IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800 Wesentliche Merkmale Features * Infrarot LED mit hoher Ausgangsleistung * Anode galvanisch mit dem Gehauseboden verbunden * Kurze Schaltzeiten * Sehr hohe Strahldichte * Anwendungsklasse nach DIN 40 040 GQG * * * * * Anwendungen Applications * Sensorik * Lichtgitter * Sensor technology * Light curtains Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. High Power Infrared LED Anode is electrically connected to the case Short switching times Very high radiance DIN humidity category in acc. with DIN 40 040 GQG Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4850 E7800 Q65110A2093 4 (typ. 7) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2009-05-14 1 SFH 4850 E7800 Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg - 40 ... + 80 C Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 200 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 1.5 A Verlustleistung Power dissipation Ptot 470 mW Warmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Warmewiderstand Sperrschicht - Gehause Thermal resistance junction - case RthJA 450 K/W RthJC 160 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 860 nm Centroid-Wellenlange der Strahlung Centroid wavelength IF = 100 mA centroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 42 nm Abstrahlwinkel Half angle 23 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm Kennwerte (TA = 25 C) Characteristics 2009-05-14 2 SFH 4850 E7800 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for A reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 50 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2009-05-14 3 SFH 4850 E7800 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values SFH 4850 E7800 -P SFH 4850 E7800 -Q Einheit Unit Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 4 8 6.3 12.5 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ 45 55 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 1.1 mm; Abstand Lochblende zu Gehauseruckseite: 4,0 mm). Dadurch wird sichergestellt, dass bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses der Anwendung entsprechende Messverfahren ergibt sich fur die Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. 1) Only one group in one packing unit, (variation lower 2:1) An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by 'E 7800' added to the type designation. 2009-05-14 4 SFH 4850 E7800 Relative Spectral Emission Irel = f () Single pulse, tp = 20 s OHF04135 100 OHL01715 101 Ie % I rel Ie = f (IF) Ie 100 mA Radiant Intensity Max. Permissible Forward Current IF = f (TA) OHF02644 250 I F mA I e (100 mA) 80 200 100 5 RthJC = 160 K/W 60 150 10-1 5 40 100 10 20 0 700 5 750 800 50 10-3 0 10 nm 950 850 5 10 1 5 10 2 mA 10 3 IF Forward Current IF = f (VF) Single pulse, tp = 20 s IF 10 A IF OHF02645 104 mA t tP IF D = TP T D= 10 -1 103 5 0.005 0.01 0.02 0.05 0.1 0.2 10 -2 0.5 5 102 1 10 -3 5 10 -4 0 0.5 1 1.5 2 2.5 V 3 VF 101 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 2009-05-14 5 0 0 20 40 60 80 C 100 T Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter OHL01713 0 RthJA = 450 K/W -2 SFH 4850 E7800 Mazeichnung Package Outlines 1 o4.1 (0.161) o4.3 (0.169) o0.45 (0.018) 2.54 (0.100) spacing 3) .0 04 5) ( 03 1.1 (0. 0.9 Chip position 2.7 (0.106) 0.9 1.1 (0 (0 .04 .03 2 5) 14.5 (0.571) 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) 3) o5.5 (0.217) o5.2 (0.205) GETY6625 Mae in mm (inch) / Dimensions in mm (inch). Gehause / Package 18 A3 DIN 41870 (TO-18), Bodenplatte, klares Epoxy-Gieharz, Anschlusse im 2.54-mm-Raster (1/10") 18 A3 DIN 41870 (TO-18), clear epoxy resin, lead spacing 2.54-mm(1/10") Anschlussbelegung Pin configuration 1 = Kathode / cathode 2 = Anode / anode Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 OHR01457 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2009-05-14 0.8 0.6 0.4 0 20 40 60 80 6 100 120 SFH 4850 E7800 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Leibnizstrae 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-05-14 7