PAGE . 1May 21.2010-REV.01
2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
+20 V
Continuous Drain Current I
D
115 mA
Pulsed Drain Current
1)
I
DM
800 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
200
120 mW
Operating Junction and Storage
Temperature Range T
J
,T
STG
-55 to + 150
O
C
Juncti on-to Ambient Thermal
Re s i stance(P CB mounted )
2
R
θJA
625
O
C/W
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV
*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
SOT-323
Unit inch(mm)：
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
MECHANICAL DATA
• Case: SOT -323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
$SSUR[:HLJKWRXQFHVJUDPV
• Marking : K72
PAGE . 2May 21.2010-REV.01
2N7002KW
ELECTRICAL CHARACTERISTICS
V
DD
V
OUT
V
IN
R
G
R
L
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
GS
R
G
R
L
1mA
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown
Voltage BV
DSS
V
GS
=0V, I
D
=10uA 60 - - V
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
=250uA 1 - 2.5 V
Drain-Source On-State
Resistance R
DS(on)
V
GS
=4.5V, I
D
=200mA - - 4.0
Ω
Drain-Source On-State
Resistance R
DS(on)
V
GS
=1 0 V, I
D
=500mA - - 3.0
Zero Gate Voltage Drain
Current I
DSS
V
DS
=6 0V, V
GS
=0V - - 1 uA
Gate Bo dy Leakage I
GSS
V
GS
=+20V, V
DS
=0V - - +10 uA
Forward Transconductance g
fS
V
DS
=15V, I
D
=250mA 100 - - mS
Dynamic
Total Gate Charge Q
g
V
DS
=15V, I
D
=200mA
V
GS
=4.5V --0.8nC
Turn-On Delay Time t
on
V
DD
=3 0V , R
L
=150Ω
I
D
=2 00mA , V
GEN
=10V
R
G
=10Ω
--20
ns
Turn-Off Delay Time t
off
--40
Input Capacitance C
iss
V
DS
=25V, V
GS
=0V
f=1.0MH
Z
--35
pF
Output Capacitance C
oss
--10
Reverse Transfer
Capacitance C
rss
--5
Source-Drain Diode
Diode Forward Voltage V
SD
I
S
=200mA , V
GS
=0V - 0.82 1.3 V
Continuous Diode Forward
Current I
s
---115mA
Pulsed Diode Forward
Current I
sM
---800mA
PAGE . 3May 21.2010-REV.01
2N7002KW
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
V
DS
- Drain-to-Source Voltage (V)
ID- Drain-to-Source Current (A)
VGS= 6.0~10V
5.0V
4.0V
3.0V
V = 10V ~ 6.0V
GS
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Source Current (A)
V =10V
DS
V =10V
DS
V =10V
DS
T =25
J
℃
T =25
J
℃
T =25
J
℃
0
1
2
3
4
5
2345678910
VGS - Gate-to-Source Voltage (V)
ID=200m A
ID=500m A
R - On-Resistance ( )
DS(ON)
W
I =200mA
D
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
I
D
-DrainCurrent(A)
VGS =4.5V
VGS=10V
R - On-Resistance ( )
DS(ON)
W
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
RDS(ON) - On-Resistance(Normalized)
VGS =10V
ID=500mA
PAGE . 4May 21.2010-REV.01
2N7002KW
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Qg-GateCharge(nC)
V
GS
- Gate-to-Source Voltage (V)
V =10V
I =250mA
DS
D
ID = 250uA
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
th
- G-S Threshold Voltage (NORMALIZED)
I
D
=250mA
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
V =0V
GS
T =125
J
℃25℃
-55℃
PAGE . 5
May 21.2010-REV.01
MOUNTING PAD LAYOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
2N7002KW
SOT-323
0.026
(0.66)
0.073
(1.85)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：