2006-03-22
Page 1
ITS 4141D
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200mΩ
Features
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection
(including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Product Summary
Overvoltage protection Vbb
(
AZ
)
47 V
Operating voltage Vbb
(
on
)
12...45 V
On-state resistance RON 200 mΩ
Operating temperature Ta-30...+85 °C
PG-TO252-5-1
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
2006-03-22
Page 2
ITS 4141D
Block Diagram
IN
5Rin
+ Vbb
Signal GND
ESD
miniPROFET®
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
4
TAB/3
1
Load GND
Load
VLogic
Overvoltage
protection
Function
Output to the load
not connected
connected with TAB
Logic ground
Input, activates the power switch in case of logic high signal
Positive power supply voltage
Pin Symbol
1OUT
2NC
3Vbb
4GND
5IN
TAB Vbb
2006-03-22
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ITS 4141D
Maximum Ratings
Parameter
at Tj = 25°C, unless otherwise specified
Symbol Value Unit
Supply voltage Vbb -0,31)...48 V
Continuous input voltage2) VIN -10...Vbb
Load current (Short - circuit current, see page 5) ILself limited A
Current through input pin (DC) IIN ±5mA
Reverse current through GND-pin3) -IGND -0.5 A
Junction temperature Tjinternal limited °C
Operating temperature Ta-30...+85 °C
Storage temperature Tstg -40 ... +105 °C
Power dissipation 4) Ptot 1.4 W
Inductive load switch-off energy dissipation4)5)
single pulse
Tj = 125 °C, IL = 0.5 A
EAS 12 J
Load dump protection5) VLoadDump6)= VA + VS
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 47 Ω
VLoaddump
83
V
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
All other pins
VESD
±1
±5
kV
1defined by Ptot
2At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3defined by Ptot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
2006-03-22
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ITS 4141D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance @ 6 cm2 cooling area 1) Rth
(
JA
)
- - 60 K/W
Thermal resistance, junction - case RthJC - - 3 K/W
Load Switching Capabilities and Characteristics
On-state resistance
Tj = 25 °C, IL = 0.5 A
Tj = 125 °C
RON
-
-
150
270
200
320
mΩ
Nominal load current2)
Device on PCB 1)
IL(nom) 0.7 - - A
Turn-on time to 90% VOUT
RL = 47 Ω, VIN = 0 to 10 V
ton
- 50 100
µs
Turn-off time to 10% VOUT
RL = 47 Ω, VIN = 10 to 0 V
toff
- 75 150
Slew rate on 10 to 30% VOUT,
RL = 47 Ω, Vbb = 15 V
dV/dton
- 1 2
V/µs
Slew rate off 70 to 40% VOUT,
RL = 47 Ω, Vbb = 15 V
-dV/dtoff
- 1 2
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )
2006-03-22
Page 5
ITS 4141D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Operating Parameters
Operating voltage Vbb
(
on
)
12 - 45 V
Undervoltage shutdown Vbb
(
under
)
7 - 10.5
Undervoltage restart Vbb
(
u rst
)
- - 11
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under) - 0.5 -
Standby current
Tj = -40...85 °C, VIN ≤ 1,2 V
Tj = 125 °C1)
Ibb(off)
-
-
10
-
25
50
µA
Operating current IGND - 1 1.6 mA
Leakage output current (included in Ibb(off))
VIN ≤ 1,2 V
IL(off) - 3.5 10 µA
Protection Functions2)
Initial peak short circuit current limit
Tj = -40 °C, Vbb = 20 V, tm = 150 µs
Tj = 25 °C
Tj = 125 °C
IL(SCp)
-
-
0.7
-
1.4
-
2.1
-
-
A
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams)
IL(SCr) - 1.1 -
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), Ibb = 4 mA
VON(CL) 47 52 - V
Overvoltage protection 3)
Ibb = 4 mA
Vbb(AZ) 47 - -
Thermal overload trip temperature4) T
j
t135 - - °C
Thermal hysteresis ∆T
j
t- 10 - K
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3see also VON(CL) in circuit diagram
4 higher operating temperature at normal function available
2006-03-22
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ITS 4141D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Input
Continuous input voltage1) VIN -102) -Vbb V
Input turn-on threshold voltage VIN
(
T+
)
- - 3.0
Input turn-off threshold voltage VIN
T-
1.82 - -
Input threshold hysteresis ∆VIN
(
T
)
- 0.2 -
Off state input current
VIN ≤ 1,8 V
IIN(off)
20 - -
µA
On state input current IIN
(
on
)
- - 110
Input delay time at switch on Vbb td
(
Vbbon
)
150 340 - µs
Input resistance (see page 8) RI1.5 3 5 kΩ
Reverse Battery
Reverse battery voltage3)2)
RGND = 0 Ω
RGND = 150 Ω
-Vbb
-
-
-
-
0.3
45
V
Continuous reverse drain current2)
Tj = 25 °C
IS- - 1 A
Drain-source diode voltage (VOUT > Vbb)
IF = 1 A
-VON - 0.6 1.2 V
1At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
2not subject to production test, guaranted by design
3defined by Ptot
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ITS 4141D
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ;
Load: RL = 220Ω
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.: RGND
Fast electrical transients
Acc. ISO 7637
Test Pulse Test Level Test Results Pulse C
y
cle Time and
On Off Generator Im
p
edance
1 -200 V C C 500ms ; 10Ω
2 +200 V C C 500ms ; 10Ω
3a -200 V C C 100ms ; 50Ω
3b + 200 V C C 100ms ; 50Ω
41) -7 V C C 0,01Ω
5 175 V E
(
70V
)
E
(
70V
)
400ms ; 2Ω
The test pulses are applied at Vbb
Definition of functional status
Class Content
C All functions of the device are
p
erformed as desi
g
ned after ex
p
osure to disturbance.
