UBD/UBT/UGT Series Uni-Imps(R) Features * Fast impulse breakdown ( 120% of typical DC breakdown to 200kV/s) * Tight DC breakdown voltage tolerance (+10%) * Non-radioactive * Low capacitance Applications * Antenna feedlines * Test equipment * Video displays * Medical electronics * Instrumentation circuits Standard Voltages Series UBD UBT and UGT DC Breakdown Voltage (Nom) 550 600 650 750 850 1.0 1.2 1.5 2.0 2.5 3.0 4.0 4.0 5.0 6.0 7.5 10.0 12.0 15.0 20.0 Unit V V V V V kV kV kV kV kV kV kV kV kV kV kV kV kV kV kV Description High Energy Devices' Uni-Imps high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from high-energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times combined with peak current ratings in the 5-10kA range. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on high-frequency lines and antenna feeds without excessive loading. Ordering Information A complete part number is represented by the digits below. Breakdown voltages are expressed in Volts for devices <1000V and kV for devices 1kV. For example, UBD550 is a 550V UBD series device, UBT7.5 is a 7.5kV UBT series device and UGT10.0 is a 10kV UGT series device. Product Series / Part Number Breakdown Voltage UBDXXX 550-950V UBDX.X 1.0-4.0kV UBTX.X UBTXX.X UGTX.X UGTXX.X 4.0-9.0kV 10.0-20.0kV 4.0-9.0kV 10.0-20.0kV All Uni-Imps are available with .360 O.D. endcaps. UBDs are available with a threaded male termination (#8-20) on one end while UGTs are also available with .250 O.D. endcaps. Devices in the UBD/UBT/UGT Series with other breakdown voltages in the .55-20kV range are available upon request. www.highenergydevices.com 1 of 5 UBD/UBT/UGT Series Specifications (@250C) Parameter Conditions UBD550 Nom Max Min UBD600 Nom Max Min UBD650 Nom Max Symbol Min Units 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 495 - 550 1010 - 605 660 20.0 540 - 600 1010 - 660 720 20.0 585 - 650 1010 - 715 780 20.0 V V pF 3kA (PW=15s) - 330 - - 420 - - 500 - - surges Symbol Min 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 675 - 750 1010 - 825 900 20.0 765 - 850 1010 - 935 1020 20.0 900 - 1000 1010 - 1100 1200 15.0 V V pF 3kA (PW=15s) - 660 - - 830 - - 1,080 - - surges Symbol Min 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 1.08 - 1.20 1010 - 1.32 1.44 15.0 1.35 - 1.50 1010 - 1.65 1.80 15.0 1.80 - 2.00 1010 - 2.20 2.40 10.0 kV kV pF 3kA (PW=15s) - 1,410 - - 1,900 - - 2,400 - - surges Symbol Min 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 2.25 - 2.50 1010 - 2.75 3.00 10.0 2.70 - 3.00 1010 - 3.30 3.60 5.0 3.60 - 4.00 1010 - 4.40 4.80 5.0 kV kV pF 3kA (PW=15s) - 2,400 - - 2,400 - - 2,400 - - surges Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance Life Ratings Surge Life Specifications (@250C) Parameter Conditions UBD750 Nom Max Min UBD850 Nom Max Min UBD1.0 Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance Life Ratings Surge Life Specifications (@250C) Parameter Conditions UBD1.2 Nom Max Min UBD1.5 Nom Max Min UBD2.0 Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance Life Ratings Surge Life Specifications (@250C) Parameter Conditions UBD2.5 Nom Max Min UBD3.0 Nom Max Min UBD4.0 Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance Life Ratings Surge Life www.highenergydevices.com 2 of 5 UBD/UBT/UGT Series Specifications (@250C) Parameter Conditions Symbol UBT4.0 UGT4.0 Min Nom Max UBT5.0 UGT5.0 Min Nom Max UBT6.0 UGT6.0 Min Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 3.60 - 4.00 1010 - 4.40 4.80 5.0 4.50 - 5.00 1010 - 5.50 6.00 3.0 5.40 - 6.00 1010 - 6.60 7.20 3.0 kV kV pF 10kA (PW=15s) - 1,300 - - 1,300 - - 1,300 - - surges Life Ratings Surge Life Specifications (@250C) Parameter Conditions Symbol UBT7.5 UGT7.5 Min Nom Max UBT10.0 UGT10.0 Min Nom Max UBT12.0 UGT12.0 Min Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 6.75 - 7.50 1010 - 8.25 9.00 2.0 9.00 - 10.00 1010 - 11.00 12.00 2.0 10.80 - 12.00 1010 - 13.20 14.40 2.0 kV kV pF 10kA (PW=15s) - 1,300 - - 1,300 - - 1,300 - - surges Life Ratings Surge Life Specifications (@250C) Parameter Conditions Symbol UBT15.0 UGT15.0 Min Nom Max UBT20.0 UGT20.0 Min Nom Max Units Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/s 100V 1MHz VBD Vbd IR C 13.5 - 15.0 1010 - 16.5 18.0 2.0 18.0 - 20.0 1010 - 22.0 24.0 2.0 kV kV pF 10kA (PW=15s) - 1,300 - - 1,300 - - surges Life Ratings Surge Life www.highenergydevices.com 3 of 5 UBD/UBT/UGT Series MECHANICAL DIMENSIONS mm/(inches) UBD Series UBT Series UGT Series www.highenergydevices.com 4 of 5 UBD/UBT/UGT Series Contact Contact Information: Information: High High Energy Energy Devices, Devices, LLC LLC 26 Hollenberg 45D Progress Court Parkway Bridgeton, MO 63044 Maryland Heights, MO 63043 Phone: 314.291.0030 Phone: 314.434.5191 Fax: 314.291.8184 Fax: 314.434.8184 E-mail: info@highenergydevices.com E-mail: info@highenergydevices.com www.highenergydevices.com www.highenergydevices.com HIGH THE ACCURACY ACCURACY HIGH ENERGY ENERGY DEVICES, DEVICES, LLC LLC MAKES MAKES NO NO REPRESENTATIONS REPRESENTATIONS OR OR WARRANTIES WARRANTIES WITH RESPECT WITH RESPECT TO TO THE OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO ANY TIME TIME WITHOUT WITHOUT NOTICE. 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HIGH ENERGY DEVICES, LLC RESERVES THE RIGHT TO DISCONTINUE OR MAKE C HANGES TO CHANGES TO ITS PRODUCTS ITS PRODUCTS AT AT ANY ANY TIME TIME WITHOUT WITHOUT NOTICE. NOTICE. Specification: UBD/UBT/UGT Series Specification: UBD/UBT/UGT Series (c)Copyright 2002, High Energy Devices, LLC (c)Copyright 2002, High Energy Devices, LLC All rights reserved. Printed in USA All rights reserved. Printed in USA. March 2008. November 2002 www.highenergydevices.com 5 of 5