FD200R65KF1-K - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Tvj=125°C

Tvj=25°C

Tvj=-40°C

VCES

6500

6300

5800

V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 200 A

DC-collector current TC = 25 °C IC 400 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 400 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 3,8 kW

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF 200 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 400 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 26 k A2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV

Teilentladungs Aussetzspannung

partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 200A, VGE = 15V, Tvj = 25°C VCE sat - 4,3 4,9 V

collector-emitter saturation voltage IC = 200A, VGE = 15V, Tvj = 125°C - 5,3 5,9 V

Gate-Schwellenspannung

gate threshold voltage IC = 35mA, VCE = VGE, Tvj = 25°C VGE(th) 6,4 7,0 8,1 V

Gateladung

gate charge VGE = -15V ... +15V QG - 2,8 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 28 - nF

Kollektor-Emitter Reststrom

collector-emitter cut-off current

VCE = 6300V, VGE = 0V, Tvj = 25°C

VCE = 6500V, VGE = 0V, Tvj = 125°C ICES -0,2

20 - mA

mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA

prepared by: Dr. Oliver Schilling date of publication: 2002-08-30

approved by: Dr. Schütze 2002-08-30 revision/Status: Series 1

1 FD 200 R65 KF1-K (final 1).xls

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 200A, VCE = 3600V

turn on delay time (inductive load) VGE = ±15V, RGon = 13Ω, CGE=22nF, Tvj = 25°C, td,on - 0,75 - µs

VGE = ±15V, RGon = 13Ω, CGE=22nF, Tvj = 125°C, - 0,72 - µs

Anstiegszeit (induktive Last) IC = 200A, VCE = 3600V

rise time (inductive load) VGE = ±15V, RGon = 13Ω, CGE=22nF, Tvj = 25°C, tr - 0,37 - µs

VGE = ±15V, RGon = 13Ω, CGE=22nF, Tvj = 125°C, - 0,40 - µs

Abschaltverzögerungszeit (ind. Last) IC = 200A, VCE = 3600V

turn off delay time (inductive load) VGE = ±15V, RGoff = 75Ω, CGE=22nF, Tvj = 25°C, td,off - 5,50 - µs

VGE = ±15V, RGoff = 75Ω, CGE=22nF, Tvj = 125°C, - 6,00 - µs

Fallzeit (induktive Last) IC = 200A, VCE = 3600V

fall time (inductive load) VGE = ±15V, RGoff = 75Ω, CGE=22nF, Tvj = 25°C, tf - 0,40 - µs

VGE = ±15V, RGoff = 75Ω, CGE=22nF, Tvj = 125°C, - 0,50 - µs

Einschaltverlustenergie pro Puls IC = 200A, VCE = 3600V, VGE = ±15V

turn-on energy loss per pulse RGon = 13Ω, CGE=22nF, Tvj = 125°C , Lσ = 280nH Eon - 1900 - mJ

Abschaltverlustenergie pro Puls IC = 200A, VCE = 3600V, VGE = ±15V

turn-off energy loss per pulse RGoff = 75Ω, CGE=22nF, Tvj = 125°C , Lσ = 280nH Eoff - 1200 - mJ

Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05

SC Data TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt ISC - 1000 - A

Modulinduktivität

stray inductance module

Zweig 1+2 / arm 1+2

Zweig 3 / arm 3 LsCE - 20

25 - nH

Modulleitungswiderstand, Anschlüsse - Chip

module lead resistance, terminals - chip

Zweig 1+2 / arm 1+2

Zweig 3 / arm 3 RCC´+EE´ - 0,18

0,37 - mΩ

Diode / Diode min. typ. max.

Durchlaßspannung IF = 200A, VGE = 0V, Tvj = 25°C VF 3,0 3,8 4,6 V

forward voltage IF = 200A, VGE = 0V, Tvj = 125°C 3,9 4,7 V

Rückstromspitze IF = 200A, - diF/dt = 700A/µs

peak reverse recovery current VR = 3600V, VGE = -10V, Tvj = 25°C IRM - 270 - A

VR = 3600V, VGE = -10V, Tvj = 125°C - 330 - A

Sperrverzögerungsladung IF = 200A, - diF/dt = 700A/µs

recovered charge VR = 3600V, VGE = -10V, Tvj = 25°C Qr - 180 - µC

VR = 3600V, VGE = -10V, Tvj = 125°C - 350 - µC

Abschaltenergie pro Puls IF = 200A, - diF/dt = 700A/µs

reverse recovery energy VR = 3600V, VGE = -10V, Tvj = 25°C Erec - 220 - mJ

VR = 3600V, VGE = -10V, Tvj = 125°C - 550 - mJ

2 FD 200 R65 KF1-K (final 1).xls

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

Thermische Eigenschaften / Thermal properties

min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,033 K/W

thermal resistance, junction to case Diode/Diode, DC - - 0,063 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro Modul / per Module

λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K RthCK - 0,008 - K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj, max - - 150 °C

Betriebstemperatur Sperrschicht

junction operation temperature

Schaltvorgänge IGBT(RBSOA);Diode(SOA)

switching operation IGBT(RBSOA);Diode(SOA) Tvj,op -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation AlN

Kriechstrecke

creepage distance 56 mm

Luftstrecke

clearance 26 mm

CTI

comperative tracking index >600

Anzugsdrehmoment f. mech. Befestigung Schraube /screw M6 M 5 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse Anschlüsse / terminals M4 2

terminal connection torque Anschlüsse / terminals M8 8 - 10 Nm

Gewicht

weight G 1000 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

M

3 FD 200 R65 KF1-K (final 1).xls

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

I

C[A]

VCE [V]

I

C[A]

VCE [V]

0

50

100

150

200

250

300

350

400

450

0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0

25°C

125°C

Ausgangskennlinie (typisch) I

C = f (VCE)

Output characteristic (typical) VGE = 15V

0

50

100

150

200

250

300

350

400

450

0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0

20V

15V

12V

10V

Ausgangskennlinienfeld (typisch) I

C = f (VCE), VGE= < see inset >

Output characteristic (typical) Tvj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

I

C[A]

VGE [V]

I

F[A]

VF [V]

0

50

100

150

200

250

300

350

400

450

5 6 7 8 9 10 11 12 13 14 15

25°C

125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 10V

0

50

100

150

200

250

300

350

400

450

0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0

25°C

125°C

Durchlaßkennlinie der Inversdiode (typisch) I

F = f (VF)

Forward characteristic of inverse diode (typical)

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

E [mJ]

IC [A]

E [mJ]

RG [Ω]

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

0 50 100 150 200 250 300 350 400 450

Eon

Eoff

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) RGon=13Ω, RGoff=75Ω, CGE = 22nF, VGE=±15V, VCE = 3600V, Tvj = 125°C,

0

400

800

1200

1600

2000

2400

2800

3200

3600

4000

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

Eon

Eoff

Erec

Schaltverluste (typisch) E

on = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) IC = 200A , VCE = 3600V , VGE=±15V, CGE=22nF , Tvj = 125°C

6 FD 200 R65 KF1-K (final 1).xls

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

I

C[A]

VCE [V] (at auxiliary terminals)

I

R[A]

VR [V] (at auxiliary terminals)

0

50

100

150

200

250

300

350

400

450

2000 2500 3000 3500 4000 4500 5000 5500 6000 6500

Tvj=125°C

Tvj=25°C

0

50

100

150

200

250

300

350

400

450

0 1000 2000 3000 4000 5000 6000

Sicherer Arbeitsbereich Diode (SOA)

safe operation area Diode (SOA) Pmax = 600kW ; Tvj= 125°C

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) RG,off = 75Ω, CGE=22nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

t [s]

i 1 2 3 4

ri [K/kW] : IGBT 14,85 8,25 1,98 7,92

τi [s] : IGBT 0,030 0,10 0,30 1,0

ri [K/kW] : Diode 28,35 15,75 3,78 15,12

τi [s] : Diode 0,030 0,10 0,30 1,0

Z

thJC [K / W]

0,001

0,01

0,1

0,001 0,01 0,1 1 10 100

Zth:Diode

Zth:IGBT

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FD 200 R 65 KF1-K

Äußere Abmessungen /

extenal dimensions

Anschlüsse / Terminals siehe Anschlussschaltbild oben / see cuircuit diagram above

9 FD 200 R65 KF1-K (final 1).xls

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Attention

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warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

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You and your technical departments will have to evaluate the suitability of the

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excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

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Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

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