Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj=125C Tvj=25C Tvj=-40C VCES 6500 6300 5800 V TC = 80 C IC,nom. 200 A TC = 25 C IC 400 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80C ICRM 400 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 3,8 kW VGES +/- 20V V IF 200 A IFRM 400 A I2t 26 k A2s Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values min. typ. max. - 4,3 4,9 V - 5,3 5,9 V VGE(th) 6,4 7,0 8,1 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 200A, VGE = 15V, Tvj = 25C VCE sat IC = 200A, VGE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 35mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V ... +15V QG - 2,8 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 28 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 6300V, VGE = 0V, Tvj = 25C VCE = 6500V, VGE = 0V, Tvj = 125C ICES - 0,2 20 - mA mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C IGES - - 400 nA prepared by: Dr. Oliver Schilling date of publication: 2002-08-30 approved by: Dr. Schutze 2002-08-30 revision/Status: Series 1 1 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Charakteristische Werte / Characteristic values min. typ. max. - 0,75 - s - 0,72 - s - 0,37 - s - 0,40 - s - 5,50 - s - 6,00 - s - 0,40 - s - 0,50 - s Eon - 1900 - mJ Eoff - 1200 - mJ ISC - 1000 - A - nH m Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, VCE = 3600V VGE = 15V, RGon = 13, CGE=22nF, Tvj = 25C, td,on VGE = 15V, RGon = 13, CGE=22nF, Tvj = 125C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 3600V VGE = 15V, RGon = 13, CGE=22nF, Tvj = 25C, tr VGE = 15V, RGon = 13, CGE=22nF, Tvj = 125C, Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, VCE = 3600V VGE = 15V, RGoff = 75, CGE=22nF, Tvj = 25C, td,off VGE = 15V, RGoff = 75, CGE=22nF, Tvj = 125C, Fallzeit (induktive Last) fall time (inductive load) IC = 200A, VCE = 3600V VGE = 15V, RGoff = 75, CGE=22nF, Tvj = 25C, tf VGE = 15V, RGoff = 75, CGE=22nF, Tvj = 125C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 200A, VCE = 3600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 200A, VCE = 3600V, VGE = 15V Kurzschluverhalten SC Data tP 10sec, VGE 15V, acc to appl.note 2002/05 Modulinduktivitat stray inductance module Zweig 1+2 / arm 1+2 Zweig 3 / arm 3 LsCE - 20 25 Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip Zweig 1+2 / arm 1+2 Zweig 3 / arm 3 RCC+EE - 0,18 0,37 - min. typ. max. 3,0 3,8 4,6 V 3,9 4,7 V - 270 - A - 330 - A - 180 - C - 350 - C - 220 - mJ - 550 - mJ RGon = 13, CGE=22nF, Tvj = 125C , L = 280nH RGoff = 75, CGE=22nF, Tvj = 125C , L = 280nH TVj125C, VCC=4400V, VCEmax=VCES -LCE *di/dt Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 200A, VGE = 0V, Tvj = 25C VF IF = 200A, VGE = 0V, Tvj = 125C IF = 200A, - diF/dt = 700A/s VR = 3600V, VGE = -10V, Tvj = 25C IRM VR = 3600V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 200A, - diF/dt = 700A/s VR = 3600V, VGE = -10V, Tvj = 25C Qr VR = 3600V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - diF/dt = 700A/s VR = 3600V, VGE = -10V, Tvj = 25C VR = 3600V, VGE = -10V, Tvj = 125C 2 http://store.iiic.cc/ Erec FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Thermische Eigenschaften / Thermal properties Transistor / transistor, DC Innerer Warmewiderstand thermal resistance, junction to case Diode/Diode, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per Module Paste 1 W/m*K / grease 1 W/m*K Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Schaltvorgange IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Lagertemperatur storage temperature min. typ. - - 0,033 K/W - - 0,063 K/W RthCK - 0,008 - K/W Tvj, max - - 150 C Tvj,op -40 - 125 C Tstg -40 - 125 C RthJC max. Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index >600 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube /screw M6 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Anschlusse / terminals M4 Anschlusse / terminals M8 Gewicht weight M 5 2 M G Nm 8 - 10 Nm 1000 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 450 400 25C 125C 350 IC [A] 300 250 200 150 100 50 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE), VGE= < see inset > Tvj = 125C 450 400 IC [A] 20V 350 15V 300 10V 12V 250 200 150 100 50 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] 4 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 10V 450 400 25C 350 125C IC [A] 300 250 200 150 100 50 0 5 6 7 8 9 10 11 12 13 14 15 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 450 400 25C 125C 350 IF [A] 300 250 200 150 100 50 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 VF [V] 5 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) RGon=13, RGoff=75, CGE = 22nF, VGE=15V, VCE = 3600V, Tvj = 125C, 5500 5000 4500 Eon Eoff E [mJ] 4000 Erec 3500 3000 2500 2000 1500 1000 500 0 0 50 100 150 200 250 300 350 400 450 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 200A , VCE = 3600V , VGE=15V, CGE=22nF , Tvj = 125C 4000 3600 Eon 3200 Eoff Erec E [mJ] 2800 2400 2000 1600 1200 800 400 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 RG [] 6 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) RG,off = 75, CGE=22nF, VGE=15V, Tvj= <see inset>, VCC <=4400V 450 400 350 300 IC [A] Tvj=125C 250 Tvj=25C 200 150 100 50 0 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 VCE [V] (at auxiliary terminals) Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Pmax = 600kW ; Tvj= 125C 450 400 350 IR [A] 300 250 200 150 100 50 0 0 1000 2000 3000 4000 5000 6000 VR [V] (at auxiliary terminals) 7 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [s] i 1 2 3 4 ri [K/kW] : IGBT 14,85 8,25 1,98 7,92 i [s] : IGBT 0,030 0,10 0,30 1,0 ri [K/kW] : Diode 28,35 15,75 3,78 15,12 i [s] : Diode 0,030 0,10 0,30 1,0 8 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 200 R 65 KF1-K IGBT-Module IGBT-Modules Auere Abmessungen / extenal dimensions Anschlusse / Terminals siehe Anschlussschaltbild oben / see cuircuit diagram above 9 http://store.iiic.cc/ FD 200 R65 KF1-K (final 1).xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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