SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING A B D C E FEATURES Complementary to KTD882. F G H MAXIMUM RATING (Ta=25 CHARACTERISTIC K SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -3 Pulse (Note) ICP -7 IB -0.6 Base Current (DC) Collector Power Ta=25 Dissipation Tc=25 1.5 PC Junction Temperature Storage Temperature Range Note : Pulse Width DIM A B C D E F G H J K L M N O P J ) 10 Tj 150 Tstg -55 150 L M O N 1 2 3 P A 1. EMITTER 2. COLLECTOR 3. BASE A W MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 10mS, Duty Cycle 50%. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 A Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 A VCE=-2V, IC=-20mA 30 220 - hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400 hFE(1) DC Current Gain * Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.3 -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A - -1.0 -2.0 V VCE=-5V, IC=-0.1A - 80 - MHz VCB=-10V, IE=0, f=1MHz - 55 - pF Current Gain Bandwidth Product fT Cob Collector Output Capacitance * Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed Note: hFE(2) Classification 2003. 7. 24 O:100 200 , Y:160 Revision No : 4 320 , GR:200 400 1/3 KTB772 h FE - I C -1.8 1K -1.6 500 300 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) I C - VCE IB =-10mA IB =-9mA IB =-8mA IB =-7mA IB =-6mA IB =-5mA -1.2 -1.0 IB =-4mA IB =-3mA -0.4 IB =-2mA IB =-1mA 0 0 -4 -8 -12 VCE =-2V 100 50 30 10 5 3 1 -16 -20 -1 -30 -100 -10K -5K -3K I C /I B =10 VBE (sat) -1K -500 -300 -100 -50 -30 VCE (sat) -10 -5 -3 -1K -3K 1K 500 300 I E =0 f=1MHz 100 50 30 10 5 3 1 -1 -3 -10 -30 -100 -300 -1K -3K -1 COLLECTOR CURRENT I C (A) S Revision No : 4 -10 S ER AT IO N C COLLECTOR CURRENT I C (A) -3 m OP 5 -0.1 -0.05 -0.03 10 DC =2 -1 I C MAX. (PULSED) I C MAX. (CONTINUOUS) -1 -0.5 -0.3 -0.01 -0.3 -1K 0 -10 -5 -3 Tc 10 5 3 -0.1 -300 10 VCE =-5V -0.03 -100 S 1m 1K 500 300 1 -0.01 -30 -10 SAFE OPERATING AREA f T - IC 100 50 30 -3 COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA) 2003. 7. 24 -300 C ob - VCB V CE(sat) ,V BE(sat) - I C CAPACITANCE Cob (pF) SATURATION VOLTAGE VCE(sat), V BE(sat) (mV) -10 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) -3 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTB772 dT - Ta Pc - Ta 16 POWER DISSIPATION PC (W) 160 DERATING dT(%), I C 140 120 100 DI 80 60 S/b SS IP AT 40 IO LIM N ITE LI M D IT ED 20 12 10 8 6 4 2 0 0 0 50 100 150 CASE TEMPERATURE Ta ( C) 2003. 7. 24 14 Revision No : 4 200 0 50 100 150 200 CASE TEMPERATURE Ta ( C) 3/3