LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 1 of 6
2N3418U4 thru 2N3421U4
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, J AN TX an d
JANTXV
DESCRIPTION
This family of high-frequency, ep it axial pl anar transistor s feat ur e low saturation vo lt age. The
U4 pac kage is hermeticall y sealed an d pr ovides a low pr ofile for mini mizing boar d hei ght.
These de vices are also availabl e in TO-5 and TO-39 pack ages. Micr osemi al so offer s
numerous other transist or pr oduct s t o m eet hi gher and l ower power rat i ngs with various
switching speed requirements in both through-hol e and surface-mount pac kages.
U4 Package
A lso a vailable in:
TO-5 pa ck age
(leaded)
2N3418 – 2N3421
TO-39 package
(sh o rt l ea ded)
2N3418S – 2N3421S
Important: For the latest inform ation, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3418U4 through 2N3421U4 series.
• RoHS compliant versions available (commercial grade only).
• Vce(sat) = 0.25 V @ Ic = 1 A
• Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA
• Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -100 mA
APPLICATIONS / BENEF ITS
• General purpose transis tors for medium power applicati ons requiring hi gh frequency switching and
low package profil e.
• Military and other high-reliability applications.
MAXIMUM RATI NGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3418U4
2N3420U4
2N3419U4
2N3421U4
Unit
Collector-Emitter Voltage VCEO 60 80 V
Collector-Base Voltage VCBO 85 125 V
Emitter-Base Voltage VEBO 8 V
Collector Current IC
3
5
A
Total Power Dissipation
@ T A = +25°C
(2)
PD 1
15
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > + 100 °C.
LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 2 of 6
2N3418U4 thru 2N3421U4
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body wi th gold over nickel pl ated kovar lid.
• TERMINALS: Gold over nickel plated surface mount terminations
• MARKING: Part number, Date Code, Manufacturer’s ID
• POLARITY: See package dimensions
• TAPE & REEL option: Standard per EIA-481D.
• WEIGHT: .125 grams (125 milligrams).
• See Package Dimensions on last page.
PART NOMENCL ATURE
JAN 2N3418 U4 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Package type
U4 = surf ace mount
SYMBOLS & DEFI NITIONS
Symbol
Definition
Cobo
common-base open-circ ui t output capacit ance
ICEO
col lector cut off cur r ent, base open
ICEX
col lector cut off cur r ent, circ ui t between base an d emitter
IEBO
emitter c utoff curr ent, collec tor open
hFE common-em i tter st atic forwar d current t r ansfer ratio
TA
ambient temperature, free-air temperature
VCEO collector-emitter volt age, bas e open
VCBO
collector-emitter voltage, emitter open
V
EBO
emitter-base voltage, coll ect or open
LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 3 of 6
2N3418U4 thru 2N3421U4
ELECTRICAL CHARACTERISTI CS
(TA = +25°C, unless otherwise noted)
OFF CHARACTE RISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Cur r ent
V(BR)CEO
V
I
C
= 50 mA, I
B
= 0
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
60
80
Collector-Emitter C utoff Current
ICEX
0.3
0.3 µA
V
BE
= -0.5 V, V
CE
= 80 V
VBE = -0.5 V, VCE = 120 V 2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
Collector-Base Cut off Curr ent
VCE = 45 V, IB = 0
VCE = 60 V, IB = 0
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4 ICEO
5.0
5.0 µA
Emitter-Bas e Cu toff Curr ent
VEB = 6.0 V, I C = 0
VEB = 8.0 V, I C = 0
IEBO
0.5
10 µA
ON CHARACTERISTICS (2)
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer R atio
hFE
I
C
= 100 mA, V
CE
= 2.0 V
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
20
40
I
C
= 1.0 A, V
CE
= 2.0 V
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
20
40
60
120
I
C
= 2.0 A, V
CE
= 2.0 V
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
15
30
I
C
= 5.0 A, V
CE
= 5.0 V
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
10
15
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 1.0 A, I
B
= 0.1 A
IC = 2.0 A, IB = 0.2 A
0.25
0.5
Base-Emitter Satu r ati on Voltage
IC = 1.0 A, IB = 0.1 A
IC = 2.0 A, IB = 0.2 A
VBE(sat)
0.6
0.7
1.2
1.4
V
DYNAMI C CHARACTERISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Cur r ent Tr ansfer Ratio |hfe| 1.3 0.8
IC = 0.1 A, VCE = 10 V, f = 20 MHz
O utput Capac it ance
Cobo 150 pF
VCB = 10 V, IE = 0, 10 0 kHz ≤ f ≤ 1.0 MHz
LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 4 of 6
2N3418U4 thru 2N3421U4
ELECTRICAL CHARACTERISTI CS
(TA = +25°C, unless otherwise noted) continued
SWIT CHING CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Delay Tim e
Rise Time
V
BE(off)
= -3.7 V,
I
C
= 1.0 A, I
B1
= 100 mA
t
d
t
r
0.08
0.22 µs
S torage Time
Fall Tim e
V
BE(off)
= -3.7 V,
I
C
= 1.0 A, I
B2
= -100 mA
t
s
t
f
1.10
0.20 µs
Turn-O ff Time
VBE(off) = -3.7 V, IC = 1.0 A, IB2 = -100 mA, RL = 20 Ω
toff 1.20 µs
SAFE OPER ATING AREA
DC Te st
TC = 100 °C, 1 cycle, t = 1.0 s
Test 1
VCE = 5.0 V, I C = 3.0 A
Test 2
VCE = 37 V, IC = 0.4 A
Test 3
VCE = 60 V, IC = 0. 18 5 A
VCE = 80 V, IC = 0. 12 A
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
Clamped Switching TA = 25°C, IB = 0.5 A, IC = 3.0 A
NOTES: (2) Pulse Test: Pul se Width = 300 µs, Du ty Cyc le ≤ 2.0%
LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 5 of 6
2N3418U4 thru 2N3421U4
GRAPHS
TC (oC) (Cas e)
FIGURE 1
Temperature-Power Der ating Curve
NOTES: Th ermal Resistance Junction to Case = 4.5 oC/W
Max F ini sh -Alloy Temp = 175 oC
TIME (s)
FIGURE 2
Maximum Ther mal Im pedance
NOTE: TC = +25 °C, Thermal Resistance Rθ JC = 4.5 °C/W
DC Operation Maximum Rating (W)
THETA (oC/W)
LDS-0192-2, Rev. 1 (111618) ©2011 Microsemi Corporation Page 6 of 6
2N3418U4 thru 2N3421U4
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
0.020
0.51
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
LL1 0.085 0.125 2.16 3.17
LL2 0.045 0.075 1.14 1.91
LS1 0.070 0.095 1.78 2.41
LS2
0.035
0.048
0.89
1.21
Q1
0.030
0.070
0.76
1.78
Q2
0.020
0.035
0.51
0.89
TERMINAL
1
COLLECTOR
2
BASE
3
EMITTER