Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
’trench’ technology. The device IDDrain current (DC) 64 A
featuresverylow on-stateresistance Ptot Total power dissipation 140 W
and has integral zener diodes giving TjJunction temperature 175 ˚C
ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 16 mΩ
intended for use in switched mode resistance VGS = 10 V
power supplies and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ-55V
±VGS Gate-source voltage - - 20 V
IDDrain current (DC) Tmb = 25 ˚C - 64 A
IDDrain current (DC) Tmb = 100 ˚C - 45 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 210 A
Ptot Total power dissipation Tmb = 25 ˚C - 140 W
Tstg, TjStorage & operating temperature - - 55 175 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.1 K/W
mounting base
Rth j-a Thermal resistance junction to in free air 60 - K/W
ambient
d
g
s
123
tab
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3.0 4.0 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
±V(BR)GSS Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
RDS(ON) Drain-source on-state VGS = 10 V; ID = 25 A - 12 16 mΩ
resistance Tj = 175˚C - - 30 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 25 A 8 39 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2900 pF
Coss Output capacitance - 500 600 pF
Crss Feedback capacitance - 200 270 pF
Qg(tot) Total gate charge ID = 50 A; VDD = 44 V; VGS = 10 V - - 85 nC
Qgs Gate-source charge - - 19 nC
Qgd Gate-drain (Miller) charge - - 37 nC
td on Turn-on delay time VDD = 30 V; ID = 25 A; - 18 26 ns
trTurn-on rise time VGS = 10 V; RG = 10 Ω- 3585ns
td off Turn-off delay time Resistive load - 45 60 ns
tfTurn-off fall time - 30 45 ns
LdInternal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
LdInternal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
LsInternal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
February 1999 2 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - 64 A
current
IDRM Pulsed reverse drain current - - 210 A
VSD Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V
IF = 65 A; VGS = 0 V - 1.0 - V
trr Reverse recovery time IF = 65 A; -dIF/dt = 100 A/µs; - 57 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 30 V - 0.14 - µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
WDSS Drain-source non-repetitive ID = 65 A; VDD ≤ 25 V; - - 200 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID% Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
February 1999 3 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
VDS / V
ID / A
1 us
10 us
100 us
1 ms
10 ms
100 ms
tp =
1
10
100
1000
11055
RDS(ON) = VDS/ID
DC
SOAX514
100
0
5
10
15
20
25
30
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95100
RDS(ON)/mOhm
VGS/V = 6 6.5
7
8
10
9
ID/A
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
BUKX514-55
D =
t
p
t
p
T
T
P
t
D
0123
4
56789
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175 25
0246810
0
20
40
60
80
100 16
10 8
7.5 7
6.5
6
5.5
5
4.5
4
VGS/V =
ID/A
VDS/V
0 20406080100
0
5
10
15
20
25
30
35
40
gfs/S
ID/A
February 1999 4 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
-100 -50 0 50 100 150 200
0.5
1
1.5
2
2.5 BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0.01 0.1 1 10 100
0
5
1
1.5
2
2.5
3
3.5
4
Thousands (pF)
VDS/V
Ciss
Coss
Crss
BUK759-60
-100 -50 0 50 100 150 200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0 102030405060
0
2
4
6
8
10
12
VGS/V
VDS = 14V VDS = 44V
QG/nC
012345
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01 Sub-Threshold Conduction
typ
2% 98%
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C = 175 25
February 1999 5 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
Fig.16. Avalanche energy test circuit.
Fig.17. Switching test circuit.
20 40 60 80 100 120 140 160 180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
L
T.U.T.
VDD
RGS R 01
VDS
-ID/100
+
-
shunt
VGS
0
WDSS =0.5 ⋅LID
2⋅BVDSS/(BVDSS −VDD)
February 1999 6 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
February 1999 7 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999 8 Rev 1.000
