Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"54 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","Transistor Application"...

{"C(iss) Max. (F)":"3000p","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"9.6","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"2.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-254AA","I(DSS) Min. (A)":"250u","Military":"N","t(r) Max. (s) Rise time":"65n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"75n","g(fs) Min. (S) Trans. conduct.":"8.0","I(D) Abs. Drain Current (A)":"13"}...