BAT54/A/C/S
Vishay Semiconductors
1 (3)
Rev. 1, 01-Apr-99 www.vishay.com
Document Number 85508
Small Signal Schottky Barrier Diode
Features
D
Low Turn–on Voltage
D
Fast Switching
D
PN Junction Guard Ring for Transient
and ESD Protection
94 8550
Order Instruction
Type Type Differentiation Ordering Code Remarks
BAT54 VR = 30 V, Single Diode BAT54–GS08 Tape and Reel
BAT54A VR = 30 V, Common Anode BAT54A–GS08 Tape and Reel
BAT54C VR = 30 V, Common Cathode BAT54C–GS08 Tape and Reel
BAT54S VR = 30 V, Connected in Series BAT54S–GS08 Tape and Reel
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage=
Working peak reverse voltage=
DC Blocking voltage
VRRM=
VRWM=
VR30 V
Peak forward surge current tp<1s, on fiberglass substrate IFSM 600 mA
Repetitive peak forward current on fiberglass substrate IFRM 300 mA
Average forward current IFAV 100 mA
Forward current on fiberglass substrate IF200 mA
Power dissipation on fiberglass substrate Pd200 mW
Junction and storage tempera-
ture range Tj=Tstg –55...+125
°
C
Maximum Thermal Resistance
Tj = 25
_
CParameter Test Conditions Symbol Value Unit
Junction ambient RthJA 500 K/W
BAT54/A/C/S
Vishay Semiconductors
2 (3) Rev. 1, 01-Apr-99
www.vishay.com Document Number 85508
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.1mA, tp<300
m
s, duty cycle <2% VF240 mV
g
IF=1mA, tp<300
m
s, duty cycle <2% VF320 mV
IF=10mA, tp<300
m
s, duty cycle <2% VF400 mV
IF=30mA, tp<300
m
s, duty cycle <2% VF500 mV
IF=100mA, tp<300
m
s, duty cycle <2% VF1000 mV
Reverse current VR=25 V, tp<300
m
s, duty cycle <2% IR2
m
A
Breakdown voltage IR=100
m
A V(BR) 30 V
Diode capacitance VR=1 V, f=1MHz CD10 pF
Reverse recovery time IF=10mA through IR=10mA to
IR=1mA, RL=100
W
trr 5 ns
Dimensions in mm
14384
Case: SOT23, molded plastic
Terminals: Solderable per MIL–STD–202, Method 208
Polarity: see diagrams below
Mounting position: any
Approx. weight: 0.008 grams
BAT54
BAT54A, common anode
BAT54C, common cathode
BAT54S, connected in series
BAT54/A/C/S
Vishay Semiconductors
3 (3)
Rev. 1, 01-Apr-99 www.vishay.com
Document Number 85508
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
