SL 0.070 + 0.038*SL 0.063 + 0.039*SL
tF 0.138 0.071 + 0.033*SL 0.069 + 0.034*SL 0.063 + 0.035*SL
tPLH 0.690 0.652 + 0.019*SL 0.658 + 0.017*SL 0.659 + 0.017*SL
tPHL 0.664 0.622 + 0.021*SL 0.631 + 0.019*SL 0.635 + 0.018*SL
CK to QN tR 0.159 0.087 + 0.036*SL 0.084 + 0.036*SL 0.076 + 0.038*SL
tF 0.142 0.078 + 0.032*SL 0.085 + 0.031*SL 0.078 + 0.031*SL
tPLH 0.554 0.514 + 0.020*SL 0.524 + 0.018*SL 0.529 + 0.017*SL
tPHL 0.603 0.560 + 0.022*SL 0.573 + 0.018*SL 0.583 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.106 0.070 + 0.018*SL 0.071 + 0.018*SL 0.059 + 0.019*SL
tF 0.100 0.065 + 0.017*SL 0.070 + 0.016*SL 0.066 + 0.017*SL
tPLH 0.725 0.700 + 0.012*SL 0.711 + 0.010*SL 0.719 + 0.009*SL
tPHL 0.700 0.674 + 0.013*SL 0.686 + 0.010*SL 0.699 + 0.009*SL
CK to QN tR 0.117 0.080 + 0.019*SL 0.082 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.071 + 0.018*SL 0.079 + 0.017*SL 0.080 + 0.016*SL
tPLH 0.552 0.525 + 0.013*SL 0.538 + 0.010*SL 0.550 + 0.009*SL
tPHL 0.596 0.567 + 0.014*SL 0.581 + 0.011*SL 0.598 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-379 STDM110
FDS3/FDS3D2
D Flip-Flop with Synchronous Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS3 FDS3D2 FDS3 FDS3D2
D CSN CK D CSN CK
0.6 0.5 0.6 0.6 0.5 0.6 6.00 6.67
Parameter Symbol Value (ns)
FDS3 FDS3D2
Input Setup Time (D to CK) tSU 0.510 0.512
Input Hold Time (D to CK) tHD 0.037 0.037
Input Setup Time (CSN to CK) tSU 0.412 0.414
Input Hold Time (CSN to CK) tHD 0.108 0.106
Pulse Width Low (CK) tPWL 0.522 0.525
Pulse Width High (CK) tPWH 0.428 0.453
D
CSN
CK
Q
QN
CL
CLB
Q
CLB
CL
CLB
CL
QN
D
CK CL
CLB
CSN
CL
CLB
Truth Table
D CSN CK Q (n+1) QN (n+1)
01 01
11 10
x0 10
x x Q (n) QN (n)
STDM110 3-380 Samsung ASIC
FDS3/FDS3D2
D Flip-Flop with Synchronous Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS3
FDS3D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.146 0.073 + 0.036*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.133 0.068 + 0.032*SL 0.067 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.679 0.641 + 0.019*SL 0.647 + 0.018*SL 0.649 + 0.017*SL
tPHL 0.668 0.627 + 0.020*SL 0.636 + 0.018*SL 0.640 + 0.018*SL
CK to QN tR 0.162 0.089 + 0.036*SL 0.085 + 0.037*SL 0.078 + 0.038*SL
tF 0.145 0.078 + 0.034*SL 0.082 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.566 0.524 + 0.021*SL 0.534 + 0.018*SL 0.539 + 0.018*SL
tPHL 0.598 0.553 + 0.022*SL 0.565 + 0.019*SL 0.575 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.107 0.071 + 0.018*SL 0.069 + 0.018*SL 0.061 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.071 + 0.016*SL 0.067 + 0.017*SL
tPLH 0.730 0.705 + 0.012*SL 0.716 + 0.010*SL 0.724 + 0.009*SL
tPHL 0.712 0.685 + 0.013*SL 0.698 + 0.010*SL 0.711 + 0.009*SL
CK to QN tR 0.117 0.080 + 0.018*SL 0.080 + 0.018*SL 0.074 + 0.019*SL
tF 0.108 0.071 + 0.018*SL 0.077 + 0.017*SL 0.079 + 0.016*SL
tPLH 0.564 0.538 + 0.013*SL 0.550 + 0.010*SL 0.562 + 0.009*SL
tPHL 0.598 0.570 + 0.014*SL 0.583 + 0.011*SL 0.600 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-381 STDM110
FDS3CS/FDS3CSD2
D Flip-Flop with Synchronous Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS3CS FDS3CSD2 FDS3CS FDS3CSD2
D SI CK SCK CSN D SI CK SCK CSN
0.6 0.6 0.6 1.6 0.5 0.6 0.6 0.6 1.7 0.5 9.67 10.33
Parameter Symbol Value (ns)
FDS3CS FDS3CSD2
Input Setup Time (D to CK) tSU 0.511 0.512
Input Hold Time (D to CK) tHD 0.037 0.037
Input Setup Time (SI to SCK) tSU 0.557 0.559
Input Hold Time (SI to SCK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.524 0.525
Pulse Width High (CK) tPWH 0.446 0.471
Pulse Width Low (SCK) tPWL 0.420 0.420
Pulse Width High (SCK) tPWH 0.526 0.566
Input Setup Time (CSN to CK) tSU 0.412 0.414
Input Hold Time (CSN to CK) tHD 0.108 0.107
Q
QN
SI
CSN
CK
SCK
D
CL
CLB
QN
CLB
CL
CLB
CL
Q
D
CK CL
CLB
CSN CL
CLB
SCK
SCKB
SCK
SCKB SCKB
SCK
SCKB
SCK
SI
SCK SCK
SCKB
Truth Table
SI SCK D CSN CK Q(n+1) QN(n+1)
x001 0 1
x011 1 0
0xx001
1xx010
x0x0 1 0
x 0 x x Q(n) QN(n)
x x x 0 Q(n) QN(n)
STDM110 3-382 Samsung ASIC
FDS3CS/FDS3CSD2
D Flip-Flop with Synchronous Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS3CS
FDS3CSD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.169 0.094 + 0.038*SL 0.099 + 0.037*SL 0.095 + 0.037*SL
tF 0.152 0.085 + 0.033*SL 0.086 + 0.033*SL 0.089 + 0.033*SL
tPLH 0.733 0.687 + 0.023*SL 0.702 + 0.019*SL 0.714 + 0.018*SL
tPHL 0.729 0.683 + 0.023*SL 0.696 + 0.020*SL 0.706 + 0.018*SL
SCK to Q tR 0.152 0.082 + 0.035*SL 0.074 + 0.037*SL 0.068 + 0.038*SL
tF 0.141 0.078 + 0.031*SL 0.077 + 0.032*SL 0.071 + 0.032*SL
tPLH 0.672 0.633 + 0.019*SL 0.641 + 0.018*SL 0.644 + 0.017*SL
tPHL 0.809 0.767 + 0.021*SL 0.778 + 0.018*SL 0.785 + 0.017*SL
CK to QN tR 0.158 0.086 + 0.036*SL 0.083 + 0.037*SL 0.075 + 0.038*SL
tF 0.141 0.077 + 0.032*SL 0.080 + 0.031*SL 0.074 + 0.032*SL
tPLH 0.569 0.528 + 0.020*SL 0.537 + 0.018*SL 0.541 + 0.018*SL
tPHL 0.596 0.553 + 0.021*SL 0.564 + 0.019*SL 0.573 + 0.017*SL
SCK to QN tR 0.177 0.106 + 0.036*SL 0.105 + 0.036*SL 0.094 + 0.037*SL
tF 0.147 0.082 + 0.032*SL 0.088 + 0.031*SL 0.083 + 0.032*SL
tPLH 0.678 0.635 + 0.022*SL 0.648 + 0.019*SL 0.656 + 0.018*SL
tPHL 0.561 0.518 + 0.022*SL 0.530 + 0.019*SL 0.541 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.123 0.081 + 0.021*SL 0.090 + 0.019*SL 0.091 + 0.019*SL
tF 0.114 0.075 + 0.019*SL 0.083 + 0.017*SL 0.088 + 0.017*SL
tPLH 0.770 0.741 + 0.014*SL 0.754 + 0.011*SL 0.775 + 0.009*SL
tPHL 0.767 0.737 + 0.015*SL 0.751 + 0.011*SL 0.770 + 0.010*SL
SCK to Q tR 0.112 0.075 + 0.018*SL 0.076 + 0.018*SL 0.067 + 0.019*SL
tF 0.106 0.069 + 0.018*SL 0.077 + 0.016*SL 0.075 + 0.016*SL
tPLH 0.719 0.693 + 0.013*SL 0.705 + 0.010*SL 0.716 + 0.009*SL
tPHL 0.861 0.833 + 0.014*SL 0.847 + 0.011*SL 0.863 + 0.009*SL
CK to QN tR 0.116 0.079 + 0.019*SL 0.081 + 0.018*SL 0.073 + 0.019*SL
tF 0.106 0.069 + 0.018*SL 0.077 + 0.016*SL 0.076 + 0.017*SL
tPLH 0.568 0.542 + 0.013*SL 0.554 + 0.010*SL 0.566 + 0.009*SL
tPHL 0.595 0.567 + 0.014*SL 0.580 + 0.011*SL 0.597 + 0.009*SL
SCK to QN tR 0.136 0.098 + 0.019*SL 0.103 + 0.018*SL 0.094 + 0.019*SL
tF 0.113 0.077 + 0.018*SL 0.083 + 0.016*SL 0.084 + 0.016*SL
tPLH 0.684 0.655 + 0.014*SL 0.670 + 0.011*SL 0.688 + 0.009*SL
tPHL 0.564 0.535 + 0.014*SL 0.549 + 0.011*SL 0.567 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-383 STDM110
FDS3S/FDS3SD2
Flip-Flop with Synchronous Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FDS3S FDS3SD2 FDS3S FDS3SD2
D CSN CK TI TE D CSN CK TI TE
0.6 0.5 0.5 0.6 1.2 0.6 0.5 0.6 0.6 1.2 8.00 8.67
Parameter Symbol Value (ns)
FDS3S FDS3SD2
Input Setup Time (D to CK) tSU 0.712 0.714
Input Hold Time (D to CK) tHD 0.000 0.000
Input Setup Time (CSN to CK) tSU 0.605 0.609
Input Hold Time (CSN to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.595 0.588
Pulse Width High (CK) tPWH 0.415 0.441
Input Setup Time (TI to CK) tSU 0.542 0.546
Input Hold Time (TI to CK) tHD 0.000 0.000
Input Setup Time (TE to CK) tSU 0.547 0.551
Input Hold Time (TE to CK) tHD 0.000 0.000
Q
QN
D
TE
CK
CSN
TI
CLB
CL CLB
CL
QN
Q
D
CSN
TI
CK CL
CLB
TE TE
TEB
CLB
CL
TEB
TE
CLB
CL
Truth Table
D CSN TI TE CK Q(n+1) QN(n+1)
01x0 0 1
11x0 1 0
xx01 0 1
xx11 1 0
x0x0 1 0
x x x x Q(n) QN(n+1)
STDM110 3-384 Samsung ASIC
FDS3S/FDS3SD2
Flip-Flop with Synchronous Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FDS3S
FDS3SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.162 0.088 + 0.037*SL 0.084 + 0.038*SL 0.076 + 0.039*SL
tF 0.146 0.079 + 0.033*SL 0.082 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.551 0.509 + 0.021*SL 0.519 + 0.018*SL 0.524 + 0.018*SL
tPHL 0.594 0.549 + 0.022*SL 0.562 + 0.019*SL 0.571 + 0.018*SL
CK to QN tR 0.146 0.074 + 0.036*SL 0.069 + 0.037*SL 0.063 + 0.038*SL
tF 0.135 0.070 + 0.032*SL 0.068 + 0.033*SL 0.062 + 0.034*SL
tPLH 0.675 0.638 + 0.019*SL 0.644 + 0.017*SL 0.646 + 0.017*SL
tPHL 0.653 0.612 + 0.020*SL 0.621 + 0.018*SL 0.625 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.117 0.080 + 0.019*SL 0.082 + 0.018*SL 0.073 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.077 + 0.017*SL 0.078 + 0.016*SL
tPLH 0.551 0.525 + 0.013*SL 0.537 + 0.010*SL 0.549 + 0.009*SL
tPHL 0.585 0.557 + 0.014*SL 0.570 + 0.011*SL 0.587 + 0.009*SL
CK to QN tR 0.107 0.070 + 0.018*SL 0.071 + 0.018*SL 0.060 + 0.019*SL
tF 0.099 0.064 + 0.018*SL 0.070 + 0.016*SL 0.066 + 0.017*SL
tPLH 0.717 0.692 + 0.012*SL 0.703 + 0.010*SL 0.712 + 0.009*SL
tPHL 0.698 0.671 + 0.013*SL 0.684 + 0.010*SL 0.697 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-385 STDM110
FJ1/FJ1D2
JK Flip-Flop with 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FJ1 FJ1D2 FJ1 FJ1D2
JKCKJKCK
0.4 0.6 0.6 0.4 0.6 0.6 6.67 7.33
Parameter Symbol Value (ns)
FJ1 FJ1D2
Input Setup Time (J to CK) tSU 0.437 0.435
Input Hold Time (J to CK) tHD 0.000 0.003
Input Setup Time (K to CK) tSU 0.437 0.435
Input Hold Time (K to CK) tHD 0.000 0.003
Pulse Width Low (CK) tPWL 0.530 0.523
Pulse Width High (CK) tPWH 0.432 0.460
J
CK
K
Q
QN
CL
CLB CLB
CL
CLB
CL
QN
Q
K
JCL
CLB
CK CL
CLB
Truth Table
J CK K Q (n+1) QN (n+1)
0 101
1 010
0 0 Q (n) QN (n)
1 1 QN (n) Q (n)
x x Q (n) QN (n)
STDM110 3-386 Samsung ASIC
FJ1/FJ1D2
JK Flip-Flop with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ1
FJ1D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.157 0.084 + 0.036*SL 0.079 + 0.038*SL 0.072 + 0.039*SL
tF 0.145 0.079 + 0.033*SL 0.080 + 0.033*SL 0.076 + 0.033*SL
tPLH 0.737 0.696 + 0.021*SL 0.706 + 0.018*SL 0.711 + 0.018*SL
tPHL 0.704 0.659 + 0.022*SL 0.672 + 0.019*SL 0.681 + 0.018*SL
CK to QN tR 0.156 0.084 + 0.036*SL 0.082 + 0.037*SL 0.074 + 0.038*SL
tF 0.145 0.079 + 0.033*SL 0.081 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.558 0.518 + 0.020*SL 0.527 + 0.018*SL 0.531 + 0.017*SL
tPHL 0.614 0.570 + 0.022*SL 0.581 + 0.019*SL 0.590 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.117 0.079 + 0.019*SL 0.082 + 0.018*SL 0.074 + 0.019*SL
tF 0.110 0.073 + 0.018*SL 0.081 + 0.016*SL 0.082 + 0.016*SL
tPLH 0.784 0.758 + 0.013*SL 0.771 + 0.010*SL 0.784 + 0.009*SL
tPHL 0.746 0.717 + 0.014*SL 0.731 + 0.011*SL 0.750 + 0.009*SL
CK to QN tR 0.117 0.080 + 0.018*SL 0.080 + 0.018*SL 0.073 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.080 + 0.016*SL 0.080 + 0.017*SL
tPLH 0.563 0.537 + 0.013*SL 0.549 + 0.010*SL 0.561 + 0.009*SL
tPHL 0.616 0.588 + 0.014*SL 0.601 + 0.011*SL 0.618 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-387 STDM110
FJ1S/FJ1SD2
JK Flip-Flop with Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FJ1S FJ1SD2 FJ1S FJ1SD2
J K CK TI TE J K CK TI TE
0.5 0.5 0.5 0.5 1.2 0.4 0.6 0.5 0.5 1.2 8.67 9.33
Q
QN
J
TI
TE
CK
K
CL
CLB CLB
CL
CLB
CL
TE
TEB
Q
QN
K
J
TI
CK CL
CLB
TE TE
TEB
CL
CLB
Truth Table
J CK K TI TE Q
(n+1) QN
(n+1)
01x001
10x010
0 0 x 0 Q (n) QN (n)
1 1 x 0 QN (n) Q (n)
x x x x Q (n) QN (n)
x x0101
x x1110
STDM110 3-388 Samsung ASIC
FJ1S/FJ1SD2
JK Flip-Flop with Scan, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ1S
FJ1SD2
Parameter Symbol Value (ns)
FJ1S FJ1SD2
Input Setup Time (J to CK) tSU 0.733 0.728
Input Hold Time (J to CK) tHD 0.000 0.000
Input Setup Time (K to CK) tSU 0.733 0.728
Input Hold Time (K to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.588 0.588
Pulse Width High (CK) tPWH 0.440 0.470
Input Setup Time (TI to CK) tSU 0.533 0.533
Input Hold Time (TI to CK) tHD 0.000 0.000
Input Setup Time (TE to CK) tSU 0.543 0.541
Input Hold Time (TE to CK) tHD 0.000 0.000
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.173 0.098 + 0.037*SL 0.095 + 0.038*SL 0.088 + 0.039*SL
tF 0.156 0.088 + 0.034*SL 0.096 + 0.032*SL 0.092 + 0.033*SL
tPLH 0.599 0.554 + 0.022*SL 0.567 + 0.019*SL 0.575 + 0.018*SL
tPHL 0.640 0.592 + 0.024*SL 0.608 + 0.020*SL 0.621 + 0.018*SL
CK to QN tR 0.147 0.074 + 0.036*SL 0.071 + 0.037*SL 0.064 + 0.038*SL
tF 0.131 0.069 + 0.031*SL 0.069 + 0.031*SL 0.063 + 0.032*SL
tPLH 0.726 0.688 + 0.019*SL 0.695 + 0.017*SL 0.697 + 0.017*SL
tPHL 0.699 0.660 + 0.020*SL 0.669 + 0.017*SL 0.674 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.127 0.087 + 0.020*SL 0.094 + 0.018*SL 0.088 + 0.019*SL
tF 0.117 0.080 + 0.018*SL 0.089 + 0.016*SL 0.097 + 0.015*SL
tPLH 0.597 0.569 + 0.014*SL 0.583 + 0.011*SL 0.600 + 0.009*SL
tPHL 0.635 0.606 + 0.015*SL 0.620 + 0.011*SL 0.643 + 0.009*SL
CK to QN tR 0.110 0.073 + 0.018*SL 0.075 + 0.018*SL 0.063 + 0.019*SL
tF 0.099 0.066 + 0.017*SL 0.071 + 0.015*SL 0.067 + 0.016*SL
tPLH 0.778 0.754 + 0.012*SL 0.764 + 0.010*SL 0.773 + 0.009*SL
tPHL 0.747 0.722 + 0.013*SL 0.733 + 0.010*SL 0.747 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-389 STDM110
FJ2/FJ2D2
JK Flip-Flop with Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FJ2 FJ2D2 FJ2 FJ2D2
J K CK RN J K CK RN
0.4 0.5 0.6 1.5 0.4 0.5 0.6 1.6 8.00 8.33
J
CK
K
Q
QN
RN
CL
CLB CLB
CL
Q
QN
J
K
CK CL
CLB
RN
RN RN
CL
CLB
CL
CLB
RN
Truth Table
JCKKRN
Q
(n+1) QN
(n+1)
01101
10110
0 0 1 Q (n) QN (n)
1 1 1 QN (n) Q (n)
x x 1 Q (n) QN (n)
xxx001
STDM110 3-390 Samsung ASIC
FJ2/FJ2D2
JK Flip-Flop with Reset, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ2
FJ2D2
Parameter Symbol Value (ns)
FJ2 FJ2D2
Input Setup Time (J to CK) tSU 0.482 0.481
Input Hold Time (J to CK) tHD 0.000 0.000
Input Setup Time (K to CK) tSU 0.482 0.481
Input Hold Time (K to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.580 0.581
Pulse Width High (CK) tPWH 0.435 0.463
Pulse Width Low (RN) tPWL 0.408 0.453
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.329 0.329
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.177 0.100 + 0.039*SL 0.103 + 0.038*SL 0.098 + 0.038*SL
tF 0.144 0.080 + 0.032*SL 0.085 + 0.031*SL 0.083 + 0.031*SL
tPLH 0.822 0.775 + 0.024*SL 0.791 + 0.020*SL 0.802 + 0.018*SL
tPHL 0.715 0.670 + 0.022*SL 0.685 + 0.019*SL 0.696 + 0.017*SL
RN to Q tF 0.163 0.095 + 0.034*SL 0.104 + 0.032*SL 0.109 + 0.031*SL
tPHL 0.329 0.279 + 0.025*SL 0.296 + 0.021*SL 0.313 + 0.018*SL
CK to QN tR 0.161 0.088 + 0.037*SL 0.084 + 0.038*SL 0.077 + 0.038*SL
tF 0.145 0.082 + 0.032*SL 0.083 + 0.031*SL 0.080 + 0.032*SL
tPLH 0.558 0.517 + 0.020*SL 0.526 + 0.018*SL 0.530 + 0.018*SL
tPHL 0.641 0.598 + 0.021*SL 0.610 + 0.018*SL 0.617 + 0.017*SL
RN to QN tR 0.166 0.095 + 0.035*SL 0.089 + 0.037*SL 0.080 + 0.038*SL
tPLH 0.574 0.533 + 0.021*SL 0.544 + 0.018*SL 0.548 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.135 0.092 + 0.021*SL 0.102 + 0.019*SL 0.104 + 0.019*SL
tF 0.114 0.076 + 0.019*SL 0.086 + 0.017*SL 0.090 + 0.016*SL
tPLH 0.871 0.841 + 0.015*SL 0.856 + 0.012*SL 0.879 + 0.009*SL
tPHL 0.759 0.729 + 0.015*SL 0.744 + 0.011*SL 0.765 + 0.009*SL
RN to Q tF 0.128 0.087 + 0.020*SL 0.099 + 0.017*SL 0.110 + 0.016*SL
tPHL 0.324 0.291 + 0.016*SL 0.307 + 0.012*SL 0.333 + 0.010*SL
CK to QN tR 0.117 0.080 + 0.018*SL 0.081 + 0.018*SL 0.072 + 0.019*SL
tF 0.112 0.076 + 0.018*SL 0.082 + 0.016*SL 0.081 + 0.017*SL
tPLH 0.558 0.531 + 0.013*SL 0.544 + 0.010*SL 0.556 + 0.009*SL
tPHL 0.647 0.618 + 0.014*SL 0.632 + 0.011*SL 0.650 + 0.009*SL
RN to QN tR 0.125 0.088 + 0.018*SL 0.090 + 0.018*SL 0.079 + 0.019*SL
tPLH 0.616 0.589 + 0.014*SL 0.602 + 0.010*SL 0.616 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-391 STDM110
FJ2S/FJ2SD2
JK Flip-Flop with Reset, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FJ2S FJ2SD2 FJ2S FJ2SD2
J K CK RN TI TE J K CK RN TI TE
0.5 0.5 0.6 1.6 0.6 1.2 0.5 0.5 0.6 1.5 0.6 1.2 9.67 10.33
Parameter Symbol Value (ns)
FJ2S FJ2SD2
Input Setup Time (J to CK) tSU 0.763 0.765
Input Hold Time (J to CK) tHD 0.000 0.000
Input Setup Time (K to CK) tSU 0.763 0.765
Input Hold Time (K to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.670 0.660
Pulse Width High (CK) tPWH 0.504 0.554
Pulse Width Low (RN) tPWL 0.372 0.420
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.594 0.588
Input Setup Time (TI to CK) tSU 0.568 0.558
Input Hold Time (TI to CK) tHD 0.029 0.043
Input Setup Time (TE to CK) tSU 0.570 0.560
Input Hold Time (TE to CK) tHD 0.029 0.043
Q
QN
J
TI
TE
CK
K
RN
CL
CLB CLB
CL
CLB
CL
TE
TEB
Q
QN
J
K
TI
CK CL
CLB
RN RN
RN
TEB
TE TE
CL
CLB
RN
Truth Table
J CK K TI TE RN Q
(n+1) QN
(n+1)
01x0101
10x0110
0 0 x 0 1 Q (n) QN (n)
1 1 x 0 1 QN (n) Q (n)
x x x x 1 Q (n) QN (n)
xxxxx0 0 1
xx01101
xx11110
STDM110 3-392 Samsung ASIC
FJ2S/FJ2SD2
JK Flip-Flop with Reset, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ2S
FJ2SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.193 0.114 + 0.039*SL 0.121 + 0.038*SL 0.118 + 0.038*SL
tF 0.153 0.088 + 0.033*SL 0.097 + 0.031*SL 0.093 + 0.031*SL
tPLH 0.693 0.642 + 0.025*SL 0.661 + 0.021*SL 0.675 + 0.019*SL
tPHL 0.676 0.629 + 0.023*SL 0.645 + 0.019*SL 0.659 + 0.018*SL
RN to Q tF 0.153 0.088 + 0.033*SL 0.097 + 0.031*SL 0.094 + 0.031*SL
tPHL 0.304 0.257 + 0.023*SL 0.274 + 0.019*SL 0.288 + 0.018*SL
CK to QN tR 0.151 0.079 + 0.036*SL 0.073 + 0.037*SL 0.066 + 0.038*SL
tF 0.137 0.075 + 0.031*SL 0.074 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.769 0.731 + 0.019*SL 0.738 + 0.017*SL 0.740 + 0.017*SL
tPHL 0.806 0.766 + 0.020*SL 0.776 + 0.018*SL 0.782 + 0.017*SL
RN to QN tR 0.171 0.095 + 0.038*SL 0.100 + 0.037*SL 0.098 + 0.037*SL
tPLH 0.455 0.409 + 0.023*SL 0.422 + 0.019*SL 0.435 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.149 0.105 + 0.022*SL 0.116 + 0.019*SL 0.122 + 0.019*SL
tF 0.122 0.083 + 0.020*SL 0.094 + 0.017*SL 0.101 + 0.016*SL
tPLH 0.707 0.675 + 0.016*SL 0.691 + 0.012*SL 0.718 + 0.010*SL
tPHL 0.688 0.657 + 0.016*SL 0.672 + 0.012*SL 0.696 + 0.010*SL
RN to Q tF 0.122 0.083 + 0.020*SL 0.095 + 0.017*SL 0.100 + 0.016*SL
tPHL 0.301 0.270 + 0.016*SL 0.286 + 0.012*SL 0.311 + 0.010*SL
CK to QN tR 0.112 0.076 + 0.018*SL 0.076 + 0.018*SL 0.065 + 0.019*SL
tF 0.110 0.076 + 0.017*SL 0.079 + 0.016*SL 0.076 + 0.016*SL
tPLH 0.830 0.805 + 0.012*SL 0.816 + 0.010*SL 0.825 + 0.009*SL
tPHL 0.884 0.857 + 0.014*SL 0.870 + 0.010*SL 0.885 + 0.009*SL
RN to QN tR 0.126 0.084 + 0.021*SL 0.091 + 0.019*SL 0.094 + 0.019*SL
tPLH 0.497 0.468 + 0.014*SL 0.481 + 0.011*SL 0.500 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
fjdTiiRi
Samsung ASIC 3-393 STDM110
FJ4/FJ4D2
JK Flip-Flop with Reset, Set, 1X/2X Drive
Logic Symbol5
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FJ4 FJ4D2 FJ4 FJ4D2
J K CK RN SN J K CK RN SN
0.4 0.6 0.6 1.7 1.5 0.4 0.6 0.6 1.7 1.5 8.33 8.67
J
CK
K
Q
QN
RN
SN
J
CL
CLB
K
Q
QN
CL
CLB
CLB
CL
CLB
CL
RN
SN
CL
CK
CLB
Truth Table
J CK K RN SN Q
(n+1) QN
(n+1)
0 11101
1 01110
0 0 1 1 Q (n) QN (n)
1 1 1 1 QN (n) Q (n)
x x 1 1 Q (n) QN (n)
xxx0101
xxx1010
xxx0000
STDM110 3-394 Samsung ASIC
FJ4/FJ4D2
JK Flip-Flop with Reset, Set, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ4
Parameter Symbol Value (ns)
FJ4 FJ4D2
Input Setup Time (J to CK) tSU 0.547 0.538
Input Hold Time (J to CK) tHD 0.000 0.000
Input Setup Time (K to CK) tSU 0.547 0.538
Input Hold Time (K to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.623 0.624
Pulse Width High (CK) tPWH 0.471 0.514
Pulse Width Low (RN) tPWL 0.433 0.486
Pulse Width Low (SN) tPWL 0.409 0.460
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.370 0.370
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.695 0.697
Recovery Time (SN to RN) tRC 0.151 0.150
Removal Time (SN to RN) tRM 0.129 0.131
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.180 0.104 + 0.038*SL 0.108 + 0.037*SL 0.104 + 0.038*SL
tF 0.155 0.088 + 0.034*SL 0.093 + 0.032*SL 0.089 + 0.033*SL
tPLH 0.843 0.794 + 0.024*SL 0.812 + 0.020*SL 0.825 + 0.018*SL
tPHL 0.803 0.755 + 0.024*SL 0.772 + 0.020*SL 0.784 + 0.018*SL
RN to Q tR 0.203 0.118 + 0.042*SL 0.136 + 0.038*SL 0.141 + 0.037*SL
tF 0.171 0.099 + 0.036*SL 0.109 + 0.033*SL 0.113 + 0.033*SL
tPLH 0.341 0.285 + 0.028*SL 0.307 + 0.023*SL 0.331 + 0.019*SL
tPHL 0.343 0.291 + 0.026*SL 0.309 + 0.022*SL 0.326 + 0.019*SL
SN to Q tR 0.204 0.119 + 0.043*SL 0.138 + 0.038*SL 0.143 + 0.037*SL
tPLH 0.518 0.462 + 0.028*SL 0.484 + 0.023*SL 0.508 + 0.020*SL
CK to QN tR 0.175 0.099 + 0.038*SL 0.101 + 0.037*SL 0.097 + 0.038*SL
tF 0.145 0.082 + 0.031*SL 0.084 + 0.031*SL 0.080 + 0.032*SL
tPLH 0.627 0.582 + 0.023*SL 0.596 + 0.019*SL 0.605 + 0.018*SL
tPHL 0.647 0.604 + 0.022*SL 0.616 + 0.018*SL 0.624 + 0.017*SL
RN to QN tR 0.180 0.107 + 0.037*SL 0.105 + 0.037*SL 0.100 + 0.038*SL
tPLH 0.628 0.582 + 0.023*SL 0.597 + 0.019*SL 0.607 + 0.018*SL
SN to QN tR 0.169 0.094 + 0.037*SL 0.095 + 0.037*SL 0.089 + 0.038*SL
tF 0.142 0.081 + 0.031*SL 0.079 + 0.031*SL 0.075 + 0.032*SL
tPLH 0.257 0.213 + 0.022*SL 0.226 + 0.019*SL 0.234 + 0.018*SL
tPHL 0.270 0.228 + 0.021*SL 0.240 + 0.018*SL 0.247 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-395 STDM110
FJ4/FJ4D2
JK Flip-Flop with Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.138 0.095 + 0.022*SL 0.106 + 0.019*SL 0.109 + 0.019*SL
tF 0.119 0.081 + 0.019*SL 0.090 + 0.017*SL 0.096 + 0.016*SL
tPLH 0.902 0.870 + 0.016*SL 0.886 + 0.012*SL 0.911 + 0.010*SL
tPHL 0.861 0.830 + 0.015*SL 0.846 + 0.012*SL 0.869 + 0.010*SL
RN to Q tR 0.156 0.108 + 0.024*SL 0.122 + 0.020*SL 0.141 + 0.019*SL
tF 0.130 0.089 + 0.021*SL 0.101 + 0.018*SL 0.113 + 0.017*SL
tPLH 0.335 0.300 + 0.018*SL 0.317 + 0.013*SL 0.351 + 0.010*SL
tPHL 0.333 0.300 + 0.017*SL 0.316 + 0.013*SL 0.342 + 0.010*SL
SN to Q tR 0.157 0.109 + 0.024*SL 0.124 + 0.020*SL 0.143 + 0.019*SL
tPLH 0.562 0.526 + 0.018*SL 0.544 + 0.013*SL 0.577 + 0.010*SL
CK to QN tR 0.135 0.094 + 0.021*SL 0.101 + 0.019*SL 0.103 + 0.018*SL
tF 0.117 0.080 + 0.018*SL 0.089 + 0.016*SL 0.087 + 0.016*SL
tPLH 0.636 0.607 + 0.015*SL 0.621 + 0.011*SL 0.642 + 0.009*SL
tPHL 0.661 0.632 + 0.015*SL 0.646 + 0.011*SL 0.664 + 0.009*SL
RN to QN tR 0.140 0.100 + 0.020*SL 0.107 + 0.018*SL 0.107 + 0.018*SL
tPLH 0.682 0.653 + 0.015*SL 0.668 + 0.011*SL 0.689 + 0.009*SL
SN to QN tR 0.127 0.086 + 0.020*SL 0.094 + 0.019*SL 0.094 + 0.018*SL
tF 0.112 0.076 + 0.018*SL 0.081 + 0.017*SL 0.082 + 0.017*SL
tPLH 0.261 0.233 + 0.014*SL 0.246 + 0.011*SL 0.266 + 0.009*SL
tPHL 0.271 0.242 + 0.014*SL 0.256 + 0.011*SL 0.274 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-396 Samsung ASIC
FJ4S/FJ4SD2
JK Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
FJ4S FJ4SD2 FJ4S FJ4SD2
J K CK RN SN TI TE J K CK RN SN TI TE
0.5 0.5 0.6 1.6 1.6 0.6 1.2 0.5 0.5 0.6 1.6 1.6 0.6 1.2 10.67 11.00
Q
QN
J
TI
TE
CK
K
RN
SN
CL
CLB CLB
CL
CLB
CL
Q
QN
J
K
TI
CL
CLB
CK CL
CLB
RN RN
RN
SN
RN SN
SN SN TE
TE TEB
TE
TEB
Truth Table
J CK K TI TE RN SN Q
(n+1) QN
(n+1)
01x01101
10x01110
0 0 x 0 1 1 Q (n) QN (n)
1 1 x 0 1 1 QN (n) Q (n)
x x x x 1 1 Q (n) QN (n)
xxxxx01 0 1
xxxxx10 1 0
xxxxx00 0 0
x x0111 0 1
x x1111 1 0
Samsung ASIC 3-397 STDM110
FJ4S/FJ4SD2
JK Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ4S
Parameter Symbol Value (ns)
FJ4S FJ4SD2
Input Setup Time (J to CK) tSU 0.774 0.766
Input Hold Time (J to CK) tHD 0.000 0.000
Input Setup Time (K to CK) tSU 0.774 0.766
Input Hold Time (K to CK) tHD 0.000 0.000
Pulse Width Low (CK) tPWL 0.711 0.712
Pulse Width High (CK) tPWH 0.522 0.559
Pulse Width Low (RN) tPWL 0.419 0.474
Pulse Width Low (SN) tPWL 0.445 0.493
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.638 0.639
Recovery Time (SN to CK) tRC 0.000 0.000
Removal Time (SN to CK) tRM 0.638 0.639
Input Setup Time (TI to CK) tSU 0.612 0.612
Input Hold Time (TI to CK) tHD 0.032 0.032
Input Setup Time (TE to CK) tSU 0.614 0.614
Input Hold Time (TE to CK) tHD 0.000 0.000
Recovery Time (SN to RN) tRC 0.151 0.151
Removal Time (SN to RN) tRM 0.129 0.128
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.192 0.116 + 0.038*SL 0.122 + 0.036*SL 0.122 + 0.037*SL
tF 0.160 0.094 + 0.033*SL 0.102 + 0.031*SL 0.101 + 0.031*SL
tPLH 0.711 0.661 + 0.025*SL 0.680 + 0.020*SL 0.695 + 0.018*SL
tPHL 0.708 0.661 + 0.024*SL 0.677 + 0.020*SL 0.691 + 0.018*SL
RN to Q tR 0.178 0.103 + 0.037*SL 0.107 + 0.036*SL 0.104 + 0.037*SL
tF 0.155 0.088 + 0.033*SL 0.098 + 0.031*SL 0.095 + 0.031*SL
tPLH 0.298 0.250 + 0.024*SL 0.267 + 0.019*SL 0.280 + 0.018*SL
tPHL 0.308 0.261 + 0.023*SL 0.278 + 0.019*SL 0.290 + 0.018*SL
SN to Q tR 0.189 0.115 + 0.037*SL 0.120 + 0.036*SL 0.114 + 0.037*SL
tPLH 0.654 0.606 + 0.024*SL 0.624 + 0.020*SL 0.638 + 0.018*SL
CK to QN tR 0.168 0.095 + 0.037*SL 0.094 + 0.037*SL 0.088 + 0.038*SL
tF 0.143 0.081 + 0.031*SL 0.083 + 0.031*SL 0.077 + 0.031*SL
tPLH 0.861 0.818 + 0.022*SL 0.830 + 0.019*SL 0.838 + 0.018*SL
tPHL 0.851 0.809 + 0.021*SL 0.821 + 0.018*SL 0.829 + 0.017*SL
RN to QN tR 0.200 0.115 + 0.042*SL 0.133 + 0.038*SL 0.139 + 0.037*SL
tPLH 0.519 0.465 + 0.027*SL 0.484 + 0.022*SL 0.508 + 0.019*SL
SN to QN tR 0.196 0.111 + 0.042*SL 0.128 + 0.038*SL 0.135 + 0.037*SL
tF 0.159 0.091 + 0.034*SL 0.095 + 0.033*SL 0.101 + 0.032*SL
tPLH 0.291 0.237 + 0.027*SL 0.256 + 0.022*SL 0.278 + 0.019*SL
tPHL 0.304 0.257 + 0.023*SL 0.270 + 0.020*SL 0.281 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-398 Samsung ASIC
FJ4S/FJ4SD2
JK Flip-Flop with Reset, Set, Scan, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FJ4SD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.149 0.105 + 0.022*SL 0.116 + 0.019*SL 0.121 + 0.019*SL
tF 0.125 0.086 + 0.020*SL 0.098 + 0.017*SL 0.102 + 0.016*SL
tPLH 0.712 0.679 + 0.016*SL 0.696 + 0.012*SL 0.722 + 0.010*SL
tPHL 0.708 0.677 + 0.016*SL 0.692 + 0.012*SL 0.717 + 0.010*SL
RN to Q tR 0.137 0.094 + 0.021*SL 0.104 + 0.019*SL 0.107 + 0.019*SL
tF 0.122 0.084 + 0.019*SL 0.094 + 0.017*SL 0.099 + 0.016*SL
tPLH 0.296 0.265 + 0.016*SL 0.281 + 0.012*SL 0.305 + 0.010*SL
tPHL 0.304 0.272 + 0.016*SL 0.288 + 0.012*SL 0.312 + 0.010*SL
SN to Q tR 0.148 0.106 + 0.021*SL 0.116 + 0.019*SL 0.119 + 0.018*SL
tPLH 0.698 0.666 + 0.016*SL 0.683 + 0.012*SL 0.709 + 0.010*SL
CK to QN tR 0.130 0.089 + 0.020*SL 0.096 + 0.019*SL 0.093 + 0.019*SL
tF 0.113 0.075 + 0.019*SL 0.085 + 0.016*SL 0.084 + 0.016*SL
tPLH 0.912 0.884 + 0.014*SL 0.897 + 0.011*SL 0.916 + 0.009*SL
tPHL 0.909 0.881 + 0.014*SL 0.894 + 0.011*SL 0.912 + 0.009*SL
RN to QN tR 0.153 0.105 + 0.024*SL 0.118 + 0.021*SL 0.137 + 0.019*SL
tPLH 0.560 0.527 + 0.017*SL 0.542 + 0.013*SL 0.573 + 0.010*SL
SN to QN tR 0.148 0.100 + 0.024*SL 0.113 + 0.021*SL 0.131 + 0.019*SL
tF 0.124 0.084 + 0.020*SL 0.093 + 0.018*SL 0.100 + 0.017*SL
tPLH 0.287 0.254 + 0.017*SL 0.268 + 0.013*SL 0.299 + 0.010*SL
tPHL 0.301 0.270 + 0.015*SL 0.284 + 0.012*SL 0.304 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-399 STDM110
FT2/FT2D2
Toggle Flip-Flop with Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
FT2 FT2D2 FT2 FT2D2
CK RN CK RN
0.6 0.5 0.6 1.5 6.00 6.67
Parameter Symbol Value (ns)
FT2 FT2D2
Pulse Width Low (CK) tPWL 0.370 0.369
Pulse Width High (CK) tPWH 0.458 0.489
Pulse Width Low (RN) tPWL 0.447 0.495
Recovery Time (RN to CK) tRC 0.000 0.000
Removal Time (RN to CK) tRM 0.303 0.304
CK
Q
QN
RN
CLB
CL
CLB
CL
Q
QN
CK CL
CLB
RN RN
RN
RN
CLB
CL
CLB
CL
Truth Table
CK RN Q (n+1) QN (n+1)
1 QN (n) Q (n)
1 Q (n) QN (n)
x001
STDM110 3-400 Samsung ASIC
FT2/FT2D2
Toggle Flip-Flop with Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FT2
FT2D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.173 0.099 + 0.037*SL 0.101 + 0.036*SL 0.097 + 0.037*SL
tF 0.150 0.083 + 0.034*SL 0.087 + 0.033*SL 0.083 + 0.033*SL
tPLH 0.794 0.749 + 0.023*SL 0.764 + 0.019*SL 0.775 + 0.018*SL
tPHL 0.738 0.692 + 0.023*SL 0.706 + 0.019*SL 0.716 + 0.018*SL
RN to Q tF 0.151 0.083 + 0.034*SL 0.087 + 0.033*SL 0.087 + 0.033*SL
tPHL 0.289 0.243 + 0.023*SL 0.256 + 0.020*SL 0.265 + 0.018*SL
CK to QN tR 0.159 0.089 + 0.035*SL 0.084 + 0.037*SL 0.076 + 0.038*SL
tF 0.148 0.081 + 0.033*SL 0.083 + 0.033*SL 0.079 + 0.033*SL
tPLH 0.575 0.535 + 0.020*SL 0.545 + 0.018*SL 0.548 + 0.017*SL
tPHL 0.622 0.578 + 0.022*SL 0.590 + 0.019*SL 0.597 + 0.018*SL
RN to QN tR 0.159 0.089 + 0.035*SL 0.082 + 0.036*SL 0.074 + 0.037*SL
tPLH 0.551 0.511 + 0.020*SL 0.521 + 0.018*SL 0.525 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
CK to Q tR 0.133 0.090 + 0.021*SL 0.099 + 0.019*SL 0.102 + 0.019*SL
tF 0.114 0.075 + 0.019*SL 0.086 + 0.017*SL 0.088 + 0.016*SL
tPLH 0.845 0.815 + 0.015*SL 0.830 + 0.011*SL 0.852 + 0.009*SL
tPHL 0.779 0.749 + 0.015*SL 0.763 + 0.011*SL 0.784 + 0.009*SL
RN to Q tF 0.114 0.076 + 0.019*SL 0.085 + 0.017*SL 0.090 + 0.016*SL
tPHL 0.283 0.254 + 0.015*SL 0.268 + 0.011*SL 0.288 + 0.010*SL
CK to QN tR 0.120 0.083 + 0.019*SL 0.084 + 0.018*SL 0.075 + 0.019*SL
tF 0.113 0.078 + 0.018*SL 0.082 + 0.016*SL 0.080 + 0.017*SL
tPLH 0.581 0.554 + 0.013*SL 0.567 + 0.010*SL 0.579 + 0.009*SL
tPHL 0.625 0.597 + 0.014*SL 0.611 + 0.011*SL 0.628 + 0.009*SL
RN to QN tR 0.118 0.082 + 0.018*SL 0.082 + 0.018*SL 0.073 + 0.019*SL
tPLH 0.559 0.533 + 0.013*SL 0.545 + 0.010*SL 0.557 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-400 Samsung ASIC
LATCHES
Cell List
Cell Name Function Description
LD1 D Latch with Active High
LD1D2 D Latch with Active High, 2X Drive
LD1A D Latch with Active High, Tri-State Output
LD1D2A D Latch with Active High, Tri-State Output, 2x Drive
LD1Q D Latch with Active High, Q Output Only
LD1QD2 D Latch with Active High, Q Output Only, 2X Drive
LD2 D Latch with Active High, Reset
LD2D2 D Latch with Active High, Reset, 2X Drive
LD2Q D Latch with Active High, Reset, Q Output Only
LD2QD2 D Latch with Active High, Reset, Q Output Only, 2X Drive
LD3 D Latch with Active High, Set
LD3D2 D Latch with Active High, Set, 2X Drive
LD4 D Latch with Active High, Reset, Set
LD4D2 D Latch with Active High, Reset, Set, 2X Drive
LD5 D Latch with Active Low
LD5D2 D Latch with Active Low, 2X Drive
LD5Q D Latch with Active Low, Q Output Only
LD5QD2 D Latch with Active Low, Q Output Only, 2X Drive
LD6 D Latch with Active Low, Reset
LD6D2 D Latch with Active Low, Reset, 2X Drive
LD6Q D Latch with Active Low, Reset, Q Output Only
LD6QD2 D Latch with Active Low, Reset, Q Output Only, 2X Drive
LD7 D Latch with Active Low, Set
LD7D2 D Latch with Active Low, Set, 2X Drive
LD8 D Latch with Active Low, Reset, Set
LD8D2 D Latch with Active Low, Reset, Set, 2X Drive
LS1 SR Latch with Separate Inputs
LS1D2 SR Latch with Separate Inputs, 2X Drive
Samsung ASIC 3-401 STDM110
NOTE
STDM110 3-402 Samsung ASIC
LD1/LD1D2
D Latch with Active High, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD1 LD1D2 LD1 LD1D2
DGDG
0.6 0.5 0.6 0.6 4.00 4.33
Parameter Symbol Value (ns)
LD1 LD1D2
Input Setup Time (D to G) tSU 0.329 0.356
Input Hold Time (D to G) tHD 0.062 0.026
Pulse Width High (G) tPWH 0.393 0.431
D
G
Q
QN
GL
G
GB
D
GB
GL GL
GB
QN
Q
Truth Table
D G Q (n+1) QN (n+1)
0101
1110
x 0 Q (n) QN (n)
Samsung ASIC 3-403 STDM110
LD1/LD1D2
D Latch with Active High, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD1
LD1D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.144 0.070 + 0.037*SL 0.065 + 0.038*SL 0.059 + 0.039*SL
tF 0.133 0.068 + 0.032*SL 0.064 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.504 0.465 + 0.019*SL 0.472 + 0.018*SL 0.474 + 0.017*SL
tPHL 0.541 0.499 + 0.021*SL 0.509 + 0.018*SL 0.513 + 0.018*SL
G to Q tR 0.145 0.072 + 0.037*SL 0.067 + 0.038*SL 0.059 + 0.039*SL
tF 0.133 0.067 + 0.033*SL 0.066 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.599 0.560 + 0.019*SL 0.567 + 0.018*SL 0.568 + 0.017*SL
tPHL 0.610 0.568 + 0.021*SL 0.578 + 0.018*SL 0.582 + 0.018*SL
D to QN tR 0.158 0.084 + 0.037*SL 0.081 + 0.038*SL 0.074 + 0.039*SL
tF 0.144 0.076 + 0.034*SL 0.081 + 0.033*SL 0.075 + 0.034*SL
tPLH 0.438 0.397 + 0.021*SL 0.406 + 0.018*SL 0.411 + 0.018*SL
tPHL 0.424 0.380 + 0.022*SL 0.391 + 0.019*SL 0.401 + 0.018*SL
G to QN tR 0.158 0.084 + 0.037*SL 0.079 + 0.038*SL 0.073 + 0.039*SL
tF 0.144 0.076 + 0.034*SL 0.079 + 0.033*SL 0.075 + 0.034*SL
tPLH 0.507 0.466 + 0.020*SL 0.475 + 0.018*SL 0.480 + 0.018*SL
tPHL 0.519 0.474 + 0.022*SL 0.486 + 0.019*SL 0.495 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.107 0.071 + 0.018*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.099 0.064 + 0.018*SL 0.069 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.552 0.528 + 0.012*SL 0.538 + 0.010*SL 0.546 + 0.009*SL
tPHL 0.585 0.559 + 0.013*SL 0.571 + 0.010*SL 0.584 + 0.009*SL
G to Q tR 0.107 0.071 + 0.018*SL 0.070 + 0.018*SL 0.061 + 0.019*SL
tF 0.099 0.065 + 0.017*SL 0.069 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.652 0.628 + 0.012*SL 0.638 + 0.010*SL 0.647 + 0.009*SL
tPHL 0.666 0.640 + 0.013*SL 0.652 + 0.010*SL 0.665 + 0.009*SL
D to QN tR 0.115 0.078 + 0.018*SL 0.078 + 0.018*SL 0.072 + 0.019*SL
tF 0.106 0.071 + 0.018*SL 0.075 + 0.017*SL 0.077 + 0.017*SL
tPLH 0.442 0.416 + 0.013*SL 0.428 + 0.010*SL 0.440 + 0.009*SL
tPHL 0.424 0.396 + 0.014*SL 0.409 + 0.011*SL 0.425 + 0.009*SL
G to QN tR 0.115 0.078 + 0.018*SL 0.078 + 0.018*SL 0.071 + 0.019*SL
tF 0.106 0.070 + 0.018*SL 0.076 + 0.017*SL 0.077 + 0.016*SL
tPLH 0.523 0.497 + 0.013*SL 0.509 + 0.010*SL 0.520 + 0.009*SL
tPHL 0.524 0.496 + 0.014*SL 0.509 + 0.011*SL 0.525 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-404 Samsung ASIC
LD1A/LD1D2A
D Latch with Active High, Tri-State Output, 1x/2x Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Output Load (SL) Gate Count
LD1A LD1D2A LD1A LD1D2A LD1A LD1D2A
DGEDGE Q Q 4.33 5.000.6 0.5 1.3 0.6 0.6 1.7 1.0 1.3
Parameter Symbol Value (ns)
LD1A LD1D2A
Input Setup Time (D to G) tSU 0.332 0.324
Input Hold Time (D to G) tHD 0.058 0.065
Pulse Width High (G) tPWH 0.388 0.398
D
G
Q
E
D
GB
GL
E
Q
GL
GB
GL
G
GB
Truth Table
D G E Q (n+1)
x x 0 Hi-Z
0110
1111
x 0 1 Q (n)
Samsung ASIC 3-405 STDM110
LD1A/LD1D2A
D Latch with Active High, Tri-State Output 1x/2x Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD1A
LD1D2A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.165 0.091 + 0.037*SL 0.089 + 0.038*SL 0.083 + 0.038*SL
tF 0.163 0.073 + 0.045*SL 0.069 + 0.046*SL 0.067 + 0.046*SL
tPLH 0.523 0.485 + 0.019*SL 0.491 + 0.018*SL 0.495 + 0.017*SL
tPHL 0.539 0.491 + 0.024*SL 0.496 + 0.023*SL 0.498 + 0.023*SL
G to Q tR 0.164 0.090 + 0.037*SL 0.088 + 0.038*SL 0.084 + 0.038*SL
tF 0.163 0.073 + 0.045*SL 0.069 + 0.046*SL 0.067 + 0.046*SL
tPLH 0.612 0.573 + 0.019*SL 0.580 + 0.018*SL 0.583 + 0.017*SL
tPHL 0.601 0.553 + 0.024*SL 0.557 + 0.023*SL 0.559 + 0.023*SL
E to Q tR 0.204 0.123 + 0.040*SL 0.112 + 0.043*SL 0.104 + 0.044*SL
tF 0.234 0.140 + 0.047*SL 0.124 + 0.051*SL 0.107 + 0.053*SL
tPLH 0.201 0.160 + 0.020*SL 0.169 + 0.018*SL 0.172 + 0.018*SL
tPHL 0.124 0.070 + 0.027*SL 0.087 + 0.023*SL 0.085 + 0.023*SL
tPLZ 0.137 0.137 + 0.000*SL 0.137 + 0.000*SL 0.137 + 0.000*SL
tPHZ 0.208 0.208 + 0.000*SL 0.208 + 0.000*SL 0.208 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.125 0.086 + 0.019*SL 0.088 + 0.019*SL 0.084 + 0.019*SL
tF 0.107 0.062 + 0.022*SL 0.061 + 0.023*SL 0.055 + 0.023*SL
tPLH 0.516 0.492 + 0.012*SL 0.501 + 0.010*SL 0.511 + 0.009*SL
tPHL 0.514 0.488 + 0.013*SL 0.493 + 0.012*SL 0.498 + 0.011*SL
G to Q tR 0.125 0.086 + 0.019*SL 0.088 + 0.019*SL 0.083 + 0.019*SL
tF 0.107 0.062 + 0.022*SL 0.061 + 0.023*SL 0.055 + 0.023*SL
tPLH 0.616 0.592 + 0.012*SL 0.601 + 0.010*SL 0.611 + 0.009*SL
tPHL 0.595 0.569 + 0.013*SL 0.575 + 0.012*SL 0.579 + 0.011*SL
E to Q tR 0.158 0.125 + 0.017*SL 0.114 + 0.019*SL 0.101 + 0.020*SL
tF 0.156 0.112 + 0.022*SL 0.112 + 0.022*SL 0.091 + 0.024*SL
tPLH 0.195 0.169 + 0.013*SL 0.180 + 0.010*SL 0.192 + 0.009*SL
tPHL 0.077 0.040 + 0.018*SL 0.065 + 0.012*SL 0.075 + 0.011*SL
tPLZ 0.137 0.137 + 0.000*SL 0.137 + 0.000*SL 0.137 + 0.000*SL
tPHZ 0.242 0.242 + 0.000*SL 0.242 + 0.000*SL 0.242 + 0.000*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-406 Samsung ASIC
LD1Q/LD1QD2
D Latch with Active High, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD1Q LD1QD2 LD1Q LD1QD2
DGDG
0.6 0.6 0.6 0.6 3.33 3.67
Parameter Symbol Value (ns)
LD1Q LD1QD2
Input Setup Time (D to G) tSU 0.303 0.310
Input Hold Time (D to G) tHD 0.090 0.081
Pulse Width High (G) tPWH 0.372 0.382
D
G
Q
GL
G
GB
D
GB
GL GL
GB Q
Truth Table
D G Q (n+1)
010
111
x 0 Q (n)
Samsung ASIC 3-407 STDM110
LD1Q/LD1QD2
D Latch with Active High, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD1Q
LD1QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.142 0.069 + 0.037*SL 0.062 + 0.038*SL 0.058 + 0.039*SL
tF 0.130 0.065 + 0.032*SL 0.062 + 0.033*SL 0.057 + 0.034*SL
tPLH 0.453 0.416 + 0.019*SL 0.421 + 0.018*SL 0.422 + 0.017*SL
tPHL 0.487 0.446 + 0.020*SL 0.454 + 0.018*SL 0.458 + 0.018*SL
G to Q tR 0.143 0.069 + 0.037*SL 0.064 + 0.038*SL 0.058 + 0.039*SL
tF 0.130 0.065 + 0.033*SL 0.063 + 0.033*SL 0.057 + 0.034*SL
tPLH 0.548 0.510 + 0.019*SL 0.515 + 0.018*SL 0.516 + 0.017*SL
tPHL 0.566 0.526 + 0.020*SL 0.534 + 0.018*SL 0.538 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.102 0.065 + 0.019*SL 0.065 + 0.018*SL 0.057 + 0.019*SL
tF 0.096 0.062 + 0.017*SL 0.066 + 0.016*SL 0.061 + 0.017*SL
tPLH 0.454 0.431 + 0.012*SL 0.440 + 0.009*SL 0.448 + 0.009*SL
tPHL 0.489 0.463 + 0.013*SL 0.475 + 0.010*SL 0.487 + 0.009*SL
G to Q tR 0.101 0.064 + 0.019*SL 0.064 + 0.019*SL 0.057 + 0.019*SL
tF 0.097 0.063 + 0.017*SL 0.066 + 0.016*SL 0.061 + 0.017*SL
tPLH 0.554 0.531 + 0.012*SL 0.540 + 0.009*SL 0.548 + 0.009*SL
tPHL 0.570 0.544 + 0.013*SL 0.555 + 0.010*SL 0.568 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-408 Samsung ASIC
LD2/LD2D2
D Latch with Active High, Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD2 LD2D2 LD2 LD2D2
D G RN D G RN
0.6 0.5 0.8 0.6 0.5 0.8 4.67 5.33
Parameter Symbol Value (ns)
LD2 LD2D2
Input Setup Time (D to G) tSU 0.419 0.452
Input Hold Time (D to G) tHD 0.000 0.000
Pulse Width High (G) tPWH 0.420 0.459
Pulse Width Low (RN) tPWL 0.333 0.385
Recovery Time (RN to G) tRC 0.077 0.118
Removal Time (RN to G) tRM 0.204 0.162
D
G
Q
QN
RN
GL
G
GB
D
GB
GL
GB
Q
QN
RN
GL
Truth Table
D G RN Q (n+1) QN (n+1)
01101
11110
x 0 1 Q (n) QN (n)
xx001
Samsung ASIC 3-409 STDM110
LD2/LD2D2
D Latch with Active High, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD2
[y ypp , , , , ]
()
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.174 0.097 + 0.038*SL 0.099 + 0.038*SL 0.094 + 0.039*SL
tF 0.145 0.078 + 0.034*SL 0.081 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.547 0.501 + 0.023*SL 0.514 + 0.020*SL 0.524 + 0.018*SL
tPHL 0.533 0.488 + 0.022*SL 0.501 + 0.019*SL 0.511 + 0.018*SL
G to Q tR 0.173 0.096 + 0.039*SL 0.099 + 0.038*SL 0.094 + 0.039*SL
tF 0.145 0.078 + 0.034*SL 0.081 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.553 0.507 + 0.023*SL 0.520 + 0.020*SL 0.531 + 0.018*SL
tPHL 0.538 0.494 + 0.022*SL 0.506 + 0.019*SL 0.516 + 0.018*SL
RN to Q tR 0.168 0.090 + 0.039*SL 0.094 + 0.038*SL 0.090 + 0.039*SL
tF 0.144 0.077 + 0.034*SL 0.082 + 0.033*SL 0.076 + 0.033*SL
tPLH 0.253 0.208 + 0.023*SL 0.221 + 0.020*SL 0.230 + 0.018*SL
tPHL 0.264 0.219 + 0.022*SL 0.231 + 0.019*SL 0.241 + 0.018*SL
D to QN tR 0.145 0.073 + 0.036*SL 0.068 + 0.037*SL 0.061 + 0.038*SL
tF 0.135 0.070 + 0.033*SL 0.069 + 0.033*SL 0.064 + 0.034*SL
tPLH 0.618 0.580 + 0.019*SL 0.587 + 0.017*SL 0.589 + 0.017*SL
tPHL 0.653 0.612 + 0.021*SL 0.622 + 0.018*SL 0.627 + 0.018*SL
G to QN tR 0.145 0.073 + 0.036*SL 0.068 + 0.037*SL 0.061 + 0.038*SL
tF 0.136 0.071 + 0.032*SL 0.070 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.624 0.585 + 0.019*SL 0.592 + 0.017*SL 0.594 + 0.017*SL
tPHL 0.660 0.618 + 0.021*SL 0.628 + 0.018*SL 0.633 + 0.018*SL
RN to QN tR 0.144 0.072 + 0.036*SL 0.067 + 0.037*SL 0.060 + 0.038*SL
tF 0.135 0.071 + 0.032*SL 0.067 + 0.033*SL 0.062 + 0.034*SL
tPLH 0.349 0.310 + 0.019*SL 0.317 + 0.017*SL 0.319 + 0.017*SL
tPHL 0.360 0.318 + 0.021*SL 0.328 + 0.018*SL 0.333 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-410 Samsung ASIC
LD2/LD2D2
D Latch with Active High, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD2D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.131 0.090 + 0.020*SL 0.096 + 0.019*SL 0.098 + 0.019*SL
tF 0.110 0.072 + 0.019*SL 0.080 + 0.017*SL 0.082 + 0.017*SL
tPLH 0.553 0.524 + 0.015*SL 0.538 + 0.011*SL 0.558 + 0.009*SL
tPHL 0.535 0.506 + 0.014*SL 0.520 + 0.011*SL 0.538 + 0.009*SL
G to Q tR 0.131 0.089 + 0.021*SL 0.097 + 0.019*SL 0.096 + 0.019*SL
tF 0.110 0.072 + 0.019*SL 0.080 + 0.017*SL 0.082 + 0.017*SL
tPLH 0.559 0.530 + 0.015*SL 0.544 + 0.011*SL 0.564 + 0.009*SL
tPHL 0.540 0.511 + 0.014*SL 0.525 + 0.011*SL 0.543 + 0.009*SL
RN to Q tR 0.126 0.085 + 0.021*SL 0.091 + 0.019*SL 0.092 + 0.019*SL
tF 0.108 0.071 + 0.018*SL 0.078 + 0.017*SL 0.080 + 0.017*SL
tPLH 0.256 0.227 + 0.014*SL 0.241 + 0.011*SL 0.259 + 0.009*SL
tPHL 0.261 0.233 + 0.014*SL 0.246 + 0.011*SL 0.263 + 0.009*SL
D to QN tR 0.108 0.072 + 0.018*SL 0.070 + 0.018*SL 0.062 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.074 + 0.016*SL 0.071 + 0.017*SL
tPLH 0.669 0.644 + 0.012*SL 0.655 + 0.010*SL 0.664 + 0.009*SL
tPHL 0.713 0.686 + 0.014*SL 0.699 + 0.010*SL 0.713 + 0.009*SL
G to QN tR 0.108 0.072 + 0.018*SL 0.070 + 0.018*SL 0.062 + 0.019*SL
tF 0.104 0.068 + 0.018*SL 0.075 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.674 0.650 + 0.012*SL 0.660 + 0.010*SL 0.669 + 0.009*SL
tPHL 0.719 0.692 + 0.014*SL 0.705 + 0.010*SL 0.719 + 0.009*SL
RN to QN tR 0.108 0.071 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.074 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.394 0.370 + 0.012*SL 0.380 + 0.010*SL 0.389 + 0.009*SL
tPHL 0.414 0.387 + 0.014*SL 0.400 + 0.010*SL 0.414 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-411 STDM110
LD2Q/LD2QD2
D Latch with Active High, Reset, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD2Q LD2QD2 LD2Q LD2QD2
D G RN D G RN
0.6 0.6 0.8 0.6 0.6 0.8 4.00 4.33
Parameter Symbol Value (ns)
LD2Q LD2QD2
Input Setup Time (D to G) tSU 0.311 0.317
Input Hold Time (D to G) tHD 0.083 0.078
Pulse Width High (G) tPWH 0.389 0.397
Pulse Width Low (RN) tPWL 0.345 0.375
Recovery Time (RN to G) tRC 0.000 0.000
Removal Time (RN to G) tRM 0.483 0.459
D
G
Q
RN
GL
G
GB
D
GB
GL
GB
Q
RN
GL
Truth Table
D G RN Q (n+1)
0110
1111
x 0 1 Q (n)
xx00
STDM110 3-412 Samsung ASIC
LD2Q/LD2QD2
D Latch with Active High, Reset, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD2Q
LD2QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.163 0.089 + 0.037*SL 0.088 + 0.037*SL 0.081 + 0.038*SL
tF 0.132 0.070 + 0.031*SL 0.069 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.513 0.471 + 0.021*SL 0.482 + 0.019*SL 0.489 + 0.018*SL
tPHL 0.516 0.475 + 0.020*SL 0.485 + 0.018*SL 0.491 + 0.017*SL
G to Q tR 0.163 0.089 + 0.037*SL 0.088 + 0.037*SL 0.081 + 0.038*SL
tF 0.133 0.070 + 0.031*SL 0.070 + 0.031*SL 0.066 + 0.032*SL
tPLH 0.618 0.575 + 0.021*SL 0.587 + 0.019*SL 0.594 + 0.018*SL
tPHL 0.602 0.562 + 0.020*SL 0.572 + 0.018*SL 0.578 + 0.017*SL
RN to Q tR 0.164 0.089 + 0.037*SL 0.089 + 0.037*SL 0.082 + 0.038*SL
tF 0.136 0.075 + 0.031*SL 0.073 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.243 0.200 + 0.021*SL 0.212 + 0.019*SL 0.219 + 0.018*SL
tPHL 0.250 0.209 + 0.020*SL 0.220 + 0.018*SL 0.226 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.123 0.082 + 0.020*SL 0.088 + 0.019*SL 0.087 + 0.019*SL
tF 0.101 0.067 + 0.017*SL 0.072 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.519 0.491 + 0.014*SL 0.504 + 0.011*SL 0.522 + 0.009*SL
tPHL 0.516 0.490 + 0.013*SL 0.502 + 0.010*SL 0.518 + 0.009*SL
G to Q tR 0.123 0.082 + 0.020*SL 0.088 + 0.019*SL 0.087 + 0.019*SL
tF 0.099 0.064 + 0.017*SL 0.072 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.625 0.597 + 0.014*SL 0.610 + 0.011*SL 0.628 + 0.009*SL
tPHL 0.604 0.578 + 0.013*SL 0.590 + 0.010*SL 0.606 + 0.009*SL
RN to Q tR 0.123 0.083 + 0.020*SL 0.089 + 0.019*SL 0.087 + 0.019*SL
tF 0.104 0.071 + 0.017*SL 0.076 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.249 0.221 + 0.014*SL 0.234 + 0.011*SL 0.252 + 0.009*SL
tPHL 0.250 0.223 + 0.013*SL 0.236 + 0.010*SL 0.252 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-413 STDM110
LD3/LD3D2
D Latch with Active High, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD3 LD3D2 LD3 LD3D2
D G SN D G SN
0.6 0.5 0.8 0.6 0.6 0.8 4.33 4.67
Parameter Symbol Value (ns)
LD3 LD3D2
Input Setup Time (D to G) tSU 0.359 0.386
Input Hold Time (D to G) tHD 0.046 0.014
Pulse Width High (G) tPWH 0.424 0.465
Pulse Width Low (SN) tPWL 0.334 0.388
Recovery Time (SN to G) tRC 0.082 0.115
Removal Time (SN to G) tRM 0.198 0.165
D
G
Q
QN
SN
GL
G
GB
D
GB
GL
GB
QN
Q
SN
GL
Truth Table
D G SN Q (n+1) QN (n+1)
01101
11110
x 0 1 Q (n) QN (n)
xx010
STDM110 3-414 Samsung ASIC
LD3/LD3D2
D Latch with Active High, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD3
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.146 0.073 + 0.036*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.136 0.072 + 0.032*SL 0.068 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.522 0.483 + 0.019*SL 0.490 + 0.018*SL 0.491 + 0.017*SL
tPHL 0.594 0.552 + 0.021*SL 0.562 + 0.018*SL 0.568 + 0.018*SL
G to Q tR 0.145 0.071 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.135 0.070 + 0.033*SL 0.069 + 0.033*SL 0.064 + 0.034*SL
tPLH 0.617 0.578 + 0.019*SL 0.585 + 0.018*SL 0.587 + 0.017*SL
tPHL 0.666 0.624 + 0.021*SL 0.634 + 0.018*SL 0.639 + 0.018*SL
SN to Q tR 0.145 0.072 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.136 0.071 + 0.032*SL 0.070 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.350 0.311 + 0.019*SL 0.318 + 0.018*SL 0.320 + 0.017*SL
tPHL 0.365 0.323 + 0.021*SL 0.333 + 0.018*SL 0.338 + 0.018*SL
D to QN tR 0.173 0.097 + 0.038*SL 0.100 + 0.037*SL 0.097 + 0.038*SL
tF 0.145 0.077 + 0.034*SL 0.082 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.485 0.439 + 0.023*SL 0.453 + 0.019*SL 0.463 + 0.018*SL
tPHL 0.438 0.393 + 0.022*SL 0.405 + 0.019*SL 0.415 + 0.018*SL
G to QN tR 0.174 0.098 + 0.038*SL 0.100 + 0.037*SL 0.095 + 0.038*SL
tF 0.146 0.078 + 0.034*SL 0.083 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.557 0.511 + 0.023*SL 0.525 + 0.019*SL 0.535 + 0.018*SL
tPHL 0.533 0.488 + 0.022*SL 0.500 + 0.019*SL 0.510 + 0.018*SL
SN to QN tR 0.168 0.092 + 0.038*SL 0.095 + 0.038*SL 0.091 + 0.038*SL
tF 0.145 0.078 + 0.034*SL 0.083 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.256 0.211 + 0.023*SL 0.224 + 0.019*SL 0.234 + 0.018*SL
tPHL 0.265 0.221 + 0.022*SL 0.233 + 0.019*SL 0.242 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-415 STDM110
LD3/LD3D2
D Latch with Active High, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD3D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.109 0.073 + 0.018*SL 0.071 + 0.018*SL 0.063 + 0.019*SL
tF 0.105 0.071 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.573 0.549 + 0.012*SL 0.559 + 0.010*SL 0.568 + 0.009*SL
tPHL 0.650 0.623 + 0.013*SL 0.636 + 0.010*SL 0.650 + 0.009*SL
G to Q tR 0.108 0.072 + 0.018*SL 0.071 + 0.018*SL 0.062 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.675 0.650 + 0.012*SL 0.661 + 0.010*SL 0.670 + 0.009*SL
tPHL 0.732 0.705 + 0.013*SL 0.718 + 0.010*SL 0.732 + 0.009*SL
SN to Q tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.062 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.074 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.400 0.375 + 0.012*SL 0.386 + 0.010*SL 0.395 + 0.009*SL
tPHL 0.417 0.390 + 0.013*SL 0.403 + 0.010*SL 0.417 + 0.009*SL
D to QN tR 0.131 0.090 + 0.021*SL 0.097 + 0.019*SL 0.098 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.079 + 0.017*SL 0.081 + 0.016*SL
tPLH 0.490 0.461 + 0.015*SL 0.475 + 0.011*SL 0.495 + 0.009*SL
tPHL 0.441 0.412 + 0.014*SL 0.426 + 0.011*SL 0.443 + 0.009*SL
G to QN tR 0.131 0.089 + 0.021*SL 0.096 + 0.019*SL 0.098 + 0.019*SL
tF 0.110 0.073 + 0.018*SL 0.080 + 0.017*SL 0.082 + 0.016*SL
tPLH 0.572 0.543 + 0.015*SL 0.557 + 0.011*SL 0.577 + 0.009*SL
tPHL 0.542 0.514 + 0.014*SL 0.527 + 0.011*SL 0.545 + 0.009*SL
SN to QN tR 0.127 0.086 + 0.020*SL 0.093 + 0.019*SL 0.092 + 0.019*SL
tF 0.110 0.074 + 0.018*SL 0.079 + 0.017*SL 0.082 + 0.016*SL
tPLH 0.259 0.230 + 0.014*SL 0.244 + 0.011*SL 0.263 + 0.009*SL
tPHL 0.267 0.238 + 0.014*SL 0.252 + 0.011*SL 0.270 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-416 Samsung ASIC
LD4/LD4D2
D Latch with Active High, Reset, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD4 LD4D2 LD4 LD4D2
D G SN RN D G SN RN
0.6 0.5 0.8 0.8 0.6 0.5 0.8 0.8 6.00 6.33
Parameter Symbol Value (ns)
LD4 LD4D2
Input Setup Time (D to G) tSU 0.478 0.520
Input Hold Time (D to G) tHD 0.000 0.000
Pulse Width High (G) tPWH 0.489 0.533
Pulse Width Low (SN) tPWL 0.717 0.741
Recovery Time (SN to G) tRC 0.000 0.000
Removal Time (SN to G) tRM 0.641 0.583
Pulse Width Low (RN) tPWL 0.416 0.483
Recovery Time (RN to G) tRC 0.152 0.201
Removal Time (RN to G) tRM 0.141 0.092
Recovery Time (SN to RN) tRC 0.324 0.389
Removal Time (SN to RN) tRM 0.000 0.000
D
G
Q
QN
SN
RN
GL
GGB
D
GB
GL
GB
QN
Q
GL
SN
RN
RN
RN SN
SN
Truth Table
D G RN SN Q
(n+1) QN
(n+1)
011101
111110
x 0 1 1 Q (n) QN (n)
xx1010
xx0101
xx0010
Samsung ASIC 3-417 STDM110
LD4/LD4D2
D Latch with Active High, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.147 0.076 + 0.036*SL 0.071 + 0.037*SL 0.063 + 0.038*SL
tF 0.134 0.072 + 0.031*SL 0.073 + 0.031*SL 0.067 + 0.032*SL
tPLH 0.738 0.699 + 0.019*SL 0.707 + 0.017*SL 0.709 + 0.017*SL
tPHL 0.755 0.714 + 0.020*SL 0.725 + 0.018*SL 0.731 + 0.017*SL
G to Q tR 0.146 0.074 + 0.036*SL 0.070 + 0.037*SL 0.064 + 0.038*SL
tF 0.134 0.071 + 0.031*SL 0.073 + 0.031*SL 0.067 + 0.032*SL
tPLH 0.747 0.708 + 0.019*SL 0.716 + 0.017*SL 0.719 + 0.017*SL
tPHL 0.761 0.720 + 0.020*SL 0.732 + 0.018*SL 0.738 + 0.017*SL
SN to Q tR 0.146 0.076 + 0.035*SL 0.068 + 0.037*SL 0.063 + 0.038*SL
tF 0.134 0.073 + 0.031*SL 0.072 + 0.031*SL 0.066 + 0.032*SL
tPLH 0.366 0.328 + 0.019*SL 0.335 + 0.017*SL 0.338 + 0.017*SL
tPHL 0.372 0.331 + 0.020*SL 0.342 + 0.018*SL 0.349 + 0.017*SL
RN to Q tR 0.146 0.075 + 0.036*SL 0.068 + 0.037*SL 0.063 + 0.038*SL
tF 0.134 0.072 + 0.031*SL 0.073 + 0.031*SL 0.066 + 0.032*SL
tPLH 0.443 0.405 + 0.019*SL 0.413 + 0.017*SL 0.415 + 0.017*SL
tPHL 0.487 0.446 + 0.020*SL 0.457 + 0.018*SL 0.464 + 0.017*SL
D to QN tR 0.168 0.091 + 0.039*SL 0.094 + 0.038*SL 0.090 + 0.038*SL
tF 0.139 0.075 + 0.032*SL 0.077 + 0.031*SL 0.076 + 0.031*SL
tPLH 0.639 0.593 + 0.023*SL 0.606 + 0.019*SL 0.616 + 0.018*SL
tPHL 0.637 0.594 + 0.021*SL 0.606 + 0.019*SL 0.616 + 0.017*SL
G to QN tR 0.168 0.091 + 0.039*SL 0.094 + 0.038*SL 0.090 + 0.038*SL
tF 0.139 0.075 + 0.032*SL 0.079 + 0.031*SL 0.077 + 0.031*SL
tPLH 0.645 0.600 + 0.023*SL 0.613 + 0.019*SL 0.622 + 0.018*SL
tPHL 0.646 0.603 + 0.021*SL 0.615 + 0.019*SL 0.625 + 0.017*SL
SN to QN tR 0.168 0.091 + 0.039*SL 0.094 + 0.038*SL 0.089 + 0.038*SL
tF 0.141 0.077 + 0.032*SL 0.080 + 0.031*SL 0.078 + 0.031*SL
tPLH 0.256 0.211 + 0.023*SL 0.224 + 0.019*SL 0.233 + 0.018*SL
tPHL 0.266 0.223 + 0.022*SL 0.235 + 0.019*SL 0.245 + 0.017*SL
RN to QN tR 0.169 0.092 + 0.038*SL 0.093 + 0.038*SL 0.090 + 0.038*SL
tF 0.139 0.074 + 0.032*SL 0.079 + 0.031*SL 0.076 + 0.031*SL
tPLH 0.372 0.326 + 0.023*SL 0.340 + 0.019*SL 0.349 + 0.018*SL
tPHL 0.343 0.300 + 0.021*SL 0.312 + 0.019*SL 0.322 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-418 Samsung ASIC
LD4/LD4D2
D Latch with Active High, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.111 0.075 + 0.018*SL 0.074 + 0.018*SL 0.066 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.078 + 0.016*SL 0.075 + 0.017*SL
tPLH 0.787 0.762 + 0.012*SL 0.773 + 0.010*SL 0.784 + 0.009*SL
tPHL 0.814 0.786 + 0.014*SL 0.800 + 0.011*SL 0.816 + 0.009*SL
G to Q tR 0.110 0.073 + 0.018*SL 0.076 + 0.018*SL 0.065 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.078 + 0.016*SL 0.075 + 0.017*SL
tPLH 0.796 0.772 + 0.012*SL 0.783 + 0.010*SL 0.793 + 0.009*SL
tPHL 0.820 0.793 + 0.014*SL 0.806 + 0.011*SL 0.822 + 0.009*SL
