DSP25-16AR
1 2 3
Phase leg
Standard Rectifier
Part number
DSP25-16AR
Backside: isolated
FAV
F
V V1.16
RRM
25
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Diode for main rectification
For single and three phase
bridge configurations
ISOPLUS247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Backside: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
3600
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSP25-16AR
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.23
R1.5 K/W
R
min.
25
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
100 WT = 25°C
C
RK/W
25
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Unit
1.47
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
13.8 m
V1.16T = °C
VJ
I = A
F
V
25
1.50
I = A
F
50
I = A
F
50
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
10
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1600
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.3
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSP25-16AR
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
ISOPLUS®
XXXXXXXXX
DSP25-16AT TO-268AA (D3Pak) (2) 1600
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N120
mounting force with clip
20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
150-40
terminal to terminal
DSP25-12A
DSP25-12AT
TO-247AD (3)
TO-268AA (D3Pak) (2)
1200
1200
ISOPLUS247
Similar Part Package Voltage class
DSP25-16A TO-247AD (3) 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
DSP25-16AR 480355Tube 30DSP25-16ARStandard
3600
ISOL
T
stg
°C150
storage temperature
-40
3000
threshold voltage
V0.81
m
V
0 max
R
0 max
slope resistance *
11.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSP25-16AR
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except Lmax.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 5.45 BSC 0.215 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim.
Millimeter Inches
E
1 2 3
R
D
L
L1
Q
3x b
2x b2
b4
W
A
A2
c
A1
2x e
E1
D1
D2
D3
1 2 3
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSP25-16AR
0.001 0.01 0.1 1
100
200
3
00
2 3 4 5 6 7 8 9 011
10
1
10
2
10
3
0.5 1.0 1.5
0
10
20
30
40
50
6
0
0 5 10 15 20 25
0
10
20
30
40
0 50 100 150 200
0.0001 0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
20
40
60
80
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
V
R
= 0 V
I
F
[A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t
[A
2
s]
t [ms]
P
tot
[
W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJ
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fi
g
.
6
T
r
ans
i
ent
therma
l
i
m
ped
a
nc
e
ju
n
c
t
i
on
to
cas
e
t [ms]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.06075 0.0004
2 0.183 0.00256
3 0.3405 0.0045
4 0.543 0.0242
5 0.3728 0.15
T
VJ
= 25°C
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved