PD7M441L P2H7M441L MOSFET 50A 450 450500V PD7M441L/440L PD7M440L P2H7M440L P2H7M441L/440L 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage 1 Mounting Torque Symbol Grade PD7M441L/P2H7M441L PD7M440L/P2H7M440L Unit 450 500 V VGS=0V VGSS 20 V ID 50c=25 35c=25 A IDM 100c=25 A PD 350c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID1mA 2 3.1 4 V VGS20V, VDS0V 1 A rDS on VGS10V, ID25A 110 120 m gfg VDS15V, ID25A 45 S 9.0 nF 1.7 nF Crss 0.32 nF ton d 120 ns 80 ns 240 ns 50 ns IDSS VGSth IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID25A VGS-5V, 10V RG7 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS50A IS50A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 35 A 100 A 2 V 900 ns 25 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rth j-c - Thermal Resistance, Case to Heatsink Rth c-f Condition Maximum Value Min. Typ. Max. MOSFET 0.36 Diode 0.36 Mounting surface flat, smooth, and greased 0.1 320 http://store.iiic.cc/ Unit /W Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25i 250 s Pulse Test 80 VDS=50V 250 s Pulse Test 80 10V Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 40 VGS=5V 20 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 0 VGS=0V f=1kHz Ciss 9 Coss 6 Crss 3 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 0 2 4 6 GATE TO SOURCE VOLTAGE VGS (V) 4 25A 2 15A 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=35A ID=25A VDD=250V TC=25i 80 s Pulse Test 10 VDD= 100V 250V 400V 5 8 4 2 1 0.5 toff ton 0.2 0 80 160 240 320 400 TOTAL GATE CHRAGE Qg (nC) 0.1 480 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics RG=7 VDD=250V TC=25i 80 s Pulse Test ID=50A 6 0 8 12 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 20 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 15 0 125i Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 18 12 Tj=25i 40 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 60 SWITCHING TIME t ( s) 0 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 6V 60 TC=25i 250 s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) Fig. 9 Typical Reverse Recovery Characteristics 250 s Pulse Test 120 200 IS=50A IS=25A Tj=150i SOURCE CURRENT IS (A) 200 td(on) 100 tr tf 50 60 Tj=125i Tj=25i 40 20 20 1 2 5 10 20 50 100 200 IR 100 TC=25i Tj=150iMAX Single Pulse Operation in this area is limited by RDS (on) 100 10 s 50 100 s 20 1ms 10 5 2 0 0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 100 200 2 5 2 10 -1 Per Unit Base Rth(j-c)=0.36i/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10ms DC 0.5 2 0 10 0 1 1 1.2 Fig. 11 Normalized Transient Thermal impedance(MOSFET) 200 0.2 trr 500 50 Fig. 10 Maximum Safe Operating Area DRAIN CURRENT ID (A) 1000 80 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] SWITCHING TIME t (ns) 100 td(off) 10 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 2000 500 -441L -440L 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) - 305 http://store.iiic.cc/ 10 0 10 1 300 400 -dis/dt (A/ s) 500 600