HGTG30N60C3D - Intersil Corporation

File Number 4041.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

HGTG30N60C3D

63A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25oC and 150oC. The

IGBT used is the development type TA49051. The diode

used in anti-parallel with the IGBT is the development type

TA49053.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where lo w conduction

losses are essential.

Formerly Developmental Type TA49014.

Symbol

Features

• 63A, 600V at TC = 25oC

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150oC

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60C3D TO-247 G30N60C3D

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet January 2000

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed HGTG30N60C3D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 63 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A

Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 25 A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 252 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125oC, RG= 25Ω.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V

Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA

VCE = BVCES TC = 150oC - - 3.0 mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,

VGE = 15V TC = 25oC - 1.5 1.8 V

TC = 150oC - 1.7 2.0 V

Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA,

VCE = VGE TC = 25oC 3.0 5.2 6.0 V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA

Switching SOA SSOA TJ = 150oC,

VGE = 15V,

RG = 3Ω,

L = 100µH

VCE(PK) = 480V 200 - - A

VCE(PK) = 600V 60 - - A

Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 8.1 - V

On-State Gate Charge QG(ON) IC = IC110,

VCE = 0.5 BVCES VGE = 15V - 162 180 nC

VGE = 20V - 216 250 nC

Current Turn-On Delay Time td(ON)I TJ = 150oC,

ICE = IC110,

VCE(PK) = 0.8 BVCES,

VGE = 15V,

RG= 3Ω,

L = 100µH

-40-ns

Current Rise Time trI -45-ns

Current Turn-Off Delay Time td(OFF)I - 320 400 ns

Current Fall Time tfI - 230 275 ns

Turn-On Energy EON - 1050 - µJ

Turn-Off Energy (Note 3) EOFF - 2500 - µJ

Diode Forward Voltage VEC IEC = 30A - 1.75 2.2 V

HGTG30N60C3D

Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns

IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns

Thermal Resistance RθJC IGBT - - 0.6 oC/W

Diode - - 1.3 oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include

diode losses.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Typical Performance Curves

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE, GATE TO EMITTER VOLTAGE (V)

TC = 25oC

TC = -40oC

TC = 150oC

4681012

100

125

150 PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VCE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC

00246810

10.0V

9.5V

9.0V

8.5V

100

125

150

7.0V

7.5V

8.0V

12.0V

VGE = 15.0V

ICE, COLLECTOR TO EMITTER CURRENT (A)

012345

100

125

150 PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 10V TC = -40oC

TC = 25oC

TC = 150oC

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

125

150

012345

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

100

PULSE DURATION = 250µs

DUTY CYCLE <0.5%

VGE = 15V TC = 150oC

TC = 25oC

TC = -40oC

HGTG30N60C3D

FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE

TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO

EMITTER CURRENT

Typical Performance Curves (Continued)

25 50 75 100 125 150

ICE, DC COLLECTOR CURRENT (A)

TC, CASE TEMPERATURE (oC)

VGE = 15V

ISC, PEAK SHORT CIRCUIT CURRENT (A)

100

250

300

350

450

tSC, SHORT CIRCUIT WITHSTAND TIME (µs)

10 11 12

VGE, GATE TO EMITTER VOLTAGE (V)

14 1513

500

400

200

150

ISC

tSC

25 VCE = 360V, RG= 25Ω, TJ = 125oC

td(ON)I, TURN-ON DELAY TIME (ns)

10 20 30 40

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

VGE = 15V

50 60

200 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

500

400

300

200

10010 20 30 40 50 60

TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 15V

VGE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

trI, TURN-ON RISE TIME (ns)

100

500

10 20 30 40 50 60

TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 15V

VGE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (ns)

10010 20 30 40 50 60

200

300

400

500 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 15V

VGE = 10V

HGTG30N60C3D

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS

Typical Performance Curves (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

010 20 30 40

EON, TURN-ON ENERGY LOSS (mJ)

VGE = 15V

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

50 60

TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (mJ)

