1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
2700 MHz to 3000 MHz.
[1] tp=300s; = 10 %; IDq =100mA
[2] tp= 3000 s; = 20 %; IDq =50mA
[3] tp=500s; = 20 %; IDq =50mA
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2700 MHz to 3000 MHz
BLS7G2730L-200P;
BLS7G2730LS-200P
LDMOS S-band radar power transistor
Rev. 4 — 1 September 2015 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase =25
C.
Test signal f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
Class-AB production test circuit
pulsed RF [1] 2.7 to 3.0 32 200 12 48 8 5
Application circuit
pulsed RF [2] 2.7 to 3.0 32 220 12.5 50 20 6
pulsed RF [3] 2.9 to 3.1 32 220 12.5 50 20 6
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Product data sheet Rev. 4 — 1 September 2015 2 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS7G2730L-200P (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLS7G2730LS-200P (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLS7G2730L-200P - flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLS7G2730LS-200P - earless flanged balanced ceramic package; 4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
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Product data sheet Rev. 4 — 1 September 2015 3 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
5. Thermal characteristics
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G2730L-200P and BLS7G2730LS-200P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under following conditions:
VDS = 32 V; IDq =100mA; P
L= 200 W; f = 2700 MHz; tp = 300 s; =10%
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-c) transient thermal impedance from junction
to case
Tcase =85C; PL= 200 W
tp= 300 s; = 10 % 0.13 K/W
tp= 3000 s; = 20 % 0.19 K/W
Table 6. DC characteristics
Tj=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID=1.2mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 120 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS = 0 V; VDS =28V - - 2.8 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
-22.5-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS = 10 V; ID=0.12A-1-S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=4.2A
-0.13-
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =32V; I
Dq =100mA;
Tcase =25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL= 200 W 9.8 12 - dB
RLin input return loss PL= 200 W - 10 6dB
Ddrain efficiency PL=200W4348- %
Pdroop(pulse) pulse droop power PL= 200 W - 0 0.25 dB
trrise time PL= 200 W - 8 50 ns
tffall time PL= 200 W - 5 50 ns
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Product data sheet Rev. 4 — 1 September 2015 4 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
7.3 Production test circuit
Table 8. Typical impedance
Measured load-pull data half device; VDS = 32 V; IDq = 100 mA.
f ZS [1] ZL [1]
(MHz) () ()
2700 2.0 j5.8 3.7 j6.4
2800 1.6 j5.9 3.8 j6.9
2900 2.6 j6.2 3.8 j6.9
3000 3.4 j6.0 3.7 j6.4
Fig 1. Definition of transistor impedance
001aaf059
drain
Z
L
Z
S
gate
Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm.
See Table 9 for a list of components.
Fig 2. Component layout for a class-AB production test circuit
C12
C10
C13
C16
C14
C17
C15
C9
C8
R1
C2
C1
C5 C6
C7
R2
C3
C4
C11
40 mm
60 mm
40 mm
aaa-007719
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Product data sheet Rev. 4 — 1 September 2015 5 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
7.4 Application circuit
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
Table 9. List of components test circuit
See Figure 2.
Component Description Value Remarks
C1, C3, C6, C9, C13, C15 multilayer ceramic chip capacitor 18 pF [1] ATC600F
C2, C5, C10, C16 multilayer ceramic chip capacitor 1 F[2]
C4, C7, C8, C14 multilayer ceramic chip capacitor 12 pF [1] ATC600F
C11, C17 multilayer ceramic chip capacitor 10 F[2]
C12 electrolytic capacitor 2200 F, 63 V
R1, R2 chip resistor 9.1 [3]
Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm.
See Table 10 for a list of components.
Fig 3. Component layout for a class-AB application circuit
Table 10. List of components application circuit
See Figure 2.
