NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2 & 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25C Steady State Symbol Value Unit VDSS 90 V VGS "20 V ID 41 A TC = 100C TC = 25C Steady State PD ID Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VGS = 10 V, IL(pk) = 24.5 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) D N-Channel G W 83 S 4 A 8.7 PD 3.8 1 2 IDM 206 A TJ, Tstg -55 to 175 C IS 40 A EAS 90 mJ TL 260 C 3 DPAK CASE 369C STYLE 2 W 1.9 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter 41 A 25 mW @ 4.5 V 6.1 TA = 100C TA = 25C, tp = 10 ms ID 20 mW @ 10 V 90 V 42 TA = 100C TA = 25C RDS(on) V(BR)DSS 29 TC = 100C TA = 25C www.onsemi.com Symbol Value Unit Junction-to-Case - Steady State (Drain) RqJC 1.8 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain AYWW 68 28LG * * * * * 2 1 Drain 3 Gate Source A = Assembly Location* Y = Year WW = Work Week 6828L = Device Code G = Pb-Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping NVD6828NLT4G DPAK (Pb-Free) 2500/Tape & Reel DPAK NVD6828NLT4G- (Pb-Free) VF01 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2013 May, 2017 - Rev. 2 1 Publication Order Number: NVD6828NL/D NVD6828NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 90 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 87 IDSS Gate-to-Source Leakage Current V VGS = 0 V, VDS = 90 V mV/C TJ = 25C 1.0 TJ = 125C 100 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = 250 mA mA "100 nA 2.5 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance 1.5 -6.5 RDS(on) mV/C VGS = 10 V, ID = 20 A 16.5 20 VGS = 4.5 V, ID = 20 A 19.1 25 mW CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Threshold Gate Charge QG(TOT) 175 VGS = 4.5 V, VDS = 72 V, ID = 20 A 32 VGS = 10 V, VDS = 72 V, ID = 20 A 61 QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD pF 2900 VGS = 0 V, f = 1.0 MHz, VDS = 25 V 126 nC 3.3 VGS = 10 V, VDS = 72 V, ID = 20 A 9.0 16 SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) ns 14 VGS = 10 V, VDD = 72 V, ID = 20 A, RG = 2.5 W tf 64 28 43 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.84 TJ = 125C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 35 VGS = 0 V, dIs/dt = 100 A/ms, IS = 20 A QRR www.onsemi.com 2 V ns 25 10 49 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. 1.2 nC NVD6828NL TYPICAL CHARACTERISTICS VDS 10 V 3.8 V TJ = 25C 60 3.6 V 40 3.4 V 3.2 V 20 3.0 V 2.8 V 0 1 2 3 4 20 TJ = 125C TJ = -55C 2.0 2.5 3.0 3.5 4.0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 20 A TJ = 25C 0.024 0.022 0.020 0.018 0.016 2 4 6 8 10 0.030 TJ = 25C 0.025 VGS = 4.5 V 0.020 VGS = 10 V 0.015 0.010 10 20 40 30 50 60 70 80 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100 k ID = 20 A VGS = 10 V 2.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (Normalized) TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (V) 0.026 2.8 40 VDS, DRAIN-TO-SOURCE (V) 0.028 0.014 60 0 5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 80 4.5 V VGS = 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 1.6 1.0 0.4 -50 -25 0 25 50 75 100 125 150 175 VGS = 0 V TJ = 150C 10 k TJ = 125C 1k 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 90 NVD6828NL TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25C Ciss 3000 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 4000 2000 1000 Coss 0 Crss 0 10 30 50 40 60 70 80 90 8 6 4 Qgs Qgd VDS = 72 V ID = 20 A TJ = 25C 2 0 0 10 20 30 40 50 60 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Charge 70 80 IS, SOURCE CURRENT (A) VDS = 72 V ID = 20 A VGS = 10 V 100 tr tf td(off) 10 QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) td(on) 1 10 VGS = 0 V TJ = 25C 60 40 20 0 0.50 100 0.60 0.70 0.80 0.90 1.00 1.10 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms ID, DRAIN CURRENT (A) t, TIME (ns) 1000 20 10 100 ms 10 1 ms 10 ms 1 VGS = 10 V Single Pulse TC = 25C 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NVD6828NL TYPICAL CHARACTERISTICS RqJC, R(t) (C/W) 10 1 0.1 Duty Cycle = 0.5 0.20 0.10 0.05 0.02 0.01 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 12. Thermal Response www.onsemi.com 5 0.1 1 10 NVD6828NL PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E b3 c2 4 L3 Z D 1 L4 C A B 2 NOTE 7 c SIDE VIEW b TOP VIEW H DETAIL A 3 b2 e 0.005 (0.13) M GAUGE PLANE C Z C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW H L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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