SN to Q tR 0.110 0.074 + 0.018*SL 0.076 + 0.018*SL 0.064 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.078 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.413 0.388 + 0.012*SL 0.400 + 0.010*SL 0.410 + 0.009*SL
tPHL 0.432 0.404 + 0.014*SL 0.417 + 0.011*SL 0.433 + 0.009*SL
RN to Q tR 0.109 0.073 + 0.018*SL 0.075 + 0.018*SL 0.064 + 0.019*SL
tF 0.108 0.073 + 0.017*SL 0.077 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.491 0.466 + 0.012*SL 0.477 + 0.010*SL 0.488 + 0.009*SL
tPHL 0.546 0.518 + 0.014*SL 0.532 + 0.011*SL 0.548 + 0.009*SL
D to QN tR 0.125 0.083 + 0.021*SL 0.092 + 0.019*SL 0.094 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.078 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.642 0.613 + 0.014*SL 0.627 + 0.011*SL 0.646 + 0.009*SL
tPHL 0.641 0.613 + 0.014*SL 0.626 + 0.011*SL 0.644 + 0.009*SL
G to QN tR 0.125 0.083 + 0.021*SL 0.091 + 0.019*SL 0.094 + 0.019*SL
tF 0.108 0.073 + 0.017*SL 0.078 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.648 0.619 + 0.014*SL 0.633 + 0.011*SL 0.652 + 0.009*SL
tPHL 0.651 0.623 + 0.014*SL 0.636 + 0.011*SL 0.654 + 0.009*SL
SN to QN tR 0.126 0.086 + 0.020*SL 0.093 + 0.019*SL 0.093 + 0.019*SL
tF 0.110 0.074 + 0.018*SL 0.080 + 0.016*SL 0.083 + 0.016*SL
tPLH 0.259 0.230 + 0.014*SL 0.244 + 0.011*SL 0.263 + 0.009*SL
tPHL 0.268 0.239 + 0.014*SL 0.253 + 0.011*SL 0.271 + 0.009*SL
RN to QN tR 0.126 0.084 + 0.021*SL 0.092 + 0.019*SL 0.094 + 0.019*SL
tF 0.107 0.072 + 0.018*SL 0.077 + 0.016*SL 0.081 + 0.016*SL
tPLH 0.374 0.345 + 0.014*SL 0.359 + 0.011*SL 0.379 + 0.009*SL
tPHL 0.346 0.317 + 0.014*SL 0.331 + 0.011*SL 0.349 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-419 STDM110
LD5/LD5D2
D Latch with Active Low, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD5 LD5D2 LD5 LD5D2
DGNDGN
0.6 0.5 0.6 0.6 4.00 4.33
Parameter Symbol Value (ns)
LD5 LD5D2
Input Setup Time (D to GN) tSU 0.303 0.322
Input Hold Time (D to GN) tHD 0.016 0.000
Pulse Width Low (GN) tPWL 0.386 0.413
D
GN
Q
QN
QN
Q
D
GNB
GLN
GLN
GNB
GLN
GN
GNB
Truth Table
D GN Q (n+1) QN (n+1)
0001
1010
x 1 Q (n) QN (n)
STDM110 3-420 Samsung ASIC
LD5/LD5D2
D Latch with Active Low, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD5
LD5D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.144 0.071 + 0.037*SL 0.064 + 0.038*SL 0.059 + 0.039*SL
tF 0.132 0.067 + 0.033*SL 0.064 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.503 0.465 + 0.019*SL 0.471 + 0.018*SL 0.473 + 0.017*SL
tPHL 0.537 0.496 + 0.021*SL 0.505 + 0.018*SL 0.509 + 0.018*SL
GN to Q tR 0.145 0.071 + 0.037*SL 0.066 + 0.038*SL 0.059 + 0.039*SL
tF 0.133 0.067 + 0.033*SL 0.066 + 0.033*SL 0.059 + 0.034*SL
tPLH 0.593 0.554 + 0.019*SL 0.561 + 0.018*SL 0.562 + 0.017*SL
tPHL 0.666 0.625 + 0.021*SL 0.634 + 0.018*SL 0.638 + 0.018*SL
D to QN tR 0.157 0.083 + 0.037*SL 0.080 + 0.038*SL 0.073 + 0.038*SL
tF 0.144 0.076 + 0.034*SL 0.080 + 0.033*SL 0.076 + 0.034*SL
tPLH 0.435 0.394 + 0.020*SL 0.403 + 0.018*SL 0.408 + 0.018*SL
tPHL 0.424 0.379 + 0.022*SL 0.391 + 0.019*SL 0.401 + 0.018*SL
GN to QN tR 0.157 0.084 + 0.037*SL 0.080 + 0.038*SL 0.073 + 0.038*SL
tF 0.144 0.076 + 0.034*SL 0.081 + 0.033*SL 0.075 + 0.034*SL
tPLH 0.564 0.523 + 0.020*SL 0.532 + 0.018*SL 0.537 + 0.018*SL
tPHL 0.514 0.469 + 0.022*SL 0.481 + 0.019*SL 0.491 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.107 0.071 + 0.018*SL 0.071 + 0.018*SL 0.061 + 0.019*SL
tF 0.099 0.064 + 0.017*SL 0.069 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.552 0.528 + 0.012*SL 0.539 + 0.010*SL 0.547 + 0.009*SL
tPHL 0.586 0.559 + 0.013*SL 0.571 + 0.010*SL 0.585 + 0.009*SL
GN to Q tR 0.107 0.070 + 0.018*SL 0.070 + 0.018*SL 0.060 + 0.019*SL
tF 0.099 0.064 + 0.018*SL 0.070 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.640 0.616 + 0.012*SL 0.626 + 0.010*SL 0.635 + 0.009*SL
tPHL 0.705 0.678 + 0.013*SL 0.690 + 0.010*SL 0.703 + 0.009*SL
D to QN tR 0.115 0.078 + 0.018*SL 0.078 + 0.018*SL 0.071 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.076 + 0.017*SL 0.076 + 0.017*SL
tPLH 0.442 0.417 + 0.013*SL 0.429 + 0.010*SL 0.440 + 0.009*SL
tPHL 0.425 0.397 + 0.014*SL 0.410 + 0.011*SL 0.426 + 0.009*SL
GN to QN tR 0.115 0.078 + 0.019*SL 0.079 + 0.018*SL 0.072 + 0.019*SL
tF 0.106 0.070 + 0.018*SL 0.076 + 0.017*SL 0.076 + 0.017*SL
tPLH 0.561 0.535 + 0.013*SL 0.547 + 0.010*SL 0.559 + 0.009*SL
tPHL 0.512 0.484 + 0.014*SL 0.498 + 0.011*SL 0.514 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-421 STDM110
LD5Q/LD5QD2
D Latch with Active Low,Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD5Q LD5QD2 LD5Q LD5QD2
DGNDGN
0.6 0.6 0.6 0.6 3.33 3.67
Parameter Symbol Value (ns)
LD5Q LD5QD2
Input Setup Time (D to GN) tSU 0.288 0.290
Input Hold Time (D to GN) tHD 0.038 0.034
Pulse Width Low (GN) tPWL 0.363 0.365
D
GN
Q
Q
D
GNB
GLN
GLN
GNB
GLN
GN
GNB
Truth Table
D GN Q (n+1)
000
101
x 1 Q (n)
STDM110 3-422 Samsung ASIC
LD5Q/LD5QD2
D Latch with Active Low, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD5Q
LD5QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.143 0.069 + 0.037*SL 0.063 + 0.038*SL 0.058 + 0.039*SL
tF 0.130 0.065 + 0.033*SL 0.063 + 0.033*SL 0.058 + 0.034*SL
tPLH 0.456 0.418 + 0.019*SL 0.424 + 0.018*SL 0.425 + 0.017*SL
tPHL 0.489 0.448 + 0.020*SL 0.456 + 0.018*SL 0.460 + 0.018*SL
GN to Q tR 0.141 0.067 + 0.037*SL 0.063 + 0.038*SL 0.058 + 0.039*SL
tF 0.130 0.065 + 0.032*SL 0.062 + 0.033*SL 0.057 + 0.034*SL
tPLH 0.547 0.509 + 0.019*SL 0.514 + 0.018*SL 0.515 + 0.017*SL
tPHL 0.610 0.570 + 0.020*SL 0.578 + 0.018*SL 0.582 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.102 0.065 + 0.019*SL 0.065 + 0.018*SL 0.056 + 0.019*SL
tF 0.096 0.062 + 0.017*SL 0.065 + 0.016*SL 0.061 + 0.017*SL
tPLH 0.455 0.431 + 0.012*SL 0.441 + 0.009*SL 0.448 + 0.009*SL
tPHL 0.489 0.463 + 0.013*SL 0.474 + 0.010*SL 0.487 + 0.009*SL
GN to Q tR 0.101 0.065 + 0.018*SL 0.063 + 0.019*SL 0.056 + 0.019*SL
tF 0.095 0.060 + 0.018*SL 0.064 + 0.016*SL 0.062 + 0.017*SL
tPLH 0.541 0.518 + 0.012*SL 0.527 + 0.009*SL 0.535 + 0.009*SL
tPHL 0.608 0.582 + 0.013*SL 0.594 + 0.010*SL 0.606 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-423 STDM110
LD6/LD6D2
D Latch with Active Low, Reset, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD6 LD6D2 LD6 LD6D2
D GN RN D GN RN
0.6 0.6 0.8 0.6 0.6 0.8 4.67 5.33
Parameter Symbol Value (ns)
LD6 LD6D2
Input Setup Time (D to GN) tSU 0.402 0.421
Input Hold Time (D to GN) tHD 0.000 0.000
Pulse Width Low (GN) tPWL 0.403 0.443
Pulse Width Low (RN) tPWL 0.334 0.385
Recovery Time (RN to GN) tRC 0.029 0.071
Removal Time (RN to GN) tRM 0.251 0.208
D
GN
Q
QN
RN
GLN
GN
GNB
RN
RN
DGNB
GLN
Q
RN
GLN
GNB
QN
Truth Table
D GN RN Q (n+1) QN (n+1)
00101
10110
x 1 1 Q (n) QN (n)
xx001
STDM110 3-424 Samsung ASIC
LD6/LD6D2
D Latch with Active Low, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD6
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.173 0.097 + 0.038*SL 0.099 + 0.038*SL 0.094 + 0.038*SL
tF 0.145 0.078 + 0.034*SL 0.081 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.547 0.501 + 0.023*SL 0.514 + 0.020*SL 0.525 + 0.018*SL
tPHL 0.533 0.488 + 0.022*SL 0.500 + 0.019*SL 0.511 + 0.018*SL
GN to Q tR 0.173 0.096 + 0.038*SL 0.099 + 0.038*SL 0.095 + 0.038*SL
tF 0.146 0.078 + 0.034*SL 0.083 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.607 0.561 + 0.023*SL 0.575 + 0.020*SL 0.585 + 0.018*SL
tPHL 0.529 0.484 + 0.022*SL 0.497 + 0.019*SL 0.507 + 0.018*SL
RN to Q tR 0.168 0.090 + 0.039*SL 0.094 + 0.038*SL 0.090 + 0.038*SL
tF 0.145 0.077 + 0.034*SL 0.082 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.253 0.208 + 0.023*SL 0.221 + 0.019*SL 0.231 + 0.018*SL
tPHL 0.265 0.220 + 0.022*SL 0.232 + 0.019*SL 0.242 + 0.018*SL
D to QN tR 0.146 0.073 + 0.036*SL 0.068 + 0.038*SL 0.060 + 0.039*SL
tF 0.135 0.070 + 0.033*SL 0.068 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.618 0.580 + 0.019*SL 0.586 + 0.018*SL 0.588 + 0.017*SL
tPHL 0.654 0.612 + 0.021*SL 0.622 + 0.018*SL 0.628 + 0.018*SL
GN to QN tR 0.145 0.072 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.135 0.071 + 0.032*SL 0.068 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.614 0.576 + 0.019*SL 0.583 + 0.018*SL 0.584 + 0.017*SL
tPHL 0.714 0.672 + 0.021*SL 0.683 + 0.018*SL 0.688 + 0.018*SL
RN to QN tR 0.145 0.072 + 0.036*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.135 0.070 + 0.032*SL 0.067 + 0.033*SL 0.062 + 0.034*SL
tPLH 0.350 0.311 + 0.019*SL 0.318 + 0.018*SL 0.320 + 0.017*SL
tPHL 0.360 0.318 + 0.021*SL 0.328 + 0.018*SL 0.334 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-425 STDM110
LD6/LD6D2
D Latch with Active Low, Reset, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD6D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.131 0.090 + 0.020*SL 0.096 + 0.019*SL 0.097 + 0.019*SL
tF 0.109 0.072 + 0.019*SL 0.080 + 0.017*SL 0.082 + 0.017*SL
tPLH 0.552 0.523 + 0.015*SL 0.537 + 0.011*SL 0.557 + 0.009*SL
tPHL 0.534 0.506 + 0.014*SL 0.519 + 0.011*SL 0.537 + 0.009*SL
GN to Q tR 0.130 0.089 + 0.021*SL 0.096 + 0.019*SL 0.097 + 0.019*SL
tF 0.110 0.074 + 0.018*SL 0.079 + 0.017*SL 0.082 + 0.017*SL
tPLH 0.613 0.584 + 0.015*SL 0.598 + 0.011*SL 0.617 + 0.009*SL
tPHL 0.530 0.501 + 0.014*SL 0.515 + 0.011*SL 0.533 + 0.009*SL
RN to Q tR 0.126 0.085 + 0.021*SL 0.091 + 0.019*SL 0.092 + 0.019*SL
tF 0.108 0.071 + 0.018*SL 0.078 + 0.017*SL 0.079 + 0.017*SL
tPLH 0.255 0.226 + 0.014*SL 0.240 + 0.011*SL 0.259 + 0.009*SL
tPHL 0.261 0.232 + 0.014*SL 0.246 + 0.011*SL 0.263 + 0.009*SL
D to QN tR 0.108 0.072 + 0.018*SL 0.070 + 0.018*SL 0.062 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.017*SL
tPLH 0.668 0.644 + 0.012*SL 0.654 + 0.010*SL 0.663 + 0.009*SL
tPHL 0.714 0.687 + 0.014*SL 0.700 + 0.010*SL 0.715 + 0.009*SL
GN to QN tR 0.108 0.072 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.075 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.664 0.639 + 0.012*SL 0.650 + 0.010*SL 0.659 + 0.009*SL
tPHL 0.775 0.748 + 0.014*SL 0.760 + 0.010*SL 0.775 + 0.009*SL
RN to QN tR 0.108 0.071 + 0.018*SL 0.072 + 0.018*SL 0.062 + 0.019*SL
tF 0.104 0.069 + 0.018*SL 0.074 + 0.016*SL 0.071 + 0.017*SL
tPLH 0.394 0.370 + 0.012*SL 0.380 + 0.010*SL 0.389 + 0.009*SL
tPHL 0.415 0.388 + 0.014*SL 0.401 + 0.010*SL 0.416 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-426 Samsung ASIC
LD6Q/LD6QD2
D Latch with Active Low, Reset, Q Output Only, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C,1.8V, Unit = ns)
Input Load (SL) Gate Count
LD6Q LD6QD2 LD6Q LD6QD2
D GN RN D GN RN
0.6 0.6 0.8 0.6 0.6 0.8 4.00 4.33
Parameter Symbol Value (ns)
LD6Q LD6QD2
Input Setup Time (D to GN) tSU 0.295 0.298
Input Hold Time (D to GN) tHD 0.033 0.029
Pulse Width Low (GN) tPWL 0.372 0.373
Pulse Width Low (RN) tPWL 0.345 0.375
Recovery Time (RN to GN) tRC 0.000 0.000
Removal Time (RN to GN) tRM 0.457 0.435
D
GN
Q
RN
GLN
GN
GNB
RN
RN
DGNB
GLN
Q
RN
GLN
GNB
Truth Table
D GN RN Q (n+1)
0010
1011
x 1 1 Q (n)
xx00
Samsung ASIC 3-427 STDM110
LD6Q/LD6QD2
D Latch with Active Low, Reset, Q Output Only, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD6Q
LD6QD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.163 0.089 + 0.037*SL 0.088 + 0.037*SL 0.082 + 0.038*SL
tF 0.132 0.070 + 0.031*SL 0.069 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.512 0.469 + 0.021*SL 0.480 + 0.019*SL 0.487 + 0.018*SL
tPHL 0.513 0.473 + 0.020*SL 0.483 + 0.018*SL 0.489 + 0.017*SL
GN to Q tR 0.162 0.088 + 0.037*SL 0.086 + 0.038*SL 0.081 + 0.038*SL
tF 0.132 0.070 + 0.031*SL 0.069 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.603 0.561 + 0.021*SL 0.572 + 0.018*SL 0.579 + 0.018*SL
tPHL 0.636 0.596 + 0.020*SL 0.606 + 0.018*SL 0.612 + 0.017*SL
RN to Q tR 0.164 0.089 + 0.037*SL 0.090 + 0.037*SL 0.082 + 0.038*SL
tF 0.136 0.075 + 0.031*SL 0.073 + 0.031*SL 0.069 + 0.032*SL
tPLH 0.244 0.201 + 0.021*SL 0.213 + 0.019*SL 0.220 + 0.018*SL
tPHL 0.251 0.210 + 0.020*SL 0.220 + 0.018*SL 0.227 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.122 0.082 + 0.020*SL 0.087 + 0.019*SL 0.087 + 0.019*SL
tF 0.100 0.066 + 0.017*SL 0.072 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.517 0.489 + 0.014*SL 0.502 + 0.011*SL 0.520 + 0.009*SL
tPHL 0.513 0.487 + 0.013*SL 0.499 + 0.010*SL 0.515 + 0.009*SL
GN to Q tR 0.123 0.083 + 0.020*SL 0.088 + 0.019*SL 0.085 + 0.019*SL
tF 0.099 0.065 + 0.017*SL 0.071 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.606 0.578 + 0.014*SL 0.592 + 0.011*SL 0.609 + 0.009*SL
tPHL 0.634 0.608 + 0.013*SL 0.620 + 0.010*SL 0.636 + 0.009*SL
RN to Q tR 0.123 0.083 + 0.020*SL 0.089 + 0.019*SL 0.087 + 0.019*SL
tF 0.104 0.070 + 0.017*SL 0.076 + 0.015*SL 0.075 + 0.016*SL
tPLH 0.249 0.222 + 0.014*SL 0.235 + 0.011*SL 0.252 + 0.009*SL
tPHL 0.250 0.224 + 0.013*SL 0.236 + 0.010*SL 0.252 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-428 Samsung ASIC
LD7/LD7D2
D Latch with Active Low, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD7 LD7D2 LD7 LD7D2
D GN SN D GN SN
0.6 0.6 0.8 0.6 0.6 0.8 4.33 4.67
Parameter Symbol Value (ns)
LD7 LD7D2
Input Setup Time (D to GN) tSU 0.312 0.331
Input Hold Time (D to GN) tHD 0.000 0.000
Pulse Width Low (GN) tPWL 0.406 0.446
Pulse Width Low (SN) tPWL 0.333 0.388
Recovery Time (SN to GN) tRC 0.037 0.083
Removal Time (SN to GN) tRM 0.243 0.197
D
GN
Q
QN
SN
GLN
GN
GNB
SN
SN
D
GNB
GLN
QN
SN
GLN
GNB
Q
Truth Table
D GN SN Q (n+1) QN (n+1)
00101
10110
x 1 1 Q (n) QN (n)
xx010
Samsung ASIC 3-429 STDM110
LD7/LD7D2
D Latch with Active Low, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD7
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.146 0.073 + 0.036*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.136 0.072 + 0.032*SL 0.068 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.522 0.483 + 0.019*SL 0.490 + 0.018*SL 0.491 + 0.017*SL
tPHL 0.595 0.553 + 0.021*SL 0.563 + 0.018*SL 0.568 + 0.018*SL
GN to Q tR 0.145 0.072 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.136 0.072 + 0.032*SL 0.068 + 0.033*SL 0.064 + 0.034*SL
tPLH 0.606 0.567 + 0.019*SL 0.574 + 0.018*SL 0.576 + 0.017*SL
tPHL 0.716 0.674 + 0.021*SL 0.684 + 0.018*SL 0.690 + 0.018*SL
SN to Q tR 0.145 0.071 + 0.037*SL 0.067 + 0.038*SL 0.060 + 0.039*SL
tF 0.136 0.071 + 0.032*SL 0.070 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.349 0.310 + 0.019*SL 0.317 + 0.018*SL 0.319 + 0.017*SL
tPHL 0.365 0.323 + 0.021*SL 0.333 + 0.018*SL 0.338 + 0.018*SL
D to QN tR 0.173 0.097 + 0.038*SL 0.100 + 0.037*SL 0.096 + 0.038*SL
tF 0.145 0.077 + 0.034*SL 0.082 + 0.033*SL 0.078 + 0.033*SL
tPLH 0.485 0.439 + 0.023*SL 0.453 + 0.019*SL 0.464 + 0.018*SL
tPHL 0.438 0.393 + 0.022*SL 0.405 + 0.019*SL 0.415 + 0.018*SL
GN to QN tR 0.174 0.097 + 0.038*SL 0.100 + 0.037*SL 0.096 + 0.038*SL
tF 0.145 0.078 + 0.034*SL 0.083 + 0.032*SL 0.077 + 0.033*SL
tPLH 0.606 0.561 + 0.023*SL 0.574 + 0.019*SL 0.585 + 0.018*SL
tPHL 0.522 0.477 + 0.022*SL 0.490 + 0.019*SL 0.499 + 0.018*SL
SN to QN tR 0.168 0.092 + 0.038*SL 0.094 + 0.038*SL 0.091 + 0.038*SL
tF 0.145 0.078 + 0.034*SL 0.083 + 0.033*SL 0.077 + 0.033*SL
tPLH 0.256 0.211 + 0.023*SL 0.224 + 0.019*SL 0.233 + 0.018*SL
tPHL 0.264 0.220 + 0.022*SL 0.232 + 0.019*SL 0.241 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-430 Samsung ASIC
LD7/LD7D2
D Latch with Active Low, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD7D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.109 0.073 + 0.018*SL 0.072 + 0.018*SL 0.063 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.074 + 0.016*SL 0.070 + 0.016*SL
tPLH 0.573 0.549 + 0.012*SL 0.560 + 0.010*SL 0.568 + 0.009*SL
tPHL 0.650 0.624 + 0.013*SL 0.636 + 0.010*SL 0.650 + 0.009*SL
GN to Q tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.062 + 0.019*SL
tF 0.105 0.070 + 0.017*SL 0.075 + 0.016*SL 0.071 + 0.016*SL
tPLH 0.662 0.638 + 0.012*SL 0.649 + 0.010*SL 0.657 + 0.009*SL
tPHL 0.770 0.743 + 0.014*SL 0.756 + 0.010*SL 0.770 + 0.009*SL
SN to Q tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.062 + 0.019*SL
tF 0.103 0.068 + 0.018*SL 0.074 + 0.016*SL 0.070 + 0.017*SL
tPLH 0.399 0.375 + 0.012*SL 0.385 + 0.010*SL 0.394 + 0.009*SL
tPHL 0.416 0.390 + 0.013*SL 0.402 + 0.010*SL 0.416 + 0.009*SL
D to QN tR 0.131 0.090 + 0.021*SL 0.097 + 0.019*SL 0.098 + 0.019*SL
tF 0.109 0.073 + 0.018*SL 0.079 + 0.017*SL 0.081 + 0.016*SL
tPLH 0.491 0.462 + 0.015*SL 0.476 + 0.011*SL 0.496 + 0.009*SL
tPHL 0.441 0.413 + 0.014*SL 0.426 + 0.011*SL 0.444 + 0.009*SL
GN to QN tR 0.132 0.091 + 0.020*SL 0.097 + 0.019*SL 0.099 + 0.019*SL
tF 0.110 0.074 + 0.018*SL 0.080 + 0.017*SL 0.081 + 0.016*SL
tPLH 0.610 0.581 + 0.015*SL 0.595 + 0.011*SL 0.615 + 0.009*SL
tPHL 0.530 0.502 + 0.014*SL 0.515 + 0.011*SL 0.533 + 0.009*SL
SN to QN tR 0.127 0.086 + 0.020*SL 0.093 + 0.019*SL 0.092 + 0.019*SL
tF 0.110 0.074 + 0.018*SL 0.079 + 0.017*SL 0.082 + 0.016*SL
tPLH 0.258 0.229 + 0.014*SL 0.243 + 0.011*SL 0.262 + 0.009*SL
tPHL 0.266 0.238 + 0.014*SL 0.251 + 0.011*SL 0.269 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-431 STDM110
LD8/LD8D2
D Latch with Active Low, Reset, Set, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Input Load (SL) Gate Count
LD8 LD8D2 LD8 LD8D2
D GN SN RN D GN SN RN
0.6 0.5 0.8 0.8 0.6 0.5 0.8 0.8 6.00 6.33
Parameter Symbol Value (ns)
LD8 LD8D2
Input Setup Time (D to GN) tSU 0.417 0.442
Input Hold Time (D to GN) tHD 0.000 0.000
Pulse Width Low (GN) tPWL 0.452 0.490
Pulse Width Low (SN) tPWL 0.721 0.741
Recovery Time (SN to GN) tRC 0.000 0.000
Removal Time (SN to GN) tRM 0.505 0.444
Pulse Width Low (RN) tPWL 0.417 0.487
Recovery Time (RN to GN) tRC 0.081 0.127
Removal Time (RN to GN) tRM 0.211 0.165
Recovery Time (SN to RN) tRC 0.325 0.393
Removal Time (SN to RN) tRM 0.000 0.000
D
GN
Q
QN
RN
SN
GLN
GN GNB
RN
RN
DGNB
GLN
QN
RN
GLN
GNB
Q
SN
SN
SN
Truth Table
DGNRNSNQ
(n+1) QN
(n+1)
001101
101110
x 1 1 1 Q (n) QN (n)
xx1010
xx0101
xx0010
STDM110 3-432 Samsung ASIC
LD8/LD8D2
D Latch with Active Low, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.147 0.076 + 0.035*SL 0.070 + 0.037*SL 0.063 + 0.038*SL
tF 0.134 0.072 + 0.031*SL 0.073 + 0.031*SL 0.067 + 0.032*SL
tPLH 0.739 0.701 + 0.019*SL 0.708 + 0.017*SL 0.711 + 0.017*SL
tPHL 0.756 0.715 + 0.021*SL 0.726 + 0.018*SL 0.732 + 0.017*SL
GN to Q tR 0.146 0.074 + 0.036*SL 0.070 + 0.037*SL 0.063 + 0.038*SL
tF 0.133 0.071 + 0.031*SL 0.071 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.791 0.753 + 0.019*SL 0.761 + 0.017*SL 0.763 + 0.017*SL
tPHL 0.741 0.700 + 0.020*SL 0.711 + 0.018*SL 0.718 + 0.017*SL
SN to Q tR 0.147 0.077 + 0.035*SL 0.070 + 0.037*SL 0.063 + 0.038*SL
tF 0.134 0.073 + 0.031*SL 0.072 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.366 0.328 + 0.019*SL 0.335 + 0.017*SL 0.338 + 0.017*SL
tPHL 0.372 0.331 + 0.020*SL 0.343 + 0.018*SL 0.349 + 0.017*SL
RN to Q tR 0.146 0.075 + 0.036*SL 0.068 + 0.037*SL 0.063 + 0.038*SL
tF 0.133 0.072 + 0.031*SL 0.071 + 0.031*SL 0.065 + 0.032*SL
tPLH 0.443 0.405 + 0.019*SL 0.413 + 0.017*SL 0.415 + 0.017*SL
tPHL 0.487 0.446 + 0.020*SL 0.457 + 0.018*SL 0.464 + 0.017*SL
D to QN tR 0.168 0.091 + 0.038*SL 0.094 + 0.038*SL 0.091 + 0.038*SL
tF 0.139 0.075 + 0.032*SL 0.078 + 0.031*SL 0.076 + 0.031*SL
tPLH 0.639 0.594 + 0.023*SL 0.607 + 0.019*SL 0.617 + 0.018*SL
tPHL 0.639 0.596 + 0.021*SL 0.608 + 0.019*SL 0.618 + 0.017*SL
GN to QN tR 0.168 0.092 + 0.038*SL 0.094 + 0.038*SL 0.090 + 0.038*SL
tF 0.140 0.075 + 0.032*SL 0.080 + 0.031*SL 0.077 + 0.031*SL
tPLH 0.625 0.580 + 0.022*SL 0.593 + 0.019*SL 0.602 + 0.018*SL
tPHL 0.691 0.648 + 0.021*SL 0.660 + 0.019*SL 0.670 + 0.017*SL
SN to QN tR 0.167 0.091 + 0.038*SL 0.094 + 0.038*SL 0.090 + 0.038*SL
tF 0.141 0.078 + 0.032*SL 0.080 + 0.031*SL 0.078 + 0.031*SL
tPLH 0.256 0.211 + 0.022*SL 0.224 + 0.019*SL 0.233 + 0.018*SL
tPHL 0.266 0.223 + 0.022*SL 0.236 + 0.019*SL 0.245 + 0.017*SL
RN to QN tR 0.168 0.092 + 0.038*SL 0.093 + 0.038*SL 0.090 + 0.038*SL
tF 0.139 0.075 + 0.032*SL 0.079 + 0.031*SL 0.076 + 0.031*SL
tPLH 0.371 0.326 + 0.023*SL 0.339 + 0.019*SL 0.348 + 0.018*SL
tPHL 0.343 0.300 + 0.021*SL 0.312 + 0.019*SL 0.322 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
ld Ti i R i
Samsung ASIC 3-433 STDM110
LD8/LD8D2
D Latch with Active Low, Reset, Set, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LD8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D to Q tR 0.110 0.075 + 0.018*SL 0.073 + 0.018*SL 0.066 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.078 + 0.016*SL 0.075 + 0.017*SL
tPLH 0.785 0.760 + 0.012*SL 0.771 + 0.010*SL 0.781 + 0.009*SL
tPHL 0.818 0.790 + 0.014*SL 0.804 + 0.011*SL 0.820 + 0.009*SL
GN to Q tR 0.111 0.074 + 0.018*SL 0.076 + 0.018*SL 0.065 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.079 + 0.016*SL 0.075 + 0.017*SL
tPLH 0.837 0.812 + 0.012*SL 0.823 + 0.010*SL 0.833 + 0.009*SL
tPHL 0.804 0.776 + 0.014*SL 0.789 + 0.011*SL 0.805 + 0.009*SL
SN to Q tR 0.111 0.074 + 0.018*SL 0.076 + 0.018*SL 0.065 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.079 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.415 0.390 + 0.012*SL 0.402 + 0.010*SL 0.412 + 0.009*SL
tPHL 0.434 0.407 + 0.014*SL 0.420 + 0.011*SL 0.436 + 0.009*SL
RN to Q tR 0.110 0.075 + 0.018*SL 0.074 + 0.018*SL 0.066 + 0.019*SL
tF 0.107 0.072 + 0.018*SL 0.078 + 0.016*SL 0.074 + 0.017*SL
tPLH 0.488 0.463 + 0.012*SL 0.474 + 0.010*SL 0.484 + 0.009*SL
tPHL 0.549 0.522 + 0.014*SL 0.535 + 0.011*SL 0.551 + 0.009*SL
D to QN tR 0.126 0.085 + 0.021*SL 0.092 + 0.019*SL 0.095 + 0.019*SL
tF 0.108 0.072 + 0.018*SL 0.078 + 0.016*SL 0.080 + 0.016*SL
tPLH 0.645 0.616 + 0.014*SL 0.630 + 0.011*SL 0.650 + 0.009*SL
tPHL 0.640 0.611 + 0.014*SL 0.625 + 0.011*SL 0.643 + 0.009*SL
GN to QN tR 0.127 0.086 + 0.020*SL 0.093 + 0.019*SL 0.094 + 0.019*SL
tF 0.107 0.072 + 0.018*SL 0.077 + 0.017*SL 0.081 + 0.016*SL
tPLH 0.630 0.601 + 0.014*SL 0.616 + 0.011*SL 0.635 + 0.009*SL
tPHL 0.692 0.663 + 0.014*SL 0.677 + 0.011*SL 0.695 + 0.009*SL
SN to QN tR 0.127 0.086 + 0.020*SL 0.093 + 0.019*SL 0.093 + 0.019*SL
tF 0.111 0.075 + 0.018*SL 0.081 + 0.016*SL 0.083 + 0.016*SL
tPLH 0.260 0.232 + 0.014*SL 0.246 + 0.011*SL 0.265 + 0.009*SL
tPHL 0.270 0.241 + 0.014*SL 0.255 + 0.011*SL 0.273 + 0.009*SL
RN to QN tR 0.126 0.085 + 0.021*SL 0.093 + 0.019*SL 0.094 + 0.019*SL
tF 0.107 0.071 + 0.018*SL 0.076 + 0.017*SL 0.080 + 0.016*SL
tPLH 0.376 0.347 + 0.014*SL 0.361 + 0.011*SL 0.381 + 0.009*SL
tPHL 0.344 0.315 + 0.014*SL 0.329 + 0.011*SL 0.347 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-434 Samsung ASIC
LS0/LS0D2
SR Latch with 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Timing Requirements (Typical process, 25°C, 2.5V, Unit = ns)
Input Load (SL) Gate Count
LS0 LS0D2 LS0 LS0D2
RN SN RN SN
1.1 1.1 2.2 2.2 1.67 3.00
Parameter Symbol Value (ns)
LS0 LS0D2
Pulse Width Low (SN) tPWL 0.314 0.275
Removal Time (SN to RN) tRM 0.047 0.089
Recovery Time (Sn to RN) tRC 0.231 0.191
Pulse Width Low (RN) tPWL 0.315 0.274
Q
QN
RN
SN
SN
QN
Q
RN
Truth Table
* Both Q and QN outputs will remain high during RN and
SN are low. However, if RN and SN go high
simultaneously, the output states are unpredictable.
RN SN Q (n+1) QN (n+1)
00**
1010
0101
1 1 Q (n) QN (n)
Samsung ASIC 3-435 STDM110
LS0/LS0D2
SR Latch with 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LS0
LS0D2
[y ypp , , , , ]
()
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
SN to Q tR 0.221 0.165 + 0.028*SL 0.171 + 0.027*SL 0.171 + 0.027*SL
tF 0.229 0.156 + 0.036*SL 0.149 + 0.038*SL 0.138 + 0.040*SL
tPLH 0.151 0.112 + 0.019*SL 0.119 + 0.017*SL 0.119 + 0.018*SL
tPHL 0.152 0.109 + 0.021*SL 0.115 + 0.020*SL 0.115 + 0.020*SL
RN to Q tF 0.203 0.124 + 0.039*SL 0.119 + 0.041*SL 0.118 + 0.041*SL
tPHL 0.241 0.199 + 0.021*SL 0.202 + 0.020*SL 0.204 + 0.020*SL
SN to QN tF 0.203 0.124 + 0.040*SL 0.119 + 0.041*SL 0.118 + 0.041*SL
tPHL 0.241 0.200 + 0.021*SL 0.202 + 0.020*SL 0.204 + 0.020*SL
RN to QN tR 0.221 0.165 + 0.028*SL 0.171 + 0.027*SL 0.171 + 0.027*SL
tF 0.229 0.157 + 0.036*SL 0.149 + 0.038*SL 0.139 + 0.040*SL
tPLH 0.151 0.112 + 0.019*SL 0.119 + 0.017*SL 0.119 + 0.018*SL
tPHL 0.152 0.109 + 0.021*SL 0.115 + 0.020*SL 0.115 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
[y ypp , , , , ]
()
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
SN to Q tR 0.191 0.162 + 0.015*SL 0.166 + 0.014*SL 0.170 + 0.013*SL
tF 0.191 0.155 + 0.018*SL 0.151 + 0.019*SL 0.139 + 0.020*SL
tPLH 0.129 0.107 + 0.011*SL 0.115 + 0.009*SL 0.118 + 0.009*SL
tPHL 0.129 0.104 + 0.012*SL 0.112 + 0.010*SL 0.114 + 0.010*SL
RN to Q tF 0.160 0.121 + 0.020*SL 0.119 + 0.020*SL 0.115 + 0.020*SL
tPHL 0.216 0.195 + 0.011*SL 0.197 + 0.010*SL 0.200 + 0.010*SL
SN to QN tF 0.160 0.121 + 0.020*SL 0.119 + 0.020*SL 0.114 + 0.020*SL
tPHL 0.217 0.195 + 0.011*SL 0.197 + 0.010*SL 0.200 + 0.010*SL
RN to QN tR 0.191 0.161 + 0.015*SL 0.166 + 0.014*SL 0.170 + 0.013*SL
tF 0.190 0.155 + 0.018*SL 0.151 + 0.019*SL 0.138 + 0.020*SL
tPLH 0.129 0.107 + 0.011*SL 0.115 + 0.009*SL 0.117 + 0.009*SL
tPHL 0.128 0.104 + 0.012*SL 0.112 + 0.010*SL 0.114 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-436 Samsung ASIC
LS1/LS1D2
SR Latch with Separate Inputs, 1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
LS1 LS1D2 LS1 LS1
D2
SN1 SN2 SN RN1 RN2 RN SN1 SN2 SN RN1 RN2 RN 3.00 5.001.0 1.0 1.1 1.0 1.0 1.1 1.0 1.0 1.1 1.0 1.0 1.1
Q
QN
SN1
RN1
RN2
SN2
SN
RN
RN1
Q
QN
RN
RN2
SN1
SN
SN2
Truth Table
RN* = RN1 + RN2, SN* = SN1 + SN2
* Both Q and QN outputs will be unknown when RN
(RN*) and SN (SN*) are low.
RN SN RN* SN* Q
(n+1) QN
(n+1)
00xx**
x00x**
xx00**
0xx0**
101x10
01x101
1x1010
x10101
1111Q (n)QN (n)
Samsung ASIC 3-437 STDM110
LS1/LS1D2
SR Latch with Separate Inputs, 1X/2X Drive
Timing Requirements (Typical process, 25°C, 1.8V, Unit = ns)
Parameter Symbol Value (ns)
LS1 LS1D2
Pulse Width Low (SN1) tPWL 0.551 0.463
Removal Time (SN1 to RN1) tRM 0.008 0.135
Recovery Time (SN1 to RN1) tRC 0.271 0.145
Removal Time (SN1 to RN2) tRM 0.043 0.167
Recovery Time (SN1 to RN2) tRC 0.237 0.112
Removal Time (SN1 to RN) tRM 0.032 0.152
Recovery Time (SN1 to RN) tRC 0.245 0.128
Pulse Width Low (SN2) tPWL 0.557 0.464
Removal Time (SN2 to RN1) tRM 0.000 0.103
Recovery Time (SN2 to RN1) tRC 0.300 0.177
Removal Time (SN2 to RN2) tRM 0.014 0.136
Recovery Time (SN2 to RN2) tRC 0.265 0.144
Removal Time (SN2 to RN) tRM 0.007 0.121
Recovery Time (SN2 to RN) tRC 0.274 0.159
Pulse Width Low (SN) tPWL 0.404 0.356
Removal Time (SN to RN1) tRM 0.000 0.000
Recovery Time (SN to RN1) tRC 0.293 0.168
Removal Time (SN to RN2) tRM 0.028 0.148
Recovery Time (SN to RN2) tRC 0.257 0.138
Removal Time (SN to RN) tRM 0.019 0.133
Recovery Time (SN to RN) tRC 0.264 0.153
Pulse Width Low (RN1) tPWL 0.551 0.461
Pulse Width Low (RN2) tPWL 0.557 0.462
Pulse Width Low (RN) tPWL 0.404 0.357
STDM110 3-438 Samsung ASIC
LS1/LS1D2
SR Latch with Separate Inputs, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LS1
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
SN1 to Q tR 0.412 0.309 + 0.051*SL 0.317 + 0.049*SL 0.322 + 0.049*SL
tF 0.413 0.273 + 0.070*SL 0.265 + 0.072*SL 0.255 + 0.073*SL
tPLH 0.247 0.176 + 0.035*SL 0.176 + 0.035*SL 0.177 + 0.035*SL
tPHL 0.241 0.171 + 0.035*SL 0.171 + 0.035*SL 0.172 + 0.035*SL
SN2 to Q tR 0.422 0.308 + 0.057*SL 0.328 + 0.052*SL 0.345 + 0.049*SL
tF 0.459 0.318 + 0.070*SL 0.312 + 0.072*SL 0.302 + 0.073*SL
tPLH 0.258 0.186 + 0.036*SL 0.187 + 0.036*SL 0.188 + 0.035*SL
tPHL 0.275 0.204 + 0.035*SL 0.205 + 0.035*SL 0.207 + 0.035*SL
SN to Q tR 0.270 0.203 + 0.034*SL 0.217 + 0.030*SL 0.229 + 0.029*SL
tF 0.410 0.268 + 0.071*SL 0.264 + 0.072*SL 0.257 + 0.073*SL
tPLH 0.180 0.145 + 0.018*SL 0.146 + 0.018*SL 0.146 + 0.017*SL
tPHL 0.263 0.192 + 0.036*SL 0.193 + 0.035*SL 0.194 + 0.035*SL
RN1 to Q tF 0.417 0.273 + 0.072*SL 0.270 + 0.073*SL 0.267 + 0.073*SL
tPHL 0.444 0.370 + 0.037*SL 0.375 + 0.036*SL 0.379 + 0.035*SL
RN2 to Q tF 0.462 0.318 + 0.072*SL 0.316 + 0.072*SL 0.312 + 0.073*SL
tPHL 0.496 0.422 + 0.037*SL 0.427 + 0.036*SL 0.431 + 0.035*SL
RN to Q tF 0.405 0.260 + 0.072*SL 0.258 + 0.073*SL 0.256 + 0.073*SL
tPHL 0.398 0.326 + 0.036*SL 0.329 + 0.035*SL 0.331 + 0.035*SL
SN1 to QN tF 0.417 0.273 + 0.072*SL 0.270 + 0.073*SL 0.267 + 0.073*SL
tPHL 0.444 0.370 + 0.037*SL 0.375 + 0.036*SL 0.379 + 0.035*SL
SN2 to QN tF 0.462 0.319 + 0.072*SL 0.316 + 0.072*SL 0.313 + 0.073*SL
tPHL 0.496 0.422 + 0.037*SL 0.426 + 0.036*SL 0.431 + 0.035*SL
SN to QN tF 0.406 0.261 + 0.073*SL 0.258 + 0.073*SL 0.256 + 0.073*SL
tPHL 0.398 0.326 + 0.036*SL 0.329 + 0.035*SL 0.331 + 0.035*SL
RN1 to QN tR 0.412 0.309 + 0.051*SL 0.317 + 0.049*SL 0.322 + 0.049*SL
tF 0.413 0.273 + 0.070*SL 0.266 + 0.072*SL 0.255 + 0.073*SL
tPLH 0.247 0.176 + 0.035*SL 0.176 + 0.035*SL 0.177 + 0.035*SL
tPHL 0.242 0.171 + 0.035*SL 0.172 + 0.035*SL 0.173 + 0.035*SL
RN2 to QN tR 0.422 0.309 + 0.057*SL 0.328 + 0.052*SL 0.345 + 0.049*SL
tF 0.459 0.319 + 0.070*SL 0.312 + 0.072*SL 0.303 + 0.073*SL
tPLH 0.258 0.186 + 0.036*SL 0.188 + 0.036*SL 0.189 + 0.035*SL
tPHL 0.275 0.204 + 0.035*SL 0.206 + 0.035*SL 0.207 + 0.035*SL
RN to QN tR 0.270 0.203 + 0.034*SL 0.217 + 0.030*SL 0.229 + 0.029*SL
tF 0.411 0.268 + 0.071*SL 0.264 + 0.072*SL 0.257 + 0.073*SL
tPLH 0.180 0.145 + 0.018*SL 0.146 + 0.018*SL 0.147 + 0.017*SL
tPHL 0.263 0.192 + 0.036*SL 0.193 + 0.035*SL 0.195 + 0.035*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-439 STDM110
LS1/LS1D2
1SR Latch with Separate Inputs, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
LS1D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
SN1 to Q tR 0.114 0.077 + 0.018*SL 0.077 + 0.018*SL 0.068 + 0.019*SL
tF 0.107 0.072 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.431 0.407 + 0.012*SL 0.418 + 0.010*SL 0.427 + 0.009*SL
tPHL 0.446 0.419 + 0.014*SL 0.432 + 0.010*SL 0.446 + 0.009*SL
SN2 to Q tR 0.113 0.076 + 0.018*SL 0.077 + 0.018*SL 0.067 + 0.019*SL
tF 0.108 0.073 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.441 0.417 + 0.012*SL 0.428 + 0.010*SL 0.437 + 0.009*SL
tPHL 0.486 0.459 + 0.014*SL 0.472 + 0.010*SL 0.486 + 0.009*SL
SN to Q tR 0.106 0.070 + 0.018*SL 0.068 + 0.019*SL 0.062 + 0.019*SL
tF 0.107 0.072 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.351 0.327 + 0.012*SL 0.337 + 0.009*SL 0.345 + 0.009*SL
tPHL 0.467 0.440 + 0.014*SL 0.453 + 0.010*SL 0.467 + 0.009*SL
RN1 to Q tF 0.106 0.071 + 0.018*SL 0.076 + 0.016*SL 0.072 + 0.017*SL
tPHL 0.686 0.658 + 0.014*SL 0.671 + 0.011*SL 0.686 + 0.009*SL
RN2 to Q tF 0.108 0.073 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPHL 0.745 0.717 + 0.014*SL 0.730 + 0.011*SL 0.745 + 0.009*SL
RN to Q tF 0.107 0.072 + 0.017*SL 0.076 + 0.016*SL 0.072 + 0.017*SL
tPHL 0.622 0.594 + 0.014*SL 0.607 + 0.010*SL 0.622 + 0.009*SL
SN1 to QN tF 0.107 0.071 + 0.018*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPHL 0.686 0.658 + 0.014*SL 0.671 + 0.011*SL 0.686 + 0.009*SL
SN2 to QN tF 0.108 0.074 + 0.017*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPHL 0.746 0.719 + 0.014*SL 0.732 + 0.011*SL 0.747 + 0.009*SL
SN to QN tF 0.106 0.070 + 0.018*SL 0.077 + 0.016*SL 0.072 + 0.017*SL
tPHL 0.621 0.593 + 0.014*SL 0.606 + 0.011*SL 0.621 + 0.009*SL
RN1 to QN tR 0.113 0.078 + 0.018*SL 0.076 + 0.018*SL 0.068 + 0.019*SL
tF 0.106 0.071 + 0.018*SL 0.076 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.426 0.401 + 0.012*SL 0.413 + 0.010*SL 0.422 + 0.009*SL
tPHL 0.442 0.414 + 0.014*SL 0.427 + 0.010*SL 0.442 + 0.009*SL
RN2 to QN tR 0.113 0.077 + 0.018*SL 0.076 + 0.018*SL 0.067 + 0.019*SL
tF 0.107 0.072 + 0.018*SL 0.077 + 0.016*SL 0.073 + 0.017*SL
tPLH 0.437 0.412 + 0.012*SL 0.423 + 0.010*SL 0.432 + 0.009*SL
tPHL 0.482 0.455 + 0.014*SL 0.468 + 0.011*SL 0.482 + 0.009*SL
RN to QN tR 0.105 0.070 + 0.018*SL 0.066 + 0.019*SL 0.062 + 0.019*SL
tF 0.106 0.070 + 0.018*SL 0.077 + 0.016*SL 0.072 + 0.017*SL
tPLH 0.347 0.324 + 0.012*SL 0.333 + 0.010*SL 0.341 + 0.009*SL
tPHL 0.460 0.433 + 0.014*SL 0.445 + 0.010*SL 0.460 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-442 STDM110
BUSHOLDER
Cell List
Logic Symbol
Cell Name Function Description
BUSHOLDER Bus Holder
Y
Cell Data
Input Load (SL) Gate Count
Y1.339.5
STDM110 3-443 Samsung ASIC
INTERNAL CLOCK DRIVERS
Cell List
Logic Symbol
Cell Data
Cell Name Function Description
CK2 Internal Clock Driver CMOS 2mA
CK4 Internal Clock Driver CMOS 4mA
CK6 Internal Clock Driver CMOS 6mA
CK8 Internal Clock Driver CMOS 8mA
Standard Load (SL) I/O Slot
CK2 CK4 CK6 CK8 CK2 CK4 CK6 CK8
AAAA
16.001 15.857 30.343 30.203 1.0 1.0 1.0 1.0
AY
Truth Table
AY
00
11
STDM110 3-444 Samsung ASIC
CK2/CK4/CK6/CK8
Internal Clock Driver CMOS 2/4/6/8mA
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.19ns, SL: Standard Load)
CK2
CK4
CK6
CK8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.084 0.079 + 0.002*SL 0.075 + 0.002*SL 0.075 + 0.002*SL
tF 0.076 0.071 + 0.002*SL 0.065 + 0.002*SL 0.062 + 0.002*SL
tPLH 0.196 0.194 + 0.001*SL 0.194 + 0.001*SL 0.195 + 0.001*SL
tPHL 0.250 0.247 + 0.001*SL 0.249 + 0.001*SL 0.249 + 0.001*SL
*Group1 : SL < 642, *Group2 : 642 SL
< <
= = 963, *Group3 : 963 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.093 0.091 + 0.001*SL 0.083 + 0.001*SL 0.080 + 0.001*SL
tF 0.094 0.091 + 0.001*SL 0.081 + 0.001*SL 0.075 + 0.001*SL
tPLH 0.252 0.251 + 0.001*SL 0.252 + 0.001*SL 0.252 + 0.001*SL
tPHL 0.336 0.335 + 0.001*SL 0.337 + 0.001*SL 0.338 + 0.001*SL
*Group1 : SL < 1282, *Group2 : 1282 SL
< <
= = 1923, *Group3 : 1923 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.090 0.088 + 0.001*SL 0.080 + 0.001*SL 0.078 + 0.001*SL
tF 0.084 0.082 + 0.001*SL 0.075 + 0.001*SL 0.072 + 0.001*SL
tPLH 0.245 0.244 + 0.000*SL 0.244 + 0.000*SL 0.245 + 0.000*SL
tPHL 0.292 0.291 + 0.000*SL 0.292 + 0.000*SL 0.293 + 0.000*SL
*Group1 : SL < 1924, *Group2 : 1924 SL
< <
= = 2886, *Group3 : 2886 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to Y tR 0.100 0.099 + 0.001*SL 0.088 + 0.001*SL 0.083 + 0.001*SL
tF 0.092 0.091 + 0.001*SL 0.080 + 0.001*SL 0.076 + 0.001*SL
tPLH 0.283 0.282 + 0.000*SL 0.283 + 0.000*SL 0.284 + 0.000*SL
tPHL 0.333 0.332 + 0.000*SL 0.334 + 0.000*SL 0.335 + 0.000*SL
*Group1 : SL < 2562, *Group2 : 2562 SL
< <
= = 3843, *Group3 : 3843 < SL
Samsung ASIC 3-445 STDM110
DECODERS
Cell List
Cell Name Function Description
DC4 2 > 4 Non-Inverting Decoder
DC4I 2 > 4 Inverting Decoder
DC8I 3 > 8 Inverting Decoder
STDM110 3-446 Samsung ASIC
DC4
2 > 4 Non-Inverting Decoder
Logic Symbol
Schematic Diagram
S0
S1
Y0
Y1
Y2
Y3
Y0
Y1
Y2
Y3
S0
S1
Truth Table
Cell Data
S1 S0 Y0 Y1 Y2 Y3
001000
010100
100010
110001
Input Load (SL) Gate Count
S0 S1 6.332.5 2.4
Samsung ASIC 3-447 STDM110
DC4
2 > 4 Non-Inverting Decoder
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DC4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
S0 to Y0 tR 0.154 0.081 + 0.037*SL 0.076 + 0.038*SL 0.071 + 0.038*SL
tF 0.132 0.067 + 0.033*SL 0.065 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.335 0.294 + 0.021*SL 0.304 + 0.018*SL 0.309 + 0.018*SL
tPHL 0.314 0.273 + 0.021*SL 0.282 + 0.018*SL 0.287 + 0.018*SL
S1 to Y0 tR 0.154 0.080 + 0.037*SL 0.076 + 0.038*SL 0.071 + 0.038*SL
tF 0.134 0.070 + 0.032*SL 0.066 + 0.033*SL 0.062 + 0.034*SL
tPLH 0.339 0.298 + 0.021*SL 0.308 + 0.018*SL 0.313 + 0.018*SL
tPHL 0.336 0.294 + 0.021*SL 0.304 + 0.018*SL 0.309 + 0.018*SL
S0 to Y1 tR 0.152 0.078 + 0.037*SL 0.075 + 0.038*SL 0.071 + 0.039*SL
tF 0.132 0.067 + 0.033*SL 0.064 + 0.033*SL 0.061 + 0.034*SL
tPLH 0.211 0.170 + 0.020*SL 0.179 + 0.018*SL 0.183 + 0.018*SL
tPHL 0.220 0.179 + 0.020*SL 0.187 + 0.018*SL 0.192 + 0.018*SL
S1 to Y1 tR 0.151 0.077 + 0.037*SL 0.074 + 0.038*SL 0.068 + 0.039*SL
tF 0.132 0.068 + 0.032*SL 0.064 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.331 0.291 + 0.020*SL 0.300 + 0.018*SL 0.304 + 0.018*SL
tPHL 0.329 0.288 + 0.020*SL 0.297 + 0.018*SL 0.301 + 0.018*SL
S0 to Y2 tR 0.153 0.079 + 0.037*SL 0.078 + 0.038*SL 0.070 + 0.039*SL
tF 0.132 0.067 + 0.033*SL 0.066 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.335 0.293 + 0.021*SL 0.304 + 0.018*SL 0.308 + 0.018*SL
tPHL 0.314 0.273 + 0.021*SL 0.282 + 0.018*SL 0.287 + 0.018*SL
S1 to Y2 tR 0.155 0.082 + 0.037*SL 0.078 + 0.038*SL 0.072 + 0.038*SL
tF 0.134 0.068 + 0.033*SL 0.070 + 0.033*SL 0.063 + 0.034*SL
tPLH 0.216 0.175 + 0.021*SL 0.185 + 0.018*SL 0.190 + 0.018*SL
tPHL 0.245 0.203 + 0.021*SL 0.213 + 0.018*SL 0.218 + 0.018*SL
S0 to Y3 tR 0.155 0.080 + 0.037*SL 0.078 + 0.038*SL 0.073 + 0.039*SL
tF 0.129 0.067 + 0.031*SL 0.066 + 0.031*SL 0.063 + 0.032*SL
tPLH 0.216 0.175 + 0.020*SL 0.184 + 0.018*SL 0.189 + 0.018*SL
tPHL 0.220 0.181 + 0.020*SL 0.190 + 0.018*SL 0.195 + 0.017*SL
S1 to Y3 tR 0.155 0.082 + 0.037*SL 0.077 + 0.038*SL 0.072 + 0.039*SL
tF 0.130 0.068 + 0.031*SL 0.068 + 0.031*SL 0.063 + 0.032*SL
tPLH 0.209 0.169 + 0.020*SL 0.178 + 0.018*SL 0.182 + 0.018*SL
tPHL 0.236 0.197 + 0.020*SL 0.206 + 0.018*SL 0.211 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-448 Samsung ASIC
DC4I
2 > 4 Inverting Decoder
Logic Symbol
Schematic Diagram
S0
S1
YN0
YN1
YN2
YN3
YN0
YN1
YN2
YN3
S0
S1
Truth Table
Cell Data
S1 S0 YN0 YN1 YN2 YN3
000111
011011
101101
111110
Input Load (SL) Gate Count
S0 S1 4.002.9 3.1
Samsung ASIC 3-449 STDM110
DC4I
2 > 4 Inverting Decoder
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DC4I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
S0 to YN0 tR 0.161 0.088 + 0.037*SL 0.084 + 0.038*SL 0.077 + 0.038*SL
tF 0.178 0.097 + 0.040*SL 0.096 + 0.041*SL 0.090 + 0.042*SL
tPLH 0.238 0.198 + 0.020*SL 0.206 + 0.018*SL 0.210 + 0.017*SL
tPHL 0.269 0.222 + 0.024*SL 0.231 + 0.021*SL 0.236 + 0.021*SL
S1 to YN0 tR 0.176 0.102 + 0.037*SL 0.099 + 0.038*SL 0.093 + 0.039*SL
tF 0.172 0.092 + 0.040*SL 0.088 + 0.041*SL 0.084 + 0.042*SL
tPLH 0.253 0.214 + 0.019*SL 0.220 + 0.018*SL 0.222 + 0.018*SL
tPHL 0.271 0.225 + 0.023*SL 0.232 + 0.021*SL 0.236 + 0.021*SL
S0 to YN1 tR 0.180 0.114 + 0.033*SL 0.101 + 0.036*SL 0.090 + 0.038*SL
tF 0.190 0.116 + 0.037*SL 0.109 + 0.039*SL 0.093 + 0.041*SL
tPLH 0.125 0.082 + 0.021*SL 0.099 + 0.017*SL 0.099 + 0.017*SL
tPHL 0.127 0.079 + 0.024*SL 0.094 + 0.020*SL 0.092 + 0.020*SL
S1 to YN1 tR 0.177 0.102 + 0.037*SL 0.100 + 0.038*SL 0.094 + 0.039*SL
tF 0.172 0.092 + 0.040*SL 0.088 + 0.041*SL 0.083 + 0.042*SL
tPLH 0.254 0.216 + 0.019*SL 0.221 + 0.018*SL 0.224 + 0.017*SL
tPHL 0.271 0.226 + 0.023*SL 0.232 + 0.021*SL 0.236 + 0.021*SL
S0 to YN2 tR 0.162 0.088 + 0.037*SL 0.085 + 0.038*SL 0.078 + 0.039*SL
tF 0.179 0.098 + 0.040*SL 0.096 + 0.041*SL 0.090 + 0.041*SL
tPLH 0.241 0.201 + 0.020*SL 0.209 + 0.018*SL 0.213 + 0.018*SL
tPHL 0.272 0.225 + 0.024*SL 0.234 + 0.021*SL 0.239 + 0.021*SL
S1 to YN2 tR 0.196 0.129 + 0.033*SL 0.119 + 0.036*SL 0.108 + 0.037*SL
tF 0.179 0.105 + 0.037*SL 0.095 + 0.039*SL 0.082 + 0.041*SL
tPLH 0.140 0.100 + 0.020*SL 0.111 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.125 0.077 + 0.024*SL 0.093 + 0.020*SL 0.093 + 0.020*SL
S0 to YN3 tR 0.180 0.113 + 0.033*SL 0.103 + 0.036*SL 0.092 + 0.037*SL
tF 0.190 0.117 + 0.037*SL 0.106 + 0.039*SL 0.094 + 0.041*SL
tPLH 0.126 0.084 + 0.021*SL 0.100 + 0.017*SL 0.100 + 0.017*SL
tPHL 0.129 0.081 + 0.024*SL 0.095 + 0.020*SL 0.095 + 0.021*SL
S1 to YN3 tR 0.196 0.128 + 0.034*SL 0.119 + 0.036*SL 0.108 + 0.038*SL
tF 0.178 0.102 + 0.038*SL 0.093 + 0.040*SL 0.084 + 0.041*SL
tPLH 0.142 0.103 + 0.020*SL 0.113 + 0.017*SL 0.112 + 0.017*SL
tPHL 0.124 0.077 + 0.023*SL 0.088 + 0.021*SL 0.089 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-450 Samsung ASIC
DC8I
3 > 8 Inverting Decoder
Logic Symbol
Schematic Diagram
S0
S2
YN0
YN2
YN4
YN6
S1
YN1
YN3
YN5
YN7
YN0
YN1
YN2
YN3
S2
S0
YN4
YN5
YN6
YN7
S1
Truth Table
Cell Data
S2 S1 S0 YN0 YN1 YN2 YN3 YN4 YN5 YN6 YN7
00001111111
00110111111
01011011111
01111101111
10011110111
10111111011
11011111101
11111111110
Input Load (SL) Gate Count
S0 S1 S2 10.675.1 5.1 5.2
Samsung ASIC 3-451 STDM110
DC8I
3 > 8 Inverting Decoder
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DC8I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
S0 to YN0 tR 0.237 0.134 + 0.052*SL 0.131 + 0.053*SL 0.123 + 0.054*SL
tF 0.263 0.150 + 0.057*SL 0.146 + 0.058*SL 0.138 + 0.059*SL
tPLH 0.323 0.269 + 0.027*SL 0.278 + 0.025*SL 0.283 + 0.024*SL
tPHL 0.325 0.265 + 0.030*SL 0.272 + 0.028*SL 0.274 + 0.028*SL
S1 to YN0 tR 0.250 0.154 + 0.048*SL 0.149 + 0.049*SL 0.142 + 0.050*SL
tF 0.261 0.147 + 0.057*SL 0.142 + 0.058*SL 0.138 + 0.059*SL
tPLH 0.350 0.300 + 0.025*SL 0.307 + 0.023*SL 0.311 + 0.023*SL
tPHL 0.339 0.278 + 0.030*SL 0.284 + 0.029*SL 0.288 + 0.028*SL
S2 to YN0 tR 0.284 0.181 + 0.051*SL 0.175 + 0.053*SL 0.168 + 0.054*SL
tF 0.255 0.139 + 0.058*SL 0.136 + 0.059*SL 0.133 + 0.059*SL
tPLH 0.363 0.311 + 0.026*SL 0.317 + 0.025*SL 0.319 + 0.024*SL
tPHL 0.332 0.272 + 0.030*SL 0.277 + 0.029*SL 0.280 + 0.028*SL
S0 to YN1 tR 0.230 0.139 + 0.046*SL 0.128 + 0.048*SL 0.114 + 0.050*SL
tF 0.267 0.159 + 0.054*SL 0.149 + 0.057*SL 0.136 + 0.058*SL
tPLH 0.160 0.111 + 0.024*SL 0.117 + 0.023*SL 0.117 + 0.023*SL
tPHL 0.164 0.106 + 0.029*SL 0.110 + 0.028*SL 0.109 + 0.028*SL
S1 to YN1 tR 0.261 0.159 + 0.051*SL 0.155 + 0.052*SL 0.149 + 0.053*SL
tF 0.261 0.147 + 0.057*SL 0.144 + 0.058*SL 0.138 + 0.059*SL
tPLH 0.357 0.304 + 0.026*SL 0.312 + 0.024*SL 0.315 + 0.024*SL
tPHL 0.339 0.278 + 0.030*SL 0.284 + 0.029*SL 0.288 + 0.028*SL
S2 to YN1 tR 0.271 0.174 + 0.048*SL 0.169 + 0.050*SL 0.163 + 0.050*SL
tF 0.255 0.140 + 0.058*SL 0.136 + 0.059*SL 0.133 + 0.059*SL
tPLH 0.355 0.306 + 0.025*SL 0.312 + 0.023*SL 0.315 + 0.023*SL
tPHL 0.333 0.273 + 0.030*SL 0.278 + 0.029*SL 0.280 + 0.028*SL
S0 to YN2 tR 0.238 0.137 + 0.051*SL 0.133 + 0.052*SL 0.126 + 0.053*SL
tF 0.269 0.155 + 0.057*SL 0.151 + 0.058*SL 0.145 + 0.059*SL
tPLH 0.324 0.270 + 0.027*SL 0.279 + 0.024*SL 0.284 + 0.024*SL
tPHL 0.329 0.268 + 0.030*SL 0.275 + 0.029*SL 0.278 + 0.028*SL
S1 to YN2 tR 0.256 0.161 + 0.047*SL 0.153 + 0.049*SL 0.140 + 0.051*SL
tF 0.267 0.158 + 0.055*SL 0.149 + 0.057*SL 0.138 + 0.058*SL
tPLH 0.186 0.138 + 0.024*SL 0.140 + 0.023*SL 0.142 + 0.023*SL
tPHL 0.178 0.119 + 0.030*SL 0.125 + 0.028*SL 0.126 + 0.028*SL
S2 to YN2 tR 0.281 0.182 + 0.050*SL 0.176 + 0.051*SL 0.168 + 0.052*SL
tF 0.259 0.143 + 0.058*SL 0.139 + 0.059*SL 0.137 + 0.059*SL
tPLH 0.362 0.311 + 0.025*SL 0.316 + 0.024*SL 0.319 + 0.024*SL
tPHL 0.335 0.275 + 0.030*SL 0.280 + 0.029*SL 0.282 + 0.028*SL
S0 to YN3 tR 0.231 0.139 + 0.046*SL 0.128 + 0.048*SL 0.115 + 0.050*SL
tF 0.270 0.161 + 0.054*SL 0.151 + 0.057*SL 0.138 + 0.058*SL
tPLH 0.160 0.112 + 0.024*SL 0.118 + 0.023*SL 0.118 + 0.023*SL
tPHL 0.165 0.107 + 0.029*SL 0.111 + 0.028*SL 0.110 + 0.028*SL
STDM110 3-452 Samsung ASIC
DC8I
3 > 8 Inverting Decoder
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DC8I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
S1 to YN3 tR 0.254 0.158 + 0.048*SL 0.150 + 0.050*SL 0.138 + 0.052*SL
tF 0.263 0.152 + 0.056*SL 0.144 + 0.058*SL 0.136 + 0.059*SL
tPLH 0.186 0.139 + 0.024*SL 0.140 + 0.023*SL 0.140 + 0.023*SL
tPHL 0.176 0.117 + 0.029*SL 0.121 + 0.028*SL 0.122 + 0.028*SL
S2 to YN3 tR 0.277 0.179 + 0.049*SL 0.173 + 0.050*SL 0.166 + 0.051*SL
tF 0.257 0.141 + 0.058*SL 0.138 + 0.058*SL 0.135 + 0.059*SL
tPLH 0.361 0.311 + 0.025*SL 0.316 + 0.024*SL 0.319 + 0.023*SL
tPHL 0.335 0.275 + 0.030*SL 0.280 + 0.029*SL 0.283 + 0.028*SL
S0 to YN4 tR 0.238 0.135 + 0.052*SL 0.131 + 0.053*SL 0.123 + 0.054*SL
tF 0.264 0.150 + 0.057*SL 0.147 + 0.058*SL 0.139 + 0.059*SL
tPLH 0.323 0.269 + 0.027*SL 0.278 + 0.025*SL 0.283 + 0.024*SL
tPHL 0.326 0.265 + 0.030*SL 0.272 + 0.028*SL 0.274 + 0.028*SL
S1 to YN4 tR 0.251 0.154 + 0.048*SL 0.150 + 0.049*SL 0.143 + 0.050*SL
tF 0.262 0.148 + 0.057*SL 0.144 + 0.058*SL 0.139 + 0.059*SL
tPLH 0.350 0.299 + 0.025*SL 0.306 + 0.023*SL 0.311 + 0.023*SL
tPHL 0.340 0.279 + 0.031*SL 0.285 + 0.029*SL 0.289 + 0.028*SL
S2 to YN4 tR 0.286 0.186 + 0.050*SL 0.177 + 0.052*SL 0.166 + 0.054*SL
tF 0.257 0.146 + 0.056*SL 0.138 + 0.058*SL 0.130 + 0.059*SL
tPLH 0.199 0.149 + 0.025*SL 0.151 + 0.024*SL 0.154 + 0.024*SL
tPHL 0.172 0.113 + 0.030*SL 0.120 + 0.028*SL 0.122 + 0.028*SL
S0 to YN5 tR 0.229 0.138 + 0.046*SL 0.127 + 0.048*SL 0.113 + 0.050*SL
tF 0.266 0.158 + 0.054*SL 0.148 + 0.057*SL 0.135 + 0.058*SL
tPLH 0.160 0.111 + 0.024*SL 0.118 + 0.023*SL 0.118 + 0.023*SL
tPHL 0.165 0.107 + 0.029*SL 0.110 + 0.028*SL 0.109 + 0.028*SL
S1 to YN5 tR 0.264 0.161 + 0.052*SL 0.157 + 0.053*SL 0.149 + 0.054*SL
tF 0.262 0.147 + 0.057*SL 0.144 + 0.058*SL 0.139 + 0.059*SL
tPLH 0.357 0.304 + 0.027*SL 0.311 + 0.025*SL 0.315 + 0.024*SL
tPHL 0.338 0.278 + 0.030*SL 0.284 + 0.029*SL 0.287 + 0.028*SL
S2 to YN5 tR 0.273 0.180 + 0.046*SL 0.172 + 0.048*SL 0.160 + 0.050*SL
tF 0.257 0.144 + 0.056*SL 0.137 + 0.058*SL 0.131 + 0.059*SL
tPLH 0.191 0.144 + 0.023*SL 0.146 + 0.023*SL 0.148 + 0.023*SL
tPHL 0.171 0.112 + 0.029*SL 0.117 + 0.028*SL 0.119 + 0.028*SL
S0 to YN6 tR 0.238 0.136 + 0.051*SL 0.132 + 0.052*SL 0.125 + 0.053*SL
tF 0.267 0.154 + 0.057*SL 0.150 + 0.058*SL 0.144 + 0.059*SL
tPLH 0.323 0.270 + 0.027*SL 0.279 + 0.024*SL 0.283 + 0.024*SL
tPHL 0.328 0.268 + 0.030*SL 0.274 + 0.029*SL 0.277 + 0.028*SL
S1 to YN6 tR 0.255 0.160 + 0.047*SL 0.153 + 0.049*SL 0.140 + 0.051*SL
tF 0.266 0.156 + 0.055*SL 0.147 + 0.057*SL 0.137 + 0.058*SL
tPLH 0.181 0.133 + 0.024*SL 0.134 + 0.023*SL 0.137 + 0.023*SL
tPHL 0.173 0.113 + 0.030*SL 0.120 + 0.028*SL 0.121 + 0.028*SL
Samsung ASIC 3-453 STDM110
DC8I
3 > 8 Inverting Decoder
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
DC8I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
S2 to YN6 tR 0.281 0.185 + 0.048*SL 0.176 + 0.050*SL 0.164 + 0.052*SL
tF 0.258 0.146 + 0.056*SL 0.139 + 0.058*SL 0.132 + 0.059*SL
tPLH 0.196 0.148 + 0.024*SL 0.150 + 0.024*SL 0.151 + 0.023*SL
tPHL 0.173 0.114 + 0.029*SL 0.120 + 0.028*SL 0.121 + 0.028*SL
S0 to YN7 tR 0.231 0.139 + 0.046*SL 0.128 + 0.048*SL 0.115 + 0.050*SL
tF 0.270 0.161 + 0.054*SL 0.152 + 0.057*SL 0.139 + 0.058*SL
tPLH 0.160 0.112 + 0.024*SL 0.118 + 0.023*SL 0.118 + 0.023*SL
tPHL 0.166 0.107 + 0.029*SL 0.111 + 0.028*SL 0.111 + 0.028*SL
S1 to YN7 tR 0.256 0.158 + 0.049*SL 0.150 + 0.051*SL 0.139 + 0.052*SL
tF 0.261 0.150 + 0.056*SL 0.142 + 0.058*SL 0.134 + 0.059*SL
tPLH 0.183 0.135 + 0.024*SL 0.136 + 0.024*SL 0.136 + 0.024*SL
tPHL 0.170 0.112 + 0.029*SL 0.116 + 0.028*SL 0.116 + 0.028*SL
S2 to YN7 tR 0.275 0.181 + 0.047*SL 0.173 + 0.049*SL 0.161 + 0.050*SL
tF 0.257 0.143 + 0.057*SL 0.137 + 0.058*SL 0.132 + 0.059*SL
tPLH 0.193 0.146 + 0.023*SL 0.148 + 0.023*SL 0.149 + 0.023*SL
tPHL 0.172 0.113 + 0.029*SL 0.117 + 0.028*SL 0.118 + 0.028*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-454 Samsung ASIC
ADDERS
Cell List
Cell Name Function Description
FADH Full Adder with 0.5X Drive
FA Full Adder with 1X Drive
FAD2 Full Adder with 2X Drive
HADH Half Adder with 0.5x Drive
HA Half Adder with 1x Drive
HAD2 Half Adder with 2X Drive
SCG23 Full Adder with one inverted input, 1X Drive
SCG23D2 Full Adder with one inverted input, 2X Drive
Samsung ASIC 3-455 STDM110
FADH/FA/FAD2
Full Adder with 0.5X/1X/2X Drive
Logic Symbol
Cell Data
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FADH
Input Load (SL) Gate Count
FADH FA FAD2 FADH FA FAD2
CI A B CI A B CI A B
0.8 0.8 0.5 1.0 1.0 0.5 1.0 1.0 0.5 6.00 6.33 6.67
CI
A
B
S
CO
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.291 0.123 + 0.084*SL 0.115 + 0.086*SL 0.104 + 0.088*SL
tF 0.243 0.113 + 0.065*SL 0.123 + 0.063*SL 0.119 + 0.063*SL
tPLH 0.649 0.560 + 0.044*SL 0.576 + 0.040*SL 0.582 + 0.040*SL
tPHL 0.663 0.578 + 0.043*SL 0.602 + 0.036*SL 0.620 + 0.034*SL
B to S tR 0.295 0.126 + 0.084*SL 0.119 + 0.086*SL 0.109 + 0.087*SL
tF 0.244 0.113 + 0.065*SL 0.126 + 0.062*SL 0.122 + 0.063*SL
tPLH 0.747 0.659 + 0.044*SL 0.675 + 0.040*SL 0.681 + 0.040*SL
tPHL 0.762 0.676 + 0.043*SL 0.701 + 0.036*SL 0.719 + 0.034*SL
CI to S tR 0.297 0.130 + 0.084*SL 0.122 + 0.086*SL 0.108 + 0.087*SL
tF 0.272 0.147 + 0.062*SL 0.153 + 0.061*SL 0.143 + 0.062*SL
tPLH 0.600 0.512 + 0.044*SL 0.528 + 0.040*SL 0.532 + 0.039*SL
tPHL 0.574 0.489 + 0.042*SL 0.516 + 0.036*SL 0.530 + 0.034*SL
A to CO tR 0.286 0.117 + 0.085*SL 0.111 + 0.086*SL 0.101 + 0.088*SL
tF 0.241 0.111 + 0.065*SL 0.121 + 0.063*SL 0.118 + 0.063*SL
tPLH 0.632 0.545 + 0.043*SL 0.558 + 0.040*SL 0.563 + 0.039*SL
tPHL 0.645 0.563 + 0.041*SL 0.585 + 0.036*SL 0.599 + 0.034*SL
B to CO tR 0.362 0.223 + 0.070*SL 0.178 + 0.081*SL 0.142 + 0.086*SL
tF 0.293 0.177 + 0.058*SL 0.176 + 0.058*SL 0.151 + 0.062*SL
tPLH 0.728 0.641 + 0.044*SL 0.654 + 0.040*SL 0.659 + 0.039*SL
tPHL 0.750 0.668 + 0.041*SL 0.691 + 0.036*SL 0.705 + 0.034*SL
CI to CO tR 0.297 0.130 + 0.084*SL 0.122 + 0.086*SL 0.111 + 0.087*SL
tF 0.272 0.143 + 0.064*SL 0.158 + 0.061*SL 0.152 + 0.062*SL
tPLH 0.437 0.343 + 0.047*SL 0.367 + 0.041*SL 0.376 + 0.040*SL
tPHL 0.464 0.368 + 0.048*SL 0.409 + 0.038*SL 0.435 + 0.035*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Truth Table
CI A B S CO
00000
10010
00110
10101
01010
11001
01101
11111
STDM110 3-456 Samsung ASIC
FADH/FA/FAD2
Full Adder with 0.5X/1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FA
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.194 0.117 + 0.038*SL 0.123 + 0.037*SL 0.120 + 0.037*SL
tF 0.183 0.111 + 0.036*SL 0.123 + 0.033*SL 0.134 + 0.032*SL
tPLH 0.619 0.570 + 0.024*SL 0.586 + 0.020*SL 0.600 + 0.019*SL
tPHL 0.620 0.566 + 0.027*SL 0.585 + 0.022*SL 0.605 + 0.019*SL
B to S tR 0.193 0.115 + 0.039*SL 0.121 + 0.037*SL 0.117 + 0.038*SL
tF 0.186 0.114 + 0.036*SL 0.128 + 0.033*SL 0.137 + 0.032*SL
tPLH 0.722 0.674 + 0.024*SL 0.690 + 0.020*SL 0.703 + 0.019*SL
tPHL 0.728 0.675 + 0.027*SL 0.693 + 0.022*SL 0.714 + 0.019*SL
CI to S tR 0.200 0.122 + 0.039*SL 0.131 + 0.037*SL 0.128 + 0.037*SL
tF 0.218 0.147 + 0.036*SL 0.163 + 0.032*SL 0.172 + 0.030*SL
tPLH 0.648 0.599 + 0.024*SL 0.617 + 0.020*SL 0.630 + 0.018*SL
tPHL 0.624 0.571 + 0.027*SL 0.592 + 0.021*SL 0.612 + 0.019*SL
A to CO tR 0.184 0.103 + 0.040*SL 0.112 + 0.038*SL 0.112 + 0.038*SL
tF 0.180 0.106 + 0.037*SL 0.119 + 0.034*SL 0.133 + 0.032*SL
tPLH 0.587 0.542 + 0.022*SL 0.555 + 0.019*SL 0.564 + 0.018*SL
tPHL 0.578 0.531 + 0.024*SL 0.547 + 0.020*SL 0.561 + 0.018*SL
B to CO tR 0.279 0.215 + 0.032*SL 0.221 + 0.031*SL 0.192 + 0.034*SL
tF 0.245 0.183 + 0.031*SL 0.191 + 0.029*SL 0.189 + 0.029*SL
tPLH 0.688 0.643 + 0.023*SL 0.657 + 0.019*SL 0.666 + 0.018*SL
tPHL 0.688 0.640 + 0.024*SL 0.657 + 0.020*SL 0.671 + 0.018*SL
CI to CO tR 0.199 0.120 + 0.039*SL 0.129 + 0.037*SL 0.127 + 0.037*SL
tF 0.215 0.141 + 0.037*SL 0.159 + 0.032*SL 0.169 + 0.031*SL
tPLH 0.417 0.366 + 0.026*SL 0.385 + 0.021*SL 0.402 + 0.019*SL
tPHL 0.462 0.402 + 0.030*SL 0.428 + 0.024*SL 0.454 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-457 STDM110
FADH/FA/FAD2
Full Adder with 0.5X/1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
FAD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.153 0.111 + 0.021*SL 0.119 + 0.019*SL 0.127 + 0.018*SL
tF 0.162 0.118 + 0.022*SL 0.131 + 0.019*SL 0.152 + 0.017*SL
tPLH 0.628 0.596 + 0.016*SL 0.612 + 0.012*SL 0.637 + 0.010*SL
tPHL 0.641 0.605 + 0.018*SL 0.622 + 0.014*SL 0.654 + 0.011*SL
B to S tR 0.156 0.114 + 0.021*SL 0.123 + 0.019*SL 0.129 + 0.018*SL
tF 0.164 0.121 + 0.022*SL 0.134 + 0.019*SL 0.155 + 0.017*SL
tPLH 0.728 0.696 + 0.016*SL 0.712 + 0.012*SL 0.738 + 0.010*SL
tPHL 0.744 0.708 + 0.018*SL 0.725 + 0.014*SL 0.758 + 0.011*SL
CI to S tR 0.159 0.116 + 0.022*SL 0.127 + 0.019*SL 0.136 + 0.018*SL
tF 0.193 0.149 + 0.022*SL 0.164 + 0.018*SL 0.185 + 0.016*SL
tPLH 0.708 0.675 + 0.016*SL 0.692 + 0.012*SL 0.719 + 0.010*SL
tPHL 0.684 0.647 + 0.018*SL 0.666 + 0.014*SL 0.700 + 0.011*SL
A to CO tR 0.146 0.102 + 0.022*SL 0.112 + 0.019*SL 0.123 + 0.018*SL
tF 0.158 0.114 + 0.022*SL 0.126 + 0.019*SL 0.151 + 0.017*SL
tPLH 0.593 0.564 + 0.015*SL 0.579 + 0.011*SL 0.599 + 0.009*SL
tPHL 0.592 0.560 + 0.016*SL 0.575 + 0.012*SL 0.601 + 0.010*SL
B to CO tR 0.240 0.214 + 0.013*SL 0.205 + 0.015*SL 0.183 + 0.017*SL
tF 0.235 0.204 + 0.016*SL 0.207 + 0.015*SL 0.197 + 0.016*SL
tPLH 0.692 0.663 + 0.015*SL 0.678 + 0.011*SL 0.699 + 0.009*SL
tPHL 0.698 0.666 + 0.016*SL 0.681 + 0.012*SL 0.707 + 0.010*SL
CI to CO tR 0.157 0.113 + 0.022*SL 0.124 + 0.019*SL 0.135 + 0.018*SL
tF 0.189 0.145 + 0.022*SL 0.159 + 0.019*SL 0.182 + 0.017*SL
tPLH 0.423 0.390 + 0.017*SL 0.407 + 0.012*SL 0.436 + 0.010*SL
tPHL 0.480 0.440 + 0.020*SL 0.461 + 0.015*SL 0.501 + 0.011*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-458 Samsung ASIC
HADH/HA/HAD2
Half Adder with 0.5X/1X/2X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL) Gate Count
HADH HA HAD2 HADH HA HAD2
ABABAB
1.1 1.7 1.3 2.0 1.3 2.2 3.67 3.67 4.00
A
B
S
CO
A
S
CO
B
Truth Table
ABSCO
0000
0110
1010
1101
Samsung ASIC 3-459 STDM110
HADH/HA/HAD2
Half Adder with 0.5X/1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
HADH
HA
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.268 0.107 + 0.080*SL 0.099 + 0.082*SL 0.087 + 0.084*SL
tF 0.253 0.130 + 0.062*SL 0.133 + 0.061*SL 0.120 + 0.063*SL
tPLH 0.430 0.348 + 0.041*SL 0.360 + 0.038*SL 0.363 + 0.038*SL
tPHL 0.437 0.353 + 0.042*SL 0.379 + 0.036*SL 0.394 + 0.034*SL
B to S tR 0.262 0.100 + 0.081*SL 0.093 + 0.083*SL 0.084 + 0.084*SL
tF 0.236 0.110 + 0.063*SL 0.115 + 0.062*SL 0.106 + 0.063*SL
tPLH 0.349 0.267 + 0.041*SL 0.280 + 0.038*SL 0.283 + 0.038*SL
tPHL 0.359 0.275 + 0.042*SL 0.301 + 0.036*SL 0.315 + 0.034*SL
A to CO tR 0.259 0.091 + 0.084*SL 0.082 + 0.086*SL 0.073 + 0.087*SL
tF 0.198 0.074 + 0.062*SL 0.067 + 0.064*SL 0.060 + 0.065*SL
tPLH 0.270 0.188 + 0.041*SL 0.196 + 0.039*SL 0.197 + 0.039*SL
tPHL 0.280 0.208 + 0.036*SL 0.218 + 0.034*SL 0.220 + 0.033*SL
B to CO tR 0.259 0.091 + 0.084*SL 0.082 + 0.086*SL 0.073 + 0.087*SL
tF 0.197 0.073 + 0.062*SL 0.066 + 0.064*SL 0.057 + 0.065*SL
tPLH 0.273 0.191 + 0.041*SL 0.199 + 0.039*SL 0.200 + 0.039*SL
tPHL 0.261 0.190 + 0.036*SL 0.199 + 0.033*SL 0.201 + 0.033*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.180 0.104 + 0.038*SL 0.108 + 0.037*SL 0.104 + 0.038*SL
tF 0.191 0.123 + 0.034*SL 0.136 + 0.031*SL 0.140 + 0.030*SL
tPLH 0.429 0.383 + 0.023*SL 0.398 + 0.019*SL 0.409 + 0.018*SL
tPHL 0.437 0.385 + 0.026*SL 0.406 + 0.021*SL 0.425 + 0.019*SL
B to S tR 0.175 0.099 + 0.038*SL 0.102 + 0.037*SL 0.099 + 0.038*SL
tF 0.176 0.107 + 0.035*SL 0.119 + 0.031*SL 0.123 + 0.031*SL
tPLH 0.324 0.277 + 0.023*SL 0.292 + 0.020*SL 0.303 + 0.018*SL
tPHL 0.337 0.285 + 0.026*SL 0.305 + 0.021*SL 0.324 + 0.019*SL
A to CO tR 0.154 0.081 + 0.037*SL 0.076 + 0.038*SL 0.071 + 0.038*SL
tF 0.133 0.068 + 0.032*SL 0.066 + 0.033*SL 0.060 + 0.034*SL
tPLH 0.213 0.171 + 0.021*SL 0.181 + 0.018*SL 0.186 + 0.018*SL
tPHL 0.234 0.193 + 0.021*SL 0.202 + 0.018*SL 0.206 + 0.018*SL
B to CO tR 0.153 0.079 + 0.037*SL 0.076 + 0.038*SL 0.070 + 0.039*SL
tF 0.130 0.066 + 0.032*SL 0.061 + 0.033*SL 0.058 + 0.034*SL
tPLH 0.217 0.176 + 0.020*SL 0.185 + 0.018*SL 0.189 + 0.018*SL
tPHL 0.217 0.176 + 0.020*SL 0.185 + 0.018*SL 0.188 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-460 Samsung ASIC
HADH/HA/HAD2
Half Adder with 0.5X/1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
HAD2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
A to S tR 0.146 0.103 + 0.021*SL 0.112 + 0.019*SL 0.117 + 0.019*SL
tF 0.170 0.129 + 0.021*SL 0.142 + 0.017*SL 0.159 + 0.016*SL
tPLH 0.448 0.418 + 0.015*SL 0.433 + 0.012*SL 0.457 + 0.010*SL
tPHL 0.465 0.429 + 0.018*SL 0.448 + 0.013*SL 0.481 + 0.010*SL
B to S tR 0.141 0.097 + 0.022*SL 0.108 + 0.019*SL 0.114 + 0.019*SL
tF 0.159 0.118 + 0.021*SL 0.131 + 0.018*SL 0.149 + 0.016*SL
tPLH 0.338 0.307 + 0.015*SL 0.322 + 0.012*SL 0.346 + 0.010*SL
tPHL 0.357 0.321 + 0.018*SL 0.340 + 0.013*SL 0.374 + 0.010*SL
A to CO tR 0.117 0.076 + 0.020*SL 0.083 + 0.019*SL 0.080 + 0.019*SL
tF 0.102 0.068 + 0.017*SL 0.072 + 0.016*SL 0.068 + 0.017*SL
tPLH 0.227 0.200 + 0.014*SL 0.213 + 0.010*SL 0.228 + 0.009*SL
tPHL 0.243 0.216 + 0.013*SL 0.228 + 0.010*SL 0.242 + 0.009*SL
B to CO tR 0.116 0.077 + 0.020*SL 0.082 + 0.019*SL 0.078 + 0.019*SL
tF 0.098 0.061 + 0.018*SL 0.070 + 0.016*SL 0.065 + 0.017*SL
tPLH 0.239 0.212 + 0.014*SL 0.225 + 0.010*SL 0.240 + 0.009*SL
tPHL 0.234 0.207 + 0.013*SL 0.219 + 0.010*SL 0.233 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-461 STDM110
SCG23/SCG23D2
Full Adder with one inverted input, 1X/2X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
SCG23 SCG23D2 SCG23 SCG23D2
CI AN B CI AN B
0.5 0.5 1.0 0.5 0.6 1.0 6.67 7.00
AN
B
CI
S
CO
Truth Table
AN B CI S CO
00010
00101
01001
01111
10000
10110
11010
11101
STDM110 3-462 Samsung ASIC
SCG23/SCG23D2
Full Adder with one inverted input, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG23
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
AN to S tR 0.195 0.117 + 0.039*SL 0.125 + 0.037*SL 0.122 + 0.037*SL
tF 0.183 0.108 + 0.037*SL 0.123 + 0.034*SL 0.137 + 0.032*SL
tPLH 0.767 0.718 + 0.024*SL 0.734 + 0.021*SL 0.749 + 0.019*SL
tPHL 0.741 0.687 + 0.027*SL 0.706 + 0.023*SL 0.728 + 0.020*SL
B to S tR 0.194 0.116 + 0.039*SL 0.124 + 0.037*SL 0.120 + 0.038*SL
tF 0.189 0.116 + 0.036*SL 0.129 + 0.033*SL 0.141 + 0.032*SL
tPLH 0.742 0.693 + 0.024*SL 0.710 + 0.021*SL 0.724 + 0.019*SL
tPHL 0.735 0.681 + 0.027*SL 0.700 + 0.023*SL 0.721 + 0.020*SL
CI to S tR 0.200 0.121 + 0.039*SL 0.131 + 0.037*SL 0.128 + 0.037*SL
tF 0.222 0.151 + 0.036*SL 0.167 + 0.032*SL 0.177 + 0.031*SL
tPLH 0.663 0.614 + 0.024*SL 0.632 + 0.020*SL 0.645 + 0.018*SL
tPHL 0.625 0.571 + 0.027*SL 0.592 + 0.022*SL 0.613 + 0.019*SL
AN to CO tR 0.184 0.104 + 0.040*SL 0.112 + 0.038*SL 0.113 + 0.038*SL
tF 0.182 0.107 + 0.038*SL 0.123 + 0.034*SL 0.137 + 0.032*SL
tPLH 0.733 0.688 + 0.023*SL 0.701 + 0.019*SL 0.711 + 0.018*SL
tPHL 0.684 0.637 + 0.024*SL 0.653 + 0.020*SL 0.667 + 0.018*SL
B to CO tR 0.287 0.225 + 0.031*SL 0.229 + 0.030*SL 0.198 + 0.034*SL
tF 0.246 0.183 + 0.031*SL 0.192 + 0.029*SL 0.190 + 0.029*SL
tPLH 0.706 0.661 + 0.023*SL 0.675 + 0.019*SL 0.685 + 0.018*SL
tPHL 0.691 0.643 + 0.024*SL 0.659 + 0.020*SL 0.674 + 0.018*SL
CI to CO tR 0.199 0.120 + 0.039*SL 0.129 + 0.037*SL 0.127 + 0.037*SL
tF 0.217 0.143 + 0.037*SL 0.161 + 0.033*SL 0.175 + 0.031*SL
tPLH 0.417 0.366 + 0.026*SL 0.385 + 0.021*SL 0.402 + 0.019*SL
tPHL 0.475 0.415 + 0.030*SL 0.440 + 0.024*SL 0.468 + 0.020*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-463 STDM110
SCG23/SCG23D2
Full Adder with one inverted input, 1X/2X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
SCG23D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
AN to S tR 0.165 0.120 + 0.022*SL 0.131 + 0.019*SL 0.142 + 0.018*SL
tF 0.158 0.113 + 0.023*SL 0.127 + 0.019*SL 0.152 + 0.017*SL
tPLH 0.776 0.744 + 0.016*SL 0.760 + 0.012*SL 0.786 + 0.010*SL
tPHL 0.775 0.739 + 0.018*SL 0.755 + 0.014*SL 0.789 + 0.011*SL
B to S tR 0.158 0.116 + 0.021*SL 0.123 + 0.019*SL 0.130 + 0.019*SL
tF 0.167 0.124 + 0.022*SL 0.135 + 0.019*SL 0.157 + 0.017*SL
tPLH 0.746 0.714 + 0.016*SL 0.730 + 0.012*SL 0.756 + 0.010*SL
tPHL 0.749 0.712 + 0.018*SL 0.729 + 0.014*SL 0.763 + 0.011*SL
CI to S tR 0.159 0.115 + 0.022*SL 0.126 + 0.019*SL 0.135 + 0.019*SL
tF 0.199 0.156 + 0.022*SL 0.169 + 0.018*SL 0.192 + 0.016*SL
tPLH 0.729 0.696 + 0.016*SL 0.713 + 0.012*SL 0.740 + 0.010*SL
tPHL 0.682 0.646 + 0.018*SL 0.665 + 0.014*SL 0.699 + 0.011*SL
AN to CO tR 0.147 0.102 + 0.022*SL 0.112 + 0.020*SL 0.123 + 0.019*SL
tF 0.162 0.117 + 0.022*SL 0.129 + 0.019*SL 0.154 + 0.017*SL
tPLH 0.743 0.713 + 0.015*SL 0.728 + 0.011*SL 0.748 + 0.009*SL
tPHL 0.699 0.667 + 0.016*SL 0.682 + 0.012*SL 0.707 + 0.010*SL
B to CO tR 0.243 0.218 + 0.012*SL 0.206 + 0.016*SL 0.182 + 0.018*SL
tF 0.236 0.205 + 0.016*SL 0.207 + 0.015*SL 0.199 + 0.016*SL
tPLH 0.711 0.681 + 0.015*SL 0.696 + 0.011*SL 0.717 + 0.009*SL
tPHL 0.699 0.666 + 0.016*SL 0.682 + 0.012*SL 0.708 + 0.010*SL
CI to CO tR 0.158 0.114 + 0.022*SL 0.125 + 0.020*SL 0.136 + 0.019*SL
tF 0.196 0.151 + 0.022*SL 0.165 + 0.019*SL 0.189 + 0.017*SL
tPLH 0.425 0.392 + 0.017*SL 0.409 + 0.013*SL 0.438 + 0.010*SL
tPHL 0.496 0.455 + 0.021*SL 0.477 + 0.015*SL 0.518 + 0.012*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
STDM110 3-464 Samsung ASIC
MULTIPLEXERS
Cell List
Cell Name Function Description
MX2DH 2 > 1 Non-Inverting Mux with 0.5X Drive
MX2 2 > 1 Non-Inverting Mux
MX2D2 2 > 1 Non-Inverting Mux with 2X Drive
MX2D4 2 > 1 Non-Inverting Mux with 4X Drive
MX2X4 4-Bit 2 > 1 Non-Inverting Mux
MX2IDH 2 > 1 Inverting Mux with 0.5X Drive
MX2I 2 > 1 Inverting Mux
MX2ID2 2 > 1 Inverting Mux with 2X Drive
MX2ID4 2 > 1 Inverting Mux with 4X Drive
MX2IDHA 2 > 1 Inverting Mux with Separate S and SN Inputs, 0.5X Drive
MX2IA 2 > 1 Inverting Mux with Separate S and SN Inputs
MX2ID2A 2 > 1 Inverting Mux with Separate S and SN Inputs, 2X Drive
MX2ID4A 2 > 1 Inverting Mux with Separate S and SN Inputs, 4X Drive
MX2IX4 4-Bit 2 > 1 Inverting Mux
MX3I 3 > 1 Inverting Mux
MX3ID2 3 > 1 Inverting Mux with 2X Drive
MX3ID4 3 > 1 Inverting Mux with 4X Drive
MX4 4 > 1 Non-Inverting Mux
MX4D2 4 > 1 Non-Inverting Mux with 2X Drive
MX4D4 4 > 1 Non-Inverting Mux with 4X Drive
MX8 8 > 1 Non-Inverting Mux
MX8D2 8 > 1 Non-Inverting Mux with 2X Drive
MX8D4 8 > 1 Non-inverting Mux with 4X Drive
Samsung ASIC 3-465 STDM110
MX2DH/MX2/MX2D2/MX2D4
2 > 1 Non-Inverting MUX with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL)
MX2DH MX2 MX2D2 MX2D4
D0D1SD0D1SD0D1SD0D1S
0.6 0.6 1.0 0.8 0.8 1.0 0.8 0.8 1.0 0.8 0.8 1.0
Gate Count
MX2DH MX2 MX2D2 MX2D4
2.33 2.33 2.67 3.33
D0
D1
Y
S
S
SB Y
SB
S
S
D0
D1
Truth Table
D0 D1 S Y
0x00
1x01
x010
x111
STDM110 3-466 Samsung ASIC
MX2DH/MX2/MX2D2/MX2D4
2 > 1 Non-Inverting MUX with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2DH
MX2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.268 0.107 + 0.080*SL 0.099 + 0.082*SL 0.088 + 0.084*SL
tF 0.238 0.113 + 0.063*SL 0.117 + 0.062*SL 0.107 + 0.063*SL
tPLH 0.351 0.268 + 0.041*SL 0.281 + 0.038*SL 0.285 + 0.038*SL
tPHL 0.373 0.289 + 0.042*SL 0.315 + 0.036*SL 0.329 + 0.034*SL
D1 to Y tR 0.267 0.107 + 0.080*SL 0.098 + 0.082*SL 0.087 + 0.084*SL
tF 0.237 0.112 + 0.063*SL 0.115 + 0.062*SL 0.106 + 0.063*SL
tPLH 0.353 0.270 + 0.041*SL 0.283 + 0.038*SL 0.287 + 0.038*SL
tPHL 0.378 0.294 + 0.042*SL 0.319 + 0.036*SL 0.333 + 0.034*SL
S to Y tR 0.268 0.106 + 0.081*SL 0.099 + 0.082*SL 0.088 + 0.084*SL
tF 0.235 0.108 + 0.063*SL 0.113 + 0.062*SL 0.104 + 0.063*SL
tPLH 0.364 0.281 + 0.041*SL 0.294 + 0.038*SL 0.298 + 0.038*SL
tPHL 0.359 0.276 + 0.042*SL 0.300 + 0.036*SL 0.314 + 0.034*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.168 0.094 + 0.037*SL 0.094 + 0.037*SL 0.088 + 0.038*SL
tF 0.170 0.100 + 0.035*SL 0.109 + 0.033*SL 0.108 + 0.033*SL
tPLH 0.278 0.234 + 0.022*SL 0.247 + 0.019*SL 0.255 + 0.018*SL
tPHL 0.309 0.258 + 0.025*SL 0.277 + 0.021*SL 0.292 + 0.019*SL
D1 to Y tR 0.167 0.094 + 0.037*SL 0.093 + 0.037*SL 0.087 + 0.038*SL
tF 0.170 0.100 + 0.035*SL 0.109 + 0.033*SL 0.109 + 0.033*SL
tPLH 0.276 0.232 + 0.022*SL 0.245 + 0.019*SL 0.254 + 0.018*SL
tPHL 0.313 0.263 + 0.025*SL 0.281 + 0.021*SL 0.296 + 0.019*SL
S to Y tR 0.170 0.096 + 0.037*SL 0.096 + 0.037*SL 0.089 + 0.038*SL
tF 0.168 0.097 + 0.035*SL 0.108 + 0.033*SL 0.107 + 0.033*SL
tPLH 0.318 0.273 + 0.022*SL 0.287 + 0.019*SL 0.295 + 0.018*SL
tPHL 0.324 0.274 + 0.025*SL 0.292 + 0.021*SL 0.307 + 0.019*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-467 STDM110
MX2DH/MX2/MX2D2/MX2D4
2 > 1 Non-Inverting MUX with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2D2
MX2D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.135 0.093 + 0.021*SL 0.101 + 0.019*SL 0.104 + 0.019*SL
tF 0.143 0.102 + 0.021*SL 0.116 + 0.017*SL 0.131 + 0.016*SL
tPLH 0.292 0.263 + 0.015*SL 0.277 + 0.011*SL 0.299 + 0.009*SL
tPHL 0.323 0.290 + 0.017*SL 0.306 + 0.013*SL 0.336 + 0.010*SL
D1 to Y tR 0.135 0.093 + 0.021*SL 0.101 + 0.019*SL 0.102 + 0.019*SL
tF 0.144 0.103 + 0.020*SL 0.117 + 0.017*SL 0.130 + 0.016*SL
tPLH 0.289 0.260 + 0.015*SL 0.274 + 0.011*SL 0.295 + 0.009*SL
tPHL 0.327 0.293 + 0.017*SL 0.310 + 0.013*SL 0.340 + 0.010*SL
S to Y tR 0.139 0.097 + 0.021*SL 0.105 + 0.019*SL 0.105 + 0.019*SL
tF 0.144 0.104 + 0.020*SL 0.115 + 0.017*SL 0.129 + 0.016*SL
tPLH 0.328 0.298 + 0.015*SL 0.313 + 0.011*SL 0.334 + 0.009*SL
tPHL 0.333 0.300 + 0.017*SL 0.317 + 0.013*SL 0.347 + 0.010*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.155 0.132 + 0.011*SL 0.136 + 0.010*SL 0.152 + 0.009*SL
tF 0.176 0.154 + 0.011*SL 0.159 + 0.010*SL 0.188 + 0.008*SL
tPLH 0.361 0.342 + 0.010*SL 0.353 + 0.007*SL 0.387 + 0.005*SL
tPHL 0.409 0.387 + 0.011*SL 0.400 + 0.008*SL 0.442 + 0.006*SL
D1 to Y tR 0.153 0.131 + 0.011*SL 0.134 + 0.010*SL 0.151 + 0.009*SL
tF 0.177 0.154 + 0.012*SL 0.161 + 0.010*SL 0.188 + 0.008*SL
tPLH 0.358 0.338 + 0.010*SL 0.349 + 0.007*SL 0.383 + 0.005*SL
tPHL 0.413 0.391 + 0.011*SL 0.403 + 0.008*SL 0.445 + 0.006*SL
S to Y tR 0.155 0.133 + 0.011*SL 0.136 + 0.010*SL 0.153 + 0.009*SL
tF 0.177 0.153 + 0.012*SL 0.162 + 0.010*SL 0.188 + 0.008*SL
tPLH 0.390 0.371 + 0.010*SL 0.382 + 0.007*SL 0.416 + 0.005*SL
tPHL 0.414 0.391 + 0.011*SL 0.404 + 0.008*SL 0.446 + 0.006*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-468 Samsung ASIC
MX2X4
4-Bit 2 > 1 Non-Inverting MUX
Logic Symbol
Cell Data Input Load (SL) Gate Count
D00 D10 D01 D11 D02 D12 D03 D13 S 8.67
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 3.4
Y0
Y1
Y2
Y3
D00
D10
D01
D11
D02
D12
D03
D13 S
Truth Table
S Y0Y1Y2Y3
0 D00 D01 D02 D03
1 D10 D11 D12 D13
Samsung ASIC 3-469 STDM110
MX2X4
4-Bit 2 > 1 Non-Inverting MUX
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2X4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D00 to Y0 tR 0.165 0.093 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.105 + 0.031*SL
tPLH 0.275 0.232 + 0.022*SL 0.245 + 0.018*SL 0.252 + 0.017*SL
tPHL 0.304 0.256 + 0.024*SL 0.274 + 0.020*SL 0.289 + 0.018*SL
D10 to Y0 tR 0.165 0.092 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.037*SL
tF 0.163 0.097 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.276 0.233 + 0.022*SL 0.246 + 0.018*SL 0.254 + 0.017*SL
tPHL 0.309 0.260 + 0.024*SL 0.278 + 0.020*SL 0.293 + 0.018*SL
S to Y0 tR 0.169 0.096 + 0.036*SL 0.096 + 0.036*SL 0.090 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.321 0.278 + 0.022*SL 0.291 + 0.018*SL 0.299 + 0.017*SL
tPHL 0.336 0.287 + 0.024*SL 0.305 + 0.020*SL 0.320 + 0.018*SL
D01 to Y1 tR 0.165 0.093 + 0.036*SL 0.092 + 0.037*SL 0.087 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.276 0.232 + 0.022*SL 0.245 + 0.018*SL 0.254 + 0.017*SL
tPHL 0.305 0.257 + 0.024*SL 0.274 + 0.020*SL 0.290 + 0.018*SL
D11 to Y1 tR 0.165 0.093 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.274 0.230 + 0.022*SL 0.243 + 0.018*SL 0.251 + 0.017*SL
tPHL 0.306 0.257 + 0.024*SL 0.275 + 0.020*SL 0.290 + 0.018*SL
S to Y1 tR 0.169 0.096 + 0.036*SL 0.097 + 0.036*SL 0.090 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.107 + 0.031*SL 0.106 + 0.031*SL
tPLH 0.324 0.280 + 0.022*SL 0.294 + 0.019*SL 0.302 + 0.017*SL
tPHL 0.338 0.289 + 0.024*SL 0.307 + 0.020*SL 0.322 + 0.018*SL
D02 to Y2 tR 0.165 0.093 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.037*SL
tF 0.164 0.099 + 0.033*SL 0.106 + 0.031*SL 0.106 + 0.031*SL
tPLH 0.275 0.232 + 0.021*SL 0.245 + 0.018*SL 0.253 + 0.017*SL
tPHL 0.305 0.256 + 0.024*SL 0.274 + 0.020*SL 0.289 + 0.018*SL
D12 to Y2 tR 0.165 0.093 + 0.036*SL 0.092 + 0.037*SL 0.086 + 0.037*SL
tF 0.164 0.097 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.277 0.234 + 0.022*SL 0.246 + 0.018*SL 0.254 + 0.017*SL
tPHL 0.309 0.261 + 0.024*SL 0.278 + 0.020*SL 0.293 + 0.018*SL
S to Y2 tR 0.169 0.097 + 0.036*SL 0.097 + 0.036*SL 0.090 + 0.037*SL
tF 0.165 0.098 + 0.033*SL 0.107 + 0.031*SL 0.108 + 0.031*SL
tPLH 0.321 0.278 + 0.022*SL 0.291 + 0.018*SL 0.299 + 0.017*SL
tPHL 0.336 0.287 + 0.024*SL 0.305 + 0.020*SL 0.320 + 0.018*SL
D03 to Y3 tR 0.165 0.093 + 0.036*SL 0.092 + 0.037*SL 0.087 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.276 0.232 + 0.022*SL 0.245 + 0.018*SL 0.253 + 0.017*SL
tPHL 0.305 0.256 + 0.024*SL 0.274 + 0.020*SL 0.290 + 0.018*SL
STDM110 3-470 Samsung ASIC
MX2X4
4-Bit 2 > 1 Non-Inverting MUX
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2X4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D13 to Y3 tR 0.165 0.093 + 0.036*SL 0.091 + 0.037*SL 0.086 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.106 + 0.031*SL 0.107 + 0.031*SL
tPLH 0.274 0.230 + 0.022*SL 0.243 + 0.018*SL 0.251 + 0.017*SL
tPHL 0.306 0.257 + 0.024*SL 0.275 + 0.020*SL 0.290 + 0.018*SL
S to Y3 tR 0.169 0.096 + 0.036*SL 0.097 + 0.036*SL 0.090 + 0.037*SL
tF 0.164 0.098 + 0.033*SL 0.107 + 0.031*SL 0.106 + 0.031*SL
tPLH 0.324 0.280 + 0.022*SL 0.294 + 0.019*SL 0.302 + 0.017*SL
tPHL 0.338 0.289 + 0.024*SL 0.307 + 0.020*SL 0.322 + 0.018*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-471 STDM110
MX2IDH/MX2I/MX2ID2/MX2ID4
2 > 1 Inverting MUX with 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL)
MX2IDH MX2I MX2ID2 MX2ID4
D0 D1 S D0 D1 S D0 D1 S D0 D1 S
0.5 0.6 1.0 1.0 1.1 1.5 1.0 1.1 1.5 1.0 1.1 1.5
Gate Count
MX2IDH MX2I MX2ID2 MX2ID4
2.00 2.00 3.00 3.67
D0
D1
YN
S
YN
D0
S
D1
Truth Table
D0 D1 S YN
0x01
1x00
x011
x110
STDM110 3-472 Samsung ASIC
MX2IDH/MX2I/MX2ID2/MX2ID4
2 > 1 Inverting MUX with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2IDH
MX2I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.623 0.281 + 0.171*SL 0.265 + 0.175*SL 0.267 + 0.174*SL
tF 0.443 0.224 + 0.109*SL 0.203 + 0.115*SL 0.189 + 0.116*SL
tPLH 0.346 0.187 + 0.080*SL 0.190 + 0.079*SL 0.192 + 0.078*SL
tPHL 0.245 0.130 + 0.057*SL 0.131 + 0.057*SL 0.132 + 0.057*SL
D1 to YN tR 0.597 0.252 + 0.173*SL 0.244 + 0.175*SL 0.242 + 0.175*SL
tF 0.487 0.265 + 0.111*SL 0.247 + 0.115*SL 0.236 + 0.117*SL
tPLH 0.383 0.223 + 0.080*SL 0.227 + 0.079*SL 0.229 + 0.079*SL
tPHL 0.306 0.189 + 0.058*SL 0.194 + 0.057*SL 0.197 + 0.057*SL
S to YN tR 0.621 0.276 + 0.173*SL 0.269 + 0.174*SL 0.268 + 0.174*SL
tF 0.447 0.216 + 0.116*SL 0.209 + 0.118*SL 0.210 + 0.117*SL
tPLH 0.386 0.227 + 0.079*SL 0.230 + 0.079*SL 0.232 + 0.078*SL
tPHL 0.337 0.223 + 0.057*SL 0.225 + 0.056*SL 0.226 + 0.056*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.344 0.199 + 0.072*SL 0.190 + 0.075*SL 0.176 + 0.076*SL
tF 0.254 0.155 + 0.049*SL 0.144 + 0.052*SL 0.133 + 0.053*SL
tPLH 0.200 0.131 + 0.034*SL 0.130 + 0.035*SL 0.131 + 0.034*SL
tPHL 0.162 0.105 + 0.028*SL 0.110 + 0.027*SL 0.112 + 0.027*SL
D1 to YN tR 0.345 0.193 + 0.076*SL 0.188 + 0.077*SL 0.181 + 0.078*SL
tF 0.324 0.225 + 0.049*SL 0.215 + 0.052*SL 0.202 + 0.053*SL
tPLH 0.254 0.181 + 0.036*SL 0.184 + 0.036*SL 0.186 + 0.035*SL
tPHL 0.222 0.167 + 0.028*SL 0.170 + 0.027*SL 0.173 + 0.027*SL
S to YN tR 0.337 0.182 + 0.077*SL 0.179 + 0.078*SL 0.176 + 0.079*SL
tF 0.277 0.174 + 0.052*SL 0.167 + 0.053*SL 0.158 + 0.055*SL
tPLH 0.294 0.223 + 0.036*SL 0.224 + 0.035*SL 0.225 + 0.035*SL
tPHL 0.281 0.225 + 0.028*SL 0.230 + 0.027*SL 0.232 + 0.026*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Samsung ASIC 3-473 STDM110
MX2IDH/MX2I/MX2ID2/MX2ID4
2 > 1 Inverting MUX with 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2ID2
MX2ID4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.105 0.069 + 0.018*SL 0.069 + 0.018*SL 0.058 + 0.019*SL
tF 0.098 0.065 + 0.016*SL 0.067 + 0.016*SL 0.063 + 0.016*SL
tPLH 0.353 0.329 + 0.012*SL 0.339 + 0.009*SL 0.346 + 0.009*SL
tPHL 0.333 0.307 + 0.013*SL 0.319 + 0.010*SL 0.331 + 0.009*SL
D1 to YN tR 0.106 0.070 + 0.018*SL 0.069 + 0.018*SL 0.059 + 0.019*SL
tF 0.099 0.066 + 0.016*SL 0.069 + 0.016*SL 0.065 + 0.016*SL
tPLH 0.407 0.384 + 0.012*SL 0.394 + 0.009*SL 0.401 + 0.009*SL
tPHL 0.400 0.375 + 0.013*SL 0.387 + 0.010*SL 0.399 + 0.009*SL
S to YN tR 0.106 0.069 + 0.018*SL 0.069 + 0.018*SL 0.059 + 0.019*SL
tF 0.097 0.064 + 0.017*SL 0.067 + 0.016*SL 0.064 + 0.016*SL
tPLH 0.449 0.425 + 0.012*SL 0.435 + 0.009*SL 0.443 + 0.009*SL
tPHL 0.442 0.417 + 0.013*SL 0.428 + 0.010*SL 0.440 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.105 0.086 + 0.010*SL 0.088 + 0.009*SL 0.085 + 0.009*SL
tF 0.103 0.082 + 0.010*SL 0.090 + 0.008*SL 0.095 + 0.008*SL
tPLH 0.403 0.388 + 0.008*SL 0.396 + 0.006*SL 0.415 + 0.005*SL
tPHL 0.390 0.373 + 0.008*SL 0.383 + 0.006*SL 0.408 + 0.005*SL
D1 to YN tR 0.105 0.085 + 0.010*SL 0.090 + 0.009*SL 0.085 + 0.009*SL
tF 0.105 0.084 + 0.010*SL 0.092 + 0.008*SL 0.097 + 0.008*SL
tPLH 0.456 0.441 + 0.008*SL 0.450 + 0.006*SL 0.469 + 0.005*SL
tPHL 0.456 0.440 + 0.008*SL 0.449 + 0.006*SL 0.474 + 0.005*SL
S to YN tR 0.106 0.085 + 0.010*SL 0.090 + 0.009*SL 0.085 + 0.009*SL
tF 0.102 0.083 + 0.010*SL 0.088 + 0.009*SL 0.096 + 0.008*SL
tPLH 0.498 0.482 + 0.008*SL 0.491 + 0.006*SL 0.510 + 0.005*SL
tPHL 0.496 0.479 + 0.008*SL 0.489 + 0.006*SL 0.513 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-474 Samsung ASIC
MX2IDHA/MX2IA/MX2ID2A/MX2ID4A
2 > 1 Inverting MUX with Separate S and SN Inputs, 0.5X/1X/2X/4X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL)
MX2IDHA MX2IA MX2ID2A MX2ID4A
D0 D1 S SN D0 D1 S SN D0 D1 S SN D0 D1 S SN
0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.1 1.0 1.1 1.0 1.0
Gate Count
MX2IDHA MX2IA MX2ID2A MX2ID4A
1.67 1.67 2.67 3.33
YN
D0
D1 S SN
YN
D0
SN
D1
S
Truth Table
D0 D1 S SN YN
0 x 011
1 x 010
x 0 101
x 1 100
Samsung ASIC 3-475 STDM110
MX2IDHA/MX2IA/MX2ID2A/MX2ID4A
2 > 1 Inverting MUX with Separate S and SN Inputs, 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2IDHA
MX2IA
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.578 0.237 + 0.170*SL 0.218 + 0.175*SL 0.220 + 0.175*SL
tF 0.387 0.168 + 0.110*SL 0.148 + 0.115*SL 0.134 + 0.117*SL
tPLH 0.304 0.146 + 0.079*SL 0.148 + 0.079*SL 0.149 + 0.078*SL
tPHL 0.237 0.122 + 0.057*SL 0.124 + 0.057*SL 0.127 + 0.056*SL
D1 to YN tR 0.580 0.236 + 0.172*SL 0.228 + 0.174*SL 0.225 + 0.174*SL
tF 0.457 0.232 + 0.112*SL 0.218 + 0.116*SL 0.211 + 0.117*SL
tPLH 0.381 0.222 + 0.080*SL 0.225 + 0.079*SL 0.227 + 0.078*SL
tPHL 0.311 0.194 + 0.059*SL 0.200 + 0.057*SL 0.204 + 0.057*SL
S to YN tR 0.609 0.264 + 0.172*SL 0.257 + 0.174*SL 0.255 + 0.174*SL
tF 0.454 0.226 + 0.114*SL 0.219 + 0.116*SL 0.212 + 0.117*SL
tPLH 0.402 0.244 + 0.079*SL 0.246 + 0.079*SL 0.248 + 0.078*SL
tPHL 0.307 0.189 + 0.059*SL 0.196 + 0.057*SL 0.201 + 0.057*SL
SN to YN tR 0.607 0.266 + 0.171*SL 0.248 + 0.175*SL 0.250 + 0.175*SL
tF 0.382 0.157 + 0.112*SL 0.145 + 0.115*SL 0.135 + 0.116*SL
tPLH 0.325 0.167 + 0.079*SL 0.168 + 0.079*SL 0.169 + 0.078*SL
tPHL 0.232 0.117 + 0.058*SL 0.120 + 0.057*SL 0.123 + 0.056*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.355 0.208 + 0.074*SL 0.199 + 0.076*SL 0.186 + 0.078*SL
tF 0.255 0.157 + 0.049*SL 0.145 + 0.052*SL 0.134 + 0.053*SL
tPLH 0.202 0.133 + 0.035*SL 0.131 + 0.035*SL 0.132 + 0.035*SL
tPHL 0.164 0.108 + 0.028*SL 0.113 + 0.027*SL 0.114 + 0.027*SL
D1 to YN tR 0.351 0.201 + 0.075*SL 0.193 + 0.077*SL 0.187 + 0.078*SL
tF 0.312 0.210 + 0.051*SL 0.203 + 0.053*SL 0.194 + 0.054*SL
tPLH 0.260 0.188 + 0.036*SL 0.190 + 0.035*SL 0.192 + 0.035*SL
tPHL 0.232 0.176 + 0.028*SL 0.179 + 0.027*SL 0.183 + 0.027*SL
S to YN tR 0.376 0.225 + 0.076*SL 0.219 + 0.077*SL 0.213 + 0.078*SL
tF 0.306 0.201 + 0.052*SL 0.198 + 0.053*SL 0.192 + 0.054*SL
tPLH 0.280 0.209 + 0.036*SL 0.210 + 0.035*SL 0.212 + 0.035*SL
tPHL 0.227 0.170 + 0.028*SL 0.174 + 0.027*SL 0.178 + 0.027*SL
SN to YN tR 0.381 0.233 + 0.074*SL 0.224 + 0.076*SL 0.212 + 0.078*SL
tF 0.246 0.144 + 0.051*SL 0.136 + 0.053*SL 0.128 + 0.054*SL
tPLH 0.221 0.152 + 0.035*SL 0.150 + 0.035*SL 0.151 + 0.035*SL
tPHL 0.158 0.102 + 0.028*SL 0.107 + 0.027*SL 0.109 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-476 Samsung ASIC
MX2IDHA/MX2IA/MX2ID2A/MX2ID4A
2 > 1 Inverting MUX with Separate S and SN Inputs, 0.5X/1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2ID2A
MX2ID4A
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.109 0.073 + 0.018*SL 0.072 + 0.018*SL 0.063 + 0.019*SL
tF 0.099 0.065 + 0.017*SL 0.071 + 0.015*SL 0.067 + 0.016*SL
tPLH 0.365 0.341 + 0.012*SL 0.351 + 0.010*SL 0.360 + 0.009*SL
tPHL 0.341 0.315 + 0.013*SL 0.328 + 0.010*SL 0.341 + 0.009*SL
D1 to YN tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.063 + 0.019*SL
tF 0.100 0.067 + 0.016*SL 0.071 + 0.015*SL 0.067 + 0.016*SL
tPLH 0.409 0.385 + 0.012*SL 0.395 + 0.010*SL 0.404 + 0.009*SL
tPHL 0.402 0.377 + 0.013*SL 0.389 + 0.010*SL 0.403 + 0.009*SL
S to YN tR 0.109 0.072 + 0.018*SL 0.073 + 0.018*SL 0.062 + 0.019*SL
tF 0.099 0.065 + 0.017*SL 0.070 + 0.015*SL 0.068 + 0.016*SL
tPLH 0.432 0.408 + 0.012*SL 0.418 + 0.010*SL 0.427 + 0.009*SL
tPHL 0.397 0.371 + 0.013*SL 0.383 + 0.010*SL 0.397 + 0.009*SL
SN to YN tR 0.109 0.073 + 0.018*SL 0.073 + 0.018*SL 0.062 + 0.019*SL
tF 0.099 0.066 + 0.016*SL 0.070 + 0.015*SL 0.067 + 0.016*SL
tPLH 0.391 0.367 + 0.012*SL 0.377 + 0.010*SL 0.386 + 0.009*SL
tPHL 0.335 0.310 + 0.013*SL 0.322 + 0.010*SL 0.335 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.097 0.077 + 0.010*SL 0.082 + 0.009*SL 0.073 + 0.009*SL
tF 0.087 0.069 + 0.009*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.390 0.375 + 0.007*SL 0.383 + 0.005*SL 0.398 + 0.004*SL
tPHL 0.352 0.336 + 0.008*SL 0.345 + 0.006*SL 0.363 + 0.005*SL
D1 to YN tR 0.098 0.078 + 0.010*SL 0.081 + 0.009*SL 0.073 + 0.009*SL
tF 0.088 0.069 + 0.010*SL 0.075 + 0.008*SL 0.074 + 0.008*SL
tPLH 0.433 0.419 + 0.007*SL 0.426 + 0.005*SL 0.442 + 0.004*SL
tPHL 0.412 0.397 + 0.008*SL 0.406 + 0.006*SL 0.424 + 0.005*SL
S to YN tR 0.098 0.080 + 0.009*SL 0.081 + 0.009*SL 0.073 + 0.009*SL
tF 0.086 0.066 + 0.010*SL 0.074 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.457 0.442 + 0.007*SL 0.450 + 0.005*SL 0.466 + 0.004*SL
tPHL 0.407 0.392 + 0.008*SL 0.400 + 0.006*SL 0.419 + 0.005*SL
SN to YN tR 0.098 0.079 + 0.010*SL 0.081 + 0.009*SL 0.074 + 0.009*SL
tF 0.086 0.067 + 0.010*SL 0.073 + 0.008*SL 0.073 + 0.008*SL
tPLH 0.416 0.401 + 0.007*SL 0.409 + 0.005*SL 0.425 + 0.004*SL
tPHL 0.346 0.330 + 0.008*SL 0.339 + 0.006*SL 0.357 + 0.005*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
Samsung ASIC 3-477 STDM110
MX2IX4
4-Bit 2 > 1 Inverting MUX
Logic Symbol
Cell Data Input Load (SL) Gate Count
D00 D10 D01 D11 D02 D12 D03 D13 S 6.00
1.0 1.1 1.0 1.1 1.0 1.1 1.0 1.1 5.3
YN0
YN1
YN2
YN3
D00
D10
D01
D11
D02
D12
D03
D13 S
Truth Table
S YN0 YN1 YN2 YN3
0 D00 D01 D02 D03
1 D10 D11 D12 D13
STDM110 3-478 Samsung ASIC
MX2IX4
4-Bit 2 > 1 Inverting MUX
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2IX4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D00 to
YN0 tR 0.344 0.198 + 0.073*SL 0.189 + 0.075*SL 0.175 + 0.077*SL
tF 0.253 0.155 + 0.049*SL 0.144 + 0.052*SL 0.132 + 0.053*SL
tPLH 0.202 0.132 + 0.035*SL 0.131 + 0.035*SL 0.132 + 0.035*SL
tPHL 0.161 0.104 + 0.028*SL 0.110 + 0.027*SL 0.111 + 0.027*SL
D10 to
YN0 tR 0.341 0.190 + 0.075*SL 0.183 + 0.077*SL 0.176 + 0.078*SL
tF 0.327 0.226 + 0.050*SL 0.215 + 0.053*SL 0.203 + 0.055*SL
tPLH 0.249 0.177 + 0.036*SL 0.179 + 0.035*SL 0.182 + 0.035*SL
tPHL 0.224 0.167 + 0.028*SL 0.170 + 0.028*SL 0.173 + 0.027*SL
S to YN0 tR 0.337 0.187 + 0.075*SL 0.178 + 0.077*SL 0.172 + 0.078*SL
tF 0.276 0.168 + 0.054*SL 0.167 + 0.054*SL 0.158 + 0.055*SL
tPLH 0.345 0.275 + 0.035*SL 0.276 + 0.035*SL 0.275 + 0.035*SL
tPHL 0.287 0.229 + 0.029*SL 0.236 + 0.027*SL 0.240 + 0.027*SL
D01 to
YN1 tR 0.344 0.197 + 0.074*SL 0.188 + 0.076*SL 0.174 + 0.078*SL
tF 0.252 0.155 + 0.049*SL 0.143 + 0.052*SL 0.130 + 0.053*SL
tPLH 0.202 0.132 + 0.035*SL 0.132 + 0.035*SL 0.132 + 0.035*SL
tPHL 0.160 0.104 + 0.028*SL 0.109 + 0.027*SL 0.111 + 0.027*SL
D11 to
YN1 tR 0.341 0.190 + 0.075*SL 0.183 + 0.077*SL 0.176 + 0.078*SL
tF 0.319 0.221 + 0.049*SL 0.210 + 0.052*SL 0.199 + 0.053*SL
tPLH 0.249 0.177 + 0.036*SL 0.179 + 0.035*SL 0.181 + 0.035*SL
tPHL 0.220 0.164 + 0.028*SL 0.167 + 0.027*SL 0.170 + 0.027*SL
S to YN1 tR 0.337 0.187 + 0.075*SL 0.178 + 0.077*SL 0.172 + 0.078*SL
tF 0.269 0.164 + 0.053*SL 0.162 + 0.053*SL 0.154 + 0.054*SL
tPLH 0.345 0.275 + 0.035*SL 0.276 + 0.035*SL 0.275 + 0.035*SL
tPHL 0.287 0.229 + 0.029*SL 0.236 + 0.027*SL 0.240 + 0.027*SL
D02 to
YN2 tR 0.348 0.199 + 0.074*SL 0.189 + 0.077*SL 0.176 + 0.078*SL
tF 0.253 0.155 + 0.049*SL 0.143 + 0.052*SL 0.131 + 0.053*SL
tPLH 0.204 0.134 + 0.035*SL 0.133 + 0.035*SL 0.134 + 0.035*SL
tPHL 0.161 0.104 + 0.028*SL 0.110 + 0.027*SL 0.111 + 0.027*SL
D12 to
YN2 tR 0.342 0.191 + 0.076*SL 0.184 + 0.077*SL 0.177 + 0.078*SL
tF 0.318 0.219 + 0.049*SL 0.209 + 0.052*SL 0.198 + 0.053*SL
tPLH 0.249 0.176 + 0.036*SL 0.179 + 0.036*SL 0.181 + 0.035*SL
tPHL 0.219 0.163 + 0.028*SL 0.166 + 0.027*SL 0.169 + 0.027*SL
S to YN2 tR 0.339 0.188 + 0.075*SL 0.179 + 0.077*SL 0.174 + 0.078*SL
tF 0.268 0.163 + 0.053*SL 0.160 + 0.053*SL 0.153 + 0.054*SL
tPLH 0.346 0.276 + 0.035*SL 0.277 + 0.035*SL 0.276 + 0.035*SL
tPHL 0.287 0.230 + 0.029*SL 0.237 + 0.027*SL 0.241 + 0.027*SL
D03 to
YN3 tR 0.348 0.199 + 0.074*SL 0.189 + 0.077*SL 0.176 + 0.079*SL
tF 0.253 0.155 + 0.049*SL 0.143 + 0.052*SL 0.130 + 0.053*SL
tPLH 0.204 0.133 + 0.035*SL 0.133 + 0.036*SL 0.133 + 0.035*SL
tPHL 0.160 0.104 + 0.028*SL 0.109 + 0.027*SL 0.111 + 0.027*SL
Samsung ASIC 3-479 STDM110
MX2IX4
4-Bit 2 > 1 Inverting MUX
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX2IX4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D13 to
YN3 tR 0.340 0.190 + 0.075*SL 0.182 + 0.077*SL 0.176 + 0.078*SL
tF 0.318 0.219 + 0.049*SL 0.209 + 0.052*SL 0.197 + 0.053*SL
tPLH 0.248 0.176 + 0.036*SL 0.178 + 0.035*SL 0.180 + 0.035*SL
tPHL 0.219 0.163 + 0.028*SL 0.166 + 0.027*SL 0.169 + 0.027*SL
S to YN3 tR 0.335 0.181 + 0.077*SL 0.176 + 0.078*SL 0.169 + 0.079*SL
tF 0.268 0.162 + 0.053*SL 0.160 + 0.053*SL 0.152 + 0.054*SL
tPLH 0.346 0.276 + 0.035*SL 0.276 + 0.035*SL 0.276 + 0.035*SL
tPHL 0.287 0.229 + 0.029*SL 0.237 + 0.027*SL 0.241 + 0.027*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-480 Samsung ASIC
MX3I/MX3ID2/MX3ID4
3 > 1 Inverting MUX with 1X/2X/4X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL)
MX3I MX3ID2 MX3ID4
D0 D1 D2 S0 S1 D0 D1 D2 S0 S1 D0 D1 D2 S0 S1
0.8 0.8 0.8 1.0 1.0 0.8 0.8 0.8 1.0 1.0 0.8 0.8 0.8 1.0 1.0
Gate Count
MX3I MX3ID2 MX3ID4
5.00 5.33 6.00
D0
D1
D2
YN
S0 S1
D0
D1
S0
S1
D2
YN
Truth Table
S0 S1 YN
00D0
10D1
x1D2
Samsung ASIC 3-481 STDM110
MX3I/MX3ID2/MX3ID4
3 > 1 Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX3I
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.154 0.083 + 0.036*SL 0.074 + 0.038*SL 0.067 + 0.039*SL
tF 0.130 0.069 + 0.030*SL 0.067 + 0.031*SL 0.061 + 0.032*SL
tPLH 0.522 0.483 + 0.020*SL 0.490 + 0.018*SL 0.492 + 0.018*SL
tPHL 0.505 0.466 + 0.020*SL 0.475 + 0.017*SL 0.480 + 0.017*SL
D1 to YN tR 0.154 0.083 + 0.036*SL 0.074 + 0.038*SL 0.066 + 0.039*SL
tF 0.130 0.069 + 0.031*SL 0.067 + 0.031*SL 0.062 + 0.032*SL
tPLH 0.526 0.486 + 0.020*SL 0.494 + 0.018*SL 0.496 + 0.018*SL
tPHL 0.500 0.460 + 0.020*SL 0.470 + 0.017*SL 0.475 + 0.017*SL
D2 to YN tR 0.145 0.071 + 0.037*SL 0.066 + 0.038*SL 0.059 + 0.039*SL
tF 0.125 0.064 + 0.031*SL 0.060 + 0.031*SL 0.056 + 0.032*SL
tPLH 0.365 0.327 + 0.019*SL 0.332 + 0.018*SL 0.334 + 0.018*SL
tPHL 0.350 0.311 + 0.019*SL 0.319 + 0.017*SL 0.323 + 0.017*SL
S0 to YN tR 0.154 0.083 + 0.036*SL 0.074 + 0.038*SL 0.067 + 0.039*SL
tF 0.130 0.069 + 0.031*SL 0.067 + 0.031*SL 0.062 + 0.032*SL
tPLH 0.533 0.494 + 0.020*SL 0.501 + 0.018*SL 0.503 + 0.018*SL
tPHL 0.541 0.501 + 0.020*SL 0.511 + 0.017*SL 0.515 + 0.017*SL
S1 to YN tR 0.148 0.075 + 0.037*SL 0.070 + 0.038*SL 0.062 + 0.039*SL
tF 0.129 0.068 + 0.030*SL 0.066 + 0.031*SL 0.059 + 0.032*SL
tPLH 0.388 0.349 + 0.020*SL 0.356 + 0.018*SL 0.358 + 0.018*SL
tPHL 0.430 0.391 + 0.020*SL 0.400 + 0.017*SL 0.405 + 0.017*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-482 Samsung ASIC
MX3I/MX3ID2/MX3ID4
3 > 1 Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX3ID2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.117 0.081 + 0.018*SL 0.081 + 0.018*SL 0.070 + 0.019*SL
tF 0.102 0.069 + 0.016*SL 0.074 + 0.015*SL 0.070 + 0.016*SL
tPLH 0.540 0.515 + 0.013*SL 0.526 + 0.010*SL 0.536 + 0.009*SL
tPHL 0.520 0.494 + 0.013*SL 0.506 + 0.010*SL 0.520 + 0.009*SL
D1 to YN tR 0.117 0.081 + 0.018*SL 0.079 + 0.018*SL 0.070 + 0.019*SL
tF 0.101 0.068 + 0.017*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.543 0.518 + 0.013*SL 0.530 + 0.010*SL 0.540 + 0.009*SL
tPHL 0.515 0.489 + 0.013*SL 0.501 + 0.010*SL 0.515 + 0.009*SL
D2 to YN tR 0.106 0.070 + 0.018*SL 0.069 + 0.018*SL 0.058 + 0.019*SL
tF 0.096 0.064 + 0.016*SL 0.066 + 0.015*SL 0.063 + 0.016*SL
tPLH 0.374 0.351 + 0.012*SL 0.360 + 0.009*SL 0.368 + 0.009*SL
tPHL 0.358 0.333 + 0.013*SL 0.345 + 0.010*SL 0.357 + 0.009*SL
S0 to YN tR 0.118 0.082 + 0.018*SL 0.082 + 0.018*SL 0.069 + 0.019*SL
tF 0.103 0.071 + 0.016*SL 0.074 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.551 0.526 + 0.013*SL 0.537 + 0.010*SL 0.547 + 0.009*SL
tPHL 0.555 0.529 + 0.013*SL 0.542 + 0.010*SL 0.556 + 0.009*SL
S1 to YN tR 0.113 0.077 + 0.018*SL 0.076 + 0.018*SL 0.066 + 0.019*SL
tF 0.102 0.070 + 0.016*SL 0.073 + 0.015*SL 0.069 + 0.016*SL
tPLH 0.403 0.378 + 0.012*SL 0.389 + 0.010*SL 0.398 + 0.009*SL
tPHL 0.444 0.418 + 0.013*SL 0.431 + 0.010*SL 0.445 + 0.009*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-483 STDM110
MX3I/MX3ID2/MX3ID4
3 > 1 Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX3ID4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to YN tR 0.112 0.092 + 0.010*SL 0.096 + 0.009*SL 0.087 + 0.009*SL
tF 0.094 0.075 + 0.009*SL 0.081 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.594 0.579 + 0.008*SL 0.588 + 0.006*SL 0.607 + 0.005*SL
tPHL 0.550 0.535 + 0.008*SL 0.543 + 0.006*SL 0.564 + 0.004*SL
D1 to YN tR 0.111 0.090 + 0.010*SL 0.096 + 0.009*SL 0.088 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.080 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.598 0.582 + 0.008*SL 0.591 + 0.006*SL 0.610 + 0.005*SL
tPHL 0.545 0.529 + 0.008*SL 0.538 + 0.006*SL 0.559 + 0.004*SL
D2 to YN tR 0.099 0.079 + 0.010*SL 0.083 + 0.009*SL 0.074 + 0.009*SL
tF 0.087 0.069 + 0.009*SL 0.073 + 0.008*SL 0.075 + 0.008*SL
tPLH 0.413 0.399 + 0.007*SL 0.407 + 0.005*SL 0.422 + 0.004*SL
tPHL 0.380 0.365 + 0.007*SL 0.374 + 0.005*SL 0.393 + 0.004*SL
S0 to YN tR 0.112 0.092 + 0.010*SL 0.096 + 0.009*SL 0.087 + 0.009*SL
tF 0.094 0.076 + 0.009*SL 0.083 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.605 0.589 + 0.008*SL 0.598 + 0.006*SL 0.617 + 0.005*SL
tPHL 0.585 0.570 + 0.008*SL 0.578 + 0.006*SL 0.599 + 0.004*SL
S1 to YN tR 0.108 0.088 + 0.010*SL 0.092 + 0.009*SL 0.085 + 0.009*SL
tF 0.093 0.074 + 0.010*SL 0.082 + 0.008*SL 0.082 + 0.008*SL
tPLH 0.459 0.444 + 0.008*SL 0.453 + 0.005*SL 0.471 + 0.005*SL
tPHL 0.473 0.457 + 0.008*SL 0.466 + 0.006*SL 0.487 + 0.004*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-484 Samsung ASIC
MX4/MX4D2/MX4D4
4 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Logic Symbol
Cell Data
Schematic Diagram
Input Load (SL)
MX4 MX4D2 MX4D4
D0 D1 D2 D3 S0 S1 D0 D1 D2 D3 S0 S1 D0 D1 D2 D3 S0 S1
0.8 0.8 0.8 0.8 1.9 1.0 0.8 0.8 0.8 0.8 1.9 1.0 0.8 0.8 0.8 0.8 1.9 1.0
Gate Count
MX4 MX4
D2
MX4
D4
5.67 6.00 6.67
Y
D0
D1
D2
D3 S0 S1
S0B
S0 S0
S1B
S1 S1
D0
D1
D2
D3
Y
S0
S0
S0B
S0
S0B
S1
S1B
S1B
S1
Truth Table
S0 S1 Y
00D0
10D1
01D2
11D3
Samsung ASIC 3-485 STDM110
MX4/MX4D2/MX4D4
4 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.205 0.124 + 0.041*SL 0.136 + 0.038*SL 0.137 + 0.038*SL
tF 0.233 0.154 + 0.039*SL 0.173 + 0.035*SL 0.186 + 0.033*SL
tPLH 0.431 0.377 + 0.027*SL 0.397 + 0.022*SL 0.416 + 0.019*SL
tPHL 0.479 0.415 + 0.032*SL 0.442 + 0.025*SL 0.470 + 0.022*SL
D1 to Y tR 0.205 0.124 + 0.041*SL 0.136 + 0.038*SL 0.136 + 0.038*SL
tF 0.232 0.154 + 0.039*SL 0.172 + 0.035*SL 0.186 + 0.033*SL
tPLH 0.430 0.376 + 0.027*SL 0.396 + 0.022*SL 0.415 + 0.019*SL
tPHL 0.480 0.416 + 0.032*SL 0.443 + 0.025*SL 0.471 + 0.022*SL
D2 to Y tR 0.204 0.123 + 0.040*SL 0.135 + 0.038*SL 0.136 + 0.038*SL
tF 0.229 0.151 + 0.039*SL 0.170 + 0.034*SL 0.182 + 0.033*SL
tPLH 0.424 0.370 + 0.027*SL 0.390 + 0.022*SL 0.409 + 0.019*SL
tPHL 0.475 0.411 + 0.032*SL 0.438 + 0.025*SL 0.465 + 0.022*SL
D3 to Y tR 0.204 0.124 + 0.040*SL 0.134 + 0.038*SL 0.136 + 0.038*SL
tF 0.230 0.152 + 0.039*SL 0.170 + 0.034*SL 0.182 + 0.033*SL
tPLH 0.421 0.367 + 0.027*SL 0.388 + 0.022*SL 0.406 + 0.019*SL
tPHL 0.476 0.413 + 0.032*SL 0.439 + 0.025*SL 0.467 + 0.022*SL
S0 to Y tR 0.206 0.125 + 0.041*SL 0.138 + 0.038*SL 0.138 + 0.038*SL
tF 0.232 0.153 + 0.039*SL 0.173 + 0.034*SL 0.186 + 0.033*SL
tPLH 0.470 0.416 + 0.027*SL 0.437 + 0.022*SL 0.456 + 0.019*SL
tPHL 0.497 0.434 + 0.032*SL 0.460 + 0.025*SL 0.489 + 0.022*SL
S1 to Y tR 0.197 0.115 + 0.041*SL 0.127 + 0.038*SL 0.130 + 0.038*SL
tF 0.211 0.131 + 0.040*SL 0.150 + 0.035*SL 0.167 + 0.033*SL
tPLH 0.346 0.293 + 0.026*SL 0.312 + 0.022*SL 0.330 + 0.019*SL
tPHL 0.365 0.303 + 0.031*SL 0.328 + 0.025*SL 0.355 + 0.021*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 8, *Group3 : 8 < SL
STDM110 3-486 Samsung ASIC
MX4/MX4D2/MX4D4
4 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX4D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.176 0.131 + 0.023*SL 0.140 + 0.020*SL 0.157 + 0.019*SL
tF 0.217 0.171 + 0.023*SL 0.186 + 0.019*SL 0.212 + 0.017*SL
tPLH 0.457 0.422 + 0.018*SL 0.440 + 0.013*SL 0.471 + 0.011*SL
tPHL 0.512 0.469 + 0.022*SL 0.492 + 0.016*SL 0.534 + 0.012*SL
D1 to Y tR 0.176 0.130 + 0.023*SL 0.140 + 0.020*SL 0.156 + 0.019*SL
tF 0.216 0.170 + 0.023*SL 0.185 + 0.019*SL 0.212 + 0.017*SL
tPLH 0.456 0.421 + 0.018*SL 0.439 + 0.013*SL 0.470 + 0.011*SL
tPHL 0.513 0.470 + 0.021*SL 0.493 + 0.016*SL 0.535 + 0.012*SL
D2 to Y tR 0.176 0.130 + 0.023*SL 0.140 + 0.020*SL 0.156 + 0.019*SL
tF 0.214 0.168 + 0.023*SL 0.182 + 0.019*SL 0.210 + 0.017*SL
tPLH 0.450 0.415 + 0.018*SL 0.432 + 0.013*SL 0.464 + 0.011*SL
tPHL 0.508 0.465 + 0.021*SL 0.488 + 0.016*SL 0.529 + 0.012*SL
D3 to Y tR 0.175 0.129 + 0.023*SL 0.141 + 0.020*SL 0.155 + 0.019*SL
tF 0.214 0.169 + 0.023*SL 0.183 + 0.019*SL 0.210 + 0.017*SL
tPLH 0.447 0.412 + 0.018*SL 0.430 + 0.013*SL 0.461 + 0.011*SL
tPHL 0.510 0.467 + 0.021*SL 0.490 + 0.016*SL 0.531 + 0.012*SL
S0 to Y tR 0.177 0.132 + 0.023*SL 0.141 + 0.020*SL 0.158 + 0.019*SL
tF 0.215 0.169 + 0.023*SL 0.183 + 0.020*SL 0.212 + 0.017*SL
tPLH 0.496 0.460 + 0.018*SL 0.478 + 0.013*SL 0.510 + 0.011*SL
tPHL 0.529 0.486 + 0.021*SL 0.509 + 0.016*SL 0.551 + 0.012*SL
S1 to Y tR 0.171 0.125 + 0.023*SL 0.136 + 0.020*SL 0.152 + 0.019*SL
tF 0.203 0.156 + 0.023*SL 0.171 + 0.020*SL 0.201 + 0.017*SL
tPLH 0.368 0.332 + 0.018*SL 0.350 + 0.013*SL 0.382 + 0.011*SL
tPHL 0.398 0.356 + 0.021*SL 0.378 + 0.016*SL 0.420 + 0.012*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 11, *Group3 : 11 < SL
Samsung ASIC 3-487 STDM110
MX4/MX4D2/MX4D4
4 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX4D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.211 0.187 + 0.012*SL 0.191 + 0.011*SL 0.216 + 0.010*SL
tF 0.273 0.246 + 0.013*SL 0.256 + 0.011*SL 0.289 + 0.009*SL
tPLH 0.565 0.541 + 0.012*SL 0.555 + 0.008*SL 0.597 + 0.006*SL
tPHL 0.648 0.620 + 0.014*SL 0.636 + 0.010*SL 0.688 + 0.007*SL
D1 to Y tR 0.211 0.188 + 0.012*SL 0.190 + 0.011*SL 0.216 + 0.010*SL
tF 0.271 0.245 + 0.013*SL 0.255 + 0.011*SL 0.288 + 0.009*SL
tPLH 0.564 0.540 + 0.012*SL 0.554 + 0.008*SL 0.596 + 0.006*SL
tPHL 0.648 0.621 + 0.014*SL 0.637 + 0.010*SL 0.688 + 0.007*SL
D2 to Y tR 0.211 0.186 + 0.012*SL 0.191 + 0.011*SL 0.215 + 0.010*SL
tF 0.271 0.244 + 0.013*SL 0.255 + 0.011*SL 0.286 + 0.009*SL
tPLH 0.557 0.534 + 0.012*SL 0.548 + 0.008*SL 0.589 + 0.006*SL
tPHL 0.643 0.616 + 0.014*SL 0.632 + 0.010*SL 0.683 + 0.007*SL
D3 to Y tR 0.211 0.187 + 0.012*SL 0.191 + 0.011*SL 0.214 + 0.010*SL
tF 0.271 0.244 + 0.013*SL 0.255 + 0.011*SL 0.286 + 0.009*SL
tPLH 0.555 0.531 + 0.012*SL 0.545 + 0.008*SL 0.587 + 0.006*SL
tPHL 0.645 0.618 + 0.014*SL 0.634 + 0.010*SL 0.685 + 0.007*SL
S0 to Y tR 0.212 0.187 + 0.012*SL 0.192 + 0.011*SL 0.217 + 0.010*SL
tF 0.273 0.246 + 0.013*SL 0.256 + 0.011*SL 0.289 + 0.009*SL
tPLH 0.602 0.578 + 0.012*SL 0.592 + 0.008*SL 0.634 + 0.006*SL
tPHL 0.665 0.638 + 0.014*SL 0.654 + 0.010*SL 0.706 + 0.007*SL
S1 to Y tR 0.210 0.187 + 0.012*SL 0.189 + 0.011*SL 0.214 + 0.010*SL
tF 0.270 0.243 + 0.013*SL 0.253 + 0.011*SL 0.284 + 0.009*SL
tPLH 0.470 0.447 + 0.012*SL 0.460 + 0.008*SL 0.502 + 0.006*SL
tPHL 0.538 0.510 + 0.014*SL 0.526 + 0.010*SL 0.578 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL
< <
= = 19, *Group3 : 19 < SL
STDM110 3-488 Samsung ASIC
MX8/MX8D2/MX8D4
8 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Logic Symbol
Cell Data Input Load (SL) Gate Count
MX8 MX8
D0 D1 D2 D3 D4 D5 D6 D7 S0 S1 S2
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.8 1.0 10.67
MX8D2 MX8D2
D0 D1 D2 D3 D4 D5 D6 D7 S0 S1 S2
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.8 1.0 11.00
MX8D4 MX8D4
D0 D1 D2 D3 D4 D5 D6 D7 S0 S1 S2
0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.8 1.1 11.67
Y
D0
D1
D2
D3
D4
D5
D6
D7 S0 S1 S2
Truth Table
S0 S1 S2 Y
000D0
100D1
010D2
110D3
001D4
101D5
011D6
111D7
Samsung ASIC 3-489 STDM110
MX8/MX8D2/MX8D4
8 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Schematic Diagram
D0
D1
D2
D3
S0
S0B
S0
S0B
S0
S0 S0B
S1B
S1 S1
S0
S1B
S1
S1
S1B S2B
S2
Y
D4
D5
D6
D7
S0
S0B
S0
S0B
S1B
S1
S1
S1B S2
S2B
S2B
S2 S2
STDM110 3-490 Samsung ASIC
MX8/MX8D2/MX8D4
8 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX8
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.238 0.155 + 0.042*SL 0.170 + 0.038*SL 0.181 + 0.037*SL
tF 0.299 0.219 + 0.040*SL 0.240 + 0.035*SL 0.261 + 0.032*SL
tPLH 0.616 0.557 + 0.029*SL 0.579 + 0.024*SL 0.604 + 0.021*SL
tPHL 0.730 0.658 + 0.036*SL 0.690 + 0.028*SL 0.724 + 0.023*SL
D1 to Y tR 0.238 0.155 + 0.042*SL 0.170 + 0.038*SL 0.180 + 0.037*SL
tF 0.299 0.218 + 0.040*SL 0.240 + 0.035*SL 0.261 + 0.032*SL
tPLH 0.616 0.558 + 0.029*SL 0.580 + 0.024*SL 0.604 + 0.021*SL
tPHL 0.731 0.659 + 0.036*SL 0.691 + 0.028*SL 0.725 + 0.023*SL
D2 to Y tR 0.238 0.154 + 0.042*SL 0.170 + 0.038*SL 0.178 + 0.037*SL
tF 0.295 0.216 + 0.040*SL 0.236 + 0.035*SL 0.256 + 0.032*SL
tPLH 0.604 0.545 + 0.029*SL 0.568 + 0.024*SL 0.592 + 0.020*SL
tPHL 0.720 0.648 + 0.036*SL 0.679 + 0.028*SL 0.714 + 0.023*SL
D3 to Y tR 0.238 0.154 + 0.042*SL 0.170 + 0.038*SL 0.178 + 0.037*SL
tF 0.295 0.216 + 0.040*SL 0.236 + 0.035*SL 0.256 + 0.032*SL
tPLH 0.603 0.545 + 0.029*SL 0.567 + 0.024*SL 0.591 + 0.020*SL
tPHL 0.720 0.649 + 0.036*SL 0.680 + 0.028*SL 0.714 + 0.023*SL
D4 to Y tR 0.237 0.153 + 0.042*SL 0.169 + 0.038*SL 0.178 + 0.037*SL
tF 0.294 0.214 + 0.040*SL 0.235 + 0.035*SL 0.256 + 0.032*SL
tPLH 0.599 0.541 + 0.029*SL 0.563 + 0.024*SL 0.587 + 0.020*SL
tPHL 0.715 0.644 + 0.035*SL 0.675 + 0.028*SL 0.709 + 0.023*SL
D5 to Y tR 0.237 0.153 + 0.042*SL 0.169 + 0.038*SL 0.178 + 0.037*SL
tF 0.294 0.214 + 0.040*SL 0.235 + 0.035*SL 0.256 + 0.032*SL
tPLH 0.599 0.541 + 0.029*SL 0.563 + 0.024*SL 0.587 + 0.020*SL
tPHL 0.715 0.644 + 0.035*SL 0.675 + 0.028*SL 0.709 + 0.023*SL
D6 to Y tR 0.236 0.153 + 0.042*SL 0.167 + 0.038*SL 0.177 + 0.037*SL
tF 0.293 0.214 + 0.040*SL 0.234 + 0.035*SL 0.254 + 0.032*SL
tPLH 0.593 0.535 + 0.029*SL 0.557 + 0.024*SL 0.581 + 0.020*SL
tPHL 0.711 0.641 + 0.035*SL 0.671 + 0.028*SL 0.705 + 0.023*SL
D7 to Y tR 0.236 0.153 + 0.042*SL 0.167 + 0.038*SL 0.177 + 0.037*SL
tF 0.293 0.214 + 0.040*SL 0.234 + 0.035*SL 0.254 + 0.032*SL
tPLH 0.593 0.535 + 0.029*SL 0.557 + 0.024*SL 0.581 + 0.020*SL
tPHL 0.711 0.641 + 0.035*SL 0.671 + 0.028*SL 0.705 + 0.023*SL
S0 to Y tR 0.240 0.157 + 0.042*SL 0.172 + 0.038*SL 0.180 + 0.037*SL
tF 0.295 0.216 + 0.040*SL 0.235 + 0.035*SL 0.255 + 0.032*SL
tPLH 0.864 0.806 + 0.029*SL 0.829 + 0.024*SL 0.853 + 0.020*SL
tPHL 0.974 0.903 + 0.035*SL 0.934 + 0.028*SL 0.968 + 0.023*SL
S1 to Y tR 0.234 0.150 + 0.042*SL 0.166 + 0.038*SL 0.174 + 0.037*SL
tF 0.282 0.202 + 0.040*SL 0.221 + 0.035*SL 0.242 + 0.032*SL
tPLH 0.504 0.446 + 0.029*SL 0.468 + 0.024*SL 0.492 + 0.020*SL
tPHL 0.551 0.481 + 0.035*SL 0.511 + 0.028*SL 0.545 + 0.023*SL
Samsung ASIC 3-491 STDM110
MX8/MX8D2/MX8D4
8 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX8D2
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.216 0.170 + 0.023*SL 0.178 + 0.021*SL 0.201 + 0.019*SL
tF 0.293 0.245 + 0.024*SL 0.263 + 0.020*SL 0.292 + 0.017*SL
tPLH 0.660 0.622 + 0.019*SL 0.641 + 0.015*SL 0.676 + 0.011*SL
tPHL 0.786 0.739 + 0.024*SL 0.765 + 0.017*SL 0.812 + 0.013*SL
D1 to Y tR 0.216 0.170 + 0.023*SL 0.178 + 0.021*SL 0.201 + 0.019*SL
tF 0.293 0.245 + 0.024*SL 0.263 + 0.020*SL 0.292 + 0.017*SL
tPLH 0.661 0.622 + 0.019*SL 0.641 + 0.015*SL 0.676 + 0.011*SL
tPHL 0.787 0.740 + 0.024*SL 0.766 + 0.017*SL 0.813 + 0.013*SL
D2 to Y tR 0.215 0.169 + 0.023*SL 0.178 + 0.021*SL 0.201 + 0.019*SL
tF 0.290 0.242 + 0.024*SL 0.259 + 0.020*SL 0.289 + 0.017*SL
tPLH 0.648 0.610 + 0.019*SL 0.629 + 0.015*SL 0.664 + 0.011*SL
tPHL 0.776 0.728 + 0.024*SL 0.754 + 0.017*SL 0.801 + 0.013*SL
D3 to Y tR 0.215 0.169 + 0.023*SL 0.178 + 0.021*SL 0.201 + 0.019*SL
tF 0.290 0.242 + 0.024*SL 0.259 + 0.020*SL 0.289 + 0.017*SL
tPLH 0.648 0.609 + 0.019*SL 0.629 + 0.015*SL 0.663 + 0.011*SL
tPHL 0.776 0.728 + 0.024*SL 0.754 + 0.017*SL 0.801 + 0.013*SL
D4 to Y tR 0.215 0.168 + 0.023*SL 0.177 + 0.021*SL 0.200 + 0.019*SL
tF 0.289 0.242 + 0.023*SL 0.258 + 0.020*SL 0.288 + 0.017*SL
tPLH 0.644 0.605 + 0.019*SL 0.625 + 0.014*SL 0.659 + 0.011*SL
tPHL 0.772 0.725 + 0.024*SL 0.751 + 0.017*SL 0.797 + 0.013*SL
D5 to Y tR 0.215 0.168 + 0.023*SL 0.177 + 0.021*SL 0.200 + 0.019*SL
tF 0.289 0.242 + 0.023*SL 0.258 + 0.020*SL 0.288 + 0.017*SL
tPLH 0.644 0.605 + 0.019*SL 0.624 + 0.014*SL 0.659 + 0.011*SL
tPHL 0.772 0.725 + 0.024*SL 0.751 + 0.017*SL 0.798 + 0.013*SL
D6 to Y tR 0.214 0.167 + 0.023*SL 0.176 + 0.021*SL 0.199 + 0.019*SL
tF 0.288 0.241 + 0.024*SL 0.257 + 0.019*SL 0.287 + 0.017*SL
tPLH 0.638 0.600 + 0.019*SL 0.619 + 0.014*SL 0.654 + 0.011*SL
tPHL 0.769 0.721 + 0.024*SL 0.747 + 0.017*SL 0.794 + 0.013*SL
D7 to Y tR 0.213 0.167 + 0.023*SL 0.176 + 0.021*SL 0.199 + 0.019*SL
tF 0.288 0.241 + 0.024*SL 0.257 + 0.019*SL 0.287 + 0.017*SL
tPLH 0.638 0.600 + 0.019*SL 0.619 + 0.014*SL 0.654 + 0.011*SL
tPHL 0.769 0.721 + 0.024*SL 0.747 + 0.017*SL 0.794 + 0.013*SL
S0 to Y tR 0.216 0.169 + 0.023*SL 0.179 + 0.021*SL 0.201 + 0.019*SL
tF 0.289 0.241 + 0.024*SL 0.259 + 0.019*SL 0.288 + 0.017*SL
tPLH 0.909 0.871 + 0.019*SL 0.890 + 0.014*SL 0.925 + 0.011*SL
tPHL 1.031 0.983 + 0.024*SL 1.010 + 0.017*SL 1.056 + 0.013*SL
S1 to Y tR 0.213 0.166 + 0.023*SL 0.176 + 0.021*SL 0.198 + 0.019*SL
tF 0.280 0.232 + 0.024*SL 0.251 + 0.020*SL 0.280 + 0.017*SL
tPLH 0.548 0.510 + 0.019*SL 0.529 + 0.014*SL 0.564 + 0.011*SL
tPHL 0.608 0.561 + 0.024*SL 0.587 + 0.017*SL 0.633 + 0.013*SL
STDM110 3-492 Samsung ASIC
MX8/MX8D2/MX8D4
8 > 1 Non-Inverting MUX with 1X/2X/4X Drive
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.27ns, SL: Standard Load)
MX8D4
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
D0 to Y tR 0.269 0.245 + 0.012*SL 0.247 + 0.011*SL 0.269 + 0.010*SL
tF 0.372 0.346 + 0.013*SL 0.354 + 0.011*SL 0.389 + 0.009*SL
tPLH 0.802 0.777 + 0.012*SL 0.792 + 0.009*SL 0.836 + 0.007*SL
tPHL 0.968 0.938 + 0.015*SL 0.955 + 0.011*SL 1.012 + 0.008*SL
D1 to Y tR 0.269 0.245 + 0.012*SL 0.247 + 0.011*SL 0.269 + 0.010*SL
tF 0.372 0.346 + 0.013*SL 0.354 + 0.011*SL 0.389 + 0.009*SL
tPLH 0.803 0.778 + 0.012*SL 0.792 + 0.009*SL 0.836 + 0.007*SL
tPHL 0.968 0.939 + 0.015*SL 0.956 + 0.011*SL 1.013 + 0.008*SL
D2 to Y tR 0.267 0.243 + 0.012*SL 0.247 + 0.011*SL 0.269 + 0.010*SL
tF 0.371 0.344 + 0.013*SL 0.353 + 0.011*SL 0.386 + 0.009*SL
tPLH 0.790 0.765 + 0.012*SL 0.780 + 0.009*SL 0.824 + 0.007*SL
tPHL 0.957 0.928 + 0.015*SL 0.944 + 0.011*SL 1.001 + 0.008*SL
D3 to Y tR 0.267 0.243 + 0.012*SL 0.247 + 0.011*SL 0.269 + 0.010*SL
tF 0.371 0.344 + 0.013*SL 0.354 + 0.011*SL 0.386 + 0.009*SL
tPLH 0.790 0.765 + 0.012*SL 0.780 + 0.009*SL 0.823 + 0.007*SL
tPHL 0.957 0.928 + 0.015*SL 0.944 + 0.011*SL 1.001 + 0.008*SL
D4 to Y tR 0.267 0.244 + 0.012*SL 0.246 + 0.011*SL 0.268 + 0.010*SL
tF 0.369 0.343 + 0.013*SL 0.352 + 0.011*SL 0.386 + 0.009*SL
tPLH 0.786 0.761 + 0.012*SL 0.776 + 0.009*SL 0.819 + 0.007*SL
tPHL 0.954 0.924 + 0.015*SL 0.941 + 0.011*SL 0.998 + 0.008*SL
D5 to Y tR 0.267 0.244 + 0.012*SL 0.246 + 0.011*SL 0.268 + 0.010*SL
tF 0.370 0.343 + 0.013*SL 0.352 + 0.011*SL 0.386 + 0.009*SL
tPLH 0.786 0.761 + 0.012*SL 0.775 + 0.009*SL 0.819 + 0.007*SL
tPHL 0.954 0.924 + 0.015*SL 0.941 + 0.011*SL 0.998 + 0.008*SL
D6 to Y tR 0.267 0.243 + 0.012*SL 0.245 + 0.011*SL 0.267 + 0.010*SL
tF 0.368 0.342 + 0.013*SL 0.350 + 0.011*SL 0.385 + 0.009*SL
tPLH 0.780 0.755 + 0.012*SL 0.770 + 0.009*SL 0.813 + 0.007*SL
tPHL 0.950 0.921 + 0.015*SL 0.937 + 0.011*SL 0.994 + 0.008*SL
D7 to Y tR 0.267 0.243 + 0.012*SL 0.245 + 0.011*SL 0.267 + 0.010*SL
tF 0.368 0.342 + 0.013*SL 0.350 + 0.011*SL 0.385 + 0.009*SL
tPLH 0.780 0.755 + 0.012*SL 0.770 + 0.009*SL 0.813 + 0.007*SL
tPHL 0.950 0.921 + 0.015*SL 0.937 + 0.011*SL 0.994 + 0.008*SL
S0 to Y tR 0.268 0.244 + 0.012*SL 0.247 + 0.011*SL 0.269 + 0.010*SL
tF 0.370 0.343 + 0.013*SL 0.352 + 0.011*SL 0.385 + 0.009*SL
tPLH 1.052 1.027 + 0.012*SL 1.042 + 0.009*SL 1.085 + 0.007*SL
tPHL 1.213 1.184 + 0.015*SL 1.200 + 0.011*SL 1.258 + 0.008*SL
S1 to Y tR 0.266 0.242 + 0.012*SL 0.245 + 0.011*SL 0.267 + 0.010*SL
tF 0.366 0.340 + 0.013*SL 0.348 + 0.011*SL 0.382 + 0.009*SL
tPLH 0.690 0.666 + 0.012*SL 0.680 + 0.009*SL 0.724 + 0.007*SL
tPHL 0.790 0.761 + 0.015*SL 0.778 + 0.011*SL 0.834 + 0.008*SL
4
Input/Output Cells
Contents
Overview...............................................................................................................................4-1
Summary Tables...................................................................................................................4-2
Input Buffers .........................................................................................................................4-7
Output Buffers.......................................................................................................................4-19
Bi-Directional Buffers............................................................................................................4-58
Oscillators.............................................................................................................................4-60
PCI Buffers ...........................................................................................................................4-76
USB (Universal Serial Bus) I/O Buffers ................................................................................4-81
Power Pads...........................................................................................................................4-92
Analog Interface....................................................................................................................4-93
Slot Cells ..............................................................................................................................4-100
INPUT/OUTPUT CELLS OVERVIEW
Samsung ASIC 4-1 STDM110
OVERVIEW
The fourth chapter describes various kinds of Input/Output cells only (2.5V/ 3.3V/ 5V-tolerant) in STDM110
library.