E One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.
Test circuit:
PROFET
V
OUT
IN
bb
RL
Pulse
Bat.
RGND
GND
1Supply voltage Vbb = 12 V instead of 13,5 V.
2006-03-22
Page 8
ITS 4141D
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. Vbb-Pin Emission at DC-On with 150Ω-matching network
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0,1 1 10 100 1000
f / M H z
dBµV
150ohm Class6
150ohm Class1
VBB, noise floor
VBB, ON
150Ω / 8-H
150Ω / 13-N
Typ. Vbb-Pin Emission at PWM-Mode with 150 Ω-matching network
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0,1 1 10 100 1000
f / M H z
dBµV
150ohm Class6
150ohm Class1
VBB, noise floor
VBB, PW M
150Ω / 8-H
150Ω / 13-N
Test circuit:
PROFET
V
OUTIN
bb
R
5µH
5µH
150Ω-Network
GND
RGND
For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz)
is inserted between supply and Vbb-pin.
2006-03-22
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ITS 4141D
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection: Forward Power CW
Failure criteria: Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off
0
5
10
15
20
25
30
35
40
1 10 100 1000
f / M H z
dBm
Lim it
VBB, ON
VBB, OFF
D e vice : B TS 4 1 42
L o ad : 47 O hm s
O -M o de : O N / O F F / P W M
C o u plin g P o in t: V B B
M o n itorin g : O ut
M o d ula tio n : C W
Typ. Vbb-Pin Susceptibility at PWM-Mode
0
5
10
15
20
25
30
35
40
1 10 100 1000
f / M H z
dBm
Lim it
VBB, PW M
D e vice : B TS 4 142
L o ad : 4 7 O h m s
O -M o de: O N / O F F / P W M
C o u plin g P o in t: V B B
M o nitorin g : O u t
M o dula tio n : C W
Test circuit:
PROFET
V
OUT
IN
bb
R
L
HF
5µH
150Ω
6,8nF
5µH 150
Ω
6,8nF
GND
R
GND
For defined decoupling and high reproducibility the same choke and the same
150Ω -matching network as for the emission measurement is used.
2006-03-22
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ITS 4141D
Terms Inductive and overvoltage output clamp
+ Vbb
OUT
GND
VZ
VON
PROFET
V
IN OUT
GND
bb
VIN
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
RGND
VON clamped to 47 V min.
Input circuit (ESD protection)
Overvoltage protection of logic part
IN
GND
I
R
I
I
Vbb
+ Vbb
IN
GND
GND
R
Signal GND
Logic
VZ2
optional
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
VZ2=Vbb(AZ)
=47V min.,
RI=3 kΩ typ., RGND
=150Ω
Reverse battery protection
GND
Logic
IN
OUT
L
R
Power GND
GND
R
Signal GND
Power
In v e rs e
I
R
Vbb
-
Diode
optional
RGND=150Ω, RI=3kΩ typ.,
Temperature protection is not active during inverse
current
2006-03-22
Page 11
ITS 4141D
GND disconnect Inductive Load switch-off energy
dissipation
PROFET
V
IN OUT
GND
bb
Vbb VIN V
GND
PROFET
V
IN OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
RL
L
{
L
Z
GND disconnect with GND pull up
PROFET
V
IN OUT
GND
bb
Vbb VGND
VIN
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
E
IL
RVV
IR
V
AS
L
L
bb OUT CL
LL
OUT CL
=+ +
*
**( | )*ln( *
||
)
()|
()
21
Vbb disconnect with charged inductive
load
PROFET
V
IN OUT
GND
bb
Vbb
high
2006-03-22
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ITS 4141D
Typ. transient thermal impedance
ZthJA=f(tp) @ 6cm2 heatsink area
Parameter: D=tp/T
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1 10 2 10 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. transient thermal impedance
ZthJA=f(tp) @ min. footprint
Parameter: D=tp/T
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1 10 2 10 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. on-state resistance
RON = f(Tj) ; Vbb = 15 V ; Vin = high
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
50
100
150
200
mΩ
300
RON
