DATA SH EET
Product specification
Supersedes data of 2002 November 11 2003 Mar 13
DISCRETE SEMICONDUCTORS
BLF1043
UHF power LDMOS transistor
M3D438
2003 Mar 13 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
FEATURES
•Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA
– Output power = 10 W (PEP)
– Gain = 18.5 dB
– Efficiency = 40%
–d
im =−31 dBc
•Easy power control
•Excellent ruggedness
•High power gain
•Excellent thermal stability
•Designed for broadband operation (HF to 1000 MHz)
•No internal matching for broadband operation
•SMD package.
APPLICATIONS
•RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the 800 to
1000 MHz frequency range
•Broadcast drivers.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 1000 MHz.
PINNING - SOT538A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
2
3
1
Top view
MBK905
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, 2-tone, class-AB f1= 960; f2= 960.1 26 85 10 (PEP) 18.5 40 ≤−31
CW, 1-tone, class-AB f = 960 26 85 10 18.5 52 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 13 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC board
with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth j-h = 9 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±15 V
IDdrain current (DC) −2.2 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to heatsink Tmb =25°C; note 1 9 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.2 mA 65 −−V
V
GSth gate-source threshold voltage VDS =10V; I
D=20mA 4 −5V
I
DSS drain-source leakage current VGS = 0; VDS =26V −−1.5 µA
IDSX drain cut-off current VGS =V
GSth +9V; V
DS = 10 V 2.8 −−A
I
GSS gate leakage current VGS =±15 V; VDS =0 −−40 nA
gfs forward transconductance VDS =10V; I
D= 0.75 A −0.5 −S
RDSon drain-source on-state resistance VDS =10V; I
D= 0.75 A −1.05 −Ω
C
iss input capacitance VGS = 0; VDS =26V; f=1MHz −11 −pF
Coss output capacitance VGS = 0; VDS =26V; f=1MHz −9−pF
Crss feedback capacitance VGS = 0; VDS =26V; f=1MHz −0.5 −pF
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, 2-tone, class-AB f1= 960; f2= 960.1 26 85 10 (PEP) >16.5 >38 ≤−25
2003 Mar 13 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
handbook, halfpage
0
20
16
12
848 1612
MDB150
Gp
(dB)
PL (PEP)(W)
Gp
ηD
60
40
20
0
ηD
(%)
Fig.2 Power gain and efficiency as functions of
peak envelope load power; typical values.
Two-tone performance.
VDS = 26 V; IDQ = 85 mA; Th≤25 °C;
f1= 960 MHz; f2= 960.1 MHz.
handbook, halfpage
048 16
0
−20
−60
−80
−40
12
MDB151
dim
(dBC)
PL (PEP)(W)
d3
d5
d7
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
Two-tone performance.
VDS = 26 V; IDQ = 85 mA; Th≤25 °C;
f1= 960 MHz; f2= 960.1 MHz.
handbook, halfpage
0
22
18
14
10
70
50
30
10
42081216
MDB152
Gp
(dB) Gp
PL (W)
ηD
(%)
ηD
Fig.4 Power gain and efficiency as functions of
load power; typical values.
Single-tone performance.
VDS = 26 V; IDQ = 85 mA; Th≤25 °C;
f = 960 MHz.
handbook, halfpage
800 840 1000
6
2
−6
−10
−2
880 920 960
MDB148
Zi
(Ω)
f (MHz)
ri
Xi
Fig.5 Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL= 10 W; Th≤25 °C.
Impedance measured at reference planes; see Fig.7.
2003 Mar 13 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
handbook, halfpage
800
12
8
4
0840 1000
ZL
(Ω)
f (MHz)
RL
XL
880 920 960
MDB149
Fig.6 Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; Th≤25 °C.
Impedance measured at reference planes; see Fig.7.
handbook, halfpage
MGT002
reference planes
Fig.7 Measuring reference planes: SOT538A.
handbook, halfpage
MGS998
ZL
drain
gate
ZIN
Fig.8 Definition of transistor impedance.
2003 Mar 13 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
handbook, full pagewidth
MDB153
L2 R2 C11 C12
C7
C5
50 Ω output
50 Ω
input
VDS
VGS
C6
C2
C1
C8C4 C3
R1
C9 C10
L1
L3 L4 L6
L5 L7 L8 L9 L10
Fig.9 Class-AB test circuit for 960 MHz.
2003 Mar 13 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
List of components (see Figs 9 and 10)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr= 2.2); thickness
0.51 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C5 Tekelec variable capacitor 0.8 to 8 pF
C2, C3, C6, C7 multilayer ceramic chip capacitor; note 1 56 pF
C4, C10 tantalum SMD capacitor 10 µF; 35 V
C8 multilayer ceramic chip capacitor; note 1 1 nF
C9 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C11 multilayer ceramic chip capacitor; note 2 1 nF
C12 electrolytic capacitor 100 µF; 63 V 2222 037 58101
L1 3 turns enamelled 0.5 mm copper wire 3 loops; d = 3.5 mm
L2 ferrite bead; ferroxcube CBD4.6/3/3-4S2
L3 stripline; note 3 50 Ω3.5 ×1.5 mm
L4 stripline; note 3 50 Ω2×1.5 mm
L5 stripline; note 3 42 Ω5×2mm
L6 stripline; note 3 31 Ω13 ×3mm
L7 stripline; note 3 50 Ω10 ×1.5 mm
L8 stripline; note 3 65 Ω5.9 ×1mm
L9 stripline; note 3 50 Ω2×1.5 mm
L10 stripline; note 3 50 Ω3.5 ×1.5 mm
R1 metal film resistor 39 Ω, 0.6 W
R2 metal film resistor 10 Ω, 0.6 W 2322 256 11009
2003 Mar 13 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
handbook, full pagewidth
52.3
53.7
MDB154
C11
C12
C10
C4
C9
C3
C8
C7
L1
C5
C6
C2
C1
R2
R1
L2
VGS
VDS
BLF1043
Fig.10 Component layout for 960 MHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.51 mm.
The other side is unetched and serves as a ground plane.
2003 Mar 13 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT538A
A
Q
0 2.5 5 mm
scale
Ceramic surface mounted package; 2 leads SOT538A
UNIT cbD EHLQ α
α
w
1
mm 0.23
0.18
1.35
1.19 5.16
5.00
5.16
5.00
D1D2E1E2
4.65
4.50 4.14
3.99 7.49
7.24
4.14
3.99 7°
0°
0.25
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2.03
1.27 0.10
0.00
A
2.95
2.29
inches 0.009
0.007
0.053
0.047 0.203
0.197
0.203
0.197 0.183
0.177 0.163
0.157
3.63
3.48
0.143
0.137 0.295
0.285
0.163
0.157 7°
0°
0.010
0.080
0.050 0.004
0.000
z1
0.58
0.43
0.023
0.017
z2
0.25
0.18
0.010
0.007
z3
0.97
0.81
0.038
0.032
z4
0.51
0.00
0.020
0.000
0.116
0.090
00-03-03
02-08-20
HE
E2E1
c
b
L
D
D2
D1
z4 (4×)z2 (4×)
B
A
2
1
3
w1B
M M
z1 (4×)
z3 (4×)
2003 Mar 13 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Mar 13 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1043
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/07/pp12 Date of release: 2003 Mar 13 Document order number: 9397 750 10913