The switching characteristics of each cell are attached to its basic cell information. The AC characteristics of
bi-directional buffers are not included in this data sheet. However, they can be derived from different
combinations of input and output buffers.
There are so many possible combinations of input/output cells, therefore, the naming conventions are
adopted to help you memorize and use this cell library efficiently. You can refer to the naming conventions
contained in “Summary Tables” section.
The “Summary Tables” section shows the list of 2.5V, 3.3V interface and 5V-tolerant I/O cells separated by
the category (input, output, bi-directional, etc.), and the more detailed description tables can be found on the
leading part of each category.
All 1.8V, 2.5V, 3.3V-interface and 5V-tolerant buffers use 1 I/O slot. The default pitch of a regular I/O buffer is
52 µm. All 2.5V, 3.3V-interface and 5V-tolerant buffers use this regular I/O slot if the data sheet do not state
differently.
NOTE: When both A and B driving signals do not exist, SEC tolerant IO’s pad voltage goes high state. However, those
5V tolerant input and bi-directional cells with 100kΩpull-up resistor have NMOS pass transistor like Figure 4.1.
Therefore, pad voltage of 5V tolerant IO for 3.3V interface could be 1.7V instead of VDD.
Figure 4-1.
Y
PO
PI
VDD
PAD
B
A
TN
EN
A
SUMMARY TABLES INPUT/OUTPUT CELLS
STDM110 4-2 Samsung ASIC
SUMMARY TABLES
Input Buffers
<Naming Convention of Input Buffers>
Output Buffers
Cell Type Cell Name Page
CMOS Level PIC/PICD/PICU 4-8
PHIC/PHICD/PHICU
PTIC/PTICD/PTICU
CMOS Schmitt Trigger Level PIS/PISD/PISU 4-12
PHIS/PHISD/PHISU
PTIS/PTISD/PTISU
LVTTL Level PHIT/PHITD/PHITU 4-16
PTIT/PTITD/PTITU
Pvlab
va b
None 2.5V interface C CMOS level None No resistor
H 3.3V interface S Schmitt trigger level D Pull-down resistor
T 5V-tolerant T LVTTL level U Pull-up resistor
Cell Type Cell Name Current Drive (mA) Page
Normal POBy 1/2/4/6/8/10/12 4-20
POBySM 4/6/8/10/12
POBySH 10/12
PHOBy 1/2/4/6/8/10/12
PHOBySM 4/6/8/10/12
PHOBySH 10/12
Open Drain PODy 1/2/4/6/8/10/12 4-29
PODySM 4/6/8/10/12
PODySH 10/12
PHODy 1/2/4/6/8/10/12
PHODySM 4/6/8/10/12
PHODySH 10/12
PTODy 1/2/3
INPUT/OUTPUT CELLS SUMMARY TABLES
Samsung ASIC 4-3 STDM110
<Naming Convention of Output Buffers>
Tri-State POTy 1/2/4/6/8/10/12 4-41
POTySM 4/6/8/10/12
POTySH 10/12
PHOTy 1/2/4/6/8/10/12
PHOTySM 4/6/8/10/12
PHOTySH 10/12
PTOTy 1/2/3
P wO x y z
wy
None 2.5V interface 1 1mA drive
H 3.3V interface 2 2mA drive
x4 4mA drive
B Normal buffer 6 6mA drive
D Open drain buffer 8 8mA drive
T Tri-state buffer 10 10mA drive
z12 12mA drive
None No slew-rate control
SM Medium slew-rate control
SH High slew-rate control
P T O x y
xy
D Open drain buffer 1 1mA drive
T Tri-state buffer 2 2mA drive
3 3mA drive
Cell Type Cell Name Current Drive (mA) Page
SUMMARY TABLES INPUT/OUTPUT CELLS
STDM110 4-4 Samsung ASIC
Bi-Directional Buffers
<Naming Convention of Bi-Directional Buffers>
Cell Type Cell Name Page
Open Drain PBaDyz/PBaUDyz 4-59
PHBaDyz/PHBaUDyz
PTBaDyz/PTBaUDyz
Tri-State PBaTyz/PBaDTyz/PBaUTyz
PHBaTy/PHBaDTy/PHBaUTy
PTBaTy/PTBaDTy/PTBaUTy
Pw B a b x y z
wy
None 2.5V interface 1 1mA drive
H 3.3V interface 2 2mA drive
a4 4mA drive
C LVCMOS level 6 6mA drive
S LVCMOS Schmitt trigger level 8 8mA drive
T LVTTL level 10 10mA drive
b12 12mA drive
None No resistor z
D Pull-down resistor None No slew-rate control
U Pull-up resistor SM Medium slew -rate control
xSH High slew-rate control
B Normal buffer
D Open drain buffer
T Tri-state buffer
P T B a b x y
ax
C LVCMOS level D Open drain buffer
S LVCMOS Schmitt trigger level T Tri-state buffer
T LVTTL level y
b1 1mA drive
None No resistor 2 2mA drive
D Pull-down resistor 3 3mA drive
U Pull-up resistor
INPUT/OUTPUT CELLS SUMMARY TABLES
Samsung ASIC 4-5 STDM110
Oscillators
PCI Buffers
USB (Universal Serial Bus) I/O Buffers (Under development)
Power Pads
Analog Interface
Cell Type Cell Name Page
Oscillator PHSOSCK1/K2/M1/M2 4-61
PH2SOSCK1/K2/M1/M2 4-66
PSOSCK1/K2/M1/M2 4-71
Cell Type Cell Name Page
5V-tolerant PCI Input PTIPCI 4-78
5V-tolerant PCI Output PTOPCI 4-79
5V-tolerant PCI Bi-directional Buffer PTBPCI 4-80
Cell Type Cell Name Page
Bi-directional USB buffer PBUSB/PBUSB1 4-83
PBUSB_LS 4-84
PBUSB_FS 4-85
Cell Type Cell Name Page
2.5V VDD VDD2(I/P/O/IP/OP/T) 4-92
3.3V VDD VDD3(P/O/OP)
VSS VSS2(I/P/O/IP/OP/T)
VSS3(P/O/OP)
Analog VDD Power Pads VDD2I_ABB/VDD2OP_ABB/VDD2T_ABB
Analog VSS Power Pads VSS2I_ABB/VSS2OP_ABB/VSS2T_ABB
VBB_ABB/VSSBB_ABB
Cell Type Cell Name Page
Analog Input with Seperated Bulk-Bias PIC_ABB 4-94
PICC_ABB 4-95
PICEN_ABB 4-96
Analog Output with Seperated Bulk-Bias POT(1/2/4/8)_ABB 4-97
SUMMARY TABLES INPUT/OUTPUT CELLS
STDM110 4-6 Samsung ASIC
Slot Cells
Cell Type Cell Name Page
ESD Slot Cells EV1I 4-100
EV2P/EV2O/EV2OP
EV3P/EV3O/EV3OP
EV1I_ABB/EV2OP_ABB
Common Slot Cells EC0C0/EC0C0D 4-101
EC0CA0/EC0CA0D
EC0C0_BB/EC0C0D_BB/
EC0C0_VBB/EC0C0D_VBB
SEC ASIC 4-7 STDM110
INPUT BUFFERS
Cell ListCell Name Function Description
PIC/PICD/PICU 2.5V LVCMOS Level Input Buffers
PHIC/PHICD/PHICU 3.3V LVCMOS Level Input Buffers
PTIC/PTICD/PTICU 5V-Tolerant LVCMOS Level Input Buffers
PIS/PISD/PISU 2.5V LVCMOS Schmitt Trigger Level Input Buffers
PHIS/PHISD/PHISU 3.3V LVCMOS Schmitt Trigger Level Input Buffers
PTIS/PTISD/PTISU 5V-Tolerant LVCMOS Schmitt Trigger Level Input Buffers
PHIT/PHITD/PHITU 3.3V LVTTL Level Input Buffers
PTIT/PTITD/PTITU 5V-tolerant LVTTL Level Input Buffers
STDM110 4-8 Samsung ASIC
PvIC/PvICD/PvICU
LVCMOS Level Input Buffers
Cell Availability
Logic Symbol
2.5V Interface 3.3V Interface 5V Tolerant
PIC/PICD/PICU PHIC/PHICD/PHICU PTIC/PTICD/PTICU
Truth Table
Standard Load (SL)
PAD PI Y PO
1110
0x01
1011
Cell Name PI
PIC/PICD/PICU 2.835
PHIC/PHICD/PHICU 2.835
PTIC/PTICD/PTICU 2.835
Y
PO
PI
PAD
Y
PO
PI
PAD
Y
PO
PI
PAD
PIC
PICD
PICU
Samsung ASIC 4-9 STDM110
PvIC/PvICD/PvICU
LVCMOS Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 3.00ns, SL: Standard Load)
PIC
PICD
PICU
NOTE: The delay measure point of LVCMOS input buffer is from PAD(VDD/2) to Y(VDD/2).
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.196 0.181 + 0.008*SL 0.180 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.995 0.984 + 0.005*SL 0.987 + 0.004*SL 1.003 + 0.004*SL
tPHL 1.392 1.381 + 0.006*SL 1.388 + 0.004*SL 1.462 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.196 0.181 + 0.008*SL 0.180 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.006*SL 0.198 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.064 1.053 + 0.005*SL 1.056 + 0.004*SL 1.072 + 0.004*SL
tPHL 1.349 1.337 + 0.006*SL 1.344 + 0.004*SL 1.419 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.196 0.181 + 0.008*SL 0.179 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.938 0.927 + 0.005*SL 0.930 + 0.004*SL 0.947 + 0.004*SL
tPHL 1.465 1.453 + 0.006*SL 1.460 + 0.004*SL 1.535 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-10 Samsung ASIC
PvIC/PvICD/PvICU
LVCMOS Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PHIC
PHICD
PHICU
NOTE: The delay measure point of LVCMOS input buffer is from PAD(VDD/2) to Y(VDD/2).
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.168 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.791 0.781 + 0.005*SL 0.783 + 0.004*SL 0.795 + 0.004*SL
tPHL 1.151 1.139 + 0.006*SL 1.146 + 0.004*SL 1.220 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.198 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.869 0.859 + 0.005*SL 0.861 + 0.004*SL 0.873 + 0.004*SL
tPHL 1.115 1.103 + 0.006*SL 1.110 + 0.004*SL 1.184 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.736 0.726 + 0.005*SL 0.728 + 0.004*SL 0.740 + 0.004*SL
tPHL 1.226 1.215 + 0.006*SL 1.222 + 0.004*SL 1.296 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Samsung ASIC 4-11 STDM110
PvIC/PvICD/PvICU
LVCMOS Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PTIC
PTICD
PTICU
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.185 0.169 + 0.008*SL 0.168 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.940 0.930 + 0.005*SL 0.932 + 0.004*SL 0.944 + 0.004*SL
tPHL 1.532 1.520 + 0.006*SL 1.527 + 0.004*SL 1.601 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.169 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.021 1.011 + 0.005*SL 1.014 + 0.004*SL 1.026 + 0.004*SL
tPHL 1.496 1.485 + 0.006*SL 1.491 + 0.004*SL 1.566 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.169 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.198 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.787 0.777 + 0.005*SL 0.779 + 0.004*SL 0.792 + 0.004*SL
tPHL 1.727 1.715 + 0.006*SL 1.722 + 0.004*SL 1.797 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-12 Samsung ASIC
PvIS/PvISD/PvISU
LVCMOS Schmitt Trigger Level Input Buffers
Cell Availability
Logic Symbol
2.5V Interface 3.3V Interface 5V Tolerant
PIS/PISD/PISU PHIS/PHISD/PHISU PTIS/PTISD/PTISU
Truth Table
Standard Load (SL)
PAD PI Y PO
1110
0x01
1011
Cell Name PI
PIS/PISD/PISU 2.835
PHIS/PHISD/PHISU 2.835
PTIS/PTISD/PTISU 2.835
Y
PO
PI
PAD
Y
PO
PI
PAD
Y
PO
PI
PAD
PIS
PISD
PISU
Samsung ASIC 4-13 STDM110
PvIS/PvISD/PvISU
LVCMOS Schmitt Trigger Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 3.00ns, SL: Standard Load)
PIS
PISD
PISU
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.197 0.182 + 0.008*SL 0.180 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.006*SL 0.198 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.412 1.401 + 0.005*SL 1.404 + 0.004*SL 1.421 + 0.004*SL
tPHL 1.825 1.813 + 0.006*SL 1.820 + 0.004*SL 1.895 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.197 0.181 + 0.008*SL 0.180 + 0.008*SL 0.159 + 0.008*SL
tF 0.211 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.419 1.409 + 0.005*SL 1.412 + 0.004*SL 1.428 + 0.004*SL
tPHL 1.857 1.846 + 0.006*SL 1.853 + 0.004*SL 1.928 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.196 0.181 + 0.008*SL 0.179 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.424 1.414 + 0.005*SL 1.417 + 0.004*SL 1.433 + 0.004*SL
tPHL 1.838 1.826 + 0.006*SL 1.833 + 0.004*SL 1.908 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-14 Samsung ASIC
PvIS/PvISD/PvISU
LVCMOS Schmitt Trigger Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PHIS
PHISD
PHISU
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.156 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.020 1.010 + 0.005*SL 1.013 + 0.004*SL 1.024 + 0.004*SL
tPHL 1.596 1.584 + 0.006*SL 1.591 + 0.004*SL 1.666 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.185 0.169 + 0.008*SL 0.168 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.522 1.513 + 0.005*SL 1.515 + 0.004*SL 1.527 + 0.004*SL
tPHL 1.838 1.826 + 0.006*SL 1.833 + 0.004*SL 1.907 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.169 + 0.007*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.034 1.024 + 0.005*SL 1.026 + 0.004*SL 1.038 + 0.004*SL
tPHL 1.605 1.593 + 0.006*SL 1.601 + 0.004*SL 1.675 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Samsung ASIC 4-15 STDM110
PvIS/PvISD/PvISU
LVCMOS Schmitt Trigger Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PTIS
PTISD
PTISU
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.186 0.170 + 0.008*SL 0.169 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.180 1.170 + 0.005*SL 1.173 + 0.004*SL 1.186 + 0.004*SL
tPHL 1.643 1.632 + 0.006*SL 1.639 + 0.004*SL 1.713 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.186 0.170 + 0.008*SL 0.169 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.207 1.197 + 0.005*SL 1.199 + 0.004*SL 1.212 + 0.004*SL
tPHL 1.687 1.675 + 0.006*SL 1.683 + 0.004*SL 1.757 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.186 0.170 + 0.008*SL 0.169 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.147 1.138 + 0.005*SL 1.140 + 0.004*SL 1.153 + 0.004*SL
tPHL 1.691 1.679 + 0.006*SL 1.686 + 0.004*SL 1.760 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-16 Samsung ASIC
PvIT/PvITD/PvITU
LVTTL Level Input Buffers
Cell Availability
Logic Symbol
3.3V Interface 5V Tolerant
PHIT/PHITD/PHITU PTIT/PTITD/PTITU
Truth Table
Standard Load (SL)
PAD PI Y PO
1110
0x01
1011
Cell Name PI
PHIT/PHITD/PHITU 3.620
PTIT/PTITD/PTITU 3.620
Y
PO
PI
PAD
Y
PO
PI
PAD
Y
PO
PI
PAD
PIT
PITD
PITU
Samsung ASIC 4-17 STDM110
PvIT/PvITD/PvITU
LVTTL Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PHIT
PHITD
PHITU
NOTE: The delay measure point of LVTTL input buffer is from PAD(1.4) to Y(VDD/2).
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.169 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.681 0.671 + 0.005*SL 0.673 + 0.004*SL 0.685 + 0.004*SL
tPHL 1.183 1.171 + 0.006*SL 1.178 + 0.004*SL 1.253 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.710 0.700 + 0.005*SL 0.702 + 0.004*SL 0.714 + 0.004*SL
tPHL 1.215 1.203 + 0.006*SL 1.210 + 0.004*SL 1.285 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.685 0.675 + 0.005*SL 0.677 + 0.004*SL 0.689 + 0.004*SL
tPHL 1.191 1.179 + 0.006*SL 1.186 + 0.004*SL 1.260 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-18 Samsung ASIC
PvIT/PvITD/PvITU
LVTTL Level Input Buffers
Switching Characteristics (Typical process, 25°C, 1.8V, 3.3V, tR/tF = 3.00ns, SL: Standard Load)
PTIT
PTITD
PTITU
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.169 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.767 0.757 + 0.005*SL 0.759 + 0.004*SL 0.771 + 0.004*SL
tPHL 1.446 1.434 + 0.006*SL 1.441 + 0.004*SL 1.516 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.798 0.789 + 0.005*SL 0.791 + 0.004*SL 0.803 + 0.004*SL
tPHL 1.479 1.467 + 0.006*SL 1.474 + 0.004*SL 1.549 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.184 0.168 + 0.008*SL 0.167 + 0.008*SL 0.157 + 0.008*SL
tF 0.210 0.196 + 0.007*SL 0.198 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.774 0.764 + 0.005*SL 0.767 + 0.004*SL 0.779 + 0.004*SL
tPHL 1.503 1.491 + 0.006*SL 1.498 + 0.004*SL 1.573 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
SEC ASIC 4-19 STDM110
OUTPUT BUFFERS
Cell List
Cell Name Function Description
POB(1/2/4/6/8/10/12) 2.5V LVCMOS Normal Output Buffers
POB(4/6/8/10/12)SM 2.5V LVCMOS Normal Output Buffers with Medium Slew-Rate
POB(10/12)SH 2.5V LVCMOS Normal Output Buffers with High Slew-Rate
PHOB(1/2/4/6/8/10/12) 3.3V LVCMOS Normal Output Buffers
PHOB(4/6/8/10/12)SM 3.3V LVCMOS Normal Output Buffers with Medium Slew-Rate
PHOB(10/12)SH 3.3V LVCMOS Normal Output Buffers with High Slew-Rate
POD(1/2/4/6/8/10/12) 2.5V LVCMOS Open Drain Output Buffers
POD(4/6/8/10/12)SM 2.5V LVCMOS Open Drain Output Buffers with Medium Slew-Rate
POD(10/12)SH 2.5V LVCMOS Open Drain Output Buffers with High Slew-Rate
PHOD(1/2/4/6/8/10/12) 3.3V LVCMOS Open Drain Output Buffers
PHOD(4/6/8/10/12)SM 3.3V LVCMOS Open Drain Output Buffers with Medium Slew-Rate
PHOD(10/12)SH 3.3V LVCMOS Open Drain Output Buffers with High Slew-Rate
PTOD(1/2/3) 5V Tolerant Open Drain Output Buffers
POT(1/2/4/6/8/10/12) 2.5V LVCMOS Tri-State Output Buffers
POT(4/6/8/10/12)SM 2.5V LVCMOS Tri-State Output Buffers with Medium Slew-Rate
POT(10/12)SH 2.5V LVCMOS Tri-State Output Buffers with High Slew-Rate
PHOT(1/2/4/6/8/10/12) 3.3V LVCMOS Tri-State Output Buffers
PHOT(4/6/8/10/12)SM 3.3V LVCMOS Tri-State Output Buffers with Medium Slew-Rate
PHOT(10/12)SH 3.3V LVCMOS Tri-State Output Buffers with High Slew-Rate
PTOT(1/2/3) 5V Tolerant Tri-State Output Buffers
STDM110 4-20 Samsung ASIC
PvOByz
Normal Output Buffers
Cell Availability
Logic Symbol
Standard Load (SL)
2.5V Interface 3.3V Interface
POB(1/2/4/6/8/10/12)
POB(4/6/8/10/12)SM
POB(10/12)SH
PHOB(1/2/4/6/8/10/12)
PHOB(4/6/8/10/12)SM
PHOB(10/12)SH
Cell Name A
POB(1/2/4/6/8/10/12) 5.147
POB(4/6/8/10/12)SM 5.147
POB(10/12)SH 5.147
PHOB(1/2/4/6/8/10/12) 5.147
PHOB(4/6/8/10/12)SM 5.147
PHOB(10/12)SH 5.147
Truth Table
APAD
00
11
PAD
A
Samsung ASIC 4-21 STDM110
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POB1
POB2
POB4
POB6
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 31.508 1.210 + 0.606*CL 1.212 + 0.606*CL 1.209 + 0.606*CL
tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPLH 16.185 1.678 + 0.290*CL 1.679 + 0.290*CL 1.676 + 0.290*CL
tPHL 17.834 1.724 + 0.322*CL 1.726 + 0.322*CL 1.726 + 0.322*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 15.772 0.624 + 0.303*CL 0.622 + 0.303*CL 0.625 + 0.303*CL
tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPLH 8.752 1.498 + 0.145*CL 1.499 + 0.145*CL 1.498 + 0.145*CL
tPHL 10.468 1.350 + 0.182*CL 1.348 + 0.182*CL 1.351 + 0.182*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.917 0.349 + 0.151*CL 0.342 + 0.151*CL 0.343 + 0.151*CL
tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPLH 5.190 1.563 + 0.073*CL 1.563 + 0.073*CL 1.563 + 0.073*CL
tPHL 5.801 1.243 + 0.091*CL 1.242 + 0.091*CL 1.242 + 0.091*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.317 0.312 + 0.100*CL 0.281 + 0.101*CL 0.265 + 0.101*CL
tF 6.097 0.261 + 0.117*CL 0.257 + 0.117*CL 0.256 + 0.117*CL
tPLH 4.128 1.708 + 0.048*CL 1.709 + 0.048*CL 1.710 + 0.048*CL
tPHL 4.296 1.264 + 0.061*CL 1.260 + 0.061*CL 1.258 + 0.061*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-22 Samsung ASIC
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POB8
POB10
POB12
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.050 0.355 + 0.074*CL 0.305 + 0.075*CL 0.270 + 0.075*CL
tF 4.592 0.229 + 0.087*CL 0.216 + 0.088*CL 0.210 + 0.088*CL
tPLH 3.689 1.870 + 0.036*CL 1.874 + 0.036*CL 1.875 + 0.036*CL
tPHL 3.586 1.322 + 0.045*CL 1.314 + 0.045*CL 1.308 + 0.046*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 3.222 0.252 + 0.059*CL 0.216 + 0.060*CL 0.194 + 0.060*CL
tF 3.669 0.176 + 0.070*CL 0.167 + 0.070*CL 0.164 + 0.070*CL
tPLH 3.362 1.908 + 0.029*CL 1.910 + 0.029*CL 1.911 + 0.029*CL
tPHL 3.189 1.374 + 0.036*CL 1.369 + 0.036*CL 1.367 + 0.036*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 2.726 0.284 + 0.049*CL 0.242 + 0.050*CL 0.210 + 0.050*CL
tF 3.070 0.169 + 0.058*CL 0.156 + 0.058*CL 0.149 + 0.058*CL
tPLH 3.208 1.992 + 0.024*CL 1.998 + 0.024*CL 1.999 + 0.024*CL
tPHL 2.915 1.409 + 0.030*CL 1.402 + 0.030*CL 1.397 + 0.030*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-23 STDM110
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POB4SM
POB6SM
POB8SM
POB10SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 8.138 0.760 + 0.148*CL 0.666 + 0.149*CL 0.591 + 0.150*CL
tF 9.484 1.002 + 0.170*CL 0.891 + 0.172*CL 0.787 + 0.173*CL
tPLH 6.684 3.028 + 0.073*CL 3.050 + 0.073*CL 3.056 + 0.073*CL
tPHL 7.944 3.307 + 0.093*CL 3.367 + 0.092*CL 3.386 + 0.091*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.055 1.322 + 0.095*CL 1.260 + 0.096*CL 1.160 + 0.097*CL
tF 6.974 1.437 + 0.111*CL 1.402 + 0.111*CL 1.310 + 0.113*CL
tPLH 6.333 3.623 + 0.054*CL 3.806 + 0.051*CL 3.909 + 0.049*CL
tPHL 7.242 3.835 + 0.068*CL 4.055 + 0.064*CL 4.190 + 0.062*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.172 1.681 + 0.070*CL 1.692 + 0.070*CL 1.619 + 0.071*CL
tF 5.696 1.539 + 0.083*CL 1.580 + 0.082*CL 1.530 + 0.083*CL
tPLH 5.933 3.590 + 0.047*CL 3.875 + 0.041*CL 4.070 + 0.039*CL
tPHL 6.524 3.752 + 0.055*CL 4.013 + 0.050*CL 4.197 + 0.048*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.217 1.340 + 0.058*CL 1.378 + 0.057*CL 1.357 + 0.057*CL
tF 4.723 1.348 + 0.068*CL 1.409 + 0.066*CL 1.397 + 0.066*CL
tPLH 5.573 3.656 + 0.038*CL 3.883 + 0.034*CL 4.053 + 0.032*CL
tPHL 6.086 3.775 + 0.046*CL 4.014 + 0.041*CL 4.193 + 0.039*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-24 Samsung ASIC
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POB12SM
POB10SH
POB12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.209 1.652 + 0.051*CL 1.797 + 0.048*CL 1.869 + 0.047*CL
tF 4.538 1.532 + 0.060*CL 1.712 + 0.057*CL 1.801 + 0.055*CL
tPLH 5.807 3.846 + 0.039*CL 4.152 + 0.033*CL 4.409 + 0.030*CL
tPHL 6.287 4.066 + 0.044*CL 4.350 + 0.039*CL 4.594 + 0.035*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.241 2.972 + 0.065*CL 3.254 + 0.060*CL 3.439 + 0.057*CL
tF 6.418 2.686 + 0.075*CL 2.964 + 0.069*CL 3.140 + 0.067*CL
tPLH 8.790 5.851 + 0.059*CL 6.408 + 0.048*CL 6.878 + 0.041*CL
tPHL 9.014 5.815 + 0.064*CL 6.331 + 0.054*CL 6.774 + 0.048*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.624 3.594 + 0.061*CL 3.976 + 0.053*CL 4.247 + 0.049*CL
tF 6.506 3.047 + 0.069*CL 3.447 + 0.061*CL 3.723 + 0.057*CL
tPLH 9.300 6.148 + 0.063*CL 6.835 + 0.049*CL 7.418 + 0.042*CL
tPHL 9.482 6.255 + 0.065*CL 6.844 + 0.053*CL 7.354 + 0.046*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-25 STDM110
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOB1
PHOB2
PHOB4
PHOB6
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 42.148 1.623 + 0.811*CL 1.624 + 0.810*CL 1.621 + 0.811*CL
tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPLH 20.566 1.821 + 0.375*CL 1.818 + 0.375*CL 1.818 + 0.375*CL
tPHL 17.535 1.970 + 0.311*CL 1.971 + 0.311*CL 1.971 + 0.311*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 21.098 0.836 + 0.405*CL 0.836 + 0.405*CL 0.833 + 0.405*CL
tF 18.189 0.704 + 0.350*CL 0.705 + 0.350*CL 0.705 + 0.350*CL
tPLH 10.867 1.494 + 0.187*CL 1.493 + 0.187*CL 1.493 + 0.187*CL
tPHL 10.485 1.590 + 0.178*CL 1.589 + 0.178*CL 1.592 + 0.178*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 10.563 0.433 + 0.203*CL 0.431 + 0.203*CL 0.431 + 0.203*CL
tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPLH 6.093 1.407 + 0.094*CL 1.407 + 0.094*CL 1.407 + 0.094*CL
tPHL 5.923 1.476 + 0.089*CL 1.476 + 0.089*CL 1.477 + 0.089*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.047 0.294 + 0.135*CL 0.294 + 0.135*CL 0.293 + 0.135*CL
tF 6.082 0.255 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPLH 4.682 1.559 + 0.062*CL 1.558 + 0.062*CL 1.558 + 0.062*CL
tPHL 4.601 1.636 + 0.059*CL 1.636 + 0.059*CL 1.636 + 0.059*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-26 Samsung ASIC
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOB8
PHOB10
PHOB12
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.293 0.230 + 0.101*CL 0.228 + 0.101*CL 0.228 + 0.101*CL
tF 4.572 0.206 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPLH 3.920 1.579 + 0.047*CL 1.577 + 0.047*CL 1.577 + 0.047*CL
tPHL 3.869 1.645 + 0.044*CL 1.645 + 0.044*CL 1.645 + 0.044*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.243 0.197 + 0.081*CL 0.191 + 0.081*CL 0.190 + 0.081*CL
tF 3.670 0.185 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPLH 3.480 1.610 + 0.037*CL 1.607 + 0.037*CL 1.606 + 0.037*CL
tPHL 3.444 1.665 + 0.036*CL 1.664 + 0.036*CL 1.665 + 0.036*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 3.544 0.181 + 0.067*CL 0.170 + 0.067*CL 0.167 + 0.068*CL
tF 3.071 0.179 + 0.058*CL 0.164 + 0.058*CL 0.157 + 0.058*CL
tPLH 3.201 1.647 + 0.031*CL 1.643 + 0.031*CL 1.640 + 0.031*CL
tPHL 3.172 1.689 + 0.030*CL 1.689 + 0.030*CL 1.690 + 0.030*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-27 STDM110
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOB4SM
PHOB6SM
PHOB8SM
PHOB10SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 10.608 0.517 + 0.202*CL 0.486 + 0.202*CL 0.477 + 0.203*CL
tF 9.435 0.948 + 0.170*CL 0.843 + 0.172*CL 0.750 + 0.173*CL
tPLH 6.842 2.153 + 0.094*CL 2.155 + 0.094*CL 2.155 + 0.094*CL
tPHL 7.858 3.349 + 0.090*CL 3.398 + 0.089*CL 3.410 + 0.089*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.211 0.618 + 0.132*CL 0.540 + 0.133*CL 0.478 + 0.134*CL
tF 6.906 1.349 + 0.111*CL 1.323 + 0.112*CL 1.241 + 0.113*CL
tPLH 5.604 2.461 + 0.063*CL 2.476 + 0.063*CL 2.479 + 0.063*CL
tPHL 7.116 3.806 + 0.066*CL 4.013 + 0.062*CL 4.138 + 0.060*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.691 0.887 + 0.096*CL 0.802 + 0.098*CL 0.711 + 0.099*CL
tF 6.049 1.774 + 0.085*CL 1.892 + 0.083*CL 1.916 + 0.083*CL
tPLH 5.246 2.791 + 0.049*CL 2.873 + 0.047*CL 2.905 + 0.047*CL
tPHL 7.131 4.167 + 0.059*CL 4.512 + 0.052*CL 4.780 + 0.049*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.501 0.614 + 0.078*CL 0.553 + 0.079*CL 0.502 + 0.080*CL
tF 5.266 1.797 + 0.069*CL 1.949 + 0.066*CL 2.003 + 0.066*CL
tPLH 4.440 2.524 + 0.038*CL 2.561 + 0.038*CL 2.571 + 0.037*CL
tPHL 6.537 3.940 + 0.052*CL 4.301 + 0.045*CL 4.591 + 0.041*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-28 Samsung ASIC
PvOByz
Normal Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOB12SM
PHOB10SH
PHOB12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.001 0.794 + 0.064*CL 0.770 + 0.065*CL 0.723 + 0.065*CL
tF 4.472 1.497 + 0.059*CL 1.644 + 0.057*CL 1.721 + 0.056*CL
tPLH 4.402 2.680 + 0.034*CL 2.782 + 0.032*CL 2.840 + 0.032*CL
tPHL 6.119 3.911 + 0.044*CL 4.209 + 0.038*CL 4.456 + 0.035*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.281 1.455 + 0.077*CL 1.475 + 0.076*CL 1.424 + 0.077*CL
tF 6.193 2.408 + 0.076*CL 2.688 + 0.070*CL 2.878 + 0.068*CL
tPLH 6.206 3.869 + 0.047*CL 4.111 + 0.042*CL 4.281 + 0.040*CL
tPHL 8.553 5.444 + 0.062*CL 5.939 + 0.052*CL 6.363 + 0.047*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.972 1.688 + 0.066*CL 1.804 + 0.063*CL 1.821 + 0.063*CL
tF 6.207 2.739 + 0.069*CL 3.098 + 0.062*CL 3.372 + 0.059*CL
tPLH 6.356 4.127 + 0.045*CL 4.428 + 0.039*CL 4.667 + 0.035*CL
tPHL 8.874 5.720 + 0.063*CL 6.292 + 0.052*CL 6.793 + 0.045*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-29 STDM110
PvODyz
Open Drain Output Buffers
Cell Availability
Logic Symbol
Standard Load (SL)
2.5V Interface 3.3V Interface 5V Tolerant
POD(1/2/4/6/8/10/12)
POD(4/6/8/10/12)SM
POD(10/12)SH
PHOD(1/2/4/6/8/10/12)
PHOD(4/6/8/10/12)SM
PHOD(10/12)SH
PTOD(1/2/3)
Cell Name TN EN
POD(1/2/4/6/8/10/12) 2.833 2.816
POD(4/6/8/10/12)SM 2.833 2.816
POD(10/12)SH 2.833 2.816
PHOD(1/2/4/6/8/10/12) 2.833 2.816
PHOD(4/6/8/10/12)SM 2.833 2.816
PHOD(10/12)SH 2.833 2.816
PTOD(1/2/3) 2.833 2.816
Truth Table
TN EN PAD
100
0 x Hi-Z
x 1 Hi-Z
PAD
TN
EN
STDM110 4-30 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POD1
POD2
POD4
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPHL 18.398 2.288 + 0.322*CL 2.290 + 0.322*CL 2.290 + 0.322*CL
tPLZ 1.756 1.755 + 0.000*CL 1.756 + 0.000*CL 1.756 + 0.000*CL
EN to PAD tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPHL 18.570 2.460 + 0.322*CL 2.462 + 0.322*CL 2.462 + 0.322*CL
tPLZ 1.839 1.839 + 0.000*CL 1.839 + 0.000*CL 1.839 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPHL 11.039 1.921 + 0.182*CL 1.919 + 0.182*CL 1.922 + 0.182*CL
tPLZ 1.609 1.609 + 0.000*CL 1.609 + 0.000*CL 1.609 + 0.000*CL
EN to PAD tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPHL 11.212 2.092 + 0.182*CL 2.094 + 0.182*CL 2.094 + 0.182*CL
tPLZ 1.693 1.693 + 0.000*CL 1.693 + 0.000*CL 1.693 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPHL 6.366 1.806 + 0.091*CL 1.806 + 0.091*CL 1.807 + 0.091*CL
tPLZ 1.738 1.738 + 0.000*CL 1.738 + 0.000*CL 1.738 + 0.000*CL
EN to PAD tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPHL 6.538 1.979 + 0.091*CL 1.979 + 0.091*CL 1.978 + 0.091*CL
tPLZ 1.821 1.821 + 0.000*CL 1.820 + 0.000*CL 1.821 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-31 STDM110
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POD6
POD8
POD10
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.097 0.260 + 0.117*CL 0.256 + 0.117*CL 0.256 + 0.117*CL
tPHL 4.856 1.816 + 0.061*CL 1.817 + 0.061*CL 1.816 + 0.061*CL
tPLZ 1.865 1.865 + 0.000*CL 1.865 + 0.000*CL 1.865 + 0.000*CL
EN to PAD tF 6.097 0.260 + 0.117*CL 0.256 + 0.117*CL 0.256 + 0.117*CL
tPHL 5.029 1.989 + 0.061*CL 1.989 + 0.061*CL 1.989 + 0.061*CL
tPLZ 1.948 1.948 + 0.000*CL 1.948 + 0.000*CL 1.948 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 4.591 0.229 + 0.087*CL 0.215 + 0.088*CL 0.210 + 0.088*CL
tPHL 4.137 1.857 + 0.046*CL 1.857 + 0.046*CL 1.858 + 0.046*CL
tPLZ 1.992 1.992 + 0.000*CL 1.992 + 0.000*CL 1.992 + 0.000*CL
EN to PAD tF 4.591 0.229 + 0.087*CL 0.215 + 0.088*CL 0.210 + 0.088*CL
tPHL 4.310 2.029 + 0.046*CL 2.030 + 0.046*CL 2.030 + 0.046*CL
tPLZ 2.075 2.074 + 0.000*CL 2.075 + 0.000*CL 2.075 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 3.668 0.175 + 0.070*CL 0.166 + 0.070*CL 0.163 + 0.070*CL
tPHL 3.608 1.784 + 0.036*CL 1.784 + 0.036*CL 1.784 + 0.036*CL
tPLZ 1.849 1.849 + 0.000*CL 1.849 + 0.000*CL 1.849 + 0.000*CL
EN to PAD tF 3.668 0.175 + 0.070*CL 0.166 + 0.070*CL 0.163 + 0.070*CL
tPHL 3.780 1.956 + 0.036*CL 1.957 + 0.036*CL 1.956 + 0.036*CL
tPLZ 1.932 1.932 + 0.000*CL 1.932 + 0.000*CL 1.932 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-32 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POD12
POD4SM
POD6SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 3.069 0.168 + 0.058*CL 0.154 + 0.058*CL 0.147 + 0.058*CL
tPHL 3.328 1.807 + 0.030*CL 1.808 + 0.030*CL 1.808 + 0.030*CL
tPLZ 1.913 1.913 + 0.000*CL 1.913 + 0.000*CL 1.913 + 0.000*CL
EN to PAD tF 3.069 0.168 + 0.058*CL 0.154 + 0.058*CL 0.147 + 0.058*CL
tPHL 3.500 1.980 + 0.030*CL 1.980 + 0.030*CL 1.980 + 0.030*CL
tPLZ 1.996 1.995 + 0.000*CL 1.996 + 0.000*CL 1.996 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 9.489 1.017 + 0.169*CL 0.900 + 0.172*CL 0.797 + 0.173*CL
tPHL 8.414 3.778 + 0.093*CL 3.838 + 0.092*CL 3.859 + 0.091*CL
tPLZ 1.882 1.881 + 0.000*CL 1.881 + 0.000*CL 1.882 + 0.000*CL
EN to PAD tF 9.489 1.017 + 0.169*CL 0.900 + 0.172*CL 0.797 + 0.173*CL
tPHL 8.586 3.950 + 0.093*CL 4.011 + 0.092*CL 4.028 + 0.091*CL
tPLZ 1.965 1.964 + 0.000*CL 1.964 + 0.000*CL 1.965 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.995 1.478 + 0.110*CL 1.435 + 0.111*CL 1.338 + 0.113*CL
tPHL 7.726 4.313 + 0.068*CL 4.537 + 0.064*CL 4.673 + 0.062*CL
tPLZ 2.156 2.156 + 0.000*CL 2.156 + 0.000*CL 2.156 + 0.000*CL
EN to PAD tF 6.995 1.478 + 0.110*CL 1.435 + 0.111*CL 1.338 + 0.113*CL
tPHL 7.898 4.485 + 0.068*CL 4.709 + 0.064*CL 4.844 + 0.062*CL
tPLZ 2.239 2.239 + 0.000*CL 2.239 + 0.000*CL 2.239 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-33 STDM110
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POD8SM
POD10SM
POD12SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 5.742 1.646 + 0.082*CL 1.653 + 0.082*CL 1.585 + 0.083*CL
tPHL 7.020 4.215 + 0.056*CL 4.496 + 0.050*CL 4.691 + 0.048*CL
tPLZ 2.765 2.763 + 0.000*CL 2.764 + 0.000*CL 2.764 + 0.000*CL
EN to PAD tF 5.742 1.647 + 0.082*CL 1.653 + 0.082*CL 1.585 + 0.083*CL
tPHL 7.192 4.387 + 0.056*CL 4.668 + 0.050*CL 4.864 + 0.048*CL
tPLZ 2.848 2.845 + 0.000*CL 2.847 + 0.000*CL 2.847 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 4.754 1.409 + 0.067*CL 1.455 + 0.066*CL 1.434 + 0.066*CL
tPHL 6.586 4.260 + 0.047*CL 4.508 + 0.042*CL 4.692 + 0.039*CL
tPLZ 2.765 2.763 + 0.000*CL 2.764 + 0.000*CL 2.764 + 0.000*CL
EN to PAD tF 4.754 1.409 + 0.067*CL 1.455 + 0.066*CL 1.434 + 0.066*CL
tPHL 6.759 4.433 + 0.047*CL 4.680 + 0.042*CL 4.864 + 0.039*CL
tPLZ 2.848 2.846 + 0.000*CL 2.847 + 0.000*CL 2.848 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 4.604 1.684 + 0.058*CL 1.818 + 0.056*CL 1.879 + 0.055*CL
tPHL 6.762 4.483 + 0.046*CL 4.801 + 0.039*CL 5.062 + 0.036*CL
tPLZ 3.133 3.131 + 0.000*CL 3.132 + 0.000*CL 3.132 + 0.000*CL
EN to PAD tF 4.604 1.683 + 0.058*CL 1.818 + 0.056*CL 1.879 + 0.055*CL
tPHL 6.934 4.655 + 0.046*CL 4.973 + 0.039*CL 5.235 + 0.036*CL
tPLZ 3.216 3.214 + 0.000*CL 3.215 + 0.000*CL 3.215 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-34 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POD10SH
POD12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.494 2.829 + 0.073*CL 3.072 + 0.068*CL 3.229 + 0.066*CL
tPHL 9.394 6.161 + 0.065*CL 6.697 + 0.054*CL 7.149 + 0.048*CL
tPLZ 3.204 3.202 + 0.000*CL 3.203 + 0.000*CL 3.203 + 0.000*CL
EN to PAD tF 6.494 2.829 + 0.073*CL 3.072 + 0.068*CL 3.229 + 0.066*CL
tPHL 9.567 6.333 + 0.065*CL 6.870 + 0.054*CL 7.321 + 0.048*CL
tPLZ 3.287 3.285 + 0.000*CL 3.286 + 0.000*CL 3.286 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.638 3.349 + 0.066*CL 3.653 + 0.060*CL 3.877 + 0.057*CL
tPHL 9.829 6.518 + 0.066*CL 7.156 + 0.053*CL 7.695 + 0.046*CL
tPLZ 3.572 3.569 + 0.000*CL 3.571 + 0.000*CL 3.571 + 0.000*CL
EN to PAD tF 6.638 3.349 + 0.066*CL 3.653 + 0.060*CL 3.877 + 0.057*CL
tPHL 10.002 6.690 + 0.066*CL 7.330 + 0.053*CL 7.867 + 0.046*CL
tPLZ 3.655 3.652 + 0.000*CL 3.655 + 0.000*CL 3.653 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-35 STDM110
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOD1
PHOD2
PHOD4
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPHL 17.999 2.434 + 0.311*CL 2.435 + 0.311*CL 2.435 + 0.311*CL
tPLZ 1.763 1.762 + 0.000*CL 1.763 + 0.000*CL 1.763 + 0.000*CL
EN to PAD tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPHL 18.171 2.609 + 0.311*CL 2.607 + 0.311*CL 2.604 + 0.311*CL
tPLZ 1.845 1.845 + 0.000*CL 1.845 + 0.000*CL 1.845 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 18.188 0.706 + 0.350*CL 0.702 + 0.350*CL 0.705 + 0.350*CL
tPHL 10.958 2.062 + 0.178*CL 2.064 + 0.178*CL 2.061 + 0.178*CL
tPLZ 1.620 1.620 + 0.000*CL 1.620 + 0.000*CL 1.620 + 0.000*CL
EN to PAD tF 18.188 0.706 + 0.350*CL 0.702 + 0.350*CL 0.705 + 0.350*CL
tPHL 11.130 2.235 + 0.178*CL 2.234 + 0.178*CL 2.234 + 0.178*CL
tPLZ 1.703 1.703 + 0.000*CL 1.703 + 0.000*CL 1.703 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPHL 6.393 1.945 + 0.089*CL 1.945 + 0.089*CL 1.945 + 0.089*CL
tPLZ 1.770 1.770 + 0.000*CL 1.770 + 0.000*CL 1.770 + 0.000*CL
EN to PAD tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPHL 6.566 2.118 + 0.089*CL 2.118 + 0.089*CL 2.119 + 0.089*CL
tPLZ 1.853 1.853 + 0.000*CL 1.853 + 0.000*CL 1.853 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-36 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOD6
PHOD8
PHOD10
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.082 0.254 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPHL 4.851 1.886 + 0.059*CL 1.886 + 0.059*CL 1.886 + 0.059*CL
tPLZ 1.729 1.729 + 0.000*CL 1.729 + 0.000*CL 1.729 + 0.000*CL
EN to PAD tF 6.082 0.254 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPHL 5.024 2.058 + 0.059*CL 2.059 + 0.059*CL 2.058 + 0.059*CL
tPLZ 1.812 1.812 + 0.000*CL 1.812 + 0.000*CL 1.812 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 4.572 0.205 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPHL 4.115 1.891 + 0.044*CL 1.891 + 0.044*CL 1.891 + 0.044*CL
tPLZ 1.804 1.804 + 0.000*CL 1.804 + 0.000*CL 1.804 + 0.000*CL
EN to PAD tF 4.572 0.205 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPHL 4.287 2.063 + 0.044*CL 2.063 + 0.044*CL 2.063 + 0.044*CL
tPLZ 1.887 1.887 + 0.000*CL 1.887 + 0.000*CL 1.887 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 3.669 0.183 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPHL 3.688 1.908 + 0.036*CL 1.908 + 0.036*CL 1.909 + 0.036*CL
tPLZ 1.879 1.879 + 0.000*CL 1.879 + 0.000*CL 1.879 + 0.000*CL
EN to PAD tF 3.669 0.183 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPHL 3.860 2.081 + 0.036*CL 2.081 + 0.036*CL 2.081 + 0.036*CL
tPLZ 1.962 1.962 + 0.000*CL 1.962 + 0.000*CL 1.962 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-37 STDM110
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOD12
PHOD4SM
PHOD6SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 3.071 0.177 + 0.058*CL 0.163 + 0.058*CL 0.156 + 0.058*CL
tPHL 3.415 1.931 + 0.030*CL 1.932 + 0.030*CL 1.932 + 0.030*CL
tPLZ 1.953 1.954 + 0.000*CL 1.953 + 0.000*CL 1.953 + 0.000*CL
EN to PAD tF 3.071 0.177 + 0.058*CL 0.163 + 0.058*CL 0.156 + 0.058*CL
tPHL 3.587 2.104 + 0.030*CL 2.104 + 0.030*CL 2.104 + 0.030*CL
tPLZ 2.036 2.036 + 0.000*CL 2.036 + 0.000*CL 2.036 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 9.439 0.956 + 0.170*CL 0.850 + 0.172*CL 0.752 + 0.173*CL
tPHL 8.113 3.603 + 0.090*CL 3.652 + 0.089*CL 3.668 + 0.089*CL
tPLZ 1.869 1.869 + 0.000*CL 1.869 + 0.000*CL 1.869 + 0.000*CL
EN to PAD tF 9.439 0.956 + 0.170*CL 0.850 + 0.172*CL 0.752 + 0.173*CL
tPHL 8.285 3.776 + 0.090*CL 3.825 + 0.089*CL 3.837 + 0.089*CL
tPLZ 1.952 1.951 + 0.000*CL 1.952 + 0.000*CL 1.952 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.922 1.379 + 0.111*CL 1.347 + 0.112*CL 1.264 + 0.113*CL
tPHL 7.391 4.076 + 0.066*CL 4.285 + 0.062*CL 4.414 + 0.060*CL
tPLZ 2.174 2.173 + 0.000*CL 2.173 + 0.000*CL 2.173 + 0.000*CL
EN to PAD tF 6.922 1.379 + 0.111*CL 1.347 + 0.112*CL 1.264 + 0.113*CL
tPHL 7.563 4.248 + 0.066*CL 4.458 + 0.062*CL 4.585 + 0.060*CL
tPLZ 2.256 2.255 + 0.000*CL 2.256 + 0.000*CL 2.256 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-38 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOD8SM
PHOD10SM
PHOD12SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.080 1.825 + 0.085*CL 1.936 + 0.083*CL 1.952 + 0.083*CL
tPHL 7.414 4.439 + 0.059*CL 4.789 + 0.052*CL 5.061 + 0.049*CL
tPLZ 2.477 2.477 + 0.000*CL 2.477 + 0.000*CL 2.477 + 0.000*CL
EN to PAD tF 6.080 1.825 + 0.085*CL 1.936 + 0.083*CL 1.952 + 0.083*CL
tPHL 7.586 4.611 + 0.059*CL 4.961 + 0.052*CL 5.235 + 0.049*CL
tPLZ 2.560 2.560 + 0.000*CL 2.560 + 0.000*CL 2.559 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 5.308 1.865 + 0.069*CL 2.008 + 0.066*CL 2.054 + 0.065*CL
tPHL 6.869 4.256 + 0.052*CL 4.626 + 0.045*CL 4.920 + 0.041*CL
tPLZ 3.225 3.225 + 0.000*CL 3.225 + 0.000*CL 3.225 + 0.000*CL
EN to PAD tF 5.308 1.865 + 0.069*CL 2.008 + 0.066*CL 2.054 + 0.065*CL
tPHL 7.042 4.428 + 0.052*CL 4.798 + 0.045*CL 5.093 + 0.041*CL
tPLZ 3.308 3.308 + 0.000*CL 3.308 + 0.000*CL 3.308 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 4.504 1.544 + 0.059*CL 1.686 + 0.056*CL 1.759 + 0.055*CL
tPHL 6.443 4.222 + 0.044*CL 4.526 + 0.038*CL 4.778 + 0.035*CL
tPLZ 3.225 3.225 + 0.000*CL 3.225 + 0.000*CL 3.225 + 0.000*CL
EN to PAD tF 4.504 1.544 + 0.059*CL 1.686 + 0.056*CL 1.759 + 0.055*CL
tPHL 6.615 4.395 + 0.044*CL 4.698 + 0.038*CL 4.950 + 0.035*CL
tPLZ 3.308 3.308 + 0.000*CL 3.308 + 0.000*CL 3.308 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-39 STDM110
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOD10SH
PHOD12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.249 2.489 + 0.075*CL 2.761 + 0.070*CL 2.944 + 0.067*CL
tPHL 8.667 5.538 + 0.063*CL 6.042 + 0.052*CL 6.474 + 0.047*CL
tPLZ 3.279 3.279 + 0.000*CL 3.279 + 0.000*CL 3.279 + 0.000*CL
EN to PAD tF 6.249 2.489 + 0.075*CL 2.761 + 0.070*CL 2.944 + 0.067*CL
tPHL 8.839 5.711 + 0.063*CL 6.214 + 0.052*CL 6.645 + 0.047*CL
tPLZ 3.362 3.362 + 0.000*CL 3.362 + 0.000*CL 3.362 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 6.277 2.840 + 0.069*CL 3.189 + 0.062*CL 3.455 + 0.058*CL
tPHL 8.984 5.804 + 0.064*CL 6.388 + 0.052*CL 6.898 + 0.045*CL
tPLZ 3.684 3.683 + 0.000*CL 3.684 + 0.000*CL 3.684 + 0.000*CL
EN to PAD tF 6.277 2.840 + 0.069*CL 3.189 + 0.062*CL 3.455 + 0.058*CL
tPHL 9.156 5.976 + 0.064*CL 6.561 + 0.052*CL 7.067 + 0.045*CL
tPLZ 3.767 3.765 + 0.000*CL 3.767 + 0.000*CL 3.767 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-40 Samsung ASIC
PvODyz
Open Drain Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PTOD1
PTOD2
PTOD3
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 33.498 2.496 + 0.620*CL 2.456 + 0.621*CL 2.426 + 0.621*CL
tPHL 17.769 2.404 + 0.307*CL 2.405 + 0.307*CL 2.408 + 0.307*CL
tPLZ 1.592 1.592 + 0.000*CL 1.592 + 0.000*CL 1.592 + 0.000*CL
EN to PAD tF 33.498 2.496 + 0.620*CL 2.456 + 0.621*CL 2.426 + 0.621*CL
tPHL 17.941 2.579 + 0.307*CL 2.575 + 0.307*CL 2.584 + 0.307*CL
tPLZ 1.675 1.675 + 0.000*CL 1.675 + 0.000*CL 1.675 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 16.748 1.240 + 0.310*CL 1.234 + 0.310*CL 1.222 + 0.310*CL
tPHL 9.756 2.082 + 0.153*CL 2.085 + 0.153*CL 2.083 + 0.153*CL
tPLZ 1.714 1.714 + 0.000*CL 1.714 + 0.000*CL 1.714 + 0.000*CL
EN to PAD tF 16.748 1.240 + 0.310*CL 1.234 + 0.310*CL 1.222 + 0.310*CL
tPHL 9.928 2.255 + 0.153*CL 2.257 + 0.153*CL 2.259 + 0.153*CL
tPLZ 1.798 1.798 + 0.000*CL 1.798 + 0.000*CL 1.798 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
TN to PAD tF 11.158 0.810 + 0.207*CL 0.812 + 0.207*CL 0.809 + 0.207*CL
tPHL 7.122 2.006 + 0.102*CL 2.009 + 0.102*CL 2.009 + 0.102*CL
tPLZ 1.836 1.836 + 0.000*CL 1.836 + 0.000*CL 1.836 + 0.000*CL
EN to PAD tF 11.158 0.810 + 0.207*CL 0.812 + 0.207*CL 0.809 + 0.207*CL
tPHL 7.294 2.178 + 0.102*CL 2.181 + 0.102*CL 2.183 + 0.102*CL
tPLZ 1.919 1.919 + 0.000*CL 1.919 + 0.000*CL 1.919 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-41 STDM110
PvOTyz
Tri-State Output Buffers
Cell Availability
Logic Symbol
Standard Load (SL)
2.5V Interface 3.3V Interface 5V Tolerant
POT(1/2/4/6/8/10/12)
POT(4/6/8/10/12)SM
POT(10/12)SH
PHOT(1/2/4/6/8/10/12)
PHOT(4/6/8/10/12)SM
PHOT(10/12)SH
PTOT(1/2/3)
Cell Name TN EN A
POT(1/2/4/6/8/10/12) 2.833 2.816 5.147
POT(4/6/8/10/12)SM 2.833 2.816 5.147
POT(10/12)SH 2.833 2.816 5.147
PHOT(1/2/4/6/8/10/12) 2.833 2.816 5.147
PHOT(4/6/8/10/12)SM 2.833 2.816 5.147
PHOT(10/12)SH 2.833 2.816 5.147
PTOT(1/2/3) 2.833 2.816 5.147
Truth Table
TN EN A PAD
1000
1011
x 1 x Hi-Z
0 x x Hi-Z
PAD
A
TN
EN
STDM110 4-42 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT1
POT2
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 31.508 1.210 + 0.606*CL 1.212 + 0.606*CL 1.209 + 0.606*CL
tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPLH 16.405 1.897 + 0.290*CL 1.897 + 0.290*CL 1.900 + 0.290*CL
tPHL 18.184 2.076 + 0.322*CL 2.074 + 0.322*CL 2.077 + 0.322*CL
TN to PAD tR 31.508 1.210 + 0.606*CL 1.212 + 0.606*CL 1.209 + 0.606*CL
tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPLH 16.690 2.180 + 0.290*CL 2.182 + 0.290*CL 2.182 + 0.290*CL
tPHL 18.589 2.477 + 0.322*CL 2.481 + 0.322*CL 2.478 + 0.322*CL
tPLZ 1.841 1.841 + 0.000*CL 1.841 + 0.000*CL 1.841 + 0.000*CL
tPHZ 1.584 1.584 + 0.000*CL 1.584 + 0.000*CL 1.584 + 0.000*CL
EN to PAD tR 31.508 1.210 + 0.606*CL 1.212 + 0.606*CL 1.209 + 0.606*CL
tF 33.275 1.275 + 0.640*CL 1.279 + 0.640*CL 1.276 + 0.640*CL
tPLH 16.870 2.362 + 0.290*CL 2.362 + 0.290*CL 2.365 + 0.290*CL
tPHL 18.769 2.659 + 0.322*CL 2.661 + 0.322*CL 2.661 + 0.322*CL
tPLZ 1.923 1.923 + 0.000*CL 1.923 + 0.000*CL 1.923 + 0.000*CL
tPHZ 1.667 1.667 + 0.000*CL 1.667 + 0.000*CL 1.667 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 15.772 0.624 + 0.303*CL 0.622 + 0.303*CL 0.625 + 0.303*CL
tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPLH 8.962 1.708 + 0.145*CL 1.709 + 0.145*CL 1.708 + 0.145*CL
tPHL 10.822 1.703 + 0.182*CL 1.704 + 0.182*CL 1.701 + 0.182*CL
TN to PAD tR 15.772 0.624 + 0.303*CL 0.622 + 0.303*CL 0.625 + 0.303*CL
tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPLH 9.247 1.991 + 0.145*CL 1.992 + 0.145*CL 1.993 + 0.145*CL
tPHL 11.226 2.105 + 0.182*CL 2.106 + 0.182*CL 2.106 + 0.182*CL
tPLZ 1.690 1.690 + 0.000*CL 1.690 + 0.000*CL 1.690 + 0.000*CL
tPHZ 1.690 1.690 + 0.000*CL 1.690 + 0.000*CL 1.690 + 0.000*CL
EN to PAD tR 15.772 0.624 + 0.303*CL 0.622 + 0.303*CL 0.625 + 0.303*CL
tF 18.210 0.685 + 0.351*CL 0.688 + 0.350*CL 0.685 + 0.350*CL
tPLH 9.427 2.174 + 0.145*CL 2.173 + 0.145*CL 2.173 + 0.145*CL
tPHL 11.406 2.288 + 0.182*CL 2.286 + 0.182*CL 2.289 + 0.182*CL
tPLZ 1.772 1.772 + 0.000*CL 1.772 + 0.000*CL 1.772 + 0.000*CL
tPHZ 1.773 1.773 + 0.000*CL 1.773 + 0.000*CL 1.773 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-43 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT4
POT6
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.917 0.348 + 0.151*CL 0.342 + 0.151*CL 0.343 + 0.151*CL
tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPLH 5.396 1.769 + 0.073*CL 1.769 + 0.073*CL 1.770 + 0.073*CL
tPHL 6.155 1.597 + 0.091*CL 1.596 + 0.091*CL 1.597 + 0.091*CL
TN to PAD tR 7.917 0.348 + 0.151*CL 0.342 + 0.151*CL 0.343 + 0.151*CL
tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPLH 5.681 2.052 + 0.073*CL 2.053 + 0.073*CL 2.054 + 0.073*CL
tPHL 6.558 1.996 + 0.091*CL 1.998 + 0.091*CL 1.998 + 0.091*CL
tPLZ 1.822 1.822 + 0.000*CL 1.822 + 0.000*CL 1.822 + 0.000*CL
tPHZ 1.901 1.901 + 0.000*CL 1.901 + 0.000*CL 1.901 + 0.000*CL
EN to PAD tR 7.917 0.348 + 0.151*CL 0.342 + 0.151*CL 0.343 + 0.151*CL
tF 9.121 0.359 + 0.175*CL 0.359 + 0.175*CL 0.359 + 0.175*CL
tPLH 5.861 2.234 + 0.073*CL 2.234 + 0.073*CL 2.235 + 0.073*CL
tPHL 6.739 2.178 + 0.091*CL 2.179 + 0.091*CL 2.180 + 0.091*CL
tPLZ 1.905 1.905 + 0.000*CL 1.905 + 0.000*CL 1.905 + 0.000*CL
tPHZ 1.983 1.983 + 0.000*CL 1.983 + 0.000*CL 1.983 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.317 0.309 + 0.100*CL 0.280 + 0.101*CL 0.265 + 0.101*CL
tF 6.097 0.261 + 0.117*CL 0.256 + 0.117*CL 0.256 + 0.117*CL
tPLH 4.332 1.913 + 0.048*CL 1.914 + 0.048*CL 1.914 + 0.048*CL
tPHL 4.652 1.616 + 0.061*CL 1.614 + 0.061*CL 1.612 + 0.061*CL
TN to PAD tR 5.317 0.309 + 0.100*CL 0.280 + 0.101*CL 0.265 + 0.101*CL
tF 6.097 0.260 + 0.117*CL 0.256 + 0.117*CL 0.256 + 0.117*CL
tPLH 4.617 2.196 + 0.048*CL 2.197 + 0.048*CL 2.198 + 0.048*CL
tPHL 5.051 2.008 + 0.061*CL 2.009 + 0.061*CL 2.011 + 0.061*CL
tPLZ 1.950 1.950 + 0.000*CL 1.950 + 0.000*CL 1.950 + 0.000*CL
tPHZ 2.110 2.110 + 0.000*CL 2.110 + 0.000*CL 2.110 + 0.000*CL
EN to PAD tR 5.317 0.309 + 0.100*CL 0.280 + 0.101*CL 0.265 + 0.101*CL
tF 6.097 0.260 + 0.117*CL 0.256 + 0.117*CL 0.256 + 0.117*CL
tPLH 4.797 2.378 + 0.048*CL 2.379 + 0.048*CL 2.379 + 0.048*CL
tPHL 5.231 2.190 + 0.061*CL 2.191 + 0.061*CL 2.192 + 0.061*CL
tPLZ 2.033 2.033 + 0.000*CL 2.033 + 0.000*CL 2.033 + 0.000*CL
tPHZ 2.193 2.193 + 0.000*CL 2.193 + 0.000*CL 2.193 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-44 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT8
POT10
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.049 0.351 + 0.074*CL 0.303 + 0.075*CL 0.269 + 0.075*CL
tF 4.592 0.229 + 0.087*CL 0.216 + 0.088*CL 0.210 + 0.088*CL
tPLH 3.892 2.073 + 0.036*CL 2.078 + 0.036*CL 2.079 + 0.036*CL
tPHL 3.941 1.672 + 0.045*CL 1.667 + 0.045*CL 1.663 + 0.046*CL
TN to PAD tR 4.049 0.351 + 0.074*CL 0.303 + 0.075*CL 0.269 + 0.075*CL
tF 4.591 0.227 + 0.087*CL 0.214 + 0.088*CL 0.209 + 0.088*CL
tPLH 4.177 2.356 + 0.036*CL 2.362 + 0.036*CL 2.363 + 0.036*CL
tPHL 4.333 2.048 + 0.046*CL 2.051 + 0.046*CL 2.053 + 0.046*CL
tPLZ 2.078 2.078 + 0.000*CL 2.078 + 0.000*CL 2.078 + 0.000*CL
tPHZ 2.320 2.320 + 0.000*CL 2.319 + 0.000*CL 2.320 + 0.000*CL
EN to PAD tR 4.049 0.351 + 0.074*CL 0.303 + 0.075*CL 0.269 + 0.075*CL
tF 4.591 0.227 + 0.087*CL 0.214 + 0.088*CL 0.209 + 0.088*CL
tPLH 4.357 2.539 + 0.036*CL 2.543 + 0.036*CL 2.544 + 0.036*CL
tPHL 4.513 2.230 + 0.046*CL 2.232 + 0.046*CL 2.233 + 0.046*CL
tPLZ 2.160 2.160 + 0.000*CL 2.160 + 0.000*CL 2.160 + 0.000*CL
tPHZ 2.402 2.402 + 0.000*CL 2.402 + 0.000*CL 2.402 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 3.218 0.240 + 0.060*CL 0.209 + 0.060*CL 0.191 + 0.060*CL
tF 3.669 0.176 + 0.070*CL 0.166 + 0.070*CL 0.164 + 0.070*CL
tPLH 3.324 1.871 + 0.029*CL 1.873 + 0.029*CL 1.873 + 0.029*CL
tPHL 3.435 1.613 + 0.036*CL 1.612 + 0.036*CL 1.611 + 0.036*CL
TN to PAD tR 3.218 0.240 + 0.060*CL 0.209 + 0.060*CL 0.191 + 0.060*CL
tF 3.668 0.174 + 0.070*CL 0.166 + 0.070*CL 0.163 + 0.070*CL
tPLH 3.610 2.154 + 0.029*CL 2.157 + 0.029*CL 2.158 + 0.029*CL
tPHL 3.834 2.005 + 0.037*CL 2.008 + 0.037*CL 2.009 + 0.036*CL
tPLZ 1.978 1.978 + 0.000*CL 1.978 + 0.000*CL 1.978 + 0.000*CL
tPHZ 2.070 2.070 + 0.000*CL 2.070 + 0.000*CL 2.070 + 0.000*CL
EN to PAD tR 3.218 0.240 + 0.060*CL 0.209 + 0.060*CL 0.191 + 0.060*CL
tF 3.668 0.174 + 0.070*CL 0.166 + 0.070*CL 0.163 + 0.070*CL
tPLH 3.790 2.337 + 0.029*CL 2.338 + 0.029*CL 2.339 + 0.029*CL
