NOTES : 1. 300us Pul se Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR1530CT thru 1560 CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maxim um DC Blocking Voltage
T
J
Operating Temperature Range
C
T
STG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R
0JC
C/W
C
J
Typical Junction Capacitance,
per element (Note 2) pF
I
R
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=125 C
mA
A
A
V
UNIT
V
V
FEATURES
Me tal of silicon rectifier,majority carrier conducton
Guard ring for tran s ient protection
Low power loss, high eff ici ency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequenc y inverters,free
wh elling,and polarity protection applications
MECHANICA L DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (N ot e 1) V
Voltage Rate of Change (Rated VR)
T
J
=125 C
T
J
=25 C
T
J
=125 C
@I
F
=7.5A
@I
F
=15A
@I
F
=15A
dv/dt
MBR
1540CT
40
28
40
MBR
1530 CT
30
21
30
MBR
1535 CT
35
24.5
35
MBR
1560CT
60
42
60
MBR
1550CT
50
35
50
MBR
1545CT
45
31.5
45
15
150
-55 to +150
-55 to +175
3.0
400
0.1
15
10000
0.57
0.84
0.72
0.65
0.90
0.80
1.0
50
TO-220AB
All Dimensions in millimet er
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67 9.6 5
2.54 3.43
6.86 5.8 4
8.2 6 9.28
- 6.35
12.70 14.73
0.5 1 2.79
N
M
L
K
J
I 1.14
2.2 9
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
Maxim um Average Forward RectifiedCurrent
at T
C
=125 C (See Fig.1)
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 15
Amperes
V/usV/usV/usV/us
SEMICONDUCTOR
LITE-ON
REV. 3, 13 -Sep -2001 , KTHC 0 2
RATING AND CHARACTERISTIC CURVES
M BR1530CT thr u MBR1560CT
PERCENT OF R ATED PEAK REVERSE VOLTAGE (% )
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
TJ= 125 C
0.01 TJ= 25 C
TJ= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARA CT ERISTI CS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
MBR1 5 30C T ~ MBR1 5 45CT
MBR1550CT ~ MBR1560CT
FIG.5 - TYPICAL JUNCTION CAPACITA NCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100 0.1 4
TJ= 25 C, f= 1MHz
FIG.2 - MAXIMUM NON-REPETIT IVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAG E F O RWARD CURRE NT
AMPERES
25
75 100 125 150
050
15
175
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
10
0
5
RESISTIVE OR
INDUCTIVE LO AD
CASE TEMPERATURE , C
RE V . 3 , 13 -Sep-2001, KT HC02