TIC226 SERIES SILICON TRIACS 8 A RMS TO-220 PACKAGE (TOP VIEW) Glass Passivated Wafer 400 V to 800 V Off-State Voltage MT1 1 Max IGT of 50 mA (Quadrants 1 - 3) MT2 2 G 3 This series is currently available, but not recommended for new designs. Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC226D TIC226M Repetitive peak off-state voltage (see Note 1) TIC226S Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) TIC226N Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) Average gate power dissipation at (or below) 85C case temperature (see Note 4) Operating case temperature range Storage temperature range SYMBOL 400 600 VDRM 800 8 ITSM UNIT V 700 IT(RMS) A 70 A PGM 2.2 W TC -40 to +110 C TL 230 C IGM PG(AV) Tstg Lead temperature 1.6 mm from case for 10 seconds VALUE MDC2ACA 1 A 0.9 -40 to +125 W C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 320 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage TEST CONDITIONS VD = rated VDRM IG = 0 Vsupply = +12 V RL = 10 Vsupply = -12 V RL = 10 Vsupply = +12 V Vsupply = -12 V RL = 10 tp(g) > 20 s Vsupply = -12 V RL = 10 Vsupply = -12 V IT = 12 A tp(g) > 20 s tp(g) > 20 s RL = 10 tp(g) > 20 s tp(g) > 20 s RL = 10 tp(g) > 20 s RL = 10 tp(g) > 20 s IG = 50 mA TYP TC = 110C RL = 10 Vsupply = +12 V Vsupply = +12 V MIN tp(g) > 20 s (see Note 5) 6 -12 -10 25 0.7 -0.8 -0.8 0.9 1.5 MAX UNIT 2 mA 50 -50 -50 mA 2 -2 -2 2 2.1 V V All voltages are with respect to Main Terminal 1. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC226 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current Init' ITM = 100 mA 10 30 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -6 -30 Vsupply = +12 V off-state voltage dv/dt(c) MAX IG = 0 Critical rise of commutation voltage MIN VDRM = Rated VDRM IG = 0 VDRM = Rated VDRM ITRM = 12 A UNIT mA 50 (see Note 6) Vsupply = -12 V Critical rate of rise of dv/dt TYP Vsupply = +12 V mA -50 TC = 110C 100 TC = 85C V/s 5 V/s (see figure 7) All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.8 C/W 62.5 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC01AA Vsupply IGTM VAA = 12 V + + - RL = 10 tp(g) = 20 s + + 100 10 1 -60 -40 -20 0 20 40 60 80 100 120 TC01AB 10 VAA = 12 V Vsupply IGTM VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 1000 GATE TRIGGER VOLTAGE vs + + - + - - + RL = 10 tp(g) = 20 s } 1 0*1 -60 -40 -20 0 20 60 80 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. 2 40 100 120 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC226 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE 1000 VAA = 12 V Vsupply + - Vsupply IGTM IG = 0 Initiating ITM = 100 mA IL - Latching Current - mA IH - Holding Current - mA CASE TEMPERATURE TC01AD 1000 100 10 + + - + + -20 0 TC01AE VAA = 12 V 100 10 1 0*1 -60 -40 -20 0 20 40 60 80 100 1 -60 120 -40 TC - Case Temperature - C 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. Figure 4. THERMAL INFORMATION MAX AVERAGE POWER DISSIPATED vs MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE P(av) - Maximum Average Power Dissipated - W IT(RMS) - Maximum On-State Current - A RMS ON-STATE CURRENT TI01AB 10 9 8 7 6 5 4 3 2 1 0 32 TI01AC TJ = 110 C 28 Conduction Angle = 360 Above 8 A rms See ITSM Figure 24 20 16 12 8 4 0 0 25 50 75 100 125 0 2 4 6 8 10 12 TC - Case Temperature - C IT(RMS) - RMS On-State Current - A Figure 5. Figure 6. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 14 16 3 TIC226 SERIES SILICON TRIACS PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG See Note A R1 VMT2 10% dv/dt 63% IG IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. PMC2AA Figure 7. 4 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.