Feb. 2009
P
UV W
GUPGVPGWP
GUNGVNGWN
EUNEVNEWN
N
EUPEVPEWP
RTC RTCRTC
RTC RTCRTC
GuN
EuN
GvN
EvN
GwN
EwN
GuP
EuP
GvP
EvP
GwP
EwP
E
GGG
GGGEE
EEE
UVW
P
N
CM
2.8
7.1
4
12 (4)
12
26 8.1
11 21.7 11 21.7 11
23
0.8
14.411 21.7 11 21.7 11
107
12
23
12 12
23
90
±0.25
80
±0.25
102
48.5 17 3.75
3.75
4–φ5.5
MOUNTING HOLES
5–M5NUTS
LABEL
29
0.5
+1
–0.5
Tc measured point
Tc measured point
CIRCUIT DIAGRAM
CM200TU-12F
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ............................................................600V
¡Insulated Type
¡6-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to heat sink, Thermal compound applied
*2
(1/6 module)
Case temperature measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
600
±20
200
400
200
400
590
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
V
V
W
°C
°C
Vrms
N • m
N • m
g
A
A
1
20
2.2
—
54
3.6
2.0
—
120
100
350
250
150
—
2.6
0.21
0.35
—
0.15*3
31
mA
µA
nF
nC
µC
V
K/W
Ω
—
—
1.6
1.6
—
—
—
1240
—
—
—
—
—
3.8
—
—
—
0.09
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6V
V
ns
57
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Test conditions
Tj = 25°C
Tj = 125°C
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0.5 1.5 2.5 3.51234
0
50
100
150
200
250
300
350
400
0
7.5
15
11
8
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
0 0.5 1 1.5 2 2.5 3 3.5 4
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
10–1 2100
357 2 101
357 2 102
357
2.5
3
2
1.5
1
0.5
0300 4000 100 200
5
4
3
2
1
016 18 20681012 14
100101
23 57 102
23 57 103
23 57
101
100
2
3
5
7
102
2
3
5
7
103
2
3
5
7
IC = 400A
IC = 200A
IC = 80A
Tj = 25°C
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Conditions:
td(off)
td(on)
tf
tr
9
Tj=25°C
VGE=20V 10
9.5
VGE = 15V
Tj = 25°C
Tj = 125°C
8.5
Tj = 25°C
Cies
Coes
Cres
VGE = 0V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
0
2
4
6
8
10
12
14
16
18
20
0 200 600 1400 18001000
Single Pulse
TC = 25°C
trr
Irr
IC = 200A
VCC = 200V
VCC = 300V
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25°C
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
IGBT part:
Per unit base = Rth(j–c) = 0.21K/W
FWDi part:
Per unit base = Rth(j–c) = 0.35K/W
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