tPHL 4.014 2.188 + 0.037*CL 2.189 + 0.037*CL 2.190 + 0.036*CL
tPLZ 2.061 2.061 + 0.000*CL 2.061 + 0.000*CL 2.061 + 0.000*CL
tPHZ 2.153 2.153 + 0.000*CL 2.153 + 0.000*CL 2.153 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-45 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT12
POT4SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 2.721 0.269 + 0.049*CL 0.232 + 0.050*CL 0.204 + 0.050*CL
tF 3.069 0.169 + 0.058*CL 0.155 + 0.058*CL 0.148 + 0.058*CL
tPLH 3.168 1.952 + 0.024*CL 1.958 + 0.024*CL 1.959 + 0.024*CL
tPHL 3.159 1.645 + 0.030*CL 1.642 + 0.030*CL 1.640 + 0.030*CL
TN to PAD tR 2.721 0.269 + 0.049*CL 0.232 + 0.050*CL 0.204 + 0.050*CL
tF 3.069 0.167 + 0.058*CL 0.154 + 0.058*CL 0.147 + 0.058*CL
tPLH 3.453 2.236 + 0.024*CL 2.242 + 0.024*CL 2.243 + 0.024*CL
tPHL 3.555 2.030 + 0.031*CL 2.033 + 0.030*CL 2.034 + 0.030*CL
tPLZ 2.043 2.043 + 0.000*CL 2.043 + 0.000*CL 2.043 + 0.000*CL
tPHZ 2.175 2.175 + 0.000*CL 2.175 + 0.000*CL 2.175 + 0.000*CL
EN to PAD tR 2.721 0.269 + 0.049*CL 0.232 + 0.050*CL 0.204 + 0.050*CL
tF 3.069 0.167 + 0.058*CL 0.154 + 0.058*CL 0.147 + 0.058*CL
tPLH 3.634 2.418 + 0.024*CL 2.424 + 0.024*CL 2.424 + 0.024*CL
tPHL 3.736 2.212 + 0.030*CL 2.214 + 0.030*CL 2.215 + 0.030*CL
tPLZ 2.126 2.126 + 0.000*CL 2.126 + 0.000*CL 2.126 + 0.000*CL
tPHZ 2.258 2.258 + 0.000*CL 2.258 + 0.000*CL 2.258 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 8.136 0.756 + 0.148*CL 0.663 + 0.149*CL 0.590 + 0.150*CL
tF 9.485 1.005 + 0.170*CL 0.893 + 0.172*CL 0.791 + 0.173*CL
tPLH 6.615 2.960 + 0.073*CL 2.981 + 0.073*CL 2.986 + 0.073*CL
tPHL 8.253 3.616 + 0.093*CL 3.678 + 0.092*CL 3.695 + 0.091*CL
TN to PAD tR 8.136 0.756 + 0.148*CL 0.663 + 0.149*CL 0.590 + 0.150*CL
tF 9.485 1.005 + 0.170*CL 0.893 + 0.172*CL 0.791 + 0.173*CL
tPLH 6.900 3.243 + 0.073*CL 3.265 + 0.073*CL 3.272 + 0.073*CL
tPHL 8.656 4.018 + 0.093*CL 4.080 + 0.092*CL 4.095 + 0.091*CL
tPLZ 2.052 2.052 + 0.000*CL 2.052 + 0.000*CL 2.052 + 0.000*CL
tPHZ 2.446 2.446 + 0.000*CL 2.446 + 0.000*CL 2.446 + 0.000*CL
EN to PAD tR 8.136 0.756 + 0.148*CL 0.663 + 0.149*CL 0.590 + 0.150*CL
tF 9.485 1.005 + 0.170*CL 0.893 + 0.172*CL 0.791 + 0.173*CL
tPLH 7.080 3.425 + 0.073*CL 3.446 + 0.073*CL 3.452 + 0.073*CL
tPHL 8.836 4.200 + 0.093*CL 4.261 + 0.092*CL 4.278 + 0.091*CL
tPLZ 2.135 2.135 + 0.000*CL 2.135 + 0.000*CL 2.135 + 0.000*CL
tPHZ 2.529 2.529 + 0.000*CL 2.529 + 0.000*CL 2.529 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-46 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT6SM
POT8SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.049 1.312 + 0.095*CL 1.251 + 0.096*CL 1.155 + 0.097*CL
tF 6.982 1.450 + 0.111*CL 1.413 + 0.111*CL 1.321 + 0.113*CL
tPLH 6.260 3.553 + 0.054*CL 3.735 + 0.051*CL 3.836 + 0.049*CL
tPHL 7.564 4.152 + 0.068*CL 4.374 + 0.064*CL 4.509 + 0.062*CL
TN to PAD tR 6.049 1.312 + 0.095*CL 1.252 + 0.096*CL 1.155 + 0.097*CL
tF 6.982 1.451 + 0.111*CL 1.414 + 0.111*CL 1.322 + 0.113*CL
tPLH 6.546 3.837 + 0.054*CL 4.020 + 0.051*CL 4.122 + 0.049*CL
tPHL 7.966 4.553 + 0.068*CL 4.777 + 0.064*CL 4.912 + 0.062*CL
tPLZ 2.331 2.331 + 0.000*CL 2.331 + 0.000*CL 2.331 + 0.000*CL
tPHZ 3.326 3.326 + 0.000*CL 3.326 + 0.000*CL 3.326 + 0.000*CL
EN to PAD tR 6.049 1.312 + 0.095*CL 1.252 + 0.096*CL 1.155 + 0.097*CL
tF 6.982 1.451 + 0.111*CL 1.414 + 0.111*CL 1.322 + 0.113*CL
tPLH 6.726 4.020 + 0.054*CL 4.201 + 0.051*CL 4.303 + 0.049*CL
tPHL 8.147 4.735 + 0.068*CL 4.958 + 0.064*CL 5.094 + 0.062*CL
tPLZ 2.414 2.414 + 0.000*CL 2.414 + 0.000*CL 2.414 + 0.000*CL
tPHZ 3.409 3.409 + 0.000*CL 3.409 + 0.000*CL 3.409 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.157 1.657 + 0.070*CL 1.671 + 0.070*CL 1.601 + 0.071*CL
tF 5.712 1.575 + 0.083*CL 1.605 + 0.082*CL 1.549 + 0.083*CL
tPLH 5.906 3.567 + 0.047*CL 3.850 + 0.041*CL 4.043 + 0.039*CL
tPHL 6.869 4.083 + 0.056*CL 4.352 + 0.050*CL 4.541 + 0.048*CL
TN to PAD tR 5.158 1.661 + 0.070*CL 1.673 + 0.070*CL 1.602 + 0.071*CL
tF 5.723 1.615 + 0.082*CL 1.625 + 0.082*CL 1.561 + 0.083*CL
tPLH 6.191 3.850 + 0.047*CL 4.135 + 0.041*CL 4.328 + 0.039*CL
tPHL 7.260 4.454 + 0.056*CL 4.735 + 0.050*CL 4.930 + 0.048*CL
tPLZ 2.936 2.936 + 0.000*CL 2.936 + 0.000*CL 2.936 + 0.000*CL
tPHZ 4.179 4.179 + 0.000*CL 4.179 + 0.000*CL 4.179 + 0.000*CL
EN to PAD tR 5.158 1.661 + 0.070*CL 1.673 + 0.070*CL 1.602 + 0.071*CL
tF 5.723 1.615 + 0.082*CL 1.625 + 0.082*CL 1.561 + 0.083*CL
tPLH 6.372 4.033 + 0.047*CL 4.316 + 0.041*CL 4.509 + 0.039*CL
tPHL 7.440 4.636 + 0.056*CL 4.917 + 0.050*CL 5.111 + 0.048*CL
tPLZ 3.018 3.018 + 0.000*CL 3.018 + 0.000*CL 3.018 + 0.000*CL
tPHZ 4.262 4.262 + 0.000*CL 4.262 + 0.000*CL 4.262 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-47 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT10SM
POT12SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.208 1.327 + 0.058*CL 1.366 + 0.057*CL 1.346 + 0.057*CL
tF 4.733 1.366 + 0.067*CL 1.422 + 0.066*CL 1.407 + 0.066*CL
tPLH 5.547 3.634 + 0.038*CL 3.859 + 0.034*CL 4.027 + 0.032*CL
tPHL 6.428 4.108 + 0.046*CL 4.352 + 0.042*CL 4.533 + 0.039*CL
TN to PAD tR 4.208 1.327 + 0.058*CL 1.366 + 0.057*CL 1.346 + 0.057*CL
tF 4.736 1.381 + 0.067*CL 1.430 + 0.066*CL 1.412 + 0.066*CL
tPLH 5.833 3.920 + 0.038*CL 4.145 + 0.034*CL 4.313 + 0.032*CL
tPHL 6.826 4.499 + 0.047*CL 4.747 + 0.042*CL 4.931 + 0.039*CL
tPLZ 2.936 2.936 + 0.000*CL 2.936 + 0.000*CL 2.936 + 0.000*CL
tPHZ 4.179 4.179 + 0.000*CL 4.179 + 0.000*CL 4.179 + 0.000*CL
EN to PAD tR 4.208 1.327 + 0.058*CL 1.366 + 0.057*CL 1.346 + 0.057*CL
tF 4.736 1.381 + 0.067*CL 1.430 + 0.066*CL 1.412 + 0.066*CL
tPLH 6.014 4.102 + 0.038*CL 4.326 + 0.034*CL 4.494 + 0.032*CL
tPHL 7.007 4.681 + 0.047*CL 4.928 + 0.042*CL 5.112 + 0.039*CL
tPLZ 3.018 3.018 + 0.000*CL 3.018 + 0.000*CL 3.018 + 0.000*CL
tPHZ 4.262 4.261 + 0.000*CL 4.262 + 0.000*CL 4.262 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.196 1.636 + 0.051*CL 1.780 + 0.048*CL 1.853 + 0.047*CL
tF 4.558 1.568 + 0.060*CL 1.742 + 0.056*CL 1.824 + 0.055*CL
tPLH 5.781 3.826 + 0.039*CL 4.130 + 0.033*CL 4.385 + 0.030*CL
tPHL 6.623 4.382 + 0.045*CL 4.677 + 0.039*CL 4.927 + 0.036*CL
TN to PAD tR 4.196 1.637 + 0.051*CL 1.782 + 0.048*CL 1.854 + 0.047*CL
tF 4.583 1.655 + 0.059*CL 1.790 + 0.056*CL 1.854 + 0.055*CL
tPLH 6.068 4.111 + 0.039*CL 4.416 + 0.033*CL 4.672 + 0.030*CL
tPHL 7.004 4.722 + 0.046*CL 5.042 + 0.039*CL 5.304 + 0.036*CL
tPLZ 3.304 3.304 + 0.000*CL 3.304 + 0.000*CL 3.304 + 0.000*CL
tPHZ 5.058 5.057 + 0.000*CL 5.057 + 0.000*CL 5.058 + 0.000*CL
EN to PAD tR 4.196 1.637 + 0.051*CL 1.782 + 0.048*CL 1.854 + 0.047*CL
tF 4.583 1.655 + 0.059*CL 1.790 + 0.056*CL 1.854 + 0.055*CL
tPLH 6.248 4.294 + 0.039*CL 4.597 + 0.033*CL 4.852 + 0.030*CL
tPHL 7.184 4.905 + 0.046*CL 5.223 + 0.039*CL 5.485 + 0.036*CL
tPLZ 3.387 3.387 + 0.000*CL 3.387 + 0.000*CL 3.387 + 0.000*CL
tPHZ 5.140 5.140 + 0.000*CL 5.140 + 0.000*CL 5.140 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-48 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
POT10SH
POT12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.218 2.939 + 0.066*CL 3.224 + 0.060*CL 3.411 + 0.057*CL
tF 6.448 2.737 + 0.074*CL 3.005 + 0.069*CL 3.175 + 0.067*CL
tPLH 8.547 5.619 + 0.059*CL 6.170 + 0.048*CL 6.638 + 0.041*CL
tPHL 9.261 6.045 + 0.064*CL 6.571 + 0.054*CL 7.015 + 0.048*CL
TN to PAD tR 6.220 2.942 + 0.066*CL 3.226 + 0.060*CL 3.414 + 0.057*CL
tF 6.460 2.782 + 0.074*CL 3.029 + 0.069*CL 3.189 + 0.066*CL
tPLH 8.834 5.906 + 0.059*CL 6.457 + 0.048*CL 6.927 + 0.041*CL
tPHL 9.657 6.424 + 0.065*CL 6.961 + 0.054*CL 7.411 + 0.048*CL
tPLZ 3.415 3.415 + 0.000*CL 3.415 + 0.000*CL 3.414 + 0.000*CL
tPHZ 5.160 5.160 + 0.000*CL 5.160 + 0.000*CL 5.160 + 0.000*CL
EN to PAD tR 6.220 2.942 + 0.066*CL 3.226 + 0.060*CL 3.414 + 0.057*CL
tF 6.460 2.782 + 0.074*CL 3.029 + 0.069*CL 3.189 + 0.066*CL
tPLH 9.014 6.088 + 0.059*CL 6.639 + 0.048*CL 7.103 + 0.041*CL
tPHL 9.837 6.607 + 0.065*CL 7.142 + 0.054*CL 7.594 + 0.048*CL
tPLZ 3.498 3.498 + 0.000*CL 3.498 + 0.000*CL 3.498 + 0.000*CL
tPHZ 5.243 5.242 + 0.000*CL 5.243 + 0.000*CL 5.243 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 6.593 3.555 + 0.061*CL 3.937 + 0.053*CL 4.210 + 0.049*CL
tF 6.548 3.126 + 0.068*CL 3.508 + 0.061*CL 3.773 + 0.057*CL
tPLH 9.056 5.919 + 0.063*CL 6.599 + 0.049*CL 7.177 + 0.041*CL
tPHL 9.722 6.468 + 0.065*CL 7.071 + 0.053*CL 7.594 + 0.046*CL
TN to PAD tR 6.596 3.560 + 0.061*CL 3.941 + 0.053*CL 4.214 + 0.049*CL
tF 6.600 3.299 + 0.066*CL 3.606 + 0.060*CL 3.832 + 0.057*CL
tPLH 9.344 6.206 + 0.063*CL 6.887 + 0.049*CL 7.465 + 0.041*CL
tPHL 10.098 6.787 + 0.066*CL 7.426 + 0.053*CL 7.966 + 0.046*CL
tPLZ 3.783 3.783 + 0.000*CL 3.783 + 0.000*CL 3.783 + 0.000*CL
tPHZ 6.038 6.037 + 0.000*CL 6.038 + 0.000*CL 6.038 + 0.000*CL
EN to PAD tR 6.596 3.560 + 0.061*CL 3.941 + 0.053*CL 4.214 + 0.049*CL
tF 6.600 3.299 + 0.066*CL 3.606 + 0.060*CL 3.832 + 0.057*CL
tPLH 9.525 6.388 + 0.063*CL 7.070 + 0.049*CL 7.641 + 0.041*CL
tPHL 10.278 6.970 + 0.066*CL 7.608 + 0.053*CL 8.145 + 0.046*CL
tPLZ 3.866 3.866 + 0.000*CL 3.866 + 0.000*CL 3.866 + 0.000*CL
tPHZ 6.121 6.120 + 0.000*CL 6.121 + 0.000*CL 6.121 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-49 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT1
PHOT2
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 42.148 1.623 + 0.811*CL 1.624 + 0.810*CL 1.621 + 0.811*CL
tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPLH 20.687 1.940 + 0.375*CL 1.939 + 0.375*CL 1.942 + 0.375*CL
tPHL 17.678 2.113 + 0.311*CL 2.114 + 0.311*CL 2.114 + 0.311*CL
TN to PAD tR 42.146 1.623 + 0.810*CL 1.620 + 0.811*CL 1.623 + 0.810*CL
tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPLH 21.198 2.448 + 0.375*CL 2.448 + 0.375*CL 2.451 + 0.375*CL
tPHL 18.144 2.577 + 0.311*CL 2.578 + 0.311*CL 2.581 + 0.311*CL
tPLZ 1.813 1.813 + 0.000*CL 1.813 + 0.000*CL 1.813 + 0.000*CL
tPHZ 1.525 1.525 + 0.000*CL 1.525 + 0.000*CL 1.525 + 0.000*CL
EN to PAD tR 42.146 1.623 + 0.810*CL 1.620 + 0.811*CL 1.623 + 0.810*CL
tF 33.014 1.269 + 0.635*CL 1.270 + 0.635*CL 1.267 + 0.635*CL
tPLH 21.379 2.629 + 0.375*CL 2.633 + 0.375*CL 2.630 + 0.375*CL
tPHL 18.324 2.761 + 0.311*CL 2.760 + 0.311*CL 2.757 + 0.311*CL
tPLZ 1.896 1.896 + 0.000*CL 1.896 + 0.000*CL 1.896 + 0.000*CL
tPHZ 1.608 1.608 + 0.000*CL 1.608 + 0.000*CL 1.608 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 21.098 0.836 + 0.405*CL 0.836 + 0.405*CL 0.833 + 0.405*CL
tF 18.188 0.706 + 0.350*CL 0.702 + 0.350*CL 0.705 + 0.350*CL
tPLH 10.983 1.609 + 0.187*CL 1.609 + 0.187*CL 1.609 + 0.187*CL
tPHL 10.634 1.738 + 0.178*CL 1.738 + 0.178*CL 1.741 + 0.178*CL
TN to PAD tR 21.098 0.836 + 0.405*CL 0.836 + 0.405*CL 0.833 + 0.405*CL
tF 18.188 0.706 + 0.350*CL 0.702 + 0.350*CL 0.705 + 0.350*CL
tPLH 11.494 2.118 + 0.188*CL 2.120 + 0.187*CL 2.120 + 0.187*CL
tPHL 11.101 2.202 + 0.178*CL 2.205 + 0.178*CL 2.205 + 0.178*CL
tPLZ 1.669 1.669 + 0.000*CL 1.669 + 0.000*CL 1.669 + 0.000*CL
tPHZ 1.572 1.572 + 0.000*CL 1.572 + 0.000*CL 1.572 + 0.000*CL
EN to PAD tR 21.098 0.836 + 0.405*CL 0.836 + 0.405*CL 0.833 + 0.405*CL
tF 18.188 0.706 + 0.350*CL 0.702 + 0.350*CL 0.705 + 0.350*CL
tPLH 11.674 2.301 + 0.187*CL 2.300 + 0.187*CL 2.300 + 0.187*CL
tPHL 11.281 2.385 + 0.178*CL 2.385 + 0.178*CL 2.388 + 0.178*CL
tPLZ 1.752 1.752 + 0.000*CL 1.752 + 0.000*CL 1.752 + 0.000*CL
tPHZ 1.655 1.655 + 0.000*CL 1.655 + 0.000*CL 1.655 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-50 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT4
PHOT6
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 10.563 0.433 + 0.203*CL 0.431 + 0.203*CL 0.431 + 0.203*CL
tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPLH 6.206 1.519 + 0.094*CL 1.519 + 0.094*CL 1.519 + 0.094*CL
tPHL 6.074 1.626 + 0.089*CL 1.626 + 0.089*CL 1.627 + 0.089*CL
TN to PAD tR 10.563 0.433 + 0.203*CL 0.431 + 0.203*CL 0.431 + 0.203*CL
tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPLH 6.717 2.027 + 0.094*CL 2.029 + 0.094*CL 2.031 + 0.094*CL
tPHL 6.540 2.090 + 0.089*CL 2.091 + 0.089*CL 2.090 + 0.089*CL
tPLZ 1.821 1.821 + 0.000*CL 1.821 + 0.000*CL 1.821 + 0.000*CL
tPHZ 1.665 1.665 + 0.000*CL 1.665 + 0.000*CL 1.664 + 0.000*CL
EN to PAD tR 10.563 0.433 + 0.203*CL 0.431 + 0.203*CL 0.431 + 0.203*CL
tF 9.114 0.371 + 0.175*CL 0.371 + 0.175*CL 0.372 + 0.175*CL
tPLH 6.897 2.210 + 0.094*CL 2.210 + 0.094*CL 2.210 + 0.094*CL
tPHL 6.720 2.272 + 0.089*CL 2.272 + 0.089*CL 2.272 + 0.089*CL
tPLZ 1.903 1.903 + 0.000*CL 1.903 + 0.000*CL 1.903 + 0.000*CL
tPHZ 1.748 1.748 + 0.000*CL 1.748 + 0.000*CL 1.748 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.047 0.293 + 0.135*CL 0.294 + 0.135*CL 0.293 + 0.135*CL
tF 6.082 0.254 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPLH 4.603 1.478 + 0.063*CL 1.478 + 0.062*CL 1.479 + 0.062*CL
tPHL 4.551 1.586 + 0.059*CL 1.586 + 0.059*CL 1.586 + 0.059*CL
TN to PAD tR 7.047 0.293 + 0.135*CL 0.294 + 0.135*CL 0.293 + 0.135*CL
tF 6.082 0.254 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPLH 5.114 1.986 + 0.063*CL 1.988 + 0.063*CL 1.988 + 0.063*CL
tPHL 5.017 2.049 + 0.059*CL 2.050 + 0.059*CL 2.051 + 0.059*CL
tPLZ 1.811 1.811 + 0.000*CL 1.811 + 0.000*CL 1.811 + 0.000*CL
tPHZ 1.667 1.667 + 0.000*CL 1.667 + 0.000*CL 1.667 + 0.000*CL
EN to PAD tR 7.047 0.293 + 0.135*CL 0.294 + 0.135*CL 0.293 + 0.135*CL
tF 6.082 0.254 + 0.117*CL 0.254 + 0.117*CL 0.255 + 0.117*CL
tPLH 5.294 2.169 + 0.063*CL 2.169 + 0.062*CL 2.169 + 0.062*CL
tPHL 5.197 2.231 + 0.059*CL 2.232 + 0.059*CL 2.232 + 0.059*CL
tPLZ 1.893 1.893 + 0.000*CL 1.893 + 0.000*CL 1.893 + 0.000*CL
tPHZ 1.750 1.750 + 0.000*CL 1.750 + 0.000*CL 1.750 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-51 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT8
PHOT10
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.293 0.229 + 0.101*CL 0.228 + 0.101*CL 0.227 + 0.101*CL
tF 4.572 0.205 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPLH 3.835 1.491 + 0.047*CL 1.492 + 0.047*CL 1.492 + 0.047*CL
tPHL 3.818 1.593 + 0.044*CL 1.594 + 0.044*CL 1.594 + 0.044*CL
TN to PAD tR 5.293 0.229 + 0.101*CL 0.228 + 0.101*CL 0.227 + 0.101*CL
tF 4.572 0.205 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPLH 4.346 1.999 + 0.047*CL 2.001 + 0.047*CL 2.002 + 0.047*CL
tPHL 4.283 2.056 + 0.045*CL 2.058 + 0.045*CL 2.059 + 0.044*CL
tPLZ 1.887 1.887 + 0.000*CL 1.887 + 0.000*CL 1.887 + 0.000*CL
tPHZ 1.714 1.714 + 0.000*CL 1.714 + 0.000*CL 1.714 + 0.000*CL
EN to PAD tR 5.293 0.229 + 0.101*CL 0.228 + 0.101*CL 0.227 + 0.101*CL
tF 4.572 0.205 + 0.087*CL 0.202 + 0.087*CL 0.201 + 0.087*CL
tPLH 4.526 2.182 + 0.047*CL 2.182 + 0.047*CL 2.183 + 0.047*CL
tPHL 4.463 2.239 + 0.044*CL 2.239 + 0.044*CL 2.239 + 0.044*CL
tPLZ 1.969 1.969 + 0.000*CL 1.969 + 0.000*CL 1.969 + 0.000*CL
tPHZ 1.796 1.796 + 0.000*CL 1.796 + 0.000*CL 1.796 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.242 0.194 + 0.081*CL 0.191 + 0.081*CL 0.190 + 0.081*CL
tF 3.669 0.183 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPLH 3.391 1.515 + 0.038*CL 1.516 + 0.038*CL 1.516 + 0.037*CL
tPHL 3.392 1.613 + 0.036*CL 1.613 + 0.036*CL 1.613 + 0.036*CL
TN to PAD tR 4.242 0.194 + 0.081*CL 0.191 + 0.081*CL 0.190 + 0.081*CL
tF 3.669 0.183 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPLH 3.901 2.023 + 0.038*CL 2.024 + 0.038*CL 2.025 + 0.038*CL
tPHL 3.858 2.075 + 0.036*CL 2.077 + 0.036*CL 2.078 + 0.036*CL
tPLZ 1.961 1.961 + 0.000*CL 1.961 + 0.000*CL 1.961 + 0.000*CL
tPHZ 1.760 1.760 + 0.000*CL 1.760 + 0.000*CL 1.760 + 0.000*CL
EN to PAD tR 4.242 0.194 + 0.081*CL 0.191 + 0.081*CL 0.190 + 0.081*CL
tF 3.669 0.183 + 0.070*CL 0.175 + 0.070*CL 0.172 + 0.070*CL
tPLH 4.081 2.205 + 0.038*CL 2.206 + 0.038*CL 2.206 + 0.038*CL
tPHL 4.038 2.258 + 0.036*CL 2.258 + 0.036*CL 2.258 + 0.036*CL
tPLZ 2.045 2.045 + 0.000*CL 2.045 + 0.000*CL 2.045 + 0.000*CL
tPHZ 1.842 1.842 + 0.000*CL 1.842 + 0.000*CL 1.842 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-52 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT12
PHOT4SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 3.544 0.178 + 0.067*CL 0.169 + 0.067*CL 0.166 + 0.068*CL
tF 3.071 0.176 + 0.058*CL 0.163 + 0.058*CL 0.156 + 0.058*CL
tPLH 3.108 1.545 + 0.031*CL 1.546 + 0.031*CL 1.546 + 0.031*CL
tPHL 3.121 1.637 + 0.030*CL 1.638 + 0.030*CL 1.638 + 0.030*CL
TN to PAD tR 3.544 0.178 + 0.067*CL 0.169 + 0.067*CL 0.166 + 0.068*CL
tF 3.071 0.176 + 0.058*CL 0.163 + 0.058*CL 0.156 + 0.058*CL
tPLH 3.617 2.051 + 0.031*CL 2.053 + 0.031*CL 2.054 + 0.031*CL
tPHL 3.586 2.100 + 0.030*CL 2.102 + 0.030*CL 2.103 + 0.030*CL
tPLZ 2.037 2.037 + 0.000*CL 2.037 + 0.000*CL 2.037 + 0.000*CL
tPHZ 1.806 1.806 + 0.000*CL 1.806 + 0.000*CL 1.806 + 0.000*CL
EN to PAD tR 3.544 0.178 + 0.067*CL 0.169 + 0.067*CL 0.166 + 0.068*CL
tF 3.071 0.176 + 0.058*CL 0.163 + 0.058*CL 0.156 + 0.058*CL
tPLH 3.798 2.233 + 0.031*CL 2.235 + 0.031*CL 2.235 + 0.031*CL
tPHL 3.766 2.282 + 0.030*CL 2.283 + 0.030*CL 2.283 + 0.030*CL
tPLZ 2.119 2.119 + 0.000*CL 2.119 + 0.000*CL 2.119 + 0.000*CL
tPHZ 1.889 1.889 + 0.000*CL 1.889 + 0.000*CL 1.889 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 10.608 0.513 + 0.202*CL 0.486 + 0.202*CL 0.477 + 0.203*CL
tF 9.436 0.949 + 0.170*CL 0.845 + 0.172*CL 0.747 + 0.173*CL
tPLH 6.731 2.042 + 0.094*CL 2.043 + 0.094*CL 2.045 + 0.094*CL
tPHL 7.832 3.323 + 0.090*CL 3.373 + 0.089*CL 3.384 + 0.089*CL
TN to PAD tR 10.608 0.513 + 0.202*CL 0.486 + 0.202*CL 0.477 + 0.203*CL
tF 9.436 0.949 + 0.170*CL 0.845 + 0.172*CL 0.747 + 0.173*CL
tPLH 7.243 2.551 + 0.094*CL 2.554 + 0.094*CL 2.555 + 0.094*CL
tPHL 8.297 3.786 + 0.090*CL 3.836 + 0.089*CL 3.850 + 0.089*CL
tPLZ 1.982 1.982 + 0.000*CL 1.982 + 0.000*CL 1.982 + 0.000*CL
tPHZ 1.929 1.929 + 0.000*CL 1.929 + 0.000*CL 1.929 + 0.000*CL
EN to PAD tR 10.608 0.513 + 0.202*CL 0.486 + 0.202*CL 0.477 + 0.203*CL
tF 9.436 0.949 + 0.170*CL 0.845 + 0.172*CL 0.747 + 0.173*CL
tPLH 7.423 2.734 + 0.094*CL 2.735 + 0.094*CL 2.737 + 0.094*CL
tPHL 8.478 3.969 + 0.090*CL 4.017 + 0.089*CL 4.033 + 0.089*CL
tPLZ 2.064 2.064 + 0.000*CL 2.064 + 0.000*CL 2.064 + 0.000*CL
tPHZ 2.011 2.011 + 0.000*CL 2.011 + 0.000*CL 2.011 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-53 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT6SM
PHOT8SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 7.208 0.611 + 0.132*CL 0.535 + 0.133*CL 0.477 + 0.134*CL
tF 6.913 1.361 + 0.111*CL 1.334 + 0.112*CL 1.254 + 0.113*CL
tPLH 5.489 2.346 + 0.063*CL 2.361 + 0.063*CL 2.364 + 0.063*CL
tPHL 7.110 3.797 + 0.066*CL 4.005 + 0.062*CL 4.132 + 0.060*CL
TN to PAD tR 7.208 0.611 + 0.132*CL 0.535 + 0.133*CL 0.477 + 0.134*CL
tF 6.914 1.361 + 0.111*CL 1.334 + 0.112*CL 1.251 + 0.113*CL
tPLH 6.001 2.855 + 0.063*CL 2.871 + 0.063*CL 2.875 + 0.063*CL
tPHL 7.575 4.261 + 0.066*CL 4.470 + 0.062*CL 4.597 + 0.060*CL
tPLZ 2.288 2.288 + 0.000*CL 2.288 + 0.000*CL 2.288 + 0.000*CL
tPHZ 2.316 2.316 + 0.000*CL 2.316 + 0.000*CL 2.316 + 0.000*CL
EN to PAD tR 7.208 0.611 + 0.132*CL 0.535 + 0.133*CL 0.477 + 0.134*CL
tF 6.914 1.361 + 0.111*CL 1.334 + 0.112*CL 1.251 + 0.113*CL
tPLH 6.181 3.038 + 0.063*CL 3.053 + 0.063*CL 3.056 + 0.063*CL
tPHL 7.755 4.443 + 0.066*CL 4.651 + 0.062*CL 4.779 + 0.060*CL
tPLZ 2.371 2.372 + 0.000*CL 2.371 + 0.000*CL 2.371 + 0.000*CL
tPHZ 2.399 2.399 + 0.000*CL 2.399 + 0.000*CL 2.399 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.686 0.878 + 0.096*CL 0.795 + 0.098*CL 0.705 + 0.099*CL
tF 6.065 1.797 + 0.085*CL 1.914 + 0.083*CL 1.934 + 0.083*CL
tPLH 5.127 2.672 + 0.049*CL 2.754 + 0.047*CL 2.786 + 0.047*CL
tPHL 7.136 4.164 + 0.059*CL 4.513 + 0.052*CL 4.784 + 0.049*CL
TN to PAD tR 5.687 0.884 + 0.096*CL 0.796 + 0.098*CL 0.707 + 0.099*CL
tF 6.065 1.798 + 0.085*CL 1.914 + 0.083*CL 1.935 + 0.083*CL
tPLH 5.638 3.178 + 0.049*CL 3.263 + 0.047*CL 3.296 + 0.047*CL
tPHL 7.601 4.628 + 0.059*CL 4.977 + 0.052*CL 5.248 + 0.049*CL
tPLZ 2.593 2.593 + 0.000*CL 2.593 + 0.000*CL 2.592 + 0.000*CL
tPHZ 2.702 2.702 + 0.000*CL 2.702 + 0.000*CL 2.702 + 0.000*CL
EN to PAD tR 5.687 0.884 + 0.096*CL 0.796 + 0.098*CL 0.707 + 0.099*CL
tF 6.065 1.798 + 0.085*CL 1.914 + 0.083*CL 1.935 + 0.083*CL
tPLH 5.818 3.361 + 0.049*CL 3.444 + 0.047*CL 3.477 + 0.047*CL
tPHL 7.782 4.810 + 0.059*CL 5.159 + 0.052*CL 5.430 + 0.049*CL
tPLZ 2.675 2.676 + 0.000*CL 2.675 + 0.000*CL 2.675 + 0.000*CL
tPHZ 2.785 2.785 + 0.000*CL 2.785 + 0.000*CL 2.785 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-54 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT10SM
PHOT12SM
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.500 0.605 + 0.078*CL 0.552 + 0.079*CL 0.500 + 0.080*CL
tF 5.289 1.831 + 0.069*CL 1.979 + 0.066*CL 2.030 + 0.066*CL
tPLH 4.366 2.445 + 0.038*CL 2.484 + 0.038*CL 2.496 + 0.037*CL
tPHL 6.592 3.984 + 0.052*CL 4.351 + 0.045*CL 4.644 + 0.041*CL
TN to PAD tR 4.509 0.633 + 0.078*CL 0.572 + 0.079*CL 0.511 + 0.080*CL
tF 5.290 1.834 + 0.069*CL 1.981 + 0.066*CL 2.031 + 0.066*CL
tPLH 4.854 2.901 + 0.039*CL 2.958 + 0.038*CL 2.980 + 0.038*CL
tPHL 7.058 4.447 + 0.052*CL 4.816 + 0.045*CL 5.109 + 0.041*CL
tPLZ 3.338 3.338 + 0.000*CL 3.338 + 0.000*CL 3.338 + 0.000*CL
tPHZ 2.683 2.683 + 0.000*CL 2.683 + 0.000*CL 2.683 + 0.000*CL
EN to PAD tR 4.509 0.633 + 0.078*CL 0.572 + 0.079*CL 0.511 + 0.080*CL
tF 5.290 1.834 + 0.069*CL 1.981 + 0.066*CL 2.031 + 0.066*CL
tPLH 5.035 3.083 + 0.039*CL 3.139 + 0.038*CL 3.161 + 0.038*CL
tPHL 7.238 4.630 + 0.052*CL 4.997 + 0.045*CL 5.290 + 0.041*CL
tPLZ 3.421 3.421 + 0.000*CL 3.421 + 0.000*CL 3.420 + 0.000*CL
tPHZ 2.765 2.766 + 0.000*CL 2.765 + 0.000*CL 2.765 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 3.998 0.788 + 0.064*CL 0.767 + 0.065*CL 0.718 + 0.065*CL
tF 4.487 1.515 + 0.059*CL 1.662 + 0.057*CL 1.739 + 0.055*CL
tPLH 4.328 2.602 + 0.035*CL 2.705 + 0.032*CL 2.764 + 0.032*CL
tPHL 6.164 3.947 + 0.044*CL 4.249 + 0.038*CL 4.500 + 0.035*CL
TN to PAD tR 4.011 0.830 + 0.064*CL 0.793 + 0.064*CL 0.733 + 0.065*CL
tF 4.488 1.518 + 0.059*CL 1.663 + 0.056*CL 1.740 + 0.055*CL
tPLH 4.822 3.068 + 0.035*CL 3.188 + 0.033*CL 3.255 + 0.032*CL
tPHL 6.629 4.410 + 0.044*CL 4.713 + 0.038*CL 4.964 + 0.035*CL
tPLZ 3.338 3.338 + 0.000*CL 3.338 + 0.000*CL 3.338 + 0.000*CL
tPHZ 3.069 3.069 + 0.000*CL 3.069 + 0.000*CL 3.068 + 0.000*CL
EN to PAD tR 4.011 0.830 + 0.064*CL 0.793 + 0.064*CL 0.733 + 0.065*CL
tF 4.488 1.518 + 0.059*CL 1.663 + 0.056*CL 1.740 + 0.055*CL
tPLH 5.002 3.251 + 0.035*CL 3.369 + 0.033*CL 3.436 + 0.032*CL
tPHL 6.809 4.592 + 0.044*CL 4.894 + 0.038*CL 5.145 + 0.035*CL
tPLZ 3.421 3.421 + 0.000*CL 3.421 + 0.000*CL 3.420 + 0.000*CL
tPHZ 3.151 3.151 + 0.000*CL 3.151 + 0.000*CL 3.151 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-55 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PHOT10SH
PHOT12SH
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 5.273 1.448 + 0.077*CL 1.465 + 0.076*CL 1.414 + 0.077*CL
tF 6.224 2.449 + 0.075*CL 2.727 + 0.070*CL 2.915 + 0.067*CL
tPLH 5.937 3.601 + 0.047*CL 3.843 + 0.042*CL 4.013 + 0.040*CL
tPHL 8.404 5.281 + 0.062*CL 5.782 + 0.052*CL 6.211 + 0.047*CL
TN to PAD tR 5.279 1.469 + 0.076*CL 1.475 + 0.076*CL 1.420 + 0.077*CL
tF 6.225 2.451 + 0.075*CL 2.728 + 0.070*CL 2.916 + 0.067*CL
tPLH 6.445 4.100 + 0.047*CL 4.347 + 0.042*CL 4.520 + 0.040*CL
tPHL 8.870 5.745 + 0.062*CL 6.247 + 0.052*CL 6.677 + 0.047*CL
tPLZ 3.421 3.422 + 0.000*CL 3.421 + 0.000*CL 3.421 + 0.000*CL
tPHZ 3.146 3.146 + 0.000*CL 3.146 + 0.000*CL 3.146 + 0.000*CL
EN to PAD tR 5.279 1.469 + 0.076*CL 1.475 + 0.076*CL 1.420 + 0.077*CL
tF 6.225 2.451 + 0.075*CL 2.728 + 0.070*CL 2.916 + 0.067*CL
tPLH 6.625 4.282 + 0.047*CL 4.529 + 0.042*CL 4.701 + 0.040*CL
tPHL 9.050 5.927 + 0.062*CL 6.428 + 0.052*CL 6.860 + 0.047*CL
tPLZ 3.504 3.504 + 0.000*CL 3.504 + 0.000*CL 3.503 + 0.000*CL
tPHZ 3.228 3.228 + 0.000*CL 3.228 + 0.000*CL 3.228 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.965 1.691 + 0.065*CL 1.798 + 0.063*CL 1.812 + 0.063*CL
tF 6.246 2.790 + 0.069*CL 3.146 + 0.062*CL 3.418 + 0.058*CL
tPLH 6.084 3.853 + 0.045*CL 4.156 + 0.039*CL 4.395 + 0.035*CL
tPHL 8.726 5.553 + 0.063*CL 6.134 + 0.052*CL 6.641 + 0.045*CL
TN to PAD tR 4.984 1.756 + 0.065*CL 1.834 + 0.063*CL 1.833 + 0.063*CL
tF 6.248 2.799 + 0.069*CL 3.151 + 0.062*CL 3.421 + 0.058*CL
tPLH 6.585 4.330 + 0.045*CL 4.647 + 0.039*CL 4.893 + 0.035*CL
tPHL 9.191 6.014 + 0.064*CL 6.599 + 0.052*CL 7.103 + 0.045*CL
tPLZ 3.826 3.827 + 0.000*CL 3.826 + 0.000*CL 3.826 + 0.000*CL
tPHZ 3.531 3.531 + 0.000*CL 3.531 + 0.000*CL 3.531 + 0.000*CL
EN to PAD tR 4.984 1.756 + 0.065*CL 1.834 + 0.063*CL 1.833 + 0.063*CL
tF 6.248 2.799 + 0.069*CL 3.151 + 0.062*CL 3.421 + 0.058*CL
tPLH 6.765 4.512 + 0.045*CL 4.829 + 0.039*CL 5.074 + 0.035*CL
tPHL 9.371 6.197 + 0.063*CL 6.780 + 0.052*CL 7.283 + 0.045*CL
tPLZ 3.909 3.910 + 0.000*CL 3.909 + 0.000*CL 3.909 + 0.000*CL
tPHZ 3.614 3.614 + 0.000*CL 3.614 + 0.000*CL 3.614 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-56 Samsung ASIC
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PTOT1
PTOT2
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 44.026 2.843 + 0.824*CL 2.992 + 0.821*CL 3.100 + 0.819*CL
tF 33.890 2.747 + 0.623*CL 2.704 + 0.624*CL 2.677 + 0.624*CL
tPLH 21.904 3.047 + 0.377*CL 3.102 + 0.376*CL 3.138 + 0.376*CL
tPHL 17.900 2.290 + 0.312*CL 2.310 + 0.312*CL 2.325 + 0.312*CL
TN to PAD tR 44.026 2.843 + 0.824*CL 2.992 + 0.821*CL 3.100 + 0.819*CL
tF 33.854 2.744 + 0.622*CL 2.692 + 0.623*CL 2.662 + 0.624*CL
tPLH 22.415 3.558 + 0.377*CL 3.611 + 0.376*CL 3.650 + 0.376*CL
tPHL 18.285 2.735 + 0.311*CL 2.743 + 0.311*CL 2.761 + 0.311*CL
tPLZ 1.641 1.641 + 0.000*CL 1.641 + 0.000*CL 1.641 + 0.000*CL
tPHZ 5.196 5.198 + 0.000*CL 5.196 + 0.000*CL 5.196 + 0.000*CL
EN to PAD tR 44.026 2.843 + 0.824*CL 2.992 + 0.821*CL 3.100 + 0.819*CL
tF 33.854 2.744 + 0.622*CL 2.692 + 0.623*CL 2.662 + 0.624*CL
tPLH 22.596 3.739 + 0.377*CL 3.794 + 0.376*CL 3.830 + 0.376*CL
tPHL 18.465 2.918 + 0.311*CL 2.925 + 0.311*CL 2.937 + 0.311*CL
tPLZ 1.724 1.724 + 0.000*CL 1.724 + 0.000*CL 1.724 + 0.000*CL
tPHZ 5.279 5.281 + 0.000*CL 5.279 + 0.000*CL 5.278 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 22.250 1.485 + 0.415*CL 1.620 + 0.413*CL 1.725 + 0.411*CL
tF 17.034 1.379 + 0.313*CL 1.416 + 0.312*CL 1.419 + 0.312*CL
tPLH 11.738 2.249 + 0.190*CL 2.296 + 0.189*CL 2.338 + 0.188*CL
tPHL 9.753 1.902 + 0.157*CL 1.928 + 0.157*CL 1.948 + 0.156*CL
TN to PAD tR 22.250 1.485 + 0.415*CL 1.620 + 0.413*CL 1.725 + 0.411*CL
tF 16.992 1.367 + 0.312*CL 1.396 + 0.312*CL 1.402 + 0.312*CL
tPLH 12.250 2.758 + 0.190*CL 2.810 + 0.189*CL 2.846 + 0.188*CL
tPHL 10.142 2.337 + 0.156*CL 2.356 + 0.156*CL 2.377 + 0.155*CL
tPLZ 1.765 1.765 + 0.000*CL 1.765 + 0.000*CL 1.765 + 0.000*CL
tPHZ 7.277 7.291 + 0.000*CL 7.277 + 0.000*CL 7.272 + 0.000*CL
EN to PAD tR 22.250 1.485 + 0.415*CL 1.620 + 0.413*CL 1.725 + 0.411*CL
tF 16.992 1.367 + 0.312*CL 1.396 + 0.312*CL 1.402 + 0.312*CL
tPLH 12.430 2.941 + 0.190*CL 2.990 + 0.189*CL 3.029 + 0.188*CL
tPHL 10.322 2.520 + 0.156*CL 2.538 + 0.156*CL 2.556 + 0.155*CL
tPLZ 1.848 1.848 + 0.000*CL 1.848 + 0.000*CL 1.848 + 0.000*CL
tPHZ 7.359 7.373 + 0.000*CL 7.359 + 0.000*CL 7.354 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-57 STDM110
PvOTyz
Tri-State Output Buffers
Switching Characteristics(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 0.19ns, CL: Capacltive Load[pf])
PTOT3
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 14.950 1.003 + 0.279*CL 1.124 + 0.277*CL 1.223 + 0.275*CL
tF 11.398 0.929 + 0.209*CL 0.952 + 0.209*CL 0.976 + 0.209*CL
tPLH 8.375 2.018 + 0.127*CL 2.056 + 0.126*CL 2.093 + 0.126*CL
tPHL 7.074 1.817 + 0.105*CL 1.837 + 0.105*CL 1.854 + 0.105*CL
TN to PAD tR 14.950 1.005 + 0.279*CL 1.122 + 0.277*CL 1.227 + 0.275*CL
tF 11.350 0.906 + 0.209*CL 0.926 + 0.208*CL 0.947 + 0.208*CL
tPLH 8.886 2.529 + 0.127*CL 2.567 + 0.126*CL 2.605 + 0.126*CL
tPHL 7.460 2.242 + 0.104*CL 2.255 + 0.104*CL 2.274 + 0.104*CL
tPLZ 1.887 1.887 + 0.000*CL 1.887 + 0.000*CL 1.887 + 0.000*CL
tPHZ 9.372 9.409 + 0.000*CL 9.372 + 0.000*CL 9.357 + 0.000*CL
EN to PAD tR 14.950 1.005 + 0.279*CL 1.122 + 0.277*CL 1.227 + 0.275*CL
tF 11.350 0.906 + 0.209*CL 0.926 + 0.208*CL 0.947 + 0.208*CL
tPLH 9.067 2.711 + 0.127*CL 2.748 + 0.126*CL 2.785 + 0.126*CL
tPHL 7.640 2.425 + 0.104*CL 2.438 + 0.104*CL 2.453 + 0.104*CL
tPLZ 1.970 1.970 + 0.000*CL 1.970 + 0.000*CL 1.970 + 0.000*CL
tPHZ 9.455 9.492 + 0.000*CL 9.455 + 0.000*CL 9.439 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
SEC ASIC 4-58 STDM110
BI-DIRECTIONAL BUFFERS
Cell ListCell Name Function Description
PBaDyz 2.5V Interface Open-Drain Bi-Directional Buffers
PBaUDyz 2.5 V Interface Open-Drain Bi-Directional Buffers with Pull-Up
PHBaDyz 3.3V Interface Open-Drain Bi-Directional Buffers with Pull-Down
PHBaUDyz 3.3 V Interface Open-Drain Bi-Directional Buffers with Pull-Up
PTBaDyz 5V - Tolerant Open-Drain Bi-Directional Buffers
PTBaUDyz 5V - Tolerant Open-Drain Bi-Directional Buffers with Pull-Up
PBaTyz 2.5V Tri-State Bi-Directional Buffers
PBaDTyz 2.5V Tri-State Bi-Directional Buffers with Pull-Down
PBaUTyz 2.5V Tri-State Bi-Directional Buffers with Pull-Up
PHBaTyz 3.3V Interface Tri-State Bi-Directional Buffers
PHBaDTyz 3.3V Interface Tri-State Bi-Directional Buffers with Pull-Down
PHBaUTyz 3.3V Interface Tri-State Bi-Directional Buffers with Pull-Up
PTBaTyz 5V - Tolerant Tri-State Bi-Directional Buffers
PTBaDTyz 5V - Tolerant Tri-State Bi-Directional Buffers with Pull-Down
PTBaUTyz 5V - Tolerant Tri-State Bi-Directional Buffers with Pull-Up
Samsung ASIC 4-59 STDM110
Open Drain Bi-Directional Buffers
PvBaDyz
PvBaUDyz
Tri-State Bi-Directional Buffers
PvBaTyz
PvBaDTyz
PvBaUTyz
PAD
TN
EN
Y
PO PI
PAD
TN
EN
Y
PO PI
PAD
A
TN
EN
Y
PO PI
PAD
A
TN
EN
Y
PO PI
PAD
A
TN
EN
Y
PO PI
BI-DIRECTIONAL BUFFERS
STDM110 4-60 Samsung ASIC
OSCILLATORS
Cell List
NOTE: Use I/O 3.3V and Core 1.8V
NOTE: Use I/O 2.5V and Core 1.8V
NOTE: Use I/O 1.8V and Core 1.8V
Cell Name Function Description
PHSOSCK1 Oscillator Cell with Enable (~ 100kHz)
PHSOSCK2 Oscillator Cell with Enable (100K ~ 1MHz)
PHSOSCM1 Oscillator Cell with Enable (1M ~ 10MHz)
PHSOSCM2 Oscillator Cell with Enable (10M ~ 40MHz)
Cell Name Function Description
PH2SOSCK1 Oscillator Cell with Enable (~ 100kHz)
PH2SOSCK2 Oscillator Cell with Enable (100K ~ 1MHz)
PH2SOSCM1 Oscillator Cell with Enable (1M ~ 10MHz)
PH2SOSCM2 Oscillator Cell with Enable (10M ~ 40MHz)
Cell Name Function Description
PSOSCK1 Oscillator Cell with Enable (~ 100kHz)
PSOSCK2 Oscillator Cell with Enable (100K ~ 1MHz)
PSOSCM1 Oscillator Cell with Enable (1M ~ 10MHz)
PSOSCM2 Oscillator Cell with Enable (10M ~ 40MHz)
Samsung ASIC 4-61 STDM110
PHSOSCK1/K2/M1/M2/M3
Oscillator Cell with Enable
Logic Symbol
Truth Table
Cell Data
E PADA PADY YN PI PO
000001
000011
010001
010011
101101
101110
110001
110011
Input Load (SL) I/O Sizes
PHSOSCK1/K2 PHSOSCM1/M2 PHSOSCK1/K2 PHSOSCM1/M2
EE
3.42 3.42 2 I/O Slots 2 I/O Slots
E
PADA
PADY
YN
PO
PI
STDM110 4-62 Samsung ASIC
PHSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PHSOSCK1
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 2030.800 40.630 + 39.802*CL 40.630 + 39.802*CL 40.600 + 39.804*CL
tF 1973.660 39.470 + 38.682*CL 39.430 + 38.686*CL 39.460 + 38.684*CL
tPLH 908.930 18.920 + 17.800*CL 18.900 + 17.802*CL 18.930 + 17.800*CL
tPHL 957.530 20.040 + 18.750*CL 20.060 + 18.748*CL 20.030 + 18.750*CL
E to PADY tR 2030.800 40.630 + 39.802*CL 40.630 + 39.802*CL 40.600 + 39.804*CL
tF 1973.720 39.430 + 38.686*CL 39.450 + 38.684*CL 39.420 + 38.686*CL
tPLH 910.720 20.710 + 17.800*CL 20.690 + 17.802*CL 20.720 + 17.800*CL
tPHL 957.630 20.140 + 18.750*CL 20.160 + 18.748*CL 20.130 + 18.750*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.155 0.138 + 0.009*SL 0.139 + 0.008*SL 0.139 + 0.008*SL
tF 0.144 0.127 + 0.009*SL 0.127 + 0.009*SL 0.126 + 0.009*SL
tPLH 8.595 8.584 + 0.005*SL 8.588 + 0.004*SL 8.601 + 0.004*SL
tPHL 11.804 11.791 + 0.006*SL 11.795 + 0.005*SL 11.808 + 0.005*SL
E to YN tR 0.155 0.138 + 0.008*SL 0.139 + 0.008*SL 0.138 + 0.008*SL
tF 0.145 0.127 + 0.009*SL 0.128 + 0.009*SL 0.126 + 0.009*SL
tPLH 10.225 10.215 + 0.005*SL 10.217 + 0.004*SL 10.231 + 0.004*SL
tPHL 11.984 11.972 + 0.006*SL 11.975 + 0.005*SL 11.989 + 0.005*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-63 STDM110
PHSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PHSOSCK2
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 261.584 5.319 + 5.123*CL 5.343 + 5.120*CL 5.244 + 5.127*CL
tF 246.418 5.004 + 4.827*CL 4.994 + 4.828*CL 4.988 + 4.829*CL
tPLH 96.561 2.524 + 1.877*CL 2.470 + 1.883*CL 2.491 + 1.881*CL
tPHL 97.576 2.509 + 1.901*CL 2.497 + 1.902*CL 2.506 + 1.901*CL
E to PADY tR 261.436 5.303 + 5.124*CL 5.299 + 5.124*CL 5.326 + 5.122*CL
tF 246.420 4.998 + 4.827*CL 4.982 + 4.828*CL 4.970 + 4.829*CL
tPLH 98.346 4.216 + 1.883*CL 4.248 + 1.880*CL 4.206 + 1.883*CL
tPHL 97.764 2.695 + 1.898*CL 2.665 + 1.901*CL 2.644 + 1.902*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.169 0.148 + 0.010*SL 0.147 + 0.011*SL 0.146 + 0.011*SL
tF 0.159 0.136 + 0.011*SL 0.136 + 0.011*SL 0.135 + 0.011*SL
tPLH 3.028 3.015 + 0.007*SL 3.019 + 0.005*SL 3.031 + 0.005*SL
tPHL 2.897 2.882 + 0.007*SL 2.886 + 0.006*SL 2.898 + 0.006*SL
E to YN tR 0.169 0.147 + 0.011*SL 0.147 + 0.011*SL 0.147 + 0.011*SL
tF 0.159 0.136 + 0.011*SL 0.136 + 0.011*SL 0.135 + 0.011*SL
tPLH 4.742 4.729 + 0.007*SL 4.732 + 0.005*SL 4.744 + 0.005*SL
tPHL 2.946 2.931 + 0.007*SL 2.935 + 0.006*SL 2.947 + 0.006*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-64 Samsung ASIC
PHSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PHSOSCM1
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 16.255 0.429 + 0.345*CL 1.025 + 0.285*CL 0.607 + 0.313*CL
tF 17.466 0.730 + 0.315*CL 0.736 + 0.315*CL 0.312 + 0.343*CL
tPLH 8.464 1.015 + 0.149*CL 1.002 + 0.150*CL 1.015 + 0.149*CL
tPHL 9.530 1.023 + 0.171*CL 1.050 + 0.169*CL 1.029 + 0.170*CL
E to PADY tR 16.814 0.667 + 0.300*CL 0.288 + 0.338*CL 0.441 + 0.327*CL
tF 16.841 0.414 + 0.334*CL 0.399 + 0.335*CL 0.538 + 0.326*CL
tPLH 10.333 2.879 + 0.150*CL 2.890 + 0.149*CL 2.889 + 0.149*CL
tPHL 9.549 1.091 + 0.170*CL 1.095 + 0.170*CL 1.111 + 0.169*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.169 0.147 + 0.011*SL 0.148 + 0.011*SL 0.147 + 0.011*SL
tF 0.158 0.136 + 0.011*SL 0.135 + 0.011*SL 0.134 + 0.011*SL
tPLH 3.200 3.187 + 0.007*SL 3.191 + 0.005*SL 3.203 + 0.005*SL
tPHL 2.924 2.909 + 0.007*SL 2.912 + 0.006*SL 2.925 + 0.006*SL
E to YN tR 0.169 0.148 + 0.010*SL 0.147 + 0.011*SL 0.147 + 0.011*SL
tF 0.158 0.136 + 0.011*SL 0.135 + 0.011*SL 0.134 + 0.011*SL
tPLH 5.161 5.147 + 0.007*SL 5.151 + 0.005*SL 5.163 + 0.005*SL
tPHL 2.713 2.698 + 0.007*SL 2.702 + 0.006*SL 2.714 + 0.006*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-65 STDM110
PHSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PHSOSCM2
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 3.3V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 5.071 0.780 + 0.084*CL 0.813 + 0.080*CL 0.707 + 0.087*CL
tF 5.095 0.944 + 0.092*CL 0.984 + 0.088*CL 1.111 + 0.080*CL
tPLH 4.259 1.687 + 0.062*CL 1.771 + 0.053*CL 1.846 + 0.048*CL
tPHL 4.631 1.602 + 0.071*CL 1.677 + 0.063*CL 1.770 + 0.057*CL
E to PADY tR 5.149 0.808 + 0.082*CL 0.816 + 0.082*CL 0.709 + 0.089*CL
tF 4.426 0.568 + 0.077*CL 0.568 + 0.077*CL 0.574 + 0.077*CL
tPLH 6.269 3.696 + 0.062*CL 3.779 + 0.053*CL 3.856 + 0.048*CL
tPHL 4.124 1.679 + 0.057*CL 1.756 + 0.050*CL 1.804 + 0.046*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.169 0.147 + 0.011*SL 0.148 + 0.011*SL 0.147 + 0.011*SL
tF 0.158 0.136 + 0.011*SL 0.135 + 0.011*SL 0.134 + 0.011*SL
tPLH 3.200 3.187 + 0.007*SL 3.191 + 0.005*SL 3.203 + 0.005*SL
tPHL 2.924 2.909 + 0.007*SL 2.912 + 0.006*SL 2.925 + 0.006*SL
E to YN tR 0.169 0.148 + 0.010*SL 0.147 + 0.011*SL 0.147 + 0.011*SL
tF 0.158 0.136 + 0.011*SL 0.135 + 0.011*SL 0.134 + 0.011*SL
tPLH 5.161 5.147 + 0.007*SL 5.151 + 0.005*SL 5.163 + 0.005*SL
tPHL 2.713 2.698 + 0.007*SL 2.702 + 0.006*SL 2.714 + 0.006*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-66 Samsung ASIC
PH2SOSCK1/K2/M1/M2
Oscillator Cell with Enable
Logic Symbol
Truth Table
Cell Data
E PADA PADY YN PI PO
000001
000011
010001
010011
101101
101110
110001
110011
Input Load (SL) I/O Sizes
PH2SOSCK1/K2 PH2SOSCM1/M2 PH2SOSCK1/K2 PH2SOSCM1/M2
EE
3.75 3.75 2 I/O Slots 2 I/O Slots
E
PADA
PADY
YN
PO
PI
Samsung ASIC 4-67 STDM110
PH2SOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PH2SOSCK1
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 2129.550 82.270 + 40.944*CL 82.250 + 40.946*CL 82.250 + 40.946*CL
tF 1941.280 72.580 + 37.374*CL 72.580 + 37.374*CL 72.580 + 37.374*CL
tPLH 917.000 34.170 + 17.658*CL 34.170 + 17.658*CL 34.200 + 17.656*CL
tPHL 872.750 36.090 + 16.738*CL 36.150 + 16.732*CL 36.150 + 16.732*CL
E to PADY tR 2129.550 82.270 + 40.944*CL 82.250 + 40.946*CL 82.250 + 40.946*CL
tF 1941.340 72.430 + 37.378*CL 72.410 + 37.380*CL 72.440 + 37.378*CL
tPLH 917.290 34.460 + 17.658*CL 34.460 + 17.658*CL 34.490 + 17.656*CL
tPHL 872.430 35.810 + 16.734*CL 35.830 + 16.732*CL 35.830 + 16.732*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.821 0.792 + 0.015*SL 0.799 + 0.012*SL 0.909 + 0.010*SL
tF 1.649 1.602 + 0.024*SL 1.633 + 0.013*SL 1.748 + 0.010*SL
tPLH 52.693 52.664 + 0.015*SL 52.676 + 0.011*SL 52.793 + 0.008*SL
tPHL 73.145 73.104 + 0.021*SL 73.121 + 0.015*SL 73.289 + 0.011*SL
E to YN tR 0.802 0.766 + 0.018*SL 0.782 + 0.013*SL 0.887 + 0.010*SL
tF 1.656 1.627 + 0.014*SL 1.631 + 0.013*SL 1.769 + 0.010*SL
tPLH 52.669 52.640 + 0.015*SL 52.651 + 0.011*SL 52.773 + 0.007*SL
tPHL 72.118 72.077 + 0.021*SL 72.093 + 0.015*SL 72.262 + 0.011*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-68 Samsung ASIC
PH2SOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PH2SOSCK2
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 294.178 11.479 + 5.652*CL 11.469 + 5.653*CL 11.448 + 5.655*CL
tF 302.784 11.325 + 5.826*CL 11.285 + 5.830*CL 11.294 + 5.830*CL
tPLH 105.487 4.313 + 2.022*CL 4.303 + 2.023*CL 4.297 + 2.024*CL
tPHL 126.747 5.674 + 2.421*CL 5.670 + 2.421*CL 5.667 + 2.422*CL
E to PADY tR 294.168 11.446 + 5.654*CL 11.444 + 5.654*CL 11.438 + 5.655*CL
tF 302.728 11.247 + 5.833*CL 11.277 + 5.830*CL 11.298 + 5.829*CL
tPLH 105.772 4.596 + 2.023*CL 4.588 + 2.023*CL 4.582 + 2.024*CL
tPHL 126.716 5.630 + 2.421*CL 5.626 + 2.422*CL 5.626 + 2.422*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.271 0.248 + 0.011*SL 0.255 + 0.009*SL 0.266 + 0.009*SL
tF 0.415 0.397 + 0.009*SL 0.402 + 0.007*SL 0.448 + 0.006*SL
tPLH 6.287 6.271 + 0.008*SL 6.278 + 0.006*SL 6.322 + 0.005*SL
tPHL 7.058 7.039 + 0.010*SL 7.048 + 0.007*SL 7.127 + 0.005*SL
E to YN tR 0.271 0.247 + 0.012*SL 0.256 + 0.009*SL 0.267 + 0.009*SL
tF 0.415 0.397 + 0.009*SL 0.402 + 0.007*SL 0.448 + 0.006*SL
tPLH 6.207 6.191 + 0.008*SL 6.198 + 0.006*SL 6.242 + 0.005*SL
tPHL 6.903 6.883 + 0.010*SL 6.892 + 0.007*SL 6.972 + 0.005*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-69 STDM110
PH2SOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PH2SOSCM1
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 18.965 0.653 + 0.380*CL 1.486 + 0.297*CL 0.357 + 0.372*CL
tF 14.651 0.912 + 0.253*CL 0.677 + 0.277*CL 0.617 + 0.281*CL
tPLH 8.562 0.900 + 0.152*CL 0.870 + 0.155*CL 0.890 + 0.153*CL
tPHL 7.569 0.913 + 0.134*CL 0.914 + 0.134*CL 0.925 + 0.133*CL
E to PADY tR 18.205 0.580 + 0.377*CL 1.060 + 0.329*CL 0.765 + 0.349*CL
tF 13.750 0.587 + 0.282*CL 0.599 + 0.281*CL 0.979 + 0.255*CL
tPLH 8.786 1.149 + 0.155*CL 1.153 + 0.155*CL 1.194 + 0.152*CL
tPHL 7.838 1.115 + 0.135*CL 1.117 + 0.134*CL 1.117 + 0.134*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.165 0.145 + 0.010*SL 0.147 + 0.009*SL 0.152 + 0.009*SL
tF 0.199 0.183 + 0.008*SL 0.186 + 0.007*SL 0.197 + 0.007*SL
tPLH 0.928 0.916 + 0.006*SL 0.919 + 0.005*SL 0.935 + 0.004*SL
tPHL 1.225 1.212 + 0.006*SL 1.217 + 0.005*SL 1.253 + 0.004*SL
E to YN tR 0.161 0.141 + 0.010*SL 0.142 + 0.009*SL 0.148 + 0.009*SL
tF 0.197 0.182 + 0.008*SL 0.184 + 0.007*SL 0.195 + 0.007*SL
tPLH 1.222 1.211 + 0.006*SL 1.214 + 0.005*SL 1.229 + 0.004*SL
tPHL 1.429 1.417 + 0.006*SL 1.422 + 0.005*SL 1.457 + 0.004*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-70 Samsung ASIC
PH2SOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PH2SOSCM2
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, 2.5V, tR/tF = 1.600ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 4.532 0.619 + 0.085*CL 0.565 + 0.091*CL 0.810 + 0.074*CL
tF 3.992 0.731 + 0.067*CL 0.709 + 0.069*CL 0.785 + 0.064*CL
tPLH 3.175 1.053 + 0.048*CL 1.104 + 0.043*CL 1.139 + 0.041*CL
tPHL 3.065 0.923 + 0.051*CL 0.994 + 0.044*CL 1.049 + 0.040*CL
E to PADY tR 4.934 0.538 + 0.087*CL 0.679 + 0.073*CL 0.426 + 0.090*CL
tF 4.049 0.597 + 0.067*CL 0.608 + 0.066*CL 0.549 + 0.070*CL
tPLH 3.561 1.419 + 0.049*CL 1.471 + 0.043*CL 1.503 + 0.041*CL
tPHL 3.562 1.505 + 0.048*CL 1.562 + 0.042*CL 1.610 + 0.039*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.118 0.107 + 0.006*SL 0.108 + 0.005*SL 0.110 + 0.005*SL
tF 0.140 0.131 + 0.005*SL 0.133 + 0.004*SL 0.139 + 0.004*SL
tPLH 1.240 1.233 + 0.003*SL 1.235 + 0.003*SL 1.246 + 0.003*SL
tPHL 1.409 1.401 + 0.004*SL 1.404 + 0.003*SL 1.426 + 0.002*SL
E to YN tR 0.119 0.109 + 0.005*SL 0.107 + 0.005*SL 0.109 + 0.005*SL
tF 0.140 0.131 + 0.005*SL 0.132 + 0.004*SL 0.139 + 0.004*SL
tPLH 1.559 1.552 + 0.003*SL 1.554 + 0.003*SL 1.564 + 0.003*SL
tPHL 1.922 1.915 + 0.004*SL 1.917 + 0.003*SL 1.939 + 0.002*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-71 STDM110
PSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Logic Symbol
Truth Table
Cell Data
E PADA PADY YN PI PO
000001
000011
010001
010011
101101
101110
110001
110011
Input Load (SL) I/O Sizes
PSOSCK1/K2 PSOSCM1/M2 PSOSCK1/K2 PSOSCM1/M2
EE
3.38 3.38 2 I/O Slots 2 I/O Slots
E
PADA
PADY
YN
PO
PI
STDM110 4-72 Samsung ASIC
PSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PSOSCK1
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 1570.690 63.890 + 30.136*CL 63.890 + 30.136*CL 63.890 + 30.136*CL
tF 1267.650 50.060 + 24.352*CL 50.080 + 24.350*CL 50.050 + 24.352*CL
tPLH 671.780 26.396 + 12.907*CL 26.410 + 12.906*CL 26.380 + 12.908*CL
tPHL 589.710 25.374 + 11.289*CL 25.380 + 11.288*CL 25.410 + 11.286*CL
E to PADY tR 1570.690 63.890 + 30.136*CL 63.890 + 30.136*CL 63.890 + 30.136*CL
tF 1267.650 50.060 + 24.352*CL 50.080 + 24.350*CL 50.050 + 24.352*CL
tPLH 671.670 26.276 + 12.908*CL 26.300 + 12.906*CL 26.270 + 12.908*CL
tPHL 589.520 25.186 + 11.288*CL 25.190 + 11.288*CL 25.220 + 11.286*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.156 0.139 + 0.009*SL 0.141 + 0.008*SL 0.147 + 0.008*SL
tF 0.189 0.174 + 0.007*SL 0.176 + 0.007*SL 0.182 + 0.007*SL
tPLH 0.943 0.932 + 0.005*SL 0.935 + 0.004*SL 0.956 + 0.004*SL
tPHL 0.939 0.927 + 0.006*SL 0.932 + 0.004*SL 0.961 + 0.004*SL
E to YN tR 0.153 0.136 + 0.008*SL 0.138 + 0.008*SL 0.144 + 0.008*SL
tF 0.184 0.169 + 0.007*SL 0.171 + 0.007*SL 0.178 + 0.007*SL
tPLH 0.883 0.872 + 0.005*SL 0.875 + 0.004*SL 0.895 + 0.004*SL
tPHL 0.835 0.823 + 0.006*SL 0.827 + 0.004*SL 0.856 + 0.004*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-73 STDM110
PSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PSOSCK2
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 225.440 9.316 + 4.319*CL 9.214 + 4.329*CL 9.310 + 4.323*CL
tF 200.981 7.937 + 3.861*CL 7.929 + 3.862*CL 7.941 + 3.861*CL
tPLH 78.039 3.596 + 1.492*CL 3.618 + 1.489*CL 3.639 + 1.488*CL
tPHL 70.414 3.616 + 1.340*CL 3.654 + 1.337*CL 3.684 + 1.335*CL
E to PADY tR 225.561 9.265 + 4.326*CL 9.295 + 4.323*CL 9.241 + 4.326*CL
tF 200.984 7.953 + 3.860*CL 7.945 + 3.861*CL 7.954 + 3.861*CL
tPLH 77.976 3.538 + 1.489*CL 3.532 + 1.490*CL 3.556 + 1.488*CL
tPHL 70.237 3.463 + 1.335*CL 3.457 + 1.336*CL 3.457 + 1.336*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.155 0.138 + 0.008*SL 0.140 + 0.008*SL 0.147 + 0.008*SL
tF 0.188 0.174 + 0.007*SL 0.175 + 0.007*SL 0.181 + 0.007*SL
tPLH 1.024 1.013 + 0.005*SL 1.017 + 0.004*SL 1.037 + 0.004*SL
tPHL 1.008 0.996 + 0.006*SL 1.000 + 0.004*SL 1.030 + 0.004*SL
E to YN tR 0.153 0.137 + 0.008*SL 0.137 + 0.008*SL 0.145 + 0.008*SL
tF 0.184 0.169 + 0.008*SL 0.171 + 0.007*SL 0.178 + 0.007*SL
tPLH 0.959 0.948 + 0.005*SL 0.952 + 0.004*SL 0.972 + 0.004*SL
tPHL 0.890 0.879 + 0.006*SL 0.883 + 0.004*SL 0.912 + 0.004*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-74 Samsung ASIC
PSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PSOSCM1
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 13.460 0.744 + 0.254*CL 0.548 + 0.274*CL 0.877 + 0.252*CL
tF 13.448 0.660 + 0.255*CL 0.730 + 0.248*CL 0.596 + 0.257*CL
tPLH 6.813 0.909 + 0.117*CL 0.927 + 0.115*CL 0.877 + 0.119*CL
tPHL 7.308 1.014 + 0.124*CL 0.995 + 0.126*CL 0.993 + 0.126*CL
E to PADY tR 12.710 0.501 + 0.292*CL 0.951 + 0.247*CL 1.215 + 0.230*CL
tF 13.700 0.736 + 0.232*CL 0.458 + 0.260*CL 0.359 + 0.267*CL
tPLH 6.733 0.828 + 0.118*CL 0.844 + 0.116*CL 0.807 + 0.119*CL
tPHL 7.462 1.136 + 0.127*CL 1.138 + 0.127*CL 1.148 + 0.126*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.154 0.138 + 0.008*SL 0.139 + 0.008*SL 0.148 + 0.008*SL
tF 0.188 0.172 + 0.008*SL 0.176 + 0.007*SL 0.182 + 0.007*SL
tPLH 1.073 1.062 + 0.006*SL 1.066 + 0.004*SL 1.086 + 0.004*SL
tPHL 1.084 1.072 + 0.006*SL 1.077 + 0.004*SL 1.106 + 0.004*SL
E to YN tR 0.153 0.136 + 0.009*SL 0.138 + 0.008*SL 0.145 + 0.008*SL
tF 0.186 0.171 + 0.008*SL 0.173 + 0.007*SL 0.179 + 0.007*SL
tPLH 1.012 1.001 + 0.005*SL 1.005 + 0.004*SL 1.025 + 0.004*SL
tPHL 1.244 1.232 + 0.006*SL 1.237 + 0.004*SL 1.266 + 0.004*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
Samsung ASIC 4-75 STDM110
PSOSCK1/K2/M1/M2
Oscillator Cell with Enable
Switching Characteristics
PSOSCM2
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, CL: Capacitive Load)
(Typical process, 25°C, 1.8V, tR/tF = 1.60ns, SL: Standard Load)
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
PADY tR 4.014 0.589 + 0.066*CL 0.646 + 0.061*CL 0.500 + 0.070*CL
tF 3.578 0.703 + 0.064*CL 0.781 + 0.056*CL 0.790 + 0.056*CL
tPLH 2.865 1.083 + 0.042*CL 1.144 + 0.036*CL 1.183 + 0.034*CL
tPHL 3.158 1.148 + 0.048*CL 1.218 + 0.041*CL 1.272 + 0.038*CL
E to PADY tR 4.052 0.491 + 0.070*CL 0.574 + 0.062*CL 0.413 + 0.073*CL
tF 3.679 0.709 + 0.060*CL 0.719 + 0.059*CL 0.713 + 0.059*CL
tPLH 2.881 1.101 + 0.042*CL 1.151 + 0.036*CL 1.191 + 0.034*CL
tPHL 3.817 1.794 + 0.049*CL 1.865 + 0.042*CL 1.926 + 0.038*CL
*Group1 : CL < 10, *Group2 : 10 CL
< <
= = 15, *Group3 : 15 < CL
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PADA to
YN tR 0.121 0.109 + 0.006*SL 0.110 + 0.005*SL 0.114 + 0.005*SL
tF 0.148 0.138 + 0.005*SL 0.139 + 0.005*SL 0.138 + 0.005*SL
tPLH 1.407 1.400 + 0.004*SL 1.402 + 0.003*SL 1.415 + 0.003*SL
tPHL 1.470 1.463 + 0.004*SL 1.465 + 0.003*SL 1.483 + 0.002*SL
E to YN tR 0.121 0.110 + 0.005*SL 0.110 + 0.005*SL 0.113 + 0.005*SL
tF 0.149 0.140 + 0.004*SL 0.140 + 0.005*SL 0.140 + 0.005*SL
tPLH 1.367 1.359 + 0.004*SL 1.361 + 0.003*SL 1.374 + 0.003*SL
tPHL 2.094 2.087 + 0.004*SL 2.089 + 0.003*SL 2.107 + 0.002*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 39, *Group3 : 39 < SL
STDM110 4-76 Samsung ASIC
PCI BUFFERS
Overview
PCI buffers are designed for PCI local bus application which is intended for high-performance 32-bit or 64-bit
bus architecture.
