1 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 6 0 0 V
VGES ± 20 V
IC25 TC = 25°C 31 A
IC80 TC = 80°C 21 A
ICM VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 40 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 600 V; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 10 0 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
VGE(th) IC = 0.5 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 50 ns
tr55 ns
td(off) 300 ns
tf30 ns
Eon 0.9 mJ
Eoff 0.7 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF
QGon VCE = 300 V; VGE = 15 V; IC = 20 A 65 nC
RthJC (per IGBT) 1.3 K /W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.5 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
IC25 = 31 A
VCES = 600 V
VCE(sat) typ. = 1.9 V
IGBT Module
Sixpack in ECO-PAC 2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
www.ixys.net
S 9
G 1
L 9
N 5
A 1
F 3
C 1
X 18
W 14
K 10
N 9
R 5
D 5
A 5
H 5
Pin arangement see outlines
2 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
Dimensions in mm (1 mm = 0.0394")
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 35 A
IF80 TC = 80°C 22 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 20 A; TVJ = 25°C 1.9 2.1 V
TVJ = 125°C 1.4 V
IRM IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
trr VR = 300 V; VGE = 0 V 90 ns
RthJC 2.3 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 K/W
Component
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
Mdmounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
3 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
IGBT
4 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
IGBT
ZthJH[K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t (s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50
µm thermal grease)
IGBT
5 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
200 600 10000 400 800
70
80
90
100
110
120
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C -diF/dt 0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
012
0
10
20
30
40
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
A/µs
µs
IF= 30A
IF= 15A
IF= 7.5A
TVJ= 100°C
VR = 300V TVJ= 100°C
IF = 15A
Peak reverse current IRM
versus -diF/dt
Reverse recovery charge Qr
versus -diF/dt
Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF= 30A
IF= 15A
IF= 7.5A
Qr
IRM
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr
versus diF/dt
IF= 30A
IF= 15A
IF= 7.5A tfr
VFR
TVJ=150°C
TVJ=100°C
TVJ= 25°C
15-06A
FRED
ZthJH [K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t(s)
D=0
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
(Z
thJH
is measured using 50
µm thermal grease)
Transient thermal resistance junction to heatsink
Diode
