DSA300I100NA
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode Gen ²
2
3
1
4
Part number
DSA300I100NA
Backside: Isolated
FAV
F
VV0.88
RRM
300
100
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSA300I100NA
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.99
R0.15 K/
W
R
min.
300
V
RSM
V
3T = 25°C
VJ
T = °C
VJ
m
A
30V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
830
W
T = 25°C
C
RK/
W
300
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.30
T = 25°C
VJ
150
V
F0
V
0.53T = °C
VJ
150
r
F
1.09 m
Ω
V
0.88T = °C
VJ
I = A
F
V
300
1.21
I = A
F
600
I = A
F
600
threshold voltage
slope resistance for power loss calculation only
m
A
125
V
RRM
V
100
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
4.86
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
n
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
4.80 k
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSA300I100NA
preliminary
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
D
S
A
300
I
100
NA
Part number
Diode
Schottky Diode
low VF
Single Diode
SOT-227B (minibloc)
=
=
=
DSA300I200NA SOT-227B (minibloc) 200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Similar Part Package Voltage class
DSA300I45NA SOT-227B (minibloc) 45
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA300I100NA 509813Tube 10DSA300I100NAStandard
2500
3000
ISOL
threshold voltage V0.53
mΩ
V
0 max
R
0 max
slope resistance * 0.25
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSA300I100NA
preliminary
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSA300I100NA
preliminary
0.0 0.4 0.8 1.2
0
100
200
300
400
500
600
0 50 100 150 200 250
0
50
100
150
200
250
I
F
[A]
V
F
[V]
I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[ms]
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4a Power dissipation versus direct output current
Fig. 4b and ambient temperature
Fi
g
. 6 Transient thermal impedance
j
unction to case
T
VJ
=
25°C
125°C
150°C
0 40 80 120 160
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
04080120160
0
50
100
150
200
250
300
350
T
C
[°C]
Fig. 5 Average forward current
I
F(AV)
vs. case temp. T
C
I
F(AV)
[A]
T
amb
[°C]
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
R
thi
[K/W]
0.017
0.013
0.02
0.05
0.05
t
i
[s]
0.01
0.00001
0.01
0.045
0.3
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved