BC856ALT1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2003

February, 2003 - Rev. 7 Publication Order Number:

BC856ALT1/D

BC856ALT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage BC856

BC857

BC858, BC859

VCEO -65

-45

-30

Collector-Base Voltage BC856

BC857

BC858, BC859

VCBO -80

-50

-30

Emitter-Base Voltage VEBO -5.0 V

Collector Current - Continuous IC-100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Resistance,

Junction to Ambient RJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance,

Junction to Ambient RJA 417 °C/W

Junction and Storage Temperature TJ, Tstg - 55 to

+150 °C

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT-23

CASE 318

STYLE 6

MARKING DIAGRAM

xx = Device Code

= (See Table Below)

M = Date Code

xx M

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

BASE

EMITTER

Device Package Shipping

ORDERING INFORMATION

BC856ALT1 SOT-23 3000/Tape & Reel

BC856ALT3 SOT-23 10,000/Tape & Reel

BC856BLT1 SOT-23 3000/Tape & Reel

BC856BLT3 SOT-23 10,000/Tape & Reel

BC857ALT1 SOT-23 3000/Tape & Reel

BC857BLT1 SOT-23 3000/Tape & Reel

BC857BLT3 SOT-23 10,000/Tape & Reel

BC858ALT1 SOT-23 3000/Tape & Reel

BC858BLT1 SOT-23 3000/Tape & Reel

Mark

BC858BLT3 SOT-23 10,000/Tape & Reel

BC858CLT1 SOT-23 3000/Tape & Reel

BC858CLT3 SOT-23 10,000/Tape & Reel

BC859BLT1 SOT-23 3000/Tape & Reel

BC859CLT1 SOT-23 3000/Tape & Reel

BC857CLT1 SOT-23 3000/Tape & Reel3G

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BC859BLT3 SOT-23 10,000/Tape & Reel4B

BC859CLT3 SOT-23 10,000/Tape & Reel4C

ORDERING INFORMATION

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector- Emitter Breakdown Voltage BC856 Series

(IC = -10 mA) BC857 Series

BC858, BC859 Series

V(BR)CEO -65

-45

-30

Collector- Emitter Breakdown Voltage BC856 Series

(IC = -10 µA, VEB = 0) BC857A, BC857B Only

BC858, BC859 Series

V(BR)CES -80

-50

-30

Collector- Base Breakdown Voltage BC856 Series

(IC = -10 A) BC857 Series

BC858, BC859 Series

V(BR)CBO -80

-50

-30

Emitter- Base Breakdown Voltage BC856 Series

(IE = -1.0 A) BC857 Series

BC858, BC859 Series

V(BR)EBO -5.0

-5.0

Collector Cutoff Current (VCB = -30 V)

Collector Cutoff Current (VCB = -30 V, TA = 150°C) ICBO -

--15

-4.0 nA

µA

ON CHARACTERISTICS

DC Current Gain BC856A, BC857A, BC858A

(IC = -10 µA, VCE = -5.0 V) BC856B, BC857B, BC858B

BC857C, BC858C

(IC = -2.0 mA, VCE = -5.0 V) BC856A, BC857A, BC858A

BC856B, BC857B, BC858B, BC859B

BC857C, BC858C, BC859C

hFE -

125

220

420

150

270

180

290

520

250

475

800

Collector- Emitter Saturation Voltage

(IC = -10 mA, IB = -0.5 mA)

(IC = -100 mA, IB = -5.0 mA)

VCE(sat) -

--0.3

-0.65

Base- Emitter Saturation Voltage

(IC = -10 mA, IB = -0.5 mA)

(IC = -100 mA, IB = -5.0 mA)

VBE(sat) -

--0.7

-0.9 -

Base- Emitter On Voltage

(IC = -2.0 mA, VCE = -5.0 V)

(IC = -10 mA, VCE = -5.0 V)

VBE(on) -0.6

--0.75

-0.82

SMALL- SIGNAL CHARACTERISTICS

Current- Gain - Bandwidth Product

(IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) fT100 - - MHz

Output Capacitance

(VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF

Noise Figure

(IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

BC856, BC857, BC858 Series

BC859 Series

-10

4.0

BC856ALT1 Series

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BC857/BC858/BC859

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base-Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2 −10 −100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100

IC = −200 mAIC = −50 mAIC =

−10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current-Gain - Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

VCE = −10 V

TA = 25°C

1.0

BC856ALT1 Series

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BC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

−0.8

−1.0

−0.6

−0.2

−0.4

1.0

2.0

−0.1 −1.0 −10 −200

−0.2

0.2

0.5

−0.2 −1.0 −10 −200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = −5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base-Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

−0.2 −2.0 −10 −200

−1.0

TJ = 25°C

IC =

−10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = −5.0 V

TA = 25°C

0−0.5 −2.0 −5.0 −20 −50 −100

−0.05 −0.2 −0.5 −2.0 −5.0

−100 mA

−20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

−0.5 −5.0 −20 −50 −100

−55°C to 125°C

θVB for VBE

−2.0 −5.0 −20 −50 −100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current-Gain - Bandwidth Product

IC, COLLECTOR CURRENT (mA)

−0.1 −0.2 −1.0 −50

2.0 −2.0 −10 −100

100

200

500

6.0

4.0

−1.0 −10 −100

VCE = −5.0 V

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT

−0.5 −5.0 −20

TJ = 25°C

Cob

Cib

8.0

−50 mA −200 mA

BC856ALT1 Series

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Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−200

−1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZθJC(t) = r(t) RθJC

RθJC = 83.3°C/W MAX

ZθJA(t) = r(t) RθJA

RθJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

−100

−50

−10

−5.0

−2.0

−5.0 −10 −30 −45 −65 −100

1 s

BC558, BC559

BC557

BC556

The safe operating area curves indicate IC-VCE limits of

the transistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or

TA is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)

may be calculated from the data in Figure 13. At high case or

ambient temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by the secondary breakdown.

BC856ALT1 Series

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The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 225 milliwatts.

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT-23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

PD = TJ(max) - TA

RθJA

PD = 150°C - 25°C

556°C/W = 225 milliwatts

The power dissipation of the SOT-23 is a function of th e

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

mined b y T J(max), the maximum rated junction temperature

of the die, RθJA, the thermal resistance from the device

junction to ambient, and the operating temperature, TA.

Using the values provided on the data sheet for the SOT-23

package, PD can be calculated as follows:

The 556°C/W for the SOT-23 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 225 milli-

watts. There are other alternatives to achieving higher

power dissipation from the SOT-23 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the

rated temperature of the device. When the entire device is

heated to a high temperature, failure to complete soldering

within a short time could result in device failure. There-

fore, the following items should always be observed in

order to minimize the thermal stress to which the devices

are subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference shall be a maximum of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

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PACKAGE DIMENSIONS

SOT-23

(TO-236)

CASE 318-08

ISSUE AH

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

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2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: 81-3-5773-3850

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BC856ALT1/D

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