CIRCUIT TECHNOLOGY
www.aeroflex.com
eroflex Circuit Technology - Advanced Multichip Modules © SCD1664 REV C 5/10/00
General Description
The ACT–S512K8 is a high
speed, 4 Megabit CMOS
Monolithic SRAM designed for
full temperature range military,
space, or high reliability mass
memory and fast cache
applications.
The MCM is input and output
TTL compatible. Writing is
executed when the write
enable (WE) and chip enable
(CE) inputs are low and output
enable (OE) is high.Readingis
accomplished when WE is high
and CE and OE are both low.
Access time grades of 17ns,
20ns, 25ns, 35ns, 45ns and
55ns maximum are standard.
The +5 Volt power supply
version is standard and +3.3
Volt lower power model is a
future optional product.
The products are designed
for operation over the
temperature range of -55°C to
+125°C and under the full
military environment. A DESC
Standard Military Drawing
(SMD) number is released.
The ACT-S512K8 is
manufactured in Aeroflex’s
80,000 square foot
MIL-PRF-38534 certified
facility in Plainview, N.Y.
512Kx8
OE
A0 A18
I/O0-7
8
WE CE
Pin Description
I/O0-7 Data I/O
A0–18 Address Inputs
WE Write Enable
CE Chip Enable
OE Output Enable
VCC Power Supply
VSS Ground
NC Not Connected
Vss
Vcc
Block Diagram – Flat Package(F3,F16), DIP(P4) & CSOJ(F4)
Features
Low Power Monolithic CMOS 512K x 8 SRAM
Full Military (-55°C to +125°C) Temperature Range
Input and Output TTL Compatible Design
Fast 17,20,25,35,45 & 55ns Maximum Access Times
+5 V Power Supply
MIL-PRF-38534 Compliant MCMs Available
Industry Standard Pinouts
Packaging – Hermetic Ceramic
36 Lead, .92" x .51" x .13" Flat Package (FP), Aeroflex code# "F3"
36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ),
Aeroflex code# "F4"
(.155 MAX thickness available, contact factory for details)
32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4"
DESC SMD# 5962–95613 Released(F3,F4,P4)
ACT–S512K8 High Speed
4 Megabit Monolithic SRAM
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
2
Absolute Maximum Ratings
Symbol Parameter MINIMUM MAXIMUM Units
TCCase Operating Temp. -55 +125 °C
TSTG Storage Temperature -65 +150 °C
PDMaximum Package Power Dissipation -1.1 W
VGMaximum Signal Voltage to Ground -0.5 VCC + 0.5 V
VCC Power Supply Voltage -0.5 +7.0 V
TJJunction Temperature -+150 °C
Recommended Operating Conditions
Symbol Parameter Minimum Maximum Units
VCC Power Supply Voltage +4.5 +5.5 V
VIH Input High Voltage +2.2 VCC + 0.3 V
VIL Input Low Voltage -0.5 +0.8 V
TAOperating Temp. (Mil) -55 +125 °C
Truth Table
Mode CE OE WE Data I/O Power
Standby HX X High Z Standby (deselect/power down)
Read L L HData OUT Active
Output Disable LH H High Z Active (deselected)
Write LXLData IN Active
Capacitance
(VIN = 0V, f = 1MHz, Tc = 25°C, unless otherwise noted, Guaranteed but not tested)
Symbol Parameter Maximum Units
CIN Input Capacitance (A0-18, WE & OE)20 pF
COUT Output Capacitance (I/O0-7 & CE) 20 pF
DC Characteristics
(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C, unless otherwise specified)
Parameter Sym Conditions ALL SPEEDS
Min Max Units
Input Leakage Current ILI VCC = Max, VIN =0toVCC -10 +10 µA