Typ. on-state resistance
RON = f(Vbb); IL = 0.5A ; Vin = high
0 5 10 15 20 25 30 35 40 V50
Vbb
0
50
100
150
200
mΩ
300
RON
25°C
125°C
-40°C
2006-03-22
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ITS 4141D
Typ. turn on time
ton = f(Tj); RL = 47Ω
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
20
40
60
µs
100
ton
15V
30V
Typ. turn off time
toff = f(Tj); RL = 47Ω
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
20
40
60
80
µs
120
toff
15...30V
Typ. slew rate on
dV/dton = f(Tj) ; RL = 47 Ω
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V/µs
2
dV
dton
30V
15V
Typ. slew rate off
dV/dtoff = f(Tj); RL = 47 Ω
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
0.5
1
1.5
2
2.5
3
V/µs
4
-dV
dtoff
30V
15V
2006-03-22
Page 14
ITS 4141D
Typ. initial peak short circuit current limit
IL(SCp) = f(Tj) ; Vbb = 20 V; tm = 150 µs
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
2
IL(SCp)
Typ. initial short circuit shutdown time
toff(SC) = f(Tj,start) ; Vbb = 20V
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
100
200
300
400
500
600
700
800
ms
1000
toff(SC)
Typ. initial peak short circuit current limit
IL(SCp) = f(Vbb); tm = 150µs
0 5 10 15 20 25 30 35 40 V50
Vbb
0
0.25
0.5
0.75
1
1.25
1.5
A
2
IL(SCp)
25°C
125°C
-40°C
Typ. input current
IIN(on/off) = f(Tj); Vbb = 15 V; VIN = low/high
VINlow ≤ 1,8V; VINhigh = 5V
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
10
20
30
40
µA
60
IIN
off
on
2006-03-22
Page 15
ITS 4141D
Typ. input current
IIN = f(VIN); Vbb =15 V
0 2.5 5 7.5 10 12.5 15 V20
VIN
0
10
20
30
40
µA
60
IIN
25°C
125°C
-40°C
Typ. input threshold voltage
VIN(th) = f(Tj) ; Vbb = 15 V
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
0.5
1
1.5
2
V
3
VIN(th)
on
off
Typ. input threshold voltage
VIN(th) = f(Vbb) ; Tj = 25°C
0 10 20 30 V50
Vbb
0
0.5
1
1.5
2
V
3
VIN(th)
on
off
Typ. standby current
Ibb(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
2
4
6
8
10
12
14
16
18
µA
22
Ibb(off)
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Page 16
ITS 4141D
Maximum allowable inductive switch-off
energy, single pulse
EAS = f(IL); Tjstart = 125°C
0 0.2 0.4 0.6 0.8 1 A1.4
IL
0
5
10
15
20
J
30
EAS
Typ. input delay time at switch on Vbb
td(Vbbon) = f(Vbb)
0 5 10 15 20 25 30 35 40 V50
Vbb
0
50
100
150
200
250
300
µs
400
td(Vbbon)
Typ. leakage current
IL(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V
-40 -20 0 20 40 60 80 100 °C 140
Tj
0
0.5
1
1.5
2
2.5
3
µA
4
IL(off)
2006-03-22
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ITS 4141D
Timing diagrams
Figure 2b: Switching a lampFigure 1a: Vbb turn on:
IN
OUT
L
V
I
t
IN
V
L
t
I
bb
td(Vbbon)
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
t
VOUT
IL
t
t
on
off
90%
dV/dton
dV/dtoff
10%
IN
V
I
OUT
L
t
2006-03-22
Page 18
ITS 4141D
Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
IN
L
t
I
L(SCr)
I
VOUT
Output short to GND
normal
operation
IN
L
t
I
L(SCr)
I
IL(SCp)
VOUT
Output short to GND
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 5: Undervoltage shutdown and restart
Figure 4: Overtemperature:
Reset if Tj < Tjt
IN
OUT
J
t
V
T
IN
V
t
bb
td(Vbbon)
V
out
10,5V
td(Vbbon)
2006-03-22
Page 19
ITS 4141D
Package and ordering code
all dimensions in mm
Sales code ITS 4141D
Ordering code, SP000221235
GPT09161
5.4±0.1
-0.10
6.5+0.15
A
±0.5
9.9
6.22
-0.2
1
±0.1
±0.15
0.8
0.15 max
±0.1
per side 5x0.6
1.14
4.56
+0.08
-0.04
0.9
2.3-0.10
+0.05
B
0.51 min
±0.1
1
+0.08
-0.04
0.5
0...0.15
B
A0.25 M
0.1
All metal surfaces tin plated, except area of cut.
(4.17)
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.