WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS70DW-04
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @TA=25
Parameter Symbol
Limits Unit
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 V
Forward Continuous Current IF 70 mA
Peak forward surge current @<1.0s IFSM 100 mA
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature TJ 125 ℃
Storage temperature range TSTG -55 to +125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
VF1 0.41 V IF=1mA
Forward voltage VF2
1 V IF=15mA
Reverse curre nt IR
100 nA VR=50V
Capacitance between terminals CT
2 pF VR=0V,f=1MHz
Reverse Recovery Time trr 5 ns IF=IR=10mA
Irr=0.1XIR,RL=100Ω
1
FBAS70DW-04
Marking:K74