Samsung supports PCI input, output and bi-directional buffers for 3.3V and 5V signaling environment.
Features
— 0.24µm, low-power, high performance CMOS Technology
— Input, output, and bi-directional PCI buffers
— PCI local bus specification rev2.2 compliant
— Operating at up to 66MHz, including 33MHz
— Electrically compliant interface in 3.3V and 5V bus environments
Description
These PCI buffers are designed for 3.3V and 5V environments. These buffers are compliant with the PCI
local bus specification rev2.2. The PCI buffers for 66MHz can be available in 33MHz interface, but require
more power pads due to their fast and noisy characteristics. The 5V tolerant PCI buffers can be used for
33MHz, 5V environment. These tolerant PCI buffers require 5V power for bulk of PMOS driver for 5V bus
environment or 3.3V power for 3.3V environment. The 5V tolerant PCI drivers support 5V environment while
EN5V is low. Although tolerant PCI buffers support 5V environment, they do not drive 5V.
NOTE: If you want to use PCI buffers, please contact SEC.
Cell List
NOTE1: 3.3V signaling conditions: EN5V=high, VIO=3.3V, 5V tolerant is not supported.
5V signaling conditions: EN5V=low, VIO=5V, and 5V tolerant is supported.
NOTE2: In 3.3V signaling, VIO is 3.3V, which is provided through the vdd5o_pci power cell.
In 5V signaling, VIO is 5V, which is provided through the vdd5o_pci power cell.
Cell Name Description Operating Frequency Operating
Voltage
PTBPCI bi-direction Up to 33MHz at 5V signaling(note1)
Up to 66MHz at 3.3V signaling 3.3V
PTOPCI driver Up to 33MHz at 5V signaling
Up to 66MHz at 3.3V signaling
PTIPCI receiver Up to 33MHz at 5V signaling
Up to 66MHz at 3.3V signaling
Power Cell Name Description
VDD1I_PCI 1.8V Power cell for internal core and PCI I/Os
VDD3OP_PCI 3.3V Power cell for PCI I/Os
VDD5O_PCI VIO(3.3V or 5V) Power cell for PCI I/Os(note2)
VSSI_PCI Gnd Power cell for internal core; not used for PCI I/Os
VSSOP_PCI Gnd Power cell for PCI I/Os
Samsung ASIC 4-77 STDM110
PCI BUFFERS
Option (note3)
NOTE3: Voltage detector circuit will automatically set the EN5V pin either high or low according to VIO voltage level.
Electrical Characteristics
DC Characteristics
AC Characteristics
Cell Name Description
vdet_m110pci 3.3V or 5V voltage detector
Symbol Parameter 3.3V Signaling 5V Signaling Unit
Condition Min Max Condition Min Max
VCC Supply Voltage 3.0 3.6 3.0 3.6 V
VIO Vdd5o Voltage VCC 4.75 5.25 V
Vih Input high voltage 0.47VCC VCC+0.5 1.9 VIO+0.5 V
Vil Input low voltage – 0.5 0.33VCC – 0.5 0.9 V
IiInput leakage
current 0 < VIN < VCC –10 10 0 < VIN < VIO –70 70 µA
Voh Output high voltage IOUT = –500 µA 0.9VCC –I
OUT = –2mA 2.4 – V
Vol Output low voltage IOUT = 1500 µA – 0.1VCC IOUT = 6mA – 0.55 V
Symbol Parameter 3.3V Signaling 5V Signaling Unit
Condition Min Max Condition Min Max
Ioh (AC) Switching
current high VOUT = 0.3VCC –12VCC VOUT = 1.4V –44
mA VOUT = 0.7VCC –32VCC VOUT = 2.4V – 2.33
VOUT = 0.9VCC –1.71VCC VOUT = 3.0V – 142
Iol (AC) Switching
current low VOUT = 0.6VCC 16VCC VOUT = 2.2V 95
mA VOUT = 0.1VCC 2.67VCC VOUT = 0.55V 23.9
VOUT = 0.18VCC 38VCC VOUT = 0.71V 206
Icl Low clamp
current – 3 < VIN ≤ –1 –25 + (VIN +1)/
0.015 – 5 < VIN ≤ –1 –25 + (VIN +
1) / 0.015 mA
Ich High clamp
current VCC+1≤VIN < VCC+4 25 + (VIN
–VCC–1) / 0.015 mA
TrOutput rise
time 0.3VCC to 0.6VCC 1.0 4.0 0.4V to 2.4V 1.0 5.0 V/ns
TfOutput fall
time 0.6VCC to 0.3VCC 1.0 4.0 2.4V to 0.4V 1.0 5.0 V/ns
STDM110 4-78 Samsung ASIC
PTIPCI
5V-tolerant PCI Input Buffers
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, SL: Standard Load)
PTIPCI
Truth Table Input Truth Table
PAD PI Y PO
1110
0x01
1011
PAD Y
PO
PI
Path Parameter Delay [ns]
SL = 2 Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.153 0.140 + 0.006*SL 0.140 + 0.007*SL 0.142 + 0.007*SL
tF 0.064 0.059 + 0.002*SL 0.060 + 0.002*SL 0.059 + 0.002*SL
tPLH 0.711 0.703 + 0.004*SL 0.705 + 0.003*SL 0.712 + 0.003*SL
tPHL 1.251 1.248 + 0.002*SL 1.249 + 0.001*SL 1.259 + 0.001*SL
*Group1 : SL < 4, *Group2 : 4 SL 60, *Group3 : 60 < SL
< <
= =
Samsung ASIC 4-79 STDM110
PTOPCI
5V-tolerant PCI Output Buffers
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, CL: Capacitive Load)
PTOPCI
PAD
A
TN
EN
EN5V
NOTE:
EN5V=Low: Enable the 5V signaling
EN5V=High: Enable the 3.3V signaling
Path Parameter Delay [ns]
CL = 50.0pF Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 1.292 0.299 + 0.020*CL 0.254 + 0.021*CL 0.215 + 0.022*CL
tF 1.752 0.841 + 0.018*CL 0.822 + 0.019*CL 0.801 + 0.019*CL
tPLH 3.036 1.768 + 0.025*CL 1.758 + 0.026*CL 1.750 + 0.026*CL
tPHL 2.895 2.045 + 0.017*CL 2.137 + 0.014*CL 2.201 + 0.013*CL
TN to PAD tR 1.313 0.244 + 0.021*CL 0.230 + 0.022*CL 0.209 + 0.022*CL
tF 1.895 0.609 + 0.026*CL 0.771 + 0.020*CL 0.814 + 0.019*CL
tPLH 3.498 2.137 + 0.027*CL 2.162 + 0.026*CL 2.171 + 0.026*CL
tPHL 3.175 2.018 + 0.023*CL 2.234 + 0.016*CL 2.355 + 0.014*CL
tPLZ 2.400 2.399 + 0.000*CL 2.400 + 0.000*CL 2.400 + 0.000*CL
tPHZ 3.361 3.358 + 0.000*CL 3.359 + 0.000*CL 3.360 + 0.000*CL
EN to PAD tR 1.313 0.244 + 0.021*CL 0.230 + 0.022*CL 0.209 + 0.022*CL
tF 1.895 0.610 + 0.026*CL 0.771 + 0.020*CL 0.814 + 0.019*CL
tPLH 3.681 2.321 + 0.027*CL 2.346 + 0.026*CL 2.355 + 0.026*CL
tPHL 3.358 2.201 + 0.023*CL 2.418 + 0.016*CL 2.539 + 0.014*CL
tPLZ 2.347 2.346 + 0.000*CL 2.346 + 0.000*CL 2.346 + 0.000*CL
tPHZ 3.308 3.305 + 0.000*CL 3.307 + 0.000*CL 3.307 + 0.000*CL
*Group1 : CL < 30, *Group2 : 30 CL 50, *Group3 : 50 < CL
< <
= =
Truth Table Output Truth Table
AENTNPAD
0010
1011
x 1 x Hi-Z
x x 0 HI-Z
STDM110 4-80 Samsung ASIC
PTBPCI
5V-Tolerant PCI Bidirectional Buffer
Logic Symbol
Option:
Logic Symbol
Cell Data Cell Name Detecting Voltage
vdet_m110pci 3.3V, 5V
Truth Table
Input Truth Table
Output Truth Table
PAD PI Y PO
1110
0x01
1011
AENTNPAD
0010
1011
x 1 x Hi-Z
x x 0 Hi-Z
PAD
A
TN
EN
Y
PO
PI
EN5V
NOTE:
EN5V=Low: Enable the 5V signaling
EN5V=High: Enable the 3.3V signaling
Y
PD
A
Truth TableInput Output
APDY
3.3V 1
5V 0
X 0 Last Y
X 1 Last Y
Samsung ASIC 4-81 STDM110
USB (Universal Serial Bus) I/O Buffers (Under Development)
Overview
USB I/O buffer consists of a differential input receiver, a differential output driver, two single-ended receivers,
and two pads. The differential input receiver has the 0.8V ~ 2.5V common mode input voltage range and
both of the two single-ended receivers have 0.8V and 2.0V as their low and high input threshold voltages,
VIL, VIH, respectively.
For low power consumption in a stand-by mode, the suspend pin (SUSPND) of the receiver and the driver
should be in the high state. The differential output drivers have a Low/Full speed control pin (SPEED) to
select the operation speed and have Output Enable Negative pin (OEN) to achieve a bi-directional half
duplex operation.
Features
— Complies with universal serial bus specification 1.0
— Supports 12Mbps “Full speed” and 1.5Mbps “Low speed” serial data transmission
— Supports both “Full speed” and “Low speed” Design Kits
— Supports both “Full speed only” and “Low speed only” cells to reduce silicon area
Electrical Specifications
DC Electrical Characteristics
Full Speed Output Buffer Electrical Characteristics
Parameter Symbol Condition (Notes 1, 2) Min Max Unit
Supply Current
Suspend Device ICCS 10 µA
Leakage Current
Hi-Z State Input Leakage ILO 0V < VIN < 3.3V –10 10 µA
Input Levels
Differential Input Sensitivity VDI I (D+) −(D-) I 0.2 V
Differential Common Mode Range VCM Includes VDI range 0.8 2.5
Single Ended Receiver Threshold VSE 0.8 2.0
Output Levels
Static Output Low VOL RL of 1.5KΩ to 3.6V 0.3 V
Static Output High VOH RL of 15KΩ to GND 2.8 3.6
Capacitance
Transceiver Capacitance CIN Pin to GND 20 pF
Parameter Symbol Condition (Notes 1, 2, 3) Min Max Unit
Driver Characteristics
Transition Time
Rise Time
Fall Time TR
TF
Notes 5 and Figure 1
CL = 50pF
CL = 50pF 4.0
4.0 20.0
20.0
ns
Rise/Fall Time Matching TRFM (TR/TF) 90 110 %
Output Signal Crossover Voltage VCRS 1.3 2.0 V
Drive Output Resistance ZDRV Steady state drive 28 43 Ω
STDM110 4-82 Samsung ASIC
USB (Universal Serial Bus) I/O Buffers (Under Development)
Low Speed Output Buffer Electrical Characteristics
NOTES:
1. All voltages are measured from the local ground potential, unless otherwise specified.
2. All timings use a capacitive load (CL) to ground of 50pF, unless otherwise specified.
3. Full speed timings have a 1.5KΩ pull-up to 2.8V on the DP data line.
4. Low speed timings have a 1.5KΩ pull-up to 2.8V on the DN data line.
5. Measured from 10% to 90% of the data signal.
FIGURE 1: Data Signal Rise and Fall Time
Cell List
Parameter Symbol Condition (Notes 1, 2, 4) Min Max Unit
Driver Characteristics
Transition Time
Rise Time
Fall Time
TR
TF
Notes 5 and Figure 1
CL = 50pF
CL = 350pF
CL = 50pF
CL = 350pF
75
75 300
300
ns
Rise/Fall Time Matching TRFM (TR/TF) 80 120 %
Output Signal Crossover Voltage VCRS 1.3 2.0 V
Cell Name Function Description
PBUSB/PBUSB1 Low/Full speed USB Buffer (1.5 MHz/12 MHz select)
PBUSB_LS Low speed only USB Buffer (1.5 MHz only, reduced cell size)
PBUSB_FS Full speed only USB Buffer (12 MHz only, reduced cell size)
CL
CL
Differential
Data Lines 10%
90% 90%
10%
Rise Time Fall Time
TRTF
Full Speed: 4 to 20ns at CL = 50pF Low Speed: 75ns at CL = 50pF, 300ns at CL = 350pF
Samsung ASIC 4-83 STDM110
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
PBUSB/PBUSB1
Symbol
Pin Connection
Cell Structure
PBUSB = PISER + PICDR + POTLS + POTFS
PBUSB1 = PISER + PICDR + POTLS + POTFS
There only exists PBUSB not PBUSB1 in the physical DB. The division of cell name (PBUSB/PBUSB1) is
caused to notify their different working-mode. PBUSB selects POTLS (SPEED=0) to work on the Low Speed
Mode. PBUSB1 selects POTFS (SPEED=1) to work on the Full Speed Mode.In case that the physical area
is critical, Low speed only (PBUSB_LS) or Full speed only (PBUSB_FS) USB IO cell would be provided at
the request of the customer, i.e.
PBUSB_LS = PISER + PICDR + POTLS
PBUSB_FS = PISER + PICDR + POTFS
Input Output Bi-Direction
TXDP
TXDN
SUSPND
OEN
SPEED
RXDP
RXDN
RXD
DP
DN
RXDP
RXDN
RXD
SPEED
PISER
PICDR
POTLS
POTFS
SUSPND
TXDP
OEN
TXDN
DP
DN
STDM110 4-84 Samsung ASIC
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
PBUSB_LS
Symbol
Pin Connection
Input Output Bi-Direction
TXDP
TXDN
SUSPND
OEN
SPEED
RXDP
RXDN
RXD
DP
DN
RXDP
RXDN
RXD
SPEED
PISER
PICDR
POTLS
SUSPND
TXDP
OEN
TXDN
DP
DN
Samsung ASIC 4-85 STDM110
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
PBUSB_FS
Symbol
Pin Connection
Input Output Bi-Direction
TXDP
TXDN
SUSPND
OEN
SPEED
RXDP
RXDN
RXD
DP
DN
RXDP
RXDN
RXD
SPEED
PISER
PICDR
POTFS
SUSPND
TXDP
OEN
TXDN
DP
DN
STDM110 4-86 Samsung ASIC
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS(Under Development)
Universal Serial Bus I/O Buffer
PISER
Single-Ended Receiver
Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, SL: Standard Load)
PISER
Pin Connection
Truth Table
Input Output
DP
DN RXDP
RXDN
DP DN RXDP RXDN
0000
0101
1010
1111
RXDP
RXDN
DP
DN
Path Parameter Delay [ns]
SL = 2 Delay Equations [ns]
Group1* Group2* Group3*
DP to
RXDP
tR 0.172 0.141 + 0.015*SL 0.140 + 0.016*SL 0.134 + 0.016*SL
tF 0.169 0.143 + 0.013*SL 0.145 + 0.012*SL 0.131 + 0.013*SL
tPLH 0.633 0.615 + 0.009*SL 0.618 + 0.008*SL 0.624 + 0.008*SL
tPHL 0.792 0.773 + 0.010*SL 0.782 + 0.007*SL 0.809 + 0.007*SL
DN to
RXDN
tR 0.172 0.141 + 0.015*SL 0.140 + 0.016*SL 0.134 + 0.016*SL
tF 0.169 0.143 + 0.013*SL 0.145 + 0.012*SL 0.131 + 0.013*SL
tPLH 0.633 0.615 + 0.009*SL 0.618 + 0.008*SL 0.624 + 0.008*SL
tPHL 0.792 0.773 + 0.010*SL 0.782 + 0.007*SL 0.809 + 0.007*SL
*Group1 : SL < 4, *Group2 : 4 SL 60, *Group3 : 60 < SL
< <
= =
Samsung ASIC 4-87 STDM110
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS(UnderDevelopment)
Universal Serial Bus I/O Buffer
PICDR
Differential Receiver
Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, SL: Standard Load)
PICDR
RXD
SUSPND
DP
DN
R F
Path Parameter Delay [ns]
SL = 2 Delay Equations [ns]
Group1* Group2* Group3*
DP to RXD tR 0.218 0.187 + 0.016*SL 0.189 + 0.015*SL 0.166 + 0.016*SL
tF 0.181 0.163 + 0.009*SL 0.178 + 0.005*SL 0.248 + 0.004*SL
tPLH 9.772 9.749 + 0.012*SL 9.761 + 0.009*SL 9.796 + 0.008*SL
tPHL 9.016 8.997 + 0.009*SL 9.018 + 0.005*SL 9.130 + 0.003*SL
DN to RXD tR 0.245 0.212 + 0.016*SL 0.217 + 0.015*SL 0.202 + 0.015*SL
tF 0.218 0.199 + 0.010*SL 0.217 + 0.006*SL 0.295 + 0.004*SL
tPLH 3.777 3.751 + 0.013*SL 3.768 + 0.009*SL 3.825 + 0.008*SL
tPHL 4.446 4.423 + 0.012*SL 4.450 + 0.006*SL 4.588 + 0.003*SL
SUSPND to RXD tR 0.213 0.182 + 0.015*SL 0.183 + 0.015*SL 0.161 + 0.016*SL
tF 0.216 0.195 + 0.011*SL 0.215 + 0.006*SL 0.316 + 0.005*SL
tPLH 2.752 2.730 + 0.011*SL 2.741 + 0.009*SL 2.774 + 0.008*SL
tPHL 2.069 2.045 + 0.012*SL 2.072 + 0.006*SL 2.215 + 0.003*SL
*Group1 : SL < 4, *Group2 : 4 SL 60, *Group3 : 60 < SL
< <
= =
Pin Connection
Truth Table
Input Output
DP
DN
SUSPND
RXD
DP DN SUSPND RXD
0000
0100
1001
110x
xx10
STDM110 4-88 Samsung ASIC
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
POTLS
Tri-State Output Buffer with Low Speed
Symbol
Truth Table
NOTE: SUSPND is the Suspend Mode control signal for the output driver. SUSPND=1 or OEN=1, both Low speed
driver and Full speed driver are suspended. SPEED is the Low/Full speed output mode selecting signal,
SPEED=0, SUSPND=0, OEN=0 Low speed mode transmitting.
TXDP TXDN SUSPND OEN SPEED DP DN
0000000
0100001
1000010
1100011
x x 1 x x Hi-Z Hi-Z
x x x 1 x Hi-Z Hi-Z
x x x x 1 Hi-Z Hi-Z
SPEED
SUSPND
TXDP
OEN
TXDN
DP
DN
Pin Connection
Input Output
TXDP
TXDN
SPEED
SUSPND
OEN
DP
DN
Samsung ASIC 4-89 STDM110
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, CL: Capacitive Load)
POTLS
Path Parameter Delay [ns]
CL = 50.0pF Delay Equations [ns]
Group1* Group2* Group3*
TXDP to DP tR 116.340 115.140 + 0.024*CL 120.900 + 0.000*CL 122.040 + 0.000*CL
tF 135.000 135.000 + 0.000*CL 122.170 + 0.052*CL 135.790 + 0.000*CL
tPLH 112.415 112.415 + 0.000*CL 105.700 + 0.077*CL 105.280 + 0.082*CL
tPHL 113.570 109.045 + 0.091*CL 119.710 + 0.000*CL 110.170 + 0.004*CL
OEN to DP tR 114.285 114.285 + 0.000*CL 113.270 + 0.009*CL 113.210 + 0.010*CL
tF 129.395 129.395 + 0.000*CL 131.320 + 0.000*CL 127.390 + 0.000*CL
tPLH 80.167 80.167 + 0.000*CL 78.709 + 0.028*CL 74.371 + 0.086*CL
tPHL 113.860 109.810 + 0.081*CL 111.820 + 0.041*CL 120.070 + 0.000*CL
tPLZ 2.882 2.882 + 0.000*CL 2.882 + 0.000*CL 2.882 + 0.000*CL
tPHZ 3.079 3.078 + 0.000*CL 3.078 + 0.000*CL 3.079 + 0.000*CL
SPEED to DP tR 114.300 114.300 + 0.000*CL 113.260 + 0.009*CL 113.170 + 0.010*CL
tF 6.166 3.979 + 0.044*CL 4.262 + 0.038*CL 4.527 + 0.035*CL
tPLH 80.053 80.053 + 0.000*CL 78.593 + 0.028*CL 74.267 + 0.085*CL
tPHL 12.606 9.994 + 0.052*CL 10.530 + 0.042*CL 11.007 + 0.035*CL
tPLZ 2.855 2.855 + 0.000*CL 2.855 + 0.000*CL 2.855 + 0.000*CL
tPHZ 2.126 2.126 + 0.000*CL 2.127 + 0.000*CL 2.126 + 0.000*CL
SUSPND to DP tR 114.230 114.230 + 0.000*CL 113.240 + 0.009*CL 113.150 + 0.010*CL
tF 129.395 129.395 + 0.000*CL 131.340 + 0.000*CL 127.350 + 0.000*CL
tPLH 79.712 79.712 + 0.000*CL 78.298 + 0.028*CL 73.945 + 0.086*CL
tPHL 113.520 109.445 + 0.081*CL 111.500 + 0.040*CL 119.750 + 0.000*CL
tPLZ 2.674 2.674 + 0.000*CL 2.674 + 0.000*CL 2.674 + 0.000*CL
tPHZ 2.880 2.879 + 0.000*CL 2.880 + 0.000*CL 2.880 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL 75, *Group3 : 75 < CL
< <
= =
STDM110 4-90 Samsung ASIC
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
POTFS
Tri-State Output Buffer with Full Speed
Symbol
Truth Table
NOTE: SUSPND is the Suspend Mode control signal for the output driver. SUSPND=1 or OEN=1, both Low speed
driver and Full speed driver are suspended. SPEED is the Low/Full speed output mode selecting signal,
SPEED=1, SUSPND=0, OEN=0 Low speed mode transmitting.
TXDP TXDN SUSPND OEN SPEED DP DN
0000100
0100101
1000110
1100111
x x 1 x x Hi-z Hi-z
x x x 1 x Hi-z Hi-z
x x x x 0 Hi-z Hi-z
SPEED
SUSPND
TXDP
OEN
TXDN
DP
DN
Pin Connection
Input Output
TXDP
TXDN
SPEED
SUSPND
OEN
DP
DN
Samsung ASIC 4-91 STDM110
PBUSB/PBUSB1/PBUSB_LS/PBUSB_FS (Under Development)
Universal Serial Bus I/O Buffer
Switching Characteristics (Typical process, 25°C, 1.8V, tR/tF = 0.80ns, CL: Capacitive Load)
POTFS
Path Parameter Delay [ns]
CL = 50.0pF Delay Equations [ns]
Group1* Group2* Group3*
TXDP to DP tR 5.661 3.572 + 0.042*CL 3.880 + 0.036*CL 4.155 + 0.032*CL
tF 5.904 3.666 + 0.045*CL 3.981 + 0.038*CL 4.273 + 0.035*CL
tPLH 12.411 9.973 + 0.049*CL 10.513 + 0.038*CL 10.990 + 0.032*CL
tPHL 12.992 10.335 + 0.053*CL 10.896 + 0.042*CL 11.391 + 0.035*CL
OEN to DP tR 5.889 3.845 + 0.041*CL 4.118 + 0.035*CL 4.370 + 0.032*CL
tF 6.166 3.980 + 0.044*CL 4.262 + 0.038*CL 4.527 + 0.035*CL
tPLH 13.226 10.829 + 0.048*CL 11.344 + 0.038*CL 11.812 + 0.031*CL
tPHL 12.972 10.367 + 0.052*CL 10.896 + 0.042*CL 11.376 + 0.035*CL
tPLZ 1.778 1.778 + 0.000*CL 1.778 + 0.000*CL 1.778 + 0.000*CL
tPHZ 2.322 2.322 + 0.000*CL 2.322 + 0.000*CL 2.322 + 0.000*CL
SPEED to DP tR 5.889 3.844 + 0.041*CL 4.117 + 0.035*CL 4.370 + 0.032*CL
tF 6.166 3.977 + 0.044*CL 4.261 + 0.038*CL 4.527 + 0.035*CL
tPLH 12.625 10.225 + 0.048*CL 10.745 + 0.038*CL 11.210 + 0.031*CL
tPHL 12.370 9.770 + 0.052*CL 10.292 + 0.042*CL 10.778 + 0.035*CL
tPLZ 2.165 2.165 + 0.000*CL 2.165 + 0.000*CL 2.165 + 0.000*CL
tPHZ 2.710 2.710 + 0.000*CL 2.710 + 0.000*CL 2.710 + 0.000*CL
SUSPND to DP tR 5.889 3.845 + 0.041*CL 4.118 + 0.035*CL 4.370 + 0.032*CL
tF 129.370 129.370 + 0.000*CL 131.320 + 0.000*CL 127.390 + 0.000*CL
tPLH 12.860 10.460 + 0.048*CL 10.978 + 0.038*CL 11.446 + 0.031*CL
tPHL 113.730 109.705 + 0.081*CL 111.670 + 0.041*CL 119.980 + 0.000*CL
tPLZ 1.581 1.581 + 0.000*CL 1.581 + 0.000*CL 1.581 + 0.000*CL
tPHZ 3.049 3.049 + 0.000*CL 3.049 + 0.000*CL 3.049 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL 75, *Group3 : 75 < CL
< <
= =
STDM110 4-92 Samsung ASIC
POWER PADS
Cell List
Cell Name Function Description
VDD Power Pads VSS Power Pads
VDD2I VSS2I 2.5V Internal
VDD2P VSS2P 2.5V Pre-Driver
VDD2O VSS2O 2.5V Output-Driver
VDD2IP VSS2IP 2.5V Internal and Pre-Driver
VDD2OP VSS2OP 2.5V Output-Driver and Pre-Driver
VDD2T VSS2T 2.5V Total
VDD3P VSS3P 3.3V Pre-Driver
VDD3O VSS3O 3.3V Output-Driver
VDD3OP VSS3OP 3.3V Output-Driver and Pre-Driver
Logic Symbol
Cell Name Function Description
VDD Power Pads VSS Power Pads
VDD2I_ABB VSS2I_ABB 2.5V Internal with Separate Bulk Bias
VDD2OP_ABB VSS2OP_ABB 2.5V Pre-Driver and Output-Driver with Separate
Bulk Bias
VDD2T_ABB VSS2T_ABB 2.5V Total with Separate Bulk Bias
VBB_ABB Bulk Bias Power Pad
VSSBB_ABB Bulk Bias and VSS Power Pad
Logic Symbol
Samsung ASIC 4-93 STDM110
ANALOGINTERFACE
Analog Input
Analog Output
Cell Name Function Description
PIC_ABB Analog CMOS Level Input Buffer Separate Bulk-Bias
PICC_ABB Analog CMOS Level Input Buffer Separate Bulk-Bias and without Nand-Tree
PICEN_ABB Analog CMOS Level Input Buffer with Enable Port and Separate Bulk-Bias
Cell Name Function Description
POT1_ABB Analog Tri-State Output Buffer with Separate Bulk Bias, 1mA Drive
POT2_ABB Analog Tri-State Output Buffer with Separate Bulk Bias, 2mA Drive
POT4_ABB Analog Tri-State Output Buffer with Separate Bulk Bias, 4mA Drive
POT8_ABB Analog Tri-State Output Buffer with Separate Bulk Bias, 8mA Drive
STDM110 4-94 Samsung ASIC
PIC_ABB
Analog CMOS Level Input Buffers with Separate Bulk-Bias
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 3.00ns, SL: Standard Load)
PIC_ABB
Truth Table
Standard Load (SL)
PAD PI Y PO
1110
0x01
1011
Cell Name PI
PIC_ABB 3.620
Y
PO
PI
PAD
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.196 0.180 + 0.008*SL 0.179 + 0.008*SL 0.159 + 0.008*SL
tF 0.210 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.421 1.410 + 0.005*SL 1.413 + 0.004*SL 1.430 + 0.004*SL
tPHL 1.826 1.814 + 0.006*SL 1.821 + 0.004*SL 1.896 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Samsung ASIC 4-95 STDM110
PICC_ABB
Analog CMOS Level Input Buffers with Separate Bulk-Bias
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 3.00ns, SL: Standard Load)
PICC_ABB
Truth Table
PAD Y
00
11
Y
PAD
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.175 0.160 + 0.007*SL 0.158 + 0.008*SL 0.128 + 0.008*SL
tF 0.189 0.175 + 0.007*SL 0.178 + 0.006*SL 0.143 + 0.006*SL
tPLH 1.405 1.394 + 0.006*SL 1.398 + 0.004*SL 1.416 + 0.004*SL
tPHL 1.810 1.798 + 0.006*SL 1.806 + 0.004*SL 1.887 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
STDM110 4-96 Samsung ASIC
PICEN_ABB
Analog CMOS Level Input Buffers with Enable Port and Separate Bulk-Bias
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 3.00ns, SL: Standard Load)
PICEN_ABB
Truth Table
Standard Load (SL)
PAD PI EN Y PO
11110
0x101
10111
xx001
Cell Name PI EN
PICEN_ABB 2.897 2.897
Y
PO
PI
PAD
EN
Path Parameter Delay [ns]
SL = 2
Delay Equations [ns]
Group1* Group2* Group3*
PAD to Y tR 0.197 0.181 + 0.008*SL 0.180 + 0.008*SL 0.159 + 0.008*SL
tF 0.211 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 1.556 1.545 + 0.005*SL 1.549 + 0.004*SL 1.565 + 0.004*SL
tPHL 2.044 2.032 + 0.006*SL 2.039 + 0.004*SL 2.114 + 0.003*SL
EN to Y tR 0.196 0.181 + 0.008*SL 0.179 + 0.008*SL 0.159 + 0.008*SL
tF 0.211 0.197 + 0.007*SL 0.199 + 0.006*SL 0.166 + 0.006*SL
tPLH 0.792 0.781 + 0.005*SL 0.784 + 0.004*SL 0.801 + 0.004*SL
tPHL 1.091 1.079 + 0.006*SL 1.086 + 0.004*SL 1.161 + 0.003*SL
*Group1 : SL < 3, *Group2 : 3 SL
< <
= = 300, *Group3 : 300 < SL
Samsung ASIC 4-97 STDM110
POT1/2/4/8_ABB
Analog Tri-state Output Buffers with Enable Port and Separate Bulk-Bias
Logic Symbol
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacitive Load)
POT1_ABB
Truth Table
Standard Load (SL)
TN EN A PAD
100 0
101 1
x 1 x Hi - z
0 x x Hi - z
Cell Name TN EN A
POT1_ABB 2.898 2.916 3.023
POT2_ABB 2.898 2.916 3.023
POT4_ABB 2.898 2.916 3.023
POT8_ABB 2.898 2.916 3.023
EN
PAD
A
TN
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 32.056 1.759 + 0.606*CL 1.758 + 0.606*CL 1.761 + 0.606*CL
tF 33.870 1.873 + 0.640*CL 1.872 + 0.640*CL 1.872 + 0.640*CL
tPLH 16.688 2.181 + 0.290*CL 2.180 + 0.290*CL 2.183 + 0.290*CL
tPHL 18.467 2.357 + 0.322*CL 2.359 + 0.322*CL 2.359 + 0.322*CL
TN to PAD tR 32.056 1.759 + 0.606*CL 1.758 + 0.606*CL 1.761 + 0.606*CL
tF 33.870 1.873 + 0.640*CL 1.872 + 0.640*CL 1.872 + 0.640*CL
tPLH 16.973 2.463 + 0.290*CL 2.465 + 0.290*CL 2.465 + 0.290*CL
tPHL 18.871 2.761 + 0.322*CL 2.761 + 0.322*CL 2.764 + 0.322*CL
tPLZ 1.841 1.841 + 0.000*CL 1.841 + 0.000*CL 1.841 + 0.000*CL
tPHZ 1.584 1.584 + 0.000*CL 1.584 + 0.000*CL 1.584 + 0.000*CL
EN to PAD tR 32.056 1.759 + 0.606*CL 1.758 + 0.606*CL 1.761 + 0.606*CL
tF 33.870 1.873 + 0.640*CL 1.872 + 0.640*CL 1.872 + 0.640*CL
tPLH 17.153 2.646 + 0.290*CL 2.645 + 0.290*CL 2.648 + 0.290*CL
tPHL 19.051 2.944 + 0.322*CL 2.941 + 0.322*CL 2.944 + 0.322*CL
tPLZ 1.923 1.923 + 0.000*CL 1.923 + 0.000*CL 1.923 + 0.000*CL
tPHZ 1.667 1.667 + 0.000*CL 1.667 + 0.000*CL 1.667 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-98 Samsung ASIC
POT1/2/4/8_ABB
Analog Tri-state Output Buffers with Enable Port and Separate Bulk-Bias
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacitive Load)
POT2_ABB
POT4_ABB
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 16.047 0.897 + 0.303*CL 0.899 + 0.303*CL 0.899 + 0.303*CL
tF 18.535 1.010 + 0.350*CL 1.011 + 0.350*CL 1.011 + 0.350*CL
tPLH 9.104 1.850 + 0.145*CL 1.851 + 0.145*CL 1.849 + 0.145*CL
tPHL 10.982 1.862 + 0.182*CL 1.864 + 0.182*CL 1.864 + 0.182*CL
TN to PAD tR 16.047 0.897 + 0.303*CL 0.899 + 0.303*CL 0.899 + 0.303*CL
tF 18.535 1.010 + 0.350*CL 1.011 + 0.350*CL 1.011 + 0.350*CL
tPLH 9.388 2.132 + 0.145*CL 2.135 + 0.145*CL 2.131 + 0.145*CL
tPHL 11.386 2.265 + 0.182*CL 2.266 + 0.182*CL 2.266 + 0.182*CL
tPLZ 1.690 1.690 + 0.000*CL 1.690 + 0.000*CL 1.690 + 0.000*CL
tPHZ 1.690 1.690 + 0.000*CL 1.690 + 0.000*CL 1.690 + 0.000*CL
EN to PAD tR 16.047 0.897 + 0.303*CL 0.899 + 0.303*CL 0.899 + 0.303*CL
tF 18.535 1.010 + 0.350*CL 1.011 + 0.350*CL 1.011 + 0.350*CL
tPLH 9.569 2.315 + 0.145*CL 2.316 + 0.145*CL 2.314 + 0.145*CL
tPHL 11.566 2.448 + 0.182*CL 2.446 + 0.182*CL 2.449 + 0.182*CL
tPLZ 1.772 1.772 + 0.000*CL 1.772 + 0.000*CL 1.772 + 0.000*CL
tPHZ 1.773 1.773 + 0.000*CL 1.773 + 0.000*CL 1.773 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 8.054 0.484 + 0.151*CL 0.480 + 0.151*CL 0.480 + 0.151*CL
tF 9.284 0.522 + 0.175*CL 0.521 + 0.175*CL 0.522 + 0.175*CL
tPLH 5.467 1.840 + 0.073*CL 1.840 + 0.073*CL 1.840 + 0.073*CL
tPHL 6.235 1.676 + 0.091*CL 1.676 + 0.091*CL 1.677 + 0.091*CL
TN to PAD tR 8.054 0.484 + 0.151*CL 0.480 + 0.151*CL 0.480 + 0.151*CL
tF 9.284 0.522 + 0.175*CL 0.521 + 0.175*CL 0.522 + 0.175*CL
tPLH 5.752 2.122 + 0.073*CL 2.124 + 0.073*CL 2.124 + 0.073*CL
tPHL 6.638 2.076 + 0.091*CL 2.078 + 0.091*CL 2.078 + 0.091*CL
tPLZ 1.822 1.822 + 0.000*CL 1.822 + 0.000*CL 1.822 + 0.000*CL
tPHZ 1.901 1.901 + 0.000*CL 1.901 + 0.000*CL 1.901 + 0.000*CL
EN to PAD tR 8.054 0.484 + 0.151*CL 0.480 + 0.151*CL 0.480 + 0.151*CL
tF 9.284 0.522 + 0.175*CL 0.521 + 0.175*CL 0.522 + 0.175*CL
tPLH 5.932 2.305 + 0.073*CL 2.305 + 0.073*CL 2.305 + 0.073*CL
tPHL 6.819 2.258 + 0.091*CL 2.259 + 0.091*CL 2.260 + 0.091*CL
tPLZ 1.905 1.905 + 0.000*CL 1.905 + 0.000*CL 1.905 + 0.000*CL
tPHZ 1.983 1.983 + 0.000*CL 1.983 + 0.000*CL 1.983 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
Samsung ASIC 4-99 STDM110
POT1/2/4/8_ABB
Analog Tri-state Output Buffers with Enable Port and Separate Bulk-Bias
Switching Characteristics (Typical process, 25°C, 1.8V, 2.5V, tR/tF = 0.19ns, CL: Capacitive Load)
POT8_ABB
Path Parameter Delay [ns]
CL = 50.0pF
Delay Equations [ns]
Group1* Group2* Group3*
A to PAD tR 4.117 0.414 + 0.074*CL 0.368 + 0.075*CL 0.336 + 0.075*CL
tF 4.673 0.309 + 0.087*CL 0.297 + 0.088*CL 0.291 + 0.088*CL
tPLH 3.928 2.109 + 0.036*CL 2.113 + 0.036*CL 2.114 + 0.036*CL
tPHL 3.981 1.712 + 0.045*CL 1.706 + 0.045*CL 1.703 + 0.046*CL
TN to PAD tR 4.117 0.414 + 0.074*CL 0.368 + 0.075*CL 0.336 + 0.075*CL
tF 4.672 0.307 + 0.087*CL 0.295 + 0.088*CL 0.290 + 0.088*CL
tPLH 4.213 2.392 + 0.036*CL 2.397 + 0.036*CL 2.398 + 0.036*CL
tPHL 4.373 2.088 + 0.046*CL 2.091 + 0.046*CL 2.093 + 0.046*CL
tPLZ 2.078 2.078 + 0.000*CL 2.078 + 0.000*CL 2.078 + 0.000*CL
tPHZ 2.320 2.320 + 0.000*CL 2.319 + 0.000*CL 2.320 + 0.000*CL
EN to PAD tR 4.117 0.414 + 0.074*CL 0.368 + 0.075*CL 0.336 + 0.075*CL
tF 4.672 0.307 + 0.087*CL 0.295 + 0.088*CL 0.290 + 0.088*CL
tPLH 4.393 2.575 + 0.036*CL 2.579 + 0.036*CL 2.579 + 0.036*CL
tPHL 4.553 2.271 + 0.046*CL 2.272 + 0.046*CL 2.273 + 0.046*CL
tPLZ 2.160 2.160 + 0.000*CL 2.160 + 0.000*CL 2.160 + 0.000*CL
tPHZ 2.402 2.402 + 0.000*CL 2.402 + 0.000*CL 2.402 + 0.000*CL
*Group1 : CL < 50, *Group2 : 50 CL
< <
= = 75, *Group3 : 75 < CL
STDM110 4-100 Samsung ASIC
ESD Slot Cells
Cell List
NOTE: All of Slot Cells have no Pad and can be added automatically by using Samsung utility CubicPlan.
Cell Name Function Description
EV1I 1.8V Internal ESD Protection
EV2P 2.5V Pre-Driver ESD Protection
EV2O 2.5V Output-Driver ESD Protection
EV2OP 2.5V Output-Driver and Pre-Driver ESD Protection
EV3P 3.3V Pre-Driver ESD Protection
EV3O 3.3V Output-Driver ESD Protection
EV3OP 3.3V Output-Driver and Pre-Driver ESD Protection
EV1I_ABB 1.8V Internal ESD Protection with Separated Bulk-Bias
EV2OP_ABB 2.5V Output-Driver and Pre-Driver ESD Protection with Separated Bulk-Bias
Samsung ASIC 4-101 STDM110
Common Slot Cells
Cell List
NOTES:
1. If CDL ring connected with bi-directional diode, ESD protection level can be dropped.
2. If analog blocks have only one VBB power pad, metal connected VBB ring type should be used.
3. All of Slot Cells can be added automatically by using Samsung utility CubicPlan, or by Manual.
Cell Name Function Description
EC0C0 Metal Ring Separator between Different Digital Blocks
EC0C0D(note 1) Metal Ring Separator between Different Digital Blocks for Noise Critical Design
EC0CA0 Metal Ring Separator between Digital to Analog
EC0CA0D(note 1) Metal Ring Separator between Digital to Analog for Noise Critical Design
EC0C0_BB Metal Ring Separator between Different Analog Blocks with VBB Ring Separated
EC0C0D_BB
(note 1) Metal Ring Separator between Different Analog Blocks for Noise Critical Design
with VBB Ring Separated
EC0C0_VBB
(note 2) Metal Ring Separator between Different Analog Blocks with VBB Ring Connected
EC0C0D_VBB
(note 1, 2) Metal Ring Separator between Different Analog Blocks for Noise Critical Design
with VBB Ring Connected
5
Compiled Memory
Contents
Overview ..............................................................................................................................5-1
Compiled Memory Naming Convention................................................................................5-1
Characteristics for Timing and Power...................................................................................5-2
Built-In Self Test and Built-In Redundancy-Analysis ............................................................5-4
Compiled Memory Selection Guide......................................................................................5-5
Low-Power Compiled Memory
SPSRAM_LP Low-Power Single-Port Synchronous SRAM..............................................5-6
DPSRAM_LP Low-Power Dual-Port Synchronous SRAM ................................................5-16
SPARAM_LP Low-Power Single-Port Asynchronous SRAM............................................5-26
DROM Low-Power Synchronous Diffusion Programmable ROM...........................5-36
MROM Low-Power Synchronous Metal Programmable ROM ................................5-44
Overview to Compiled Datapath...........................................................................................5-52
Compiled Macrocell Selection Guide ...................................................................................5-53
ADDER Adder/Subtracter ........................................................................................5-54
BS Barrel Shifter...............................................................................................5-65
MPY Modified Booth Multiplier............................................................................5-77
COMPILED MACROCELLS Overview
Samsung ASIC 5-2 STDM110
OVERVIEW
OVERVIEW TO COMPILED MEMORY
This section contains the overview of STDM110 compiled memory. In STDM110 compiled memory, we
provide application-specific memory solution - high-density and low-power application. That is, two different
library set of compiled memory are available in STDM110 cell library. One is the high-density compiled
memory, called STDM110-HD compiled memory and the other is the low-power compiled memory, called
STDM110-LP compiled memory. The high-density compiled memories are suitable for high integration
application with high-performance whereas the low-power compiled memories are suitable for portable
applications. These are complete memories that are customized to satisfy the requirements of the circuit at
hand. Depending on the function to be generated, the final memory will be implemented as a stand-alone,
pitch-matched and customized leafcells. In addition, to implement optimized memory, we apply the
state-of-the-art design architecture techniques. In STDM110 cell library, the compiled memory is fully
generated by a user-configurable compiler, called memory compiler. It allows you to configure a memory
through memory-related specification such as word depth, bit per word, column mux type and so on. The
compiler allows you to select and customize any of memory to satisfy the specific circuit requirements.
When the required specifications have been fully given, you may get any or all of the following items:
— Area-optimized and speed-optimized layout blocks
— Schematic netlist for simulation and verification
— Phantom cell to use in chip-level layout
— Tabular model for timing and power characteristics
— Automatic datasheet for a specific instance
For more detailed information regarding to memory compiler, contact your local representative or
headquarters.
COMPILED MEMORY NAMING CONVENTION
The naming convention of compiled memory in this section will be shown as Figure 5-1. The memory name
consists of the following convention.
Figure 5-1. Compiled Memory Naming Convention
The first string, ‘memory_code’, means the name of memory type. In STDM110 compiled memory, the
available memory types are as follows:
[memory_code]_[appl_code]_[opt_code]_[config_code]
COMPILED MACROCELLS Characteristics for Timing and Power
Samsung ASIC 5-3 STDM110
The second string, ‘appl_code’, means the specific application to suitably support the compiled memory and
the application code is one of HD (High-Density), LP (Low-Power) and HS (High-Speed). In STDM110
compiled memory, the high-speed compiled memory is not supported as another library set. Instead, the
high-density compiled memory can be applied for the high-performance application.
The third string, ‘opt_code’, represents the number of read and write ports for multi-port memory and the
option code is composed of the following convention:
opt_code = <n>r<m>w
Currently this field is only used for ARFRAM, where n is the total number of read ports (1~2) and m is the
total number of write ports (1~2). The last string, ‘config_code’, represents the configuration of the memory
to be specified. This configuration code is composed of the following convention:
<WORD> x <BPW> m <YMUX> b <BANK>
Here, WORD is the word depth, BPW is bit per word, YMUX is the available column mux type and BANK is
the number of bank to be used. For example, ‘spsram_hd_1024x32m16b2’ refers to a High-Density
single-port synchronous SRAM with 1024 words, 32 bits, 16 column mux and 2 bank. Second,
‘arfram_hd_1r2w_32x32m2’ refers to a High-Density three-port (1 read/2 write) asynchronous register file
with 32 word, 32 bits and 2 column mux and ‘spsram_lp_1024x32m16b2’ refers to a Low-Power single-port
synchronous SRAM with 1024 words, 32 bits, 16 column mux and 2 bank.
CHARACTERISTICS FOR TIMING AND POWER
STDM110-HD compiled memory is only supported at 2.5V supply voltage whereas STDM110-LP compiled
memory is supported at both 2.5V supply voltage and 1.8V supply voltage. Compiled memory in this section
has been characterized using typical-case at 25 degree and 2.5V supply. The values of worst-case or
best-case can be derived by using derating factors provided in Chapter 1.
For the timing characteristics, 2-dimensional table look-up model has been adopted to yield more accuracy.
Based on the combination of input slopes and output loads, the propagation delay is measured from the
input crossing 50% VDD to the output crossing 50% VDD. The timing values reported in the tables are also
taken from the same voltage level as the switching characteristics with 0.2ns for input slope and
10SL(Standard Load) for output load.
For the power characteristics, the average power consumption is measured on the condition that input slope
is 0.2ns and output load is 10SL. Also, the power consumption depends on input switching activity. The
power values reported in the tables are also taken from 50% input switching activity. For compiled memory
macrocells, average read power consumption, average write power consumption and average standby
power consumption are available, except that the standby power consumption is not available in ARFRAM
and FIFO. Average standby power consumption is measured on the condition that CSN (Chip Select
Negative) is in disable mode and other signals are in normal operation mode. If any of signals are activated
while in standby mode, the power will be consumed because the input switching activities are occurred by
the signal transition. Therefore, to reduce unnecessary power consumption, you should keep stable for all
signals while disabling CSN signal, if possible. In dual-port memory, the average power consumption is
measured on the condition that only one port is in active mode and the other port is isolated.
COMPILED MACROCELLS Built-In Self Test and Built-in redundancy-analysis
Samsung ASIC 5-4 STDM110
BUILT-IN SELF TEST AND BUILT-IN REDUNDANCY-ANALYSIS
SEC provides engineering design services to support Built-In Self-Test (BIST) for the compiled memory
macrocell. BIST circuits are designed to detect a set of fault types, such as stuck-at faults, transition faults,
coupling faults and address decoder faults that adversely impact the functionality of the memory block. As
shown in Figure 5-2, SEC adopts BIST architecture which is called SOA (Single Ordered Addressing)
algorithm.
Figure 5-2. Memory BIST Architecture
From Figure 5-2, although several memory macrocells of the same types or the different types exist together
in a circuit, SEC supports it as single BIST architecture. For more detailed information regarding to the BIST
for compiled memory macrocells, please contact your local representative or headquarters.
RAM0
RAMm
RAMs
BIST Logic
TEST Enable
Control Signal
CLK
BIST_MODE
.
.
.
DIAG
ERRORB
DONE
RAM1
Selection Guide for Compiled Memory COMPILED MACROCELLS
STDM110 5-5 Samsung ASIC
SELECTION GUIDE FOR COMPILED MEMORY
Low-Power Compiled Memory
Application Memory Type Description
Low-Power SPSRAM_LP - Low-Power Single-port Synchronous Static RAM
- Positive-edge clock operation
- Dual bank available
- Flexible aspect ratio (Ymux = 4, 8, 16, 32)
DPSRAM_LP - Low-Power Dual-port Synchronous Static RAM
- Positive-edge clock operation
- Flexible aspect ratio (Ymux = 4, 8, 16, 32)
SPARAM_LP - Low-Power Single-port Asynchronous Static RAM
- Synchronous write operation / Asynchronous read operation
- Dual bank available
- Flexible aspect ratio (Ymux = 4, 8, 16, 32)
DROM_LP - Low-Power Synchronous Diffusion programmable ROM
- Diffusion programmable coded
- Positive-edge clock operation
- Dual bank available
- Flexible aspect ratio (Ymux = 8, 16, 32)
MROM_LP - Low-Power Synchronous Metal programmable ROM
- Metal-2 programmable coded
- Positive-edge clock operation
- Dual bank available
- Flexible aspect ratio (Ymux = 8, 16, 32)
Samsung ASIC 5-6 STDM110
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Logic Symbol
Function Description
SPSRAM_LP is a single-port synchronous static RAM which is provided as a compiler. SPSRAM_LP is
intended for use in low-power applications. On the rising edge of CK, the write cycle is initiated when WEN
is low and CSN is low. The data on DI[] is written into the memory location specified on A[]. During the write
cycle, DOUT[] remains stable. On the rising edge of CK, the read cycle is initiated when WEN is high and
CSN is low. The data at DOUT[] become valid after a delay. While in standby mode that CSN is high, A[] and
DI[] are disabled, data stored in the memory is retained and DOUT[] remains stable. When OEN is high,
DOUT[] is placed in a high-impedance state.
Parameter Description
SPSRAM_LP is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bit per word(b), Column
mux(y) and Number of banks(ba).
CK CSN WEN OEN A DI DOUT COMMENT
X X X H X X Z Unconditional tri-state output
X H X L X X DOUT(t-1) De-selected (standby mode)
↑L L L Valid Valid DOUT(t-1) Write cycle
↑L H L Valid X MEM(A) Read Cycle
CK
CSN
WEN
OEN
A [m-1:0]
spsram_lp_<w>x<b>m<y>b<ba>
DOUT [b–1:0]
DI [b–1:0]
NOTES:
1. Words(w) is the number of words in SPSRAM_LP.
2. Bpw(b) is the number of bits per word.
3. Ymux(y) is one of the lower address decoder types.
4. Banks(ba) is the number of banks.
5. m = log2w
Features
• Suitable for low-power application
• Separated data I/O
• Synchronous operation
• Asynchronous tristate output
• Latched inputs and outputs
• Automatic power-down mode available
• Self-controlled circuit available
• Zero standby current
• Low noise output optimization
• Flexible aspect ratio
• Dual-bank scheme available
• Up to 256Kbits capacity
• Up to 16K number of words
• Up to 128 number of bit per word
STDM110 5-7 Samsung ASIC
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Pin Descriptions
Pin Capacitance Unit: [SL]
NOTE: Each pin’s capacitance is exactly same regardless of available mux types for same bank.
Parameters Ymux = 4 Ymux = 8 Ymux = 16 Ymux = 32
Words (w) ba = 1 Min 32 64 128 256
Max 1024 2048 4096 8192
Step 16 32 64 128
ba = 2 Min 64 128 256 512
Max 2048 4096 8192 16384
Step 32 64 128 256
Bpw (b) Min 1 1 1 1
Max 128 64 32 16
Step 1 1 1 1
Name I/O Description
CK Clock Clock input. CSN, WEN, A[] and DI[] are latched into the RAM on the rising
edge of CK. If CSN and WEN are low on the rising edge of CK, the RAM is in
write mode. If WEN is high on the rising edge of CK, the RAM is in read mode.
Upon the falling edge of CK, the RAM is in a precharge state.
CSN Chip
Enable Chip enable input. The chip enable is active-low and is latched into the RAM on
the rising edge of CK. When CSN is low, the RAM is enabled for reading or
writing, depending on the state of WEN. When CSN is high, the RAM goes to
the standby mode and is disabled for reading or writing. DOUT remains
previous data output.
WEN Read/Write
Enable Read or write enable input. The read/write enable is latched into the RAM on
the rising edge of CK. When WEN is low, data are written to the addressed
location and DOUT remains stable. When WEN is high, data from the
addressed word are present at DOUT.
OEN Data
Output
Enable
Data output enable input. The data output enable is asynchronously operated
regardless of the state of other input. When OEN is high, DOUT is disabled and
goes to high-impedance state.
A [ ] Address Address input bus. The address is latched into the RAM on the rising edge of
CK.
DI [ ] Data Input Data input bus. Data are latched on the rising edge of CK. Data input is written
into the addressed location in write mode.
DOUT [ ] Data
Output Data output bus. Data output is valid after the rising edge of CK while the RAM
is in read mode. Data output remains previous data output while the RAM is in
write mode.
CK CSN WEN OEN A DI DOUT
ba = 1 8.15 14.34 7.73 5.75 9.02 3.07 9.44
ba = 2 8.15 14.34 7.73 5.75 9.02 3.07 9.44
Samsung ASIC 5-8 STDM110
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Block Diagrams
SPSRAM_LP has 2 different physical architectures due to the word depth. For a specific configuration, only
one of these architectures is generated from SPSRAM_LP compiler. Power is only consumed by the bank
that is selected by the address and the other bank will be in idle mode.
Application Notes
1. Permitting over-the-cell routing.
In chip-level layout, over-the-cell routing in SPSRAM_LP is permitted only for Metal-5 layer.
2. Incoming power bus should be adjusted to guarantee NOT more than 10% voltage drop at typical-case
current levels.
3. Power stripe should be tapped from both sides of SPSRAM_LP.
4. Power reduction during standby mode.
The standby power is measured on the condition that only CSN is in disable mode and other signals are
in operation mode. If any of signals are activated while in standby mode, the power will be consumed
because the input switching activities are occurred by the signal transition. Therefore to reduce
unnecessary power consumption, you should keep stable for all signals while standby mode.
<1-bank>
RAM Core
Word-line Decoder
X-Dec
Word-line Decoder
RAM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
I/O Driver Address &
Clock Buffers I/O Driver
<2-bank>
RAM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
RAM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
RAM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
RAM Core
I/O Driver Address &
Clock Buffers I/O Driver
STDM110 5-9 Samsung ASIC
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Characteristics
Definition for AC Timing (ns)
Symbol Description Symbol Description
tcyc Clock cycle time tckh Clock pulse width high
tckl Clock pulse width low tas Address setup time
tah Address hold time tcs CSN setup time
tch CSN hold time tds Data-In setup time
tdh Data-In hold time tws WEN setup time
twh WEN hold time tacc Data access time
tda De-access time tdz DOUT drive to high-Z time
tzd DOUT high-Z to drive time tod OEN to valid output time
Definition for Power Consumption (µW/MHz)
Power_read The dynamic average power consumption while in a read cycle
Power_write The dynamic average power consumption while in a write cycle
Power_standby The standby power consumption while CSN is high
Definition for Area (µm)
Width The physical width in X-direction
Height The physical height in Y-direction
Samsung ASIC 5-10 STDM110
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Reference Table
* For Ymux=4 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on condition that CSN is High and the others are in normal operation mode.
Parameters
words 256 512 512 1024 768 1536 1024 2048
bpw 32 32 64 64 96 96 128 128
ba 12121212
Timing (ns)
tcyc 6.90 7.95 8.23 9.47 9.61 10.91 11.05 12.28
tckl 1.96 2.44 2.06 2.69 2.18 2.92 2.32 3.15
tckh 3.48 3.82 4.21 4.64 4.88 5.41 5.51 6.14
tas 0.72 1.06 0.80 1.16 0.90 1.27 1.02 1.37
tah 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.73
tcs 1.60 2.29 1.74 2.58 1.87 2.85 2.00 3.11
tch 0.50 0.84 0.50 0.94 0.50 1.04 0.50 1.14
tds 0.71 0.89 0.71 1.00 0.71 1.12 0.71 1.23
tdh 1.26 1.82 1.39 2.05 1.49 2.25 1.57 2.43
tws 1.20 1.52 1.27 1.65 1.32 1.76 1.33 1.83
twh 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.73
tacc 4.66 5.09 5.57 6.16 6.42 7.18 7.22 8.16
tda 4.10 4.46 5.00 5.48 5.85 6.45 6.65 7.36
tdz 0.99 0.98 1.13 1.12 1.24 1.23 1.33 1.32
tzd 1.20 1.20 1.35 1.35 1.47 1.47 1.57 1.56
tod 1.33 1.33 1.48 1.48 1.60 1.60 1.70 1.69
Power (µW/MHz)
Power_read 67.62 77.96 133.94 161.06 206.41 259.57 285.03 373.49
Power_write 84.55 91.75 184.49 200.31 310.51 339.26 462.60 508.60
Power_standby 0.53 2.06 0.58 2.55 0.67 3.10 0.81 3.71
Area (µm)
Width 700.90 700.90 1303.55 1303.55 1906.21 1906.21 2508.86 2508.86
Height 483.42 927.14 807.26 1574.82 1131.10 2222.50 1454.94 2870.18
STDM110 5-11 Samsung ASIC
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Reference Table
* For Ymux=8 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on condition that CSN is High and the others are in normal operation mode.
Parameters
words 512 1024 1024 2048 1536 3072 2048 4096
bpw 16 16 32 32 48 48 64 64
ba 12121212
Timing (ns)
tcyc 6.90 7.93 8.22 9.43 9.62 10.85 11.08 12.19
tckl 1.99 2.45 2.07 2.71 2.11 2.95 2.12 3.15
tckh 3.49 3.82 4.21 4.65 4.88 5.41 5.51 6.13
tas 0.73 1.06 0.76 1.16 0.79 1.27 0.82 1.37
tah 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.74
tcs 1.60 2.26 1.68 2.53 1.74 2.79 1.79 3.04
tch 0.50 0.84 0.50 0.94 0.50 1.04 0.50 1.13
tds 0.70 0.89 0.70 1.00 0.70 1.12 0.70 1.23
tdh 1.24 1.80 1.34 2.01 1.43 2.19 1.49 2.35
tws 1.20 1.52 1.28 1.65 1.32 1.76 1.33 1.83
twh 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.74
tacc 4.71 5.16 5.61 6.23 6.47 7.25 7.27 8.22
tda 4.12 4.49 5.02 5.50 5.87 6.47 6.67 7.38
tdz 0.96 0.95 1.06 1.06 1.15 1.14 1.21 1.21
tzd 1.17 1.17 1.28 1.28 1.37 1.37 1.44 1.44
tod 1.30 1.30 1.41 1.41 1.50 1.50 1.57 1.57
Power (µW/MHz)
Power_read 47.39 55.61 89.05 107.40 133.83 166.91 181.74 234.14
Power_write 57.85 63.52 118.53 129.12 193.27 210.96 282.08 309.04
Power_standby 0.52 2.05 0.59 2.57 0.67 3.11 0.77 3.66
Area (µm)
Width 700.90 700.90 1303.55 1303.55 1906.21 1906.21 2508.86 2508.86
Height 483.42 927.14 807.26 1574.82 1131.10 2222.50 1454.94 2870.18
Samsung ASIC 5-12 STDM110
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Reference Table
* For Ymux=16 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on condition that CSN is High and the others are in normal operation mode.
Parameters
words 1024 2048 2048 4096 3072 6144 4096 8192
bpw 8 8 16 16 24 24 32 32
ba 12121212
Timing (ns)
tcyc 6.90 7.93 8.23 9.42 9.62 10.82 11.09 12.15
tckl 1.97 2.44 2.03 2.71 2.08 2.95 2.13 3.15
tckh 3.50 3.82 4.21 4.65 4.88 5.41 5.50 6.13
tas 0.73 1.06 0.75 1.17 0.76 1.27 0.76 1.36
tah 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.73
tcs 1.60 2.25 1.67 2.51 1.72 2.76 1.75 3.00
tch 0.50 0.84 0.50 0.94 0.50 1.04 0.50 1.13
tds 0.70 0.88 0.70 1.00 0.70 1.12 0.70 1.23
tdh 1.23 1.79 1.32 1.99 1.40 2.16 1.45 2.31
tws 1.20 1.52 1.28 1.65 1.32 1.76 1.33 1.84
twh 1.12 1.39 1.17 1.53 1.20 1.64 1.21 1.73
tacc 4.78 5.25 5.68 6.32 6.53 7.33 7.34 8.30
tda 4.15 4.53 5.05 5.53 5.89 6.49 6.69 7.40
tdz 0.94 0.93 1.03 1.02 1.10 1.09 1.15 1.15
tzd 1.15 1.15 1.25 1.25 1.32 1.32 1.37 1.37
tod 1.28 1.28 1.38 1.38 1.45 1.45 1.50 1.50
Power (µW/MHz)
Power_read 36.39 42.92 64.92 77.60 95.03 116.16 126.73 158.60
Power_write 44.55 49.38 85.67 93.63 134.90 147.06 192.24 209.68
Power_standby 0.51 2.05 0.58 2.55 0.66 3.06 0.76 3.57
Area (µm)
Width 700.90 700.90 1303.55 1303.55 1906.21 1906.21 2508.86 2508.86
Height 483.42 927.14 807.26 1574.82 1131.10 2222.50 1454.94 2870.18
STDM110 5-13 Samsung ASIC
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Reference Table
* For Ymux=32 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on condition that CSN is High and the others are in normal operation mode.
Parameters
words 2048 4096 4096 8192 6144 12288 8192 16384
bpw 448812121616
ba 12121212
Timing (ns)
tcyc 6.97 8.03 8.31 9.51 9.72 10.92 11.20 12.25
tckl 1.94 2.45 2.02 2.71 2.07 2.95 2.10 3.15
tckh 3.60 3.93 4.31 4.74 4.97 5.50 5.58 6.21
tas 0.73 1.07 0.74 1.17 0.74 1.27 0.75 1.37
tah 1.10 1.39 1.16 1.53 1.20 1.64 1.21 1.73
tcs 1.57 2.25 1.64 2.52 1.69 2.77 1.74 3.01
tch 0.50 0.84 0.50 0.94 0.50 1.04 0.50 1.13
tds 0.70 0.89 0.70 1.00 0.70 1.12 0.70 1.23
tdh 1.24 1.79 1.34 1.99 1.41 2.17 1.45 2.31
tws 1.16 1.52 1.25 1.65 1.31 1.76 1.34 1.84
twh 1.10 1.39 1.16 1.53 1.20 1.64 1.21 1.73
tacc 5.01 5.54 5.93 6.60 6.79 7.62 7.60 8.60
tda 4.32 4.70 5.21 5.71 6.06 6.66 6.86 7.57
tdz 0.94 0.93 1.03 1.03 1.10 1.09 1.14 1.13
tzd 1.15 1.14 1.25 1.22 1.32 1.30 1.35 1.38
tod 1.28 1.28 1.38 1.38 1.45 1.45 1.48 1.49
Power (µW/MHz)
Power_read 31.30 36.62 54.24 63.82 77.99 93.00 102.56 124.15
Power_write 38.38 42.42 70.70 77.10 108.18 117.47 150.80 163.54
Power_standby 0.51 2.04 0.55 2.54 0.59 3.02 0.63 3.50
Area (µm)
Width 686.34 686.34 1295.06 1295.06 1903.78 1903.78 2512.50 2512.50
Height 483.42 927.14 807.26 1574.82 1131.10 2222.50 1454.94 2870.18
Samsung ASIC 5-14 STDM110
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Read Cycle
Write Cycle
tas
A
tah
(CSN = low, OEN = low, DI = don’t care)
tacc
WEN
tws twh
tda
DOUT
tcyc
CK
tckl tckh
A0 A2
Valid M[A0] M[A1] M[A2]
A1
tas
A
tah
(CSN = low, OEN = don’t care)
WEN
tws twh
DI
tcyc
CK
tckl tckh
A0 A2
A1
tds tdh
D0 D2
D1
STDM110 5-15 Samsung ASIC
SPSRAM_LP
Low-Power Single-Port Synchronous Static RAM
Read Cycle with CSN Controlled
OEN Controlled Output Enable
NOTE: “don't care” means the condition that these pins are in normal operation mode.
tas
A
tah
(OEN = low, WEN = high, DI = don’t care)
CSN
tcs tch
DOUT
tcyc
CK
tckl tckh
A0 A2
A1
tda
tacc
M(A1)
M(A0)
(CK, A, WEN, D, CSN = don’t care)
tod tdz
Hi-Z VALID
OEN
DOUT Hi-Z
tzd
Samsung ASIC 5-16 STDM110
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Logic Symbol
Function Description
DPSRAM_LP is a dual-port synchronous static RAM which is provided as a compiler. DPSRAM_LP is
intended for use in low-power applications. Each port is fully independent. On the rising edge of CK1 (CK),
the write cycle is initiated when WEN1 (WEN2) is low and CSN1 (CSN2) is low. The data on DI1[] (DI2[]) is
written into the memory location specified on A1[](A2[]). During the write cycle, DOUT1[] (DOUT2[]) remains
stable. On the rising edge of CK1 (CK2), the read cycle is initiated when WEN1 (WEN2) is high and
CSN1(CSN2) is low. The data at DOUT1[] (DOUT2[]) become valid after a delay. While in standby mode that
CSN1(CSN2) is high, A1[] (A2[]) and DI1[] (DI2[]) are disabled, data stored in the memory is retained and
DOUT1[] (DOUT2[]) remains stable. When OEN1 (OEN2) is high, DOUT1[] (DOUT2[]) is placed in a
high-impedance state.
DPSRAM_LP Function Table
CK1
CK2 CSN1
CSN2 WEN1
WEN2 OEN1
OEN2 A1
A2 DI1
DI2 DOUT1
DOUT2 Comment
X X X H X X Z Unconditional tri-state output
X H X L X X DOUT(t-1) De-selected (standby mode)
↑L L L Valid Valid DOUT(t-1) Write cycle
↑L H L Valid X MEM(A) Read Cycle
Features
• Suitable for low-power applications
• Synchronous operation
• Automatic power-down mode available
• Self-controlled circuit available
• Asynchronous tristate output
• Low noise output optimization
• Separated data I/O
• Flexible aspect ratio
• Zero standby current
• Latched inputs and outputs
• Up to128Kbits capacity
• Up to 8K number of words
• Up to 128 number of bit per word
NOTES:
1. Words (w) is the number of words in DPSRAM_LP.
2. Bpw (b) is the number of bits per word.
3. Ymux (y) is one of the column mux types.
4. m = log2w
CK1
CK2
CSN1
CSN2
WEN1
dpsram_lp_<w>x<b>m<y>
DOUT1 [b-1:0]
WEN2
OEN1
OEN2
A1 [m-1:0]
A2 [m-1:0]
DI1 [b-1:0]
DI2 [b-1:0]
DOUT2 [b-1:0]
STDM110 5-17 Samsung ASIC
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Parameter Description
DPSRAM_LP is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bits per word(b) and column
mux(y).
Pin Descriptions
Pin Capacitance (Unit = SL)
NOTE: Each pin’s capacitance is exactly same regardless of available mux types.
Parameters Ymux = 4 Ymux = 8 Ymux = 16 Ymux = 32
Words (w) Min 32 64 128 256
Max 1024 2048 4096 8192
Step 16 32 64 128
Bpw (b) Min 1111
Max 128 64 32 16
Step 1111
Name Type Description
CK1
CK2 Clock Clock input. CSN, WEN, A[] and DI[] are latched into the RAM on the rising
edge of CK. If CSN and WEN are low on the rising edge of CK, the RAM is in
write mode. If WEN is high on the rising edge of CK, the RAM is in read
mode. Upon the falling edge of CK, the RAM is in a precharge state.
CSN1
CSN2 Chip
Enable Chip enable input. The chip enable is active-low and is latched into the RAM
on the rising edge of CK. When CSN is low, the RAM is enabled for reading
or writing, depending on the state of WEN. When CSN is high, the RAM goes
to the standby mode and is disabled for reading or writing. DOUT remains
previous data output.
WEN1
WEN2 Read/Write
Enable Read or write enable input. The read/write enable is latched into the RAM on
the rising edge of CK. When WEN is low, data are written to the addressed
location and DOUT remains stable. When WEN is high, data from the
addressed word are present at DOUT.
OEN1
OEN2 Data
Output
Enable
Data output enable input. The data output enable is asynchronously operated
regardless of the state of other inputs. When OEN is high, DOUT is disabled
and goes to high-impedance state.
A1 [ ]
A2 [ ] Address Address input bus. The address is latched into the RAM on the rising edge of
CK.
DI1 [ ]
DI2 [ ] Data Input Data input bus. Data are latched on the rising edge of CK. Data input is
written into the addressed location in write mode.
DOUT1 [ ]
DOUT2 [ ] Data
Output Data output bus. Data output is valid after the rising edge of CK while the
RAM is in read mode. Data output remains previous data output while the
RAM is in write mode.
CK CSN WEN OEN A DI DOUT
5.04 12.00 7.25 4.51 8.02 4.94 9.13
Samsung ASIC 5-18 STDM110
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Block Diagram
Application Notes
1. Permitting over-the-cell routing
In chip-level layout, over-the-cell routing in DPSRAM_LP is permitted for only Metal-5 layer.
2. Incoming power bus should be adjusted to guarantee NOT more than 10% voltage drop at typical-case
current levels.
3. Power stripe should be tapped from both sides of DPSRAM_LP.
4. Contention mode in same address access
In DPSRAM_LP, simultaneous operation by both ports on the same memory address, as write/write,
write/read or read/write operation, causes a contention problem. Simultaneous operation is defined as a
state in which both ports are enabled, both address buses are equal at the rising edge of CK.
DPSRAM_LP has no scheme preventing the contention. Due to simultaneous operation, silicon will
behave unpredictably. A write operation cannot end and data appearing at outputs may not be valid.
Please refer to the timing diagrams if you want to avoid the contention mode between both ports. In
write/write operation, the data stored at the current address will be unpredictable. In write/read or
read/write operation, the read port is invalid while the write port is still valid. If you want to avoid the
contention mode, you have to give the value greater than tcc (clock-to-clock setup time). However,
simultaneous read/read is allowable without any restrictions.Power reduction during standby mode.
5. Power reduction during standby mode
The standby power is measured on the condition that only CSN is in disable mode and other signals are
in operation mode. If any of signals are activated while in standby mode, the power will be consumed
because the input switching activities are occurred by the signal transition. Therefore, to reduce
unnecessary power consumption, you should keep stable for all signals while standby mode.
