SEMICONDUCTOR BF423 TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES A High Voltage : VCEO>-300V Complementary to BF422. N E K G J D ) RATING UNIT Collector-Base Voltage VCBO -250 V Collector-Emitter Voltage VCEO -250 V Emitter-Base Voltage VEBO -5 V IC -50 ICP -100 Collector Power Dissipation PC 625 mW Base Current IB -50 mA Junction Temperature Tj 150 Tstg -65 150 DC Collector Current Peak Storage Temperature Range 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=-200V, IE=0 - - -10 nA VCB=-200V, IE=0, Tj=150 - - -10 A - - -50 nA ICBO Collector Cut-off Current F mA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC H F C SYMBOL MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC L MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE VCE=-20V, IC=-25mA 50 - - - VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V Base-Emitter Voltage VBE VCE=-20V, IC=-25mA - -0.75 - V Transition Frequency fT VCE=-10V, IC=-10mA 60 - - MHz Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - - 1.6 pF Collector-Emitter Saturation Voltage 1998. 10. 31 Revision No : 2 1/3 BF423 hFE - IC IC - VCE (LOW VOLTAGE REGION) 500 1.6 1.0 0.6 0.4 -40 0.3 -30 0.2 0.15 -20 0.1 I B =0.05mA -10 0 -4 -8 -12 -16 -20 -24 -10 30 -5 10 5 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT IC (mA) hFE - IC VCE(sat) - IC COMMON EMITTER V CE =-10V Ta=100 C 50 30 10 -1 -3 -10 -30 -100 -0.3 I C/I B =10 5 2 -0.1 -0.05 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT IC (mA) VCE(sat) - IC IC - VBE -1 -0.3 0 C Ta=10 25 -25 -0.1 -1 -3 -10 -30 COLLECTOR CURRENT IC (mA) Revision No : 2 -100 -100 -50 COMMON EMITTER VCE =10V -40 -30 -20 Ta=25 C COLLECTOR CURRENT IC (mA) COMMON EMITTER I C /IB =5 -0.5 -0.05 -0.3 -0.5 COLLECTOR CURRENT IC (mA) -5 -3 -1 Ta=-25 C 5 -0.3 COMMON EMITTER Ta=25 C -3 00 C 100 Ta=25 C Ta=-25 C -100 -5 Ta=1 DC CURRENT GAIN hFE 50 COLLECTOR-EMITTER VOLTAGE VCE (V) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 -28 500 1998. 10. 31 VCE =-20V 0 0 COMMON EMITTER Ta=25 C 300 DC CURRENT GAIN hFE 3.0 -50 COMMON EMITTER Ta=25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (mA) -60 -10 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 Cob, Cre - VCB 10 I E =0 f=1MHz Ta=25 C 8 6 4 C ob 2 C re 0 0 -40 -80 -120 -160 -200 -240 -280 TRANSITION FREQUENCY fT (MHz) fT - IC 500 COMMON EMITTER Ta=25 C 300 VCE =-20V 100 VCE =-10V 50 30 10 -0.3 -1 -3 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA) Pc - Ta SAFE OPERATING AREA 1000 600 400 200 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 200 I C MAX.(PULSED) * -100 1 10 0ms 0m s * * I C MAX.(CONTINUOUS) -50 -30 DC s 800 COLLECTOR CURRENT IC (mA) -200 1m COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre (pF) BF423 * OP ER AT IO N -10 -5 -3 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -1 -0.5 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) 1998. 10. 31 Revision No : 2 3/3