MPSW06
NPN General Purpose Amplifier
MPSW06
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO E m i tter - Base Voltage 4 . 0 V
ICC ollector Current - Continuous 500 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33. See
MPSA06 for characteristics.
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Symbol Characteristic Max Units
MPSW06
PDTotal Device Dissipation
Derate above 25°C1.0
8.0 W
mW/°C
RθJC Thermal Resistance, Juncti on t o Cas e 125 °C/W
RθJA Thermal Resistance, Juncti on t o Ambient 50 °C/W
TO-226
CBE
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
MPSW06
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Un its
V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 m A , I B = 0 80 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 1 00 µA, I C = 0 4.0 V
ICEO Collector-Cutoff Current VCE = 6 0 V, IB = 0 0.1 µA
ICBO Collector-Cutoff Current VCB = 8 0 V, IE = 0 0.1 µA
ON CHARACTERISTICS
hFE DC Cu r rent G ain IC = 10 mA, VCE = 1.0 V
IC = 1 00 m A, V CE = 1.0 V 100
100
VCE(sat)Co ll ector-E mitter Sa turation Vo ltage IC = 1 00 m A, IB = 1 0 m A 0. 25 V
VBE(on)Base-Emitter On Voltage IC = 100 mA, V CE = 1.0 V 1.2 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
fTCurre nt Ga in - Ba ndwidth Product IC = 10 mA, VCE = 2.0 V,
f = 100 MH z 100 MHz
NPN General Purpose Amplifier
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