Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600 Volts
On-State RMS Current (
T
C
=
80
℃
) 180° Conduction Angles I
T(RMS)
4.0 Amp
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
℃
) I
TSM
25 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 2.6 A s
Forward Peak Gate Power P
GM
1 Watt
Forward Average Gate Power P
G(AV)
0.1 Watt
Operating Junction Temperature Range @ Rate V
DRM
and V
RRM
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
S4M02-600F
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
4 AMPERES RMS
600 VOLTS
SEMICONDUCTOR
LITE-ON
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev.1, Oct.-2010, KTXD06
TO-126
1 Cathode
2 Anode
3 Gate
PIN ASSIGNMENT