Word-line Decoder in Port1
X-Dec in Port1
RAM Core
X-Dec in Port2
Word-line Decoder in Port2
Y-Dec &
Sense Amp.
in Port1 Control Block Y-Dec &
Sense Amp.
in Port1
Address &
Clock Buffers
in Port1 I/O Driver Address &
Clock Buffers
in Port2
STDM110 5-19 Samsung ASIC
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Characteristics
Definition for AC Timing (ns)
Symbol Description Symbol Description
tcyc Clock cycle time tckl Clock pulse width low
tckh Clock pulse width high tcc Clock to Clock Setup time
tas Address setup time tah Address hold time
tcs CSN setup time tch CSN hold time
tds Data-In setup time tdh Data-In hold time
tws WEN setup time twh WEN hold time
tacc Data access time tda De-access time
tdz DOUT drive to high-Z time tzd DOUT high-Z to drive time
tod OEN to valid output time
Definition for Power Consumption (µW/MHz)
Power_read The dynamic average power consumption while in a read cycle
Power_write The dynamic average power consumption while in a write cycle
Power_standby The standby power consumption while CSN is high
Definition for Area (µm)
Width The physical width in X-direction
Height The physical height in Y-direction
Samsung ASIC 5-20 STDM110
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Reference Table
* For Ymux=4 (Typical process2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTES:
1. In power consumption of DPSRAM_LP, only one port is measured and the other port is isolated.
2. Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 256 512 768 1024
bpw 32 64 96 128
Timing (ns)
tcyc 7.15 9.31 11.55 13.84
tckl 1.92 2.20 2.60 3.10
tckh 3.44 4.55 5.74 7.02
tcc 3.03 4.14 5.32 6.57
tas 0.77 1.02 1.31 1.62
tah 0.93 0.97 0.98 0.98
tcs 1.79 2.22 2.74 3.36
tch 0.45 0.45 0.45 0.44
tds 0.34 0.34 0.34 0.34
tdh 1.24 1.52 1.81 2.12
tws 1.20 1.26 1.28 1.27
twh 0.93 0.97 0.98 0.98
tacc 4.55 5.91 7.36 8.93
tda 4.07 5.42 6.88 8.45
tdz 1.10 1.39 1.69 2.00
tzd 1.30 1.59 1.89 2.20
tod 1.42 1.71 2.01 2.32
Power (µW/MHz)
Power_read 91.02 179.16 278.26 388.31
Power_write 1.21 1.72 2.81 4.46
Power_standby 111.04 248.10 427.72 649.88
Area (µm)
Width 1063.71 2012.43 2961.15 3909.87
Height 524.26 873.70 1223.14 1572.58
STDM110 5-21 Samsung ASIC
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Reference Table
* For Ymux=8 (Typical process2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTES:
1. In power consumption of DPSRAM_LP, only one port is measured and the other port is isolated.
2. Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 512 1024 1536 2048
bpw 16 32 48 64
Timing (ns)
tcyc 7.10 9.27 11.52 13.83
tckl 1.90 2.17 2.55 3.04
tckh 3.44 4.55 5.74 7.03
tcc 3.03 4.14 5.32 6.57
tas 0.77 1.04 1.34 1.66
tah 0.94 0.97 0.99 0.98
tcs 1.72 2.11 2.62 3.26
tch 0.45 0.45 0.45 0.44
tds 0.34 0.34 0.34 0.34
tdh 1.20 1.42 1.66 1.90
tws 1.20 1.26 1.28 1.27
twh 0.94 0.97 0.99 0.98
tacc 4.63 6.00 7.46 9.02
tda 4.10 5.46 6.92 8.49
tdz 1.04 1.28 1.51 1.76
tzd 1.25 1.49 1.72 1.96
tod 1.37 1.60 1.84 2.08
Power (µW/MHz)
Power_read 69.02 125.93 188.38 256.35
Power_write 80.79 166.09 274.18 405.07
Power_standby 0.81 1.06 1.55 2.30
Area (µm)
Width 1063.71 2012.43 2961.15 3909.87
Height 524.26 873.70 1223.14 1572.58
Samsung ASIC 5-22 STDM110
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Reference Table
* For Ymux=16 (Typical process2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTES:
1. In power consumption of DPSRAM_LP, only one port is measured and the other port is isolated.
2. Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 1024 2048 3072 4096
bpw 8 162432
Timing (ns)
tcyc 7.08 9.24 11.51 13.89
tckl 1.93 2.24 2.56 2.90
tckh 3.44 4.55 5.74 7.03
tcc 3.03 4.14 5.31 6.57
tas 0.74 0.99 1.28 1.59
tah 0.93 0.97 0.98 0.98
tcs 1.74 2.16 2.61 3.06
tch 0.45 0.45 0.45 0.44
tds 0.34 0.34 0.34 0.34
tdh 1.17 1.37 1.57 1.79
tws 1.20 1.26 1.28 1.27
twh 0.93 0.97 0.98 0.98
tacc 4.69 6.07 7.53 9.08
tda 4.12 5.48 6.93 8.50
tdz 1.02 1.22 1.43 1.63
tzd 1.22 1.43 1.64 1.85
tod 1.34 1.55 1.75 1.97
Power (µW/MHz)
Power_read 65.42 105.59 148.64 194.56
Power_write 74.14 133.68 206.20 291.70
Power_standby 0.78 0.92 1.18 1.55
Area (µm)
Width 1063.71 2012.43 2961.15 3909.87
Height 524.26 873.70 1223.14 1572.58
STDM110 5-23 Samsung ASIC
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Reference Table
* For Ymux=32 (Typical process2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTES:
1. In power consumption of DPSRAM_LP, only one port is measured and the other port is isolated.
2. Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 2048 4096 6144 8192
bpw 4 8 12 16
Timing (ns)
tcyc 7.05 9.23 11.51 13.91
tckl 1.92 2.23 2.54 2.87
tckh 3.44 4.55 5.74 7.03
tcc 3.04 4.13 5.31 6.57
tas 0.74 0.99 1.28 1.59
tah 0.94 0.97 0.99 0.98
tcs 1.72 2.14 2.57 3.01
tch 0.45 0.45 0.45 0.44
tds 0.34 0.34 0.34 0.34
tdh 1.16 1.35 1.54 1.73
tws 1.20 1.26 1.28 1.27
twh 0.94 0.97 0.99 0.98
tacc 4.79 6.19 7.66 9.20
tda 4.16 5.51 6.97 8.54
tdz 1.01 1.20 1.38 1.57
tzd 1.21 1.40 1.59 1.79
tod 1.33 1.52 1.71 1.91
Power (µW/MHz)
Power_read 58.88 90.94 124.54 159.69
Power_write 65.90 113.17 168.58 232.14
Power_standby 0.76 0.85 0.99 1.18
Area (µm)
Width 1063.71 2012.43 2961.15 3909.87
Height 524.26 873.70 1223.14 1572.58
Samsung ASIC 5-24 STDM110
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Timing Diagrams
Read Cycle
Write Cycle
tas
A
tah
(CSN = low, OEN = low, DI = don’t care)
tacc
WEN
tws twh
tda
DOUT
tcyc
CK
tckl tckh
A0 A2
Valid M[A0] M[A1] M[A2]
A1
tas
A
tah
(CSN= low, OEN = don’t care)
WEN
tws twh
DI
tcyc
CK
tckl tckh
A0 A2
A1
tds tdh
D0 D2
D1
STDM110 5-25 Samsung ASIC
DPSRAM_LP
Low-Power Dual-Port Synchronous Static RAM
Read Cycle with CSN Controlled
OEN Controlled Output Enable
Contention Mode
NOTE: “don't care” means the condition that these pins are in normal operation mode.
tas
A
tah
(OEN = low, WEN = high, DI = don’t care)
CSN
tcs tch
DOUT
tcyc
CK
tckl tckh
A0 A2
A1
tda
tacc
M[A1]
M[A0]
(CK, A, WEN, DI, CSN = don’t care)
tod tdz
Hi-Z VALID
OEN
DOUT Hi-Z
tzd
CK1 tcc
CK2
(A1 = A2)
Samsung ASIC 5-26 STDM110
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Logic Symbol
Function Description
SPARAM_LP is a single-port asynchronous static RAM which is provided as a compiler. SPARAM_LP is
intended for use in low-power applications. At the falling edge of WEN, the write cycle is initiated. At the
rising edge of WEN, the write cycle is ended. During the write cycle, the data on DI[] is written into the
memory location specified on A[]. The read cycle is initiated when WEN is high and CSN is low. The data at
DOUT[] become valid after a delay whenever A[] transition is detected. While in standby mode that CSN is
high, A[] and DI[] are disabled, data stored in the memory is retained and DOUT[] remains stable. When
OEN is high, DOUT[] is placed in a high-impedance state.
SPARAM_LP Function Table
CSN WEN OEN A DI DOUT Comment
X X H X X Z Unconditional tri-state output
H X L X X DOUT(t-1) De-selected (standby mode)
L↓L Valid Valid DOUT(t-1) Write cycle starts
L↑L Valid Valid MEM(A) Write cycle ends and read cycle starts
L L L Stable Valid DOUT(t-1) Write cycle
L H L Toggle X MEM(A) Read cycle
Features
• Suitable for low-power applications
• Standby (power down) mode available
• Separated data I/O
• Asynchronous operation
• Asynchronous tri-state output
• Address transition detectors
• Write enable transition detector
• Chip select transition detector
• Bank select transition detector
• Automatic power-down mode
• Low noise output optimization
• Zero standby current
• Flexible aspect ratio
• Dual bank scheme available
• Up to 256Kbits capacity
• Up to 16K number of words
• Up to 128 number of bit per word
CSN
WEN
OEN
A [m-1:0]
DI [b-1:0]
sparam_lp_<w>x<b>m<y>b<ba>
DOUT [b-1:0]
NOTES:
1. Words (w) is the number of words in SPARAM_LP.
2. Bpw (b) is the number of bits per word.
3. Ymux (y) is one of the column mux types.
5. m = log2w
4. Banks(ba) is the number of banks.
STDM110 5-27 Samsung ASIC
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Parameter Description
SPARAM_LP is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bit per word(b), Column
mux(y) and Number of banks(ba).
Pin Descriptions
Pin Capacitance Unit: [SL]
NOTE: Each pin’s capacitance is exactly same regardless of available mux types for same bank.
Parameters Ymux = 4 Ymux = 8 Ymux = 16 Ymux = 32
Words (w) ba = 1 Min 32 64 128 256
Max 1024 2048 4096 8192
Step 16 32 64 128
ba = 2 Min 64 128 256 512
Max 2048 4096 8192 16384
Step 32 64 128 256
Bpw (b) Min 1111
Max 128 64 32 16
Step 1111
Name I/O Description
CSN Chip Enable Chip select input. The chip select signal acts as the memory enable signal
for selections of multiple blocks. When CSN is high, the memory goes to
stand-by (power down) mode and no access to the memory can occur.
Conversely, if low, a read or write access can occur. When CSN falls, an
access is initiated.
WEN Read/Write
Enable Write enable input. The write enable signal selects the type of memory
access. The high state for a read access and the low state for a write
access. Upon the rising edge of WEN, a write access completed and a read
access initiated.
OEN Data Output
Enable Output enable input. The output enable signal controls the output drivers
from driven to tri-state condition unconditionally.
A [ ] Address Address input bus. A[] should be stable when WEN is low. The address
selects the location to be accessed. When the address changes, the
transition is detected and the internal clock pulse is generated.
DI [ ] Data Input Data input bus. The data input is written to the accessed location when
WEN is low.
DOUT [ ] Data Output Data output bus. The data output is data stored in the accessed location
during a read access. Data output driver has tri-state logic. When OEN is
low, the driver drives a certain value. Otherwise, data output keeps Hi-Z
state. During a write access, data on DOUT is predictable.
CSN WEN OEN A DI DOUT
ba = 1 1.87 1.87 1.87 3.91 1.87 7.12
ba = 2 1.87 1.87 1.87 3.91 1.87/ 7.12
Samsung ASIC 5-28 STDM110
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Block Diagrams
SPARAM_LP has 2 different physical architectures due to the word depth. Optionally, one of these
architectures is generated from SPARAM_LP compiler. In dual-bank, the bank selected by the address is
only activated while the other bank is in idle mode.
Application Notes
1. Permitting over-the-cell routing
In chip-level layout, over-the-cell routing in SPARAM_LP is permitted for only Metal-5 layer.
2. Incoming power bus should be adjusted to guarantee NOT more than 10% voltage drop at typical-case
current levels.
3. Power stripe should be tapped from both sides of SPARAM_LP.
4. Avoiding short transition on the address bus
In SPARAM_LP, rather than the write operation which is synchronously performed by WEN signal, the
read operation is asynchronously performed whenever the address transition is occurred. In this case, if
the short transition on the address, called a skew, is happened, since SPARAM_LP recognizes the short
address transition as the stable address transition and do perform a read operation. At that time, while in
the read operation, the data stored in the memory may be corrupted due to the short transition. To
prevent such fail, the stable address cycle time (tcyc) is required. The essential requirement to
recognize valid address transition is that at least minimum address period should be equal or greater
than tacc (access time).
5. Power reduction during standby mode.
The standby power is measured on the condition that only CSN is in disable mode and other signals are
in operation mode. If any of signals are activated while in standby mode, the power will be consumed
because the input switching activities are occurred by the signal transition. Therefore, to reduce
unnecessary power consumption, you should keep stable for all signals while standby mode.
<1-bank>
RAM Core
Word-line Decoder
X-Dec
Word-line Decoder
RAM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
I/O Driver Address
Buffers I/O Driver
<2-bank>
RAM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
RAM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
RAM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
RAM Core
I/O Driver Address
Buffers I/O Driver
STDM110 5-29 Samsung ASIC
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Characteristics
Definition for AC Timing (ns)
Symbol Description Symbol Description
tcyc Address cycle time tas Address setup time
tcas Address setup time for CSN rise tah Address hold time
twh WEN hold time tcs CSN setup time
tch CSN hold time tds Data-In setup time
tdh Data-In hold time twen WEN pulse width low
tacc Data access time for read cycle twacc Data access time for WEN rise
tda De-access time twda De-access time for WEN rise
tzd DOUT high-Z to drive time tdz DOUT drive to high-Z time
tod OEN to valid output time
Definition for Power Consumption (µW/MHz)
Power_read The dynamic average power consumption while in a read cycle
Power_write The dynamic average power consumption while in a write cycle
Power_standby The standby power consumption while CSN is high
Definition for Area (µm)
Width The physical width in X-direction
Height The physical height in Y-direction
Samsung ASIC 5-30 STDM110
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Reference Table
* For Ymux=4 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 256 512 512 1024 768 1536 1024 2048
bpw 32 32 64 64 96 96 128 128
ba 12121212
Timing (ns)
tcyc 5.84 5.98 6.39 6.60 6.95 7.23 7.50 7.85
tas 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tcas 6.14 6.28 6.69 6.90 7.24 7.52 7.80 8.15
tah 2.36 2.38 2.89 2.92 3.42 3.45 3.95 3.98
twh 6.14 6.28 6.69 6.90 7.24 7.52 7.80 8.15
tds 0.10 0.29 0.15 0.41 0.15 0.45 0.09 0.42
tdh 0.89 0.84 1.02 0.92 1.15 1.00 1.27 1.08
tcs 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tch 1.95 2.13 2.06 2.31 2.17 2.49 2.28 2.68
twen 4.11 4.32 4.59 4.91 5.07 5.50 5.56 6.09
tacc 5.84 5.98 6.39 6.60 6.95 7.23 7.50 7.85
tda 1.40 1.40 1.40 1.40 1.40 1.40 1.40 1.40
twda 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
twacc 1.66 1.83 1.76 2.01 1.87 2.19 1.98 2.38
tdz 0.43 0.43 0.53 0.53 0.63 0.63 0.72 0.72
tzd 0.41 0.41 0.51 0.51 0.61 0.61 0.70 0.69
tod 0.57 0.57 0.67 0.67 0.76 0.77 0.86 0.86
Power (µW/MHz)
Power_read 63.27 76.91 113.57 145.13 161.88 218.96 208.20 298.42
Power_write 100.89 112.83 222.37 257.95 388.11 460.72 598.11 721.14
Power_standby 7.90 12.97 13.94 24.37 20.01 38.01 26.12 53.88
Area (µm)
Width 831.84 831.84 1437.28 1437.28 2042.72 2042.72 2648.17 2648.17
Height 529.32 1017.68 853.16 1665.36 1177.00 2313.04 1500.84 2960.72
STDM110 5-31 Samsung ASIC
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Reference Table
* For Ymux=8 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 512 1024 1024 2048 1536 3072 2048 4096
bpw 16 16 32 32 48 48 64 64
ba 12121212
Timing (ns)
tcyc 5.87 6.02 6.42 6.65 6.98 7.27 7.53 7.89
tas 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tcas 6.17 6.32 6.72 6.94 7.24 7.57 7.83 8.19
tah 2.37 2.38 2.90 2.92 3.42 3.45 3.95 3.98
twh 6.17 6.32 6.72 6.94 7.27 7.57 7.83 8.19
tds 0.18 0.31 0.24 0.45 0.25 0.51 0.18 0.49
tdh 0.85 0.77 0.99 0.85 1.12 0.93 1.24 1.01
tcs 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tch 1.98 2.17 2.09 2.36 2.20 2.54 2.31 2.72
twen 4.15 4.40 4.63 4.99 5.12 5.58 5.60 6.17
tacc 5.87 6.02 6.42 6.65 6.98 7.27 7.53 7.89
tda 1.40 1.40 1.40 1.40 1.40 1.40 1.40 1.40
twda 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
twacc 1.69 1.87 1.79 2.06 1.90 2.24 2.01 2.42
tdz 0.39 0.39 0.46 0.47 0.53 0.53 0.60 0.59
tzd 0.38 0.38 0.45 0.45 0.52 0.52 0.58 0.58
tod 0.54 0.54 0.61 0.60 0.67 0.67 0.74 0.73
Power (µW/MHz)
Power_read 44.19 55.30 74.14 96.59 103.00 140.58 130.78 187.28
Power_write 65.56 73.87 130.03 151.84 216.72 258.82 325.63 394.81
Power_standby 6.27 10.79 10.49 18.67 14.73 27.69 18.98 37.84
Area (µm)
Width 831.84 831.84 1437.28 1437.28 2042.72 2042.72 2648.17 2648.17
Height 529.32 1017.68 853.16 1665.36 1177.00 2313.04 1500.84 2960.72
Samsung ASIC 5-32 STDM110
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Reference Table
* For Ymux=16 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 1024 2048 2048 4096 3072 6144 4096 8192
bpw 8 8 16 16 24 24 32 32
ba 12121212
Timing (ns)
tcyc 5.93 6.12 6.48 6.73 7.03 7.35 7.58 7.97
tas 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tcas 6.22 6.42 6.77 7.04 7.32 7.65 7.87 8.27
tah 2.37 2.38 2.90 2.92 3.42 3.45 3.95 3.99
twh 6.22 6.42 6.77 7.04 7.32 7.65 7.87 8.27
tds 0.21 0.35 0.30 0.52 0.31 0.61 0.25 0.63
tdh 0.79 0.64 0.91 0.72 1.04 0.79 1.17 0.86
tcs 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tch 2.04 2.26 2.14 2.44 2.25 2.62 2.36 2.80
twen 4.23 4.55 4.71 5.14 5.19 5.72 5.68 6.31
tacc 5.93 6.12 6.48 6.73 7.03 7.35 7.58 7.97
tda 1.40 1.40 1.40 1.40 1.40 1.40 1.40 1.40
twda 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
twacc 1.74 1.96 1.85 2.14 1.95 2.32 2.06 2.50
tdz 0.38 0.38 0.43 0.43 0.48 0.48 0.53 0.53
tzd 0.36 0.36 0.41 0.41 0.46 0.46 0.52 0.52
tod 0.52 0.52 0.57 0.57 0.62 0.62 0.67 0.67
Power (µW/MHz)
Power_read 34.31 44.16 54.36 72.28 73.53 101.34 91.81 131.35
Power_write 47.88 54.83 83.70 99.21 130.96 158.44 189.65 232.52
Power_standby 5.43 9.90 8.70 16.10 12.14 22.88 15.51 30.24
Area (µm)
Width 831.84 831.84 1437.28 1437.28 2042.72 2042.72 2648.17 2648.17
Height 529.32 1017.68 853.16 1665.36 1177.00 2313.04 1500.84 2960.72
STDM110 5-33 Samsung ASIC
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Reference Table
* For Ymux=32 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 2048 4096 4096 8192 6144 12288 8192 16384
bpw 448812121616
ba 12121212
Timing (ns)
tcyc 6.05 6.31 6.59 6.91 7.12 7.52 7.66 8.12
tas 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tcas 6.35 6.62 6.89 7.22 7.42 7.82 7.96 8.42
tah 2.35 2.37 2.89 2.92 3.42 3.46 3.95 3.99
twh 6.35 6.62 6.89 7.22 7.42 7.82 7.96 8.42
tds 0.13 0.45 0.24 0.62 0.28 0.75 0.24 0.85
tdh 0.65 0.39 0.78 0.46 0.91 0.52 1.04 0.58
tcs 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
tch 2.13 2.43 2.24 2.44 2.34 2.78 2.45 2.96
twen 4.40 4.84 4.87 5.42 5.35 6.00 5.82 6.58
tacc 6.05 6.31 6.59 6.91 7.12 7.52 7.66 8.12
tda 1.40 1.40 1.40 1.40 1.40 1.40 1.40 1.40
twda 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
twacc 1.83 2.12 1.94 2.30 2.04 2.48 2.15 2.65
tdz 0.35 0.35 0.42 0.42 0.47 0.47 0.50 0.50
tzd 0.33 0.33 0.41 0.41 0.46 0.46 0.49 0.49
tod 0.49 0.49 0.56 0.56 0.62 0.62 0.65 0.65
Power (µW/MHz)
Power_read 28.17 37.11 43.53 58.99 58.48 81.37 73.04 104.24
Power_write 38.20 46.23 60.54 74.81 88.54 110.81 122.22 154.21
Power_standby 5.20 10.38 8.16 15.92 11.13 21.75 14.10 27.87
Area (µm)
Width 831.84 831.84 1437.28 1437.28 2042.72 2042.72 2648.17 2648.17
Height 529.32 1017.68 853.16 1665.36 1177.00 2313.04 1500.84 2960.72
Samsung ASIC 5-34 STDM110
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Timing Diagrams
Read Cycle
Read Cycle with CSN-Controlled
Basic Write Cycle
A
(WEN = high, CSN = low, OEN = low, DI = don’t care)
tacc
tda
DOUT
tcyc
M[A0] M[A1] M[A2] M[A3]
A0 A1 A2 A3
A
tacc
tda
DOUT
tcyc
Valid M[A0] M[A2]
A0 A1 A2 A3
tacc
tda
M[A1]
tacc
tda
CSN
(OEN = low, WEN = high, DI = don’t care)
tcas
A
tah
(CSN = low, OEN = don’t care)
WEN
tas twen
DI
A0 A1 A2
D1 D2
D0
tds tdh
STDM110 5-35 Samsung ASIC
SPARAM_LP
Low-Power Single-Port Asynchronous Static RAM
Write Cycle with CSN Controlled
Read-Modified-Write Cycle
NOTES:
1. When the wen hold time after the last address bit transition is satisfied, D+ will toggle in response to a successful
read of the initial contents of address A1. When the wen hold time after the last address bit transition is not
satisfied, D+ will go to unknown state.
2. Address bits are not allowed to change while WEN is low. If they do change, then the data for one or more
addresses in the memory array may be corrupted.
OEN Controlled Output Enable
NOTE: “don't care” means the condition that these pins are in normal operation mode.
A
tah
(OEN = don’t care)
WEN
tas twen
DI
A0 A1 A2
D1 D2
D0
tds tdh
CSN
tcs tch
A
tacc
tda
DOUT
tcyc
M[A0] M[A2]
A0 A1 A2
D+
tacc
twacc
WEN
(CSN = low, OEN = low)
DI D1 D2
D0
tds tdh
tcyc
tas twen tah
D1
tda
twda
(A, WEN, DI, CSN = don’t care)
tod tdz
Hi-Z VALID
OEN
DOUT Hi-Z
tzd
Samsung ASIC 5-36 STDM110
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Logic Symbol
Function Description
DROM_LP is a synchronous diffusion programmable ROM which is provided as a compiler. DROM_LP is
intended for use in low-power applications. The read cycle is initiated at the rising edge of CK. The data at
DOUT[] become valid after a delay. While in standby mode that CSN is high, A[] is disabled and DOUT[]
remains stable. When OEN is high, DOUT is placed in a high-impedance state.
DROM Function Table
Parameter Description
DROM_LP is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bits per word(b) and Column
mux(y) and Number of banks(ba).
CK CSN OEN A DOUT Comment
X X H X Z Unconditional tri-state output
X H L X DOUT(t-1) De-selected (standby mode)
↑L L Valid MEM(A) Read cycle
Features
• Suitable for low-power applications
• Diffusion-programmable code available
• Synchronous operation
• Asynchronous tri-state output
• Latched inputs and outputs
• Automatic power-down mode available
• Low noise output optimization
• Zero standby current
• Flexible aspect ratio
• Dual-bank scheme available
• Up to 512Kbits capacity
• Up to 16K number of words
• Up to 128 number of bits per word
CK
CSN
OEN DOUT [b–1:0]
drom_lp_<w>x<b>m<y>b<ba>
A [m-1:0]
NOTES:
1. Words (w) is the number of words in DROM_LP.
2. Bpw (b) is the number of bits per word.
3. Ymux (y) is one of the column mux types.
5. m = log2w
4. Banks (ba) is the number of banks.
STDM110 5-37 Samsung ASIC
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Pin Descriptions
Pin Capacitance (Unit = SL)
NOTE: Each pin’s capacitance is exactly same regardless of available mux types for same bank.
Parameters Ymux = 8 Ymux = 16 Ymux = 32
Words (w) ba = 1 Min 64 128 256
Max 2048 4096 8192
Step 32 64 128
ba = 2 Min 128 256 512
Max 4096 8192 16384
Step 64 128 256
Bpw (b) Min 2 2 2
Max 128 64 32
Step 1 1 1
Name I/O Description
CK Clock Clock input. CSN and A[] are latched into the ROM on the rising edge of CK. If
CSN is low on the rising edge of CK, the ROM is in read mode.
CSN Chip Enable Chip enable input. The chip enable is active-low and is latched into the ROM
on the rising edge of CK. When CSN is low, the ROM is enabled for reading.
When CSN is high, the ROM goes to the standby mode and is disabled for
reading. DOUT remains previous data output.
OEN Data Output
Enable Data output enable input. The data output enable is asynchronously operated
regardless of any inputs. When OEN is high, DOUT is disabled and goes to
high-impedance state.
A [ ] Address Address input bus. The address is latched into the ROM on the rising edge of
CK.
DOUT [ ] Data Output Data output bus. Data output is valid after the rising edge of CK while the
ROM is in read mode.
CK CSN OEN A DOUT
ba = 1 4.581 5.336 3.799 5.623 8.015
ba = 2 4.392 4.322 3.050 4.512 8.189
Samsung ASIC 5-38 STDM110
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Block Diagrams
DROM_LP has 2 different physical architectures due to the word depth. For a specific configuration, only
one of these architectures is generated from DROM_LP compiler. Power is consumed by the bank that is
selected by the address whereas the other bank will be in idle mode.
Application Notes
1. Permitting over-the-cell routing
In chip-level layout, over-the-cell routing in DROM_LP is permitted for only Metal-5 layer.
2. Incoming power bus should be adjusted to guarantee NOT more than 10% voltage drop at typical-case
current levels.
3. Power stripe should be tapped from both sides of DROM_LP.
4. Power reduction during standby mode.
The standby power is measured on the condition that only CSN is in disable mode and other signals are
in operation mode. If any of signals are activated while in standby mode, the power will be consumed
because the input switching activities are occurred by the signal transition. Therefore, to reduce
unnecessary power consumption, you should keep stable for all signals while standby mode.
<1-bank>
ROM Core
Word-line Decoder
X-Dec
Word-line Decoder
ROM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Output Driver Address
Buffers Output Driver
<2-bank>
ROM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
ROM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
ROM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
ROM Core
Output Driver Address
Buffers Output Driver
STDM110 5-39 Samsung ASIC
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Characteristics
Definition for AC Timing (ns)
Symbol Description Symbol Description
tcyc Clock cycle time tch CSN hold time from CK rise
tckl Clock pulse width low tacc Data access time
tckh Clock pulse width high tda De-access time
tas Address setup time tdz DOUT drive to high-Z time
tah Address hold time tzd DOUT high-Z to drive time
tcs CSN setup time tod OEN to Valid Output
Definition for Power Consumption (µW/MHz)
Power_read The dynamic average power consumption while in a read cycle
Power_standby The standby power consumption while CSN is high
Definition for Area (µm)
Width The physical width in X-direction
Height The physical height in Y-direction
Samsung ASIC 5-40 STDM110
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Reference Table
* For Ymux=8 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 512 1024 1024 2048 1536 3072 2048 4096
bpw 32 32 64 64 96 96 128 128
ba 12 1 212 1 2
Timing (ns)
tcyc 6.61 6.88 8.33 8.64 10.38 10.73 12.75 13.15
tckl 2.77 2.77 3.29 3.29 3.79 3.79 4.26 4.26
tckh 3.06 3.34 3.74 4.05 4.46 4.81 5.22 5.62
tas 0.10 1.81 0.10 1.86 0.10 1.90 0.10 1.95
tah 0.94 1.21 0.94 1.25 0.94 1.29 0.94 1.33
tcs 1.19 1.71 1.19 1.76 1.19 1.80 1.19 1.85
tch 0.84 1.11 0.84 1.15 0.84 1.19 0.84 1.23
tacc 4.88 5.26 5.43 5.86 6.18 6.67 7.13 7.68
tda 4.08 4.37 4.87 5.21 5.72 6.10 6.62 7.04
tdz 0.90 0.89 1.02 1.02 1.14 1.13 1.26 1.24
tzd 1.08 1.06 1.19 1.17 1.29 1.27 1.39 1.37
tod 1.20 1.18 1.31 1.29 1.42 1.40 1.52 1.50
Power (µW/MHz)
Power_read 83.64 87.72 188.40 198.14 322.93 340.02 487.24 513.36
Power_standby 0.43 2.31 0.48 2.71 0.53 3.10 0.57 3.49
Area (µm)
Width 511.53 511.53 883.93 883.93 1256.06 1256.06 1627.93 1627.93
Height 214.62 405.22 295.26 566.50 375.90 727.78 456.54 889.06
STDM110 5-41 Samsung ASIC
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Reference Table
* For Ymux=16 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 1024 2048 2048 4096 3072 6144 4096 8192
bpw 16 16 32 32 48 48 64 64
ba 12 1 212 1 2
Timing (ns)
tcyc 6.61 6.89 8.33 8.64 10.37 10.73 12.75 13.15
tckl 2.77 2.77 3.29 3.29 3.79 3.79 4.26 4.26
tckh 3.06 3.34 3.74 4.05 4.46 4.81 5.22 5.62
tas 0.10 1.81 0.10 1.86 0.10 1.90 0.10 1.95
tah 0.94 1.21 0.94 1.25 0.94 1.29 0.94 1.33
tcs 1.19 1.71 1.19 1.76 1.19 1.80 1.19 1.85
tch 0.84 1.11 0.84 1.15 0.84 1.19 0.84 1.23
tacc 4.95 5.37 5.49 5.97 6.23 6.77 7.19 7.78
tda 4.09 4.38 4.88 5.22 5.73 6.12 6.63 7.06
tdz 0.86 0.85 0.95 0.94 1.03 1.02 1.12 1.10
tzd 1.04 1.02 1.12 1.10 1.19 1.18 1.27 1.25
tod 1.17 1.15 1.24 1.23 1.32 1.31 1.40 1.38
Power (µW/MHz)
Power_read 59.28 63.60 125.92 134.31 207.91 221.25 305.28 324.42
Power_standby 0.43 2.30 0.47 2.69 0.51 3.08 0.54 3.47
Area (µm)
Width 511.24 511.24 883.86 883.86 1256.06 1256.06 1627.86 1627.86
Height 214.62 405.22 295.26 566.50 375.90 727.78 456.54 889.06
Samsung ASIC 5-42 STDM110
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Reference Table
* For Ymux=32 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 2048 4096 4096 8192 6144 12288 8192 16384
bpw 8 8 16 16 24 24 32 32
ba 12 1 212 1 2
Timing (ns)
tcyc 6.63 6.90 8.32 8.64 10.37 10.73 12.75 13.15
tckl 2.77 2.77 3.29 3.29 3.79 3.78 4.26 4.25
tckh 3.07 3.34 3.74 4.06 4.46 4.82 5.22 5.62
tas 0.10 1.81 0.10 1.86 0.10 1.90 0.10 1.95
tah 0.94 1.21 0.94 1.25 0.94 1.29 0.93 1.33
tcs 1.19 1.71 1.19 1.76 1.19 1.80 1.19 1.85
tch 0.84 1.11 0.84 1.15 0.84 1.19 0.84 1.23
tacc 5.07 5.56 5.59 6.14 6.33 6.94 7.29 7.96
tda 4.11 4.42 4.90 5.25 5.75 6.14 6.65 7.08
tdz 0.84 0.83 0.91 0.90 0.98 0.96 1.04 1.03
tzd 1.02 1.00 1.08 1.07 1.14 1.13 1.20 1.19
tod 1.15 1.13 1.21 1.19 1.27 1.25 1.33 1.31
Power (µW/MHz)
Power_read 47.53 51.47 95.27 102.51 151.15 162.15 215.17 230.40
Power_standby 0.42 2.32 0.46 2.74 0.50 3.18 0.53 3.63
Area (µm)
Width 510.65 510.65 883.69 883.69 1256.06 1256.06 1627.76 1627.76
Height 214.62 405.22 295.26 566.50 375.90 727.78 456.54 889.06
STDM110 5-43 Samsung ASIC
DROM_LP
Low-Power Synchronous Diffusion Programmable ROM
Timing Diagrams
Read Cycle
Read Cycle with CSN Controlled
OEN Controlled Output Enable
NOTE: “don’t care” means the condition that these pins are in normal operation mode.
tas
A
tah
(CSN, OEN = low)
tacc
tda
DOUT
tcyc
CK
tckl tckh
A0 A2
Valid M[A0] M[A1] M[A2]
A1
(OEN = low)
tch
tcs
CSN
DOUT
A1 A2
A0
A
tas tah
M[A1]
tacc
tda
CK tckl tckh
tcyc
M[A0]
(CK, A, CSN = don’t care)
tod tdz
Hi-Z VALID
OEN
DOUT Hi-Z
tzd
Samsung ASIC 5-44 STDM110
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Logic Symbol
Function Description
MROM_LP is a synchronous diffusion programmable ROM which is provided as a compiler. MROM_LP is
intended for use in low-power applications. The read cycle is initiated at the rising edge of CK. The data at
DOUT[] become valid after a delay. While in standby mode that CSN is high, A[] is disabled and DOUT[]
remains stable. When OEN is high, DOUT is placed in a high-impedance state.
MROM Function Table
CK CSN OEN A DOUT Comment
X X H X Z Unconditional tri-state output
X H L X DOUT(t-1) De-selected (standby mode)
↑L L Valid MEM(A) Read cycle
Features
• Suitable for low-power applications
• Metal-2 programmable code available
• Synchronous operation
• Asynchronous tri-state output
• Latched inputs and outputs
• Automatic power-down mode
• Low noise output optimization
• Zero standby current
• Flexible aspect ratio
• Dual-bank scheme available
• Up to 512Kbits capacity
• Up to 16K number of words
• Up to 128 number of bits per word
CK
CSN
mrom_lp_<w>x<b>m<y>b<ba>
DOUT [b-1:0]
OEN
A [m-1:0]
NOTES:
1. Words (w) is the number of words in MROM_LP.
2. Bpw (b) is the number of bits per word.
3. Ymux (y) is one of the column mux types.
5. m = log2w
4. Banks (ba) is the number of banks.
STDM110 5-45 Samsung ASIC
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Parameter Description
MROM_LP is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bits per word(b), Column
mux(y) and Number of banks(ba).
Pin Descriptions
Pin Capacitance (Unit = SL)
NOTE: Each pin’s capacitance is exactly same regardless of available mux types for same bank.
Parameters Ymux = 8 Ymux = 16 Ymux = 32
Words (w) ba = 1 Min 64 128 256
Max 2048 4096 8192
Step 32 64 128
ba = 2 Min 128 256 512
Max 4096 8192 16384
Step 64 128 256
Bpw (b) Min 2 2 2
Max 128 64 32
Step 1 1 1
Name I/O Description
CK Clock Clock input. CSN and A[] are latched into the ROM on the rising edge of CK.
If CSN is low on the rising edge of CK, the ROM is in read mode.
CSN Chip
Enable Chip enable input. The chip enable is active-low and is latched into the ROM on
the rising edge of CK. When CSN is low, the ROM is enabled for reading. When
CSN is high, the ROM goes to the standby mode and is disabled for reading.
DOUT remains previous data output.
OEN Data
Output
Enable
Data output enable input. The data output enable is asynchronously operated
regardless of any inputs. When OEN is high, DOUT is disabled and goes to
high-impedance state.
A [ ] Address Address input bus. The address is latched into the ROM on the rising edge of CK.
DOUT [ ] Data
Output Data output bus. Data output is valid after the rising edge of CK while the ROM is
in read mode.
CK CSN OEN A DOUT
ba = 1 4.346 4.741 3.257 7.865 8.308
ba = 2 5.190 5.288 3.405 4.614 8.463
Samsung ASIC 5-46 STDM110
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Block Diagrams
MROM_LP has 2 different physical architectures due to the word depth. For a specific configuration, only
one of these architectures is generated from MROM_LP compiler. Power is consumed by the bank that is
selected by the address whereas the other bank will be in idle mode.
Application Notes
1. Permitting over-the-cell routing
In chip-level layout, over-the-cell routing in MROM_LP is permitted for only Metal-5 layer.
2. Incoming power bus should be adjusted to guarantee NOT more than 10% voltage drop at typical-case
current levels.
3. Power stripe should be tapped from both sides of MROM_LP.
4. Power reduction during standby mode.
The standby power is measured on the condition that only CSN is in disable mode and other signals are
in operation mode. If any of signals are activated while in standby mode, the power will be consumed
because the input switching activities are occurred by the signal transition. Therefore, to reduce
unnecessary power consumption, you should keep stable for all signals while standby mode.
<1-bank>
ROM Core
Word-line Decoder
X-Dec
Word-line Decoder
ROM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Output Driver Address
Buffers Output Driver
<2-bank>
ROM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
ROM Core
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
Y-Dec &
Sense Amp. Control Block Y-Dec &
Sense Amp.
ROM Core
Word-line
Decoder
X-Dec
Word-line
Decoder
ROM Core
Output Driver Address
Buffers Output Driver
STDM110 5-47 Samsung ASIC
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Characteristics
Definition for AC Timing (ns)
Symbol Description Symbol Description
tcyc Clock cycle time tch CSN hold time from CK rise
tckl Clock pulse width low tacc Data access time
tckh Clock pulse width high tda De-access time
tas Address setup time tdz DOUT drive to high-Z time
tah Address hold time tzd DOUT high-Z to drive time
tcs CSN setup time tod OEN to valid output
Definition for Power Consumption (µW/MHz)
Power_read The dynamic average power consumption while in a read cycle
Power_standby The standby power consumption while CSN is high
Definition for Area (µm)
Width The physical width in X-direction
Height The physical height in Y-direction
Samsung ASIC 5-48 STDM110
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Reference Table
* For Ymux=8 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 512 1024 1024 2048 1536 3072 2048 4096
bpw 32 32 64 64 96 96 128 128
ba 12 1 212 1 2
Timing (ns)
tcyc 7.73 8.05 11.16 11.55 14.87 15.33 18.85 19.39
tckl 2.92 2.92 3.60 3.60 4.22 4.22 4.77 4.77
tckh 3.32 3.64 4.26 4.65 5.27 5.73 6.35 6.89
tas 0.10 1.83 0.10 1.93 0.10 2.02 0.10 2.12
tah 0.88 1.19 0.88 1.27 0.89 1.35 0.89 1.42
tcs 1.16 1.73 1.16 1.83 1.16 1.92 1.16 2.02
tch 0.79 1.11 0.79 1.18 0.79 1.26 0.79 1.33
tacc 5.04 5.46 5.95 6.46 7.07 7.68 8.41 9.11
tda 4.38 4.71 5.49 5.91 6.69 7.19 7.97 8.55
tdz 0.86 0.87 0.99 0.99 1.10 1.11 1.21 1.22
tzd 1.03 1.04 1.15 1.15 1.25 1.26 1.35 1.36
tod 1.16 1.17 1.27 1.28 1.38 1.39 1.49 1.49
Power (µW/MHz)
Power_read 100.05 105.37 242.79 254.13 438.00 457.13 685.69 714.37
Power_standby 0.43 2.61 0.49 3.32 0.53 4.04 0.58 4.75
Area (µm)
Width 484.49 484.49 876.09 876.09 1267.42 1267.42 1658.49 1658.49
Height 275.80 529.46 419.16 816.18 562.52 1102.90 705.88 1389.62
STDM110 5-49 Samsung ASIC
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Reference Table
* For Ymux=16 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 1024 2048 2048 4096 3072 6144 4096 8192
bpw 16 16 32 32 48 48 64 64
ba 12 1 212 1 2
Timing (ns)
tcyc 7.74 8.05 11.16 11.55 14.86 15.33 18.85 19.39
tckl 2.93 2.93 3.60 3.60 4.22 4.22 4.77 4.77
tckh 3.32 3.64 4.26 4.65 5.27 5.73 6.36 6.89
tas 0.10 1.83 0.10 1.93 0.10 2.02 0.10 2.12
tah 0.88 1.19 0.89 1.27 0.89 1.35 0.89 1.42
tcs 1.16 1.73 1.16 1.83 1.16 1.92 1.16 2.02
tch 0.79 1.11 0.80 1.18 0.80 1.26 0.80 1.33
tacc 5.11 5.57 6.00 6.56 7.13 7.77 8.47 9.21
tda 4.39 4.73 5.51 5.93 6.71 7.21 7.99 8.57
tdz 0.82 0.83 0.90 0.91 0.99 0.99 1.07 1.07
tzd 0.99 1.01 1.07 1.08 1.15 1.16 1.22 1.22
tod 1.12 1.13 1.20 1.21 1.28 1.28 1.35 1.35
Power (µW/MHz)
Power_read 67.22 71.75 153.86 162.74 267.43 281.59 407.93 428.30
Power_standby 0.43 2.60 0.47 3.31 0.51 4.02 0.55 4.73
Area (µm)
Width 484.20 484.20 876.02 876.02 1267.42 1267.42 1658.42 1658.42
Height 275.80 529.46 419.16 816.18 562.52 1102.90 705.88 1389.62
Samsung ASIC 5-50 STDM110
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Reference Table
* For Ymux=32 (Typical process, 2.5V, 25°C, Output load = 10SL, Input slope = 0.2 ns, SA=0.5)
NOTE: Standby power is measured on the condition that other signals are in normal operation while CSN is in
disable mode.
Parameters
words 2048 4096 4096 8192 6144 12288 8192 16384
bpw 8 8 16 16 24 24 32 32
ba 12 1 212 1 2
Timing (ns)
tcyc 7.75 8.07 11.16 11.55 14.86 15.32 18.86 19.39
tckl 2.93 2.93 3.60 3.60 4.22 4.22 4.78 4.78
tckh 3.33 3.64 4.26 4.65 5.27 5.73 6.36 6.89
tas 0.10 1.83 0.10 1.93 0.10 2.02 0.10 2.12
tah 0.88 1.19 0.88 1.27 0.89 1.35 0.89 1.42
tcs 1.16 1.73 1.16 1.83 1.16 1.92 1.16 2.02
tch 0.79 1.11 0.79 1.18 0.79 1.26 0.79 1.33
tacc 5.22 5.76 6.11 6.74 7.23 7.96 8.57 9.40
tda 4.41 4.76 5.53 5.95 6.73 7.22 8.01 8.58
tdz 0.80 0.80 0.86 0.87 0.93 0.93 0.99 1.00
tzd 0.98 0.98 1.04 1.04 1.10 1.10 1.15 1.16
tod 1.10 1.11 1.17 1.17 1.23 1.23 1.28 1.29
Power (µW/MHz)
Power_read 52.22 56.38 110.96 118.68 183.81 195.56 270.79 287.03
Power_standby 0.42 2.62 0.46 3.37 0.50 4.13 0.53 4.91
Area (µm)
Width 483.61 483.61 875.85 875.85 1267.42 1267.42 1658.32 1658.32
Height 275.80 529.46 419.16 816.18 562.52 1102.90 705.88 1389.62
STDM110 5-51 Samsung ASIC
MROM_LP
Low-Power Synchronous Metal Programmable ROM
Timing Diagrams
Read Cycle
Read Cycle with CSN Controlled
OEN Controlled Output Enable
NOTE: “don’t care” means the condition that these pins are in normal operation mode
tas
A
tah
(CSN, OEN = low)
tacc
tda
DOUT
tcyc
CK
tckl tckh
A0 A2
Valid M[A0] M[A1] M[A2]
A1
(OEN = low)
tch
tcs
CSN
DOUT
A1 A2
A0
A[ ]
tas tah
M[A1]
tacc
tda
CK tckl tckh
tcyc
M[A0]
(CK, A = don’t care, CSN = low)
tod tdz
Hi-Z VALID
OEN
DOUT Hi-Z
tzd
Samsung ASIC 5-52 STDM110
Compiled Datapath Macrocells COMPILED MACROCELLS
COMPILED DATAPATH MACROCELLS
Datapath macro cell is a set of n-bit data operators that enables more efficient datapath module design and
implementation. Compiled datapath macro cell creates area-, speed- and power-optimized adders,
subtracters, barrel shifters, and multipliers based on the user specified parameters. It creates a function mod-
el, a timing information for simulation, and a verified hard macro layout.
The followings are the summary of main features of compiled datapath macro cells:
ADVANCED DESIGN TECHNIQUE
All of STDM110 compiled datapath macro cells adopt very advanced design techniques to get optimized per-
formances on the given parameters. Some of those design techniques are as follows:
— Hierarchical double carry select scheme to reduce carry-chain delay
— Transmission gate multiplexing for data shifting
— Allowing pipeline insertion in multiplication
— Primitive standard cell compatible leaf cell layout
— Allowing over-the-cell routing
— Dense datapath module layout generation with topological regularity.
FLEXIBLE DATAPATH MACROCELL DESIGN FLOW
The implementation of datapath module is one of the most critical and important elements in the design of
high performance systems; DSPs, multimedia, graphics, microprocessors and so on. In these systems, the
datapath modules are used much more than other designs and at the same time, datapath module affects
the overall design performances.
The macrocell generation flow is tightly integrated into Apollo, Avant! which is used as a main tool at a full
chip layout step. By supporting an easy-to-use ASIC environment, achieving full custom-like density, perform-
ance, ASIC designers can expect improving productivity. In the design of datapath macro cell, the optimal
module placement of leafcell is a key point to take advantage of inherent regularity in datapaths. An optimal
datapath module placement can maximize density, minimize speed, bus line skew, power consumption and
turn-around time in ASIC design.
The design environment has been developed to support datapath macro cells as shown in below. This flow
is tightly integrated from Verilog, Cadence, to Apollo, Avant!. With the pre-defined leafcell information and
given parameters, the schematic generator gives a Verilog structural netlist of datapath cell and the place-
ment information of used leafcell instances. It enables the mapping of regularity from a logic design into a
standard cell place-and-rout tool. You can get area- and performance-optimized layouts of datapath macro
cells.
Figure 5-3 Datapath Instance Generatin Flow
Leafcell
Parameter Instance netilst Instance
Place
Schematic Apollo
COMPILED MACROCELLS Compiled Macrocell Selection Guide
STDM110 5-53 Samsung ASIC
COMPILED MACROCELL SELECTION GUIDE
Type Macrocell Description
Datapath ADDER Low-power/high-speed 4-to-64 bits addition/subtraction
- Double-carry select algorithm
- 2's complement overflow
BS Low-power/high-speed 4-to-64 bits barrel shifter
- Bi-directional shift and rotation
- Logical or arithmetic shift
- External filler data is available
MPY Low-power/high-speed 6-to-64 bits modified Booth Multiplier
- 2's complement multiplication
- 1-stage pipeline insertion is available
Samsung ASIC 5-54 STDM110
ADDER
Adder/Subtracter
Function Description
The ADDER is an
n
-bit carry-select adder and subtracter which is provided as a compiler. The ADDER is
intended for use in high-speed and low power applications. It essentially adopts the double carry-select
scheme which has hierarchically doubled carry-select groups of bits to allow the high-speed of
addition/subtractionoperation. And in addition, the inside of eachgroupisdesigned by a partial group-bypass
scheme so as to acquire more high-speed. It performs a 2’s complement addition/subtraction or
unsigned-magnitude addition. The overflow flag shows the occurrence of overflow while adding two positive
or two negative numbers and it should be ignored while doing unsigned-magnitude operations.
Function Table
Parameter Description
ADDER is the compiler that automatically generates symbol, netlist, timing model, power model and layout
according to the following parameters.
output Function
SOUT AIN + BIN + CIN (addition)
AIN + ~BIN + CIN (subtraction)
OVF (~SOUT [bits–1]) • (AIN [bits–1] • BIN [bits–1]) + (SOUT [bits–1]) • (~AIN [bits–1]) •(~ BIN [bits–1])
Parameter Name Description Range
bits Number of bits for the input data bus 4 to 64
sub 0: addition only; 1: addition/subtraction 0/1
ovf Overflow flag for signed operation 0/1
drv output drive strength 1/2
Logic Symbol Features
• Asynchronous operation
• 4 to 64 bit Adder/Subtracter
• High-speed / low-power operation
• 2’s complement or unsigned-magnitude operation
• 2’s complement overflow flag available
• Sophisticated carry-select and group-bypass
scheme
• Two output drive-strengths available
AIN [bits–1:0] SOUT [bits–1:0]
BIN [bits–1:0]
CIN
SUB (optional)
COUT
OVF (optional)
addsub_<bits>_s<sub>_o<ovf>_d<drv>
STDM110 5-55 Samsung ASIC
ADDER
Adder/Subtracter
Pin Description
Pin Capacitance [Unit: pF]
Block Diagram
Name Type Description
AIN [ ]
Input
Augend in addition, Minuend in subtraction
BIN [ ] Addend in addition, Subtrahend in subtraction
CIN Carry-in in addition/subtraction
It must be kept with the ‘HIGH’ state in 2’s complement subtraction.
SUB Addition/subtraction flag (optional when the parameter sub = 1)
SOUT[ ]
output
The result of addition/subtraction
COUT Carry-out in addition/subtraction
OVF The overflow/underflow of addition/subtraction
(optional when the parameter ovf = 1)
Name Case Value
AIN[ ] all 0.0127
BIN[ ] sub=0
sub=1 0.0137
0.0088
CIN all 0.0176
SUB sub=1 0.0107
ADD/SUB
Selection Carry
generation
P/G
Generation Carry
Selection SUM
BIN[ ]
SUB
(optional)
AIN[ ]
COUT
SOUT[ ]
CIN
Overflow
OVF(optional)
Generation
Block Block Block Block Block
Block
Samsung ASIC 5-56 STDM110
ADDER
Adder/Subtracter
Timing Diagram
Timing Type Definition
Timing Type Definition
tPHLas/tPLHas Propagation delay from AIN[ ] to SOUT[ ]
tPHLbs/tPLHbs Propagation delay from BIN[ ] to SOUT[ ]
ttPHLcs/tPLHcs Propagation delay from CIN to SOUT [ ]
tPHLss/tPLHss Propagation delay from SUB to SOUT [ ]
tPHLac/tPLHac Propagation delay from AIN[ ] to COUT
tPHLbc/tPLHbc Propagation delay from BIN[ ] to COUT
tPHLcc/tPLHcc Propagation delay from CIN to COUT
tPHLsc/tPLHsc Propagation delay from SUB to COUT
tPHLao/tPLHao Propagation delay from AIN[ ] to OVF
tPHLbo/tPLHbo Propagation delay from BIN[ ] to OVF
tPHLco/tPLHco Propagation delay from CIN to OVF
tPHLso/tPLHso Propagation delay from SUB to OVF
tPDAas De-access time from AIN[ ] to SOUT[ ]
tPDAbs De-access time from BIN[ ] to SOUT[ ]
tPDAcs De-access time from CIN to SOUT[ ]
tPDAss De-access time from SUB to SOUT[ ]
tPLHas
tPHLas
SOUT[ ]
AIN[ ]
BIN[ ]
CIN
SUB
COUT
OVF
tPDAas
tPLHbs
tPHLbs
tPDAbs
tPLHcs
tPHLcs
tPDAcs
tPLHss
tPHLss
tPDAss
tPLHac
tPHLac tPLHbc
tPHLbc tPLHcc
tPHLcc tPLHsc
tPHLsc
tPLHao
tPHLao tPLHbo
tPHLbo tPLHco
tPHLco tPLHso
tPHLso
STDM110 5-57 Samsung ASIC
ADDER
Adder/Subtracter
Characteristic Reference Table
1) Timing Characteristics [Unit: ns]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Symbol Description Unit Symbol Description Unit
B Number of Bits - S Input Slope ns
VDD Power Supply Voltage V SL Standard Load -
CLOutput Load SL SA Input Switching Activity -
Type 8 24364864
Case: sub=0, ovf=1, drv=1
tPHLac/tPLHac 0.94 1.00 1.29 1.42 1.51 1.63 1.68 1.75 1.84 1.79
tPHLbc/tPLHbc 0.92 0.99 1.27 1.39 1.48 1.60 1.65 1.73 1.82 1.77
tPHLcc/tPLHcc 0.36 0.36 0.59 0.54 0.76 0.68 0.94 0.82 1.17 1.01
tPHLao/tPLHao 1.13 1.08 1.55 1.53 1.77 1.74 1.90 1.86 1.94 1.86
tPHLbo/tPLHbo 1.11 1.06 1.53 1.50 1.75 1.72 1.87 1.84 1.92 1.84
tPHLco/tPLHco 0.46 0.51 0.70 0.83 0.85 1.00 0.98 1.12 1.12 1.19
tPHLas/tPLHas 1.18 1.07 1.61 1.50 1.82 1.71 1.95 1.82 1.98 1.82
tPHLbs/tPLHbs 1.17 1.05 1.58 1.48 1.79 1.69 1.92 1.80 1.96 1.79
tPHLcs/tPLHcs 0.51 0.47 0.75 0.80 0.90 0.97 1.03 1.09 1.16 1.15
tPDAas 0.41 0.41 0.41 0.41 0.41
tPDAbs 0.39 0.39 0.39 0.39 0.39
tPDAcs 0.28 0.28 0.28 0.28 0.28
Case: sub=1, ovf=1, drv=1
tPHLac/tPLHac 0.98 0.94 1.23 1.38 1.41 1.60 1.59 1.72 1.84 1.75
tPHLbc/tPLHbc 1.14 1.06 1.48 1.51 1.70 1.73 1.87 1.85 2.03 1.87
tPHLcc/tPLHcc 0.36 0.36 0.59 0.54 0.76 0.68 0.94 0.82 1.17 1.00
tPHLsc/tPLHsc 0.87 1.09 0.87 1.52 0.86 1.74 0.86 1.86 0.86 1.89
tPHLao/tPLHao 1.06 1.08 1.51 1.48 1.74 1.68 1.87 1.80 1.89 1.81
tPHLbo/tPLHbo 1.19 1.28 1.65 1.72 1.87 1.93 2.00 2.05 2.02 2.05
tPHLco/tPLHco 0.46 0.51 0.70 0.83 0.85 1.01 0.98 1.12 1.12 1.19
tPHLso/tPLHso 0.95 1.24 0.97 1.69 0.98 1.92 1.00 2.06 1.02 2.09
tPHLas/tPLHas 1.12 1.07 1.57 1.46 1.79 1.65 1.92 1.76 1.94 1.77
tPHLbs/tPLHbs 1.25 1.27 1.70 1.69 1.92 1.90 2.05 2.01 2.06 2.00
tPHLcs/tPLHcs 0.51 0.48 0.75 0.80 0.90 0.97 1.03 1.09 1.16 1.15
tPHLss/tPLHss 1.26 1.21 1.74 1.66 1.98 1.89 2.12 2.03 2.14 2.08
tPDAas 0.37 0.37 0.37 0.37 0.37
tPDAbs 0.51 0.51 0.51 0.51 0.51
tPDAcs 0.28 0.28 0.28 0.28 0.28
tPDAss 0.62 0.62 0.61 0.61 0.61
Samsung ASIC 5-58 STDM110
ADDER
Adder/Subtracter
2) Power Characteristics [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5)
3) Size Characteristics [Unit: µm]
Case 8 24 36 48 64
sub=0 ovf=0 drv=1 6.83 20.40 30.58 40.76 54.33
drv=2 7.18 22.27 33.59 44.91 60.00
ovf=1 drv=1 6.99 20.56 30.73 40.91 54.48
drv=2 7.35 22.46 33.79 45.12 60.23
sub=1 ovf=0 drv=1 9.10 26.55 39.64 52.73 70.18
drv=2 10.61 29.59 43.83 58.07 77.05
ovf=1 drv=1 9.24 26.68 39.76 52.83 70.27
drv=2 10.80 29.78 44.02 58.26 77.24
Type Case 8 24 36 48 64
Width
sub=0 ovf=0
sub=0 ovf=1 45.92
47.26 49.75
49.85 51.04
50.73 50.96
50.68 48.76
49.20
sub=1 ovf=0
sub=1 ovf=1 52.92
54.26 56.75
56.85 58.04
57.73 57.96
57.68 55.76
56.20
Height all 88.00 264.00 396.00 528.00 704.00
Samsung ASIC 5-59 STDM110
ADDER
Adder/Subtracter
Characteristic Equation Table
1) Timing Equations [Unit: ns]
Case=ovf0sub0 (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLac all (2.18e-01*S+9.63e-01*SL*5.37e-03+2.71e-02*B+6.26e-01+(-1.54e-04)*B*B)
tPHLbc drv=1 (2.00e-01*S+9.64e-01*SL*5.37e-03+2.67e-02*B+6.13e-01+(-1.50e-04)*B*B)
drv=2 (2.00e-01*S+9.66e-01*SL*5.37e-03+2.67e-02*B+6.12e-01+(-1.49e-04)*B*B)
tPHLcc drv=1 (1.59e-01*S+9.63e-01*SL*5.37e-03+1.44e-02*B+1.47e-01+3.76e-04*S*B)
drv=2 (1.59e-01*S+9.62e-01*SL*5.37e-03+1.44e-02*B+1.45e-01+3.79e-04*S*B)
tPHLas drv=1 ((-1.34e-01)*S+2.00*SL*5.37e-03+3.68e-02*B+7.86e-01+(-3.14e-04)*B*B)
drv=2 ((-1.35e-01)*S+1.04*SL*5.37e-03+3.65e-02*B+8.10e-01+(-3.10e-04)*B*B)
tPHLbs drv=1 ((-1.21e-01)*S+2.00*SL*5.37e-03+3.56e-02*B+7.79e-01+(-3.00e-04)*B*B)
drv=2 ((-1.20e-01)*S+1.03*SL*5.37e-03+3.56e-02*B+7.99e-01+(-2.99e-04)*B*B)
tPHLcs drv=1 (1.51e-02*S+2.00*SL*5.37e-03+1.79e-02*B+2.16e-01+(-8.76e-05)*B*B)
drv=2 (1.43e-02*S+1.04*SL*5.37e-03+1.21e-02*B+3.06e-01+(-1.94e-04)*SL*5.37e-03*B)
tPLHac all ((-1.34e-01)*S+1.24*SL*5.37e-03+3.65e-02*B+6.81e-01+(-3.17e-04)*B*B)
tPLHbc drv=1 ((-1.21e-01)*S+1.24*SL*5.37e-03+3.53e-02*B+6.75e-01+(-3.03e-04)*B*B)
drv=2 ((-1.20e-01)*S+1.23*SL*5.37e-03+3.53e-02*B+6.73e-01+(-3.03e-04)*B*B)
tPLHcc all (1.47e-02*S+1.24*SL*5.37e-03+1.91e-02*B+9.55e-02+(-1.11e-04)*B*B)
tPLHas drv=1 (2.18e-01*S+1.96*SL*5.37e-03+3.82e-02*B+5.95e-01+(-3.41e-04)*B*B)
drv=2 (2.18e-01*S+9.63e-01*SL*5.37e-03+3.80e-02*B+6.16e-01+(-3.37e-04)*B*B)
tPLHbs drv=1 (2.00e-01*S+1.96*SL*5.37e-03+3.78e-02*B+5.83e-01+(-3.37e-04)*B*B)
drv=2 (1.99e-01*S+9.65e-01*SL*5.37e-03+3.75e-02*B+6.03e-01+(-3.31e-04)*B*B)
tPLHcs drv=1 (1.70e-01*S+1.96*SL*5.37e-03+2.64e-02*B+1.05e-01+(-1.97e-04)*B*B)
drv=2 (1.70e-01*S+9.63e-01*SL*5.37e-03+2.59e-02*B+1.26e-01+(-1.90e-04)*B*B)
tPDAas all ((-1.44e-01)*S+2.00*SL*5.37e-03+2.08e-06*B+3.35e-01)
tPDAbs all ((-1.31e-01)*S+2.00*SL*5.37e-03+(-1.21e-05)*B+3.11e-01)
tPDAcs drv=1 ((-1.17e-02)*S+2.03*SL*5.37e-03+(-1.09e-04)*B+1.73e-01+1.14e-06*B*B)
drv=2 ((-8.15e-03)*S+1.04*SL*5.37e-03+(-1.56e-04)*B+2.10e-01+1.70e-06*B*B)
Samsung ASIC 5-60 STDM110
ADDER
Adder/Subtracter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=ovf0sub1 (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLac all (2.53e-01*S+9.09e-01*SL*5.37e-03+1.51e-02*B+7.53e-01+1.65e-03*SL*5.37e-03*B)
tPHLbc drv=1 (2.36e-01*S+9.64e-01*SL*5.37e-03+2.66e-02*B+8.24e-01+(-1.50e-04)*B*B)
drv=2 (2.37e-01*S+9.65e-01*SL*5.37e-03+2.66e-02*B+8.21e-01+(-1.50e-04)*B*B)
tPHLcc drv=1 (1.60e-01*S+9.61e-01*SL*5.37e-03+1.44e-02*B+1.47e-01+3.50e-04*S*B)
drv=2 (1.60e-01*S+9.62e-01*SL*5.37e-03+1.44e-02*B+1.45e-01+3.64e-04*S*B)
tPHLsc drv=1 (1.02e-01*S+9.01e-01*SL*5.37e-03+(-4.40e-04)*B+7.95e-01+(-2.56e-03)*S*SL*5.37e-03+5.
39e-06*S*B+2.02e-03*SL*5.37e-03*B)
drv=2 (1.01e-01*S+9.02e-01*SL*5.37e-03+(-4.43e-04)*B+8.03e-01+1.98e-03*SL*5.37e-03*B)
tPHLas drv=1 ((-4.02e-02)*S+2.00*SL*5.37e-03+3.95e-02*B+6.80e-01+(-3.46e-04)*B*B)
drv=2 ((-4.09e-02)*S+1.04*SL*5.37e-03+3.93e-02*B+7.04e-01+(-3.42e-04)*B*B)
tPHLbs drv=1 ((-8.91e-02)*S+2.00*SL*5.37e-03+3.93e-02*B+8.23e-01+(-3.45e-04)*B*B)
drv=2 ((-8.98e-02)*S+1.04*SL*5.37e-03+3.91e-02*B+8.47e-01+(-3.42e-04)*B*B)
tPHLcs drv=1 (1.52e-02*S+2.00*SL*5.37e-03+1.79e-02*B+2.16e-01+(-8.77e-05)*B*B)
drv=2 (1.05e-02*S+1.04*SL*5.37e-03+1.19e-02*B+3.09e-01+7.45e-04*S*SL*5.37e-03+1.12e-04*S
*B+(-1.75e-04)*SL*5.37e-03*B)
tPHLss drv=1 ((-4.80e-02)*S+1.88*SL*5.37e-03+4.14e-02*B+8.17e-01+(-3.57e-04)*B*B)
drv=2 ((-1.85e-02)*S+9.89e-01*SL*5.37e-03+4.25e-02*B+7.96e-01+(-3.71e-04)*B*B)
tPLHac all ((-4.00e-02)*S+1.24*SL*5.37e-03+3.91e-02*B+5.79e-01+(-3.49e-04)*B*B)
tPLHbc all ((-8.89e-02)*S+1.24*SL*5.37e-03+3.91e-02*B+7.17e-01+(-3.48e-04)*B*B)
tPLHcc all (1.48e-02*S+1.23*SL*5.37e-03+1.90e-02*B+9.72e-02+(-1.11e-04)*B*B)
tPLHsc all ((-4.30e-03)*S+1.24*SL*5.37e-03+3.83e-02*B+7.26e-01+(-3.39e-04)*B*B)
tPLHas drv=1 (2.53e-01*S+1.96*SL*5.37e-03+3.41e-02*B+6.16e-01+(-2.97e-04)*B*B)
drv=2 (2.52e-01*S+9.63e-01*SL*5.37e-03+3.39e-02*B+6.38e-01+(-2.92e-04)*B*B)
tPLHbs drv=1 (2.36e-01*S+1.96*SL*5.37e-03+3.77e-02*B+7.93e-01+(-3.36e-04)*B*B)
drv=2 (2.37e-01*S+9.65e-01*SL*5.37e-03+3.74e-02*B+8.13e-01+(-3.31e-04)*B*B)
tPLHcs drv=1 (1.70e-01*S+1.96*SL*5.37e-03+2.63e-02*B+1.06e-01+(-1.97e-04)*B*B)
drv=2 (1.70e-01*S+9.63e-01*SL*5.37e-03+2.60e-02*B+1.26e-01+(-1.91e-04)*B*B)
tPLHss drv=1 ((-3.63e-03)*S+1.97*SL*5.37e-03+3.88e-02*B+7.67e-01+(-3.24e-04)*B*B)
drv=2 ((-3.73e-03)*S+9.68e-01*SL*5.37e-03+3.89e-02*B+7.85e-01+(-3.25e-04)*B*B)
tPDAas all ((-7.05e-02)*S+2.00*SL*5.37e-03+(-5.14e-06)*B+2.73e-01)
tPDAbs all ((-8.79e-02)*S+2.00*SL*5.37e-03+(-1.62e-05)*B+4.19e-01)
tPDAcs drv=1 ((-1.26e-02)*S+2.03*SL*5.37e-03+(-1.48e-04)*B+1.74e-01+1.57e-06*B*B)
drv=2 ((-8.08e-03)*S+1.04*SL*5.37e-03+(-1.58e-04)*B+2.10e-01+1.73e-06*B*B)
tPDAss drv=1 ((-3.97e-02)*S+1.23*SL*5.37e-03+(-2.86e-03)*B+5.94e-01+(-2.29e-01)*S*SL*5.37e-03+4.06
e-03*S*B+1.96e-02*SL*5.37e-03*B)
drv=2 (1.28e-02*S+7.38e-01*SL*5.37e-03+(-1.16e-03)*B+5.63e-01+(-7.78e-02)*S*SL*5.37e-03+2.
44e-03*S*B+8.05e-03*SL*5.37e-03*B)
Samsung ASIC 5-61 STDM110
ADDER
Adder/Subtracter
1) Timing Equations [Unit: ns] (Cont.)
Case=ovf1sub0 (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLac drv=1 (2.18e-01*S+9.54e-01*SL*5.37e-03+2.67e-02*B+6.41e-01+(-1.48e-04)*B*B)
drv=2 (2.18e-01*S+9.52e-01*SL*5.37e-03+2.68e-02*B+6.41e-01+(-1.47e-04)*B*B)
tPHLbc all (2.00e-01*S+9.54e-01*SL*5.37e-03+2.63e-02*B+6.28e-01+(-1.43e-04)*B*B)
tPHLcc all (1.59e-01*S+9.55e-01*SL*5.37e-03+1.45e-02*B+1.55e-01+3.82e-04*S*B)
tPHLao drv=1 ((-1.34e-01)*S+1.85*SL*5.37e-03+3.67e-02*B+7.80e-01+(-3.09e-04)*B*B)
drv=2 ((-1.34e-01)*S+9.37e-01*SL*5.37e-03+3.65e-02*B+8.03e-01+(-3.05e-04)*B*B)
tPHLbo drv=1 ((-1.21e-01)*S+1.84*SL*5.37e-03+3.55e-02*B+7.74e-01+(-2.94e-04)*B*B)
drv=2 ((-1.20e-01)*S+9.37e-01*SL*5.37e-03+3.54e-02*B+7.95e-01+(-2.92e-04)*B*B)
tPHLco drv=1 (1.52e-02*S+1.84*SL*5.37e-03+1.76e-02*B+2.19e-01+(-8.06e-05)*B*B)
drv=2 (1.36e-02*S+9.35e-01*SL*5.37e-03+1.73e-02*B+2.43e-01+(-7.63e-05)*B*B)
tPHLas drv=1 ((-1.34e-01)*S+2.01*SL*5.37e-03+3.62e-02*B+8.34e-01+(-3.05e-04)*B*B)
drv=2 ((-1.35e-01)*S+1.05*SL*5.37e-03+3.60e-02*B+8.57e-01+(-3.03e-04)*B*B)
tPHLbs drv=1 ((-1.21e-01)*S+2.01*SL*5.37e-03+3.50e-02*B+8.26e-01+(-2.91e-04)*B*B)
drv=2 ((-1.20e-01)*S+1.05*SL*5.37e-03+3.51e-02*B+8.46e-01+(-2.92e-04)*B*B)
tPHLcs drv=1 (1.50e-02*S+2.01*SL*5.37e-03+1.75e-02*B+2.61e-01+(-8.13e-05)*B*B)
drv=2 (1.44e-02*S+1.04*SL*5.37e-03+1.73e-02*B+2.85e-01+(-7.81e-05)*B*B)
tPLHac drv=1 ((-1.34e-01)*S+1.22*SL*5.37e-03+3.54e-02*B+6.97e-01+(-2.96e-04)*B*B)
drv=2 ((-1.35e-01)*S+1.21*SL*5.37e-03+3.53e-02*B+6.97e-01+(-2.94e-04)*B*B)
tPLHbc drv=1 ((-1.21e-01)*S+1.22*SL*5.37e-03+3.43e-02*B+6.90e-01+(-2.81e-04)*B*B)
drv=2 ((-1.20e-01)*S+1.21*SL*5.37e-03+3.43e-02*B+6.87e-01+(-2.82e-04)*B*B)
tPLHcc all (1.47e-02*S+1.18*SL*5.37e-03+1.16e-02*B+1.96e-01+1.06e-03*SL*5.37e-03*B)
tPLHao drv=1 (2.20e-01*S+2.54*SL*5.37e-03+3.88e-02*B+6.13e-01+(-3.46e-04)*B*B)
drv=2 (2.19e-01*S+1.23*SL*5.37e-03+3.87e-02*B+6.34e-01+(-3.43e-04)*B*B)
tPLHbo drv=1 (2.00e-01*S+2.54*SL*5.37e-03+3.84e-02*B+6.02e-01+(-3.42e-04)*B*B)
drv=2 (2.00e-01*S+1.23*SL*5.37e-03+3.83e-02*B+6.23e-01+(-3.39e-04)*B*B)
tPLHco drv=1 (1.70e-01*S+2.54*SL*5.37e-03+2.66e-02*B+1.35e-01+(-2.00e-04)*B*B)
drv=2 (1.70e-01*S+1.23*SL*5.37e-03+2.65e-02*B+1.55e-01+(-1.97e-04)*B*B)
tPLHas drv=1 (2.18e-01*S+1.98*SL*5.37e-03+3.80e-02*B+6.36e-01+(-3.42e-04)*B*B)
drv=2 (2.18e-01*S+9.80e-01*SL*5.37e-03+3.77e-02*B+6.60e-01+(-3.36e-04)*B*B)
tPLHbs drv=1 (2.00e-01*S+1.98*SL*5.37e-03+3.77e-02*B+6.23e-01+(-3.38e-04)*B*B)
drv=2 (2.00e-01*S+9.83e-01*SL*5.37e-03+3.72e-02*B+6.47e-01+(-3.30e-04)*B*B)
tPLHcs drv=1 (1.70e-01*S+1.98*SL*5.37e-03+2.68e-02*B+1.32e-01+(-2.06e-04)*B*B)
drv=2 (1.69e-01*S+9.83e-01*SL*5.37e-03+2.66e-02*B+1.54e-01+(-2.01e-04)*B*B)
tPDAas all ((-1.44e-01)*S+2.00*SL*5.37e-03+(-2.34e-06)*B+3.35e-01+(-8.99e-04)*S*SL*5.37e-03)
tPDAbs all ((-1.31e-01)*S+2.00*SL*5.37e-03+(-1.38e-05)*B+3.11e-01)
tPDAcs drv=1 ((-1.19e-02)*S+2.03*SL*5.37e-03+(-3.11e-05)*B+1.72e-01)
drv=2 ((-8.20e-03)*S+1.04*SL*5.37e-03+(-1.49e-04)*B+2.10e-01+1.66e-06*B*B)
Samsung ASIC 5-62 STDM110
ADDER
Adder/Subtracter
1) Timing Equations [Unit: ns] (Cont.)
Case=ovf1sub1 (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLac all (2.52e-01*S+8.99e-01*SL*5.37e-03+1.51e-02*B+7.64e-01+1.62e-03*SL*5.37e-03*B)
tPHLbc drv=1 (2.36e-01*S+9.54e-01*SL*5.37e-03+2.63e-02*B+8.38e-01+(-1.45e-04)*B*B)
drv=2 (2.37e-01*S+9.54e-01*SL*5.37e-03+2.63e-02*B+8.36e-01+(-1.44e-04)*B*B)
tPHLcc drv=1 (1.59e-01*S+9.52e-01*SL*5.37e-03+1.45e-02*B+1.56e-01+3.59e-04*S*B)
drv=2 (1.60e-01*S+9.53e-01*SL*5.37e-03+1.46e-02*B+1.54e-01+3.69e-04*S*B)
tPHLsc drv=1 (1.01e-01*S+8.91e-01*SL*5.37e-03+(-3.35e-04)*B+8.05e-01+1.99e-03*SL*5.37e-03*B)
drv=2 (1.00e-01*S+8.93e-01*SL*5.37e-03+(-2.98e-04)*B+8.12e-01+(-3.61e-04)*S*SL*5.37e-03+3.
38e-05*S*B+1.88e-03*SL*5.37e-03*B)
tPHLao drv=1 ((-4.06e-02)*S+1.85*SL*5.37e-03+3.94e-02*B+6.74e-01+(-3.41e-04)*B*B)
drv=2 ((-4.02e-02)*S+9.38e-01*SL*5.37e-03+3.91e-02*B+6.97e-01+(-3.36e-04)*B*B)
tPHLbo drv=1 ((-8.93e-02)*S+1.85*SL*5.37e-03+3.92e-02*B+8.19e-01+(-3.40e-04)*B*B)
drv=2 ((-8.88e-02)*S+9.39e-01*SL*5.37e-03+3.91e-02*B+8.40e-01+(-3.37e-04)*B*B)
tPHLco drv=1 (1.45e-02*S+1.84*SL*5.37e-03+1.76e-02*B+2.18e-01+(-8.06e-05)*B*B)
drv=2 (1.41e-02*S+9.35e-01*SL*5.37e-03+1.74e-02*B+2.40e-01+(-7.71e-05)*B*B)
tPHLso drv=1 (9.75e-02*S+1.80*SL*5.37e-03+1.14e-03*B+8.19e-01+(-2.42e-03)*S*SL*5.37e-03+2.62e-05
*S*B+2.74e-03*SL*5.37e-03*B)
drv=2 (9.85e-02*S+8.96e-01*SL*5.37e-03+8.59e-04*B+8.65e-01+(-4.56e-03)*S*SL*5.37e-03+7.22
e-05*S*B+3.00e-03*SL*5.37e-03*B)
tPHLas drv=1 ((-4.05e-02)*S+2.01*SL*5.37e-03+3.89e-02*B+7.28e-01+(-3.37e-04)*B*B)
drv=2 ((-4.14e-02)*S+1.05*SL*5.37e-03+3.87e-02*B+7.51e-01+(-3.34e-04)*B*B)
tPHLbs drv=1 ((-8.90e-02)*S+2.01*SL*5.37e-03+3.88e-02*B+8.70e-01+(-3.37e-04)*B*B)
drv=2 ((-8.95e-02)*S+1.05*SL*5.37e-03+3.87e-02*B+8.93e-01+(-3.35e-04)*B*B)
tPHLcs drv=1 (1.51e-02*S+2.01*SL*5.37e-03+1.76e-02*B+2.59e-01+(-8.18e-05)*B*B)
drv=2 (1.46e-02*S+1.04*SL*5.37e-03+1.74e-02*B+2.82e-01+(-7.93e-05)*B*B)
tPHLss drv=1 ((-4.68e-02)*S+1.89*SL*5.37e-03+4.14e-02*B+8.54e-01+(-3.55e-04)*B*B)
drv=2 ((-1.76e-02)*S+1.00*SL*5.37e-03+4.23e-02*B+8.37e-01+(-3.67e-04)*B*B)
tPLHac drv=1 ((-4.03e-02)*S+1.22*SL*5.37e-03+3.81e-02*B+5.94e-01+(-3.28e-04)*B*B)
drv=2 ((-4.12e-02)*S+1.21*SL*5.37e-03+3.80e-02*B+5.94e-01+(-3.25e-04)*B*B)
tPLHbc all ((-8.90e-02)*S+1.22*SL*5.37e-03+3.81e-02*B+7.33e-01+(-3.28e-04)*B*B)
tPLHcc all (1.47e-02*S+1.18*SL*5.37e-03+1.15e-02*B+1.96e-01+9.35e-04*SL*5.37e-03*B)
tPLHsc drv=1 ((-4.00e-03)*S+1.22*SL*5.37e-03+3.72e-02*B+7.45e-01+(-3.17e-04)*B*B)
drv=2 ((-3.94e-03)*S+1.22*SL*5.37e-03+3.71e-02*B+7.45e-01+(-3.15e-04)*B*B)
tPLHao drv=1 (2.52e-01*S+2.54*SL*5.37e-03+3.48e-02*B+6.36e-01+(-3.04e-04)*B*B)
drv=2 (2.52e-01*S+1.23*SL*5.37e-03+3.47e-02*B+6.57e-01+(-3.00e-04)*B*B)
tPLHbo drv=1 (2.34e-01*S+2.54*SL*5.37e-03+3.83e-02*B+8.12e-01+(-3.42e-04)*B*B)
drv=2 (2.36e-01*S+1.23*SL*5.37e-03+3.83e-02*B+8.28e-01+(-3.41e-04)*B*B)
tPLHco drv=1 (1.69e-01*S+2.54*SL*5.37e-03+2.67e-02*B+1.34e-01+(-2.02e-04)*B*B)
drv=2 (1.70e-01*S+1.23*SL*5.37e-03+2.65e-02*B+1.55e-01+(-1.97e-04)*B*B)
tPLHso drv=1 ((-4.79e-03)*S+2.55*SL*5.37e-03+3.89e-02*B+8.10e-01+(-3.28e-04)*B*B)
drv=2 ((-4.52e-03)*S+1.23*SL*5.37e-03+3.86e-02*B+8.32e-01+(-3.23e-04)*B*B)
STDM110 5-63 Samsung ASIC
ADDER
Adder/Subtracter
1) Timing Equations [Unit: ns] (Cont.)