Component Description Value Remarks
C1, C3, C5, C6, C7, C8 multilayer ceramic chip capacitor 12 pF [1] ATC600F
C2, C4 multilayer ceramic chip capacitor 1 F[2]
C9, C10 electrolytic capacitor 2200 F, 50 V
R1, R2 chip resistor 50 [3]
aaa-007720
C3 C7
R1
C2
C4 C5
C1 R2 C6
C9
C10
C8
20 mm 20 mm
39 mm
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Product data sheet Rev. 4 — 1 September 2015 6 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
7.5 Graphical data
7.5.1 Test circuit
VDS = 32 V; IDq = 100 mA; tp= 300 s; =10%.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
VDS = 32 V; IDq = 100 mA; tp= 300 s; =10%.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 4. Output power as a function of input power;
typical values
Fig 5. Power gain as a function of output power;
typical values
aaa-007721
0 4 8 12 16 20
0
50
100
150
200
250
300
Pi (W)
PL
PL
(W)(W)(W)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
aaa-007722
0 50 100 150 200 250 300
7
9
11
13
15
17
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 7 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
VDS = 32 V; IDq = 100 mA; tp= 300 s; = 10 %.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
VDS = 32 V; PL= 200 W; IDq = 100 mA; tp= 300 s;
=10%.
Fig 6. Drain efficiency as a function of output power;
typical values
Fig 7. Power gain and drain efficiency as function of
frequency; typical values
VDS = 32 V; PL= 200 W; IDq = 100 mA; tp=300s; =10%.
Fig 8. Input return loss as a function of frequency; typical values
aaa-007723
0 50 100 150 200 250 300
0
10
20
30
40
50
60
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
aaa-007724
2650 2700 2750 2800 2850 2900 2950 3000 3050
10 20
12 30
14 40
16 50
18 60
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
aaa-007725
2650 2700 2750 2800 2850 2900 2950 3000 3050
0
4
8
12
16
f (MHz)
RL
RLinin
RLin
(dB)(dB)(dB)
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Product data sheet Rev. 4 — 1 September 2015 8 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
7.5.2 Application circuit
VDS = 32 V; IDq = 50 mA; tp= 3000 s; =20%.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
VDS = 32 V; IDq = 50 mA; tp= 3000 s; =20%.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 9. Output power as a function of input power;
typical values
Fig 10. Power gain as a function of output power;
typical values
aaa-007726
0 2 4 6 8 10 12 14 16
0
50
100
150
200
250
300
Pi (W)
PL
PL
(W)(W)(W)
(5)(5)(5)
(4)(4)(4)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-007727
0 50 100 150 200 250 300
7
9
11
13
15
17
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 9 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
VDS = 32 V; IDq = 50 mA; tp= 3000 s; =20%.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
VDS = 32 V; PL= 220 W; IDq = 50 mA; tp= 3000 s;
=20%.
Fig 11. Drain efficiency as a function of output power;
typical values
Fig 12. Power gain and drain efficiency as function of
frequency; typical values
VDS = 32 V; PL= 220 W; IDq = 50 mA; tp=3000s; =20%.
Fig 13. Input return loss as a function of frequency; typical values
aaa-007728
0 50 100 150 200 250 300
0
10
20
30
40
50
60
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
(5)(5)(5)
aaa-007729
2650 2700 2750 2800 2850 2900 2950 3000 3050
10 15
12 25
14 35
16 45
18 55
20 65
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
aaa-007730
2650 2700 2750 2800 2850 2900 2950 3000 3050
0
4
8
12
16
20
f (MHz)
RL
RLinin
RLin
(dB)(dB)(dB)
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Product data sheet Rev. 4 — 1 September 2015 10 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
8. Package outline
Fig 14. Package outline SOT539A
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Product data sheet Rev. 4 — 1 September 2015 11 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
Fig 15. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
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Product data sheet Rev. 4 — 1 September 2015 12 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal-Oxide Semiconductor
S-band Short wave band
VSWR Voltage Standing-Wave Ratio
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS7G2730S-200P_LS-200P#4 20150901 Product data sheet BLS7G2730S-200P_LS-200P v.3
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•Legal texts have been adapted to the new company name where appropriate.
BLS7G2730S-200P_LS-200P v.3 20130712 Product data sheet - BLS7G2730S-200P_LS-200P v.2
BLS7G2730S-200P_LS-200P v.2 20130603 Product data sheet - BLS7G2730S-200P_LS-200P v.1
BLS7G2730S-200P_LS-200P v.1 20130129 Objective data sheet - -
BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 13 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 14 of 15
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLS7G2730L(S)-200P
LDMOS S-band radar power transistor
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLS7G2730L-200P_LS-200P#4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Production test circuit . . . . . . . . . . . . . . . . . . . . 4
7.4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5.1 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5.2 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 12
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Mouser Electronics
Authorized Distributor
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NXP:
BLS7G2730LS-200PU BLS7G2730L-200PU