MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJ802 Features * * With TO-3 package Complement to PNP MJ4502 NPN High Power Silicon Transistor TO-3 Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 90 V VCB Collector-Base Voltage 100 V VEB Emitter-Base Voltage 4.0 V Collector Current 30 A PD Collector power dissipation 200 W TJ Junction Temperature 200 TSTG Storage Temperature -65 to +200 IC A N E C K D U Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units V L H 2 1 OFF CHARACTERISTICS VCEO(SUS) ICBO IEBO Collector-Emitter sustaining Voltage* (IC=200mAdc, IB=0) Collector-Base Cutoff Current (VCB=100Vdc,IE=0) Emitter-Base Cutoff Current (VEB=4.0Vdc, IC=0) 90 --- Vdc --- 1.0 mAdc --- 5.0 25 100 G B Q PIN 1. PIN 2. CASE. mAdc BASE EMITTER COLLECTOR ON CHARACTERISTICS hFE VCE(sat) VBE(sat) Forward Current Transfer ratio* (IC=7.5Adc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (IC=7.5Adc, IB=0.75Adc) Base-Emitter Saturation Voltage (IC=7.5Adc, IB=0.75Adc) 0.8 Vdc 1.3 Vdc DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (VCE=10Vdc, IB=1.0Adc, f=1.0MHz) *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT DIMENSIONS INCHES 2.0 MHz DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE www.mccsemi.com Revision: 1 2003/04/21