NPN High Power
Silicon Transistor
Features
• With TO-3 package
•
Complement to PNP MJ4502
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 90 V
VCB Collector-Base Voltage 100 V
VEB Emitter-Base Voltage 4.0 V
IC Collector Current 30 A
PD Collector power dissipation 200 W
TJ Junction Temperature 200 ℃
TSTG Storage Temperature -65 to +200 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(SUS) Collector-Emitter sustaining Voltage*
(IC=200mAdc, IB=0) 90 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=100Vdc,IE=0) --- 1.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=4.0Vdc, IC=0) --- 5.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio*
(IC=7.5Adc, VCE=2.0Vdc) 25 100
VCE(sat) Collector-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc) 0.8 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc) 1.3 Vdc
DYNAMIC CHARACTERISTICS
fT Current Gain — Bandwidth Product
(VCE=10Vdc, IB=1.0Adc, f=1.0MHz) 2.0 MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
MJ802
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1 2003/04/21
TO-3
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
H
V
U
L
G
B
Q
1
2
TM
Micro Commercial Components