Output Leakage Current ILO CE = VIH, OE = VIH, VOUT = 0toVCC -10 +10 µA
Operating Supply Current ICC CE = VIL, OE = VIH, Vcc=5.5V,
f=5MHz CMOS Compatible -170 mA
Standby Current ISB CE = Vcc, OE= VIH, Vcc=5.5V,
f=5MHz CMOS Compatible -20 mA
Output Low Voltage VOL IOL = 8 mA, Vcc = 4.5V -0.4 V
Output High Voltage VOH IOH = -4 mA, Vcc = 4.5V 2.4 -V
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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AC Characteristics
(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)
Read Cycle
Parameter Sym –017
Min Max –020
Min Max –025
Min Max –035
Min Max –045
Min Max –055
Min Max Units
Read Cycle Time tRC 17 -20 -25 -35 -45 -55 -ns
Address Access Time tAA -17 -20 -25 -35 -45 -55 ns
Chip Select Access Time tACS -17 -20 -25 -35 -45 -55 ns
Output Hold from Address Change tOH 0-0-0-0-0-0-ns
Output Enable to Output Valid tOE -9-10 -12 -25 25 25 ns
Chip Select to Output in Low Z (1) tCLZ 2-2-2-4-4-4-ns
Output Enable to Output in Low Z (1) tOLZ 0-0-0-0-0-0-ns
Chip Deselect to Output in High Z (1) tCHZ -9-10 -12 -15 -20 -20 ns
Output Disable to Output in High Z (1) tOHZ -9-10 -12 -15 -20 -20 ns
Note 1. Guaranteed by design, but not tested
Write Cycle
Parameter Sym –017
Min Max –020
Min Max –025
Min Max –035
Min Max –045
Min Max –055
Min Max Units
Write Cycle Time tWC 17 -20 -25 -35 -45 -55 -ns
Chip Select to End of Write tCW 15 -15 -20 -25 -35 -50 -ns
Address Valid to End of Write tAW 15 -15 -20 -25 -35 -50 -ns
Data Valid to End of Write tDW 12 -12 -15 -20 -25 -25 -ns
Write Pulse Width tWP 14 -14 -15 -25 -35 -40 -ns
Address Setup Time tAS 2-2-2-2-2-2-ns
Address Hold Time tAH 0-0-0-0-5-5-ns
Output Active from End of Write (1) tOW 0-0-0 0 5 -5-ns
Write to Output in High Z (1) tWHZ -9-9-10 -15 -20 -25 ns
Data Hold from Write Time tDH 0-0-0-0-0-0-ns
Note 1. Guaranteed by design, but not tested
Data Retention Electrical Characteristics (Special Order Only)
(Tc = -55°C to +125°C)
Parameter Sym Test Conditions ALL SPEEDS
Min Typ Max Units
VCC for Data Retention VDR CE VCC – 0.2V 2-5.5 V
Data Retention Current (1) ICCDR1 VCC = 3V -0.5 7.0 mA
Available in Low Power version. Call For Information.
Truth Table
Mode CE OE WE Data I/O Power
Standby HX X High Z Standby (deselect/power down)
Read L L HData Out Active
Output Disable LH H High Z Active (deselected)
Write LXLData In Active
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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Timing Diagrams
DI/O
tRC
tOH
tAA
Data ValidPrevious Data Valid
tOE
High Z
tOHZ
Read Cycle Timing Diagrams
Data Valid
tCLZ
CE
OE
tACStCHZ
UNDEFINED DON’T CARE
Read Cycle 2 (WE = VIH)
Write Cycle 2 (CE Controlled, OE = VIH )
DI/O
AC Test Circuit
IOL
Parameter Typical Units
Input Pulse Level 0 – 3.0 V
Input Rise and Fall 5ns
Input and Output Timing Reference Level 1.5 V
Notes:
1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance
ZO=75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
IOH
To Device Under Test VZ ~ 1.5 V (Bipolar Supply)
Current Source
Current Source
CL =
50 pF
tRC
tAA
tOLZ
SEE NOTE
SEE NOTE
SEE NOTE
SEE NOTE
Note: Guaranteed by design, but not tested.
