MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector-Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter-Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO Value COLLECTOR 3 Unit Vdc 30 40 1 BASE Vdc 60 75 2 EMITTER Vdc 5.0 6.0 3 Collector Current - Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C 1 Symbol Max Unit 2 PD 225 mW SOT-23 CASE 318 STYLE 6 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C MARKING DIAGRAM xxx M Thermal Resistance Junction to Ambient RJA 417 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. xxx = Specific Device Code = (M1B = MMBT2222LT1, = 1P = MMBT2222ALT1) M = Date Code ORDERING INFORMATION Device Package Shipping MMBT2222LT1 SOT-23 3000/Tape & Reel MMBT2222ALT1 SOT-23 3000/Tape & Reel MMBT2222LT3 SOT-23 10,000/Tape & Reel MMBT2222ALT3 SOT-23 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 July, 2001 - Rev. 2 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 - - Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX - 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 60 Vdc, IE = 0, TA = 125C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO - - - - 0.01 0.01 10 10 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO - 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL - 20 nAdc 35 50 75 35 100 50 30 40 - - - - 300 - - - MMBT2222 MMBT2222A - - 0.4 0.3 MMBT2222 MMBT2222A - - 1.6 1.0 MMBT2222 MMBT2222A - 0.6 1.3 1.2 MMBT2222 MMBT2222A - - 2.6 2.0 ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) hFE MMBT2222A only MMBT2222 MMBT2222A Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) - VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 Vdc MMBT2222LT1, MMBT2222ALT1 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 250 300 - - - 8.0 - - 30 25 2.0 0.25 8.0 1.25 - - 8.0 4.0 50 75 300 375 5.0 25 35 200 - 150 - 4.0 Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo pF MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222A k X 10-4 hre hfe - mhos hoe rb, Cc ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td - 10 tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts - 225 tf - 60 ns ns 2. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 +16 V 0 < 2 ns 1 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1k 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 3 200 CS* < 10 pF MMBT2222LT1, MMBT2222ALT1 hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 4 3.0 20 30 50 MMBT2222LT1, MMBT2222ALT1 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 300 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C Figure 9. Capacitances 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 5 MMBT2222LT1, MMBT2222ALT1 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -2.5 500 1.0 k 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 6 500 MMBT2222LT1, MMBT2222ALT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 7 MMBT2222LT1, MMBT2222ALT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Thermal Clad is a registered trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MMBT2222LT1/D