IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C,
VGS=-10V -120 A
TC=100°C,
VGS=-10V2) -114
Pulsed drain current2) ID,pulse TC=25°C -480
Avalanche energy, single pulse EAS ID=-60A 78 mJ
Avalanche current, single pulse IAS --120 A
Gate source voltage VGS -±163) V
Power dissipation Ptot TC=25 °C 136 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS -40
V
RDS(on) (SMD Version) 3.1 mW
ID-120 A
Product Summary
Type Package Marking
IPB120P04P4L-03 PG-TO263-3-2 4P04L03
IPI120P04P4L-03 PG-TO262-3-1 4P04L03
IPP120P04P4L-03 PG-TO220-3-1 4P04L03
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Rev. 1.0 page 1 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 1.1 K/W
Thermal resistance, junction -
ambient, leaded RthJA - - - 62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area4) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= -1mA -40 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=-340µA -1.2 -1.7 -2.2
Zero gate voltage drain current IDSS VDS=-32V, VGS=0V,
Tj=25°C - -0.05 -1 µA
VDS=-32V, VGS=0V,
Tj=125°C2) - -20 -200
Gate-source leakage current IGSS VGS=-16V, VDS=0V - - -100 nA
Drain-source on-state resistance RDS(on) VGS=-4.5V, ID=-100A - 4.0 5.2 mW
VGS=-4.5V,
ID=-100A,
SMD version - 3.7 4.9
VGS=-10V, ID=-100A - 2.9 3.4
VGS=-10V, ID=-100A,
SMD version - 2.6 3.1
Values
Rev. 1.0 page 2 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 11380 15000 pF
Output capacitance Coss - 3410 5000
Reverse transfer capacitance Crss - 135 270
Turn-on delay time td(on) - 21 - ns
Rise time tr- 16 -
Turn-off delay time td(off) - 85 -
Fall time tf- 57 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 40 52 nC
Gate to drain charge Qgd - 32 64
Gate charge total Qg- 180 234
Gate plateau voltage Vplateau - 3.5 - V
Reverse Diode
Diode continous forward current2) IS- - -120 A
Diode pulse current2) IS,pulse - - -480
Diode forward voltage VSD VGS=0V, IF=-100A,
Tj=25°C - -1 -1.3 V
Reverse recovery time2) trr - 54 ns
Reverse recovery charge2) Qrr - 60 nC
TC=25°C
Values
VGS=0V, VDS=-25V,
f=1MHz
VDD=-20V,
VGS=-10V, ID=-120A,
RG=3.5W
VDD=-32V,
ID=-120A,
VGS=0 to -10V
VR=-20V, IF=-50A,
diF/dt=-100A/µs
2) Defined by design. Not subject to production test.
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry -171A at 25°C.
3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C
Rev. 1.0 page 3 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≤ -6V ID= f(TC); VGS ≤ -6V; SMD
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0; SMD ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
-VDS [V]
-ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
120
140
0 50 100 150 200
TC[°C]
-ID[A]
Rev. 1.0 page 4 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C; SMD RDS(on) = (ID); Tj= 25 °C; SMD
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = -6V RDS(on) = f(Tj); ID= -100 A; VGS = -10 V; SMD
parameter: Tj
1.5
2.5
3.5
4.5
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
80
160
240
320
400
480
560
640
2345
-VGS [V]
-ID[A]
-3 V
-3.5 V
-4 V
-4.5 V
-5 V
-10 V
0
80
160
240
320
400
480
560
640
0123456
-VDS [V]
-ID[A]
-2.8 V -3 V -3.5 V
-4 V
-4.5 V
-5 V
2
4
6
8
10
12
14
16
18
20
0 40 80 120
-ID[A]
RDS(on) [mW]
-10V
Rev. 1.0 page 5 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Drain-source breakdown voltage
IF = f(VSD)VBR(DSS) = f(Tj); ID= -1 mA
parameter: Tj
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD [V]
-IF[A]
Ciss
Coss
Crss
105
104
103
102
101
0 5 10 15 20 25 30
-VDS [V]
C[pF]
-340µA
-3400µA
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj[°C]
-VGS(th) [V]
35
36
37
38
39
40
41
42
43
44
45
-60 -20 20 60 100 140 180
Tj[°C]
-VBR(DSS) [V]
Rev. 1.0 page 6 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
13 Typ. gate charge 14 Gate charge waveforms
VGS = f(Qgate); ID= -120 A pulsed
parameter: VDD
-8V
-32V
0
2
4
6
8
10
12
0 20 40 60 80 100 120 140 160
Qgate [nC]
-VGS [V]
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
Rev. 1.0 page 7 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2011-02-10
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Revision History
Version
0.1
1.0
Date
08.03.2010
24.01.2011
Changes
Initial Target Data Sheet
Final Data Sheet
Rev. 1.0 page 9 2011-02-10