Read Cycle 1 (CE = OE = VIL, WE = VIH)
tWP
tDW
Data Valid
tWC
tAWtAH
DI/O
tDH
CE
WE
tCW
tAS
A0-18
A0-18
A0-18
tCW
tAS tWP
tDW
tOW
CE
WE
Data Valid
tWC
tAWtAH
DI/O
tDH
tWHZ
SEE NOTE
A0-16
SEE NOTE
Write Cycle Timing Diagrams
Write Cycle 1 (WE Controlled, OE = VIL)
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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Pin Numbers & Functions
36 Pins — Flat Package
Pin # Function Pin # Function
1A019 NC
2A120 A10
3A221 A11
4A322 A12
5A423 A13
6CE 24 A14
7I/O025 I/O4
8I/O126 I/O5
9VCC 27 VCC
10 VSS 28 VSS
11 I/O229 I/O6
12 I/O330 I/O7
13 WE 31 OE
14 A532 A15
15 A633 A16
16 A734 A17
17 A835 A18
18 A936 NC
All dimensions in inches
Package Outline "F3" — Small Flat Package, 36 Leads
.850 REF
.930
Pin 1
.515
.017
MAX
±.002
.125 MAX
.005 ±.002
Pin 18
Pin 19
Pin 36
MAX
(17 spaces at .050)
2 sides
.350
MIN
.035±.003
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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Pin Numbers & Functions
36 Pins — CSOJ
1A019 NC
2A120 A10
3A221 A11
4A322 A12
5A423 A13
6CE 24 A14
7I/O025 I/O4
8I/O126 I/O5
9VCC 27 VCC
10 VSS 28 VSS
11 I/O229 I/O6
12 I/O330 I/O7
13 WE 31 OE
14 A532 A15
15 A633 A16
16 A734 A17
17 A835 A18
18 A936 NC
All dimensions in inches
Package Outline "F4" — .435" x .920" CSOJ, 36 Pins
.930
.050
Pin 1
MAX
.435
MAX
TYP TYP
.850
.376
±.01
*.184
MAX
0.008
±.002
.050 ±.01
*.155 MAX thickness available, contact factory for details
.017 ±..002
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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Pin Numbers & Functions
32 Pins — DIP
1A18 17 I/O3
2A16 18 I/O4
3A14 19 I/O5
4A12 20 I/O6
5A721 I/O7
6A622 CE
7A523 A10
8A424 OE
9A325 A11
10 A226 A9
11 A127 A8
12 A028 A13
13 I/O029 WE
14 I/O130 A17
15 I/O231 A15
16 VSS 32 VCC
Package Outline "P4" — .590" x 1.67" DIP Package, 32 Leads
All dimensions in inches
MAX
1.623
.100 .055 .020
.045 .016 .060
.040 .125
MIN
.165
MAX .604
MAX
.610
.590
.012
.009
TYP
Pin 1
Pin 32
TYP
TYP
Pin 1
Identifier
Aeroflex Circuit Technology SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
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Ordering Information
Model Number DESC Part Number Speed Package
ACT–S512K8N–017F3Q 5962–9561310HUC 17ns 36 Lead Flat
ACT–S512K8N–020F3Q 5962–9561309HUC 20ns 36 Lead Flat
ACT–S512K8N–025F3Q 5962–9561308HUC 25ns 36 Lead Flat
ACT–S512K8N–035F3Q 5962–9561307HUC 35ns 36 Lead Flat
ACT–S512K8N–045F3Q 5962–9561306HUC 45ns 36 Lead Flat
ACT–S512K8N–055F3Q 5962–9561305HUC 55ns 36 Lead Flat
ACT–S512K8N–017P4Q 5962–9561310HYC 17ns 32 Pin DIP
ACT–S512K8N–020P4Q 5962–9561309HYC 20ns 32 Pin DIP
ACT–S512K8N–025P4Q 5962–9561308HYC 25ns 32 Pin DIP
ACT–S512K8N–035P4Q 5962–9561307HYC 35ns 32 Pin DIP
ACT–S512K8N–045P4Q 5962–9561306HYC 45ns 32 Pin DIP
ACT–S512K8N–055P4Q 5962–9561305HYC 55ns 32 Pin DIP
ACT–S512K8N–017F4Q 5962–9561310HZC 17ns 36 Lead CSOJ
ACT–S512K8N–020F4Q 5962–9561309HZC 20ns 36 Lead CSOJ
ACT–S512K8N–025F4Q 5962–9561308HZC 25ns 36 Lead CSOJ
ACT–S512K8N–035F4Q 5962–9561307HZC 35ns 36 Lead CSOJ
ACT–S512K8N–045F4Q 5962–9561306HZC 45ns 36 Lead CSOJ
ACT–S512K8N–055F4Q 5962–9561305HZC 55ns 36 Lead CSOJ
* Pending
ACT– S512K 8N– 020 F4 Q
Aeroflex Circuit
Model Number Breakdown
Technology
Memory Type
S = SRAM
Memory Depth
Pinout Options
Memory Width, Bits
N = None
Memory Speed, ns
Package Type & Size
Surface Mount Packages Thru-Hole Packages
F3 = 36 Pin FP P4 = 32 Pin DIP
F4 = 36 Pin CSOJ
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screening *
Q = MIL-PRF-38534 Compliant/SMD if applicable
Screening
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11803
Telephone: (516) 694-6700
FAX: (516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
Specification subject to change without notice
CIRCUIT TECHNOLOGY
* Screened to the individual test methods of MIL-STD-883