10 20 30 40 50 60

1.0

2.0

3.0

4.0

5.0

6.0

TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

VGE = 10V or 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

fMAX, OPERATING FREQUENCY (kHz)

510203040

100

500 TJ = 150oC, TC = 75oC

RG = 3Ω, L = 100µH

fMAX2 = (PD - PC)/(EON + EOFF)

PD = ALLOWABLE DISSIPATION

PC = CONDUCTION DISSIPATION

fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)

(DUTY FACTOR = 50%)

RθJC = 0.6oC/W

VGE = 15V

VGE = 10V

160 VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

0 100 200 300 400 500 600

100

150

200

250

LIMITED BY

CIRCUIT

TJ = 150oC, VGE = 15V, L = 100µH

COES

CRES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0 5 10 15 20 25

1000

2000

3000

4000

5000

6000

7000

8000

C, CAPACITANCE (pF)

FREQUENCY = 400kHz

CIES

VGE, GATE TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC

240

120

360

480

600 15

VCE = 400V

VCE = 200V

VCE = 600V

0 40 80 120 160 200

HGTG30N60C3D

FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

Typical Performance Curves (Continued)

t1, RECTANGULAR PULSE DURATION (s)

10-5 10-3 100101

10-4

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PDX ZθJC X RθJC) + TC

10-1

10-2

SINGLE PULSE

100

ZθJC, NORMALIZED THERMAL RESPONSE

10-1

10-2

0.5

0.2

0.1

0.05

0.01

0.02

25oC

100oC

0.5 1.0 1.5 2.5 3.0

IEC, FORWARD CURRENT (A)

VEC, FORWARD VOLTAGE (V)

0 2.0

150oC

200 60

tr, RECOVERY TIMES (ns)

IEC, FORWARD CURRENT (A)

1 5 10 30

trr

TC = 25oC, dIEC/dt = 100A/µs

Test Circuit and Waveforms

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

RG = 3Ω

L = 100µH

VDD = 480V

RHRP3060

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF EON

HGTG30N60C3D

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptib le to gate-

insulation damage by the electrostatic discharge of energy

through the de vices . When handling these devices, care

should be exercised to assure that the static charge built in the

handler’s body capacitance is not discharged through the

de vice . With proper handling and application procedures,

however, IGBTs are currently being extensively used in

production by n umerous equipment man ufacturers in military,

industrial and consumer applications, with virtually no

damage problems due to electrostatic discharge . IGBTs can

be handled saf ely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage

rating of VGEM. Exceeding the rated VGE can result in

permanent damage to the oxide la yer in the gate region.

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that lea ve the gate

open-circuited or floating should be avoided. These

conditionscanresult inturn-onofthe devicedueto voltage

buildup on the input capacitor due to leakage currents or

pickup.

7. Gate Protection - These devices do not have an internal

monolithic zener diode from gate to emitter. If gate

protection is required an external zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 13)

is presented as a guide for estimating device performance

for a speciﬁc application. Other typical frequency vs collector

current (ICE) plots are possible using the information shown

for a typical unit in Figures 4, 7, 8, 11 and 12. The operating

frequency plot (Figure 13) of a typical device shows fMAX1 or

fMAX2 whichever is smaller at each point. The information is

based on measurements of a typical device and is bounded

by the maximum rated junction temperature.

fMAX1 is deﬁned by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other deﬁnitions

are possible. tD(OFF)I and tD(ON)I are deﬁned in Figure 21.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJM. tD(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allow ab le dissipation (PD) is defined by PD=(T

JM -T

C)/RθJC.

The sum of device switching and conduction losses must

not exceed PD. A 50% duty factor was used (Figure 13)

and the conduction losses (PC) are approximated by

PC=(V

CE xI

CE)/2.

EON and EOFF are deﬁned in the switching waveforms

shown in Figure 21. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the

integral of the instantaneous power loss during turn-off. All

tail losses are included in the calculation for EOFF; i.e. the

collector current equals zero (ICE = 0).

HGTG30N60C3D

ECCOSORBD is a Trademark of Emerson and Cumming, Inc.