Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. PINNING - TO220AB PIN IRFZ48N QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V PIN CONFIGURATION MAX. UNIT 55 64 140 175 16 V A W C m SYMBOL DESCRIPTION d tab 1 gate 2 drain 3 source tab g drain s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C - - 55 55 55 20 64 45 210 140 175 V V V A A A W C MIN. MAX. UNIT - 2 kV TYP. MAX. UNIT - 1.1 K/W 60 - K/W ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage, all pins Human body model (100 pF, 1.5 k) THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient - Rth j-a February 1999 in free air 1 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor IRFZ48N STATIC CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA; VGS(TO) Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; IGSS Gate source leakage current VGS = 10 V; VDS = 0 V V(BR)GSS Gate-source breakdown voltage Drain-source on-state resistance IG = 1 mA; RDS(ON) Tj = 175C Tj = 175C VGS = 10 V; ID = 25 A Tj = 175C MIN. TYP. MAX. UNIT 55 50 2 1 16 3.0 0.05 0.02 - 4.0 4.4 10 500 1 20 - V V V V V A A A A V - 12 - 16 30 m m MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 25 A 8 39 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 500 200 2900 600 270 pF pF pF Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 50 A; VDD = 44 V; VGS = 10 V - - 85 19 37 nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load - 18 35 45 30 26 85 60 45 ns ns ns ns Ld Internal drain inductance - 3.5 - nH Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH February 1999 2 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor IRFZ48N REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge MIN. TYP. MAX. UNIT - - 64 A IF = 25 A; VGS = 0 V IF = 65 A; VGS = 0 V - 0.95 1.0 210 1.2 - A V V IF = 65 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V - 57 0.14 - ns C MIN. TYP. MAX. UNIT - - 200 mJ AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 65 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tmb = 25 C 120 Normalised Power Derating PD% 120 110 110 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 20 40 60 80 100 Tmb / C 120 140 160 0 180 0 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) February 1999 Normalised Current Derating ID% 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V 3 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor IRFZ48N RDS(ON)/mOhm SOAX514 30 1000 VGS/V = ID / A tp = 1 us 10 us RDS(ON) = VDS/ID 100 7 8 9 10 15 1 ms DC 10 10 ms 100 ms 1 6.5 20 100 us 10 1 10 5 0 100 55 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 ID/A VDS / V Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp 1E+01 6 25 Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS 100 BUKX514-55 Zth / (K/W) ID/A 80 1E+00 0.5 1E-01 60 0.2 0.1 0.05 PD 0.02 tp D= tp T 40 t 20 1E-02 0 T 1E-03 1E-07 1E-05 1E-03 t/s 1E-01 0 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 100 8 7.5 16 10 ID/A VGS/V = Tj/C = 0 1 2 3 25 175 4 5 VGS/V 6 7 8 9 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 40 gfs/S 35 7 80 30 6.5 25 60 20 6 40 15 5.5 10 20 5 0 5 4.5 4 0 2 4 VDS/V 6 8 0 10 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS February 1999 0 20 40 ID/A 60 80 100 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V 4 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor 2.5 BUK959-60 a IRFZ48N 4 Rds(on) normlised to 25degC 3.5 3 Thousands (pF) 2 1.5 1 2.5 Ciss 2 1.5 1 5 0.5 -100 -50 0 50 Tmb / degC 100 150 0 0.01 200 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V 5 VGS(TO) / V 0.1 1 Coss Crss 100 10 VDS/V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 12 BUK759-60 VGS/V max. 10 VDS = 14V 4 typ. VDS = 44V 8 3 6 min. 2 4 1 2 0 -100 -50 0 50 Tj / C 100 150 200 0 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 10 20 30 QG/nC 40 50 60 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS 100 Sub-Threshold Conduction 1E-01 0 IF/A 80 1E-02 2% 1E-03 typ 60 98% Tj/C = 175 25 40 1E-04 20 1E-05 0 1E-06 0 1 2 3 4 5 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS February 1999 0 0.2 0.4 0.6 0.8 VSDS/V 1 1.2 1.4 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 5 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor 120 IRFZ48N WDSS% + 110 100 VDD RD 90 VDS 80 - 70 VGS 60 50 0 40 RG T.U.T. 30 20 10 0 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.17. Switching test circuit. Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A + VDD L VDS - VGS -ID/100 T.U.T. 0 RGS R 01 shunt Fig.16. Avalanche energy test circuit. WDSS = 0.5 LID2 BVDSS /(BVDSS - VDD ) February 1999 6 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor IRFZ48N MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1999 7 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor IRFZ48N DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 8 Rev 1.000