Case=ovf1sub1(Cont.) (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPLHas drv=1 (2.52e-01*S+1.98*SL*5.37e-03+3.40e-02*B+6.57e-01+(-2.99e-04)*B*B)
drv=2 (2.52e-01*S+9.82e-01*SL*5.37e-03+3.36e-02*B+6.80e-01+(-2.91e-04)*B*B)
tPLHbs drv=1 (2.36e-01*S+1.98*SL*5.37e-03+3.76e-02*B+8.33e-01+(-3.39e-04)*B*B)
drv=2 (2.37e-01*S+9.82e-01*SL*5.37e-03+3.72e-02*B+8.55e-01+(-3.32e-04)*B*B)
tPLHcs drv=1 (1.70e-01*S+1.98*SL*5.37e-03+2.68e-02*B+1.34e-01+(-2.06e-04)*B*B)
drv=2 (1.70e-01*S+9.83e-01*SL*5.37e-03+2.65e-02*B+1.56e-01+(-1.99e-04)*B*B)
tPLHss drv=1 ((-3.45e-03)*S+1.97*SL*5.37e-03+3.80e-02*B+8.18e-01+(-3.11e-04)*B*B)
drv=2 ((-3.56e-03)*S+9.68e-01*SL*5.37e-03+3.78e-02*B+8.41e-01+(-3.08e-04)*B*B)
tPDAas all ((-6.96e-02)*S+2.00*SL*5.37e-03+(-1.02e-05)*B+2.73e-01)
tPDAbs all ((-8.79e-02)*S+2.00*SL*5.37e-03+(-9.95e-06)*B+4.19e-01)
tPDAcs drv=1 ((-1.25e-02)*S+2.03*SL*5.37e-03+(-3.48e-05)*B+1.73e-01)
drv=2 ((-8.11e-03)*S+1.04*SL*5.37e-03+(-1.50e-04)*B+2.09e-01+1.66e-06*B*B)
tPDAss drv=1 ((-2.63e-03)*S+1.31*SL*5.37e-03+(-1.78e-03)*B+5.57e-01+(-1.15e-01)*S*SL*5.37e-03+2.89
e-03*S*B+1.67e-02*SL*5.37e-03*B)
drv=2 (8.32e-02*S+9.72e-01*SL*5.37e-03+1.59e-02*B+2.78e-01+(-1.91e-04)*B*B)
Samsung ASIC 5-64 STDM110
ADDER
Adder/Subtracter
Characteristic Equation Tables (Cont.)
2) Power Equations [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5)
3) Size Equations [Unit: µm]
Case Case Equation
ovf0sub0 drv=1 (2.74e-01*S+3.48*SL*5.37e-03+7.60e-01*B+(-1.81e-01)+(-1.73)*S*SL*5.37e-03
+(-3.41e-02)*S*B+1.78*SL*5.37e-03*B)
drv=2 (8.17e-01*S+4.97*SL*5.37e-03+8.33e-01*B+(-7.59e-01)+(-3.59)*S*SL*5.37e-03
+(-2.16e-02)*S*B+2.14*SL*5.37e-03*B)
ovf0sub1 drv=1 ((-6.90e-01)*S+(-3.05)*SL*5.37e-03+9.89e-01*B+6.46e-01+2.64*S*SL*5.37e-03
+2.60e-02*S*B+1.81*SL*5.37e-03*B)
drv=2 ((-1.84)*S+(-6.39)*SL*5.37e-03+1.06*B+1.77+5.81*S*SL*5.37e-03+4.92e-02*S*
B+2.12*SL*5.37e-03*B)
ovf1sub0 drv=1 (5.03e-01*S+5.35*SL*5.37e-03+7.60e-01*B+(-1.67e-01)+(-1.90)*S*SL*5.37e-03
+(-3.61e-02)*S*B+1.78*SL*5.37e-03*B)
drv=2 (1.10*S+7.43*SL*5.37e-03+8.34e-01*B+(-7.83e-01)+(-3.76)*S*SL*5.37e-03+(-2.
49e-02)*S*B+2.14*SL*5.37e-03*B)
ovf1sub1 drv=1 ((-5.35e-01)*S+(-1.44)*SL*5.37e-03+9.88e-01*B+6.76e-01+2.54*S*SL*5.37e-03
+2.55e-02*S*B+1.81*SL*5.37e-03*B)
drv=2 ((-1.63)*S+(-4.47)*SL*5.37e-03+1.06*B+1.81+5.80*S*SL*5.37e-03+4.68e-02*S*
B+2.13*SL*5.37e-03*B)
Type Case Equation
Width ovf0sub0 ((-4.72e-03)*B*B+3.90e-01*B+43.10)
ovf0sub1 ((-4.72e-03)*B*B+3.90e-01*B+50.10)
ovf1sub0 ((-3.18e-03)*B*B+2.64e-01*B+45.35)
ovf1sub1 ((-3.18e-03)*B*B+2.64e-01*B+52.35)
Height all (11.00*B+1.75e-15)
STDM110 5-65 Samsung ASIC
BS
Barrel Shifter
Function Description
The BS is an n-bit barrel shifter which is provided as a compiler. The BS is intended for use in high-speed
and low-power applications. It performs a shifting or circular rotation operation and allows both arithmetic and
logical shift operations. Also, it can shift and rotate input data in either direction and the direction of the shift
can be chosen between MSB (LEFT) and LSB (RIGHT) of the bit string. Logical shifts fill vacant bits with
zeros, and arithmetic shifts fill spaces with duplicates of the original MSB. The vacant bits also can be filled
with filler data input (FIN). During a right shift, the FIN data fills the vacant bits with data from the LSB of the
shift data bus. During a left shift, the shift data bus fills the vacant bits with data from the MSB of the shift data
bus (essentially a circular shift).
Function Table
MSH DIR C1 C2 DOUT
0 0 0 0 Shift right and fill with zeros
0 0 0 1 Shift right and fill with MSB of DIN[ ]
0 0 1 0 Shift right and fill with FIN[ ] data
0 0 1 1 Rotate right
0 1 0 0 Shift left and fill with zeros
0 1 0 1 Shift left and fill with MSB
0 1 1 0 Shift left and fill with FIN[ ] data
0 1 1 1 Rotate left
1 X 0 0 All the bits are set to zero
1 X 0 1 All the bits are set to the MSB of DIN[ ]
1 X 1 0 FIN[ ]
1 X 1 1 DIN[ ]
Logic Symbol Features
• Asynchronous operation
• 4 to 64 bit Barrel Shifter
• High speed, low power operation
• Transmission gate mutiplexing scheme
• Bi-directional shift or rotation
• Fill with zero, MSB, or filler data
• Refresh flag
• Two output drive-strengths available
DIN [bits–1:0]
DOUT [bits–1:0]
SH [m–1:0]
C1
C2
MSH
m=log2bits
DIR
FIN [bits–1:0]
bs_<bits>_<type>_d<drv>
Samsung ASIC 5-66 STDM110
BS
Barrel Shifter
Parameter Description
BS is the compiler that automatically generates symbol, netlist, timing model, power model and layout
according to the following parameters.
Pin Description
Pin Capacitance [Unit: pF]
Block Diagram
Parameter Name Description Range
bits Number of bits for the input data bus 4 to 64
type Direction of shift BOTH/LEFT/RIGHT
drv Drive strength 1/2
Name TYPE Description
DIN[ ]
Input
Data input bus
FIN[ ] Filler data input
DIR Specify the direction of the shift or rotation (Left/Right)
(optional when the parameter type = BOTH)
C1, C2 Specify the filler at the vacant bit (zero/MSB/FIN[ ])
SH[ ] Shift amount (unsigned-magnitude binary)
MSH Maximum shift flag. It refreshes all the bits of output
data with filler according to C1 and C2.
DOUT[ ] Output Data output bus
Name Case Value
C1 all 0.0078
C2 all 0.0111
FIN[ ] all 0.0014
MSH type=BOTH 0.0114
type=LEFT/RIGHT 0.0174
DIN[ ] type=BOTH 0.0095
type=LEFT/RIGHT 0.0081
SH[ ] type=BOTH -0.000009*bits*bits+0.00048*bits+0.021
type=LEFT/RIGHT -0.000005*bits*bits+0.00029*bits+0.010
DIR type=BOTH 0.0055
DIN[ ]
FIN[ ]
C1 C2
Fill
Block
SH[ ]
Direction
Block DOUT[ ]
MSH DIR
Right Shift
Block
Left Shift
Block
STDM110 5-67 Samsung ASIC
BS
Barrel Shifter
Timing Diagram
Timing Type Definition
Timing Type Definition
tPHLdid/tPLHdid Propagation delay from DIN[ ] to DOUT[ ]
tPHLfid/tPLHfid Propagation delay from FIN[ ] to DOUT[ ]
tPHLshd/tPLHshd Propagation delay from SH[ ] to DOUT[ ]
tPHLdrd/tPLHdrd Propagation delay from DIR to DOUT[ ]
tPHLc1d/tPLHc1d Propagation delay from C1 to DOUT[ ]
tPHLc2d/tPLHc2d Propagation delay from C2 to DOUT[ ]
tPHLmsd/tPLHmsd Propagation delay from MSH to DOUT[ ]
tPDAdid De-access time from DIN[ ] to DOUT[ ]
tPDAfid De-access time from FIN[ ] to DOUT[ ]
tPDAshd De-access time from SH[ ] to DOUT[ ]
tPDAdrd De-access time from DIR to DOUT[ ]
tPDAc1d De-access time from C1 to DOUT[ ]
tPDAc2d De-access time from C2 to DOUT[ ]
tPDAmsd De-access time from MSH to DOUT[ ]
C1
SH[ ]
DIR
MSH
DIN[ ]
FIN[ ]
C2
tPDAmsd tPXXmsd
DOUT[ ]
tPDAc2d tPXXc2d
tPDAc1d tPXXc1d
tPDAdrd tPXXdrd
tPDAshd tPXXshd
tPDAfid tPXXfid
tPDAdid tPXXdid
* tPXX means tPHL or tPLH.
Samsung ASIC 5-68 STDM110
BS
Barrel Shifter
Characteristic Reference Tables
1) Timing Characteristics [Unit: ns]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Symbol Description Unit Symbol Description Unit
B Number of Bits - S Input Slope ns
VDD Power Supply Voltage V SL Standard Load -
CLOutput Load SL SA Input Switching Activity -
Type 8 24364864
Case: type=BOTH, drv=1
tPHLc1d/tPLHc1d 1.14 1.11 1.37 1.30 1.47 1.40 1.53 1.44 1.52 1.44
tPHLc2d/tPLHc2d 1.10 1.07 1.32 1.28 1.42 1.38 1.47 1.43 1.45 1.42
tPHLdid/tPLHdid 1.15 1.07 1.38 1.27 1.49 1.36 1.54 1.41 1.53 1.39
tPHLmsd/tPLHmsd 0.54 0.53 0.57 0.58 0.60 0.61 0.63 0.64 0.67 0.69
tPHLshd/tPLHshd 0.74 0.69 0.76 0.75 0.78 0.80 0.80 0.84 0.82 0.91
tPHLfid/tPLHfid 0.93 0.86 1.11 1.04 1.19 1.12 1.21 1.15 1.18 1.11
tPHLdrd/tPLHdrd 0.50 0.47 0.53 0.49 0.55 0.51 0.57 0.52 0.59 0.55
tPDAc1d 0.59 0.77 0.84 0.86 0.80
tPDAc2d 0.57 0.75 0.83 0.85 0.81
tPDAdid 0.56 0.65 0.69 0.69 0.64
tPDAmsd 0.25 0.27 0.28 0.29 0.31
tPDAshd 0.36 0.38 0.40 0.42 0.45
tPDAfid 0.50 0.57 0.63 0.68 0.75
tPDAdrd 0.25 0.27 0.28 0.29 0.31
Case: type=LEFT, drv=1
tPHLc1d/tPLHc1d 1.12 1.09 1.35 1.29 1.45 1.38 1.51 1.42 1.50 1.42
tPHLc2d/tPLHc2d 1.08 1.05 1.29 1.26 1.39 1.36 1.44 1.41 1.42 1.40
tPHLdid/tPLHdid 1.12 1.05 1.35 1.25 1.46 1.34 1.51 1.39 1.50 1.37
tPHLmsd/tPLHmsd 0.38 0.37 0.41 0.42 0.44 0.45 0.46 0.48 0.50 0.53
tPHLshd/tPLHshd 0.72 0.66 0.77 0.73 0.80 0.78 0.83 0.83 0.87 0.90
tPHLfid/tPLHfid 0.90 0.84 1.09 1.02 1.16 1.10 1.19 1.13 1.15 1.09
tPDAc1d 0.58 0.74 0.82 0.85 0.83
tPDAc2d 0.56 0.73 0.81 0.83 0.79
tPDAdid 0.54 0.66 0.70 0.70 0.62
tPDAmsd 0.21 0.22 0.24 0.25 0.26
tPDAshd 0.34 0.37 0.40 0.42 0.46
tPDAfid 0.48 0.55 0.61 0.66 0.73
STDM110 5-69 Samsung ASIC
BS
Barrel Shifter
Characteristic Reference Table (Cont.)
1) Timing Characteristics [Unit: ns]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
2) Power Characteristics [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5, drv = 1)
3) Size Characteristics [Unit: µm]
Type 8 24364864
Case: type=RIGHT, drv=1
tPHLc1d/tPLHc1d 1.12 1.09 1.35 1.28 1.45 1.38 1.51 1.42 1.50 1.42
tPHLc2d/tPLHc2d 1.08 1.05 1.29 1.26 1.39 1.36 1.44 1.41 1.43 1.40
tPHLdid/tPLHdid 1.13 1.05 1.35 1.25 1.46 1.34 1.52 1.39 1.51 1.38
tPHLmsd/tPLHmsd 0.38 0.37 0.41 0.42 0.44 0.45 0.46 0.48 0.50 0.53
tPHLshd/tPLHshd 0.72 0.67 0.75 0.73 0.76 0.78 0.78 0.82 0.80 0.88
tPHLfid/tPLHfid 0.90 0.84 1.09 1.02 1.16 1.10 1.19 1.13 1.15 1.09
tPDAc1d 0.57 0.75 0.82 0.85 0.80
tPDAc2d 0.56 0.73 0.81 0.83 0.79
tPDAdid 0.54 0.68 0.72 0.71 0.62
tPDAmsd 0.21 0.22 0.23 0.25 0.26
tPDAshd 0.34 0.37 0.39 0.41 0.43
tPDAfid 0.48 0.55 0.61 0.66 0.73
Case 8 24 36 48 64
type=BOTH 5.12 32.09 52.32 72.54 99.51
type=LEFT 4.51 19.05 29.96 40.86 55.41
type=RIGHT 2.91 18.36 29.96 41.55 57.00
Type Case 8 24 36 48 64
Width type=BOTH 73.45 132.42 168.28 196.97 224.07
type=LEFT 45.41 72.41 90.79 107.57 127.44
type=RIGHT 45.41 72.41 90.79 107.57 127.44
Height all 110.00 286.00 418.00 550.00 726.00
Samsung ASIC 5-70 STDM110
BS
Barrel Shifter
Characteristic Equation Table
1) Timing Equations [Unit: ns]
Case=BOTH (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLc1d drv=1 (1.22e-01*S+2.06*SL*5.37e-03+1.97e-02*B+8.63e-01+(-1.81e-04)*B*B)
drv=2 (1.21e-01*S+1.07*SL*5.37e-03+1.97e-02*B+9.05e-01+(-1.81e-04)*B*B)
tPHLc2d drv=1 (1.20e-01*S+2.07*SL*5.37e-03+1.89e-02*B+8.30e-01+(-1.77e-04)*B*B)
drv=2 (1.20e-01*S+1.08*SL*5.37e-03+1.90e-02*B+8.70e-01+(-1.78e-04)*B*B)
tPHLdid drv=1 (1.14e-01*S+2.06*SL*5.37e-03+2.00e-02*B+8.68e-01+(-1.82e-04)*B*B)
drv=2 (1.15e-01*S+1.08*SL*5.37e-03+2.01e-02*B+9.06e-01+(-1.84e-04)*B*B)
tPHLmsd drv=1 (8.81e-02*S+1.98*SL*5.37e-03+2.35e-03*B+3.92e-01+1.41e-01*S*SL*5.37e-03+
(-3.14e-05)*S*B+(-1.47e-04)*SL*5.37e-03*B)
drv=2 (8.80e-02*S+9.92e-01*SL*5.37e-03+2.36e-03*B+4.32e-01+1.42e-01*S*SL*5.37e-03+
(-4.24e-05)*S*B+(-1.23e-04)*SL*5.37e-03*B)
tPHLshd drv=1 (9.23e-02*S+1.98*SL*5.37e-03+1.52e-03*B+6.01e-01+1.50e-01*S*SL*5.37e-03+
(-8.55e-05)*S*B+(-9.17e-05)*SL*5.37e-03*B)
drv=2 (9.29e-02*S+9.98e-01*SL*5.37e-03+1.54e-03*B+6.39e-01+1.48e-01*S*SL*5.37e-03+
(-8.40e-05)*S*B+(-6.75e-05)*SL*5.37e-03*B)
tPHLfid drv=1 (2.42e-01*S+2.14*SL*5.37e-03+1.69e-02*B+6.38e-01+(-1.73e-04)*B*B)
drv=2 (2.41e-01*S+1.15*SL*5.37e-03+1.70e-02*B+6.78e-01+(-1.73e-04)*B*B)
tPHLdrd drv=1 (8.39e-02*S+1.98*SL*5.37e-03+1.58e-03*B+3.68e-01+1.31e-01*S*SL*5.37e-03+
(-5.96e-05)*S*B+(-2.79e-05)*SL*5.37e-03*B
drv=2 (8.32e-02*S+9.97e-01*SL*5.37e-03+1.60e-03*B+4.09e-01+1.32e-01*S*SL*5.37e-03+
(-2.91e-05)*S*B+(-1.37e-05)*SL*5.37e-03*B
tPLHc1d drv=1 (2.65e-02*S+1.99*SL*5.37e-03+1.69e-02*B+8.74e-01+(-1.55e-04)*B*B)
drv=2 (2.64e-02*S+1.01*SL*5.37e-03+1.71e-02*B+9.10e-01+(-1.57e-04)*B*B)
tPLHc2d drv=1 (3.28e-03*S+1.97+SL*5.37e-03+1.81e-02*B+8.32e-01+(-1.64e-04)*B*B)
drv=2 (4.72e-03*S+9.93e-01+SL*5.37e-03+1.82e-02*B+8.68e-01+(-1.66e-04)*B*B)
tPLHdid drv=1 (6.40e-03*S+1.97*SL*5.37e-03+1.75e-02*B+8.32e-01+(-1.63e-04)*B*B)
drv=2 (6.70e-03*S+9.79e-01*SL*5.37e-03+1.76e-02*B+8.69e-01+(-1.63e-04)*B*B)
tPLHmsd drv=1 (8.61e-02*S+1.95*SL*5.37e-03+2.77e-03*B+3.87e-01+1.40e-01*S*SL*5.37e-03)
drv=2 (8.64e-02*S+9.64e-01*SL*5.37e-03+2.79e-03*B+4.23e-01+1.42e-01*S*SL*5.37e-03)
tPLHshd drv=1 (1.22e-01*S+2.06*SL*5.37e-03+3.97e-03*B+5.20e-01+(-2.97e-04)*SL*5.37e-03*B)
drv=2 (1.22e-01*S+1.08*SL*5.37e-03+3.98e-03*B+5.56e-01+(-3.31e-04)*SL*5.37e-03*B)
tPLHfid drv=1 ((-3.07e-02)*S+1.95*SL*5.37e-03+1.65e-02*B+6.42e-01+(-1.67e-04)*B*B)
drv=2 ((-3.05e-02)*S+9.66e-01*SL*5.37e-03+1.65e-02*B+6.79e-01+(-1.67e-04)*B*B
tPLHdrd drv=1 ((-3.47e-04)*S+1.96*SL*5.37e-03+1.38e-03*B+3.54e-01+(-1.61e-02)*S*SL*5.37e-03+
(-7.16e-05)*S*B+(-1.24e-04)*SL*5.37e-03*B)
drv=2 ((-3.30e-03)*S+9.58e-01*SL*5.37e-03+1.40e-03*B+3.93e-01+(-7.35e-05)*S*B)
STDM110 5-71 Samsung ASIC
BS
Barrel Shifter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=BOTH (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPDAc1d drv=1 (1.22e-02*S+9.51e-01*SL*5.37e-03+1.72e-02*B+4.13e-01+(-1.87e-04)*B*B)
drv=2 (2.22e-02*S+4.11e-01*SL*5.37e-03+3.43e-03*B+5.81e-01)
tPDAc2d drv=1 (1.75e-02*S+9.43e-01*SL*5.37e-03+1.70e-02*B+3.94e-01+(-1.77e-04)*B*B)
drv=2 (2.44e-02*S+3.93e-01*SL*5.37e-03+2.04e-02*B+3.83e-01+(-2.50e-04)*B*B)
tPDAdid drv=1 (3.46e-02*S+1.15*SL*5.37e-03+9.78e-03*B+4.18e-01+(-1.15e-04)*B*B)
drv=2 (5.32e-02*S+6.00e-01*SL*5.37e-03+6.14e-03*B+4.53e-01+(-6.56e-05)*B*B)
tPDAmsd drv=1 ((5.00e-02)*S+1.21*SL*5.37e-03+9.81e-04*B+1.72e-01+(-8.82e-02)*S*SL*5.37e-03+)
7.78e-05*S*B+(-2.47e-04)*SL*5.37e-03*B)
drv=2 ((5.32e-02)*S+6.17e-01*SL*5.37e-03+9.72e-04*B+1.96e-01+(-9.12e-02)*S*SL*5.37e-03+
6.18e-05*S*B+(-2.26e-04)*SL*5.37e-03*B)
tPDAshd drv=1 (6.07e-02*S+1.20*SL*5.37e-03+1.64e-03*B+2.65e-01+(-1.35e-01)*S*SL*5.37e-03
drv=2 (7.00e-02*S+6.12e-01*SL*5.37e-03+1.69e-03*B+2.88e-01+(-1.39e-01)*S*SL*5.37e-03
tPDAfid drv=1 ((-4.52e-02)*S+1.01*SL*5.37e-03+4.55e-03*B+4.20e-01+2.09e-01*S*SL*5.37e-03+6.36e-
04*S*B+(-5.43e-03)*SL*5.37e-03*B)
drv=2 ((-2.19e-02)*S+4.75e-01*SL*5.37e-03+5.58e-03*B+4.05e-01+1.91e-01*S*SL*5.37e-03+1.
79e-04*S*B+(-6.64e-03)*SL*5.37e-03*B)
tPDAdrd drv=1 ((-3.91e-03)*S+1.19*SL*5.37e-03+9.42e-04*B+1.83e-01+(-1.70e-02)*S*SL*
5.37e-03+(-7.17e-05)*S*B+(-6.07e-05)*SL*5.37e-03*B)
drv=2 ((-3.81e-03)*S+6.01e-01*SL*5.37e-03+9.51e-04*B+2.08e-01+(-1.67e-02)*S*SL*
5.37e-03+(-7.43e-05)*S*B+(-2.91e-05)*SL*5.37e-03*B)
Samsung ASIC 5-72 STDM110
BS
Barrel Shifter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=LEFT (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLc1d drv=1 (1.22e-01*S+2.06*SL*5.37e-03+1.99e-02*B+8.40e-01+(-1.83e-04)*B*B)
drv=2 (1.23e-01*S+1.08*SL*5.37e-03+1.99e-02*B+8.83e-01+(-1.82e-04)*B*B)
tPHLc2d drv=1 (1.20e-01*S+2.07*SL*5.37e-03+1.89e-02*B+8.08e-01+(-1.79e-04)*B*B)
drv=2 (1.20e-01*S+1.09*SL*5.37e-03+1.90e-02*B+8.51e-01+(-1.79e-04)*B*B)
tPHLdid drv=1 (1.17e-01*S+2.06*SL*5.37e-03+2.00e-02*B+8.42e-01+(-1.84e-04)*B*B)
drv=2 (1.16e-01*S+1.09*SL*5.37e-03+2.00e-02*B+8.86e-01+(-1.84e-04)*B*B)
tPHLmsd drv=1 (6.09e-02*S+1.95*SL*5.37e-03+1.97e-03*B+2.41e-01+1.50e-01*S*SL*5.37e-03+
8.54e-04*S*B+5.76e-04*SL*5.37e-03*B)
drv=2 (1.21e-01*S+1.07*SL*5.37e-03+2.59e-03*B+2.49e-01+6.07e-04*SL*5.37e-03*B)
tPHLshd drv=1 (9.05e-02*S+1.99*SL*5.37e-03+2.60e-03*B+5.77e-01+1.50e-01*S*SL*5.37e-03)
drv=2 (9.19e-02*S+1.00*SL*5.37e-03+2.67e-03*B+6.21e-01+1.51e-01*S*SL*5.37e-03+
(-5.25e-05)*S*B+4.87e-05*SL*5.37e-03*B)
tPHLfid drv=1 (2.40e-01*S+2.14*SL*5.37e-03+1.70e-02*B+6.15e-01+(-1.74e-04)*B*B)
drv=2 (2.41e-01*S+1.16*SL*5.37e-03+1.71e-02*B+6.58e-01+(-1.76e-04)*B*B)
tPLHc1d drv=1 (2.58e-02*S+2.00*SL*5.37e-03+1.71e-02*B+8.55e-01+(-1.57e-04)*B*B)
drv=2 (2.66e-02*S+1.01*SL*5.37e-03+1.69e-02*B+8.96e-01+(-1.55e-04)*B*B)
tPLHc2d drv=1 (3.35e-03*S+1.98+SL*5.37e-03+1.81e-02*B+8.14e-01+(-1.65e-04)*B*B)
drv=2 (3.72e-03*S+9.90e-01+SL*5.37e-03+1.80e-02*B+8.54e-01+(-1.64e-04)*B*B)
tPLHdid drv=1 (6.59e-03*S+1.97*SL*5.37e-03+1.75e-02*B+8.14e-01+(-1.62e-04)*B*B)
drv=2 (5.84e-03*S+9.81e-01*SL*5.37e-03+1.75e-02*B+8.53e-01+(-1.63e-04)*B*B)
tPLHmsd drv=1 (8.44e-02*S+1.94*SL*5.37e-03+2.62e-03*B+2.29e-01+1.67e-01*S*SL*5.37e-03+
5.64e-04*S*B+3.35e-04*SL*5.37e-03B)
drv=2 (8.63e-02*S+9.53e-01*SL*5.37e-03+2.88e-03*B+2.68e-01+1.70e-01*S*SL*5.37e-03+
5.43e-04*S*B+3.63e-04*SL*5.37e-03B)
tPLHshd drv=1 (9.01e-02*S+1.96*SL*5.37e-03+4.19e-03*B+5.05e-01+1.48e-01*S*SL*5.37e-03)
drv=2 (9.00e-02*S+9.74e-01*SL*5.37e-03+4.19e-03*B+5.46e-01+1.50e-01*S*SL*5.37e-03)
tPLHfid drv=1 ((-3.10e-02)*S+1.95*SL*5.37e-03+1.68e-02*B+6.22e-01+(-1.72e-04)*B*B)
drv=2 ((-3.06e-02)*S+9.63e-01*SL*5.37e-03+1.67e-02*B+6.64e-01+(-1.71e-04)*B*B)
STDM110 5-73 Samsung ASIC
BS
Barrel Shifter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=LEFT (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPDAc1d drv=1 (2.07e-02*S+9.56e-01*SL*5.37e-03+1.55e-02*B+4.06e-01+(-1.52e-04)*B*B)
drv=2 ((-1.51e-02)*S+3.31e-01*SL*5.37e-03+3.26e-03*B+5.79e-01+1.99e-01*S*SL*5.37e-03 )
tPDAc2d drv=1 (2.08e-02*S+9.68e-01*SL*5.37e-03+1.66e-02*B+3.79e-01+(-1.73e-04)*B*B)
drv=2 ((-4.20e-03)*S+3.37e-01*SL*5.37e-03+3.57e-03*B+5.57e-01+1.67e-01*S*SL*5.37e-03 )
tPDAdid drv=1 (4.19e-02*S+1.13*SL*5.37e-03+1.24e-02*B+3.85e-01+(-1.53e-04)*B*B)
drv=2 (5.22e-02*S+6.00e-01*SL*5.37e-03+6.98e-03*B+4.36e-01+(-7.68e-05)*B*B)
tPDAfid drv=1 ((-4.12e-02)*S+1.02*SL*5.37e-03+4.51e-03*B+4.01e-01+2.03e-01*S*SL*5.37e-03+
5.54e-04*S*B+(-5.23e-03)*SL*5.37e-03*B)
drv=2 ((-4.52e-02)*S+4.27e-01*SL*5.37e-03+4.70e-03*B+4.34e-01+2.03e-01*S*SL*5.37e-03+
5.40e-04*S*B+(-5.53e-03)*SL*5.37e-03*B)
tPDAmsd drv=1 (3.69e-02*S+1.19*SL*5.37e-03+8.91e-04*B+1.30e-01+(-7.60e-02)*S*SL*5.37e-03+
3.84e-04*S*B+4.63e-05*SL*5.37e-03*B)
drv=2 (3.85e-02*S+5.96e-01*SL*5.37e-03+1.03e-03*B+1.54e-01+(-8.14e-02)*S*SL*5.37e-03+
3.66e-04*S*B+1.24e-04*SL*5.37e-03*B)
tPDAshd drv=1 (6.04e-02*S+1.21*SL*5.37e-03+1.97e-03*B+2.50e-01+(-1.30e-01)*S*SL*
5.37e-03+4.69e-04*S*B+(-4.96e-04)*SL*5.37e-03*B)
drv=2 (6.30e-02*S+6.25e-01*S*5.37e-03+1.96e-03*B+2.77e-01+(-1.35e-01)*S*SL*
5.37e-03+4.81e-04*S*B+(-6.12e-04)*SL*5.37e-03*B)
Samsung ASIC 5-74 STDM110
BS
Barrel Shifter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=RIGHT (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPHLc1d drv=1 (1.23e-01*S+2.06*SL*5.37e-03+1.97e-02*B+8.42e-01+(-1.80e-04)*B*B)
drv=2 (1.22e-01*S+1.08*SL*5.37e-03+1.99e-02*B+8.85e-01+(-1.83e-04)*B*B)
tPHLc2d drv=1 (1.20e-01*S+2.06*SL*5.37e-03+1.88e-02*B+8.09e-01+(-1.76e-04)*B*B)
drv=2 (1.20e-01*S+1.08*SL*5.37e-03+1.88e-02*B+8.55e-01+(-1.76e-04)*B*B)
tPHLdid drv=1 (1.14e-01*S+2.06*SL*5.37e-03+1.99e-02*B+8.48e-01+(-1.82e-04)*B*B)
drv=2 (1.13e-01*S+1.08*SL*5.37e-03+2.00e-02*B+8.91e-01+(-1.82e-04)*B*B)
tPHLmsd drv=1 (6.12e-02*S+1.95*SL*5.37e-03+1.99e-03*B+2.39e-01+1.49e-01*S*SL*5.37e-03+
8.32e-04*S*B+5.67e-04*SL*5.37e-03*B)
drv=2 (1.21e-01*S+1.06*SL*5.37e-03+2.59e-03*B+2.46e-01+6.43e-04*SL*5.37e-03*B)
tPHLshd drv=1 (9.26e-02*S+1.99*SL*5.37e-03+1.48e-03*B+5.84e-01+1.49e-01*S*SL*5.37e-03+
(-6.52e-05)*S*B+(-7.77e-05)*SL*5.37e-03*B)
drv=2 (9.28e-02*S+1.01*SL*5.37e-03+1.53e-03*B+6.27e-01+1.50e-01*S*SL*5.37e-03+
(-8.42e-05)*S*B+(-7.61e-05)*SL*5.37e-03*B)
tPHLfid drv=1 (2.41e-01*S+2.14*SL*5.37e-03+1.70e-02*B+6.14e-01+(-1.75e-04)*B*B)
drv=2 (2.41e-01*S+1.16*SL*5.37e-03+1.70e-02*B+6.59e-01+(-1.73e-04)*B*B)
tPLHc1d drv=1 (2.58e-02*S+2.00*SL*5.37e-03+1.70e-02*B+8.53e-01+(-1.56e-04)*B*B)
drv=2 (2.55e-02*S+1.01*SL*5.37e-03+1.70e-02*B+8.94e-01+(-1.55e-04)*B*B)
tPLHc2d drv=1 (3.27e-03*S+1.98*SL*5.37e-03+1.80e-02*B+8.13e-01+(-1.63e-04)*B*B)
drv=2 (3.47e-03*S+9.91e-01*SL*5.37e-03+1.81e-02*B+8.53e-01+(-1.64e-04)*B*B)
tPLHdid drv=1 (6.89e-03*S+1.97*SL*5.37e-03+1.74e-02*B+8.13e-01+(-1.61e-04)*B*B)
drv=2 (6.06e-03*S+9.80e-01*SL*5.37e-03+1.74e-02*B+8.54e-01+(-1.61e-04)*B*B)
tPLHmsd drv=1 (8.45e-02*S+1.94*SL*5.37e-03+2.66e-03*B+2.27e-01+1.68e-01*S*SL*5.37e-03+
5.53e-04*S*B+3.27e-04*SL*5.37e-03B)
drv=2 (8.52e-02*S+9.52e-01*SL*5.37e-03+2.85e-03*B+2.67e-01+1.70e-01*S*SL*5.37e-03+
5.90e-04*S*B+3.03e-04*SL*5.37e-03B)
tPLHshd drv=1 (1.22e-01*S+2.06*SL*5.37e-03+3.85e-03*B+5.03e-01+(-2.56e-04)*SL*5.37e-03)
drv=2 (1.21e-01*S+1.08*SL*5.37e-03+3.90e-03*B+5.43e-01+(-3.79e-04)*SL*5.37e-03)
tPLHfid drv=1 ((-3.22e-02)*S+1.95*SL*5.37e-03+1.66e-02*B+6.22e-01+(-1.69e-04)*B*B)
drv=2 ((-3.24e-02)*S+9.64e-01*SL*5.37e-03+1.65e-02*B+6.63e-01+(-1.68e-04)*B*B)
STDM110 5-75 Samsung ASIC
BS
Barrel Shifter
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns]
Case=RIGHT (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Type Case Equation
tPDAc1d drv=1 (2.39e-02*S+9.67e-01*SL*5.37e-03+1.66e-02*B+3.92e-01+(-1.74e-04)*B*B)
drv=2 ((-1.48e-02)*S+3.31e-01*SL*5.37e-03+3.29e-03*B+5.77e-01+1.98e-01*S*SL*5.37e-03 )
tPDAc2d drv=1 (2.10e-02*S+9.68e-01*SL*5.37e-03+1.67e-02*B+3.77e-01+(-1.73e-04)*B*B)
drv=2 (2.25e-02*S+4.16e-01*SL*5.37e-03+1.98e-02*B+3.72e-01+(-2.38e-04)*B*B)
tPDAdid drv=1 (4.52e-02*S+1.11*SL*5.37e-03+1.45e-02*B+3.69e-01+(-1.81e-04)*B*B)
drv=2 (4.83e-02*S+5.89e-01*SL*5.37e-03+7.97e-03*B+4.31e-01+(-9.01e-05)*B*B)
tPDAfid drv=1 ((-4.15e-02)*S+1.02*SL*5.37e-03+4.51e-03*B+4.00e-01+2.02e-01*S*SL*5.37e-03+
5.59e-04*S*B+(-5.23e-03)*SL*5.37e-03*B)
drv=2 ((-4.50e-02)*S+4.28e-01*SL*5.37e-03+4.72e-03*B+4.31e-01+2.02e-01*S*SL*5.37e-03+
5.26e-04*S*B+(-5.52e-03)*SL*5.37e-03*B)
tPDAmsd drv=1 (3.61e-02*S+1.19*SL*5.37e-03+8.74e-04*B+1.30e-01+(-7.56e-02)*S*SL*5.37e-03+
4.01e-04*S*B+6.44e-05*SL*5.37e-03*B)
drv=2 (3.75e-02*S+6.00e-01*SL*5.37e-03+9.92e-04*B+1.54e-01+(-8.04e-02)*S*SL*5.37e-03+
3.87e-04*S*B+7.87e-05*SL*5.37e-03*B)
tPDAshd drv=1 (6.45e-02*S+1.20*SL*5.37e-03+1.60e-03*B+2.54e-01+(-1.29e-01)*S*SL*5.37e-03)
drv=2 (6.77e-02*S+6.15e-01*SL*5.37e-03+1.66e-03*B+2.78e-01+(-1.35e-01)*S*SL*5.37e-03)
Samsung ASIC 5-76 STDM110
BS
Barrel Shifter
2) Power Equations [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5)
3) Size Equations [Unit: µm]
Parameter Equation
type=BOTH drv=1 (3.46*S+1.28*SL*5.37e-03+1.66*B+(-9.12)+(-1.82e-01)*S*SL*5.37e-03+
(-2.16e-01)*S*B+1.34*SL*5.37e-03*B)
drv=2 (6.58*S+6.82*SL*5.37e-03+1.74*B+(-12.09)+(-4.53)*S*SL*5.37e-03+
(-2.60e-01)*S*B+1.13*SL*5.37e-03*B)
type=LEFT drv=1 (4.07e-01*S+(-1.53e-01)*SL*5.37e-03+8.22e-01*B+(-2.85)+1.22*S*SL*5.37e-03
+6.64e-02*S*B+1.37*SL*5.37e-03*B)
drv=2 (2.23*S+5.21*SL*5.37e-03+8.72e-01*B+(-5.04)+(-2.71)*S*SL*5.37e-03+
1.24e-01*S*B+1.14*SL*5.37e-03*B)
type=RIGHT drv=1 (3.26*S+9.09e-01*SL*5.37e-03+8.93e-01*B+(-5.52)+1.37*SL*5.37e-03*B)
drv=2 (1.93*S+5.14*SL*5.37e-03+8.75e-01*B+(-5.12)+(-2.71)*S*SL*5.37e-03+
1.41e-01*S*B+1.15*SL*5.37e-03*B)
Type Case Equation
Width type=BOTH ((-2.49e-02)*B*B+4.48*B+39.19)
type=LEFT ((-5.57e-03)*B*B+1.87*B+30.84)
type=RIGHT ((-5.57e-03)*B*B+1.87*B+30.84)
Height all (11.00*B+22.00)
STDM110 5-77 Samsung ASIC
MPY
Modified Booth Multiplier
Function Description
The MPY is an NxM multiplier which is provided as a compiler. The MPY is intended for use in high-speed
and low-power applications. It adopts the modified booth’s multiplication scheme to encode the multiplier bits
by partitioning the bits into three bit groups, with one bit shared between groups and performs a signed
multiplication operation between two integers. It allows from 6-bit to 64-bit with a configurable size of output
buffer and 1-stage pipeline scheme is available to improve the frequency of design.
The partial products are summed up with two adders; the MSB adder and the LSB adder. The MSB adder is
a fast group bypass adder. The LSB adder is programmable to insert 1-stage pipeline scheme and is,
therefore, the ripple carry adder. The clock to the pipeline controls the internal data change, so that the data
is always stable throughout the clock period and there is no hold problem.
Parameter Description
MPY is the compiler that automatically generates symbol, netlist, timing model, power model and layout
according to the following parameters.
Note: The xbits should be greater than or equal to the ybits (x ≥ y).
Parameter Name Description Range
xbits Multiplicand (XIN) bits 6 to 64 (even)
ybits Multiplier (YIN) bits 6 to 64 (even)
pipes Pipeline stage 0/1
drv Output drive strength 1/2
Logic Symbol Features
• Asynchronous/Synchronous operation
• 6 to 64 bit multiplication
• High speed/low power operation
• 2’s complement signed multiplication
• Modified Booth Algorithm
• 1-stage pipeline insertion available
• Two drive-strengths available.
mpy_<xbits>x<ybits>_p<pipes>_d<drv>
XIN [xbits–1:0]
YIN [ybits–1:0]
MCKN (optional)
RSTN (optional)
POUT [pbits−1:0]
* pbits=xbits+ybits
Samsung ASIC 5-78 STDM110
MPY
Modified Booth Multiplier
Pin Description
Pin Capacitance [Unit: pF]
Block Diagram
<pipes=0>
<pipes=1>
Pin Name TYPE Description
XIN [ ] Input Data input bus – Multiplicand
YIN [ ] Data input bus – Multiplier
MCKN Clock input to the pipeline register.
(optional when the parameter pipes = 1)
RSTN Reset negative input to the pipeline register.
(optional when the parameter pipes = 1).
POUT[ ] output Data output bus – Product result
Name Case Value
XIN[ ] all 0.0082
YIN[ ] all 0.0180
MCKN pipe=1 0.000069*x_width+0.0012*y_width+0.00661-0.000004*x_width*y_width
RSTN pipe=1 0.000153*x_width+0.0027*y_width+0.00096-0.000009*x_width*y_width
XIN[ ] MBE
YIN[ ]
MSB Adder
LSB Adder
Output POUT[ ]
Buffer
Array
Block
Block
Block Block
Input
Buffer
Block
MSB Adder
LSB Adder Output POUT[ ]
RSTN
MCKN
Buffer
Block
MBE Array
Block
Block Block
XIN[ ]
YIN[ ]
Input
Buffer
Block
STDM110 5-79 Samsung ASIC
MPY
Modified Booth Multiplier
Timing Diagram
<pipes=0>
Timing Type Definition
Timing Type Definition
tPHLxp/tPLHxp Propagation delay from XIN[ ] to POUT[ ]
tPHLyp/tPLHyp Propagation delay from YIN[ ] to POUT[ ]
tPDAxp De-access time from XIN[ ] to POUT[ ]
tPDAyp De-access time from YIN[ ] to POUT[ ]
tPHLxp
POUT[ ]
XIN[ ]
YIN[ ]
tPLHxp
tPDAxp
tPHLyp
tPLHyp
tPDAyp
Samsung ASIC 5-80 STDM110
MPY
Modified Booth Multiplier
Timing Diagram (Cont.)
<pipes=1>
Timing Type Definition
Timing Type Definition
SETUPxck Setup time for XIN[ ] to MCKN
SETUPyck Setup time for YIN[ ] to MCKN
SETUPrck Setup time for RSTN to MCKN
HOLDxck Hold time for XIN[ ] to MCKN
HOLDyck Hold time for YIN[ ] to MCKN
HOLDrck Hold time for RSTN to MCKN
MINHpck Minimum Clock Pulse width HIGH
MINLpck MInimum Clock Pulse width LOW
MINLprn MInimum Clock Pulse width RSTN
tPHLckp/tPLHckp Propagation delay from MCKN to POUT[ ]
tPHLrnp/tPLHrnp Propagation delay from RSTN to POUT[ ]
tPDAckp De-access time from MCKN to POUT[ ]
tPDArnp De-access time from RSTN to POUT[ ]
SETUPxck
MINHpck
SETUPyck
MINLpck
HOLDxck
HOLDyck
SETUPrck HOLDrck
RSTN
XIN[ ]
YIN[ ]
MCKN
POUT[ ]
tPDAckp tPDAckp tPDArnp
MINLprn
tPHLckp
tPLHckp tPHLrnk
tPLHrnk
tPHLckp
tPLHckp
Asynchronous
Reset
Synchronous
Reset
0 0 0 00 0 0 0 0 0 0 0 0
*NOTE: Synchronous reset: RSTN goes to ‘LOW’ state, when MCKN is at ‘HIGH’ state.
Asynchronous reset: RSTN goes to ‘LOW’ state, when MCKN is at ‘LOW’ state.
STDM110 5-81 Samsung ASIC
MPY
Modified Booth Multiplier
Characteristic Reference Table
1) Timing Characteristics [Unit: ns]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
Symbol Description Unit Symbol Description Unit
B Number of XIN[ ] bits - W Number of YIN[ ] bits -
VDD Power Supply Voltage V S Input Slope ns
CLOutput Load SL SA Input Switching Activity -
Type 8x8 24x24 36x36 48x48 64x64
Case: pipes=0,drv=1
tPHLxp/tPLHxp 1.62/1.55 3.70/3.70 5.21/5.25 6.69/6.74 8.59/8.63
tPHLyp/tPLHyp 1.84/1.72 3.51/3.46 4.76/4.76 6.01/6.06 7.68/7.80
tPDAxp 0.62 0.65 0.67 0.70 0.73
tPDAyp 0.99 1.05 1.10 1.14 1.21
Case: pipes=1,drv=1
HOLDrck 0.00 0.00 0.00 0.00 0.00
HOLDxck 0.00 0.00 0.00 0.00 0.00
HOLDyck 0.00 0.00 0.00 0.00 0.00
MINHpck 0.12 0.20 0.25 0.31 0.39
MINLpck 0.14 0.19 0.23 0.26 0.31
MINLprn 0.26 0.49 0.67 0.85 1.09
SETUPrck 0.25 0.49 0.67 0.85 1.09
SETUPxck 0.81 1.81 2.61 3.46 4.67
SETUPyck 1.01 1.74 2.32 2.93 3.80
tPHLckp 1.33 2.37 3.08 3.73 4.51
tPHLrnp 1.52 1.77 1.94 2.09 2.26
tPLHckp 1.25 2.39 3.16 3.86 4.68
tPLHrnp 0.00 0.00 0.00 0.00 0.00
tPDAckp 0.36 0.39 0.41 0.44 0.47
tPDArnp 0.41 0.46 0.50 0.54 0.59
Samsung ASIC 5-82 STDM110
MPY
Modified Booth Multiplier
Characteristic Reference Table (Cont.)
2) Power Characteristics [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5)
3) Size Characteristics [Unit: µm]
Case 8x8 24x24 36x36 48x48 64x64
pipes=0, drv=1 64.28 394.93 1088.07 2162.76 4189.22
pipes=1, drv=1 76.78 436.88 1036.20 1917.74 3532.13
Type Case 8x8 24x24 36x36 48x48 64x64
Width pipes=0, drv=1 191.65 448.41 640.57 832.39 1087.62
pipes=1, drv=1 244.65 501.41 693.57 885.39 1140.62
Height pipes=0, drv=1 110.00 286.00 418.00 550.00 726.00
pipes=1, drv=1 121.00 297.00 429.00 561.00 737.00
STDM110 5-83 Samsung ASIC
MPY
Modified Booth Multiplier
Characteristic Equation Table
1) Timing Equations [Unit: ns] (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
<pipes=0>
Type Case Equation
tPHLxp drv=1 (1.37e-01*S+2.00*SL*5.37e-03+2.07e-02*B+1.14e-01*W+4.23e-01+(-1.35e-04)*B*B)
drv=2 (1.33e-01*S+1.04*SL*5.37e-03+9.81e-03*B+1.16e-01*W+6.21e-01+2.33e-04*S*W)
tPHLyp drv=1 (1.26e-01*S+2.01*SL*5.37e-03+5.15e-03*B+9.92e-02*W+8.71e-01)
drv=2 (1.14e-01*S+1.02*SL*5.37e-03+4.77e-03*B+9.83e-02*W+9.24e-01+1.36e-02*S*SL*5.37e
-03+1.54e-04*S*B+5.30e-04*SL*5.37e-03*B+1.40e-04*S*W+2.72e-04*SL*5.37e-03*W+
1.49e-05*B*W)
tPLHxp drv=1 (6.43e-03*S+1.95*SL*5.37e-03+2.57e-02*B+1.15e-01*W+3.30e-01+(-2.05e-04)*B*B)
drv=2 (8.28e-03*S+9.55e-01*SL*5.37e-03+2.53e-02*B+1.18e-01*W+3.41e-01+(-1.98e-04)*B*B)
tPLHyp drv=1 (2.26e-02*S+1.96*SL*5.37e-03+3.66e-03*B+1.05e-01*W+7.43e-01)
drv=2 (1.30e-02*S+9.36e-01*SL*5.37e-03+3.37e-03*B+1.04e-01*W+7.83e-01+1.24e-02*S*SL*5
.37e-03+1.16e-04*S*B+2.94e-04*SL*5.37e-03*B+1.70e-04*S*W+5.86e-04*SL*5.37e-03*
W+1.60e-05*B*W)
tPDAxp drv=1 (6.32e-03*S+1.95*SL*5.37e-03+(-6.99e-06)*B+2.03e-03*W+4.95e-01)
drv=2 ((-6.13e-03)*S+9.21e-01*SL*5.37e-03+(-2.96e-04)*B+1.24e-03*W+5.35e-01+1.17e-02*S*
SL*5.37e-03+1.22e-04*S*B+3.26e-04*SL*5.37e-03*B+2.50e-04*S*W+5.06e-04*SL*
5.37e-03*W+1.02e-05*B*W)
tPDAyp drv=1 (2.29e-02*S+1.95*SL*5.37e-03+3.91e-03*B+(-7.74e-05)*W+8.51e-01)
drv=2 (1.32e-02*S+9.23e-01*SL*5.37e-03+3.67e-03*B+(-7.42e-04)*W+8.86e-01+1.10e-02*S*SL
*5.37e-03+1.27e-04*S*B+2.23e-04*SL*5.37e-03*B+1.43e-04*S*W+5.78e-04*SL*5.37e-03
*W+9.10e-06*B*W)
Samsung ASIC 5-84 STDM110
MPY
Modified Booth Multiplier
Characteristic Equation Table (Cont.)
1) Timing Equations [Unit: ns] (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
<pipes=1>
Type Case Equation
HOLDrck drv=1 ((-3.43e-03)*S+(-1.19e-02)*B+(-2.18e-05)*W+(-1.66e-02)+6.64
e-05*S*B+(-1.59e-04)*S*W+6.62e-07*B*W)
drv=2 ((-4.84e-03)*S+(-1.19e-02)*B+6.05e-05*W+(-1.77e-02)+8.40
e-05*S*B+(-1.47e-04)*S*W+(-9.19e-07)*B*W)
HOLDxck drv=1 (1.17e-01*S+3.08e-03*B+(-5.79e-02)*W+(-6.46e-02)+
(-1.69e-04)*W*W)
drv=2 (1.17e-01*S+3.08e-03*B+(-5.91e-02)*W+(-7.12e-02)+
(-1.73e-04)*W*W)
HOLDyck drv=1 (1.01e-01*S+(-8.36e-04)*B+(-3.66e-02)*W+(-4.49e-01)+(-1.17e-04)
*W*W)
drv=2 (1.01e-01*S+(-8.56e-04)*B+(-3.66e-02)*W+(-4.66e-01)+(-1.18e-04)
*W*W)
MINHpck all (2.51e-02*S+(-9.90e-05)*SL*5.37e-03+4.42e-03*B+(-9.56e-05)*W+
8.44e-02+5.40e-06*B*B)
MINLpck all (1.19e-01*S+9.61e-05*SL*5.37e-03+3.04e-03*B+1.20e-04*W+9.19
e-02+(-1.84e-05)*S*SL*5.37e-03+8.94e-05*S*B+(-6.96e-06)*SL*5.
37e-03*B+(-3.05e-05)*S*W+6.74e-06*SL*5.37e-03*W+(-2.84e-06)*
B*W)
MINLprn all (1.23e-01*S+(-5.58e-04)*SL*5.37e-03+1.49e-02*B+(-4.76e-05)*W+
1.12e-01+1.39e-04*S*W)
SETUPrck drv=1 (1.23e-01*S+1.49e-02*B+(-5.81e-05)*W+1.11e+1.40e-04*S*W)
drv=2 (1.27e-01*S+1.49e-02*B+5.48-05*W+1.09e-01)
SETUPxck drv=1 (1.36e-01*S+(-4.10e-05)*B+5.70e-02*W+3.19e-01+1.65e-04*W*W)
drv=2 (1.36e-01*S+(-4.47e-05)*B+5.84e-02*W+3.28e-01+1.68e-04*W*W)
STDM110 5-85 Samsung ASIC
MPY
Modified Booth Multiplier
1) Timing Equations [Unit: ns] (Cont.) (Typical process, 25°C, VDD=2.5V, CL=10, S=0.2)
<pipes=1>
Type Case Equation
SETUPyck drv=1 (1.24e-01*S+5.16e-03*B+3.65e-02*W+6.49e-01+1.12e-04*W*W)
drv=2 (1.25e-01*S+5.15e-03*B+3.63e-02*W+6.60e-01+1.15e-04*W*W)
tPHLckp drv=1 (1.27e-01*S+1.99*SL*5.37e-03+9.96e-03*B+6.18e-02*W+6.38e-01
+(-2.09e-04)*W*W)
drv=2 (1.27e-01*S+1.02*SL*5.37e-03+9.97e-03*B+6.31e-02*W+6.63e-01
+(-2.13e-04)*W*W)
tPHLrnp drv=1 (1.57e-01*S+2.00*SL*5.37e-03+1.72e-02*B+1.59e-04*W+1.25+(-5.
70e-05)*B*B)
drv=2 (1.57e-01*S+1.04*SL*5.37e-03+1.72e-02*B+2.04e-04*W+1.28+(-5.
77e-05)*B*B)
tPLHckp drv=1 (1.29e-01*S+1.96*SL*5.37e-03+2.92e-02*B+4.96e-02*W+5.09e-01
+(-2.46e-04)*B*W)
drv=2 (1.29e-01*S+9.59e-01*SL*5.37e-03+2.94e-02*B+5.05e-02*W+5.27
e-01+(-2.47e-04)*B*W)
tPLHrnp all (1.25e-11*S+7.61e-11*SL*5.37e-03+(-4.36e-12)*B+2.05e-12*W+1.
01e-10+4.97e-13*S*B
tPDAckp all (1.22e-01*S+1.22*SL*5.37e-03+(-2.46e-05)*B+1.92e-03*W+2.51e-
01+3.12e-03*S*SL*5.37e-03+7.17e-06*S*B+(-6.00e-05)*SL*5.37e-
03*B+1.19e-04*S*W+2.32e-04*SL*5.37e-03*W+6.38e-07*B*W)
tPDArnp drv=1 (1.24e-01*S+1.13*SL*5.37e-03+2.66e-05*B+3.21e-03*W+2.98e-01
+3.07e-04*S*W)
drv=2 (1.25e-01*S+1.13*SL*5.37e-03+1.25e-05*B+3.22e-03*W+2.98e-01
+3.07e-04*S*W)
Samsung ASIC 5-86 STDM110
MPY
Modified Booth Multiplier
Characteristic Equation Table (Cont.)
2) Power Equations [Unit: µW/MHz]
(Typical process, 25°C, VDD=2.5V, CL=10, S=0.2, SA=0.5)
3) Size Equations [Unit: µm]
Case Equation
pipes=0, drv=1 ((-7.20)*B+(-14.53)*W+153.33+1.32*B*W)
pipes=0, drv=2 ((-7.15)*B+(-14.38)*W+152.61+1.33*B*W)
pipes=1, drv=1 ((-3.08)*B+(-5.77)*W+84.87+9.80e-01*B*W)
pipes=1, drv=2 ((-3.04)*B+(-5.80)*W+87.52+9.86e-01*B*W)
Type Case Equation
Width pipes=0, drv=1 (2.03e-02*B+16.06*W+63.05+(-1.19e-03)*B*W)
pipes=0, drv=2 (2.03e-02*B+16.06*W+64.05+(-1.19e-03)*B*W)
pipes=1, drv=1 (2.03e-02*B+16.06*W+116.05+(-1.19e-03)*B*W)
pipes=1, drv=2 (2.03e-02*B+16.06*W+117.05+(-1.19e-03)*B*W)
Height pipes=0 (11.00*B+(-1.25e-09)*W+22.00+1.86e-11*B*W)
pipes=1 (11.00*B+(-1.08e-09)*W+33.00+1.55e-11*B*W)
6
PLL
Contents
PLL2013X ............................................................................................................................6-1
Samsung ASIC 6-1 STDM110
PLL2013X
Block Diagram
Figure 6-1 Phase Locked Loop Block Diagram
NOTE: X-tal oscillator and Lock detector are optional block. If customer concerns about this block - xtal buffer or lock
detector, refer to next chapter.
Charge FOUT
Pump
Pre-Divider
PPFD VCO Post Scaler
S
Main Divider
M
Loop
Filter
(External)
Fin
General Description
The PLL2013X is a Phase-Locked Loop (PLL) Fre-
quency Synthesizer constructed in CMOS on single
monolithic structure. The PLL macrofunctions pro-
vide frequency multiplication capabilities. The out-
put clock frequency Fout is related to the reference
input clock frequency Fin (XTALIN) by the following
equation:
Fout = (m × Fin) / (p × 2s)
Where, Fout is the output clock frequency. Fin is the
reference input clock frequency. m, p and s are the
values for programmable dividers. PLL2013X con-
sists of a Phase/Frequency Detector (PFD), a
Charge Pump, an External Loop Filter, a Voltage
Controlled Oscillator (VCO), a 6-bit Pre-divider, an
8-bit Main divider and a 2-bit Post Scaler as shown
in Figure 6-1
Features
• 0.25µm CMOS device technology
• 2.5V single power supply
• Output frequency range: 20-170MHz
• Jitter: ±150 ps at 170MHz
• Duty ratio: 45% to 55% (All tuned range)
• Frequency changed by programmable dividers
• Provision for 14.318MHz crystal oscillator
buffer (option)
• Lock detector (option)
• Power down mode
PLL2013X 20 MHz-170MHz FSPLL
STDM110 6-2 Samsung ASIC
Pin Description
Figure 6-2 Core Configuration
NAME I/O TYPE I/O PAD PIN DESCRIPTION
VDDD Digital Power vddd Digital power supply
VSSD Digital Ground vssd Digital ground
VDDA Analog Power vdda Analog power supply
VSSA Analog Ground vssa Analog ground
VBB Analog sub bias
/Digital sub bias vbba Analog / Digital sub bias
FIN Digital Input pic_bb Reference Frequency Input
FILTER Analog Output poa_bb Pump out is connected to Filter.
A capacitor is connected between the pin and analog ground.
FOUT Digital Output pot8_bb 20MHz~170MHz clock output
PWRDN Digital Input pic_bb FSPLL clock power down.
- When PWRDN is High, PLL do not operate.
- If PWRDN is not used, it should be tied to VSS.
P[5:0] Digital Input pic_bb The values for 6bit programmable pre-divider.
M[7:0] Digital Input pic_bb The values for 8bit programmable main divider.
S[1:0] Digital Input pic_bb The values for 2bit programmable post scaler.
FOUT
FILTER
M[7:0]
FIN
PWRDN
pll2013x
M[0]
M[1]
M[2]
M[3]
M[4]
M[5]
M[6]
M[7]
P[5:0] P[0]
P[1]
P[2]
P[3]
P[4]
P[5]
S[1:0] S[0]
S[1]
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-3 STDM110
Absolute Maximum Ratings (Ta=25°C)
NOTES
:
1. Absolute maximum rating specifies the values beyond which the device may be damaged permanently. Exposure
to absolute maximum rating conditions for extended periods may affect reliability. Each condition value is applied
with the other values kept within the following operating conditions and function operation under any of these
conditions is not implied.
2. All voltages are measured with respect to VSS unless otherwise specified.
3. 100pF capacitor is discharged through a 1.5kΩ resistor (human body model)
Recommended Operating Conditions
NOTE: It is strongly recommended that all the supply pins (VDDA, VDDD) be powered from the same operating supply
voltage to avoid power latch-up.
Characteristics Symbol Value Unit Applicable Pin
Supply voltage VDDD,
VDDA 3.3 V VDDD,VDDA,VSSD,
VSSA,VBB
Voltage on any digital pin Vin VSSD-0.25 to VDDD+0.25 V P[5:0],M[7:0],S[1:0]
PWRDN
Operating temperature Topr 0 to 70 °C-
Storage temperature Tstg -45 to 125 °C-
Characteristics Symbol Min Typ Max Unit
Supply voltage VDDD - VDDA -0.1 +0.1 V
Oscillator frequency Fosc 14.318 MHz
External loop filter capacitance LF 820 pF
Operating temperature Topr 0 70 °C
PLL2013X 20 MHz-170MHz FSPLL
STDM110 6-4 Samsung ASIC
DC Electrical Characteristics
AC Electrical Characteristics
NOTE: It is strongly recommended that input signal is not generated glitch, but if customer cannot help generating
glitch, customer must carefully considerate the specification.
Characteristics Symbol Min Typ Max Unit
Operating voltage VDDD/VDDA 2.375 2.5 2.625 V
Digital input voltage high VIH 2.0 V
Digital input voltage low VIL 0.8 V
Dynamic current Idd 3 mA
Power down current Ipd 50 µA
Characteristics Symbol Min Typ Max Unit
Crystal frequency FXTAL 14.318 MHz
Input Frequency FIN 5 40 MHz
Output clock frequency FOUT 20 170 Mhz
Input clock duty cycle TID 40 60 %
Output clock duty cycle
(at 170MHz) TOD 45 55 %
Input glitch pulse width TIGP 1ns
Locking time TLT 150 µs
Jitter, cycle to cycle TJCC -150 +150 ps
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-5 STDM110
Functional Description
A PLL is the circuit synchronizing an output signal (generated by an VCO) with a reference or input signal in
frequency as well as in phase.
In this application, it includes the following basic blocks.
— The voltage-controlled oscillator to generate the output frequency
— The divider P divides the reference frequency by p
— The divider M divides the VCO output frequency by m
— The divider S divides the VCO output frequency by s
— The phase frequency detector detects the phase difference between the reference frequency and the
output frequency (after division) and controls the charge pump voltage.
— The loop filter removes the high frequency components in charge pump voltage and gives smooth and
clean control to VCO
The m, p, s values can be programmed by 16bit digital data from the external source. So the PLL can be
locked in the desired frequency.
Fout = (m × Fin) / (p × s)
where
Fin = 14.318 MHz, m = M + 8, p = P + 2, s = 2S
Table 6-1 Digital Data Format
NOTES:
1. S[1]-S[0]: Output frequency scaler
2. M[7]-M[0]: VCO frequency divider
3. P[5]-P[0]: Reference frequency input divider
Main Divider Pre Divider Post Scaler
M7, M6, M5, M4, M3, M2, M1, M0 P5, P4, P3, P2, P1, P0 S1, S0
PLL2013X 20 MHz-170MHz FSPLL
STDM110 6-6 Samsung ASIC
OUTPUT FREQUENCY EQUATION & TABLE
Frequency equation:
Table 6-2 Example of Divider Ratio
CORE EVALUATION GUIDE
FortheembeddedPLL,wemustconsiderthetestcircuitsfortheembeddedPLLcoreinmultipleapplications.
Hence the following requirements should be satisfied.
— The FILTER and FOUT pins must be bypassed for external test.
— For PLL test (below 2 examples), it is needed to control the dividers - M[7:0], P[5:0] and S[1:0] -
that generate multiple clocks.
#1. Registers can be used for easy control of divider values.
#2. N sample bits of 16-bit divider pins can be bypassed for test using MUX.
Figure 6-3 PLL Functional Block Diagram
M7 M6 M5 M4 M3 M2 M1 M0 M m(M+8) S1 S0 2S
01010101 85 93 001
P6 P5 P4 P3 P2 P1 P0 P p(P+2)
010101042 44
FOUT M8+()
P2+()2s
×
-----------------------------FIN
×=
FOUT
FILTER
M[7:0]
FIN
PWRDN
pll2013x
P[5:0]
S[1:0]
External Clock Source
#1. 16-Bit
Register Block
#2. MUX
Select Pin
Test Pins of N Sample Bits
Internal Divider Signal Line
GND
2.5V Digital Power
GND
2.5V Analog Power
820pF
VSSA
VDDD VSSD VDDA VSSA VBB
: 10µF electronic capacitor, unless otherwise specified
: 104 ceramic capacitor, unless otherwise specified
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-7 STDM110
Figure 6-4 The example of PLL block with dedicated 14.318 MHz XTAL-OSC
XTAL Buffer Cell
Figure 6-5 XTAL PAD Symbol
- A XTAL Buffer cell for PLL is supported MDL111 databook of SEC
- The XTAL must be located between PADA and PADB.
Enable pin (E) must be HIGH in normal operation.
- PI pin must be connected to VDDD and the PO pin floated.
Lock Detector
Figure 6-6 Lock Detector Block
The built-in lock detector circuit will only work, when it is used in conjunction with PFD block output up/down
XTALIN
LDOUT FOUT
XTALOUT
Glue Logic
FILTER
MUX
XTAL
OSC Fin PFD
P[5:0]
LF
Divider
M
Scaler
S
M[7:0]
S[1:0]
Divider
PVCO
LD
& CP
up
down
PWRDN
* Optional Test Pin
*Divider Bus
E
PADA
PADB
PI
YN
PO
Internal Up Signal
Internal Down Signal
LS LDOUT
LO
Lock
State Detector
PLL2013X 20 MHz-170MHz FSPLL
STDM110 6-8 Samsung ASIC
signal. (refer to Figure 6-6)
We represent the output of lock detector in the timing diagram. (refer to Figure 6-7)
Figure 6-7 Lock Detector Timing Diagram
PACKAGE CONFIGURATION
Up/Down
LDOUT
LO
Lock
Unlock
pll2013x
48
47
44
46
45
43
42
41
40
39
38
37
36 35 34 33 3032 31 29 28 27 26 25
12 534 6789101112
P4
P5
TST3
TST1
TST2
NC
NC
NC
NC
LDOUT
VSSA
VSSA
24
23
20
22
21
19
18
17
16
15
14
13
NC
FOUT
VBB
NC
NC
VBB
PWRDN
FILTER
XTALOUT
XTALIN
VDDA
VDDA
P3
P2
M7
P1
P0
M6
M5
M4
M3
M2
M1
M0
VDDD
VDDD
VSSD
VSSD
S1
VDDO
VSSO
NC
NC
SO
TST4
TST5
LH
LH
LH
LH
LH
LH
LH
LH
LH
LH
LH
LH
8-bit Main Divider
6-bit Pre Divider Input
H
L
H
LC
2.5V Analog Power
C
H
L
H
LC
C
2.5V Digital Power 2-bit Post Scaler 2.5V I/O Power
HL
C
2.5V Analog Power
820pF
25pF
25pF
External
Source
Clock
C104
10µF
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-9 STDM110
PACKAGE PIN DESCRIPTION
NOTES:
1. I/O TYPE PP and PG denote PAD power and PAD ground respectively.
2. XTALIN, XTALOUT, LDOUT is test pin for PLL in Samsung.
NAME PIN No. I/O TYPE PIN DESCRIPTION
VDDD 35,36 DP Digital power supply
VSSD 33,34 DG Digital ground
VBB 19,20 AB/DB Analog / digital sub bias
PWRDN 18 DI FSPLL clock power down.
- When PWRDN is High, PLL do not operate.
- If PWRDN is not used, it should be tied to VSS.
P[0]~P[5] 45~48,1,2 DI Pre-divider input
VDDA 13,14 AP Analog power supply
VSSA 11,12 AG Analog ground
XTALIN 15 AI Crystal external clock input
XTALOUT 16 AO Xtal buffer output clock
FOUT 23 DO 20MHZ~170MHz clock output
LDOUT 10 DO Lock detector output
FILTER 17 AO Pump out is connected to the Filter. A 900pF Capacitor is con-
nected between the pin and analog pin
S[0]~S[1] 32,31 DI Post scaler input
M[0]~M[7] 37~44 DI 8-bit main divider input
VDDO 28 PP I/O pad power
VSSO 27 PG I/O pad power
PLL2013X 20 MHz-170MHz FSPLL
STDM110 6-10 Samsung ASIC
PLL Components
Figure 6-8 is the block diagram of the components of a PLL: the phase detector, charge pump, voltage con-
trolled oscillator, and loop filter.
In Samsung technology, the loop filter is implemented as external components close to the chip.
Figure 6-8 PLL Functional Block Diagram
■Phase detector:
The phase detector monitors the phase difference between the Fref and Fvco, and generates a control signal
when it detects difference between the two.
If the Fref frequency is higher then the Fvco frequency, its falling edge occurs before (lead) the falling edge
of the Fvco output. When this occurs the phase detector signals the VCO to increase the frequency of the
on-chip clock. If the falling edge of the Fref occurs after (lag) the falling edge of the Fvco output, the detector
signals the VCO to decrease on-chip clock frequency. Figure 6-9 illustrates the lead and lag conditions.
If the frequencies of the Fref and Fvco are the same, the detect or does not generate a control signal, so the
frequencies remain the same.
Figure 6-9 Lead and Lag Clocking Relationship
■Charge Pump:
The charge pump converts the phase detector control signal to a charge in voltage across the external filter
that drives the VCO. As the Voltage Controlled Oscillator decreases, or increases, If the voltage remains con-
stant, the frequency of the oscillator remains constant.
XTALIN PFD
XTALOUT
P[5:0]
PUMP
Voltage Controlled Oscillator
DIVIDER
M
DIVIDER
S
M[7:0]
S[1:0]
FILTER
R
C1 C2
R,C2: Internal
C1: External
DIVIDER
P
XTAL
OSC Fref
Fvco
FOUT PWRDN
Fref CLK
Fvco CLK
UP
DOWN
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-11 STDM110
■Loop Filter:
The control signal that the phase detector generates for the charge pump may generate large excursions (rip-
ples) each time the VCO output is compared to the system clock. To avoid overloading the VCO, a low pass
filter samples and filters the high-frequency components out of the control signal. The filter is typically a sin-
gle-pole RC filter consisting of a resistor and capacitor.
■Voltage Controlled Oscillator (VCO):
The output voltage from the loop filter drives the VCO, causing its oscillation frequency to increase or de-
crease as a function of variations in voltage. When the VCO output matches the system clock in frequency
and phase, the phase detector stops sending a control signal to the charge pump, which in turn stabilizes the
input voltage to the loop filter. The VCO frequency then remains constant, and the PLL remains locked onto
the system clock.
Frequency Synthesis
Frequency synthesis uses the system clock as a base frequency to generate higher/lower frequency clocks
for internal logic.
For high speed applications in high-end designs, transmission line effects cause problems because of para-
sitic and impedance mismatch among various on-board components. These problems can be eliminated by
moving the high frequency to the chip level. On-chip clocks that are faster than the external system clock can
be synthesized by inserting a divider in the feedback path. The divider is placed after voltage controlled os-
cillator, as illustrated in Figure 6-11. The signal is running at M times the system clock frequency, so the PLL
matches the divider signal output to the system clock. This configuration reduces the problem of interfacing
to the system clock on the board, and it reduces the noise generated by the system clock oscillator and driver
for all the components in the system.
Design Considerations
The following design considerations apply:
• Phase tolerance and jitter are independent of the PLL frequency.
• Jitter is affected by the noise frequency in the power (VDDD/VSSD, VDDA/VSSA).
It increases when the noise level increases.
• A CMOS-level input reference clock is recommend for signal compatibility with the PLL circuit. Other
levels such as TTL may degrade the tolerances.
• The used of two, or more PLLs requires special design considerations. Please consult your application
engineer for more information.
• The following apply to the noise level, which can be minimized by using good analog power and ground
isolation techniques in the system:
- Use wide PCB traces for POWER (VDDD/VSSD, VDDA/VSSA, VBB) connections to the PLL core.
- Separate the traces from the chip’s VDDD/VSSD, VDDA/VSSA supplies.
- Use proper VDDD/VSSD, VDDA/VSSA de-coupling.
- Use good power and ground sources on the board.
- Use power VBB for minimize substrate noise.
• The PLL core should be placed as close as possible to the dedicated loop filter and analog power and
ground pins.
• It is inadvisable to locate noise-generating signals, such as data buses and high-current outputs,
near the PLL I/O cells.
• Other related I/O signals should be placed near the PLL I/O but do not have any pre-defined placement
restriction.
20 MHz-170MHz FSPLL PLL2013X
Samsung ASIC 6-12 STDM110
PLL Specification
We appreciate your interest in our products. If you have further questions, please specify in the attached
form. Thank you very much.
• Do you need XTAL driver buffer in PLL core?
If you need it, what is the crystal frequency range?
If not, What is the input frequency range?
• Do you need the lock detector?
• Do you need the I/O cell of Samsung?
• Do you need the external pin for PLL test?
• What is the main frequency and frequency range?
• How many FSPLLs do you use in your system?
• What is output loading?
• Could you internal/external pin configurations as required?
• Specially requested function list:
Parameter Min Typ Max Unit Remarks
Supply voltage
Output frequency range
Input frequency range
Cycle-to-cycle jitter
Lock up time
Dynamic current
Standby current
Output clock duty ratio
Long term jitter
Output slew rate
