SKM 195GB126DN Absolute Maximum Ratings Symbol Conditions IGBT # #12 4 6 . 0 SEMITRANSTM 2N Trench IGBT Module SKM 195GB126DN () ./,0 * + 7'1$#78 9 Features ! " # Typical Applications $ % &' % Values Units +(,, ((, .+!,0 3,, 5 (, : ;, <<< = +), .+()0 $ $ * ;,,, (,, .+!,0 3,, $ $ +;), $ (,, .+!,0 ;;, .3(,0 $ $ +;), $ $ + < Inverse diode #> #>12 () ./,0 * + #> 2 +, ? <? 6 +), * Freewheeling diode #> #>12 () ./,0 * () ./,0 * + #> 2 +, ? <? 6 +), * SKM 195GAL126DN Preliminary Data () * % Characteristics Symbol Conditions IGBT 4.0 # .70 4 # ! $ 4 , 6 () .+()0 * 6 () .+()0 * 4 +) 6 () .+()0 * . 0 # +), $ 4 +) D % % 4 , () + 2C 1E=E < : () .+()0 * %. 0 %.0 !,, # +), $ 14 14 ) B 6 +() * 4 5 +) () * % min. ) typ. max. )/ ,( + ., @0 ; A .A 30 !) ,! + +) !A + A .(0 ( +) () > > > +, ) ,@ ,/ .0 Units $ B , A) .+0 B 3,, ;, )!, +,, +! .(+0 F Inverse diode > .70 #112 G #> +), $? 4 , ? 6 () .+()0 * 6 () .+()0 * 6 () .+()0 * #> +), $? 6 +() . 0 * %H% (,,, $HI 4 , + ! .+ !0 + ., /0 ; .) 30 (,, 33 + / .+ /0 + + ., @0 ; A .!0 +; ) B $ I F FWD > .70 #112 G #> +), $? 4 , 6 () .+()0 * 6 () .+()0 * 6 () .+()0 * #> +), $? 6 +() . 0 * %H% (,,, $HI 4 , + ! .+ !0 + ., /0 ; .) 30 (,, 33 + / .+ /0 + + ., @0 ; A .!0 +; ) B $ I F Thermal characteristics 1.6:0 1.6:0M 1.6:0>M #4J # M% >LM , +! , 3( , 3( KHL KHL KHL 1.: 0 % , ,) KHL ) ) 8 8 +!, Mechanical data GB 1 GAL 2 2 N 2! 2) 14-06-2005 SEN 3 () (c) by SEMIKRON SKM 195GB126DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN (c) by SEMIKRON SKM 195GB126DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN (c) by SEMIKRON SKM 195GB126DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm 4J M @3 4$D M @3 M @3 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN (c) by SEMIKRON